TWI760773B - Heat treatment method - Google Patents

Heat treatment method Download PDF

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TWI760773B
TWI760773B TW109121249A TW109121249A TWI760773B TW I760773 B TWI760773 B TW I760773B TW 109121249 A TW109121249 A TW 109121249A TW 109121249 A TW109121249 A TW 109121249A TW I760773 B TWI760773 B TW I760773B
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semiconductor wafer
substrate
emissivity
heat treatment
chamber
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TW202123341A (en
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上野智宏
北澤貴宏
野崎仁秀
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日商斯庫林集團股份有限公司
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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    • H01L21/68707—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a robot blade, or gripped by a gripper for conveyance

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Abstract

本發明提供一種即便形成有多層薄膜亦能夠正確地測定基板之溫度之熱處理方法及熱處理裝置。 The present invention provides a heat treatment method and heat treatment apparatus capable of accurately measuring the temperature of a substrate even if a multilayer thin film is formed.

其解決方法為，設定並輸入形成於半導體晶圓之正面之薄膜相關之膜資訊、半導體晶圓相關之基板資訊、及上部輻射溫度計之設置角度。基於上述各種資訊，計算形成有多層膜之半導體晶圓之正面之輻射率。該輻射率係自上部輻射溫度計之設置角度所觀察到之半導體晶圓之表觀輻射率。進而，基於上部輻射溫度計之感度分佈，求出半導體晶圓之正面之輻射率之加權平均值。使用所求出之輻射率之加權平均值，測定熱處理時半導體晶圓之正面溫度。由於是基於膜資訊等求出輻射率，故而即便形成有多層薄膜，亦能夠正確地測定半導體晶圓之正面溫度。 The solution is to set and input the film information related to the thin film formed on the front surface of the semiconductor wafer, the substrate information related to the semiconductor wafer, and the setting angle of the upper radiation thermometer. Based on the above-mentioned various information, the emissivity of the front surface of the semiconductor wafer on which the multilayer film is formed is calculated. The emissivity is the apparent emissivity of the semiconductor wafer observed from the setting angle of the upper radiation thermometer. Furthermore, based on the sensitivity distribution of the upper radiation thermometer, the weighted average value of the emissivity of the front surface of the semiconductor wafer is obtained. Using the weighted average value of the obtained emissivity, the front surface temperature of the semiconductor wafer during heat treatment was measured. Since the emissivity is obtained based on film information or the like, even if a multilayer thin film is formed, the front surface temperature of the semiconductor wafer can be accurately measured.

Description

熱處理方法 Heat treatment method

本發明係關於一種藉由對半導體晶圓等薄板狀精密電子基板(以下簡稱為「基板」)照射閃光而加熱該基板之熱處理方法及熱處理裝置。 The present invention relates to a heat treatment method and heat treatment apparatus for heating a thin-plate-shaped precision electronic substrate such as a semiconductor wafer (hereinafter simply referred to as a "substrate") by irradiating the substrate with flash.

半導體器件之製造工藝中，於極短時間內加熱半導體晶圓之閃光燈退火(FLA)備受關注。閃光燈退火係藉由使用氙氣閃光燈(以下，簡稱為「閃光燈」時即意指氙氣閃光燈)對半導體晶圓之正面照射閃光而僅使半導體晶圓之正面於極短時間(幾毫秒以下)內升溫之熱處理技術。 In the manufacturing process of semiconductor devices, flash lamp annealing (FLA), which heats semiconductor wafers in a very short time, has attracted much attention. Flash annealing is to heat up only the front side of the semiconductor wafer in a very short time (less than a few milliseconds) by irradiating the front side of the semiconductor wafer with a xenon flash lamp (hereinafter referred to as "flash lamp", which means a xenon flash lamp). heat treatment technology.

氙氣閃光燈之輻射光譜分佈係紫外區域至近紅外區域，波長較先前之鹵素燈短，與矽之半導體晶圓之基礎吸收帶大體一致。因此，於自氙氣閃光燈對半導體晶圓照射閃光時，透射光少，能夠使半導體晶圓急速地升溫。又，亦已判明：若為幾毫秒以下之極短時間之閃光照射，則能夠僅使半導體晶圓之正面附近選擇性地升溫。 The radiation spectral distribution of xenon flash lamps is from the ultraviolet region to the near-infrared region, and the wavelength is shorter than that of the previous halogen lamp, which is roughly consistent with the basic absorption band of silicon semiconductor wafers. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, there is little transmitted light, and the temperature of the semiconductor wafer can be rapidly increased. In addition, it has also been found that the temperature can be selectively raised only in the vicinity of the front surface of the semiconductor wafer by flash irradiation for an extremely short period of several milliseconds or less.

此種閃光燈退火用於需要於極短時間內加熱之處理，例如典型的是注入至半導體晶圓中之雜質之活化。若自閃光燈對藉由離子注入法而注入有雜質之半導體晶圓之正面照射閃光，則能夠將該半導體晶圓之正面在極短時間內升溫至活化溫度，能夠不使雜質較深地擴散而僅執行雜質活化。 Such flash annealing is used for processes that require heating in a very short time, such as the activation of impurities implanted into semiconductor wafers typically. If the front surface of the semiconductor wafer into which the impurities are implanted by the ion implantation method is irradiated with flash from the flash lamp, the front surface of the semiconductor wafer can be raised to the activation temperature in a very short time, and the impurities can be prevented from diffusing deeply. Perform impurity activation only.

於半導體晶圓之熱處理中(不限於閃光燈退火)，晶圓溫度之管理變得重要。於閃光燈退火中，照射閃光時半導體晶圓之正面之最高達到溫度亦成為是否已正確地進行處理之重要工藝管理指標。因此，一般藉由非接觸式輻射溫度計來測定半導體晶圓之溫度。於利用輻射溫度計進行之溫度測定中，測定對象物之輻射率是必需的，先前係使用矽之輻射率來測定半導體晶圓之溫度。 In thermal processing of semiconductor wafers (not limited to flash annealing), wafer temperature management becomes important. In flash annealing, the maximum temperature reached on the front side of the semiconductor wafer when the flash is irradiated also becomes an important process management indicator for whether it has been properly processed. Therefore, the temperature of the semiconductor wafer is generally measured by a non-contact radiation thermometer. In temperature measurement using a radiation thermometer, the emissivity of the object to be measured is necessary, and the emissivity of silicon has been used to measure the temperature of a semiconductor wafer previously.

於半導體晶圓之正面成膜有抗蝕膜、層間絕緣膜或高介電常數膜等各種薄膜之情況亦較多。此種形成有薄膜之半導體晶圓之輻射率成為與矽不同之值，但專利文獻1中公開了如下內容：若使輻射溫度計相對於半導體晶圓之測定角度變淺(例如15°以下)，則表觀輻射率將不再與薄膜之膜種類或膜厚相關。因此，藉由使輻射溫度計相對於半導體晶圓之設置角度變淺，即便使用矽之輻射率亦能夠測定出形成有薄膜之半導體晶圓之溫度。 Various thin films such as a resist film, an interlayer insulating film, or a high dielectric constant film are often formed on the front surface of a semiconductor wafer. The emissivity of a semiconductor wafer with such a thin film formed has a value different from that of silicon, but Patent Document 1 discloses that if the measurement angle of the radiation thermometer with respect to the semiconductor wafer is made shallow (for example, 15° or less), Then the apparent emissivity will no longer be related to the film type or film thickness of the film. Therefore, by making the installation angle of the radiation thermometer shallow with respect to the semiconductor wafer, the temperature of the semiconductor wafer on which the thin film is formed can be measured even using the emissivity of silicon.

[先前技術文獻] [Prior Art Literature] [專利文獻] [Patent Literature]

[專利文獻1]日本專利特開2018-157064號公報 [Patent Document 1] Japanese Patent Laid-Open No. 2018-157064

然而，於近年之半導體技術中，隨著三維高密度化之發展，有將各種薄膜多層(例如100層以上)地進行積層之傾向。已判明：若將薄膜多層地進行積層，則即便使輻射溫度計之測定角度變淺，表觀輻射率亦會大幅變動。因此，會產生在對形成有多層膜之半導體晶圓照射閃光時，無法正確地測定其正面之最高達到溫度之問題。若無法正確地測定閃光照射時半導體晶圓之正面之最高達到溫度，則將弄不清楚是否已正確地進行處理，結果，亦有良率變差之風險。 However, in recent semiconductor technology, with the development of three-dimensional high density, there is a tendency to laminate various thin films in multiple layers (eg, 100 or more layers). It has been found that the apparent emissivity fluctuates greatly even if the measurement angle of the radiation thermometer is made shallow when the thin films are laminated in multiple layers. Therefore, when the semiconductor wafer on which the multilayer film is formed is irradiated with a flash, the maximum temperature of the front surface cannot be accurately measured. If the maximum temperature reached on the front surface of the semiconductor wafer during flash irradiation cannot be accurately measured, it will be unclear whether or not the processing has been performed correctly, and as a result, there is a risk that the yield will be deteriorated.

本發明係鑒於上述問題而完成，其目的在於提供一種即便形成有多層薄膜亦能夠正確地測定基板之溫度之熱處理方法及熱處理裝置。 The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a heat treatment method and a heat treatment apparatus capable of accurately measuring the temperature of a substrate even if a multilayer thin film is formed.

為了解決上述問題，技術方案1之發明係一種熱處理方法，其特徵在於：該熱處理方法係藉由對基板照射閃光而加熱該基板者，且具備：輻射率計算步驟，其基於形成於基板上之薄膜相關之膜資訊、上述基板相關之基板資訊、及對上述基板之溫度進行測定之輻射溫度計之設置角度，計算自上述輻射溫度計所觀察到之上述基板之輻射率；及溫度測定步驟，其將上述輻射率計算步驟中計算出之上述輻射率設定於上述輻射溫度計，以上述輻射溫度計測定藉由閃光照射予以加熱後之上述基板之溫度。 In order to solve the above-mentioned problems, the invention of claim 1 is a heat treatment method, characterized in that the heat treatment method heats the substrate by irradiating a flash light on the substrate, and includes: an emissivity calculation step based on the radiance formed on the substrate. The film information related to the thin film, the substrate information related to the above-mentioned substrate, and the setting angle of the radiation thermometer for measuring the temperature of the above-mentioned substrate, the emissivity of the above-mentioned substrate observed from the above-mentioned radiation thermometer is calculated; and the temperature measurement step, which will The emissivity calculated in the emissivity calculation step is set in the radiation thermometer, and the temperature of the substrate heated by flash irradiation is measured with the radiation thermometer.

又，技術方案2之發明係如技術方案1之發明之熱處理方法，其特徵在於：上述膜資訊包含上述薄膜之膜種類、膜厚及層構成，上述基板資訊包含上述基板之種類。 Furthermore, the invention of claim 2 is the heat treatment method of claim 1, wherein the film information includes the film type, film thickness and layer configuration of the thin film, and the substrate information includes the type of the substrate.

又，技術方案3之發明係如技術方案1之發明之熱處理方法，其特徵在於進而具備設定並輸入上述膜資訊及上述基板資訊之輸入步驟。 Furthermore, the invention of claim 3 is the heat treatment method of the invention of claim 1, characterized by further comprising an input step of setting and inputting the above-mentioned film information and the above-mentioned substrate information.

又，技術方案4之發明係如技術方案1之發明之熱處理方法，其特徵在於具備：反射率測定步驟，其測定上述基板之反射率；及特定步驟，其基於上述基板之反射率而特定出上述膜資訊。 In addition, the invention of claim 4 is the heat treatment method of the invention of claim 1, characterized by comprising: a reflectance measuring step of measuring the reflectance of the substrate; and a specifying step of specifying based on the reflectance of the substrate Membrane information above.

又，技術方案5之發明係如技術方案1至4中任一項發明之熱處理方法，其特徵在於：於上述輻射率計算步驟中，基於上述輻射溫度計之感度分佈而計算上述基板之輻射率之加權平均值。 Furthermore, the invention of claim 5 is the heat treatment method according to any one of claims 1 to 4, characterized in that in the emissivity calculation step, the emissivity of the substrate is calculated based on the sensitivity distribution of the radiation thermometer. Weighted average.

又，技術方案6之發明係一種熱處理裝置，其特徵在於：該熱處理裝置係藉由對基板照射閃光而加熱該基板者，且具備：腔室，其收容成為處理對象之基板；閃光燈，其對收容在上述腔室內之上述基板照射閃光；輻射溫度計，其測定上述基板之溫度；及輻射率計算部，其基於形成於上述基板上之薄膜相關之膜資訊、上述基板相關之基板資訊、及上述輻射溫度計之設置角度，計算自上述輻射溫度計所觀察到之上述基板之輻射率；將由上述輻射率計算部計算出之上述輻射率設定於上述輻射溫度計，以上述輻射溫度計測定藉由來自上述閃光燈之閃光照射予以加熱後之上述基板之 溫度。 In addition, the invention of claim 6 is a heat treatment apparatus, characterized in that the heat treatment apparatus heats the substrate by irradiating a flash light on the substrate, and includes: a chamber for accommodating the substrate to be processed; and a flash light for The substrate housed in the chamber is irradiated with a flash; a radiation thermometer that measures the temperature of the substrate; and an emissivity calculation section that is based on film information about the thin film formed on the substrate, substrate information about the substrate, and the The installation angle of the radiation thermometer is calculated from the emissivity of the substrate observed by the radiation thermometer; the emissivity calculated by the emissivity calculation part is set in the radiation thermometer, and the radiation thermometer is used to measure the radiation from the flash lamp. The above-mentioned substrate after being heated by flash irradiation temperature.

又，技術方案7之發明係如技術方案6之發明之熱處理裝置，其特徵在於：上述膜資訊包含上述薄膜之膜種類、膜厚及層構成，上述基板資訊包含上述基板之種類。 The invention of claim 7 is the heat treatment apparatus of claim 6, wherein the film information includes the film type, film thickness, and layer configuration of the thin film, and the substrate information includes the type of the substrate.

又，技術方案8之發明係如技術方案6之發明之熱處理裝置，其特徵在於進而具備設定並輸入上述膜資訊及上述基板資訊之輸入部。 Moreover, the invention of Claim 8 is the heat processing apparatus of the invention of Claim 6, It is characterized by further comprising the input part which sets and inputs the said film information and the said board|substrate information.

又，技術方案9之發明係如技術方案6之發明之熱處理裝置，其特徵在於具備：反射率測定部，其測定上述基板之反射率；及特定部，其基於上述基板之反射率而特定出上述膜資訊。 In addition, the invention of claim 9 is the heat treatment apparatus of the invention of claim 6, characterized by comprising: a reflectance measuring unit for measuring the reflectance of the substrate; and a specifying unit for specifying the reflectance based on the reflectance of the substrate Membrane information above.

又，技術方案10之發明係如技術方案6至9中任一項發明之熱處理裝置，其特徵在於：上述輻射率計算部基於上述輻射溫度計之感度分佈而計算上述基板之輻射率之加權平均值。 The invention of claim 10 is the heat treatment apparatus according to any one of the inventions of claim 6 to claim 9, wherein the emissivity calculation unit calculates the weighted average value of the emissivity of the substrate based on the sensitivity distribution of the radiation thermometer .

根據技術方案1至5之發明，基於形成於基板上之薄膜相關之膜資訊、基板相關之基板資訊、及對基板之溫度進行測定之輻射溫度計之設置角度，計算自輻射溫度計所觀察到之基板之輻射率，藉由已被設定該輻射率之輻射溫度計而測定基板之溫度，故而即便形成有多層薄膜亦能夠正確地測定基板之溫度。 According to the inventions of claims 1 to 5, the substrate observed from the radiation thermometer is calculated based on the film information related to the thin film formed on the substrate, the substrate information related to the substrate, and the setting angle of the radiation thermometer that measures the temperature of the substrate. Since the emissivity of the substrate is measured by a radiation thermometer whose emissivity is set, the temperature of the substrate can be accurately measured even if a multilayer thin film is formed.

尤其是，根據技術方案5之發明，基於輻射溫度計之感度分佈而計算基板之輻射率之加權平均值，故而能夠更正確地測定基板之溫度。 In particular, according to the invention of claim 5, the weighted average value of the emissivity of the substrate is calculated based on the sensitivity distribution of the radiation thermometer, so that the temperature of the substrate can be measured more accurately.

根據技術方案6至10之發明，基於形成於基板上之薄膜相關之膜資訊、基板相關之基板資訊、及輻射溫度計之設置角度，計算自輻射溫度計所觀察到之基板之輻射率，藉由已被設定該輻射率之輻射溫度計來測定基板之溫度，故而即便形成有多層薄膜亦能夠正確地測定基板之溫度。 According to the inventions of claims 6 to 10, based on the film information related to the thin film formed on the substrate, the substrate information related to the substrate, and the setting angle of the radiation thermometer, the emissivity of the substrate observed from the radiation thermometer is calculated. The temperature of the substrate is measured by the radiation thermometer set to this emissivity, so even if a multilayer thin film is formed, the temperature of the substrate can be accurately measured.

尤其是，根據技術方案10之發明，基於輻射溫度計之感度分佈而計算基板之輻射率之加權平均值，故而能夠更正確地測定基板之溫度。 In particular, according to the invention of claim 10, the weighted average value of the emissivity of the substrate is calculated based on the sensitivity distribution of the radiation thermometer, so that the temperature of the substrate can be measured more accurately.

3:控制部 3: Control Department

4:鹵素燈室 4: Halogen lamp room

5:閃光燈室 5: Flash Room

6:處理腔室 6: Processing chamber

7:保持部 7: Keeping Department

10:移載機構 10: Transfer mechanism

11:移載臂 11: Transfer arm

12:頂起銷 12: Jack up pins

13:水平移動機構 13: Horizontal movement mechanism

14:升降機構 14: Lifting mechanism

20:下部輻射溫度計 20: Lower radiation thermometer

21:透明窗 21: Transparent window

24:紅外線感測器 24: Infrared sensor

25:上部輻射溫度計 25: Upper radiation thermometer

26:透明窗 26: Transparent window

29:紅外線感測器 29: Infrared sensor

31:反射率計算部 31: Reflectance calculation section

32:輻射率計算部 32: Emissivity calculation department

33:輸入部 33: Input part

34:顯示部 34: Display part

35:磁碟 35: Disk

36:特定部 36: specific department

39:溫度預測部 39: Temperature Prediction Department

41:殼體 41: Shell

43:反射器 43: Reflector

51:殼體 51: Shell

52:反射器 52: Reflector

53:燈光放射窗 53: Light emission window

61:腔室側部 61: Chamber side

61a:貫通孔 61a: Through hole

61b:貫通孔 61b: Through hole

62:凹部 62: Recess

63:上側腔室窗 63: Upper side chamber window

64:下側腔室窗 64: Lower side chamber window

65:熱處理空間 65: Heat treatment space

66:搬送開口部(爐口) 66: Conveyance opening (furnace mouth)

68:反射環 68: Reflection Ring

69:反射環 69: Reflection Ring

71:基台環 71: Abutment ring

72:連結部 72: Links

74:基座 74: Pedestal

75:保持板 75: Hold Plate

75a:保持面 75a: Keep Face

76:導向環 76: Guide ring

77:基板支持銷 77: Substrate support pins

78:開口部 78: Opening

79:貫通孔 79: Through hole

81:氣體供給孔 81: Gas supply hole

82:緩衝空間 82: Buffer space

83:氣體供給管 83: Gas supply pipe

84:閥 84: Valve

85:處理氣體供給源 85: Process gas supply source

86:氣體排出孔 86: Gas discharge hole

87:緩衝空間 87: Buffer space

88:氣體排出管 88: Gas discharge pipe

89:閥 89: Valve

100:熱處理裝置 100: Heat treatment device

101:移載傳送部 101: Transfer and transfer department

110:裝載口 110: Loading port

120:交接機器人 120: Handover Robot

121:手部 121: Hands

130:冷卻部 130: Cooling Department

131:第1冷卻腔室 131: 1st cooling chamber

140:冷卻部 140: Cooling Department

141:第2冷卻腔室 141: 2nd cooling chamber

150:搬送機器人 150: Transfer Robot

151a:搬送手 151a: Carrier

151b:搬送手 151b: Carrier

160:熱處理部 160: Heat Treatment Department

170:搬送腔室 170: Transfer Chamber

181:閘閥 181: Gate valve

182:閘閥 182: Gate valve

183:閘閥 183: Gate valve

184:閘閥 184: Gate valve

185:閘閥 185: Gate valve

190:排氣機構 190: Exhaust mechanism

191:氣體排出管 191: Gas discharge pipe

192:閥 192: Valve

230:對準部 230: Alignment Department

231:對準腔室 231: Alignment Chamber

232:反射率測定部 232: Reflectance Measurement Section

235:受光部 235: Light Receiver

236:半反射鏡 236: Half mirror

237:旋轉支持部 237: Rotation support

238:旋轉馬達 238: Rotary Motor

300:投光部 300: Projection part

C:載具 C: vehicle

DB:資料庫 DB:Database

FL:閃光燈 FL: Flash

HL:鹵素燈 HL: halogen lamp

W:半導體晶圓 W: semiconductor wafer

圖1係表示本發明之熱處理裝置之俯視圖。 FIG. 1 is a plan view showing a heat treatment apparatus of the present invention.

圖2係圖1之熱處理裝置之前視圖。 FIG. 2 is a front view of the heat treatment apparatus of FIG. 1 .

圖3係表示熱處理部之構成之縱剖視圖。 Fig. 3 is a longitudinal sectional view showing the structure of the heat treatment section.

圖4係表示保持部之整體外觀之立體圖。 FIG. 4 is a perspective view showing the overall appearance of the holding portion.

圖5係基座之俯視圖。 Figure 5 is a top view of the base.

圖6係基座之剖視圖。 Figure 6 is a cross-sectional view of the base.

圖7係移載機構之俯視圖。 FIG. 7 is a top view of the transfer mechanism.

圖8係移載機構之側視圖。 Figure 8 is a side view of the transfer mechanism.

圖9係表示複數個鹵素燈之配置之俯視圖。 FIG. 9 is a plan view showing an arrangement of a plurality of halogen lamps.

圖10係表示反射率測定部及控制部之構成之圖。 FIG. 10 is a diagram showing the configuration of a reflectance measurement unit and a control unit.

圖11係表示第1實施方式之溫度測定順序之流程圖。 FIG. 11 is a flowchart showing a temperature measurement procedure in the first embodiment.

圖12係表示資訊輸入畫面之一例之圖。 FIG. 12 is a diagram showing an example of an information input screen.

圖13係表示半導體晶圓之光譜輻射率之一例之圖。 FIG. 13 is a diagram showing an example of the spectral emissivity of a semiconductor wafer.

圖14係表示上部輻射溫度計之感度分佈之圖。 Fig. 14 is a graph showing the sensitivity distribution of the upper radiation thermometer.

圖15係表示修正後之半導體晶圓之光譜輻射率之圖。 FIG. 15 is a graph showing the spectral radiance of the semiconductor wafer after correction.

圖16係表示第2實施方式之溫度測定順序之流程圖。 FIG. 16 is a flowchart showing a temperature measurement procedure in the second embodiment.

以下，一面參照圖式一面對本發明之實施方式詳細地進行說明。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<第1實施方式> <First Embodiment>

首先，對本發明之熱處理裝置之整體構成進行說明。圖1係表示本發明之熱處理裝置100之俯視圖，圖2係其前視圖。熱處理裝置100係對作為基板之圓板形狀之半導體晶圓W照射閃光而加熱該半導體晶圓W之閃光燈退火裝置。成為處理對象之半導體晶圓W之尺寸並無特別限定，例如為

Figure 109121249-A0305-02-0008-1
300mm或
Figure 109121249-A0305-02-0008-2
450mm。再者，於圖1及以下各圖中，為了容易理解，而視需要誇張或簡化各部之尺寸或數量來進行繪製。又，於圖1~圖3各圖中，為了明確其等之方向關係，而標註了將Z軸方向設為鉛直方向，將XY平面設為水平面之XYZ正交座標系統。 First, the overall configuration of the heat treatment apparatus of the present invention will be described. FIG. 1 is a plan view showing a heat treatment apparatus 100 of the present invention, and FIG. 2 is a front view thereof. The heat treatment apparatus 100 is a flash lamp annealing apparatus that heats the semiconductor wafer W by irradiating a flash light to the semiconductor wafer W in the shape of a disk as a substrate. The size of the semiconductor wafer W to be processed is not particularly limited, for example,
Figure 109121249-A0305-02-0008-1
300mm or
Figure 109121249-A0305-02-0008-2
450mm. In addition, in FIG. 1 and the following figures, in order to understand easily, the size and number of each part are exaggerated or simplified as needed and drawn. 1 to 3, in order to clarify the directional relationship of the same, the XYZ orthogonal coordinate system in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane is indicated.

如圖1及圖2所示，熱處理裝置100具有：移載傳送部101，其用以將未處理之半導體晶圓W自外部搬入至裝置內，並且將處理完畢之半導體晶圓W搬出至裝置外；對準部230，其進行未處理之半導體晶圓W之定位；2 個冷卻部130、140，其等進行加熱處理後之半導體晶圓W之冷卻；熱處理部160，其對半導體晶圓W實施閃光加熱處理；及搬送機器人150，其相對於冷卻部130、140及熱處理部160進行半導體晶圓W之交接。又，熱處理裝置100具備控制部3，該控制部3對設置在上述各處理部之動作機構及搬送機器人150進行控制，推進半導體晶圓W之閃光加熱處理。 As shown in FIG. 1 and FIG. 2 , the thermal processing apparatus 100 includes a transfer and transfer unit 101 for carrying unprocessed semiconductor wafers W into the apparatus from the outside, and carrying out the processed semiconductor wafers W to the apparatus. outside; the alignment section 230, which performs the positioning of the unprocessed semiconductor wafer W; 2 A cooling unit 130, 140, which performs cooling of the semiconductor wafer W after the heat treatment; a heat treatment unit 160, which performs a flash heating process on the semiconductor wafer W; The heat treatment unit 160 performs handover of the semiconductor wafer W. Furthermore, the heat treatment apparatus 100 includes a control unit 3 that controls the operation mechanism and the transfer robot 150 provided in each of the above-described treatment units, and promotes the flash heat treatment of the semiconductor wafer W.

移載傳送部101具有：裝載口110，其排列載置複數個載具C(於本實施方式中為2個)；及交接機器人120，其自各載具C取出未處理之半導體晶圓W，並且將處理完畢之半導體晶圓W收納於各載具C。收容有未處理之半導體晶圓W之載具C由無人搬送車(AGV(Automatic Guided Vehicle，自動導引搬送車)、OHT(Overhead Hoist Transport，高架提昇搬送車))等搬送並載置於裝載口110，並且收容有處理完畢之半導體晶圓W之載具C由無人搬送車自裝載口110運走。 The transfer and transfer unit 101 includes: a loading port 110 for arranging and placing a plurality of carriers C (two in this embodiment); And the processed semiconductor wafer W is accommodated in each carrier C. As shown in FIG. The carrier C containing the unprocessed semiconductor wafers W is transported by an unmanned transport vehicle (AGV (Automatic Guided Vehicle), OHT (Overhead Hoist Transport, overhead lift transport vehicle)), etc. and placed on the loading port 110 , and the carrier C containing the processed semiconductor wafers W is transported away from the loading port 110 by an unmanned transport vehicle.

又，於裝載口110中，載具C構成為能夠如圖2之箭頭CU所示般升降移動，以使交接機器人120能夠相對於載具C將任意半導體晶圓W取出或放入。再者，作為載具C之形態，除了將半導體晶圓W收納於密閉空間內之FOUP(front opening unified pod，前開式晶圓盒)以外，亦可為SMIF(Standard Mechanical Inter Face，標準機械界面)盒或將所收納之半導體晶圓W暴露於外部大氣中之OC(open cassette，開放式晶圓匣)。 In addition, in the load port 110 , the carrier C is configured to be able to move up and down as indicated by the arrow CU in FIG. Furthermore, as the form of the carrier C, in addition to a FOUP (front opening unified pod) that accommodates the semiconductor wafer W in a closed space, it can also be a SMIF (Standard Mechanical Inter Face, a standard mechanical interface) ) cassette or an OC (open cassette) that exposes the contained semiconductor wafer W to the outside atmosphere.

又，交接機器人120能夠進行如圖1之箭頭120S所示之滑行移動、如箭頭120R所示之回轉動作及升降動作。藉此，交接機器人120相對於2個 載具C將半導體晶圓W取出或放入，並且相對於對準部230及2個冷卻部130、140交接半導體晶圓W。藉由交接機器人120進行之相對於載具C之半導體晶圓W之取出或放入係藉由手部121之滑行移動、及載具C之升降移動而進行。又，交接機器人120與對準部230或冷卻部130、140之半導體晶圓W之交接係藉由手部121之滑行移動、及交接機器人120之升降動作而進行。 In addition, the handover robot 120 can perform a sliding movement as shown by an arrow 120S in FIG. 1 , a turning operation as shown by an arrow 120R, and a lifting and lowering operation. Thereby, the handover robot 120 can The carrier C takes out or puts in the semiconductor wafer W, and transfers the semiconductor wafer W to the alignment unit 230 and the two cooling units 130 and 140 . The taking-out or putting-in of the semiconductor wafer W relative to the carrier C by the handover robot 120 is performed by the sliding movement of the hand 121 and the lifting and lowering movement of the carrier C. FIG. In addition, the handover robot 120 transfers the semiconductor wafers W in the alignment unit 230 or the cooling units 130 and 140 by the sliding movement of the hand 121 and the lifting and lowering motion of the transfer robot 120 .

對準部230連接於沿著Y軸方向之移載傳送部101之側方而設置。對準部230係使半導體晶圓W在水平面內旋轉而朝向適合閃光加熱之方向之處理部。對準部230係於作為鋁合金製殼體之對準腔室231之內部，設置有將半導體晶圓W支持為水平姿勢並使其旋轉之機構(圖10之旋轉支持部237、旋轉馬達238)、及光學地檢測在半導體晶圓W之周緣部所形成之凹口或定向平面等之機構等而構成。又，於對準腔室231中設置有對支持在其內部之半導體晶圓W之正面之反射率進行測定之反射率測定部232。反射率測定部232對半導體晶圓W之正面照射光，並且接收由該正面反射之反射光，根據該反射光之強度測定半導體晶圓W之正面反射率。 The alignment part 230 is connected to the side of the transfer conveying part 101 along the Y-axis direction, and is provided. The alignment portion 230 is a processing portion that rotates the semiconductor wafer W in a horizontal plane to a direction suitable for flash heating. The alignment portion 230 is provided in the alignment chamber 231 which is an aluminum alloy casing, and is provided with a mechanism for supporting the semiconductor wafer W in a horizontal position and rotating it (the rotation supporting portion 237 and the rotation motor 238 in FIG. 10 ). ), and a mechanism for optically detecting a notch or an orientation plane formed in the peripheral portion of the semiconductor wafer W, etc. Moreover, the reflectance measurement part 232 which measures the reflectance of the front surface of the semiconductor wafer W supported in the alignment chamber 231 is provided. The reflectance measuring unit 232 irradiates the front surface of the semiconductor wafer W with light, receives the reflected light reflected by the front surface, and measures the front surface reflectance of the semiconductor wafer W based on the intensity of the reflected light.

相對於對準部230之半導體晶圓W之交接係藉由交接機器人120而進行。自交接機器人120向對準腔室231係以晶圓中心位於規定位置之方式遞交半導體晶圓W。於對準部230中，係以如下方式來調整半導體晶圓W之朝向：以自移載傳送部101接收到之半導體晶圓W之中心部作為旋轉中心，使半導體晶圓W繞鉛直方向軸旋轉，並光學地檢測凹口等。又，反射率測定部232測定半導體晶圓W之正面反射率。方向調整結束後之半導體 晶圓W係藉由交接機器人120自對準腔室231取出。 The handover of the semiconductor wafer W with respect to the alignment portion 230 is performed by the handover robot 120 . The semiconductor wafer W is delivered from the handover robot 120 to the alignment chamber 231 in such a manner that the wafer center is located at a predetermined position. In the alignment unit 230, the orientation of the semiconductor wafer W is adjusted in such a manner that the center of the semiconductor wafer W received from the transfer unit 101 is used as the center of rotation, and the semiconductor wafer W is rotated around the vertical axis. Rotate, and optically detect notches etc. In addition, the reflectance measuring unit 232 measures the front reflectance of the semiconductor wafer W. As shown in FIG. Semiconductor after orientation adjustment The wafer W is taken out from the alignment chamber 231 by the handover robot 120 .

作為供搬送機器人150所用之半導體晶圓W之搬送空間，設置有收容搬送機器人150之搬送腔室170。於該搬送腔室170之三個方位連通連接有熱處理部160之處理腔室6、冷卻部130之第1冷卻腔室131及冷卻部140之第2冷卻腔室141。 A transfer chamber 170 for accommodating the transfer robot 150 is provided as a transfer space for the semiconductor wafer W used by the transfer robot 150 . The processing chamber 6 of the heat treatment unit 160 , the first cooling chamber 131 of the cooling unit 130 , and the second cooling chamber 141 of the cooling unit 140 are communicated and connected to three directions of the transfer chamber 170 .

作為熱處理裝置100之主要部分之熱處理部160係對進行了預加熱之半導體晶圓W照射來自氙氣閃光燈FL之閃光(flash light)而進行閃光加熱處理之基板處理部。關於該熱處理部160之構成，將於下文進一步說明。 The heat treatment unit 160 , which is a main part of the heat treatment apparatus 100 , is a substrate treatment unit that performs flash heat treatment by irradiating the preheated semiconductor wafer W with a flash light from a xenon flash lamp FL. The configuration of the heat treatment portion 160 will be further described below.

2個冷卻部130、140具有大致相同之構成。冷卻部130、140分別於作為鋁合金製殼體之第1冷卻腔室131、第2冷卻腔室141之內部具備金屬製冷卻板、及載置在其上表面之石英板(均省略圖示)。該冷卻板係藉由珀爾帖元件或恆溫水循環而調節至常溫(約23℃)。將經熱處理部160實施了閃光加熱處理之半導體晶圓W搬入至第1冷卻腔室131或第2冷卻腔室141，並載置於該石英板上加以冷卻。 The two cooling parts 130 and 140 have substantially the same configuration. The cooling parts 130 and 140 are respectively provided with a metal cooling plate and a quartz plate placed on the upper surface of the first cooling chamber 131 and the second cooling chamber 141 which are aluminum alloy casings (both not shown in the figure). ). The cooling plate is adjusted to normal temperature (about 23° C.) by a Peltier element or constant temperature water circulation. The semiconductor wafer W subjected to the flash heat treatment by the heat treatment unit 160 is carried into the first cooling chamber 131 or the second cooling chamber 141, and placed on the quartz plate to be cooled.

第1冷卻腔室131及第2冷卻腔室141均位於移載傳送部101與搬送腔室170之間，且連接於其等兩者。於第1冷卻腔室131及第2冷卻腔室141中，形成設置有用以將半導體晶圓W搬入搬出之2個開口。第1冷卻腔室131之2個開口中連接於移載傳送部101之開口能夠藉由閘閥181進行開閉。另一方面，第1冷卻腔室131之連接於搬送腔室170之開口能夠藉由閘 閥183進行開閉。即，第1冷卻腔室131與移載傳送部101經由閘閥181連接，第1冷卻腔室131與搬送腔室170經由閘閥183連接。 The 1st cooling chamber 131 and the 2nd cooling chamber 141 are located between the transfer conveyance part 101 and the conveyance chamber 170, and are connected to both of them. In the first cooling chamber 131 and the second cooling chamber 141 , two openings for carrying the semiconductor wafer W in and out are formed. Among the two openings of the first cooling chamber 131 , the opening connected to the transfer conveyor 101 can be opened and closed by the gate valve 181 . On the other hand, the opening of the first cooling chamber 131 connected to the transfer chamber 170 can be closed by a gate The valve 183 is opened and closed. That is, the 1st cooling chamber 131 and the transfer conveyance part 101 are connected via the gate valve 181, and the 1st cooling chamber 131 and the conveyance chamber 170 are connected via the gate valve 183.

於移載傳送部101與第1冷卻腔室131之間進行半導體晶圓W之交接時，開啟閘閥181。又，於第1冷卻腔室131與搬送腔室170之間進行半導體晶圓W之交接時，開啟閘閥183。於閘閥181及閘閥183關閉時，第1冷卻腔室131之內部成為密閉空間。 The gate valve 181 is opened when the semiconductor wafer W is delivered between the transfer unit 101 and the first cooling chamber 131 . In addition, when the semiconductor wafer W is transferred between the first cooling chamber 131 and the transfer chamber 170 , the gate valve 183 is opened. When the gate valve 181 and the gate valve 183 are closed, the inside of the first cooling chamber 131 becomes a closed space.

又，第2冷卻腔室141之2個開口中連接於移載傳送部101之開口能夠藉由閘閥182進行開閉。另一方面，第2冷卻腔室141之連接於搬送腔室170之開口能夠藉由閘閥184進行開閉。即，第2冷卻腔室141與移載傳送部101經由閘閥182連接，第2冷卻腔室141與搬送腔室170經由閘閥184連接。 In addition, among the two openings of the second cooling chamber 141 , the opening connected to the transfer conveyor 101 can be opened and closed by the gate valve 182 . On the other hand, the opening connected to the transfer chamber 170 of the second cooling chamber 141 can be opened and closed by the gate valve 184 . That is, the second cooling chamber 141 and the transfer unit 101 are connected via the gate valve 182 , and the second cooling chamber 141 and the transfer chamber 170 are connected via the gate valve 184 .

於移載傳送部101與第2冷卻腔室141之間進行半導體晶圓W之交接時，開啟閘閥182。又，於第2冷卻腔室141與搬送腔室170之間進行半導體晶圓W之交接時，開啟閘閥184。於閘閥182及閘閥184關閉時，第2冷卻腔室141之內部成為密閉空間。 The gate valve 182 is opened when the semiconductor wafer W is transferred between the transfer unit 101 and the second cooling chamber 141 . In addition, when the semiconductor wafer W is transferred between the second cooling chamber 141 and the transfer chamber 170 , the gate valve 184 is opened. When the gate valve 182 and the gate valve 184 are closed, the inside of the second cooling chamber 141 becomes a closed space.

進而，冷卻部130、140分別具有向第1冷卻腔室131、第2冷卻腔室141供給乾淨之氮氣之氣體供給機構與排出腔室內之環境氣體之排氣機構。該等氣體供給機構及排氣機構亦可設為能夠將流量分為2個等級加以切換。 Furthermore, the cooling parts 130 and 140 respectively have a gas supply mechanism for supplying clean nitrogen gas to the first cooling chamber 131 and the second cooling chamber 141 and an exhaust mechanism for exhausting the ambient gas in the chamber. The gas supply mechanism and the exhaust mechanism may be switched by dividing the flow rate into two levels.

設置於搬送腔室170內之搬送機器人150能夠以沿著鉛直方向之軸作為中心而如箭頭150R所示般回轉。搬送機器人150具有由複數個臂節所構成之2個連桿機構，於這2個連桿機構之前端分別設置有保持半導體晶圓W之搬送手151a、151b。該等搬送手151a、151b上下隔開規定間距而配置，且能夠藉由連桿機構分別獨立地沿同一水平方向直線地滑行移動。又，搬送機器人150藉由使供設置2個連桿機構之底座升降移動，而使2個搬送手151a、151b以隔開規定間距之狀態升降移動。 The transfer robot 150 installed in the transfer chamber 170 can rotate as indicated by the arrow 150R with the axis along the vertical direction as the center. The transfer robot 150 has two link mechanisms composed of a plurality of arm segments, and transfer hands 151 a and 151 b that hold the semiconductor wafers W are provided at the front ends of the two link mechanisms, respectively. These conveyance hands 151a and 151b are arrange|positioned at predetermined intervals up and down, and can slide and move linearly in the same horizontal direction independently by a link mechanism, respectively. Moreover, the conveyance robot 150 raises and lowers the two conveyance hands 151a and 151b in the state spaced apart by a predetermined distance by raising and lowering the base on which the two link mechanisms are installed.

於搬送機器人150將第1冷卻腔室131、第2冷卻腔室141或熱處理部160之處理腔室6作為交接對方進行半導體晶圓W之交接(取出或放入)時，首先，兩個搬送手151a、151b以與交接對方對向之方式回轉，然後(或者在回轉期間內)升降移動，其中任意一個搬送手位於與交接對方交接半導體晶圓W之高度。然後，使搬送手151a(151b)沿水平方向直線地滑行移動而與交接對方進行半導體晶圓W之交接。 When the transfer robot 150 uses the first cooling chamber 131, the second cooling chamber 141, or the processing chamber 6 of the heat treatment section 160 as a transfer partner to transfer (take out or put in) the semiconductor wafer W, first, two transfers are performed. The hands 151a and 151b are rotated so as to face the transfer partner, and then (or during the rotation period) move up and down, and any one of the transfer hands is located at the height to transfer the semiconductor wafer W to the transfer partner. Then, the transfer hand 151a (151b) is linearly slid in the horizontal direction to transfer the semiconductor wafer W to the transfer partner.

搬送機器人150與交接機器人120之半導體晶圓W之交接能夠經由冷卻部130、140進行。即，冷卻部130之第1冷卻腔室131與冷卻部140之第2冷卻腔室141亦作為用以在搬送機器人150與交接機器人120之間交接半導體晶圓W之路徑發揮功能。具體而言，藉由由搬送機器人150或交接機器人120其中一方遞交至第1冷卻腔室131或第2冷卻腔室141之半導體晶圓W由另一方接收來進行半導體晶圓W之交接。由搬送機器人150及交接機器人120構成將半導體晶圓W自載具C搬送至熱處理部160之搬送機構。 The transfer of the semiconductor wafers W between the transfer robot 150 and the transfer robot 120 can be performed via the cooling units 130 and 140 . That is, the first cooling chamber 131 of the cooling unit 130 and the second cooling chamber 141 of the cooling unit 140 also function as paths for transferring the semiconductor wafer W between the transfer robot 150 and the transfer robot 120 . Specifically, the semiconductor wafer W is delivered to the first cooling chamber 131 or the second cooling chamber 141 by one of the transfer robot 150 or the transfer robot 120 and is received by the other to transfer the semiconductor wafer W. The transfer robot 150 and the transfer robot 120 constitute a transfer mechanism that transfers the semiconductor wafer W from the carrier C to the heat treatment unit 160 .

如上所述，於第1冷卻腔室131及第2冷卻腔室141與移載傳送部101之間分別設置有閘閥181、182。又，於搬送腔室170與第1冷卻腔室131及第2冷卻腔室141之間分別設置有閘閥183、184。進而，於搬送腔室170與熱處理部160之處理腔室6之間設置有閘閥185。於熱處理裝置100內搬送半導體晶圓W時，適當地開閉該等閘閥。又，亦自氣體供給部對搬送腔室170及對準腔室231供給氮氣，並且藉由排氣部將其等內部之環境氣體排出(均省略圖示)。 As described above, the gate valves 181 and 182 are respectively provided between the first cooling chamber 131 and the second cooling chamber 141 and the transfer unit 101 . Furthermore, gate valves 183 and 184 are provided between the transfer chamber 170 and the first cooling chamber 131 and the second cooling chamber 141, respectively. Furthermore, a gate valve 185 is provided between the transfer chamber 170 and the processing chamber 6 of the thermal processing unit 160 . These gate valves are appropriately opened and closed when the semiconductor wafer W is transferred in the heat treatment apparatus 100 . In addition, nitrogen gas is also supplied to the transfer chamber 170 and the alignment chamber 231 from the gas supply part, and the ambient gas inside them is exhausted by the exhaust part (both not shown).

其次，對熱處理部160之構成進行說明。圖3係表示熱處理部160之構成之縱剖視圖。熱處理部160具備：收容半導體晶圓W並進行加熱處理之處理腔室6、內置複數個閃光燈FL之閃光燈室5、及內置複數個鹵素燈HL之鹵素燈室4。於處理腔室6之上側設置閃光燈室5，並且於下側設置鹵素燈室4。又，熱處理部160於處理腔室6之內部具備：將半導體晶圓W保持為水平姿勢之保持部7、及在保持部7與搬送機器人150之間進行半導體晶圓W之交接之移載機構10。 Next, the configuration of the heat treatment unit 160 will be described. FIG. 3 is a vertical cross-sectional view showing the configuration of the heat treatment section 160 . The thermal processing unit 160 includes a processing chamber 6 for accommodating the semiconductor wafer W and heat-processing, a flash chamber 5 containing a plurality of flash lamps FL, and a halogen lamp chamber 4 containing a plurality of halogen lamps HL. A flash lamp chamber 5 is provided on the upper side of the processing chamber 6, and a halogen lamp chamber 4 is provided on the lower side. Furthermore, the thermal processing unit 160 includes, inside the processing chamber 6 : a holding unit 7 for holding the semiconductor wafer W in a horizontal posture, and a transfer mechanism for transferring the semiconductor wafer W between the holding unit 7 and the transfer robot 150 . 10.

處理腔室6係於筒狀之腔室側部61之上下安裝石英製腔室窗而構成。腔室側部61具有上下開口之大致筒形狀，其上側開口被安裝上側腔室窗63而封閉，其下側開口被安裝下側腔室窗64而封閉。構成處理腔室6之頂部之上側腔室窗63係由石英所形成之圓板形狀構件，作為使自閃光燈FL射出之閃光透射至處理腔室6內之石英窗發揮功能。又，構成處理腔室6之底部之下側腔室窗64亦為由石英所形成之圓板形狀構件，作為使來自鹵素 燈HL之光透射至處理腔室6內之石英窗發揮功能。 The processing chamber 6 is constituted by attaching quartz-made chamber windows to the upper and lower sides of the cylindrical chamber side portion 61 . The chamber side portion 61 has a substantially cylindrical shape with upper and lower openings, and the upper opening is closed by attaching the upper chamber window 63 , and the lower opening is closed by attaching the lower chamber window 64 . The upper-side chamber window 63 constituting the top of the processing chamber 6 is a disc-shaped member formed of quartz, and functions as a quartz window for transmitting the flash light emitted from the flash lamp FL into the processing chamber 6 . In addition, the chamber window 64 on the lower side constituting the bottom of the processing chamber 6 is also a disc-shaped member formed of quartz, which serves as a The light from the lamp HL is transmitted to the quartz window in the processing chamber 6 to function.

又，於腔室側部61之內側之壁面之上部安裝有反射環68，於下部安裝有反射環69。反射環68、69均形成為圓環狀。上側之反射環68係藉由自腔室側部61之上側嵌入而安裝。另一方面，下側之反射環69係藉由自腔室側部61之下側嵌入並利用省略圖示之螺釘加以固定而安裝。即，反射環68、69均裝卸自如地安裝於腔室側部61。將處理腔室6之內側空間、即由上側腔室窗63、下側腔室窗64、腔室側部61及反射環68、69所包圍之空間規定為熱處理空間65。 Moreover, the reflection ring 68 is attached to the upper part of the wall surface inside the chamber side part 61, and the reflection ring 69 is attached to the lower part. Both the reflection rings 68 and 69 are formed in annular shapes. The reflection ring 68 on the upper side is installed by being inserted from the upper side of the chamber side portion 61 . On the other hand, the reflection ring 69 on the lower side is installed by being inserted from the lower side of the chamber side portion 61 and fixed with screws (not shown). That is, the reflection rings 68 and 69 are both detachably attached to the chamber side portion 61 . The inner space of the processing chamber 6 , that is, the space surrounded by the upper chamber window 63 , the lower chamber window 64 , the chamber side portion 61 , and the reflection rings 68 and 69 is defined as a heat processing space 65 .

藉由在腔室側部61安裝反射環68、69，而在處理腔室6之內壁面形成有凹部62。即，形成有由腔室側部61之內壁面中未安裝反射環68、69之中央部分、反射環68之下端面、反射環69之上端面所包圍之凹部62。凹部62於處理腔室6之內壁面沿著水平方向形成為圓環狀，且圍繞保持半導體晶圓W之保持部7。腔室側部61及反射環68、69由強度與耐熱性優異之金屬材料(例如不鏽鋼)所形成。 Recesses 62 are formed on the inner wall surface of the processing chamber 6 by attaching the reflection rings 68 and 69 to the chamber side portion 61 . That is, a concave portion 62 surrounded by a central portion of the inner wall surface of the chamber side portion 61 where the reflection rings 68 and 69 are not attached, a lower end surface of the reflection ring 68 , and an upper end surface of the reflection ring 69 is formed. The concave portion 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the processing chamber 6 , and surrounds the holding portion 7 holding the semiconductor wafer W. As shown in FIG. The chamber side portion 61 and the reflection rings 68 and 69 are formed of a metal material (eg, stainless steel) excellent in strength and heat resistance.

又，於腔室側部61形成設置有用以對處理腔室6進行半導體晶圓W之搬入及搬出之搬送開口部(爐口)66。搬送開口部66設為能夠由閘閥185予以開閉。搬送開口部66連通連接於凹部62之外周面。因此，於閘閥185開啟搬送開口部66時，能夠自搬送開口部66通過凹部62向熱處理空間65搬入半導體晶圓W及自熱處理空間65搬出半導體晶圓W。又，當閘閥185關閉搬送開口部66時，處理腔室6內之熱處理空間65成為密閉空間。 In addition, the chamber side portion 61 is provided with a transfer opening (furnace port) 66 for carrying in and out of the processing chamber 6 semiconductor wafers W. As shown in FIG. The conveyance opening 66 can be opened and closed by the gate valve 185 . The conveyance opening portion 66 is communicated and connected to the outer peripheral surface of the recessed portion 62 . Therefore, when the gate valve 185 opens the transfer opening 66 , the semiconductor wafer W can be transferred from the transfer opening 66 to the heat treatment space 65 through the recess 62 and can be transferred out of the heat treatment space 65 . In addition, when the gate valve 185 closes the transfer opening 66, the heat treatment space 65 in the processing chamber 6 becomes a closed space.

進而，於腔室側部61貫穿設置有貫通孔61a及貫通孔61b。貫通孔61a係圓筒狀之孔，用以將自保持在下述基座74上之半導體晶圓W之上表面放射之紅外光導向上部輻射溫度計25之紅外線感測器29。另一方面，貫通孔61b係圓筒狀之孔，用以將自半導體晶圓W之下表面放射之紅外光導向下部輻射溫度計20之紅外線感測器24。貫通孔61a及貫通孔61b係以其等之貫通方向之軸與保持於基座74上之半導體晶圓W之主面相交之方式，相對於水平方向傾斜地設置。於貫通孔61a之面向熱處理空間65之側之端部安裝有透明窗26，該透明窗26由使上部輻射溫度計25可測定之波長區域之紅外光透過之氟化鈣材料構成。又，於貫通孔61b之面向熱處理空間65之側之端部安裝有透明窗21，該透明窗21由使下部輻射溫度計20可測定之波長區域之紅外光透過之氟化鋇材料構成。 Further, through-holes 61 a and through-holes 61 b are provided through the chamber side portion 61 . The through hole 61 a is a cylindrical hole for guiding infrared light emitted from the upper surface of the semiconductor wafer W held on the susceptor 74 described below to the infrared sensor 29 of the upper radiation thermometer 25 . On the other hand, the through hole 61 b is a cylindrical hole for guiding the infrared light emitted from the lower surface of the semiconductor wafer W to the infrared sensor 24 of the lower radiation thermometer 20 . The through-hole 61a and the through-hole 61b are provided inclined with respect to the horizontal direction so that the axis of the through-hole 61a and the through-hole 61b intersect with the main surface of the semiconductor wafer W held on the susceptor 74 . A transparent window 26 is attached to the end of the through hole 61a on the side facing the heat treatment space 65. The transparent window 26 is made of a calcium fluoride material that transmits infrared light in a wavelength region that can be measured by the upper radiation thermometer 25. In addition, a transparent window 21 is attached to the end of the through hole 61b on the side facing the heat treatment space 65. The transparent window 21 is made of a barium fluoride material that transmits infrared light in a wavelength region that can be measured by the lower radiation thermometer 20.

又，於處理腔室6之內壁上部形成設置有對熱處理空間65供給處理氣體之氣體供給孔81。氣體供給孔81形成設置於較凹部62更靠上側位置，亦可設置於反射環68。氣體供給孔81經由在處理腔室6之側壁內部形成為圓環狀之緩衝空間82而連通連接於氣體供給管83。氣體供給管83連接於處理氣體供給源85。又，於氣體供給管83之路徑中途介插有閥84。當閥84開啟時，將處理氣體自處理氣體供給源85向緩衝空間82輸送供給。流入至緩衝空間82之處理氣體以在流體阻力小於氣體供給孔81之緩衝空間82內擴散之方式流動，而自氣體供給孔81向熱處理空間65內供給。作為處理氣體，可使用氮(N2)等惰性氣體、或氫(H2)、氨(NH3)等反應性氣體(於本實施方式中為氮)。 In addition, a gas supply hole 81 for supplying a process gas to the heat treatment space 65 is formed in the upper part of the inner wall of the process chamber 6 . The gas supply hole 81 is formed at an upper position than the concave portion 62 , and may also be provided in the reflection ring 68 . The gas supply hole 81 is communicated and connected to the gas supply pipe 83 through a buffer space 82 formed in an annular shape inside the side wall of the processing chamber 6 . The gas supply pipe 83 is connected to the process gas supply source 85 . In addition, a valve 84 is interposed in the middle of the path of the gas supply pipe 83 . When the valve 84 is opened, the process gas is supplied from the process gas supply source 85 to the buffer space 82 . The process gas flowing into the buffer space 82 flows so as to diffuse in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 , and is supplied from the gas supply hole 81 into the heat treatment space 65 . As the processing gas, an inert gas such as nitrogen (N 2 ), or a reactive gas such as hydrogen (H 2 ) or ammonia (NH 3 ) (nitrogen in the present embodiment) can be used.

另一方面，於處理腔室6之內壁下部形成設置有排出熱處理空間65內之氣體之氣體排出孔86。氣體排出孔86形成設置於較凹部62更靠下側位置，亦可設置於反射環69。氣體排出孔86經由在處理腔室6之側壁內部形成為圓環狀之緩衝空間87而連通連接於氣體排出管88。氣體排出管88連接於排氣機構190。又，於氣體排出管88之路徑中途介插有閥89。當閥89開啟時，將熱處理空間65之氣體自氣體排出孔86經過緩衝空間87向氣體排出管88排出。再者，氣體供給孔81及氣體排出孔86可沿著處理腔室6之周向設置有複數個，亦可為狹縫狀。又，處理氣體供給源85及排氣機構190可為設置於熱處理裝置100之機構，亦可為供設置熱處理裝置100之工廠之公用設備。 On the other hand, a gas discharge hole 86 for discharging the gas in the heat treatment space 65 is formed in the lower part of the inner wall of the processing chamber 6 . The gas discharge hole 86 is formed at a position lower than the concave portion 62 , and may also be provided in the reflection ring 69 . The gas discharge hole 86 is communicated and connected to the gas discharge pipe 88 through a buffer space 87 formed in an annular shape inside the side wall of the processing chamber 6 . The gas exhaust pipe 88 is connected to the exhaust mechanism 190 . In addition, a valve 89 is interposed in the middle of the path of the gas discharge pipe 88 . When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas discharge hole 86 through the buffer space 87 to the gas discharge pipe 88 . In addition, a plurality of gas supply holes 81 and gas discharge holes 86 may be provided along the circumferential direction of the processing chamber 6, or may be slit-shaped. In addition, the process gas supply source 85 and the exhaust mechanism 190 may be mechanisms provided in the heat treatment apparatus 100, or may be public facilities for a factory in which the heat treatment apparatus 100 is installed.

又，於搬送開口部66之前端亦連接有排出熱處理空間65內之氣體之氣體排出管191。氣體排出管191經由閥192連接於排氣機構190。藉由開啟閥192，而經由搬送開口部66排出處理腔室6內之氣體。 Moreover, the gas discharge pipe 191 which discharges the gas in the heat processing space 65 is also connected to the front end of the conveyance opening part 66. As shown in FIG. The gas discharge pipe 191 is connected to the exhaust mechanism 190 via the valve 192 . By opening the valve 192 , the gas in the processing chamber 6 is discharged through the transfer opening 66 .

圖4係表示保持部7之整體外觀之立體圖。保持部7係具備基台環71、連結部72及基座74而構成。基台環71、連結部72及基座74均由石英所形成。即，整個保持部7由石英所形成。 FIG. 4 is a perspective view showing the overall appearance of the holding portion 7 . The holding portion 7 includes a base ring 71 , a connection portion 72 , and a base 74 . The base ring 71 , the connecting portion 72 and the base 74 are all formed of quartz. That is, the entire holding portion 7 is formed of quartz.

基台環71係圓環形狀缺失一部分而成之圓弧形狀之石英構件。該缺失部分係為了防止下述移載機構10之移載臂11與基台環71之干涉而設置。基台環71係藉由載置於凹部62之底面，而支持於處理腔室6之壁面(參 照圖3)。於基台環71之上表面，沿著其圓環形狀之周向豎立設置有複數個連結部72(於本實施方式中為4個)。連結部72亦為石英構件，藉由熔接固接於基台環71。 The base ring 71 is a circular arc-shaped quartz member formed by missing a part of the circular ring shape. This missing portion is provided to prevent interference between the transfer arm 11 of the transfer mechanism 10 and the base ring 71 to be described later. The base ring 71 is supported on the wall surface of the processing chamber 6 by being placed on the bottom surface of the concave portion 62 (see According to Figure 3). On the upper surface of the base ring 71, a plurality of connecting portions 72 (four in the present embodiment) are erected along the circumferential direction of the annular shape. The connecting portion 72 is also a quartz member, and is fixed to the base ring 71 by welding.

基座74由設置於基台環71之4個連結部72支持。圖5係基座74之俯視圖。又，圖6係基座74之剖視圖。基座74具備保持板75、導向環76及複數個基板支持銷77。保持板75係由石英所形成之大致圓形之平板狀構件。保持板75之直徑比半導體晶圓W之直徑大。即，保持板75具有比半導體晶圓W大之平面尺寸。 The base 74 is supported by the four connection parts 72 provided on the base ring 71 . FIG. 5 is a top view of the base 74 . 6 is a cross-sectional view of the base 74 . The base 74 includes a holding plate 75 , a guide ring 76 , and a plurality of substrate support pins 77 . The holding plate 75 is a substantially circular plate-shaped member formed of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. As shown in FIG. That is, the holding plate 75 has a larger plane size than the semiconductor wafer W. As shown in FIG.

於保持板75之上表面周緣部設置有導向環76。導向環76係具有比半導體晶圓W之直徑大之內徑之圓環形狀之構件。例如，於半導體晶圓W之直徑為

Figure 109121249-A0305-02-0018-3
300mm之情形時，導向環76之內徑為
Figure 109121249-A0305-02-0018-4
320mm。導向環76之內周被設為自保持板75朝向上方變寬之傾斜面。導向環76與保持板75相同由石英所形成。導向環76可熔接於保持板75之上表面，亦可藉由另外加工所得之銷等固定於保持板75。或者，亦可將保持板75與導向環76加工成一體構件。 A guide ring 76 is provided on the peripheral edge portion of the upper surface of the holding plate 75 . The guide ring 76 is a ring-shaped member having an inner diameter larger than that of the semiconductor wafer W. As shown in FIG. For example, the diameter of the semiconductor wafer W is
Figure 109121249-A0305-02-0018-3
In the case of 300mm, the inner diameter of the guide ring 76 is
Figure 109121249-A0305-02-0018-4
320mm. The inner circumference of the guide ring 76 is formed as an inclined surface that widens upward from the holding plate 75 . The guide ring 76 is formed of quartz like the holding plate 75 . The guide ring 76 can be welded to the upper surface of the holding plate 75 , and can also be fixed to the holding plate 75 by pins or the like obtained by other processing. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.

將保持板75之上表面中較導向環76更靠內側之區域設為保持半導體晶圓W之平面狀之保持面75a。於保持板75之保持面75a豎立設置有複數個基板支持銷77。於本實施方式中，沿著與保持面75a之外周圓(導向環76之內周圓)為同心圓之圓周每隔30°豎立設置有共計12個基板支持銷77。配置有12個基板支持銷77之圓之直徑(相對向之基板支持銷77之間之距離)小於 半導體晶圓W之直徑，若半導體晶圓W之直徑為

Figure 109121249-A0305-02-0019-5
300mm，則該圓之直徑為
Figure 109121249-A0305-02-0019-6
270mm~
Figure 109121249-A0305-02-0019-7
280mm(於本實施方式中為
Figure 109121249-A0305-02-0019-8
270mm)。各個基板支持銷77由石英所形成。複數個基板支持銷77可藉由熔接設置於保持板75之上表面，亦可與保持板75加工成一體。 In the upper surface of the holding plate 75 , an area on the inner side of the guide ring 76 is defined as a planar holding surface 75 a for holding the semiconductor wafer W. As shown in FIG. A plurality of substrate support pins 77 are erected on the holding surface 75 a of the holding plate 75 . In the present embodiment, a total of 12 substrate support pins 77 are erected at intervals of 30° along the circumference concentric with the outer circumference of the holding surface 75 a (the inner circumference of the guide ring 76 ). The diameter of the circle in which the 12 substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77 ) is smaller than the diameter of the semiconductor wafer W, if the diameter of the semiconductor wafer W is
Figure 109121249-A0305-02-0019-5
300mm, the diameter of the circle is
Figure 109121249-A0305-02-0019-6
270mm~
Figure 109121249-A0305-02-0019-7
280mm (in this embodiment, it is
Figure 109121249-A0305-02-0019-8
270mm). Each of the substrate support pins 77 is formed of quartz. The plurality of substrate support pins 77 can be disposed on the upper surface of the holding plate 75 by welding, or can be processed into one piece with the holding plate 75 .

返回至圖4，豎立設置於基台環71之4個連結部72與基座74之保持板75之周緣部藉由熔接而固接。即，基座74與基台環71係藉由連結部72而固定地連結。藉由如此將保持部7之基台環71支持於處理腔室6之壁面，而將保持部7安裝於處理腔室6。於保持部7被安裝在處理腔室6之狀態下，基座74之保持板75成為水平姿勢(法線與鉛直方向一致之姿勢)。即，保持板75之保持面75a成為水平面。 Returning to FIG. 4 , the four connecting portions 72 erected on the base ring 71 and the peripheral portion of the holding plate 75 of the base 74 are fixed by welding. That is, the base 74 and the base ring 71 are fixedly connected by the connection portion 72 . By supporting the base ring 71 of the holding portion 7 on the wall surface of the processing chamber 6 in this way, the holding portion 7 is attached to the processing chamber 6 . In a state where the holding portion 7 is attached to the processing chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal posture (a posture in which the normal line and the vertical direction coincide). That is, the holding surface 75a of the holding plate 75 becomes a horizontal surface.

搬入至處理腔室6之半導體晶圓W被以水平姿勢載置並保持在安裝於處理腔室6之保持部7之基座74上。此時，半導體晶圓W由豎立設置於保持板75上之12個基板支持銷77支持而保持於基座74上。更嚴格而言，12個基板支持銷77之上端部與半導體晶圓W之下表面接觸而支持該半導體晶圓W。由於12個基板支持銷77之高度(基板支持銷77之上端至保持板75之保持面75a之距離)均等，故而能夠藉由12個基板支持銷77將半導體晶圓W支持為水平姿勢。 The semiconductor wafer W carried into the processing chamber 6 is placed and held on the susceptor 74 attached to the holding portion 7 of the processing chamber 6 in a horizontal posture. At this time, the semiconductor wafer W is supported on the susceptor 74 by the twelve substrate support pins 77 erected on the holding plate 75 . More strictly, the upper ends of the twelve substrate support pins 77 are in contact with the lower surface of the semiconductor wafer W to support the semiconductor wafer W. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pins 77 to the holding surface 75a of the holding plate 75 ) is equal, the semiconductor wafer W can be supported in a horizontal posture by the twelve substrate support pins 77 .

又，半導體晶圓W由複數個基板支持銷77與保持板75之保持面75a隔開規定間隔地支持。導向環76之厚度大於基板支持銷77之高度。因此，藉由導向環76防止由複數個基板支持銷77支持之半導體晶圓W之水平方向 之錯位。 In addition, the semiconductor wafer W is supported by the plurality of substrate support pins 77 and the holding surface 75a of the holding plate 75 at a predetermined interval. The thickness of the guide ring 76 is greater than the height of the substrate support pins 77 . Therefore, the horizontal direction of the semiconductor wafer W supported by the plurality of substrate support pins 77 is prevented by the guide ring 76 misplacement.

再者，如圖4及圖5所示，於基座74之保持板75上下貫通地形成有開口部78。開口部78係為了供下部輻射溫度計20(參照圖3)接收自半導體晶圓W之下表面放射之放射光(紅外光)而設置。即，下部輻射溫度計20經由開口部78及安裝於腔室側部61之貫通孔61b中之透明窗21接收自半導體晶圓W之下表面放射之光而測定該半導體晶圓W之溫度。進而，於基座74之保持板75貫穿設置有供下述移載機構10之頂起銷12為了交接半導體晶圓W而貫通之4個貫通孔79。 Furthermore, as shown in FIGS. 4 and 5 , an opening 78 is formed so as to penetrate vertically through the holding plate 75 of the base 74 . The opening portion 78 is provided for the lower radiation thermometer 20 (see FIG. 3 ) to receive the radiation (infrared light) emitted from the lower surface of the semiconductor wafer W. As shown in FIG. That is, the lower radiation thermometer 20 measures the temperature of the semiconductor wafer W by receiving light emitted from the lower surface of the semiconductor wafer W through the opening 78 and the transparent window 21 installed in the through hole 61b of the chamber side 61 . Furthermore, the holding plate 75 of the susceptor 74 is provided with four through holes 79 through which the lift pins 12 of the transfer mechanism 10 to be described later pass through in order to transfer the semiconductor wafer W.

圖7係移載機構10之俯視圖。又，圖8係移載機構10之側視圖。移載機構10具備2根移載臂11。移載臂11被設為沿著大致圓環狀之凹部62之圓弧形狀。於各個移載臂11豎立設置有2根頂起銷12。各移載臂11能夠藉由水平移動機構13進行旋動。水平移動機構13使一對移載臂11於相對於保持部7進行半導體晶圓W之移載之移載動作位置(圖7之實線位置)與俯視下不與保持在保持部7上之半導體晶圓W重疊之退避位置(圖7之二點鏈線位置)之間水平移動。移載動作位置位於基座74之下方，退避位置較基座74更靠外側。作為水平移動機構13，可為藉由單獨之馬達分別使各移載臂11旋動之機構，亦可為使用連桿機構藉由1個馬達使一對移載臂11聯動而旋動之機構。 FIG. 7 is a top view of the transfer mechanism 10 . 8 is a side view of the transfer mechanism 10. FIG. The transfer mechanism 10 includes two transfer arms 11 . The transfer arm 11 is formed in an arc shape along the substantially annular recessed portion 62 . Two jacking pins 12 are erected on each transfer arm 11 . Each transfer arm 11 can be rotated by the horizontal movement mechanism 13 . The horizontal movement mechanism 13 causes the pair of transfer arms 11 to be held on the holding portion 7 from a transfer operation position (a solid line position in FIG. 7 ) for transferring the semiconductor wafer W relative to the holding portion 7 and in a plan view. The semiconductor wafers W are moved horizontally between the retracted positions (the positions of the two-dot chain lines in FIG. 7 ). The transfer operation position is located below the base 74 , and the retracted position is outside the base 74 . The horizontal movement mechanism 13 may be a mechanism in which each transfer arm 11 is rotated by a separate motor, or may be a mechanism in which a pair of transfer arms 11 is linked and rotated by a single motor using a link mechanism .

又，一對移載臂11藉由升降機構14與水平移動機構13一起升降移動。當升降機構14使一對移載臂11於移載動作位置上升時，共計4根頂起 銷12穿過貫穿設置於基座74之貫通孔79(參照圖4、5)，從而頂起銷12之上端自基座74之上表面突出。另一方面，當升降機構14使一對移載臂11於移載動作位置下降而將頂起銷12自貫通孔79拔出，從而水平移動機構13使一對移載臂11以打開之方式移動時，各移載臂11移動至退避位置。一對移載臂11之退避位置位於保持部7之基台環71之正上方。由於基台環71被載置於凹部62之底面，故而移載臂11之退避位置位於凹部62之內側。再者，於移載機構10之設置有驅動部(水平移動機構13及升降機構14)之部位附近亦設置有省略圖示之排氣機構，而構成為將移載機構10之驅動部周邊之環境氣體向處理腔室6之外部排出。 In addition, the pair of transfer arms 11 are moved up and down together with the horizontal movement mechanism 13 by the lift mechanism 14 . When the lift mechanism 14 raises the pair of transfer arms 11 at the transfer operation position, a total of four lift up The pin 12 passes through the through hole 79 (refer to FIGS. 4 and 5 ) provided through the base 74 , so that the upper end of the push-up pin 12 protrudes from the upper surface of the base 74 . On the other hand, when the elevating mechanism 14 lowers the pair of transfer arms 11 at the transfer operation position and pulls out the jacking pin 12 from the through hole 79 , the horizontal movement mechanism 13 opens the pair of transfer arms 11 When moving, each transfer arm 11 moves to the retracted position. The retracted position of the pair of transfer arms 11 is located just above the base ring 71 of the holding portion 7 . Since the base ring 71 is placed on the bottom surface of the concave portion 62 , the retracted position of the transfer arm 11 is located inside the concave portion 62 . Furthermore, an exhaust mechanism (not shown in the figure) is also provided in the vicinity of the part where the driving part (the horizontal movement mechanism 13 and the elevating mechanism 14) of the transfer mechanism 10 is provided, and it is constituted so that the area around the driving part of the transfer mechanism 10 is separated. The ambient gas is exhausted to the outside of the processing chamber 6 .

返回至圖3，設置於處理腔室6之上方之閃光燈室5係於殼體51之內側具備由複數根(於本實施方式中為30根)氙氣閃光燈FL所構成之光源、及以覆蓋該光源之上方之方式設置之反射器52而構成。又，於閃光燈室5之殼體51之底部安裝有燈光放射窗53。構成閃光燈室5之底部之燈光放射窗53係由石英所形成之板狀之石英窗。藉由將閃光燈室5設置於處理腔室6之上方，燈光放射窗53與上側腔室窗63相對向。閃光燈FL自處理腔室6之上方經由燈光放射窗53及上側腔室窗63而向熱處理空間65照射閃光。 Returning to FIG. 3 , the flash lamp chamber 5 provided above the processing chamber 6 is provided with a light source composed of a plurality of (30 in this embodiment) xenon flash lamps FL inside the casing 51 , and a light source to cover the It is constituted by a reflector 52 arranged above the light source. In addition, a light emission window 53 is attached to the bottom of the casing 51 of the flash chamber 5 . The light emission window 53 constituting the bottom of the flash chamber 5 is a plate-shaped quartz window formed of quartz. By arranging the flash chamber 5 above the processing chamber 6 , the light emission window 53 faces the upper chamber window 63 . The flash lamp FL irradiates the heat treatment space 65 with flash light from above the processing chamber 6 through the lamp radiation window 53 and the upper chamber window 63 .

複數個閃光燈FL係分別具有長條圓筒形狀之棒狀燈，且以各自之長度方向沿著由保持部7保持之半導體晶圓W之主面(即沿著水平方向)相互平行之方式排列成平面狀。因此，由閃光燈FL之排列所形成之平面亦為水平面。 The plurality of flash lamps FL are rod-shaped lamps each having an elongated cylindrical shape, and are arranged in such a manner that their respective longitudinal directions are parallel to each other along the main surface (ie, along the horizontal direction) of the semiconductor wafer W held by the holding portion 7 . into a flat shape. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

氙氣閃光燈FL具備：棒狀之玻璃管(放電管)，其於其內部封入有氙氣且於其兩端部配設有與電容器連接之陽極及陰極；及觸發電極，其附設於該玻璃管之外周面上。由於氙氣為電絕緣體，故而即便於電容器中蓄積了電荷，通常狀態下在玻璃管內亦不會有電流流動。然而，於對觸發電極施加高電壓而破壞了絕緣之情形時，蓄積於電容器中之電流瞬間流入至玻璃管內，藉由此時氙之原子或分子之激發而放出光。關於此種氙氣閃光燈FL，由於預先蓄積於電容器中之靜電能量被轉換為0.1毫秒至100毫秒之極短光脈衝，故而與如鹵素燈HL之連續點亮之光源相比，具有能夠照射極強光之特徵。即，閃光燈FL係於未達1秒之極短時間內瞬間發光之脈衝發光燈。再者，閃光燈FL之發光時間可藉由對閃光燈FL進行電力供給之燈電源之線圈常數進行調整。 The xenon flash lamp FL includes: a rod-shaped glass tube (discharge tube) in which xenon gas is sealed and an anode and a cathode connected to a capacitor are arranged at both ends thereof; and a trigger electrode attached to the glass tube on the peripheral surface. Since xenon gas is an electrical insulator, even if electric charge is accumulated in the capacitor, no current flows in the glass tube under normal conditions. However, when a high voltage is applied to the trigger electrode and the insulation is broken, the current accumulated in the capacitor flows into the glass tube instantaneously, and light is emitted by the excitation of xenon atoms or molecules at this time. With regard to such a xenon flash lamp FL, since the electrostatic energy stored in the capacitor in advance is converted into extremely short light pulses of 0.1 millisecond to 100 milliseconds, it is possible to irradiate extremely strong light compared to a light source that is continuously lit such as a halogen lamp HL. characteristics of light. That is, the flash lamp FL is a pulsed light-emitting lamp that emits light instantaneously in an extremely short period of less than 1 second. Furthermore, the light-emitting time of the flash lamp FL can be adjusted by the coil constant of the lamp power supply for supplying power to the flash lamp FL.

又，反射器52於複數個閃光燈FL之上方以覆蓋其等整體之方式設置。反射器52之基本功能係將自複數個閃光燈FL射出之閃光向熱處理空間65側反射。反射器52由鋁合金板所形成，其正面(面向閃光燈FL一側之面)藉由噴砂處理被實施了粗面化加工。 Also, the reflector 52 is provided above the plurality of flash lamps FL so as to cover the entirety thereof. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL toward the heat treatment space 65 side. The reflector 52 is formed of an aluminum alloy plate, and the front surface (the surface facing the flashlight FL side) is roughened by sandblasting.

設置於處理腔室6之下方之鹵素燈室4於殼體41之內側內置有複數根(於本實施方式中為40根)鹵素燈HL。複數個鹵素燈HL自處理腔室6之下方經由下側腔室窗64向熱處理空間65進行光照射。 The halogen lamp chamber 4 provided below the processing chamber 6 has a plurality of (40 in this embodiment) halogen lamps HL built inside the casing 41 . The plurality of halogen lamps HL irradiate the heat treatment space 65 with light from below the treatment chamber 6 through the lower chamber window 64 .

圖9係表示複數個鹵素燈HL之配置之俯視圖。於本實施方式中，上下2層各配設有20根鹵素燈HL。各鹵素燈HL係具有長條圓筒形狀之棒狀 燈。上層、下層中，20根鹵素燈HL均以各自之長度方向沿著由保持部7保持之半導體晶圓W之主面(即沿著水平方向)相互平行之方式排列。因此，上層、下層中，由鹵素燈HL之排列所形成之平面均為水平面。 FIG. 9 is a plan view showing the arrangement of a plurality of halogen lamps HL. In this embodiment, 20 halogen lamps HL are arranged on each of the upper and lower layers. Each halogen lamp HL is rod-shaped with a long cylindrical shape light. In the upper layer and the lower layer, the 20 halogen lamps HL are arranged so that their respective longitudinal directions are parallel to each other along the main surface (ie, along the horizontal direction) of the semiconductor wafer W held by the holding portion 7 . Therefore, in the upper layer and the lower layer, the planes formed by the arrangement of the halogen lamps HL are all horizontal planes.

又，如圖9所示，上層、下層中均為，較之與由保持部7保持之半導體晶圓W之中央部對向之區域，與周緣部對向之區域之鹵素燈HL之配設密度更高。即，上下層中均為，較之燈排列之中央部，周緣部之鹵素燈HL之配設間距更短。因此，能夠對在藉由來自鹵素燈HL之光照射進行加熱時容易發生溫度降低之半導體晶圓W之周緣部進行更多光量之照射。 Further, as shown in FIG. 9 , in both the upper and lower layers, the halogen lamps HL are disposed in the region facing the peripheral portion of the semiconductor wafer W held by the holding portion 7 compared to the region facing the central portion of the semiconductor wafer W held by the holding portion 7 higher density. That is, in both the upper and lower layers, the arrangement pitch of the halogen lamps HL in the peripheral portion is shorter than that in the central portion of the lamp arrangement. Therefore, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W, which tends to decrease in temperature when heated by light irradiation from the halogen lamp HL.

又，由上層之鹵素燈HL所構成之燈組與由下層之鹵素燈HL所構成之燈組被以呈格子狀交叉之方式排列。即，以上層之各鹵素燈HL之長度方向與下層之各鹵素燈HL之長度方向正交之方式配設有共計40根鹵素燈HL。 In addition, the lamp group composed of the halogen lamps HL in the upper layer and the lamp group composed of the halogen lamps HL in the lower layer are arranged so as to cross in a lattice shape. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of each halogen lamp HL of the upper layer and the longitudinal direction of each halogen lamp HL of the lower layer are orthogonal to each other.

鹵素燈HL係藉由對配設於玻璃管內部之燈絲通電，使燈絲白熾化而發光之燈絲方式之光源。玻璃管之內部封入有於氮氣或氬氣等惰性氣體中導入微量鹵族元素(碘、溴等)而成之氣體。藉由導入鹵族元素，能夠抑制燈絲之折損並且將燈絲之溫度設定為高溫。因此，鹵素燈HL具有與通常之白熾燈泡相比壽命較長且能夠連續地照射強光之特性。即，鹵素燈HL係連續發光至少1秒以上之連續點亮燈。又，鹵素燈HL由於為棒狀燈，故而壽命較長，藉由沿水平方向配置鹵素燈HL，向上方之半導體晶圓W之輻射效率變得優異。 The halogen lamp HL is a light source of a filament type which makes the filament incandescent and emits light by energizing the filament arranged inside the glass tube. The inside of the glass tube is filled with a gas obtained by introducing a trace amount of halogen elements (iodine, bromine, etc.) into an inert gas such as nitrogen or argon. By introducing the halogen element, the breakage of the filament can be suppressed and the temperature of the filament can be set to a high temperature. Therefore, the halogen lamp HL has the characteristics of being able to continuously irradiate strong light with a longer life than a general incandescent light bulb. That is, the halogen lamp HL is a continuous lighting lamp which continuously emits light for at least 1 second or more. Moreover, since the halogen lamp HL is a rod-shaped lamp, the lifetime is long, and by arranging the halogen lamp HL in the horizontal direction, the radiation efficiency of the semiconductor wafer W toward the upper side becomes excellent.

又，於鹵素燈室4之殼體41內，亦於2層鹵素燈HL之下側設置有反射器43(圖3)。反射器43將自複數個鹵素燈HL射出之光向熱處理空間65側反射。 In addition, in the housing 41 of the halogen lamp chamber 4, a reflector 43 is also provided on the lower side of the two-layer halogen lamp HL (FIG. 3). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL toward the heat treatment space 65 side.

如圖3所示，於處理腔室6中設置有上部輻射溫度計25及下部輻射溫度計20這2個輻射溫度計(於本實施方式中為高溫計)。上部輻射溫度計25設置於由基座74保持之半導體晶圓W之斜上方，並且下部輻射溫度計20設置於由基座74保持之半導體晶圓W之斜下方。上部輻射溫度計25之紅外線感測器29之光軸與半導體晶圓W之主面所成之角度較小，例如為10°。同樣地，下部輻射溫度計20之紅外線感測器24之光軸與半導體晶圓W之主面所成之角度例如亦為10°。上部輻射溫度計25接收自半導體晶圓W之上表面放射之紅外光，並根據該紅外光之強度測定該上表面之溫度。上部輻射溫度計25之紅外線感測器29具備InSb(銻化銦)光學元件，以便能夠應對被照射閃光之瞬間半導體晶圓W之上表面之急劇之溫度變化。另一方面，下部輻射溫度計20接收自半導體晶圓W之下表面放射之紅外光，並根據該紅外光之強度測定該下表面之溫度。 As shown in FIG. 3 , two radiation thermometers (a pyrometer in the present embodiment) of an upper radiation thermometer 25 and a lower radiation thermometer 20 are installed in the processing chamber 6 . The upper radiation thermometer 25 is disposed obliquely above the semiconductor wafer W held by the susceptor 74 , and the lower radiation thermometer 20 is disposed obliquely below the semiconductor wafer W held by the susceptor 74 . The angle formed by the optical axis of the infrared sensor 29 of the upper radiation thermometer 25 and the main surface of the semiconductor wafer W is small, for example, 10°. Similarly, the angle formed by the optical axis of the infrared sensor 24 of the lower radiation thermometer 20 and the main surface of the semiconductor wafer W is also, for example, 10°. The upper radiation thermometer 25 receives infrared light emitted from the upper surface of the semiconductor wafer W, and measures the temperature of the upper surface according to the intensity of the infrared light. The infrared sensor 29 of the upper radiation thermometer 25 is provided with an InSb (indium antimonide) optical element, so as to be able to cope with the sudden temperature change of the upper surface of the semiconductor wafer W at the moment when the flash is irradiated. On the other hand, the lower radiation thermometer 20 receives infrared light emitted from the lower surface of the semiconductor wafer W, and measures the temperature of the lower surface according to the intensity of the infrared light.

除了上述構成以外，熱處理部160為了防止於半導體晶圓W之熱處理時鹵素燈HL及閃光燈FL所產生之熱能引起鹵素燈室4、閃光燈室5及處理腔室6之溫度過度上升，進而具備各種冷卻用構造。例如，於處理腔室6之壁體設置有水冷管(省略圖示)。又，將鹵素燈室4及閃光燈室5設為於內部形成氣流而進行排熱之空氣冷卻構造。又，亦向上側腔室窗63與燈光放射窗53之間隙供給空氣，而對閃光燈室5及上側腔室窗63進行冷卻。 In addition to the above-mentioned configuration, the heat treatment section 160 is further provided with various types of thermal energy in order to prevent the temperature of the halogen lamp chamber 4 , the flash lamp chamber 5 and the processing chamber 6 from rising excessively due to thermal energy generated by the halogen lamp HL and the flash lamp FL during the heat treatment of the semiconductor wafer W. Structure for cooling. For example, a water cooling pipe (not shown) is provided on the wall of the processing chamber 6 . Moreover, the halogen lamp chamber 4 and the flash lamp chamber 5 are set as the air cooling structure which forms an air flow inside, and discharges heat. In addition, air is also supplied to the gap between the upper chamber window 63 and the light emission window 53 to cool the flash lamp chamber 5 and the upper chamber window 63 .

圖10係表示設置於對準部230之反射率測定部232及控制部3之構成之圖。反射率測定部232具備投光部300、受光部235及半反射鏡236。於對準部230之對準腔室231內設置有支持半導體晶圓W並使其旋轉之旋轉支持部237、及旋轉驅動該旋轉支持部237之旋轉馬達238。旋轉馬達238使支持半導體晶圓W之旋轉支持部237旋轉，由此調整該半導體晶圓W之朝向。 FIG. 10 is a diagram showing the configuration of the reflectance measuring unit 232 and the control unit 3 provided in the alignment unit 230 . The reflectance measuring unit 232 includes a light projecting unit 300 , a light receiving unit 235 , and a half mirror 236 . Inside the alignment chamber 231 of the alignment portion 230 are provided a rotation support portion 237 that supports and rotates the semiconductor wafer W, and a rotation motor 238 that rotationally drives the rotation support portion 237 . The rotation motor 238 rotates the rotation support portion 237 that supports the semiconductor wafer W, thereby adjusting the orientation of the semiconductor wafer W. As shown in FIG.

投光部300具備氙氣光源、鹵素光源或LED(Light Emitting Diode，發光二極體)光源等光源而射出反射率測定用光。受光部235具備將所接收到之光之強度轉換為電信號之受光元件。自投光部300射出之光被半反射鏡236反射而垂直地照射至由旋轉支持部237支持之半導體晶圓W之上表面。自投光部300照射之光被半導體晶圓W之上表面反射。該反射光透過半反射鏡236被受光部235接收。控制部3基於受光部235所接收到之反射光之強度算出半導體晶圓W之上表面之反射率。再者，投光部300較佳為具備所照射之波長區域不同之複數個光源。若投光部300具備波長區域不同之複數個光源，則能夠遍及較大波長範圍地測定半導體晶圓W之反射率。又，投光部300亦可對半導體晶圓W之上表面之多處照射光。若對半導體晶圓W之上表面之多處照射光，則能夠降低局部之圖案相關性。 The light projecting unit 300 includes a light source such as a xenon light source, a halogen light source, or an LED (Light Emitting Diode) light source, and emits light for reflectance measurement. The light-receiving portion 235 includes a light-receiving element that converts the intensity of the received light into an electrical signal. The light emitted from the light projecting portion 300 is reflected by the half mirror 236 and irradiated vertically to the upper surface of the semiconductor wafer W supported by the rotation support portion 237 . The light irradiated from the light projection part 300 is reflected by the upper surface of the semiconductor wafer W. As shown in FIG. The reflected light is received by the light receiving unit 235 through the half mirror 236 . The control unit 3 calculates the reflectance of the upper surface of the semiconductor wafer W based on the intensity of the reflected light received by the light receiving unit 235 . Furthermore, the light projecting part 300 preferably includes a plurality of light sources having different wavelength regions to be irradiated. If the light projecting unit 300 includes a plurality of light sources having different wavelength ranges, the reflectance of the semiconductor wafer W can be measured over a wide wavelength range. In addition, the light projection unit 300 may irradiate light to a plurality of places on the upper surface of the semiconductor wafer W. As shown in FIG. If light is irradiated to many places on the upper surface of the semiconductor wafer W, the local pattern correlation can be reduced.

控制部3對設置於熱處理裝置100之上述各種動作機構進行控制。控制部3之硬件構成與一般之電腦相同。即，控制部3具有：作為進行各種運算處理之電路之CPU(Central Processing Unit，中央處理器)、作為記憶 基本程式之讀出專用記憶體之ROM(Read Only Memory，唯讀記憶體)、作為記憶各種資訊之自由讀寫記憶體之RAM(Random Access Memory，隨機存取記憶體)、及預先記憶控制用軟體或資料等之磁碟35。藉由控制部3之CPU執行規定之處理程式，熱處理裝置100中之處理得以推進。反射率計算部31、特定部36、輻射率計算部32及溫度預測部39係藉由控制部3之CPU執行規定之處理程式而實現之功能處理部。關於反射率計算部31、特定部36、輻射率計算部32及溫度預測部39之處理內容，將於下文進一步說明。又，圖1中，於移載傳送部101內示出了控制部3，但不限於此，控制部3可配置於熱處理裝置100內之任意位置。 The control unit 3 controls the above-described various operation mechanisms provided in the heat treatment apparatus 100 . The hardware configuration of the control unit 3 is the same as that of a general computer. That is, the control unit 3 includes a CPU (Central Processing Unit) as a circuit for performing various arithmetic processes, a memory as a ROM (Read Only Memory) for reading special memory for basic programs, RAM (Random Access Memory) for free reading and writing memory for storing various information, and pre-memory control Disk 35 for software or data, etc. When the CPU of the control unit 3 executes a predetermined processing program, the processing in the heat treatment apparatus 100 is advanced. The reflectance calculating unit 31 , the specifying unit 36 , the emissivity calculating unit 32 , and the temperature predicting unit 39 are functional processing units realized by the CPU of the control unit 3 executing a predetermined processing program. The processing contents of the reflectance calculation unit 31 , the specific unit 36 , the emissivity calculation unit 32 , and the temperature prediction unit 39 will be further described below. In addition, although the control part 3 is shown in the transfer conveyance part 101 in FIG. 1, it is not limited to this, and the control part 3 may be arrange|positioned in the arbitrary position in the heat processing apparatus 100.

又，控制部3連接有顯示部34及輸入部33。控制部3於顯示部34顯示各種資訊。熱處理裝置100之操作員能夠一面確認顯示於顯示部34上之資訊，一面自輸入部33輸入各種指令或參數。作為輸入部33，例如可使用鍵盤或滑鼠。作為顯示部34，例如可使用液晶顯示器。於本實施方式中，作為顯示部34及輸入部33，採用的是設置於熱處理裝置100之外壁之液晶觸控面板，使其兼具兩者功能。 In addition, a display unit 34 and an input unit 33 are connected to the control unit 3 . The control unit 3 displays various information on the display unit 34 . The operator of the heat treatment apparatus 100 can input various commands or parameters from the input unit 33 while checking the information displayed on the display unit 34 . As the input unit 33, for example, a keyboard or a mouse can be used. As the display unit 34, for example, a liquid crystal display can be used. In this embodiment, as the display unit 34 and the input unit 33 , a liquid crystal touch panel disposed on the outer wall of the heat treatment apparatus 100 is used, so that both functions can be combined.

其次，對本發明之熱處理裝置100之處理動作進行說明。此處，首先對針對成為製品之通常之半導體晶圓(成品晶圓)W進行之典型處理動作進行說明。成為處理對象之半導體晶圓W係藉由離子注入法添加了雜質(離子)之半導體基板。該雜質之活化係藉由利用熱處理裝置100進行之閃光照射加熱處理(退火)而執行。 Next, the processing operation of the heat treatment apparatus 100 of the present invention will be described. Here, a typical processing operation performed on a normal semiconductor wafer (finished wafer) W that becomes a product will be described first. The semiconductor wafer W to be processed is a semiconductor substrate to which impurities (ions) are added by an ion implantation method. Activation of the impurities is performed by flash irradiation heat treatment (annealing) using the heat treatment apparatus 100 .

首先，將注入有雜質之未處理之半導體晶圓W以在載具C中收容有多片之狀態載置於移載傳送部101之裝載口110。然後，交接機器人120自載具C逐片取出未處理之半導體晶圓W，並搬入至對準部230之對準腔室231。於對準腔室231中，使支持於旋轉支持部237之半導體晶圓W以其中心部作為旋轉中心在水平面內繞鉛直方向軸旋轉，並光學地檢測凹口等，由此調整半導體晶圓W之朝向。 First, the unprocessed semiconductor wafer W into which impurities have been implanted is placed on the loading port 110 of the transfer conveying section 101 in a state in which a plurality of wafers are accommodated in the carrier C. As shown in FIG. Then, the handover robot 120 takes out the unprocessed semiconductor wafers W one by one from the carrier C, and carries them into the alignment chamber 231 of the alignment unit 230 . In the alignment chamber 231, the semiconductor wafer W supported by the rotation support portion 237 is rotated around the vertical axis in the horizontal plane with the center portion as the center of rotation, and the notch and the like are optically detected, thereby adjusting the semiconductor wafer. The orientation of W.

其次，移載傳送部101之交接機器人120自對準腔室231取出被調整了朝向之半導體晶圓W，並搬入至冷卻部130之第1冷卻腔室131或冷卻部140之第2冷卻腔室141。搬入至第1冷卻腔室131或者第2冷卻腔室141之未處理之半導體晶圓W被搬送機器人150搬出至搬送腔室170。於未處理之半導體晶圓W自移載傳送部101經過第1冷卻腔室131或者第2冷卻腔室141被移送至搬送腔室170時，第1冷卻腔室131及第2冷卻腔室141作為用以交接半導體晶圓W之路徑發揮功能。 Next, the transfer robot 120 of the transfer unit 101 takes out the semiconductor wafer W whose orientation is adjusted from the alignment chamber 231 , and carries it into the first cooling chamber 131 of the cooling unit 130 or the second cooling chamber of the cooling unit 140 Room 141. The unprocessed semiconductor wafer W carried into the first cooling chamber 131 or the second cooling chamber 141 is carried out to the transfer chamber 170 by the transfer robot 150 . When the unprocessed semiconductor wafer W is transferred from the transfer unit 101 to the transfer chamber 170 via the first cooling chamber 131 or the second cooling chamber 141, the first cooling chamber 131 and the second cooling chamber 141 It functions as a route for transferring the semiconductor wafer W.

取出了半導體晶圓W之搬送機器人150以朝向熱處理部160之方式回轉。繼而，閘閥185將處理腔室6與搬送腔室170之間開啟，搬送機器人150將未處理之半導體晶圓W搬入至處理腔室6。此時，於先行完成加熱處理之半導體晶圓W存在於處理腔室6之情形時，藉由搬送手151a、151b其中一者取出加熱處理後之半導體晶圓W後，將未處理之半導體晶圓W搬入至處理腔室6而進行晶圓更換。然後，閘閥185將處理腔室6與搬送腔室170之間關閉。 The transfer robot 150 from which the semiconductor wafer W has been taken out is turned toward the heat treatment unit 160 . Then, the gate valve 185 opens between the processing chamber 6 and the transfer chamber 170 , and the transfer robot 150 transfers the unprocessed semiconductor wafer W into the processing chamber 6 . At this time, when the semiconductor wafer W that has completed the heat treatment in advance exists in the processing chamber 6, the untreated semiconductor wafer W is taken out by one of the transfer hands 151a and 151b, and then the untreated semiconductor wafer W is removed. The circle W is carried into the processing chamber 6 to perform wafer exchange. Then, the gate valve 185 closes the space between the processing chamber 6 and the transfer chamber 170 .

於利用鹵素燈HL對搬入至處理腔室6之半導體晶圓W進行預加熱之後，藉由來自閃光燈FL之閃光照射進行閃光加熱處理。藉由該閃光加熱處理，對注入至半導體晶圓W中之雜質進行活化。 After preheating the semiconductor wafer W carried into the processing chamber 6 by the halogen lamp HL, flash heating processing is performed by flash irradiation from the flash lamp FL. The impurity implanted into the semiconductor wafer W is activated by this flash heat treatment.

於閃光加熱處理結束後，閘閥185再次將處理腔室6與搬送腔室170之間開啟，搬送機器人150將閃光加熱處理後之半導體晶圓W自處理腔室6搬出至搬送腔室170。取出了半導體晶圓W之搬送機器人150以自朝向處理腔室6變成朝向第1冷卻腔室131或第2冷卻腔室141之方式回轉。又，閘閥185將處理腔室6與搬送腔室170之間關閉。 After the flash heating process is completed, the gate valve 185 opens the space between the processing chamber 6 and the transfer chamber 170 again, and the transfer robot 150 unloads the semiconductor wafer W after the flash heating treatment from the processing chamber 6 to the transfer chamber 170 . The transfer robot 150 that has taken out the semiconductor wafer W rotates so as to turn from the processing chamber 6 to the first cooling chamber 131 or the second cooling chamber 141 . Moreover, the gate valve 185 closes the space between the processing chamber 6 and the transfer chamber 170 .

然後，搬送機器人150將加熱處理後之半導體晶圓W搬入至冷卻部130之第1冷卻腔室131或冷卻部140之第2冷卻腔室141。此時，該半導體晶圓W若於加熱處理前是經過第1冷卻腔室131而來的，則於加熱處理後亦搬入至第1冷卻腔室131，若於加熱處理前是經過第2冷卻腔室141而來的，則於加熱處理後亦搬入至第2冷卻腔室141。於第1冷卻腔室131或第2冷卻腔室141中，對閃光加熱處理後之半導體晶圓W進行冷卻處理。由於自熱處理部160之處理腔室6搬出時半導體晶圓W整體之溫度相對較高，故而要將其於第1冷卻腔室131或者第2冷卻腔室141內冷卻至常溫附近。 Then, the transfer robot 150 transfers the heat-treated semiconductor wafer W into the first cooling chamber 131 of the cooling unit 130 or the second cooling chamber 141 of the cooling unit 140 . At this time, if the semiconductor wafer W has passed through the first cooling chamber 131 before the heat treatment, it is also carried into the first cooling chamber 131 after the heat treatment, and if it has passed through the second cooling chamber before the heat treatment From the chamber 141, it is also carried into the second cooling chamber 141 after the heat treatment. In the first cooling chamber 131 or the second cooling chamber 141 , a cooling process is performed on the semiconductor wafer W after the flash heating process. Since the temperature of the entire semiconductor wafer W when unloaded from the processing chamber 6 of the thermal processing unit 160 is relatively high, it is cooled to near normal temperature in the first cooling chamber 131 or the second cooling chamber 141 .

於經過規定之冷卻處理時間後，交接機器人120將冷卻後之半導體晶圓W自第1冷卻腔室131或者第2冷卻腔室141搬出，並返還給載具C。當載具C中收容有規定片數之處理完畢之半導體晶圓W時，該載具C被自移載傳送部101之裝載口110搬出。 After a predetermined cooling process time has elapsed, the transfer robot 120 unloads the cooled semiconductor wafer W from the first cooling chamber 131 or the second cooling chamber 141 and returns it to the carrier C. When the predetermined number of processed semiconductor wafers W are accommodated in the carrier C, the carrier C is carried out from the loading port 110 of the transfer conveying unit 101 .

繼續對熱處理部160中之加熱處理進行說明。於將半導體晶圓W搬入至處理腔室6之前，開啟用以供氣之閥84，並且開啟用以排氣之閥89、192，開始對處理腔室6內供氣及排氣。當開啟閥84時，自氣體供給孔81對熱處理空間65供給氮氣。又，當開啟閥89時，自氣體排出孔86排出處理腔室6內之氣體。藉此，自處理腔室6內之熱處理空間65之上部供給之氮氣向下方流動，自熱處理空間65之下部排出。 Next, the heat treatment in the heat treatment unit 160 will be described. Before the semiconductor wafer W is loaded into the processing chamber 6 , the valve 84 for supplying gas is opened, and the valves 89 and 192 for exhausting are opened to start supplying and exhausting the gas into the processing chamber 6 . When the valve 84 is opened, nitrogen gas is supplied to the heat treatment space 65 from the gas supply hole 81 . Also, when the valve 89 is opened, the gas in the processing chamber 6 is discharged from the gas discharge hole 86 . As a result, the nitrogen gas supplied from the upper part of the heat treatment space 65 in the processing chamber 6 flows downward and is discharged from the lower part of the heat treatment space 65 .

又，藉由開啟閥192，亦自搬送開口部66排出處理腔室6內之氣體。進而，藉由省略圖示之排氣機構，亦排出移載機構10之驅動部周邊之環境氣體。再者，於熱處理部160中對半導體晶圓W實施熱處理時，對熱處理空間65持續地供給氮氣，其供給量根據處理步驟而適當變更。 In addition, by opening the valve 192, the gas in the processing chamber 6 is also discharged from the transfer opening 66. Furthermore, the ambient gas around the driving part of the transfer mechanism 10 is also exhausted by the exhaust mechanism not shown in the figure. In addition, when the semiconductor wafer W is thermally processed in the thermal processing section 160, nitrogen gas is continuously supplied to the thermal processing space 65, and the supply amount thereof is appropriately changed according to the processing steps.

繼而，閘閥185打開而開啟搬送開口部66，藉由搬送機器人150經由搬送開口部66將成為處理對象之半導體晶圓W搬入至處理腔室6內之熱處理空間65。搬送機器人150使保持未處理之半導體晶圓W之搬送手151a(或者搬送手151b)進入至保持部7之正上方位置並停止。然後，移載機構10之一對移載臂11自退避位置水平移動至移載動作位置並上升，藉此頂起銷12穿過貫通孔79自基座74之保持板75之上表面突出而接收半導體晶圓W。此時，頂起銷12上升至較基板支持銷77之上端更靠上方。 Next, the gate valve 185 is opened to open the transfer opening 66 , and the semiconductor wafer W to be processed is transferred into the thermal processing space 65 in the processing chamber 6 through the transfer opening 66 by the transfer robot 150 . The transfer robot 150 causes the transfer hand 151 a (or the transfer hand 151 b ) holding the unprocessed semiconductor wafer W to enter a position just above the holding portion 7 and stop. Then, one pair of the transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer action position and ascends, whereby the ejector pins 12 pass through the through holes 79 and protrude from the upper surface of the holding plate 75 of the base 74 . The semiconductor wafer W is received. At this time, the lift pins 12 are raised to be higher than the upper ends of the substrate support pins 77 .

於將未處理之半導體晶圓W載置於頂起銷12上後，搬送機器人150使搬送手151a自熱處理空間65退出，藉由閘閥185關閉搬送開口部66。然 後，藉由一對移載臂11下降，半導體晶圓W被自移載機構10交接至保持部7之基座74，並被以水平姿勢自下方保持。半導體晶圓W由豎立設置於保持板75上之複數個基板支持銷77支持而保持於基座74上。又，半導體晶圓W被以經過圖案形成且注入有雜質之正面作為上表面而保持於保持部7上。於由複數個基板支持銷77支持之半導體晶圓W之背面(與正面為相反側之主面)與保持板75之保持面75a之間形成規定間隔。下降至基座74之下方之一對移載臂11藉由水平移動機構13退避至退避位置、即凹部62之內側。 After the unprocessed semiconductor wafer W is placed on the lift pins 12 , the transfer robot 150 withdraws the transfer hand 151 a from the heat treatment space 65 , and the transfer opening 66 is closed by the gate valve 185 . Of course Then, the pair of transfer arms 11 is lowered, and the semiconductor wafer W is transferred from the transfer mechanism 10 to the base 74 of the holding portion 7 and held from below in a horizontal posture. The semiconductor wafer W is supported on the base 74 by a plurality of substrate support pins 77 erected on the holding plate 75 . In addition, the semiconductor wafer W is held on the holding portion 7 with the top surface on which the patterned and impurity-implanted surface is formed as the upper surface. A predetermined interval is formed between the back surface (the principal surface on the opposite side to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75 a of the holding plate 75 . One pair of transfer arms 11 descended below the base 74 is retracted by the horizontal movement mechanism 13 to the retracted position, that is, the inner side of the recess 62 .

於半導體晶圓W被保持部7之基座74自下方保持為水平姿勢後，40根鹵素燈HL一齊點亮而開始預加熱(輔助加熱)。自鹵素燈HL射出之鹵素光透過由石英所形成之下側腔室窗64及基座74自半導體晶圓W之下表面照射。藉由接受來自鹵素燈HL之光照射，半導體晶圓W被預加熱而溫度上升。再者，由於移載機構10之移載臂11已退避至凹部62之內側，故而不會妨礙鹵素燈HL之加熱。 After the semiconductor wafer W is held in a horizontal posture from below by the susceptor 74 of the holding portion 7, the 40 halogen lamps HL are lit together to start preheating (auxiliary heating). The halogen light emitted from the halogen lamp HL is irradiated from the lower surface of the semiconductor wafer W through the lower chamber window 64 and the susceptor 74 formed of quartz. By being irradiated with light from the halogen lamp HL, the semiconductor wafer W is preheated and the temperature rises. Furthermore, since the transfer arm 11 of the transfer mechanism 10 has been retracted to the inner side of the recess 62, the heating of the halogen lamp HL is not hindered.

於利用鹵素燈HL進行預加熱時，半導體晶圓W之溫度由下部輻射溫度計20測定。即，下部輻射溫度計20經由透明窗21接收自保持於基座74上之半導體晶圓W之下表面經由開口部78放射之紅外光而測定升溫中之晶圓溫度。所測得之半導體晶圓W之溫度被傳遞至控制部3。控制部3一面監視藉由來自鹵素燈HL之光照射而升溫之半導體晶圓W之溫度是否已達到規定之預加熱溫度T1，一面控制鹵素燈HL之輸出。即，控制部3根據由下部輻射溫度計20測得之測定值，以半導體晶圓W之溫度成為預加熱溫度 T1之方式對鹵素燈HL之輸出進行反饋控制。如此，下部輻射溫度計20亦為於預加熱階段用以控制鹵素燈HL之輸出的溫度感測器。將預加熱溫度T1設為添加至半導體晶圓W中之雜質無因熱而擴散之顧慮之600℃至800℃左右(於本實施方式中為700℃)。 During preheating with the halogen lamp HL, the temperature of the semiconductor wafer W is measured by the lower radiation thermometer 20 . That is, the lower radiation thermometer 20 receives infrared light radiated through the opening 78 from the lower surface of the semiconductor wafer W held on the susceptor 74 through the transparent window 21 to measure the temperature of the heating wafer. The measured temperature of the semiconductor wafer W is transmitted to the control unit 3 . The control unit 3 controls the output of the halogen lamp HL while monitoring whether the temperature of the semiconductor wafer W heated up by the light irradiation from the halogen lamp HL has reached a predetermined preheating temperature T1. That is, the control unit 3 uses the temperature of the semiconductor wafer W as the preheating temperature based on the measurement value measured by the lower radiation thermometer 20 . Feedback control is performed on the output of the halogen lamp HL by means of T1. In this way, the lower radiation thermometer 20 is also a temperature sensor for controlling the output of the halogen lamp HL in the preheating stage. The preheating temperature T1 is set to about 600° C. to 800° C. (in this embodiment, 700° C.) at which the impurities added to the semiconductor wafer W have no fear of diffusing by heat.

於半導體晶圓W之溫度達到預加熱溫度T1之後，控制部3將半導體晶圓W暫時維持在該預加熱溫度T1。具體而言，於由下部輻射溫度計20所測得之半導體晶圓W之溫度達到預加熱溫度T1之時間點，控制部3調整鹵素燈HL之輸出，將半導體晶圓W之溫度大致維持在預加熱溫度T1。 After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the control unit 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to maintain the temperature of the semiconductor wafer W substantially at the preheating temperature T1. Heating temperature T1.

藉由如此利用鹵素燈HL進行預加熱，而使半導體晶圓W整體均勻地升溫至預加熱溫度T1。於利用鹵素燈HL進行預加熱之階段，雖有較容易發生散熱之半導體晶圓W之周緣部之溫度比中央部低之傾向，但鹵素燈室4中之鹵素燈HL之配設密度為，與周緣部對向之區域者高於與半導體晶圓W之中央部對向之區域者。因此，照射至容易發生散熱之半導體晶圓W之周緣部之光量變多，能夠使預加熱階段之半導體晶圓W之面內溫度分佈變得均勻。 By preheating with the halogen lamp HL in this way, the entire semiconductor wafer W is heated up uniformly to the preheating temperature T1. In the stage of pre-heating with the halogen lamp HL, although the temperature of the peripheral portion of the semiconductor wafer W, where heat dissipation is more likely to occur, tends to be lower than that of the central portion, the arrangement density of the halogen lamps HL in the halogen lamp chamber 4 is: The area facing the peripheral portion is higher than the area facing the central portion of the semiconductor wafer W. FIG. Therefore, the amount of light irradiated to the peripheral portion of the semiconductor wafer W which is prone to heat dissipation increases, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.

於半導體晶圓W之溫度達到預加熱溫度T1後經過規定時間之時間點，閃光燈FL對半導體晶圓W之正面進行閃光照射。此時，自閃光燈FL放射之閃光之一部分直接射向處理腔室6內，其他部分一度被反射器52反射後射向處理腔室6內，藉由該等閃光之照射進行半導體晶圓W之閃光加熱。 At a time point when a predetermined time has elapsed after the temperature of the semiconductor wafer W reaches the preheating temperature T1 , the flash lamp FL irradiates the front surface of the semiconductor wafer W with flash light. At this time, a part of the flash light emitted from the flash lamp FL is directly emitted into the processing chamber 6, and the other part is once reflected by the reflector 52 and then emitted into the processing chamber 6, and the semiconductor wafer W is irradiated by the flash light. Flash heating.

閃光加熱係藉由來自閃光燈FL之閃光(flash light)照射而進行，故而能夠以短時間使半導體晶圓W之正面溫度上升。即，自閃光燈FL照射之閃光係將預先蓄積在電容器中之靜電能量轉換為極短之光脈衝、且照射時間為0.1毫秒以上100毫秒以下程度之極短之強閃光。並且，藉由來自閃光燈FL之閃光照射而被閃光加熱之半導體晶圓W之正面溫度瞬間上升至1000℃以上之處理溫度T2，將注入至半導體晶圓W中之雜質活化後，正面溫度急速下降。藉由上部輻射溫度計25測定閃光照射時半導體晶圓W之正面溫度。於閃光加熱中，能夠於極短時間內使半導體晶圓W之正面溫度升降，故而能夠一面抑制注入至半導體晶圓W中之雜質因熱而擴散、一面進行雜質之活化。再者，雜質之活化所需之時間與其熱擴散所需之時間相比極短，故而在0.1毫秒至100毫秒左右之不會發生擴散之短時間內即可完成活化。 Since the flash heating is performed by the irradiation of the flash light from the flash lamp FL, the front surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash irradiated from the flash lamp FL is an extremely short intense flash of about 0.1 milliseconds or more and 100 milliseconds or less by converting the electrostatic energy previously stored in the capacitor into extremely short light pulses. In addition, the front surface temperature of the semiconductor wafer W heated by the flash by the flash irradiation from the flash lamp FL instantly rises to the processing temperature T2 above 1000° C., and the front surface temperature drops rapidly after the impurity implanted into the semiconductor wafer W is activated. . The front surface temperature of the semiconductor wafer W at the time of flash irradiation was measured by the upper radiation thermometer 25 . In the flash heating, the temperature of the front surface of the semiconductor wafer W can be raised and lowered in an extremely short period of time, so that the impurity injected into the semiconductor wafer W can be suppressed from being diffused by heat and the impurities can be activated. Furthermore, the time required for the activation of impurities is extremely short compared to the time required for thermal diffusion, so the activation can be completed in a short time of about 0.1 millisecond to 100 milliseconds without diffusion.

於閃光加熱處理結束後經過規定時間後，鹵素燈HL熄滅。藉此，半導體晶圓W自預加熱溫度T1急速地降溫。降溫中之半導體晶圓W之溫度由下部輻射溫度計20予以測定，其測定結果被傳遞至控制部3。控制部3根據下部輻射溫度計20之測定結果，監視半導體晶圓W之溫度是否已降溫至規定溫度。然後，於半導體晶圓W之溫度已降溫至規定溫度以下後，移載機構10之一對移載臂11再次自退避位置水平移動至移載動作位置並上升，藉此頂起銷12自基座74之上表面突出而自基座74接收熱處理後之半導體晶圓W。繼而，開啟由閘閥185關閉之搬送開口部66，藉由搬送機器人150之搬送手151b(或搬送手151a)將載置於頂起銷12上之處理後之半導體 晶圓W搬出。搬送機器人150使搬送手151b進入至由頂起銷12頂起之半導體晶圓W之正下方位置並停止。然後，藉由一對移載臂11下降，將閃光加熱後之半導體晶圓W遞交並載置於搬送手151b上。然後，搬送機器人150使搬送手151b自處理腔室6退出而將處理後之半導體晶圓W搬出。 The halogen lamp HL is turned off after a predetermined time has elapsed after the completion of the flash heat treatment. Thereby, the temperature of the semiconductor wafer W is rapidly lowered from the preheating temperature T1. The temperature of the semiconductor wafer W under cooling is measured by the lower radiation thermometer 20 , and the measurement result is transmitted to the control unit 3 . The control unit 3 monitors whether or not the temperature of the semiconductor wafer W has dropped to a predetermined temperature based on the measurement result of the lower radiation thermometer 20 . Then, after the temperature of the semiconductor wafer W has dropped below the predetermined temperature, one pair of the transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer operation position again and rises, whereby the lift pins 12 are free The upper surface of the seat 74 protrudes to receive the heat-treated semiconductor wafer W from the base 74 . Next, the transfer opening 66 closed by the gate valve 185 is opened, and the processed semiconductor placed on the lift pins 12 is carried out by the transfer hand 151b (or the transfer hand 151a ) of the transfer robot 150 . Wafer W is carried out. The transfer robot 150 moves the transfer hand 151b to a position just below the semiconductor wafer W lifted up by the lift pins 12 and stops. Then, the pair of transfer arms 11 is lowered, and the semiconductor wafer W after the flash heating is handed over and placed on the transfer hand 151b. Then, the transfer robot 150 withdraws the transfer hand 151b from the processing chamber 6 to carry out the processed semiconductor wafer W.

其次，進一步詳細地說明半導體晶圓W之正面溫度之測定。半導體晶圓W之正面之溫度由上部輻射溫度計25予以測定。為了藉由上部輻射溫度計25測定半導體晶圓W之正面之溫度，需要將半導體晶圓W之正面之輻射率(自上部輻射溫度計25所觀察到之表觀輻射率)設定在上部輻射溫度計25中。典型而言，於成為製品之半導體晶圓W之正面形成有多層薄膜之情況較多。雖然上部輻射溫度計25之測定角度較淺，但當半導體晶圓W之正面積層有多層薄膜時，輻射率亦根據多層膜之狀態而變動。因此，於第1實施方式中，藉由如下方式測定半導體晶圓W之正面溫度。 Next, the measurement of the front surface temperature of the semiconductor wafer W will be described in more detail. The temperature of the front surface of the semiconductor wafer W is measured by the upper radiation thermometer 25 . In order to measure the temperature of the front surface of the semiconductor wafer W by the upper radiation thermometer 25 , the emissivity of the front surface of the semiconductor wafer W (apparent emissivity observed from the upper radiation thermometer 25 ) needs to be set in the upper radiation thermometer 25 . Typically, there are many cases where a multilayer thin film is formed on the front surface of the semiconductor wafer W to be a product. Although the measurement angle of the upper radiation thermometer 25 is shallow, when the front surface layer of the semiconductor wafer W has a multilayer thin film, the emissivity also varies depending on the state of the multilayer thin film. Therefore, in the first embodiment, the front surface temperature of the semiconductor wafer W is measured as follows.

圖11係表示第1實施方式之溫度測定順序之流程圖。第1實施方式中，於熱處理裝置100中對成為處理對象之半導體晶圓W開始處理之前，裝置之操作員自輸入部33設定並輸入各種資訊(步驟S11)。操作員輸入各種資訊之時機只要為於熱處理裝置100中開始處理半導體晶圓W之前之任意時間點即可，例如可為收容有半導體晶圓W之載具C被載置於裝載口110時。 FIG. 11 is a flowchart showing a temperature measurement procedure in the first embodiment. In the first embodiment, before the processing of the semiconductor wafer W to be processed in the thermal processing apparatus 100 is started, the operator of the apparatus sets and inputs various information from the input unit 33 (step S11 ). The timing for the operator to input various information may be any point in time before the processing of the semiconductor wafers W in the thermal processing apparatus 100 is started.

圖12係表示資訊輸入畫面之一例之圖。於本實施方式中，作為輸入部33及顯示部34，採用的是兼具兩者功能之觸控面板。圖12所示的是於 該觸控面板上顯示之輸入畫面之一例。操作員自圖12所示之輸入畫面輸入在半導體晶圓W之正面所形成之薄膜之膜資訊、半導體晶圓W本身之基板資訊、及與上部輻射溫度計25相關之裝置資訊。 FIG. 12 is a diagram showing an example of an information input screen. In this embodiment, as the input unit 33 and the display unit 34, a touch panel having both functions is used. Figure 12 shows the An example of the input screen displayed on the touch panel. The operator inputs film information of the thin film formed on the front surface of the semiconductor wafer W, substrate information of the semiconductor wafer W itself, and device information related to the upper radiation thermometer 25 from the input screen shown in FIG. 12 .

膜資訊中包含在半導體晶圓W之正面所形成之薄膜之膜種類、膜厚及層構成。具體而言，操作員自圖12之「層1」~「層4」各項輸入在半導體晶圓W之正面形成有多層之各薄膜之膜種類(類型)及膜厚(厚度)。又，操作員自「重複次數」一項輸入多層膜中之「層1」~「層4」之重複次數作為層構成。於圖12之例中，膜厚15nm之氮化矽(SiN)薄膜與膜厚15nm之二氧化矽(SiO2)薄膜交替地形成有4×25=100層。 The film information includes the film type, film thickness, and layer composition of the thin film formed on the front surface of the semiconductor wafer W. Specifically, the operator inputs the film type (type) and film thickness (thickness) of each thin film having multiple layers formed on the front surface of the semiconductor wafer W from “Layer 1” to “Layer 4” in FIG. 12 . In addition, the operator inputs the number of repetitions of "layer 1" to "layer 4" in the multilayer film as the layer configuration from the item "number of repetitions". In the example of FIG. 12 , a silicon nitride (SiN) film with a thickness of 15 nm and a silicon dioxide (SiO 2 ) film with a thickness of 15 nm are alternately formed to form 4×25=100 layers.

又，基板資訊中包含形成有多層膜之半導體晶圓W之基材之種類。具體而言，操作員自圖12之「基板」一項輸入半導體晶圓W之基材之種類。於圖12之例子中，輸入矽(Si)作為半導體晶圓W之基材之種類。 In addition, the substrate information includes the type of the base material of the semiconductor wafer W on which the multilayer film is formed. Specifically, the operator inputs the type of the base material of the semiconductor wafer W from the item "substrate" in FIG. 12 . In the example of FIG. 12 , silicon (Si) is input as the type of the substrate of the semiconductor wafer W. As shown in FIG.

進而，裝置資訊中包含上部輻射溫度計25之設置角度。上部輻射溫度計25之設置角度係上部輻射溫度計25之紅外線感測器29之光軸相對於半導體晶圓W之主面之法線所成之角度。具體而言，自圖12之「角度」一項輸入上部輻射溫度計25之設置角度。再者，由於上部輻射溫度計25之設置角度係裝置之固定參數，故而亦可設定為固定值而無需逐一輸入。 Furthermore, the installation angle of the upper radiation thermometer 25 is included in the device information. The installation angle of the upper radiation thermometer 25 is the angle formed by the optical axis of the infrared sensor 29 of the upper radiation thermometer 25 with respect to the normal line of the main surface of the semiconductor wafer W. Specifically, the installation angle of the upper radiation thermometer 25 is input from the item "Angle" in FIG. 12 . Furthermore, since the setting angle of the upper radiation thermometer 25 is a fixed parameter of the device, it can also be set as a fixed value without inputting one by one.

其次，控制部3之輻射率計算部32基於所設定並輸入之各種資訊計算半導體晶圓W之正面之輻射率(步驟S12)。具體而言，操作員選擇圖12之 「計算」，藉此輻射率計算部32基於所設定並輸入之各種資訊進行運算處理而計算半導體晶圓W之正面之輻射率。形成有薄膜之半導體晶圓W之反射率係基於上述各種資訊使用菲涅耳公式等公知之理論公式算出。輻射率計算部32藉由1減去所算出之反射率而計算半導體晶圓W之輻射率(將半導體晶圓W之透射率假定為0)。再者，於步驟S12中基於各種資訊所計算出之半導體晶圓W之正面之輻射率係自上部輻射溫度計25之設置角度所觀察到之表觀輻射率。又，於步驟S12中，計算至少包含上部輻射溫度計25之測定波長區域5μm~6.5μm在內之波長區域之半導體晶圓W之正面之光譜輻射率。 Next, the emissivity calculation unit 32 of the control unit 3 calculates the emissivity of the front surface of the semiconductor wafer W based on the set and input various information (step S12 ). Specifically, the operator selects the "Calculate", whereby the emissivity calculation unit 32 calculates the emissivity of the front surface of the semiconductor wafer W by performing arithmetic processing based on the various information set and input. The reflectance of the semiconductor wafer W on which the thin film is formed is calculated using a known theoretical formula such as the Fresnel formula based on the above-mentioned various information. The emissivity calculation unit 32 calculates the emissivity of the semiconductor wafer W by subtracting the calculated reflectance from 1 (the transmittance of the semiconductor wafer W is assumed to be 0). Furthermore, the emissivity of the front surface of the semiconductor wafer W calculated based on various information in step S12 is the apparent emissivity observed from the installation angle of the upper radiation thermometer 25 . In addition, in step S12, the spectral radiance of the front surface of the semiconductor wafer W in the wavelength region including at least the measurement wavelength region 5 μm to 6.5 μm of the upper radiation thermometer 25 is calculated.

其次，輻射率計算部32計算步驟S12中所求出之半導體晶圓W之正面之輻射率之加權平均值(步驟S13)。圖13係表示步驟S12中所求出之半導體晶圓W之正面之光譜輻射率之一例之圖。圖14係表示上部輻射溫度計25之感度分佈之圖。如圖14所示，上部輻射溫度計25之測定波長區域5μm~6.5μm中，波長6μm~6.5μm之感度比波長5μm~6μm之感度低。即，於利用上部輻射溫度計25進行溫度測定時，5μm~6μm之波長區域更重要。因此，輻射率計算部32基於如圖14所示之上部輻射溫度計25之感度分佈來修正圖13所示之光譜輻射率。結果，求出如圖15所示之修正後之半導體晶圓W之正面之光譜輻射率。輻射率計算部32根據圖15所示之修正後之光譜輻射率計算上部輻射溫度計25之測定波長區域5μm~6.5μm之平均值。即，輻射率計算部32基於上部輻射溫度計25之感度分佈計算半導體晶圓W之正面之輻射率之加權平均值。 Next, the emissivity calculation unit 32 calculates the weighted average value of the emissivity of the front surface of the semiconductor wafer W obtained in step S12 (step S13 ). FIG. 13 is a diagram showing an example of the spectral radiance of the front surface of the semiconductor wafer W obtained in step S12. FIG. 14 is a diagram showing the sensitivity distribution of the upper radiation thermometer 25 . As shown in FIG. 14 , in the measurement wavelength region of the upper radiation thermometer 25 of 5 μm to 6.5 μm, the sensitivity of the wavelength of 6 μm to 6.5 μm is lower than the sensitivity of the wavelength of 5 μm to 6 μm. That is, when the temperature is measured by the upper radiation thermometer 25, the wavelength region of 5 μm to 6 μm is more important. Therefore, the radiance calculation unit 32 corrects the spectral radiance shown in FIG. 13 based on the sensitivity distribution of the upper radiation thermometer 25 shown in FIG. 14 . As a result, the spectral radiance of the front surface of the semiconductor wafer W after correction as shown in FIG. 15 was obtained. The emissivity calculation part 32 calculates the average value of the measurement wavelength region 5 μm to 6.5 μm of the upper radiation thermometer 25 based on the corrected spectral emissivity shown in FIG. 15 . That is, the emissivity calculation unit 32 calculates the weighted average value of the emissivity of the front surface of the semiconductor wafer W based on the sensitivity distribution of the upper radiation thermometer 25 .

然後，利用上部輻射溫度計25執行半導體晶圓W之正面之溫度測定(步驟S14)。此時，將步驟S13中所計算出之半導體晶圓W之正面之輻射率之加權平均值設定在上部輻射溫度計25中。上部輻射溫度計25使用該輻射率之加權平均值測定藉由閃光照射進行加熱之半導體晶圓W之正面溫度。 Then, the temperature measurement of the front surface of the semiconductor wafer W is performed using the upper radiation thermometer 25 (step S14). At this time, the weighted average value of the emissivity of the front surface of the semiconductor wafer W calculated in step S13 is set in the upper radiation thermometer 25 . The upper radiation thermometer 25 measures the front surface temperature of the semiconductor wafer W heated by flash irradiation using the weighted average value of the radiance.

於第1實施方式中，設定並輸入在半導體晶圓W之正面所形成之薄膜之膜資訊、半導體晶圓W之基板資訊、及上部輻射溫度計25之設置角度，基於上述各種資訊求出形成有多層膜之半導體晶圓W之正面之正確之輻射率。該輻射率係自上部輻射溫度計25所觀察到之表觀輻射率。然後，上部輻射溫度計25使用所求出之輻射率來測定藉由閃光照射進行加熱之半導體晶圓W之正面之溫度。由於上部輻射溫度計25係使用基於膜資訊等而正確地計算出之輻射率來進行溫度測定，故而即便形成有多層薄膜，亦能夠正確地測定半導體晶圓W之溫度。結果，能夠正確地測定閃光照射時半導體晶圓W之正面之最高達到溫度(處理溫度T2)。 In the first embodiment, the film information of the thin film formed on the front surface of the semiconductor wafer W, the substrate information of the semiconductor wafer W, and the installation angle of the upper radiation thermometer 25 are set and input, and based on the above-mentioned various information, the formed area is obtained. The correct emissivity of the front side of the semiconductor wafer W of the multilayer film. The emissivity is the apparent emissivity observed from the upper radiation thermometer 25 . Then, the upper radiation thermometer 25 uses the obtained emissivity to measure the temperature of the front surface of the semiconductor wafer W heated by flash irradiation. Since the upper radiation thermometer 25 uses the emissivity accurately calculated based on the film information and the like to measure the temperature, the temperature of the semiconductor wafer W can be accurately measured even if a multilayer thin film is formed. As a result, the maximum temperature (processing temperature T2 ) of the front surface of the semiconductor wafer W at the time of flash irradiation can be accurately measured.

又，係基於上部輻射溫度計25之感度分佈求出半導體晶圓W之正面之輻射率之加權平均值，且上部輻射溫度計25使用該加權平均值進行溫度測定。因此，上部輻射溫度計25能夠更正確地測定半導體晶圓W之正面溫度。 In addition, the weighted average value of the emissivity of the front surface of the semiconductor wafer W is obtained based on the sensitivity distribution of the upper radiation thermometer 25 , and the upper radiation thermometer 25 performs temperature measurement using the weighted average value. Therefore, the upper radiation thermometer 25 can measure the front surface temperature of the semiconductor wafer W more accurately.

<第2實施方式> <Second Embodiment>

其次，對本發明之第2實施方式進行說明。第2實施方式之熱處理裝 置之構成與第1實施方式相同。又，第2實施方式中之半導體晶圓W之處理順序亦與第1實施方式相同。第2實施方式與第1實施方式之不同之處在於半導體晶圓W之輻射率之計算方法。 Next, a second embodiment of the present invention will be described. Heat treatment equipment of the second embodiment The configuration is the same as that of the first embodiment. In addition, the processing procedure of the semiconductor wafer W in the second embodiment is also the same as that in the first embodiment. The second embodiment is different from the first embodiment in the calculation method of the emissivity of the semiconductor wafer W. FIG.

圖16係表示第2實施方式之溫度測定順序之流程圖。第2實施方式中，於半導體晶圓W之溫度測定之前，創建表示半導體晶圓W之反射率與膜資訊之相關關係之資料庫DB(圖10)。具體而言，藉由模擬分別求出在矽半導體基板上形成有各種膜種類及膜厚之薄膜時之反射率。然後，將所求出之反射率與作為模擬條件而設定之薄膜之膜種類及膜厚彼此建立關聯地登記於資料庫DB中。所創建之資料庫DB被儲存於作為控制部3之記憶部之磁碟35中。將複數個薄膜之膜種類及膜厚與反射率彼此建立關聯地登記於資料庫DB中。 FIG. 16 is a flowchart showing a temperature measurement procedure in the second embodiment. In the second embodiment, before the temperature measurement of the semiconductor wafer W, a database DB ( FIG. 10 ) showing the correlation between the reflectance of the semiconductor wafer W and the film information is created. Specifically, the reflectance when thin films of various film types and film thicknesses are formed on a silicon semiconductor substrate is obtained by simulation. Then, the obtained reflectance and the film type and film thickness of the thin film set as simulation conditions are associated with each other and registered in the database DB. The created database DB is stored in the disk 35 serving as the memory portion of the control portion 3 . The film types, film thicknesses, and reflectances of the plurality of thin films are registered in the database DB in association with each other.

於第2實施方式中，測定成為處理對象之半導體晶圓W之反射率(步驟S21)。如上所述，為了調整朝向，而將成為處理對象之半導體晶圓W搬入至對準部230之對準腔室231中。於對準腔室231中，半導體晶圓W由旋轉支持部237支持。自反射率測定部232之投光部300射出之光被半反射鏡236反射而以0°入射角照射至半導體晶圓W之正面。自投光部300照射之光在半導體晶圓W之正面反射，該反射光透過半反射鏡236被受光部235接收。控制部3之反射率計算部31藉由受光部235所接收之來自半導體晶圓W之反射光之強度除以投光部300所照射之光之強度而算出半導體晶圓W之正面之反射率。再者，亦可一面藉由旋轉馬達238使由旋轉支持部237支持之半導體晶圓W旋轉一面測定該半導體晶圓W之反射率。 In the second embodiment, the reflectance of the semiconductor wafer W to be processed is measured (step S21 ). As described above, in order to adjust the orientation, the semiconductor wafer W to be processed is carried into the alignment chamber 231 of the alignment unit 230 . In the alignment chamber 231 , the semiconductor wafer W is supported by the rotation support portion 237 . The light emitted from the light projecting unit 300 of the reflectance measuring unit 232 is reflected by the half mirror 236 and irradiated to the front surface of the semiconductor wafer W at an incident angle of 0°. The light irradiated from the light projecting portion 300 is reflected on the front surface of the semiconductor wafer W, and the reflected light is received by the light receiving portion 235 through the half mirror 236 . The reflectance calculation unit 31 of the control unit 3 calculates the reflectance of the front surface of the semiconductor wafer W by dividing the intensity of the reflected light from the semiconductor wafer W received by the light receiving unit 235 by the intensity of the light irradiated by the light projecting unit 300 . . Furthermore, the reflectance of the semiconductor wafer W may be measured while the semiconductor wafer W supported by the rotation support portion 237 is rotated by the rotation motor 238 .

其次，控制部3之特定部36基於步驟S21中所測得之半導體晶圓W之反射率來特定出膜資訊(步驟S22)。具體而言，特定部36自資料庫DB中提取與步驟S21中所測得之反射率建立有對應關係之膜種類及膜厚。如此特定出之膜種類及膜厚係形成於半導體晶圓W上之薄膜之膜種類及膜厚。 Next, the specifying unit 36 of the control unit 3 specifies the film ejection information based on the reflectivity of the semiconductor wafer W measured in the step S21 (step S22 ). Specifically, the specifying unit 36 extracts, from the database DB, the type and thickness of the film that have a corresponding relationship with the reflectance measured in step S21. The film type and film thickness specified in this way are the film type and film thickness of the thin film formed on the semiconductor wafer W.

與第1實施方式同樣地設定並輸入薄膜之膜種類及膜厚以外之各種資訊。即，由操作員自輸入部33設定並輸入半導體晶圓W之基板資訊、上部輻射溫度計25之設置角度、及薄膜之層構成。 Various information other than the film type and film thickness of the thin film is set and input in the same manner as in the first embodiment. That is, the operator sets and inputs the substrate information of the semiconductor wafer W, the installation angle of the upper radiation thermometer 25 , and the layer configuration of the thin film from the input unit 33 .

以下之步驟S23~步驟S25之順序與第1實施方式中之步驟S12~步驟S14之順序相同。首先，控制器3之輻射率計算部32基於包含步驟S22中所特定出之膜資訊之各種資訊計算半導體晶圓W之正面之輻射率(步驟S23)。再者，雖然步驟S21中測定出了半導體晶圓W之正面之反射率，但由於該反射率係可見光區域之反射率，故而與上部輻射溫度計25之測定波長區域(5μm~6.5μm)之反射率不同。因此，僅僅藉由1減去步驟S21中所測得之反射率並無法求出上部輻射溫度計25之測定波長區域之輻射率。故而，與第1實施方式同樣地，基於包含薄膜之膜資訊之各種資訊來計算半導體晶圓W之正面之輻射率。 The sequence of the following steps S23 to S25 is the same as the sequence of the steps S12 to S14 in the first embodiment. First, the emissivity calculation section 32 of the controller 3 calculates the emissivity of the front surface of the semiconductor wafer W based on various information including the film information specified in step S22 (step S23). Furthermore, although the reflectance of the front surface of the semiconductor wafer W is measured in step S21, since the reflectance is the reflectance in the visible light region, it is different from the reflectance in the measurement wavelength region (5 μm to 6.5 μm) of the upper radiation thermometer 25 . rate is different. Therefore, the emissivity in the measurement wavelength region of the upper radiation thermometer 25 cannot be obtained only by subtracting the reflectance measured in step S21 from 1. Therefore, as in the first embodiment, the emissivity of the front surface of the semiconductor wafer W is calculated based on various information including film information of the thin film.

其次，輻射率計算部32計算半導體晶圓W之正面之輻射率之加權平均值(步驟S24)。此處，與第1實施方式同樣地，輻射率計算部32基於上部輻射溫度計25之感度分佈來計算半導體晶圓W之正面之輻射率之加權平均 值。然後，利用上部輻射溫度計25執行半導體晶圓W之正面之溫度測定(步驟S25)。 Next, the emissivity calculation unit 32 calculates the weighted average value of the emissivity of the front surface of the semiconductor wafer W (step S24). Here, similarly to the first embodiment, the emissivity calculation unit 32 calculates the weighted average of the emissivity of the front surface of the semiconductor wafer W based on the sensitivity distribution of the upper radiation thermometer 25 value. Then, the temperature measurement of the front surface of the semiconductor wafer W is performed using the upper radiation thermometer 25 (step S25).

於第2實施方式中，並不輸入在半導體晶圓W之正面所形成之薄膜之膜種類及膜厚，而是根據半導體晶圓W之反射率來進行特定。然後，基於包含所特定出之膜種類及膜厚之各種資訊求出形成有多層膜之半導體晶圓W之正面之正確之輻射率。上部輻射溫度計25使用所求出之輻射率來測定藉由閃光照射進行加熱之半導體晶圓W之正面之溫度。與第1實施方式同樣地，上部輻射溫度計25係使用基於膜資訊等而正確地計算出之輻射率來進行溫度測定，故而即便形成有多層薄膜，亦能夠正確地測定半導體晶圓W之溫度。結果，能夠正確地測定閃光照射時半導體晶圓W之正面之最高達到溫度(處理溫度T2)。 In the second embodiment, the film type and film thickness of the thin film formed on the front surface of the semiconductor wafer W are not input, but are specified according to the reflectance of the semiconductor wafer W. Then, based on various information including the specified film type and film thickness, the correct emissivity of the front surface of the semiconductor wafer W on which the multilayer film is formed is obtained. The upper radiation thermometer 25 measures the temperature of the front surface of the semiconductor wafer W heated by flash irradiation using the obtained emissivity. As in the first embodiment, the upper radiation thermometer 25 performs temperature measurement using the emissivity that is accurately calculated based on film information and the like, so even if a multilayer thin film is formed, the temperature of the semiconductor wafer W can be accurately measured. As a result, the maximum temperature (processing temperature T2 ) of the front surface of the semiconductor wafer W at the time of flash irradiation can be accurately measured.

<第3實施方式> <Third Embodiment>

其次，對本發明之第3實施方式進行說明。第3實施方式之熱處理裝置之構成與第1實施方式相同。又，第3實施方式中之半導體晶圓W之處理順序亦與第1實施方式相同。於第3實施方式中，使用第1實施方式或者第2實施方式中所求出之輻射率於閃光照射前預測半導體晶圓W之正面之最高達到溫度。 Next, a third embodiment of the present invention will be described. The configuration of the heat treatment apparatus of the third embodiment is the same as that of the first embodiment. In addition, the processing procedure of the semiconductor wafer W in the third embodiment is also the same as that in the first embodiment. In the third embodiment, the maximum attained temperature of the front surface of the semiconductor wafer W is predicted before flash irradiation using the emissivity obtained in the first embodiment or the second embodiment.

閃光照射時半導體晶圓W之正面之最高達到溫度與對閃光燈FL施加之電壓相關。將第1實施方式或者第2實施方式中所求出之正確之輻射率設定在上部輻射溫度計25中，藉由上部輻射溫度計25來測定對閃光燈FL施 加某種模式之電壓而照射閃光時半導體晶圓W之正面之最高達到溫度。藉此，預先求出對閃光燈FL施加之電壓與閃光照射時半導體晶圓W之正面之最高達到溫度之相關關係。 The maximum attained temperature of the front surface of the semiconductor wafer W during flash irradiation is related to the voltage applied to the flash lamp FL. The correct emissivity obtained in the first embodiment or the second embodiment is set in the upper radiation thermometer 25, and the upper radiation thermometer 25 is used to measure the application to the flash lamp FL. The maximum temperature of the front surface of the semiconductor wafer W is reached when a certain mode of voltage is applied to irradiate the flash. Thereby, the correlation between the voltage applied to the flash lamp FL and the maximum temperature reached at the front surface of the semiconductor wafer W at the time of flash irradiation is obtained in advance.

於半導體晶圓W之處理時，針對每個晶圓規定了對閃光燈FL施加之電壓。控制部3之溫度預測部39基於該施加電壓與上述相關關係來預測閃光照射時半導體晶圓W之正面之最高達到溫度。藉由已被設定第1實施方式或第2實施方式中所求出之正確之輻射率之上部輻射溫度計25所獲得之半導體晶圓W之實測溫度與預測溫度表現出良好之匹配性。 During processing of the semiconductor wafers W, the voltage to be applied to the flash lamp FL is specified for each wafer. The temperature predicting unit 39 of the control unit 3 predicts the highest temperature reached on the front surface of the semiconductor wafer W during flash irradiation based on the applied voltage and the above-described correlation. The measured temperature and the predicted temperature of the semiconductor wafer W obtained by the upper radiation thermometer 25 having been set to the correct emissivity obtained in the first embodiment or the second embodiment show a good match.

<變化例> <Variation example>

以上，對本發明之實施方式進行了說明，但本發明能夠於不脫離其主旨之範圍內進行上述以外之各種變更。例如，於上述實施方式中，係計算自上部輻射溫度計25所觀察到之半導體晶圓W之正面之輻射率，但亦可計算自下部輻射溫度計20所觀察到之半導體晶圓W之背面之輻射率。於該情形時，基於在半導體晶圓W之背面所形成之薄膜之膜資訊、半導體晶圓W之基板資訊、及與下部輻射溫度計20之設置角度相關之各種資訊求出半導體晶圓W之背面之輻射率。雖然與半導體晶圓W之正面相比，背面形成有多層薄膜之情況較少，但藉由與上述實施方式同樣地求出半導體晶圓W之背面之輻射率，並將該輻射率設定在下部輻射溫度計20中，能夠藉由下部輻射溫度計20正確地測定半導體晶圓W之背面之溫度。 As mentioned above, although embodiment of this invention was described, this invention can make various changes other than the above in the range which does not deviate from the summary. For example, in the above embodiment, the emissivity of the front side of the semiconductor wafer W observed from the upper radiation thermometer 25 is calculated, but the radiation from the back side of the semiconductor wafer W observed from the lower radiation thermometer 20 can also be calculated Rate. In this case, the back surface of the semiconductor wafer W is obtained based on the film information of the thin film formed on the back surface of the semiconductor wafer W, the substrate information of the semiconductor wafer W, and various information related to the installation angle of the lower radiation thermometer 20 . the radiation rate. Compared with the front surface of the semiconductor wafer W, the back surface is rarely formed with a multilayer thin film, but the emissivity of the back surface of the semiconductor wafer W is obtained in the same manner as in the above-mentioned embodiment, and the emissivity is set to the lower part. In the radiation thermometer 20 , the temperature of the back surface of the semiconductor wafer W can be accurately measured by the lower radiation thermometer 20 .

又，於上述實施方式中，係基於上部輻射溫度計25之感度分佈求出 半導體晶圓W之正面之輻射率之加權平均值，但加權平均並非必需，亦可直接使用基於各種資訊所計算出之半導體晶圓W之輻射率來進行溫度測定。即便於不使用加權平均值之情形時，亦會根據所求出之半導體晶圓W之輻射率計算出上部輻射溫度計25之測定波長區域5μm~6.5μm之平均值並將其設定在上部輻射溫度計25中。如此亦能夠使用基於包含膜資訊等之各種資訊所計算出之輻射率來正確地測定半導體晶圓W之正面溫度。然而，如上述實施方式般，基於上部輻射溫度計25之感度分佈求出半導體晶圓W之正面之輻射率之加權平均值並將該加權平均值設定在上部輻射溫度計25中的話，能夠更正確地測定半導體晶圓W之正面溫度。 In addition, in the above-mentioned embodiment, it is calculated based on the sensitivity distribution of the upper radiation thermometer 25 The weighted average of the emissivity of the front surface of the semiconductor wafer W, but the weighted average is not necessary, and the emissivity of the semiconductor wafer W calculated based on various information can be directly used for temperature measurement. Even when the weighted average value is not used, the average value of the measurement wavelength range of 5 μm to 6.5 μm of the upper radiation thermometer 25 is calculated based on the obtained emissivity of the semiconductor wafer W and set in the upper radiation thermometer. 25. In this way, the front surface temperature of the semiconductor wafer W can be accurately measured using the emissivity calculated based on various information including film information and the like. However, as in the above-described embodiment, if the weighted average value of the emissivity of the front surface of the semiconductor wafer W is obtained based on the sensitivity distribution of the upper radiation thermometer 25 and the weighted average value is set in the upper radiation thermometer 25, it is possible to more accurately The front surface temperature of the semiconductor wafer W is measured.

又，於上述實施方式中，閃光燈室5中具備30根閃光燈FL，但並不限於此，閃光燈FL之根數可設為任意數量。又，閃光燈FL並不限於氙氣閃光燈，亦可為氪氣閃光燈。又，鹵素燈室4所具備之鹵素燈HL之根數亦不限於40根，可設為任意數量。 In addition, in the above-described embodiment, the flash chamber 5 includes 30 flash lamps FL, but the present invention is not limited to this, and the number of flash lamps FL may be set to any number. In addition, the flash FL is not limited to a xenon flash, and may be a krypton flash. In addition, the number of the halogen lamps HL provided in the halogen lamp chamber 4 is not limited to 40, and can be set to any number.

又，於上述實施方式中，使用燈絲方式之鹵素燈HL作為連續發光1秒以上之連續點亮燈進行半導體晶圓W之預加熱，但並不限於此，亦可使用放電型之電弧燈(例如氙弧燈)代替鹵素燈HL作為連續點亮燈進行預加熱。 In addition, in the above-mentioned embodiment, the preheating of the semiconductor wafer W is performed using the halogen lamp HL of the filament type as the continuous lighting lamp that continuously emits light for 1 second or more, but it is not limited to this, and a discharge type arc lamp ( For example, a xenon arc lamp) is used for preheating as a continuous lighting lamp instead of the halogen lamp HL.

又，被熱處理裝置100作為處理對象之基板並不限於半導體晶圓，亦可為用於液晶顯示裝置等平板顯示器之玻璃基板或太陽能電池用基板。 In addition, the substrate to be processed by the thermal processing apparatus 100 is not limited to a semiconductor wafer, and may be a glass substrate or a solar cell substrate used for a flat panel display such as a liquid crystal display device.

Claims (5)

一種熱處理方法，其特徵在於：其係藉由對基板照射閃光而加熱該基板者，且具備：輻射率計算步驟，其基於形成於基板上之薄膜相關之膜資訊、上述基板相關之基板資訊、及對上述基板之溫度進行測定之輻射溫度計之設置角度，計算自上述輻射溫度計所觀察到之上述基板之輻射率；及溫度測定步驟，其將上述輻射率計算步驟中計算出之上述輻射率設定於上述輻射溫度計，以上述輻射溫度計測定藉由閃光照射予以加熱後之上述基板之溫度。 A heat treatment method, characterized in that: it heats the substrate by irradiating a flash light on the substrate, and comprising: an emissivity calculation step based on film information related to a thin film formed on the substrate, substrate information related to the substrate, and the setting angle of the radiation thermometer for measuring the temperature of the above-mentioned substrate, and calculate the emissivity of the above-mentioned substrate observed from the above-mentioned radiation thermometer; and a temperature measurement step, which sets the above-mentioned emissivity calculated in the above-mentioned emissivity calculation step. The temperature of the above-mentioned substrate after being heated by flash irradiation was measured with the above-mentioned radiation thermometer. 如請求項1之熱處理方法，其中上述膜資訊包含上述薄膜之膜種類、膜厚及層構成，上述基板資訊包含上述基板之種類。 The heat treatment method according to claim 1, wherein the film information includes the film type, film thickness and layer structure of the thin film, and the substrate information includes the type of the substrate. 如請求項1之熱處理方法，其更具備：設定並輸入上述膜資訊及上述基板資訊之輸入步驟。 The heat treatment method according to claim 1, further comprising: an input step of setting and inputting the above-mentioned film information and the above-mentioned substrate information. 如請求項1之熱處理方法，其具備：反射率測定步驟，其測定上述基板之反射率；及特定步驟，其基於上述基板之反射率而特定出上述膜資訊。 The heat treatment method of claim 1, comprising: a reflectance measuring step of measuring the reflectance of the substrate; and a specifying step of specifying the film information based on the reflectance of the substrate. 如請求項1至4中任一項之熱處理方法，其中 於上述輻射率計算步驟中，基於上述輻射溫度計之感度分佈而計算上述基板之輻射率之加權平均值。 The heat treatment method of any one of claims 1 to 4, wherein In the emissivity calculation step, the weighted average value of the emissivity of the substrate is calculated based on the sensitivity distribution of the radiation thermometer.
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