CN110072966B - Polishing composition - Google Patents
Polishing composition Download PDFInfo
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- CN110072966B CN110072966B CN201780077276.1A CN201780077276A CN110072966B CN 110072966 B CN110072966 B CN 110072966B CN 201780077276 A CN201780077276 A CN 201780077276A CN 110072966 B CN110072966 B CN 110072966B
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- abrasive grains
- silica abrasive
- rsp
- polishing
- polishing composition
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- 238000005498 polishing Methods 0.000 title claims abstract description 49
- 239000000203 mixture Substances 0.000 title claims abstract description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 239000006061 abrasive grain Substances 0.000 claims abstract description 39
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract 2
- 239000002245 particle Substances 0.000 description 40
- 239000007788 liquid Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- 239000002612 dispersion medium Substances 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052594 sapphire Inorganic materials 0.000 description 7
- 239000010980 sapphire Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 5
- 238000002156 mixing Methods 0.000 description 5
- 239000003002 pH adjusting agent Substances 0.000 description 5
- 210000001124 body fluid Anatomy 0.000 description 4
- 239000010839 body fluid Substances 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000001186 cumulative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004220 aggregation Methods 0.000 description 2
- 230000002776 aggregation Effects 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L sodium carbonate Substances [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 101000650775 Boana raniceps Raniseptin-1 Proteins 0.000 description 1
- 238000000685 Carr-Purcell-Meiboom-Gill pulse sequence Methods 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- UIIMBOGNXHQVGW-DEQYMQKBSA-M Sodium bicarbonate-14C Chemical compound [Na+].O[14C]([O-])=O UIIMBOGNXHQVGW-DEQYMQKBSA-M 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 125000003275 alpha amino acid group Chemical group 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000003556 assay Methods 0.000 description 1
- 150000007514 bases Chemical class 0.000 description 1
- 239000012496 blank sample Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000008119 colloidal silica Substances 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000002296 dynamic light scattering Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910021485 fumed silica Inorganic materials 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000011736 potassium bicarbonate Substances 0.000 description 1
- 229910000028 potassium bicarbonate Inorganic materials 0.000 description 1
- 235000015497 potassium bicarbonate Nutrition 0.000 description 1
- 229910000027 potassium carbonate Inorganic materials 0.000 description 1
- 235000011181 potassium carbonates Nutrition 0.000 description 1
- TYJJADVDDVDEDZ-UHFFFAOYSA-M potassium hydrogencarbonate Chemical compound [K+].OC([O-])=O TYJJADVDDVDEDZ-UHFFFAOYSA-M 0.000 description 1
- 235000011118 potassium hydroxide Nutrition 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- 235000017550 sodium carbonate Nutrition 0.000 description 1
- 235000011121 sodium hydroxide Nutrition 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A90/00—Technologies having an indirect contribution to adaptation to climate change
- Y02A90/30—Assessment of water resources
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention provides a polishing composition capable of obtaining a high polishing rate. The polishing composition comprises: silicon dioxide abrasive grains, a pH regulator and water. The affinity AV of the silica abrasive grains with water is 0.51 or more, and the affinity AV is represented by the following formula (1). AV ═ Rsp/TSA (1) in formula (1), Rsp is represented by the following formula (2), and TSA is the total surface area of the silica abrasive grains. In formula (2), Rsp ═ Rav/Rb) -1(2), Rav is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are not dispersed.
Description
Technical Field
The present invention relates to a polishing composition.
Background
Sapphire is a material that is very hard, has a mohs hardness of 9, and is chemically stable, and therefore, it is difficult to polish with high efficiency. Therefore, the sapphire substrate is polished for a long time.
Jp 2015-196704 a discloses a polishing composition for polishing a sapphire substrate. In the polishing composition, the BET specific surface area of silica was 30m2A specific surface area of 10m or more in terms of NMR2(ii) at least g so as to be able to maintain the polishing rate at a high level for a long period of time.
Disclosure of Invention
As described above, a high polishing rate is desired for shortening the polishing time, but a high polishing rate cannot be obtained with conventional polishing compositions.
The invention aims to provide a polishing composition which can obtain a high polishing rate.
The polishing composition according to one embodiment of the present invention includes silica abrasive grains, a pH adjuster, and water. The affinity AV of the silica abrasive grains with water is 0.51 or more, and the affinity AV is represented by the following formula (1).
AV＝Rsp/TSA (1)
In formula (1), Rsp is represented by formula (2) below, and TSA is the total surface area of the silica abrasive grains.
Rsp＝(Rav/Rb)-1 (2)
In formula (2), Rav is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are not dispersed.
According to the present invention, a high polishing rate can be obtained.
Drawings
FIG. 1 is a graph showing the relationship between Rsp and the total surface area of silica abrasive grains in examples 1 to 4 and comparative examples 1 to 3.
Detailed Description
The present inventors have made various studies to solve the above problems. As a result, the following findings were obtained.
The abrasive grains having high affinity with the solvent are easily wetted and have good dispersibility. On the other hand, abrasive grains having low affinity with a solvent are not easily wetted, and aggregation of abrasive grains is easily caused. When the abrasive grains having good dispersibility are used, aggregation of the abrasive grains during polishing is suppressed, the abrasive grains can efficiently function, and the polishing rate can be increased. It is considered that when the dispersibility is good, the contact point with the object to be polished and the number of times of contact increase, and thus the polishing rate increases. It is considered that the abrasive grains having high hydrophilicity are inhibited from aggregating by inhibiting the contact between the abrasive grains due to water molecules covering the surface, while the abrasive grains having low hydrophilicity are likely to aggregate because the contact between the abrasive grains cannot be completely prevented.
The present invention has been completed based on these findings. Hereinafter, a polishing composition according to an embodiment of the present invention will be described in detail.
The polishing composition according to one embodiment of the present invention includes silica abrasive grains, a pH adjuster, and water. The affinity AV of the silica abrasive grains with water is 0.51 or more, and the affinity AV is represented by the following formula (1).
AV＝Rsp/TSA (1)
In formula (1), Rsp is represented by formula (2) below, and TSA is the total surface area of the silica abrasive grains.
Rsp＝(Rav/Rb)-1 (2)
In formula (2), Rav is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are dispersed. Rb is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are not dispersed.
The silica abrasive may be any silica abrasive commonly used in the art, and for example, colloidal silica, fumed silica, or the like may be used.
The content of the silica abrasive grains is 0.5 to 60 mass% of the entire polishing composition. The upper limit of the content of the silica particles is preferably 50 mass%, and more preferably 40 mass%. The lower limit of the content of the silica particles is preferably 1% by mass, and more preferably 5% by mass.
The polishing composition of the present embodiment further includes a pH adjuster. Examples of the compound for adjusting the polishing composition to the alkaline side include: and basic compounds such as potassium hydroxide, sodium hydroxide, potassium bicarbonate, potassium carbonate, sodium bicarbonate, and sodium carbonate. Examples of the compound for adjusting the polishing composition to the acidic side include: acidic compounds such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, and the like. The polishing composition of the present embodiment preferably has a pH of 8.5 to 11.0.
In the polishing composition of the present embodiment, in addition to the above, a compounding agent generally known in the field of polishing compositions can be optionally compounded.
The polishing composition of the present embodiment is produced by appropriately mixing silica abrasive grains, a pH adjuster, and other blending materials and adding water. Alternatively, the polishing composition of the present embodiment can be prepared by sequentially mixing silica abrasive grains, a pH adjuster, and other blending materials into water. As a method for mixing these components, a method commonly used in the technical field of polishing compositions, such as a homogenizer and ultrasonic waves, can be used.
The polishing composition described above is diluted with water to an appropriate concentration, and then used for polishing a sapphire substrate.
Examples
The present invention will be described more specifically with reference to examples. The present invention is not limited to these examples.
Polishing compositions of examples 1 to 4 and comparative examples 1 to 3 shown in Table 1 were prepared.
[ Table 1]
| Content (%) | Particle size (nm) | Median particle diameter (nm) | Affinity of the amino acid sequence | pH | Grinding speed (μm/hr) | |
| Example 1 | 19 | 82 | 62 | 0.51 | 10 | 4.3 |
| Example 2 | 19 | 84 | 75 | 0.75 | 10 | 4.1 |
| Example 3 | 19 | 127 | 48 | 0.59 | 10 | 4.2 |
| Example 4 | 19 | 127 | 87 | 0.53 | 10 | 4.0 |
| Comparative example 1 | 19 | 93 | 88 | 0.31 | 10 | 1.7 |
| Comparative example 2 | 19 | 112 | 104 | 0.46 | 10 | 1.6 |
| Comparative example 3 | 19 | 138 | 124 | 0.39 | 10 | 1.1 |
[ method of measuring particle diameter ]
The average particle diameter of the silica abrasive grains was measured by a dynamic light scattering method using a particle diameter measurement system "ELS-Z2" manufactured by Otsuka Denshi K.K.
[ method for measuring median diameter ]
Median particle diameter (D) of the silica abrasive grains50) The particle size distribution was measured by a frequency difference centrifugal sedimentation method using a "disk centrifugal high-resolution particle size distribution measuring apparatus (DC24000 UHR)" manufactured by CPS Instruments in the united states, and the particle size distribution was converted into a cumulative distribution, and the cumulative particle size at which the cumulative particle size distribution was 50% was obtained.
[ method for measuring affinity ]
The interfacial properties between the silica abrasive grains (hereinafter also simply referred to as "particles") and the dispersion medium were evaluated by pulse NMR described below.
The dispersion medium molecules in contact with or adsorbed to the particle surfaces respond differently to changes in the magnetic field than the dispersion medium molecules in the bulk of the dispersion medium (the dispersion medium molecules in a free state that are not in contact with the particle surfaces). In general, the movement of liquid molecules adsorbed to the particle surface is restricted, and liquid molecules in the body fluid can move freely. As a result, the NMR relaxation time of the liquid molecules adsorbed on the particle surface becomes shorter than that of the liquid molecules in the body fluid. The NMR relaxation time observed in the liquid in which the particles are dispersed is an average value of 2 relaxation times reflecting the liquid volume concentration on the particle surface and the liquid volume concentration in a free state.
The relaxation time constant Rav observed in the liquid in which the particles are dispersed is expressed by the following equation.
Rav＝PsRs+PbRb
Pb: volume concentration of body fluid
Ps: volume concentration of liquid over surface area of particle
Rs: relaxation time constant of liquid molecules of the absorption layer absorbed to the particle surface
Rb: relaxation time constant of liquid molecules in body fluid
The relationship between the specific surface area S and the relaxation time constant Rav is expressed by the following equation.
Rav＝ΨPSLρP(Rs-Rb)+Rb
Ψ P: volume concentration of particles
L: thickness of liquid-absorbing layer absorbed to particle surface
ρ P: density of particles
Assuming that Rav is the inverse of the relaxation time observed in the liquid in which the particles are dispersed (NMR relaxation time constant), Rb is the inverse of the relaxation time observed in the liquid before the particles are dispersed (NMR relaxation time constant), Rsp — 1 is calculated. Rsp is an index of affinity between the dispersion medium and the particle surface, and if the total surface area of the particles is the same, the larger Rsp indicates the higher affinity between the dispersion medium and the particle surface.
In the present embodiment, the value obtained by dividing Rsp by the total surface area of the particles is defined as "affinity" between the particles and the dispersion medium in the polishing composition.
Rav and Rb are obtained by measuring the relaxation times (specifically, NMR relaxation time after dispersing silica abrasive grains and NMR relaxation time before dispersing silica abrasive grains) using a pulse NMR apparatus Acorn area manufactured by Xigo nanols, inc. The measurement condition is set to magneticField: 0.3T, measurement frequency: 13MHz, assay nuclei:1h NHR, determination method: CPMG pulse sequence method, sample amount: 1ml, temperature: at 25 ℃.
The total surface area TSA of the particles is determined by the following equation.
TSA＝S×V×ΨP×ρP
S: specific surface area of the particles
V: NMR tube volume of radio wave-irradiated portion
Ψ P: volume concentration of particles
ρ P: density of particles
The particle specific surface area S is determined by the following equation.
S＝6/(n×ρP)
n: density of particles
The particle volume concentration Ψ P was determined according to the following equation.
ΨP＝(λ/100)/[(1-(λ/100))×ρP]×κ
λ: weight% concentration of particles
Kappa: density of blank sample (dispersion medium)
Then, the polishing compositions of examples 1 to 4 and comparative examples 1 to 3 were used to polish the c-plane of a sapphire substrate having a diameter of 4 inches. The grinding apparatus used was a single-side grinder manufactured by Strasbaugh. The polishing pad used was a urethane polishing pad. The polishing composition was diluted so that the content of the diluted silica abrasive grains became 19 wt%, and was supplied at a supply rate of 300 mL/min. The rotation speed of the stage was set to 140rpm, the rotation speed of the polishing head was set to 130rpm, and the polishing load was set to 500gf/cm2Then, the polishing was carried out for 15 minutes.
[ method for measuring polishing Rate ]
The amount of change in the mass of the sapphire wafer before and after polishing was measured, and the amount of change in the thickness of the sapphire wafer was calculated, and the amount of change in the thickness per unit time was used as the polishing rate.
[ evaluation of Experimental results ]
Since a larger Rsp indicates a higher affinity when the specific surface area S of the particle is the same, the higher the slope of the graph shown in fig. 1, the higher the affinity. The affinities of examples 1 to 4 were higher than those of comparative examples 1 to 3. As shown in Table 1, the polishing rates of examples 1 to 4 having high affinity were about 2 to 4 times higher than those of comparative examples 1 to 3 having low affinity.
The embodiments of the present invention have been described above. The above embodiments are merely illustrative for implementing the present invention. Therefore, the present invention is not limited to the above embodiments, and the above embodiments may be modified as appropriate without departing from the scope of the invention.
Claims (1)
1. A polishing composition comprising: silicon dioxide abrasive grains, a pH regulator and water;
the silica abrasive has an affinity AV of 0.51 or more with the water, the affinity AV being represented by the following formula (1):
AV＝Rsp/TSA (1)
in formula (1), Rsp is represented by formula (2) below, TSA is the total surface area of the silica abrasive grains;
Rsp＝(Rav/Rb)-1 (2)
in formula (2), Rav is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are dispersed, and Rb is the reciprocal of the NMR relaxation time observed in a state where the silica abrasive grains are not dispersed.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016-249265 | 2016-12-22 | ||
| JP2016249265 | 2016-12-22 | ||
| PCT/JP2017/044431 WO2018116890A1 (en) | 2016-12-22 | 2017-12-11 | Polishing composition |
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| Publication Number | Publication Date |
|---|---|
| CN110072966A CN110072966A (en) | 2019-07-30 |
| CN110072966B true CN110072966B (en) | 2021-06-15 |
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| JP (1) | JP7061966B2 (en) |
| CN (1) | CN110072966B (en) |
| TW (1) | TWI739974B (en) |
| WO (1) | WO2018116890A1 (en) |
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| EP3876264B1 (en) * | 2018-11-01 | 2024-09-11 | Nissan Chemical Corporation | Polishing composition using polishing particles that have high water affinity |
| US20220228031A1 (en) * | 2019-06-27 | 2022-07-21 | Nissan Chemical Corporation | Polishing composition using polishing particles containing basic substance and having high water affinity |
| CN110514687B (en) * | 2019-09-19 | 2022-11-29 | 上海景瑞阳实业有限公司 | Method and system for testing quality guarantee period of silver powder dispersion system |
| WO2023037930A1 (en) * | 2021-09-07 | 2023-03-16 | 日本化学工業株式会社 | Negative thermal expansion material, method for producing same, and paste |
| DE112021008471T5 (en) * | 2021-12-23 | 2024-09-05 | Fuso Chemical Co., Ltd. | Colloidal silicon dioxide and manufacturing process therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105027267A (en) * | 2013-02-20 | 2015-11-04 | 福吉米株式会社 | Polishing composition |
| CN105038698A (en) * | 2014-04-15 | 2015-11-11 | 福吉米株式会社 | Polishing composition |
| JP2016141765A (en) * | 2015-02-04 | 2016-08-08 | ニッタ・ハース株式会社 | Polishing composition |
| CN106133107A (en) * | 2014-03-31 | 2016-11-16 | 霓达哈斯股份有限公司 | Composition for polishing and Ginding process |
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| JP6589622B2 (en) | 2015-12-22 | 2019-10-16 | 日立化成株式会社 | Polishing liquid, polishing method, semiconductor substrate and electronic device |
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- 2017-12-11 CN CN201780077276.1A patent/CN110072966B/en active Active
- 2017-12-11 JP JP2018557686A patent/JP7061966B2/en active Active
- 2017-12-11 WO PCT/JP2017/044431 patent/WO2018116890A1/en active Application Filing
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105027267A (en) * | 2013-02-20 | 2015-11-04 | 福吉米株式会社 | Polishing composition |
| CN106133107A (en) * | 2014-03-31 | 2016-11-16 | 霓达哈斯股份有限公司 | Composition for polishing and Ginding process |
| CN105038698A (en) * | 2014-04-15 | 2015-11-11 | 福吉米株式会社 | Polishing composition |
| JP2016141765A (en) * | 2015-02-04 | 2016-08-08 | ニッタ・ハース株式会社 | Polishing composition |
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| TWI739974B (en) | 2021-09-21 |
| JPWO2018116890A1 (en) | 2019-10-24 |
| WO2018116890A1 (en) | 2018-06-28 |
| CN110072966A (en) | 2019-07-30 |
| JP7061966B2 (en) | 2022-05-02 |
| TW201831624A (en) | 2018-09-01 |
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