TWI754663B - 具有相移及增益補償電路之衰減器 - Google Patents

具有相移及增益補償電路之衰減器 Download PDF

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Publication number
TWI754663B
TWI754663B TW106129620A TW106129620A TWI754663B TW I754663 B TWI754663 B TW I754663B TW 106129620 A TW106129620 A TW 106129620A TW 106129620 A TW106129620 A TW 106129620A TW I754663 B TWI754663 B TW I754663B
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Taiwan
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global
local
attenuation
circuit
switching transistor
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TW106129620A
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English (en)
Chinese (zh)
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TW201813293A (zh
Inventor
顏燕
俊勇 李
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美商天工方案公司
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/106—Gain control characterised by the type of controlled element being attenuating element

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
TW106129620A 2016-08-30 2017-08-30 具有相移及增益補償電路之衰減器 TWI754663B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662381367P 2016-08-30 2016-08-30
US62/381,367 2016-08-30

Publications (2)

Publication Number Publication Date
TW201813293A TW201813293A (zh) 2018-04-01
TWI754663B true TWI754663B (zh) 2022-02-11

Family

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Family Applications (2)

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TW111100546A TW202234819A (zh) 2016-08-30 2017-08-30 具有相移及增益補償電路之衰減器
TW106129620A TWI754663B (zh) 2016-08-30 2017-08-30 具有相移及增益補償電路之衰減器

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW111100546A TW202234819A (zh) 2016-08-30 2017-08-30 具有相移及增益補償電路之衰減器

Country Status (9)

Country Link
US (2) US12237820B2 (enExample)
JP (2) JP7069169B2 (enExample)
KR (1) KR102560009B1 (enExample)
CN (1) CN109906554B (enExample)
DE (1) DE112017004371T5 (enExample)
GB (1) GB2568449B (enExample)
SG (1) SG11201901791TA (enExample)
TW (2) TW202234819A (enExample)
WO (1) WO2018044798A1 (enExample)

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US12237820B2 (en) 2016-08-30 2025-02-25 Skyworks Solutions, Inc. Attenuators having phase shift and gain compensation circuits
CN111989818A (zh) * 2018-03-28 2020-11-24 株式会社村田制作所 定向耦合器
JP2020195033A (ja) * 2019-05-27 2020-12-03 株式会社東芝 高周波増幅回路及び半導体装置
CN110995164B (zh) * 2019-11-26 2023-04-14 杭州电子科技大学 集成了本振泄露补偿网络的毫米波双平衡混频器
CN113131963A (zh) * 2019-12-31 2021-07-16 深圳市大富科技股份有限公司 一种补偿电路以及一种通信电路
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
EP4344060A1 (en) * 2022-09-21 2024-03-27 Nxp B.V. Digital, inductive step attenuator with capacitive phase-gain compensation and incorporation into quarter-wave tx / rx switch
EP4344061A1 (en) 2022-09-21 2024-03-27 Nxp B.V. Wilkinson splitter with added variable attenuation and switching capability
CN119945379B (zh) * 2025-01-08 2025-11-04 中山大学 一种基于晶体管寄生电容补偿相位的mos衰减器及控制方法

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US20150318889A1 (en) * 2014-04-30 2015-11-05 Skyworks Solutions, Inc. Bypass path loss reduction
US20150326205A1 (en) * 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with low phase shift
US20160118959A1 (en) * 2014-10-22 2016-04-28 Analog Devices Global Apparatus and methods for reducing glitches in digital step attenuators
WO2016073204A1 (en) * 2014-11-07 2016-05-12 Qualcomm Incorporated Variable high-voltage radio-frequency attenuator
US20160134259A1 (en) * 2014-11-11 2016-05-12 Peregrine Semiconductor Corporation Digital Step Attenuator with Reduced Relative Phase Error

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JP4214710B2 (ja) 2002-04-15 2009-01-28 三菱電機株式会社 可変減衰器
EP1639717B1 (de) 2003-06-27 2016-08-10 Rohde & Schwarz GmbH & Co. KG Eichleitungs-anordnung
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US8779870B2 (en) * 2011-10-05 2014-07-15 International Business Machines Corporation Low phase variation CMOS digital attenuator
US20150318889A1 (en) * 2014-04-30 2015-11-05 Skyworks Solutions, Inc. Bypass path loss reduction
US20150326205A1 (en) * 2014-05-09 2015-11-12 Skyworks Solutions, Inc. Apparatus and methods for digital step attenuators with low phase shift
US20160118959A1 (en) * 2014-10-22 2016-04-28 Analog Devices Global Apparatus and methods for reducing glitches in digital step attenuators
WO2016073204A1 (en) * 2014-11-07 2016-05-12 Qualcomm Incorporated Variable high-voltage radio-frequency attenuator
US20160134259A1 (en) * 2014-11-11 2016-05-12 Peregrine Semiconductor Corporation Digital Step Attenuator with Reduced Relative Phase Error

Also Published As

Publication number Publication date
CN109906554B (zh) 2024-02-13
JP2022110018A (ja) 2022-07-28
CN109906554A (zh) 2019-06-18
GB201904326D0 (en) 2019-05-15
TW201813293A (zh) 2018-04-01
US20180062621A1 (en) 2018-03-01
JP7364738B2 (ja) 2023-10-18
US12237820B2 (en) 2025-02-25
GB2568449B (en) 2022-03-30
WO2018044798A1 (en) 2018-03-08
KR102560009B1 (ko) 2023-07-26
DE112017004371T5 (de) 2019-05-16
JP2019533400A (ja) 2019-11-14
US20250167767A1 (en) 2025-05-22
KR20190052011A (ko) 2019-05-15
GB2568449A (en) 2019-05-15
SG11201901791TA (en) 2019-03-28
JP7069169B2 (ja) 2022-05-17
TW202234819A (zh) 2022-09-01

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