TWI760950B - Pallet applied to a thin film deposition device - Google Patents

Abstract

A pallet applied to a thin film deposition device, comprising: a first pallet body, a second pallet body and a connecting component. The first pallet body includes a plurality of through holes for carrying wafer, and a plurality of first slots arranged on a lower surface of the first pallet body. A size of the second pallet body corresponds to a size of the first pallet body. A plurality of second slots is arranged on an upper surface of the second pallet body. The shape and position of the second slots correspond to the shape and position of the first slots. The connecting component is located between the first slots and the second slots one by one, and used to provide the fixed connection between the first pallet body and the second pallet body. The first pallet body is implemented by a first material, and the second pallet body is implemented by a second material, The relative deviation between s thermal expansion coefficient of the first material and s thermal expansion coefficient of the film to be deposited is less than 20%; the volume resistivity of the first material is greater than that of the second material.

Description

Trays for thin film deposition equipment

The present invention relates to the field of semiconductors, in particular, to a tray applied to a thin film deposition device.

In the current semiconductor technology, aluminum nitride thin film deposition is widely performed on wafers to form piezoelectric layers or buffer layers. However, in the thin film deposition process, a single material (eg, silicon carbide SiC) tray is generally used to carry wafers made mainly of sapphire (Al ₂ O ₃ ). Due to the different thermal expansion coefficients between materials, there will be a certain stress in the aluminum nitride film during the high temperature growth process, and this stress is more obvious in the high temperature epitaxial furnace, which amplifies the stress effect during the forming process of the aluminum nitride film. This leads to the difference in epitaxial uniformity, which affects the quality of the aluminum nitride film; in addition, silicon carbide has changed from an insulator to a non-insulator at high temperature (such as 500 degrees Celsius), so during the deposition process of the aluminum nitride film, the electric field and the The dual effects of the magnetic field lead to a decrease in the energy of the ionized ions (atoms) reaching the wafer, resulting in poorer crystalline quality of the aluminum nitride film deposited on the wafer.

One of the objectives of the present invention is to provide a tray applied to a thin film deposition apparatus to solve the problems in the background art. For example, reducing the stress of the aluminum nitride film during film deposition and reducing the influence of electric field changes after the tray is transformed into a non-insulator, thereby improving the quality of the aluminum nitride film.

According to an embodiment of the present invention, a tray used in a thin film deposition device is disclosed. The tray includes: a first tray body, a second tray body and a connecting assembly. The first tray body includes a plurality of through holes for carrying wafers, and a lower surface of the first tray body is provided with a plurality of first slots. The size of the second disk body corresponds to the size of the first disk body, and a plurality of second grooves are disposed on an upper surface of the second disk body, wherein the shapes and positions of the plurality of second grooves Corresponding to the shapes and positions of the plurality of first slots. The connecting assembly is located between the first slot and the second slot in one-to-one correspondence, and is used to realize the fixed connection of the first disc body and the second disc body. The first disk is made of a first material, the second disk is made of a second material, and the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film to be deposited is less than 20%, so as to reduce the impact on The stress when depositing the thin film on the wafer is affected; the volume resistivity of the first material is greater than the volume resistivity of the second material, so that the first disk body forms an edge when the thin film is deposited on the wafer.

According to an embodiment of the present invention, the thermal conductivity of the second material is greater than the thermal conductivity of the first material.

According to an embodiment of the present invention, a chamfered structure is disposed on the upper surface of the first disk body adjacent to the through hole.

According to an embodiment of the present invention, the included angle between the chamfered structure and the upper surface of the first disk body ranges from 30 degrees to 60 degrees, and the length of the right-angled side of the chamfered structure ranges from 0.3 mm to 2 mm. .

According to an embodiment of the present invention, the angle between the chamfered structure and the upper surface of the first disk body is 45 degrees, and the length of the right-angled side of the chamfered structure is 0.5 mm.

According to an embodiment of the present invention, the height of the first disk body ranges from 2 mm to 4 mm.

According to an embodiment of the present invention, the through hole has an upper portion and a lower portion, and the diameter of the upper portion is larger than the diameter of the lower portion.

According to an embodiment of the present invention, the diameter of the upper portion ranges from 100.5 mm to 102 mm, and the depth of the upper portion ranges from 1 mm to 3 mm.

According to an embodiment of the present invention, the diameter of the lower portion ranges from 80 mm to 98 mm, and the depth of the lower portion ranges from 1 mm to 3 mm.

According to an embodiment of the present invention, the height of the connecting element ranges from 2 mm to 3 mm.

According to an embodiment of the present invention, the first material is aluminum nitride, and the second material is silicon carbide.

The tray proposed by the present invention adopts a composite structure, which improves the process stability of the deposition of the aluminum nitride film on the wafer. In addition, the influence of electric and magnetic field changes on the formation of the aluminum nitride film is reduced, thereby improving the crystal quality of the aluminum nitride film.

The following disclosure provides many different embodiments or examples of different components for implementing the present disclosure. Specific examples of components and configurations are described below to simplify the present disclosure. Of course, these are only examples and are not intended to be limiting. For example, in the following description a first member is formed over or on a second member may include embodiments in which the first member and the second member are formed in direct contact, and may also include additional members An embodiment may be formed between the first member and the second member so that the first member and the second member may not be in direct contact. Additionally, the present disclosure may repeat reference numerals and/or letters in various instances. This repetition is for the purpose of simplicity and clarity and does not in itself indicate a relationship between the various embodiments and/or configurations discussed.

Furthermore, for ease of description, spatially relative terms such as "below," "below," "under," "above," "over," and the like may be used herein to describe one element or component and another(s) The relationship of elements or components, as illustrated in the figure. Spatially relative terms are intended to encompass different orientations of the device in use or operation other than the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and thus the spatially relative descriptors used herein may likewise be interpreted.

Notwithstanding that the numerical ranges and parameters setting forth the broad scope of the disclosure are approximations, the numerical values set forth in the specific examples are reported as precisely as possible. Any numerical value, however, inherently contain certain errors necessarily resulting from the standard deviation found in their respective testing measurements. Also, as used herein, the term "about" generally means within 10%, 5%, 1%, or 0.5% of a given value or range. Alternatively, the term "about" means within an acceptable standard error of the mean when considered by one of ordinary skill in the art. Except in operating/working examples, or unless expressly specified otherwise, such as for amounts of materials disclosed herein, durations of time, temperatures, operating conditions, ratios of amounts, and the like, all numerical ranges, Amounts, values and percentages should be understood to be modified by the term "about" in all instances. Accordingly, unless indicated to the contrary, the numerical parameters set forth in the present disclosure and the accompanying claims are approximations that may vary as desired. At the very least, each numerical parameter should be interpreted by applying ordinary rounding techniques at least in view of the number of reported significant digits. A range may be expressed herein as from one endpoint to the other or between the two endpoints. All ranges disclosed herein include endpoints unless otherwise specified.

In the prior art semiconductor technology, magnetron sputtering apparatuses are widely used to deposit thin films on wafers to form piezoelectric layers or buffer layers. In particular, aluminum nitride film deposition is performed on wafers. In detail, the magnetron sputtering device has an aluminum target, and a mixed gas of argon and nitrogen is first introduced into the vacuum chamber to perform reactive sputtering. The argon gas is ionized into argon ions under the action of the electric field, and the negative voltage applied by the target material drives the argon ions to bombard the target material, thereby obtaining aluminum atoms or atomic groups. The aluminum atoms or atomic groups migrate down to the wafer surface under the action of gravity, and at the same time combine with nitrogen atoms under the action of high temperature to form an aluminum nitride film.

However, in the thin film deposition process, a single-material (eg, silicon carbide) tray is generally used to carry wafers mainly composed of aluminum oxide, silicon, silicon carbide, and other materials. The thermal expansion coefficient relationship between the various materials is aluminum oxide>aluminum nitride>silicon carbide. As a result, during the high temperature process of depositing the aluminum nitride film, the film has a certain stress. This stress is more obvious in the epitaxial furnace at high temperature, which amplifies the influence of stress in the film forming process, which leads to the difference of epitaxial uniformity and affects the quality of the aluminum nitride film.

In addition, silicon carbide has a volume resistivity of approximately 10Ω·cm at high temperatures (eg, 500 degrees Celsius), in other words, silicon carbide will change from an insulator to a non-insulator. Therefore, during the deposition of the aluminum nitride film, the dual effects of the electric field and the magnetic field lead to a decrease in the energy of the ionized ions (atoms) reaching the wafer, thereby deteriorating the crystalline quality of the aluminum nitride film deposited on the wafer. . The invention provides a tray applied to a film deposition device, which can effectively reduce the stress during the formation of the aluminum nitride film during the manufacturing process, and reduce the influence of electric and magnetic field changes on the formation of the aluminum nitride film, thereby improving nitrogen The crystalline quality of aluminum films.

FIG. 1 is a schematic diagram of a tray 1 applied to a thin film deposition apparatus according to an embodiment of the present invention. In this embodiment, the thin film deposition device is a magnetron sputtering device, and the tray 1 is used to carry wafers in the magnetron sputtering device, so that the magnetron sputtering device can thin-film the wafers on the tray 1 deposition process. In this embodiment, the magnetron sputtering device is used to deposit aluminum nitride films on wafers. As shown in FIG. 1 , the tray 1 includes a first tray body 11 , a second tray body 12 and a plurality of connecting components 13 . The size of the first disc body 11 corresponds to the size of the second disc body 12 , wherein the lower surface of the first disc body 11 is provided with a plurality of first slots 21 and the upper surface of the second disc body 12 is provided with a plurality of first slots 21 . A plurality of second slots 22 corresponding to the number, position and shape. The connecting assembly 13 is fixed between the first slot 21 and the second slot 22 in the form of a tenon, so that the first tray 11 and the second tray 12 are fixedly connected to form a complete tray 1 .

In this embodiment, the first tray body 11 includes a plurality of through holes 111 for carrying wafers, and the first tray body 11 is made of a first material. The thermal expansion coefficient of the first material is approximately equal to the thermal expansion coefficient of the thin film, so as to reduce the influence of stress on the wafer when the thin film is deposited. The second disk body 12 is made of a second material different from the first material, wherein the volume resistivity of the first material is greater than the volume resistivity of the second material, so that the first disk body 11 can also maintain the film deposition process. It is an insulator to avoid the quality of the film being affected by the change of the magnetic field and electric field after becoming a non-insulator. In addition, the thermal conductivity of the second material is greater than that of the first material, so that the thermal energy can be smoothly conducted to the wafer placed on the first disk body 11 .

In detail, the first disk body 11 is made of aluminum nitride, and the second disk body 12 is made of silicon carbide. Referring to Table 1 below, silicon carbide has higher thermal conductivity, flexural strength, Young's modulus, and Vickers hardness, while aluminum nitride has higher thermal shock and thermal expansion coefficients. In addition, the volume resistivity of aluminum nitride is higher than that of silicon carbide at room temperature, 300 degrees Celsius, and 500 degrees Celsius. Table 1 category Aluminum Nitride Silicon Carbide Bulk density (g/cm ³ ) 3.31 3.1 Flexural strength (Mpa) 345 490 Young's modulus (GPa) 320 400 Vickers hardness (GPa) 11 twenty two Thermal shock (△T(℃)) 400 300 Thermal expansion coefficient (1×10-6/℃) (room temperature~500℃) 4.4 (room temperature~400℃) 3.8 Thermal conductivity (W/mK) 150 (room temperature) 170 (room temperature) Volume resistivity (Ω·cm) Room temperature 1.00E+14 300℃1.00E+10 500℃1.00E+07 Room temperature 1.00E+4 300℃ 1.00E+2 500℃ 10

Therefore, the first disk body 11 made of aluminum nitride has better insulating effect, while the second disk body 12 made of silicon carbide has better thermal conductivity and heat distribution effect. In this way, the composite tray 1 using the first disc body 11 and the second disc body 12 can maintain the characteristics of high resistivity at high temperature, and at the same time maintain the advantage of easy heat conduction, thereby improving the crystal quality of the film and stabilizing the film production.

In addition, since the first disk body 11 is made of aluminum nitride, if the film deposited on the wafer is also made of aluminum nitride, the thermal expansion coefficients of the first material and the film are equal. In this way, when the magnetron sputtering device performs thin film deposition on the wafer placed in the through hole 111, since the material of the first disk body 11 is the same as that of the thin film, it can effectively reduce the feeling of the thin film during the deposition process. stress.

However, the present invention is not limited to preparing the first disk body 11 with aluminum nitride. Those skilled in the art should understand that as long as the thermal expansion coefficients of the first material and the film-forming material are approximately equal, the stress experienced by the film during deposition can be reduced. In the present invention, the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of the film material is limited to a specific value. For example, assuming that the thermal expansion coefficient of the first material is TA and the thermal expansion coefficient of the film material is TB, it is defined in the present invention that (TA-TB)/TA is less than 20%. In this way, even if the first material is different from the film material, the stress experienced by the film during deposition can also be reduced.

FIG. 2 is a schematic diagram of the first disk body 11 according to an embodiment of the present invention. In this embodiment, the diameter of the first disc body 11 is in the range of 300 mm to 480 mm, and the thickness H1 is in the range of 2 mm to 4 mm. If the size of the first disk body 11 is larger, in order to prevent the disk body from being easily broken, the thickness H1 is relatively thicker. However, if the thickness H1 is thicker, the thermal conductivity will be poorer, which will affect the formation of thin film crystals. Preferably, the diameter of the first disc body 11 is 300 mm, and the thickness H1 of the first disc body 11 is 2 mm.

As shown in the embodiment of FIG. 1 , the first tray body 11 includes a plurality of through holes 111 for carrying wafers (as shown in FIG. 1 , the first tray body 11 has five through holes 111 ), wherein the through holes 111 may be Reduce the stress of the wafer due to heat during the process. As shown in FIG. 2 , in detail, the through hole 111 is divided into an upper part 111_1 and a lower part 111_2 , wherein the upper part 111_1 is the appearance of the through hole 111 observed when overlooking the upper surface of the first plate body 11 , and the lower part 111_2 is the appearance of the through hole 111 . The appearance of the through hole 111 observed when the lower surface of the first disk body 11 is viewed from the bottom. In this embodiment, the diameter R1 of the upper part 111_1 of the through hole is larger than the diameter R2 of the lower part 111_2 of the through hole. The diameter of the wafer is generally 100mm and the thickness is 0.6mm. If the diameter R1 of the upper part 111_1 of the through hole is too small, the wafer will not be easily put in or taken out, and if the diameter R1 is too large, the wafer will slide easily. Therefore, in this embodiment, the diameter R1 of the upper through hole 111_1 is in the range of 100.5 mm to 102 mm, and the hole depth H2 is in the range of 1 mm to 3 mm. Preferably, the diameter R1 of the upper part 111_1 of the through hole is 111 mm. The hole depth of the upper part 111_1 of the through hole is adjusted according to the thickness of the first plate body 11 .

In addition, if the diameter R2 of the lower part 111_2 of the through hole is too small, it is not conducive to heat conduction, and if the diameter R2 is too large, the wafer cannot be supported. Therefore, in the present embodiment, the diameter R2 of the lower part 111_2 of the through hole is in the range of 80 mm to 98 mm, and the hole depth H3 is in the range of 1 mm to 3 mm. Preferably, the diameter R2 of the lower part 111_2 of the through hole is 94 mm, and the hole depth H3 is 1 mm.

Further, as shown in FIG. 2 , the upper surface of the first disk body 11 is provided with a circle of chamfered structures 300 adjacent to the through holes 111 , wherein the chamfered structures 300 can effectively prevent the accumulation of particles during the process and avoid the wafer pollution. In this embodiment, the chamfered structure 300 presents an angle θ, wherein the angle θ ranges from 30 degrees to 60 degrees, and the right-angle side L of the chamfered structure 300 ranges from 0.3 mm to 2 mm. Preferably, the angle θ of the chamfered structure 300 is 45 degrees, and the right-angled side L is 0.5 mm.

As shown in the embodiment of FIG. 1 , the lower surface of the first disc body 11 has a plurality of first slots 21 , the upper surface of the second disc body 12 has a plurality of second slots 22 , and the connecting component 13 is formed by a tenon. The form is fixed between the first slot 21 and the second slot 22 . If the diameter R3 of the first slot 21 is too small, the supporting force of the connecting element 13 will be too large, resulting in damage to the first disk body 11; In this embodiment, the diameter R3 of the first slot 21 ranges from 10 mm to 50 mm. Preferably, the diameter R3 of the first slot 21 is 22 mm. In this embodiment, the hole depth H4 of the first slot 21 ranges from 0.5 mm to 3 mm. Preferably, the hole depth H4 of the first slot 21 is 1 mm.

FIG. 3 is a schematic diagram of the second disk body 12 according to an embodiment of the present invention. As shown in the embodiment of FIG. 1 , the shape and size of the second disk body 12 correspond to the shape and size of the first disk body 11 , and the shape and position of the second slot 22 correspond to the shape and position of the first slot 21 . In this embodiment, the diameter of the second disc body 12 is in the range of 300 mm to 480 mm, and the thickness H5 of the second disc body 12 is in the range of 1 mm to 4 mm. If the thickness H5 of the second tray body 12 is too small, the tray 1 is easily broken, and if the thickness H5 is too large, the weight of the tray 1 is too heavy and it is difficult to handle. Preferably, the diameter of the second disc body 12 is the same as the diameter of the first disc body 11 , which is 300 mm, and the thickness H5 is 2 mm.

Corresponding to the first slot 21 , in this embodiment, the diameter R4 of the second slot 22 ranges from 10 mm to 50 mm, and the hole depth H6 ranges from 0.5 mm to 3 mm. Preferably, the diameter R4 of the second slot 22 is 22 mm the same as the diameter R3 of the first slot 21 , and the hole depth H6 of the second slot 22 is 1 mm the same as the hole depth H4 of the first slot 21 .

In this embodiment, the lower surface of the first disk body 11 has six uniformly distributed first slots 21 . Correspondingly, there are 6 evenly distributed second slots 22 on the upper surface of the second disk body 12 . However, those skilled in the art should easily understand that as long as the first disk body 11 and the second disk body 12 can be stably connected, the number of the first slot 21 and the second slot 22 is not a limitation of the present invention .

The connection assembly 13 is located between the first slot 21 and the second slot 22 in the form of a tenon, so that the first tray 11 and the second tray 12 are fixedly connected to form the tray 1 . Referring to FIG. 4 , FIG. 4 is a schematic diagram of the connecting assembly 13 according to an embodiment of the present invention. If the diameter R5 of the connecting element 13 as the tenon is too small, the first disk body 11 and the second disk body 12 are easy to slide, and if the diameter R5 is too large, it is not easy to be stuck into the first slot 21 and the second slot between 22. In this embodiment, the diameter R5 of the connecting component 13 is in the range of 21.6 mm to 21.8 mm. Preferably, the diameter R5 of the connecting assembly 13 is 21.8 mm. In this embodiment, the height H7 of the connecting component 13 ranges from 2 mm to 3 mm. According to design requirements, the tray 1 can have multiple sets of connecting components 13 with different heights, and the connecting components 13 can be replaced according to the process needs to adjust the height, thereby adjusting the distance between the wafer and the target, and expanding the process debugging window.

It should be noted that, in the above embodiment, the connecting component 13 is cylindrical, and the first slot 21 and the second slot 22 are correspondingly cylindrical spaces. However, those skilled in the art should easily understand that the connecting element 13 serving as the tenon can be other columnar shapes, and the first slot 21 and the second slot 22 can also have corresponding changes, which is not the present invention a limitation.

Referring to FIG. 1 again, the upper surfaces of the first disk body 11 and the second disk body 12 have an identification symbol (eg, a triangle in the figure), and the identification symbols of the first disk body 11 and the second disk body 12 can be aligned after the identification symbols are aligned. The first disc body 11 and the second disc body 12 are fixedly connected through the connecting assembly 13 . The tray 1 shown in FIG. 5 is a form in which the first tray body 11 and the second tray body 12 are combined with a connecting assembly 13 . In this embodiment, the diameter R0 of the combined tray 1 is the same as the diameter of the first tray 11 and the diameter of the second tray 12 . Preferably, the diameter R0 of the combined tray 1 is 300mm. In this embodiment, the thickness H0 of the combined tray 1 ranges from 4 mm to 6 mm.

The applicant found through experiments that the strength of the tray will change with the increase of the number of manufacturing processes, thereby affecting the quality of the film crystallization. Referring to FIG. 6, FIG. 6 shows a graph of pallet strength versus number of processes. It can be observed from Figure 6 that the 002 intensity measured by the X-ray diffractometer gradually decreases with the increase of the number of processes performed for the tray of traditional single material (such as silicon carbide), and the final 002 intensity decreases by 15%. This data shows that with the increase of the number of processes, the quality of the aluminum nitride crystal grown on a single material (such as silicon carbide) tray-mounted wafer is slightly worse, which leads to the growth reflectivity of the light-emitting diode epitaxial growth of gallium nitride. Low, the surface is rough and does not vibrate, and there is a risk of fogging. On the other hand, the 002 strength of the pallet 1 of the composite structure proposed by the present invention only fluctuates by about 5% with the increase of the number of processes. In other words, using the tray 1 for the thin film deposition process will improve the crystal quality of the aluminum nitride, thereby widening the process window of the epitaxial growth of the light emitting diode.

In addition, the applicant examined the characterization of the film crystallization produced using the composite structural tray 1 and a tray of a traditional single material (eg, silicon carbide), and obtained Table 2 below. It can be seen from the data in Table 2 that the crystal quality of the aluminum nitride thin film prepared by sputtering using the composite tray 1 is improved to a certain extent. From the test results of the X-ray diffractometer, the 002 and 102 intensity values of the aluminum nitride film prepared by the composite tray 1 can be increased by more than 10%, and the crystal quality is better than that of the film produced by the tray using a traditional single material (such as silicon carbide). crystallization. Table 2 Aluminum Nitride 002 Aluminum Nitride 102 Full width at half maximum (arcsec) Strength (CPS) Full width at half maximum (arcsec) Strength (CPS) Traditional Single Material Tray - - - - Composite tray 1 ↓1% ↑15% ↓10% ↑10%

Next, the applicant compares the performance of the gallium nitride light emitting diode chips produced using the composite tray 1 and a tray made of a traditional single material (eg, silicon carbide), and obtains the following Table 3. It can be seen from Table 3 that the added chamfer structure 300 and the through hole 111 of the composite tray 1 can reduce the stress of the film during the growth process, thereby improving the warpage of gallium nitride during the epitaxy process. Therefore, the composite tray is used. 1 When the resulting aluminum nitride film is used as a buffer layer, the GaN wavelength uniformity (STD) is more consistent than that of the aluminum nitride film produced using a traditional single material (such as silicon carbide) tray, and the reverse The voltage and anti-static pass rate have been greatly improved; at the same time, the crystalline quality of the aluminum nitride film grown using the composite tray 1 is better than that of the aluminum nitride film produced by using a traditional single material (such as silicon carbide) tray The crystalline quality of the thin film further contributes to the improvement of the quality of the light-emitting diode epitaxial gallium nitride. table 3 Wavelength Uniformity (STD) Brightness (LOP) Forward Voltage (VF) Reverse Voltage (VR) Antistatic pass rate (ESD) Traditional Single Material Tray 1.3-1.9 normal normal normal normal Composite tray 1 0.9-1.3 normal normal increase increase

The foregoing summarizes features of several embodiments so that those skilled in the art may better understand aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments described herein. Those skilled in the art should also understand that these equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they can make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.

1: Tray 11: The first plate 12: The second plate 13: Connect Components 21: The first slot 22: The second slot 111: Through hole 111_1: Upper part of through hole 111_2: lower part of through hole R0, R1, R2, R3, R4, R5: Diameter H0, H1: Thickness H2, H3, H4, H5, H6: hole depth H7: height

Aspects of the present disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that in accordance with standard practice in the industry, the various components are not drawn to scale. In fact, the dimensions of the various components may be arbitrarily increased or decreased for clarity of discussion. FIG. 1 is a schematic diagram of a tray according to an embodiment of the present invention. FIG. 2 is a schematic diagram of a first disk body according to an embodiment of the present invention. 3 is a schematic diagram of a second disk body according to an embodiment of the present invention. FIG. 4 is a schematic diagram of a connection assembly according to an embodiment of the present invention. FIG. 5 is a schematic diagram of a combined tray according to an embodiment of the present invention. FIG. 6 is a schematic diagram illustrating the variation of the 002 strength of the tray with respect to the number of processes according to an embodiment of the present invention.

1: Tray

11: The first plate

12: The second plate

13: Connect Components

21: The first slot

22: The second slot

111: Through hole

Claims (11)

A tray applied to a thin film deposition device, comprising: a first tray body, the first tray body includes a plurality of through holes, the size of each through hole corresponds to the size of a wafer, and each through hole is used for accommodating a wafer , and the lower surface of the first plate body is provided with a plurality of first slots; a second plate body, the size of the second plate body is corresponding to the size of the first plate body, and the second plate body is A plurality of second slots are disposed on an upper surface, wherein the shapes and positions of the plurality of second slots correspond to the shapes and positions of the plurality of first slots; and a connecting component is located in the one-to-one corresponding The first slot and the second slot are used to realize the fixed connection of the first disc body and the second disc body; wherein the first disc body is made of a first material, and the second disc body is made of a A second material is prepared, and the relative deviation between the thermal expansion coefficient of the first material and the thermal expansion coefficient of a film to be deposited is less than 20%, so as to reduce the influence of stress when depositing a film on the wafer; wherein the volume resistance of the first material The ratio is greater than the volume resistivity of the second material, so that the first disk body forms an insulator when the thin film is deposited on the wafer. The tray of claim 1, wherein the thermal conductivity of the second material is greater than the thermal conductivity of the first material. The tray of claim 1, wherein the upper surface of the first tray body is provided with a chamfer structure adjacent to the through hole. The tray of claim 3, wherein the angle between the chamfered structure and the upper surface of the first tray body is in the range of 30 degrees to 60 degrees, and the length of the right-angle side of the chamfered structure is in the range of 0.3 mm to 2 mm. The tray of claim 4, wherein the angle between the chamfered structure and the upper surface of the first tray body is 45 degrees, and the length of the right-angled side of the chamfered structure is 0.5 mm. The tray of claim 1, wherein the height of the first tray body ranges from 2 mm to 4 mm. The tray of claim 1, wherein the through hole has an upper portion and a lower portion, and the diameter of the upper portion is larger than the diameter of the lower portion. The pallet of claim 7, wherein the diameter of the upper portion ranges from 100.5 mm to 102 mm, and the depth of the upper portion ranges from 1 mm to 3 mm. The pallet of claim 7, wherein the diameter of the lower portion ranges from 80 mm to 98 mm, and the depth of the lower portion ranges from 1 mm to 3 mm. The pallet of claim 1, wherein the height of the connecting assembly is in the range of 2 mm to 3 mm. The tray of claim 1, wherein the first material is aluminum nitride, and the second material is carbon Silicon.

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