TWI759938B - 高速且低功率傳輸及接收資料之記憶體裝置 - Google Patents

高速且低功率傳輸及接收資料之記憶體裝置 Download PDF

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Publication number
TWI759938B
TWI759938B TW109138212A TW109138212A TWI759938B TW I759938 B TWI759938 B TW I759938B TW 109138212 A TW109138212 A TW 109138212A TW 109138212 A TW109138212 A TW 109138212A TW I759938 B TWI759938 B TW I759938B
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TW
Taiwan
Prior art keywords
write data
data strobe
strobe signal
signal
memory device
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TW109138212A
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English (en)
Chinese (zh)
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TW202129509A (zh
Inventor
文炳模
金知慧
柳濟民
吉汎涌
安成悟
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南韓商三星電子股份有限公司
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Publication of TW202129509A publication Critical patent/TW202129509A/zh
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Publication of TWI759938B publication Critical patent/TWI759938B/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4093—Input/output [I/O] data interface arrangements, e.g. data buffers

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
TW109138212A 2020-01-21 2020-11-03 高速且低功率傳輸及接收資料之記憶體裝置 TWI759938B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20200008110 2020-01-21
KR10-2020-0008110 2020-01-21
KR1020200061441A KR20210095009A (ko) 2020-01-21 2020-05-22 고속 및 저전력으로 데이터를 송수신하는 메모리 장치
KR10-2020-0061441 2020-05-22

Publications (2)

Publication Number Publication Date
TW202129509A TW202129509A (zh) 2021-08-01
TWI759938B true TWI759938B (zh) 2022-04-01

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TW109138212A TWI759938B (zh) 2020-01-21 2020-11-03 高速且低功率傳輸及接收資料之記憶體裝置
TW110102104A TWI769671B (zh) 2020-01-21 2021-01-20 記憶體裝置及其操作方法

Family Applications After (1)

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TW110102104A TWI769671B (zh) 2020-01-21 2021-01-20 記憶體裝置及其操作方法

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KR (2) KR20210095009A (ko)
SG (1) SG10202100590QA (ko)
TW (2) TWI759938B (ko)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20230067190A1 (en) * 2021-08-27 2023-03-02 Macronix International Co., Ltd. Reconfigurable ai system
TWI789064B (zh) * 2021-10-20 2023-01-01 鯨鏈科技股份有限公司 基於晶圓堆疊架構的計算機系統
TWI779935B (zh) * 2021-11-24 2022-10-01 瑞昱半導體股份有限公司 資料處理系統、緩衝電路與緩衝電路的操作方法
US20240072772A1 (en) * 2022-08-31 2024-02-29 Global Unichip Corporation Interface device and signal transceiving method thereof

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110055671A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Advanced memory device having improved performance, reduced power and increased reliability
US20140233292A1 (en) * 2010-05-25 2014-08-21 Samsung Electronics Co., Ltd. 3d semiconductor device
US20170084320A1 (en) * 2015-06-16 2017-03-23 SK Hynix Inc. Semiconductor devices and semiconductor systems including the same
US20190163650A1 (en) * 2017-11-29 2019-05-30 Samsung Electronics Co., Ltd. Memory device communicating with system on chip through at least two channels, electronic device including the same, and operating method of electronic device
US20190206478A1 (en) * 2017-12-28 2019-07-04 Samsung Electronics Co., Ltd. Memory device for receiving operation codes through dq pins, a memory module including the same, and a setting method of the memory module

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5420433B2 (ja) * 2010-01-14 2014-02-19 ルネサスエレクトロニクス株式会社 半導体装置および電源装置
KR20130102816A (ko) * 2012-03-08 2013-09-23 삼성전자주식회사 데이터 액세스 메모리 및 그것의 데이터 손실 방지 방법
EP3743784B1 (en) * 2018-01-25 2022-01-12 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Electronic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110055671A1 (en) * 2009-09-03 2011-03-03 International Business Machines Corporation Advanced memory device having improved performance, reduced power and increased reliability
US20140233292A1 (en) * 2010-05-25 2014-08-21 Samsung Electronics Co., Ltd. 3d semiconductor device
US20170084320A1 (en) * 2015-06-16 2017-03-23 SK Hynix Inc. Semiconductor devices and semiconductor systems including the same
US20190163650A1 (en) * 2017-11-29 2019-05-30 Samsung Electronics Co., Ltd. Memory device communicating with system on chip through at least two channels, electronic device including the same, and operating method of electronic device
US20190206478A1 (en) * 2017-12-28 2019-07-04 Samsung Electronics Co., Ltd. Memory device for receiving operation codes through dq pins, a memory module including the same, and a setting method of the memory module

Also Published As

Publication number Publication date
KR20210094446A (ko) 2021-07-29
KR20210095009A (ko) 2021-07-30
TWI769671B (zh) 2022-07-01
TW202129509A (zh) 2021-08-01
TW202134895A (zh) 2021-09-16
SG10202100590QA (en) 2021-08-30

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