JP7331435B2 - Silica particles, silica sol, polishing composition, polishing method, semiconductor wafer manufacturing method, and semiconductor device manufacturing method - Google Patents

Description

TECHNICAL FIELD The present invention relates to silica particles, silica sol, a polishing composition, a polishing method, a semiconductor wafer manufacturing method, and a semiconductor device manufacturing method.

A polishing method using a polishing liquid is known as a method for polishing the surface of materials such as metals and inorganic compounds. Above all, chemical mechanical polishing (CMP) for final polishing of prime silicon wafers for semiconductors and reclaimed silicon wafers, flattening of interlayer insulating films during semiconductor device manufacturing, formation of metal plugs, formation of embedded wiring, etc. ), the surface state greatly affects the semiconductor characteristics, so the surfaces and end faces of these parts are required to be polished with extremely high precision.

In such precision polishing, a polishing composition containing silica particles is employed, and colloidal silica is widely used as abrasive grains, which are the main component of the composition. Colloidal silica is produced by thermal decomposition of silicon tetrachloride (fumed silica, etc.), by deionization of alkali silicate such as water glass, and by hydrolysis/condensation reaction of alkoxysilane (generally " known as "sol-gel method").

Many studies have been made so far on methods for producing colloidal silica. For example, Patent Documents 1 to 3 and Non-Patent Document 1 disclose methods for producing silica sol by hydrolysis reaction/condensation reaction of alkoxysilane.

JP-A-11-60232 WO2008/123373 WO2008/015943

"Technology and characteristics of high-purity colloidal silica" Shinichi Sugita, JETI, Vol. 61, No. 3, pp58-61, (2013). "Influence of Nodular Colloidal Silica Slurry on Oxide Film CMP", Shinichi Haba et al., 2003 Japan Society for Precision Engineering Autumn Conference, pp. 270, F63. "Development of Abrasives for Semiconductor Integrated Circuit Process" Shinichi Haba, Doctoral Dissertation, Kochi University of Technology, pp. 51-58, 2004.

By the way, generally, silica particles in silica sol obtained by hydrolysis reaction/condensation reaction of alkoxysilane are spherical, cocoon-shaped, irregularly shaped, etc. immediately after synthesis, as disclosed in Non-Patent Document 1. Shows various shapes. In addition, as disclosed in Non-Patent Document 2 and Non-Patent Document 3, when the surface of such silica particles is observed in detail with a scanning electron microscope with very high resolution, unevenness called "humps" may be confirmed. However, observation with a scanning electron microscope with such a very high resolution is not easy, and there is a problem that it is very difficult to visually confirm the surface irregularities of silica particles.

When polishing an object to be polished represented by a silicon wafer, as a means for improving only the polishing rate without changing polishing characteristics such as scratch resistance, the difference in surface unevenness is increased, or the surface unevenness of silica particles is increased. It is conceivable to produce silica particles having a more non-uniform surface state by increasing the number.

Silica particles obtained by the method of producing silica sol by the hydrolysis reaction/condensation reaction of alkoxysilane disclosed in Patent Documents 1 to 3 and Non-Patent Document 1 are obtained from scanning electron micrographs published in the documents. , Since it is difficult to grasp the state of surface unevenness, silica particles having a non-uniform surface state with a large surface unevenness difference or a large number of surface unevenness (hereinafter referred to as "non-uniform surface unevenness state") are produced. It is unknown whether In addition, if it is possible to accurately grasp and track the surface irregularities of silica particles, silica particles having non-uniform surface irregularities can be suitably produced, and a method for optimizing polishing conditions can be found. However, no example of performing such a method conveniently has been found.

The present invention has been made in view of such problems, and an object of the present invention is to provide silica particles having surface irregularities suitable for polishing objects to be polished typified by silicon wafers, and silica sol containing the silica particles. , to provide a polishing composition containing the silica sol. Another object of the present invention is to provide a polishing method excellent in productivity of an object to be polished, a semiconductor wafer manufacturing method including the polishing method, and a semiconductor device manufacturing method including the polishing method. . Furthermore, another object of the present invention is to provide a method for evaluating silica particles that can easily determine the state of surface irregularities of silica particles in silica sol.

With conventional silica particles, particularly silica particles obtained by hydrolysis/condensation reaction of alkoxysilane, the state of surface unevenness cannot be determined, and the setting of polishing conditions is not necessarily sufficient. However, as a result of extensive studies, the present inventors have found that x/ By adjusting y to a suitable range, the inventors have found that the silica particles have a non-uniform state and are excellent in polishing rate, and have completed the present invention. In addition, the present inventors have found a method for easily determining the surface unevenness state of silica particles in silica sol by calculating the value of x/y, and have completed the present invention.

That is, the gist of the present invention is as follows.
[1] x/y is 1.4 to 1.8, where x is the Heywood diameter of the particles measured by a field emission scanning electron microscope, and y is the average primary particle diameter calculated from the BET specific surface area; , a silica particle having a surface silanol group density of 4/nm ² or more and a cv value of 20 to 50 as measured by the Sears method.
[2] The silica particles according to [1], wherein x is 15 nm to 100 nm.
[3] The silica particles according to [1] or [2], wherein y is 10 nm to 60 nm.
[4] The silica particles according to any one of [1] to [3], which have a metal impurity content of 5 ppm or less.
[5] The silica particles according to any one of [1] to [4], containing a tetraalkoxysilane condensate as a main component.
[6] The silica particles of [5], wherein the tetraalkoxysilane condensate contains a tetramethoxysilane condensate.
[7] A silica sol containing the silica particles according to any one of [1] to [6].
[8] The silica sol according to [7], wherein the content of silica particles is 3% by mass to 50% by mass based on 100% by mass of the total silica sol.
[9] A polishing composition comprising the silica sol according to [7] or [8].
[10] A polishing method comprising polishing with the polishing composition according to [9].
[11] A method for producing a semiconductor wafer, comprising the step of polishing with the polishing composition according to [9].
[12] A method for manufacturing a semiconductor device, comprising the step of polishing with the polishing composition according to [9] .

The silica particles of the present invention have a non-uniform surface unevenness and are excellent in polishing rate. In addition, the silica sol of the present invention contains silica particles having a non-uniform surface unevenness state, and therefore has an excellent polishing rate. Furthermore, since the polishing composition of the present invention contains silica particles having a non-uniform surface unevenness state, the polishing rate is excellent.
The polishing method of the present invention is excellent in polishing rate and in productivity of the object to be polished. Further, since the semiconductor wafer manufacturing method and the semiconductor device manufacturing method of the present invention include the polishing method of the present invention, the polishing rate is excellent and the productivity of the object to be polished is excellent.
The method for evaluating silica particles of the present invention can easily determine the state of surface unevenness of silica particles in silica sol.

1 is a diagram showing a secondary electron image of the silica particles obtained in Example 1 at a magnification of 150,000 times observed with a field emission scanning electron microscope; FIG. 2 is a diagram showing a secondary electron image of silica particles obtained in Comparative Example 1 at a magnification of 150,000 times observed with a field emission scanning electron microscope; FIG.

Although the present invention will be described in detail below, the present invention is not limited to the following embodiments, and can be implemented with various modifications within the scope of the gist thereof. In addition, when the expression "-" is used in this specification, it is used as an expression including numerical values or physical property values before and after it.

(silica particles)
In the silica particles of the present invention, x/y is 1.4 to 1.8, where x is the Heywood diameter measured by a field emission scanning electron microscope, and y is the average primary particle diameter calculated from the BET specific surface area. is.

x is the Heywood diameter measured by a field emission scanning electron microscope.
x is preferably 7 nm to 150 nm, more preferably 15 nm to 100 nm. When x is at least the lower limit, the silica sol has excellent storage stability. Moreover, when x is equal to or less than the upper limit, the surface roughness and flaws of the object to be polished typified by a silicon wafer can be reduced, and the sedimentation of silica particles in the silica sol can be suppressed.

The Heywood diameter of silica particles is measured with a field emission scanning electron microscope. Specifically, it is measured and calculated under the conditions shown below.
A silica sol containing silica particles is dropped onto a silicon substrate and dried. Using a field emission scanning electron microscope, the silicon substrate is irradiated with an electron beam at an acceleration voltage of 5 kV, and a secondary electron image observed at a magnification of 50,000 times. is photographed, the Heywood diameters of all silica particles (100 to 130) included in the same field of view are measured, and the average value is calculated. At that time, the concentration of silica particles in the silica sol is adjusted so that the total number of silica particles included in the same field of view of the secondary electron image observed at a magnification of 50,000 times is 100 to 130.
The reason why the magnification is 50,000 times is that the shape of each silica particle of 7 nm to 150 nm can be identified, and the amount of silica particles of 7 nm to 150 nm included in the same field of view can be sufficiently secured (100 to 130 pieces). be.

y is the average primary particle size calculated from the BET specific surface area.
y is preferably 5 nm to 100 nm, more preferably 10 nm to 60 nm. When y is at least the lower limit, the silica sol has excellent storage stability. Moreover, when y is equal to or less than the upper limit, surface roughness and flaws of the object to be polished, which is represented by a silicon wafer, can be reduced, and sedimentation of silica particles in the silica sol can be suppressed.

The average primary particle size of silica particles is calculated from the BET specific surface area. Specifically, the BET specific surface area of silica particles is measured using an automatic specific surface area measuring device, and the average primary particle diameter is calculated using the following formula (1), assuming that the silica particles are spherical. calculate.
Average primary particle size (nm) = 6000/(BET specific surface area (m ² /g) x density (g/cm ³ )) (1)

The average primary particle size of the silica particles can be set within a desired range using known conditions and methods.

x/y is 1.4 to 1.8, preferably 1.45 to 1.75, more preferably 1.5 to 1.7. When x/y is at least the lower limit value, the silica particles have a non-uniform surface state and are excellent in polishing rate. Moreover, it is excellent in low scratch property in x/y being below an upper limit.

x/y can be set within a desired range by controlling the surface unevenness of the silica particles in the silica sol. In order to control the surface unevenness of the silica particles in the silica sol, for example, the composition ratio of the raw material alkoxysilane and the solvent/dispersion medium, the reaction temperature, the reaction time, and the addition of water after the completion of the hydrolysis reaction/condensation reaction. What is necessary is just to optimize time.

The average secondary particle size of silica particles is preferably 10 nm to 200 nm, more preferably 20 nm to 100 nm. When the average secondary particle size of the silica particles is at least the lower limit, the removability of the silica particles in washing after polishing is excellent, and the storage stability of the silica sol is excellent. When the average secondary particle diameter of the silica particles is equal to or less than the upper limit, the surface roughness and scratches of the object to be polished typified by a silicon wafer during polishing can be reduced, and the removability of the silica particles in cleaning after polishing is excellent. Sedimentation of silica particles in silica sol can be suppressed.

The average secondary particle size of silica particles is measured by a dynamic light scattering method. Specifically, it is measured using a dynamic light scattering particle size measuring device.

The cv value of the silica particles is preferably 15-50, more preferably 20-40, even more preferably 25-35. When the cv value of the silica particles is at least the lower limit, the polishing rate for an object to be polished typified by a silicon wafer is excellent, and the productivity of silicon wafers is excellent. Further, when the cv value of the silica particles is equal to or less than the upper limit, the surface roughness and scratches of the object to be polished typified by a silicon wafer during polishing can be reduced, and the removability of the silica particles in cleaning after polishing is excellent.

The cv value of silica particles is calculated using the following formula (2) after measuring the average secondary particle size of silica particles using a dynamic light scattering particle size measuring device.
cv value = (standard deviation (nm)/average secondary particle size (nm)) x 100 (2)

The association ratio of silica particles is preferably 1.0 to 4.0, more preferably 1.1 to 3.0. When the association ratio of the silica particles is at least the lower limit value, the polishing rate for an object to be polished typified by a silicon wafer is excellent, and the productivity of silicon wafers is excellent. Further, when the association ratio of silica particles is equal to or lower than the upper limit, surface roughness and scratches on an object to be polished, typified by a silicon wafer during polishing, can be reduced, and aggregation of silica particles can be suppressed.

The association ratio of silica particles is calculated using the following formula (3) from the average primary particle size measured by the above-described measurement method and the average secondary particle size measured by the above-described measurement method. .
Association ratio = average secondary particle size/average primary particle size (3)

The surface silanol group density of the silica particles is preferably 1/nm ² to 8/nm ² , more preferably 4/nm ² to 7/nm ² . When the surface silanol group density of the silica particles is at least the lower limit, the silica particles have an appropriate surface repulsion and the silica sol has excellent dispersion stability. Moreover, when the surface silanol group density of the silica particles is equal to or less than the upper limit, the silica particles have an appropriate surface repulsion, and aggregation of the silica particles can be suppressed.

The surface silanol group density of silica particles is measured by the Sears method. Specifically, it is measured and calculated under the conditions shown below.
Silica sol corresponding to 1.5 g of silica particles is collected, and pure water is added to adjust the liquid volume to 90 mL. Add 0.1 mol / L hydrochloric acid aqueous solution until the pH reaches 3.6 in an environment of 25 ° C., add 30 g of sodium chloride, gradually add pure water to completely dissolve sodium chloride, and finally test Pure water is added until the total volume of the liquid reaches 150 mL to obtain a test liquid.
Put the obtained test solution in an automatic titrator, add dropwise 0.1 mol / L sodium hydroxide aqueous solution, pH 4.0 to 9.0 0.1 mol / L sodium hydroxide required Measure the titer A (mL) of the aqueous solution.
Using the following formula (4), the consumption V (mL) of 0.1 mol/L sodium hydroxide aqueous solution required for the pH to change from 4.0 to 9.0 per 1.5 g of silica particles was calculated. Then, the surface silanol group density ρ (number/nm ² ) of the silica particles is calculated using the following formula (5).
V=(A×f×100×1.5)/(W×C) (4)
A: Titration volume (mL) of 0.1 mol/L sodium hydroxide aqueous solution required for pH to change from 4.0 to 9.0 per 1.5 g of silica particles
f: titer of 0.1 mol / L sodium hydroxide aqueous solution used C: concentration of silica particles in silica sol (% by mass)
W: amount of silica sol collected (g)
ρ=(B×N _A )/(10 ¹⁸ ×M×S _BET ) (5)
B: Amount of sodium hydroxide (mol) required for pH to be from 4.0 to 9.0 per 1.5 g of silica particles calculated from V
N _A : Avogadro's number (number/mol)
M: amount of silica particles (1.5 g)
S _BET : Specific surface area (m ² /g) of silica particles measured when calculating average primary particle size

The method for measuring and calculating the surface silanol group density of the silica particles is described in "GW Sears, Jr., Analytical Chemistry, Vol.28, No.12, pp.1981-1983 (1956)." Shinichi Haba, Development of Abrasive for Semiconductor Integrated Circuit Process, Kochi University of Technology Doctoral Dissertation, pp.39-45, March 2004", "Patent No. 5967118", "Patent No. 6047395" .

The surface silanol group density of the silica particles can be set within a desired range by adjusting the conditions for the hydrolysis reaction/condensation reaction of the alkoxysilane. Specifically, the following method can be used.
The so-called sol-gel method, which uses alkoxysilane as the main raw material, hydrolyzes alkoxysilane in the presence of a catalyst such as an acid or a base, dehydrates and condenses the resulting silanol groups, forms siloxane bonds, and grows particles. , a method for obtaining silica particles. At that time, the silanol group disappears as the condensation reaction progresses. Depending on the settings, the silanol group density inside and on the surface of the silica particles can be adjusted.

The metal impurity content of silica particles is preferably 5 ppm or less, more preferably 2 ppm or less.

In the polishing of silicon wafers for semiconductor devices, metal impurities adhering to and contaminating the surface of the object to be polished adversely affect the characteristics of the wafer, and also diffuse into the wafer, degrading quality. The performance of the manufactured semiconductor device is significantly degraded.
In addition, when metal impurities are present in silica particles, coordinated interaction occurs between the surface silanol groups showing acidity and the metal impurities, changing the chemical properties (acidity, etc.) of the surface silanol groups, It changes the three-dimensional environment of the particle surface (easiness of aggregation of silica particles, etc.) and affects the polishing rate.

The metal impurity content of silica particles is measured by high frequency inductively coupled plasma mass spectrometry (ICP-MS). Specifically, silica sol containing 0.4 g of silica particles is accurately weighed, sulfuric acid and hydrofluoric acid are added, heated, dissolved and evaporated, and pure water is added to the remaining sulfuric acid droplets so that the total amount is exactly 10 g. Prepare a test solution by using a high-frequency inductively coupled plasma mass spectrometer. The target metals are sodium, potassium, iron, aluminum, calcium, magnesium, zinc, cobalt, chromium, copper, manganese, lead, titanium, silver, and nickel, and the total content of these metals is the metal impurity content. do.

The content of metal impurities in silica particles can be reduced to 5 ppm or less by obtaining silica particles by performing hydrolysis reaction/condensation reaction using alkoxysilane as a main raw material.
In the method of deionizing alkali silicate such as water glass, it is extremely difficult to reduce the metal impurity content of silica particles to 5 ppm or less because sodium and the like derived from raw materials remain.

Examples of the shape of silica particles include spherical, chain, cocoon-like (also referred to as knob-like and peanut-like), and irregular shapes (eg, wart-like, curved, branched, etc.). Among these silica particles, when it is desired to reduce the surface roughness and scratches of an object to be polished such as a silicon wafer during polishing, a spherical shape is preferable. If you want to raise it more, the irregular shape is preferable.

Since the silica particles of the present invention are excellent in mechanical strength and storage stability, it is preferable that they do not have pores.
The presence or absence of pores in the silica particles is confirmed by BET multipoint method analysis using an adsorption isotherm using nitrogen as an adsorption gas.

Since the silica particles of the present invention are excellent in mechanical strength and storage stability, it preferably contains an alkoxysilane condensate as a main component, and more preferably contains a tetraalkoxysilane condensate as a main component. The main component means 50% by mass or more in 100% by mass of all components constituting the silica particles.
In order to obtain silica particles containing an alkoxysilane condensate as a main component, it is preferable to use alkoxysilane as a main raw material. In order to obtain silica particles containing a tetraalkoxysilane condensate as a main component, it is preferable to use tetraalkoxysilane as a main raw material. The main raw material means 50% by mass or more in 100% by mass of all the raw materials constituting the silica particles.

(Method for producing silica particles)
Methods for producing silica particles include, for example, a method by thermal decomposition of silicon tetrachloride, a method by deionization of alkali silicate such as water glass, and a method by hydrolysis/condensation reaction of alkoxysilane. Among these methods for producing silica particles, the method by hydrolysis reaction/condensation reaction of alkoxysilane is preferable because the content of metal impurities can be reduced and the shape of silica particles can be easily controlled. A method using hydrolysis reaction/condensation reaction of tetraalkoxysilane is more preferable.

Examples of tetraalkoxysilanes include tetramethoxysilane, tetraethoxysilane, tetrapropoxysilane, tetraisopropoxysilane, and the like. These tetraalkoxysilanes may be used alone or in combination of two or more. Among these tetraalkoxysilanes, tetramethoxysilane and tetraethoxysilane are preferred because they undergo rapid hydrolysis, do not easily leave unreacted substances, are excellent in productivity, and can easily yield a stable silica sol. Methoxysilane is more preferred.

As the raw material constituting the silica particles, a raw material other than tetraalkoxysilane such as a low condensate of tetraalkoxysilane may be used. It is preferable that the alkoxysilane is 50% by mass or more and the raw materials other than tetraalkoxysilane are 50% by mass or less, and the tetraalkoxysilane is 90% by mass or more and the raw materials other than tetraalkoxysilane are 10% by mass or less. is more preferred.

Examples of the solvent/dispersion medium used in the hydrolysis reaction/condensation reaction include water, methanol, ethanol, propanol, isopropanol, and ethylene glycol. One of these solvents and dispersion media may be used alone, or two or more thereof may be used in combination. Among these solvents/dispersion media, water and alcohol are preferred, and water and methanol are more preferred, since the one used in the hydrolysis reaction/condensation reaction and the by-product are the same and are excellent in terms of convenience in production. .

The hydrolysis/condensation reaction may be carried out in the presence of a catalyst or in the absence of a catalyst, but the presence of a catalyst is preferred because the hydrolysis/condensation reaction can be promoted.
Examples of catalysts include acid catalysts such as hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, acetic acid, formic acid, and citric acid, and alkalis such as ethylenediamine, diethylenetriamine, triethylenetetraamine, ammonia, urea, ethanolamine, and tetramethylammonium hydroxide. A catalyst etc. are mentioned. Among these catalysts, alkali catalysts are preferable because they have excellent catalytic action and are easy to control the particle shape, they can suppress the contamination of metal impurities, and they are highly volatile and excellent in removability after the condensation reaction. , ammonia is more preferred.

In order to increase the degree of condensation of the silica particles, it is preferable to carry out pressurized heat treatment after the hydrolysis reaction/condensation reaction of the alkoxysilane is completed.

The pressure of the pressurized heat treatment is preferably 0.10 MPa to 2.3 MPa, more preferably 0.14 MPa to 1.0 MPa. When the pressure of the pressurized heat treatment is 0.10 MPa or more, the degree of condensation of the silica particles can be increased. In addition, when the pressure of the pressurized heat treatment is 2.3 MPa or less, silica particles can be produced without significantly changing the average primary particle size, average secondary particle size, cv value, and association ratio, and silica sol excellent dispersion stability.

The temperature of the pressurized heat treatment is preferably 100°C to 220°C, more preferably 110°C to 180°C. When the temperature of the pressurized heat treatment is 100° C. or higher, it is excellent in increasing the degree of condensation of the silica particles. When the temperature of the pressurized heat treatment is 220° C. or less, silica particles can be produced without significantly changing the average primary particle size, average secondary particle size, cv value, and association ratio, and the dispersion stability of the silica sol is achieved. Excellent in nature.

The time for the pressurized heat treatment is preferably 0.25 hours to 6 hours, more preferably 0.5 hours to 4 hours. When the time of the pressurized heat treatment is 0.25 hours or more, it is excellent in increasing the degree of condensation of the silica particles. When the time of pressure heating treatment is 6 hours or less, silica particles can be produced without significantly changing the average primary particle size, average secondary particle size, cv value, and association ratio, and the silica sol dispersion is stable. Excellent in nature.

The pressurized heat treatment may be performed in the air or in a solvent/dispersion medium. The d value can be precisely controlled without greatly changing the particle size, the average secondary particle size, the cv value, and the association ratio.

The pressurized heat treatment may be performed immediately after the hydrolysis reaction/condensation reaction is completed, and unnecessary components are removed from the components in the reaction solution after the hydrolysis reaction/condensation reaction, and the necessary components are added. Although it may be performed later, since the operation pressure can be kept low, it should be performed after removing unnecessary components from among the components in the reaction solution after the hydrolysis reaction/condensation reaction and adding the necessary components. and more preferably after removing the organic compounds and adding water.

The pH at which the pressure and heat treatment is performed in the aqueous dispersion is preferably 6.0 to 8.0, more preferably 6.5 to 7.8. Gelation of the silica sol can be suppressed when the pH is 6.0 or more when performing the pressurized heat treatment in the aqueous dispersion. Further, when the pH is 8.0 or less when the pressure and heat treatment is performed in the aqueous dispersion, the average primary particle size, the average secondary particle size, the cv value, and the d value without significantly changing the association ratio can be precisely controlled, aggregation of silica particles can be suppressed, and the dispersion stability of silica sol is excellent.

(silica sol)
The silica sol of the present invention preferably contains the silica particles of the present invention and a solvent/dispersion medium.

Solvents and dispersion media for silica sol include, for example, water, methanol, ethanol, propanol, isopropanol, ethylene glycol and the like. One of these silica sol solvents and dispersion media may be used alone, or two or more thereof may be used in combination. Among these solvents/dispersion media for silica sol, water and alcohol are preferable, and water is more preferable, since they have excellent affinity with silica particles.

The content of silica particles in the silica sol is preferably 3% by mass to 50% by mass, more preferably 4% by mass to 40% by mass, and even more preferably 5% by mass to 30% by mass, based on 100% by mass of the total silica sol. When the content of silica particles in the silica sol is 3% by mass or more, the polishing rate for an object to be polished typified by a silicon wafer is excellent. Further, when the content of silica particles in the silica sol is 50% by mass or less, aggregation of the silica particles in the silica sol or polishing composition can be suppressed, and the storage stability of the silica sol or polishing composition is excellent.

The content of the solvent/dispersion medium in the silica sol is preferably 50% by mass to 97% by mass, more preferably 60% by mass to 96% by mass, and even more preferably 70% by mass to 95% by mass, based on the total amount of 100% by mass of the silica sol. . When the content of the solvent/dispersion medium in the silica sol is 50% by mass or more, aggregation of silica particles in the silica sol or polishing composition can be suppressed, and the storage stability of the silica sol or polishing composition is excellent. Moreover, when the content of the solvent/dispersion medium in the silica sol is 97% by mass or less, the polishing rate for an object to be polished represented by a silicon wafer is excellent.

The content of silica particles and solvent/dispersion medium in the silica sol can be adjusted by removing unnecessary components and adding necessary components from among the components in the reaction solution after the hydrolysis reaction/condensation reaction is completed. can be set in the range of

The silica sol of the present invention contains, in addition to silica particles and a solvent/dispersion medium, an oxidizing agent, an antiseptic, an antifungal agent, a pH adjuster, a pH buffer, and a surfactant, as long as the performance is not impaired. , chelating agents, antibacterial and biocidal agents, and the like.
In particular, since the silica sol has excellent storage stability, it is preferable to include an antibacterial/biocide in the silica sol.

Examples of antibacterial/biocide agents include hydrogen peroxide, ammonia, quaternary ammonium hydroxide, quaternary ammonium salts, ethylenediamine, glutaraldehyde, hydrogen peroxide, methyl p-hydroxybenzoate, and sodium chlorite. etc. One of these antibacterial/biocide agents may be used alone, or two or more thereof may be used in combination. Among these antibacterial/biocide agents, hydrogen peroxide is preferable because of its excellent affinity with silica sol.
Biocides also include those commonly referred to as fungicides.

The content of the antibacterial/biocide in the silica sol is preferably 0.0001% by mass to 10% by mass, more preferably 0.001% by mass to 1% by mass, based on 100% by mass of the total silica sol. When the content of the antibacterial/biocide in the silica sol is 0.0001% by mass or more, the silica sol has excellent storage stability. If the content of the antibacterial/biocide in the silica sol is 10% by mass or less, the original performance of the silica sol is not impaired.

The pH of the silica sol is preferably 6.0-8.0, more preferably 6.5-7.8. When the pH of the silica sol is 6.0 or more, the long-term storage stability of the silica sol is excellent. Moreover, when the pH of the silica sol is 8.0 or less, aggregation of silica particles can be suppressed, and the dispersion stability of the silica sol is excellent.
The pH of the silica sol can be set within a desired range by adding a pH adjuster.

(Method for producing silica sol)
For the silica sol of the present invention, the reaction solution after the hydrolysis reaction/condensation reaction may be used as it is. components may be added for production.

In the production of silica sol, a filtration step may be included in order to remove coarse particles and avoid aggregation due to fine particles.
Filtration methods include, for example, natural filtration under normal pressure, reduced pressure filtration, pressure filtration, centrifugal filtration and the like.
Filtration may be performed at any time and any number of times, but is preferably performed immediately before preparation of the polishing composition because the polishing composition has excellent storage stability and polishing properties.

(Polishing composition)
The polishing composition of the invention preferably contains the silica sol of the invention and a water-soluble polymer.

A water-soluble polymer enhances the wettability of the polishing composition to an object to be polished, typified by a silicon wafer. The water-soluble polymer is preferably a polymer having a functional group with high water affinity, and the affinity between the functional group with high water affinity and the surface silanol group of the silica particles is high, and the polishing composition contains The silica particles and the water-soluble polymer are stably dispersed in closer proximity. Therefore, the effects of the silica particles and the water-soluble polymer work synergistically when polishing an object to be polished, typified by a silicon wafer.

Examples of water-soluble polymers include cellulose derivatives, polyvinyl alcohol, polyvinylpyrrolidone, copolymers having a polyvinylpyrrolidone skeleton, and polymers having a polyoxyalkylene structure.

Examples of cellulose derivatives include hydroxyethylcellulose, hydrolyzed hydroxyethylcellulose, hydroxypropylcellulose, hydroxyethylmethylcellulose, hydroxypropylmethylcellulose, methylcellulose, ethylcellulose, ethylhydroxyethylcellulose, carboxymethylcellulose and the like.
Examples of copolymers having a polyvinylpyrrolidone skeleton include graft copolymers of polyvinyl alcohol and polyvinylpyrrolidone.
Examples of polymers having a polyoxyalkylene structure include polyoxyethylene, polyoxypropylene, copolymers of ethylene oxide and propylene oxide, and the like.

These water-soluble polymers may be used singly or in combination of two or more. Among these water-soluble polymers, cellulose derivatives are preferred because they have a high affinity with the surface silanol groups of silica particles and act synergistically to impart good hydrophilicity to the surface of the object to be polished, and hydroxyethyl cellulose. is more preferred.

The weight average molecular weight of the water-soluble polymer is preferably 1,000 to 3,000,000, more preferably 5,000 to 2,000,000, even more preferably 10,000 to 1,000,000. When the weight average molecular weight of the water-soluble polymer is 1,000 or more, the hydrophilicity of the polishing composition is improved. Further, when the weight average molecular weight of the water-soluble polymer is 3,000,000 or less, the affinity with silica sol is excellent, and the polishing rate for an object to be polished such as a silicon wafer is excellent.

The mass-average molecular weight of the water-soluble polymer is measured by size exclusion chromatography in terms of polyethylene oxide under the condition that a 0.1 mol/L NaCl solution is used as a mobile phase.

The content of the water-soluble polymer in the polishing composition is preferably 0.02% by mass to 10% by mass, more preferably 0.05% by mass to 5% by mass, based on 100% by mass of the total amount of the polishing composition. When the content of the water-soluble polymer in the polishing composition is 0.02% by mass or more, the hydrophilicity of the polishing composition is improved. Further, when the content of the water-soluble polymer in the polishing composition is 10% by mass or less, aggregation of silica particles during preparation of the polishing composition can be suppressed.

In addition to the silica sol and the water-soluble polymer, the polishing composition of the present invention may optionally contain a basic compound, a polishing accelerator, a surfactant, a hydrophilic compound, a preservative, and an antiseptic within a range that does not impair its performance. Other ingredients such as fungicides, pH adjusters, pH buffers, surfactants, chelating agents, antibacterials and biocides may also be included.
In particular, chemical polishing (chemical etching) can be performed by giving a chemical action to the surface of an object to be polished, typified by a silicon wafer, and the synergistic effect with the surface silanol groups of silica particles makes it possible to It is preferable to include a basic compound in the polishing composition because it can improve the polishing rate of the polishing body.

Basic compounds include, for example, organic basic compounds, alkali metal hydroxides, alkali metal hydrogencarbonates, alkali metal carbonates, and ammonia. These basic compounds may be used individually by 1 type, and may use 2 or more types together. Among these basic compounds, ammonia, tetramethylammonium hydroxide, tetraethylammonium hydroxide, ammonium hydrogencarbonate, and ammonium carbonate are preferred because they are highly water-soluble and have excellent affinity with silica particles and water-soluble polymers. , ammonia, tetramethylammonium hydroxide, and tetraethylammonium hydroxide are more preferred, and ammonia is even more preferred.

The content of the basic compound in the polishing composition is preferably 0.001% by mass to 5% by mass, more preferably 0.01% by mass to 3% by mass, based on 100% by mass of the total amount of the polishing composition. When the content of the basic compound in the polishing composition is 0.001% by mass or more, the polishing rate of an object to be polished typified by a silicon wafer can be improved. Moreover, when the content of the basic compound in the polishing composition is 5% by mass or less, the stability of the polishing composition is excellent.

The pH of the polishing composition is preferably 8.0 to 12.0, more preferably 9.0 to 11.0. When the pH of the polishing composition is 8.0 or more, aggregation of silica particles in the polishing composition can be suppressed, and the dispersion stability of the polishing composition is excellent. Moreover, when the pH of the polishing composition is 12.0 or less, dissolution of silica particles can be suppressed, and the stability of the polishing composition is excellent.
The pH of the polishing composition can be set within a desired range by adding a pH adjuster.

The polishing composition of the present invention is obtained by mixing the silica sol of the present invention, a water-soluble polymer, and, if necessary, other components. , may be diluted with water or the like immediately before polishing.

(Application)
The silica particles of the present invention, the silica sol of the present invention, and the polishing composition of the present invention can be suitably used for polishing purposes. For example, polishing semiconductor materials such as silicon wafers, polishing electronic materials such as hard disk substrates, and integrating It can be used for polishing (chemical-mechanical polishing) in the planarization process when manufacturing circuits, polishing synthetic quartz glass substrates used for photomasks and liquid crystals, and polishing magnetic disk substrates. It can be used particularly preferably for chemical mechanical polishing.

(polishing method)
The polishing method of the present invention is preferably a method of polishing using the polishing composition of the present invention.
A specific polishing method includes, for example, a method of pressing the surface of a silicon wafer against a polishing pad, dropping the polishing composition of the present invention onto the polishing pad, and polishing the surface of the silicon wafer.

(Method for manufacturing semiconductor wafer)
The method for producing a semiconductor wafer of the present invention is a method including the step of polishing using the polishing composition of the present invention, and the specific polishing method is as described above.
Examples of semiconductor wafers include silicon wafers and compound semiconductor wafers.

(Method for manufacturing semiconductor device)
The semiconductor device manufacturing method of the present invention is a method including the step of polishing using the polishing composition of the present invention, and the specific polishing method is as described above.

(Method for evaluating silica particles)
In the evaluation method of the silica particles of the present invention, x is the Heywood diameter of the particles measured by a field emission scanning electron microscope, and y is the average primary particle diameter calculated from the BET specific surface area. It is a method of calculating and determining the surface unevenness state of silica particles.

The Heywood diameter of silica particles is measured with a field emission scanning electron microscope. Specifically, it is as described above.
The average primary particle size of silica particles is calculated from the BET specific surface area. Specifically, it is as described above.

Originally, x/y should be around 1. However, in reality, since y reflects the surface unevenness of the silica particles, the BET specific surface area increases when the silica particles have many surface unevenness, and y is derived as a value smaller than the actual particle diameter x. Therefore, x/y is derived to be greater than 1, and the magnitude of the value indicates the degree of unevenness of the surface. From this phenomenon, it is possible to quantitatively determine the state of surface unevenness of the silica particles in the silica sol, depending on the magnitude of x/y.

The present invention will be described in more detail below using examples, but the present invention is not limited to the description of the examples below unless it departs from the gist of the invention.

(Measurement of average primary particle size)
The silica sol obtained in Examples and Comparative Examples is freeze-dried, and the BET specific surface area of the silica particles is measured using an automatic specific surface area measuring device (model name "Belsorp MR1", manufactured by Microtrack Bell Co., Ltd.), Assuming that the silica particles are truly spherical, the average primary particle size y was calculated using the following formula (1) with a density of 2.2 g/cm ³ .
Average primary particle size (nm) = 6000/(BET specific surface area (m ² /g) x density (g/cm ³ )) (1)

(Measurement of Heywood diameter of particles)
The silica sol obtained in Examples and Comparative Examples was diluted 5000 times with ultrapure water, and 5 μL of the diluted silica sol was dropped onto a silicon substrate and dried. Then, using a field emission scanning electron microscope (model name "S-5200 type", manufactured by Hitachi High-Technologies Corporation, FE-SEM), the silicon substrate is irradiated with an electron beam at an acceleration voltage of 5 kV, and the magnification is 50,000 times. A secondary electron image observed in was taken, and the Heywood diameters of all silica particles (100 to 130 particles) included in the same field of view were measured, and the average value was calculated as the Heywood diameter x of the particles.
The Heywood diameter of the particles was measured by importing the captured field emission scanning electron micrograph into image analysis type particle size distribution measurement software (software name: "Mac-View Ver. 4", manufactured by Mountec Co., Ltd.).
The particle shape was determined as described below. Whether or not two or more particles are bonded is determined as an individual particle that is not bonded if a black line is visible between the particles, and if a black line is not visible between the particles, one particle that is bonded was determined to be particles of

(Measurement of surface silanol group density)
An amount corresponding to 1.5 g of silica particles of the silica sol obtained in Examples and Comparative Examples was collected in a 200 mL tall beaker, and pure water was added to adjust the liquid volume to 90 mL.
In an environment of 25° C., the pH electrode was inserted into a tall beaker, and the test solution was stirred for 5 minutes with a magnetic stirrer. While stirring with a magnetic stirrer was continued, a 0.1 mol/L hydrochloric acid aqueous solution was added until the pH reached 3.6. Remove the pH electrode from the tall beaker, add 30 g of sodium chloride while continuing to stir with a magnetic stirrer, and gradually add pure water to completely dissolve the sodium chloride until the total volume of the test solution reaches 150 mL. Pure water was added to the temperature, and the test solution was stirred for 5 minutes with a magnetic stirrer to obtain a test solution.

The tall beaker containing the obtained test solution is set in an automatic titrator "COM-1600" (manufactured by Hiranuma Sangyo Co., Ltd.), the pH electrode and burette attached to the device are inserted into the tall beaker, and the test is performed with a magnetic stirrer. While stirring the liquid, 0.1 mol / L sodium hydroxide aqueous solution is added dropwise through a burette, and the titration amount of 0.1 mol / L sodium hydroxide aqueous solution required to change the pH from 4.0 to 9.0 A (mL) was measured.
Using the following formula (4), the consumption V (mL) of 0.1 mol/L sodium hydroxide aqueous solution required for the pH to change from 4.0 to 9.0 per 1.5 g of silica particles was calculated. Then, the surface silanol group density ρ (number/nm ² ) of the silica particles was calculated using the following formula (5).
V=(A×f×100×1.5)/(W×C) (4)
A: Titration volume (mL) of 0.1 mol/L sodium hydroxide aqueous solution required for pH to change from 4.0 to 9.0 per 1.5 g of silica particles
f: titer of 0.1 mol / L sodium hydroxide aqueous solution used C: concentration of silica particles in silica sol (% by mass)
W: amount of silica sol collected (g)
ρ=(B×N _A )/(10 ¹⁸ ×M×S _BET ) (5)
B: Amount of sodium hydroxide (mol) required for pH to be from 4.0 to 9.0 per 1.5 g of silica particles calculated from V
N _A : Avogadro's number (number/mol)
M: amount of silica particles (1.5 g)
S _BET : Specific surface area (m ² /g) of silica particles measured when calculating average primary particle size

(Measurement of metal impurity content)
Silica sol containing 0.4 g of silica particles obtained in Example 1 was accurately weighed, sulfuric acid and hydrofluoric acid were added, heated, dissolved and evaporated, and pure water was added so that the total amount of the remaining sulfuric acid droplets was exactly 10 g. was added to prepare a test solution, and the metal impurity content was measured using a high-frequency inductively coupled plasma mass spectrometer "ELEMENT 2" (model name, manufactured by Thermo Fisher Scientific).
The metal impurity content in the silica particles is 1.1 ppm for sodium, 0.140 ppm for potassium, 0.015 ppm for iron, 0.135 ppm for aluminum, 0.075 ppm for calcium, 0.07 ppm for zinc, magnesium, cobalt, All of chromium, copper, manganese, lead, titanium, silver and nickel were less than 0.005 ppm.

[Example 1]
Tetramethoxysilane and methanol were mixed at a volume ratio of 2.3:1 to prepare a raw material solution. A reaction solvent prepared by mixing methanol, pure water, and ammonia in advance was charged in a reaction tank equipped with a thermometer, a stirrer, a supply pipe, and a distillation line. The concentration of water in the reaction solvent was 15% by mass, and the concentration of ammonia in the reaction solvent was 1% by mass.
While maintaining the temperature of the reaction solvent at 37° C., the ratio of the reaction solvent and the raw material solution was adjusted to 1.1:1 (volume ratio), and the raw material solution was added dropwise to the reaction tank at a uniform rate for 225 minutes to obtain silica sol. The resulting silica sol is adjusted by adding pure water to adjust the liquid volume so that the content of silica particles is about 20% by mass, and the temperature is raised to remove methanol and ammonia, and the content of silica particles is reduced. A silica sol of about 20% by weight was obtained.
Table 1 and FIG. 1 show the evaluation results of the obtained silica particles.

[Comparative Example 1]
A commercially available silica sol (trade name “PL-3”, manufactured by Fuso Chemical Industry Co., Ltd.) was used as it was.
Evaluation results of the obtained silica particles are shown in Table 1 and FIG.

FIG. 1 is a view showing a secondary electron image of silica particles obtained in Example 1 at a magnification of 150,000 times observed with a field emission scanning electron microscope. FIG. 2 is a view showing a secondary electron image of the silica particles obtained in Comparative Example 1 at a magnification of 150,000 times observed with a field emission scanning electron microscope.

Although the secondary electron images observed with the field emission scanning electron microscope shown in FIGS. 1 and 2 were observed at high magnification and high resolution, it was not possible to clearly confirm the state of surface unevenness. From this, it can be seen that it is generally difficult to visually confirm the surface irregularities of silica particles.
From Table 1, there was not much difference in x between Example 1 and Comparative Example 1 (the error between the two was about 1%). On the other hand, y strongly reflected the unevenness of the surface, and there was a large difference between Example 1 and Comparative Example 1 (the error between the two was about 10%). Since x/y of Example 1 is about 10% larger than x/y of Comparative Example 1, the silica particles obtained in Example 1 have substantially the same particle size as the silica particles obtained in Comparative Example 1. However, it can be seen that the surface is uneven.
From these, the silica particles obtained in Example 1 had a non-uniform surface unevenness state compared to commercially available silica particles, so it is expected that the polishing rate will be excellent, and the x / y value From this, it was possible to easily determine the state of surface unevenness of the silica particles.

The silica particles of the present invention, the silica sol of the present invention, and the polishing composition of the present invention can be suitably used for polishing purposes. For example, polishing semiconductor materials such as silicon wafers, polishing electronic materials such as hard disk substrates, and integrating It can be used for polishing (chemical-mechanical polishing) in the planarization process when manufacturing circuits, polishing synthetic quartz glass substrates used for photomasks and liquid crystals, and polishing magnetic disk substrates. It can be used particularly preferably for chemical mechanical polishing.

Claims (12)

When the Heywood diameter of the particles measured by a field emission scanning electron microscope is x, and the average primary particle diameter calculated from the BET specific surface area is y, x/y is 1.4 to 1.8, and the Sears method is used. Silica particles having a surface silanol group density of 4/nm ² or more and a cv value of 20 to 50 , as measured by Silica particles according to claim 1, wherein x is between 15 nm and 100 nm. Silica particles according to claim 1 or 2, wherein y is between 10 nm and 60 nm. The silica particles according to any one of claims 1 to 3, which have a metal impurity content of 5 ppm or less. The silica particles according to any one of claims 1 to 4, comprising a tetraalkoxysilane condensate as a main component. 6. Silica particles according to claim 5, wherein the tetraalkoxysilane condensate comprises a tetramethoxysilane condensate. A silica sol comprising the silica particles according to any one of claims 1 to 6. The silica sol according to claim 7, wherein the content of silica particles is 3% by mass to 50% by mass in 100% by mass of the total silica sol. A polishing composition comprising the silica sol according to claim 7 or 8. A polishing method comprising polishing with the polishing composition according to claim 9 . A method for producing a semiconductor wafer, comprising the step of polishing with the polishing composition according to claim 9. A method for manufacturing a semiconductor device, comprising the step of polishing using the polishing composition according to claim 9 .

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