TWI811956B - Probe pin cleaning board - Google Patents
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- TWI811956B TWI811956B TW111101622A TW111101622A TWI811956B TW I811956 B TWI811956 B TW I811956B TW 111101622 A TW111101622 A TW 111101622A TW 111101622 A TW111101622 A TW 111101622A TW I811956 B TWI811956 B TW I811956B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 80
- 239000000523 sample Substances 0.000 title claims abstract description 68
- 229920005989 resin Polymers 0.000 claims abstract description 8
- 239000011347 resin Substances 0.000 claims abstract description 8
- 239000011152 fibreglass Substances 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 6
- 230000008018 melting Effects 0.000 claims abstract description 6
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 5
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 5
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 5
- 229920001296 polysiloxane Polymers 0.000 claims abstract description 4
- 239000007767 bonding agent Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 4
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 239000002131 composite material Substances 0.000 claims 1
- 239000000499 gel Substances 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000011230 binding agent Substances 0.000 abstract description 3
- 239000003365 glass fiber Substances 0.000 abstract description 2
- 230000005856 abnormality Effects 0.000 description 26
- 238000012360 testing method Methods 0.000 description 19
- 239000003292 glue Substances 0.000 description 18
- 230000006378 damage Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000084 colloidal system Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000037303 wrinkles Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000013100 final test Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000008262 pumice Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
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- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
本發明相關於一種探針清潔板,特別是相關於一種耐高溫處理的探針清潔板。The present invention relates to a probe cleaning plate, and in particular to a probe cleaning plate that is resistant to high temperature treatment.
半導體裝置的製程中,在將晶圓封裝後進行的產品測試稱為封裝後測試(Final Test),其中常會使用探針(probe pin)對半導體晶圓上的複數個晶片施加電性訊號,檢測晶圓的輸出訊號以確認半導體晶圓的功能是否正常。在測試中隨著探針與電極接觸,探針的尖端部分可能會附著電極的微粒等異物,造成檢測時產生雜訊而精度降低,甚至在附著大型異物時可能使相鄰的探針短路而造成晶圓被破壞。因此需要進行清潔步驟以除去探針上的異物。In the manufacturing process of semiconductor devices, the product testing performed after the wafer is packaged is called post-packaging test (Final Test). Probe pins are often used to apply electrical signals to multiple chips on the semiconductor wafer to detect The output signal of the wafer is used to confirm whether the function of the semiconductor wafer is normal. As the probe comes into contact with the electrode during the test, foreign matter such as particles from the electrode may be attached to the tip of the probe, causing noise during detection and reduced accuracy. Even when large foreign matter is attached, adjacent probes may be short-circuited. causing the wafer to be damaged. A cleaning step is therefore required to remove foreign matter from the probe.
清潔探針的方法,習知使用有使用於如矽酮或聚氨酯樹脂等彈性材料中混入例如氧化矽、碳化矽、氧化鋁或鑽石等磨石粒子的清潔用薄片,將探針尖端刺入清潔用薄片內部,使固定在彈性材料的磨石粒子研磨探針尖端以去除異物。或是使用於表面形成有微小凹凸的磨板之上形成有黏著性膠質層的清潔用薄片,使探針自膠質層表面刺入到內部並於磨板的凹凸表面移動以除去探針尖端的異物。A conventional method for cleaning a probe is to use a cleaning chip made of an elastic material such as silicone or polyurethane resin mixed with grinding stone particles such as silicon oxide, silicon carbide, aluminum oxide or diamond, and insert the tip of the probe into the cleaning sheet. Using the inside of the wafer, the pumice particles fixed on the elastic material grind the tip of the probe to remove foreign matter. Or use a cleaning sheet with an adhesive colloid layer formed on a grinding plate with minute unevenness on the surface, so that the probe penetrates into the interior from the surface of the colloid layer and moves on the uneven surface of the grinding plate to remove the tip of the probe. foreign body.
然而習知技術中所使用的清潔用薄片具有不耐高溫的問題,在晶圓的封裝後測試中亦有需要在高溫下進行測試的步驟,若是探針、晶圓或使用環境未經過適當冷卻,則有可能產生清潔用薄片黏接劑溢出乃至於變形或脫落,導致探針清潔不確實,甚至使探針損壞磨耗。However, the cleaning sheets used in the conventional technology are not resistant to high temperatures. During the post-packaging test of the wafer, there are also steps that require testing at high temperatures. If the probe, wafer or usage environment are not properly cooled, , the cleaning sheet adhesive may overflow and even deform or fall off, resulting in inaccurate probe cleaning and even damage and wear of the probe.
因此,本發明的目的即在提供一種探針清潔板,能夠承受反覆的加溫冷卻處理而不變形。Therefore, an object of the present invention is to provide a probe cleaning plate that can withstand repeated heating and cooling processes without deformation.
本發明為解決習知技術之問題所採用之技術手段係提供一種探針清潔板,由包含:一承板,該承板的組成材料係選自玻璃纖維樹脂板或單面覆銅玻璃纖維樹脂板;一結合劑層,設置於該承板的上表面且與該承板緊密貼合,該結合劑層包含一結合劑;以及一清潔層,設置於該結合劑層的上表面且與該結合劑層緊密貼合,該清潔層的組成材料包含矽膠、氧化鎂、碳化矽、氧化鋁及氧化鋯,其中該探針清潔板的融解溫度在200℃以上。The technical means adopted by the present invention to solve the problems of the prior art is to provide a probe cleaning plate, which includes: a supporting plate, the material of which is selected from a fiberglass resin board or a single-sided copper-clad glass fiber resin. board; a bonding agent layer, which is disposed on the upper surface of the supporting plate and closely adheres to the supporting plate; the bonding agent layer contains a bonding agent; and a cleaning layer, which is disposed on the upper surface of the bonding agent layer and is in close contact with the supporting plate. The bonding agent layer is closely adhered to each other. The cleaning layer is made of silicone, magnesium oxide, silicon carbide, aluminum oxide and zirconium oxide. The melting temperature of the probe cleaning plate is above 200°C.
在本發明的一實施例中係提供如前述的探針清潔板,其中該清潔層的邵氏硬度A為70至98。In one embodiment of the present invention, the probe cleaning plate as mentioned above is provided, wherein the Shore A hardness of the cleaning layer is 70 to 98.
在本發明的一實施例中係提供如前述的探針清潔板,其中該清潔層的厚度為0.2至0.5mm。In one embodiment of the present invention, the probe cleaning plate as mentioned above is provided, wherein the thickness of the cleaning layer is 0.2 to 0.5 mm.
在本發明的一實施例中係提供如前述的探針清潔板,其中該接合層的厚度為0.01至0.025mm。In an embodiment of the present invention, the probe cleaning plate as mentioned above is provided, wherein the thickness of the joint layer is 0.01 to 0.025 mm.
在本發明的一實施例中係提供如前述的探針清潔板,其中該承板的厚度為0.1至6mm。In one embodiment of the present invention, the probe cleaning plate as mentioned above is provided, wherein the thickness of the supporting plate is 0.1 to 6 mm.
經由本發明的探針清潔板所採用之技術手段,能夠提供一種晶圓測試用探針之探針清潔板,能夠承受反覆的加溫冷卻處理而不變形。Through the technical means used in the probe cleaning plate of the present invention, a probe cleaning plate for a wafer testing probe can be provided, which can withstand repeated heating and cooling processes without deformation.
以下根據第1圖至第5圖,而說明本發明的實施方式。該說明並非為限制本發明的實施方式,而為本發明之實施例的一種。The embodiments of the present invention will be described below based on FIGS. 1 to 5 . This description is not intended to limit the implementation of the present invention, but is one example of the present invention.
如第1圖及第2圖所示,依據本發明的實施例的探針清潔板100,包含承板1、結合劑層2及清潔層3。As shown in Figures 1 and 2, a probe cleaning plate 100 according to an embodiment of the present invention includes a supporting plate 1, a bonding agent layer 2 and a cleaning layer 3.
依據本發明的實施例的探針清潔板100,承板1的組成材料係選自玻璃纖維樹脂板或單面覆銅玻璃纖維樹脂板。According to the probe cleaning plate 100 of the embodiment of the present invention, the material of the supporting plate 1 is selected from a fiberglass resin board or a single-sided copper-clad fiberglass resin board.
依據本發明的實施例的探針清潔板100,結合劑層2包含結合劑,為設置於承板1的上表面且與承板1緊密貼合。According to the probe cleaning plate 100 of the embodiment of the present invention, the bonding agent layer 2 includes a bonding agent and is disposed on the upper surface of the supporting plate 1 and closely adheres to the supporting plate 1 .
依據本發明的實施例的探針清潔板100,清潔層3的組成材料包含矽膠、氧化鎂、碳化矽、氧化鋁及氧化鋯,為設置於結合劑層2的上表面且與結合劑層2緊密貼合,其中以氧化鎂作為除濕材料,而以氧化鋯作為主要探針清潔材料。According to the probe cleaning plate 100 of the embodiment of the present invention, the cleaning layer 3 is composed of silicone, magnesium oxide, silicon carbide, aluminum oxide and zirconium oxide, and is disposed on the upper surface of the bonding agent layer 2 and connected with the bonding agent layer 2 Tight fit, with magnesium oxide as the dehumidifying material and zirconium oxide as the primary probe cleaning material.
如第3圖所示,依據本發明的實施例的探針清潔板100,使清潔層3及結合劑層2的面積略小於承板1。As shown in FIG. 3 , according to the probe cleaning plate 100 according to the embodiment of the present invention, the areas of the cleaning layer 3 and the bonding agent layer 2 are slightly smaller than the supporting plate 1 .
如第4圖所示,依據本發明的實施例的探針清潔板100,其中,使清潔層3的邵氏硬度A為70至98,於本實施例中結合劑雖然使用傑地有限公司製的SA-257,但本發明並未限定於此,能夠應實際使用的需求自市售結合劑中選擇合適之物。As shown in Figure 4, according to the probe cleaning plate 100 according to the embodiment of the present invention, the Shore hardness A of the cleaning layer 3 is 70 to 98. In this embodiment, although the bonding agent is manufactured by Jiedi Co., Ltd. SA-257, but the present invention is not limited thereto, and a suitable one can be selected from commercially available binding agents according to actual needs.
如第5圖所示,依據本發明的實施例的探針清潔板100,清潔層3、接合層2及承板1的厚度分別形成為T3、T2及T1,其中清潔層3的厚度T3的範圍為0.2至0.5mm,接合層2的厚度T2的範圍為0.01至0.025mm,承板1的厚度T1的範圍為0.1至6mm。As shown in FIG. 5 , according to the probe cleaning plate 100 according to the embodiment of the present invention, the thicknesses of the cleaning layer 3 , the joint layer 2 and the supporting plate 1 are respectively formed as T3 , T2 and T1 , in which the thickness T3 of the cleaning layer 3 is The thickness T2 of the joint layer 2 ranges from 0.2 to 0.5mm, the thickness T2 of the joint layer 2 ranges from 0.01 to 0.025mm, and the thickness T1 of the bearing plate 1 ranges from 0.1 to 6mm.
[耐熱測試] 分別準備複數份依據本發明的實施例的探針清潔板100,日本製的市售探針清潔板以及用以顯示加熱後產生溢膠狀態的對照組,進行以不同溫度處理的耐熱測試。 [Heat resistance test] A plurality of probe cleaning plates 100 according to embodiments of the present invention, a commercially available probe cleaning plate made in Japan, and a control group used to show the state of glue overflow after heating were prepared, and heat resistance tests were performed at different temperatures.
耐熱測試包含以下步驟:The heat resistance test includes the following steps:
步驟1:將準備好的三組受測物同時送入經設定有指定測試溫度的加溫箱中;Step 1: Send the three prepared groups of test objects into the heating box set with the specified test temperature at the same time;
步驟2:對受測物加熱,待溫度達到指定的測試溫度時將受測物取出;Step 2: Heat the object under test, and take out the object under test when the temperature reaches the specified test temperature;
步驟3:於顯微鏡下觀察三組受測物是否有融化,溢膠及變形的狀況;Step 3: Observe the three groups of test objects under a microscope to see if there is any melting, glue overflow and deformation;
步驟4:準備新的三組受測物並指定新的測試溫度重複前述步驟1至3。Step 4: Prepare three new groups of tested objects and specify new test temperatures. Repeat the above steps 1 to 3.
將於步驟3中所觀察到的各組受測物之融化,溢膠及變形的狀況記錄而顯示於表1中,其中處理溫度200℃為破壞溫度,即目前業界已知的探針清潔板於此溫度下皆會產生變形乃至於融化等結構性破壞。The melting, glue overflow and deformation conditions of each group of tested objects observed in step 3 are recorded and shown in Table 1. The processing temperature of 200°C is the destruction temperature, which is the probe cleaning plate currently known in the industry. At this temperature, structural damage such as deformation or even melting will occur.
【表1】
如表1所示,將經過加熱處理的日本製的探針清潔板及依據本發明實施例的探針清潔板100與對照組以顯微鏡觀察並進行比較,若是有如對照組所表現的膠體明顯溢出的狀況則判斷為溢膠,同時觀察清潔板的各個表面是否受熱而產生融化或變形等狀態,若是觀察到變形則記載變形的狀況。As shown in Table 1, the heated probe cleaning plate made in Japan and the probe cleaning plate 100 according to the embodiment of the present invention are observed and compared with the control group under a microscope. If there is obvious overflow of colloid as shown in the control group, The situation is judged as glue overflow. At the same time, observe whether each surface of the cleaning plate is heated and melted or deformed. If deformation is observed, record the deformation situation.
由表1可以看出日本製的清潔板雖然在以35℃至190℃的溫度進行處理時皆沒有發生融化、溢膠及變形的狀況,但當處理溫度提高到200℃時,於清潔板的表面浮出有皺摺,此即表示該探針清潔板的內部結構已經受高溫破壞,無法維持平滑表面而可能在使用時造成清潔不確實,甚至探針破損,代表將該日本製的清潔板運用於需要200℃高溫處理的測試流程中時,若是在清潔中使清潔板的溫度過度上升至200℃即有可能造成清潔板變形,使清潔不確實乃至於探針破損,進一步影響後續的晶圓測試,而若是欲於需要200℃高溫處理的測試流程中使用,則於需要進行額外的降溫步驟,增加時間及設備成本。It can be seen from Table 1 that although the Japanese-made cleaning plates did not melt, overflow or deform when processed at temperatures from 35°C to 190°C, when the processing temperature was increased to 200°C, the cleaning plate's surface deteriorated. If there are wrinkles on the surface, it means that the internal structure of the probe cleaning plate has been damaged by high temperature and cannot maintain a smooth surface, which may cause inaccurate cleaning during use or even damage to the probe. This means that the cleaning plate made in Japan has been damaged. When used in test processes that require high-temperature treatment at 200°C, if the temperature of the cleaning plate is excessively raised to 200°C during cleaning, it may cause deformation of the cleaning plate, causing inaccurate cleaning and even damage to the probe, further affecting subsequent crystallization. If it is to be used in a test process that requires high temperature treatment at 200°C, additional cooling steps will be required, which will increase time and equipment costs.
與此相比,依據本發明實施例的探針清潔板100不僅於以35℃至190℃的溫度進行處理時皆沒有發生融化、溢膠及變形的狀況,即使將處理溫度提高到200℃時,亦沒有在顯微鏡下觀察到變形等異狀,也就是說,依據本發明實施例的探針清潔板100能夠承受200℃的高溫處理,即使在清潔中使依據本發明實施例的探針清潔板100的溫度上升至200℃,探針清潔板100依然不會受到影響產生溢膠或變形,而能夠正常清潔探針,因此,即使將依據本發明實施例的探針清潔板100應用於需要200℃高溫處理的測試流程中,亦不需要額外的降溫步驟而直接進行探針的清潔,相較於習知的探針清潔板能夠降低所需的時間及設備成本。In contrast, the probe cleaning plate 100 according to the embodiment of the present invention not only does not melt, overflow or deform when it is processed at a temperature of 35°C to 190°C, even when the processing temperature is increased to 200°C. , and no abnormality such as deformation was observed under a microscope. In other words, the probe cleaning plate 100 according to the embodiment of the present invention can withstand a high temperature treatment of 200°C, even if the probe according to the embodiment of the present invention is cleaned during cleaning. When the temperature of the plate 100 rises to 200°C, the probe cleaning plate 100 will still not be affected by glue overflow or deformation, and can clean the probe normally. Therefore, even if the probe cleaning plate 100 according to the embodiment of the present invention is used for needs In the test process of high temperature treatment at 200°C, the probe is directly cleaned without additional cooling steps. Compared with the conventional probe cleaning plate, the required time and equipment cost can be reduced.
以上之敘述以及說明僅為本發明之較佳實施例之說明,對於此項技術具有通常知識者當可依據以下所界定申請專利範圍以及上述之說明而作其他之修改,惟此些修改仍應是為本發明之發明精神而在本發明之權利範圍中。The above descriptions and explanations are only descriptions of the preferred embodiments of the present invention. Those with ordinary knowledge of this technology may make other modifications based on the patent scope defined below and the above explanations, but these modifications should still be made. It is for the spirit of the present invention and within the scope of rights of the present invention.
100 探針清潔板 1 承板 2 結合劑層 3 清潔層 100 Probe Cleaning Plate 1. Bearing plate 2. Binder layer 3. Clean layer
第1圖為顯示根據本發明的實施例的探針清潔板的立體圖。 第2圖為顯示根據本發明的實施例的探針清潔板的側視圖。 第3圖為顯示根據本發明的實施例的探針清潔板的俯視圖。 第4圖為顯示根據本發明的實施例的探針清潔板的剖面圖。 第5圖為顯示根據本發明的實施例的探針清潔板的剖面圖的部分放大圖。 Figure 1 is a perspective view showing a probe cleaning plate according to an embodiment of the present invention. Figure 2 is a side view showing a probe cleaning plate according to an embodiment of the present invention. Figure 3 is a top view showing a probe cleaning plate according to an embodiment of the present invention. Figure 4 is a cross-sectional view showing a probe cleaning plate according to an embodiment of the present invention. FIG. 5 is a partially enlarged view showing a cross-sectional view of a probe cleaning plate according to an embodiment of the present invention.
100 探針清潔板 1 承板 3 清潔層 100 Probe Cleaning Plate 1. Bearing plate 3. Clean layer
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TW111101622A TWI811956B (en) | 2022-01-14 | 2022-01-14 | Probe pin cleaning board |
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TW202327811A TW202327811A (en) | 2023-07-16 |
TWI811956B true TWI811956B (en) | 2023-08-11 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200511416A (en) * | 2003-03-20 | 2005-03-16 | Nitto Denko Corp | Cleaning sheet and its production method as well as transporting member having such cleaning sheet |
TW200819756A (en) * | 2006-09-15 | 2008-05-01 | Nippon Micro Coating Kk | Probe cleaner and cleaning method |
CN104889083B (en) * | 2009-12-03 | 2018-11-16 | 国际测试解决方案有限公司 | Cleaning device |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TW200511416A (en) * | 2003-03-20 | 2005-03-16 | Nitto Denko Corp | Cleaning sheet and its production method as well as transporting member having such cleaning sheet |
TW200819756A (en) * | 2006-09-15 | 2008-05-01 | Nippon Micro Coating Kk | Probe cleaner and cleaning method |
CN104889083B (en) * | 2009-12-03 | 2018-11-16 | 国际测试解决方案有限公司 | Cleaning device |
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