TWI749446B - Substrate drying chamber - Google Patents

Abstract

The present invention relates to a substrate drying chamber including an upper housing, a lower housing openably coupled to the upper housing, a sealing part provided on a coupling surface between the lower housing and the upper housing, a substrate placement plate which is coupled to a bottom surface of the lower housing and on which a substrate on which an organic solvent is arranged, an integrated supply/discharge port formed to extend from one side surface to another side surface of the lower housing, formed to be directed to the substrate placement plate in an intermediate region of the one side surface and the another side surface, and configured to provide a supply path of a supercritical fluid for initial pressurization and a discharge path of a supercritical fluid in which an organic solvent formed on the substrate is dissolved after drying, and an upper supply port formed to be directed to the substrate placement plate in a central region of the upper housing and configured to provide the supply path of the supercritical fluid for drying.

Description

Substrate drying chamber

The invention relates to a substrate drying chamber. More specifically, the present invention relates to a method capable of inducing a symmetrical flow when supplying or discharging a supercritical fluid and by uniformly distributing and supplying the supercritical fluid in a cavity and discharging the supercritical fluid from the cavity. A technology to increase the efficiency of substrate drying and prevent particles from being introduced onto a substrate inside the cavity when a drying process is terminated and the cavity is open.

A manufacturing process of a semiconductor device includes various processes, such as a lithography process, an etching process, an ion implantation process, and the like. After each process is terminated and before a subsequent process is performed, a cleaning process and a drying process are performed to remove impurities and residues remaining on the surface of a wafer to clean the surface of the wafer.

For example, in a cleaning process of a wafer after an etching process, a chemical liquid used for the cleaning process is supplied to a surface of a wafer, and then deionized water (DIW) is supplied to perform a rinse process. After the rinsing process, a drying process is performed to remove the DIW remaining on the wafer surface to dry the wafer.

For example, a technique of drying a wafer by replacing DIW on a wafer with isopropyl alcohol (IPA) is known as a method of performing a drying process.

However, as shown in FIG. 1, according to this conventional drying technique, during the drying process, a problem occurs that a pattern formed on the wafer collapses due to the surface tension of the IPA as a liquid.

In order to solve the above problems, a supercritical drying technique in which the surface tension becomes zero has been proposed.

According to this supercritical drying technology, carbon dioxide (CO ₂ ) in a supercritical state is supplied to a wafer whose surface is wetted by IPA in a cavity so that the IPA on the wafer is dissolved in a supercritical CO ₂ fluid middle. _{Then, the supercritical CO 2} fluid dissolved with IPA is gradually discharged from the cavity so that the wafer can be dried without pattern collapse.

FIG. 2 shows a substrate processing chamber disclosed in Korean Patent Laid-Open Application No. 10-2017-0137243 (which is a prior art that uses this supercritical fluid in conjunction with a substrate processing device).

Referring to FIG. 2, in a process of removing an organic solvent in a supercritical drying process, an organic solvent can be introduced onto a coupling surface on which a high-pressure cavity 410, an upper body 430 and a lower body are formed. The main bodies 420 are in contact with each other. The organic solvent introduced into the coupling surface between the upper body 430 and the lower body 420 becomes particles accumulated around the coupling surface.

After the supercritical drying process is terminated, the high-pressure chamber 410 is opened to return the processed substrate to the outside. In this case, due to a pressure difference between the inside of one of the high pressure chambers 410 and the outside, particles around the coupling surface between the upper body 430 and the lower body 420 may be introduced into the inside of the high pressure chamber 410.

According to Korean Patent Laid-open Application No. 10-2017-0137243, since a substrate is positioned below the coupling surface between the upper body 430 and the lower body 420, and the coupling surface between the upper body 430 and the lower body 420 is around the The particles are introduced into the interior of the high-pressure chamber 410, so there is a high probability that some particles are introduced onto the substrate due to gravity.

As described above, since the particles introduced onto the substrate cause a process defect in order to prevent the particles from being introduced, it is necessary to additionally install a barrier curtain around the coupling surface between the upper body 430 and the lower body 420. Accordingly, there is a problem that the overall structure of one of the devices is complicated.

In addition, according to the related technology including Korean Patent Laid-Open Application No. 10-2017-0137243, one of the lower supply ports 422 is used to supply a supercritical fluid to be initially pressurized and one of the supercritical fluids is discharged after drying. The discharge port 426 is not positioned at a center of the lower body 420, so when the supercritical fluid is supplied and discharged, an asymmetric flow of the supercritical fluid is formed, making it difficult to uniformly distribute and supply the supercritical fluid in the high pressure chamber 410 and The supercritical fluid is discharged from the high pressure chamber 410. Therefore, one of the problems of degradation of drying efficiency occurs.

(Related technical documents)

(Patent Document)

(Patent Document 1) Korean Patent Publication Application No. 10-2017-0137243 (Publication date: December 13, 2017, title: Apparatus and method for treating substrate).

1. Technical issues

One technical purpose of the present invention is to provide a supply path of a supercritical fluid to be initially pressurized through an integrated supply/discharge port and one of the supercritical fluids dissolved in an organic solvent and formed on a substrate after drying The discharge path thereby increases the substrate drying efficiency by inducing a symmetrical flow when supplying and discharging the supercritical fluid to uniformly distribute and supply the supercritical fluid in a cavity and discharge the supercritical fluid from the cavity.

Another technical purpose of the present invention is to reduce the time of the drying process by the following steps: use the substrate placement plate, which is essential for substrate placement, to block particles introduced when the cavity is opened after the termination of a drying process; block the initial pressurization A stream of supercritical fluid directly faces a substrate surface at an initial stage of the drying process to prevent a pattern formed on the substrate from collapsing; to prevent particles contained in the supercritical fluid to be initially pressurized from being deposited on the substrate, a problem or reduction A deposition amount of particles; and a reduction in a working volume of the cavity due to a volume occupied by the substrate placement plate.

Another technical purpose of the present invention is: when the drying process is terminated and the cavity is opened, by disposing the substrate on the substrate placement plate so as to be positioned higher than a coupling surface between the lower casing and the upper casing, preventing The particles arranged around a sealing member on the coupling surface between the lower casing and the upper casing are due to a problem of being introduced onto the substrate due to gravity based on a height difference between the substrate and the coupling surface. 2. Problem solution

A substrate drying chamber according to the present invention includes: an upper casing; a lower casing, which can be opened and closed freely coupled to the upper casing; and a sealing member, which is arranged between the lower casing and the upper casing On a coupling surface of a substrate; a substrate placement plate coupled to a bottom surface of the lower housing and a substrate configured with an organic solvent is placed thereon; an integrated supply/discharge port formed from the bottom One side surface of the housing extends to the other side surface, is formed to point to the substrate placement plate in an intermediate area of the one side surface and the other side surface, and is configured to provide an initial pressure super A supply path of the critical fluid and a discharge path of an organic solvent and a supercritical fluid formed on the substrate after drying; and an upper supply port formed in a central area of the upper casing The middle is directed to the substrate placement plate and is configured to provide the supply path of the supercritical fluid to be dried.

In the substrate drying chamber according to the present invention, it is characterized in that the integrated supply/discharge port may include: a first pipeline formed from the one side surface of the lower housing to the middle area; a common port, which Is configured to communicate with the first pipeline in the intermediate zone and is formed to point toward the substrate placement plate; and a second pipeline is configured to communicate with the common port and the first pipeline in the intermediate zone Connected and formed to face the other side surface of the lower casing.

In the substrate drying chamber according to the present invention, it is characterized in that the first pipeline and the common port can provide the supply path of the supercritical fluid to be initially pressurized, and the common port and the second pipeline provide the organic The discharge path of the supercritical fluid of the solvent.

In the substrate drying chamber according to the present invention, it is characterized in that the substrate can be disposed on the substrate placement plate to be positioned higher than the coupling surface between the lower casing and the upper casing, and when the drying process is terminated And when the lower housing and the upper housing are open, prevent particles around the sealing member provided on the coupling surface from being introduced to the substrate due to gravity based on a height difference between the substrate and the coupling surface superior.

In the substrate drying chamber according to the present invention, it is characterized in that the substrate placement plate can block the supercritical fluid to be initially pressurized supplied through the first pipeline and the common port so as to prevent the supercritical fluid to be initially pressurized from being directly injected into the On the substrate.

The substrate drying chamber according to the present invention may further include a substrate placing board support having one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placing board and is configured When supporting the substrate placing plate, the substrate placing plate is separated from the bottom surface of the lower casing.

In the substrate drying chamber according to the present invention, it is characterized in that a first separation space existing between the bottom surface of the lower casing and the substrate placing plate due to the substrate placing plate support can induce the penetration of the The initially pressurized supercritical fluid supplied by the integrated supply/discharge port moves along a bottom surface of the substrate placement plate to gradually diffuse into a processing area where the substrate is disposed.

The substrate drying chamber according to the present invention may further include a substrate support having one end coupled to a top surface of the substrate placement plate and the other end coupled to the substrate and configured to support the substrate when supporting the substrate. The substrate is separated from the top surface of the substrate placement board.

In the substrate drying chamber according to the present invention, a second separation space existing between the top surface of the substrate placement plate and the substrate due to the substrate support exposes the bottom surface of the substrate through the The supercritical fluid to be initially pressurized supplied by the integrated supply/discharge port and the supercritical fluid to be dried supplied through the upper supply port, thereby reducing a time of the drying process. 3. Favorable effects

According to the present invention, there are the following advantageous effects: a supply path of a supercritical fluid to be initially pressurized can be provided through an integrated supply/discharge port, and a supercritical fluid that is dissolved in an organic solvent formed on the substrate after drying A discharge path can thereby increase the substrate drying efficiency by inducing a symmetrical flow when supplying and discharging the supercritical fluid to uniformly distribute and supply the supercritical fluid in a cavity and discharge the supercritical fluid from the cavity.

In addition, there is an advantageous effect that one of the drying procedures can be reduced by the following steps so as to prevent a pattern formed on the substrate from collapsing: the use of a substrate placement plate, which is essential for configuring the substrate, blocks when the cavity is opened after the drying procedure is terminated. Re-introduction of particles; and to prevent a stream of the supercritical fluid to be initially pressurized from directly facing a surface of the substrate in an initial stage of the drying process; to prevent particles that may be contained in the supercritical fluid to be initially pressurized from being deposited on the substrate ; Reduce the amount of deposited particles; and reduce a working volume of the cavity due to a volume occupied by the substrate placement plate.

Furthermore, there is the following advantageous effect: when the drying process is terminated and the cavity is opened, the substrate can be positioned higher than a coupling surface between the lower casing and the upper casing by arranging the substrate on the substrate placement plate to prevent The particles arranged around a sealing member on the coupling surface between the lower casing and the upper casing are due to a problem of being introduced onto the substrate due to gravity based on a height difference between the substrate and the coupling surface.

The specific structure and function descriptions of the embodiments of the present invention disclosed herein are only illustrative for the purpose of describing the embodiments according to the concept of the present invention, and these embodiments according to the concept of the present invention may be in various forms Implementation and should not be construed as being limited to the embodiments described herein.

The embodiments according to the concept of the present invention may be modified in various ways and may have various forms such that such embodiments will be illustrated in the drawings and described in detail herein. However, it should be understood that this is not intended to limit the embodiments according to the concept of the present invention to a specific disclosure form, but includes all modifications, equivalents, and alternatives falling within the spirit and scope of the present invention.

The terms first, second, and the like can be used to describe various components, but these components should not be limited by these terms. These terms can only be used for the purpose of distinguishing one component from another component, and for example, when departing from the scope of the present invention, a first component can be called a second component and similarly, a second component can also be called For the first component.

When a component is referred to as being “connected” or “coupled” to another component, it can be directly connected or coupled to another component, but it should be understood that another component may exist between the component and the other component. In contrast, when a component is referred to as being “directly connected” or “directly coupled” to another component, it should be understood that another component may not exist between the component and the other component. Other expressions describing the relationship between components should also be explained as described above, that is, "between" and "just between" or "adjacent to" and "directly adjacent to ".

The terms used herein are only used for the purpose of describing specific embodiments and are not intended to limit the present invention. Unless the context clearly stipulates otherwise, the singular form includes the plural form. In this specification, the terms "include", "include", "have" or the like are used to designate the existence of a feature, a number, a step, an operation, a component, an element, or a combination thereof described herein. And it should be understood that they do not preclude the existence or increase of the probability of one or more other features, numbers, steps, operations, components, elements, or combinations thereof.

Unless otherwise defined, all terms (including technical or scientific terms) used herein have the same meanings as those commonly understood by the skilled person to which the present invention belongs. A general term defined in a dictionary should be interpreted as having a consistent meaning in the context of the related technology and will not be interpreted as having an ideal or excessive formal meaning unless it is clearly defined in the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 3 is a diagram showing a substrate drying chamber according to an embodiment of the present invention, and FIG. 4 is a diagram showing a diffusion path of a supercritical fluid to be initially pressurized according to an embodiment of the present invention Fig. 5 is a diagram showing a diffusion path of a supercritical fluid to be dried according to an embodiment of the present invention, and Fig. 6 is a diagram showing a diffusion path of an organic solvent according to an embodiment of the present invention A diagram of a discharge path of the supercritical fluid, and FIG. 7 is a diagram used to describe the principle of preventing particles from flowing into a substrate when a drying process is terminated and the lower casing and an upper casing are opened. The particles are present on a sealing component arranged on a coupling surface between the upper casing and the lower casing and are present around the sealing component.

3-7, a substrate drying chamber 1 according to an embodiment of the present invention includes an upper housing 10, a lower housing 20, a sealing member 30, a substrate placement plate 40, and an integrated supply/discharge Port 50, an upper supply port 60, a substrate placement board support 70, a substrate support 80, and a housing driver 90.

The upper casing 10 and the lower casing 20 can be freely coupled to each other and provide a space for performing a drying process. For example, the upper housing 10 and the lower housing 20 may each be constructed to have a cylindrical shape, but the invention is not limited thereto. As described below, the upper supply port 60 is formed in the upper housing 10 and the integrated supply/discharge port 50 is formed in the lower housing 20.

The sealing member 30 is disposed on a coupling surface C between the lower casing 20 and the upper casing 10 and maintains the airtightness of the coupling surface C between the lower casing 20 and the upper casing 10 to dry the substrate 1 One of the internal areas is isolated from the outside.

For example, as shown in FIG. 7 for describing the principle of preventing particles from flowing onto a substrate W, the particles exist on the sealing member 30 provided on the coupling surface C between the upper housing 10 and the lower housing 20 and Exist around the sealing member 30, and when a drying process is terminated and the lower casing 20 and the upper casing 10 are opened, the substrate W can be arranged on the substrate placement plate 40 so as to be positioned higher than the lower casing 20 and the upper casing 10 When the drying process is terminated and the lower casing 20 and the upper casing 10 are opened, the substrate drying chamber 1 may be configured to prevent particles from being attributed to the coupling surface C between the substrate W and the coupling surface C. The gravity of the height difference flows into the substrate W, in which particles exist around the sealing member 30 provided on the coupling surface C.

The substrate placement board 40 is coupled to a bottom surface 22 of the lower casing 20 and is a component on which a substrate W (an organic solvent is formed on the substrate W) is disposed.

For example, a first line 510 and a common port 520 that form an integrated supply/discharge port 50 supply a supercritical fluid to be initially pressurized by the substrate placement plate 40 to prevent direct injection onto the substrate W.

More specifically, as shown in Fig. 4 showing a diffusion path of the supercritical fluid to be initially pressurized and Fig. 6 showing a discharge path of a supercritical fluid dissolved in an organic solvent, the following steps can be performed Reducing the time of the drying process makes it possible to prevent the pattern formed on the substrate W from collapsing: Use the substrate placement plate 40, which is one of the targets of the drying process and essential for arranging the substrate W, to block the opening of the substrate drying chamber 1 after the drying process is terminated The particles to be re-introduced and thereby block the flow of the supercritical fluid to be initially pressurized directly face a surface of the substrate W at an initial stage of the drying process; prevent the particles that may be contained in the supercritical fluid to be initially pressurized from being deposited on the substrate W One problem is to reduce the amount of deposited particles; and to reduce the working volume of the substrate drying chamber 1 due to a volume occupied by the substrate placement plate 40.

The integrated supply/discharge port 50 is formed to extend from one side surface 24 to the other side surface 26 of the lower housing 20, and is formed to be positioned toward the substrate from an intermediate region 28 of one side surface 24 and the other side surface 26板40. The integrated supply/discharge port 50 is a component for providing a supply path of the supercritical fluid to be initially pressurized and a discharge path of the supercritical fluid in which the organic solvent formed on the substrate W is dissolved after drying.

Through an integrated supply/discharge port 50, a supply path of the supercritical fluid to be initially pressurized and a discharge path of the supercritical fluid dissolved in the organic solvent formed on the substrate W after drying are provided, so that the following effects are present: When the supercritical fluid is supplied and discharged, a symmetrical flow is induced to uniformly distribute and supply the supercritical fluid in the substrate drying chamber 1 and discharge the supercritical fluid from the substrate drying chamber 1 to increase the substrate drying efficiency.

For example, the integrated supply/discharge port 50 includes: a first pipeline 510, which is formed from a side surface 24 of the lower housing 20 to a middle region 28; a common port 520, which is formed to communicate with the first line in the middle region 28 The pipeline 510 communicates and points to the substrate placement plate 40; and a second pipeline 530, which is configured to communicate with the common port 520 and the first pipeline 510 in the intermediate region 28 and is formed to face the other side surface of the lower housing 20 26. The first pipeline 510 and the common port 520 can be configured to provide a supply path for the supercritical fluid to be initially pressurized, and the common port 520 and the second pipeline 530 can be configured to provide discharge of the supercritical fluid dissolved in organic solvent path.

The upper supply port 60 is formed as a component in a central area of the upper casing 10 that points to the substrate placement plate 40 to provide a supply path for the supercritical fluid to be dried.

The substrate placement board support 70 has one end coupled to the bottom surface 22 of the lower housing 20 and the other end thereof is coupled to the substrate placement board 40 and connects the substrate placement board 40 and the lower housing 20 when the substrate placement board 40 is supported. The bottom surface 22 is separated from one component.

For example, a first separation space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 due to the substrate placement plate support 70 may perform the following function: by allowing the integrated supply/discharge The supercritical fluid to be initially pressurized supplied by the port 50 moves along a bottom surface of the substrate placement plate 40 to cause the supercritical fluid to be initially pressurized to gradually diffuse into a processing area in which the substrate W is disposed.

The substrate support 80 is a component whose one end is coupled to a top surface of the substrate placement board 40 and the other end is coupled to the substrate W and separates the substrate W from the top surface of the substrate placement board 40 when supporting the substrate W.

For example, a second separation space R2 existing between the top surface of the substrate placement plate 40 and the substrate W due to the substrate support 80 performs the following function: by exposing one of the bottom surfaces of the substrate W to the integrated supply /The supercritical fluid to be initially pressurized supplied by the discharge port 50 and the supercritical fluid to be dried supplied through the upper supply port 60 to reduce the time of the drying process.

The housing driver 90 is used to open or close one of the upper housing 10 and the lower housing 20. After the drying process is terminated, the lower housing 20 is driven to separate from the upper housing 10 to open the substrate drying chamber 1, or when the drying process starts, the housing driver 90 may perform the following functions: drive the lower housing 20 and remove the lower housing 20 is coupled to the upper housing 10 to close the substrate drying chamber 1. Although the housing driver 90 has been shown as driving the lower housing 20 in the drawing, this is only an example, and the housing driver 90 can be configured to drive the upper housing 10.

For example, the supercritical fluid to be initially pressurized and the supercritical fluid to be dried may include carbon dioxide (CO ₂ ), and the organic solvent may include alcohol, but the present invention is not limited thereto. As a specific example, the alcohol may include methanol, ethanol, 1-propanol, 2-propanol (isopropanol (IPA)), and 1-butanol, but the present invention is not limited thereto.

For example, according to the supercritical drying technology performed in the substrate drying chamber 1 according to an embodiment of the present invention, CO ₂ in a supercritical state is supplied to the substrate W, and one surface of the substrate W is in the substrate drying chamber 1 Wetting by an organic solvent (such as alcohol or the like) dissolves the alcohol on the substrate W in a supercritical CO ₂ fluid. Then, the alcohol-dissolved supercritical CO ₂ fluid is gradually discharged from the substrate drying chamber 1 so that the substrate W can be dried without a pattern collapse.

1: Substrate drying chamber 10: Upper shell 20: Lower shell 22: bottom surface 24: side surface 26: side surface 28: Middle area 30: Sealing parts 40: substrate placement board 50: Integrated supply/drain port 60: Upper supply port 70: substrate placement board support 80: substrate support 90: housing drive 410: high pressure chamber 420: lower main body 422: Down Supply Port 426: Drain Port 430: upper body 510: The first pipeline 520: Common Port 530: The second pipeline C: Coupling surface R1: The first separation space R2: Second separation space W: substrate

FIG. 1 is a diagram showing a pattern collapse phenomenon that occurs during a substrate drying process according to the prior art;

Figure 2 shows a diagram of a conventional substrate drying chamber;

FIG. 3 is a diagram showing a substrate drying chamber according to an embodiment of the present invention;

4 is a diagram showing a diffusion path of a supercritical fluid to be initially pressurized according to an embodiment of the present invention;

5 is a diagram showing a diffusion path of a supercritical fluid to be dried in an embodiment of the present invention;

6 is a diagram showing a discharge path of a supercritical fluid with an organic solvent dissolved in an organic solvent according to an embodiment of the present invention; and

Figure 7 is a diagram for describing the principle of preventing particles from flowing into one of a substrate when a drying process is terminated and a lower shell and an upper shell are opened, wherein the particles exist in the upper shell and the lower shell A coupling surface therebetween is on a sealing component and exists around the sealing component.

1: Substrate drying chamber

10: Upper shell

20: Lower shell

22: bottom surface

24: side surface

26: side surface

28: Middle area

30: Sealing parts

40: substrate placement board

50: Integrated supply/drain port

60: Upper supply port

70: substrate placement board support

80: substrate support

90: housing drive

510: The first pipeline

520: Common Port

530: second pipeline

C: Coupling surface

R1: The first separation space

R2: Second separation space

W: substrate

Claims (8)

A substrate drying chamber, comprising: an upper shell; a lower shell, which can be opened and closed freely coupled to the upper shell; a sealing component, which is arranged between the lower shell and the upper shell On the coupling surface; a substrate placement plate coupled to a bottom surface of the lower casing and a substrate disposed on it with an organic solvent; an integrated supply/discharge port formed from the lower casing One side surface extends to the other side surface, is formed to point to the substrate placement plate in an intermediate region of the one side surface and the other side surface, and is configured to provide a supercritical fluid to be initially pressurized A supply path and a discharge path of an organic solvent and a supercritical fluid formed on the substrate after drying; and an upper supply port formed to point in a central area of the upper casing The substrate placement plate is configured to provide the supply path of the supercritical fluid to be dried, wherein the integrated supply/discharge port includes: a first pipeline formed from the one side surface of the lower housing to the Intermediate zone; a common port configured to communicate with the first pipeline in the intermediate zone and formed to point to the substrate placement plate; and a second pipeline configured to communicate with the substrate in the intermediate zone The common port communicates with the first pipeline and is formed to face the other side surface of the lower casing. The substrate drying chamber of claim 1, wherein: the first pipeline and the common port provide the supply path of the supercritical fluid to be initially pressurized; and the common port and the second pipeline provide the organic solvent dissolved in the The discharge path of the supercritical fluid. The substrate drying chamber of claim 1, wherein: the substrate is disposed on the substrate placement plate to be positioned higher than the coupling surface between the lower casing and the upper casing; and when the drying process is terminated and the When the lower shell and the upper shell are opened, the particles around the sealing member arranged on the coupling surface are prevented from being introduced onto the substrate due to gravity according to a height difference between the substrate and the coupling surface. The substrate drying chamber of claim 2, wherein the substrate placement plate blocks the supercritical fluid to be initially pressurized supplied through the first pipeline and the common port so as to prevent the supercritical fluid to be initially pressurized from being directly injected into the substrate superior. For example, the substrate drying chamber of claim 1, which further includes a substrate placing board support having one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placing board and It is configured to separate the substrate placing plate from the bottom surface of the lower housing when the substrate placing plate is supported. Such as the substrate drying chamber of claim 5, where the substrate is placed on the board support due to the presence of A first separation space between the bottom surface of the lower casing and the substrate placement plate causes the initially pressurized supercritical fluid supplied through the integrated supply/discharge port to move along a bottom surface of the substrate placement plate To gradually diffuse into a processing area where the substrate is disposed. Such as the substrate drying chamber of claim 1, which further includes a substrate support having one end coupled to a top surface of the substrate placement plate and the other end coupled to the substrate and is configured to support the substrate Separate the substrate from the top surface of the substrate placement board when the substrate is installed. Such as the substrate drying chamber of claim 7, wherein a second separation space existing between the top surface of the substrate placement plate and the substrate due to the substrate support exposes the bottom surface of the substrate through the The supercritical fluid to be initially pressurized supplied by the integrated supply/discharge port and the supercritical fluid to be dried supplied through the upper supply port, thereby reducing a time of the drying process.

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