TWI750656B - Display device - Google Patents

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Publication number
TWI750656B
TWI750656B TW109115858A TW109115858A TWI750656B TW I750656 B TWI750656 B TW I750656B TW 109115858 A TW109115858 A TW 109115858A TW 109115858 A TW109115858 A TW 109115858A TW I750656 B TWI750656 B TW I750656B
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light
cathode
terminal
display device
emitting element
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TW109115858A
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Chinese (zh)
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TW202101415A (en
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金谷康弘
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日商日本顯示器股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/302Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements characterised by the form or geometrical disposition of the individual elements
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40Materials therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

本發明在於提供一種可抑制將陽極端子與陰極端子對向配置之微型LED中產生之電壓下降的顯示裝置。 一實施形態之顯示裝置具備:基板;發光元件,其安裝於基板上;陽極端子,其配置於發光元件之底部;及陰極端子,其配置於與陽極端子相反側之發光元件之出射面;且陰極端子由金屬材料形成。The present invention is to provide a display device capable of suppressing a voltage drop in a micro LED in which an anode terminal and a cathode terminal are arranged to face each other. A display device according to one embodiment includes: a substrate; a light-emitting element mounted on the substrate; an anode terminal disposed on the bottom of the light-emitting element; and a cathode terminal disposed on an exit surface of the light-emitting element on the opposite side of the anode terminal; and The cathode terminal is formed of a metallic material.

Description

顯示裝置display device

本發明之實施形態係關於一種顯示裝置。 Embodiments of the present invention relate to a display device.

雖已知有使用自發光元件即發光二極體(LED:Light Emitting Diode)之LED顯示器,但近年來,作為更高精細化之顯示裝置,開發出使用稱為微型LED之微小二極體元件之顯示裝置(以下,表述為微型LED顯示器)。 Although an LED display using a light emitting diode (LED: Light Emitting Diode), which is a self-luminous element, has been known, in recent years, as a display device with a higher definition, a micro-diode element called a micro LED has been developed. The display device (hereinafter, referred to as a micro LED display).

該微型LED顯示器與先前之液晶顯示顯示器或有機EL(Electro Luminescent:電致發光)顯示器不同,由於在顯示區域,安裝晶片狀之多個微型LED而形成,故容易使高精細化與大型化並存,而作為下一代顯示器備受矚目。 Unlike conventional liquid crystal displays and organic EL (Electro Luminescent) displays, this micro LED display is formed by mounting a plurality of micro LEDs in the form of wafers in the display area, so it is easy to achieve high definition and large size. , while attracting much attention as a next-generation display.

於微型LED中,有隔著發光層對向配置陽極端子(陽極)與陰極端子(陰極)者。此種微型LED對陽極端子與陰極端子施加電壓而發光。 In micro LEDs, there are those in which an anode terminal (anode) and a cathode terminal (cathode) are opposed to each other with a light-emitting layer interposed therebetween. Such a micro LED emits light by applying a voltage to an anode terminal and a cathode terminal.

一般而言,上述之陰極端子配置於光之出射面側,且基於光之提取效率之觀點,多由透明導電材料形成。又,上述之陰極端子多跨及複數個像素連續形成,且於未配置微型LED之外周部(非顯示區域)中與電源配線連接。 Generally speaking, the above-mentioned cathode terminal is disposed on the light emitting surface side, and is often formed of a transparent conductive material from the viewpoint of light extraction efficiency. In addition, the above-mentioned cathode terminals are formed continuously across a plurality of pixels, and are connected to the power supply wiring in the outer peripheral portion (non-display area) where the micro LEDs are not arranged.

然而,於此情形時,基於透明導電材料之電阻之電壓下降,越遠離上述電源配線配置之微型LED,施加於陰極端子之電壓可能越 小。 However, in this case, the voltage drop based on the resistance of the transparent conductive material, the further away from the micro-LED of the above-mentioned power wiring configuration, the higher the voltage applied to the cathode terminal may be. small.

本揭示之目的之一在於提供一種可抑制對向配置陽極端子與陰極端子之微型LED中產生之電壓下降的顯示裝置。 One of the objects of the present disclosure is to provide a display device capable of suppressing a voltage drop in a micro LED in which an anode terminal and a cathode terminal are arranged opposite to each other.

一實施形態之顯示裝置具備:基板;發光元件,其安裝於上述基板上;陽極端子,其配置於上述發光元件之底部;及陰極端子,其配置於與上述陽極端子相反側之上述發光元件之出射面;且上述陰極端子由金屬材料形成。 A display device according to an embodiment includes: a substrate; a light-emitting element mounted on the substrate; an anode terminal disposed on the bottom of the light-emitting element; and a cathode terminal disposed between the light-emitting element on the opposite side to the anode terminal an exit surface; and the cathode terminal is formed of a metal material.

根據上述構成之顯示裝置,可提供一種能抑制對向配置陽極端子與陰極端子之微型LED中產生之電壓下降的顯示裝置。 According to the display device having the above-described configuration, it is possible to provide a display device capable of suppressing a voltage drop in the micro LEDs in which the anode terminal and the cathode terminal are arranged to face each other.

1:顯示裝置 1: Display device

2:顯示面板 2: Display panel

3:第1電路基板 3: The first circuit board

4:第2電路基板 4: Second circuit board

5:面板驅動器 5: Panel driver

10:發光元件 10: Light-emitting elements

10B:發光元件 10B: Light-emitting element

10G:發光元件 10G: Light-emitting element

10R:發光元件 10R: Light-emitting element

21:第1主電源線 21: 1st main power cord

22:共通電源配線 22: Common power wiring

23:像素信號線 23: Pixel signal line

24:初始化電源線 24: Initialize the power cord

25:重設電源線 25: Reset the power cord

31:絕緣基板 31: Insulating substrate

32:底塗層 32: Base coat

33:層間絕緣膜 33: Interlayer insulating film

34:平坦化膜 34: Flattening film

35:導電層 35: Conductive layer

36:絕緣層 36: Insulation layer

37:像素電極 37: Pixel electrode

38:共通電極 38: Common electrode

39:平坦化膜 39: Flattening film

40:第1中繼電極 40: 1st relay electrode

40B:第1中繼電極 40B: 1st relay electrode

40G:第1中繼電極 40G: 1st relay electrode

40R:第1中繼電極 40R: 1st relay electrode

41:第2中繼電極 41: 2nd relay electrode

42:透明導電層 42: Transparent conductive layer

43:元件絕緣層 43: Component insulation layer

44:平坦化膜 44: Flattening film

45:偏光板 45: polarizer

AN:陽極端子 AN: Anode terminal

AR:陣列基板 AR: Array substrate

BA:彎曲區域 BA: Bending area

BG:輸出控制信號 BG: output control signal

BCT:輸出電晶體 BCT: output transistor

CA:陰極端子 CA: Cathode terminal

CH1B:開口部 CH1B: Opening

CH1G:開口部 CH1G: Opening

CH1R:開口部 CH1R: Opening

CH2B:開口部 CH2B: Opening

CH2G:開口部 CH2G: Opening

CH2R:開口部 CH2R: Opening

CH3B:開口部 CH3B: Opening

CH3G:開口部 CH3G: Opening

CH3R:開口部 CH3R: Opening

CH4B:開口部 CH4B: Opening

CH4G:開口部 CH4G: Opening

CH4R:開口部 CH4R: Opening

CH5:開口部 CH5: Opening

CH6:開口部 CH6: Opening

Cled:元件電容 Cled: element capacitance

Cs1:保持電容 Cs1: Holding Capacitor

Cs2:輔助電容 Cs2: auxiliary capacitor

DA:顯示區域 DA: display area

DRT:驅動電晶體 DRT: Drive Transistor

E1:第1電極 E1: 1st electrode

E2:第2電極 E2: 2nd electrode

EX:短邊 EX: Short side

EY:長邊 EY: long edge

GD:閘極驅動器 GD: Gate Driver

GE:閘極電極 GE: gate electrode

GI:閘極絕緣膜 GI: Gate insulating film

IST:初始化電晶體 IST: Initialize Transistor

IG:初始化控制信號 IG: Initialize control signal

MT:端子區域 MT: Terminal area

NDA:非顯示區域 NDA: non-display area

PVDD:第1電源電位 PVDD: 1st power supply potential

PVSS:第2電源電位 PVSS: 2nd power supply potential

PX:像素 px: pixel

RG:重設控制信號 RG: reset control signal

RST:重設電晶體 RST: reset transistor

SC:半導體層 SC: Semiconductor layer

SG:像素控制信號 SG: pixel control signal

SPB:副像素 SPB: Sub pixel

SPG:副像素 SPG: Sub pixel

SPR:副像素 SPR: Sub pixel

SST:像素電晶體 SST: Pixel Transistor

Vini:初始化電壓 Vini: initialization voltage

Vsig:像素信號 Vsig: pixel signal

X:第1方向 X: 1st direction

Y:第2方向 Y: 2nd direction

Z:第3方向 Z: 3rd direction

圖1係概略性顯示實施形態之顯示裝置之構成之立體圖。 FIG. 1 is a perspective view schematically showing the configuration of a display device according to an embodiment.

圖2係用以對該實施形態之顯示裝置之電路構成之一例進行說明的圖。 FIG. 2 is a diagram for explaining an example of the circuit configuration of the display device of the embodiment.

圖3係模式性顯示該實施形態之顯示裝置之剖面構造之一例之圖。 FIG. 3 is a diagram schematically showing an example of the cross-sectional structure of the display device of this embodiment.

圖4係模式性顯示該實施形態之顯示裝置之像素構造之一例的俯視圖。 FIG. 4 is a plan view schematically showing an example of the pixel structure of the display device of this embodiment.

圖5係模式性顯示構成該實施形態之顯示裝置之陰極端子之佈局之一例的俯視圖。 FIG. 5 is a plan view schematically showing an example of the layout of the cathode terminals constituting the display device of this embodiment.

圖6係模式性顯示構成該實施形態之顯示裝置之陰極端子之佈局之另一例的俯視圖。 FIG. 6 is a plan view schematically showing another example of the layout of the cathode terminals constituting the display device of this embodiment.

圖7係模式性顯示比較例之顯示裝置之剖面構造之一例之圖。 FIG. 7 is a diagram schematically showing an example of a cross-sectional structure of a display device of a comparative example.

一面參照圖式一面對若干實施形態進行說明。 Some embodiments will be described with reference to the drawings.

另,揭示僅為一例,關於業者可容易想到保持發明主旨之適當變更,當然包含於本發明之範圍內。又,圖式為更明確說明,而有與實際態樣相比進行模式性顯示之情形,但僅為一例,並非限定本發明之解釋者。於各圖中,有時對連續配置之同一或類似之要素省略符號。又,於本說明書與各圖式中,有時對與既出之圖式中所述者發揮同一或類似之功能之構成要素標註同一參照符號,省略重複之詳細說明。 It should be noted that the disclosure is merely an example, and it goes without saying that appropriate modifications to maintain the gist of the invention can be easily conceived by those in the industry. In addition, the drawings are shown more clearly than the actual state in some cases, but they are only an example and are not intended to limit the interpreter of the present invention. In each drawing, the symbol may be omitted for the same or similar elements arranged consecutively. In addition, in this specification and each drawing, the same reference number may be attached|subjected to the component which performs the same or similar function as the description in the previous drawing, and the repeated detailed description may be abbreviate|omitted.

圖1係概略性顯示本實施形態之顯示裝置1之構成之立體圖。圖1顯示藉由第1方向X、垂直於第1方向X之第2方向Y、及垂直於第1方向X及第2方向Y之第3方向Z規定之三維空間。另,第1方向X及第2方向Y相互正交,但亦可以90度以外之角度交叉。又,於本實施形態中,將第3方向Z定義為上,將與第3方向Z相反側之方向定義為下。於設為「第1構件上之第2構件」及「第1構件下之第2構件」之情形時,第2構件可與第1構件相接,亦可與第1構件離開而定位。 FIG. 1 is a perspective view schematically showing the configuration of the display device 1 of the present embodiment. 1 shows a three-dimensional space defined by a first direction X, a second direction Y perpendicular to the first direction X, and a third direction Z perpendicular to the first direction X and the second direction Y. In addition, although the 1st direction X and the 2nd direction Y are orthogonal to each other, they may cross at an angle other than 90 degrees. In addition, in this embodiment, the 3rd direction Z is defined as upper, and the direction opposite to the 3rd direction Z is defined as lower. In the case of "a second member above the first member" and "a second member below the first member", the second member may be in contact with the first member or may be positioned apart from the first member.

以下,於本實施形態中,主要對顯示裝置1為使用自發光元件即微型LED之微型LED顯示裝置(微型LED顯示器)之情形進行說明。 Hereinafter, in this embodiment, the case where the display device 1 is a micro LED display device (micro LED display) using a self-luminous element, that is, a micro LED will be mainly described.

如圖1所示,顯示裝置1具備顯示面板2、第1電路基板3及第2電路基板4等。 As shown in FIG. 1 , the display device 1 includes a display panel 2 , a first circuit board 3 , a second circuit board 4 , and the like.

顯示面板2於一例中為矩形狀。於圖示之例中,顯示面板2之短邊EX與第1方向X平行,顯示面板2之長邊EY與第2方向Y平行。第3方向Z相當於顯示面板2之厚度方向。亦可將第1方向X改讀為與顯示裝置1之短邊EX平行之方向,將第2方向Y改讀為與顯示裝置1之長邊EY平行之 方向,將第3方向Z改讀為顯示裝置1之厚度方向。顯示面板2之主表面平行於藉由第1方向X與第2方向Y規定之X-Y平面。顯示面板2具有顯示區域DA、及顯示區域DA外側之非顯示區域NDA。非顯示區域NDA具有端子區域MT。於圖示之例中,非顯示區域NDA包圍顯示區域DA。 The display panel 2 is rectangular in one example. In the illustrated example, the short side EX of the display panel 2 is parallel to the first direction X, and the long side EY of the display panel 2 is parallel to the second direction Y. The third direction Z corresponds to the thickness direction of the display panel 2 . The first direction X can also be read as a direction parallel to the short side EX of the display device 1, and the second direction Y can be read as a direction parallel to the long side EY of the display device 1. direction, and the third direction Z is read as the thickness direction of the display device 1 . The main surface of the display panel 2 is parallel to the X-Y plane defined by the first direction X and the second direction Y. The display panel 2 has a display area DA and a non-display area NDA outside the display area DA. The non-display area NDA has a terminal area MT. In the illustrated example, the non-display area NDA surrounds the display area DA.

顯示區域DA係顯示圖像之區域,具備例如矩陣狀配置之複數個像素PX。像素PX包含發光元件(微型LED)及用以驅動該發光元件之開關元件(驅動電晶體)等。 The display area DA is an area for displaying an image, and includes, for example, a plurality of pixels PX arranged in a matrix. The pixel PX includes a light-emitting element (micro LED), a switching element (driving transistor) for driving the light-emitting element, and the like.

端子區域MT沿顯示面板2之短邊EX設置,並包含用以將顯示面板2與外部裝置等電性連接之端子。 The terminal area MT is disposed along the short side EX of the display panel 2 and includes terminals for electrically connecting the display panel 2 with external devices and the like.

第1電路基板3安裝於端子區域MT之上,且與顯示面板2電性連接。第1電路基板3係例如可撓性印刷電路基板。第1電路基板3具備驅動顯示面板2之驅動IC晶片(以下,表述為面板驅動器)5等。另,於圖示之例中,面板驅動器5配置於第1電路基板3之上,但亦可配置於其之下。或,面板驅動器5可安裝於第1電路基板3以外者,亦可安裝於例如第2電路基板4。第2電路基板4係例如可撓性印刷電路基板。第2電路基板4於第1電路基板3之例如下方與第1電路基板3連接。 The first circuit board 3 is mounted on the terminal region MT, and is electrically connected to the display panel 2 . The first circuit board 3 is, for example, a flexible printed circuit board. The first circuit board 3 includes a driver IC chip (hereinafter, referred to as a panel driver) 5 and the like for driving the display panel 2 . In addition, in the example shown in the figure, the panel driver 5 is arranged on the first circuit board 3, but it may be arranged below it. Alternatively, the panel driver 5 may be mounted on other than the first circuit board 3 , and may be mounted on, for example, the second circuit board 4 . The second circuit board 4 is, for example, a flexible printed circuit board. The second circuit board 4 is connected to the first circuit board 3 , for example, below the first circuit board 3 .

上述之面板驅動器5介隔例如第2電路基板4與控制基板(未圖示)連接。面板驅動器5執行藉由基於例如自控制基板輸出之影像信號驅動複數個像素PX而於顯示面板2顯示圖像之控制。 The above-mentioned panel driver 5 is connected to a control board (not shown) via, for example, the second circuit board 4 . The panel driver 5 performs control of displaying an image on the display panel 2 by driving a plurality of pixels PX based on, for example, an image signal output from the control substrate.

另,顯示面板2亦可具有標註斜線顯示之彎曲區域BA。彎曲區域BA係將顯示裝置1收納於電子機器等之框體時彎曲之區域。彎曲區域BA位於非顯示區域NDA中之端子區域MT側。於彎曲區域BA彎曲之狀態下,第1電路基板3及第2電路基板4以與顯示面板2對向之方式,配置於 顯示面板2之下方。 In addition, the display panel 2 may also have a curved area BA marked with oblique lines. The curved area BA is a curved area when the display device 1 is accommodated in a casing of an electronic device or the like. The bent area BA is located on the side of the terminal area MT in the non-display area NDA. In a state where the bending area BA is bent, the first circuit board 3 and the second circuit board 4 are arranged on the display panel 2 so as to face each other. Below the display panel 2 .

其次,參照圖2對顯示裝置1之電路構成進行說明。如上所述,顯示區域DA中矩陣狀配置有複數個像素PX。複數個像素PX同樣地構成。因此,於圖2中,代表說明複數個像素PX中之1個像素PX。像素PX包含例如3個副像素(子像素)SPR、SPG及SPB。 Next, the circuit configuration of the display device 1 will be described with reference to FIG. 2 . As described above, a plurality of pixels PX are arranged in a matrix in the display area DA. A plurality of pixels PX are configured in the same manner. Therefore, in FIG. 2 , one pixel PX among the plurality of pixels PX is represented and illustrated. The pixel PX includes, for example, three sub-pixels (sub-pixels) SPR, SPG, and SPB.

副像素SPR、SPG及SPB同樣地構成。因此,此處為方便起見,主要對副像素SPB之構成(像素電路)進行說明。如圖2所示,副像素SPB包含發光元件10、驅動電晶體DRT、像素電晶體SST、初始化電晶體IST、保持電容Cs1及輔助電容Cs2。閘極驅動器GD包含重設電晶體RST。另,圖2所示之輸出電晶體BCT相對於副像素SPR、SPG及SPB配置1個。於圖2中,各電晶體為n通道型電晶體。又,圖2所示之元件電容Cled為發光元件10之陽極電極與陰極電極間之電容。另,重設電晶體RST、像素電晶體SST、初始化電晶體IST、及輸出電晶體BCT亦可不分別以電晶體構成。只要重設電晶體RST、像素電晶體SST、初始化電晶體IST、及輸出電晶體BCT係分別作為重設開關、像素開關、及輸出開關發揮功能者即可。Vrst線作為重設配線發揮功能,BG線、RG線、IG線、及SG線分別作為控制配線發揮功能。 The sub-pixels SPR, SPG, and SPB are configured in the same manner. Therefore, here, for the sake of convenience, the configuration (pixel circuit) of the sub-pixel SPB will be mainly described. As shown in FIG. 2 , the sub-pixel SPB includes a light-emitting element 10 , a driving transistor DRT, a pixel transistor SST, an initialization transistor IST, a holding capacitor Cs1 and a storage capacitor Cs2 . The gate driver GD includes a reset transistor RST. In addition, one output transistor BCT shown in FIG. 2 is arranged with respect to the sub-pixels SPR, SPG, and SPB. In FIG. 2, each transistor is an n-channel transistor. In addition, the element capacitance Cled shown in FIG. 2 is the capacitance between the anode electrode and the cathode electrode of the light-emitting element 10 . In addition, the reset transistor RST, the pixel transistor SST, the initialization transistor IST, and the output transistor BCT may not be constituted by transistors, respectively. The reset transistor RST, the pixel transistor SST, the initialization transistor IST, and the output transistor BCT may function as a reset switch, a pixel switch, and an output switch, respectively. The Vrst line functions as a reset line, and the BG line, the RG line, the IG line, and the SG line each function as a control line.

於以下之說明中,將電晶體之源極、汲極端子之一者設為第1端子,將另一者設為第2端子。又,將形成元件電容之一端子設為第1端子,將另一端子設為第2端子。 In the following description, one of the source and drain terminals of the transistor is referred to as the first terminal, and the other is referred to as the second terminal. Moreover, let one terminal which forms an element capacitance be a 1st terminal, and let the other terminal be a 2nd terminal.

驅動電晶體DRT之第1端子連接於元件電容Cled之第1端子、保持電容Cs1之第1端子及輔助電容Cs2之第1端子。驅動電晶體DRT之第2端子連接於輸出電晶體BCT之第1端子。又,驅動電晶體DRT之第2 端子經由Vrst線連接於重設電晶體RST之第1端子。 The first terminal of the driving transistor DRT is connected to the first terminal of the element capacitor Cled, the first terminal of the holding capacitor Cs1, and the first terminal of the auxiliary capacitor Cs2. The second terminal of the drive transistor DRT is connected to the first terminal of the output transistor BCT. Also, the second drive transistor DRT The terminal is connected to the first terminal of the reset transistor RST via the Vrst line.

輸出電晶體BCT之第2端子連接於第1主電源線21。又,元件電容Cled之第2端子連接於第2主電源線22。 The second terminal of the output transistor BCT is connected to the first main power supply line 21 . In addition, the second terminal of the element capacitor Cled is connected to the second main power supply line 22 .

像素電晶體SST之第1端子連接於驅動電晶體DRT之閘極端子、初始化電晶體IST之第1端子、及保持電容Cs1之第2端子。像素電晶體SST之第2端子連接於像素信號線23。 The first terminal of the pixel transistor SST is connected to the gate terminal of the drive transistor DRT, the first terminal of the initialization transistor IST, and the second terminal of the holding capacitor Cs1. The second terminal of the pixel transistor SST is connected to the pixel signal line 23 .

初始化電晶體IST之第2端子連接於初始化電源線24。輔助電容Cs2之第2端子連接於第1主電源線21。另,輔助電容Cs2之第2端子只要連接於恆定電位線即可,亦可連接於與第1主電源線21不同之配線。 The second terminal of the initialization transistor IST is connected to the initialization power supply line 24 . The second terminal of the auxiliary capacitor Cs2 is connected to the first main power supply line 21 . In addition, the second terminal of the auxiliary capacitor Cs2 may be connected to a constant potential line, and may be connected to a wiring different from the first main power supply line 21 .

此處,重設電晶體RST設置於在副像素SPB(像素PX)外配置之閘極驅動器GD,且該重設電晶體RST之第2端子連接於重設電源線25。 Here, the reset transistor RST is provided in the gate driver GD disposed outside the sub-pixel SPB (pixel PX), and the second terminal of the reset transistor RST is connected to the reset power supply line 25 .

此處,對第1主電源線21供給第1電源電位PVDD,對第2主電源線22供給第2電源電位PVSS。第1電源電位PVDD相當於用以對發光元件10供給陽極電壓之電壓,第2電源電位PVSS相當於發光元件10之陰極電壓。另,第2主電源線22亦可稱為共通電源配線(或簡稱為電源配線)。 Here, the first power supply potential PVDD is supplied to the first main power supply line 21 , and the second power supply potential PVSS is supplied to the second main power supply line 22 . The first power supply potential PVDD corresponds to a voltage for supplying an anode voltage to the light-emitting element 10 , and the second power supply potential PVSS corresponds to a cathode voltage of the light-emitting element 10 . In addition, the second main power supply line 22 may also be referred to as a common power supply wiring (or simply referred to as a power supply wiring).

又,對像素信號線23供給像素信號Vsig,對初始化電源線24供給初始化電壓Vini,重設電源線25設定為重設電源電位Vrst。另,像素信號Vsig係基於上述之影像信號寫入至像素(此處為副像素SPB)之信號。 Further, the pixel signal Vsig is supplied to the pixel signal line 23, the initialization voltage Vini is supplied to the initialization power supply line 24, and the reset power supply line 25 is set to the reset power supply potential Vrst. In addition, the pixel signal Vsig is a signal written to the pixel (here, the sub-pixel SPB) based on the above-mentioned image signal.

輸出電晶體BCT之閘極端子連接於BG線。對該BG線供給輸出控制信號BG。 The gate terminal of the output transistor BCT is connected to the BG line. The output control signal BG is supplied to the BG line.

像素電晶體SST之閘極端子連接於SG線。對該SG線供給像素控制信號SG。 The gate terminal of the pixel transistor SST is connected to the SG line. The pixel control signal SG is supplied to the SG line.

初始化電晶體IST之閘極端子連接於IG線。對該IG線供給初始化控制信號IG。 The gate terminal of the initialization transistor IST is connected to the IG line. An initialization control signal IG is supplied to the IG line.

重設電晶體RST之閘極端子連接於RG線。對該RG線供給重設控制信號RG。 The gate terminal of the reset transistor RST is connected to the RG line. A reset control signal RG is supplied to the RG line.

於圖2中,已說明上述之電晶體皆為n通道型電晶體者,但例如驅動電晶體DRT以外之電晶體可為p通道型電晶體,亦可使n通道型電晶體及p通道型電晶體混存。 In FIG. 2, it has been explained that the above transistors are all n-channel transistors, but for example, transistors other than the driving transistor DRT can be p-channel transistors, and n-channel transistors and p-channel transistors can also be used. Mixed transistors.

又,顯示裝置1只要具備至少1個閘極驅動器GD即可。於本實施形態中,雖未圖示,但顯示裝置1具備2個閘極驅動器GD。閘極驅動器GD不僅設置於圖2所提之像素PX之左側,亦設置於像素PX之右側。因此,可自兩側之閘極驅動器GD對1個像素PX賦予信號。此處,對上述之SG線採用兩側供電方式,對其他BG線、IG線、Vrst線等採用單側供電方式。 In addition, the display device 1 only needs to include at least one gate driver GD. In the present embodiment, although not shown, the display device 1 includes two gate drivers GD. The gate driver GD is not only disposed on the left side of the pixel PX mentioned in FIG. 2 , but also on the right side of the pixel PX. Therefore, a signal can be given to one pixel PX from the gate drivers GD on both sides. Here, the two-side power supply method is used for the above-mentioned SG line, and the one-side power supply method is used for the other BG lines, IG lines, and Vrst lines.

此處,已對副像素SPB之構成進行說明,但關於副像素SPR及SPG亦同樣。 Here, the configuration of the sub-pixel SPB has been described, but the same applies to the sub-pixel SPR and SPG.

另,圖2中說明之電路構成為一例,只要為至少包含驅動電晶體DRT者,則顯示裝置1之電路構成亦可為其他構成。例如,可省略圖2中說明之電路構成中之一部分,亦可追加其他構成。 The circuit configuration described in FIG. 2 is an example, and the circuit configuration of the display device 1 may be other configurations as long as it includes at least the driving transistor DRT. For example, a part of the circuit configuration described in FIG. 2 may be omitted, and other configurations may be added.

圖3係模式性顯示顯示裝置1之剖面構造者。此處,對將上述之稱為微型LED之微小發光二極體元件作為顯示元件安裝於基板上之例進行說明。另,於圖3中,針對包含構成像素之TFT(Thin Film Transistor:薄膜電晶體)之顯示區域DA予以顯示。 FIG. 3 schematically shows a cross-sectional structure of the display device 1 . Here, an example in which the above-mentioned minute light-emitting diode elements called micro LEDs are mounted on a substrate as a display element will be described. In addition, in FIG. 3, for the TFT (Thin Film Transistor: thin film transistor) display area DA is displayed.

圖3所示之顯示面板2之陣列基板AR具備絕緣基板31。作為絕緣基板31,只要為可耐TFT步驟中之處理溫度者,則材質不拘,但主要可使用石英、無鹼玻璃等之玻璃基板、或聚醯亞胺等之樹脂基板。樹脂基板具有可撓性,且可構成顯示裝置1作為薄片顯示器。另,作為樹脂基板,不限於聚醯亞胺,亦可使用其他樹脂材料。由上所述,可能存在將絕緣基板31稱為有機絕緣層、或樹脂層較為適當之情形。 The array substrate AR of the display panel 2 shown in FIG. 3 includes an insulating substrate 31 . The insulating substrate 31 can be made of any material as long as it can withstand the processing temperature in the TFT step, but mainly a glass substrate such as quartz and alkali-free glass, or a resin substrate such as polyimide can be used. The resin substrate has flexibility, and can constitute the display device 1 as a sheet display. In addition, as a resin substrate, it is not limited to polyimide, and other resin materials can also be used. From the above, it may be appropriate to call the insulating substrate 31 an organic insulating layer or a resin layer.

於絕緣基板31上,設置有三層積層構造之底塗層32。雖省略詳細之圖示,但底塗層32具有以氧化矽(SiO2)形成之下層、以氮化矽(SiN)形成之中層、及以氧化矽(SiO2)形成之上層。底塗層32之下層係為了提高與基材即絕緣基板31之密接性而設置,中層係作為阻擋來自外部之水分及雜質之阻擋膜而設置,上層係作為避免中層所含之氫原子擴散至後述之半導體層SC側之阻擋膜而設置。另,底塗層32可進一步積層,亦可為單層構造或雙層構造。例如,於絕緣基板31為玻璃之情形時,因氮化矽膜之密接性較佳,故可於該絕緣基板31上直接形成氮化矽膜。 On the insulating substrate 31, an undercoat layer 32 having a three-layer laminate structure is provided. Although detailed illustration is omitted, the undercoat layer 32 has a lower layer formed of silicon oxide (SiO 2 ), a middle layer formed of silicon nitride (SiN), and an upper layer formed of silicon oxide (SiO 2 ). The lower layer of the primer layer 32 is provided to improve the adhesion with the base material, that is, the insulating substrate 31, the middle layer is provided as a barrier film for blocking moisture and impurities from the outside, and the upper layer is provided to prevent the hydrogen atoms contained in the middle layer from diffusing to the surface. A barrier film on the side of the semiconductor layer SC, which will be described later, is provided. In addition, the primer layer 32 may be further laminated, and may have a single-layer structure or a double-layer structure. For example, when the insulating substrate 31 is glass, the silicon nitride film can be directly formed on the insulating substrate 31 because the adhesion of the silicon nitride film is better.

於絕緣基板31之上,配置有遮光層(未圖示)。遮光層之位置對準後續形成TFT之部位。遮光層由金屬層或黑色層等具有遮光性之材料形成即可。藉由遮光層,由於可抑制光侵入至TFT之通道背面,故能抑制可能自絕緣基板31側入射之光所引起之TFT特性變化。另,於以導電層形成遮光層之情形時,可藉由對該遮光層賦予特定之電位,而對TFT賦予背閘極效應。 On the insulating substrate 31, a light shielding layer (not shown) is arranged. The position of the light shielding layer is aligned with the part where the TFT is subsequently formed. The light-shielding layer may be formed of a material having light-shielding properties such as a metal layer or a black layer. By the light shielding layer, since the intrusion of light into the back surface of the channel of the TFT can be suppressed, it is possible to suppress the change of the TFT characteristics which may be caused by the light incident from the insulating substrate 31 side. In addition, when the light shielding layer is formed by a conductive layer, a back gate effect can be imparted to the TFT by applying a specific potential to the light shielding layer.

於上述之底塗層32之上形成TFT(例如驅動電晶體DRT)。作為TFT,以對半導體層SC使用多晶矽之多晶矽TFT為例。於本實施形態 中,使用低溫多晶矽形成半導體層SC。TFT可使用NchTFT、PchTFT之任一者。或,亦可同時形成NchTFT與PchTFT。以下,說明作為驅動電晶體DRT,使用NchTFT之例。NchTFT之半導體層SC具有第1區域、第2區域、第1區域及第2區域間之通道區域、及分別設置於通道區域及第1區域之間以及通道區域及第2區域之間之低濃度雜質區域。第1及第2區域之一者作為源極區域發揮功能,第1及第2區域之另一者作為汲極區域發揮功能。閘極絕緣膜GI使用氧化矽膜,且閘極電極GE以MoW(鉬、鎢)形成。另,閘極電極GE等形成於閘極絕緣膜GI之上之電極亦可稱為1st配線、或1st金屬。閘極電極GE除作為TFT之閘極電極之功能外,亦具有作為稍後敘述之保持電容電極之功能。此處,雖以頂閘極型之TFT為了進行說明,但TFT亦可為底閘極型之TFT。 A TFT (eg, a driving transistor DRT) is formed on the above-mentioned undercoat layer 32 . As the TFT, a polysilicon TFT using polysilicon for the semiconductor layer SC is taken as an example. in this embodiment In the above, the semiconductor layer SC is formed using low temperature polysilicon. As the TFT, either NchTFT or PchTFT can be used. Alternatively, NchTFT and PchTFT may be formed simultaneously. Hereinafter, an example in which an NchTFT is used as the driving transistor DRT will be described. The semiconductor layer SC of the NchTFT has a first region, a second region, a channel region between the first region and the second region, and low concentrations respectively provided between the channel region and the first region and between the channel region and the second region impurity region. One of the first and second regions functions as a source region, and the other of the first and second regions functions as a drain region. The gate insulating film GI uses a silicon oxide film, and the gate electrode GE is formed of MoW (molybdenum, tungsten). In addition, the electrode formed on the gate insulating film GI, such as the gate electrode GE, may also be called a 1st wiring or a 1st metal. In addition to the function of the gate electrode of the TFT, the gate electrode GE also has a function of a holding capacitor electrode which will be described later. Here, although a top-gate type TFT is used for description, the TFT may be a bottom-gate type TFT.

於閘極絕緣膜GI及閘極電極GE之上,設置有層間絕緣膜33。層間絕緣膜33於閘極絕緣膜GI及閘極電極GE之上,依序積層例如氮化矽膜及氧化矽膜而構成。 An interlayer insulating film 33 is provided on the gate insulating film GI and the gate electrode GE. The interlayer insulating film 33 is formed by sequentially laminating, for example, a silicon nitride film and a silicon oxide film on the gate insulating film GI and the gate electrode GE.

於層間絕緣膜33之上,設置有TFT之第1電極E1及第2電極E2。又,於層間絕緣膜33之上,設置有共通電源配線22。第1電極E1、第2電極E2、及共通電源配線22分別採用三層積層構造(Ti系/Al系/Ti系),且具有:下層,其包含Ti(鈦)、含Ti之合金等以Ti為主成分之金屬材料;中層,其包含Al(鋁)、含Al之合金等以Al為主成分之金屬材料;及上層,其包含Ti、含Ti之合金等以Ti為主成分之金屬材料。另,第1電極E1等形成於層間絕緣膜33之上之電極亦可稱為2nd配線、或2nd金屬。第1電極E1連接於半導體層SC之第1區域,第2電極E2連接於半導體層SC之第2區域。例如,於半導體層SC之第1區域作為源極區域發揮功能之情形時,第1電 極E1為源極電極,第2電極E2為汲極電極。第1電極E1、層間絕緣膜33、及TFT之閘極電極(保持電容電極)GE一起形成保持電容Cs1。 On the interlayer insulating film 33, the first electrode E1 and the second electrode E2 of the TFT are provided. In addition, on the interlayer insulating film 33, the common power supply wiring 22 is provided. The first electrode E1, the second electrode E2, and the common power supply wiring 22 each have a three-layer structure (Ti-based/Al-based/Ti-based), and have a lower layer including Ti (titanium), an alloy containing Ti, and the like. A metal material with Ti as its main component; a middle layer, which contains Al (aluminum), an alloy containing Al, and other metal materials whose main component is Al; and an upper layer, which contains Ti, an alloy containing Ti, and other metals whose main component is Ti Material. In addition, the electrode formed on the interlayer insulating film 33, such as the 1st electrode E1, may also be called 2nd wiring, or 2nd metal. The first electrode E1 is connected to the first region of the semiconductor layer SC, and the second electrode E2 is connected to the second region of the semiconductor layer SC. For example, when the first region of the semiconductor layer SC functions as a source region, the first electrical The electrode E1 is a source electrode, and the second electrode E2 is a drain electrode. The first electrode E1, the interlayer insulating film 33, and the gate electrode (holding capacitor electrode) GE of the TFT together form a holding capacitor Cs1.

以覆蓋TFT及共通電源配線22之方式將平坦化膜34形成於層間絕緣膜33、第1電極E1、第2電極E2、及共通電源配線22之上。作為平坦化膜34,多使用感光性丙烯酸等之有機絕緣材料。與藉由CVD(Chemical Vapor Deposition:化學氣相沈積)等形成之無機絕緣材料相比,配線階差之覆蓋性或表面之平坦性優異。 The planarizing film 34 is formed on the interlayer insulating film 33 , the first electrode E1 , the second electrode E2 , and the common power supply wiring 22 so as to cover the TFT and the common power supply wiring 22 . As the planarizing film 34, an organic insulating material such as photosensitive acrylic is often used. Compared with inorganic insulating materials formed by CVD (Chemical Vapor Deposition) or the like, the coverage of wiring steps and the flatness of the surface are excellent.

於平坦化膜34之上,設置有導電層35。雖稍後敘述,但導電層35不形成於TFT之第1電極E1與像素電極37(陽極電極)接觸之區域,於該區域具有開口部。於導電層35之上,設置有絕緣層36。例如,絕緣層36以氮化矽膜形成。於絕緣層36之上,設置有像素電極37。像素電極37經由形成於平坦化膜34及絕緣層36之開口部與TFT之第1電極E1接觸。據此,像素電極37經由該開口部,與TFT之第1電極E1電性連接。導電層35及像素電極37皆由氧化銦錫(ITO)或氧化銦鋅(IZO)等之透明導電材料形成。 On the planarizing film 34, a conductive layer 35 is provided. Although described later, the conductive layer 35 is not formed in the region where the first electrode E1 of the TFT is in contact with the pixel electrode 37 (anode electrode), and has an opening in this region. On the conductive layer 35, an insulating layer 36 is provided. For example, the insulating layer 36 is formed of a silicon nitride film. On the insulating layer 36, a pixel electrode 37 is disposed. The pixel electrode 37 is in contact with the first electrode E1 of the TFT through the opening formed in the planarizing film 34 and the insulating layer 36 . Accordingly, the pixel electrode 37 is electrically connected to the first electrode E1 of the TFT through the opening. The conductive layer 35 and the pixel electrode 37 are both formed of transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO).

另,亦可將上述之TFT及像素電極37統稱為陽極配線。 In addition, the above-mentioned TFT and the pixel electrode 37 may be collectively referred to as an anode wiring.

導電層35經由形成於平坦化膜34之開口部接觸於共通電源配線22。於導電層35與共通電源配線22接觸之區域中,於該導電層35之上,設置有共通電極38(陰極電極)。據此,共通電極38經由導電層35與共通電源配線22電性連接。共通電極38與導電層35及像素電極37同樣,由例如ITO或IZO等之透明導電材料形成。 The conductive layer 35 is in contact with the common power supply wiring 22 through the opening formed in the planarization film 34 . In a region where the conductive layer 35 is in contact with the common power supply wiring 22 , a common electrode 38 (cathode electrode) is provided on the conductive layer 35 . Accordingly, the common electrode 38 is electrically connected to the common power supply wiring 22 via the conductive layer 35 . The common electrode 38 is formed of a transparent conductive material such as ITO or IZO, like the conductive layer 35 and the pixel electrode 37 .

另,亦可將共通電源配線22、導電層35及共通電極38統稱為陰極配線。 In addition, the common power supply wiring 22, the conductive layer 35, and the common electrode 38 may be collectively referred to as a cathode wiring.

再者,像素電極37及共通電極38不限定於由透明導電材料形成者,亦可為由Al(鋁)、Ti(鈦)、Mo(鉬)、W(鎢)等遮光性之金屬材料及該等金屬材料之積層構造形成者。 Furthermore, the pixel electrode 37 and the common electrode 38 are not limited to those formed of transparent conductive materials, and may also be made of light-shielding metal materials such as Al (aluminum), Ti (titanium), Mo (molybdenum), and W (tungsten). Formed by a layered structure of these metal materials.

於絕緣層36、像素電極37及共通電極38之上設置有平坦化膜39。平坦化膜39由感光性丙烯酸等之有機絕緣材料形成。平坦化膜39具有用以電性連接像素電極37及第1中繼電極40(陽極中繼電極)之開口部、與用以電性連接共通電極38及第2中繼電極41(陰極中繼電極)之開口部。 A planarization film 39 is provided on the insulating layer 36 , the pixel electrode 37 and the common electrode 38 . The planarizing film 39 is formed of an organic insulating material such as photosensitive acrylic. The planarizing film 39 has an opening for electrically connecting the pixel electrode 37 and the first relay electrode 40 (anode relay electrode), and an opening for electrically connecting the common electrode 38 and the second relay electrode 41 (cathode relay electrode) electrode) openings.

於顯示裝置1,如上所述,設置有2個平坦化膜34及39。平坦化膜34及39與由無機絕緣材料形成之絕緣層相比,具有沿第3方向Z之厚度(膜厚),因此,與該等平坦化膜34及39中之至少一者為由無機絕緣材料形成之絕緣層之情形相比,可獲得緩衝性優異之優點。 In the display device 1, as described above, the two planarizing films 34 and 39 are provided. The planarizing films 34 and 39 have a thickness (film thickness) along the third direction Z compared with the insulating layer formed of an inorganic insulating material, and therefore, at least one of the planarizing films 34 and 39 is made of an inorganic insulating material. Compared with the case of an insulating layer formed of an insulating material, an advantage of excellent buffering properties can be obtained.

於顯示區域DA中,安裝有發光元件10。於圖3中,雖僅圖示1個發光元件10,但實際上設置具有R、G、B之發光色之發光元件10。發光元件10與第1中繼電極40藉由陽極端子AN電性連接。陽極端子AN為連接構件,例如焊料。 In the display area DA, the light-emitting element 10 is mounted. In FIG. 3, although only one light-emitting element 10 is shown, the light-emitting element 10 having the emission colors of R, G, and B is actually provided. The light-emitting element 10 and the first relay electrode 40 are electrically connected through the anode terminal AN. The anode terminal AN is a connecting member such as solder.

發光元件10於與配置於底部之陽極端子AN相反側之出射面之兩端部與陰極端子CA接觸。更詳細而言,發光元件10與陰極端子CA於例如出射面之端部1μm處重疊並接觸。期望陰極端子CA由例如鈦(Ti)、或經黑化處理之金屬等金屬材料形成。據此,可期待提高較亮場所之顯示裝置1之對比度。 The light-emitting element 10 is in contact with the cathode terminal CA at both ends of the output surface opposite to the anode terminal AN arranged at the bottom. More specifically, the light-emitting element 10 and the cathode terminal CA are overlapped and contacted, for example, at an end portion of 1 μm of the output surface. It is desirable that the cathode terminal CA is formed of a metal material such as titanium (Ti), or blackened metal. Accordingly, it can be expected to improve the contrast ratio of the display device 1 in a bright place.

陰極端子CA經由形成於稍後敘述之元件絕緣層43之開口部,與第2中繼電極41接觸。即,與陰極端子CA電性連接之第2中繼電極 41與陽極端子AN(及與該陽極端子AN電性連接之第1中繼電極40)配置於同一層。 The cathode terminal CA is in contact with the second relay electrode 41 through an opening formed in the element insulating layer 43 to be described later. That is, the second relay electrode electrically connected to the cathode terminal CA 41 is arranged on the same layer as the anode terminal AN (and the first relay electrode 40 electrically connected to the anode terminal AN).

以覆蓋陰極端子CA、及發光元件10之出射面中未與陰極端子CA重疊之部分之方式,設置透明導電層42。作為透明導電層42,可使用ITO或IZO等之透明導電材料。如此,藉由設置於發光元件10之出射面中未與陰極端子CA重疊之部分之導電層為透明導電層42,而可自發光元件10提取光。另,於本實施形態中,因透明導電層42基本上不作為陰極端子發揮功能,故亦可省略該透明導電層42。另一方面,藉由設置透明導電層42,可期待提高冗餘性。又,雖稍後敘述,但透明導電層42亦可於陰極端子CA、與自相鄰之副像素延伸之陰極端子CA交叉之部分,如圖3所示成為凹狀,而具有與其他部分不同之厚度。 The transparent conductive layer 42 is provided so as to cover the cathode terminal CA and a portion of the emission surface of the light-emitting element 10 that does not overlap with the cathode terminal CA. As the transparent conductive layer 42, a transparent conductive material such as ITO or IZO can be used. In this way, light can be extracted from the light-emitting element 10 by providing the transparent conductive layer 42 as the conductive layer provided on the portion of the light-emitting element 10 that does not overlap with the cathode terminal CA. In addition, in this embodiment, since the transparent conductive layer 42 basically does not function as a cathode terminal, the transparent conductive layer 42 may be omitted. On the other hand, by providing the transparent conductive layer 42, the redundancy can be expected to be improved. In addition, although it will be described later, the transparent conductive layer 42 may have a concave shape at the part where the cathode terminal CA and the cathode terminal CA extending from the adjacent sub-pixels intersect with the cathode terminal CA as shown in FIG. thickness.

於平坦化膜39、陰極端子CA及透明導電層42之間,設置有元件絕緣層43。元件絕緣層43由填充於發光元件10間之空隙部之樹脂材料形成。 An element insulating layer 43 is provided between the planarizing film 39 , the cathode terminal CA, and the transparent conductive layer 42 . The element insulating layer 43 is formed of a resin material filled in the space between the light emitting elements 10 .

於透明導電層42之上,設置有平坦化膜44,且於該平坦化膜44之上,設置有偏光板45。平坦化膜44由感光性丙烯酸等之有機絕緣材料形成。偏光板45藉由未圖示之接著層接著於平坦化膜44之上。 A planarization film 44 is provided on the transparent conductive layer 42 , and a polarizer 45 is provided on the planarization film 44 . The planarizing film 44 is formed of an organic insulating material such as photosensitive acrylic. The polarizing plate 45 is bonded on the planarizing film 44 by an adhesive layer not shown.

圖4係用以說明形成於本實施形態之像素PX(副像素SPR、SPG及SPB)之複數個開口部(接觸部)之位置之俯視圖。另,於圖4中,為防止圖式變繁雜而僅記載必要之要素,省略一部分要素之圖示。 4 is a plan view for explaining positions of a plurality of openings (contacts) formed in the pixel PX (sub-pixels SPR, SPG, and SPB) of the present embodiment. In addition, in FIG. 4, in order to prevent drawing complexity, only necessary elements are described, and illustration of some elements is abbreviate|omitted.

如圖4所示,包含副像素SPR、SPG及SPB之像素PX共用單個導電層35。換言之,導電層35以跨越複數個副像素SPR、SPG及SPB連續延伸之方式形成。 As shown in FIG. 4 , the pixels PX including the sub-pixels SPR, SPG and SPB share a single conductive layer 35 . In other words, the conductive layer 35 is formed to continuously extend across the plurality of sub-pixels SPR, SPG and SPB.

以下之說明中,於符號之末尾進而標註R對副像素SPR所含之要素進行說明。又,於符號之末尾進而標註G對副像素SPG所含之要素進行說明。再者,於符號之末尾進而標註B對副像素SPB所含之要素進行說明。 In the following description, R is added at the end of the symbol to describe the elements included in the sub-pixel SPR. In addition, G is added to the end of the symbol to describe the elements included in the sub-pixel SPG. Furthermore, B is further marked at the end of the symbol to describe the elements included in the sub-pixel SPB.

如圖4所示,於像素PX所含之副像素SPR、SPG及SPB各自形成有開口部CH1~CH4。又,如圖4所示,於各像素PX,形成有開口部CH5及CH6。 As shown in FIG. 4 , openings CH1 to CH4 are formed in each of the sub-pixels SPR, SPG, and SPB included in the pixel PX. Moreover, as shown in FIG. 4, opening parts CH5 and CH6 are formed in each pixel PX.

開口部CH1R為使像素電極37R、與第1電極E1R於稍後敘述之開口部CH2R中接觸,而相當於未形成導電層35之區域。又,開口部CH1G為使像素電極37G、與第1電極E1G於稍後敘述之開口部CH2G中接觸,而相當於未形成導電層35之區域。再者,開口部CH1B為使像素電極37B、與第1電極E1B於稍後敘述之開口部CH2B中接觸,而相當於未形成導電層35之區域。 The opening portion CH1R corresponds to a region where the conductive layer 35 is not formed so that the pixel electrode 37R and the first electrode E1R are in contact with the opening portion CH2R described later. In addition, the opening portion CH1G corresponds to a region where the conductive layer 35 is not formed so that the pixel electrode 37G and the first electrode E1G are brought into contact with the opening portion CH2G described later. In addition, the opening portion CH1B corresponds to a region where the conductive layer 35 is not formed so that the pixel electrode 37B and the first electrode E1B are in contact with the opening portion CH2B described later.

開口部CH2R係為使像素電極37R、與第1電極E1R接觸,而形成於平坦化膜34及絕緣層36之開口部。又,開口部CH2G係為使像素電極37G、與第1電極E1G接觸,而形成於平坦化膜34及絕緣層36之開口部。再者,開口部CH2B係為使像素電極37B、與第1電極E1B接觸,而形成於平坦化膜34及絕緣層36之開口部。 The opening portion CH2R is formed in the opening portion of the planarizing film 34 and the insulating layer 36 so that the pixel electrode 37R is in contact with the first electrode E1R. In addition, the opening portion CH2G is formed in the opening portion of the planarizing film 34 and the insulating layer 36 so that the pixel electrode 37G and the first electrode E1G are in contact with each other. In addition, the opening part CH2B is formed in the opening part of the planarization film 34 and the insulating layer 36 so that the pixel electrode 37B and the 1st electrode E1B may contact.

如圖4所示,開口部CH1R形成為大於開口部CH2R,開口部CH1R與開口部CH2R於俯視下重疊。同樣,開口部CH1G形成為大於開口部CH2G,開口部CH1G與開口部CH2G於俯視下重疊。又,開口部CH1B形成為大於開口部CH2B,開口部CH1B與開口部CH2B於俯視下重疊。 As shown in FIG. 4, the opening part CH1R is formed larger than the opening part CH2R, and the opening part CH1R and the opening part CH2R overlap in plan view. Similarly, the opening portion CH1G is formed larger than the opening portion CH2G, and the opening portion CH1G and the opening portion CH2G overlap in a plan view. Moreover, the opening part CH1B is formed larger than the opening part CH2B, and the opening part CH1B and the opening part CH2B overlap in plan view.

又,如圖4所示,開口部CH1R及CH2R、開口部CH1G及CH2G、及開口部CH1B及CH2B沿第1方向X大致直線狀排列配置。 Furthermore, as shown in FIG. 4 , the openings CH1R and CH2R, the openings CH1G and CH2G, and the openings CH1B and CH2B are arranged in a line along the first direction X substantially linearly.

開口部CH3R係為使導電層35與共通電源配線22接觸,而形成於平坦化膜34之開口部。又,開口部CH3G係為使導電層35、與共通電源配線22接觸,而形成於平坦化膜34之開口部。再者,開口部CH3B係為使導電層35與共通電源配線22接觸,而形成於平坦化膜34之開口部。 The opening portion CH3R is formed in the opening portion of the planarizing film 34 so that the conductive layer 35 is in contact with the common power supply wiring 22 . Moreover, the opening part CH3G is formed in the opening part of the planarizing film 34 so that the conductive layer 35 and the common power supply wiring 22 may contact. In addition, the opening part CH3B is formed in the opening part of the planarizing film 34 so that the conductive layer 35 and the common power supply wiring 22 may contact.

如圖4所示,開口部CH3R、CH3G及CH3B沿第1方向X大致直線狀排列配置。 As shown in FIG. 4 , the openings CH3R, CH3G, and CH3B are arranged in a row along the first direction X substantially linearly.

又,如圖4所示,開口部CH1R及CH2R與開口部CH3R沿第2方向Y大致直線狀排列配置。同樣地,開口部CH1G及CH2G與開口部CH3G沿第2方向Y大致直線狀排列配置,且開口部CH1B及CH2B與開口部CH3B沿第2方向Y大致直線狀排列配置。 Furthermore, as shown in FIG. 4 , the openings CH1R and CH2R and the opening CH3R are arranged in a row along the second direction Y substantially linearly. Similarly, the openings CH1G and CH2G and the opening CH3G are arranged substantially linearly along the second direction Y, and the openings CH1B and CH2B and the opening CH3B are arranged substantially linearly arranged along the second direction Y.

開口部CH4R係為使像素電極37R與第1中繼電極40R接觸,而形成於平坦化膜39之開口部。又,開口部CH4G係為使像素電極37G與第1中繼電極40G接觸,而形成於平坦化膜39之開口部。開口部CH4B係為使像素電極37B與第1中繼電極40B接觸,而形成於平坦化膜39之開口部。 The opening portion CH4R is formed in the opening portion of the planarizing film 39 in order to bring the pixel electrode 37R into contact with the first relay electrode 40R. Moreover, the opening part CH4G is formed in the opening part of the planarization film 39 so that the pixel electrode 37G and the 1st relay electrode 40G may contact. The opening portion CH4B is formed in the opening portion of the planarizing film 39 so that the pixel electrode 37B and the first relay electrode 40B are brought into contact with each other.

另,於圖4所示之例中,開口部CH4R、CH4G及CH4B中之至少1者形成為非成1條直線狀地排列配置。具體而言,開口部CH4R及CH4B以沿第1方向X延伸之直線狀排列配置,但開口部CH4G未以沿該第1方向X延伸之直線狀排列配置。又,雖開口部CH4G及CH4B以沿第2方向Y延伸之直線狀排列配置,但開口部CH4R未以沿該第2方向Y延伸之直線狀排列配置。 In the example shown in FIG. 4 , at least one of the openings CH4R, CH4G, and CH4B is formed so as to be arranged in a non-linear arrangement. Specifically, the openings CH4R and CH4B are arranged in a line extending in the first direction X, but the openings CH4G are not arranged in a line extending in the first direction X. In addition, although the openings CH4G and CH4B are arranged in a line extending in the second direction Y, the openings CH4R are not arranged in a line extending in the second direction Y.

開口部CH5係為使共通電極38與第2中繼電極41接觸,而形成於平坦化膜39之開口部。又,開口部CH6係為使第2中繼電極41與陰極端子CA接觸,而形成於元件絕緣層43之開口部。另,開口部CH5及CH6如圖4所示,於俯視下局部重疊,但開口部CH5及CH6可於俯視下未重疊,亦可完全重疊。 The opening portion CH5 is formed in the opening portion of the planarizing film 39 so that the common electrode 38 and the second relay electrode 41 are brought into contact with each other. Moreover, the opening part CH6 is formed in the opening part of the element insulating layer 43 so that the 2nd relay electrode 41 may contact with the cathode terminal CA. In addition, as shown in FIG. 4 , the openings CH5 and CH6 partially overlap in a plan view, but the openings CH5 and CH6 may not overlap in a plan view, or may completely overlap.

如圖4所示,於像素PX之形狀為矩形,且副像素SPR、SPG及SPB三角形狀地配置於與該矩形之4個頂點中之3個頂點對應之位置之情形時,期望開口部CH5及CH6形成於與剩下之1個頂點對應之位置。 As shown in FIG. 4 , when the shape of the pixel PX is a rectangle, and the sub-pixels SPR, SPG, and SPB are arranged in a triangular shape at positions corresponding to three of the four vertices of the rectangle, the opening CH5 is desired. And CH6 is formed at the position corresponding to the remaining 1 vertex.

此處,參照圖5,對設置於像素PX之陰極端子CA之佈局進行說明。於圖5中,例示陰極端子CA主要沿第1方向X延伸配置之佈局。另,陰極端子CA之寬度或厚度設定為與為使發光元件10發光所需之電力對應之值,可設定為例如寬度10μm及厚度50nm。 Here, the layout of the cathode terminal CA provided in the pixel PX will be described with reference to FIG. 5 . In FIG. 5, the layout in which the cathode terminal CA is mainly extended along the 1st direction X is illustrated. In addition, the width or thickness of the cathode terminal CA is set to a value corresponding to the electric power required for the light-emitting element 10 to emit light, and can be set to, for example, a width of 10 μm and a thickness of 50 nm.

具體而言,陰極端子CA如下般沿第1方向X延伸:連接綠色發光元件10G之出射面之端部(矩形狀出射面之沿第2方向Y延伸之邊)、與沿第1方向X排列配置之另一像素PX所含之綠色發光元件10G之出射面的端部(矩形狀出射面之沿第2方向Y延伸之邊)。換言之,陰極端子CA以分別連接發光元件10G之出射面之兩端部、與第1方向X上相鄰之另一像素PX所含之發光元件10G之出射面之端部之方式沿第1方向X延伸。 Specifically, the cathode terminal CA extends in the first direction X as follows: connecting the end of the emission surface of the green light-emitting element 10G (the side of the rectangular emission surface extending in the second direction Y), and being arranged in the first direction X The end of the output surface of the green light-emitting element 10G included in the other arranged pixel PX (the side of the rectangular output surface extending in the second direction Y). In other words, the cathode terminal CA is along the first direction so as to connect the two ends of the light-emitting element 10G's light-emitting surface and the end of the light-emitting element 10G's light-emitting surface included in another pixel PX adjacent in the first direction X, respectively. X extension.

又,陰極端子CA如下般沿第1方向X延伸:連接紅色發光元件10R之出射面之一端部(矩形狀出射面之沿第2方向Y延伸之兩邊中之接近同一像素PX內之藍色發光元件10B之邊)、與藍色發光元件10B之出射面的一端部(矩形狀出射面之沿第2方向Y延伸之兩邊中之接近同一像素PX內之紅色發光元件10R之邊)。再者,陰極端子CA如下般沿第1方向X 延伸:連接發光元件10R之出射面之另一端部(矩形狀出射面之沿第2方向Y延伸之兩邊中之遠離同一像素PX內之發光元件10B之邊)、與沿第1方向X排列配置之另一像素PX所含之藍色發光元件10B之出射面的端部(矩形狀出射面之沿第2方向Y延伸之邊)。又,陰極端子CA如下般沿第1方向X延伸:連接發光元件10B之出射面之另一端部(矩形狀出射面之沿第2方向Y延伸之兩邊中之遠離同一像素PX內之發光元件10R之邊)、與沿第1方向X排列配置之另一像素PX所含之紅色發光元件10R之出射面的端部(矩形狀出射面之沿第2方向Y延伸之邊)。 In addition, the cathode terminal CA extends in the first direction X so as to connect one end of the emission surface of the red light-emitting element 10R (the two sides of the rectangular emission surface extending in the second direction Y are close to the blue emission in the same pixel PX). element 10B), and one end of the light-emitting surface of the blue light-emitting element 10B (one of the two sides of the rectangular light-emitting surface extending along the second direction Y is close to the red light-emitting element 10R in the same pixel PX). In addition, the cathode terminal CA is along the first direction X as follows Extension: connecting the other end of the emitting surface of the light-emitting element 10R (the side of the two sides of the rectangular emitting surface extending along the second direction Y away from the light-emitting element 10B in the same pixel PX), and arranged along the first direction X The end of the emission surface of the blue light-emitting element 10B included in the other pixel PX (the side of the rectangular emission surface extending along the second direction Y). In addition, the cathode terminal CA extends in the first direction X so as to connect the other end of the emission surface of the light-emitting element 10B (out of the two sides of the rectangular emission surface extending in the second direction Y away from the light-emitting element 10R in the same pixel PX) side), and the end of the output surface of the red light-emitting element 10R included in the other pixel PX arranged along the first direction X (the side of the rectangular output surface extending along the second direction Y).

再者,陰極端子CA如下般沿第2方向Y延伸:連接發光元件10B之出射面之端部(矩形狀出射面之沿第1方向X延伸之邊)、與沿第2方向Y排列配置之另一像素PX所含之藍色發光元件10B之出射面的端部(矩形狀出射面之沿第1方向X延伸之邊)。換言之,陰極端子CA以分別連接發光元件10B之出射面之兩端部、與第2方向Y上相鄰之另一像素PX所含之發光元件10B之出射面之端部之方式沿第2方向Y延伸。 In addition, the cathode terminal CA extends in the second direction Y as follows: connecting the end of the light-emitting element 10B's light-emitting surface (the side of the rectangular light-emitting surface extending in the first direction X), and the end of the light-emitting element 10B extending in the first direction The end of the emission surface of the blue light-emitting element 10B included in the other pixel PX (the side of the rectangular emission surface extending along the first direction X). In other words, the cathode terminal CA is along the second direction so as to connect the two ends of the light-emitting element 10B's light-emitting surface and the end of the light-emitting element 10B's light-emitting surface included in another pixel PX adjacent in the second direction Y, respectively. Y extension.

另,自綠色發光元件10G對第1方向X上相鄰之另一像素PX延伸之陰極端子CA、與自藍色發光元件10B對第2方向Y上相鄰之另一像素PX延伸之陰極端子CA於俯視下,在形成有開口部CH6之區域交叉。 In addition, a cathode terminal CA extending from the green light-emitting element 10G to another pixel PX adjacent in the first direction X, and a cathode terminal extending from the blue light-emitting element 10B to another pixel PX adjacent to the second direction Y CA crosses in the area|region in which the opening part CH6 is formed in plan view.

如圖5所示,於陰極端子CA主要沿第1方向X延伸配置之情形時,雖因陰極端子CA之配置導致來自第1方向X之光之提取效率稍微下降,但可獲得能提高來自第2方向Y之光之提取效率之優點。 As shown in FIG. 5 , when the cathode terminals CA are mainly arranged to extend along the first direction X, although the extraction efficiency of the light from the first direction X is slightly reduced due to the arrangement of the cathode terminals CA, it is possible to obtain an increase in the light extraction efficiency from the first direction X. The advantage of the extraction efficiency of light in 2 directions Y.

其次,參照圖6,對設置於像素PX之陰極端子CA之另一佈局進行說明。圖6與圖5之情形不同,例示陰極端子CA主要沿第2方向Y延伸配置之佈局。 Next, another layout of the cathode terminals CA provided in the pixels PX will be described with reference to FIG. 6 . Unlike the case of FIG. 5 , FIG. 6 illustrates a layout in which the cathode terminals CA are mainly arranged to extend along the second direction Y. As shown in FIG.

具體而言,陰極端子CA穿過沿第1方向X排列之多個像素PX各自所含之綠色發光元件10G與紅色發光元件10R之間、及開口部CH6與藍色發光元件10B之間,沿第1方向X延伸。 Specifically, the cathode terminal CA passes between the green light-emitting element 10G and the red light-emitting element 10R included in each of the plurality of pixels PX arranged along the first direction X, and between the opening CH6 and the blue light-emitting element 10B. The first direction X extends.

又,陰極端子CA如下般沿第2方向Y延伸:連接發光元件10G之出射面之一端部(矩形狀出射面之沿第1方向X延伸之兩邊中之接近同一像素PX內之紅色發光元件10R之邊)、與發光元件10R之出射面之一端部(矩形狀出射面之沿第1方向X延伸之兩邊中之接近同一像素PX內之綠色發光元件10G之邊)。再者,陰極端子CA如下般沿第2方向Y延伸:連接發光元件10G之出射面之另一端部(矩形狀出射面之沿第1方向X延伸之兩邊中之遠離同一像素PX內之發光元件10R之邊)、與沿第2方向Y排列配置之另一像素PX所含之紅色發光元件10R之出射面的端部(矩形狀出射面之沿第1方向X延伸之邊)。又,陰極端子CA如下般沿第2方向Y延伸:連接發光元件10R之出射面之另一端部(矩形狀出射面之沿第1方向X延伸之兩邊中之遠離同一像素PX內之發光元件10G之邊)、與沿第2方向Y排列配置之另一像素PX所含之綠色發光元件10G之出射面的端部(矩形狀出射面之沿第1方向X延伸之邊)。 In addition, the cathode terminal CA extends in the second direction Y so as to connect one end of the emission surface of the light-emitting element 10G (one of the two sides of the rectangular emission surface extending in the first direction X is close to the red light-emitting element 10R in the same pixel PX). side), and an end of the emitting surface of the light-emitting element 10R (the side of the two sides of the rectangular emitting surface extending along the first direction X that is close to the green light-emitting element 10G in the same pixel PX). Furthermore, the cathode terminal CA extends along the second direction Y as follows: connecting the other end of the emitting surface of the light-emitting element 10G (the two sides of the rectangular emitting surface extending along the first direction X are far from the light-emitting element in the same pixel PX). 10R side), and the end of the output surface of the red light-emitting element 10R included in another pixel PX arranged along the second direction Y (the side of the rectangular output surface extending along the first direction X). In addition, the cathode terminal CA extends in the second direction Y so as to connect the other end of the emission surface of the light-emitting element 10R (out of the two sides of the rectangular emission surface extending in the first direction X away from the light-emitting element 10G in the same pixel PX) side), and the end of the output surface of the green light-emitting element 10G included in the other pixel PX arranged along the second direction Y (the side of the rectangular output surface extending along the first direction X).

如圖6所示,同一像素PX內自綠色發光元件10G對紅色發光元件10R延伸之陰極端子CA、與沿第1方向X延伸之陰極端子CA當然於俯視下交叉。 As shown in FIG. 6 , the cathode terminal CA extending from the green light emitting element 10G to the red light emitting element 10R and the cathode terminal CA extending in the first direction X in the same pixel PX cross in plan view.

陰極端子CA如下般沿第2方向Y延伸,連接發光元件10B之出射面之端部(矩形狀出射面之沿第1方向X延伸之邊)、與沿第2方向Y排列配置之另一像素PX所含之藍色發光元件10B的端部(矩形狀出射面之沿第1方向X延伸之邊),且穿過開口部CH6。換言之,陰極端子CA以分別 連接發光元件10B之出射面之兩端部、與第2方向Y上相鄰之另一像素PX所含之發光元件10B之出射面之端部,且穿過開口部CH6之方式沿第2方向Y延伸。 The cathode terminal CA extends in the second direction Y as follows, and connects the end of the emission surface of the light-emitting element 10B (the side of the rectangular emission surface extending in the first direction X) and another pixel arranged in the second direction Y. The end portion of the blue light-emitting element 10B included in the PX (the side of the rectangular output surface extending in the first direction X) passes through the opening CH6. In other words, the cathode terminals CA are The two ends of the light-emitting element 10B are connected to the end of the light-emitting element 10B included in the other adjacent pixel PX in the second direction Y, and the second direction passes through the opening CH6. Y extension.

如圖6所示,自藍色發光元件10B對第2方向Y上相鄰之另一像素PX所含之藍色發光元件10B延伸之陰極端子CA、與沿第1方向X延伸之陰極端子CA當然於俯視下交叉。 As shown in FIG. 6 , a cathode terminal CA extending from the blue light-emitting element 10B to the blue light-emitting element 10B included in another pixel PX adjacent in the second direction Y and a cathode terminal CA extending in the first direction X Of course it crosses from a top view.

如圖6所示,於陰極端子CA主要沿第2方向Y延伸配置之情形時,雖因陰極端子CA之配置,導致來自第2方向Y之光之提取效率稍微下降,但可獲得能提高來自第1方向X之光之提取效率之優點。 As shown in FIG. 6 , when the cathode terminals CA are mainly arranged to extend along the second direction Y, the extraction efficiency of light from the second direction Y is slightly reduced due to the arrangement of the cathode terminals CA. The advantage of the extraction efficiency of light in the first direction X.

又,於圖5所示之佈局之情形時,因於藍色發光元件10B之四周,陰極端子CA接觸,故可能難以取出藍色之出射光,但於圖6所示之佈局之情形時,因任一顏色之發光元件10R、10G及10B皆於2個端部與陰極端子CA接觸,而陰極端子CA不與四周接觸,故可抑制難以提取特定顏色之出射光之可能性。 In addition, in the case of the layout shown in FIG. 5, since the cathode terminals CA are in contact around the blue light-emitting element 10B, it may be difficult to extract the blue outgoing light, but in the case of the layout shown in FIG. 6, Since the light-emitting elements 10R, 10G, and 10B of any color are in contact with the cathode terminal CA at two ends, and the cathode terminal CA is not in contact with the surroundings, the possibility that it is difficult to extract the outgoing light of a specific color can be suppressed.

再者,於圖5所示之佈局之情形時,因對紅色發光元件10R之陰極端子CA之電壓供給係經由藍色發光元件10B之陰極端子CA而進行(橋接),故發光元件10R、發光元件10G及10B之間施加之電壓可能稍有不同,但於圖6所示之佈局之情形時,因對任一顏色之發光元件10R、10G及10B皆經由沿第1方向X延伸之陰極端子CA均等地供給電壓,故可抑制如上所述之施加不同之電壓之可能性。 Furthermore, in the case of the layout shown in FIG. 5, since the voltage supply to the cathode terminal CA of the red light-emitting element 10R is performed (bridged) through the cathode terminal CA of the blue light-emitting element 10B, the light-emitting element 10R, emits light. The voltage applied between the elements 10G and 10B may be slightly different, but in the case of the layout shown in FIG. CA supplies voltages equally, so the possibility of applying different voltages as described above can be suppressed.

於以下,使用比較例,對本實施形態之顯示裝置1之效果進行說明。另,比較例係用以說明本實施形態之顯示裝置1可發揮之效果之一部分者,並非自本案發明之範圍除去比較例與本實施形態中共通之構 成或效果者。 Hereinafter, the effect of the display device 1 of the present embodiment will be described using a comparative example. In addition, the comparative example is used to illustrate a part of the effects that the display device 1 of the present embodiment can exert, and it is not intended to exclude the common structure between the comparative example and the present embodiment from the scope of the present invention. success or effect.

圖7係模式性顯示比較例之顯示裝置100之剖面構造者。比較例之顯示裝置100與本實施形態之顯示裝置1之不同點在於,於顯示區域DA外側之非顯示區域NDA中,陰極端子CA與電源配線連接,且陰極端子CA由透明導電材料形成。 FIG. 7 schematically shows the cross-sectional structure of the display device 100 of the comparative example. The display device 100 of the comparative example is different from the display device 1 of the present embodiment in that the cathode terminal CA is connected to the power supply wiring in the non-display area NDA outside the display area DA, and the cathode terminal CA is formed of a transparent conductive material.

於比較例之顯示裝置100中,藉由ITO等透明導電材料形成像素PX所含之發光元件10之陰極端子CA,並以多個像素PX共用該陰極端子CA,且對該陰極端子CA施加自設置於非顯示區域NDA之電源配線供給之電壓。於此情形時,基於ITO之電阻之電壓下降,而有越遠離設置於非顯示區域NDA之電源配線配置之發光元件10(例如配置於顯示區域DA之中央附近之發光元件10),施加於陰極端子CA之電壓越小之問題。 In the display device 100 of the comparative example, the cathode terminal CA of the light-emitting element 10 included in the pixel PX is formed by a transparent conductive material such as ITO, and the cathode terminal CA is shared by a plurality of pixels PX, and the cathode terminal CA is applied with self The voltage supplied by the power wiring provided in the non-display area NDA. In this case, the voltage of the resistance of ITO drops, and the light-emitting element 10 arranged farther away from the power supply wiring provided in the non-display area NDA (for example, the light-emitting element 10 arranged near the center of the display area DA) is applied to the cathode. The problem that the voltage of terminal CA is smaller.

相對於此,於本實施形態之顯示裝置1中,因依每一像素PX設置相當於上述之電源配線之共通電源配線22(陰極配線),故可謀求低電阻化,可抑制產生上述之電壓下降之可能性。 On the other hand, in the display device 1 of the present embodiment, since the common power supply wiring 22 (cathode wiring) corresponding to the above-mentioned power supply wiring is provided for each pixel PX, the resistance can be reduced, and the generation of the above-mentioned voltage can be suppressed. possibility of decline.

又,於本實施形態之顯示裝置1中,因陰極端子CA由鈦或經黑化處理之金屬等之金屬材料而非ITO等之透明導電材料形成,故與比較例之顯示裝置100相比,可謀求低電阻化,可進一步抑制產生上述之電壓下降之可能性。 In addition, in the display device 1 of the present embodiment, since the cathode terminal CA is formed of a metal material such as titanium or a blackened metal rather than a transparent conductive material such as ITO, compared with the display device 100 of the comparative example, the The resistance can be reduced, and the possibility of the above-mentioned voltage drop can be further suppressed.

再者,本實施形態之顯示裝置1如圖5及圖6所示,可根據陰極端子CA之佈局,使光之提取效率變化,而可獲得能對應使用者之多種需求之優點。 Furthermore, as shown in FIGS. 5 and 6 , the display device 1 of this embodiment can change the light extraction efficiency according to the layout of the cathode terminals CA, thereby obtaining the advantage of being able to meet various needs of users.

根據以上說明之一實施形態,可提供一種能抑制對向配置陽極端子AN與陰極端子CA之發光元件10(微型LED)中產生之電壓下降的 顯示裝置1。 According to one of the embodiments described above, it is possible to provide a device capable of suppressing voltage drop in the light-emitting element 10 (micro LED) in which the anode terminal AN and the cathode terminal CA are arranged to face each other. Display device 1.

以上,業者基於作為本發明之實施形態說明之顯示裝置,適當進行設計變更而實施之所有顯示裝置係只要包含本發明之主旨,則皆屬於本發明之範圍內。 Above, based on the display device described as an embodiment of the present invention, all display devices implemented by appropriately modifying the design are within the scope of the present invention as long as they include the gist of the present invention.

若為業者,則可於本發明之思想範疇中想到各種變化例,應理解該等變化例亦屬於本發明之範圍者。例如,業者對上述各實施形態適當進行構成要素之追加、刪除、或設計變更者、或進行步驟之追加、省略或條件變更者,只要具備本發明之主旨,則皆包含於本發明之範圍。 If you are a business person, you can think of various modifications within the scope of the idea of the present invention, and it should be understood that these modifications also belong to the scope of the present invention. For example, those who appropriately add, delete, or change the design of the components, or add, omit, or change the conditions of the above-mentioned embodiments are included in the scope of the present invention as long as they have the gist of the present invention.

又,就藉由上述各實施形態中所述之態樣帶來之其他作用效果,關於自本說明書之記載明瞭者、或業者適當想到者,當然應理解為皆係藉由本發明帶來者。 In addition, as for the other functions and effects brought about by the aspects described in the above-mentioned embodiments, those that are clarified from the description of this specification or those that are appropriately conceived by the industry should, of course, be understood to be brought about by the present invention.

本申請案係以日本專利申請案第2019-090813號(申請日:2019年5月13日)為基礎,並享有該申請案之優先權。本申請案藉由參照該申請案而包含該申請案之所有內容。 This application is based on Japanese Patent Application No. 2019-090813 (filing date: May 13, 2019), and enjoys the priority of this application. This application incorporates all content of that application by reference to that application.

10:發光元件 10: Light-emitting elements

22:共通電源配線 22: Common power wiring

31:絕緣層 31: Insulation layer

32:底塗層 32: Base coat

33:層間絕緣膜 33: Interlayer insulating film

34:平坦化膜 34: Flattening film

35:導電層 35: Conductive layer

36:絕緣層 36: Insulation layer

37:像素電極 37: Pixel electrode

38:共通電極 38: Common electrode

39:平坦化膜 39: Flattening film

40:第1中繼電極 40: 1st relay electrode

41:第2中繼電極 41: 2nd relay electrode

42:透明導電層 42: Transparent conductive layer

43:元件絕緣層 43: Component insulation layer

44:平坦化膜 44: Flattening film

45:偏光板 45: polarizer

AN:陽極端子 AN: Anode terminal

AR:陣列基板 AR: Array substrate

CA:陰極端子 CA: Cathode terminal

DA:顯示區域 DA: display area

E1:第1電極 E1: 1st electrode

E2:第2電極 E2: 2nd electrode

GE:閘極電極 GE: gate electrode

GI:閘極絕緣膜 GI: Gate insulating film

SC:半導體層 SC: Semiconductor layer

Claims (8)

一種顯示裝置,其具備:基板;發光元件,其安裝於上述基板上;陽極端子,其配置於上述發光元件之底部;及陰極端子,其配置於與上述陽極端子相反側之上述發光元件之出射面;且上述陰極端子由金屬材料形成;上述陰極端子與上述出射面之端部重疊,且不與上述出射面之中央部分重疊。 A display device comprising: a substrate; a light-emitting element mounted on the substrate; an anode terminal disposed at a bottom of the light-emitting element; and a cathode terminal disposed at an output of the light-emitting element on the opposite side of the anode terminal and the cathode terminal is formed of a metal material; the cathode terminal overlaps with the end of the emitting surface and does not overlap with the central portion of the emitting surface. 如請求項1之顯示裝置,其進而具備:透明導電層,其配置於上述陰極端子、及上述出射面之中央部分之上。 The display device according to claim 1, further comprising: a transparent conductive layer disposed on the cathode terminal and the central portion of the emission surface. 如請求項1之顯示裝置,其具備:複數個像素,其等各自包含上述發光元件、上述陽極端子及上述陰極端子;且依上述每一像素設置用以供給施加於上述陰極端子之電壓之陰極配線。 The display device of claim 1, comprising: a plurality of pixels each including the light-emitting element, the anode terminal, and the cathode terminal; and a cathode for supplying a voltage applied to the cathode terminal is provided for each pixel wiring. 如請求項3之顯示裝置,其中 上述陰極端子經由陰極中繼電極與上述陰極配線電性連接,且上述陰極中繼電極配置於與上述陽極端子同一層。 The display device of claim 3, wherein The cathode terminal is electrically connected to the cathode wiring via a cathode relay electrode, and the cathode relay electrode is arranged on the same layer as the anode terminal. 如請求項4之顯示裝置,其具備:陽極配線,其用以供給施加於上述陽極端子之電壓;且上述陽極端子經由陽極中繼電極與上述陽極配線電性連接,上述陽極中繼電極與上述陰極中繼電極配置於同一層,且於俯視下不重疊。 The display device according to claim 4, comprising: an anode wiring for supplying a voltage applied to the anode terminal; and the anode terminal is electrically connected to the anode wiring via an anode relay electrode, and the anode relay electrode is connected to the anode terminal. The cathode relay electrodes are arranged on the same layer and do not overlap in plan view. 如請求項4之顯示裝置,其中上述陰極端子如下般沿上述第1方向延伸:連接上述出射面之端部、及於與上述顯示裝置之短邊平行之第1方向相鄰之發光元件之出射面之端部,且與和上述陰極中繼電極接觸之接觸部於俯視下重疊。 The display device of claim 4, wherein the cathode terminal extends along the first direction as follows: connecting the end of the output surface and the output of the light-emitting element adjacent to the first direction parallel to the short side of the display device The end portion of the surface overlaps with the contact portion that is in contact with the cathode relay electrode in a plan view. 如請求項4之顯示裝置,其中上述陰極端子如下般沿上述第2方向延伸:連接上述出射面之端部、及於與上述顯示裝置之長邊平行之第2方向相鄰之發光元件之出射面之端部,且與和上述陰極中繼電極接觸之接觸部於俯視下重疊。 The display device of claim 4, wherein the cathode terminal extends along the second direction as follows: connecting the end of the output surface and the output of the light-emitting element adjacent to the second direction parallel to the long side of the display device The end portion of the surface overlaps with the contact portion that is in contact with the cathode relay electrode in a plan view. 如請求項4之顯示裝置,其中上述像素為矩形狀,且 紅色、綠色及藍色之發光元件三角形狀地配置於與上述矩形之4個頂點中之3個頂點對應之位置,且用以電性連接上述陰極端子與上述陰極中繼電極之接觸部配置於與上述3個頂點不同之1個頂點所對應之位置。 The display device of claim 4, wherein the pixels are rectangular, and The red, green and blue light-emitting elements are arranged in a triangle shape at positions corresponding to 3 of the 4 vertices of the rectangle, and the contact portion for electrically connecting the cathode terminal and the cathode relay electrode is arranged on the The position corresponding to 1 vertex different from the above 3 vertices.
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002318556A (en) * 2001-04-20 2002-10-31 Toshiba Corp Active matrix type planar display device and manufacturing method therefor
JP2007073499A (en) * 2005-08-08 2007-03-22 Semiconductor Energy Lab Co Ltd Light-emitting device and its manufacturing method
US20130069067A1 (en) * 2011-09-20 2013-03-21 Keun Chun Youn Organic light emitting diode (oled) display device and method for manufacturing the same
CN109065597A (en) * 2018-08-17 2018-12-21 京东方科技集团股份有限公司 organic light emitting display substrate

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5317396B2 (en) * 1973-04-18 1978-06-08
JPS63120287U (en) * 1986-12-29 1988-08-03
JP2001052858A (en) * 1999-08-05 2001-02-23 Futaba Corp Organic el display device
JP4310984B2 (en) * 2002-02-06 2009-08-12 株式会社日立製作所 Organic light emitting display
JP2004304161A (en) * 2003-03-14 2004-10-28 Sony Corp Light emitting element and device, image display device and method for manufacturing light emitting element and image display device
JP2006019142A (en) 2004-07-01 2006-01-19 Casio Comput Co Ltd Light-emitting device and image displaying device
JP4852660B2 (en) * 2008-12-18 2012-01-11 パナソニック株式会社 Organic electroluminescence display device and manufacturing method thereof
JP2010245365A (en) 2009-04-08 2010-10-28 Sony Corp Method of manufacturing semiconductor light-emitting device assembly, semiconductor light-emitting device, electronic device, and image display device
JP2013021175A (en) 2011-07-12 2013-01-31 Toshiba Corp Semiconductor light-emitting element
CN106716641B (en) * 2014-10-17 2021-07-09 英特尔公司 Miniature LED display and assembly
JP7105612B2 (en) 2018-05-21 2022-07-25 シャープ株式会社 IMAGE DISPLAY DEVICE AND METHOD OF FORMING THE SAME

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002318556A (en) * 2001-04-20 2002-10-31 Toshiba Corp Active matrix type planar display device and manufacturing method therefor
JP2007073499A (en) * 2005-08-08 2007-03-22 Semiconductor Energy Lab Co Ltd Light-emitting device and its manufacturing method
US20130069067A1 (en) * 2011-09-20 2013-03-21 Keun Chun Youn Organic light emitting diode (oled) display device and method for manufacturing the same
CN109065597A (en) * 2018-08-17 2018-12-21 京东方科技集团股份有限公司 organic light emitting display substrate

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