JP7304151B2 - Heat treatment method and heat treatment apparatus - Google Patents

Description

The present invention relates to a heat treatment method and a heat treatment apparatus for heating a thin precision electronic substrate such as a semiconductor wafer (hereinafter simply referred to as "substrate") by irradiating the substrate with flash light.

Flash lamp annealing (FLA), which heats a semiconductor wafer in an extremely short time, has attracted attention in the manufacturing process of semiconductor devices. Flash lamp annealing uses a xenon flash lamp (hereinafter simply referred to as a "flash lamp" to mean a xenon flash lamp) to irradiate the surface of the semiconductor wafer with flash light, so that only the surface of the semiconductor wafer is extremely annealed. It is a heat treatment technology that raises the temperature in a short time (several milliseconds or less).

The radiation spectral distribution of the xenon flash lamp is from the ultraviolet region to the near-infrared region, the wavelength is shorter than that of the conventional halogen lamp, and it almost matches the fundamental absorption band of the silicon semiconductor wafer. Therefore, when the semiconductor wafer is irradiated with flash light from the xenon flash lamp, it is possible to rapidly raise the temperature of the semiconductor wafer with little transmitted light. In addition, it has been found that only the vicinity of the surface of the semiconductor wafer can be selectively heated by flash light irradiation for a very short period of several milliseconds or less.

Such flash lamp annealing is used in processes that require very short heating times, such as activation of impurities typically implanted in semiconductor wafers. By irradiating the surface of a semiconductor wafer into which impurities have been implanted by ion implantation with flash light from a flash lamp, the surface of the semiconductor wafer can be heated to the activation temperature for a very short period of time, and the impurities can be deeply diffused. Therefore, only impurity activation can be performed without causing the activation of the impurities.

In general, in an apparatus for processing semiconductor wafers, a desired process is executed by a controller controlling various components of the apparatus in accordance with a recipe that defines processing procedures and processing conditions. Patent Literature 1 discloses that in a flash lamp annealing apparatus as well, a control unit controls each component of the apparatus based on a recipe to perform heat treatment on a semiconductor wafer.

Therefore, in flash heat treatment of semiconductor wafers, it is necessary to select and set a recipe that allows appropriate treatment to be performed. Specifically, it is necessary to set a recipe of processing conditions such that the surface of the semiconductor wafer reaches the target temperature just enough during flash light irradiation. Conventionally, flash heat treatment is actually performed on a semiconductor wafer on a trial basis using at least two types of recipes, and the surface temperature of the semiconductor wafer is measured to set the recipe for optimum treatment conditions. was

JP 2009-231652 A

However, in the conventional recipe setting method described above, the optimal conditions are determined by trial and error, so it may be necessary to perform flash heat treatment on the semiconductor wafer as a test many times using a large number of recipes. there were. In addition, since such a method greatly depends on the experience and skill of the operator, inexperienced operators have had to perform more flash heat treatments.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a heat treatment method and a heat treatment apparatus capable of easily setting heat treatment conditions.

In order to solve the above-mentioned problems, the invention of claim 1 provides a heat treatment method for heating a substrate by irradiating the substrate with flash light, in which a recipe defining a treatment procedure and treatment conditions is set for the substrate to be treated. a recipe setting step, a reflectance measurement step of measuring the reflectance of the substrate, a flash lamp discharge voltage and flash light irradiation time specified in the recipe set in the recipe setting step, and the reflectance measurement step A temperature calculation step of calculating the temperature of the substrate during heat treatment based on the reflectance measured in the reflectance measured in the reflectance measurement step and the reflectance set in the recipe setting step and a display step of displaying the recipe and the temperature of the substrate calculated in the temperature calculation step side by side.

According to a second aspect of the present invention, there is provided a heat treatment method for heating a substrate by irradiating the substrate with flash light, wherein the reflectance measurement step of measuring the reflectance of the substrate to be processed, the reflectance, the processing procedure and the A recipe and a temperature profile of the substrate corresponding to the reflectance measured in the reflectance measurement step are extracted from a database in which recipes defining processing conditions and a temperature profile indicating temperature changes of the substrate during heat treatment are associated with each other. The method is characterized by comprising an extraction step and a display step of displaying the recipe extracted in the extraction step and the temperature profile of the substrate.

Further, according to the invention of claim 3, in the heat treatment method according to the invention of claim 2, the processing conditions of the substrate to be processed are set based on the recipe extracted in the extraction step and the temperature profile of the substrate. It is characterized by further comprising a step.

According to a fourth aspect of the present invention, there is provided a heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, comprising: a chamber containing a substrate to be processed; an input unit for receiving settings of a recipe defining a processing procedure and processing conditions for the substrate; a reflectance measuring unit for measuring the reflectance of the substrate; and a recipe set by the input unit. a temperature calculating unit for calculating the temperature of the substrate during heat treatment based on the prescribed discharge voltage of the flash lamp, the irradiation time of the flash light, and the reflectance measured by the reflectance measuring unit; A display section for displaying side by side the reflectance measured by the rate measuring section, the recipe set by the input section, and the temperature of the substrate calculated by the temperature calculation section.

According to a fifth aspect of the present invention, there is provided a heat treatment apparatus for heating a substrate by irradiating the substrate with flash light, comprising: a chamber containing a substrate to be processed; a flash lamp that irradiates the substrate, a reflectance measurement unit that measures the reflectance of the substrate, a recipe that defines the reflectance, the processing procedure and processing conditions , and a temperature profile that indicates the temperature change of the substrate during the heat treatment. an extraction unit for extracting from the database a recipe and substrate temperature profile corresponding to the reflectance measured by the reflectance measurement unit; and a recipe and substrate temperature profile extracted by the extraction unit. and a display for displaying the temperature profile .

Further, according to the invention of claim 6 , in the heat treatment apparatus according to the invention of claim 5 , a setting unit for setting processing conditions for the substrate to be processed based on the recipe extracted by the extraction unit and the temperature profile of the substrate. is further provided.

According to the invention of claim 1, in order to calculate and display the temperature of the substrate during the heat treatment based on the recipe set in the recipe setting step and the reflectance measured in the reflectance measurement step, The processing conditions can be set with reference to the predicted temperature, and the heat treatment conditions can be easily set.

According to the inventions of claims 2 and 3, the recipe and substrate temperature profile corresponding to the measured reflectance are extracted from the database, and the recipe and substrate temperature profile are displayed. It is possible to set the processing conditions by using the heat treatment method, and it is possible to easily set the heat treatment conditions.

According to the fourth aspect of the invention, the temperature of the substrate during heat treatment is calculated based on the recipe set by the input unit and the reflectance measured by the reflectance measurement unit, and displayed on the display unit. , the processing conditions can be set with reference to the predicted temperature, and the heat treatment conditions can be easily set.

According to the fifth and sixth aspects of the present invention, the recipe and substrate temperature profile corresponding to the reflectance measured by the reflectance measuring section are extracted from the database, and the recipe and substrate temperature profile are displayed on the display section. Therefore, the processing conditions can be set based on the past results, and the heat treatment conditions can be easily set.

1 is a plan view showing a heat treatment apparatus according to the present invention; FIG. FIG. 2 is a front view of the heat treatment apparatus of FIG. 1; It is a longitudinal cross-sectional view which shows the structure of a heat processing part. It is a perspective view which shows the whole external appearance of a holding|maintenance part. 4 is a plan view of the susceptor; FIG. 4 is a cross-sectional view of the susceptor; FIG. It is a top view of a transfer mechanism. It is a side view of a transfer mechanism. FIG. 4 is a plan view showing the arrangement of a plurality of halogen lamps; 4 is a diagram showing the configuration of a reflectance measurement section and a control section; FIG. 4 is a flow chart showing a procedure for calculating a predicted reaching temperature of a semiconductor wafer in the first embodiment; It is a figure which shows an example of the display screen displayed on a display part. It is a block diagram which shows the structure of the control part of 2nd Embodiment. 9 is a flow chart showing a procedure for obtaining a predicted temperature to be reached for a semiconductor wafer in the second embodiment; FIG. 12 is a block diagram showing the configuration of a control unit according to the third embodiment; FIG. 10 is a flow chart showing a procedure for setting processing conditions for semiconductor wafers in the third embodiment.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

<First embodiment>
First, the overall configuration of the heat treatment apparatus according to the present invention will be described. FIG. 1 is a plan view showing a heat treatment apparatus 100 according to the present invention, and FIG. 2 is a front view thereof. The heat treatment apparatus 100 is a flash lamp annealing apparatus that irradiates a disk-shaped semiconductor wafer W as a substrate with flash light to heat the semiconductor wafer W. As shown in FIG. Although the size of the semiconductor wafer W to be processed is not particularly limited, it is, for example, φ300 mm or φ450 mm. Impurities are implanted into the semiconductor wafer W before it is carried into the heat treatment apparatus 100, and the implanted impurities are activated by heat treatment by the heat treatment apparatus 100. FIG. In addition, in FIG. 1 and subsequent figures, the dimensions and numbers of each part are exaggerated or simplified as necessary for easy understanding. 1 to 3, in order to clarify their directional relationship, an XYZ orthogonal coordinate system is attached in which the Z-axis direction is the vertical direction and the XY plane is the horizontal plane.

As shown in FIGS. 1 and 2, the heat treatment apparatus 100 includes an indexer section 101 for loading unprocessed semiconductor wafers W into the apparatus from the outside and unloading processed semiconductor wafers W from the apparatus. alignment section 230 for positioning the semiconductor wafer W, two cooling sections 130 and 140 for cooling the semiconductor wafer W after heat treatment, a heat treatment section 160 for performing flash heat treatment on the semiconductor wafer W, cooling sections 130 and 140, and A transfer robot 150 is provided for transferring the semiconductor wafer W to and from the heat treatment section 160 . The heat treatment apparatus 100 also includes a control unit 3 that controls the operation mechanism and the transfer robot 150 provided in each of the processing units described above to proceed with the flash heat treatment of the semiconductor wafer W. FIG.

The indexer unit 101 includes a load port 110 on which a plurality of carriers C (two in this embodiment) are placed side by side, an unprocessed semiconductor wafer W taken out from each carrier C, and a processed semiconductor wafer loaded onto each carrier C. and a delivery robot 120 for storing W. A carrier C containing unprocessed semiconductor wafers W is transported by an automatic guided vehicle (AGV, OHT) or the like and placed on a load port 110, while a carrier C containing processed semiconductor wafers W is transported by an automatic guided vehicle. is carried away from the load port 110 by the .

In the load port 110, the carrier C is configured to move up and down as indicated by the arrow CU in FIG. ing. In addition to a FOUP (front opening unified pod) in which the semiconductor wafers W are stored in a closed space, the carrier C may be a SMIF (Standard Mechanical Interface) pod or an OC (open pod) in which the stored semiconductor wafers W are exposed to the outside air. cassette).

In addition, the delivery robot 120 is capable of sliding movement as indicated by the arrow 120S in FIG. 1, and turning and ascending/descending movements as indicated by the arrow 120R. As a result, the delivery robot 120 takes the semiconductor wafers W into and out of the two carriers C and delivers the semiconductor wafers W to the alignment section 230 and the two cooling sections 130 and 140 . The transfer robot 120 takes the semiconductor wafer W into and out of the carrier C by sliding the hand 121 and moving the carrier C up and down. The transfer of the semiconductor wafer W between the delivery robot 120 and the alignment unit 230 or the cooling units 130 and 140 is performed by sliding the hand 121 and lifting the delivery robot 120 .

The alignment section 230 is provided to be connected to the side of the indexer section 101 along the Y-axis direction. The alignment section 230 is a processing section that rotates the semiconductor wafer W in a horizontal plane to orient it appropriately for flash heating. The alignment unit 230 includes a mechanism (a rotation support unit 237 and a rotation motor 238 in FIG. 10) for horizontally supporting and rotating the semiconductor wafer W inside an alignment chamber 231, which is a housing made of aluminum alloy, and a semiconductor wafer W. A mechanism for optically detecting notches, orientation flats, and the like formed on the peripheral edge of the wafer W is provided. Further, the alignment chamber 231 is provided with a reflectance measuring section 232 for measuring the reflectance of the surface of the semiconductor wafer W supported therein. The reflectance measuring unit 232 irradiates the surface of the semiconductor wafer W with light, receives the reflected light reflected by the surface, and measures the reflectance of the surface of the semiconductor wafer W from the intensity of the reflected light.

The transfer robot 120 transfers the semiconductor wafer W to the alignment unit 230 . The semiconductor wafer W is transferred from the transfer robot 120 to the alignment chamber 231 so that the center of the wafer is positioned at a predetermined position. The alignment unit 230 rotates the semiconductor wafer W received from the indexer unit 101 around the vertical axis with the central portion of the semiconductor wafer W as the rotation center, and adjusts the orientation of the semiconductor wafer W by optically detecting a notch or the like. do. Also, the reflectance measuring unit 232 measures the reflectance of the surface of the semiconductor wafer W. FIG. The semiconductor wafer W whose orientation has been adjusted is taken out from the alignment chamber 231 by the delivery robot 120 .

A transfer chamber 170 that accommodates the transfer robot 150 is provided as a transfer space for the semiconductor wafer W by the transfer robot 150 . The processing chamber 6 of the heat treatment section 160 , the first cool chamber 131 of the cooling section 130 , and the second cool chamber 141 of the cooling section 140 are connected to three sides of the transfer chamber 170 .

The thermal processing unit 160, which is the main part of the thermal processing apparatus 100, is a substrate processing unit that irradiates the preheated semiconductor wafer W with flash light (flash light) from the xenon flash lamps FL to perform flash heating processing. The configuration of the thermal processing section 160 will be further described later.

The two cooling units 130, 140 have substantially the same configuration. The cooling units 130 and 140 respectively include a metal cooling plate and a quartz plate placed on the upper surface of the first cool chamber 131 and the second cool chamber 141, which are aluminum alloy housings. (both not shown). The cooling plate is temperature-controlled to room temperature (approximately 23° C.) by a Peltier element or constant temperature water circulation. The semiconductor wafer W subjected to the flash heat treatment in the heat treatment section 160 is carried into the first cool chamber 131 or the second cool chamber 141 and placed on the quartz plate to be cooled.

Both the first cool chamber 131 and the second cool chamber 141 are connected to both the indexer section 101 and the transfer chamber 170 between them. The first cool chamber 131 and the second cool chamber 141 are formed with two openings through which the semiconductor wafer W is carried in and out. Of the two openings of the first cool chamber 131 , the opening connected to the indexer section 101 can be opened and closed by a gate valve 181 . On the other hand, the opening connected to the transfer chamber 170 of the first cool chamber 131 can be opened and closed by a gate valve 183 . That is, the first cool chamber 131 and the indexer section 101 are connected through the gate valve 181 , and the first cool chamber 131 and the transfer chamber 170 are connected through the gate valve 183 .

When transferring the semiconductor wafer W between the indexer section 101 and the first cool chamber 131, the gate valve 181 is opened. Further, when transferring the semiconductor wafer W between the first cool chamber 131 and the transfer chamber 170, the gate valve 183 is opened. When the gate valve 181 and the gate valve 183 are closed, the inside of the first cool chamber 131 becomes a closed space.

The opening connected to the indexer section 101 of the two openings of the second cool chamber 141 can be opened and closed by a gate valve 182 . On the other hand, the opening connected to the transfer chamber 170 of the second cool chamber 141 can be opened and closed by a gate valve 184 . That is, the second cool chamber 141 and the indexer section 101 are connected through the gate valve 182 , and the second cool chamber 141 and the transfer chamber 170 are connected through the gate valve 184 .

When transferring the semiconductor wafer W between the indexer section 101 and the second cool chamber 141, the gate valve 182 is opened. Further, when transferring the semiconductor wafer W between the second cool chamber 141 and the transfer chamber 170, the gate valve 184 is opened. When the gate valve 182 and the gate valve 184 are closed, the inside of the second cool chamber 141 becomes a closed space.

Furthermore, the cooling units 130 and 140 respectively include a gas supply mechanism for supplying clean nitrogen gas to the first cool chamber 131 and the second cool chamber 141 and an exhaust mechanism for exhausting the atmosphere in the chambers. These gas supply mechanism and exhaust mechanism may be capable of switching the flow rate in two stages.

The transfer robot 150 provided in the transfer chamber 170 is rotatable about a vertical axis as indicated by an arrow 150R. The transfer robot 150 has two link mechanisms consisting of a plurality of arm segments, and transfer hands 151a and 151b for holding semiconductor wafers W are provided at the ends of these two link mechanisms, respectively. These transfer hands 151a and 151b are vertically arranged with a predetermined pitch therebetween, and are linearly slidable in the same horizontal direction independently by a link mechanism. In addition, the transport robot 150 vertically moves the two transport hands 151a and 151b while keeping them separated by a predetermined pitch by vertically moving the base on which the two link mechanisms are provided.

When the transfer robot 150 transfers (inserts and removes) the semiconductor wafer W to and from the first cool chamber 131, the second cool chamber 141, or the processing chamber 6 of the heat treatment section 160, first, both transfer hands 151a and 151b are It turns so as to face the transfer partner, and after that (or while it is turning) it moves up and down to a height where one of the transfer hands transfers the semiconductor wafer W to the transfer partner. Then, the transfer hand 151a (151b) is linearly slid in the horizontal direction to transfer the semiconductor wafer W to the transfer partner.

Transfer of the semiconductor wafer W between the transfer robot 150 and the transfer robot 120 can be performed via the cooling units 130 and 140 . That is, the first cool chamber 131 of the cooling unit 130 and the second cool chamber 141 of the cooling unit 140 also function as paths for transferring the semiconductor wafer W between the transfer robot 150 and the delivery robot 120. . Specifically, the transfer of the semiconductor wafer W is performed by one of the transfer robot 150 and the transfer robot 120 receiving the semiconductor wafer W transferred to the first cool chamber 131 or the second cool chamber 141 by the other. The transfer robot 150 and the delivery robot 120 constitute a transfer mechanism for transferring the semiconductor wafer W from the carrier C to the heat treatment section 160 .

As described above, gate valves 181 and 182 are provided between the first cool chamber 131 and the second cool chamber 141 and the indexer section 101, respectively. Gate valves 183 and 184 are provided between the transfer chamber 170 and the first cool chamber 131 and the second cool chamber 141, respectively. Furthermore, a gate valve 185 is provided between the transfer chamber 170 and the processing chamber 6 of the thermal processing section 160 . When the semiconductor wafer W is transported within the heat treatment apparatus 100, these gate valves are appropriately opened and closed. Nitrogen gas is also supplied to the transfer chamber 170 and the alignment chamber 231 from the gas supply unit, and the atmosphere inside them is exhausted by the exhaust unit (not shown).

Next, the configuration of the thermal processing section 160 will be described. FIG. 3 is a vertical cross-sectional view showing the structure of the thermal processing section 160. As shown in FIG. The heat treatment section 160 includes a processing chamber 6 for housing a semiconductor wafer W and performing heat treatment, a flash lamp house 5 containing a plurality of flash lamps FL, and a halogen lamp house 4 containing a plurality of halogen lamps HL. Prepare. A flash lamp house 5 is provided on the upper side of the processing chamber 6, and a halogen lamp house 4 is provided on the lower side. The thermal processing unit 160 also includes a holding unit 7 that holds the semiconductor wafer W in a horizontal posture inside the processing chamber 6, and a transfer mechanism 10 that transfers the semiconductor wafer W between the holding unit 7 and the transfer robot 150. And prepare.

The processing chamber 6 is configured by mounting chamber windows made of quartz on the upper and lower sides of a cylindrical chamber side portion 61 . The chamber side part 61 has a substantially cylindrical shape with upper and lower openings, the upper opening being closed by an upper chamber window 63, and the lower opening being closed by a lower chamber window 64. ing. The upper chamber window 63 that forms the ceiling of the processing chamber 6 is a disk-shaped member made of quartz and functions as a quartz window that transmits flash light emitted from the flash lamp FL into the processing chamber 6 . The lower chamber window 64 forming the floor of the processing chamber 6 is also a disk-shaped member made of quartz and functions as a quartz window through which the light from the halogen lamp HL is transmitted into the processing chamber 6 .

A reflecting ring 68 is attached to the upper portion of the inner wall surface of the chamber side portion 61, and a reflecting ring 69 is attached to the lower portion thereof. Both the reflecting rings 68 and 69 are formed in an annular shape. The upper reflector ring 68 is attached by fitting from the upper side of the chamber side 61 . On the other hand, the lower reflecting ring 69 is attached by fitting from the lower side of the chamber side portion 61 and fastening with screws (not shown). That is, both the reflecting rings 68 and 69 are detachably attached to the chamber side portion 61 . A space inside the processing chamber 6 , ie, a space surrounded by the upper chamber window 63 , the lower chamber window 64 , the chamber side portion 61 and the reflective rings 68 and 69 is defined as a thermal processing space 65 .

A concave portion 62 is formed in the inner wall surface of the processing chamber 6 by attaching the reflecting rings 68 and 69 to the chamber side portion 61 . That is, the recess 62 is formed by the central portion of the inner wall surface of the chamber side portion 61 where the reflecting rings 68 and 69 are not attached, the lower end surface of the reflecting ring 68, and the upper end surface of the reflecting ring 69. . The concave portion 62 is formed in an annular shape along the horizontal direction on the inner wall surface of the processing chamber 6 and surrounds the holding portion 7 that holds the semiconductor wafer W. As shown in FIG. The chamber side portion 61 and the reflecting rings 68, 69 are made of a metallic material (for example, stainless steel) having excellent strength and heat resistance.

A transfer opening (furnace port) 66 for transferring the semiconductor wafer W into and out of the processing chamber 6 is formed in the chamber side portion 61 . The transport opening 66 can be opened and closed by a gate valve 185 . The conveying opening 66 is communicated with the outer peripheral surface of the recess 62 . Therefore, when the gate valve 185 opens the transfer opening 66 , the semiconductor wafer W can be transferred from the transfer opening 66 to the heat treatment space 65 through the recess 62 and transferred from the heat treatment space 65 . It can be performed. Further, when the gate valve 185 closes the transfer opening 66, the heat processing space 65 in the processing chamber 6 becomes a closed space.

A gas supply hole 81 for supplying a processing gas to the heat processing space 65 is formed in the upper portion of the inner wall of the processing chamber 6 . The gas supply hole 81 is formed above the recess 62 and may be provided in the reflection ring 68 . The gas supply hole 81 is communicated with a gas supply pipe 83 through an annular buffer space 82 formed inside the side wall of the processing chamber 6 . The gas supply pipe 83 is connected to a process gas supply source 85 . A valve 84 is inserted in the middle of the path of the gas supply pipe 83 . When valve 84 is opened, process gas is delivered from process gas supply 85 to buffer space 82 . The processing gas that has flowed into the buffer space 82 flows so as to expand in the buffer space 82 having a smaller fluid resistance than the gas supply hole 81 and is supplied from the gas supply hole 81 into the heat treatment space 65 . As the processing gas, an inert gas such as nitrogen (N ₂ ) or a reactive gas such as hydrogen (H ₂ ) or ammonia (NH ₃ ) can be used (nitrogen in this embodiment).

On the other hand, a gas exhaust hole 86 for exhausting the gas in the heat treatment space 65 is formed in the lower inner wall of the processing chamber 6 . The gas exhaust hole 86 is formed below the recess 62 and may be provided in the reflecting ring 69 . The gas exhaust hole 86 is communicated with a gas exhaust pipe 88 through an annular buffer space 87 formed inside the side wall of the processing chamber 6 . The gas exhaust pipe 88 is connected to an exhaust mechanism 190 . A valve 89 is inserted in the middle of the path of the gas exhaust pipe 88 . When the valve 89 is opened, the gas in the heat treatment space 65 is discharged from the gas exhaust hole 86 to the gas exhaust pipe 88 through the buffer space 87 . A plurality of gas supply holes 81 and gas exhaust holes 86 may be provided along the circumferential direction of the processing chamber 6, or may be slit-shaped. Further, the processing gas supply source 85 and the exhaust mechanism 190 may be mechanisms provided in the heat treatment apparatus 100, or may be utilities of the factory where the heat treatment apparatus 100 is installed.

A gas exhaust pipe 191 for exhausting the gas in the heat treatment space 65 is also connected to the tip of the transfer opening 66 . A gas exhaust pipe 191 is connected to an exhaust mechanism 190 via a valve 192 . By opening the valve 192 , gases within the processing chamber 6 are exhausted through the transfer opening 66 .

FIG. 4 is a perspective view showing the overall appearance of the holding portion 7. As shown in FIG. The holding portion 7 includes a base ring 71 , a connecting portion 72 and a susceptor 74 . The base ring 71, the connecting portion 72 and the susceptor 74 are all made of quartz. That is, the entire holding portion 7 is made of quartz.

The base ring 71 is an arc-shaped quartz member that is partly missing from an annular ring. This missing portion is provided to prevent interference between the transfer arm 11 of the transfer mechanism 10 and the base ring 71, which will be described later. By placing the base ring 71 on the bottom surface of the recess 62, the base ring 71 is supported by the wall surface of the processing chamber 6 (see FIG. 3). A plurality of connecting portions 72 (four in this embodiment) are erected on the upper surface of the base ring 71 along the circumferential direction of the annular shape. The connecting portion 72 is also a quartz member and is fixed to the base ring 71 by welding.

The susceptor 74 is supported by four connecting portions 72 provided on the base ring 71 . FIG. 5 is a plan view of the susceptor 74. FIG. 6 is a cross-sectional view of the susceptor 74. As shown in FIG. The susceptor 74 comprises a retaining plate 75 , a guide ring 76 and a plurality of substrate support pins 77 . The holding plate 75 is a substantially circular flat member made of quartz. The diameter of the holding plate 75 is larger than the diameter of the semiconductor wafer W. That is, the holding plate 75 has a planar size larger than the semiconductor wafer W. As shown in FIG.

A guide ring 76 is installed on the peripheral edge of the upper surface of the holding plate 75 . The guide ring 76 is an annular member having an inner diameter larger than the diameter of the semiconductor wafer W. As shown in FIG. For example, when the diameter of the semiconductor wafer W is φ300 mm, the inner diameter of the guide ring 76 is φ320 mm. The inner circumference of the guide ring 76 is tapered such that it widens upward from the holding plate 75 . The guide ring 76 is made of quartz similar to the holding plate 75 . The guide ring 76 may be welded to the upper surface of the holding plate 75, or may be fixed to the holding plate 75 by a separately processed pin or the like. Alternatively, the holding plate 75 and the guide ring 76 may be processed as an integral member.

A region of the upper surface of the holding plate 75 inside the guide ring 76 serves as a planar holding surface 75a for holding the semiconductor wafer W. As shown in FIG. A plurality of substrate support pins 77 are erected on the holding surface 75 a of the holding plate 75 . In this embodiment, a total of 12 substrate support pins 77 are erected at 30° intervals along a circle concentric with the outer circumference of the holding surface 75a (the inner circumference of the guide ring 76). The diameter of the circle in which the 12 substrate support pins 77 are arranged (the distance between the opposing substrate support pins 77) is smaller than the diameter of the semiconductor wafer W. 270 mm in shape). Each substrate support pin 77 is made of quartz. The plurality of substrate support pins 77 may be provided on the upper surface of the holding plate 75 by welding, or may be processed integrally with the holding plate 75 .

Returning to FIG. 4, the four connecting portions 72 erected on the base ring 71 and the peripheral portion of the holding plate 75 of the susceptor 74 are fixed by welding. That is, the susceptor 74 and the base ring 71 are fixedly connected by the connecting portion 72 . The holder 7 is attached to the processing chamber 6 by supporting the base ring 71 of the holder 7 on the wall surface of the processing chamber 6 . When the holding part 7 is attached to the processing chamber 6, the holding plate 75 of the susceptor 74 is in a horizontal posture (a posture in which the normal line is aligned with the vertical direction). That is, the holding surface 75a of the holding plate 75 becomes a horizontal surface.

The semiconductor wafer W loaded into the processing chamber 6 is placed and held in a horizontal position on the susceptor 74 of the holding section 7 mounted in the processing chamber 6 . At this time, the semiconductor wafer W is held by the susceptor 74 while being supported by 12 substrate support pins 77 erected on the holding plate 75 . More strictly, the upper ends of the 12 substrate support pins 77 are in contact with the lower surface of the semiconductor wafer W to support the semiconductor wafer W. As shown in FIG. Since the height of the 12 substrate support pins 77 (the distance from the upper end of the substrate support pin 77 to the holding surface 75a of the holding plate 75) is uniform, the semiconductor wafer W can be horizontally positioned by the 12 substrate support pins 77. can support.

Also, the semiconductor wafer W is supported by a plurality of substrate support pins 77 at a predetermined distance from the holding surface 75a of the holding plate 75. As shown in FIG. The thickness of the guide ring 76 is greater than the height of the board support pins 77 . Accordingly, the guide ring 76 prevents the semiconductor wafer W supported by the plurality of substrate support pins 77 from being displaced in the horizontal direction.

Further, as shown in FIGS. 4 and 5, the holding plate 75 of the susceptor 74 is formed with an opening 78 penetrating vertically. The opening 78 is provided so that the lower radiation thermometer 20 (see FIG. 3) receives radiation light (infrared light) emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 . That is, the lower radiation thermometer 20 measures the temperature of the semiconductor wafer W by receiving light emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78 . Further, the holding plate 75 of the susceptor 74 is formed with four through holes 79 through which the lift pins 12 of the transfer mechanism 10 (to be described later) penetrate to transfer the semiconductor wafer W. As shown in FIG.

FIG. 7 is a plan view of the transfer mechanism 10. FIG. 8 is a side view of the transfer mechanism 10. FIG. The transfer mechanism 10 includes two transfer arms 11 . The transfer arm 11 has an arc shape along the generally annular concave portion 62 . Two lift pins 12 are erected on each transfer arm 11 . Each transfer arm 11 is rotatable by a horizontal movement mechanism 13 . The horizontal movement mechanism 13 moves the pair of transfer arms 11 to the transfer operation position (solid line position in FIG. It is horizontally moved to and from the retracted position (the two-dot chain line position in FIG. 7) that does not overlap in plan view. The transfer operation position is below the susceptor 74 and the retracted position is outside the susceptor 74 . As the horizontal movement mechanism 13, each transfer arm 11 may be rotated by an individual motor. It may be something that moves.

Also, the pair of transfer arms 11 is vertically moved together with the horizontal movement mechanism 13 by the lifting mechanism 14 . When the lifting mechanism 14 lifts the pair of transfer arms 11 to the transfer operation position, a total of four lift pins 12 pass through the through holes 79 (see FIGS. 4 and 5) drilled in the susceptor 74, and the lift pins 12 protrudes from the upper surface of the susceptor 74 . On the other hand, when the lifting mechanism 14 lowers the pair of transfer arms 11 to the transfer operation position and removes the lift pins 12 from the through-holes 79, the horizontal movement mechanism 13 moves the pair of transfer arms 11 so as to open them. The transfer arm 11 moves to the retracted position. The retracted position of the pair of transfer arms 11 is directly above the base ring 71 of the holding section 7 . Since the base ring 71 is placed on the bottom surface of the recess 62 , the retracted position of the transfer arm 11 is inside the recess 62 . An exhaust mechanism (not shown) is also provided in the vicinity of the portion where the drive section (horizontal movement mechanism 13 and lifting mechanism 14) of the transfer mechanism 10 is provided, and the atmosphere around the drive section of the transfer mechanism 10 is is discharged to the outside of the processing chamber 6 .

Returning to FIG. 3, the processing chamber 6 is provided with two radiation thermometers, an upper radiation thermometer 25 and a lower radiation thermometer 20 . As described above, the lower radiation thermometer 20 receives infrared light emitted from the lower surface of the semiconductor wafer W through the opening 78 of the susceptor 74, and determines the temperature of the semiconductor wafer W from the intensity of the infrared light. Measure. On the other hand, the upper radiation thermometer 25 receives infrared light emitted from the upper surface of the semiconductor wafer W held by the susceptor 74 and measures the temperature of the upper surface of the semiconductor wafer W from the intensity of the infrared light. As the upper radiation thermometer 25, it is preferable to use a high-speed radiation thermometer so as to be able to follow the temperature change of the upper surface of the semiconductor wafer W, which changes rapidly during flash light irradiation.

The flash lamp house 5 provided above the processing chamber 6 has, inside a housing 51, a light source composed of a plurality of (30 in this embodiment) xenon flash lamps FL and a light source covering the light source. and a reflector 52 provided. A lamp light radiation window 53 is attached to the bottom of the housing 51 of the flash lamp house 5 . The lamp light emission window 53 forming the floor of the flash lamp house 5 is a plate-shaped quartz window made of quartz. By installing the flash lamp house 5 above the processing chamber 6 , the lamp light emission window 53 faces the upper chamber window 63 . The flash lamp FL irradiates the heat treatment space 65 with flash light from above the processing chamber 6 through the lamp light emission window 53 and the upper chamber window 63 .

Each of the plurality of flash lamps FL is a rod-shaped lamp having an elongated cylindrical shape, and the longitudinal direction of each flash lamp FL is along the main surface of the semiconductor wafer W held by the holding portion 7 (that is, along the horizontal direction). They are arranged in a plane so as to be parallel to each other. Therefore, the plane formed by the arrangement of the flash lamps FL is also a horizontal plane.

The xenon flash lamp FL is composed of a rod-shaped glass tube (discharge tube) in which xenon gas is filled and an anode and a cathode connected to a condenser are arranged at both ends of the tube (discharge tube), and an outer peripheral surface of the glass tube is provided. and a trigger electrode. Since xenon gas is an electrical insulator, electricity does not flow in the glass tube under normal conditions even if electric charges are accumulated in the capacitor. However, when a high voltage is applied to the trigger electrode to break down the insulation, the electricity stored in the capacitor instantly flows into the glass tube, and light is emitted by the excitation of xenon atoms or molecules at that time. In such a xenon flash lamp FL, the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse of 0.1 millisecond to 100 milliseconds. It has the characteristic of being able to irradiate extremely strong light compared to the light source. That is, the flash lamp FL is a pulsed light emitting lamp that instantaneously emits light in an extremely short time of less than 1 second. The light emission time of the flash lamp FL can be adjusted by the coil constant of the lamp power source that supplies power to the flash lamp FL.

Moreover, the reflector 52 is provided above the plurality of flash lamps FL so as to cover them as a whole. The basic function of the reflector 52 is to reflect the flash light emitted from the plurality of flash lamps FL to the heat treatment space 65 side. The reflector 52 is made of an aluminum alloy plate, and its surface (the surface facing the flash lamp FL) is roughened by blasting.

A halogen lamp house 4 provided below the processing chamber 6 incorporates a plurality of (40 in this embodiment) halogen lamps HL inside a housing 41 . A plurality of halogen lamps HL irradiate the heat treatment space 65 from below the treatment chamber 6 through the lower chamber window 64 .

FIG. 9 is a plan view showing the arrangement of multiple halogen lamps HL. In this embodiment, 20 halogen lamps HL are arranged in each of the upper and lower two stages. Each halogen lamp HL is a rod-shaped lamp having an elongated cylindrical shape. The 20 halogen lamps HL in both the upper stage and the lower stage are arranged such that their longitudinal directions are parallel to each other along the main surface of the semiconductor wafer W held by the holding portion 7 (that is, along the horizontal direction). there is Therefore, the plane formed by the arrangement of the halogen lamps HL in both the upper stage and the lower stage is a horizontal plane.

Further, as shown in FIG. 9, the density of the halogen lamps HL in both the upper and lower stages is higher in the region facing the peripheral portion than in the region facing the central portion of the semiconductor wafer W held by the holding portion 7. there is That is, in both the upper and lower stages, the arrangement pitch of the halogen lamps HL is shorter in the peripheral portion than in the central portion of the lamp arrangement. Therefore, it is possible to irradiate a larger amount of light to the peripheral portion of the semiconductor wafer W, which tends to cause a temperature drop during heating by light irradiation from the halogen lamp HL.

A group of halogen lamps HL in the upper stage and a group of halogen lamps HL in the lower stage are arranged so as to cross each other in a grid pattern. That is, a total of 40 halogen lamps HL are arranged so that the longitudinal direction of each halogen lamp HL in the upper stage is orthogonal to the longitudinal direction of each halogen lamp HL in the lower stage.

The halogen lamp HL is a filament-type light source that emits light by turning the filament incandescent by energizing the filament arranged inside the glass tube. Inside the glass tube, a gas obtained by introducing a small amount of a halogen element (iodine, bromine, etc.) into an inert gas such as nitrogen or argon is sealed. By introducing a halogen element, it becomes possible to set the temperature of the filament to a high temperature while suppressing breakage of the filament. Therefore, the halogen lamp HL has characteristics that it has a longer life than a normal incandescent lamp and can continuously irradiate strong light. That is, the halogen lamp HL is a continuous lighting lamp that continuously emits light for at least one second. Further, since the halogen lamp HL is a rod-shaped lamp, it has a long life. By arranging the halogen lamp HL along the horizontal direction, the radiation efficiency to the semiconductor wafer W above is excellent.

A reflector 43 is also provided below the two-tiered halogen lamps HL in the housing 41 of the halogen lamp house 4 (FIG. 3). The reflector 43 reflects the light emitted from the plurality of halogen lamps HL to the heat treatment space 65 side.

In addition to the above configuration, the thermal processing section 160 prevents excessive temperature rise of the halogen lamp house 4, the flash lamp house 5, and the processing chamber 6 due to thermal energy generated from the halogen lamps HL and the flash lamps FL during the thermal processing of the semiconductor wafer W. Therefore, it has various cooling structures. For example, the wall of the processing chamber 6 is provided with water cooling pipes (not shown). Further, the halogen lamp house 4 and the flash lamp house 5 have an air-cooling structure in which heat is exhausted by forming a gas flow inside. Air is also supplied to the gap between the upper chamber window 63 and the lamp light emission window 53 to cool the flash lamp house 5 and the upper chamber window 63 .

FIG. 10 is a diagram showing the configuration of the reflectance measurement section 232 and the control section 3 provided in the alignment section 230. As shown in FIG. The reflectance measurement section 232 includes a light projection section 300 , a light reception section 235 , a half mirror 236 and a reflectance calculation section 31 . In the alignment chamber 231 of the alignment section 230, a rotation support portion 237 that supports and rotates the semiconductor wafer W and a rotation motor 238 that rotates the rotation support portion 237 are provided. The orientation of the semiconductor wafer W is adjusted by rotating the rotation support portion 237 that supports the semiconductor wafer W with the rotation motor 238 .

The light projecting unit 300 includes a light source such as a halogen light source or an LED light source, and emits light for reflectance measurement. The light receiving section 235 has a light receiving element that converts the intensity of the received light into an electric signal. The light emitted from the light projecting section 300 is reflected by the half mirror 236 and vertically radiated onto the upper surface of the semiconductor wafer W supported by the rotation support section 237 . The light emitted from the light projecting part 300 is reflected by the upper surface of the semiconductor wafer W. As shown in FIG. The reflected light passes through the half mirror 236 and is received by the light receiving section 235 . The reflectance calculator 31 of the controller 3 calculates the reflectance of the upper surface of the semiconductor wafer W based on the intensity of the reflected light received by the light receiver 235 . The light projecting unit 300 may include a plurality of light sources emitting light in different wavelength ranges, or may irradiate a plurality of locations on the upper surface of the semiconductor wafer W with light. If the light projecting section 300 has a plurality of light sources with different wavelength ranges, the reflectance of the semiconductor wafer W can be measured over a wide range of wavelengths. In addition, by irradiating light onto a plurality of locations on the upper surface of the semiconductor wafer W, local pattern dependency can be reduced.

The control unit 3 controls the various operating mechanisms provided in the heat treatment apparatus 100 . The hardware configuration of the control unit 3 is the same as that of a general computer. That is, the control unit 3 includes a CPU that is a circuit that performs various arithmetic processing, a ROM that is a read-only memory that stores basic programs, a RAM that is a readable and writable memory that stores various information, and control software and data. Equipped with a magnetic disk for storage. The processing in the heat treatment apparatus 100 proceeds as the CPU of the control unit 3 executes a predetermined processing program. The reflectance calculation unit 31 and the temperature calculation unit 36 are functional processing units realized by the CPU of the control unit 3 executing a predetermined processing program. Details of the processing performed by the temperature calculator 36 will be further described later. Although FIG. 1 shows the control unit 3 within the indexer unit 101 , the control unit 3 is not limited to this, and the control unit 3 can be arranged at any position within the heat treatment apparatus 100 .

A display unit 34 and an input unit 33 are also connected to the control unit 3 . The control unit 3 displays various information on the display unit 34 . An operator of the heat treatment apparatus 100 can input various commands and parameters from the input section 33 while confirming the information displayed on the display section 34 . As the input unit 33, for example, a keyboard or a mouse can be used. As the display unit 34, for example, a liquid crystal display can be used. In the present embodiment, as the display unit 34 and the input unit 33, a liquid crystal touch panel provided on the outer wall of the heat treatment apparatus 100 is employed to provide both functions.

Next, the processing operation of the heat treatment apparatus 100 according to the present invention will be described. Here, first, a typical processing operation for a normal semiconductor wafer (product wafer) W as a product will be described. A semiconductor wafer W to be processed is a semiconductor substrate to which impurities (ions) are added by an ion implantation method. Activation of the impurity is performed by flash light irradiation heat treatment (annealing) by the heat treatment apparatus 100 .

First, a plurality of unprocessed semiconductor wafers W into which impurities are implanted are placed on the load port 110 of the indexer section 101 in a state in which they are housed in a carrier C. As shown in FIG. Then, the delivery robot 120 takes out the unprocessed semiconductor wafers W one by one from the carrier C and carries them into the alignment chamber 231 of the alignment section 230 . In the alignment chamber 231, the semiconductor wafer W supported by the rotary support portion 237 is rotated around the vertical axis in a horizontal plane with its center as the center of rotation. to adjust.

Next, the transfer robot 120 of the indexer section 101 takes out the semiconductor wafer W whose orientation has been adjusted from the alignment chamber 231 and carries it into the first cool chamber 131 of the cooling section 130 or the second cool chamber 141 of the cooling section 140 . The unprocessed semiconductor wafer W carried into the first cool chamber 131 or the second cool chamber 141 is carried out to the carrier chamber 170 by the carrier robot 150 . When the unprocessed semiconductor wafer W is transferred from the indexer section 101 to the transfer chamber 170 via the first cool chamber 131 or the second cool chamber 141, the first cool chamber 131 and the second cool chamber 141 are kept in contact with the semiconductor wafer W. It acts as a path for the passing of

The transfer robot 150 that has taken out the semiconductor wafer W turns to face the heat treatment section 160 . Subsequently, the gate valve 185 opens the space between the processing chamber 6 and the transfer chamber 170 , and the transfer robot 150 loads the unprocessed semiconductor wafer W into the processing chamber 6 . At this time, if a preceding heat-treated semiconductor wafer W exists in the processing chamber 6, one of the transfer hands 151a and 151b takes out the heat-treated semiconductor wafer W, and then removes the untreated semiconductor wafer W. W is carried into the processing chamber 6 and the wafers are exchanged. The gate valve 185 then closes between the processing chamber 6 and the transfer chamber 170 .

The semiconductor wafer W loaded into the processing chamber 6 is preheated by the halogen lamps HL, and then flash heat-treated by flash light irradiation from the flash lamps FL. The impurities implanted into the semiconductor wafer W are activated by this flash heat treatment.

After the flash heat treatment is finished, the gate valve 185 opens the space between the processing chamber 6 and the transfer chamber 170 again, and the transfer robot 150 unloads the semiconductor wafer W after the flash heat treatment from the process chamber 6 to the transfer chamber 170. . The transfer robot 150 that has taken out the semiconductor wafer W turns from the processing chamber 6 toward the first cool chamber 131 or the second cool chamber 141 . A gate valve 185 also closes between the processing chamber 6 and the transfer chamber 170 .

After that, the transfer robot 150 carries the heat-treated semiconductor wafer W into the first cool chamber 131 of the cooling section 130 or the second cool chamber 141 of the cooling section 140 . At this time, if the semiconductor wafer W has passed through the first cool chamber 131 before the heat treatment, it is carried into the first cool chamber 131 after the heat treatment, and passed through the second cool chamber 141 before the heat treatment. If so, it is carried into the second cool chamber 141 even after the heat treatment. In the first cool chamber 131 or the second cool chamber 141, the semiconductor wafer W after the flash heat treatment is cooled. Since the temperature of the entire semiconductor wafer W is relatively high when it is unloaded from the processing chamber 6 of the thermal processing section 160, it is cooled to near room temperature in the first cool chamber 131 or the second cool chamber 141. be.

After a predetermined cooling processing time has passed, the transfer robot 120 unloads the cooled semiconductor wafer W from the first cool chamber 131 or the second cool chamber 141 and returns it to the carrier C. FIG. After a predetermined number of processed semiconductor wafers W are accommodated in the carrier C, the carrier C is unloaded from the load port 110 of the indexer section 101 .

The description of the heat treatment in the heat treatment unit 160 will be continued. Prior to carrying the semiconductor wafer W into the processing chamber 6, the valve 84 for supplying air is opened, and the valves 89 and 192 for exhausting are opened to start supplying and exhausting the inside of the processing chamber 6. FIG. When the valve 84 is opened, nitrogen gas is supplied from the gas supply hole 81 to the heat treatment space 65 . Further, when the valve 89 is opened, the gas inside the processing chamber 6 is exhausted from the gas exhaust hole 86 . As a result, the nitrogen gas supplied from the upper portion of the heat treatment space 65 in the processing chamber 6 flows downward and is exhausted from the lower portion of the heat treatment space 65 .

Further, by opening the valve 192 , the gas inside the processing chamber 6 is also exhausted from the transfer opening 66 . Furthermore, the atmosphere around the drive section of the transfer mechanism 10 is also exhausted by an exhaust mechanism (not shown). Nitrogen gas is continuously supplied to the heat treatment space 65 during the heat treatment of the semiconductor wafer W in the heat treatment section 160, and the supply amount is appropriately changed according to the treatment process.

Subsequently, the gate valve 185 is opened to open the transfer opening 66 , and the semiconductor wafer W to be processed is carried into the heat treatment space 65 in the processing chamber 6 through the transfer opening 66 by the transfer robot 150 . The transport robot 150 advances the transport hand 151a (or the transport hand 151b) holding the unprocessed semiconductor wafer W to a position directly above the holding part 7 and stops it. When the pair of transfer arms 11 of the transfer mechanism 10 moves horizontally from the retracted position to the transfer operation position and rises, the lift pins 12 protrude from the upper surface of the holding plate 75 of the susceptor 74 through the through holes 79 . receives the semiconductor wafer W. At this time, the lift pins 12 rise above the upper ends of the substrate support pins 77 .

After the unprocessed semiconductor wafer W is placed on the lift pins 12 , the transport robot 150 moves the transport hand 151 a out of the heat treatment space 65 and the transport opening 66 is closed by the gate valve 185 . As the pair of transfer arms 11 descends, the semiconductor wafer W is transferred from the transfer mechanism 10 to the susceptor 74 of the holding section 7 and held from below in a horizontal posture. The semiconductor wafer W is held by the susceptor 74 while being supported by a plurality of substrate support pins 77 erected on a holding plate 75 . Further, the semiconductor wafer W is held by the holding portion 7 with the surface having the pattern formed and the impurity implanted as the upper surface. A predetermined gap is formed between the back surface (main surface opposite to the front surface) of the semiconductor wafer W supported by the plurality of substrate support pins 77 and the holding surface 75 a of the holding plate 75 . The pair of transfer arms 11 that have descended below the susceptor 74 are retracted by the horizontal movement mechanism 13 to the retracted position, that is, to the inside of the recess 62 .

After the semiconductor wafer W is held from below in a horizontal posture by the susceptor 74 of the holding part 7, the 40 halogen lamps HL are turned on at once to start preheating (assist heating). Halogen light emitted from the halogen lamp HL passes through the lower chamber window 64 and the susceptor 74 made of quartz and is irradiated from the lower surface of the semiconductor wafer W. As shown in FIG. The semiconductor wafer W is preheated by being irradiated with light from the halogen lamp HL, and the temperature rises. Since the transfer arm 11 of the transfer mechanism 10 is retracted inside the recess 62, it does not interfere with the heating by the halogen lamp HL.

The temperature of the semiconductor wafer W is measured by the lower radiation thermometer 20 when preheating is performed by the halogen lamp HL. That is, the lower radiation thermometer 20 receives infrared light emitted from the lower surface of the semiconductor wafer W held by the susceptor 74 through the opening 78 to measure the temperature of the wafer during heating. The measured temperature of the semiconductor wafer W is transmitted to the controller 3 . The control unit 3 controls the output of the halogen lamps HL while monitoring whether the temperature of the semiconductor wafer W, which is heated by light irradiation from the halogen lamps HL, has reached a predetermined preheating temperature T1. That is, the control unit 3 feedback-controls the output of the halogen lamp HL based on the measured value by the lower radiation thermometer 20 so that the temperature of the semiconductor wafer W reaches the preheating temperature T1. The preheating temperature T1 is set to about 600° C. to 800° C. (700° C. in this embodiment) at which there is no risk of diffusion of impurities added to the semiconductor wafer W due to heat.

After the temperature of the semiconductor wafer W reaches the preheating temperature T1, the controller 3 temporarily maintains the semiconductor wafer W at the preheating temperature T1. Specifically, when the temperature of the semiconductor wafer W measured by the lower radiation thermometer 20 reaches the preheating temperature T1, the control unit 3 adjusts the output of the halogen lamp HL to bring the temperature of the semiconductor wafer W to approximately It is maintained at the preheating temperature T1.

By performing such preheating using the halogen lamps HL, the temperature of the entire semiconductor wafer W is uniformly raised to the preheating temperature T1. In the stage of preheating by the halogen lamps HL, the temperature of the peripheral portion of the semiconductor wafer W, which is more susceptible to heat dissipation, tends to be lower than that of the central portion. The region facing the peripheral portion of the semiconductor wafer W is higher than the region facing the central portion. For this reason, the amount of light irradiated to the peripheral portion of the semiconductor wafer W, which tends to cause heat dissipation, is increased, and the in-plane temperature distribution of the semiconductor wafer W in the preheating stage can be made uniform.

When the temperature of the semiconductor wafer W reaches the preheating temperature T1 and a predetermined time has passed, the flash lamps FL irradiate the surface of the semiconductor wafer W with flash light. At this time, part of the flash light emitted from the flash lamp FL goes directly into the processing chamber 6, and the other part goes into the processing chamber 6 after once being reflected by the reflector 52. Flash heating of the semiconductor wafer W is performed by the irradiation of light.

Since the flash heating is performed by irradiating flash light (flash light) from the flash lamps FL, the surface temperature of the semiconductor wafer W can be raised in a short time. That is, the flash light emitted from the flash lamp FL has an extremely short irradiation time of about 0.1 millisecond or more and 100 millisecond or less, in which the electrostatic energy previously stored in the capacitor is converted into an extremely short light pulse. A strong flash. Then, the surface temperature of the semiconductor wafer W flash-heated by flash light irradiation from the flash lamps FL instantaneously rises to the processing temperature T2 of 1000° C. or higher, and the impurities implanted into the semiconductor wafer W are activated. After that, the surface temperature drops rapidly. In this way, flash heating can raise and lower the surface temperature of the semiconductor wafer W in an extremely short time, so that the impurities implanted into the semiconductor wafer W can be activated while suppressing thermal diffusion of the impurities. . Since the time required for the activation of the impurity is extremely short compared to the time required for the thermal diffusion of the impurity, even in a short time of 0.1 milliseconds to 100 milliseconds in which diffusion does not occur, the activation will not occur. complete.

The halogen lamp HL is extinguished after a predetermined time has elapsed after the flash heating process is completed. As a result, the temperature of the semiconductor wafer W is rapidly lowered from the preheating temperature T1. The temperature of the semiconductor wafer W during cooling is measured by the lower radiation thermometer 20 , and the measurement result is transmitted to the controller 3 . The control unit 3 monitors whether or not the temperature of the semiconductor wafer W has decreased to a predetermined temperature based on the measurement result of the lower radiation thermometer 20 . After the temperature of the semiconductor wafer W is lowered to a predetermined level or less, the pair of transfer arms 11 of the transfer mechanism 10 moves horizontally again from the retracted position to the transfer operation position, thereby moving the lift pins 12 to the susceptor. It protrudes from the upper surface of 74 and receives the semiconductor wafer W after heat treatment from the susceptor 74 . Subsequently, the transfer opening 66 closed by the gate valve 185 is opened, and the processed semiconductor wafer W placed on the lift pins 12 is carried out by the transfer hand 151b (or the transfer hand 151a) of the transfer robot 150. be. The transport robot 150 advances the transport hand 151b to a position directly below the semiconductor wafer W pushed up by the lift pins 12 and stops it. By lowering the pair of transfer arms 11, the flash-heated semiconductor wafer W is transferred to and placed on the transfer hand 151b. After that, the transport robot 150 moves the transport hand 151b out of the processing chamber 6 and unloads the semiconductor wafer W after processing.

Next, a technique for predicting in advance the processing temperature T2 reached by the surface of the semiconductor wafer W during flash heating will be described. FIG. 11 is a flow chart showing a procedure for calculating the predicted reaching temperature of the semiconductor wafer W in the first embodiment. First, a lot is carried into the heat treatment apparatus 100 (step S11). A lot is a set of semiconductor wafers W to be subjected to the same processing under the same conditions. Specifically, a plurality of (25 in this embodiment) semiconductor wafers W constituting a lot are placed on the load port 110 of the indexer section 101 while being housed in the carrier C. As shown in FIG.

Next, a recipe is set for each of the plurality of semiconductor wafers W housed in the carrier C (step S12). A recipe defines a processing procedure and processing conditions for the heat treatment of the semiconductor wafer W. As shown in FIG. The control unit 3 controls each mechanism of the heat treatment apparatus 100 according to the recipe, so that the semiconductor wafer W is subjected to the above-described preheating treatment and flash heating treatment. A plurality of types of recipes are prepared in advance and stored in the storage section of the control section 3 or the like. An operator of the heat treatment apparatus 100 selects an appropriate recipe from the touch panel functioning as the input unit 33 and the display unit 34 and sets it individually for each of the plurality of semiconductor wafers W contained in the carrier C. FIG. Typically, one carrier C accommodates a plurality of semiconductor wafers W to be subjected to the same processing under the same conditions. One common recipe may be set for each of the semiconductor wafers W. A plurality of types of processing procedure recipes defining only processing procedures and processing condition recipes defining only processing conditions are separately prepared in advance and stored in the storage unit or the like of the control unit 3, and these recipes are stored when setting the recipes. They may be used in combination.

After the recipe is set for a plurality of semiconductor wafers W, the transfer robot 120 takes out the semiconductor wafers W one by one from the carrier C and carries them into the alignment chamber 231 of the alignment section 230 . In the alignment chamber 231 , the semiconductor wafer W is supported by a rotation supporter 237 . Then, the reflectance measurement unit 232 measures the reflectance of the surface of the semiconductor wafer W supported by the rotation support unit 237 (step S13). Specifically, the light emitted from the light projecting section 300 of the reflectance measuring section 232 is reflected by the half mirror 236, and the surface of the semiconductor wafer W is irradiated with the light at an incident angle of 0°. The light emitted from the light projecting section 300 is reflected by the surface of the semiconductor wafer W, and the reflected light passes through the half mirror 236 and is received by the light receiving section 235 . Thereby, the reflected light intensity of the semiconductor wafer W is obtained.

The storage unit of the control unit 3 stores the reflected light intensity previously measured by the reflectance measurement unit 232 by the same method as described above for a bare silicon wafer that has not been patterned or ion-implanted. The reflectance calculation unit 31 calculates the reflectance of the surface of the semiconductor wafer W by dividing the reflected light intensity of the semiconductor wafer W received by the light receiving unit 235 by the reflected light intensity of the bare wafer, using the reflected light intensity of the bare wafer as a reference. do. That is, in this embodiment, the relative reflectance of the semiconductor wafer W with respect to the bare wafer is calculated. The calculated reflectance of the semiconductor wafer W is stored in the storage section of the control section 3 .

After the reflectance measurement is completed, the transfer robot 120 takes out the semiconductor wafer W after measurement from the alignment chamber 231 and returns it to the carrier C of the load port 110 . That is, the heat treatment apparatus 100 is provided with a dedicated transport mode for measuring the reflectance of the semiconductor wafer W. In this transport mode, the semiconductor wafer W unloaded from the alignment chamber 231 is transported to the processing chamber 6. It is immediately returned to the original carrier C without being released.

The reflectance measurement in step S13 is sequentially performed on all of the plurality of semiconductor wafers W accommodated in the carrier C. As shown in FIG. That is, a plurality of semiconductor wafers W accommodated in the carrier C are sequentially transported to the alignment chamber 231 to have their reflectances measured, and then returned to the original carrier C in sequence after the measurement.

After the reflectance measurement of all the semiconductor wafers W accommodated in the carrier C is completed, the temperature calculation section 36 of the control section 3 calculates the expected arrival temperature of the semiconductor wafers W (step S14). A recipe defining processing conditions is set for all the semiconductor wafers W accommodated in the carrier C. As shown in FIG. The recipe defines processing conditions such as the discharge voltage of the flash lamp FL and the irradiation time (pulse width) during flash light irradiation. More specifically, the discharge voltage of the flash lamp FL is defined by the charging voltage to the capacitor that supplies charge to the flash lamp FL. Also, the irradiation time of the flash lamp FL is defined by, for example, a pulse waveform applied to the gate of an IGBT (Insulated Gate Bipolar Transistor) connected to the flash lamp FL.

Moreover, the reflectance (relative reflectance) of all the semiconductor wafers W housed in the carrier C is also measured. That is, for all the semiconductor wafers W accommodated in the carrier C, the reflectance as the optical characteristics of the wafer and the discharge voltage and irradiation time as the optical characteristics of the flash lamps FL are obtained as parameters. Based on these parameters, the temperature calculator 36 calculates the predicted surface temperatures of all of the plurality of semiconductor wafers W housed in the carrier C when they are irradiated with flash light. Specifically, the temperature reached to the surface when the bare wafer is processed under the processing conditions specified in the set recipe is actually measured and stored. The temperature calculation unit 36 calculates the expected arrival temperature of the surface of the semiconductor wafer W based on the relative reflectance of the semiconductor wafer W with respect to the bare wafer and the surface arrival temperature of the bare wafer. When the relative reflectance of the semiconductor wafer W is less than 1, the predicted surface temperature of the semiconductor wafer W is higher than the surface temperature of the bare wafer. The predicted temperature reached may be a temperature profile showing changes in the surface temperature of the semiconductor wafer W for a certain period of time, or may be the maximum reached temperature of the surface of the semiconductor wafer W. FIG.

Subsequently, the control unit 3 displays the predicted arrival temperature of the semiconductor wafer W calculated by the temperature calculation unit 36 on the display unit 34 (step S15). FIG. 12 is a diagram showing an example of a display screen displayed on the display unit 34. As shown in FIG. As shown in FIG. 12, along with the carrier ID of the carrier C, the display screen displays the actually measured reflectance, the set recipe, and the calculated The expected arrival temperature is displayed.

The operator of the heat treatment apparatus 100 can grasp the predicted temperature reached by the semiconductor wafer W from the display screen of the display unit 34 . The operator corrects the processing conditions of the recipe or resets the recipe based on the displayed predicted temperature reached. For example, when the predicted temperature reached is higher than the desired target temperature, the operator lowers the discharge voltage of the flash lamps FL or shortens the irradiation time of the flash light so that the temperature reached by the semiconductor wafer W becomes lower. or

In the first embodiment, based on the set recipe and the measured reflectance of the semiconductor wafer W, the predicted reaching temperature of the semiconductor wafer W during the flash heat treatment is calculated, and the calculated predicted reaching temperature is calculated. it's shown. The operator of the heat treatment apparatus 100 can set the treatment conditions using the displayed predicted temperature as a stepping stone, so that the heat treatment conditions can be easily set compared to the method of finding the optimum conditions by trial and error. can.

<Second embodiment>
Next, a second embodiment of the invention will be described. The configuration of the heat treatment apparatus 100 of the second embodiment and the processing procedure of the semiconductor wafer W are substantially the same as those of the first embodiment. The second embodiment differs from the first embodiment in the method of obtaining the predicted temperature reached.

FIG. 13 is a block diagram showing the configuration of the control section 3 of the second embodiment. In FIG. 13, the same symbols are attached to the same elements as in the first embodiment (FIG. 10). The controller 3 of the second embodiment includes an extractor 37 and a setter 38 in addition to the reflectance calculator 31 . The extraction unit 37 and the setting unit 38 are also functional processing units realized by the CPU of the control unit 3 executing a predetermined processing program, and the details of the processing will be described later.

In the second embodiment, the database DB is stored in the magnetic disk 35, which is the storage unit of the control unit 3. FIG. In this database DB, the reflectance of the semiconductor wafer W, the recipe, and the temperature in the past flash heat treatment are registered in association with each other. The reflectance of the semiconductor wafer W registered in the database DB is actually measured reflectance measured by the reflectance measurement unit 232 in the alignment chamber 231 . The recipe registered in the database DB is the recipe set for the semiconductor wafer W concerned. The temperature registered in the database DB is the surface temperature of the semiconductor wafer W actually measured by the upper radiation thermometer 25 during the flash heat treatment. The temperature registered in the database DB may be a temperature profile showing changes in the surface temperature of the semiconductor wafer W for a certain period of time, or may be the highest temperature reached on the surface of the semiconductor wafer W. FIG.

FIG. 14 is a flow chart showing the procedure for obtaining the predicted temperature reached of the semiconductor wafer W in the second embodiment. First, as in the first embodiment, a lot is loaded into the heat treatment apparatus 100 (step S21). That is, a plurality of (25 in this embodiment) semiconductor wafers W constituting a lot are placed on the load port 110 of the indexer section 101 in a state accommodated in the carrier C. FIG.

After the carrier C is placed on the load port 110, the reflectance of the surface of the semiconductor wafer W is measured in the second embodiment (step S22). Specifically, the delivery robot 120 takes out the semiconductor wafers W one by one from the carrier C and carries them into the alignment chamber 231 of the alignment section 230 . In the alignment chamber 231 , the semiconductor wafer W is supported by a rotation supporter 237 . Then, the reflectance measurement unit 232 measures the reflectance of the surface of the semiconductor wafer W supported by the rotation support unit 237 in the same manner as in the first embodiment.

After the reflectance measurement is completed, the transfer robot 120 takes out the semiconductor wafer W after measurement from the alignment chamber 231 and returns it to the carrier C of the load port 110 . The reflectance measurement in step S22 is sequentially performed on all of the plurality of semiconductor wafers W housed in the carrier C. As shown in FIG. That is, a plurality of semiconductor wafers W accommodated in the carrier C are sequentially transported to the alignment chamber 231 to have their reflectances measured, and then returned to the original carrier C in sequence after the measurement.

Next, the extraction unit 37 of the control unit 3 searches the database DB and extracts the recipe associated with the reflectance that is the same as or similar to the reflectance of the semiconductor wafer W actually measured in step S22 and the temperature of the semiconductor wafer W. (Step S23). Subsequently, the control unit 3 displays the recipe extracted by the extraction unit 37 and the temperature of the semiconductor wafer W on the display unit 34 (step S24).

In the database DB, past results of flash heat treatment are registered. The recipe and temperature extracted by the extracting unit 37 are based on the results of flash heat treatment performed in the past on wafers having a reflectance similar to that of the semiconductor wafer W to be processed. Therefore, the operator of the heat treatment apparatus 100 can grasp what temperature the semiconductor wafer W to be processed reaches to what temperature during the heat treatment by checking the contents displayed on the display unit 34. can do. Based on the displayed recipe and temperature, the operator sets an appropriate recipe for the semiconductor wafer W to be processed accommodated in the carrier C and, if necessary, corrects the processing conditions specified in the recipe. (step S25). That is, the operator selects a recipe that allows the semiconductor wafer W to be processed to reach a desired target temperature, and sets the discharge voltage of the flash lamp FL and the irradiation time of the flash light.

The recipe setting in step S25 may be automatically performed by the setting section 38 of the control section 3 . For example, when the operator inputs a desired target temperature from the input unit 33, the setting unit 38 selects a recipe that provides a temperature close to the target temperature based on the search result, and sets it for the semiconductor wafer W to be processed. You can make it work. Furthermore, the setting unit 38 finely corrects the processing conditions of the recipe so that a temperature closer to the target temperature can be obtained, that is, finely corrects the discharge voltage of the flash lamp FL and the irradiation time of the flash light specified in the recipe. You can do it.

By heat-treating the semiconductor wafer W in the heat-treating apparatus 100 according to the recipe thus set, the semiconductor wafer W can be heated to the above target temperature.

In the second embodiment, based on the database DB in which the results of the flash heat treatment are registered, the past results of the wafer having the same degree of reflectance as the semiconductor wafer W to be processed are extracted and displayed. . Since the processing conditions for the semiconductor wafer W to be processed can be set based on such past results, the heat treatment conditions can be easily set compared to the method of finding the optimum conditions by trial and error. can.

<Third Embodiment>
Next, a third embodiment of the invention will be described. The configuration of the heat treatment apparatus 100 and the processing procedure of the semiconductor wafer W of the third embodiment are substantially the same as those of the first embodiment. The third embodiment differs from the first and second embodiments in the method of setting processing conditions.

FIG. 15 is a block diagram showing the configuration of the control section 3 of the third embodiment. In FIG. 15, the same symbols are attached to the same elements as in the first embodiment (FIG. 10) and the second embodiment (FIG. 13). The control unit 3 of the third embodiment includes a condition calculation unit 39 and a setting unit 38 in addition to the reflectance calculation unit 31 . The condition calculation unit 39 and the setting unit 38 are also functional processing units realized by the CPU of the control unit 3 executing a predetermined processing program, and the details of the processing will be described later.

FIG. 16 is a flow chart showing a procedure for setting processing conditions for the semiconductor wafer W in the third embodiment. First, as in the first embodiment, a lot is carried into the heat treatment apparatus 100 (step S31). That is, a plurality of (25 in this embodiment) semiconductor wafers W constituting a lot are placed on the load port 110 of the indexer section 101 in a state accommodated in the carrier C. FIG.

After the carrier C is placed on the load port 110, the reflectance of the surface of the semiconductor wafer W is measured in the third embodiment (step S32). Specifically, the delivery robot 120 takes out the semiconductor wafers W one by one from the carrier C and carries them into the alignment chamber 231 of the alignment section 230 . In the alignment chamber 231 , the semiconductor wafer W is supported by a rotation supporter 237 . Then, the reflectance measurement unit 232 measures the reflectance of the surface of the semiconductor wafer W supported by the rotation support unit 237 in the same manner as in the first embodiment.

After the reflectance measurement is completed, the transfer robot 120 takes out the semiconductor wafer W after measurement from the alignment chamber 231 and returns it to the carrier C of the load port 110 . The reflectance measurement in step S32 is sequentially performed on all of the plurality of semiconductor wafers W housed in the carrier C. As shown in FIG. That is, a plurality of semiconductor wafers W accommodated in the carrier C are sequentially transported to the alignment chamber 231 to have their reflectances measured, and then returned to the original carrier C in sequence after the measurement.

Next, the condition calculation unit 39 of the control unit 3 determines a processing condition for heating the semiconductor wafer W to a desired target temperature based on the reflectance of the semiconductor wafer W to be processed actually measured in step S32. Calculate (step S33). The condition calculation unit 39 applies a known arithmetic model to the measured reflectance, which is the optical characteristic of the semiconductor wafer W, and calculates the discharge voltage of the flash lamp FL, the irradiation time of the flash light, etc. necessary to obtain the desired target temperature. is calculated as a processing condition. The calculated processing conditions are displayed on the display section 34 .

Next, the setting unit 38 of the control unit 3 creates a recipe defining the processing conditions calculated in step S33 and sets the recipe for the semiconductor wafer W to be processed (step S34). By heat-treating the semiconductor wafer W in the heat-treating apparatus 100 according to the recipe thus set, the semiconductor wafer W can be heated to the above target temperature. The operator of the heat treatment apparatus 100 may create a recipe according to the contents displayed on the display unit 34 and set the recipe for the semiconductor wafer W to be processed.

In the third embodiment, processing conditions for the semiconductor wafer W to reach a desired target temperature are calculated from the actually measured reflectance of the semiconductor wafer W to be processed, and a recipe defining the processing conditions is created. is set to the semiconductor wafer W in question. Since the processing conditions for the semiconductor wafer W obtained by arithmetic processing from the actually measured reflectance can be set, the heat treatment conditions can be easily set compared to the method of finding the optimum conditions by trial and error.

<Modification>
Although the embodiments of the present invention have been described above, the present invention can be modified in various ways other than those described above without departing from the scope of the invention. For example, in the third embodiment, the condition calculation unit 39 of the control unit 3 calculates the processing conditions. It is also possible to calculate the processing conditions from Since the control unit 3 is basically a control computer for controlling each part of the heat treatment apparatus 100, when performing complicated arithmetic processing using various parameters, the processing conditions are calculated by a dedicated computer. preferably.

Further, in the above embodiment, the reflectance measurement unit 232 is provided in the alignment chamber 231, but the present invention is not limited to this. For example, it may be provided in the first cool chamber 131 or the second cool chamber 141).

Further, in the above embodiment, the flash lamp house 5 is provided with 30 flash lamps FL, but the present invention is not limited to this, and the number of flash lamps FL can be any number. . Also, the flash lamp FL is not limited to a xenon flash lamp, and may be a krypton flash lamp. Further, the number of halogen lamps HL provided in the halogen lamp house 4 is not limited to 40, and may be any number.

In the above embodiment, the semiconductor wafer W is preheated by using the filament type halogen lamp HL as the continuous lighting lamp that continuously emits light for one second or longer. Preheating may be performed by using a discharge type arc lamp (for example, a xenon arc lamp) as a continuous lighting lamp instead of the halogen lamp HL.

Further, substrates to be processed by the heat treatment apparatus 100 are not limited to semiconductor wafers, and may be glass substrates used for flat panel displays such as liquid crystal display devices or substrates for solar cells.

3 Control Part 4 Halogen Lamp House 5 Flash Lamp House 6 Processing Chamber 7 Holding Part 10 Transfer Mechanism 31 Reflectance Calculation Part 33 Input Part 34 Display Part 35 Magnetic Disk 36 Temperature Calculation Part 37 Extraction Part 38 Setting Part 39 Condition Calculation Part 65 Heat Treatment Space 74 Susceptor 100 Heat Treatment Apparatus 101 Indexer Section 120 Transfer Robot 130, 140 Cooling Section 150 Transfer Robot 151a, 151b Transfer Hand 160 Heat Treatment Section 231 Alignment Chamber 232 Reflectance Measurement Section DB Database FL Flash Lamp HL Halogen Lamp W Semiconductor Wafer

Claims (6)

A heat treatment method for heating a substrate by irradiating the substrate with flash light,
a recipe setting step of setting a recipe defining a processing procedure and processing conditions for a substrate to be processed;
a reflectance measuring step of measuring the reflectance of the substrate;
Based on the discharge voltage and flash light irradiation time of the flash lamp specified in the recipe set in the recipe setting step and the reflectance measured in the reflectance measurement step, the substrate during heat treatment. a temperature calculation step of calculating the temperature;
a display step of displaying side by side the reflectance measured in the reflectance measurement step, the recipe set in the recipe setting step, and the temperature of the substrate calculated in the temperature calculation step;
A heat treatment method, comprising: A heat treatment method for heating a substrate by irradiating the substrate with flash light,
a reflectance measurement step of measuring the reflectance of the substrate to be processed;
A recipe and a substrate corresponding to the reflectance measured in the reflectance measurement step from a database in which recipes defining the reflectance, treatment procedure and treatment conditions, and a temperature profile indicating the temperature change of the substrate during heat treatment are associated with each other. an extraction step of extracting the temperature profile of
a display step of displaying the recipe extracted in the extraction step and the temperature profile of the substrate;
A heat treatment method, comprising: In the heat treatment method according to claim 2,
A heat treatment method, further comprising a setting step of setting processing conditions for the substrate to be processed based on the recipe extracted in the extraction step and the temperature profile of the substrate. A heat treatment apparatus for heating a substrate by irradiating the substrate with flash light,
a chamber containing a substrate to be processed;
a flash lamp that irradiates the substrate housed in the chamber with flash light;
an input unit that accepts setting of a recipe that defines a processing procedure and processing conditions for the substrate;
a reflectance measuring unit that measures the reflectance of the substrate;
The temperature of the substrate during heat treatment is determined based on the discharge voltage and flash light irradiation time of the flash lamp specified in the recipe set by the input unit and the reflectance measured by the reflectance measurement unit. a temperature calculating unit for calculating;
a display unit that displays side by side the reflectance measured by the reflectance measurement unit, the recipe set by the input unit, and the temperature of the substrate calculated by the temperature calculation unit;
A heat treatment apparatus comprising: A heat treatment apparatus for heating a substrate by irradiating the substrate with flash light,
a chamber containing a substrate to be processed;
a flash lamp that irradiates the substrate housed in the chamber with flash light;
a reflectance measuring unit that measures the reflectance of the substrate;
a storage unit that stores a database that associates recipes defining reflectance, processing procedures and processing conditions, and temperature profiles that indicate temperature changes of substrates during heat processing;
an extraction unit that extracts recipes and substrate temperature profiles corresponding to the reflectance measured by the reflectance measurement unit from the database;
a display unit that displays the recipe extracted by the extraction unit and the temperature profile of the substrate;
A heat treatment apparatus comprising: In the heat treatment apparatus according to claim 5 ,
A heat treatment apparatus, further comprising a setting unit that sets processing conditions for the substrate to be processed based on the recipe extracted by the extraction unit and the temperature profile of the substrate.

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