TWI744813B - 用於半導體裝置之轉移的多軸移動 - Google Patents

用於半導體裝置之轉移的多軸移動 Download PDF

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TWI744813B
TWI744813B TW109107223A TW109107223A TWI744813B TW I744813 B TWI744813 B TW I744813B TW 109107223 A TW109107223 A TW 109107223A TW 109107223 A TW109107223 A TW 109107223A TW I744813 B TWI744813 B TW I744813B
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transfer
semiconductor device
impact
substrate
impact wires
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TW109107223A
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TW202038368A (zh
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可迪 皮特森
安德魯 賀斯卡
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美商羅茵尼公司
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Abstract

一種用於對半導體裝置晶粒執行從第一基材至第二基材上轉移部位的直接轉移之方法。該方法包括：判定設置於轉移頭上之衝擊絲、半導體裝置晶粒以及轉移部位之位置；判定是否在至少兩個位置處有衝擊絲、半導體裝置晶粒以及轉移部位已經對準至一臨限容差內；以及藉由衝擊絲轉移半導體裝置晶粒，使得半導體裝置晶粒從第一基材拆離並附接至第二基材上的轉移部位。轉移之完成至少部分基於對於衝擊絲、半導體裝置晶粒以及電路引線已經對準至臨限容差內之判定。

Description

用於半導體裝置之轉移的多軸移動
半導體裝置係使用諸如矽、鍺、砷化鎵及類似者等半導體材料製成的電氣部件。一般而言，半導體裝置被製造成為單一的分散裝置(discrete devices)或成為積體電路(IC)。單一的分散裝置之實例包括可電氣致動的元件，諸如發光二極體(LED)、二極體、電晶體、電阻器、電容器、熔斷器及類似者。
半導體裝置之製作一般涉及擁有大量步驟的複雜製造程序。製作之最終成品係「經封裝」半導體裝置。修飾語「經封裝」意指最終成品內建之外殼(enclosure)與保護特徵，以及致使封裝件內裝置可併入最後電路的界面。
半導體裝置之習知製作程序由處理半導體晶圓而開始。晶圓被切成許多方塊，分別係「未經封裝」的半導體裝置。修飾語「未經封裝」意指未以外殼圈圍且無保護特徵之半導體裝置。本文中，未經封裝的半導體裝置可被稱為半導體裝置晶粒(die)，或求簡潔而僅稱「晶粒」。單一的半導體晶圓可被切成方塊，以創建各種尺寸的晶粒，以在半導體晶圓上形成往上可達超過100,000或甚至1,000,000個晶粒(取決於半導體一開始的尺寸)，並且各個晶粒具有一定品質。接著經由於下簡短討論之習知製作程序對未經封裝晶粒進行封裝。從晶圓處理到封裝間之動作可被稱為「晶粒製備」。
在某些例子中，晶粒製備可能包括經由「取放程序(pick and place process)」來分類晶粒，該程序中被切成方塊的晶粒個別經拾取且被分類至不同筐(bin)。分類可基於晶粒之順向電壓容量、晶粒之平均功率且/或晶粒之波長。
一般而言，封裝涉及將晶粒裝配至塑膠或陶瓷封裝件中(例如模(mold)或外殼)。封裝也包括將晶粒接點連接至接腳/導線，以與最終電路系統界接/互連。半導體裝置之封裝一般而言由密封晶粒步驟完成，以保護晶粒不受環境(例如，灰塵)損害。
產品製造商接著將經封裝半導體裝置放置於產品電路系統中。由於封裝的緣故，裝置已經準備好要被「插接入」所製造產品之電路組件中。另外，雖然裝置之封裝能保護裝置不受可能造成裝置劣化或破壞之因素影響，經封裝裝置必然大於(例如，在某些案例中，約為厚度10倍且面積10倍，體積因此成為100倍)封裝件中晶粒。因此，所得電路組件無法較半導體裝置之封裝更輕薄。
如前所述，單一半導體晶圓可被切成方塊，從該半導體晶圓中創建出100,000或1,000,000個晶粒。故而這些使用來轉移半導體晶粒之機器需要極高精度。因此，轉移機構之建造通常具特定設計目標，其建造亦受嚴格約束，以確保精度與準確性。然而，此類轉移機構通常缺乏用於不同應用或製造目的之可變異性與可適應性。舉例而言，一個轉移機構用於轉移特定產品之晶粒，接著可能需要經過重新組態或調整以用於轉移另一產品之晶粒。重新組態可能耗費時間、低效，並且有時需要拆除並重建機器上之部件。
相關專利申請案之交互參照
本申請中併入2015年11月12日提出申請之14/939,896號標題為「用於半導體裝置之轉移的設備」的美國專利申請案，現已發證為美國9,633,883號專利，並且併入2018年5月12日提出申請之15/978,094號標題為「用於半導體裝置之多個直接轉移的方法與設備」的美國專利申請案，上述以參照方式將全文併入。縱述
本揭露大體上係針對將半導體裝置晶粒從一基材(本文中通常稱為第一基材)直接轉移到另一基材(本文中通常稱為第二基材)的轉移機構，諸如晶粒基材(例如，藍色膠膜(blue tape)、黏帶上半導體晶圓等等)、電路基材(例如，印刷電路板，撓性或剛性、金屬或塑膠的電路之表面)、另一晶粒(即，堆疊於晶粒上之晶粒，其中待堆疊之晶粒作為接收轉移晶粒之「基材」)等等，並且針對達成上述之大體程序。在一實施例中，轉移機構可運行以直接將未經封裝晶粒從諸如「晶圓黏帶(wafer tape)」之基材轉移至諸如電路基材的產品基材。與藉由習知手段生產之類似產品相比，未經封裝晶粒之直接轉移可顯著降低最終產品之厚度，並且同時降低產品基材的製造時間及/或成本。
為符合本說明書之目的，用語「基材(substrate)」意指任何程序或動作在其上或對其發生的物質。進一步言，用語「產品(product)」意指來自一程序或動作的所欲產出，不論完成狀態如何。因此，產品基材可意指在其上或對其發生之任何引起程序或動作以得所欲產出的物質。晶圓黏帶在本文中亦可被稱為半導體裝置晶粒基材，或僅稱為晶粒基材。
在一實施例中，轉移機構可直接將半導體裝置晶粒從晶圓黏帶轉移至產品基材，無需「封裝」晶粒。轉移機構可垂直設置於晶圓黏帶上方，且可致動衝擊絲以經由晶圓黏帶將晶粒朝向產品基材下壓。此對於晶粒的下壓程序可造成晶粒自晶圓黏帶剝離，從晶粒側邊開始，直到晶粒從晶圓黏帶分離並附接至產品基材。亦即，藉由降低晶粒與晶圓黏帶之間的黏著力，以及藉由增加晶粒與產品基材之間的黏著力，晶粒可被轉移。
轉移機構可固定(secure)產品基材以接收例如從晶圓黏帶轉移的「未經封裝」晶粒，諸如LED。作為降低使用晶粒產品之尺寸的努力，晶粒非常小且薄，舉例而言，晶粒高度可為約12至50微米，且側向尺寸可在約100微米到400微米之範圍內，或更大或更小。儘管如此，本文中所討論之轉移機器之實施例可適應於大小大於前述尺寸之晶粒的轉移。然而，本文中所討論之轉移機器之實施例可具體適用於微型LED(microLED)之轉移，大小範圍如前述。由於晶粒之相對小的大小，轉移機器包括用以精密對準承載晶粒的晶圓黏帶以及產品基材而運行的部件，以確保精確放置且/或避免產品材料浪費。在一實施例中，對準產品基材和晶圓黏帶上晶粒的部件可包括一組框架，其中晶圓黏帶和產品基材分別被牢固固定，並且個別輸送至對準位置，使得晶圓黏帶上特定晶粒被轉移至產品基材上之特定點位。
輸送產品基材之框架可在各種方向上行進，包括用於多個對準軸之面內水平、垂直及/或旋轉方向，或甚至是允許轉移至彎曲表面的面外方向。輸送晶圓黏帶之框架亦可在各種方向上行進。一個齒輪、軌道、馬達及/或其他元件的系統可被用來對分別承載產品基材與晶圓黏帶的框架進行牢固固定與輸送，以把產品基材與晶圓黏帶對準，以達將晶粒放置於產品基材上正確位置之目的。各框架系統亦可移動至一取出位置，以達在轉移程序完成後便於把晶圓黏帶與產品基材取出之目的。亦應理解到，第一基材、第二基材以及轉移機構之任意者或全部可對應於彼此為可移動的，以基於具體實施例便於最有效率之部件對準。
在一實施例中，轉移機構可包括多針轉移頭，類似點矩陣列印機之列印頭，因此其在本文後亦可稱為「點矩陣轉移頭(dot matrix transfer head)」。點矩陣轉移頭可包括可被同時個別或依序致動的複數個衝擊絲(本文中亦稱為「針(needle)」或「銷(pin)」)。該複數個衝擊絲可實行為將複數個半導體裝置晶粒從諸如晶圓黏帶的第一基材直接轉移置諸如產品基材的第二基材。點矩陣轉移頭可進一步包括外罩(housing)，該外罩可包括經組態以控制該複數個衝擊絲之致動的致動組件。點矩陣轉移頭亦可包括一展開元件(splaying element)。展開元件可經組態以分散該複數個衝擊絲使彼此間有一經指定距離。在一實施例中，展開元件可包括作為外罩之一整體部分。然而，在另一實施例中，展開元件與外罩的附接可係可移除的。點矩陣轉移頭亦可包括導向件(guide)(亦稱為導向頭)，其可附接至展開元件及/或外罩之一側。導向件可經組態以在轉移程序期間維持該複數個衝擊絲之側向位置。在一實施例中，導向件可在一轉移操作之前接觸晶圓黏帶之表面。然而，在其他實施例中，導向件可設置於鄰近晶圓黏帶之表面而無需任何接觸或僅在轉移操作前有一些間歇性直接接觸。
在一實施例中，複數個衝擊線可經組態為多節距點矩陣組態(本文中稱為「多節距(multi-pitch)」)。本文中所使用之用語「節距(pitch)」意指物體或點之間的間隔。然而，當用於參照複數個衝擊絲之排列時，用語「節距」意指衝擊絲之間隔，以及因而造成的複數個衝擊絲可能或可能不與一或多個其他部件對準的情況，例如，待轉移之晶粒、轉移之部位等等。舉例而言，在一實施例中，多節距組態可用彼此間恆定距離來排列複數個衝擊絲，使得複數個衝擊絲係等距間隔分開，而非間隔開以與特定電路引線圖案(pattern)或與晶圓黏帶上半導體裝置晶粒之排列對準。使用了用語「多節距」係因為當晶圓黏帶上的半導體裝置晶粒或產品基材上的電路引線係非等距間隔開(即，在晶粒或引線之間具有多個相異節距)時，複數個衝擊絲之多節距組態可係有用處的。亦即，讓複數個衝擊絲彼此間等距地間隔開，可增加複數個衝擊絲中至少一衝擊絲可能與半導體裝置晶粒或電路引線中至少一者對準的機會。多節距組態可藉由將一導向頭附接至多節距組態中的複數個衝擊絲排列上而達到。
額外地，且/或替代地，在一實施例中，可用一匹配節距組態來排列複數個衝擊絲。在此類實施例中，複數個衝擊絲可經排列以與下列之一對準：產品基材上電路引線之預定節距、無需貼附至電路引線之轉移的轉移部位、或根據如待轉移半導體裝置晶粒所在晶圓黏帶上之晶粒位置排列。具體對準可由電路引線或半導體裝置晶粒中何者以較恆定間距分隔開來判定。舉例而言，若與待轉移晶粒的來源基材上的晶粒位置相較，晶粒待轉移至的電路引線以較為等距方式間隔開，則當以匹配節距組態來排列時，可排列複數個衝擊絲與電路引線轉移部位之間隔對準。
圖1繪示設備100(或「直接轉移設備(direct transfer apparatus)」)，可用於將未經封裝半導體裝置晶粒從晶圓黏帶102直接轉移至產品基材104，或相同地，將其他電氣部件從承載基材(亦即，承載一或多個電氣部件之基材)轉移至產品基材。晶圓黏帶104在本文中亦可被稱為半導體裝置晶粒基材，或僅稱為晶粒基材，或有時稱為第一基材。設備100可包括產品基材輸送機構106以及晶圓黏帶輸送機構108。產品基材輸送機構106可包括產品基材框架110，且晶圓黏帶輸送機構可包括晶圓黏帶框架112。在一實施例中，產品基材框架110可如描繪直接對產品基材牢固固定，或間接牢固固定，舉例而言，於第二基材在基材支撐件之上靜止處(未示，但104處可表示基材支撐件，且第二基材可被牢固固定至其表面，無論第二基材上是否有電路引線，諸如於美國專利申請15/409,409號且現發證為美國專利10,062,588號中所述)。設備100可進一步包括轉移機構114，諸如點矩陣轉移頭(本文中參照為114)，其如所示可被垂直設置於晶圓黏帶102上方。在一實施例中，點矩陣轉移頭114可定位以接觸或幾乎接觸晶圓基材102。再者，一或多個微調整機構可設置於產品基材輸送機構、晶圓黏帶輸送機構或轉移機構之一或多者，以在轉移操作前對各別機構之轉移位置進行微調整(見美國專利申請16/147,456號)。
點矩陣轉移頭114可進一步包括導向頭116，藉由其使複數個衝擊絲(118(1)、118(2)、…118(n)，本文中共同稱為118)之單一衝擊絲118(1)插入至導向頭的多個孔洞120之單一孔洞內，以在轉移操作其間維持複數個衝擊絲118之各者的位置。舉例而言，導向頭116可將複數個衝擊絲118組態為m xn 矩陣組態。在此類示例中，複數個衝擊絲118可被插入至導向頭116之多個孔洞120內，從而引導複數個衝擊絲118以m xn 矩陣組態致動(例如，12 x 2矩陣組態，其中有十二列孔洞與兩行孔洞)。額外地，導向頭116可經組態以使替換輕易達成，可用另一具有相同組態的導向頭(舉例而言，在損害引起之替換的情況下)、或具有多個孔洞的不同組態的導向頭替換。舉例而言，第一導向頭可附接至具有12 x 2矩陣組態的點矩陣轉移頭114，以使用於第一電路設計。在切換到與第一電路設計相異之第二電路設計中進行轉移時，具有8 x 3矩陣或其他組態的第二導向頭可被附接至點矩陣轉移頭100，從而替換第一導向頭。在一實施例中，導向頭106包括一基座側以及與基座側相對之附接側，導向頭116經由附接側而以有可移除潛能方式附接至點矩陣轉移頭114。
複數個衝擊絲118可連接至(多個)致動器122。致動器122可包括連接至複數個衝擊絲118之馬達(未示)，以驅動複數個衝擊絲118於預定及/或計算出及程式訂定時間接近晶圓黏帶102。在此類實施例中，致動器122及/或設備100可通訊耦接至控制器(未示)，該控制器經組態以啟動/控制致動器122及/或本文中所描述其他特徵。在一實施例中，複數個衝擊絲118可用於將未經封裝的半導體裝置晶粒124從晶圓黏帶102直接轉移至產品基材104，使得半導體裝置晶粒124之至少一者與至少一電路引線126接觸並黏合。相似地，在轉移不涉及電路引線之實施例中(例如，晶粒堆疊、晶圓黏帶至晶圓黏帶轉移等等)，轉移程序在晶粒124接觸並附接至第二基材且從第一基材拆離時，可被視為成功。
既然點矩陣轉移頭114包括複數個衝擊絲118，點矩陣轉移頭114可經組態與控制以並行地轉移多個半導體裝置晶粒124。額外地，且/或替代地，點矩陣轉移頭114可將該複數個衝擊絲118實行為依序轉移多個半導體裝置晶粒124。雖然圖1中描繪三個衝擊絲118，在一實施例中，點矩陣轉移頭114可包括二或更多個衝擊絲118。舉例而言，複數個衝擊絲118可包括數量為2、3、6、12、24等等之衝擊絲，以及示例數量之間或大於示例數量之任何數量。
不考慮數量，複數個衝擊絲之個別衝擊絲可具獨立可致動性，使能複數個衝擊絲118之個別衝擊絲被獨自致動或以一或多個群組致動。亦即，舉例而言，點矩陣轉移頭114可一次致動單一衝擊絲118(1)、一次致動二或更多個衝擊絲(例如，118(1)與118(n))、且/或全部的複數個衝擊絲118。在此類實施例中，複數個衝擊絲118之一頭或一簇之實行容許轉移機構以較實行單一衝擊絲更為高效之方式轉移晶粒。舉例而言，當點矩陣轉移頭114在產品基材上方移動時，實行複數個衝擊絲118的轉移機構可一次轉移多於一個晶粒。經由包含複數個衝擊絲118之頭或一簇複數個針118來轉移多個晶粒可顯著地降低總轉移時間，並且也降低若非如此轉移機構必需移動的行進距離。
圖2繪示直接轉移設備100之一實施例的自上而下的示意表示圖，直接轉移設備具有以多節距組態排列的複數個衝擊絲202，並繪示半導體裝置晶粒204以及電路引線206。如圖2所示，在多節距組態中，一列中複數個衝擊絲202之各者可對於彼此等距定位。然而，在一替代性實施例中，複數個衝擊絲202可用非等距間隔相對定位。在多節距組態中，複數個衝擊絲202可彼此鄰近地間隔開。在此類實施例中，複數個衝擊絲202可緊鄰彼此地間隔開。舉例而言，複數個衝擊絲202的間隔可僅足夠避免彼此碰撞。多節距組態排列複數個衝擊絲202，使得各衝擊絲設置於點矩陣轉移頭之內，使得在一轉移操作期間衝擊絲之一週期(cycle)將個別衝擊絲定位於緊鄰於至少一其他衝擊絲處。如先前所提及，多節距組態具有能力可適應以複數個不同節距(或「間距」)設置之半導體裝置晶粒/或電路引線。既然沿著一列根本上連續地設置有一衝擊絲相鄰於另一衝擊絲，多節距組態可在一些時機實行，舉例而言，當半導體裝置晶粒或電路引線在各別框架中以較不一致間距方式固持且被使用在轉移程序中時。如先前所討論，多節距組態可藉由附接一導向頭達成，該導向頭具有強制複數個衝擊絲202進入圖2所示組態的多個孔洞。
額外地，且/或替代地，在一實施例中，複數個衝擊絲202可附接至轉移機構，使得該複數個衝擊絲202以多節距組態排列。注意個別衝擊絲之間隔亦可取決於所轉移晶粒之大小而變化。亦即，對於大小相對較大的晶粒(例如，具有約400微米或更大的基底尺寸)，衝擊絲之間的間隔可較大，以適應於晶粒之較大底面積。然而，在待轉移晶粒之大小較小(例如，具有小於約400微米的基底尺寸)的多節距組態實施例中，間隔可較小。舉例而言，複數個衝擊絲202可以下列距離分隔開，距離在0.1 mm與2 mm之間、在0.25 mm與1 mm之間、在0.35 mm與0.75 mm之間、在0.4 mm與0.6 mm之間等等。
在一實施例中，如部位A所示，晶粒204可於衝擊絲202、晶粒204以及電路引線206全部對準之部位處轉移。一旦對準，衝擊絲202可被致動朝向晶粒204，使得衝擊絲202按壓晶粒204，因而使得其接觸並且黏合至電路引線206。額外地，且/或替代地，在一實施例中，三個部件(衝擊絲、晶粒以及電路引線/轉移部位)無需完美對準才能進行轉移動作。舉例而言，在一實施例中，若部件對準至臨限容差內，則可轉移晶粒204。部位B與C描繪可能的部位，於該些部位處三個部件並未通過中央軸對準但可仍然有能力轉移半導體裝置晶粒204。此容差可基於所得產品的品質約束而預先訂定。
圖3繪示直接轉移設備100之一實施例的自上而下的示意表示圖，直接轉移設備具有以匹配節距組態排列的複數個衝擊絲302，並繪示半導體裝置晶粒304以及電路引線306。如圖3所示，在匹配節距組態中，複數個衝擊絲302之各者經排列以對準至一其他類型部件。在圖3所示之特定實施例中，複數個衝擊絲302在匹配節距組態中經排列以與電路引線306對準。額外地，且/或替代地，在一實施例中，複數個衝擊絲302可經排列以與半導體裝置晶粒304對準。在一實施例中，複數個衝擊絲302可與任何間隔較一致的部件對準。舉例而言，若電路引線306在電路引線306之各者之間具有可靠度較高的精確固定間隔，那麼複數個衝擊絲302在匹配節距組態中可被排列以與電路引線306對準。然而，若半導體裝置晶粒304具有較一致的間隔，複數個衝擊絲302在匹配節距組態中可被排列以與半導體裝置晶粒304對準。匹配節距組態容許部件中兩者在轉移操作間幾乎維持靜止，而以所需方式調整第三部件。舉例而言，若複數個衝擊絲302在匹配節距組態中與電路引線306對準，那麼半導體裝置晶粒302可係為使轉移能夠發生而必需調整的唯一部件。因此，比起需要移動轉移機構、晶圓黏帶以及產品基材才能對準該三個部件，僅有一個部件(例如，具有半導體裝置晶粒設置其上的晶圓黏帶)可能在轉移之間必需被調整來確保所有三個部件被充分對準。
如先前所討論，匹配節距組態可藉由附接一導向頭達成，該導向頭具有強制複數個衝擊絲302進入圖3所示組態的多個孔洞。額外地，且/或替代地，在一實施例中，可使用能夠在匹配節距與多節距組態間調整的導向頭而無需替換導向頭。再進一步，在一實施例中，複數個衝擊絲302可附接至轉移機構，使得該複數個衝擊絲302以匹配節距組態排列。如先前所提及，匹配節距組態在轉移操作期間將匹配節距組態之複數個衝擊絲302排列在複數個衝擊絲302之個別衝擊絲之位置。
在一實施例中，可至少部分基於產品基材上電路引線之節距及/或晶圓黏帶上半導體裝置晶粒之節距來選擇多節距或匹配節距組態。額外地，且/或替代地，在一實施例中，複數個衝擊絲可分群，使得複數個衝擊絲之第一部分以多節距組態排列，而複數個衝擊絲之第二部分以匹配節距組態排列。在一實施例中，直接轉移設備可自動切換導向頭，以用多或匹配節距組態來組態複數個衝擊絲。額外地，且/或替代地，人類操作員可更換點矩陣轉移頭上的導向頭，以用所欲組態排列針。
以上描述之程序繪示於圖4中。為了解釋之簡明，程序400描述為至少部分藉由直接轉移設備100進行。然而，在一實施例中，程序400可由另一設備及/或外部控制器、運算資源或人類操作員進行。值得注意的是，雖然步驟之一者及/或所有可由人類操作員進行，由於應用之本質加上產品部件之大小和所欲工作速度，步驟最好由電子裝置之處理能力執行。額外地，且/或替代地，在一實施例中，步驟之一者及/或所有可完全自動化並由直接轉移設備100進行。
在步驟402處，判定所注意部件之節距，諸如半導體裝置晶粒及/或電路引線。亦即，判定半導體裝置晶粒及/或轉移部位之個別者之間諸如沿著一電路引線或一基材之位置的間隔或距離(例如，0mm或以上)。
在步驟404處，對於如何組態複數個衝擊絲作出一判定，該判定之作出至少部分基於半導體裝置晶粒及/或轉移部位之所判定節距。在此一實施例中，可判定是否以匹配節距組態或多節距組態來組態複數個衝擊絲。此判定可至少部分基於何組態可更高效地將晶粒從第一基材(例如，半導體裝置晶粒之晶圓黏帶)轉移至第二基材(例如，產品基材)。
在步驟406處，複數個衝擊絲被組態為匹配節距組態或多節距組態其中一者。在一替代性實施例中，衝擊絲可完全被組態為不同的組態(例如，圓形類型圖案、混合圖案等等)。因此，複數個衝擊絲可經由附接將該複數個衝擊絲排列為特定組態之導向頭來被排列為該特定組態。
圖5根據本揭露一實施例繪示自上而下的示意表示圖，表示以多節距組態排列的複數個衝擊絲502、還有直接轉移設備100用來轉移半導體裝置晶粒504可做出的示例性移動。圖5繪示相對於單一衝擊絲轉移機構或具有固定衝擊絲的多衝擊絲轉移機構而言，使用多節距點矩陣轉移頭的可能的優點。舉例而言，圖5描繪將複數個衝擊絲502以多節距組態排列，如何有利於半導體裝置晶粒504和電路引線506係非等距間隔開的情境。使複數個衝擊絲502以彼此緊密跟隨的方式間隔開，可增加一衝擊絲與至少一其他部件對準之可能性，並且在某些例子中，可與其他兩種部件均對準，使得可發生一轉移操作。舉例而言，位置A與B表示可無需調整部件中任一者即發生轉移操作之部位。在一實施例中，轉移機構可同時轉移多個半導體裝置晶粒504。位置C可表示轉移頭及/或另一部件之調整可係必要之部位。在此示例中，轉移機構可能必需對點矩陣轉移頭和晶圓黏帶均作出輕微調整，以能夠在位置C處進行轉移操作。在一實施例中，轉移機構可在作出讓其他轉移發生的大型調整前，優先處理僅需要小型調整的轉移。舉例而言，在一實施例中，轉移機構可在作出移至下一列之較大調整(或「跳轉(jump)」)與用於完成位置D之轉移的部件調整前，先在部位A、B與C處轉移半導體裝置晶粒504。此程序在本文中於下文相對於圖7作進一步描述。
圖6根據本揭露一實施例繪示自上而下的示意表示圖，表示以匹配節距組態排列的複數個衝擊絲602、以及直接轉移設備100用來轉移半導體裝置晶粒604可做出的示例性移動。圖6描繪將複數個衝擊絲602以匹配節距組態排列，如何有利於半導體裝置晶粒604或電路引線606係實質上等距間隔開的情境。在由圖6描繪之特定示例中，電路引線606顯示為相對等距地間隔開，且複數個衝擊絲602經排列以與其對準。然而，在一實施例中，複數個衝擊絲602可經排列以與半導體裝置晶粒604對準。如圖6中所示，使複數個衝擊絲602與電路引線606對準可降低為了完成半導體裝置晶粒604之轉移所必需作出的調整量。舉例而言，圖6之位置A與C描繪無需任何調整就能夠立即完成的轉移。位置B描繪一部位，在該部位處半導體裝置晶粒604之一者的輕微調整對於完成半導體裝置晶粒604轉移而言可係唯一需要的調整。如先前所提及，轉移機構可在作出用於讓其他轉移發生的大型調整前，優先處理僅需要小型調整的轉移。在一實施例中，轉移機構可在一慢移動軸上作出小型調整，而在一快移動軸上作出大型調整，諸如在作出位置D處的轉移前「跳轉」至位置D。
圖7繪示根據本申請一實施例之一種對轉移半導體設備晶粒的直接轉移設備100所做出調整進行判定之方法700。為了解釋之簡明，程序700描述為至少部分藉由直接轉移設備100進行。然而，在一實施例中，程序700可由另一設備及/或外部控制器或運算資源進行。值得注意的是，雖然步驟之一者及/或所有可由人類操作員進行，由於應用之本質加上產品部件之大小和所欲工作速度，步驟最好由電子裝置之處理能力進行。額外地，且/或替代地，在一實施例中，步驟之一者及/或所有可完全自動化並由直接轉移設備100進行。
方法700(以及本文中所描述各程序)係繪示為邏輯流程圖，其各操作表示能夠由硬體、軟體或其組合所實行的一操作序列。在使用情境為軟體下，操作表示儲存於一或多個電腦可讀取媒體上的電腦可執行指令，當其被一或多個處理器時執行所敘述操作。大體而言，電腦可執行指令包括執行具體功能或實行具體抽象資料類型的常式(routine)、程式、物件、部件、資料結構、與類似者。
電腦可讀取媒體可包括非暫態電腦可讀取儲存媒體，其可包括硬碟、軟碟、光碟、CD-ROM、DVD、唯讀記憶體(ROM)、隨機存取記憶體(RAM)、EPROM、EEPROM、快閃記憶體、磁性或光學卡片、固態記憶體裝置、或其他適用於儲存電子指令的儲存媒體。另外，在某些實施例中，電腦可讀取媒體可包括暫態電腦可讀取信號(呈壓縮或未壓縮形式)。不管是否使用載波調變，電腦可讀取信號之實例包括但不限於代管或運轉電腦程式之電腦系統可經組態以存取之信號，包括透過網際網路或其他網路下載之信號。最後，除非另行註記，操作順序之描述不欲被解讀為限制，且任意數量的所描述操作能夠以任何順序且/或平行地結合，以實行程序。
於702處，設備可判定一或多個部件之位置。在一實施例中，設備可判定各個部件之部位。如先前所使用，用語部件(component)包括但可不限於，轉移頭(例如，點矩陣轉移頭)、晶圓黏帶以及設置於其上的個別半導體裝置晶粒、以及產品基材與其上個別電路引線或所欲轉移部位。因此，在步驟702處，設備可判定此些部件之各者的部位。更具體而言，在步驟702處，設備可聚焦於轉移頭正上方之部位，如圖2至圖5所繪示。設備可判定複數個衝擊絲之各者的部位，且可判定多個轉移部位與半導體裝置晶粒已相對定向(oriented)處。步驟702可於完成任何轉移之前先行達成，使得轉移設備定位出並映射轉移部位與半導體裝置晶粒之各者的部位。在此實施例中，設備知道轉移部位與半導體裝置晶粒之各者的部位，且僅需判定相對於其他部件已知位置的轉移頭部位。然而，在另一實施例中，設備可實時判定部件之部位。亦即，隨著轉移頭沿著基材上方移動，一或多個感測器可「預看(look ahead)」，並於轉移程序正在完成時判定部件之部位。
於步驟704處，設備可判定是否有任何無需調整即有轉移可能的位置。亦即，一旦轉移頭已經移動到一特定部位，其可判定是否在任何部位處有一衝擊絲、一半導體裝置晶粒與一轉移部位(諸如電路引線，於本文中做為示例性轉移部位)已充分對準，以完成半導體裝置晶粒之轉移。如先前所提及，衝擊絲、半導體裝置晶粒與轉移部位無需完美地相對中央軸對準。然而，在一實施例中，設備可判定該等是否已對準至一特定臨限容差內。此臨限容差可基於所得產品的品質約束而預先訂定。若設備判定該三個部件已充分對準至臨限值內，程序將繼續至步驟706。
於步驟706處，設備可對已與半導體裝置晶粒和轉移部位充分對準之衝擊絲中至少一者及/或全部進行致動。舉例而言，若設備判定第一、第三與第四衝擊絲已與其他部件充分對準，轉移頭可並行或依序致動第一、第三與第四衝擊絲。
一旦設備已轉移無需調整即可被轉移的所有可能的半導體裝置晶粒，設備可於步驟708處判定是否有從目前部位經由微型移動調整即能轉移的更多半導體裝置晶粒。若無更多能藉由相對微型調整而轉移之半導體裝置晶粒，轉移頭可移動至下一部位，或若沒有更多待進行轉移，程序將於步驟710處結束。然而，若有更多需被轉移之半導體裝置晶粒，程序可於步驟702處再次開始，如從步驟710處指向步驟702處的可選箭頭所示。替代性地，既然設備已判定部件之一部位，且已經轉移無需調整的可能半導體裝置晶粒，設備可跳過步驟702與704，且可跟隨回應於步驟704之「否」路徑，因為可能沒有無需部分調整即可行的更多可能轉移部位。在此實施例中，從步驟708可選的「是」路徑可接著至步驟712，如圖7所示。
回到步驟704，若設備判定沒有任何三個部件充分對準至臨限值內之轉移可能性，程序將繼續至步驟712。於步驟712處，設備可判定需要最少量調整以轉移半導體裝置之部位。因此，設備將判定能夠以所需(一或更多個部件之)最少移動量在最少量時間內可完成的下一轉移。然而，在一實施例中，於步驟712處，設備可判定一移動序列，該移動序列對於完成給定部位處(即，晶圓黏帶之節段)剩下轉移而言所需的調整進行最佳化。
於步驟714處，設備可調整一或多個部件，因而使得三個部件充分對準以完成一轉移。在上述之多節距組態中，設備調整部件之數量可達所有三者。設備在多節距組態中可並行調整所有三個部件，以限制為了對準該三個部件任一部件需要移動的距離，藉以降低轉移之間的時間。然而，設備可讓一或多個部件靜止，並相對該第一部件移動一或多個其他部件，類似於圖4所描述之示例。在上述之匹配節距組態中，設備可讓部件中兩者靜止，而僅調整一個其他部件，同時進行小型調整，類似於圖5所描述之示例。額外地，且/或替代性地，設備可致動一或多個衝擊絲，以調整位於晶圓黏帶上之一或多個半導體裝置晶粒之位置。
於步驟716處，一旦完成用以轉移至少一半導體裝置晶粒的(多個)調整，設備可判定在進行該(多個)調整後，是否有可被轉移的其他可能半導體裝置晶粒。
於步驟718處，設備可對已與半導體裝置晶粒和轉移部位充分對準之衝擊絲中至少一者及/或全部進行致動。
程序可返回至步驟708處，並判定在轉移頭附近的部位是否有更多待轉移的半導體裝置晶粒。
如先前所提及，在一實施例中，設備可在不同移動軸上優先處理大型及小型調整。舉例而言，在步驟714作出的小型調整(或所需要調整距離在一預定距離臨限值以下的調整)可於設備之慢移動軸上作出，而較大調整(或所需要調整距離在一預定距離臨限值以上的調整)(例如，切換列或將轉移頭移動至步驟710之下一部位)可在一快移動軸上作出。此可最佳化設備能力並降低轉移間時間。然而，在一實施例中，程序可用相反方式完成，小型移動在快移動軸上作出，而大型移動在慢移動軸上作出。當有大量待作出的小型移動，使得對於作出小型調整必要的總時間比作出一個大型調整的時間還要長時，此可係有利的。應注意到，在本申請之特定示例中，「小型(small)」與「大型(large)」移動可在微米等級上完成，而「快」與「慢」移動可在毫秒等級上完成。舉例而言，小型調整可係約或小於0.45 mm+/- 50微米，而大型調整係約2 mm。再者，「快」移動可係0.1到10毫秒之間，而「慢」移動可係10到30毫秒之間。所給定數量僅為示例，不必然限制所描述之特徵或行動。結論 雖然已使用特定於結構特徵及/或方法論行動的語言描述數個實施例，應理解到，申請專利範圍不必然限制於所描述之特定特徵或行動。反之，特定特徵與行動係以作為實行所請求主題之闡釋性形式揭露。進一步言，本文中用語「可、可能(may)」之使用係用以指出某些特徵可能使用於一或多個各種實施例中，但不必然用於所有實施例中。
100:設備/直接轉移設備 102:晶圓黏帶/晶圓基材 104:晶圓黏帶/產品基材 106:產品基材輸送機構 108:晶圓黏帶輸送機構 110:產品基材框架 112:晶圓黏帶框架 114:轉移機構/點矩陣轉移頭 116:導向頭 118:衝擊絲/針 118(1):衝擊絲 118(2):衝擊絲 118(n):衝擊絲 120:孔洞 122:致動器 124:半導體裝置晶粒/晶粒 126:電路引線 202:衝擊絲 204:晶粒 206:電路引線 302:衝擊絲 304:半導體裝置晶粒 306:電路引線 400:程序 402:步驟 404:步驟 406:步驟 502:衝擊絲 504:半導體裝置晶粒 506:電路引線 602:衝擊絲 604:半導體裝置晶粒 606:電路引線 700:程序/方法 702:步驟 704:步驟 706:步驟 708:步驟 710:步驟 712:步驟 714:步驟 716:步驟 718:步驟 A:部位/位置 B:部位/位置 C:部位/位置 D:位置
以下提供之詳細描述參照隨附圖示。於圖中，標號之最左位用以識別該標號首次出現之圖號。不同圖中使用相同標號來代表相似或相同之項目。再者，圖式可視為提供個別圖中各自部件之相對尺寸的約略描繪。然而，圖式並不按比例，在個別圖內與不同圖間，個別部件之相對尺寸可與所描繪有差異。具體而言，某些圖可以某個尺寸或形狀描繪部件，但其他圖可用較大比例或不同形狀來描繪同樣的部件，以達清晰表示的目的。
圖1表示根據本揭露一實施例之於轉移前位置的直接轉移設備的示意圖。
圖2繪示根據本揭露一實施例之呈多節距組態的直接轉移設備及電路引線和半導體裝置晶粒之自上而下的示意表示圖。
圖3繪示根據本揭露一實施例之一匹配節距之轉移設備及電路引線和半導體裝置晶粒之自上而下的示意表示圖。
圖4繪示根據本揭露一實施例之一種判定直接轉移設備的複數個衝擊絲的組態之方法。
圖5根據本揭露一實施例繪示自上而下的示意表示圖，表示以多節距組態排列的複數個衝擊絲、以及轉移設備用來轉移半導體裝置晶粒可做出的示例性移動。
圖6根據本揭露一實施例繪示自上而下的示意表示圖，表示以匹配節距組態排列的複數個衝擊絲、以及轉移設備用來轉移半導體裝置晶粒可做出的示例性移動。
圖7繪示根據本揭露一實施例之一種對轉移半導體設備晶粒的轉移設備所做出調整進行判定之方法。
100:設備/直接轉移設備
102:晶圓黏帶/晶圓基材
104:晶圓黏帶/產品基材
106:產品基材輸送機構
108:晶圓黏帶輸送機構
110:產品基材框架
112:晶圓黏帶框架
114:轉移機構/點矩陣轉移頭
116:導向頭
118(1):衝擊絲
118(2):衝擊絲
118(N):衝擊絲
120:孔洞
122:致動器
124:半導體裝置晶粒/晶粒
126:電路引線

Claims (20)

  1. 一種用於半導體裝置之轉移方法，其包含：判定被設置於一轉移頭中的一或多個衝擊絲、一第一基材上之一或多個半導體裝置晶粒以及一第二基材上之一或多個轉移部位之位置；判定該第二基材上是否在至少兩個位置上有至少一衝擊絲、至少一半導體裝置晶粒以及至少一轉移部位已經對準至一臨限容差內；以及藉由至少兩個衝擊絲將至少兩個半導體裝置晶粒從一晶圓黏帶轉移至一產品基材上的至少兩個轉移部位，該轉移至少部分基於對在至少兩個位置上有至少一衝擊絲、至少一半導體裝置晶粒以及至少一轉移部位已經對準至該臨限容差內之判定，其中該至少兩個衝擊絲之個別衝擊絲具獨立可致動性。
  2. 如請求項1之方法，其中該轉移頭係一點矩陣轉移頭。
  3. 如請求項1之方法，其中該第一基材係一晶圓黏帶。
  4. 如請求項1之方法，其中該第二基材係在其上具有一或多個電路引線之一電路基材，並且其中判定該一或多個轉移部位之位置包括沿設置在該電路基材上之該一或多個電路引線判定該一或多個轉移部位之位置。
  5. 如請求項1之方法，其中判定該一或多個衝擊絲、該一或多個半導體 裝置晶粒以及該一或多個轉移部位之位置包括判定該一或多個衝擊絲、該一或多個半導體裝置晶粒以及該一或多個轉移部位相對於彼此之位置。
  6. 如請求項1之方法，其中該方法進一步包含調整該一或多個衝擊絲、該一或多個半導體裝置晶粒或該一或多個電路引線中至少一者之位置，該調整至少部分基於對於該至少兩個衝擊絲、該至少兩個半導體裝置晶粒以及該至少兩個轉移部位已經對準至該臨限容差以下之判定。
  7. 如請求項6之方法，其中該方法進一步包含：判定該調整是否包括在一預定距離臨限值以上或以下的一調整距離；在一第一移動軸上完成該調整，該完成係至少部分基於對於該調整距離係在一預定距離臨限值以下之判定；以及在一第二移動軸上完成該調整，該完成係至少部分基於對於該調整距離係在一預定距離臨限值以上之判定，其中該第一移動軸以一第一行進速率完成該調整，且該第二移動軸以一第二行進速率完成該調整，該第二行進速率大於該第一行進速率。
  8. 如請求項1之方法，其中將該至少兩個半導體裝置晶粒從該第一基材轉移至該至少兩個轉移部位包括致動該至少兩個衝擊絲以將該等半導體裝置晶粒下壓，使得該至少兩個半導體裝置晶粒從該第一基材拆離並附接至該第二基材上之該至少兩個轉移部位。
  9. 如請求項1之方法，其中將該至少兩個半導體裝置晶粒從該第一基材轉移至該至少兩個轉移部位包括致動該一或多個衝擊絲中所有與各別半導體裝置晶粒以及轉移部位已經對準至該臨限容差內者。
  10. 一種用於對半導體裝置晶粒執行從一第一基材至一第二基材上轉移部位的直接轉移之設備，該設備包含：一或多個處理器；以及一或多個電腦可讀取媒體，其所儲存指令被該一或多個處理器執行時，造成該一或多個處理器進行包括下列之操作：判定複數個衝擊絲、複數個半導體裝置晶粒以及複數個轉移部位之位置；判定該複數個衝擊絲、該複數個半導體裝置晶粒以及該複數個轉移部位之各者中有二或更多者已經對準至一臨限容差內；調整該複數個衝擊絲、該複數個半導體裝置晶粒或該複數個轉移部位之至少一者之位置，該調整至少部分基於對於二或更多個衝擊絲、二或更多個半導體裝置晶粒以及二或更多個轉移部位已經對準至該臨限容差以下之判定；以及致動該二或更多個衝擊絲，使得該二或更多個衝擊絲轉移該二或更多個半導體裝置晶粒，使得該二或更多個半導體裝置晶粒從該第一基材拆離並附接至該第二基材上之該二或更多個轉移部位，該致動至少部分基於對於調整該複數個衝擊絲、該複數個半導體裝置晶粒或該複數個電路引線之位置的完成。
  11. 如請求項10之設備，其中該等操作進一步包括將該複數個衝擊絲與該複數個轉移部位之多個各別轉移部位對準。
  12. 如請求項11之設備，其中調整該複數個衝擊絲、該複數個半導體裝置晶粒或該複數個轉移部位中至少一者之位置包括相對於該複數個衝擊絲以及該複數個轉移部位而調整該複數個半導體裝置晶粒。
  13. 如請求項10之設備，其中調整該複數個衝擊絲、該複數個半導體裝置晶粒或該複數個電路引線中至少一者之位置包括判定一需要最少量調整之部位，以充分對準該二或更多個衝擊絲、該二或更多個半導體裝置晶粒以及該二或更多個轉移部位。
  14. 如請求項10之設備，其中該等操作進一步包括判定對於完成將該複數個半導體裝置晶粒從該第一基材轉移至該第二基材上的該複數個轉移部位而言必要的多個調整，該判定至少部分基於完成該等調整需要的一最短距離或一最短時間。
  15. 如請求項10之設備，其中致動該二或更多個衝擊絲包括致動該複數個衝擊絲中的已與各別半導體裝置晶粒以及轉移部位對準至該臨限容差內之各衝擊絲。
  16. 如請求項10之設備，其中調整該複數個衝擊絲、該複數個半導體裝置晶粒或該複數個轉移部位中至少一者之位置包括： 判定該調整是否包括在一預定距離臨限值以上或以下之一調整距離；在一第一移動軸上完成該調整，該完成係至少部分基於對於該調整距離係在一預定距離臨限值以下之判定；以及在一第二移動軸上完成該調整，該完成係至少部分基於對於該調整距離係在一預定距離臨限值以上之判定，其中該第一移動軸以一第一行進速率完成該調整，且該第二移動軸以一第二行進速率完成該調整，該第二行進速率大於該第一行進速率。
  17. 一種用於將半導體裝置晶粒從一第一基材轉移至一第二基材上的轉移部位之方法，該方法包含：判定一轉移頭與設置於該轉移頭上的多個衝擊絲、多個半導體裝置晶粒以及多個轉移部位之一第一部位；判定該多個衝擊絲之至少一衝擊絲、該多個半導體裝置晶粒之至少一半導體裝置晶粒以及該多個轉移部位之至少一轉移部位是否已經對準至一臨限容差內；調整該至少一衝擊絲、該至少一半導體裝置晶粒或該至少一轉移部位之一或多者，使得該至少一衝擊絲、該至少一半導體裝置晶粒以及該至少一轉移部位經對準至該臨限容差內；經由該至少一衝擊絲轉移該至少一半導體裝置晶粒，使得該至少一半導體裝置晶粒從該第一基材拆離並附接至該第二基材上的該至少一轉移部位；判定該轉移頭之該第一部位處是否有待轉移的額外半導體裝置晶 粒；以及輸送該轉移頭至一第二部位，該輸送至少部分基於對該轉移頭之該第一部位處沒有待轉移的額外半導體裝置晶粒之判定。
  18. 如請求項17之方法，其中調整該至少一衝擊絲、該至少一半導體裝置晶粒或該至少一轉移部位之一或多者係於具有一第一行進速率之一第一移動軸上實施。
  19. 如請求項18之方法，其中輸送該轉移頭至該第二部位係於具有一第二行進速率之一第二移動軸上實施，該第二行進速率大於該第一行進速率。
  20. 如請求項17之方法，其中轉移該至少一半導體裝置晶粒包括轉移已與該多個衝擊絲之各別者以及該多個轉移部位之各別者對準至該臨限容差內的所有半導體裝置晶粒。
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