TWI759490B - Monitoring device, monitoring method and computer-readable recording medium - Google Patents

Monitoring device, monitoring method and computer-readable recording medium Download PDF

Info

Publication number
TWI759490B
TWI759490B TW107118171A TW107118171A TWI759490B TW I759490 B TWI759490 B TW I759490B TW 107118171 A TW107118171 A TW 107118171A TW 107118171 A TW107118171 A TW 107118171A TW I759490 B TWI759490 B TW I759490B
Authority
TW
Taiwan
Prior art keywords
image
vapor deposition
monitoring
images
reference image
Prior art date
Application number
TW107118171A
Other languages
Chinese (zh)
Other versions
TW201903182A (en
Inventor
山田実
Original Assignee
日商日立造船股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商日立造船股份有限公司 filed Critical 日商日立造船股份有限公司
Publication of TW201903182A publication Critical patent/TW201903182A/en
Application granted granted Critical
Publication of TWI759490B publication Critical patent/TWI759490B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/52Means for observation of the coating process
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/28Vacuum evaporation by wave energy or particle radiation
    • C23C14/30Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)

Abstract

本發明提供監視裝置、監視方法及電腦可讀取記錄媒體。所述監視裝置(1)包括:拍攝部(11),將爐膛內襯(24)作為拍攝對象,進行多次拍攝;圖像選擇部(16),從拍攝部拍攝的多個圖像之中,選擇與基準圖像最相關的圖像作為分析對象圖像;以及狀態判定部(17),通過分析圖像選擇部選擇的分析對象圖像,來判定蒸鍍裝置(2)的狀態。利用這種結構,可以高精度地判定蒸鍍裝置的狀態。The present invention provides a monitoring device, a monitoring method, and a computer-readable recording medium. The monitoring device (1) comprises: a photographing unit (11), which takes the furnace lining (24) as a photographing object and performs multiple photographs; and an image selecting unit (16), which selects images from among the multiple images photographed by the photographing unit , selects an image most relevant to the reference image as an analysis target image; and a state determination unit (17) determines the state of the vapor deposition device (2) by analyzing the analysis target image selected by the image selection unit. With this configuration, the state of the vapor deposition apparatus can be determined with high accuracy.

Description

監視裝置、監視方法及電腦可讀取記錄媒體Monitoring device, monitoring method, and computer-readable recording medium

本發明是有關於蒸鍍裝置的監視。The present invention relates to monitoring of vapor deposition apparatuses.

以往開發了監視蒸鍍裝置的技術,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜。專利文獻1公開了其中一例。Conventionally, a technique has been developed to monitor a vapor deposition apparatus that forms a film on a substrate by vapor deposition of a vapor deposition material on the substrate. Patent Document 1 discloses one example.

專利文獻1公開了如下的技術:由CCD(電荷耦合元件:Charge Coupled Device)相機識別電子束對蒸鍍材料的照射位置,並根據所述照射位置,進行電子束的位置的控制。 [現有技術文獻] [專利文獻]Patent Document 1 discloses a technique of recognizing the irradiation position of an electron beam on a vapor deposition material by a CCD (Charge Coupled Device) camera, and controlling the position of the electron beam based on the irradiation position. [Prior Art Document] [Patent Document]

[專利文獻1]日本專利公開公報特開2005-126759號(2005年5月19日公開)[Patent Document 1] Japanese Patent Laid-Open Publication No. 2005-126759 (published on May 19, 2005)

[發明所欲解決之課題] 可是,專利文獻1中沒有公開每當進行熔體表面狀況的監視或電子束位置的控制時取得多個圖像。因此,在專利文獻1的技術中,當進行所述監視或控制時,由於材料容器的周邊環境(例:材料容器自身或其周邊的亮度)的不同,存在取得不適當的圖像作為分析對象的可能性。此時,存在不能高精度進行所述監視或控制的可能性。THE PROBLEM TO BE SOLVED BY THE INVENTION However, Patent Document 1 does not disclose that a plurality of images are acquired every time the monitoring of the melt surface condition or the control of the electron beam position is performed. Therefore, in the technique of Patent Document 1, when the monitoring or control is performed, an inappropriate image may be acquired as an analysis target due to differences in the surrounding environment of the material container (for example, the brightness of the material container itself or its surroundings). possibility. In this case, there is a possibility that the monitoring or control cannot be performed with high accuracy.

本發明一個方式的目的是實現能高精度地判定蒸鍍裝置的狀態的監視裝置等。 [解決課題之手段]An object of one embodiment of the present invention is to realize a monitoring device or the like capable of accurately determining the state of a vapor deposition device. [Means of Solving Problems]

為了解決上述課題,本發明一個方式的監視裝置進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視裝置包括:拍攝部,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇部,從所述拍攝部拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定部,通過分析所述圖像選擇部選擇的分析對象圖像,來判定所述蒸鍍裝置的狀態。In order to solve the above-mentioned problems, a monitoring device according to one aspect of the present invention monitors a vapor deposition device that forms a film on a substrate by vapor-depositing a vapor deposition material on the substrate, and the monitoring device includes an imaging unit. , taking the container for holding the vapor deposition material provided in the vapor deposition device as a photographing object, and photographing a plurality of times; the image selection unit selects a plurality of images from the plurality of images photographed by the photographing unit an image most related to a reference image as an analysis target image, the reference image being an image showing the container; and a state determination unit that analyzes the analysis target image selected by the image selection unit, to determine the state of the vapor deposition apparatus.

而且,為了解決上述課題,本發明一個方式的監視方法進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視方法包括:拍攝步驟,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇步驟,從所述拍攝步驟拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定步驟,通過分析所述圖像選擇步驟選擇的分析對象圖像,來判定所述蒸鍍裝置的狀態。 而且,為了解決上述課題,本發明一個方式的電腦可讀取記錄媒體記錄有電腦程式,所述電腦程式被處理器執行時實現上述的監視方法的各步驟。 [發明的效果]Furthermore, in order to solve the above-mentioned problems, a monitoring method according to one aspect of the present invention monitors a vapor deposition apparatus that forms a film on a substrate by vapor deposition of a vapor deposition material on the substrate, and the monitoring method includes: In the photographing step, the container for holding the vapor deposition material provided by the vapor deposition device is used as the photographing object, and multiple times of photographing are performed; selecting an image most relevant to a reference image as an analysis target image, the reference image being an image showing the container; and a state determination step of analyzing the analysis target image selected by the image selection step image to determine the state of the vapor deposition device. Furthermore, in order to solve the above-mentioned problems, a computer-readable recording medium according to one embodiment of the present invention records a computer program that realizes each step of the above-mentioned monitoring method when the computer program is executed by a processor. [Effect of invention]

按照本發明一個方式的監視裝置、監視方法及電腦可讀取記錄媒體,可以獲得能高精度地判定蒸鍍裝置的狀態是否為正常狀態的效果。According to the monitoring device, the monitoring method, and the computer-readable recording medium of one aspect of the present invention, it is possible to obtain the effect of being able to accurately determine whether or not the state of the vapor deposition device is a normal state.

(實施方式1) 以下利用圖1~圖13具體說明本發明的一個實施方式。(Embodiment 1) Hereinafter, an embodiment of the present invention will be specifically described with reference to FIGS. 1 to 13 .

(監視系統的結構) 首先利用圖2~圖4,對本實施方式的監視系統的一例進行說明。圖2是表示本實施方式的監視系統的一例的圖。圖3是表示蒸鍍裝置2所具備的轉塔25的結構的一例的圖。圖4是爐膛內襯(hearth liner)24及其周邊的斷面示意圖。另外,圖4是爐膛內襯24處於正常位置時的斷面圖。(Configuration of Monitoring System) First, an example of the monitoring system according to the present embodiment will be described with reference to FIGS. 2 to 4 . FIG. 2 is a diagram showing an example of the monitoring system according to the present embodiment. FIG. 3 is a diagram showing an example of the configuration of the turret 25 included in the vapor deposition apparatus 2 . FIG. 4 is a schematic cross-sectional view of a hearth liner 24 and its surroundings. In addition, FIG. 4 is a sectional view when the furnace lining 24 is in a normal position.

另外,蒸鍍裝置所具備的用於保持蒸鍍材料的容器例如可以列舉坩堝。此外,在坩堝的內壁設置有爐膛內襯時,例如可以列舉爐膛內襯作為所述容器。本實施方式中,舉例說明所述容器為爐膛內襯的情況。Moreover, the container for holding a vapor deposition material with which the vapor deposition apparatus is equipped is mentioned, for example, a crucible. In addition, when the inner wall of the crucible is provided with a furnace lining, for example, a furnace lining can be cited as the container. In this embodiment, the case where the container is a furnace lining is exemplified.

如圖2所示,本實施方式的監視系統具備監視裝置1、蒸鍍裝置2和材料供給裝置3。蒸鍍裝置2是通過將蒸鍍材料MA蒸鍍於基板100而對基板100進行成膜的裝置。監視裝置1是監視所述蒸鍍裝置2的裝置。此外,材料供給裝置3是向蒸鍍裝置2所具備的爐膛內襯24供給蒸鍍材料MA的裝置。蒸鍍材料MA例如可以列舉鋁線材等,但是不限於此,可以是蒸鍍裝置2對基板100進行成膜的各種材料(例如金屬材料)。以下進一步具體說明監視裝置1和蒸鍍裝置2的結構。首先,說明蒸鍍裝置2。As shown in FIG. 2 , the monitoring system of the present embodiment includes a monitoring device 1 , a vapor deposition device 2 , and a material supply device 3 . The vapor deposition apparatus 2 is an apparatus for forming a film on the substrate 100 by vapor deposition of the vapor deposition material MA on the substrate 100 . The monitoring device 1 is a device for monitoring the vapor deposition device 2 . Moreover, the material supply apparatus 3 is an apparatus which supplies the vapor deposition material MA to the furnace lining 24 with which the vapor deposition apparatus 2 is equipped. The vapor deposition material MA includes, for example, an aluminum wire, but is not limited thereto, and may be various materials (eg, metal materials) that the vapor deposition apparatus 2 forms a film on the substrate 100 . The structures of the monitoring device 1 and the vapor deposition device 2 will be described in more detail below. First, the vapor deposition apparatus 2 will be described.

(蒸鍍裝置2) 蒸鍍裝置2具備電子束源(EB(Electron Beam)源)21、束偏轉用磁鐵22、極片23、爐膛內襯24、轉塔25、轉塔旋轉部26和基板旋轉部27。(Vapor deposition apparatus 2 ) The vapor deposition apparatus 2 includes an electron beam source (EB (Electron Beam) source) 21 , a beam deflection magnet 22 , a pole piece 23 , a furnace lining 24 , a turret 25 , a turret rotating portion 26 , and a substrate Rotary part 27 .

電子束源21是束射出源,接受蒸鍍裝置2所具備的控制部(未圖示)的控制,向供給到(保持於)爐膛內襯24的蒸鍍材料MA射出電子束EB。此外,電子束源21包含能釋放出光子和構成電子束EB的熱電子的燈絲。通過將加速電壓與電流一起施加於燈絲,從而電子束源21釋放出的熱電子作為電子束EB,向電子束源21的前方射出。The electron beam source 21 is a beam emission source, and is controlled by a control unit (not shown) included in the vapor deposition apparatus 2 to emit electron beams EB to the vapor deposition material MA supplied (held) to the furnace lining 24 . In addition, the electron beam source 21 contains a filament capable of releasing photons and thermionic electrons constituting the electron beam EB. By applying an accelerating voltage and an electric current to the filament, thermionic electrons emitted from the electron beam source 21 are emitted forward of the electron beam source 21 as the electron beam EB.

此外,通過對燈絲施加電流而不施加加速電壓,從而燈絲僅釋放出光子。此時,電子束源21作為對其周圍進行照明的照明光源(白熾燈)發揮功能。通過在拍攝部11(後述)拍攝的時機使電子束源21作為照明光源發揮功能,從而不必另行設置用於拍攝的照明光源。此外,在另行設置照明光源時,大多設置在拍攝部11的附近。此時,會產生光暈,存在不能清晰地拍攝爐膛內襯24和轉塔25的可能性。如上所述,通過使用電子束源21作為照明光源,從而能防止光暈的發生,能清晰地拍攝爐膛內襯24和轉塔25。另外,也可以在不產生所述光暈的位置,設置與電子束源21獨立的照明光源。Furthermore, by applying a current to the filament without applying an accelerating voltage, the filament emits only photons. At this time, the electron beam source 21 functions as an illumination light source (an incandescent lamp) that illuminates its surroundings. By making the electron beam source 21 function as an illumination light source at the timing of imaging by the imaging unit 11 (described later), it is not necessary to separately provide an illumination light source for imaging. In addition, when the illumination light source is provided separately, it is often provided in the vicinity of the imaging unit 11 . At this time, a halo is generated, and there is a possibility that the furnace lining 24 and the turret 25 cannot be clearly photographed. As described above, by using the electron beam source 21 as the illumination light source, the occurrence of halos can be prevented, and the furnace lining 24 and the turret 25 can be clearly photographed. In addition, an illumination light source independent of the electron beam source 21 may be provided at a position where the halo is not generated.

束偏轉用磁鐵22和極片23是去路變更部,用於變更從電子束源21射出的電子束EB的去路。具體而言,束偏轉用磁鐵22和極片23通過接受所述控制部的控制而變更產生的磁力,從而變更電子束EB的去路。由此,電子束EB從電子束源21描繪著大致圓弧軌跡,向爐膛內襯24內的蒸鍍材料MA照射。此外,電子束EB的照射位置被控制為成膜速度最快的位置,即電子束EB照射到爐膛內襯24內的蒸鍍材料MA的熔體表面(bath surface、表面)的中心。The beam deflecting magnet 22 and the pole piece 23 are an outward path changing portion for changing the outward path of the electron beam EB emitted from the electron beam source 21 . Specifically, the beam deflection magnet 22 and the pole piece 23 are controlled by the control unit to change the generated magnetic force, thereby changing the path of the electron beam EB. Thereby, the electron beam EB draws a substantially circular arc trajectory from the electron beam source 21 and is irradiated to the vapor deposition material MA in the furnace lining 24 . In addition, the irradiation position of the electron beam EB is controlled to the position where the film formation speed is the fastest, that is, the electron beam EB is irradiated to the center of the melt surface (bath surface) of the vapor deposition material MA in the furnace lining 24 .

爐膛內襯24是用於保持由材料供給裝置3供給的蒸鍍材料MA的坩堝。利用轉塔旋轉部26的驅動來變更爐膛內襯24的位置。在材料供給裝置3的附近(材料供給位置),向爐膛內襯24供給蒸鍍材料MA。此外,在與基板100相對的位置(蒸鍍位置),爐膛內襯24內的蒸鍍材料MA接受從電子束源21射出的電子束EB而熔化且蒸發。並且,通過使蒸發的蒸鍍材料MA蒸鍍(附著)於基板100,對基板100進行蒸鍍材料MA的成膜。The furnace lining 24 is a crucible for holding the vapor deposition material MA supplied from the material supply device 3 . The position of the furnace lining 24 is changed by the driving of the turret rotating part 26 . In the vicinity of the material supply device 3 (material supply position), the vapor deposition material MA is supplied to the furnace lining 24 . Further, at a position (vapor deposition position) facing the substrate 100 , the vapor deposition material MA in the furnace lining 24 is melted and evaporated by receiving the electron beam EB emitted from the electron beam source 21 . Then, by evaporating (adhering) the evaporated vapor deposition material MA to the substrate 100 , film formation of the vapor deposition material MA is performed on the substrate 100 .

轉塔25是設置有多個爐膛內襯24的基座。本實施方式中,如圖3所示,在旋轉軸AX的周圍設有六個爐膛內襯24。利用轉塔旋轉部26的驅動,轉塔25圍繞旋轉軸AX旋轉,從而可以使爐膛內襯24在所述材料供給位置和所述蒸鍍位置之間移動。因此,可以使蒸鍍材料MA從處於蒸鍍位置且被供給了蒸鍍材料MA的爐膛內襯24A蒸發而對基板100進行成膜,並且可以向處於材料供給位置的其他爐膛內襯24B供給蒸鍍材料MA。即,朝向爐膛內襯24的蒸鍍材料MA的供給以及朝向基板100的蒸鍍材料MA的蒸鍍可以連續地進行。The turret 25 is a base on which a plurality of furnace liners 24 are provided. In this embodiment, as shown in FIG. 3 , six furnace liners 24 are provided around the rotation axis AX. The turret 25 is rotated around the rotation axis AX by the drive of the turret rotating part 26, so that the furnace lining 24 can be moved between the material supply position and the vapor deposition position. Therefore, the vapor deposition material MA can be evaporated from the furnace lining 24A at the vapor deposition position to which the vapor deposition material MA is supplied to form a film on the substrate 100, and the vapor deposition can be supplied to the other furnace linings 24B at the material supply position Plating material MA. That is, the supply of the vapor deposition material MA toward the furnace lining 24 and the vapor deposition of the vapor deposition material MA toward the substrate 100 can be performed continuously.

此外,如圖4所示,爐膛內襯24隔著隔熱件(反射器)30設置於轉塔25。隔熱件30用於提高對供給到爐膛內襯24的蒸鍍材料MA進行保溫的保溫性。利用隔熱件30,可以使所述蒸鍍材料MA高效地熔化。此外,利用隔熱件30,可以將爐膛內襯24相對於轉塔25定位。Furthermore, as shown in FIG. 4 , the furnace lining 24 is provided on the turret 25 via the heat insulating material (reflector) 30 . The heat insulating material 30 is used to improve the heat preservation property for heat preservation of the vapor deposition material MA supplied to the furnace lining 24 . With the heat insulating material 30, the vapor deposition material MA can be efficiently melted. In addition, the furnace lining 24 can be positioned relative to the turret 25 using the thermal insulation 30 .

轉塔旋轉部26與轉塔25的大致中心連接,使轉塔25圍繞旋轉軸AX旋轉。此外,通過將基板旋轉部27安裝在作為成膜對象的基板100的大致中心,從而基板旋轉部27使成膜中的基板100旋轉。由所述控制部控制轉塔旋轉部26和基板旋轉部27的驅動。The turret rotating part 26 is connected to the approximate center of the turret 25, and rotates the turret 25 around the rotation axis AX. Further, by attaching the substrate rotating unit 27 to the approximate center of the substrate 100 to be film-formed, the substrate rotating unit 27 rotates the substrate 100 under film formation. The driving of the turret rotating unit 26 and the substrate rotating unit 27 is controlled by the control unit.

(監視裝置1) 接下來,利用圖1、圖2、圖4~圖11,說明監視裝置1。圖1是表示本實施方式的監視裝置1的具體結構的一例的方塊圖。圖5是表示基準圖像資料庫141中登錄的基準圖像群的一例的圖,(a)表示包含爐膛內襯24的使用狀態不同的多個基準圖像的基準圖像群的一例,(b)表示包含熔體表面位置不同的多個基準圖像的基準圖像群的一例,(c)表示包含在預定範圍內爐膛內襯24的傾斜度不同的多個基準圖像的基準圖像群的一例,(d)表示包含電子束EB的照射位置不同的多個基準圖像的基準圖像群的一例。圖6是用於說明爐膛內襯24的位置的判定處理的圖。圖7是用於說明熔體表面位置的判定處理的圖。圖8是用於說明照射位置的判定處理的圖。圖9~圖11表示拍攝的多個圖像的一例。(Monitoring Device 1 ) Next, the monitoring device 1 will be described with reference to FIGS. 1 , 2 , and 4 to 11 . FIG. 1 is a block diagram showing an example of a specific configuration of a monitoring device 1 according to the present embodiment. FIG. 5 is a diagram showing an example of a reference image group registered in the reference image database 141, (a) shows an example of a reference image group including a plurality of reference images with different usage states of the furnace lining 24, ( b) shows an example of a reference image group including a plurality of reference images with different melt surface positions, (c) shows a reference image including a plurality of reference images with different inclinations of the furnace lining 24 within a predetermined range As an example of the group, (d) shows an example of a reference image group including a plurality of reference images having different irradiation positions of the electron beam EB. FIG. 6 is a diagram for explaining the determination process of the position of the furnace lining 24 . FIG. 7 is a diagram for explaining the determination process of the melt surface position. FIG. 8 is a diagram for explaining the determination processing of the irradiation position. 9 to 11 show an example of a plurality of images captured.

監視裝置1通過分析拍攝部11拍攝的爐膛內襯24的圖像,從而監視蒸鍍裝置2的狀態是否為正常狀態。如圖1所示,監視裝置1具備控制部10、拍攝部11(圖2也進行了圖示)、通知部13和記錄部14。此外,如圖2所示,監視裝置1具備相機快門12。The monitoring device 1 monitors whether the state of the vapor deposition device 2 is a normal state by analyzing the image of the furnace lining 24 captured by the imaging unit 11 . As shown in FIG. 1 , the monitoring device 1 includes a control unit 10 , an imaging unit 11 (also shown in FIG. 2 ), a notification unit 13 , and a recording unit 14 . Furthermore, as shown in FIG. 2 , the monitoring device 1 includes a camera shutter 12 .

(拍攝部) 拍攝部11利用拍攝控制部15(後述)的控制,將用於保持被照射了電子束EB的蒸鍍材料MA的爐膛內襯24(具體為爐膛內襯24及其周邊區域)作為拍攝對象,並且多次拍攝。(Image capture unit) The image capture unit 11 uses the control of the image capture control unit 15 (described later) to place the furnace lining 24 (specifically, the furnace lining 24 and its surrounding area) for holding the vapor deposition material MA irradiated with the electron beam EB. As the subject of photography, and shot many times.

與將一次拍攝取得的圖像(拍攝圖像)作為分析對象圖像的情況相比,通過多次拍攝,可以擴大其選擇範圍。因此,將爐膛內襯24(及其周邊)的清晰圖像作為分析對象圖像的可能性增大,所以能高精度地判定蒸鍍裝置2的狀態。Compared with the case where an image (captured image) obtained by one shot is used as the image to be analyzed, the selection range can be expanded by multiple shots. Therefore, the possibility of using a clear image of the furnace lining 24 (and its surroundings) as an analysis target image increases, so that the state of the vapor deposition apparatus 2 can be determined with high accuracy.

監視裝置1的監視對象為:(A)爐膛內襯24的位置;(B)供給到爐膛內襯24的蒸鍍材料MA的熔體表面位置;以及(C)從電子束源21射出的電子束EB在爐膛內襯24中的照射位置。換句話說,在監視裝置1中,後述狀態判定部17通過將分析對象圖像中顯現的所述(A)、(B)和(C)作為分析對象進行分析,從而判定蒸鍍裝置2的狀態是否為正常狀態。具體而言,狀態判定部17通過對分析對象圖像中顯現的各位置進行分析,來判定各位置是否處於正常位置(基準位置)。The monitoring objects of the monitoring device 1 are: (A) the position of the furnace lining 24 ; (B) the melt surface position of the vapor deposition material MA supplied to the furnace lining 24 ; and (C) the electrons emitted from the electron beam source 21 . The irradiation position of the beam EB in the furnace lining 24 . In other words, in the monitoring device 1 , the state determination unit 17 described later determines the state of the vapor deposition device 2 by analyzing (A), (B), and (C) appearing in the analysis target image as the analysis target. Whether the status is normal. Specifically, the state determination unit 17 determines whether or not each position is a normal position (reference position) by analyzing each position appearing in the analysis target image.

在此,所述分析對象圖像是拍攝部11拍攝的圖像,並且是用於在所述(A)~(C)的各監視中判定所述各位置是否處於正常位置所分析的圖像。此外,所述正常位置(基準位置)是指:在所述(A)中,包含爐膛內襯24的開口部的虛擬表面相對於轉塔25的表面基本不傾斜的狀態(具有預定範圍內的傾斜度的狀態);在所述(B)中,以不妨礙蒸鍍裝置2對基板100進行蒸鍍處理的程度向爐膛內襯24供給蒸鍍材料MA時,蒸鍍材料MA的熔體表面位置;在所述(C)中,為爐膛內襯24內的蒸鍍材料MA的熔體表面的重心(中心)。Here, the image to be analyzed is an image captured by the imaging unit 11 and is an image analyzed for determining whether or not the respective positions are in normal positions in each of the monitoring of (A) to (C). . In addition, the normal position (reference position) refers to a state in which the virtual surface including the opening of the furnace lining 24 is not substantially inclined with respect to the surface of the turret 25 in the above (A) (with a predetermined range of state of the inclination); in the above (B), when the vapor deposition material MA is supplied to the furnace lining 24 to such an extent that the vapor deposition process of the substrate 100 by the vapor deposition apparatus 2 is not hindered, the melt surface of the vapor deposition material MA is The position; in the above (C), it is the center of gravity (center) of the melt surface of the vapor deposition material MA in the furnace lining 24 .

本實施方式中,拍攝部11在所述(A)~(C)的各監視中,連續多次拍攝。換句話說,在所述(A)~(C)的三次監視中分別進行多次拍攝。由此,在所述(A)~(C)的各監視中,可以取得顯現出亮度不同的爐膛內襯24的多個圖像。但是,如果不考慮在各監視中取得多個圖像,也可以在一次蒸鍍處理中將連續的多次拍攝僅進行一次。In the present embodiment, the imaging unit 11 continuously captures a plurality of images in each of the above-mentioned monitoring (A) to (C). In other words, in each of the three monitoring of (A) to (C), a plurality of shots are performed. Thereby, in each monitoring of the above-mentioned (A) to (C), a plurality of images showing the furnace lining 24 with different brightness can be acquired. However, if it is not considered to acquire a plurality of images in each monitoring, the continuous multiple imaging may be performed only once in one vapor deposition process.

另外,本實施方式中,監視裝置1以所述(A)~(C)為監視對象(分析對象),但是也可以將所述(A)~(C)中的至少任意一個作為監視對象。In the present embodiment, the monitoring device 1 uses (A) to (C) as monitoring objects (analysis objects), but at least any one of (A) to (C) may be monitored.

此外,拍攝部11每當拍攝爐膛內襯24時,都改變拍攝靈敏度和快門速度中的至少任意一方。拍攝靈敏度用於規定拍攝時的每預定時間的光取入量(能力)。快門速度用於規定拍攝時的聚光時間。通過變更拍攝靈敏度和快門速度中的任意一方,可以取得亮度不同的圖像。通常,拍攝靈敏度越低,快門速度越快,則圖像越暗。In addition, the imaging unit 11 changes at least one of the imaging sensitivity and the shutter speed every time the furnace lining 24 is captured. The photographing sensitivity is used to define the light intake amount (capacity) per predetermined time during photographing. Shutter speed is used to specify the focusing time when shooting. By changing either the shooting sensitivity or the shutter speed, images with different brightness can be obtained. Generally, the lower the shooting sensitivity and the faster the shutter speed, the darker the image.

例如只拍攝了一枚圖像時,在所述圖像過亮(或過暗)的情況下,在所述圖像中可能難以確定爐膛內襯24或蒸鍍材料MA。通過取得亮度不同的多個圖像,可以取得亮度降低的圖像(或亮度增強的圖像)。此時,通過分析所述圖像,能確定爐膛內襯24或蒸鍍材料MA的可能性增大。For example, when only one image is captured, it may be difficult to determine the furnace lining 24 or the vapor deposition material MA in the image if the image is too bright (or too dark). By acquiring a plurality of images with different brightness, an image with reduced brightness (or an image with enhanced brightness) can be acquired. At this time, by analyzing the image, it can be determined that the furnace lining 24 or the vapor deposition material MA has an increased possibility.

拍攝靈敏度和快門速度分別設有多級。拍攝靈敏度和快門速度利用實驗等,設定在推定能取得如下的爐膛內襯24的圖像的可能性較高的範圍內,所述爐膛內襯24的圖像具有用於較容易地與基準圖像進行對比的對比度。此外,拍攝靈敏度和快門速度在考慮彼此的相關性的基礎上進行設定。另外,基準圖像由拍攝部11預先拍攝,是表示記錄部14的基準圖像資料庫(Database)141(後述)中登錄的爐膛內襯24的拍攝結果的圖像。Shooting sensitivity and shutter speed are each set in multiple levels. The photographing sensitivity and shutter speed are set within a range where it is estimated that the image of the furnace lining 24 can be obtained in a range with a high possibility of being able to be obtained by experiments, etc. Contrast like contrast. In addition, the shooting sensitivity and shutter speed are set in consideration of the correlation with each other. In addition, the reference image is preliminarily captured by the imaging unit 11 , and is an image showing the imaging result of the furnace lining 24 registered in the reference image database (Database) 141 (described later) of the recording unit 14 .

本實施方式中,拍攝靈敏度設定為「1」、「1.5」、「2」、……、「7」、「7.5」和「8」這16級。「1」相當於ISO靈敏度的100。拍攝靈敏度上升1時,每預定時間的光取入量成為2倍。即,拍攝靈敏度上升0.5時,所述取入量成為√2倍。此外,快門速度設定為「1/60」、「1/120」和「1/240」這3級。這些設定值和設定數僅為一例。In the present embodiment, the shooting sensitivity is set to 16 steps of "1", "1.5", "2", . . . , "7", "7.5", and "8". "1" is equivalent to 100 of the ISO sensitivity. When the imaging sensitivity is increased by 1, the light intake amount per predetermined time is doubled. That is, when the imaging sensitivity is increased by 0.5, the intake amount becomes √2 times. In addition, the shutter speed is set to three steps of "1/60", "1/120" and "1/240". These set values and set numbers are just an example.

此外,拍攝靈敏度和快門速度可以對應於所述(A)~(C)的各監視來設定。此時,拍攝部11接受拍攝控制部15的控制,在所述(A)~(C)的各監視中,以對應於所述各監視設定的拍攝靈敏度和快門速度來拍攝爐膛內襯24。In addition, the photographing sensitivity and shutter speed can be set in accordance with each of the above-mentioned monitoring (A) to (C). At this time, the imaging unit 11 is controlled by the imaging control unit 15, and in each of the monitoring (A) to (C), the furnace lining 24 is photographed at the imaging sensitivity and shutter speed set in accordance with the monitoring.

此外,在所述(A)~(C)的各監視中,也可以在拍攝部11開始拍攝多個圖像至結束為止的期間中,設定不拍攝所述圖像的預定期間。預定期間通過實驗等在所述(A)~(C)的各監視中設定為適當的值。例如,預定期間的起始點規定為開始拍攝而結束了預定枚數的拍攝時(例:4枚拍攝結束時),預定期間規定為從所述拍攝結束時起的數秒鐘(例:10秒鐘)。拍攝控制部15對應於所述(A)~(C)的各監視,以預定期間不拍攝的方式來控制拍攝部11。In addition, in each of the above-mentioned monitoring (A) to (C), during the period from which the imaging unit 11 starts to capture a plurality of images to the end, a predetermined period during which the images are not captured may be set. The predetermined period is set to an appropriate value in each of the above-mentioned monitoring (A) to (C) through experiments or the like. For example, the start point of the predetermined period is defined as the time when the shooting starts and the predetermined number of shots are finished (for example: when the shooting of 4 shots ends), and the predetermined period is defined as several seconds (for example: 10 seconds) from the end of the shooting bell). The imaging control unit 15 controls the imaging unit 11 so that imaging is not performed for a predetermined period in accordance with each of the above-mentioned monitoring (A) to (C).

如此,通過適當變更拍攝靈敏度、快門速度或拍攝時機來拍攝多個圖像,從而能取得顯現出亮度不同的爐膛內襯24(爐膛內襯24中所含的蒸鍍材料MA或被照射了電子束EB的蒸鍍材料MA)的多個圖像。In this way, by appropriately changing the imaging sensitivity, shutter speed, or imaging timing to capture a plurality of images, it is possible to obtain the furnace lining 24 (the vapor deposition material MA contained in the furnace lining 24 or the irradiated electrons) with different brightness. Multiple images of Evaporated Material MA) of beam EB.

另外,拍攝部11變更拍攝設定而拍攝的多個圖像的一例將在下文中說明。An example of a plurality of images captured by the imaging unit 11 changing the imaging setting will be described later.

此外,拍攝部11可以列舉CCD相機等。拍攝部11配置在如下位置:相對於經過正常位置時的爐膛內襯24的開口面中心的垂線(中心線CL),具有預定的角度α。通過從所述位置拍攝,監視裝置1能在拍攝部11拍攝的爐膛內襯24的圖像中,計算出爐膛內襯24朝向各種方向的傾斜量。In addition, a CCD camera etc. are mentioned as the imaging part 11. FIG. The imaging unit 11 is arranged at a position having a predetermined angle α with respect to the vertical line (center line CL) of the center of the opening surface of the furnace lining 24 when passing through the normal position. By capturing images from these positions, the monitoring device 1 can calculate the inclination amounts of the furnace lining 24 in various directions in the image of the furnace lining 24 captured by the imaging unit 11 .

(相機快門) 相機快門12利用拍攝控制部15的控制,在拍攝部11拍攝爐膛內襯24的時機,使拍攝部11的前方成為開放狀態,除此以外的時間成為閉鎖狀態。利用所述控制,在拍攝以外的時間段中,可以防止飛散的蒸鍍材料MA附著於拍攝部11的鏡頭(未圖示)。此外,也可以在拍攝部11的鏡頭前方粘接玻璃板,來防止飛散的蒸鍍材料MA附著於拍攝部11的鏡頭。(Camera Shutter) The camera shutter 12 is controlled by the imaging control unit 15 to open the front of the imaging unit 11 at the timing when the imaging unit 11 is imaging the furnace lining 24 , and is in the closed state at other times. With the above-described control, it is possible to prevent the scattered vapor deposition material MA from adhering to the lens (not shown) of the imaging unit 11 in a time period other than imaging. In addition, a glass plate may be bonded to the front of the lens of the imaging unit 11 to prevent the scattered vapor deposition material MA from adhering to the lens of the imaging unit 11 .

(通知部) 通知部13對利用所述監視系統的作業者進行各種通知。通知部13例如接受狀態判定部17的控制,當爐膛內襯24的位置、爐膛內襯24中的蒸鍍材料MA的熔體表面位置或電子束EB在所述蒸鍍材料MA中的照射位置分別偏離正常位置時,發出警告。通知部13例如由通過聲音輸出各種通知的麥克風和/或通過圖像輸出各種通知的顯示裝置來實現。(Notification Unit) The notification unit 13 provides various notifications to the operator using the monitoring system. The notification unit 13 is controlled by, for example, the state determination unit 17, and when the position of the furnace lining 24, the position of the melt surface of the vapor deposition material MA in the furnace lining 24, or the irradiation position of the electron beam EB in the vapor deposition material MA When they deviate from their normal positions, a warning is issued. The notification unit 13 is realized by, for example, a microphone that outputs various notifications by sound and/or a display device that outputs various notifications by images.

(記錄部) 記錄部14例如記錄控制部10所執行的各種控制程式等,例如由硬碟、快閃記憶體器等非易失性的記錄裝置構成。記錄部14例如記錄有:(1)表示監視處理的步驟的監視程式;(2)表示拍攝部11拍攝的圖像的資料;(3)表示成為與拍攝的圖像進行比較的比較對象的基準圖像的資料;(4)表示拍攝設定的資料;(5)控制部10的判定處理所採用的各種閾值(對預定範圍進行規定的值)。作為拍攝設定,可以列舉所述(A)~(C)的各監視中的拍攝部11的拍攝位置、拍攝靈敏度、快門速度和拍攝時機等。此外,記錄部14具備能登錄(記錄)基準圖像的基準圖像資料庫141。(Recording Unit) The recording unit 14 records, for example, various control programs executed by the control unit 10 and the like, and is composed of, for example, a non-volatile recording device such as a hard disk and a flash memory. The recording unit 14 records, for example: (1) a monitoring program showing the steps of the monitoring process; (2) data showing the image captured by the imaging unit 11 ; (3) a reference to be a comparison object with which the captured image is compared The data of the image; (4) the data indicating the shooting settings; and (5) various threshold values (values defining a predetermined range) used in the determination process of the control unit 10 . Examples of the imaging settings include the imaging position, imaging sensitivity, shutter speed, imaging timing, and the like of the imaging unit 11 in each of the above-mentioned monitoring (A) to (C). Further, the recording unit 14 includes a reference image database 141 in which reference images can be registered (recorded).

(基準圖像示例) 本實施方式中登錄有多個基準圖像。作為基準圖像,至少需要設置適合從多個圖像選擇出分析對象圖像的圖像。作為基準圖像,例如設置有爐膛內襯24的輪廓部分、蒸鍍材料MA的熔體表面位置(爐膛內襯24的內壁與熔體表面的邊界部分)、或清晰地顯現出向熔體表面照射的電子束EB的圖像。此外,如下的圖像被設置為基準圖像:通過分析(加工)該基準圖像,能推定所述輪廓部分、邊界部分或電子束EB的位置。此時,將推定的所述輪廓部分、邊界部分或電子束EB的位置與基準圖像相關聯,並記錄於記錄部14。(Example of Reference Image) In this embodiment, a plurality of reference images are registered. As a reference image, at least an image suitable for selecting an image to be analyzed from a plurality of images needs to be set. As a reference image, for example, the outline of the furnace lining 24, the melt surface position of the vapor deposition material MA (the boundary between the inner wall of the furnace lining 24 and the melt surface), or the melt surface clearly appearing Image of the irradiated electron beam EB. Further, an image is set as a reference image, by analyzing (processing) the reference image, the position of the contour portion, the boundary portion, or the electron beam EB can be estimated. At this time, the estimated position of the contour portion, the boundary portion, or the electron beam EB is associated with the reference image and recorded in the recording unit 14 .

本實施方式中,作為多個基準圖像,例如針對所述(A)~(C)的各監視分別在基準圖像資料庫141中登錄一個基準圖像。所述(A)的情況如後所述,根據拍攝的圖像中顯現出的爐膛內襯24的輪廓部分,監視爐膛內襯24的位置。因此,優選基準圖像清晰地顯現出所述輪廓部分,例如將顯現出新的爐膛內襯24的圖像設為基準圖像。此外,所述(B)或(C)的情況下,根據拍攝的圖像中顯現出的所述邊界部分或照射位置,監視所述熔體表面位置或照射位置。因此,例如將清晰地顯現出所述邊界部分或照射位置的圖像設為基準圖像。In the present embodiment, as a plurality of reference images, for example, one reference image is registered in the reference image database 141 for each of the monitors (A) to (C) described above. In the case of (A), as will be described later, the position of the furnace lining 24 is monitored based on the contour of the furnace lining 24 appearing in the captured image. Therefore, it is preferable that the reference image clearly shows the outline portion, and for example, an image showing the new furnace lining 24 is set as the reference image. Further, in the case of (B) or (C), the melt surface position or the irradiation position is monitored based on the boundary portion or the irradiation position appearing in the captured image. Therefore, for example, an image that clearly shows the boundary portion or the irradiation position is set as a reference image.

如此,在設定與所述(A)~(C)的各監視對應的圖像作為基準圖像的情況下,與基準圖像進行對比時,其結果為,在選擇的分析對象圖像中容易確定所述輪廓部分、邊界部分或照射位置的可能性增大。In this way, when an image corresponding to each of the above-mentioned monitoring (A) to (C) is set as a reference image, when compared with the reference image, the result is that the selected analysis target image is easily The possibility of determining the contour portion, the boundary portion or the irradiation position increases.

此外,例如也可以在基準圖像資料庫141中登錄以下的基準圖像群作為多個基準圖像: (a)包含爐膛內襯24的使用狀態彼此不同的多個基準圖像的基準圖像群; (b)包含供給到爐膛內襯24的蒸鍍材料MA的熔體表面位置彼此不同的多個基準圖像的基準圖像群; (c)包含爐膛內襯24相對於預定基準面的傾斜度彼此不同的多個基準圖像的基準圖像群,其中,所述傾斜度處在預定範圍內;以及 (d)包含從電子束源21射出的電子束EB在爐膛內襯24中的照射位置彼此不同的多個基準圖像的基準圖像群。圖5表示了所述(a)~(d)的基準圖像群的一例。另外,各基準圖像例如也可以是爐膛內襯24(和蒸鍍材料MA)處於紅熱狀態的圖像。In addition, for example, the following reference image groups may be registered in the reference image database 141 as a plurality of reference images: (a) Reference images including a plurality of reference images whose use states of the furnace lining 24 are different from each other group; (b) a reference image group including a plurality of reference images whose melt surface positions of the vapor deposition material MA supplied to the furnace lining 24 are different from each other; (c) a reference image group including the furnace lining 24 with respect to a predetermined reference plane A reference image group of a plurality of reference images having different inclinations from each other, wherein the inclinations are within a predetermined range; and (d) including the electron beam EB emitted from the electron beam source 21 in the furnace lining 24 A reference image group of a plurality of reference images whose irradiation positions are different from each other. FIG. 5 shows an example of the reference image groups of (a) to (d). In addition, each reference image may be, for example, an image in which the furnace lining 24 (and the vapor deposition material MA) are in a red-hot state.

圖5的(a)表示了與所述(a)對應的基準圖像群。所述示例中,作為爐膛內襯24的使用狀態,準備了爐膛內襯24基本未使用的狀態(新)、爐膛內襯24的內壁附著蒸鍍材料MA的狀態(半新)、以及蒸鍍材料MA沿著爐膛內襯24的內壁向爐膛內襯24的外部漏出的狀態(產生「溢出」的狀態)(舊)這三種。(a) of FIG. 5 shows the reference image group corresponding to the above (a). In the above example, as the used state of the furnace lining 24, a state in which the furnace lining 24 is basically unused (new), a state in which the vapor deposition material MA is adhered to the inner wall of the furnace lining 24 (used), and a vaporized state are prepared. There are three states in which the plating material MA leaks to the outside of the furnace lining 24 along the inner wall of the furnace lining 24 (a state in which "overflow" occurs) (old).

圖5的(b)中表示了與所述(b)對應的基準圖像群。所述示例中,準備了熔體表面位置處於爐膛內襯24的開口部附近的狀態(蒸鍍材料MA的量(熔體量)較多的狀態)、處於中間附近的狀態、以及處於底部附近的狀態這三種。The reference image group corresponding to the above-mentioned (b) is shown in (b) of FIG. 5 . In the above example, the state where the melt surface position is in the vicinity of the opening of the furnace lining 24 (the state in which the amount of vapor deposition material MA (the amount of melt) is large), the state in the vicinity of the middle, and the vicinity of the bottom are prepared. status of these three.

圖5的(c)中表示了與所述(c)對應的基準圖像群。所述示例中,準備了爐膛內襯24的位置處於正常位置時的三種基準圖像。在本實施方式中,所述預定基準面是指轉塔25的表面,所述預定範圍是指所述虛擬表面(包含爐膛內襯24的開口部的虛擬表面)相對於轉塔25的表面的傾斜度處於不妨礙蒸鍍處理的程度的範圍(數°左右的範圍)。圖5的(c)中,準備了在所述預定範圍內爐膛內襯24的傾斜度為0°的情況、爐膛內襯24左側上傾的情況、以及爐膛內襯24右側上傾的情況這三種基準圖像。關於左側上傾、右側上傾將在下文中說明。The reference image group corresponding to the above-mentioned (c) is shown in (c) of FIG. 5 . In the example, three reference images were prepared when the position of the furnace lining 24 was in the normal position. In this embodiment, the predetermined reference plane refers to the surface of the turret 25 , and the predetermined range refers to the distance between the virtual surface (the virtual surface including the opening of the furnace lining 24 ) relative to the surface of the turret 25 . The inclination is in a range (a range of about several degrees) that does not interfere with the vapor deposition process. In FIG. 5( c ), the case where the inclination of the furnace lining 24 is 0° within the predetermined range, the case where the left side of the furnace lining 24 is tilted upward, and the case where the right side of the furnace lining 24 is tilted upward are prepared. Three benchmark images. The inclination on the left side and the incline on the right side will be explained later.

圖5的(d)中表示了與所述(d)對應的基準圖像群。所述示例中,準備了照射位置為熔體表面的中央、偏左和偏右這三種基準圖像。The reference image group corresponding to the above-mentioned (d) is shown in (d) of FIG. 5 . In the above example, three reference images are prepared in which the irradiation positions are the center, the left, and the right of the melt surface.

另外,各基準圖像群中的基準圖像的種類也可以是兩種,還可以是四種以上。例如,在圖5的(c)中,也可以準備身前側上傾和/或裡側上傾(後述)的情況的基準圖像。此外,不必準備所述(a)~(d)的全部,只要對應於監視裝置1監視的監視對象而準備必要的基準圖像群即可。換句話說,只要準備所述(a)~(d)中的至少一方的基準圖像群即可。In addition, the types of reference images in each reference image group may be two or four or more. For example, in FIG. 5( c ), a reference image may be prepared for a case where the front side is tilted up and/or the back side is tilted up (described later). In addition, it is not necessary to prepare all of the above (a) to (d), and it is sufficient to prepare a necessary reference image group corresponding to the monitoring object monitored by the monitoring device 1 . In other words, it is sufficient to prepare at least one reference image group among the above (a) to (d).

(控制部) 控制部10總體控制監視裝置1。具體而言,控制部10具備拍攝控制部15、圖像選擇部16和狀態判定部17,以便高精度地判定蒸鍍裝置2的狀態,並且進行與判定結果對應的通知或蒸鍍處理的停止。(Control Unit) The control unit 10 controls the monitoring device 1 as a whole. Specifically, the control unit 10 includes an imaging control unit 15 , an image selection unit 16 , and a state determination unit 17 to determine the state of the vapor deposition apparatus 2 with high accuracy, and to notify or stop the vapor deposition process according to the determination result. .

拍攝控制部15控制拍攝部11。如上所述,拍攝控制部15在所述(A)~(C)的各監視中,使拍攝部11多次拍攝。拍攝控制部15在所述(A)~(C)的各監視中,選擇針對所述(A)~(C)的各監視設定的拍攝部11的拍攝位置、拍攝靈敏度和快門速度。此外,拍攝控制部15在所述(A)~(C)的各監視中,在結束預定枚數的拍攝之後,使計時器(未圖示)工作,對針對所述(A)~(C)的各監視設定的預定期間進行計時,並且停止拍攝部11的拍攝。而後,在從計時器收到經過了預定期間的通知時,再次開始拍攝。The imaging control unit 15 controls the imaging unit 11 . As described above, the imaging control unit 15 causes the imaging unit 11 to capture images a plurality of times in each of the above-mentioned monitoring (A) to (C). The photographing control unit 15 selects the photographing position, photographing sensitivity, and shutter speed of the photographing unit 11 set for each of the monitors (A) to (C) described above in each of the monitors (A) to (C). In addition, the imaging control unit 15 operates a timer (not shown) after completing the imaging of a predetermined number of images in each of the above-mentioned monitoring (A) to (C), and controls the monitoring for the above-mentioned (A) to (C). ) for the predetermined period of each monitoring setting, and the imaging by the imaging unit 11 is stopped. Then, when a notification from the timer that a predetermined period has elapsed is received, shooting is resumed.

例如,在所述(A)的監視中,拍攝控制部15在蒸鍍結束後,確認成膜速度為0(蒸鍍材料MA不飛散的狀態)。拍攝控制部15在所述確認結束後(例:蒸鍍結束約2~3分鐘後),將拍攝靈敏度依次改變為「6」、「5」、「4」和「3」,連續拍攝四次。拍攝控制部15對針對所述(A)的監視設定的預定期間(例:10秒)進行計時,並中斷該期間的拍攝。拍攝控制部15在確認經過了預定期間時,再次將拍攝靈敏度依次改變為「6」、「5」、「4」和「3」,連續拍攝四次。由此,取得共計八枚圖像。另外,快門速度設定為「1/60」或「1/120」。For example, in the monitoring of the above (A), the imaging control unit 15 confirms that the film formation rate is 0 (a state in which the vapor deposition material MA is not scattered) after the vapor deposition is completed. The photographing control unit 15 changes the photographing sensitivity to "6", "5", "4" and "3" in sequence after the confirmation (for example, about 2 to 3 minutes after the vapor deposition finishes), and continuously photographing four times . The imaging control unit 15 counts a predetermined period (eg, 10 seconds) set for the monitoring of the above (A), and interrupts imaging during this period. When confirming that the predetermined period has elapsed, the photographing control unit 15 changes the photographing sensitivity to "6", "5", "4", and "3" in this order, and continues photographing four times. Thereby, a total of eight images are acquired. In addition, the shutter speed is set to "1/60" or "1/120".

在所述(B)的監視中,拍攝控制部15在蒸鍍結束後,確認成膜速度為0。拍攝控制部15在所述確認結束之後,將拍攝靈敏度依次改變為「6」、「5」、「4」和「3」,連續拍攝四次。隨後,拍攝控制部15對針對所述(B)的監視設定的預定期間(例:10秒)進行計時,並中斷該期間的拍攝。拍攝控制部15在確認經過了預定期間時,再次將拍攝靈敏度依次改變為「6」、「5」、「4」和「3」,連續拍攝四次。如此,取得合計八枚圖像。另外,快門速度設定為「1/60」或「1/120」。In the monitoring of (B) described above, the imaging control unit 15 confirms that the deposition rate is zero after the vapor deposition is completed. After the confirmation, the photographing control unit 15 sequentially changes the photographing sensitivity to "6", "5", "4", and "3" to continuously photograph four times. Subsequently, the imaging control unit 15 counts a predetermined period (for example: 10 seconds) set for the monitoring of (B), and interrupts the imaging for this period. When confirming that the predetermined period has elapsed, the photographing control unit 15 changes the photographing sensitivity to "6", "5", "4", and "3" in this order, and continues photographing four times. In this way, a total of eight images are acquired. In addition, the shutter speed is set to "1/60" or "1/120".

在所述(C)的監視中,將拍攝靈敏度依次改變為「8」、「7.5」、「7」、「6.5」、「6」、「5.5」、「5」、「4.5」,連續拍攝八次。即,本實施方式中,針對所述(C)的監視設定的預定期間為0秒。如此,取得合計八枚圖像。另外,快門速度設定為「1/60」、「1/120」或「1/240」。In the monitoring of (C), the shooting sensitivity is changed to "8", "7.5", "7", "6.5", "6", "5.5", "5", "4.5" in order, and continuous shooting eight times. That is, in the present embodiment, the predetermined period set for the monitoring of (C) is 0 seconds. In this way, a total of eight images are acquired. In addition, the shutter speed is set to "1/60", "1/120" or "1/240".

本實施方式中,在蒸鍍(主蒸鍍)結束後且爐膛內襯24和蒸鍍材料MA因蒸鍍而紅熱的狀態下,進行用於所述(A)和(B)的監視的拍攝。所述紅熱的狀態在對基板100蒸鍍結束並停止電子束EB的照射後持續5分鐘左右。本實施方式中,在所述停止之後約2~3分鐘的時點進行所述拍攝。此外,與發生溢出的爐膛內襯24相比,新的爐膛內襯24的圖像存在變亮的傾向。換句話說,在發生溢出時,由於蒸鍍材料MA覆蓋爐膛內襯24的內壁,所以圖像存在變暗的傾向。特別是在蒸鍍材料MA為鋁、銀等金屬系的材料時,顯著變暗。而且,根據蒸鍍材料MA的熔體表面位置的不同,圖像的亮度也不同。在熔體表面位置較高時,爐膛內襯24和蒸鍍材料MA不易冷卻(容易維持紅熱狀態),另一方面,在熔體表面位置較低時容易冷卻。In the present embodiment, after the vapor deposition (main vapor deposition) is completed and the furnace lining 24 and the vapor deposition material MA are red-hot due to vapor deposition, imaging for monitoring of the above (A) and (B) is performed. . The red-hot state lasts for about 5 minutes after the deposition on the substrate 100 is completed and the irradiation of the electron beam EB is stopped. In this embodiment, the imaging is performed at a time point of about 2 to 3 minutes after the stop. In addition, the image of the new furnace lining 24 tends to be brighter than the overflowing furnace lining 24 . In other words, when the overflow occurs, since the vapor deposition material MA covers the inner wall of the furnace lining 24, the image tends to become dark. In particular, when the vapor deposition material MA is a metal-based material such as aluminum or silver, it becomes significantly darker. Furthermore, the brightness of the image differs depending on the position of the melt surface of the vapor deposition material MA. When the melt surface position is high, the furnace lining 24 and the vapor deposition material MA are not easily cooled (it is easy to maintain a red-hot state), and on the other hand, when the melt surface position is low, it is easy to cool.

如此,所述(A)和(B)的監視中,在紅熱狀態下拍攝的基礎上,根據爐膛內襯24的狀態或熔體表面位置等的不同,所述紅熱程度不同。因此,針對用於抽出所述輪廓部分或邊界部分的圖像分析而言,根據不同情況,存在拍攝到過亮的圖像的可能性。此時,在拍攝的圖像中,所述輪廓部分或邊界部分不清晰(所述部分的對比度降低),存在不能高精度地取得所述輪廓部分或邊界部分的可能性。In this way, in the monitoring of (A) and (B), the degree of the red heat is different depending on the state of the furnace lining 24 or the position of the melt surface, etc., on the basis of photographing in the red hot state. Therefore, for the image analysis for extracting the contour portion or the boundary portion, depending on the situation, there is a possibility that an image that is too bright is captured. At this time, in the captured image, the contour portion or the border portion is not clear (the contrast of the portion decreases), and there is a possibility that the contour portion or the border portion cannot be obtained with high accuracy.

因此,與蒸鍍結束後經過一段時間之後(蒸鍍導致的所述紅熱消失的狀態下)進行用於所述(C)的監視的拍攝相比,在所述(A)和(B)的拍攝中,拍攝靈敏度設定得更低。因此,可以期待取得亮度降低的圖像。此外,隨著時間的流逝,爐膛內襯24等的紅熱狀態變得穩定。通過在連續的多次拍攝中設置預定期間的拍攝待機期間,從而在所述預定期間後的拍攝中,能期待取得紅熱狀態受到抑制的圖像。另外,在一次的連續拍攝中,預定期間也可以設定多次。Therefore, compared with the photographing for the monitoring of the (C) after a certain period of time has elapsed after the vapor deposition (in a state where the red heat caused by the vapor deposition has disappeared), in the (A) and (B) During shooting, the shooting sensitivity is set lower. Therefore, it can be expected to obtain an image with reduced brightness. In addition, the red-hot state of the furnace lining 24 and the like becomes stable over time. By providing an imaging standby period of a predetermined period in a plurality of consecutive imaging, it can be expected to acquire an image in which the red-hot state is suppressed in imaging after the predetermined period. In addition, in one continuous shooting, the predetermined period may be set a plurality of times.

另一方面,與所述(A)和(B)的拍攝相比,用於所述(C)的監視的拍攝如上所述,可預見爐膛內襯24等不再紅熱。因此,在所述(C)的拍攝中,與所述(A)和(B)的拍攝相比,拍攝靈敏度設定得更高。On the other hand, compared to the shootings of (A) and (B), the shooting for the monitoring of (C) is as described above, and it is foreseeable that the furnace lining 24 and the like are no longer red hot. Therefore, in the photographing of the (C), the photographing sensitivity is set higher than the photographing of the (A) and (B).

在各監視中,通過如此拍攝多個圖像,能高精度地取得所述輪廓部分、邊界部分或照射位置的可能性增大。In each monitoring, by capturing a plurality of images in this way, the possibility that the contour portion, the boundary portion, or the irradiation position can be obtained with high accuracy increases.

另外,所述拍攝靈敏度、快門速度和預定期間的設定僅為一例。在各監視中只要能從拍攝的多個圖像中選擇出能分析所述爐膛內襯24的位置、熔體表面位置或照射位置的分析對象圖像,則所述拍攝靈敏度、快門速度和預定期間也可以設定為任意值。此外,在一次蒸鍍處理中,在所述(A)~(C)的監視中拍攝的圖像的枚數也不限於八枚,可以適當變更。In addition, the setting of the above-mentioned photographing sensitivity, shutter speed, and predetermined period is only an example. In each monitoring, as long as an analysis target image that can analyze the position of the furnace lining 24, the melt surface position, or the irradiation position can be selected from a plurality of images captured, the imaging sensitivity, shutter speed and predetermined The period can also be set to any value. In addition, in one vapor deposition process, the number of images captured in the monitoring of (A) to (C) is not limited to eight, and can be appropriately changed.

圖像選擇部16從拍攝部11拍攝的多個圖像中,選擇出與基準圖像最相關的圖像作為分析對象圖像。The image selection unit 16 selects an image most relevant to the reference image from among the plurality of images captured by the imaging unit 11 as an analysis target image.

具體而言,圖像選擇部16根據拍攝部11拍攝的各圖像的畫素值,計算出所述各圖像的表示相對於基準圖像的相關程度的相關值。所述相關值的計算中採用了歸一化相關的統計方法,例如採用模式匹配來計算所述各圖像與基準圖像之間的相關值(類似度)。Specifically, the image selection unit 16 calculates a correlation value indicating the degree of correlation with respect to the reference image of each image based on the pixel value of each image captured by the imaging unit 11 . In the calculation of the correlation value, a statistical method of normalized correlation is used, for example, pattern matching is used to calculate the correlation value (similarity) between the respective images and the reference image.

在歸一化相關中,由下式計算相關值。在下式中,I表示所述各圖像中的各畫素的畫素值(輝度值),M表示基準圖像中的各畫素的畫素值, n為所述各圖像和基準圖像中的全部畫素數。此外,橫槓(-)表示平均值。In the normalized correlation, the correlation value is calculated by the following formula. In the following formula, I represents the pixel value (brightness value) of each pixel in each of the images, M represents the pixel value of each pixel in the reference image, and n represents each of the images and the reference image. All picture primes in the image. Also, a horizontal bar (-) indicates the average value.

(式1) 在上式中,所述各圖像與基準圖像越類似,則越表示出接近100(%)的值。圖像選擇部16將所述(A)~(C)的各監視中拍攝的多個圖像中的相關值最接近100的圖像選擇為分析對象圖像。另外,作為計算相關值的對象,也可以是各圖像和基準圖像中的所述輪廓部分或邊界部分。例如,圖像選擇部16利用多個圖像和基準圖像中的所述輪廓部分的相關而選擇分析對象圖像時,可以抑制拍攝的圖像中的輪廓部分發生誤檢測的可能性。(Formula 1) In the above formula, the more similar each image is to the reference image, the more a value close to 100 (%) is expressed. The image selection unit 16 selects an image whose correlation value is closest to 100 among a plurality of images captured in each of the above-mentioned monitoring (A) to (C) as an analysis target image. In addition, the object of calculation of the correlation value may be the contour portion or the boundary portion in each image and the reference image. For example, when the image selection unit 16 selects the image to be analyzed by using the correlation between the plurality of images and the contour portion in the reference image, the possibility of erroneous detection of the contour portion in the captured image can be suppressed.

如上所述,本實施方式中,在所述(A)和(B)的監視時,拍攝紅熱狀態下的爐膛內襯24或蒸鍍材料MA。為了抑制其影響,監視裝置1首先使拍攝部11至少拍攝變更了拍攝靈敏度的多個爐膛內襯24。由此,可以取得顯現出亮度不同的爐膛內襯24或蒸鍍材料MA的多個圖像。而且,圖像選擇部16將拍攝部11取得的亮度不同的多個圖像與例如顯現出紅熱的爐膛內襯24或蒸鍍材料MA的基準圖像(能取得所述輪廓部分或邊界部分的圖像)進行對比,選擇出與基準圖像最相關的圖像。由此,可以選擇出容易為了進行蒸鍍裝置2的狀態判定而分析的圖像作為分析對象圖像。在拍攝的多個圖像中,由於將所述輪廓部分或邊界部分的對比度未降低、或者所述輪廓部分或邊界部分的對比度降低受到抑制的圖像選擇為分析對象圖像,所以能高精度地判定所述爐膛內襯24的位置或熔體表面位置。As described above, in the present embodiment, during the monitoring of (A) and (B), the furnace lining 24 or the vapor deposition material MA in the red-hot state is photographed. In order to suppress the influence, the monitoring device 1 first causes the imaging unit 11 to image at least the plurality of furnace liners 24 whose imaging sensitivity has been changed. Thereby, a plurality of images showing the furnace lining 24 or the vapor deposition material MA with different brightness can be acquired. Then, the image selection unit 16 compares a plurality of images with different brightness acquired by the imaging unit 11 and, for example, the furnace lining 24 showing red heat or the reference image of the vapor deposition material MA (the outline part or the boundary part can be acquired). images) to compare and select the image that is most relevant to the baseline image. As a result, an image that is easy to analyze in order to determine the state of the vapor deposition apparatus 2 can be selected as an analysis target image. Among a plurality of captured images, since the image in which the contrast of the outline portion or the boundary portion is not reduced, or the contrast reduction of the outline portion or the boundary portion is suppressed is selected as the image to be analyzed, it is possible to achieve high accuracy. Determine the position of the furnace lining 24 or the position of the melt surface.

此外,在所述(C)的監視時,在照射電子束EB的同時進行拍攝。因此,由於拍攝時的爐膛內襯24的周邊環境的亮度容易變動,所以起因於所述變動,例如存在拍攝的圖像中的電子束EB的照射位置不清晰的可能性。即使在這種情況下,拍攝部11至少拍攝變更了拍攝靈敏度的多個爐膛內襯24。而且,圖像選擇部16將顯現出亮度不同的蒸鍍材料MA的多個圖像與例如顯現出紅熱的蒸鍍材料MA的基準圖像進行對比,選擇出與基準圖像最相關的拍攝圖像。由此,與上述相同,由於能將容易分析的圖像選擇為分析對象圖像,所以能高精度地判定所述照射位置。In addition, in the monitoring of the above-mentioned (C), imaging is performed while irradiating the electron beam EB. Therefore, since the brightness of the surrounding environment of the furnace lining 24 at the time of photographing tends to fluctuate, there is a possibility that, for example, the irradiation position of the electron beam EB in the photographed image may not be clear due to the fluctuation. Even in this case, the imaging unit 11 images at least the plurality of furnace liners 24 whose imaging sensitivity has been changed. Then, the image selection unit 16 compares a plurality of images of the vapor deposition material MA showing different brightness with a reference image of the vapor deposition material MA showing red heat, for example, and selects a photographed image most relevant to the reference image picture. As a result, like the above, since an image that is easy to analyze can be selected as an analysis target image, the irradiation position can be determined with high accuracy.

此外,在設有所述預定期間的情況下,圖像選擇部16也可以在所述預定期間的前後進行拍攝圖像與基準圖像的對比。例如,在所述(A)和(B)的監視的情況下,圖像選擇部16將最初的四個圖像與基準圖像進行對比,選擇所述四個圖像中的與基準圖像最相關的一個圖像。隨後,圖像選擇部16將預定期間後的四個圖像與基準圖像進行對比,選擇所述四個圖像中的與基準圖像最相關的一個圖像。而後,圖像選擇部16將從預定期間前的四個圖像選擇出的圖像和從預定期間後的四個圖像選擇出的圖像中的與基準圖像更相關的圖像選擇為分析對象圖像。In addition, when the predetermined period is provided, the image selection unit 16 may compare the captured image and the reference image before and after the predetermined period. For example, in the case of monitoring of (A) and (B), the image selection unit 16 compares the first four images with the reference image, and selects the reference image among the four images. One of the most relevant images. Then, the image selection unit 16 compares the four images after a predetermined period with the reference image, and selects one image most related to the reference image among the four images. Then, the image selection unit 16 selects an image more related to the reference image among the images selected from the four images before the predetermined period and the images selected from the four images after the predetermined period as the reference image. Analyze object images.

此外,本實施方式中如上所述,設有爐膛內襯24的狀態不同的多個基準圖像。因此,圖像選擇部16使用從多個基準圖像選擇出的基準圖像,從拍攝部11拍攝的多個圖像選擇分析對象圖像。作為爐膛內襯24的狀態,例如可以列舉爐膛內襯24的使用狀態、爐膛內襯24內的蒸鍍材料MA的熔體表面位置、爐膛內襯24的傾斜度、以及電子束EB對爐膛內襯24內的蒸鍍材料MA進行照射的照射位置。In addition, in the present embodiment, as described above, a plurality of reference images with different states of the furnace lining 24 are provided. Therefore, the image selection unit 16 selects an image to be analyzed from the plurality of images captured by the imaging unit 11 using the reference image selected from the plurality of reference images. The state of the furnace lining 24 includes, for example, the use state of the furnace lining 24 , the melt surface position of the vapor deposition material MA in the furnace lining 24 , the inclination of the furnace lining 24 , and the effect of electron beam EB on the inside of the furnace. The irradiation position where the vapor deposition material MA in the liner 24 is irradiated.

圖像選擇部16例如通過分析取得的圖像,從而選擇出用於選擇分析對象圖像的基準圖像(用於選擇分析對象圖像的基準圖像)。此時,圖像選擇部16例如計算出設想為爐膛內襯24的輪廓部分、內壁或熔體表面附近的區域的輝度值,將所述區域的輝度值與基準圖像中的對應區域的輝度值進行對比。圖像選擇部16將具有與分析取得的區域的輝度值最接近的輝度值的基準圖像,選擇為用於選擇分析對象圖像的基準圖像。The image selection unit 16 selects a reference image for selecting an image to be analyzed (a reference image for selecting an image to be analyzed) by analyzing the acquired image, for example. At this time, the image selection unit 16 calculates, for example, the luminance value of an area assumed to be the contour portion of the furnace lining 24, the inner wall, or the vicinity of the melt surface, and compares the luminance value of the area with the luminance value of the corresponding area in the reference image. Brightness values are compared. The image selection unit 16 selects a reference image having a luminance value closest to the luminance value of the region obtained by analysis as a reference image for selecting an image to be analyzed.

此外,圖像選擇部16例如也可以根據對電子束源21施加的電流值的大小,選擇與爐膛內襯24的狀態對應的用於選擇分析對象圖像的基準圖像。此時,電流值的大小(範圍)也可以與多個基準圖像相關聯,且記錄於基準圖像資料庫141。圖像選擇部16在拍攝部11取得圖像時取得電流值,通過參照基準圖像資料庫141,從而選擇出用於選擇分析對象圖像的基準圖像。In addition, the image selection unit 16 may select a reference image for selecting an image to be analyzed according to the state of the furnace lining 24 , for example, based on the magnitude of the current value applied to the electron beam source 21 . At this time, the magnitude (range) of the current value may be associated with a plurality of reference images and recorded in the reference image database 141 . The image selection unit 16 acquires a current value when the imaging unit 11 acquires an image, and selects a reference image for selecting an image to be analyzed by referring to the reference image database 141 .

如此,圖像選擇部16可以從拍攝的圖像或電流值等資訊,確定爐膛內襯24的大致狀態,選擇出用於選擇分析對象圖像的基準圖像。另外,圖像選擇部16針對取得的圖像中的一個圖像(例:最初取得的圖像)進行所述分析或取得電流值,但是不限於此,也可以對多個圖像進行所述分析或取得電流值。In this way, the image selection unit 16 can determine the approximate state of the furnace lining 24 from the information such as the captured image and the current value, and can select a reference image for selecting an image to be analyzed. In addition, the image selection unit 16 performs the above analysis or acquires the current value for one of the acquired images (for example, the first acquired image), but the present invention is not limited to this, and the above may be performed for a plurality of images. Analyze or obtain current values.

此外,圖像選擇部16例如在分別設有一個基準圖像用於各監視時,將所述(A)~(C)的各監視中採用的基準圖像(與各監視相關聯的基準圖像)選擇為用於選擇分析對象圖像的基準圖像。此外,圖像選擇部16也可以對應於所述(A)~(C)的各監視,來選擇出用於選擇分析對象圖像的基準圖像。In addition, the image selection unit 16 , for example, when one reference image is provided for each monitoring, the reference image (reference image associated with each monitoring) used in each of the above-mentioned (A) to (C) monitoring image) is selected as the reference image for selecting the analysis object image. In addition, the image selection unit 16 may select a reference image for selecting an image to be analyzed in accordance with each of the monitors (A) to (C) described above.

本實施方式中,作為多個基準圖像設有所述(a)~(d)的基準圖像群。因此,圖像選擇部16可以對應於所述(A)~(C)的各監視,從所述(a)至(d)的基準圖像群中的至少一個基準圖像群,選擇出用於選擇所述分析對象圖像的基準圖像。In the present embodiment, the reference image groups (a) to (d) described above are provided as a plurality of reference images. Therefore, the image selection unit 16 can select a target image group from at least one reference image group among the reference image groups in the above (a) to (d) in accordance with each of the monitoring (A) to (C). for selecting the reference image of the analysis target image.

在此,作為與所述(A)~(C)的各監視對應的基準圖像群,優選設定為如下的基準圖像群:從拍攝的多個圖像容易地選擇出清晰顯現各監視中的必要部分(例:所述輪廓部分、邊界部分或照射位置)的圖像。此外,在各監視中,對選擇後的圖像進行使用基準圖像的處理時,優選也參考所述處理來選擇所述基準圖像群。Here, as a reference image group corresponding to each of the above-mentioned monitoring (A) to (C), it is preferable to set a reference image group that can be easily selected from a plurality of captured images to clearly show each monitoring. image of necessary parts (eg: the outline part, the boundary part or the irradiation position). In addition, in each monitoring, when processing using a reference image is performed on a selected image, the reference image group is preferably selected with reference to the processing.

所述(A)的監視的情況下,在拍攝的圖像中,優選的是選擇能取得所述輪廓部分(圖6所示的HL)的圖像。因此,作為圖像選擇部16採用的基準圖像群,例如設定為所述(a)或(c)。In the case of the monitoring of the above (A), among the captured images, it is preferable to select an image in which the outline portion (HL shown in FIG. 6 ) can be acquired. Therefore, the reference image group used by the image selection unit 16 is set to, for example, the above (a) or (c).

所述(B)的監視的情況下,在拍攝的圖像中,優選的是選擇能取得所述輪廓部分(圖7所示的EDb )和所述邊界部分(圖7所示的EDf )的圖像。因此,作為圖像選擇部16採用的基準圖像群,例如設定為所述(a)~(c)。In the case of the monitoring of (B), it is preferable to select the outline portion (ED b shown in FIG. 7 ) and the boundary portion (ED f shown in FIG. 7 ) in the captured image. )Image. Therefore, as the reference image group used by the image selection unit 16 , for example, the above-mentioned (a) to (c) are set.

所述(C)的監視的情況下,在拍攝的圖像中,優選的是選擇能取得熔體表面位置和所述照射位置的圖像。因此,作為圖像選擇部16採用的基準圖像群,例如設定為所述(b)或(d)。In the case of the monitoring of the above (C), among the captured images, it is preferable to select an image that can acquire the melt surface position and the irradiation position. Therefore, the reference image group used by the image selection unit 16 is set to, for example, (b) or (d) described above.

在如此設定的狀態下,圖像選擇部16例如對應於所述(A)~(C)的各監視(換句話說,對應於所述設定),從所述(a)至(d)的基準圖像群選擇至少一個基準圖像群,並從選擇的基準圖像群之中選擇出用於選擇分析對象圖像的基準圖像。在選擇用於選擇分析對象圖像的基準圖像的情況下,圖像選擇部16也與上述相同,可以利用取得的圖像的分析或電流值的取得來選擇所述基準圖像。此外,在所述(a)~(d)的基準圖像群中也可以設有預先選擇的基準圖像,此時,圖像選擇部16將所述基準圖像選擇為用於選擇分析對象圖像的基準圖像。In this state of setting, the image selection unit 16 corresponds to, for example, each of the monitors (A) to (C) described above (in other words, corresponds to the setting), from (a) to (d) above. The reference image group selects at least one reference image group, and selects a reference image for selecting an analysis target image from among the selected reference image groups. When selecting a reference image for selecting an image to be analyzed, the image selection unit 16 can select the reference image by analyzing the acquired image or acquiring the current value, as described above. In addition, a preselected reference image may be provided in the reference image group (a) to (d), and in this case, the image selection unit 16 selects the reference image for selecting the analysis target The base image for the image.

如此,圖像選擇部16在所述(A)~(C)的各監視中,將設想為最相關的一個代表性基準圖像選擇為用於選擇分析對象圖像的基準圖像。In this way, the image selection unit 16 selects one representative reference image assumed to be the most relevant in each of the above-mentioned monitoring (A) to (C) as the reference image for selecting the analysis target image.

狀態判定部17通過分析圖像選擇部16選擇的分析對象圖像,判定蒸鍍裝置2的狀態。狀態判定部17具備爐膛內襯位置監視部171、熔體表面位置監視部172和照射位置監視部173,以便監視所述(A)~(C)。The state determination unit 17 determines the state of the vapor deposition apparatus 2 by analyzing the image to be analyzed selected by the image selection unit 16 . The state determination part 17 is provided with the furnace lining position monitoring part 171, the melt surface position monitoring part 172, and the irradiation position monitoring part 173, and it monitors the said (A)-(C).

另外,狀態判定部17並不是必須具備爐膛內襯位置監視部171、熔體表面位置監視部172和照射位置監視部173的全部功能。狀態判定部17也可以僅具有所述三個功能中的一個或兩個功能。狀態判定部17只要具有使監視裝置1作為監視對象的功能即可。In addition, the state determination part 17 does not necessarily have all the functions of the furnace lining position monitoring part 171 , the melt surface position monitoring part 172 , and the irradiation position monitoring part 173 . The state determination unit 17 may have only one or two of the three functions described above. The state determination unit 17 only needs to have a function of making the monitoring device 1 a monitoring target.

爐膛內襯位置監視部171監視爐膛內襯24的位置。具體而言,爐膛內襯位置監視部171通過分析拍攝部11拍攝的圖像,從而判定爐膛內襯24的位置是否處於正常位置。例如,爐膛內襯位置監視部171在分析對象圖像和基準圖像中確定爐膛內襯24的輪廓部分,計算確定的爐膛內襯24的輪廓部分彼此的相關值,並且判定所述相關值是否處在預定範圍內。此外,爐膛內襯位置監視部171計算作為所述輪廓部分的一部分且相對的兩個位置的距離,並且判定所述距離是否處在預定範圍內。而且,如果相關值或距離處於預定範圍內,則爐膛內襯位置監視部171判定為爐膛內襯24的位置處在正常位置,另一方面,如果在範圍外,則判定為處在非正常位置。The furnace lining position monitoring unit 171 monitors the position of the furnace lining 24 . Specifically, the furnace lining position monitoring unit 171 determines whether or not the position of the furnace lining 24 is in a normal position by analyzing the image captured by the imaging unit 11 . For example, the furnace lining position monitoring unit 171 identifies the contour portion of the furnace lining 24 in the analysis target image and the reference image, calculates a correlation value between the identified contour portions of the furnace lining 24, and determines whether the correlation value is not within the predetermined range. Further, the furnace lining position monitoring section 171 calculates the distance between two positions that are a part of the contour portion and are opposed to each other, and determines whether the distance is within a predetermined range. Then, if the correlation value or distance is within a predetermined range, the furnace lining position monitoring unit 171 determines that the position of the furnace lining 24 is in a normal position, and on the other hand, if it is outside the range, it determines that it is in an abnormal position .

作為判定為處在非正常位置時的示例,如圖6所示,可以列舉「裡側上傾」、「身前側上傾」、「左側上傾」和「右側上傾」等爐膛內襯24的狀態。As an example when it is judged to be in an abnormal position, as shown in Fig. 6, furnace linings such as "inward tilting up", "frontward tilting up", "left tilting up" and "right tilting up" can be listed. 24 status.

「裡側上傾」是指爐膛內襯24的上側(接近y=0側)向轉塔25的上表面方向傾斜的狀態。「身前側上傾」是指爐膛內襯24的下側(從y=0偏向+y方向側)向轉塔25的上表面方向傾斜的狀態。「左側上傾」是指爐膛內襯24的左側(接近x=0側)向轉塔25的上表面方向傾斜的狀態。「右側上傾」是指爐膛內襯24的右側(從x=0偏向+x方向側)向轉塔25的上表面方向傾斜的狀態。"Inclining on the back side" refers to a state in which the upper side (closer to y=0 side) of the furnace lining 24 is inclined in the direction of the upper surface of the turret 25 . "Inclining on the front side" refers to a state in which the lower side of the furnace lining 24 (deviation from y=0 to the +y direction side) is inclined toward the upper surface of the turret 25 . "Left-side upward inclination" refers to a state in which the left side (closer to x=0 side) of the furnace lining 24 is inclined in the direction of the upper surface of the turret 25 . The "right-side upward inclination" refers to a state in which the right side of the furnace lining 24 (deviation from x=0 to the +x direction side) is inclined toward the upper surface of the turret 25 .

熔體表面位置監視部172監視對爐膛內襯24供給的蒸鍍材料MA的熔體表面位置。具體而言,熔體表面位置監視部172通過分析拍攝部11拍攝的圖像,從而檢測出所述熔體表面位置,並且判定所述熔體表面位置是否處於正常位置。例如圖7所示,熔體表面位置監視部172檢測出彼此相對的所述輪廓部分的一部分EDb 和所述邊界部分的一部分EDf 。而且,熔體表面位置監視部172計算出所述輪廓部分的一部分EDb 與所述邊界部分的一部分EDf 的距離Ds ,如果所述距離Ds 處於預定範圍內,則判定為熔體表面位置處在正常位置,另一方面,如果在範圍外則判定為處在非正常位置。The melt surface position monitoring unit 172 monitors the melt surface position of the vapor deposition material MA supplied to the furnace lining 24 . Specifically, the melt surface position monitoring unit 172 detects the melt surface position by analyzing the image captured by the imaging unit 11 , and determines whether the melt surface position is in a normal position. For example, as shown in FIG. 7 , the melt surface position monitoring unit 172 detects a part ED b of the contour part and a part ED f of the boundary part which are opposed to each other. Then, the melt surface position monitoring unit 172 calculates the distance D s between the part ED b of the contour part and the part ED f of the boundary part, and if the distance D s is within a predetermined range, it is determined as a melt surface The position is in the normal position, on the other hand, if it is outside the range, it is determined to be in the abnormal position.

此外,熔體表面位置監視部172在判定為非正常位置的情況下,且判定爐膛內襯24內的蒸鍍材料MA較少時,計算出朝向所述爐膛內襯24的蒸鍍材料MA的供給量,把表示所述供給量的資料向材料供給裝置3發送。材料供給裝置3收到所述資料時,以所述資料所示的供給量向所述爐膛內襯24供給蒸鍍材料MA。In addition, when the melt surface position monitoring unit 172 determines that it is an abnormal position and determines that the vapor deposition material MA in the furnace lining 24 is small, the melt surface position monitoring unit 172 calculates the amount of the vapor deposition material MA toward the furnace lining 24 . The supply amount is sent to the material supply device 3 with data indicating the supply amount. When the material supply device 3 receives the material, it supplies the vapor deposition material MA to the furnace lining 24 in the supply amount indicated by the material.

照射位置監視部173監視從電子束源21射出的電子束EB在爐膛內襯24中的照射位置。具體而言,照射位置監視部173通過分析拍攝部11拍攝的圖像,從而檢測出所述照射位置,並且判定所述照射位置是否處於正常位置。例如圖8所示,照射位置監視部173將拍攝的圖像中的具有預定的畫素值以上的畫素值且具有預定的面積以上的面積的範圍,確定為照射位置IA(照射區域),並確定所述照射位置的重心位置CP。而且,只要所述重心位置CP處在預定範圍內,則照射位置監視部173判定為照射位置IA處在正常位置,另一方面,如果在範圍外則判定為處在非正常位置。另外,也可以通過與電子束EB顯現在正常位置的基準圖像進行對比,來進行照射位置是否處於正常位置的判定。The irradiation position monitoring unit 173 monitors the irradiation position of the electron beam EB emitted from the electron beam source 21 in the furnace lining 24 . Specifically, the irradiation position monitoring unit 173 detects the irradiation position by analyzing the image captured by the imaging unit 11 , and determines whether the irradiation position is in a normal position. For example, as shown in FIG. 8 , the irradiation position monitoring unit 173 determines, as the irradiation position IA (irradiation area), a range having a pixel value equal to or greater than a predetermined pixel value and an area equal to or greater than a predetermined area in the captured image, And determine the center of gravity position CP of the irradiation position. The irradiation position monitoring unit 173 determines that the irradiation position IA is in the normal position as long as the center of gravity position CP is within the predetermined range, and determines that the irradiation position IA is in the abnormal position if it is outside the range. In addition, it is also possible to determine whether or not the irradiation position is in the normal position by comparing with a reference image in which the electron beam EB appears in the normal position.

此外,在處於範圍外的情況下,照射位置監視部173計算出使照射位置移動到正常位置的移動量(修正量)。而且,照射位置監視部173使蒸鍍裝置2按照所述修正量變更電子束EB的照射位置。在蒸鍍裝置2中,通過控制束偏轉用磁鐵22和極片23來進行照射位置的修正,以使照射位置成為正常位置。In addition, when it is outside the range, the irradiation position monitoring unit 173 calculates a movement amount (correction amount) for moving the irradiation position to the normal position. Then, the irradiation position monitoring unit 173 causes the vapor deposition apparatus 2 to change the irradiation position of the electron beam EB according to the correction amount. In the vapor deposition apparatus 2, the irradiation position is corrected by controlling the beam deflection magnet 22 and the pole piece 23 so that the irradiation position becomes the normal position.

此外,狀態判定部17在各監視中判定為處在非正常位置的情況下,判定為蒸鍍裝置2中發生異常,控制通知部13發出警告。此外,狀態判定部17在所述判定的情況下,停止蒸鍍裝置2的蒸鍍處理。具體而言,狀態判定部17使蒸鍍裝置2所具有的電源(未圖示)對蒸鍍裝置2的各部分的供電停止。In addition, when the state determination part 17 determines that it is an abnormal position in each monitoring, it determines that an abnormality has occurred in the vapor deposition apparatus 2, and the control notification part 13 issues a warning. In addition, the state determination part 17 stops the vapor deposition process of the vapor deposition apparatus 2 in the case of the said determination. Specifically, the state determination unit 17 stops the power supply of the power supply (not shown) included in the vapor deposition apparatus 2 to each part of the vapor deposition apparatus 2 .

另外,在所述判定的情況下,狀態判定部17並不是必須執行所述警告通知和蒸鍍裝置2的供電停止雙方。例如,在從正常位置的偏移量處於一定程度的範圍內時,狀態判定部17也可以判定為處於可能給蒸鍍處理帶來妨礙而最好避免繼續執行蒸鍍處理的狀態(需要保養的狀態,所謂的「輕故障」),僅進行警告通知。另一方面,當所述偏移量超過一定程度的範圍時,狀態判定部17判定為處在不僅給蒸鍍處理帶來妨礙而且安全性也不能保證的狀態(所謂的「重故障」),至少停止蒸鍍處理。In addition, in the case of the above-mentioned determination, the state determination unit 17 does not necessarily need to execute both of the above-mentioned warning notification and power supply stop of the vapor deposition apparatus 2 . For example, when the amount of deviation from the normal position is within a certain range, the state determination unit 17 may determine that the vapor deposition process may be hindered and the vapor deposition process should not continue to be executed (maintenance required). status, so-called "minor failure"), only warning notifications are made. On the other hand, when the offset exceeds a certain range, the state determination unit 17 determines that the vapor deposition process is not only hindered but also the safety cannot be guaranteed (so-called "major failure"), At least stop the evaporation process.

(拍攝圖像示例) 圖9~圖11表示了所述(A)~(C)的各監視中拍攝的多個圖像的一例。圖9是爐膛內襯24的位置監視時拍攝的圖像的一例,圖10是熔體表面位置監視時拍攝的圖像的一例,圖11是照射位置監視時拍攝的圖像的一例。在圖9~圖11中,被斜線包圍的圖像是由圖像選擇部16選擇為分析對象圖像的圖像。(Example of Captured Image) FIGS. 9 to 11 show an example of a plurality of images captured in each of the above-mentioned monitoring (A) to (C). FIG. 9 is an example of an image captured during position monitoring of the furnace lining 24 , FIG. 10 is an example of an image captured during melt surface position monitoring, and FIG. 11 is an example of an image captured during irradiation position monitoring. In FIGS. 9 to 11 , the images surrounded by diagonal lines are images selected as the analysis target images by the image selection unit 16 .

另外,圖9和圖10的示例中,列舉了快門速度「1/60」和「1/120」時拍攝的情況。此外,圖11的示例中,列舉了快門速度「1/60」、「1/120」和「1/240」時拍攝的情況。可是,在各監視中,只要設定上述的任意一個快門速度(例:「1/60」)即可。換句話說,本例中,只要能取得拍攝靈敏度和拍攝時機不同的八枚圖像作為多個圖像即可。In addition, in the example of FIG. 9 and FIG. 10, the case of shooting at the shutter speed "1/60" and "1/120" is illustrated. In addition, in the example of FIG. 11, the case of shooting at the shutter speeds of "1/60", "1/120", and "1/240" is listed. However, in each monitoring, it is sufficient to set any one of the above-mentioned shutter speeds (for example, "1/60"). In other words, in this example, it is only necessary to obtain eight images with different shooting sensitivities and shooting timings as a plurality of images.

但是,為了提高選擇出與基準圖像更相關的圖像的可能性,在各監視中,以增加與基準圖像進行對比的多個圖像的數量為目的,也可以取得與多個快門速度分別對應的圖像。換句話說,也可以將圖9~圖11所示的全部圖像作為與基準圖像進行對比的對比對象。However, in order to increase the possibility of selecting an image more relevant to the reference image, in each monitoring, in order to increase the number of a plurality of images to be compared with the reference image, it is also possible to obtain a plurality of shutter speeds corresponding to the reference image. corresponding images respectively. In other words, all of the images shown in FIGS. 9 to 11 may be used as comparison objects to be compared with the reference image.

圖9和圖10的示例中,不論快門速度為「1/60」的情況,還是快門速度為「1/120」的情況,圖像選擇部16都把最相關的圖像No.1選擇為分析對象圖像。圖11的示例中,圖像選擇部16在快門速度為「1/60」時,將相關值最高的圖像No.2選擇為分析對象圖像,在快門速度為「1/120」和「1/240」時,將最相關的圖像No.1選擇為分析對象圖像。In the examples of FIGS. 9 and 10 , regardless of whether the shutter speed is “1/60” or the shutter speed is “1/120”, the image selection unit 16 selects the most relevant image No. 1 as Analyze object images. In the example of FIG. 11 , when the shutter speed is “1/60”, the image selection unit 16 selects the image No. 2 with the highest correlation value as the analysis target image, and when the shutter speed is “1/120” and “ 1/240", the most relevant image No. 1 is selected as the analysis target image.

另外,在各快門速度的八枚圖像中,當能選擇兩個以上的圖像作為最相關的圖像時,圖像選擇部16也可以利用預先決定的方法選擇一個圖像作為分析對象圖像。作為所述方法,例如可以列舉將最相關的多個圖像中的圖像編號(No.)最小的圖像(最先拍攝的圖像)作為分析對象圖像的方法。In addition, if two or more images can be selected as the most relevant images among the eight images at each shutter speed, the image selection unit 16 may select one image as the analysis target image by a predetermined method. picture. As the method, for example, the image with the smallest image number (No.) among the most relevant images (the image captured first) can be cited as the image to be analyzed.

(監視系統的處理流程) 接下來,利用圖12,說明監視系統的處理流程的一例。圖12是表示監視系統的處理流程的一例的流程圖。(Processing Flow of Monitoring System) Next, an example of the processing flow of the monitoring system will be described with reference to FIG. 12 . FIG. 12 is a flowchart showing an example of the processing flow of the monitoring system.

首先,在將蒸鍍材料MA向基板100蒸鍍之前,蒸鍍裝置2通過從電子束源21射出電子束EB並照射爐膛內襯24內的蒸鍍材料MA,從而進行所述蒸鍍材料MA的熔化(處理步驟(以後稱為S)1)。接著,蒸鍍裝置2通過提高光強度並向蒸鍍材料MA照射電子束EB而使爐膛內襯24內的蒸鍍材料MA蒸發,從而對基板100進行成膜(主蒸鍍)(S2)。First, before vapor deposition of the vapor deposition material MA on the substrate 100 , the vapor deposition apparatus 2 emits an electron beam EB from the electron beam source 21 and irradiates the vapor deposition material MA in the furnace lining 24 , thereby depositing the vapor deposition material MA. of melting (processing step (hereafter referred to as S) 1). Next, the vapor deposition apparatus 2 evaporates the vapor deposition material MA in the furnace lining 24 by increasing the light intensity and irradiates the vapor deposition material MA with the electron beam EB to form a film (main vapor deposition) on the substrate 100 ( S2 ).

接下來,當蒸鍍裝置2的成膜處理結束時,監視裝置1在確認成膜速度為0之後,進行爐膛內襯24內的蒸鍍材料MA的熔體表面管理(S3;對應於所述(B)的監視)。具體而言,熔體表面位置監視部172使拍攝設定成為用於監視熔體表面位置的設定(熔體表面位置拍攝設定)。拍攝部11接受拍攝控制部15的控制,在所述拍攝設定下拍攝多個圖像。圖像選擇部16使用熔體表面位置監視用的基準圖像,從所述多個圖像選擇出適合用於監視熔體表面位置的分析對象圖像。而且,熔體表面位置監視部172通過對分析對象圖像進行分析,從而判定熔體表面位置是否處於正常位置。熔體表面位置監視部172在判定為熔體表面位置處在非正常位置時,執行通知部13的警告通知和/或蒸鍍裝置2的停止。此外,熔體表面位置監視部172在判定為非正常位置的情況下且判定為爐膛內襯24內的蒸鍍材料MA較少時,計算出朝向所述爐膛內襯24的蒸鍍材料MA的供給量,並把表示所述供給量的資料向材料供給裝置3發送。Next, when the film forming process of the vapor deposition device 2 is completed, the monitoring device 1 confirms that the film forming speed is 0, and then performs the melt surface management of the vapor deposition material MA in the furnace lining 24 (S3; corresponding to the above (B) Surveillance). Specifically, the melt surface position monitoring unit 172 makes the imaging setting a setting for monitoring the melt surface position (melt surface position imaging setting). The imaging unit 11 is controlled by the imaging control unit 15 and captures a plurality of images under the above-described imaging settings. The image selection unit 16 selects an analysis target image suitable for monitoring the position of the melt surface from the plurality of images using the reference image for monitoring the position of the melt surface. Then, the melt surface position monitoring unit 172 determines whether or not the melt surface position is in a normal position by analyzing the image to be analyzed. The melt surface position monitoring unit 172 executes a warning notification by the notification unit 13 and/or a stop of the vapor deposition apparatus 2 when it is determined that the melt surface position is at an abnormal position. In addition, when the melt surface position monitoring unit 172 determines that it is an abnormal position and determines that the vapor deposition material MA in the furnace lining 24 is small, the melt surface position monitoring unit 172 calculates the amount of the vapor deposition material MA toward the furnace lining 24 . The supply amount is sent, and data indicating the supply amount is sent to the material supply device 3 .

此外,當蒸鍍裝置2的成膜處理結束時,監視裝置1在確認成膜速度為0之後,進行爐膛內襯24的位置管理(S4;對應於所述(A)的監視)。爐膛內襯位置監視部171在確認了成膜速度為0之後經過了預定期間後(例:數秒後。但是,是在開始熔體表面管理之後。),開始所述位置管理的處理。另外,爐膛內襯位置監視部171也可以通過從熔體表面位置監視部172接收拍攝部11在S3的處理中拍攝了多個圖像的通知,來開始所述位置管理的處理。Further, when the film formation process of the vapor deposition apparatus 2 is completed, the monitoring apparatus 1 confirms that the film formation speed is zero, and then performs position management of the furnace lining 24 ( S4 ; monitoring corresponding to the above (A)). The furnace lining position monitoring unit 171 starts the processing of the position management after a predetermined period (eg, after several seconds. However, after the start of the melt surface management) has elapsed after confirming that the deposition rate is zero. In addition, the furnace lining position monitoring unit 171 may start the processing of the position management by receiving a notification from the melt surface position monitoring unit 172 that the imaging unit 11 has captured a plurality of images in the process of S3.

爐膛內襯位置監視部171首先指示蒸鍍裝置2從電子束源21的燈絲僅釋放出光子。蒸鍍裝置2收到所述指示時,使電子束源21作為照明光源發揮功能。此外,爐膛內襯位置監視部171在多個圖像拍攝之前,將拍攝設定從熔體表面位置拍攝設定切換到用於監視爐膛內襯24的位置的拍攝設定(爐膛內襯位置拍攝設定)。拍攝部11接受拍攝控制部15的控制,在所述拍攝設定下拍攝多個圖像。圖像選擇部16使用爐膛內襯24的位置監視用的基準圖像,從所述多個圖像選擇出適合用於監視爐膛內襯24的位置的分析對象圖像。而且,爐膛內襯位置監視部171通過對分析對象圖像進行分析,判定爐膛內襯24的位置是否處於正常位置。當判定為爐膛內襯24的位置處在非正常位置時,爐膛內襯位置監視部171執行通知部13的警告通知和/或蒸鍍裝置2的停止。The furnace lining position monitoring unit 171 first instructs the vapor deposition device 2 to emit only photons from the filament of the electron beam source 21 . When the vapor deposition apparatus 2 receives the instruction, the electron beam source 21 functions as an illumination light source. Further, the furnace lining position monitoring unit 171 switches the imaging setting from the melt surface position imaging setting to the imaging setting for monitoring the position of the furnace lining 24 (furnace lining position imaging setting) before capturing a plurality of images. The imaging unit 11 is controlled by the imaging control unit 15 and captures a plurality of images under the above-described imaging settings. The image selection unit 16 selects an analysis target image suitable for monitoring the position of the furnace lining 24 from the plurality of images using the reference image for monitoring the position of the furnace lining 24 . Then, the furnace lining position monitoring unit 171 determines whether or not the position of the furnace lining 24 is in the normal position by analyzing the image to be analyzed. When it is determined that the position of the furnace lining 24 is at an abnormal position, the furnace lining position monitoring unit 171 performs a warning notification from the notification unit 13 and/or stops the vapor deposition apparatus 2 .

此外,在監視裝置1中,爐膛內襯位置監視部171在用於監視爐膛內襯位置的多個圖像的拍攝結束之後,將所述內容通知給熔體表面位置監視部172。熔體表面位置監視部172將拍攝設定從爐膛內襯位置拍攝設定切換到熔體表面位置拍攝設定。另外,所述處理時機只要在爐膛內襯24的拍攝之前(後述的S6的處理之前)即可。Further, in the monitoring device 1, the furnace lining position monitoring unit 171 notifies the melt surface position monitoring unit 172 of the contents after capturing the plurality of images for monitoring the furnace lining position. The melt surface position monitoring unit 172 switches the imaging setting from the furnace lining position imaging setting to the melt surface position imaging setting. In addition, the above-mentioned processing timing should just be before the imaging|photography of the furnace lining 24 (before the processing of S6 mentioned later).

此外,在S3的處理中,熔體表面位置監視部172將表示所述供給量的資料向材料供給裝置3發送時,材料供給裝置3向作為所述供給量的計算對象的爐膛內襯24供給蒸鍍材料MA(S5)。In addition, in the process of S3, when the melt surface position monitoring unit 172 transmits the data indicating the supply amount to the material supply device 3, the material supply device 3 supplies the furnace lining 24 to which the supply amount is calculated. Vapor deposition material MA (S5).

接下來,蒸鍍裝置2在材料供給裝置3所進行的蒸鍍材料MA的供給處理結束時,與S1同樣,進行爐膛內襯24內的蒸鍍材料MA的熔化。監視裝置1在蒸鍍裝置2的所述熔化處理結束時,進行爐膛內襯24內的蒸鍍材料MA的熔體表面管理(S6;對應於所述(B)的監視)。所述處理與S3中的熔體表面位置監視部172的處理相同。Next, when the supply process of the vapor deposition material MA by the material supply device 3 is completed, the vapor deposition apparatus 2 melts the vapor deposition material MA in the furnace lining 24 in the same manner as in S1 . The monitoring apparatus 1 performs melt surface management of the vapor deposition material MA in the furnace lining 24 when the melting process of the vapor deposition apparatus 2 is completed ( S6 ; monitoring corresponding to the above (B)). The processing is the same as the processing of the melt surface position monitoring unit 172 in S3.

另外,S3的處理用於管理對基板100成膜之後的熔體表面狀態,S6的處理用於管理供給蒸鍍材料MA之後的熔體表面狀態。In addition, the process of S3 is for managing the melt surface state after film formation on the substrate 100 , and the process of S6 is for managing the melt surface state after supplying the vapor deposition material MA.

此外,在監視裝置1中,熔體表面位置監視部172在用於監視熔體表面位置的多個圖像的拍攝結束之後,將所述內容通知給照射位置監視部173。照射位置監視部173將拍攝設定從熔體表面位置拍攝設定切換到用於監視照射位置的拍攝設定(照射位置拍攝設定)。另外,所述處理時機只要在爐膛內襯24的拍攝之前(S7的處理之前)即可。Moreover, in the monitoring apparatus 1, the melt surface position monitoring unit 172 notifies the irradiation position monitoring unit 173 of the content after capturing of the plurality of images for monitoring the melt surface position is completed. The irradiation position monitoring unit 173 switches the imaging setting from the melt surface position imaging setting to the imaging setting for monitoring the irradiation position (irradiation position imaging setting). In addition, the processing timing may be before the imaging of the furnace lining 24 (before the processing of S7).

接下來,監視裝置1進行電子束EB對爐膛內襯24內的蒸鍍材料MA進行照射的照射位置管理(S7;對應於所述(C)的監視)。具體而言,拍攝部11接受拍攝控制部15的控制,在照明位置拍攝設定下拍攝多個圖像。圖像選擇部16使用照射位置監視用的基準圖像,從所述多個圖像選擇出適合用於監視照射位置的分析對象圖像。而後,照射位置監視部173通過對分析對象圖像進行分析,從而判定照射位置是否處於正常位置。當判定為照射位置處在非正常位置時,照射位置監視部173執行通知部13的警告通知和/或蒸鍍裝置2的停止。Next, the monitoring device 1 performs irradiation position management of the electron beam EB irradiating the vapor deposition material MA in the furnace lining 24 ( S7 ; monitoring corresponding to the above (C)). Specifically, the imaging unit 11 is controlled by the imaging control unit 15 and captures a plurality of images under the illumination position imaging setting. The image selection unit 16 selects an analysis target image suitable for monitoring the irradiation position from the plurality of images using the reference image for monitoring the irradiation position. Then, the irradiation position monitoring unit 173 determines whether or not the irradiation position is in a normal position by analyzing the image to be analyzed. When it is determined that the irradiation position is at an abnormal position, the irradiation position monitoring unit 173 performs a warning notification from the notification unit 13 and/or stops the vapor deposition apparatus 2 .

此外,此時照射位置監視部173決定與照射位置對應的修正量,並向蒸鍍裝置2發送所述修正量的資料。蒸鍍裝置2根據所述資料進行照射位置的修正,以使照射位置成為正常位置。In addition, at this time, the irradiation position monitoring unit 173 determines the correction amount corresponding to the irradiation position, and transmits the data of the correction amount to the vapor deposition apparatus 2 . The vapor deposition apparatus 2 corrects the irradiation position based on the data so that the irradiation position becomes a normal position.

此外,在監視裝置1中,照射位置監視部173在用於監視照射位置的多個圖像的拍攝結束之後,將所述內容通知給熔體表面位置監視部172。熔體表面位置監視部172將拍攝設定從照射位置拍攝設定切換到熔體表面位置拍攝設定。另外,所述處理時機只要在下次的爐膛內襯24的拍攝之前(S3的處理之前)即可。Moreover, in the monitoring apparatus 1, the irradiation position monitoring part 173 notifies the melt surface position monitoring part 172 of the said content after completion|finish of imaging|photography of several images for monitoring an irradiation position. The melt surface position monitoring unit 172 switches the imaging setting from the irradiation position imaging setting to the melt surface position imaging setting. In addition, the processing timing may be before the next imaging of the furnace lining 24 (before the processing of S3 ).

另外,爐膛內襯位置監視部171、熔體表面位置監視部172和照射位置監視部173的處理順序不限於所述順序。In addition, the processing order of the furnace lining position monitoring part 171, the melt surface position monitoring part 172, and the irradiation position monitoring part 173 is not limited to the above-mentioned order.

(監視裝置的處理流程) 接下來,利用圖13,說明監視裝置1的處理流程(監視方法)的一例。圖13是表示監視裝置1的處理流程的一例的流程圖。(Processing Flow of Monitoring Device) Next, an example of the processing flow (monitoring method) of the monitoring device 1 will be described with reference to FIG. 13 . FIG. 13 is a flowchart showing an example of the processing flow of the monitoring device 1 .

首先,在所述(A)~(C)的各監視(圖12的S3、S4、S6和S7的各處理)中,拍攝控制部15控制拍攝部11,以狀態判定部17設定的拍攝設定,多次拍攝爐膛內襯24(S11;拍攝步驟)。在取得多個圖像時,拍攝控制部15將所述內容通知給圖像選擇部16。First, in each of the above-mentioned monitoring (A) to (C) (each process of S3 , S4 , S6 , and S7 in FIG. 12 ), the photographing control unit 15 controls the photographing unit 11 , and the photographing setting set by the state determining unit 17 is used. , the furnace lining 24 is photographed multiple times (S11; photographing step). When acquiring a plurality of images, the imaging control unit 15 notifies the image selection unit 16 of the content.

圖像選擇部16接收所述通知,並從多個基準圖像(基準圖像群)選擇出與所述(A)~(C)的各監視對應的一個基準圖像(用於選擇分析對象圖像的基準圖像)(S12)。與各監視相關聯的基準圖像設有一個時,將所述基準圖像選擇為用於選擇分析對象圖像的基準圖像。而且,圖像選擇部16在各監視中,將拍攝的多個圖像與選擇的基準圖像進行對比,針對各圖像計算出相關值(S13)。圖像選擇部16在各監視中,將計算出的相關值中的具有最大的相關值(最大相關值)的圖像選擇為分析對象圖像(S14;圖像選擇步驟)。圖像選擇部16將選擇了分析對象圖像的內容通知給狀態判定部17。The image selection unit 16 receives the notification, and selects one reference image (for selecting an analysis target) corresponding to each of the monitoring of (A) to (C) from the plurality of reference images (reference image group). image reference image) (S12). When there is one reference image associated with each monitor, the reference image is selected as a reference image for selecting an image to be analyzed. Then, in each monitoring, the image selection unit 16 compares the plurality of images captured with the selected reference image, and calculates a correlation value for each image ( S13 ). In each monitoring, the image selection unit 16 selects an image having the largest correlation value (maximum correlation value) among the calculated correlation values as an analysis target image ( S14 ; image selection step). The image selection unit 16 notifies the state determination unit 17 of the selection of the analysis target image.

狀態判定部17通過執行與各監視對應的處理(爐膛內襯位置監視部171、熔體表面位置監視部172或照射位置監視部173所進行的處理),來判定蒸鍍裝置2的狀態是否為正常狀態(S15;狀態判定步驟)。當狀態判定部17判定在所述(A)~(C)的全部監視中蒸鍍裝置2的狀態正常時(S15為「是」),結束所述處理流程。另一方面,當狀態判定部17判定在所述(A)~(C)的任意一個監視中蒸鍍裝置2的狀態為非正常時(S15為「否」),從通知部13通知警告(S16)。此外,狀態判定部17在重故障時,使蒸鍍裝置2停止(S17)。The state determination unit 17 determines whether or not the state of the vapor deposition apparatus 2 is the state of the vapor deposition apparatus 2 by executing processing corresponding to each monitoring (processing performed by the furnace lining position monitoring unit 171 , the melt surface position monitoring unit 172 , or the irradiation position monitoring unit 173 ). Normal state (S15; state determination step). When the state determination unit 17 determines that the state of the vapor deposition apparatus 2 is normal in all the monitoring of (A) to (C) (YES in S15 ), the process flow ends. On the other hand, when the state determination unit 17 determines that the state of the vapor deposition apparatus 2 is abnormal during any one of the above-mentioned monitoring (A) to (C) (NO in S15 ), the notification unit 13 notifies a warning ( S16). In addition, the state determination part 17 stops the vapor deposition apparatus 2 at the time of a serious failure (S17).

(主要效果) 在監視裝置1中,拍攝部11多次拍攝爐膛內襯24。此外,拍攝部11通過改變拍攝靈敏度、快門速度和拍攝時機中的至少任意一方來進行拍攝。因此,可以取得亮度不同的多個圖像。(Main Effect) In the monitoring device 1 , the imaging unit 11 images the furnace lining 24 a plurality of times. Further, the imaging unit 11 performs imaging by changing at least any one of imaging sensitivity, shutter speed, and imaging timing. Therefore, a plurality of images with different luminances can be acquired.

而且,圖像選擇部16從拍攝部11拍攝的多個圖像中,將與顯現出爐膛內襯24的基準圖像最相關的圖像選擇為分析對象圖像。因此,能選擇出具有容易進行圖像分析的亮度的圖像。狀態判定部17分析如此選擇的分析對象圖像,來判定蒸鍍裝置2的狀態。Then, the image selection unit 16 selects an image most relevant to the reference image in which the furnace lining 24 appears from among the plurality of images captured by the imaging unit 11 as an analysis target image. Therefore, it is possible to select an image with a brightness that is easy to perform image analysis. The state determination unit 17 analyzes the image to be analyzed thus selected, and determines the state of the vapor deposition apparatus 2 .

當僅拍攝一次並設為分析對象圖像時,在拍攝了過亮或過暗的圖像的情況下,存在即使分析所述圖像也不能確定所述輪廓部分等分析對象的可能性。此時,需要調整拍攝設定並再次拍攝。此外,如上所述,根據爐膛內襯24的狀態或熔體表面位置等的不同,爐膛內襯24和蒸鍍材料MA的紅熱程度或紅熱時間不同,所以存在取得過亮的圖像作為分析對象圖像的可能性。此時,也存在不能確定分析對象的可能性。When the image is captured only once and is set as an analysis target image, when an image that is too bright or too dark is captured, there is a possibility that the analysis target such as the contour portion cannot be identified even if the image is analyzed. In this case, you need to adjust the shooting settings and shoot again. In addition, as described above, depending on the state of the furnace lining 24, the position of the melt surface, etc., the degree of red heat or the red heating time of the furnace lining 24 and the vapor deposition material MA are different, so there is an image that is too bright to be analyzed. image possibilities. In this case, there is a possibility that the analysis target cannot be identified.

另一方面,按照監視裝置1,可以在考慮了紅熱狀態的情況下,將拍攝的最容易分析的圖像選擇為分析對象圖像。因此,與上述情況相比,不依賴於爐膛內襯24的周邊環境,能高精度地判定蒸鍍裝置2的狀態的可能性增大。此外,按照監視裝置1,能夠降低再次拍攝的可能性。因此,能節省再次進行拍攝的繁瑣工作或時間。On the other hand, according to the monitoring apparatus 1, taking into consideration the red heat state, it is possible to select a photographed image that is most easily analyzed as an analysis target image. Therefore, compared with the above-mentioned case, the possibility that the state of the vapor deposition apparatus 2 can be determined with high accuracy is increased without depending on the surrounding environment of the furnace lining 24 . Furthermore, according to the monitoring apparatus 1, the possibility of re-imaging can be reduced. Therefore, it is possible to save troublesome work or time for re-shooting.

(實施方式2) 本發明的實施方式2的說明如下。另外,為了便於說明,針對與上述實施方式中說明的部件具有相同功能的部件,標注相同的附圖標記,並省略其說明。(Embodiment 2) The description of Embodiment 2 of the present invention is as follows. In addition, for convenience of description, the same reference numerals are attached to the components having the same functions as the components described in the above-described embodiments, and the description thereof will be omitted.

實施方式1中說明了從多個基準圖像中選擇出用於選擇分析對象圖像的一個基準圖像的情況,但是也可以選擇多個。In Embodiment 1, the case where one reference image for selecting the image to be analyzed is selected from among the plurality of reference images has been described, but a plurality of reference images may be selected.

例如,在所述(A)~(C)的各監視中,也可以將選擇的用於選擇分析對象圖像的基準圖像的數量預先設定為2以上,並且圖像選擇部16選擇所述數量的基準圖像。此時,例如圖像選擇部16如實施方式1所記載的那樣分析取得的圖像,從輝度值與所述圖像所含的區域(例:設想為所述輪廓部分的區域)的輝度值(與所述區域對應的基準圖像中的區域的輝度值)接近的基準圖像,按照該設定的數量依次選擇。在利用電流值來選擇時,圖像選擇部16例如選擇與取得的電流值對應的基準圖像,並且在不超過所述設定的數量的範圍內選擇出與所述電流值附近的值對應的基準圖像。For example, in each of the above-mentioned monitoring (A) to (C), the number of reference images to be selected for selecting the analysis target image may be set to two or more in advance, and the image selection unit 16 may select the above-mentioned number of benchmark images. In this case, for example, the image selection unit 16 analyzes the acquired image as described in Embodiment 1, and determines the luminance value from the luminance value of a region included in the image (for example, a region assumed to be the outline portion). The reference images that are close to (the luminance value of the region in the reference image corresponding to the region) are selected in order according to the set number. When selecting by the current value, the image selection unit 16 selects, for example, a reference image corresponding to the acquired current value, and selects a reference image corresponding to a value near the current value within a range not exceeding the set number. Baseline image.

此外,在用於各監視而分別設有多個基準圖像時,在各監視中,也可以計算出拍攝的多個圖像的每一個與多個基準圖像的每一個的相關值。換句話說,此時計算出拍攝部11拍攝的全部圖像與基準圖像資料庫141中記錄的全部基準圖像之間的相關值。Furthermore, when a plurality of reference images are provided for each monitoring, a correlation value between each of the plurality of images captured and each of the plurality of reference images may be calculated in each monitoring. In other words, at this time, the correlation values between all the images captured by the imaging unit 11 and all the reference images recorded in the reference image database 141 are calculated.

此外,圖像選擇部16也可以將拍攝部11拍攝的圖像的每一個僅與多個基準圖像的一部分進行對比。例如,圖像選擇部16也可以對應於所述(A)~(C)的各監視,從基準圖像資料庫141中記錄的多個基準圖像,選擇出與拍攝部11拍攝的圖像進行對比的基準圖像。In addition, the image selection unit 16 may compare each of the images captured by the imaging unit 11 with only a part of the plurality of reference images. For example, the image selection unit 16 may select an image captured by the imaging unit 11 from a plurality of reference images recorded in the reference image database 141 in accordance with each of the above-mentioned monitoring (A) to (C). Baseline image for comparison.

例如,圖像選擇部16也可以對應於所述(A)~(C)的各監視,選擇所述(a)至(d)的基準圖像群中的至少一個基準圖像群,作為與在各監視中拍攝的圖像進行對比的多個基準圖像。如實施方式1所記載的那樣,當所述(a)至(d)的基準圖像群與所述(A)~(C)的各監視相關聯時,圖像選擇部16在各監視中選擇對應的基準圖像群。For example, the image selection unit 16 may select at least one reference image group among the reference image groups (a) to (d) as the corresponding monitoring of each of the above (A) to (C). A plurality of reference images for comparing images captured in each monitoring. As described in Embodiment 1, when the reference image groups (a) to (d) are associated with each of the above-mentioned monitoring (A) to (C), the image selection unit 16 performs each monitoring. Select the corresponding reference image group.

圖像選擇部16將上述的那樣作為用於選擇分析對象圖像的基準圖像而選擇的多個基準圖像的每一個,與拍攝部11拍攝的多個圖像的每一個進行對比,計算出彼此的相關值。而且,圖像選擇部16將計算出的相關值中的具有最高的相關值的圖像選擇為分析對象圖像。換句話說,圖像選擇部16從拍攝部11拍攝的多個圖像之中,將分別與多個基準圖像的至少一部分最相關的圖像選擇為分析對象圖像。The image selection unit 16 compares each of the plurality of reference images selected as the reference image for selecting the analysis target image as described above with each of the plurality of images captured by the imaging unit 11 to calculate out the correlation values with each other. Then, the image selection unit 16 selects an image having the highest correlation value among the calculated correlation values as an analysis target image. In other words, the image selection unit 16 selects an image most relevant to at least a part of the plurality of reference images from among the plurality of images captured by the imaging unit 11 as the analysis target image.

如此,即使用於選擇分析對象圖像的基準圖像存在多個的情況下,與實施方式1同樣,可以從多個圖像中,將最容易取得各監視的圖像分析中所必要的部分的圖像選擇為分析對象圖像。因此,在各監視中,能高精度地判定蒸鍍裝置2的狀態。此外,由於用於選擇分析對象圖像的基準圖像為多個,所以能更廣泛地確認拍攝部11拍攝的圖像與基準圖像的相關。In this way, even when there are a plurality of reference images for selecting an image to be analyzed, as in Embodiment 1, it is possible to most easily obtain the part necessary for image analysis for each monitoring from the plurality of images. The image selected as the analysis object image. Therefore, in each monitoring, the state of the vapor deposition apparatus 2 can be determined with high accuracy. In addition, since there are a plurality of reference images for selecting the image to be analyzed, the correlation between the images captured by the imaging unit 11 and the reference images can be confirmed more widely.

(實施方式3) 本發明的實施方式3的說明如下。另外,為了便於說明,針對與上述實施方式中說明的部件具有相同功能的部件,標注相同的附圖標記,並省略其說明。(Embodiment 3) The description of Embodiment 3 of the present invention is as follows. In addition, for convenience of description, the same reference numerals are attached to the components having the same functions as the components described in the above-described embodiments, and the description thereof will be omitted.

實施方式1和實施方式2中,在基準圖像資料庫141中登錄有多個基準圖像。但是不限於此,基準圖像資料庫141中也可以僅登錄所述(A)~(C)的監視所共通的一個基準圖像。In Embodiment 1 and Embodiment 2, a plurality of reference images are registered in the reference image database 141 . However, it is not limited to this, and only one reference image common to the monitoring of (A) to (C) may be registered in the reference image database 141 .

作為分析對象圖像,期望選擇如下圖像:所述(A)的監視中能高精度抽出所述輪廓部分;所述(B)的監視中能高精度抽出所述輪廓部分和邊界部分;以及所述(C)的監視中能高精度抽出所述照射位置。因此,作為基準圖像,優選清晰地顯現出所述輪廓部分、邊界部分和照射位置的圖像。此時,作為基準圖像,例如只要顯現出新的爐膛內襯24、且顯現出照射到處在正常位置的熔體表面位置的重心附近的電子束EB的圖像即可。As an analysis target image, it is desirable to select an image in which the contour portion can be extracted with high accuracy during the monitoring of (A); the contour portion and the boundary portion can be extracted with high accuracy during the monitoring of (B); and During the monitoring of (C), the irradiation position can be extracted with high accuracy. Therefore, as a reference image, an image in which the outline portion, the boundary portion, and the irradiation position are clearly visualized is preferable. At this time, as the reference image, for example, the new furnace lining 24 may be displayed, and the image of the electron beam EB irradiated to the vicinity of the center of gravity of the melt surface position at the normal position may be displayed.

此外,圖像選擇部16例如利用拍攝的各圖像中的爐膛內襯24的輪廓部分與基準圖像中的爐膛內襯24的輪廓部分的相關來選擇分析對象圖像時,優選在基準圖像中清晰地顯現出所述輪廓部分。此時,作為基準圖像,只要是顯現出新的爐膛內襯24的圖像即可。In addition, when the image selection unit 16 selects the image to be analyzed by, for example, using the correlation between the contour portion of the furnace lining 24 in each captured image and the contour portion of the furnace lining 24 in the reference image, it is preferable to select the image to be analyzed in the reference image. The outline is clearly seen in the image. At this time, the reference image may be any image showing the new furnace lining 24 .

如此,即使登錄的基準圖像為一個,也可以從多個圖像中,將最容易取得各監視的圖像分析中所必要的部分的圖像選擇為分析對象圖像。因此,在各監視中,能高精度地判定蒸鍍裝置2的狀態。In this way, even if there is only one registered reference image, from among a plurality of images, the image that is most easily acquired for the part necessary for the image analysis of each monitor can be selected as the analysis target image. Therefore, in each monitoring, the state of the vapor deposition apparatus 2 can be determined with high accuracy.

(軟體的實現示例) 監視裝置1的控制模組(特別是控制部10的各功能模組)可以由積體電路(IC晶片)等形成的邏輯電路(硬體)來實現,也可以採用CPU(中央處理器:Central Processing Unit)由軟體實現。(Example of Implementation of Software) The control module of the monitoring device 1 (in particular, each functional module of the control unit 10 ) may be implemented by a logic circuit (hardware) formed of an integrated circuit (IC chip) or the like, or a CPU may be used. (Central Processing Unit: Central Processing Unit) is implemented by software.

在後者的情況下,監視裝置1具備用於執行實現各功能的軟體亦即程式的命令的CPU、將所述程式和各種資料以電腦(或CPU)可讀取取的方式記錄的ROM(唯讀記憶體:Read Only Memory)或記錄裝置(將它們稱為「記錄媒體」)、以及將所述程式展開的RAM(隨機存取記憶體:Random Access Memory)等。而且,電腦(或CPU)通過從所述記錄媒體讀取所述程式並執行,來實現本發明的目的。作為所述記錄媒體,可以採用「非易失性的有形的媒體」,例如帶、盤、卡、半導體記憶體、可程式設計的邏輯電路等。此外,所述程式也可以借助能傳送所述程式的任意的傳輸媒體(通信網路和廣播波等)提供給所述電腦。另外,也可以通過由電子傳輸而將所述程式具體化的、埋入傳輸波的資料信號的方式,來實現本發明的一個方式。In the latter case, the monitoring device 1 includes a CPU for executing commands of programs, which are software for realizing each function, and a ROM (only the program) that records the programs and various data readable by a computer (or CPU). A read memory (Read Only Memory) or a recording device (referred to as a "recording medium"), a RAM (Random Access Memory) for developing the program, and the like. Furthermore, the computer (or CPU) realizes the object of the present invention by reading the program from the recording medium and executing it. As the recording medium, a "non-volatile tangible medium" such as a tape, a disk, a card, a semiconductor memory, a programmable logic circuit, or the like can be used. In addition, the program may be provided to the computer via any transmission medium (communication network, broadcast wave, etc.) capable of transmitting the program. In addition, one aspect of the present invention may be realized by a method in which the program is embodied by electronic transmission and embedded in a data signal of a transmission wave.

(總結) (1)為了解決上述課題,本發明一個方式的監視裝置進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視裝置包括:拍攝部,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇部,從所述拍攝部拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定部,通過分析所述圖像選擇部選擇的分析對象圖像,來判定所述蒸鍍裝置的狀態。(Summary) (1) In order to solve the above-mentioned problems, a monitoring device according to an aspect of the present invention monitors a vapor deposition device that forms a film on a substrate by vapor-depositing a vapor deposition material on a substrate, the The monitoring device includes an imaging unit that takes a container for holding the vapor deposition material included in the vapor deposition apparatus as an imaging object and performs multiple images, and an image selection unit that selects a plurality of images captured by the imaging unit among the images, an image most related to a reference image, which is an image showing the container, is selected as an analysis target image; and a state determination unit that selects by analyzing the image selection unit to determine the state of the vapor deposition apparatus.

按照所述的結構,從多次拍攝的容器的圖像選擇出與基準圖像最相關的圖像作為分析對象圖像。而且,使用所述分析對象圖像,判定蒸鍍裝置的狀態。因此,能高精度地判定蒸鍍裝置的狀態。According to the above-described structure, the image most relevant to the reference image is selected as the analysis target image from the images of the container captured multiple times. Then, the state of the vapor deposition apparatus is determined using the analysis target image. Therefore, the state of the vapor deposition apparatus can be determined with high accuracy.

(2)而且,本發明一個方式的監視裝置也可以在所述(1)的結構的基礎上,所述拍攝部每當拍攝所述圖像時,改變拍攝靈敏度和快門速度中的至少任意一方。(2) Further, in the monitoring device according to one aspect of the present invention, in addition to the configuration of (1), the imaging unit may change at least one of imaging sensitivity and shutter speed every time the image is captured .

通常,根據容器自身或其周邊的亮度的不同,有時拍攝的圖像中顯現的容器的對比度較低,與基準圖像的對比變得困難。按照所述的結構,由於每次拍攝時改變拍攝靈敏度和/或快門速度,所以能拍攝亮度不同的容器。因此,能選擇出適合與基準圖像進行對比的容器的圖像作為分析對象圖像。In general, depending on the brightness of the container itself or its surroundings, the contrast of the container appearing in the captured image may be low, making it difficult to compare with the reference image. According to the above-described structure, since the photographing sensitivity and/or shutter speed are changed every photographing, containers with different brightness can be photographed. Therefore, the image of the container suitable for comparison with the reference image can be selected as the analysis target image.

(3)而且,本發明一個方式的監視裝置也可以在所述(2)的結構的基礎上,在所述多個圖像的拍攝開始至結束為止的期間中,設有不拍攝所述圖像的預定期間。(3) Further, in addition to the configuration of (2), the monitoring device according to one aspect of the present invention may be configured to not capture the images during the period from the start to the end of capturing the plurality of images. Like the scheduled period.

按照所述的結構,通過設置不拍攝圖像的預定期間,取得具有適合與基準圖像對比的亮度的容器圖像的可能性增大。According to the above-described configuration, by setting a predetermined period during which no image is captured, the possibility of obtaining a container image having a brightness suitable for comparison with the reference image increases.

(4)而且,本發明一個方式的監視裝置也可以在所述(2)或(3)的結構的基礎上,所述狀態判定部將所述分析對象圖像中顯現的(A)所述容器的位置、(B)供給到所述容器的蒸鍍材料的熔體表面位置、以及(C)從束射出源射出的電子束在所述容器中的照射位置中的任意一個位置作為分析對象進行分析,來判定所述蒸鍍裝置的狀態,所述拍攝部以對應於所述分析對象設定的所述拍攝靈敏度和所述快門速度進行拍攝。(4) Further, in the monitoring device according to one aspect of the present invention, in addition to the configuration of (2) or (3), the state determination unit may display (A) described in the analysis target image. Any one of the position of the container, (B) the position of the melt surface of the vapor deposition material supplied to the container, and (C) the irradiation position of the electron beam emitted from the beam emission source in the container is used as the object of analysis The analysis is performed to determine the state of the vapor deposition device, and the imaging unit performs imaging at the imaging sensitivity and shutter speed set in accordance with the analysis target.

按照所述的結構,可以利用與所述(A)~(C)的分析對象對應的拍攝靈敏度和/或快門速度來拍攝容器。換句話說,取得對應於各分析對象的適合與基準圖像進行對比的容器圖像的可能性增大。According to the above-mentioned configuration, the container can be photographed with the photographing sensitivity and/or shutter speed corresponding to the analysis target of the above (A) to (C). In other words, the possibility of obtaining a container image suitable for comparison with the reference image corresponding to each analysis object increases.

(5)而且,本發明一個方式的監視裝置也可以在所述(1)~(4)中任意一個的結構的基礎上,設有所述容器的狀態不同的多個所述基準圖像,所述圖像選擇部使用從多個所述基準圖像選擇的基準圖像,從所述多個圖像選擇所述分析對象圖像。(5) Furthermore, in addition to the configuration of any one of (1) to (4), the monitoring device according to one aspect of the present invention may be provided with a plurality of the reference images in which the state of the container is different, The image selection unit selects the analysis target image from the plurality of images using a reference image selected from the plurality of reference images.

按照所述的結構,可以將拍攝的多個圖像與容器的狀態不同的多個基準圖像中的至少一個基準圖像進行對比。因此,能參照容器的狀態來選擇分析對象圖像。According to the above-described structure, the plurality of images captured can be compared with at least one reference image among the plurality of reference images in which the state of the container is different. Therefore, the analysis target image can be selected with reference to the state of the container.

(6)而且,本發明一個方式的監視裝置也可以在所述(5)的結構的基礎上,多個所述基準圖像是如下的基準圖像群中的至少一個基準圖像群:(a)包含所述容器的使用狀態彼此不同的多個基準圖像的基準圖像群;(b)包含供給到所述容器的所述蒸鍍材料的熔體表面位置彼此不同的多個基準圖像的基準圖像群;(c)包含所述容器相對於預定基準面的傾斜度彼此不同的多個基準圖像的基準圖像群,其中,所述傾斜度處在預定範圍內;以及(d)包含從束射出源射出的電子束在所述容器中的照射位置彼此不同的多個基準圖像的基準圖像群。(6) Further, in the monitoring device according to one aspect of the present invention, in addition to the configuration of (5), the plurality of reference images may be at least one reference image group among the following reference image groups: ( a) a reference image group including a plurality of reference images in which the use states of the container are different from each other; (b) a plurality of reference images including a plurality of reference images in which the positions of the melt surfaces of the vapor deposition materials supplied to the container are different from each other (c) a reference image group comprising a plurality of reference images whose inclinations of the container are different from each other with respect to a predetermined reference plane, wherein the inclinations are within a predetermined range; and ( d) A reference image group including a plurality of reference images in which the irradiation positions of the electron beams emitted from the beam emission source in the container are different from each other.

按照所述的結構,可以將拍攝的圖像與所述(a)~(d)的基準圖像群中的至少一個進行對比。能參考所述容器的使用狀態、蒸鍍材料的熔體表面位置、容器的傾斜度或電子束的照射位置,來選擇分析對象圖像。According to the above configuration, the captured image can be compared with at least one of the reference image groups in (a) to (d). The analysis target image can be selected with reference to the use state of the container, the melt surface position of the vapor deposition material, the inclination of the container, or the irradiation position of the electron beam.

(7)而且,本發明一個方式的監視裝置也可以在所述(6)的結構的基礎上,所述狀態判定部將所述分析對象圖像中顯現的(A)所述容器的位置、(B)供給到所述容器的蒸鍍材料的熔體表面位置、以及(C)從束射出源射出的電子束在所述容器中的照射位置中的任意一個位置作為分析對象進行分析,來判定所述蒸鍍裝置的狀態,所述圖像選擇部對應於所述分析對象,從所述(a)至(d)的基準圖像群中的至少一個基準圖像群,選擇出在選擇所述分析對象圖像時所使用的基準圖像。(7) Further, in the monitoring device according to one aspect of the present invention, in addition to the configuration of (6), the state determination unit may determine (A) the position of the container, (B) The position of the melt surface of the vapor deposition material supplied to the container, and (C) any position of the irradiation position of the electron beam emitted from the beam emission source in the container is analyzed as an analysis object to analyze. The state of the vapor deposition apparatus is determined, and the image selection unit selects at least one reference image group out of the reference image groups in (a) to (d) corresponding to the analysis target, and selects the selected The reference image used when analyzing the image of the object.

按照所述的結構,可以對應於所述(A)~(C)的分析對象,選擇所述(a)~(d)的基準圖像群中的至少一個所含的基準圖像,並與拍攝的圖像進行對比。因此,對於各分析對象,能高精度地判定蒸鍍裝置的狀態。According to the above configuration, a reference image included in at least one of the reference image groups (a) to (d) can be selected corresponding to the analysis objects of (A) to (C), and combined with The captured images are compared. Therefore, for each analysis object, the state of the vapor deposition apparatus can be determined with high accuracy.

(8)而且,本發明的一個方式的監視方法進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視方法包括:拍攝步驟,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇步驟,從所述拍攝步驟拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定步驟,通過分析所述圖像選擇步驟選擇的分析對象圖像,來判定所述蒸鍍裝置的狀態。(8) Further, a monitoring method according to one aspect of the present invention monitors a vapor deposition device that forms a film on a substrate by vapor deposition of a vapor deposition material on the substrate, the monitoring method comprising: photographing The step is to take the container for holding the vapor deposition material provided by the vapor deposition device as the photographing object, and photographing is performed for multiple times; the image selection step is to select from the plurality of images photographed in the photographing step. selecting an image most relevant to a reference image as an analysis target image, the reference image being an image showing the container; and a state determination step of analyzing the analysis target image selected by the image selection step , to determine the state of the vapor deposition device.

按照所述的方法,能發揮與所述(1)的結構同樣的效果。According to the above-mentioned method, the same effects as those of the above-mentioned configuration (1) can be exhibited.

另外,本發明的各方式的監視裝置也可以由電腦來實現,監視裝置的監視控制程式通過使電腦作為所述監視裝置所具備的各部分(軟體要素)進行動作而使所述監視裝置由電腦實現,此時,監視控制程式以及記錄該監視控制程式的電腦可讀取記錄媒體也包含在本發明的範圍內。In addition, the monitoring device of each aspect of the present invention may be realized by a computer, and the monitoring control program of the monitoring device operates the computer as each part (software element) included in the monitoring device, thereby causing the monitoring device to be implemented by the computer. In this case, the monitoring and control program and the computer-readable recording medium in which the monitoring and control program is recorded are also included in the scope of the present invention.

(備註) 本發明不限於上述的各實施方式,可以在申請專利範圍所示的範圍內進行各種變形,適當組合不同的實施方式中分別公開的技術內容而得到的實施方式也包含在本發明的技術範圍內。(Remarks) The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and embodiments obtained by appropriately combining technical contents disclosed in different embodiments are also included in the scope of the present invention. within the technical scope.

1‧‧‧監視裝置2‧‧‧蒸鍍裝置3‧‧‧材料供給裝置10‧‧‧控制部11‧‧‧拍攝部12‧‧‧相機快門13‧‧‧通知部14‧‧‧記錄部15‧‧‧拍攝控制部16‧‧‧圖像選擇部17‧‧‧狀態判定部21‧‧‧電子束源(束射出源)22‧‧‧束偏轉用磁鐵23‧‧‧極片24‧‧‧爐膛內襯(容器)24A‧‧‧爐膛內襯24B‧‧‧其他爐膛內襯25‧‧‧轉塔26‧‧‧轉塔旋轉部27‧‧‧基板旋轉部30‧‧‧隔熱件(反射器)100‧‧‧基板141‧‧‧基準圖像資料庫171‧‧‧爐膛內襯位置監視部172‧‧‧熔體表面位置監視部173‧‧‧照射位置監視部AX‧‧‧旋轉軸CL‧‧‧中心線CP‧‧‧重心位置Ds‧‧‧距離EB‧‧‧電子束EDb‧‧‧輪廓部分的一部分EDf‧‧‧邊界部分的一部分HL‧‧‧輪廓部分IA‧‧‧照射位置MA‧‧‧蒸鍍材料S1~S7、S11~S17‧‧‧處理步驟α‧‧‧角度1‧‧‧Monitoring device 2‧‧‧Vapor deposition device 3‧‧‧Material supply device 10‧‧‧Control unit 11‧‧‧Photography unit 12‧‧‧Camera shutter 13‧‧‧Notifying unit 14‧‧‧Recording unit 15‧‧‧Image capture control part 16‧‧‧Image selection part 17‧‧‧State determination part 21‧‧‧Electron beam source (beam emission source) 22‧‧‧Magnet for beam deflection 23‧‧‧pole piece 24‧ ‧‧Furnace lining (vessel) 24A‧‧‧Furnace lining 24B‧‧‧Other furnace linings 25‧‧‧Turret 26‧‧‧Rotating part of turret 27‧‧‧Rotating part of base plate 30‧‧‧Insulation Parts (reflectors) 100‧‧‧Substrate 141‧‧‧Reference image database 171‧‧‧ Furnace lining position monitoring part 172‧‧‧Melt surface position monitoring part 173‧‧‧Irradiation position monitoring part AX‧‧ ‧Rotation axis CL‧‧‧Center line CP‧‧‧Center of gravity position D s ‧‧‧Distance EB‧‧‧Electron beam ED b ‧‧‧Part of contour ED f ‧‧‧Part of boundary HL‧‧‧Contour Part IA‧‧‧Irradiation position MA‧‧‧Evaporation material S1~S7, S11~S17‧‧‧Processing step α‧‧‧angle

圖1是表示本發明實施方式1的監視裝置的具體結構的一例的方塊圖。 圖2是表示本發明實施方式1的監視系統的一例的圖。 圖3是表示本發明實施方式1的蒸鍍裝置所具備的轉塔的結構的一例的圖。 圖4是所述蒸鍍裝置所具備的爐膛內襯及其周邊的斷面示意圖。 圖5是表示所述監視裝置所具備的基準圖像資料庫中登錄的基準圖像群的一例的圖,(a)表示包含爐膛內襯的使用狀態不同的多個基準圖像的基準圖像群的一例,(b)表示包含熔體表面位置不同的多個基準圖像的基準圖像群的一例,(c)表示包含在預定範圍內爐膛內襯的傾斜度不同的多個基準圖像的基準圖像群的一例,(d)表示包含電子束的照射位置不同的多個基準圖像的基準圖像群的一例。 圖6是用於說明爐膛內襯的位置的判定處理的圖。 圖7是用於說明熔體表面位置的判定處理的圖。 圖8是用於說明照射位置的判定處理的圖。 圖9表示在爐膛內襯的位置監視中拍攝的多個圖像的一例。 圖10表示在熔體表面位置監視中拍攝的多個圖像的一例。 圖11表示在照射位置監視中拍攝的多個圖像的一例。 圖12是表示所述監視系統的處理流程的一例的流程圖。 圖13是表示所述監視裝置的處理流程的一例的流程圖。FIG. 1 is a block diagram showing an example of a specific configuration of a monitoring device according to Embodiment 1 of the present invention. FIG. 2 is a diagram showing an example of a monitoring system according to Embodiment 1 of the present invention. 3 is a diagram showing an example of a configuration of a turret included in the vapor deposition apparatus according to Embodiment 1 of the present invention. FIG. 4 is a schematic cross-sectional view of a furnace lining and its periphery included in the vapor deposition apparatus. 5 : is a figure which shows an example of the reference image group registered in the reference image database with which the said monitoring apparatus is equipped, (a) shows the reference image including a plurality of reference images in which the use state of the furnace lining is different An example of a group, (b) shows an example of a reference image group including a plurality of reference images with different melt surface positions, (c) shows a plurality of reference images including a predetermined range of different inclinations of the furnace lining (d) shows an example of a reference image group including a plurality of reference images having different electron beam irradiation positions. FIG. 6 is a diagram for explaining the determination process of the position of the furnace lining. FIG. 7 is a diagram for explaining the determination process of the melt surface position. FIG. 8 is a diagram for explaining the determination processing of the irradiation position. FIG. 9 shows an example of a plurality of images captured in the position monitoring of the furnace lining. FIG. 10 shows an example of a plurality of images captured in the melt surface position monitoring. FIG. 11 shows an example of a plurality of images captured in irradiation position monitoring. FIG. 12 is a flowchart showing an example of the processing flow of the monitoring system. FIG. 13 is a flowchart showing an example of a processing flow of the monitoring device.

1‧‧‧監視裝置 1‧‧‧Monitoring device

2‧‧‧蒸鍍裝置 2‧‧‧Evaporation device

3‧‧‧材料供給裝置 3‧‧‧Material supply device

10‧‧‧控制部 10‧‧‧Control Department

11‧‧‧拍攝部 11‧‧‧Photography Department

13‧‧‧通知部 13‧‧‧Notification Department

14‧‧‧記錄部 14‧‧‧Records Department

15‧‧‧拍攝控制部 15‧‧‧Camera Control Department

16‧‧‧圖像選擇部 16‧‧‧Image Selection Section

17‧‧‧狀態判定部 17‧‧‧Status Judgment Section

141‧‧‧基準圖像資料庫 141‧‧‧Benchmark Image Database

171‧‧‧爐膛內襯位置監視部 171‧‧‧ Furnace lining position monitoring department

172‧‧‧熔體表面位置監視部 172‧‧‧Melt surface position monitoring section

173‧‧‧照射位置監視部 173‧‧‧Irradiation position monitoring department

Claims (8)

一種監視裝置,進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視裝置的特徵在於,包括:拍攝部,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇部,從所述拍攝部拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定部,通過分析所述圖像選擇部選擇的所述分析對象圖像,來判定所述蒸鍍裝置的狀態,且設有包含所述容器的狀態不同的多個所述基準圖像的基準圖像群,所述圖像選擇部根據(1)所述拍攝部拍攝的圖像所含的所述容器和/或所述蒸鍍材料的輝度或清晰度、或者(2)所述蒸鍍裝置中電子束照射時的電流值,從所述基準圖像群選擇基準圖像,使用選擇的所述基準圖像,從所述多個圖像選擇所述分析對象圖像。 A monitoring device for monitoring a vapor deposition device that forms a film on a substrate by vapor deposition of a vapor deposition material on a substrate, the monitoring device is characterized by comprising: an imaging unit that images the substrate. A container for holding the vapor deposition material included in the vapor deposition device is used as a photographing object, and photographing is performed a plurality of times; an image selection unit selects a reference image from among the plurality of images photographed by the photographing unit The most relevant image is an image to be analyzed, the reference image is an image showing the container; and a state determination unit determines by analyzing the image to be analyzed selected by the image selection unit The state of the vapor deposition apparatus, and a reference image group including a plurality of the reference images having different states of the container is provided, and the image selection unit is based on the image captured by the imaging unit (1) The brightness or clarity of the container and/or the vapor deposition material contained therein, or (2) the current value at the time of electron beam irradiation in the vapor deposition apparatus, a reference image is selected from the reference image group, Using the selected reference image, the analysis target image is selected from the plurality of images. 如申請專利範圍第1項所述的監視裝置,其中所述拍攝部每當拍攝所述圖像時,改變拍攝靈敏度和快門速度中的至少任意一方。 The monitoring device according to claim 1, wherein the imaging unit changes at least one of imaging sensitivity and shutter speed every time the image is captured. 如申請專利範圍第2項所述的監視裝置,其中在所述多個圖像的拍攝開始至結束為止的期間中,設有不拍攝所述圖像的預定期間。 The monitoring device according to claim 2, wherein a predetermined period during which the images are not captured is provided in the period from the start to the end of the capture of the plurality of images. 如申請專利範圍第2項或第3項所述的監視裝置,其中所述狀態判定部將所述分析對象圖像中顯現的(A)所述容器的位置、(B)供給到所述容器的蒸鍍材料的熔體表面位置、以及(C)從束射出源射出的電子束在所述容器中的照射位置中的任意一個位置作為分析對象進行分析,來判定所述蒸鍍裝置的狀態,所述拍攝部以對應於所述分析對象設定的所述拍攝靈敏度和所述快門速度進行拍攝。 The monitoring device according to claim 2 or claim 3, wherein the state determination unit supplies (A) the position of the container and (B) the container appearing in the analysis target image to the container The position of the melt surface of the vapor deposition material and (C) the irradiation position of the electron beam emitted from the beam emission source in the container is analyzed as an analysis object to determine the state of the vapor deposition apparatus. , and the photographing unit performs photographing at the photographing sensitivity and the shutter speed set corresponding to the analysis target. 如申請專利範圍第1項所述的監視裝置,其中所述基準圖像群是如下的基準圖像群中的至少一個基準圖像群:(a)包含所述容器的使用狀態彼此不同的多個基準圖像的基準圖像群;(b)包含供給到所述容器的所述蒸鍍材料的熔體表面位置彼此不同的多個基準圖像的基準圖像群;(c)包含所述容器相對於預定基準面的傾斜度彼此不同的多個基準圖像的基準圖像群,其中,所述傾斜度處在預定範圍內;以及(d)包含從束射出源射出的電子束在所述容器中的照射位置彼此不同的多個基準圖像的基準圖像群。 The monitoring device according to claim 1, wherein the reference image group is at least one reference image group among reference image groups that (a) include a plurality of containers whose usage states are different from each other. (b) a reference image group including a plurality of reference images whose melt surface positions of the vapor deposition material supplied to the container are different from each other; (c) a reference image group including the a reference image group of a plurality of reference images whose inclinations of the container are different from each other with respect to a predetermined reference plane, wherein the inclinations are within a predetermined range; A reference image group of a plurality of reference images whose irradiation positions in the container are different from each other. 如申請專利範圍第5項所述的監視裝置,其中所述狀態判定部將所述分析對象圖像中顯現的(A)所述容器的位置、(B)供給到所述容器的蒸鍍材料的熔體表面位置、以及(C)從束射出源射出的電子束在所述容器中的照射位置中的任意一個位置作為分析對象進行分析,來判定所述蒸鍍裝置的狀態,所述圖像選擇部對應於所述分析對象,從所述(a)至(d)的基準圖像群中的至少一個基準圖像群,選擇出在選擇所述分析對象圖像時所使用的基準圖像。 The monitoring device according to claim 5, wherein the state determination unit provides (A) the position of the container and (B) the vapor deposition material to be supplied to the container, which are displayed in the analysis target image. The position of the melt surface and (C) any position of the irradiation position of the electron beam emitted from the beam emission source in the container is analyzed as an analysis object to determine the state of the vapor deposition apparatus. The image selection unit corresponds to the analysis target, and selects a reference image used when selecting the analysis target image from at least one reference image group among the reference image groups (a) to (d). picture. 一種監視方法,進行蒸鍍裝置的監視,所述蒸鍍裝置通過將蒸鍍材料蒸鍍於基板而對所述基板進行成膜,所述監視方法的特徵在於,包括:拍攝步驟,將所述蒸鍍裝置所具備的用於保持所述蒸鍍材料的容器作為拍攝對象,進行多次拍攝;圖像選擇步驟,從所述拍攝步驟拍攝的多個圖像之中,選擇出與基準圖像最相關的圖像作為分析對象圖像,所述基準圖像為顯現出所述容器的圖像;以及狀態判定步驟,通過分析所述圖像選擇步驟選擇的分析對象圖像,來判定所述蒸鍍裝置的狀態,所述圖像選擇步驟中,根據(1)所述拍攝步驟中拍攝的圖像所含的所述容器和/或所述蒸鍍材料的輝度或清晰度、或者(2)所述蒸鍍裝置中電子束照射時的電流值,從包含所述容器的狀態不同的多個所述基準圖 像的基準圖像群選擇基準圖像,使用選擇的所述基準圖像,從所述多個圖像選擇所述分析對象圖像。 A monitoring method for monitoring a vapor deposition device that forms a film on a substrate by vapor deposition of a vapor deposition material, the monitoring method is characterized by comprising: a photographing step, wherein the The container for holding the vapor deposition material provided in the vapor deposition device is used as a photographing object, and photographing is performed for a plurality of times; the image selection step is to select a reference image from among the plurality of images photographed in the photographing step. the most relevant image as an analysis target image, the reference image being an image showing the container; and a state determination step of determining the analysis target image selected by the image selection step The state of the vapor deposition apparatus, in the image selection step, based on (1) the brightness or clarity of the container and/or the vapor deposition material included in the image captured in the capturing step, or (2) ) Current value at the time of electron beam irradiation in the vapor deposition apparatus, from a plurality of the reference graphs including the state of the container A reference image is selected from a reference image group of images, and the analysis target image is selected from the plurality of images using the selected reference image. 一種電腦可讀取記錄媒體,記錄有電腦程式,其特徵在於,所述電腦程式被處理器執行時實現如申請專利範圍第7項所述的監視方法的各步驟。A computer-readable recording medium recording a computer program, characterized in that, when the computer program is executed by a processor, each step of the monitoring method described in item 7 of the scope of the patent application is implemented.
TW107118171A 2017-05-31 2018-05-28 Monitoring device, monitoring method and computer-readable recording medium TWI759490B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017108375A JP6858079B2 (en) 2017-05-31 2017-05-31 Monitoring device and monitoring method
JP2017-108375 2017-05-31

Publications (2)

Publication Number Publication Date
TW201903182A TW201903182A (en) 2019-01-16
TWI759490B true TWI759490B (en) 2022-04-01

Family

ID=64541986

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107118171A TWI759490B (en) 2017-05-31 2018-05-28 Monitoring device, monitoring method and computer-readable recording medium

Country Status (4)

Country Link
JP (1) JP6858079B2 (en)
KR (1) KR102496604B1 (en)
CN (1) CN108977790B (en)
TW (1) TWI759490B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7248201B2 (en) * 2020-11-30 2023-03-29 コニカミノルタ株式会社 Analyzers, inspection systems, and learning devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004197121A (en) * 2002-12-16 2004-07-15 Sumitomo Metal Mining Co Ltd Beam position monitoring device in electron beam deposition system
JP2012137474A (en) * 2010-12-07 2012-07-19 Honda Motor Co Ltd Method and device for recognizing work position

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255469B2 (en) * 1992-11-30 2002-02-12 三菱電機株式会社 Laser thin film forming equipment
JP2005126759A (en) 2003-10-23 2005-05-19 Nec Kansai Ltd Vacuum deposition apparatus
US7439208B2 (en) * 2003-12-01 2008-10-21 Superconductor Technologies, Inc. Growth of in-situ thin films by reactive evaporation
JP2006352715A (en) * 2005-06-17 2006-12-28 Casio Comput Co Ltd Digital camera and exposure control method thereof
JP2010153769A (en) * 2008-11-19 2010-07-08 Tokyo Electron Ltd Substrate position sensing device, substrate position sensing method, film forming device, film forming method, program, and computer readable storage medium
TW201337013A (en) * 2012-03-12 2013-09-16 Hitachi High Tech Corp Evaporation source device, vacuum vapor deposition device and manufacturing method for organic EL display device
JP2013211137A (en) * 2012-03-30 2013-10-10 Samsung Display Co Ltd Vacuum evaporation method and apparatus of the same
CN202692075U (en) * 2012-08-08 2013-01-23 日立造船株式会社 Combustion area detection device of combustion furnace
JP6139423B2 (en) * 2014-01-29 2017-05-31 シャープ株式会社 Vapor deposition apparatus, vapor deposition method, and organic electroluminescence element manufacturing method
WO2015152217A1 (en) * 2014-04-01 2015-10-08 株式会社ニコン Substrate-processing apparatus, device manufacturing method, and method for adjusting substrate-processing apparatus
JP2016222974A (en) * 2015-05-29 2016-12-28 パナソニックIpマネジメント株式会社 Vacuum deposition apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004197121A (en) * 2002-12-16 2004-07-15 Sumitomo Metal Mining Co Ltd Beam position monitoring device in electron beam deposition system
JP2012137474A (en) * 2010-12-07 2012-07-19 Honda Motor Co Ltd Method and device for recognizing work position

Also Published As

Publication number Publication date
KR102496604B1 (en) 2023-02-03
JP6858079B2 (en) 2021-04-14
CN108977790A (en) 2018-12-11
JP2018204063A (en) 2018-12-27
CN108977790B (en) 2022-04-12
KR20180131439A (en) 2018-12-10
TW201903182A (en) 2019-01-16

Similar Documents

Publication Publication Date Title
JP4594156B2 (en) Sample preparation method and sample preparation apparatus
JP6490029B2 (en) Microscope and method for generating one combined image from a plurality of individual images of an object
US8659655B2 (en) Method of selecting an optimal viewing angle position for a camera
TWI759490B (en) Monitoring device, monitoring method and computer-readable recording medium
JP2011128536A (en) Imaging apparatus and control method therefor
WO2019228071A1 (en) Method, device and apparatus for adjusting exposure time of camera
JP2005073249A (en) Photographing system that performs object specification through remote controller and digital framing
TW201014346A (en) An image brightness compensation method and digital photographic device with an image brightness compensation function
US20140078326A1 (en) Focus control device, method for controlling focus and image pickup apparatus
KR101711642B1 (en) Baseball game system
JP6705411B2 (en) Information processing apparatus, information processing method, and program
JP6719340B2 (en) Monitoring device and monitoring method
CN103379269B (en) Camera system, image pickup method and the electronic equipment using the camera system
CN101191891A (en) Electronic camara
JP2021081621A (en) Lighting device, method for controlling the same, and imaging system
EP3709628B1 (en) Control of an illuminator
JPH11354419A (en) Coating device
US20160037041A1 (en) Adaptive illumination apparatus and method
JP2004197121A (en) Beam position monitoring device in electron beam deposition system
JP5123828B2 (en) Imaging device
JP7023614B2 (en) Image pickup device, its control method, and program
JP2007171518A (en) Imaging apparatus, method for controlling the same and control program
JP2016208198A (en) Imaging System
JP2022086220A (en) Imaging apparatus, imaging method, and imaging control program
JP2018084614A (en) Image projection system and image projection method