TWI755453B - 鑑定一光微影光罩合格性之方法及系統 - Google Patents

鑑定一光微影光罩合格性之方法及系統 Download PDF

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Publication number
TWI755453B
TWI755453B TW106141158A TW106141158A TWI755453B TW I755453 B TWI755453 B TW I755453B TW 106141158 A TW106141158 A TW 106141158A TW 106141158 A TW106141158 A TW 106141158A TW I755453 B TWI755453 B TW I755453B
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TW
Taiwan
Prior art keywords
reticle
wafer
images
different
test
Prior art date
Application number
TW106141158A
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English (en)
Chinese (zh)
Other versions
TW201901291A (zh
Inventor
阿布都拉罕 賽斯金納
穆罕默德 梅迪 丹尼斯帕納
Original Assignee
美商克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US15/803,628 external-priority patent/US10395361B2/en
Application filed by 美商克萊譚克公司 filed Critical 美商克萊譚克公司
Publication of TW201901291A publication Critical patent/TW201901291A/zh
Application granted granted Critical
Publication of TWI755453B publication Critical patent/TWI755453B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
    • G03F7/2063—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam for the production of exposure masks or reticles
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Library & Information Science (AREA)
  • Toxicology (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Chemical & Material Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Computer Vision & Pattern Recognition (AREA)
  • Quality & Reliability (AREA)
  • Theoretical Computer Science (AREA)
  • Signal Processing (AREA)
TW106141158A 2017-05-18 2017-11-27 鑑定一光微影光罩合格性之方法及系統 TWI755453B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762508369P 2017-05-18 2017-05-18
US62/508,369 2017-05-18
US15/803,628 2017-11-03
US15/803,628 US10395361B2 (en) 2015-08-10 2017-11-03 Apparatus and methods for inspecting reticles

Publications (2)

Publication Number Publication Date
TW201901291A TW201901291A (zh) 2019-01-01
TWI755453B true TWI755453B (zh) 2022-02-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW106141158A TWI755453B (zh) 2017-05-18 2017-11-27 鑑定一光微影光罩合格性之方法及系統

Country Status (6)

Country Link
JP (2) JP2020520481A (ja)
KR (1) KR20190143450A (ja)
DE (1) DE112017007551T5 (ja)
IL (1) IL270618B2 (ja)
TW (1) TWI755453B (ja)
WO (1) WO2018212787A1 (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017027366A1 (en) 2015-08-10 2017-02-16 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
WO2020043525A1 (en) * 2018-08-28 2020-03-05 Asml Netherlands B.V. Systems and methods of optimal metrology guidance
DE102019213904A1 (de) * 2019-09-12 2021-03-18 Carl Zeiss Smt Gmbh Verfahren zur Erfassung einer Objektstruktur sowie Vorrichtung zur Durchführung des Verfahrens
TWI736317B (zh) * 2020-06-12 2021-08-11 華邦電子股份有限公司 用於黃光製程的辨識方法與半導體元件
US11443095B2 (en) * 2020-07-10 2022-09-13 Taiwan Semiconductor Manufacturing Co., Ltd. Hotspot avoidance method for manufacturing integrated circuits
US20220307990A1 (en) * 2021-03-24 2022-09-29 Kla Corporation Imaging reflectometry for inline screening
EP4082982A1 (en) 2021-04-27 2022-11-02 HeidelbergCement AG Composite cement with improved reactivity and method for manufacturing it
IL310450A (en) * 2021-08-11 2024-03-01 Asml Netherlands Bv Detection of defects in the mask
WO2024123370A1 (en) * 2022-12-08 2024-06-13 Leia Inc. Mehtod of large-format imprint lithography and imprint lithography mold

Citations (3)

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TW201310165A (zh) * 2011-07-19 2013-03-01 Zeiss Carl Sms Gmbh 用於分析及移除ｅｕｖ光罩的缺陷的裝置及方法
US20160012579A1 (en) * 2014-05-06 2016-01-14 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
TW201602717A (zh) * 2014-05-06 2016-01-16 克萊譚克公司 使用近場復原之光罩檢測

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US6122056A (en) * 1998-04-07 2000-09-19 International Business Machines Corporation Direct phase shift measurement between interference patterns using aerial image measurement tool
KR101056142B1 (ko) * 2004-01-29 2011-08-10 케이엘에이-텐코 코포레이션 레티클 설계 데이터의 결함을 검출하기 위한 컴퓨터로구현되는 방법
JP2007071678A (ja) * 2005-09-07 2007-03-22 Hitachi High-Technologies Corp 検査システム
US8213704B2 (en) * 2007-05-09 2012-07-03 Kla-Tencor Corp. Methods and systems for detecting defects in a reticle design pattern
WO2009152046A1 (en) * 2008-06-11 2009-12-17 Kla-Tencor Corporation Systems and methods for detecting design and process defects on a wafer, reviewing defects on a wafer, selecting one or more features within a design for use as process monitoring features, or some combination thereof
EP2443651B1 (en) * 2009-06-19 2015-08-12 KLA-Tencor Corporation Inspection systems and methods for detecting defects on extreme ultraviolet mask blanks
US9612541B2 (en) * 2013-08-20 2017-04-04 Kla-Tencor Corporation Qualifying patterns for microlithography
US9478019B2 (en) * 2014-05-06 2016-10-25 Kla-Tencor Corp. Reticle inspection using near-field recovery
WO2017027366A1 (en) * 2015-08-10 2017-02-16 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201310165A (zh) * 2011-07-19 2013-03-01 Zeiss Carl Sms Gmbh 用於分析及移除ｅｕｖ光罩的缺陷的裝置及方法
US20160012579A1 (en) * 2014-05-06 2016-01-14 Kla-Tencor Corporation Apparatus and methods for predicting wafer-level defect printability
TW201602717A (zh) * 2014-05-06 2016-01-16 克萊譚克公司 使用近場復原之光罩檢測

Also Published As

Publication number Publication date
DE112017007551T5 (de) 2020-02-13
IL270618B2 (en) 2023-11-01
KR20230070057A (ko) 2023-05-19
WO2018212787A1 (en) 2018-11-22
TW201901291A (zh) 2019-01-01
JP2022164702A (ja) 2022-10-27
IL270618B1 (en) 2023-07-01
IL270618A (ja) 2019-12-31
JP2020520481A (ja) 2020-07-09
KR20190143450A (ko) 2019-12-30
JP7440580B2 (ja) 2024-02-28

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