TWI739974B - Polishing composition - Google Patents

Polishing composition Download PDF

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TWI739974B
TWI739974B TW106145227A TW106145227A TWI739974B TW I739974 B TWI739974 B TW I739974B TW 106145227 A TW106145227 A TW 106145227A TW 106145227 A TW106145227 A TW 106145227A TW I739974 B TWI739974 B TW I739974B
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abrasive grains
silica abrasive
polishing composition
polishing
rsp
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TW106145227A
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TW201831624A (en
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江澤俊二
大藤健
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日商霓塔杜邦股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
    • Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
    • Y02A90/30—Assessment of water resources

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  • Organic Chemistry (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

本發明提供一種可獲得較高研磨速度之研磨用組合物。本發明之研磨用組合物包含二氧化矽研磨粒、pH值調整劑、及水。二氧化矽研磨粒與水之親和性AV為0.51以上，親和性AV係由下式(1)表示。 AV＝Rsp/TSA (1) 式(1)中，Rsp係由下式(2)表示，TSA為二氧化矽研磨粒之總表面積。 Rsp＝(Rav/Rb)－1 (2) 式(2)中，Rav係於使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。Rb係於未使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。The present invention provides a polishing composition that can obtain a higher polishing speed. The polishing composition of the present invention contains silica abrasive grains, a pH adjuster, and water. The affinity AV of silica abrasive grains to water is 0.51 or more, and the affinity AV is represented by the following formula (1). AV=Rsp/TSA (1) In formula (1), Rsp is represented by the following formula (2), and TSA is the total surface area of silica abrasive grains. Rsp=(Rav/Rb)-1 (2) In formula (2), Rav is the reciprocal of the NMR relaxation time observed in the state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed without dispersing the silica abrasive grains.

Description

研磨用組合物Polishing composition

本發明係關於一種研磨用組合物。The present invention relates to a polishing composition.

藍寶石非常硬為莫氏硬度9，且化學穩定性較高，故而為難以高效率研磨之材料。因此，於藍寶石基板之製造中進行長時間之研磨。 日本專利特開2015-196704號公報揭示用於藍寶石基板之研磨之研磨用組合物。該研磨用組合物中，二氧化矽之BET(Brunauer-Emmett-Teller，布厄特)比表面積為30 m2 /g以上，且NMR(Nuclear Magnetic Resonance，核磁共振)比表面積為10 m2 /g以上，以能夠使研磨速度相對較高且長時間維持。Sapphire is very hard with a Mohs hardness of 9, and has high chemical stability, so it is a material that is difficult to grind efficiently. Therefore, long-term polishing is performed in the manufacture of sapphire substrates. Japanese Patent Laid-Open No. 2015-196704 discloses a polishing composition for polishing a sapphire substrate. In the polishing composition, the BET (Brunauer-Emmett-Teller, Buert) specific surface area of silicon dioxide is 30 m 2 /g or more, and the NMR (Nuclear Magnetic Resonance, nuclear magnetic resonance) specific surface area is 10 m 2 /g. g or more, so that the polishing rate can be relatively high and maintained for a long time.

如上所述，為了縮短研磨時間，期待較高研磨速度，但若為先前之研磨組合物，則無法獲得較高研磨速度。 本發明之目的在於提供一種可獲得較高研磨速度之研磨用組合物。 本發明之一實施形態之研磨用組合物包含二氧化矽研磨粒、pH值調整劑、及水。二氧化矽研磨粒與水之親和性AV為0.51以上，親和性AV係由下式(1)表示。 AV＝Rsp/TSA (1) 式(1)中，Rsp係由下式(2)表示，TSA為二氧化矽研磨粒之總表面積。 Rsp＝(Rav/Rb)－1 (2) 式(2)中，Rav係於使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。Rb係於未使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。 根據本發明，可獲得較高研磨速度。As mentioned above, in order to shorten the polishing time, a higher polishing rate is expected, but if it is the previous polishing composition, a higher polishing rate cannot be obtained. The object of the present invention is to provide a polishing composition that can obtain a higher polishing speed. The polishing composition of one embodiment of the present invention includes silica abrasive grains, a pH adjuster, and water. The affinity AV of silica abrasive grains to water is 0.51 or more, and the affinity AV is represented by the following formula (1). AV=Rsp/TSA (1) In formula (1), Rsp is represented by the following formula (2), and TSA is the total surface area of silica abrasive grains. Rsp=(Rav/Rb)-1 (2) In formula (2), Rav is the reciprocal of the NMR relaxation time observed in the state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed without dispersing the silica abrasive grains. According to the present invention, a higher grinding speed can be obtained.

本發明者等人為了解決上述課題而進行了各種研究。其結果為，獲得以下見解。 與溶劑之親和性較高之研磨粒容易潤濕，分散性良好。另一方面，與溶劑之親和性較低之研磨粒不易潤濕，而容易引起研磨粒之凝聚。若使用分散性良好之研磨粒，則可藉由抑制研磨時之研磨粒之凝聚，使研磨粒有效率地發揮作用，而提高研磨速度。可認為若分散性良好，則與研磨對象物之接觸點及接觸次數增加，藉此研磨速度變高。可認為於親水性較高之研磨粒中，由於覆蓋表面之水分子而妨礙研磨粒間之接觸，藉此可抑制凝聚，而於親水性較低之研磨粒中，無法完全防止研磨粒間之接觸，故而容易引起凝聚。 本發明係基於該等見解而完成。以下，對本發明之一實施形態之研磨用組合物進行詳細說明。 本發明之一實施形態之研磨用組合物包含二氧化矽研磨粒、pH值調整劑、及水。二氧化矽研磨粒與水之親和性AV為0.51以上，且親和性AV係由下式(1)表示。 AV＝Rsp/TSA (1) 式(1)中，Rsp係由下式(2)表示，TSA為二氧化矽研磨粒之總表面積。 Rsp＝(Rav/Rb)－1 (2) 式(2)中，Rav係於使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。Rb係於未使二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。 二氧化矽研磨粒可使用在該領域中常用者，例如可使用膠體二氧化矽、發煙二氧化矽等。 二氧化矽研磨粒之含量為研磨用組合物整體之0.5～60質量%。二氧化矽粒子之含量之上限較佳為50質量%，進而較佳為40質量%。二氧化矽粒子之含量之下限較佳為1質量%，進而較佳為5質量%。 本實施形態之研磨用組合物進而包含pH值調整劑。作為用於將研磨用組合物調整至鹼性側之化合物，例如可列舉：氫氧化鉀、氫氧化鈉、碳酸氫鉀、碳酸鉀、碳酸氫鈉、碳酸鈉等鹼性化合物。作為用於將研磨用組合物調整至酸性側之化合物，例如可列舉：鹽酸、硫酸、硝酸、磷酸等酸性化合物。本實施形態之研磨用組合物之pH值較佳為8.5～11.0。 本實施形態之研磨用組合物中，除上述以外，可任意地調配在研磨用組合物之領域中通常已知之調配劑。 本實施形態之研磨用組合物係藉由將二氧化矽研磨粒、pH值調整劑、及其他調配材料適宜地混合並加水而製作。或者，本實施形態之研磨用組合物可藉由將二氧化矽研磨粒、pH值調整劑、及其他調配材料依序混合至水中而製作。作為將該等成分混合之方法，可使用均化器、超音波等在研磨用組合物之技術領域中常用之方法。 以上所說明之研磨用組合物於用水稀釋成為適當之濃度後，被用於藍寶石基板之研磨。 [實施例] 以下，藉由實施例對本發明更具體地進行說明。本發明並不限定於該等實施例。 製作表1所示之實施例1～4及比較例1～3之研磨用組合物。 [表1]

Figure 106145227-A0304-0001
[粒徑之測定方法] 二氧化矽研磨粒之平均粒徑係使用大塚電子股份有限公司製造之粒徑測定系統「ELS-Z2」，藉由動態光散射法而測定。 [中值粒徑之測定方法] 二氧化矽研磨粒之中值粒徑(D50 )係使用美國CPS Instruments公司製造之「碟式離心式高解析粒度分佈測定裝置(DC24000UHR)」，藉由微差式離心沈降法(Differential Centrifugal Sedimentation)測定粒度分佈，並將該粒度分佈轉換為累積分佈，求出該累積分佈中之累積達到50%之粒徑。 [親和性之測定方法] 藉由以下所說明之脈衝NMR，對二氧化矽研磨粒(以下亦簡稱為「粒子」)與分散介質之界面特性進行評價。 接觸或吸附於粒子表面之分散介質分子與分散介質本體中之分散介質分子(未與粒子表面接觸之自由狀態之分散介質分子)對磁場變化之回應不同。一般而言，吸附於粒子表面之液體分子之運動受限制，而本體液中之液體分子可自由移動。其結果為，吸附於粒子表面之液體分子之NMR弛豫時間較本體液中之液體分子之NMR弛豫時間變短。於使粒子分散之液體中觀測之NMR弛豫時間成為反映粒子表面上之液體體積濃度與自由狀態之液體體積濃度的2個弛豫時間之平均值。 再者，於使粒子分散之液體中觀測之弛豫時間常數Rav係由下式表示。 Rav＝PsRs＋PbRb Pb：本體液之體積濃度 Ps：粒子表面積上之液體之體積濃度 Rs：吸收至粒子表面上之吸收層液體分子之弛豫時間常數 Rb：本體液中之液體分子之弛豫時間常數 又，比表面積S與弛豫時間常數Rav之關係係由下式表示。 Rav＝ΨPSLρP(Rs－Rb)＋Rb ΨP：粒子體積濃度 L：吸收至粒子表面上之液體吸收層之厚度 ρP：粒子密度 將於使粒子分散之液體中觀測之弛豫時間之倒數(NMR弛豫時間常數)設為Rav，將於使粒子分散前之液體中觀測之弛豫時間之倒數(NMR弛豫時間常數)設為Rb，計算Rsp＝(Rav/Rb)－1。Rsp係分散介質與粒子表面之親和性之指標，表示若粒子之總表面積相同，則Rsp越大，分散介質與粒子表面之親和性越高。 於本實施形態中，將Rsp除以粒子之總表面積所得之值定義為該研磨用組合物中之粒子與分散介質之「親和性」。 Rav、Rb係使用Xigo nanotools公司製造之脈衝NMR裝置Acorn area測定弛豫時間(具體而言，使二氧化矽研磨粒分散後之NMR弛豫時間、及使二氧化矽研磨粒分散前之NMR弛豫時間)，並求出其倒數。測定條件設為磁場：0.3 T、測定頻率：13 MHz、測定核：1 H NHR、測定方法：CPMG(Carr-Purcell-Meiboom-Gill)脈衝序列法、樣品量：1 ml、溫度：25℃。 粒子之總表面積TSA係根據下式而求出。 TSA＝S×V×ΨP×ρP S：粒子比表面積 V：照射射頻波之部分之NMR管體體積 ΨP：粒子體積濃度 ρP：粒子密度 粒子比表面積S係根據下式而求出。 S＝6/(n×ρP) n：粒子密度 粒子體積濃度ΨP係根據下式而求出。 ΨP＝(λ/100)/[(1－(λ/100))×ρP]×κ λ：粒子之重量%濃度 κ：空白樣品(分散介質)之密度 繼而，使用所製作之實施例1～4及比較例1～3之研磨用組合物，對直徑4英吋之藍寶石基板之c面進行研磨。研磨裝置使用Strasbaugh公司製造之單面研磨機。研磨墊使用胺基甲酸酯之研磨墊。以稀釋後之二氧化矽研磨粒之含量成為19重量%之方式將研磨用組合物稀釋，並以300 ml/分鐘之供給速度進行供給。設為壓盤之旋轉速度為140 rpm、研磨頭之旋轉速度為130 rpm、研磨負荷為500 gf/cm2 ，而進行15分鐘之研磨。 [研磨速度之測定方法] 對研磨前後之藍寶石晶圓之質量變化量進行測定，算出藍寶石晶圓之厚度變化量，將每單位時間之厚度變化量設為研磨速度。 [試驗結果之評價] 由於在粒子比表面積S相同時，Rsp越大表示親和性越高，故而圖1所示之圖線之斜率越大，親和性越高。實施例1～4之親和性高於比較例1～3之親和性。如前述之表1所記載般，親和性較高之實施例1～4相較於親和性較低之比較例1～3，可獲得高達約2～4倍之研磨速度。 以上，對本發明之實施形態進行了說明。上述實施形態僅為用於實施本發明之例示。因此，本發明並不限定於上述實施形態，於不脫離其主旨之範圍內，可將上述實施形態適當變化而實施。The inventors of the present invention have conducted various studies in order to solve the above-mentioned problems. As a result, the following findings were obtained. The abrasive grains with higher affinity with solvents are easy to wet and have good dispersibility. On the other hand, abrasive grains with a low affinity for solvents are not easy to wet and easily cause agglomeration of abrasive grains. If abrasive grains with good dispersibility are used, the abrasive grains can function efficiently by suppressing the agglomeration of the abrasive grains during polishing, and the polishing speed can be increased. It is considered that if the dispersibility is good, the contact point with the polishing object and the number of contacts increase, thereby increasing the polishing speed. It can be considered that in the abrasive grains with higher hydrophilicity, the contact between the abrasive grains is hindered by the water molecules covering the surface, thereby inhibiting aggregation, while in the abrasive grains with lower hydrophilicity, the contact between the abrasive grains cannot be completely prevented. Contact, it is easy to cause agglomeration. The present invention has been completed based on these findings. Hereinafter, the polishing composition of one embodiment of the present invention will be described in detail. The polishing composition of one embodiment of the present invention includes silica abrasive grains, a pH adjuster, and water. The affinity AV of silica abrasive grains to water is 0.51 or more, and the affinity AV is represented by the following formula (1). AV=Rsp/TSA (1) In formula (1), Rsp is represented by the following formula (2), and TSA is the total surface area of silica abrasive grains. Rsp=(Rav/Rb)-1 (2) In formula (2), Rav is the reciprocal of the NMR relaxation time observed in the state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed without dispersing the silica abrasive grains. The silica abrasive particles can be those commonly used in the field, for example, colloidal silica, fuming silica, etc. can be used. The content of silica abrasive grains is 0.5-60% by mass of the entire polishing composition. The upper limit of the content of silicon dioxide particles is preferably 50% by mass, and more preferably 40% by mass. The lower limit of the content of silicon dioxide particles is preferably 1% by mass, and more preferably 5% by mass. The polishing composition of this embodiment further contains a pH adjuster. Examples of compounds for adjusting the polishing composition to the alkaline side include alkaline compounds such as potassium hydroxide, sodium hydroxide, potassium hydrogen carbonate, potassium carbonate, sodium hydrogen carbonate, and sodium carbonate. Examples of the compound for adjusting the polishing composition to the acidic side include acidic compounds such as hydrochloric acid, sulfuric acid, nitric acid, and phosphoric acid. The pH of the polishing composition of this embodiment is preferably 8.5 to 11.0. In the polishing composition of this embodiment, in addition to the above, a compounding agent generally known in the field of polishing composition can be arbitrarily blended. The polishing composition of the present embodiment is prepared by appropriately mixing silica abrasive grains, a pH adjuster, and other preparation materials, and adding water. Alternatively, the polishing composition of this embodiment can be prepared by sequentially mixing silica abrasive grains, pH adjusters, and other compounding materials into water. As a method of mixing these components, a method commonly used in the technical field of polishing compositions, such as a homogenizer, ultrasonic waves, and the like, can be used. The polishing composition described above is diluted with water to an appropriate concentration, and then used for polishing a sapphire substrate. [Examples] Hereinafter, the present invention will be described in more detail with examples. The present invention is not limited to these embodiments. The polishing compositions of Examples 1 to 4 and Comparative Examples 1 to 3 shown in Table 1 were prepared. [Table 1]
Figure 106145227-A0304-0001
 [Method of measuring particle size] The average particle size of the silica abrasive grains was measured by the dynamic light scattering method using the particle size measurement system "ELS-Z2" manufactured by Otsuka Electronics Co., Ltd. [Method for measuring median particle size] The median particle size (D 50 ) of the silica abrasive grains is made by the "Dish Centrifugal High Resolution Particle Size Distribution Analyzer (DC24000UHR)" manufactured by CPS Instruments in the United States. The Differential Centrifugal Sedimentation method measures the particle size distribution, and converts the particle size distribution into a cumulative distribution, and calculates the cumulative distribution of 50% of the particle size. [Method for Measuring Affinity] The interface characteristics of silica abrasive grains (hereinafter also referred to as "particles") and the dispersion medium were evaluated by pulsed NMR described below. The dispersion medium molecules in contact with or adsorbed on the particle surface and the dispersion medium molecules in the dispersion medium body (the dispersion medium molecules in the free state that are not in contact with the particle surface) respond differently to changes in the magnetic field. Generally speaking, the movement of the liquid molecules adsorbed on the particle surface is restricted, and the liquid molecules in the bulk liquid can move freely. As a result, the NMR relaxation time of the liquid molecules adsorbed on the particle surface is shorter than the NMR relaxation time of the liquid molecules in the bulk liquid. The NMR relaxation time observed in the liquid in which the particles are dispersed becomes the average of the two relaxation times reflecting the liquid volume concentration on the particle surface and the liquid volume concentration in the free state. Furthermore, the relaxation time constant Rav observed in the liquid in which the particles are dispersed is expressed by the following formula. Rav = PsRs + PbRb Pb: volume concentration of the bulk liquid Ps: volume concentration of the liquid on the particle surface area Rs: relaxation time constant of the liquid molecules of the absorbent layer absorbed on the particle surface Rb: relaxation time constant of the liquid molecules in the bulk liquid In addition, the relationship between the specific surface area S and the relaxation time constant Rav is expressed by the following equation. Rav=ΨPSLρP(Rs-Rb)+Rb ΨP: particle volume concentration L: thickness of the liquid absorption layer absorbed on the particle surface ρP: particle density will be the reciprocal of the relaxation time observed in the liquid in which the particles are dispersed (NMR relaxation The time constant) is set to Rav, the reciprocal of the observed relaxation time (NMR relaxation time constant) in the liquid before the particles are dispersed is set to Rb, and Rsp=(Rav/Rb)-1 is calculated. Rsp is an indicator of the affinity between the dispersion medium and the surface of the particle. If the total surface area of the particle is the same, the larger the Rsp, the higher the affinity between the dispersion medium and the surface of the particle. In this embodiment, the value obtained by dividing Rsp by the total surface area of the particles is defined as the "affinity" between the particles in the polishing composition and the dispersion medium. Rav and Rb are used to measure the relaxation time (specifically, the NMR relaxation time after the silica abrasive grains are dispersed, and the NMR relaxation time before the silica abrasive grains are dispersed) using the pulse NMR device Acorn area manufactured by Xigo nanotools Henan time), and find the reciprocal. The measurement conditions were magnetic field: 0.3 T, measurement frequency: 13 MHz, measurement core: 1 H NHR, measurement method: CPMG (Carr-Purcell-Meiboom-Gill) pulse sequence method, sample volume: 1 ml, temperature: 25°C. The total surface area TSA of the particles is calculated according to the following formula. TSA=S×V×ΨP×ρP S: particle specific surface area V: NMR tube volume of the part irradiated with radio frequency waves ΨP: particle volume concentration ρP: particle density The particle specific surface area S is calculated according to the following formula. S=6/(n×ρP) n: particle density The particle volume concentration ΨP is calculated according to the following formula. ΨP=(λ/100)/[(1－(λ/100))×ρP]×κ λ: the weight% concentration of the particles κ: the density of the blank sample (dispersion medium) Then, use the prepared example 1~ The polishing composition of 4 and Comparative Examples 1 to 3 polished the c-plane of a sapphire substrate with a diameter of 4 inches. The grinding device uses a single-sided grinding machine manufactured by Strasbaugh Company. The polishing pad uses a urethane polishing pad. The polishing composition was diluted so that the content of the diluted silica abrasive grains became 19% by weight, and the polishing composition was supplied at a supply rate of 300 ml/min. The rotation speed of the platen is 140 rpm, the rotation speed of the polishing head is 130 rpm, and the polishing load is 500 gf/cm 2 , and the polishing is performed for 15 minutes. [Measurement method of polishing rate] Measure the mass change of the sapphire wafer before and after polishing, calculate the thickness change of the sapphire wafer, and set the thickness change per unit time as the polishing rate. [Evaluation of Test Results] When the specific surface area S of the particles is the same, the larger the Rsp, the higher the affinity, so the greater the slope of the graph shown in Figure 1, the higher the affinity. The affinity of Examples 1-4 is higher than that of Comparative Examples 1-3. As described in Table 1 above, Examples 1 to 4, which have higher affinity, can achieve a polishing speed that is about 2 to 4 times as high as that of Comparative Examples 1 to 3, which have lower affinity. In the foregoing, the embodiments of the present invention have been described. The above-mentioned embodiments are merely examples for implementing the present invention. Therefore, the present invention is not limited to the above-mentioned embodiment, and the above-mentioned embodiment can be appropriately changed and implemented within a range that does not deviate from the gist.

圖1係針對實施例1～4及比較例1～3表示Rsp與二氧化矽研磨粒之總表面積之關係的圖表。Fig. 1 is a graph showing the relationship between Rsp and the total surface area of silica abrasive grains for Examples 1 to 4 and Comparative Examples 1 to 3.

Claims (1)

一種研磨用組合物，其包含： 二氧化矽研磨粒、 pH值調整劑、及 水；且 上述二氧化矽研磨粒與上述水之親和性AV為0.51以上，上述親和性AV係由下式(1)表示： AV＝Rsp/TSA (1) 式(1)中，Rsp係由下式(2)表示，TSA為上述二氧化矽研磨粒之總表面積； Rsp＝(Rav/Rb)－1 (2) 式(2)中，Rav係於使上述二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數，Rb係於未使上述二氧化矽研磨粒分散之狀態下觀測之NMR弛豫時間之倒數。A polishing composition, comprising: silica abrasive grains, a pH value adjuster, and water; and the affinity AV of the silica abrasive grains and the water is 0.51 or more, and the affinity AV is represented by the following formula ( 1) Representation: AV=Rsp/TSA (1) In formula (1), Rsp is represented by the following formula (2), TSA is the total surface area of the aforementioned silica abrasive grains; Rsp=(Rav/Rb)-1 ( 2) In formula (2), Rav is the reciprocal of the NMR relaxation time observed in the state where the silica abrasive grains are dispersed, and Rb is the NMR relaxation time observed in the state where the silica abrasive grains are not dispersed. The reciprocal of Yu time.
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