CN106893999B - A kind of preparation method of GaN on Si wafers - Google Patents

A kind of preparation method of GaN on Si wafers Download PDF

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CN106893999B
CN106893999B CN201510965134.1A CN201510965134A CN106893999B CN 106893999 B CN106893999 B CN 106893999B CN 201510965134 A CN201510965134 A CN 201510965134A CN 106893999 B CN106893999 B CN 106893999B
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reaction chamber
gan
wafers
buffer layer
reaction
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CN106893999A (en
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张森
陈爱华
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Zhongsheng Photoelectric Equipment (shanghai) Ltd By Share Ltd
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Zhongsheng Photoelectric Equipment (shanghai) Ltd By Share Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride

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  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
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Abstract

The invention provides a kind of method that GaN on Si wafers are prepared using MOCVD device, the preparation method prepares GaN on Si wafers using reaction chamber step by step.Concretely comprise the following steps：AlN films are formed in silicon-based substrate by extension reaction in the first reaction chamber, then high aluminium component AlGaN cushions are deposited on AlN films；And then low aluminium component AlGaN cushions are further deposited in the second reaction chamber, then deposit GaN layer on the cushion, GaN on Si wafers are prepared, the main distinction of two reaction chambers is that the height of the first reaction chamber is less than the second reaction chamber.The present invention can effectively eliminate gallium melt back caused by the crystal defect problem such as cause electrical yields low, while improve the crystal mass of wafer, effectively lift production capacity and reduce the cost of epitaxial growth.

Description

A kind of preparation method of GaN-on-Si wafers
Technical field
The invention belongs to semiconductor applications, it is related to the wafer preparation method of GaN-on-Si a kind of, more particularly to a kind of utilizes The method that MOCVD reaction chambers prepare GaN-on-Si wafers.
Background technology
As Energy Efficiency Standard improves constantly, the room for improvement of the power device based on silicon (Si) material is less and less；People Field of new materials is turned one's attention to, to realize basic improvement, triggers the revolutionary breakthrough of power device technology of new generation.
In numerous new materials, the composite based on gallium nitride (GaN) is most noticeable.GaN base power device, which has, to be hit The advantages that voltage is high, current density is big, switching speed is fast and operating temperature is high is worn, performance is much better than Si base devices；Using GaN The electronic system efficiency of base device for power switching can improve 3.5~7%, and volume can reduce 35%, have high-performance and highly reliable concurrently Property.GaN epitaxy material can select a variety of substrates, and wherein Si substrates Epitaxial growth GaN has obvious cost advantage, a side The price of face Si substrates is very low, and the size of another aspect Si substrates is larger (8 inches), can form the advantage of large-scale production.
The major programme for preparing silicon based gallium nitride (GaN-on-Si) wafer at present is that (metal is organic using existing MOCVD Chemical vapor deposition) it is prepared by equipment.
MOCVD device is as a kind of typical CVD equipment, using the teaching of the invention it is possible to provide is given birth on chip (such as sapphire epitaxial wafer) surface It is long to be used for the conditions such as temperature, pressure and chemical gas component required during luminous crystal structure GaN (gallium nitride).MOCVD is set The reaction chamber of vacuum is provided with standby, pallet is provided with reaction chamber, is introduced reaction gases into by inlet duct (such as spray head) In reaction chamber, and the surface for being transported to the chip being placed on pallet is handled, so as to grow specific crystal structure example Such as GaN structures.
But existing MOCVD device is characterized at one primarily directed to the photodiode (LED) of blue green light Whole growth steps are completed in reaction chamber, untill required material structure is obtained.Therefore current MOCVD device system is utilized The method of standby GaN-on-Si wafers more or less be present, as the growth rate of aluminium nitride is relatively low, aluminium utilization ratio It is relatively low, GaN-on-Si wafer qualities are poor etc..
The content of the invention
For above-mentioned problems of the prior art, the invention provides one kind to utilize multiple Metallo-Organic Chemical Vapors The method that GaN-on-Si wafers are made in precipitation equipment (MOCVD) reaction chamber step by step.
To use following technical scheme up to this purpose, the present invention：
In a first aspect, prepare GaN-on-Si crystalline substances using metal organic chemical vapor deposition device the invention provides one kind Round method, the metal organic chemical vapor deposition device include two different reaction chambers, specifically include following steps：
By extension reaction depositing Al N (aluminium nitride) film in silicon-based substrate in the first reaction chamber, then in AlN films Upper deposition composition is AlxGa1-xN first buffer layer, wherein A ＜ X≤0.9, A are 0.4~0.6；
There is the silicon-based substrate of AlN films and first buffer layer to be transferred in the second reaction chamber deposition；
It is Al to react further deposition composition by extension in the second reaction chamberYGa1-YN second buffer layer, wherein 0.1≤Y≤A, A are 0.4~0.6, then deposit GaN layer in the second buffer layer, GaN-on-Si wafers are prepared.
Wherein, it is Al in the composition of depositionxGa1-xIn N first buffer layer A ＜ X≤0.9, X can be 0.5,0.6,0.7, 0.8 or 0.9 etc., A are 0.4~0.6, such as 0.4,0.5 or 0.6.
It is Al in the composition of depositionYGa1-Y0.1≤Y≤A in N second buffer layer, Y can be 0.1,0.2,0.3,0.4, 0.5 or 0.6 etc., A are 0.4~0.6, such as 0.4,0.5 or 0.6.
As the preferred scheme of the present invention, the first reaction chamber and the second reaction chamber are metal organic chemical vapor depositions Reaction chamber, the height of the first reaction chamber are less than the second reaction chamber；Wherein, described " height " refers to spray head following table in reaction chamber Face is the distance between to tray upper surface.
As the preferred scheme of the present invention, the first reaction chamber is highly 15~25mm, such as 15mm, 17mm, 20mm, 23mm Or 25mm etc.；Second reaction chamber is highly 50~100mm, such as 50mm, 60mm, 70mm, 80mm, 90mm or 100mm etc..
The present invention according in AlGaN cushions in the GaN-on-Si wafers that are prepared aluminium constituent content number, will AlGaN cushions are divided into high aluminium component AlGaN cushions and low aluminium component AlGaN cushions, wherein high aluminium component AlGaN bufferings Layer is that composition is AlxGa1-xN first buffer layer, A ＜ X≤0.9；Low aluminium component AlGaN cushions are that composition is AlYGa1-YN's Second buffer layer, wherein 0.1≤Y≤A, A are 0.4~0.6.
The height of first reaction chamber is due in material preparation process less than the second reaction chamber, and high aluminium component AlGaN delays Pre-reaction generation aluminium aggregate easily occurs with ammonia for the aluminium organic source rushed in layer, reduces the utilization rate of aluminium, limits AlN growths Aluminium doping efficiency in speed and AlGaN, but by reducing the height of reaction chamber, that is, shorten aluminium organic source and easily mixed with ammonia Distance is closed, can effectively suppress pre-reaction, realizes aluminium doping high in high AlN growth rates and AlGaN.Prepared in material During, the pre-reaction of aluminium organic source and ammonia weakens as aluminium content is reduced in low aluminium component AlGaN cushions, and material The accessory substance for being easily deposited on reaction cavity wall generated in reaction is more notable on the influence of GaN-on-Si wafers, thus needs to select Suitable reaction chamber height optimization Flow Field Distribution is selected, suppresses the deposition of accessory substance, thus the height of the second reaction chamber is greater than One reaction chamber.
As the preferred scheme of the present invention, the first reaction chamber and the second reaction chamber are monolithic reaction chambers.
As the preferred scheme of the present invention, the first reaction chamber and the equal supporting tray rotating speed of the second reaction chamber be more than 500 turns/ The high speed rotation of minute.
It is in airtight vacuum environment by the process that silicon-based substrate is transferred to the second reaction chamber as the preferred scheme of the present invention Lower completion.
As the preferred scheme of the present invention, deposition has the silicon substrate of AlN films and first buffer layer in the first reaction chamber After underlayer temperature is down to 400~500 DEG C, the silicon-based substrate is transferred in the second reaction chamber, wherein cooling temperature can be 400 DEG C, 430 DEG C, 450 DEG C, 470 DEG C or 500 DEG C etc..
As the preferred scheme of the present invention, the temperature of depositing Al N thin film and deposition first buffer layer in the first reaction chamber For 1150~1250 DEG C, such as 1150 DEG C, 1170 DEG C, 1200 DEG C, 1230 DEG C or 1250 DEG C etc.；Pressure is 45~55mbar, example Such as 45mbar, 47mbar, 50mbar, 53mbar or 55mbar.
Preferably, the temperature of middle deposition second buffer layer and GaN layer is 1050~1150 DEG C in the second reaction chamber, such as 1050 DEG C, 1070 DEG C, 1100 DEG C, 1130 DEG C or 1150 DEG C etc.；Pressure is 100~200mbar, such as 100mbar, 130mbar, 150mbar, 170mbar or 200mbar etc..
It is anti-first while the second reaction chamber deposits second buffer layer and GaN layer as the preferred scheme of the present invention Answer intracavitary depositing Al N thin film and first buffer layer in another batch silicon-based substrate.
As the preferred scheme of the present invention, the described method comprises the following steps：
Pass through extension reaction depositing Al N thin film in silicon-based substrate, then the deposition group on AlN films in the first reaction chamber As AlxGa1-xN first buffer layer, wherein A ＜ X≤0.9, A are 0.4~0.6, and depositing temperature is 1150~1250 DEG C, pressure Power is 45~55mbar；
The silicon-based substrate temperature that being deposited in the first reaction chamber has AlN films and first buffer layer is down to 400~500 DEG C Afterwards, the silicon-based substrate is transferred in the second reaction chamber under airtight vacuum environment；
It is Al to react further deposition composition by extension in the second reaction chamberYGa1-YN second buffer layer, wherein 0.1≤Y≤A, A are 0.4~0.6, and GaN layer is deposited on the cushion, and depositing temperature is 1050~1150 DEG C, pressure 100 ~200mbar, GaN-on-Si wafers are prepared.
Compared with prior art, the invention has the advantages that：
Metal organic chemical vapor deposition device of the present invention is brilliant using two reaction chamber epitaxial growth GaN-on-Si Circle, can effectively eliminate gallium melt back caused by the crystal defect problem such as cause electrical yields low, improve the growth speed of aluminium nitride Rate and aluminium utilization ratio；Further, also improve technique and repeat uniformity and reliability；Moreover it is possible to improve epitaxial growth The uniformity and device efficiency of material, effectively lift production capacity and reduce the cost of epitaxial growth.
Brief description of the drawings：
Fig. 1 is the process chart of the method for the present invention for preparing GaN-on-Si wafers；
Fig. 2 is the growth rate of two kinds of MOCVD depositing Al N thin films in the embodiment of the present invention 1 with the variation diagram of TMAl flows；
Fig. 3 is to survey aluminium component and theoretical aluminium component in the AlGaN films that in the embodiment of the present invention 2 prepared by two kinds of MOCVD Relativity figure, wherein Fig. 3 a be embodiment 2 in using the method for the invention prepare AlGaN films in survey aluminium component With the relativity figure of theoretical aluminium group, Fig. 3 b are that aluminium component and theoretical aluminium are surveyed in the AlGaN films prepared using conventional method The relativity figure of group.
Embodiment
Below in conjunction with several specific embodiments, exemplary illustration and help further understand the present invention, but embodiment has Body details does not represent whole technical schemes under present inventive concept merely to the explanation present invention, therefore should not be construed as to this Total technical scheme to be invented to limit, some are changed without departing from the unsubstantiality of inventive concept in technical staff, such as with tool The technical characteristic for having same or similar technique effect simply changes or replaced, and belongs to the scope of the present invention.
Present inventor is by analysis, in the method for traditional production GaN-on-Si wafers, due to same anti- Answer intracavitary to complete all epitaxial steps, the phenomenon of gallium melt back can be produced, caused crystal defect causes electrical yields low.
For the deficiency of the method for traditional production GaN-on-Si wafers, the application specific embodiment part provides one The method that kind prepares GaN-on-Si wafers using metal organic chemical vapor deposition device, the metal organic chemical vapor deposition Device includes multiple different reaction chambers, such as two, and its idiographic flow is as shown in Figure 1：
First, by extension reaction depositing Al N thin film in silicon-based substrate in the first reaction chamber, then on AlN films Deposition composition is AlxGa1-xN first buffer layer, wherein A ＜ X≤0.9, A are 0.4~0.6, and the process depositing temperature is 1150 ~1250 DEG C, pressure is 45~55mbar.
Then, in the first reaction chamber deposition have the silicon-based substrate temperature of AlN films and first buffer layer be down to 400~ After 500 DEG C, silicon-based substrate is transferred in the second reaction chamber under airtight vacuum environment.
Finally, it is Al to react further deposition composition by extension in the second reaction chamberYGa1-YN second buffer layer, Wherein 0.1≤Y≤A, A are 0.4~0.6, deposit GaN layer in the second buffer layer, GaN-on-Si wafers are prepared, should Process depositing temperature is 1050~1150 DEG C, and pressure is 100~200mbar, and GaN-on-Si wafers are prepared.
Further, the first reaction chamber and the second reaction chamber are MOCVD reaction chambers, and the height of the first reaction chamber is less than Second reaction chamber, wherein, " height " refers in reaction chamber spray head lower surface the distance between to tray upper surface.Can at one In the embodiment of choosing, the first reaction chamber and the second reaction chamber are monolithic reaction chamber.In another optional embodiment, First reaction chamber and the second reaction chamber are supported to rotate at a high speed, i.e., the rotating speed of pallet is more than 500rpm, i.e. pallet in reaction chamber Rotating speed is more than or equal to 500 revs/min.Further, the method provided using the present embodiment, can form GaN-on-Si wafers Flowing water prepare.I.e. in the second reaction chamber in a certain batch (one or more pieces) silicon-based substrate deposit second buffer layer and While GaN layer, in the first reaction chamber in another batch (one or more pieces) silicon-based substrate depositing Al N thin film and first Cushion, thus GaN-on-Si wafer production abilities can be effectively improved.
Embodiment 1：
One kind is present embodiments provided using distributed MOCVD device (i.e. the MOCVD device includes multiple reaction chambers) system AlN methods in standby GaN-on-Si wafers, this method comprise the following steps：
The first reaction chamber of distributed MOCVD device will be placed in equipped with Si substrates, the height of the reaction chamber is 15~25mm, Such as 20mm, temperature is risen to 1200 DEG C, pressure is set as 50mbar, on a si substrate depositing Al N thin film, has by adjusting aluminium The flow in machine source (TMAl), real-time in-situ measure the growth rate of AlN films.
For convenience of description the advantages of the embodiment of the present invention, same technique is taken again in traditional single step MOCVD (one Whole epitaxial steps are completed in individual reaction chamber) in repeat the experiment, because traditional single step MOCVD considers more extensions step Suddenly, the limiting factor that the height of reaction chamber is subject to is more, and for a reaction chamber, reaction chamber height is once it is determined that rear usual It is no longer able to adjust.In existing MOCVD device, rotation (more than 500rpm, i.e., more than 500 turns/points at a high speed is particularly supported Clock) MOCVD device in, the height of reaction chamber is typically set to 50~100mm.
Wherein the size of Si substrate layers is 8 inches (200mm), and thickness is 1000 μm.
The growth rate of two methods depositing Al N thin film is with the change of TMAl flows as shown in Fig. 2 Gap is represented instead in Fig. 2 Answer chamber height.
From figure 2 it can be seen that in the prior art, when the height of reaction chamber is 50mm, AlN growth rate is with TMAl Flow be slowly increased, when TMAl flows are more than 800sccm (sccm is gas flow unit, and it is per cubic centimeter to represent standard), Growth rate saturation, AlN maximum growth rate is only 0.2 μm/h.And in the present embodiment, when the height of reaction chamber is 20mm When, AlN growth rates linearly increase with TMAl flow, untill TMAl flow is more than 2000sccm, AlN maximum growths Speed is up to 1.26 μm/h, significantly beyond prior art.
It is that height is smaller in the first reaction chamber this example demonstrates that being prepared using distributed MOCVD in GaN-on-Si wafers Reaction chamber depositing Al N during, AlN growth rate improves more in the prior art, and the utilization rate of aluminium improves.
Embodiment 2：
Present embodiments provide a kind of AlGaN methods in preparation GaN-on-Si wafers using distributed MOCVD, the side Method is as follows：
The first reaction chamber of distributed MOCVD device will be placed in equipped with Si substrates, the height of the reaction chamber is 20mm, by temperature Degree rises to 1200 DEG C, and pressure is set as 50mbar, deposits 200nmAlN on a si substrate, then proceedes to deposit 400nm AlGaN Film (first buffer layer), by adjusting the ratio of aluminium organic source and gallium organic source, 3 samples of different aluminum component are prepared for, Then take out the aluminium component in measurement sample.For convenience of description the advantages of the present embodiment, but it is (high in traditional single step MOCVD Spend for 50mm) in take same method to be prepared for other three pieces of AlGaN samples, after end to be grown take out measurement sample in Aluminium component.
The relativity that aluminium component and theoretical aluminium component are surveyed in AlGaN films prepared by two kinds of MOCVD is as shown in Figure 3. It can be seen that from Fig. 3 a and the AlGaN of AlGaN particularly high aluminium components prepared using distributed MOCVD first reaction chamber When, actual measurement aluminium component is about the 80% of theoretical aluminium component.As shown in Figure 3 b, traditional single step reaction chamber prepares AlGaN, real It is about the 50% of theoretical aluminium component to survey aluminium component.
It is that height is smaller in the first reaction chamber this example demonstrates that being prepared using distributed MOCVD in GaN-on-Si wafers Reaction chamber deposition high aluminium component AlGaN during, AlGaN aluminium actual content significantly improves more in the prior art, aluminium Utilization rate improves.
Embodiment 3：
A kind of method that GaN-on-Si wafers are prepared using MOCVD is present embodiments provided, methods described is as follows：
The first reaction chamber of MOCVD device will be placed in equipped with Si substrates, temperature be risen to 1150~1250 DEG C, pressure setting For 45~55mbar, such as temperature risen to 1200 DEG C, pressure is set as 50mbar, is sequentially depositing AlN films on a si substrate With first buffer layer AlxGa1-xN (wherein, A=0.5,0.5 ＜ X≤0.9), after the completion of deposition, treat that first reactor temperature is down to After 450 DEG C, the second reaction chamber is transferred them to, the usual transfer process is completed under airtight vacuum environment.It is anti-second Answer in chamber and temperature is risen to 1050~1150 DEG C, pressure is 100~200mbar, such as temperature is set as 1100 DEG C, setting pressure Power is 150mbar, is then sequentially depositing second buffer layer AlYGa1-YN (wherein A=0.5,0.1≤Y≤0.5) and GaN layer, system It is standby to obtain GaN-on-Si wafers.
The GaN-on-Si wafers being prepared have Si substrate layers, AlGaN cushions and a GaN layer, wherein Si substrate layers Size is 8 inches, and thickness is 1000 μm, there is the AlN films that a layer thickness is 200nm on Si substrates, and AlGaN cushions have two Layer, first layer is formed on AlN films, and aluminium constituent content is 60wt%, thickness 1000nm, and the second layer is formed at first layer In AlGaN layer, aluminium constituent content is 40wt%, thickness 1000nm, and GaN is formed in the second AlGaN layer, and thickness is 1.5 μm.
In order to show the characteristics of point reaction chamber prepares GaN-on-Si wafer methods step by step, again with traditional method, that is, adopt The GaN-on-Si wafers of same structure are prepared for a reaction chamber.
GaN-on-Si wafer detailed processes prepared by two methods, using reaction chamber, method prepares GaN-on-Si step by step The time of wafer is about 5 hours, and conventional method is about 8 hours, and the method for the embodiment of the present invention is found by contrasting and can be shown Write the preparation time for shortening wafer.
Two methods of contrast prepare the crystal mass of GaN-on-Si wafers, find the method preparation of the embodiment of the present invention GaN crystal quality is also superior to traditional method.The parameter for weighing GaN crystal quality is penetrated for the X in GaN (002) crystal faces and (102) face The width of line rocking curve, numerical value is smaller to show that crystal mass is better.According to test result, prepared by the method for the embodiment of the present invention GaN-on-Si wafers in GaN (002) crystal faces and (102) face X ray rocking curve width be respectively 1000 second of arcs and 2000 second of arcs, and use GaN (002) crystal faces and the X ray in (102) face in the GaN-on-Si wafers of conventional method preparation to wave The width of curve is respectively 2000 second of arcs and 3600 second of arcs.
Result in integrated embodiment 1-3 and comparative example can be seen that Metallo-Organic Chemical Vapor of the present invention and sink The method that product device prepares GaN-on-Si wafers step by step using two reaction chambers with difference in height：Gallium can effectively be eliminated The problem such as cause electrical yields low of crystal defect caused by melt back；Improve the aluminium component in the growth rate of aluminium nitride, AlGaN With aluminium utilization ratio；Shorten the preparation time of GaN-on-Si wafers；Improve the crystal mass of GaN-on-Si wafers.Meanwhile This method can also improve technique and repeat uniformity and reliability, device efficiency, effectively lift production capacity and reduce epitaxial growth Cost, more meet large-scale production needs.
Embodiment 4：
If the GaN-on-Si wafers for implementing to be prepared in 3 are as power device applications, it is also necessary to brilliant in GaN-on-Si Continue deposition 20nm AlGaN on circle, the wherein content of aluminium component is 20~30wt%.
Embodiment 5：
If the GaN-on-Si wafers being prepared in embodiment 3 are applied as LED, it is also necessary to are continued brilliant in GaN-on-Si Continue depositing n-type GaN, InGaN/GaN superlattices and p-type GaN on circle.
Applicant states that the present invention illustrates the method detailed of the present invention, but not office of the invention by above-described embodiment It is limited to above-mentioned method detailed, that is, does not mean that the present invention has to rely on above-mentioned method detailed and could implemented.Art Technical staff it will be clearly understood that any improvement in the present invention, equivalence replacement and auxiliary element to each raw material of product of the present invention Addition, selection of concrete mode etc., within the scope of all falling within protection scope of the present invention and disclosing.

Claims (8)

  1. A kind of 1. method that GaN-on-Si wafers are prepared using metal organic chemical vapor deposition device, it is characterised in that described Metal organic chemical vapor deposition device includes two different reaction chambers, and methods described specifically includes following steps：
    By extension reaction depositing Al N thin film in silicon-based substrate in the first reaction chamber, then deposit composition on AlN films and be AlxGa1-xN first buffer layer, wherein A ＜ X≤0.9, A are 0.4~0.6；
    There is the silicon-based substrate of AlN films and first buffer layer to be transferred in the second reaction chamber deposition；
    It is Al to react further deposition composition by extension in the second reaction chamberYGa1-YN second buffer layer, wherein 0.1≤Y ≤ A, A are 0.4~0.6, deposit GaN layer in the second buffer layer, GaN-on-Si wafers are prepared；
    First reaction chamber and the second reaction chamber are metal organic chemical vapor deposition reaction chambers, and the height of the first reaction chamber is small In the second reaction chamber；First reaction chamber is highly 15~25mm, and the second reaction chamber is highly 50~100mm.
  2. 2. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that the first reaction chamber and second Reaction chamber is monolithic reaction chamber.
  3. 3. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that be transferred to silicon-based substrate The process of second reaction chamber is completed under airtight vacuum environment.
  4. 4. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that sunk in the first reaction chamber After product has the silicon-based substrate temperature of AlN films and first buffer layer to be down to 400~500 DEG C, the silicon-based substrate is transferred to second In reaction chamber.
  5. 5. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that sunk in the first reaction chamber Product AlN films and the temperature for depositing first buffer layer are 1150~1250 DEG C, and pressure is 45~55mbar.
  6. 6. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that sunk in the second reaction chamber The temperature of product second buffer layer and GaN layer is 1050~1150 DEG C, and pressure is 100~200mbar.
  7. 7. the method according to claim 1 or 2 for preparing GaN-on-Si wafers, it is characterised in that the first reaction chamber and The equal supporting tray rotating speed of two reaction chambers rotates for the high speed of more than 500 turns/minute.
  8. 8. the method according to claim 1 for preparing GaN-on-Si wafers, it is characterised in that deposited in the second reaction chamber While second buffer layer and GaN layer, depositing Al N thin film and first is delayed in another batch silicon-based substrate in the first reaction chamber Rush layer.
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Publication number Priority date Publication date Assignee Title
CN101378017A (en) * 2008-09-19 2009-03-04 苏州纳维科技有限公司 Growth method for epitaxial layer on silicon-based graphical substrate
KR101078596B1 (en) * 2009-12-31 2011-11-01 엘아이지에이디피 주식회사 Method for metal organic chemical vapor deposition
CN203607375U (en) * 2013-11-04 2014-05-21 中晟光电设备（上海）有限公司 Multiple reactor chamber system used to manufacture power device
CN105118902A (en) * 2015-08-18 2015-12-02 西安电子科技大学 Yellow LED material based on m-plane SiC substrate and manufacturing method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101378017A (en) * 2008-09-19 2009-03-04 苏州纳维科技有限公司 Growth method for epitaxial layer on silicon-based graphical substrate
KR101078596B1 (en) * 2009-12-31 2011-11-01 엘아이지에이디피 주식회사 Method for metal organic chemical vapor deposition
CN203607375U (en) * 2013-11-04 2014-05-21 中晟光电设备（上海）有限公司 Multiple reactor chamber system used to manufacture power device
CN105118902A (en) * 2015-08-18 2015-12-02 西安电子科技大学 Yellow LED material based on m-plane SiC substrate and manufacturing method thereof

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