CN109906554B - 具有相移和增益补偿电路的衰减器 - Google Patents

具有相移和增益补偿电路的衰减器 Download PDF

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Publication number
CN109906554B
CN109906554B CN201780064934.3A CN201780064934A CN109906554B CN 109906554 B CN109906554 B CN 109906554B CN 201780064934 A CN201780064934 A CN 201780064934A CN 109906554 B CN109906554 B CN 109906554B
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China
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global
attenuation
local
bypass
circuit
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CN201780064934.3A
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Chinese (zh)
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CN109906554A (zh
Inventor
颜燕
J·李
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Skyworks Solutions Inc
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Skyworks Solutions Inc
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H03G3/3042—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers in modulators, frequency-changers, transmitters or power amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/24—Frequency-independent attenuators
    • H03H11/245—Frequency-independent attenuators using field-effect transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/22—Attenuating devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0277—Selecting one or more amplifiers from a plurality of amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0017—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements
    • H03G1/0029—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal the device being at least one of the amplifying solid-state elements using field-effect transistors [FET]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G1/00—Details of arrangements for controlling amplification
    • H03G1/0005—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal
    • H03G1/0088—Circuits characterised by the type of controlling devices operated by a controlling current or voltage signal using discontinuously variable devices, e.g. switch-operated
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3052—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver
    • H03G3/3063—Automatic control in amplifiers having semiconductor devices in bandpass amplifiers (H.F. or I.F.) or in frequency-changers used in a (super)heterodyne receiver using at least one transistor as controlling device, the transistor being used as a variable impedance device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/24—Frequency- independent attenuators
    • H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7215—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the input of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
    • H03F2203/72—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H03F2203/7221—Indexing scheme relating to gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal the gated amplifier being switched on or off by a switch at the output of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G2201/00—Indexing scheme relating to subclass H03G
    • H03G2201/10—Gain control characterised by the type of controlled element
    • H03G2201/106—Gain control characterised by the type of controlled element being attenuating element
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Networks Using Active Elements (AREA)
  • Attenuators (AREA)
  • Transceivers (AREA)
  • Transmitters (AREA)
  • Input Circuits Of Receivers And Coupling Of Receivers And Audio Equipment (AREA)
CN201780064934.3A 2016-08-30 2017-08-28 具有相移和增益补偿电路的衰减器 Active CN109906554B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201662381367P 2016-08-30 2016-08-30
US62/381,367 2016-08-30
PCT/US2017/048916 WO2018044798A1 (en) 2016-08-30 2017-08-28 Attenuators having phase shift and gain compensation circuits

Publications (2)

Publication Number Publication Date
CN109906554A CN109906554A (zh) 2019-06-18
CN109906554B true CN109906554B (zh) 2024-02-13

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CN201780064934.3A Active CN109906554B (zh) 2016-08-30 2017-08-28 具有相移和增益补偿电路的衰减器

Country Status (9)

Country Link
US (2) US12237820B2 (enExample)
JP (2) JP7069169B2 (enExample)
KR (1) KR102560009B1 (enExample)
CN (1) CN109906554B (enExample)
DE (1) DE112017004371T5 (enExample)
GB (1) GB2568449B (enExample)
SG (1) SG11201901791TA (enExample)
TW (2) TW202234819A (enExample)
WO (1) WO2018044798A1 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12237820B2 (en) 2016-08-30 2025-02-25 Skyworks Solutions, Inc. Attenuators having phase shift and gain compensation circuits
CN111989818A (zh) * 2018-03-28 2020-11-24 株式会社村田制作所 定向耦合器
JP2020195033A (ja) * 2019-05-27 2020-12-03 株式会社東芝 高周波増幅回路及び半導体装置
CN110995164B (zh) * 2019-11-26 2023-04-14 杭州电子科技大学 集成了本振泄露补偿网络的毫米波双平衡混频器
CN113131963A (zh) * 2019-12-31 2021-07-16 深圳市大富科技股份有限公司 一种补偿电路以及一种通信电路
US11811438B2 (en) 2020-08-21 2023-11-07 Skyworks Solutions, Inc. Systems and methods for magnitude and phase trimming
EP4344060A1 (en) * 2022-09-21 2024-03-27 Nxp B.V. Digital, inductive step attenuator with capacitive phase-gain compensation and incorporation into quarter-wave tx / rx switch
EP4344061A1 (en) 2022-09-21 2024-03-27 Nxp B.V. Wilkinson splitter with added variable attenuation and switching capability
CN119945379B (zh) * 2025-01-08 2025-11-04 中山大学 一种基于晶体管寄生电容补偿相位的mos衰减器及控制方法

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WO2009145957A1 (en) * 2008-03-31 2009-12-03 Javelin Semiconductor, Inc. Compensating for non-linear capacitance effects in a power amplifier
US8779870B2 (en) * 2011-10-05 2014-07-15 International Business Machines Corporation Low phase variation CMOS digital attenuator
US9219877B2 (en) * 2013-03-07 2015-12-22 Holland Electronics, Llc Impedance compensation circuit
WO2016073204A1 (en) * 2014-11-07 2016-05-12 Qualcomm Incorporated Variable high-voltage radio-frequency attenuator

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US5666089A (en) 1996-04-12 1997-09-09 Hewlett-Packard Company Monolithic step attenuator having internal frequency compensation
JP4214710B2 (ja) 2002-04-15 2009-01-28 三菱電機株式会社 可変減衰器
EP1639717B1 (de) 2003-06-27 2016-08-10 Rohde & Schwarz GmbH & Co. KG Eichleitungs-anordnung
JP2005086310A (ja) 2003-09-05 2005-03-31 Stack Denshi Kk 切換減衰器
US8059705B2 (en) 2007-02-16 2011-11-15 Applied Micro Circuits Corporation Channel equalization using frequency and phase compensation
JP5692813B2 (ja) 2008-11-18 2015-04-01 フリースケール セミコンダクター インコーポレイテッド 位相補償のための集積回路、通信ユニット、および方法
JP2010252241A (ja) 2009-04-20 2010-11-04 Alps Electric Co Ltd 可変アッテネータ回路
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WO2009145957A1 (en) * 2008-03-31 2009-12-03 Javelin Semiconductor, Inc. Compensating for non-linear capacitance effects in a power amplifier
US8779870B2 (en) * 2011-10-05 2014-07-15 International Business Machines Corporation Low phase variation CMOS digital attenuator
US9219877B2 (en) * 2013-03-07 2015-12-22 Holland Electronics, Llc Impedance compensation circuit
WO2016073204A1 (en) * 2014-11-07 2016-05-12 Qualcomm Incorporated Variable high-voltage radio-frequency attenuator

Also Published As

Publication number Publication date
JP2022110018A (ja) 2022-07-28
CN109906554A (zh) 2019-06-18
GB201904326D0 (en) 2019-05-15
TWI754663B (zh) 2022-02-11
TW201813293A (zh) 2018-04-01
US20180062621A1 (en) 2018-03-01
JP7364738B2 (ja) 2023-10-18
US12237820B2 (en) 2025-02-25
GB2568449B (en) 2022-03-30
WO2018044798A1 (en) 2018-03-08
KR102560009B1 (ko) 2023-07-26
DE112017004371T5 (de) 2019-05-16
JP2019533400A (ja) 2019-11-14
US20250167767A1 (en) 2025-05-22
KR20190052011A (ko) 2019-05-15
GB2568449A (en) 2019-05-15
SG11201901791TA (en) 2019-03-28
JP7069169B2 (ja) 2022-05-17
TW202234819A (zh) 2022-09-01

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