KR100822054B1 - The probe needle abrasive sheet for examination to semiconductor - Google Patents

The probe needle abrasive sheet for examination to semiconductor Download PDF

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Publication number
KR100822054B1
KR100822054B1 KR1020070119148A KR20070119148A KR100822054B1 KR 100822054 B1 KR100822054 B1 KR 100822054B1 KR 1020070119148 A KR1020070119148 A KR 1020070119148A KR 20070119148 A KR20070119148 A KR 20070119148A KR 100822054 B1 KR100822054 B1 KR 100822054B1
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probe
polishing sheet
weight
silicon
semiconductor
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KR1020070119148A
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Korean (ko)
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KR20070116770A (en
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윤경섭
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실리콘밸리(주)
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00—Single-purpose machines or devices for particular grinding operations not covered by any other main group
    • B24B19/16—Single-purpose machines or devices for particular grinding operations not covered by any other main group for grinding sharp-pointed workpieces, e.g. needles, pens, fish hooks, tweezers or record player styli
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G01R1/06733—Geometry aspects
    • G01R1/06738—Geometry aspects related to tip portion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

본 발명은 반도체 검사용 탐침의 연마시트에 관한 것으로, 반도체 웨이퍼의 칩 특성측정에 사용되는 탐침을 일정시간 사용 후, 연마하기 위한 연마시트에 관한 것으로, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료로 이루어진 실리콘 연마시트의 저면에 단면 실리콘 점착제가 부착된 폴리아미드 필름의 이면에 프라이머에 의해 접합 결합된 형태로 제작하여, 반도체 검사용 탐침을 실리콘 연마시트에 꽂았다가 빼는 작동만으로도 탐침의 끝단이 연마될 수 있도록 한 특징이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing sheet for a semiconductor inspection probe, and more particularly, to a polishing sheet for polishing a probe used for measuring chip characteristics of a semiconductor wafer after a certain time of use. The present invention relates to a vinyl terminal dimethylpolysiloxane, silicon carbide, platinum compound, An operation of inserting and removing a semiconductor inspection probe into and out of a silicon polishing sheet by fabricating the back side of a polyamide film having a single-sided silicone adhesive attached to the bottom of a silicon polishing sheet made of methylhydrogenpolysiloxane and a pigment by a primer. It has a feature that the tip of the probe can be polished by itself.

이에 본 발명은 상기와 같은 문제점을 해결하기 위해 발명된 것으로, 크게 다섯 개의 층으로 구성되는바, 최저부에는 얇은 필름의 형태로 이형필름(10)이 형성되고, 상기 이형필름(10)의 상부로는 저면에 실리콘 점착제(20a)가 형성된 폴리아미드필름(20)이 형성되며, 상기 폴리아미드필름(20)의 상면으로 10 내지 100㎛의 두께로 도포된 실리콘 접착제 프라이머층(30)이 형성되고, 상기 프라이머층(30)의 상면으로는 비닐말단디메틸폴리실록산 10 내지 40중량%와 탄화규소 50 내지 85중량%, 백금화합물 0.01 내지 5중량%, 메틸하이드로겐폴리실록산 0.01 내지 5중량% 및 안료 0.5 내지 5중량%가 혼합 구성된 실리콘 연마시트(40)가 형성되며, 최상부에는 얇은 필름 형태로 이형필름(50)이 순차적으로 적층된 원형시트 형태로 구성되어, 웨이퍼 스테이지 상에 부착되어 끝이 무뎌진 탐침(1)의 연마와 이물질을 신속 하게 제거시키는 대략적인 구성을 갖는다.Therefore, the present invention was invented to solve the above problems, and consists of five layers, the lower part of the release film 10 is formed in the form of a thin film, the upper portion of the release film 10 The furnace is formed with a polyamide film 20 having a silicone adhesive 20a formed on the bottom thereof, and a silicone adhesive primer layer 30 having a thickness of 10 to 100 μm is formed on the upper surface of the polyamide film 20. On the upper surface of the primer layer 30, vinyl terminal dimethylpolysiloxane 10 to 40% by weight, silicon carbide 50 to 85% by weight, platinum compound 0.01 to 5% by weight, methylhydrogenpolysiloxane 0.01 to 5% by weight and pigment 0.5 to A silicon polishing sheet 40 composed of 5% by weight is mixed, and the uppermost portion is formed of a circular sheet in which a release film 50 is sequentially stacked in a thin film form, and is attached to a wafer stage. Has the approximate configuration of quickly removing abrasive and foreign matter dyeojin probe (1).

상기와 같이 구성된 본 발명은, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료로 이루어진 실리콘 연마시트에 반도체 검사용 탐침을 꽂았다가 빼는 작동만으로도 탐침의 끝단이 뾰족하게 연마될 수 있도록 함과 동시에 탐침에 부착된 이물질을 제거될 수 있도록 한 효과가 있다.According to the present invention configured as described above, the tip of the probe can be sharply polished only by inserting and removing the semiconductor inspection probe into the silicon polishing sheet made of vinyl-terminal dimethylpolysiloxane, silicon carbide, platinum compound, methylhydrogenpolysiloxane and pigment. At the same time, it is effective to remove foreign substances attached to the probe.

이로 인해, 고가의 반도체 검사용 탐침의 수명을 연장시킬 수 있을 뿐만 아니라, 탐침의 교체시간도 줄일 수 있어서 검사비용 및 시간을 현저히 절약할 수 있는 또 다른 효과가 있다.As a result, not only the life of the expensive semiconductor inspection probe can be extended, but also the replacement time of the probe can be reduced, thereby further reducing the inspection cost and time.

반도체, 반도체 검사용 탐침, 연마시트, 반도체 웨이퍼, 탐침 Semiconductor, semiconductor inspection probe, polishing sheet, semiconductor wafer, probe

Description

반도체 검사용 탐침의 연마시트 {THE PROBE NEEDLE ABRASIVE SHEET FOR EXAMINATION TO SEMICONDUCTOR}Polishing Sheet for Semiconductor Inspection Probe {THE PROBE NEEDLE ABRASIVE SHEET FOR EXAMINATION TO SEMICONDUCTOR}

본 발명은 반도체 검사용 탐침의 연마시트에 관한 것으로, 더욱 상세하게 설명하면, 반도체 웨이퍼의 칩 특성측정에 사용되는 탐침을 일정시간 사용 후, 연마하기 위한 연마시트에 관한 것으로, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료로 이루어진 실리콘 시트의 저면에 단면 실리콘 점착제가 부착된 폴리아미드 필름의 이면에 프라이머에 의해 접합 결합한 형태로 제작되어, 반도체 검사용 탐침을 실리콘 연마시트에 꽂았다가 빼는 작동만으로도 탐침의 끝단이 연마될 수 있도록 한 반도체 검사용 탐침의 연마시트에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing sheet for a semiconductor inspection probe, and more particularly, to a polishing sheet for polishing a probe used for measuring chip characteristics of a semiconductor wafer after a certain time of use, including vinyl-terminated dimethylpolysiloxane, The semiconductor inspection probe is bonded to the silicon polishing sheet by a primer bonded to the back surface of the polyamide film having a single-sided silicone adhesive attached to the bottom of the silicon sheet made of silicon carbide, platinum compound, methylhydrogenpolysiloxane and pigment. The present invention relates to a polishing sheet of a semiconductor inspection probe which allows the tip of the probe to be polished by plugging in and unplugging.

일반적으로 웨이퍼를 구성하는 반도체 칩들의 불량 여부 검사를 위해 전기적인 특성을 이용하게 되는데, 이들 각 칩들과 접촉되면서 전기적 신호를 인가하여 불량 여부에 대한 판별의 기능을 수행하는 검사용 탐침이 구비된 검사장치를 사용 하게 된다.In general, the electrical characteristics are used to inspect the defects of the semiconductor chips constituting the wafer. An inspection probe having an inspection probe performing a function of determining whether the defect is defective by applying an electrical signal while being in contact with each of the chips. The device will be used.

반도체 칩의 특성검사 방법은 웨이퍼를 구성하는 반도체 칩들에 전기적 신호를 인가하고, 검사장치에 연결된 탐침의 선단부에 전류를 가하여, 탐침과 반도체 칩이 접촉되는 순간 체크 되는 전기적 신호에 의해 불량 여부를 판단하게 된다.In the characteristic test method of the semiconductor chip, an electrical signal is applied to the semiconductor chips constituting the wafer, and a current is applied to the tip of the probe connected to the inspection apparatus, and the defect is determined by the electrical signal checked at the moment of contact between the probe and the semiconductor chip. Done.

즉, 전기적 신호가 인가된 웨이퍼의 패드에 검사장치의 탐침이 접촉되게 함으로써, 이 탐침을 통해 일정한 전류를 흐르게 하여 그때의 전기적 특성을 측정하게 되는 것이다.That is, the probe of the inspection apparatus is brought into contact with the pad of the wafer to which the electrical signal is applied, and a constant current flows through the probe to measure the electrical characteristics at that time.

상기 사용되는 종래 탐침의 형태가 도 4에 도시되어 있는바 이를 대략적으로 살펴보면, 탐침(1)은 탐침로드(2)의 외주에 주석, 납 또는 무연솔더 등으로 구성된 솔더층(3)이 코팅되고 솔더층(3)의 외주에 절연수지층(4)이 코팅된 구성을 갖는다.The form of the conventional probe used is shown in FIG. 4, which is roughly described. The probe 1 is coated with a solder layer 3 composed of tin, lead, or a lead-free solder on the outer circumference of the probe rod 2. It has a configuration in which the insulating resin layer 4 is coated on the outer circumference of the solder layer 3.

상기와 같이 구성된 종래 반도체 검사용 탐침은 그 끝이 대단히 뾰족하게 가공되어 있어서, 수차례 반복적으로 검침을 할 경우에는 그 끝이 무뎌지게 되거나, 이물질이 붙게 되어 탐침과 반도체 칩이 접촉되는 순간 체크 되는 전기적 신호가 정확히 검출되지 않아 불량으로 판정되는 등의 문제점을 내포하고 있었다.The conventional semiconductor inspection probes configured as described above are processed with very sharp tips, so that the end of the probe may be blunted or repeatedly attached when the probe is contacted with the semiconductor chip. There was a problem that the electrical signal was not detected correctly and was determined to be defective.

그로 인해, 반도체 검사용 탐침을 수차례 사용 후에는 교체해 주어야 함으로써 고가의 탐침이 낭비되는 문제점이 있었으며, 탐침을 자주 교체해야 함에 따라 검사시간 손실이 과도하게 발생하는 또 다른 문제점을 내포하고 있었다.Therefore, there is a problem in that expensive probes are wasted by having to replace the semiconductor inspection probes several times after use, and another problem of excessive inspection time loss is caused by frequent replacement of the probes.

이에 본 발명은 상기와 같은 문제점을 해결하기 위해 발명된 것으로, 크게 다섯 개의 층으로 구성되는바, 최저부에는 얇은 필름의 형태로 이형필름(10)이 형성되고, 상기 이형필름(10)의 상부로는 저면에 실리콘 점착제(20a)가 형성된 폴리아미드필름(20)이 형성되며, 상기 폴리아미드필름(20)의 상면으로 10 내지 100㎛의 두께로 도포된 실리콘 접착제 프라이머층(30)이 형성되고, 상기 프라이머층(30)의 상면으로는 비닐말단디메틸폴리실록산 10 내지 40중량%와 탄화규소 50 내지 85중량%, 백금화합물 0.01 내지 5중량%, 메틸하이드로겐폴리실록산 0.01 내지 5중량% 및 안료 0.5 내지 5중량%가 혼합 구성된 실리콘 연마시트(40)가 형성되며, 최상부에는 얇은 필름 형태로 이형필름(50)이 순차적으로 적층된 원형시트 형태로 구성되 어, 웨이퍼 스테이지 상에 부착되어 끝이 무뎌진 탐침(1)의 연마와 이물질을 신속하게 제거시키는 대략적인 구성을 갖는다.Therefore, the present invention was invented to solve the above problems, and consists of five layers, the lower part of the release film 10 is formed in the form of a thin film, the upper portion of the release film 10 The furnace is formed with a polyamide film 20 having a silicone adhesive 20a formed on the bottom thereof, and a silicone adhesive primer layer 30 having a thickness of 10 to 100 μm is formed on the upper surface of the polyamide film 20. On the upper surface of the primer layer 30, vinyl terminal dimethylpolysiloxane 10 to 40% by weight, silicon carbide 50 to 85% by weight, platinum compound 0.01 to 5% by weight, methylhydrogenpolysiloxane 0.01 to 5% by weight and pigment 0.5 to A silicon polishing sheet 40 composed of 5% by weight is mixed, and the uppermost portion is formed of a circular sheet in which a release film 50 is sequentially stacked in a thin film form. Has the approximate configuration of quickly removing abrasive and foreign matter dyeojin probe (1).

상기와 같이 구성된 본 발명은, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료로 이루어진 실리콘 연마시트에 반도체 검사용 탐침을 꽂았다가 빼는 작동만으로도 탐침의 끝단이 뾰족하게 연마될 수 있도록 함과 동시에 탐침에 부착된 이물질을 제거될 수 있도록 한 효과가 있다.According to the present invention configured as described above, the tip of the probe can be sharply polished only by inserting and removing the semiconductor inspection probe into the silicon polishing sheet made of vinyl-terminal dimethylpolysiloxane, silicon carbide, platinum compound, methylhydrogenpolysiloxane and pigment. At the same time, it is effective to remove foreign substances attached to the probe.

이로 인해, 고가의 반도체 검사용 탐침의 수명을 연장시킬 수 있을 뿐만 아니라, 탐침의 교체시간도 줄일 수 있어서 검사비용 및 시간을 현저히 절약할 수 있는 또 다른 효과가 있다.As a result, not only the life of the expensive semiconductor inspection probe can be extended, but also the replacement time of the probe can be reduced, thereby further reducing the inspection cost and time.

본 발명은 반도체 검사용 탐침의 연마시트에 관한 것으로, 반도체 웨이퍼의 칩 특성측정에 사용되는 탐침을 일정시간 사용 후, 연마하기 위한 연마시트에 관한 것으로, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료로 이루어진 실리콘 연마시트의 저면에 폴리아미드 필름이 프라이머에 의해 접합 결합된 형태로 제작하여, 반도체 검사용 탐침을 실리콘 연마시트에 꽂았다가 빼는 작동만으로도 탐침의 끝단이 연마될 수 있도록 한 특징이 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing sheet for a semiconductor inspection probe, and more particularly, to a polishing sheet for polishing a probe used for measuring chip characteristics of a semiconductor wafer after a certain time of use. The present invention relates to a vinyl terminal dimethylpolysiloxane, silicon carbide, platinum compound, The polyamide film is bonded to the bottom surface of the silicon polishing sheet made of methylhydrogenpolysiloxane and pigment by bonding with a primer, and the tip of the probe can be polished by simply inserting and removing the semiconductor inspection probe into the silicon polishing sheet. There is one feature to make.

이하 본 발명의 실시 예를 도면을 통해 살펴보면 다음과 같다.Looking at the embodiment of the present invention through the drawings as follows.

우선, 도 1은 본 발명의 전체 사시도를 나타낸 것이고, 도 2는 본 발명의 단면도를 나타낸 것이고, 도 3a와 도 3b 및 도 3c는 본 발명의 사용상태 단면도를 나타낸 것으로, 도시한 바와 같이, 본 발명은 전체적인 형상이 원형시트 형태로 구성되되, 그 크기는 탐침(1)에 의해 검침될 반도체 웨이퍼의 크기와 동일한 크기로 제작되는바, 하부 이형필름(10)과 폴리아미드필름(20), 프라이머층(30), 실리콘 연마시트(40) 및 상부 이형필름(50)으로 구성된 총 다섯 층의 형태로 제작된다.First, Figure 1 shows the entire perspective view of the present invention, Figure 2 shows a cross-sectional view of the present invention, Figures 3a, 3b and 3c shows a cross-sectional view of the state of use of the present invention, as shown, The invention is formed in the form of a circular sheet of the overall shape, the size is made of the same size as the size of the semiconductor wafer to be probed by the probe (1), the lower release film 10 and polyamide film 20, primer It is produced in the form of a total of five layers consisting of the layer 30, the silicon polishing sheet 40 and the upper release film (50).

우선, 본 발명에 최하부와 최상부에 각각 부착되는 이형필름(10, 50)은 통상적으로 사용되는 얇은 불소필름 형태로 형성되는바, 후술하는 폴리아미드필름(20)의 저면과 실리콘 연마시트(40)의 상면에 각각 부착되어 각 시트의 표면을 보호하도록 하며, 실제 사용될 시에는 하부 이형필름(10)을 탈리시켜 폴리아미드필름(20)의 저부에 형성된 실리콘 점착제(20a)가 웨이퍼 스테이지(5) 상면에 부착되어 웨이퍼 스테이지(5)의 움직임에 따라 이동되도록 하고, 상부 이형필름(50)을 탈리시켜 실리콘 연마시트(40)에 탐치(1)이 꽂힐 수 있도록 하는 구성을 갖는다.First, the release films 10 and 50 attached to the lowermost and uppermost portions of the present invention are formed in the form of a thin fluorine film that is commonly used. The bottom surface of the polyamide film 20 to be described later and the silicon polishing sheet 40 are described below. It is attached to the upper surface of each to protect the surface of each sheet, and in actual use, the lower release film 10 is detached from the silicon adhesive 20a formed on the bottom of the polyamide film 20, the upper surface of the wafer stage 5 It is attached to the movement so as to move in accordance with the movement of the wafer stage 5, the upper release film 50 is detached to have a configuration such that the probe 1 can be inserted into the silicon polishing sheet 40.

또한, 상기 하부 이형필름(10)의 상부로는 얇은 시트의 형태로 제작된 폴리아미드필름(20)이 0.05 내지 0.1㎜의 두께로 형성되는바, 상기 폴리아미드필름(20)의 저면으로는 실리콘 점착제(20a)가 형성되어 있어서 웨이퍼 스테이지(5) 상에 부 착될 수 있도록 구성된다.In addition, the upper part of the lower release film 10 is formed of a polyamide film 20 in the form of a thin sheet to a thickness of 0.05 to 0.1mm bar, the bottom of the polyamide film 20 The pressure-sensitive adhesive 20a is formed to be attached to the wafer stage 5.

상기 폴리아미드필름(20)은, 이미 상업적으로 성공으로 성공을 거둔 (주)코오롱에서 제조 및 판매하는 AMIDROLL-NYLON FILM 제품을 사용하는 것이 바람직하며, 상기 제품과 같이 내열 및 내한성이 뛰어나고, 기계적 강도와 유연성을 가지도록 개발된 다른 제조자의 폴리아미드필름 제품을 구입하여 본 발명에 사용하는 것도 무방하다.The polyamide film 20, it is preferable to use the AMIDROLL-NYLON FILM products manufactured and sold by Kolon Co., Ltd., which has already been successful in commercial success, and excellent heat resistance and cold resistance, and mechanical strength as described above It is also possible to purchase and use a polyamide film product of another manufacturer developed to have flexibility with.

한편, 상기 폴리아미드필름(20)의 상면에 형성되는 프라이머층(30)을 살펴보면, 이미 상업적으로 성공으로 성공을 거둔 다미폴리캠(주)에서 제조 및 판매하는 SP-150 제품을 사용하는 것이 바람직하며, 상기 제품과 동일한 성분을 가지고 폴리아미드필름(20)의 상면에 후술하는 실리콘 연마시트(40)를 접착할 수 있도록 개발된 다른 제조자의 제품을 구입하여 본 발명에 사용하는 것도 무방하다.On the other hand, looking at the primer layer 30 formed on the upper surface of the polyamide film 20, it is preferable to use the SP-150 product manufactured and sold by Damipolycam Co., Ltd., which has already been successfully commercially successful. In addition, it is also possible to purchase a product of another manufacturer developed to adhere the silicon polishing sheet 40 to be described later on the upper surface of the polyamide film 20 with the same components as the above product and may be used in the present invention.

상기 프라이머층(30)은 상온에서 10 내지 100㎛ 이내의 범위로 폴리아미드필름(20)의 상면에 도포한 후, 그 상부에 후술하는 실리콘 연마시트(40)를 접착시키는 구성을 갖는다.The primer layer 30 is applied to the upper surface of the polyamide film 20 in the range of 10 to 100㎛ at room temperature, and then has a configuration to adhere the silicon polishing sheet 40 to be described later on the top.

마지막으로, 상기 프라이머층(30)의 상면에 형성되는 실리콘 연마시트(40)의 구성을 살펴보면, 그 전체 두께가 0.3 내지 0.4㎜ 정도로 구성되되, 실리콘 연마시트(40)의 조성을 살펴보면, 비닐말단디메틸폴리실록산, 10 내지 40중량%와 탄화규소 50 내지 85중량%, 백금화합물 0.01 내지 5중량%, 메틸하이드로겐폴리실록산 0.01 내지 5중량% 및 안료 0.5 내지 5중량%가 혼합 구성된 구성을 갖는다.Finally, looking at the configuration of the silicon polishing sheet 40 formed on the upper surface of the primer layer 30, the total thickness is composed of about 0.3 to 0.4mm, looking at the composition of the silicon polishing sheet 40, vinyl terminal dimethyl Polysiloxane, 10 to 40% by weight and 50 to 85% by weight of silicon carbide, 0.01 to 5% by weight of the platinum compound, 0.01 to 5% by weight of methylhydrogenpolysiloxane and 0.5 to 5% by weight of the pigment is configured.

상기 사용되는 비닐말단디메틸폴리실록산는 일반식 R1R2R3SiO1 /2로 나타내어지는 폴리디메틸실록산이며 R1은 알케닐기 R2,R3는 메틸 혹은 페닐기 이며 메틸하이드로겐폴리실록산은 R1R2R3SiO1 /2로 나타내어지는 폴리디메틸실록산이며 R1은 수소, R2,R3는 메틸 혹은 페닐기로 나타낸다.The use vinyl terminated dimethyl polrisilroksanneun is a polydimethylsiloxane of formula R 1 R 2 R 3 SiO 1 /2 R1 is an alkenyl group R2, R3 is methyl or phenyl methyl hydrogen polysiloxane is R 1 R 2 R 3 SiO a polydimethylsiloxane represented by 1/2 R1 is hydrogen, R2, R3 represents a methyl or phenyl group.

또한, 탐침(1)의 연마제로 사용되는 탄화규소는, 경도가 매우 높아 탐침(1)의 연마에 적합한 것으로, 그 입도는 1 내지 120㎛가 적당하며, 바람직하기로는 탐침(1)의 연마성능을 향상시키기 위해 입도가 작은 것에서부터 큰 것까지 혼합하여 사용하는 것이 바람직하다.In addition, silicon carbide used as an abrasive of the probe 1 has a very high hardness and is suitable for polishing the probe 1, and its particle size is suitably 1 to 120 µm, and preferably the polishing performance of the probe 1 is preferable. It is preferable to mix and use from a small particle size to a large thing in order to improve the.

상기와 같이 구성된 본 발명의 제조과정을 살펴보면, 우선, 저면에 실리콘 점착제(20a)가 형성된 폴리아미드필름(20)을 제작한 후, 그 저면에 하부 이형필름(10)을 부착한다.Looking at the manufacturing process of the present invention configured as described above, first, to produce a polyamide film 20 formed with a silicone adhesive (20a) on the bottom, and then attach the lower release film 10 to the bottom.

또한, 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료를 혼합하여 만든 실리콘 연마시트(40)를 별도로 제작한 후 마찬가지로 그 상면에 상부 이형필름(50)을 부착한다.In addition, after separately preparing a silicon polishing sheet 40 made by mixing vinyl-terminal dimethylpolysiloxane, silicon carbide, platinum compound, methylhydrogenpolysiloxane and pigment, the upper release film 50 is attached to the upper surface as well.

그런 다음, 상기 폴리아미드필름(20)의 상면으로 프라이머를 도포하여 프라이머층(30)을 형성시킨 후, 그 상면에 상기 실리콘 연마시트(40)의 저면을 일체로 접착한 후, 반도체 웨이퍼의 형태와 같은 원형으로 재단함으로써 본 발명의 제조를 완료한다.Then, after applying the primer to the upper surface of the polyamide film 20 to form a primer layer 30, and then adhere the bottom surface of the silicon polishing sheet 40 integrally to the upper surface, and then in the form of a semiconductor wafer Finishing the manufacture of the present invention by cutting into a circle such as.

상기 제조된 본 발명을 웨이퍼 스테이지(5)에 설치하는 설치과정을 살펴보면, 하부에 형성된 이형필름(10)을 제거한 다음, 웨이퍼 스테이지(5) 상에 실리콘 웨이퍼가 놓일 자리를 대신하여 폴리아미드필름(20)의 저부에 형성된 실리콘 점착제(20a)로 부착하며, 이후, 상부에 형성된 이형필름(50)을 제거함으로써 본 발명의 설치를 완료한다.Looking at the installation process for installing the present invention prepared on the wafer stage 5, after removing the release film 10 formed on the lower, instead of the place where the silicon wafer on the wafer stage 5 polyamide film ( 20 is attached to the bottom of the silicone adhesive (20a) formed, and then, the installation of the present invention is completed by removing the release film 50 formed on the top.

상기 설치된 본 발명의 사용상태를 살펴보면, 웨이퍼 스테이지(5) 상에 부착된 본 발명을 이송시켜 탐침(1)이 구비된 프로브 카드의 저면에 위치하도록 한 후, 프로브 카드를 하강시켜 탐침(1)이 실리콘 연마시트(40)에 꽂히도록 함으로써 탐침(1)에 부착된 이물질이 포집되도록 하며, 실리콘 연마시트(40)에 내재된 탄화규소에 의해 탐침(1)의 끝이 연마되도록 한 후, 탐침(1)이 구비된 프로브 카드를 상승시킴으로써 본 발명의 사용을 완료한다.Looking at the installed state of the present invention, the present invention attached on the wafer stage (5) is transported to be located on the bottom surface of the probe card with the probe (1), the probe card is lowered by the probe (1) The foreign matter attached to the probe 1 is collected by being inserted into the silicon abrasive sheet 40, and the tip of the probe 1 is polished by silicon carbide embedded in the silicon abrasive sheet 40, and then the probe The use of the present invention is completed by raising the probe card provided with (1).

도 1은 본 발명의 전체 사시도1 is an overall perspective view of the present invention

도 2는 본 발명의 단면도2 is a cross-sectional view of the present invention

도 3a, 도 3b, 도 3c는 본 발명의 사용상태 단면도Figure 3a, 3b, 3c is a cross-sectional view of the use state of the present invention

도 4는 종래 반도체 검사용 탐침의 사시도4 is a perspective view of a conventional semiconductor inspection probe

[도면의 주요부분에 대한 부호의 설명][Explanation of symbols on the main parts of the drawings]

1: 탐침 2: 탐침로드1: probe 2: probe rod

3: 솔더층 4: 절연수지층3: solder layer 4: insulating resin layer

5: 웨이퍼 스테이지 10, 50: 이형필름5: wafer stage 10, 50: release film

20: 폴리아미드필름 20a: 실리콘 점착제20: polyamide film 20a: silicone adhesive

30: 프라이머층 40: 실리콘 연마시트30: primer layer 40: silicon polishing sheet

Claims (2)

최저부에는 얇은 필름의 형태로 이형필름(10)이 형성되고,At the lowest portion, the release film 10 is formed in the form of a thin film. 상기 이형필름(10)의 상부로는 저면에 실리콘 점착제(20a)가 형성된 폴리아미드필름(20)이 형성되며,The upper portion of the release film 10 is a polyamide film 20 having a silicon adhesive (20a) is formed on the bottom, 상기 폴리아미드필름(20)의 상면으로 10 내지 100㎛의 두께로 도포된 실리콘 접착제 프라이머층(30)이 형성되고,On the upper surface of the polyamide film 20 is formed a silicone adhesive primer layer 30 having a thickness of 10 to 100㎛, 상기 프라이머층(30)의 상면으로는 비닐말단디메틸폴리실록산, 탄화규소, 백금화합물, 메틸하이드로겐폴리실록산 및 안료가 혼합 구성된 실리콘 연마시트(40)가 형성되며,The upper surface of the primer layer 30 is a silicon polishing sheet 40 formed of a mixture of vinyl terminal dimethylpolysiloxane, silicon carbide, platinum compound, methylhydrogenpolysiloxane and pigments is formed, 최상부에는 얇은 필름 형태로 이형필름(50)이 적층된 원형시트 형태로 구성됨을 특징으로 하는 반도체 검사용 탐침의 연마시트.The polishing sheet of the semiconductor inspection probe, characterized in that the top portion is composed of a circular sheet in which the release film 50 is laminated in a thin film form. 제 1항에 있어서,The method of claim 1, 실리콘 연마시트(40)는, 비닐말단디메틸폴리실록산 10 내지 40중량%와 탄화규소 50 내지 85중량%, 백금화합물 0.01 내지 5중량%, 메틸하이드로겐폴리실록산 0.01 내지 5중량% 및 안료 0.5 내지 5중량%가 혼합 구성되어, 0.3 내지 0.4㎜의 두께의 원형시트 형태로 구성됨을 특징으로 하는 반도체 검사용 탐침의 연마시트.The silicon abrasive sheet 40 includes 10 to 40% by weight of vinyl terminal dimethylpolysiloxane, 50 to 85% by weight of silicon carbide, 0.01 to 5% by weight of platinum compound, 0.01 to 5% by weight of methylhydrogenpolysiloxane, and 0.5 to 5% by weight of pigment. The mixed sheet is composed of 0.3 to 0.4 mm thick sheet of a semiconductor inspection probe, characterized in that the polishing sheet is configured in the form of a sheet.
KR1020070119148A 2007-11-21 2007-11-21 The probe needle abrasive sheet for examination to semiconductor KR100822054B1 (en)

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KR20010053451A (en) * 1998-07-10 2001-06-25 에이취. 캐롤 번스타인 Polishing Pads for a Semiconductor Substrate
JP2005052936A (en) 2003-08-05 2005-03-03 Toyo Ink Mfg Co Ltd Polishing pad laminated body and double-sided pressure sensitive adhesive sheet
JP2006187827A (en) 2005-01-05 2006-07-20 Toyo Tire & Rubber Co Ltd Polishing pad

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010053451A (en) * 1998-07-10 2001-06-25 에이취. 캐롤 번스타인 Polishing Pads for a Semiconductor Substrate
JP2005052936A (en) 2003-08-05 2005-03-03 Toyo Ink Mfg Co Ltd Polishing pad laminated body and double-sided pressure sensitive adhesive sheet
JP2006187827A (en) 2005-01-05 2006-07-20 Toyo Tire & Rubber Co Ltd Polishing pad

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