TWI749955B - Manufacturing method and manufacturing machine for reducing non-radiative recombination of micro led - Google Patents

Abstract

The invention is a manufacturing method for reducing non-radiative recombination of micro LED. At least one etched LED epitaxial waferincludes a plurality of etching grooves and a plurality of mesas, an etched sidewall of the mesa includes a stack of a first type semiconductor layer, an active layer and a second type semiconductor layer. Twostage ALDsare performed on the etched LED epitaxial wafer, and the temperature ranges of the twostage ALDs are different. The first ALD can be used to repair danglingbonds and defects on the etched side walls of the mesa, and the second ALD can be used to form a passivation layer on the etched side walls of the mesa. Through the manufacturing method of the present invention, the non-radiative recombination of the micro LED can be reduced, and the luminous brightness and luminous efficiency of the micro LED can be improved.

Description

Manufacturing method and manufacturing machine for reducing non-radiation composite micro-luminescent diode

The invention relates to a manufacturing method and a manufacturing machine of a micro-luminescence diode that reduces non-radiation recombination, which can reduce the non-radiation recombination of the micro-luminescence diode, and can effectively improve the luminous brightness and luminous efficiency of the micro-luminescence diode .

Light-emitting diodes have the advantages of high conversion efficiency, long service life, small size and high safety, and have become a new generation of lighting sources. In addition, light-emitting diodes have replaced traditional cold cathode tubes as the backlight of display panels, and are particularly suitable for small portable electronic devices, such as notebook computers, mobile phones, and tablet computers.

Liquid crystal displays are not self-luminous and suffer from poor efficiency. Even if the liquid crystal displays display white, less than 10% of the light emitted by the backlight will usually pass through the panel, increasing the power consumption of portable electronic devices. In addition to the backlight, the liquid crystal display also needs to be equipped with polarizers, liquid crystals, and color filters, so that the size of the liquid crystal display cannot be further reduced.

In contrast, organic light-emitting diodes have the advantages of self-luminescence, wide viewing angle, high contrast, low power consumption, high response rate, and flexibility, etc., and have gradually replaced liquid crystal displays as the display of a new generation of portable electronic devices. . However, organic light-emitting diodes still have problems such as branding, short life, color degradation and PWM dimming, and major manufacturers have begun to develop next-generation display panels.

At present, Micro LED Display is likely to become the next-generation display panel. Micro-light-emitting diode displays are self-luminous like organic light-emitting diode displays, and they also have the advantages of high color saturation, short response time, and long service life.

At present, there are still many cost and technical bottlenecks that need to be overcome in the commercialization of micro-luminescence diodes. In the manufacturing process of light-emitting diodes, an epitaxial material is mainly grown on a sapphire substrate through metal organic chemical vapor deposition (MOCVD) to form light-emitting diode epitaxial wafers. Etching the light emitting diode epitaxial wafer, and forming a plurality of etching grooves and a plurality of mesa structures (MESA) on the surface of the light emitting diode epitaxial wafer. Then, the light-emitting diode epitaxial wafer is cut along the etching groove to complete the production of the light-emitting diode crystal grains.

In the process of etching the light-emitting diode epitaxial wafer, defects and dangling bonds will be formed on the etched sidewalls of the platform structure, causing the etched sidewalls of the light-emitting diodes to produce non-radiative recombination (non-radiative). recombination), which in turn affects the luminous brightness of the light-emitting diode.

The size of the traditional light-emitting diode and platform structure is much larger than the etched side wall, so the non-radiative recombination has little effect on the overall luminous brightness and can usually be ignored. However, the size of the micro-light-emitting diode and the platform structure is small, so that the non-radiative recombination that occurs on the etched side wall will have a considerable impact on the luminous brightness of the micro-light-emitting diode. Therefore, how to reduce the non-radiative recombination of the etched side walls of the micro-light-emitting diode has become one of the main problems that must be faced during the commercialization of the micro-light-emitting diode.

In order to solve the above-mentioned problems of the prior art, the present invention proposes a method for reducing non-radiative composite micro-light-emitting diodes, which can effectively repair the defects and dangling bonds on the etching side walls of the micro-light-emitting diodes and the platform structure (MESA) (dangling bond) and forming a passivation layer on the micro-light-emitting diode and platform structure to reduce non-radiative recombination on the etched side walls of the micro-light-emitting diode.

One objective of the present invention is to provide a method for manufacturing a micro-light-emitting diode that reduces non-radiative recombination, which is mainly used to process etched light-emitting diode epitaxial wafers. The light-emitting diode epitaxial wafer includes a substrate, a first-type semiconductor layer, an active layer, and a second-type semiconductor layer, wherein the first-type semiconductor layer, the active layer, and the second-type semiconductor layer are stacked on the substrate . A plurality of etching grooves and a plurality of terrace structures are formed on the surface of the etched light-emitting diode epitaxy wafer. The etched sidewalls of the terrace structure include exposed first-type semiconductor layers, active layers, and second-type semiconductor layers. Then, the light-emitting diode epitaxial wafer can be cut along the etching groove to produce a plurality of micro-light-emitting diodes.

During the etching process, at least one floating bond and/or at least one defect will be formed on the etched sidewall of the light-emitting diode epitaxial wafer, and non-radiative recombination will be generated on the etched sidewall of the micro-light-emitting diode and the platform structure. The size of the micro-light-emitting diode is very small, usually between 10-100um, so that the size of the micro-light-emitting diode and the platform structure is similar to that of the etched side wall. Therefore, when non-radiative recombination is produced by etching the sidewall, it will greatly affect the luminous brightness of the micro-luminescence diode. For this reason, the present invention proposes a method for reducing non-radiative recombination micro light-emitting diodes, which mainly repairs suspending bonds and/or defects on the etched light-emitting diode epitaxial wafers, and then repairs the repaired light-emitting diodes. The bulk epitaxial wafer undergoes atomic layer deposition to form a passivation layer on the etching side wall of the light-emitting diode epitaxial wafer to Prevent non-radiative recombination on the etched side walls of the micro-light-emitting diode and platform structure, and can effectively improve the luminous brightness and conversion efficiency of the micro-light-emitting diode

An object of the present invention is to provide a method for manufacturing a micro-light-emitting diode that reduces non-radiative recombination, which mainly performs two-stage atomic layer deposition on at least one etched light-emitting diode epitaxial wafer, wherein the two-stage atomic layer The deposition temperature is different. Performing first atomic layer deposition on the etched light-emitting diode epitaxial wafer can repair the floating bonds and/or defects of the etched sidewalls. Performing second atomic layer deposition on the etched light-emitting diode epitaxy wafer that has undergone the first atomic layer deposition will form a passivation layer on the etched side wall of the light-emitting diode epitaxy wafer to prevent micro-light-emitting diodes And the etched side wall of the platform structure produces non-radiative recombination.

An object of the present invention is to provide a method for manufacturing a micro-light-emitting diode that reduces non-radiative recombination. The etched light-emitting diode epitaxial wafer is placed in a reaction chamber and a repair gas is delivered to the reaction chamber. The cavity, in which the repair gas reacts with the floating bonds and/or defects of the etched sidewalls, and repairs the floating bonds and/or defects of the etched light-emitting diode epitaxial wafer. Then, atomic layer deposition is performed on the repaired light-emitting diode epitaxial wafer to form a passivation layer on the etching side wall of the platform structure.

In addition, it can be determined whether to provide an AC voltage to the reaction chamber according to the type of repairing gas, so that the repairing gas forms a plasma, wherein the repairing gas of plasma can improve the effect of repairing the floating bonds and/or defects of the light-emitting diode And efficiency, and help to reduce the non-radiative recombination in the etching side walls of the micro-light-emitting diode and the platform structure.

In order to achieve the above objective, the present invention proposes a method for manufacturing a micro-light-emitting diode that reduces non-radiative recombination. Etched trenches and a plurality of platform structures, of which the platform The structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is located between the first-type semiconductor layer and the second-type semiconductor layer; A first atomic layer deposition is performed in the temperature range; and a second atomic layer deposition is performed on the etched light-emitting diode epitaxial wafer after the first atomic layer deposition in a second temperature range, and at least one etching side of the platform structure The first type semiconductor layer, the active layer and the second type semiconductor layer on the wall form a passivation layer, wherein the first temperature range is different from the second temperature range.

The present invention provides another method for manufacturing a micro light emitting diode that reduces non-radiative recombination, including: providing at least one etched light emitting diode epitaxial wafer, the etched light emitting diode epitaxial wafer including a plurality of etching grooves and A plurality of platform structures, wherein the platform structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is located between the first-type semiconductor layer and the second-type semiconductor layer; The epitaxy wafer is placed in a reaction chamber, and a repair gas is delivered into the reaction chamber, where the repair gas will react with the etched light emitting diode epitaxial wafer; and the etched light emitting diode epitaxial wafer is processed An atomic layer is deposited, and a passivation layer is formed on the first type semiconductor layer, the active layer and the second type semiconductor layer on at least one etching side wall of the platform structure.

The present invention also provides a manufacturing machine for reducing non-radiative recombination of micro-light-emitting diodes, including: a transfer cavity, including at least one transfer device for transferring at least one etched light-emitting diode epitaxial wafer, wherein the etching The latter light-emitting diode epitaxial wafer includes a plurality of etched trenches and a plurality of platform structures. The platform structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is located on the first-type semiconductor layer and Between the second-type semiconductor layers; at least one first atomic layer deposition chamber connected to the transfer chamber, wherein the transfer device transfers the etched light-emitting diode epitaxial wafer to the first atomic layer deposition chamber, and in the first Atomic layer deposition chamber with a first Perform a first atomic layer deposition on the etched light-emitting diode epitaxy wafer in a temperature range; and at least one second atomic layer deposition chamber connected to the transmission cavity, wherein the transmission device will be etched by the first atomic layer deposition The light-emitting diode epitaxial wafer is transferred to the second atomic layer deposition chamber, and a second atomic layer deposition is performed on the etched light-emitting diode epitaxial wafer in a second temperature range in the second atomic layer deposition chamber, A passivation layer is formed with the first type semiconductor layer, the active layer and the second type semiconductor layer on at least one etching side wall of the platform structure, wherein the first temperature range is different from the second temperature range.

The present invention provides another micro-light-emitting diode manufacturing machine for reducing non-radiative recombination, including: a transfer cavity, including at least one transfer device for transferring at least one etched light-emitting diode epitaxial wafer, wherein the etching The latter light-emitting diode epitaxial wafer includes a plurality of etched trenches and a plurality of platform structures. The platform structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is located on the first-type semiconductor layer and Between the second-type semiconductor layers; at least one reaction chamber, connected to the transfer chamber, wherein the transfer device transfers the etched light-emitting diode epitaxial wafer to the reaction chamber, and delivers a repair gas to the reaction chamber, so that The repair gas reacts with the etched light-emitting diode epitaxial wafer; and at least one atomic layer deposition chamber is connected to the transfer chamber, wherein the transfer device transfers the etched light-emitting diode epitaxial wafer in the reaction chamber to the atomic layer deposition Cavity, and perform an atomic layer deposition on the etched light-emitting diode epitaxial wafer in the atomic layer deposition chamber to etch the first type semiconductor layer, the active layer and the second type on at least one side wall of the platform structure The semiconductor layer forms a passivation layer.

In the method for manufacturing a micro-light-emitting diode that reduces non-radiation recombination, the first atomic layer deposition is used to repair at least one dangling bond or at least one defect of the etched light-emitting diode epitaxial wafer, and the second atomic layer A passivation layer is deposited on a top surface of the platform structure.

In the method for reducing non-radiation recombination micro light-emitting diodes, a precursor gas used in the first atomic layer deposition, the second atomic layer deposition and the atomic layer deposition includes organoaluminum compound, water, glycol, Ozone or ethanol.

In the method for manufacturing a micro-light emitting diode that reduces non-radiation recombination, the atomic layer is deposited in the reaction chamber.

The manufacturing method of the non-radiative recombination micro light-emitting diode includes providing an AC voltage to the reaction chamber, so that the repair gas in the reaction chamber becomes a plasma, wherein the repair gas after the plasma will be The light emitting diode epitaxial wafer reacts and repairs at least one floating bond or at least one defect of the etched light emitting diode epitaxial wafer, and the second atomic layer is deposited on a top surface of the platform structure with a passivation layer.

In the method for manufacturing a micro-luminescent diode that reduces non-radiation recombination, the repair gas is nitrogen, oxygen or ozone.

20: Light-emitting diode epitaxy chip

200: Etched light-emitting diode epitaxial wafer

21: substrate

22: Etching grooves

23: The first type semiconductor layer

24: Platform structure

241: Etching Side Wall

243: top surface

25: active layer

26: Contact electrode

27: Type II semiconductor layer

29: Passivation layer

40: Micro-luminescence diode production machine

41: Teleportation Chamber

411: Conveyor

42: Carrier plate

43: The first atomic layer deposition chamber

430: Reaction Chamber

45: The second atomic layer deposition chamber

450: Atomic layer deposition chamber

[Fig. 1] is a flowchart of an embodiment of a method for manufacturing a micro-light emitting diode for reducing non-radiation recombination according to the present invention.

[Fig. 2] is a schematic cross-sectional view of an embodiment of a light-emitting diode epitaxial wafer of the present invention.

[FIG. 3] is a schematic cross-sectional view of an embodiment of the light-emitting diode epitaxial wafer after etching of the present invention.

Fig. 4 is a schematic cross-sectional view of an embodiment of an etched light-emitting diode epitaxial wafer provided with a passivation layer according to the present invention.

Fig. 5 is a schematic cross-sectional view of another embodiment of an etched light emitting diode epitaxial wafer provided with a passivation layer according to the present invention.

[Fig. 6] is a flowchart of another embodiment of the method for manufacturing a micro-luminescent diode for reducing non-radiation recombination according to the present invention.

[Fig. 7] is a schematic diagram of an embodiment of a manufacturing machine for reducing non-radiation composite micro-light-emitting diodes of the present invention.

Please refer to FIG. 1, which is a flowchart of an embodiment of a method for manufacturing a micro-luminescence diode for reducing non-radiation recombination according to the present invention. Please refer to FIGS. 2 to 5, at least one light emitting diode epitaxial chip 20 is provided, wherein the light emitting diode epitaxial chip 20 includes a substrate 21, a first type semiconductor layer 23, an active layer 25 and a second type Semiconductor layer 27. In the manufacturing process of light-emitting diodes, the first type semiconductor layer 23, the active layer 25 and the second type semiconductor layer 27 can be sequentially grown on the substrate 21 through metal organic chemical vapor deposition (MOCVD), wherein the active layer 25 is located Between the first type semiconductor layer 23 and the second type semiconductor layer 27, as shown in FIG. For example, the substrate 21 is sapphire (Sapphire), silicon carbide (SiC), silicon (Si), gallium arsenide (GaAs), lithium metaaluminate (LiAlO2), magnesium oxide (MgO), zinc oxide (ZnO), gallium nitride (GaN), Aluminum Nitride (AlN), or InN The type semiconductor layer 27 is a P type semiconductor.

The light emitting diode epitaxial wafer 20 is etched, and a plurality of etching trenches 22 and a plurality of terrace structures 24 are formed on a surface of the light emitting diode epitaxial wafer 20. The etching trenches 22 expose the first type semiconductor layer 23 and form a The etched light-emitting diode epitaxial wafer 200 is shown in step 11 and FIG. 3.

The platform structure 24 of the etched light-emitting diode epitaxy wafer 200 includes a plurality of etched sidewalls 241, wherein the etched sidewalls 241 are located at the junction of the platform structure 24 and the etching trench 22, and the platform structure 24 is provided on the etched sidewalls 241 The first-type semiconductor layer 23, the active layer 25, and the second-type semiconductor layer 27 are exposed. For example, the etching groove 22 may be a checkerboard-shaped groove, and the platform structure 24 may be protrusions arranged in a matrix, which may be square protrusions or circular protrusions.

During the etching process, the structure of the light-emitting diode epitaxial wafer 20 will be destroyed, and at least one dangling bond and/or at least one defect will be formed on the etched sidewall 241 of the etched light-emitting diode epitaxial wafer 200, so that Etching the sidewall 241 produces non-radiative recombination.

Since the size of the micro-light-emitting diode and the platform structure 24 is small, for example, between 10-100 um, it is similar to the size of the etched sidewall 241 on the micro-light-emitting diode and the platform structure 24. Therefore, when the sidewall 241 is etched to produce non-radiative recombination, it will inevitably greatly affect the luminous brightness of the micro light emitting diode.

For this reason, the present invention performs a first atomic layer deposition on the etched light-emitting diode epitaxial wafer 200 in the first temperature range, as shown in step 13. During the first atomic layer deposition process on the etched LED epitaxial wafer 200, the precursor gas may react with the etched LED epitaxial wafer 200 and repair the etched LED epitaxial wafer. The floating bonds and defects of the platform structure 24 of the wafer 200 can preliminarily prevent the non-radiative recombination of the etched sidewall 241.

Perform second atomic layer deposition on the etched light-emitting diode epitaxial wafer 200 after the first atomic layer deposition in the second temperature range, and etch the first type semiconductor layer 23 and the active layer on the sidewall 241 of the platform structure 24 25 and the second type semiconductor layer 27 are formed to form a passivation layer 29, as shown in step 15 and FIG. 4. In an embodiment of the present invention, the passivation layer 29 can completely cover the etching trench 22, for example, cover the bottom and sides of the etching trench 22, so as to prevent the etched sidewalls 241 of the platform structure 24 from generating abnormalities. Radiation recombination. In an embodiment of the present invention, the precursor gases used in the first atomic layer deposition and the second atomic layer deposition include organoaluminum compounds, TMA, water, glycol, ozone or ethanol, and the passivation layer 29 may be trioxide. Aluminum (Al2O3).

In the embodiment of the present invention, the first temperature interval for performing the first atomic layer deposition is different from the second temperature interval for performing the second atomic layer deposition. When the first temperature interval is smaller than the second temperature interval, the first atomic layer deposition time can be prolonged, and the reaction time for repairing the floating bonds and defects of the etching sidewall spacer 241 can be increased. When the first temperature range is greater than the second temperature range, the activity of the precursor gas during the deposition of the first atomic layer can be improved, and it is also beneficial to repair the floating bonds and defects of the etched sidewall spacers 241. Specifically, the above steps 13 to 15 can be applied to batch atomic layer deposition (Batch ALD) or spatial atomic layer deposition (Spatial ALD). In addition, the time for the deposition of the first atomic layer may be greater or far greater than the time for the deposition of the second atomic layer.

The following table is the experimental data of only the second atomic layer deposition is performed, the first atomic layer deposition is not performed, the first temperature interval is less than the second temperature interval, and the first temperature interval is greater than the second temperature interval. The difference in luminous intensity (%) in the following table is the intensity comparison of the micro-light-emitting diode formed by the above process conditions and the micro-light-emitting diode epitaxial wafer 200 with about 5000 A of silicon dioxide (SiO2) formed on the surface. In addition, the following data does not immediately perform the first and/or second atomic layer deposition after the etching of the light-emitting diode epitaxial wafer 20 is completed, so the following data is not absolute.

As shown in Table 1, when the first atomic layer deposition is not performed, the brightness of the micro light emitting diode cannot be effectively improved. As shown in Table 2, when the first temperature interval is 200°C and the second temperature interval is 220°C, the brightness of the micro light-emitting diode is slightly improved. As shown in Table 3, when the first temperature interval is 270°C and the second temperature interval is 220°C, the brightness of the micro light-emitting diode is significantly improved. As shown in Table 4, when the first temperature interval is 150°C and the second temperature interval is 220°C, the brightness of the micro light-emitting diode is also significantly improved. It can be explained that when the first temperature range of the first atomic layer deposition is different from the second temperature range of the second atomic layer deposition, the luminescence of the micro light emitting diode can be improved. brightness. Of course, the data in the above table is only the experimental data of the present invention, and is not a limitation of the scope of rights of the present invention.

In another embodiment of the present invention, the second atomic layer deposition can also provide a passivation layer 29 on a top surface 243 of the mesa structure 24, where the passivation layer 29 not only covers the etched sidewalls 241 of the mesa structure 24, but also extends to The top surface 243 of the platform structure 24 is shown in FIG. 5. In addition, the passivation layer 29 is provided on the etched sidewalls 241 and the top surface 243 of the platform structure 24, and the passivation layer 29 can also be used as a reflective layer to reflect the light source generated by the micro light emitting diode and the platform structure 24.

In actual application, the contact electrode 26 can be provided on the platform structure 24 first, and then the passivation layer 29 can be provided. The passivation layer 29 can be in contact with the contact electrode 26, or after the passivation layer 29 is set, it can be placed on the platform structure 24. The contact electrode 26 is provided. After the passivation layer 29 is set up, the etched light emitting diode epitaxial wafer 200 can be cut along the etching groove 22 to form a plurality of micro light emitting diodes.

In an embodiment of the present invention, contact electrodes 26, a reflective layer, a transparent current diffusion layer, etc. may be provided on the etched light-emitting diode epitaxial wafer 200. The structure is common in the field of light-emitting diode technology. The key point of the invention will not be explained in detail for this reason.

Please refer to FIG. 6, which is a flowchart of another embodiment of a method for manufacturing a micro-light-emitting diode for reducing non-radiation recombination according to the present invention. Please refer to FIGS. 2 to 5 together. First, at least one light-emitting diode epitaxial chip 20 is provided. The light-emitting diode epitaxial chip 20 includes a substrate 21, a first-type semiconductor layer 23, an active layer 25, and a second Type semiconductor layer 27.

Etch the light emitting diode epitaxial wafer 20 to form a plurality of etching grooves 22 and a plurality of terrace structures 24 on the light emitting diode epitaxial wafer 20, and form an etched light emitting diode epitaxial wafer 200, as in steps 11 and As shown in Figure 3. The platform structure 24 of the etched light-emitting diode epitaxy wafer 200 includes plural Etched sidewalls 241, wherein the etched sidewalls 241 are located at the junction of the mesa structure 24 and the etching trench 22, and the etched sidewalls 241 have exposed first-type semiconductor layers 23, active layers 25, and second-type semiconductor layers 27 . For example, the etching groove 22 may be a checkerboard-shaped groove, and the platform structure 24 may be protrusions arranged in a matrix, which may be square protrusions or circular protrusions.

Place the etched light emitting diode epitaxy wafer 200 in a reaction chamber, and deliver a repair gas into the reaction chamber, as shown in step 33. In practical applications, the repair gas can be selected according to the materials of the first-type semiconductor layer 23, the active layer 25, and the second-type semiconductor layer 27, where the repair gas includes oxygen, nitrogen, or ozone.

Provide an AC voltage to the reaction chamber, so that the repair gas in the reaction chamber becomes plasma. The plasma repair gas will react with the etched light-emitting diode epitaxial wafer 200 and repair the etched light-emitting diode Epitaxial wafer 200, as shown in step 35. For example, when the first type semiconductor layer 23, the active layer 25, and the second type semiconductor layer 27 are indium gallium nitride (InGaN), the repair gas can be nitrogen, and the etching side of the platform structure 24 is repaired through the plasma repair gas 241 floating bonds and defects. In an embodiment of the present invention, the reaction chamber may be a general physical vapor deposition chamber or an atomic layer deposition chamber, so that the etched light-emitting diode epitaxial wafer 200 can be repaired with a plasma repair gas.

In addition, when repairing gas and ozone, there is no need to provide AC voltage to the reaction chamber. As long as a certain concentration of ozone is provided in the reaction chamber, the ozone can react with the etched light-emitting diode epitaxial wafer 200 and repair the floating bonds and defects of the etched side 241 of the platform structure 24. Therefore, step 35 is not a necessary step of the present invention, and it can be determined whether to perform step 35 according to the type of repair gas. In addition, after the repairing gas is delivered to the reaction chamber, the temperature of the reaction chamber and the repairing gas can be increased.

Perform atomic layer deposition on the repaired and etched light-emitting diode epitaxy wafer 200, and form a passivation layer 29 on at least one etched side 241 of the mesa structure 24, wherein the passivation layer 29 covers the etched side 241 of the mesa structure 24 The upper first type semiconductor layer 23, active layer 25, and second type semiconductor layer 27 are as shown in step 37. In an embodiment of the present invention, the precursor gas used for atomic layer deposition includes organoaluminum compound, TMA, water, glycol, ozone or ethanol, and the passivation layer 29 may be aluminum oxide (Al2O3).

The repair reaction and the atomic layer deposition process described in step 33 to step 37 can be performed in the same or two different reaction chambers. For example, when the temperature of the repair reaction and the atomic layer deposition process are the same or similar, they can A reaction chamber or the same atomic layer deposition chamber is used for repair reaction and atomic layer deposition process. Specifically, the above steps 33 to 37 can be applied to batch atomic layer deposition (Batch ALD) or spatial atomic layer deposition (Spatial ALD). In addition, the repair reaction time can be longer or much longer than the atomic layer deposition time.

Please refer to FIG. 7, which is a schematic structural view of an embodiment of a manufacturing machine for reducing non-radiation composite micro-light-emitting diodes according to the present invention. Please refer to FIG. 1, the manufacturing machine 40 of the micro light emitting diode includes a transmission cavity 41, at least one first atomic layer deposition cavity 43, and at least one second atomic layer deposition cavity 45, wherein the transmission cavity 41 The first atomic layer deposition chamber 43 and the second atomic layer deposition chamber 45 are connected, and the transfer chamber 41, the first atomic layer deposition chamber 43, and the second atomic layer deposition chamber 45 are kept at low pressure or vacuum.

In an embodiment of the present invention, the transfer chamber 41 includes at least one transfer device 411, for example, the transfer device 411 may be a robotic arm, wherein the transfer device 411 is used to carry and transfer at least one etched light-emitting diode epitaxial wafer 200. In practical applications, a plurality of etched light-emitting diode epitaxial wafers 200 can be placed on a carrier plate 42 and carried and transported by the transport device 411 The disk 42 and the etched light-emitting diode epitaxial wafer 200. The conveying device 411 can expand and contract with respect to the first atomic layer deposition chamber 43 and the second atomic layer deposition chamber 45, and convey the etched light-emitting diode epitaxy wafer 200 to the first atomic layer deposition chamber 43 and the second atomic layer deposition chamber 43 and the second atomic layer deposition chamber 45. The atomic layer deposition cavity 45, or the etched light emitting diode epitaxial wafer 200 is taken out from the first atomic layer deposition cavity 43 and the second atomic layer deposition cavity 45.

The conveying device 411 first conveys the etched light-emitting diode epitaxial wafer 200 into the first atomic layer deposition chamber 43, and performs a first temperature interval on the etched light-emitting diode in the first atomic layer deposition chamber 43. The bulk wafer 200 undergoes first atomic layer deposition. When the first atomic layer deposition is performed in the first atomic layer deposition chamber 43, the precursor gas can be used to repair the floating bonds and defects on the etched sidewall 241 of the platform structure 24, and preliminarily prevent the non-radiative recombination of the etched sidewall 241.

Then the transfer device 411 takes the etched light-emitting diode epitaxial wafer 200 after the first atomic layer deposition out of the first atomic layer deposition chamber 43 and transfers it to the second atomic layer deposition chamber 45. The second atomic layer deposition chamber 45 performs second atomic layer deposition on the etched light-emitting diode epitaxial wafer 200 in a second temperature range, so as to deposit on the etched sidewall 241 of the etched light-emitting diode epitaxial wafer 200 A passivation layer 29 is formed, wherein the passivation layer 29 covers the first type semiconductor layer 23, the active layer 25 and the second type semiconductor layer 27 on the etched sidewall 241 of the mesa structure 24 to prevent the sidewall from being etched on the mesa structure 24 241 non-radiative recombination occurred.

In the embodiment of the present invention, the first temperature interval is different from the second temperature interval. When the first temperature range is smaller than the second temperature range, the time for the first atomic layer deposition can be prolonged, and the time for repairing the floating bonds and defects on the etching sidewall spacer 241 can be increased. When the first temperature range is greater than the second temperature range, the activity of the precursor gas during the first atomic layer deposition can be increased, which is also beneficial to repair the floating bonds and defects of the etching sidewall spacer 241.

In another embodiment of the present invention, the aforementioned first atomic layer deposition chamber 43 may be a reaction chamber 430, and the second atomic layer deposition chamber 45 may be an atomic layer deposition chamber 450. The reaction chamber 430 and the atomic layer deposition chamber 450 are connected to the transfer chamber 41, and the etched light-emitting diode cell is transferred between the reaction chamber 430 and the atomic layer deposition chamber 450 through the transfer device 411 of the transfer chamber 41 Wafer 200.

The conveying device 411 first conveys the etched light-emitting diode epitaxial wafer 200 to the reaction chamber 43 and conveys a repair gas into the reaction chamber 430. Then, an AC voltage can be provided to the reaction cavity 430 so that the repair gas in the reaction cavity 430 becomes plasma. The plasma repair gas will react with the etched light-emitting diode epitaxial wafer 200 and repair the etched light-emitting diode epitaxial wafer 200, such as repairing the first type semiconductor on the etched sidewall 241 of the platform structure 24 The floating bonds and defects of the layer 23, the active layer 25, and the second-type semiconductor layer 27. In practical applications, the repair gas can be selected according to the materials of the first type semiconductor layer 23, the active layer 25, and the second type semiconductor layer 27, where the repair gas includes oxygen, nitrogen, and ozone.

In addition, when repairing gas and ozone, there is no need to provide AC voltage to the reaction chamber. As long as a certain concentration of ozone is provided in the reaction chamber, the ozone can react with the etched light-emitting diode epitaxy wafer 200.

The transfer device 411 takes out the repaired and etched light-emitting diode epitaxial wafer 200 in the reaction chamber 430 and transfers it into the atomic layer deposition chamber 450. The atomic layer deposition chamber 450 performs an atomic layer deposition on the etched light emitting diode epitaxial wafer 200 to form a passivation layer 29 on the etched sidewall 241 of the platform structure 24, for example, the passivation layer 29 covers the etched sidewall 241 The upper first type semiconductor layer 23, the active layer 25 and the second type semiconductor layer 27 prevent non-radiative recombination in the etched sidewall 241 of the mesa structure 24.

The above is only one of the preferred embodiments of the present invention, and is not used to limit the scope of implementation of the present invention. That is to say, all the shapes, structures, features and spirits described in the scope of the patent application of the present invention are equivalently changed and changed. Modifications shall be included in the scope of the patent application of the present invention.

Claims (4)

A method for manufacturing a micro light emitting diode that reduces non-radiative recombination includes: providing at least one etched light emitting diode epitaxial wafer, the etched light emitting diode epitaxial wafer including a plurality of etching grooves and a plurality of platforms Structure, wherein the platform structure includes a first-type semiconductor layer, an active layer and a second-type semiconductor layer, the active layer is located between the first-type semiconductor layer and the second-type semiconductor layer; the etched light emission A first atomic layer deposition is performed on the epitaxial diode wafer in a first temperature range, wherein at least one precursor gas deposited by the first atomic layer reacts with the etched light-emitting diode epitaxial wafer; The etched light-emitting diode epitaxial wafer of atomic layer deposition is subjected to a second atomic layer deposition in a second temperature range, and the first type semiconductor layer and the active layer are deposited on at least one etching side wall of the platform structure The layer and the second type semiconductor layer form a passivation layer, wherein the first temperature interval is different from the second temperature interval. The method for manufacturing a micro-light-emitting diode that reduces non-radiation recombination according to claim 1, wherein the first atomic layer deposition is used to repair at least one floating bond or at least one defect of the etched light-emitting diode epitaxial wafer , And the second atomic layer deposition provides the passivation layer on a top surface of the platform structure. The method for manufacturing a non-radiation-reducing composite micro-light-emitting diode according to claim 1, wherein a precursor gas used in the first atomic layer deposition and the second atomic layer deposition includes organometallic compounds, organosilicon compounds, Silicon chloride compound, water, glycol, ozone or ethanol. A manufacturing machine for reducing non-radiative recombination of micro light-emitting diodes, comprising: a conveying cavity, including at least one conveying device for conveying at least one etched light-emitting diode epitaxial wafer, wherein the etched light-emitting diode The diode epitaxial wafer includes a plurality of etched grooves and a plurality of terrace structures The platform structure includes a first-type semiconductor layer, an active layer, and a second-type semiconductor layer. The active layer is located between the first-type semiconductor layer and the second-type semiconductor layer; at least one first atomic layer The deposition chamber is connected to the transfer chamber, wherein the transfer device transfers the etched light-emitting diode epitaxial wafer to the first atomic layer deposition chamber, and uses a first atomic layer deposition chamber in the first atomic layer deposition chamber. Perform a first atomic layer deposition on the etched light-emitting diode epitaxial wafer in the temperature range, wherein at least one precursor gas deposited by the first atomic layer reacts with the etched light-emitting diode epitaxial wafer; and at least one The second atomic layer deposition chamber is connected to the transfer chamber, wherein the transfer device transfers the etched light-emitting diode epitaxial wafer after the first atomic layer deposition to the second atomic layer deposition chamber, and In the second atomic layer deposition chamber, a second atomic layer deposition is performed on the etched light-emitting diode epitaxial wafer in a second temperature range, so as to deposit the first type on at least one etched side wall of the platform structure The semiconductor layer, the active layer and the second type semiconductor layer form a passivation layer, wherein the first temperature interval is different from the second temperature interval.

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