TWI737804B - Measurement and monitoring methods of abnormal CVD deposition process - Google Patents

Measurement and monitoring methods of abnormal CVD deposition process Download PDF

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TWI737804B
TWI737804B TW106130076A TW106130076A TWI737804B TW I737804 B TWI737804 B TW I737804B TW 106130076 A TW106130076 A TW 106130076A TW 106130076 A TW106130076 A TW 106130076A TW I737804 B TWI737804 B TW I737804B
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李亞玲
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Abstract

本發明一種CVD沉膜偏移製程異常之量測與監控方法,其係於玻璃基板經CVD製程機台進行沉膜後,自CVD製程機台之進出口退出的過程中,由感應器感應觸發號,控制拍攝單元以單色燈源照射配合拍攝鏡頭拍攝該完成沉膜之玻璃基板的圖像,快速擷取玻璃基板上CVD沉膜與玻璃基板邊緣的視覺量測計算,並記錄至儲存單元,由斷判單元的軟體比對沉膜偏移距離,自動進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制。The present invention is a method for measuring and monitoring abnormalities of CVD deposition process. It is triggered by a sensor during the process of exiting from the entrance and exit of the CVD process machine after the glass substrate is deposited by the CVD process machine. Control the shooting unit to use the monochromatic light source to illuminate the image of the finished glass substrate with the shooting lens, quickly capture the visual measurement calculation of the CVD deposition film on the glass substrate and the edge of the glass substrate, and record it to the storage unit , The software of the judgment unit compares the offset distance of the deposited film, and automatically measures and monitors the offset of the CVD deposited film to meet the real-time and quantitative monitoring mechanism.

Description

CVD沉膜偏移製程異常之量測與監控方法Measurement and monitoring methods of abnormal CVD deposition process

本發明係有關於一種量測與監控方法,尤指一種CVD沉膜偏移製程異常之量測與監控方法。The present invention relates to a measurement and monitoring method, in particular to a measurement and monitoring method of abnormal CVD deposition process.

現況TFT(Thin Film Transistor,薄膜電晶體) CVD(Chemical Vapor Deposition,化學氣相沉積)製程皆是使用PECVD(Plasma Enhanced Chemical Vapor Deposition,電漿增強化學氣相沉積),CVD為高溫製程,且有大量化學氣體流入,玻璃基板亦會因為高溫形變,易使得玻璃基板位置位移造成破片,遮蔽框(Shadow Frame)可固定玻璃基板,避免位移發生破片。The current TFT (Thin Film Transistor) CVD (Chemical Vapor Deposition) process uses PECVD (Plasma Enhanced Chemical Vapor Deposition). CVD is a high-temperature process and has A large amount of chemical gas flows in, and the glass substrate will be deformed due to high temperature, which will easily cause the position of the glass substrate to move and cause fragments. The shadow frame can fix the glass substrate to prevent the displacement from causing fragments.

是以TFT CVD沉膜製程需要藉由遮蔽框覆蓋玻璃,再進行通電沉膜動作,然而一旦機台真空內自動控制裝置定位(Robot Alignment)偏移,使得遮蔽框覆蓋玻璃不完全,便會造成玻璃在真空室(Chamber)內破片或製程中產生Mura(亮度不均勻造成各種痕跡)問題發生,目前產線做法是由人員以定時抽驗與目視方法進行監控,凸顯現況機台製程欠缺即時沉膜偏移監控機制,作為預防機台故障前或產品異常發生後的預測及監控方法,如此不僅浪費人力,無法達到即時監控,並且監控的效果不佳。Therefore, the TFT CVD deposition process requires a mask frame to cover the glass, and then conduct the electrification of the film deposition. However, once the robot Alignment in the vacuum of the machine is shifted, the mask frame covers the glass incompletely, which will cause The problem of glass fragmentation in the vacuum chamber (Chamber) or Mura (various traces caused by uneven brightness) occurs during the process. The current production line method is to be monitored by personnel through regular sampling and visual inspection, which highlights the lack of instant film deposition in the machine process The offset monitoring mechanism is used as a method of prediction and monitoring to prevent machine failures or after product abnormalities. This not only wastes manpower, cannot achieve real-time monitoring, and the monitoring effect is not good.

本發明人有鑑於習知CVD沉膜偏移製程異常,是由人員以定時抽驗與目視方法進行監控,具有上述缺點,是以乃思及創作的意念,經多方探討與試作樣品試驗,及多次修正改良後,終推出本發明。In view of the abnormality of the conventional CVD deposition film migration process, the inventors are monitored by personnel using timed sampling and visual inspection methods. It has the above-mentioned shortcomings. Therefore, it is based on the idea of thinking and creation. After this revision and improvement, the present invention was finally launched.

本發明提供一種CVD沉膜偏移製程異常之量測與監控方法,其係將一量測與監控系統架設在一CVD製程機台外側,該CVD製程機台正面設有一出入口,該量測與監控系統包含:一拍攝單元、一儲存單元及一判定單元,該拍攝單元具有二單色燈源、至少一感應器及二拍攝鏡頭,該二單色燈源係朝下設置於該CVD製程機台之出入口上方兩側,該感應器係設置於該CVD製程機台之出入口周邊,該二拍攝鏡頭係朝上設置於該CVD製程機台之出入口下方兩側,該CVD沉膜偏移製程異常之量測與監控方法包含以下步驟:(1)玻璃基板由CVD製程機台之進出口放入進行通電沉膜製程,當玻璃基板經CVD製程機台進行沉膜後,由CVD製程機台之進出口退出時,由拍攝單元之感應器感應觸發信號;(2)於完成沉膜之玻璃基板退出CVD製程機台之進出口的過程中,控制拍攝單元之二單色燈源照射配合二拍攝鏡頭拍攝該完成沉膜之玻璃基板的圖像,快速擷取玻璃基板上CVD沉膜與玻璃基板邊緣的視覺量測計算;(3)擷取記錄玻璃基板帳料資訊與沉膜偏移量測數據至儲存單元;(4)由斷判單元的軟體比對上述量測數據,一旦沉膜偏移距離超出標準,即判定為不良品,交由產線人員進行後續處理,如沉膜偏移距離未超出標準,即判定為良品,輸送至下一流程進行後續作業。The present invention provides a method for measuring and monitoring abnormalities in a CVD deposition process. A measurement and monitoring system is set up on the outside of a CVD process machine. The front of the CVD process machine is provided with an entrance and exit. The measurement and The monitoring system includes: a photographing unit, a storage unit, and a judging unit. The photographing unit has two monochromatic light sources, at least one sensor, and two photographing lenses. The two monochromatic light sources are set downward on the CVD process machine On both sides above the entrance and exit of the stage, the sensors are arranged around the entrance and exit of the CVD process machine, and the two shooting lenses are arranged upwards on both sides below the entrance and the entrance of the CVD process machine. The CVD deposition process is abnormal. The measurement and monitoring method includes the following steps: (1) The glass substrate is inserted into the entrance and exit of the CVD process machine for the power-on film deposition process. After the glass substrate is deposited by the CVD process machine, the CVD process machine When the entrance and exit exit, the sensor of the shooting unit senses the trigger signal; (2) During the process of exiting the entrance and exit of the CVD process machine from the glass substrate that has been deposited, control the second monochromatic light source of the shooting unit to match the second shooting The lens captures the image of the glass substrate with the deposited film, and quickly captures the visual measurement calculation of the CVD deposited film on the glass substrate and the edge of the glass substrate; (3) Captures and records the accounting information of the glass substrate and the offset measurement of the deposited film The data is sent to the storage unit; (4) The software of the judgment unit compares the above-mentioned measurement data. Once the offset distance of the sinking film exceeds the standard, it is judged as a defective product and is handed over to the production line personnel for subsequent processing, such as sinking film offset If the distance does not exceed the standard, it is judged to be a good product and transported to the next process for follow-up operations.

本發明CVD沉膜偏移製程異常之量測與監控方法之主要目的,在於其每一片玻璃基板經CVD製程機台進行沉膜後,由CVD製程機台之進出口退出時,都可自動進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制,達到節省人力及全面性監控。The main purpose of the method for measuring and monitoring the abnormality of the CVD deposition process of the present invention is that after each piece of glass substrate is deposited by the CVD process machine, it can be automatically carried out when it is withdrawn from the entrance and exit of the CVD process machine. The offset measurement and monitoring of CVD deposition film meets the real-time and quantitative monitoring mechanism, saving manpower and comprehensive monitoring.

請參閱第一圖、第二圖、第三圖及第四圖,本發明CVD沉膜偏移製程異常之量測與監控方法,其係將一量測與監控系統10架設在一CVD製程機台20外側,該CVD製程機台20正面設有一出入口21,該CVD製程機台20作業時,係利用機械手臂夾取玻璃基板30由出入口21放入CVD製程機台20內,進行通電沉膜動作,完成沉膜後再由機械手臂夾取玻璃基板30由出入口21抽出CVD製程機台20,該量測與監控系統10包含:一拍攝單元11、一儲存單元12及一判定單元13,該拍攝單元11具有二單色燈源111、二感應器112及二拍攝鏡頭113,該二單色燈源111係朝下設置於該CVD製程機台20之出入口21上方兩側,該單色燈源111係採用紅、綠、藍(三原色光)其中一色,該感應器112係設置於該CVD製程機台20之出入口21周邊,該二拍攝鏡頭113係朝上設置於該CVD製程機台20之出入口21下方兩側,該二拍攝鏡頭113為光電耦合元件(CCD)。Please refer to the first figure, the second figure, the third figure and the fourth figure. The method for measuring and monitoring abnormalities in the CVD deposition process of the present invention is to set up a measurement and monitoring system 10 on a CVD process machine Outside of the stage 20, the front of the CVD process machine 20 is provided with an entrance 21. When the CVD process machine 20 is in operation, the glass substrate 30 is clamped by a robot arm and placed into the CVD process machine 20 through the entrance 21, and the film is deposited by electricity. After the film deposition is completed, the glass substrate 30 is clamped by the robotic arm and the CVD process machine 20 is drawn out from the entrance 21. The measurement and monitoring system 10 includes: a photographing unit 11, a storage unit 12, and a determination unit 13. The photographing unit 11 has two monochromatic light sources 111, two sensors 112, and two photographing lenses 113. The two monochromatic light sources 111 are arranged downward on both sides above the entrance 21 of the CVD process machine 20. The monochromatic lamp The source 111 uses one of red, green, and blue (three primary colors). The sensor 112 is arranged around the entrance 21 of the CVD process machine 20, and the two shooting lenses 113 are arranged on the CVD process machine 20 facing upwards. On the two sides below the entrance 21, the two shooting lenses 113 are photoelectric coupling elements (CCD).

本發明CVD沉膜偏移製程異常之量測與監控方法包含以下步驟:The method for measuring and monitoring abnormalities in the CVD deposition process of the present invention includes the following steps:

(1)觸發信號步驟100,玻璃基板30由CVD製程機台20之進出口21放入進行通電沉膜製程,當玻璃基板30經CVD製程機台20進行沉膜後,由CVD製程機台20之進出口21退出時,由拍攝單元11之感應器感應112感應觸發信號。(1) Trigger signal step 100. The glass substrate 30 is inserted into the entrance and exit 21 of the CVD process machine 20 for the power-on film deposition process. After the glass substrate 30 is deposited by the CVD process machine 20, the CVD process machine 20 When the entrance and exit 21 exit, the sensor 112 of the photographing unit 11 senses the trigger signal.

(2)擷取圖像步驟200,於完成沉膜之玻璃基板30退出CVD製程機台20之進出口21的過程中,控制拍攝單元11之二單色燈源111照射配合二拍攝鏡頭113拍攝該完成沉膜之玻璃基板30四角落的圖像,快速擷取玻璃基板30上CVD沉膜與玻璃基板30邊緣的視覺量測計算。(2) Image capture step 200, during the process of exiting the entrance and exit 21 of the CVD process machine 20 of the glass substrate 30 that has been deposited, control the shooting unit 11 of the second monochromatic light source 111 to illuminate and the second shooting lens 113 to shoot This completes the image of the four corners of the glass substrate 30 that has been deposited, and quickly captures the CVD deposited film on the glass substrate 30 and the visual measurement calculation of the edge of the glass substrate 30.

(3)記錄步驟300,將擷取的玻璃基板30帳料資訊與沉膜偏移量測數據記錄至儲存單元12。(3) In the recording step 300, the captured account information of the glass substrate 30 and the offset measurement data of the deposited film are recorded to the storage unit 12.

(4)比對步驟400,由斷判單元13的軟體比對上述量測數據,一旦沉膜偏移距離超出標準,即判定為不良品(NG),交由產線人員進行後續處理,如沉膜偏移距離未超出標準,即判定為良品(OK),輸送至下一流程進行後續作業。(4) In the comparison step 400, the software of the judging unit 13 compares the above-mentioned measurement data. Once the offset distance of the deposited film exceeds the standard, it is judged as a defective product (NG) and is handed over to the production line personnel for subsequent processing, such as If the offset distance of the sinking film does not exceed the standard, it is judged as good (OK) and transported to the next process for follow-up operations.

由上述具體實施例之結構,可得到下述之效益:From the structure of the above specific embodiment, the following benefits can be obtained:

本發明CVD沉膜偏移製程異常之量測與監控方法,其係於每一片玻璃基板30經CVD製程機台20進行沉膜後,由CVD製程機台20之進出口21退出時,利用拍攝圖像方式自動化方式進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制,達到節省人力及全面性監控的效果,大幅提升產品良率。The method for measuring and monitoring the abnormality of the CVD deposition process of the present invention is that after each piece of glass substrate 30 is deposited by the CVD process machine 20, when it exits from the entrance and exit 21 of the CVD process machine 20, it uses shooting The image method is used for automatic measurement and monitoring of CVD deposition film offset, which meets the real-time and quantitative monitoring mechanism, achieves the effect of saving manpower and comprehensive monitoring, and greatly improves the product yield.

10‧‧‧量測與監控系統11‧‧‧拍攝單元111‧‧‧單色燈源112‧‧‧感應器113‧‧‧拍攝鏡頭12‧‧‧儲存單元13‧‧‧判定單元20‧‧‧CVD製程機台21‧‧‧出入口30‧‧‧玻璃基板100‧‧‧觸發信號步驟200‧‧‧擷取圖像步驟300‧‧‧記錄步驟400‧‧‧比對步驟10‧‧‧Measurement and monitoring system 11‧‧‧Shooting unit 111‧‧‧Monochrome light source 112‧‧‧Sensor 113‧‧‧Shooting lens 12‧‧‧Storage unit 13‧‧‧Judging unit 20‧‧ ‧CVD process machine 21‧‧‧Entrance 30‧‧‧Glass substrate 100‧‧‧Trigger signal step 200‧‧‧Image capture step 300‧‧‧Recording step 400‧‧‧Comparison step

第一圖係本發明的結構示意圖。 第二圖係本發明拍攝單元設置於CVD製程機台上之立體圖。 第三圖係本發明拍攝單元之拍攝動作示意圖。 第四圖係本發明之流程方塊圖。The first figure is a schematic diagram of the structure of the present invention. The second figure is a three-dimensional view of the photographing unit of the present invention installed on a CVD process machine. The third figure is a schematic diagram of the shooting action of the shooting unit of the present invention. The fourth diagram is a flow block diagram of the present invention.

111‧‧‧單色燈源 111‧‧‧Monochrome light source

112‧‧‧感應器 112‧‧‧Sensor

113‧‧‧拍攝鏡頭 113‧‧‧Shooting lens

20‧‧‧CVD製程機台 20‧‧‧CVD process machine

21‧‧‧出入口 21‧‧‧Entrance and exit

Claims (4)

一種CVD沉膜偏移製程異常之量測與監控方法,其係將一量測與監控系統架設在一CVD製程機台外側,該CVD製程機台正面設有一出入口,該量測與監控系統包含:一拍攝單元、一儲存單元及一判定單元,該拍攝單元具有二燈源、至少一感應器及二拍攝鏡頭,該二燈源係朝下設置於該CVD製程機台之出入口上方兩側,該感應器係設置於該CVD製程機台之出入口周邊,該二拍攝鏡頭係朝上設置於該CVD製程機台之出入口下方兩側,該CVD沉膜偏移製程異常之量測與監控方法包含以下步驟: (1)玻璃基板由CVD製程機台之進出口放入進行通電沉膜製程,當玻璃基板經CVD製程機台進行沉膜後,由CVD製程機台之進出口退出時,由拍攝單元之感應器感應觸發信號; (2)於完成沉膜之玻璃基板退出CVD製程機台之進出口的過程中,控制拍攝單元之二燈源照射配合二拍攝鏡頭拍攝該完成沉膜之玻璃基板的圖像,快速擷取玻璃基板上CVD沉膜與玻璃基板邊緣的視覺量測計算; (3)擷取記錄玻璃基板帳料資訊與沉膜偏移量測數據至儲存單元; (4)由斷判單元的軟體比對上述量測數據,一旦沉膜偏移距離超出標準,即判定為不良品,交由產線人員進行後續處理,如沉膜偏移距離未超出標準,即判定為良品,輸送至下一流程進行後續作業。A method for measuring and monitoring abnormalities in the CVD deposition process. The measurement and monitoring system is set up on the outside of a CVD process machine. The front of the CVD process machine is provided with an entrance and exit. The measurement and monitoring system includes : A photographing unit, a storage unit and a judging unit. The photographing unit has two light sources, at least one sensor and two photographing lenses. The two light sources are arranged downward on both sides of the entrance and exit of the CVD process machine. The sensor is arranged around the entrance and exit of the CVD process machine, and the two shooting lenses are arranged upwards on both sides of the entrance and the entrance of the CVD process machine. The method for measuring and monitoring abnormalities of the CVD deposition film offset process includes The following steps: (1) The glass substrate is put into the entrance and exit of the CVD process machine for the power-on film deposition process. When the glass substrate is deposited by the CVD process machine, it is taken out of the entrance and exit of the CVD process machine. The sensor of the unit senses the trigger signal; (2) During the process of exiting the entrance and exit of the CVD process machine from the glass substrate that has been deposited, control the second light source of the shooting unit to irradiate the second camera lens to photograph the deposited glass substrate Quickly capture the CVD deposition film on the glass substrate and the visual measurement calculation of the edge of the glass substrate; (3) Capture and record the account information of the glass substrate and the deposition offset measurement data to the storage unit; (4) The software of the judgment unit compares the above-mentioned measurement data. Once the offset distance of the sinking film exceeds the standard, it is judged as a defective product and is handed over to the production line staff for subsequent processing. If the sinking film offset distance does not exceed the standard, it is judged as a good product. , Transport to the next process for follow-up operations. 如申請專利範圍第1項所述之CVD沉膜偏移製程異常之量測與監控方法,其中該燈源為單色燈源,該單色燈源係採用紅、綠、藍(三原色光)其中一色。The method for measuring and monitoring abnormalities in the CVD deposition process as described in the first item of the patent application, wherein the light source is a monochromatic light source, and the monochromatic light source adopts red, green, and blue (three primary colors) One of them. 如申請專利範圍第1項所述之CVD沉膜偏移製程異常之量測與監控方法,其中該拍攝鏡頭為光電耦合元件(CCD)。The method for measuring and monitoring abnormalities of the CVD deposition film offset process described in the first item of the scope of patent application, wherein the shooting lens is a photoelectric coupling device (CCD). 如申請專利範圍第1項所述之CVD沉膜偏移製程異常之量測與監控方法,其中該步驟(2)係拍攝該完成沉膜之玻璃基板四角落的圖像。The method for measuring and monitoring abnormalities in the CVD deposition process deviation described in the first item of the scope of patent application, wherein the step (2) is to take images of the four corners of the glass substrate on which the deposition is completed.
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Publication number Priority date Publication date Assignee Title
TW201527870A (en) * 2013-12-22 2015-07-16 Applied Materials Inc Monitoring system for deposition and method of operation thereof
CN106065465A (en) * 2015-02-25 2016-11-02 三星显示有限公司 For measuring the equipment of sedimentation rate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201527870A (en) * 2013-12-22 2015-07-16 Applied Materials Inc Monitoring system for deposition and method of operation thereof
CN106065465A (en) * 2015-02-25 2016-11-02 三星显示有限公司 For measuring the equipment of sedimentation rate

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