TWI752425B - 光模塊裝置以及光模塊裝置製造方法 - Google Patents

光模塊裝置以及光模塊裝置製造方法 Download PDF

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TWI752425B
TWI752425B TW109106612A TW109106612A TWI752425B TW I752425 B TWI752425 B TW I752425B TW 109106612 A TW109106612 A TW 109106612A TW 109106612 A TW109106612 A TW 109106612A TW I752425 B TWI752425 B TW I752425B
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electronic component
platform
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optical module
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鄭漢標
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大陸商訊芸電子科技（中山）有限公司
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    • G—PHYSICS
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Abstract

一種光模塊裝置以及光模塊裝置製造方法。光模塊裝置包括基板、印刷電路、電子元件安裝部、有源器件以及透鏡。印刷電路形成於上述基板。電子元件安裝部具有凹槽，並設置於上述基板。有源器件包括激光器或光探測器，設置於上述凹槽。透鏡設置於上述有源器件上。

Description

光模塊裝置以及光模塊裝置製造方法
本發明係有關於一種光纖通信技術領域，特別是有關於一種能夠提供更好導熱性能的光模塊裝置製造方法以及光模塊裝置。
光纖通訊網路具有低傳輸損失、高數據保密性、優秀的抗干擾性，以及超大頻寬等特性，已是現代主要的資訊通訊方式，其中，用於接受來自光纖網路的光訊號並將其轉換成電訊號傳輸，及/或將電訊號轉換成光訊號再藉由光纖網路向外傳輸的光收發器(Optical Transceiver)是光纖通訊技術中最重要的基礎元件之一。
光收發器中的光模塊裝置具有激光器以提供光源，然而，激光器在工作過程中會產生大量的熱，而電路板的導熱性能很弱，無法滿足散熱要求。
有鑑於此，在本申請一實施例中，使用了開槽的襯墊結構來容置容易發熱的有源器件以解決散熱的問題。
本申請一實施例揭露一種光模塊裝置，包括：基板；印刷電路，形成於上述基板；電子元件安裝部，設置於上述基板，其中上述電子元件安裝部包括凹槽；有源器件，包括激光器或光探測器，設置於上述凹槽；以及透鏡，設置於上述有源器件上。
本申請另一實施例揭露一種光模塊裝置製造方法，包括：提供基板；形成印刷電路於上述基板；提供電子元件安裝部，其中上述電子元件安裝部包括凹槽；設置有源器件於上述凹槽，其中上述有源器件包括激光器或光探測器；設置透鏡於上述有源器件上；以及將具有上述有源器件的上述電子元件安裝部與上述基板結合。
根據本申請一實施例，光模塊裝置更包括外殼；以及導熱片，設置於上述電子元件安裝部與上述外殼之間。
根據本申請一實施例，其中上述有源器件在上述凹槽中時，上述有源器件的頂部與上述凹槽的頂部齊平。
根據本申請一實施例，光模塊裝置更包括監控器與放大器，設置於上述基板，並透過印刷電路電性連接。
根據本申請一實施例，上述有源器件更包括監控器與放大器，上述有源器件之間透過印刷電路電性連接。
根據本申請一實施例，其中上述有源器件與上述凹槽之間的間隙以導熱膠填充。
根據本申請一實施例，其中上述電子元件安裝部為金屬襯墊。
根據本申請實施例，使用了金屬襯墊結構，相較於傳統陶瓷襯墊，具有更好的導熱效率，另外，使用了開槽的金屬襯墊結構來容置容易發熱的有源器件，再利用導熱膠填充有源器件與凹槽之間的間隙，更能提高導熱的效能。本申請實施例使用金屬襯墊結構另一個優點為能夠提供有源器件電磁干擾屏蔽作用，改善了電子元件操作的穩定度。另外，裝配電子元件的基板與裝配有源器件的電子元件安裝部的封裝可分開進行，形成模塊化生產，有效提高組裝的效率。
10:光模塊裝置
12:基板
14:印刷電路
16,24A,24B:有源器件
18:透鏡
19:電路元件
20:電子元件安裝部
22A,22B:凹槽
30:外殼
32:導熱片
S11-S18:步驟流程
圖1顯示根據本申請一實施例所述的光模塊裝置的立體圖。
圖2顯示根據本申請一實施例所述的光模塊裝置的側視圖。
圖3顯示根據本申請另一實施例所述的光模塊裝置的立體圖。
圖4顯示根據本申請一實施例所述的電子元件安裝部的爆炸圖。
圖5顯示根據本申請另一實施例所述的光模塊裝置的爆炸圖。
圖6顯示根據本申請一實施例所述的光模塊裝置的製造方法的操作流程圖。
為了便於本領域普通技術人員理解和實施本發明，下面結合附圖與實施例對本發明進一步的詳細描述，應當理解，本發明提供許多可供應用的發明概念，其可以多種特定型式實施。熟悉此技藝之人士可利用這些實施例或其他實施例所描述之細節及其他可以利用的結構，邏輯和電性變化，在沒有離開本發明之精神與範圍之下以實施發明。
本發明說明書提供不同的實施例來說明本發明不同實施方式的技術特徵。其中，實施例中的各元件之配置係為說明之用，並非用以限制本發明。且實施例中圖式標號之部分重複，係為了簡化說明，並非意指不同實施例之間的關聯性。其中，圖示和說明書中使用之相同的元件編號係表示相同或類似之元件。本說明書之圖示為簡化之形式且並未以精確比例繪製。為清楚和方便說明起見，方向性用語(例如頂、底、上、下以及對角)係針對伴隨之圖示說明。而以下說明所使用之方向性用語在沒有明確使用在以下所附之申請專利範圍時，並非用來限制本發明之範圍。
再者，在說明本發明一些實施例中，說明書以特定步驟順序說明本發明之方法以及(或)程序。然而，由於方法以及程序並未必然根據所述之特定步驟順序實施，因此並未受限於所述之特定步驟順序。熟習此項技藝者可知其他順序也為可能之實施方式。因此，於說明書所述之特定步驟順序並未用 來限定申請專利範圍。再者，本發明針對方法以及(或)程序之申請專利範圍並未受限於其撰寫之執行步驟順序，且熟習此項技藝者可瞭解調整執行步驟順序並未跳脫本發明之精神以及範圍。
圖1顯示根據本申請一實施例所述的光模塊裝置的立體圖。圖2顯示根據本申請一實施例所述的光模塊裝置的側視圖。根據本申請一實施例所述的光模塊裝置10，包括基板12，印刷電路14，電子元件安裝部20(component mounting block，CMB)，有源器件16以及其他電路元件19。根據本申請一實施例，電路元件19可包括例如監控器、激光控制器與放大器等電子元件。為了方便說明，在圖1與圖2中並未顯示透鏡、導熱片以及外殼。根據本申請一實施例，基板12可用不同的材料製作，如矽、高分子和陶瓷材料製作。基板12上具有預先設計的內連線結構、透過網版印刷方式形成的印刷電路14以及相關電子元件，電子元件安裝部20同樣設置於基板12。印刷電路14包括用來實施光信號發射或接收功能所必要的電路元件，此為本領域技術人員所熟知，在此不予贅述以精簡說明。
圖3顯示根據本申請另一實施例所述的光模塊裝置的立體圖。在圖3中，加入了透鏡18。透鏡18設置於圖1中的有源器件16上。根據本申請一實施例，透鏡18為聚光透鏡，激光器所發射的光束經由聚光透鏡彙聚後耦合(Coupling)到光纖，然後藉由光纖傳輸至其他光接收器(圖未顯示)。根據本申請其他實施例，透鏡18還可視需要增加准直透鏡，用來調整光束的方向，例如轉換成平行光束。
圖4顯示根據本申請一實施例所述的電子元件安裝部的爆炸圖。根據本申請一實施例，電子元件安裝部20整體為L型，可為為金屬襯墊。電子元件安裝部20包括凹槽22A、22B。有源器件24A、24B分別透過膠水或黏著層附著至凹槽22A、22B底部。根據本申請一實施例，膠水或黏著層可包括聚醯亞胺(Polyimide，PI)、聚乙烯對苯二甲酸酯(Polyethylene Terephthalate，PET)、鐵氟龍(Teflon)、液晶高分子(Liquid Crystal Polymer，LCP)、聚乙烯(Polyethylene，PE)、聚丙烯(Polypropylene，PP)、聚苯乙烯(Polystyrene，PS)、聚氯乙烯(Polyvinyl Chloride，PVC)、尼龍(Nylon或Polyamides)、聚甲基丙烯酸甲酯(Polymethylmethacrylate，PMMA)、ABS塑膠(Acrylonitrile-Butadiene-Styrene)、酚樹脂(Phenolic Resins)、環氧樹脂(Epoxy)、聚酯(Polyester)、矽膠(Silicone)、聚氨基甲酸乙酯(Polyurethane，PU)、聚醯胺-醯亞胺(polyamide-imide，PAI)或其組合，但不限於此，只要具有黏著特性的材料皆可應用於本申請。
如圖4所示，以有源器件24A為例，當有源器件24A設置於凹槽22A中時，有源器件24A的頂部可與凹槽22A的頂部齊平。根據本申請實施例，有源器件24A可為激光器，有源器件24B可為光探測器。有源器件之間透過網版以及印刷工藝所形成的印刷電路(圖未顯示)電性連接。激光器為光源。在光通訊系統中，通常使用發光二極體或雷射二極體作為光源。根據本申請一實施例，激光器可包括單個或多個垂直腔面發射雷射二極體(Vertical Cavity Surface Emitting Laser Diode，VCSEL)，或稱面射型雷射二極體，多個VCSEL構成陣列，並由驅動晶片驅動而發射光訊號。在其他實施例中，亦可使用其他可作為光源的元件，例如發光二極體、邊射型雷射二極體(Edge Emitting Laser Diode，EELD)或分散式反饋雷射器(Distributed Feedback Laser，DFB)。另外，如圖4所示，有源器件24A與凹槽22A之間的間隙以導熱膠填充。同樣的，有源器件24B與凹槽22B之間的間隙也以導熱膠填充。根據本申請一實施例，導熱膠可以是銀膠或錫膏，光探測器可為PIN光二極體或雪崩式光電二極體(Avalance Photodiode，APD)，用以將由透鏡18所耦合的光束轉換成電訊號。
當有源器件24A、24B以及透鏡18安裝於電子元件安裝部20後，再將電子元件安裝部20組裝於基板12，電子元件安裝部20上的有源器件24A、24B透過打線接合(Wire bonding)程序電性連接至基板12上的印刷電路14。
圖5顯示根據本申請另一實施例所述的光模塊裝置的爆炸圖。根據本申請一實施例，電子元件安裝部20還可透過導熱片32與光模塊裝置的外殼30接觸，以將有源器件24A、24B所產生的熱傳導至光模塊裝置的外殼，藉以提高散熱的效能。
圖6顯示根據本申請一實施例所述的光模塊裝置的製造方法的操作流程圖。參閱圖1-5，首先透過表面黏著技術(surface-mount technology，SMT)將相關電子元件(surface-mount devices，SMD)(例如電阻、電容、電晶體、積體電路等)安裝於基板12(步驟S11)，並在基板12透過網版印刷方式形成印刷電路14以電性連接相關電子元件(步驟S12)。在其他實施例中，也可搭配通孔插裝技術(Through-hole technology)將相關電子元件安裝於基板12。基板12可用不同的材料製作，如矽、高分子和陶瓷材料製作。基板12上具有透過網版印刷方式形成的印刷電路14以及相關電子元件。
接下來，將有源器件24A、24B分別透過膠水或黏著層附著至電子元件安裝部20的凹槽22A、22B底部(步驟S13)，根據本申請一實施例，電子元件安裝部20可為為金屬襯墊，膠水或黏著層可包括聚醯亞胺(Polyimide，PI)、聚乙烯對苯二甲酸酯(Polyethylene Terephthalate，PET)、鐵氟龍(Teflon)、液晶高分子(Liquid Crystal Polymer，LCP)、聚乙烯(Polyethylene，PE)、聚丙烯(Polypropylene，PP)、聚苯乙烯(Polystyrene，PS)、聚氯乙烯(Polyvinyl Chloride，PVC)、尼龍(Nylon or Polyamides)、聚甲基丙烯酸甲酯(Polymethylmethacrylate，PMMA)、ABS塑膠(Acrylonitrile-Butadiene-Styrene)、酚樹脂(Phenolic Resins)、環氧樹脂(Epoxy)、聚酯(Polyester)、矽膠(Silicone)、聚氨基甲酸乙酯(Polyurethane，PU)、聚醯胺-醯亞胺(polyamide-imide，PAI)或其組合，但不限於此，只要具有黏著特性的材料皆可應用於本申請。在步驟S13中，尚包括烘烤以及在有源器件24A與凹槽22A之間，有源器件24B與凹槽22B之間的間隙以導熱膠填充的步驟。
接下來，在電子元件安裝部20執行鋼網以及印刷工藝以形成印刷電路(步驟S14)，印刷電路可以將有源器件間的電路導通。接下來，將透鏡18置於有源器件24A、24B上方(步驟S15)，在步驟S15中，尚包括光學對準程序，首先可在基板12上設置定位部以協助有源器件24A(激光器)與透鏡18的初步對準，此時可塗布UV膠於透鏡18與基板12之間，為了提高定位的精確度，可透過電荷耦合元件(Charge Coupled Device，CCD)攝影機對位，待透鏡18定位完成後，對 UV膠照射紫外光以固化UV膠。透過光學對準程序將光學鏡片耦合在有源器件24A(激光器)和有源器件24B(光探測器)上，可完成一個完整的光路。
接下來，將組裝好有源器件24A、24B以及透鏡18的電子元件安裝部20安裝於基板12(步驟S16)，並透過打線接合(Wire bonding)程序使得電子元件安裝部20上的有源器件24A、24B電性連接至基板12上的印刷電路14(步驟S17)，最後，將基板12安裝至外殼30，其中，導熱片32設置於電子元件安裝部20與外殼30之間，完成本申請一實施例所述的光模塊裝置。必須說明的是，步驟S11-S12以及步驟S13-S15的順序並非固定，熟習此項技藝者可先行完成步驟S11-S12，再執行步驟S13-S15，也可以先行完成步驟S13-S15，再執行步驟S11-S12，最後再執行步驟S16-18以完成本申請一實施例所述的光模塊裝置。
根據本申請實施例，使用了金屬襯墊結構，相較於傳統陶瓷襯墊，具有更好的導熱效率，另外，使用了開槽的金屬襯墊結構來容置容易發熱的有源器件，再利用導熱膠填充有源器件與凹槽之間的間隙，更能提高導熱的效能。本申請實施例使用金屬襯墊結構另一個優點為能夠提供有源器件電磁干擾屏蔽作用，改善了電子元件操作的穩定度。另外，裝配電子元件的基板與裝配有源器件的電子元件安裝部的封裝可分開進行，形成模塊化生產，有效提高組裝的效率。
綜上所述，本發明符合發明專利要件，爰依法提出專利申請。惟，以上該者僅為本發明之較佳實施方式，本發明之範圍並不以上述實施方式為限，舉凡熟悉本案技藝之人士爰依本發明之精神所作之等效修飾或變化，皆應涵蓋於以下申請專利範圍內。
20:電子元件安裝部
24A,24B:有源器件
22A,22B:凹槽

Claims (10)

  1. 一種光模塊裝置，包括：一基板；一印刷電路，形成於上述基板；一電子元件安裝部，其中上述電子元件安裝部為階梯型，包括一第一平台以及高於上述第一平台的第二平台，上述第一平台以及上述第二平台之間具有一側壁，且上述第二平台具有一凹槽，上述基板設置於上述第一平台，並與上述側壁連接；一有源器件，包括激光器或光探測器，設置於上述凹槽；以及一透鏡，設置於上述有源器件上。
  2. 如請求項1所述的光模塊裝置，更包括：一外殼；以及一導熱片，設置於上述電子元件安裝部與上述外殼之間。
  3. 如請求項1所述的光模塊裝置，更包括一監控器與一放大器，設置於上述基板，並透過上述印刷電路電性連接。
  4. 如請求項1所述的光模塊裝置，其中上述有源器件與上述凹槽之間的間隙以導熱膠填充。
  5. 如請求項1所述的光模塊裝置，其中上述電子元件安裝部為一金屬襯墊。
  6. 一種光模塊裝置製造方法，包括：提供一基板； 形成一印刷電路於上述基板；提供一電子元件安裝部，其中上述電子元件安裝部為階梯型，包括一第一平台以及高於上述第一平台的第二平台，上述第一平台以及上述第二平台之間具有一側壁，且上述第二平台具有一凹槽，上述基板設置於上述第一平台，並與上述側壁連接；設置有源器件於上述凹槽，其中上述有源器件包括激光器或光探測器；設置一透鏡於上述有源器件上；以及將具有上述有源器件的上述電子元件安裝部與上述基板結合。
  7. 如請求項6所述的光模塊裝置製造方法，更包括：提供一外殼；以及設置一導熱片於上述電子元件安裝部與上述外殼之間。
  8. 如請求項6所述的光模塊裝置製造方法，更包括一監控器與一放大器，設置於上述基板，並透過上述印刷電路電性連接。
  9. 如請求項6所述的光模塊裝置製造方法，其中上述有源器件與上述凹槽之間的間隙以導熱膠填充。
  10. 如請求項6所述的光模塊裝置製造方法，其中上述電子元件安裝部為金屬襯墊。
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Families Citing this family (1)

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Publication number Priority date Publication date Assignee Title
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103984066A (zh) * 2014-05-20 2014-08-13 昆山柯斯美光电有限公司 用于高速传输的多路并行光组件及其组装方法
US20170097479A1 (en) * 2015-10-01 2017-04-06 Sumitomo Electric Industries, Ltd. Optical apparatus, printed circuit board
CN208937754U (zh) * 2018-10-11 2019-06-04 深圳市光为光通信科技有限公司 一种军工多路并行光模块
TW201928424A (zh) * 2017-12-12 2019-07-16 日商日東電工股份有限公司 光電混合基板

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6299362B1 (en) * 1998-04-22 2001-10-09 Stratos Lightwave, Inc. High speed optical interface converter module having mounting halves
US8938136B2 (en) * 2012-08-08 2015-01-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Opto-electronic system having flip-chip substrate mounting
TW201613068A (en) 2014-09-17 2016-04-01 Cheering Sun Applied Materials Co Ltd Multi-die substrate-less LED device
TWI617852B (zh) * 2014-10-16 2018-03-11 英屬開曼群島商鴻騰精密科技股份有限公司 光電轉換裝置
CN204331096U (zh) * 2014-12-31 2015-05-13 中航海信光电技术有限公司 一种并行光组件
CN104965267B (zh) * 2015-07-13 2016-09-21 青岛海信宽带多媒体技术有限公司 光模块
TWI583086B (zh) 2016-07-18 2017-05-11 華星光通科技股份有限公司 光發射器散熱結構及包含其的光發射器
CN107907947A (zh) * 2017-12-18 2018-04-13 江苏奥雷光电有限公司 一种cxp模块结构
CN207908746U (zh) * 2018-02-23 2018-09-25 武汉亿思源光电技术有限公司 一种光模块电路板

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103984066A (zh) * 2014-05-20 2014-08-13 昆山柯斯美光电有限公司 用于高速传输的多路并行光组件及其组装方法
US20170097479A1 (en) * 2015-10-01 2017-04-06 Sumitomo Electric Industries, Ltd. Optical apparatus, printed circuit board
TW201928424A (zh) * 2017-12-12 2019-07-16 日商日東電工股份有限公司 光電混合基板
CN208937754U (zh) * 2018-10-11 2019-06-04 深圳市光为光通信科技有限公司 一种军工多路并行光模块

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