TWI753472B - 減少光降解之ｌｅｄ分散式布拉格反射器結構 - Google Patents

減少光降解之ｌｅｄ分散式布拉格反射器結構 Download PDF

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TWI753472B
TWI753472B TW109121968A TW109121968A TWI753472B TW I753472 B TWI753472 B TW I753472B TW 109121968 A TW109121968 A TW 109121968A TW 109121968 A TW109121968 A TW 109121968A TW I753472 B TWI753472 B TW I753472B
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refractive index
index layer
low refractive
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light
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健太郎 清水
久志 增井
泰德 汪根史迪恩
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美商亮銳公司
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Abstract

本發明揭示一種一基板上之分散式布拉格反射器(DBR)結構，其包含：一高折射率層，其包括二氧化鈦(TiO2 )；及一低折射率層，其具有一高碳區域及接觸該高折射率層之至少一低碳區域。堆疊該高折射率層及該低折射率層之多個層。通常，將該高折射率層及該低折射率層之該多個層堆疊至小於10微米之一厚度。該高折射率層及該低折射率層之該等各自層之各者具有小於0.2微米之一厚度。

Description

減少光降解之LED分散式布拉格反射器結構
本發明大體上係關於分散式布拉格反射器(DBR)之結構及製造，特定言之，本發明係關於LED封裝中之DBR。一組特定低碳前驅物用於提高反射器品質。
半導體發光二極體及雷射二極體(本文中統稱為「LED」)係當前可用之最高效光源之一。一LED之發射光譜通常在由裝置之結構及構成其之半導體材料之組成判定之一波長處展現一單一窄峰值。可藉由適當選擇裝置結構及材料系統來將LED設計為以紫外線、可見光或紅外線波長操作。LED可與吸收由LED發射之光且回應性發射一更長波長光之一或多種波長轉換材料(本文中一般指稱「磷光體」)組合。此等裝置可指稱經磷光體轉換之LED (「pcLED」)。
通常將LED製造成具有能夠使光重定向以提高有用光提取效率之光反射側壁。例如，一側壁可塗覆有粘合劑及反射粒子之各種組合。一常用反射器係基於負載有TiO2 奈米粒子之聚矽氧粘合劑。不幸的是，歸因於粒徑及光相互作用，此等反射塗層仍會導致吸收於塗層內或重定向至導致吸收之一方向中之過量雜散光。
側壁及基板亦可塗覆有反射金屬。儘管可比TiO2 奈米粒子提高反射率，但製造難度增加且歸因於將相對大量金屬引入LED封裝中之潛在損壞限制金屬反射器之廣泛使用。
一較佳反射器由一非金屬分散式布拉格反射器(DBR)提供。原子層沈積可用於生成精確厚度及交替低折射率材料及高折射率材料之多個層。一常見多層堆疊係基於低折射率氧化鋁(Al2 O3 )及高折射率氧化鈦(TiO2 )。此等層與習知LED處理溫度及典型180°C ALD處理溫度兩者相容。作為一額外優點，可使用包含用於Al2 O3 之三甲基鋁及用於TiO2 層形成之TiCL4 /H2 O之各種有機金屬或鹵化物前驅物。
不幸的是，由此等ALD程序生成之TiO2 之非晶層係光催化的。若存在由一LED產生之藍光及熱，則TiO2 層可與來自有機金屬前驅物之碳污染反應以生成石墨。隨著時間流逝，此導致LED裝置之顯著吸收損耗。為最小化此損壞，需要非碳前驅物及低碳膜製造技術來減少碳含量。
根據本發明之實施例，一種一基板上之DBR結構包含：一高折射率層，其包括氧化鈦(TiO2 )；及一低折射率層，其具有一高碳區域及接觸該高折射率層之至少一低碳區域。堆疊該高折射率層及該低折射率層之多個層。通常，將該高折射率層及該低折射率層之該多個層堆疊至小於10微米之一厚度。例如，一LED陣列中之兩個像素可由具有小於10微米之厚度之一DBR結構之一側壁分離，該側壁包括該高折射率層及該低折射率層之該多個層。該高折射率層及該低折射率層之該等各自層之各者可具有小於0.2微米之一厚度。
在一實施例中，該低折射率層包含可由諸如三甲基鋁之一有機金屬前驅物形成之Al2 O3 。碳係前驅物導致該低折射率層之該高碳區域。
該低折射率層之該接觸低碳區域可包含由諸如AlCl3 之鹵化物前驅物形成之Al2 O3 。使用不含碳之一前驅物導致該低折射率層之該低碳區域。
在一些實施例中，該基板係藍寶石，但其可代以為諸如GaN、玻璃或介電結構或碳化矽之一半導體材料。
在一實施例中，一種用於在一基板上形成一DBR結構之ALD程序包含以下步驟：沈積具有一高碳區域之一第一低折射率層；沈積具有接觸該高碳區域之一低碳區域之一第一低折射率層；沈積接觸該第一低折射率層之該低碳區域之包括氧化鈦(TiO2 )之一高折射率層；沈積具有接觸該高折射率層之一低碳區域之一第二低折射率層；及沈積具有一高碳區域之一第二低折射率層。
相關申請案之交叉參考 本申請案主張2019年6月27日申請之美國專利申請案16/455,051之優先權權利，該案之全部內容以引用之方式併入本文中。
應參考圖式來閱讀以下詳細描述，其中所有不同圖中之相同元件符號係指相同元件。未必按比例繪製之圖式描繪選擇性實施例且不意欲限制本發明之範疇。詳細描述依舉例而非限制方式繪示本發明之原理。
圖1展示一個別pcLED 100之一實例，pcLED 100包括安置於一基板104上之一半導體二極體結構102 (一LED)及安置於LED上之一磷光體層或結構106。半導體二極體結構102通常包括安置於n型層與p型層之間的一主動區域。跨二極體結構施加一適合正向偏壓導致自主動區域發射光。發射光之波長由主動區域之組成及結構判定。
例如，LED可為發射藍光、紫光或紫外光之III族氮化物LED。亦可使用由任何其他適合材料系統形成且發射任何其他適合波長光之LED。例如，其他適合材料系統可包含III族磷化物材料、III族砷化物材料及II-VI族材料。
可使用任何適合磷光體材料，其取決於來自pcLED之所要光學輸出。
圖2A及圖2B分別展示安置於一基板202上之pcLED 100之一陣列200之橫截面圖及俯視圖。此一陣列可包含依任何適合方式配置之任何適合數目個pcLED。在所繪示之實例中，陣列經描繪為單片形成於一共用基板上，但替代地，一pcLED陣列可由分離個別pcLED形成。基板202可視情況包括用於驅動LED之CMOS電路系統，且可由任何適合材料形成。
如圖3A及圖3B中所展示，一pcLED陣列200可安裝於包括一電力及控制模組302、一感測器模組304及一LED附接區域306之一電子板300上。電力及控制模組302可自外部源接收電力及控制信號及自感測器模組304接收信號，電力及控制模組302基於其等來控制LED之操作。感測器模組304可自任何適合感測器(例如自溫度或光感測器)接收信號。替代地，pcLED陣列200可安裝於與電力及控制模組及感測器模組分離之一板(未展示)上。
個別pcLED可視情況併入鄰近於磷光體層定位或安置於磷光體層上之一透鏡或其他光學元件或與該透鏡或其他光學元件組合配置。此一光學元件(圖中未展示)可指稱一「初級光學元件」。另外，如圖4A及圖4B中所展示，一pcLED陣列200 (例如，安裝於一電子板300上)可與諸如波導、透鏡或兩者之次級光學元件組合配置以用於一所欲應用中。在圖4A中，由pcLED 100發射之光由波導402收集且被導引至投影透鏡404。例如，投影透鏡404可為一菲涅耳(Fresnel)透鏡。此配置可適合用於(例如)汽車前照燈中。在圖4B中，由pcLED 100發射之光由投影透鏡404直接收集，無需使用介入波導。此配置可特別適合於pcLED可彼此足夠近地間隔時，且亦可用於汽車前照燈及攝影機閃光燈應用中。例如，一微LED顯示器應用可使用類似於圖4A及圖4B中所描繪之光學配置之光學配置。一般而言，光學元件之任何適合配置可與本文中所描述之pcLED組合使用，其取決於所要應用。
再次參考圖2A及圖2B，儘管此等圖展示九個pcLED之一3×3陣列，但此等陣列可包含(例如)數十個、數百個或數千個LED。個別LED (像素)可在陣列之平面中具有(例如)小於或等於1毫米(mm)、小於或等於500微米、小於或等於100微米或小於或等於50微米之寬度(例如邊長)。此一陣列中之LED可彼此隔開在陣列之平面中具有(例如)數百微米、小於或等於100微米、小於或等於50微米、小於或等於10微米或小於或等於5微米之一寬度之過道或切割道。儘管所繪示之實例展示以一對稱矩陣配置之矩形像素，但像素及陣列可具有任何適合形狀。
在陣列之平面中具有小於或等於約50微米之尺寸(例如邊長)之LED通常指稱微LED，且此等微LED之一陣列可指稱一微LED陣列。
一LED陣列或此一陣列之部分可形成為一分段單片結構，其中個別LED像素藉由溝槽及/或絕緣材料來彼此電隔離。圖2C展示此一分段單片陣列1100之一實例之一透視圖。此陣列中之像素由經填充以形成n接點1140之溝槽1130分離。單片結構生長或安置於一基板1114上。各像素包含一p接點1113、一p-GaN半導體層1112、一主動區域1111及一n-GaN半導體層1110。一波長轉換器材料1117可沈積於半導體層1110 (或其他適用層)上。鈍化層1115可形成於溝槽1130內以將n接點1140之至少一部分與半導體之一或多個層分離。n接點1140或溝槽內之其他材料可延伸至轉換器材料1117中，使得n接點1140或其他材料提供像素之間的完全或部分光學隔離1120。
一LED陣列中之個別LED (像素)可個別定址，可作為陣列中之像素之一群組或子集之部分定址，或可不定址。因此，發光像素陣列用於需要或受益於光分佈之細粒強度、空間及時間控制之任何應用。此等應用可包含(但不限於)自像素區塊或個別像素發射之光之精確特殊圖案化。取決於應用，發射光可光譜不同、隨時間適應及/或對環境敏感。發光像素陣列可以各種強度、空間或時間模式提供預程式化光分佈。發射光可至少部分基於所接收之感測器資料且可用於光學無線通信。相關聯之電子器件及光學器件在一像素、像素區塊或裝置級處可不同。
圖5展示具有安置於一基板530上之一半導體二極體結構500 (一LED)及安置於LED上之一磷光體層或結構510之一LED陣列之一實例。各半導體二極體結構500係與其他像素由一反射器或側壁520分離之一個別LED或像素。側壁520可將光自半導體二極體結構500向上反射至磷光體層510中且可向上反射由磷光體層510轉換之光，使得其可被發射出以由一觀看者看到。側壁520可為DBR側壁。反射器亦可安置於半導體二極體結構下方以防止反向散射光透過吸收或指向錯誤發射來損耗於裝置中。例如，基板530可為一反射器或塗覆有一反射器，其中反射器係一DBR。即，一像素或LED陣列內之DBR反射器或側壁不必受限於一半導體二極體結構500之左側及右側，而是可取決於所要輸出而安置於半導體二極體結構500上方或半導體二極體結構500下方。LED陣列中之DBR反射器可類似或相同於下文將描述之反射器。
發光像素陣列具有各種應用。發光像素陣列照明器可包含可經程式化以基於選擇性像素啟動及強度控制來投射不同照明圖案之燈具。此等照明器可使用非移動部件自一單一照明裝置傳遞多個可控光束圖案。通常，此藉由調整一1D或2D陣列中之個別LED之亮度來完成。光學器件(無論共用或個別)可視情況將光導引至特定目標區域中。
發光像素陣列可用於選擇性及適應性照射建築物或區域以改良視覺顯示或降低照明成本。另外，發光像素陣列可用於投射媒體立面以用於裝飾動畫或視訊效應。結合追蹤感測器及/或攝影機，行人周圍區域之選擇性照明可為可能的。光譜不同像素可用於調整照明之色溫及支援特定波長園藝照明。
街道照明係可顯著受益於發光像素陣列之使用之一重要應用。可使用一單一類型之發光陣列來模擬各種路燈類型以允許(例如)藉由適當啟動或撤銷啟動選定像素來切換於一I型線性路燈與一IV型半圓形路燈之間。另外，可藉由根據環境條件或使用時間調整光束強度或分佈來降低街道照明成本。例如，可在沒有行人時減小光強度及分佈區域。若發光像素陣列之像素係光譜不同的，則可根據各自白天、黃昏或夜晚條件來調整光之色溫。
發光陣列亦非常適合於支援需要直接或投射顯示之應用。例如，可使用發光陣列來顯示或投射警告、緊急情況或資訊標誌。例如，此允許投射變色或閃爍出口標誌。若一發光陣列由大量像素組成，則可呈現文字或數字資訊。亦可提供方向箭頭或類似指示器。
車輛頭燈係需要大量像素及一高資料再新率之一發光陣列應用。僅主動照射一道路之選定區段之汽車前照燈可用於減少與對向駕駛員之刺眼或目眩相關聯之問題。使用紅外攝影機作為感測器，發光像素陣列僅啟動照射道路所需之像素，同時撤銷啟動會使行人或對向車輛之駕駛員目眩之像素。另外，可選擇性照射道路外行人、動物或標誌以提高駕駛員環境意識。若發光像素陣列之像素係光譜不同的，則可根據各自白天、黃昏或夜晚條件來調整光之色溫。一些像素可用於光學無線車輛間通信。
通常，LED、LED陣列、pcLED及pcLED陣列之上述應用受益於LED中之光產生及自LED之光提取之提高效率。此等應用通常亦受益於較好地控制自主動區域輻射光之方向及自LED提取光之方向。此等益處通常歸因於裝置是否包括一波長轉換結構。
圖6繪示具有一附接高可靠性分散式布拉格反射器之一LED基板側壁600之一實施例。如所繪示，一藍寶石基板602具有由交替低折射率層及高折射率層形成之一附接DBR側壁。亦可使用包含半導體、碳化矽、玻璃或可受益於DBR反射鏡之附接之其他介電基板之其他基板。
圖6亦展示具有附接至藍寶石基板602之一高碳區域之一第一低折射率層610。存在高碳區域係因為在製造中使用有機金屬前驅物。在一實施例中，具有一高碳區域之低折射率層610係氧化鋁(Al2 O3 )，其使用三甲基鋁作為一前驅物來生成。替代地，可使用由一有機金屬前驅物形成之SiO2 。具有一低碳區域620之一第一低折射率層接觸低折射率層610之高碳區域。例如，低碳區域620具有比高碳區域低之一碳含量。在一實施例中，具有低碳區域620之低折射率層可由諸如AlCl3 之鹵化鋁前驅物形成。具有低碳層620之此低折射率層繼而接觸包括氧化鈦(TiO2 )之一高折射率層612。具有一低碳區域622之一第二低折射率層接觸高折射率層612，接著具有一高碳區域614 (例如另一氧化鋁層)之一第二低折射率層及具有低碳層624之另一低折射率層。交替低折射層及高折射層(例如Al2 O3 或SiO2 與TiO2 交替)之此圖案可重複多次，其中藉由使用中間低折射率層及低碳層將高碳低折射率層與高折射率層分離來防止碳介導降解。此由展示各種描述層中之相對碳含量之相關聯碳含量圖繪示。
在一些實施例中，TiCl4 (或其他Ti鹵化物)及H2 O係用於TiO2 層形成之前驅物。TiO2 層內之AlCl3 (或其他Al鹵化物)及H2 O可用於在TiO2 層中形成具有減弱結晶傾向之薄(1 nm) Al2 O3 。通常，所得DBR係使用習知ALD處理形成之高(TiO2 )折射率層及低(Al2 O3 )折射率層之一3 um至5 um多層堆疊。ALD可在180°C操作且TiCl4 、H2 O (或臭氧)及AlCl3 、H2 O及TMA、H2 O之脈衝可依次釋放至腔室中以逐一產生單原子層。當將一ALD腔室加熱至150°C至200°C時，LED (包含基板、半導體晶粒及磷光體板)可由帶式載體保持於適當位置中。在此等溫度處，TiO2 將結晶且無AlCl3 (或其他異質氧化物)之取代層形成一類合金結構且確保一非晶膜。藉由將非碳前驅物用於沈積於TiO2 層附近或近旁之層來消除碳截留。
上述交替層係很重要的，因為觀察到完全與AlCl3 一起生長之Al2 O3 層無與三甲基鋁一起生長之Al2 O3 之任何高碳區域以開裂及分層。即，始終與低碳AlCl3 一起生長之連續Al2 O3 層存在高應力之缺點。本發明之實施例平衡低碳區域之高應力與氧化鋁之高碳區域，同時平衡由氧化鋁之高碳區域引起之降解與低碳區域之低至無降解。
圖7繪示高溫操作壽命(HTOL)測試期間之提高效能。自圖形可見，由改良低碳DBR前驅物形成之LED具有比具有由習知有機金屬DBR前驅物形成之側壁之LED低得多之一失效率。
發光像素陣列(即，可定址LED分段)可尤其受益於所描述之低碳ALD DBR側壁塗層。與大體積聚矽氧粘合劑及TiO2 奈米粒子側壁相比，ALD DBR側壁提高效率，顯著減少會干擾精確光投射之像素間串擾，且可非常薄(例如小於10微米)，從而允許用於緊密堆積發光像素陣列中。
具有所描述之改良DBR側壁之發光像素陣列可支援受益於低串擾、細粒強度、光分佈之改良空間及時間控制之應用。此可包含(但不限於)自像素區塊或個別像素發射之光之精確空間圖案化。取決於應用，發射光可光譜不同、隨時間適應及/或對環境敏感。發光像素陣列可以各種強度、空間或時間模式提供預程式化光分佈。發射光可至少部分基於所接收之感測器資料且可用於光學無線通信。相關聯之光學器件在一像素、像素區塊或裝置級處可不同。一實例性發光像素陣列可包含具有含一相關聯共同光學器件之高強度像素之一共同控制中央區塊之一裝置，而邊緣像素可具有個別光學器件。由具有改良DBR側壁之發光像素陣列支援之常見應用包含攝影機閃光燈、汽車前照燈、建築及區域照明、街道照明及資訊顯示。
具有改良DBR側壁之一發光像素陣列可非常適合用於行動裝置之攝影機閃光燈應用。通常，來自一高強度LED之一強短暫閃光用於支援影像捕獲。不幸的是，對於習知LED閃光燈而言，大量光浪費於已被很好照明或原本無需照明之區域照明上。一發光像素陣列之使用可在一判定時間量內提供一場景之各部分之受控照明。此可允許攝影機閃光燈(例如)僅照射在滾動快門捕獲期間成像之區域，提供最小化跨一捕獲影像之信雜比且最小化一人或目標對象上或跨一人或目標對象之陰影之均勻照明，及/或提供突顯陰影之高對比度照明。若發光像素陣列之像素係光譜不同的，則可動態調整閃光照明之色溫以提供想要色調或溫暖。
僅主動照射一道路之選定區段之汽車前照燈亦由具有改良DBR側壁之發光像素陣列支援。使用紅外攝影機作為感測器，發光像素陣列僅啟動照射道路所需之像素，同時撤銷啟動會使行人或對向車輛駕駛員目眩之像素。另外，可選擇性照射道路外行人、動物或標誌以提高駕駛員環境意識。若發光像素陣列之像素係光譜不同的，則可根據各自白天、黃昏或夜晚條件來調整光之色溫。一些像素可用於光學無線車輛間通信。
建築及區域照明亦可受益於具有改良DBR側壁之發光像素陣列。發光像素陣列可用於選擇性及適應性照射建築物或區域以改良視覺顯示或降低照明成本。另外，發光像素陣列可用於投射媒體立面以用於裝飾動畫或視訊效應。結合追蹤感測器及/或攝影機，行人周圍區域之選擇性照明可為可能的。光譜不同像素可用於調整照明之色溫及支援特定波長園藝照明。
街道照明係可顯著受益於具有改良DBR側壁之發光像素陣列之使用之一重要應用。可使用一單一類型之發光陣列來模擬各種路燈類型以允許(例如)藉由適當啟動或撤銷啟動選定像素來切換於一I型線性路燈與一IV型半圓形路燈之間。另外，藉由根據環境條件或使用時間調整光束強度或分佈來降低街道照明成本。例如，可在沒有行人時減小光強度及分佈區域。若發光像素陣列係光譜不同的，則可根據各自白天、黃昏或夜晚條件來調整光之色溫。
具有改良DBR側壁之發光陣列亦非常適合於支援需要直接或投射顯示之應用。例如，可使用發光陣列來顯示或投射警告、緊急情況或資訊標誌。此允許(例如)投射變色或閃爍出口標誌。若具有改良DBR側壁之一發光陣列由大量像素組成，則可呈現文字或數字資訊。亦可提供方向箭頭或類似指示器。
儘管已詳細描述本發明，但熟習技術者應暸解，可在不背離本文中所描述之發明概念之精神之情況下鑑於本發明來對本發明進行修改。因此，本發明之範疇不意欲受限於所繪示及描述之特定實施例。
100:經磷光體轉換之LED (pcLED) 102:半導體二極體結構 104:基板 106:磷光體層或結構 200:pcLED陣列 202:基板 300:電子板 302:電力及控制模組 304:感測器模組 306:LED附接區域 402:波導 404:投影透鏡 500:半導體二極體結構 510:磷光體層或結構 520:反射器或側壁 530:基板 600:LED基板側壁 602:藍寶石基板 610:低折射率層 612:高折射率層 614:高碳區域 620:低碳區域 622:低碳區域 624:低碳層 1100:分段單片陣列 1110:n-GaN半導體層 1111:主動區域 1112:p-GaN半導體層 1113:p接點 1114:基板 1115:鈍化層 1117:波長轉換器材料 1120:光學隔離 1130:溝槽 1140:n接點
參考下圖描述本發明之非限制性及非窮舉性實施例，其中所有各種圖中之相同元件符號係指相同部分，除非另有規定。
圖1展示一實例pcLED之一示意橫截面圖。
圖2A及圖2B分別展示一pcLED陣列之橫截面圖及俯視示意圖。圖2C展示一pcLED單片陣列之一透視圖。
圖3A展示其上可安裝一pcLED陣列之一電子板之一示意俯視圖，且圖3B類似地展示安裝於圖3A之電子板上之一pcLED陣列。
圖4A展示相對於波導及一投影透鏡配置之一pcLED陣列之一示意橫截面圖。圖4B展示無波導之類似於圖4A之配置之一配置。
圖5展示一實例pcLED陣列之一示意橫截面圖。
圖6繪示具有一附接高可靠性分散式布拉格反射器之一LED基板側壁之一實施例；及
圖7繪示高溫操作壽命(HTOL)測試期間之提高效能。
600:LED基板側壁
602:藍寶石基板
610:低折射率層
612:高折射率層
614:高碳區域
620:低碳區域
622:低碳區域
624:低碳層

Claims (16)

  1. 一種一基板上之分散式布拉格反射器(DBR)結構，其包括：多個高折射率層，各個高折射率層包括氧化鈦(TiO2)；及多個低折射率層，各個低折射率層具有一高碳區域及接觸該等高折射率層之至少一者之至少一低碳區域。
  2. 如請求項1之DBR結構，其中將該等高折射率層及該等低折射率層堆疊至小於10微米之一厚度。
  3. 如請求項1之DBR結構，其中該等高折射率層及該等低折射率層之各自層之各者具有小於0.2微米之一厚度。
  4. 如請求項1之DBR結構，其中該等低折射率層之各者進一步包括Al2O3及SiO2之至少一者。
  5. 如請求項1之DBR結構，其中該等低折射率層之該高碳區域進一步包括由一有機金屬前驅物形成之Al2O3。
  6. 如請求項1之DBR結構，其中該等低折射率層之該高碳區域進一步包括由三甲基鋁形成之Al2O3。
  7. 如請求項1之DBR結構，其中該等低折射率層之該低碳區域進一步包 括由一鹵化物前驅物形成之Al2O3。
  8. 如請求項1之DBR結構，其中該等低折射率層之該低碳區域進一步包括由AlCl3形成之Al2O3。
  9. 如請求項1之DBR結構，其中該基板係藍寶石。
  10. 一種用於在一基板上形成一DBR結構之原子層沈積(ALD)程序，其包括以下步驟：沈積具有一高碳區域之一第一低折射率層；沈積具有接觸該高碳區域之一低碳區域之一第一低折射率層；沈積包括接觸該第一低折射率層之該低碳區域之氧化鈦(TiO2)之一高折射率層；沈積具有接觸該高折射率層之一低碳區域之一第二低折射率層；及沈積具有一高碳區域之一第二低折射率層。
  11. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該第一低折射率層及該第二低折射率層進一步包括Al2O3。
  12. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該第一低折射率層及該第二低折射率層之該高碳區域進一步包括由一有機金屬前驅物形成之Al2O3。
  13. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該第一低折射率層及該第二低折射率層之該高碳區域進一步包括由三甲基鋁形成之Al2O3。
  14. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該第一低折射率層及該第二低折射率層之該低碳區域進一步包括由一鹵化物前驅物形成之Al2O3。
  15. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該第一低折射率層及該第二低折射率層之該低碳區域進一步包括由AlCl3形成之Al2O3。
  16. 如請求項10之用於在一基板上形成一DBR結構之ALD程序，其中該基板係藍寶石。
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