TWI748445B - Substrate drying chamber - Google Patents

Substrate drying chamber Download PDF

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TWI748445B
TWI748445B TW109115671A TW109115671A TWI748445B TW I748445 B TWI748445 B TW I748445B TW 109115671 A TW109115671 A TW 109115671A TW 109115671 A TW109115671 A TW 109115671A TW I748445 B TWI748445 B TW I748445B
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substrate
supercritical fluid
drying
fluid
initial pressurization
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TW202107595A (en
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申熙鏞
尹炳文
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韓商無盡電子有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67126Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

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  • Engineering & Computer Science (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Solid Materials (AREA)

Abstract

A substrate drying chamber according to the present invention includes an upper housing, a lower housing, a substrate placement plate, an upper supply port configured to provide a supply path of a supercritical fluid for drying, an integrated supply and discharge port configured to provide a supply path of a supercritical fluid for initial pressurization and a discharge path of a mixed fluid in which an organic solvent is dissolved in a supercritical fluid after drying by supply of the supercritical fluid for drying, a stirrer configured to stir the supercritical fluid for initial pressurization and the supercritical fluid for drying, and a heating member which is operated when the supercritical fluid for initial pressurization is supplied and the mixed fluid is discharged and heats the supercritical fluid for initial pressurization and the mixed fluid.

Description

基板乾燥腔Substrate drying chamber

本發明係關於一種基板乾燥腔,且更具體而言,本發明係關於一種基板乾燥腔,其中藉由提高一超臨界流體及一有機溶劑之一混合速度來增加基板產量,藉由引導該超臨界流體維持一溫度在一臨界點或更大來保證一乾燥程序之均勻性,解決因歸因於由在引入(初始加壓)一初始加壓用超臨界流體至一乾燥腔中之一程序期間發生之一壓降引起之一冷卻現象液化或汽化該初始加壓用超臨界流體而引起一基板上之顆粒污染之一問題,解決在排放(減壓)其中使異丙醇(IPA)溶解於一乾燥用超臨界流體中之一混合流體時該混合流體之相分離歸因於一冷卻效應而引起該基板上之顆粒污染或歸因於該混合流體之一表面張力而引起形成於該基板上之一圖案塌陷之一問題,且藉由引導該超臨界流體對稱流動且藉由供應及排放該超臨界流體均勻分散於一腔內部來提高該基板之乾燥效率,且在完成一乾燥程序之後打開該腔時,防止微粒引入至該腔內部之該基板上。The present invention relates to a substrate drying chamber, and more specifically, the present invention relates to a substrate drying chamber in which the output of substrate is increased by increasing the mixing speed of a supercritical fluid and an organic solvent, and by guiding the supercritical fluid The critical fluid maintains a temperature at a critical point or greater to ensure the uniformity of a drying process. The solution is due to the process of introducing (initial pressurization) a supercritical fluid for initial pressurization into a drying chamber During this period, a pressure drop causes a cooling phenomenon to liquefy or vaporize the supercritical fluid used for initial pressurization, which causes particle contamination on a substrate, which solves the problem of dissolving isopropyl alcohol (IPA) in the discharge (decompression) When a mixed fluid in a supercritical fluid for drying, the phase separation of the mixed fluid is due to a cooling effect that causes particle contamination on the substrate or due to a surface tension of the mixed fluid to form on the substrate The above pattern collapse is a problem, and the drying efficiency of the substrate is improved by guiding the supercritical fluid to flow symmetrically and by supplying and discharging the supercritical fluid evenly dispersed in a cavity, and after completing a drying process When the cavity is opened, particles are prevented from being introduced onto the substrate inside the cavity.

一半導體器件之一製程包含各種程序,諸如一微影程序、一蝕刻程序、一離子植入程序及其類似者。在完成各程序之後下一程序開始之前,執行一清潔程序及一乾燥程序,其中移除殘留於一晶圓之一表面上之雜質或殘留物以清潔晶圓之表面。A manufacturing process of a semiconductor device includes various processes, such as a lithography process, an etching process, an ion implantation process, and the like. After each process is completed and before the next process starts, a cleaning process and a drying process are performed, in which impurities or residues remaining on a surface of a wafer are removed to clean the surface of the wafer.

例如,在一蝕刻程序之後的一晶圓之一清潔程序中,將一清潔用化學溶液供應至晶圓之一表面且接著將去離子水(DIW)供應至晶圓之表面以執行一清洗程序。在執行清洗程序之後,執行其中移除殘留於晶圓之表面上之DIW以乾燥晶圓之一乾燥程序。For example, in a cleaning process of a wafer after an etching process, a cleaning chemical solution is supplied to a surface of the wafer and then deionized water (DIW) is supplied to the surface of the wafer to perform a cleaning process . After the cleaning process is performed, a drying process is performed in which DIW remaining on the surface of the wafer is removed to dry the wafer.

藉由用異丙醇(IPA)替換一晶圓上之DIW來乾燥一晶圓之一技術稱為(例如)執行乾燥程序之一方法。A technique for drying a wafer by replacing the DIW on a wafer with isopropyl alcohol (IPA) is called, for example, a method of performing a drying process.

然而,根據習知乾燥技術,如圖1中所繪示,當執行乾燥時,出現形成於一晶圓上之一圖案歸因於液體IPA之表面張力而塌陷之一問題。However, according to the conventional drying technology, as shown in FIG. 1, when the drying is performed, a problem occurs that a pattern formed on a wafer collapses due to the surface tension of the liquid IPA.

為解決上述問題,已提出其中表面張力變為零之一超臨界乾燥技術。In order to solve the above problems, a supercritical drying technology in which the surface tension becomes zero has been proposed.

根據超臨界乾燥技術,藉由將一超臨界狀態中之二氧化碳供應至一腔中之一晶圓(其一表面以IPA潤濕)來使晶圓上之IPA溶解於一超臨界二氧化碳(CO2 )流體中。其後,自腔逐漸排放其中溶解IPA之超臨界二氧化碳(CO2 )流體,使得可乾燥晶圓且圖案不塌陷。According to the supercritical drying technology, the IPA on the wafer is dissolved in a supercritical carbon dioxide (CO 2 ) In the fluid. Thereafter, the supercritical carbon dioxide (CO 2 ) fluid in which the IPA is dissolved is gradually discharged from the cavity, so that the wafer can be dried and the pattern does not collapse.

同時,存在以下問題:一超臨界流體在一高壓處儲存於設置於一乾燥腔外部之一超臨界流體產生器中,一冷卻現象可由在透過一管及一閥將超臨界流體引入(初始加壓)至乾燥腔中之一程序期間在閥及管之一連接部分處發生之一壓降引起,且超臨界流體可在上述引入程序期間液化或汽化以藉此在一基板上引起顆粒污染。具體而言,當提高一加壓速度時,存在無法僅藉由使用一簡單熱交換器維持管之一溫度來將熱充分傳遞至超臨界流體之一問題。At the same time, there are the following problems: a supercritical fluid is stored at a high pressure in a supercritical fluid generator set outside a drying chamber, a cooling phenomenon can be introduced through a pipe and a valve (initial addition) During a process in the drying chamber, a pressure drop occurs at a connecting portion of the valve and the pipe, and the supercritical fluid can be liquefied or vaporized during the above-mentioned introduction process to thereby cause particle contamination on a substrate. Specifically, when a pressurization speed is increased, there is a problem that it is impossible to sufficiently transfer heat to the supercritical fluid by only maintaining the temperature of one of the tubes using a simple heat exchanger.

此外,在乾燥腔中,當排放(減壓)其中使IPA溶解於一乾燥用超臨界流體中之一混合流體時,混合流體之相分離可歸因於一冷卻效應而引起基板上之顆粒污染或歸因於混合流體之一表面張力而引起形成於基板上之一圖案塌陷。具體而言,存在以下問題:當歸因於大於或等於一臨界點之一高壓區域中之快速絕熱膨脹而使一溫度及一壓力降低至臨界點或更小時,可相分離呈一單相之混合流體以引起基板上之乾燥缺陷(諸如顆粒污染)且亦引起基板之圖案塌陷。In addition, in the drying chamber, when a mixed fluid in which IPA is dissolved in a supercritical fluid for drying is discharged (depressurized), the phase separation of the mixed fluid can be attributed to a cooling effect that causes particle contamination on the substrate Or a pattern formed on the substrate collapses due to the surface tension of a mixed fluid. Specifically, there is the following problem: when a temperature and a pressure are lowered to a critical point or less due to rapid adiabatic expansion in a high pressure region greater than or equal to a critical point, the phase separation can be a single-phase mixture The fluid causes drying defects (such as particle contamination) on the substrate and also causes the pattern of the substrate to collapse.

圖2繪示韓國專利公開申請案第10-2017-0137243號中所揭示之一基板處理腔,該案係關於使用此一超臨界流體之一基板處理裝置之一相關技術。FIG. 2 shows a substrate processing chamber disclosed in Korean Patent Publication Application No. 10-2017-0137243, which is related to a related technology of a substrate processing apparatus using this supercritical fluid.

參考圖2,在一超臨界乾燥程序期間移除IPA之一程序中,可將IPA引入至一耦合表面上,耦合表面與構成一高壓腔410之一上本體430及一下本體420接觸。引入至上本體430及下本體420之耦合表面上之IPA變為微粒且微粒累積於上本體430及下本體420之耦合表面周圍。Referring to FIG. 2, in a process of removing IPA during a supercritical drying process, IPA can be introduced onto a coupling surface that contacts the upper body 430 and the lower body 420 that constitute a high-pressure cavity 410. The IPA introduced on the coupling surface of the upper body 430 and the lower body 420 becomes particles and the particles are accumulated around the coupling surface of the upper body 430 and the lower body 420.

在完成超臨界乾燥程序之後,打開腔以將一經處理基板卸載至外部。在此情況中,上本體430及下本體420之耦合表面周圍之微粒可歸因於腔之內部與外部之間的一壓差而引入至腔中。After the supercritical drying process is completed, the cavity is opened to unload a processed substrate to the outside. In this case, the particles around the coupling surfaces of the upper body 430 and the lower body 420 can be introduced into the cavity due to a pressure difference between the inside and the outside of the cavity.

根據韓國專利公開申請案第10-2017-0137243號,由於基板經定位於低於上本體430及下本體420之耦合表面之一位階處,因此很可能在其中將上本體430及下本體420之耦合表面周圍之微粒引入至腔中之程序中歸因於重力而將一些微粒引入至基板上。According to Korean Patent Publication Application No. 10-2017-0137243, since the substrate is positioned at a level lower than the coupling surface of the upper body 430 and the lower body 420, it is likely that the upper body 430 and the lower body 420 are In the process of introducing particles around the coupling surface into the cavity, some particles are introduced onto the substrate due to gravity.

如上文所描述,引入至基板上之微粒引起程序中之缺陷。因此,為防止引入微粒,需要在上本體430及下本體420之耦合表面周圍另外設置一阻障膜。因此,存在裝置之總體結構變複雜之一問題。As described above, the particles introduced onto the substrate cause defects in the process. Therefore, in order to prevent the introduction of particles, it is necessary to additionally provide a barrier film around the coupling surface of the upper body 430 and the lower body 420. Therefore, there is a problem that the overall structure of the device becomes complicated.

此外,根據包含韓國專利公開申請案第10-2017-0137243號之相關技術,由於用於供應一初始加壓用超臨界流體之一下供應口422及用於在乾燥之後排出一超臨界流體之一排出口426未定位於下本體420之中間處,因此當供應及排放超臨界流體時,超臨界流體非對稱流動,且因此難以使超臨界流體均勻分散於腔內部以供應及排放。因此,出現乾燥效率降低之一問題。In addition, according to the related technology including Korean Patent Application Publication No. 10-2017-0137243, one of the lower supply ports 422 is used to supply a supercritical fluid for initial pressurization and one of the lower supply ports is used to discharge a supercritical fluid after drying. The discharge port 426 is not positioned in the middle of the lower body 420, so when the supercritical fluid is supplied and discharged, the supercritical fluid flows asymmetrically, and it is therefore difficult to uniformly disperse the supercritical fluid inside the cavity for supply and discharge. Therefore, there is a problem of reduced drying efficiency.

同時,在使用超臨界流體之乾燥程序期間供應之超臨界流體及IPA之一混合速度係影響晶圓產量之一重要因數。At the same time, the mixing speed of the supercritical fluid and IPA supplied during the drying process using the supercritical fluid is an important factor affecting the wafer yield.

根據包含韓國專利公開申請案第10-2017-0137243號之相關技術,儘管超臨界流體具有高溶解度及一快速擴散速率,但存在乾燥時間增加且產量降低之一問題,因為超臨界流體及IPA之混合速度無法足夠提高。According to related technologies including Korean Patent Publication Application No. 10-2017-0137243, although supercritical fluid has high solubility and a fast diffusion rate, there is a problem of increased drying time and decreased yield because of the difference between supercritical fluid and IPA The mixing speed cannot be increased sufficiently.

另外,存在無法有利保證乾燥程序之均勻性之一問題,因為此一低混合速度引起超臨界流體之一溫度難以維持在一臨界點或更大處。In addition, there is a problem that the uniformity of the drying process cannot be advantageously ensured, because such a low mixing speed makes it difficult to maintain a temperature of the supercritical fluid at a critical point or greater.

[相關技術文件] [專利文件] 韓國專利公開申請案第10-2017-0137243號(2017年12月13日公開,名稱:SUBSTRATE PROCESSING APPARATUS AND METHOD)[Related technical documents] [Patent Document] Korean Patent Publication Application No. 10-2017-0137243 (published on December 13, 2017, title: SUBSTRATE PROCESSING APPARATUS AND METHOD)

技術問題technical problem

本發明旨在提供一種技術,其中藉由提高一超臨界流體及一有機溶劑之一混合速度來增加基板產量,且藉由引導超臨界流體維持其之一溫度在一臨界點或更大處來保證一乾燥程序之均勻性。The present invention aims to provide a technique in which the yield of substrates is increased by increasing the mixing speed of a supercritical fluid and an organic solvent, and the temperature of one of the supercritical fluids is maintained at a critical point or greater by guiding the supercritical fluid Ensure the uniformity of a drying process.

本發明亦旨在提供一種用於解決以下問題之技術:在其中透過一管及一閥將一超臨界流體自設置於一乾燥腔外部之一超臨界流體產生器引入(初始加壓)至乾燥腔中之一程序期間,超臨界流體由在閥及管之一連接部分處發生之一壓降引起之一冷卻現象液化或汽化以藉此引起一基板上之顆粒污染。The present invention also aims to provide a technology for solving the following problems: in which a supercritical fluid is introduced (initial pressurization) to the drying from a supercritical fluid generator arranged outside a drying chamber through a tube and a valve During a process in the cavity, the supercritical fluid is liquefied or vaporized by a pressure drop occurring at a connecting part of the valve and the pipe, thereby causing particle contamination on a substrate.

本發明亦旨在提供一種用於解決以下問題之技術:在一乾燥腔中,當排放(減壓)其中使異丙醇(IPA)溶解於一乾燥用超臨界流體中之一混合流體時,混合流體之相分離歸因於一冷卻效應而引起一基板上之顆粒污染或歸因於混合流體之一表面張力而引起形成於基板上之一圖案塌陷。The present invention also aims to provide a technology for solving the following problems: in a drying chamber, when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid for drying is discharged (reduced pressure), The phase separation of the mixed fluid is due to a cooling effect that causes particle contamination on a substrate or due to a surface tension of the mixed fluid that causes a pattern formed on the substrate to collapse.

本發明亦旨在提供一種技術,其中一單個整合式供應及排放口提供一初始加壓用超臨界流體之一供應路徑及其中溶解在乾燥之後形成於一基板上之一有機溶劑之一超臨界流體之一排放路徑,使得超臨界流體經引導以對稱流動且經供應及排放以均勻分散於一腔內部以導致基板之乾燥效率提高。The present invention also aims to provide a technology in which a single integrated supply and discharge port provides a supply path of a supercritical fluid for initial pressurization and a supercritical fluid dissolved in an organic solvent formed on a substrate after drying. One of the fluid discharge paths allows the supercritical fluid to be guided to flow symmetrically and to be supplied and discharged to be evenly dispersed in a cavity to increase the drying efficiency of the substrate.

本發明亦旨在提供一種技術,其中在完成一乾燥程序之後打開一腔時重新引入之微粒由一基板放置板(其係放置一基板所必需的)阻擋,防止一初始加壓用超臨界流體在乾燥程序開始時直接朝向基板之一表面流動以防止形成於基板上之一圖案塌陷,防止可含於初始加壓用超臨界流體中之微粒累積於基板上或減少微粒之一累積量,歸因於一容積由基板放置板佔據而減小腔之一工作容積,且縮短一乾燥程序時間。The present invention also aims to provide a technique in which particles re-introduced when opening a cavity after completing a drying process are blocked by a substrate placement plate (which is necessary for placing a substrate) to prevent a supercritical fluid for initial pressurization Flow directly toward a surface of the substrate at the beginning of the drying process to prevent a pattern formed on the substrate from collapsing, prevent particles that can be contained in the supercritical fluid for initial pressure from accumulating on the substrate or reduce the accumulation of particles. Because a volume is occupied by the substrate placement plate, a working volume of the cavity is reduced, and a drying process time is shortened.

本發明亦旨在提供一種技術,其中將一基板放置於一基板放置板上以待定位於高於一上外殼及一下外殼之一耦合表面之一位階處,使得當完成一乾燥程序且接著打開一腔時,防止經設置於上外殼及下外殼之耦合表面上之一密封部分周圍的微粒歸因於基板與耦合表面之間之一高度差所致的重力而被引入至基板上。問題 解決方案 The present invention also aims to provide a technique in which a substrate is placed on a substrate placement board to be positioned at a level higher than a coupling surface of an upper housing and a lower housing, so that when a drying process is completed and then a When the cavity is used, the particles arranged around a sealing part on the coupling surface of the upper casing and the lower casing are prevented from being introduced onto the substrate due to gravity caused by a height difference between the substrate and the coupling surface. Solution of the problem

根據本發明之一態樣,提供一種基板乾燥腔,其包含:一上外殼;一下外殼,其經耦合至該上外殼以打開或閉合;一基板放置板,其經耦合至該下外殼之一底面且其上放置一基板,該基板上形成一有機溶劑;一上供應口,其經形成於該上外殼上以面向該基板放置板且提供一乾燥用超臨界流體之一供應路徑;一整合式供應及排放口,其經構形以提供一初始加壓用超臨界流體之一供應路徑及一混合流體之一排放路徑,其中在藉由供應該乾燥用超臨界流體來乾燥之後,使該有機溶劑溶解於包含該初始加壓用超臨界流體及該乾燥用超臨界流體之一超臨界流體中;一攪拌器,其經構形以攪拌透過該整合式供應及排放口供應之該初始加壓用超臨界流體及透過該上供應口供應之該乾燥用超臨界流體;及一加熱部件,其係設置於該基板放置板中,在供應該初始加壓用超臨界流體且排放該混合流體時操作,且加熱該初始加壓用超臨界流體及該混合流體。According to one aspect of the present invention, there is provided a substrate drying chamber, which includes: an upper shell; a lower shell coupled to the upper shell to open or close; a substrate placement plate coupled to one of the lower shells On the bottom surface, a substrate is placed on the substrate, and an organic solvent is formed on the substrate; an upper supply port is formed on the upper shell to face the substrate placement plate and provide a supply path of a supercritical fluid for drying; an integration Type supply and discharge port, which is configured to provide a supply path of a supercritical fluid for initial pressurization and a discharge path of a mixed fluid, wherein after drying by supplying the supercritical fluid for drying, the The organic solvent is dissolved in one of the supercritical fluid including the supercritical fluid for initial pressurization and the supercritical fluid for drying; a stirrer configured to stir the initial feed supplied through the integrated supply and discharge port The supercritical fluid for pressure and the supercritical fluid for drying supplied through the upper supply port; and a heating member, which is arranged in the substrate placement plate, and supplies the supercritical fluid for initial pressure and discharges the mixed fluid Operate at time, and heat the supercritical fluid for initial pressurization and the mixed fluid.

該加熱部件可在供應該初始加壓用超臨界流體之一初始加壓時間內操作,且可將該初始加壓用超臨界流體之一溫度調整為一臨界點或更大。The heating part can be operated within an initial pressurization time of the supercritical fluid for the initial pressurization, and the temperature of one of the supercritical fluids for the initial pressurization can be adjusted to a critical point or greater.

該加熱部件可在排放該混合流體之一排放時間內操作且補償由歸因於在排放該混合流體時發生之一壓降之絕熱膨脹引起之一溫降,使得包含於該混合流體中之該乾燥用超臨界流體之一溫度可調整為一臨界點或更大。The heating element can operate within a discharge time of discharging the mixed fluid and compensate for a temperature drop caused by adiabatic expansion due to a pressure drop that occurs when the mixed fluid is discharged, so that the mixed fluid contained in the The temperature of one of the supercritical fluids for drying can be adjusted to a critical point or greater.

該攪拌器可用於提高該有機溶劑及該初始加壓用超臨界流體之一混合速度及該有機溶劑及該乾燥用超臨界流體之一混合速度。The agitator can be used to increase a mixing speed of the organic solvent and the supercritical fluid for initial pressurization and a mixing speed of the organic solvent and the supercritical fluid for drying.

該攪拌器可包含:一軸件,其透過形成於該上外殼之一中心區域中之一插入孔來插入至一腔中;一攪拌葉片,其耦合至該軸件之兩端中定位於該腔內部之一端;一驅動單元,其耦合至該軸件之該兩端中定位於該腔外部之另一端且對該軸件提供一旋轉驅動力。The agitator may include: a shaft member inserted into a cavity through an insertion hole formed in a central area of the upper casing; a stirring blade coupled to both ends of the shaft member and positioned in the cavity One end of the inner; a drive unit coupled to the other end of the shaft positioned outside the cavity among the two ends of the shaft and provides a rotational driving force to the shaft.

該基板乾燥腔可進一步包含一軸向耦合部件,其耦合至該上外殼之一外表面以軸向耦合構成該攪拌器之該軸件。複數個通孔可形成於該軸向耦合部件中以與該軸向耦合部件之一中心點間隔開,且該上供應口可具有形成於該上外殼中之複數個供應孔以與形成於該軸向耦合部件中之該複數個通孔對準。The substrate drying chamber may further include an axial coupling member coupled to an outer surface of the upper casing to axially couple the shaft member constituting the agitator. A plurality of through holes may be formed in the axial coupling part to be spaced apart from a center point of the axial coupling part, and the upper supply port may have a plurality of supply holes formed in the upper housing to be connected to the The plurality of through holes in the axial coupling part are aligned.

形成於該軸向耦合部件中之該複數個通孔可彼此對稱配置。The plurality of through holes formed in the axial coupling member may be symmetrically arranged with each other.

該整合式供應及排放口可經形成以自該下外殼之一側表面延伸至另一側表面且在該一側表面與該另一側表面之間的一中間區域中面向該基板放置板。The integrated supply and discharge port may be formed to extend from one side surface of the lower housing to the other side surface and face the substrate placement plate in an intermediate area between the one side surface and the other side surface.

該整合式供應及排放口可包含:一第一管線,其經形成以自該下外殼之該一側表面延伸至該中間區域;一共同口部分,其經形成以在該中間區域中與該第一管線連通且面向該基板放置板;及一第二管線,其經形成以在該中間區域中與該共同口部分及該第一管線連通且延伸至該下外殼之該另一側表面。The integrated supply and discharge port may include: a first pipeline formed to extend from the side surface of the lower housing to the middle area; a common port portion formed to communicate with the middle area in the middle area A first pipeline communicates and faces the substrate placement plate; and a second pipeline is formed to communicate with the common port portion and the first pipeline in the intermediate area and extends to the other side surface of the lower housing.

該第一管線及該共同口部分可提供該初始加壓用超臨界流體之該供應路徑,且該共同口部分及該第二管線可提供其中溶解該有機溶劑之該超臨界流體之該排放路徑。The first pipeline and the common port portion can provide the supply path of the supercritical fluid for initial pressurization, and the common port portion and the second pipeline can provide the discharge path of the supercritical fluid in which the organic solvent is dissolved .

該基板乾燥腔可進一步包含設置於該下外殼及該上外殼之一耦合表面上之一密封部分。該基板可經放置於該基板放置板上以定位於高於該下外殼及該上外殼之該耦合表面之一位階處,且當完成一乾燥程序且接著打開該下外殼及該上外殼時,可防止設置於該耦合表面上之該密封部分周圍之微粒歸因於該基板與該耦合表面之間的一高度差所致之重力而引入至該基板上。The substrate drying chamber may further include a sealing part disposed on a coupling surface of the lower casing and the upper casing. The substrate can be placed on the substrate placement board to be positioned higher than a level of the coupling surface of the lower casing and the upper casing, and when a drying process is completed and then the lower casing and the upper casing are opened, The particles around the sealing portion provided on the coupling surface can be prevented from being introduced onto the substrate due to gravity caused by a height difference between the substrate and the coupling surface.

透過該第一管線及該共同口部分供應之該初始加壓用超臨界流體可由該基板放置板阻擋以防止直接噴灑於該基板上。The initial pressurizing supercritical fluid supplied through the first pipeline and the common port portion can be blocked by the substrate placement plate to prevent direct spraying on the substrate.

該基板乾燥腔可進一步包含一基板放置板支撐件,其使一端耦合至該下外殼之該底面及使另一端耦合至該基板放置板且在支撐該基板放置板時分離該基板放置板與該下外殼之該底面。The substrate drying chamber may further include a substrate placement board support member, which has one end coupled to the bottom surface of the lower housing and the other end coupled to the substrate placement board, and separates the substrate placement board and the substrate placement board when supporting the substrate placement board. The bottom surface of the lower shell.

歸因於該基板放置板支撐件而存在於該下外殼之該底面與該基板放置板之間的一第一分離空間可用於引導透過該整合式供應及排放口供應之該初始加壓用超臨界流體沿該基板放置板之一下表面移動且逐漸擴散至其中放置該基板之一處理區域中。A first separation space existing between the bottom surface of the lower housing and the substrate placement plate due to the substrate placement plate support can be used to guide the initial pressurization supercharger supplied through the integrated supply and discharge port The critical fluid moves along a lower surface of the substrate placement plate and gradually diffuses into a processing area in which the substrate is placed.

該基板乾燥腔可進一步包含一基板支撐件,其使一端耦合至該基板放置板之一上表面及使另一端耦合至該基板且在支撐該基板時分離該基板與該基板放置板之該上表面。The substrate drying chamber may further include a substrate support, which has one end coupled to an upper surface of the substrate placement plate and the other end is coupled to the substrate and separates the substrate from the upper surface of the substrate placement plate when supporting the substrate. surface.

歸因於該基板支撐件而存在於該基板放置板之該上表面與該基板之間的一第二分離空間可用於使該基板之一下表面暴露於透過該整合式供應及排放口供應之該初始加壓用超臨界流體及透過該上供應口供應之該乾燥用超臨界流體以縮短一乾燥程序時間。有利發明效應 A second separation space existing between the upper surface of the substrate placement plate and the substrate due to the substrate support can be used to expose a lower surface of the substrate to the supply through the integrated supply and discharge port The supercritical fluid for initial pressurization and the supercritical fluid for drying supplied through the upper supply port can shorten a drying process time. Beneficial invention effect

根據本發明,可藉由提高一超臨界流體及一有機溶劑之一混合速度來增加基板產量,且可藉由引導該超臨界流體維持其之一溫度在一臨界點或更大處來保證一乾燥程序之均勻性。According to the present invention, the substrate yield can be increased by increasing a mixing speed of a supercritical fluid and an organic solvent, and a temperature can be ensured by guiding the supercritical fluid to maintain a temperature at a critical point or greater. Uniformity of the drying process.

根據本發明,可解決以下問題:在其中透過一管及一閥將一超臨界流體自設置於一乾燥腔外部之一超臨界流體產生器引入(初始加壓)至乾燥腔中之一程序期間,超臨界流體由在閥及管之一連接部分處發生之一壓降引起之一冷卻現象液化或汽化以藉此導致一基板上之顆粒污染。According to the present invention, the following problem can be solved: during a process in which a supercritical fluid is introduced (initial pressurization) into the drying chamber from a supercritical fluid generator arranged outside a drying chamber through a pipe and a valve The supercritical fluid is liquefied or vaporized by a pressure drop occurring at a connecting part of the valve and the pipe, thereby causing particle contamination on a substrate.

此外,可解決以下問題:在一乾燥腔中,當排放(減壓)其中使異丙醇(IPA)溶解於一乾燥用超臨界流體中之一混合流體時,混合流體之相分離歸因於一冷卻效應而引起一基板上之顆粒污染或歸因於混合流體之一表面張力而引起形成於基板上之一圖案塌陷。In addition, the following problem can be solved: in a drying chamber, when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid for drying is discharged (decompressed), the phase separation of the mixed fluid is due to A cooling effect causes particle contamination on a substrate or a pattern formed on the substrate collapses due to a surface tension of the mixed fluid.

此外,一單個整合式供應及排放口可提供一初始加壓用超臨界流體之一供應路徑及其中溶解在乾燥之後形成於一基板上之一有機溶劑之一超臨界流體之一排放路徑,使得超臨界流體可經引導以對稱流動且可經供應及排放以均勻分散於一腔內部以導致基板之乾燥效率提高。In addition, a single integrated supply and discharge port can provide a supply path of a supercritical fluid for initial pressurization and a discharge path of a supercritical fluid that is dissolved in an organic solvent and formed on a substrate after drying, so that The supercritical fluid can be guided to flow symmetrically and can be supplied and discharged to be evenly dispersed in a cavity to increase the drying efficiency of the substrate.

此外,在完成一乾燥程序之後打開一腔時重新引入之微粒可由一基板放置板(其係放置一基板所必需的)阻擋,可防止一初始加壓用超臨界流體在乾燥程序開始時直接朝向基板之一表面流動以防止形成於基板上之一圖案塌陷,可防止可含於初始加壓用超臨界流體中之微粒累積於基板上或可減少微粒之一累積量,可歸因於一容積由基板放置板佔據而減小腔之一工作容積,且可縮短一乾燥程序時間。In addition, particles re-introduced when opening a chamber after completing a drying process can be blocked by a substrate placement plate (which is necessary for placing a substrate), which prevents an initial pressurizing supercritical fluid from directly facing at the beginning of the drying process Flow on a surface of the substrate to prevent a pattern formed on the substrate from collapsing, to prevent particles contained in the supercritical fluid for initial pressurization from accumulating on the substrate or to reduce the accumulation of particles, which can be attributed to a volume Occupying by the substrate placement plate reduces the working volume of one of the chambers, and can shorten a drying process time.

此外,可將一基板放置於一基板放置板上以定位於高於一上外殼及一下外殼之一耦合表面之一位階處,使得當完成一乾燥程序且接著打開一腔時,可防止設置於上外殼及下外殼之耦合表面上之一密封部分周圍之微粒歸因於基板與耦合表面之間的一高度差所致之重力而引入至基板上。In addition, a substrate can be placed on a substrate placement board to be positioned at a level higher than a coupling surface of an upper housing and a lower housing, so that when a drying process is completed and a cavity is then opened, it can be prevented from being placed on The particles around a sealing portion on the coupling surfaces of the upper and lower housings are introduced onto the substrate due to gravity caused by a height difference between the substrate and the coupling surface.

本說明書中所揭示之本發明之實施例之特定結構及功能描述僅用於描述本發明之實施例,且本發明之實施例可以各種形式體現且不應被解釋為限於本說明書中所描述之實施例。The specific structure and function descriptions of the embodiments of the present invention disclosed in this specification are only used to describe the embodiments of the present invention, and the embodiments of the present invention can be embodied in various forms and should not be construed as being limited to those described in this specification Examples.

儘管本發明之實施例可以各種方式修改且採取各種替代形式,但其特定實施例展示於附圖中且詳細描述於本說明書中。不意欲使本發明受限於所揭示之特定形式。相反地,本發明將覆蓋落入隨附發明申請專利範圍之精神及範疇內之所有修改、等效物及替代物。Although the embodiments of the present invention can be modified in various ways and take various alternative forms, specific embodiments thereof are shown in the accompanying drawings and described in detail in this specification. It is not intended to limit the present invention to the specific forms disclosed. On the contrary, the present invention will cover all modifications, equivalents and alternatives falling within the spirit and scope of the appended invention patent application.

應瞭解,儘管本文中可使用術語「第一」、「第二」及其類似者來描述各種元件,但元件不受術語限制。術語僅用於使元件彼此區分。例如,在不背離本發明之範疇之情況下,一第一元件可稱為一第二元件,且類似地,一第二元件可稱為一第一元件。It should be understood that although the terms “first”, “second” and the like may be used herein to describe various elements, the elements are not limited by the terms. The terms are only used to distinguish the elements from each other. For example, without departing from the scope of the present invention, a first element can be referred to as a second element, and similarly, a second element can be referred to as a first element.

應瞭解,當一元件被指稱「經連接」或「經耦合」至另一元件時,元件可係直接連接或耦合至另一元件或可存在介入元件。相比而言,當一元件指稱「經直接連接」或「經直接耦合」至另一元件時,不存在介入元件。應以一相同方式解譯用於描述元件之間之關係的其他用語(即,「在......之間」對「直接在......之間」、「相鄰」對「直接相鄰」及其類似者)。It should be understood that when an element is referred to as being “connected” or “coupled” to another element, the element can be directly connected or coupled to the other element or intervening elements may be present. In contrast, when an element is referred to as being "directly connected" or "directly coupled" to another element, there is no intervening element. Other terms used to describe the relationship between elements should be interpreted in the same way (ie, "between" and "directly between", "adjacent" For "directly adjacent" and the like).

本文中所使用之術語僅用於描述特定實施例且不意欲限制本發明。如本文中所使用,單數形式「一」及「該」意欲亦包含複數形式,除非內文另有明確指示。應進一步瞭解,本文中所使用之術語「包括」及/或「包含」特指存在所述特徵、整數、步驟、操作、元件、部件,或其等組合,但不排除存在或添加一或多個其他特徵、整數、步驟、操作、元件、部件,或其等組合。The terms used herein are only used to describe specific embodiments and are not intended to limit the present invention. As used herein, the singular form "one" and "the" are intended to also include the plural form, unless the context clearly indicates otherwise. It should be further understood that the terms "including" and/or "including" used herein specifically refer to the presence of the described features, integers, steps, operations, elements, components, or combinations thereof, but do not exclude the presence or addition of one or more Other features, integers, steps, operations, elements, parts, or combinations thereof.

除非另有界定,否則本文中所使用之包含科技術語之所有術語具有相同於本發明所屬領域之一般技術者通常所理解之含義的含義。應進一步瞭解,諸如常用詞典中所界定之術語的術語應被解譯為具有與其在相關技術之背景中之含義一致的一含義,且不應以一理想化或過於正式的意義解譯,除非本文中明確如此界定。Unless otherwise defined, all terms including scientific and technological terms used herein have the same meaning as commonly understood by those skilled in the art to which the present invention belongs. It should be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of related technologies, and should not be interpreted in an idealized or overly formal meaning, unless This is clearly defined in this article.

在下文中,將參考附圖詳細描述本發明之例示性實施例。Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

圖3係繪示根據本發明之一實施例之一基板乾燥腔的一視圖,圖4係繪示本發明之實施例中之與構成一攪拌器之一軸件耦合之一軸向耦合部件之一例示性上表面的一視圖,圖5係繪示本發明之一實施例中之一初始加壓用超臨界流體之一擴散路徑的一視圖,圖6係繪示本發明之實施例中之一乾燥用超臨界流體之一擴散路徑的一視圖,圖7係繪示本發明之實施例中之一混合流體之一排放路徑的一視圖,其中使一有機溶劑溶解於包含一初始加壓用超臨界流體及一乾燥用超臨界流體之一超臨界流體中,且圖8係本發明之一實施例中之用於描述一原理之一視圖,其中當完成一乾燥程序且接著打開一下外殼及一上外殼時,防止存在於設置於上外殼及下外殼之一耦合表面上之一密封部分上及該密封部分周圍之微粒引入至一基板上。FIG. 3 is a view showing a substrate drying chamber according to an embodiment of the present invention, and FIG. 4 is a view showing an axial coupling member coupled with a shaft member constituting a stirrer in an embodiment of the present invention A view of an exemplary upper surface. FIG. 5 shows a view of a diffusion path of a supercritical fluid for initial pressurization in one embodiment of the present invention, and FIG. 6 shows one of the embodiments of the present invention. A view of a diffusion path of a supercritical fluid for drying. FIG. 7 is a view of a discharge path of a mixed fluid in an embodiment of the present invention, in which an organic solvent is dissolved in a supercritical fluid for initial pressurization. A supercritical fluid and a supercritical fluid for drying are one of the supercritical fluids, and FIG. 8 is a view for describing a principle in an embodiment of the present invention, in which when a drying process is completed and then the housing and a When the upper shell is used, particles existing on and around a sealing part arranged on a coupling surface of the upper shell and the lower shell are prevented from being introduced onto a substrate.

參考圖3至圖8,根據本發明之實施例之一基板乾燥腔1包含一上外殼10、一下外殼20、一密封部分30、一基板放置板40、一加熱部件45、一整合式供應及排放口50、一上供應口60、一基板放置板支撐件70、一基板支撐件80、一外殼驅動器90、一攪拌器100及一軸向耦合部件200。3 to 8, a substrate drying chamber 1 according to an embodiment of the present invention includes an upper housing 10, a lower housing 20, a sealing portion 30, a substrate placement plate 40, a heating component 45, an integrated supply and The discharge port 50, an upper supply port 60, a substrate placement plate support 70, a substrate support 80, a housing driver 90, a stirrer 100, and an axial coupling member 200.

上外殼10及下外殼20彼此耦合以打開或閉合且提供其中執行一乾燥程序之一空間。例如,上外殼10及下外殼20可具有一圓柱形狀,但本發明不限於此。如下文將描述,上供應口60經形成於上外殼10中,且整合式供應及排放口50經形成於下外殼20中。下文將結合攪拌器100及軸向耦合部件200之構形詳細描述上供應口60之一特定構形。The upper casing 10 and the lower casing 20 are coupled to each other to open or close and provide a space in which to perform a drying process. For example, the upper housing 10 and the lower housing 20 may have a cylindrical shape, but the invention is not limited thereto. As will be described below, the upper supply port 60 is formed in the upper housing 10 and the integrated supply and discharge port 50 is formed in the lower housing 20. Hereinafter, a specific configuration of the upper supply port 60 will be described in detail in conjunction with the configuration of the agitator 100 and the axial coupling member 200.

密封部分30經設置於下外殼20及上外殼10之一耦合表面C上且維持下外殼20及上外殼10之耦合表面C之氣密性以阻斷腔之一內部區域與外部。The sealing portion 30 is disposed on a coupling surface C of the lower casing 20 and the upper casing 10 and maintains the airtightness of the coupling surface C of the lower casing 20 and the upper casing 10 to block an inner region and the outside of the cavity.

例如,如用於描述原理之圖8中所繪示(其中當完成乾燥程序且接著打開下外殼20及上外殼10時,防止存在於設置於上外殼10及下外殼20之耦合表面C上之密封部分30上及密封部分30周圍之微粒引入至一基板W上),基板W經放置於基板放置板40上以定位於高於下外殼20及上外殼10之耦合表面C上之一位階處,且當完成乾燥程序且接著打開下外殼20及上外殼10時,可防止設置於耦合表面C上之密封部分30周圍之微粒歸因於基板W與耦合表面C之間的一高度差所致之重力而引入至基板W上。For example, as shown in FIG. 8 for describing the principle (wherein when the drying process is completed and the lower casing 20 and the upper casing 10 are opened, the coupling surface C provided on the upper casing 10 and the lower casing 20 is prevented from being present The particles on the sealing portion 30 and around the sealing portion 30 are introduced onto a substrate W), the substrate W is placed on the substrate placement plate 40 so as to be positioned at a level higher than the coupling surface C of the lower housing 20 and the upper housing 10 , And when the drying process is completed and then the lower casing 20 and the upper casing 10 are opened, the particles around the sealing portion 30 disposed on the coupling surface C can be prevented from being attributed to a height difference between the substrate W and the coupling surface C The gravity is introduced onto the substrate W.

基板放置板40係耦合至下外殼20之一底面22且其上放置基板W之一組件,基板W上形成一有機溶劑。下文將描述基板放置板40與其他組件之間的一相互作用。The substrate placement plate 40 is coupled to a bottom surface 22 of the lower housing 20 and a component of the substrate W is placed thereon, and an organic solvent is formed on the substrate W. Hereinafter, an interaction between the substrate placement plate 40 and other components will be described.

加熱部件45設置於基板放置板40中,在供應初始加壓用超臨界流體且排放混合流體時操作,且用於加熱初始加壓用超臨界流體及混合流體。The heating member 45 is provided in the substrate placement plate 40, operates when the supercritical fluid for initial pressurization is supplied and the mixed fluid is discharged, and is used to heat the supercritical fluid for initial pressurization and the mixed fluid.

例如,加熱部件45可以形成於基板放置板40中之一電阻加熱元件或一充油加熱器之形式實施,但加熱部件45之實施形式不限於此。For example, the heating element 45 can be implemented in the form of a resistance heating element or an oil-filled heater formed in the substrate placement plate 40, but the implementation form of the heating element 45 is not limited to this.

例如,1)可在一預設初始加壓時間內透過構成整合式供應及排放口50之第一管線510及共同口部分520供應初始加壓用超臨界流體;2)在初始加壓時間逝去之後,可阻止初始加壓用超臨界流體之供應且可在一乾燥時間內透過上供應口60供應乾燥用超臨界流體;及3)在乾燥時間逝去之後,可阻止乾燥用超臨界流體之供應且可在一排放時間期間透過構成整合式供應及排放口50之共同口部分520及第二管線530排放一混合流體。在此情況中,例如,乾燥用超臨界流體之供應及混合流體之排放可重複預設次數,即,乾燥用超臨界流體及混合流體可沖洗預設次數。For example, 1) the supercritical fluid for initial pressurization can be supplied through the first pipeline 510 and the common port portion 520 constituting the integrated supply and discharge port 50 within a preset initial pressurization time; 2) the initial pressurization time elapses After that, the supply of the supercritical fluid for initial pressurization can be prevented and the supercritical fluid for drying can be supplied through the upper supply port 60 during a drying time; and 3) after the drying time has elapsed, the supply of the supercritical fluid for drying can be prevented And a mixed fluid can be discharged through the common port portion 520 and the second pipeline 530 constituting the integrated supply and discharge port 50 during a discharge time. In this case, for example, the supply of the supercritical fluid for drying and the discharge of the mixed fluid can be repeated a preset number of times, that is, the supercritical fluid for drying and the mixed fluid can be flushed a preset number of times.

例如,加熱部件45可在供應初始加壓用超臨界流體之一初始加壓時間內操作且可將初始加壓用超臨界流體之一溫度調整為一臨界點或更大。For example, the heating member 45 may be operated within an initial pressurization time of the supercritical fluid for the initial pressurization and the temperature of one of the supercritical fluids for the initial pressurization may be adjusted to a critical point or more.

上述構形之原因及其效應如下。The reasons and effects of the above configuration are as follows.

超臨界流體儲存於設置於根據本發明之實施例之基板乾燥腔1外部之一超臨界流體產生器中,一冷卻現象可由在透過一管及一閥將超臨界流體引入(初始加壓)至基板乾燥腔1中之一程序期間在閥及管之一連接部分處發生之一壓降引起,且超臨界流體可在上述引入程序期間液化或汽化以藉此引起基板W上之顆粒污染。因此,維持超臨界流體之溫度在臨界點或更大處係很重要的,但相關技術無法提供一有效技術措施。具體而言,當提高一加壓速度時,存在無法僅藉由使用一簡單熱交換器維持管之一溫度來將熱充分傳遞至超臨界流體之一問題。The supercritical fluid is stored in a supercritical fluid generator arranged outside the substrate drying chamber 1 according to the embodiment of the present invention. A cooling phenomenon can be achieved by introducing the supercritical fluid through a tube and a valve (initial pressurization) to During a process in the substrate drying chamber 1, a pressure drop occurs at a connecting part of the valve and the pipe, and the supercritical fluid can be liquefied or vaporized during the above-mentioned introduction process to thereby cause particle contamination on the substrate W. Therefore, it is important to maintain the temperature of the supercritical fluid at the critical point or greater, but the related technology cannot provide an effective technical measure. Specifically, when a pressurization speed is increased, there is a problem that it is impossible to sufficiently transfer heat to the supercritical fluid by only maintaining the temperature of one of the tubes using a simple heat exchanger.

在本發明之實施例中,使用設置於基板放置板40中之加熱部件45解決上述問題。即,當使用設置於腔中之基板放置板40中之加熱部件45執行初始加壓時,特定言之,當快速執行初始加壓時,可最小化用於基板乾燥腔1中之初始加壓用超臨界流體之一相變,使得可防止基板W上之顆粒污染,且可促進超臨界流體形成或維持,使得可提高一處理速度。In the embodiment of the present invention, the heating member 45 provided in the substrate placement plate 40 is used to solve the above-mentioned problem. That is, when the initial pressurization is performed using the heating member 45 provided in the substrate placement plate 40 in the cavity, in particular, when the initial pressurization is performed quickly, the initial pressurization used in the substrate drying chamber 1 can be minimized. Using a phase change of the supercritical fluid makes it possible to prevent particle contamination on the substrate W, and promote the formation or maintenance of the supercritical fluid, so that a processing speed can be increased.

另外,例如,加熱部件45可在排放混合流體之一排放時間內操作且可補償由歸因於在排放混合流體時發生之一壓降之絕熱膨脹引起之一溫降,使得包含於混合流體中之乾燥用超臨界流體之一溫度可調整為一臨界點或更大。In addition, for example, the heating member 45 may operate within a discharge time of the discharged mixed fluid and may compensate for a temperature drop caused by adiabatic expansion due to a pressure drop occurring when the mixed fluid is discharged, so as to be contained in the mixed fluid. The temperature of the supercritical fluid for drying can be adjusted to a critical point or greater.

上述構形之原因及其效應如下。The reasons and effects of the above configuration are as follows.

在腔中,當排放(減壓)其中使一有機溶劑(諸如IPA)溶解於乾燥用超臨界流體中之一混合流體時,混合流體之相分離可歸因於一冷卻效應而引起基板W上之顆粒污染或歸因於混合流體之一表面張力而引起形成於基板W上之一圖案塌陷。具體而言,當歸因於在大於或等於一臨界點之一高壓區域中之快速絕熱膨脹而使一溫度及一壓力降低至臨界點或更小時,可相分離呈一單相之混合流體以引起基板W上之乾燥缺陷(諸如顆粒污染)且亦引起基板W之圖案塌陷。In the cavity, when a mixed fluid in which an organic solvent (such as IPA) is dissolved in the supercritical fluid for drying is discharged (depressurized), the phase separation of the mixed fluid can be attributed to a cooling effect on the substrate W The particle contamination may be attributed to a surface tension of the mixed fluid, which causes a pattern formed on the substrate W to collapse. Specifically, when a temperature and a pressure drop to a critical point or less due to rapid adiabatic expansion in a high-pressure region greater than or equal to a critical point, the mixed fluid can be separated into a single phase to cause Drying defects (such as particle contamination) on the substrate W also cause the pattern of the substrate W to collapse.

在本發明之實施例中,使用設置於基板放置板40中之加熱部件45解決上述問題。即,鑑於排放混合流體時之相變來考量一減壓率,可鑑於冷卻效應來使用加熱部件45充分傳遞熱以執行減壓排放操作,且因此可防止乾燥缺陷且可提高一處理速度。In the embodiment of the present invention, the heating member 45 provided in the substrate placement plate 40 is used to solve the above-mentioned problem. That is, considering a decompression rate in view of the phase change when the mixed fluid is discharged, the heating member 45 can be used to sufficiently transfer heat in view of the cooling effect to perform the decompression discharge operation, and therefore, drying defects can be prevented and a processing speed can be increased.

例如,透過構成整合式供應及排放口50之一第一管線510及一共同口部分520供應之一初始加壓用超臨界流體可由基板放置板40阻擋且防止其直接噴灑於基板W上。For example, a supercritical fluid for initial pressurization supplied through a first pipeline 510 and a common port portion 520 constituting an integrated supply and discharge port 50 can be blocked by the substrate placement plate 40 and prevent it from being directly sprayed on the substrate W.

更具體而言,如繪示初始加壓用超臨界流體之擴散路徑之圖5及繪示混合流體之排放路徑(其中使有機溶劑溶解於包含初始加壓用超臨界流體及乾燥用超臨界流體之超臨界流體中)之圖7中所繪示,在完成乾燥程序之後打開腔時重新引入之微粒可由基板放置板40 (其係放置基板W所必需的,基板W係乾燥程序之一目標)阻擋,可防止初始加壓用超臨界流體在乾燥程序開始時直接朝向基板W之一表面流動以防止形成於基板W上之一圖案塌陷,可防止可含於初始加壓用超臨界流體中之微粒累積於基板W上或可減少微粒之一累積量,可歸因於一容積由基板放置板40佔據而減小腔之一工作容積,且可縮短一乾燥程序時間。More specifically, such as FIG. 5 showing the diffusion path of the supercritical fluid for initial pressurization and the discharge path of the mixed fluid (in which the organic solvent is dissolved in the supercritical fluid for initial pressurization and the supercritical fluid for drying In the supercritical fluid) shown in Figure 7, the particles re-introduced when the cavity is opened after the completion of the drying process can be re-introduced by the substrate placement plate 40 (it is necessary for the placement of the substrate W, which is one of the objectives of the drying process) The barrier can prevent the supercritical fluid for initial pressurization from flowing directly toward a surface of the substrate W at the beginning of the drying process to prevent a pattern formed on the substrate W from collapsing, and can prevent the supercritical fluid for initial pressurization from being contained in the supercritical fluid for initial pressurization. The accumulation of particles on the substrate W may reduce the accumulation of particles, which can be attributed to the fact that a volume occupied by the substrate placement plate 40 reduces the working volume of the cavity and shortens the drying process time.

整合式供應及排放口50係經形成以自下外殼20之一側表面24延伸至另一側表面26且在一側表面24與另一側表面26之間的一中間區域28中面向基板放置板40且提供初始加壓用超臨界流體之一供應路徑及混合流體之一排放路徑(其中使在乾燥之後形成於基板W上之有機溶劑溶解於初始加壓用超臨界流體及乾燥用超臨界流體中)之一組件。The integrated supply and discharge port 50 is formed to extend from one side surface 24 of the lower housing 20 to the other side surface 26 and to face the substrate in an intermediate area 28 between the one side surface 24 and the other side surface 26 The plate 40 provides a supply path of the supercritical fluid for initial pressurization and a discharge path of the mixed fluid (in which the organic solvent formed on the substrate W after drying is dissolved in the supercritical fluid for initial pressurization and the supercritical fluid for drying Fluid) one of the components.

單個整合式供應及排放口50可提供初始加壓用超臨界流體之供應路徑及混合流體之排放路徑(其中使在乾燥之後形成於基板W上之有機溶劑溶解於初始加壓用超臨界流體及乾燥用超流體中),使得超臨界流體可經引導以對稱流動且可經供應及排放以均勻分散於腔內部以導致基板之乾燥效率提高。A single integrated supply and discharge port 50 can provide a supply path for the supercritical fluid for initial pressurization and a discharge path for the mixed fluid (wherein the organic solvent formed on the substrate W after drying is dissolved in the supercritical fluid for initial pressurization and In the superfluid for drying), the supercritical fluid can be guided to flow symmetrically and can be supplied and discharged to be evenly dispersed in the cavity to increase the drying efficiency of the substrate.

例如,整合式供應及排放口50可包含:第一管線510,其經形成以自下外殼20之一側表面24延伸至中間區域28;共同口部分520,其經形成以在中間區域28中與第一管線510連通且面向基板放置板40;及第二管線530,其經形成以在中間區域28中與共同口部分520及第一管線510連通且延伸至下外殼20之另一側表面26。第一管線510及共同口部分520可提供初始加壓用超臨界流體之供應路徑,且共同口部分520及第二管線530可提供其中溶解有機溶劑之超臨界流體之排放路徑。For example, the integrated supply and discharge port 50 may include: a first pipeline 510 formed to extend from a side surface 24 of the lower housing 20 to the middle region 28; a common port portion 520 formed to be in the middle region 28 It communicates with the first pipeline 510 and faces the substrate placement plate 40; and the second pipeline 530 is formed to communicate with the common port portion 520 and the first pipeline 510 in the intermediate region 28 and extends to the other side surface of the lower housing 20 26. The first pipeline 510 and the common port portion 520 can provide a supply path for the supercritical fluid for initial pressurization, and the common port portion 520 and the second pipeline 530 can provide a discharge path for the supercritical fluid in which the organic solvent is dissolved.

上供應口60係經形成以在上外殼10之一中心區域中面向基板放置板40以提供乾燥用超臨界流體之供應路徑之一組件。The upper supply port 60 is a component formed to face the substrate placement plate 40 in a central area of the upper casing 10 to provide a supply path for the supercritical fluid for drying.

例如,1)可在一預設初始加壓時間內透過構成整合式供應及排放口50之第一管線510及共同口部分520供應初始加壓用超臨界流體;2)在初始加壓時間逝去之後,可阻止初始加壓用超臨界流體之供應且可在一乾燥時間內透過上供應口60供應乾燥用超臨界流體;及3)在乾燥時間逝去之後,可阻止乾燥用超臨界流體之供應且可在一排放時間期間透過構成整合式供應及排放口50之共同口部分520及第二管線530排放一混合流體。在此情況中,例如,乾燥用超臨界流體之供應及混合流體之排放可重複預設次數,即,乾燥用超臨界流體及混合流體可沖洗預設次數。For example, 1) the supercritical fluid for initial pressurization can be supplied through the first pipeline 510 and the common port portion 520 constituting the integrated supply and discharge port 50 within a preset initial pressurization time; 2) the initial pressurization time elapses After that, the supply of the supercritical fluid for initial pressurization can be prevented and the supercritical fluid for drying can be supplied through the upper supply port 60 during a drying time; and 3) after the drying time has elapsed, the supply of the supercritical fluid for drying can be prevented And a mixed fluid can be discharged through the common port portion 520 and the second pipeline 530 constituting the integrated supply and discharge port 50 during a discharge time. In this case, for example, the supply of the supercritical fluid for drying and the discharge of the mixed fluid can be repeated a preset number of times, that is, the supercritical fluid for drying and the mixed fluid can be flushed a preset number of times.

攪拌器100係在腔中攪拌透過整合式供應及排放口供應之初始加壓用超臨界流體及透過上供應口供應之乾燥用超臨界流體之一組件。攪拌器100可經構形以提高有機溶劑及初始加壓用超臨界流體之一混合速度及有機溶劑及乾燥用超臨界流體之一混合速度。可利用此一構形來增加基板產量(其係一超臨界乾燥程序之一效能指標),且可藉由引導超臨界流體維持其之一溫度在一臨界點或更大處來保證乾燥程序之均勻性。The agitator 100 is a component that stirs the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port and the supercritical fluid for drying supplied through the upper supply port in the cavity. The agitator 100 can be configured to increase the mixing speed of the organic solvent and the supercritical fluid for initial pressurization and the mixing speed of the organic solvent and the supercritical fluid for drying. This configuration can be used to increase substrate yield (which is a performance indicator of a supercritical drying process), and the drying process can be ensured by guiding the supercritical fluid to maintain a temperature at a critical point or greater Uniformity.

例如,如圖3及圖4中所繪示,攪拌器100可包含一軸件110、一攪拌葉片120及一驅動單元130。For example, as shown in FIGS. 3 and 4, the agitator 100 may include a shaft 110, a mixing blade 120 and a driving unit 130.

軸件110係透過形成於上外殼之中心區域中之一插入孔來插入至腔中之一組件。軸件110可用於藉由驅動單元130提供之一旋轉驅動力來旋轉。The shaft 110 is inserted into a component in the cavity through an insertion hole formed in the central area of the upper housing. The shaft 110 can be used to rotate by a rotation driving force provided by the driving unit 130.

攪拌葉片120係耦合至軸件110之兩端中定位於腔內部之一端的一組件。攪拌葉片120可用於藉由根據軸件110之旋轉在腔中旋轉來攪拌超臨界流體。The stirring blade 120 is coupled to a component located at one end of the cavity among the two ends of the shaft 110. The stirring blade 120 may be used to stir the supercritical fluid by rotating in the cavity according to the rotation of the shaft 110.

驅動單元130係耦合至軸件110之兩端中定位於腔之一外側處之另一端且對軸件110提供一旋轉驅動力之一組件。The driving unit 130 is a component that is coupled to the other end of the two ends of the shaft 110 positioned at an outer side of the cavity and provides a rotational driving force to the shaft 110.

軸向耦合部件200係耦合至上外殼之一外表面以軸向耦合構成攪拌器100之軸件110的一組件。The axial coupling component 200 is coupled to an outer surface of the upper shell to axially couple a component constituting the shaft 110 of the agitator 100.

例如,如圖4中所繪示,複數個通孔210、220、230及240可在軸向耦合部件200中彼此對稱形成以與軸向耦合部件200之一中心點間隔開,且上供應口可具有形成於上外殼中之複數個供應孔61、62以在一垂直方向上與形成於軸向耦合部件200中之複數個通孔對準。當然,一孔(其形成於在上外殼中形成之插入孔中以在垂直方向上對準)可形成於軸向耦合部件200之一中心區域中,且軸件110可透過形成於構成攪拌器100之軸向耦合部件200之中心區域中之孔及形成於上外殼中之插入孔來插入至腔中,且一軸承單元可設置於軸件110穿過之軸向耦合部件200中。For example, as shown in FIG. 4, a plurality of through holes 210, 220, 230, and 240 may be formed symmetrically to each other in the axial coupling part 200 to be spaced apart from a center point of the axial coupling part 200, and the upper supply port There may be a plurality of supply holes 61, 62 formed in the upper housing to align with a plurality of through holes formed in the axial coupling part 200 in a vertical direction. Of course, a hole (which is formed in the insertion hole formed in the upper housing to be aligned in the vertical direction) may be formed in a central area of the axial coupling member 200, and the shaft member 110 may be formed through the formation of the agitator The hole in the central area of the axial coupling part 200 of 100 and the insertion hole formed in the upper housing are inserted into the cavity, and a bearing unit can be arranged in the axial coupling part 200 through which the shaft 110 passes.

基板放置板支撐件70係使一端耦合至下外殼20之底面22及使另一端耦合至基板放置板40且在支撐基板放置板40時分離基板放置板40與下外殼20之底面22之一組件。The substrate placement board support 70 is a component that has one end coupled to the bottom surface 22 of the lower housing 20 and the other end is coupled to the substrate placement board 40 and separates the substrate placement board 40 and the bottom surface 22 of the lower housing 20 when supporting the substrate placement board 40 .

例如,歸因於基板放置板支撐件70而存在於下外殼20之底面22與基板放置板40之間的一第一分離空間R1可用於引導透過整合式供應及排放口50供應之初始加壓用超臨界流體沿基板放置板40之一下表面移動且逐漸擴散至其中放置基板W之一處理區域中。For example, a first separation space R1 existing between the bottom surface 22 of the lower housing 20 and the substrate placement plate 40 due to the substrate placement plate support 70 can be used to guide the initial pressurization supplied through the integrated supply and discharge port 50 The supercritical fluid is moved along a lower surface of the substrate placement plate 40 and gradually diffuses into a processing area in which the substrate W is placed.

基板支撐件80係使一端耦合至基板放置板40之上表面及使另一端耦合至基板W且在支撐基板W時分離基板W與基板放置板40之上表面之一組件。The substrate support 80 is a component that has one end coupled to the upper surface of the substrate placement plate 40 and the other end is coupled to the substrate W, and separates the substrate W and the upper surface of the substrate placement plate 40 when supporting the substrate W.

例如,歸因於基板支撐件80而存在於基板放置板40之上表面與基板W之間的第二分離空間R2可用於使基板W之下表面暴露於透過整合式供應及排放口50供應之初始加壓用超臨界流體及透過上供應口60供應之乾燥用超臨界流體以可縮短一乾燥程序時間。For example, the second separation space R2 existing between the upper surface of the substrate placement plate 40 and the substrate W due to the substrate support 80 can be used to expose the lower surface of the substrate W to the supply through the integrated supply and discharge port 50 The supercritical fluid for initial pressurization and the supercritical fluid for drying supplied through the upper supply port 60 can shorten a drying process time.

外殼驅動器90可為用於打開或閉合一外殼之一單元且可用於藉由在完成乾燥程序之後驅動下外殼20以分離下外殼20與上外殼10來打開腔或可用於藉由在乾燥程序開始時驅動下外殼20以將下外殼20耦合至上外殼10來閉合腔。在圖式中,外殼驅動器90經表示為驅動下外殼20,但此僅為一實例,且外殼驅動器90可經構形以驅動上外殼10。The housing driver 90 can be a unit for opening or closing a housing and can be used to open the cavity by driving the lower housing 20 to separate the lower housing 20 and the upper housing 10 after the drying process is completed, or can be used to open the cavity by starting the drying process The lower housing 20 is driven at time to couple the lower housing 20 to the upper housing 10 to close the cavity. In the drawing, the housing driver 90 is shown as driving the lower housing 20, but this is only an example, and the housing driver 90 can be configured to drive the upper housing 10.

例如,初始加壓用超臨界流體及乾燥用超臨界流體可包含二氧化碳(CO2 )且有機溶劑可包含醇,但本發明不限於此。醇可包含甲醇、乙醇、1-丙醇、2-丙醇(IPA)及1-丁醇作為一特定實例,但本發明不限於此。For example, the supercritical fluid for initial pressurization and the supercritical fluid for drying may include carbon dioxide (CO 2 ) and the organic solvent may include alcohol, but the present invention is not limited thereto. The alcohol may include methanol, ethanol, 1-propanol, 2-propanol (IPA) and 1-butanol as a specific example, but the present invention is not limited thereto.

例如,根據依據本發明之實施例在基板乾燥腔中執行之超臨界乾燥技術,藉由將超臨界二氧化碳供應至腔中之基板W (其表面由諸如醇之一有機溶劑潤濕)來使基板W上之醇溶解於一超臨界二氧化碳流體中。接著,可藉由自腔逐漸排放其中溶解醇之超臨界二氧化碳流體來乾燥基板W且無圖案塌陷。For example, according to the supercritical drying technology performed in the substrate drying chamber according to the embodiment of the present invention, the substrate W (the surface of which is wetted by an organic solvent such as alcohol) is supplied with supercritical carbon dioxide to the substrate W in the chamber. The alcohol above W is dissolved in a supercritical carbon dioxide fluid. Then, the substrate W can be dried without pattern collapse by gradually discharging the supercritical carbon dioxide fluid in which alcohol is dissolved from the cavity.

如上文所詳細描述,根據本發明,可解決以下問題:在其中透過一管及一閥將一超臨界流體自設置於一乾燥腔外部之一超臨界流體產生器引入(初始加壓)至乾燥腔中之一程序期間,超臨界流體由在閥及管之一連接部分處發生之壓降引起之一冷卻現象液化或汽化以藉此導致一基板上之顆粒污染。As described in detail above, according to the present invention, the following problem can be solved: in which a supercritical fluid is introduced (initial pressurization) from a supercritical fluid generator arranged outside a drying chamber through a tube and a valve to the drying During a process in the cavity, the supercritical fluid is liquefied or vaporized by a cooling phenomenon caused by a pressure drop that occurs at a connecting portion of the valve and the tube, thereby causing particle contamination on a substrate.

此外,可解決以下問題:在一乾燥腔中,當排放(減壓)其中使異丙醇(IPA)溶解於一乾燥用超臨界流體中之一混合流體時,混合流體之相分離歸因於一冷卻效應而引起一基板上之顆粒污染或歸因於混合流體之一表面張力而引起形成於基板上之一圖案塌陷。In addition, the following problem can be solved: in a drying chamber, when a mixed fluid in which isopropyl alcohol (IPA) is dissolved in a supercritical fluid for drying is discharged (decompressed), the phase separation of the mixed fluid is due to A cooling effect causes particle contamination on a substrate or a pattern formed on the substrate collapses due to a surface tension of the mixed fluid.

此外,可藉由提高超臨界流體及有機溶劑之混合速度來增加基板產量,且可藉由引導超臨界流體維持其之一溫度在一臨界點或更大處來保證一乾燥程序之均勻性。In addition, the substrate yield can be increased by increasing the mixing speed of the supercritical fluid and the organic solvent, and the uniformity of a drying process can be ensured by guiding the supercritical fluid to maintain one of its temperatures at a critical point or greater.

此外,單個整合式供應及排放口可提供初始加壓用超臨界流體之一供應路徑及其中溶解在乾燥之後形成於基板上之有機溶劑之超臨界流體之一排放路徑,使得超臨界流體可經引導以對稱流動且可經供應及排放以均勻分散於腔內部以導致基板之乾燥效率提高。In addition, a single integrated supply and discharge port can provide a supply path of the supercritical fluid for initial pressurization and a discharge path of the supercritical fluid of the organic solvent dissolved on the substrate after drying, so that the supercritical fluid can pass through It is guided to flow symmetrically and can be evenly dispersed in the cavity through supply and discharge to increase the drying efficiency of the substrate.

此外,在完成乾燥程序之後打開腔時重新引入之微粒可由基板放置板(其係放置基板所必需的)阻擋,可防止初始加壓用超臨界流體在乾燥程序開始時直接朝向基板之表面流動以防止形成於基板上之一圖案塌陷,可防止可含於初始加壓用超臨界流體中之微粒累積於基板上或可減少微粒之一累積量,可歸因於一容積由基板放置板佔據而減小腔之一工作容積,且可縮短一乾燥程序時間。In addition, the particles reintroduced when opening the cavity after the completion of the drying process can be blocked by the substrate placement plate (which is necessary for placing the substrate), which prevents the supercritical fluid for initial pressurization from flowing directly toward the surface of the substrate at the beginning of the drying process. Prevents a pattern formed on the substrate from collapsing, prevents particles contained in the supercritical fluid for initial pressurization from accumulating on the substrate or reduces the accumulation of particles, which can be attributed to a volume occupied by the substrate placement plate The working volume of one of the chambers is reduced, and the time of a drying program can be shortened.

此外,可將基板放置於基板放置板上以定位於高於上外殼及下外殼之耦合表面之一位階處,使得當完成乾燥程序且接著打開腔時,可防止設置於上外殼及下外殼之耦合表面上之密封部分周圍之微粒歸因於基板與耦合表面之間的一高度差所致之重力而引入至基板上。In addition, the substrate can be placed on the substrate placement board to be positioned at a level higher than the coupling surface of the upper shell and the lower shell, so that when the drying process is completed and the cavity is then opened, it can be prevented from being placed on the upper shell and the lower shell. The particles around the sealing portion on the coupling surface are introduced onto the substrate due to gravity caused by a height difference between the substrate and the coupling surface.

1:基板乾燥腔 10:上外殼 20:下外殼 22:底面 24:一側表面 26:另一側表面 28:中間區域 30:密封部分 40:基板放置板 45:加熱部件 50:整合式供應及排放口 60:上供應口 61, 62:供應孔 70:基板放置板支撐件 80:基板支撐件 90:外殼驅動器 100:攪拌器 110:軸件 120:攪拌葉片 130:驅動單元 200:軸向耦合部件 210, 220, 230, 240:通孔 410:高壓腔 420:下本體 422:下供應口 426:排出口 430:上本體 510:第一管線 520:共同口部分 530:第二管線 C:耦合表面 R1:第一分離空間 R2:第二分離空間 W:基板1: Substrate drying chamber 10: Upper shell 20: Lower shell 22: Bottom 24: One side surface 26: The other side surface 28: Middle area 30: Sealing part 40: substrate placement board 45: heating parts 50: Integrated supply and discharge port 60: Upper supply port 61, 62: supply hole 70: substrate placement board support 80: substrate support 90: Shell drive 100: agitator 110: Shaft 120: mixing blade 130: drive unit 200: Axial coupling part 210, 220, 230, 240: through hole 410: high pressure chamber 420: lower body 422: Down Supply Port 426: Exhaust Outlet 430: upper body 510: The first pipeline 520: Common Port 530: second pipeline C: Coupling surface R1: The first separation space R2: Second separation space W: substrate

圖1係繪示根據一相關技術之在乾燥一基板之一程序中發生之一圖案塌陷現象的一視圖。FIG. 1 is a view showing a pattern collapse phenomenon that occurs during a process of drying a substrate according to a related art.

圖2係繪示一習知基板乾燥腔的一視圖。FIG. 2 shows a view of a conventional substrate drying chamber.

圖3係繪示根據本發明之一實施例之一基板乾燥腔的一視圖。FIG. 3 is a view of a substrate drying chamber according to an embodiment of the present invention.

圖4係繪示本發明之一實施例中之與構成一攪拌器之一軸件耦合之一軸向耦合部件之一例示性上表面的一視圖。4 is a view showing an exemplary upper surface of an axial coupling member coupled with a shaft member constituting a stirrer in an embodiment of the present invention.

圖5係繪示本發明之一實施例中之一初始加壓用超臨界流體之一擴散路徑的一視圖。Fig. 5 is a view showing a diffusion path of a supercritical fluid for initial pressurization in an embodiment of the present invention.

圖6係繪示本發明之一實施例中之一乾燥用超臨界流體之一擴散路徑的一視圖。Fig. 6 is a view showing a diffusion path of a supercritical fluid for drying in an embodiment of the present invention.

圖7係繪示本發明之一實施例中之一混合流體之一排放路徑的一視圖,其中使一有機溶劑溶解於包含一初始加壓用超臨界流體及一乾燥用超臨界流體之一超臨界流體中。7 is a view showing a discharge path of a mixed fluid in an embodiment of the present invention, in which an organic solvent is dissolved in a supercritical fluid including a supercritical fluid for initial pressurization and a supercritical fluid for drying. Critical fluid.

圖8係本發明之一實施例中之用於描述一原理之一視圖,其中當完成一乾燥程序且接著打開一下外殼及一上外殼時,防止存在於設置於上外殼及下外殼之一耦合表面上之一密封部分上及該密封部分周圍之微粒引入至一基板上。FIG. 8 is a view for describing a principle in an embodiment of the present invention, in which when a drying process is completed and then the lower casing and an upper casing are opened, the coupling between one of the upper casing and the lower casing is prevented Particles on and around a sealing part on the surface are introduced onto a substrate.

1:基板乾燥腔 1: Substrate drying chamber

10:上外殼 10: Upper shell

20:下外殼 20: Lower shell

22:底面 22: Bottom

24:一側表面 24: One side surface

26:另一側表面 26: The other side surface

28:中間區域 28: Middle area

30:密封部分 30: Sealing part

40:基板放置板 40: substrate placement board

45:加熱部件 45: heating parts

50:整合式供應及排放口 50: Integrated supply and discharge port

60:上供應口 60: Upper supply port

61,62:供應孔 61, 62: supply hole

70:基板放置板支撐件 70: substrate placement board support

80:基板支撐件 80: substrate support

90:外殼驅動器 90: Shell drive

100:攪拌器 100: agitator

110:軸件 110: Shaft

120:攪拌葉片 120: mixing blade

130:驅動單元 130: drive unit

200:軸向耦合部件 200: Axial coupling part

510:第一管線 510: The first pipeline

520:共同口部分 520: Common Port

530:第二管線 530: second pipeline

C:耦合表面 C: Coupling surface

R1:第一分離空間 R1: The first separation space

R2:第二分離空間 R2: Second separation space

W:基板 W: substrate

Claims (14)

一種基板乾燥腔,其包括:一上外殼;一下外殼,其經耦合至該上外殼以打開或閉合;一基板放置板,其經耦合至該下外殼之一底面且其上放置一基板,該基板上經形成一有機溶劑;一上供應口,其經形成於該上外殼上以面向該基板放置板且提供一乾燥用超臨界流體之一供應路徑;一整合式供應及排放口,其經形成以自該下外殼之一側表面延伸至另一側表面,且經形成以在該一側表面與該另一側表面之間之一中間區域中指向該基板放置板,且經構形以提供一初始加壓用超臨界流體之一供應路徑及一混合流體之一排放路徑,其中在藉由供應該乾燥用超臨界流體來乾燥之後,使該有機溶劑溶解於包含該初始加壓用超臨界流體及該乾燥用超臨界流體之一超臨界流體中;一攪拌器,其經構形以攪拌透過該整合式供應及排放口供應之該初始加壓用超臨界流體及透過該上供應口供應之該乾燥用超臨界流體;及一加熱部件,其係設置於該基板放置板中,在供應該初始加壓用超臨界流體且排放該混合流體時操作,且加熱該初始加壓用超臨界流體及該混合流體,其中該整合式供應及排放口包含:一第一管線,其經形成以自該下外殼之該一側表面延伸至該中間區域; 一共同口部分,其經形成以在該中間區域中與該第一管線連通且面向該基板放置板;及一第二管線,其經形成以在該中間區域中與該共同口部分及該第一管線連通且延伸至該下外殼之該另一側表面。 A substrate drying chamber includes: an upper shell; a lower shell, which is coupled to the upper shell to open or close; a substrate placement plate, which is coupled to a bottom surface of the lower shell and a substrate is placed thereon, the An organic solvent is formed on the substrate; an upper supply port is formed on the upper casing to face the substrate placement plate and provide a supply path for a supercritical fluid for drying; an integrated supply and discharge port through Is formed to extend from one side surface of the lower housing to the other side surface, and is formed to point to the substrate placement plate in an intermediate region between the one side surface and the other side surface, and is configured to A supply path of the supercritical fluid for initial pressurization and a discharge path of a mixed fluid are provided, wherein after drying by supplying the supercritical fluid for drying, the organic solvent is dissolved in the supercritical fluid containing the initial pressurization. One of the critical fluid and the supercritical fluid for drying; an agitator configured to agitate the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port and through the upper supply port The supply of the supercritical fluid for drying; and a heating component, which is set in the substrate placement plate, operates when the supercritical fluid for initial pressurization is supplied and the mixed fluid is discharged, and heats the supercritical fluid for initial pressurization The critical fluid and the mixed fluid, wherein the integrated supply and discharge port includes: a first pipeline formed to extend from the side surface of the lower housing to the middle area; A common port portion formed to communicate with the first pipeline in the intermediate area and face the substrate placement plate; and a second pipeline formed to communicate with the common port portion and the second pipeline in the intermediate area A pipeline communicates and extends to the other side surface of the lower shell. 如請求項1之基板乾燥腔,其中該加熱部件係在供應該初始加壓用超臨界流體之一初始加壓時間內操作,且將該初始加壓用超臨界流體之一溫度調整為一臨界點或更大。 The substrate drying chamber of claim 1, wherein the heating component is operated within an initial pressurization time of the supercritical fluid for the initial pressurization, and the temperature of one of the supercritical fluid for the initial pressurization is adjusted to a critical Points or greater. 如請求項1之基板乾燥腔,其中該加熱部件係在排放該混合流體之一排放時間內操作,且補償由歸因於在排放該混合流體時發生之一壓降之絕熱膨脹引起之一溫降,使得包含於該混合流體中之該乾燥用超臨界流體之一溫度調整為一臨界點或更大。 The substrate drying chamber of claim 1, wherein the heating element is operated within a discharge time of the mixed fluid, and compensates for a temperature caused by adiabatic expansion due to a pressure drop when the mixed fluid is discharged The temperature of one of the supercritical fluids for drying contained in the mixed fluid is adjusted to a critical point or greater. 如請求項1之基板乾燥腔,其中該攪拌器用於提高該有機溶劑及該初始加壓用超臨界流體之一混合速度及該有機溶劑及該乾燥用超臨界流體之一混合速度。 The substrate drying chamber of claim 1, wherein the agitator is used to increase a mixing speed of the organic solvent and the supercritical fluid for initial pressurization and a mixing speed of the organic solvent and the supercritical fluid for drying. 如請求項4之基板乾燥腔,其中該攪拌器包含:一軸件,其透過經形成於該上外殼之一中心區域中之一插入孔來插入至一腔中;一攪拌葉片,其經耦合至該軸件之兩端中經定位於該腔內部之一端;及 一驅動單元,其經耦合至該軸件之該兩端中經定位於該腔外部之另一端,且對該軸件提供一旋轉驅動力。 The substrate drying chamber of claim 4, wherein the agitator includes: a shaft member inserted into a cavity through an insertion hole formed in a central area of the upper casing; and a stirring blade coupled to The two ends of the shaft are positioned at one end of the cavity; and A driving unit is coupled to the other end of the shaft member positioned outside the cavity among the two ends of the shaft member, and provides a rotational driving force to the shaft member. 如請求項5之基板乾燥腔,進一步包括一軸向耦合部件,該軸向耦合部件經耦合至該上外殼之一外表面以軸向耦合構成該攪拌器之該軸件,其中複數個通孔係形成於該軸向耦合部件中以與該軸向耦合部件之一中心點間隔開,且該上供應口具有經形成於該上外殼中之複數個供應孔,以與經形成於該軸向耦合部件中之該複數個通孔對準。 For example, the substrate drying chamber of claim 5, further comprising an axial coupling member coupled to an outer surface of the upper housing to axially couple the shaft member constituting the agitator, wherein a plurality of through holes Is formed in the axial coupling part so as to be spaced apart from a center point of the axial coupling part, and the upper supply port has a plurality of supply holes formed in the upper housing so as to be identical to those formed in the axial direction. The plurality of through holes in the coupling part are aligned. 如請求項6之基板乾燥腔,其中經形成於該軸向耦合部件中之該複數個通孔係彼此對稱配置。 Such as the substrate drying chamber of claim 6, wherein the plurality of through holes formed in the axial coupling member are symmetrically arranged with each other. 如請求項1之基板乾燥腔,其中:該第一管線及該共同口部分提供該初始加壓用超臨界流體之該供應路徑;且該共同口部分及該第二管線提供其中溶解該有機溶劑之該超臨界流體之該排放路徑。 The substrate drying chamber of claim 1, wherein: the first pipeline and the common port portion provide the supply path of the supercritical fluid for initial pressurization; and the common port portion and the second pipeline provide the organic solvent in which the organic solvent is dissolved The discharge path of the supercritical fluid. 如請求項8之基板乾燥腔,進一步包括經設置於該下外殼及該上外殼之一耦合表面上之一密封部分,其中該基板經放置於該基板放置板上以定位於高於該下外殼及該上外殼之該耦合表面之一位階處,且 當完成一乾燥程序且接著打開該下外殼及該上外殼時,防止經設置於該耦合表面上之該密封部分周圍的微粒歸因於該基板與該耦合表面之間之一高度差所致的重力而被引入至該基板上。 For example, the substrate drying chamber of claim 8, further comprising a sealing part disposed on a coupling surface of the lower casing and the upper casing, wherein the substrate is placed on the substrate placement plate to be positioned higher than the lower casing And a level of the coupling surface of the upper shell, and When a drying process is completed and then the lower casing and the upper casing are opened, the particles around the sealing portion disposed on the coupling surface are prevented from being attributed to a height difference between the substrate and the coupling surface Gravity is introduced onto the substrate. 如請求項9之基板乾燥腔,其中透過該第一管線及該共同口部分供應之該初始加壓用超臨界流體係由該基板放置板阻擋,以防止被直接噴灑於該基板上。 Such as the substrate drying chamber of claim 9, wherein the supercritical flow system for initial pressurization supplied through the first pipeline and the common port part is blocked by the substrate placement plate to prevent being directly sprayed on the substrate. 如請求項1之基板乾燥腔,進一步包括一基板放置板支撐件,該基板放置板支撐件使一端耦合至該下外殼之該底面及使另一端耦合至該基板放置板,且在支撐該基板放置板時分離該基板放置板與該下外殼之該底面。 For example, the substrate drying chamber of claim 1, further comprising a substrate placement board support, the substrate placement board support has one end coupled to the bottom surface of the lower housing and the other end is coupled to the substrate placement board, and supports the substrate When the board is placed, the substrate placement board and the bottom surface of the lower shell are separated. 如請求項11之基板乾燥腔,其中歸因於該基板放置板支撐件而存在於該下外殼之該底面與該基板放置板之間之一第一分離空間用於引導透過該整合式供應及排放口供應之該初始加壓用超臨界流體沿該基板放置板之一下表面移動且逐漸擴散至其中放置該基板之一處理區域中。 For example, the substrate drying chamber of claim 11, wherein a first separation space existing between the bottom surface of the lower housing and the substrate placing plate due to the substrate placing plate support is used for guiding through the integrated supply and The initial pressurizing supercritical fluid supplied from the discharge port moves along a lower surface of the substrate placement plate and gradually diffuses into a processing area in which the substrate is placed. 如請求項1之基板乾燥腔,進一步包括一基板支撐件,該基板支撐件使一端耦合至該基板放置板之一上表面及使另一端耦合至該基板,且在支撐該基板時分離該基板與該基板放置板之該上表面。 For example, the substrate drying chamber of claim 1, further comprising a substrate support member having one end coupled to an upper surface of the substrate placement plate and the other end coupled to the substrate, and separating the substrate when supporting the substrate Place the upper surface of the board with the substrate. 如請求項13之基板乾燥腔,其中歸因於該基板支撐件而存在於該基板放置板之該上表面與該基板之間之一第二分離空間用於使該基板之一下 表面暴露於透過該整合式供應及排放口供應之該初始加壓用超臨界流體及透過該上供應口供應之該乾燥用超臨界流體,以縮短一乾燥程序時間。 Such as the substrate drying chamber of claim 13, wherein a second separation space existing between the upper surface of the substrate placement plate and the substrate due to the substrate support is used for lowering one of the substrates The surface is exposed to the supercritical fluid for initial pressurization supplied through the integrated supply and discharge port and the supercritical fluid for drying supplied through the upper supply port, so as to shorten a drying process time.
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