TWI737804B - Measurement and monitoring methods of abnormal CVD deposition process - Google Patents
Measurement and monitoring methods of abnormal CVD deposition process Download PDFInfo
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Abstract
本發明一種CVD沉膜偏移製程異常之量測與監控方法,其係於玻璃基板經CVD製程機台進行沉膜後,自CVD製程機台之進出口退出的過程中,由感應器感應觸發號,控制拍攝單元以單色燈源照射配合拍攝鏡頭拍攝該完成沉膜之玻璃基板的圖像,快速擷取玻璃基板上CVD沉膜與玻璃基板邊緣的視覺量測計算,並記錄至儲存單元,由斷判單元的軟體比對沉膜偏移距離,自動進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制。The present invention is a method for measuring and monitoring abnormalities of CVD deposition process. It is triggered by a sensor during the process of exiting from the entrance and exit of the CVD process machine after the glass substrate is deposited by the CVD process machine. Control the shooting unit to use the monochromatic light source to illuminate the image of the finished glass substrate with the shooting lens, quickly capture the visual measurement calculation of the CVD deposition film on the glass substrate and the edge of the glass substrate, and record it to the storage unit , The software of the judgment unit compares the offset distance of the deposited film, and automatically measures and monitors the offset of the CVD deposited film to meet the real-time and quantitative monitoring mechanism.
Description
本發明係有關於一種量測與監控方法,尤指一種CVD沉膜偏移製程異常之量測與監控方法。The present invention relates to a measurement and monitoring method, in particular to a measurement and monitoring method of abnormal CVD deposition process.
現況TFT(Thin Film Transistor,薄膜電晶體) CVD(Chemical Vapor Deposition,化學氣相沉積)製程皆是使用PECVD(Plasma Enhanced Chemical Vapor Deposition,電漿增強化學氣相沉積),CVD為高溫製程,且有大量化學氣體流入,玻璃基板亦會因為高溫形變,易使得玻璃基板位置位移造成破片,遮蔽框(Shadow Frame)可固定玻璃基板,避免位移發生破片。The current TFT (Thin Film Transistor) CVD (Chemical Vapor Deposition) process uses PECVD (Plasma Enhanced Chemical Vapor Deposition). CVD is a high-temperature process and has A large amount of chemical gas flows in, and the glass substrate will be deformed due to high temperature, which will easily cause the position of the glass substrate to move and cause fragments. The shadow frame can fix the glass substrate to prevent the displacement from causing fragments.
是以TFT CVD沉膜製程需要藉由遮蔽框覆蓋玻璃,再進行通電沉膜動作,然而一旦機台真空內自動控制裝置定位(Robot Alignment)偏移,使得遮蔽框覆蓋玻璃不完全,便會造成玻璃在真空室(Chamber)內破片或製程中產生Mura(亮度不均勻造成各種痕跡)問題發生,目前產線做法是由人員以定時抽驗與目視方法進行監控,凸顯現況機台製程欠缺即時沉膜偏移監控機制,作為預防機台故障前或產品異常發生後的預測及監控方法,如此不僅浪費人力,無法達到即時監控,並且監控的效果不佳。Therefore, the TFT CVD deposition process requires a mask frame to cover the glass, and then conduct the electrification of the film deposition. However, once the robot Alignment in the vacuum of the machine is shifted, the mask frame covers the glass incompletely, which will cause The problem of glass fragmentation in the vacuum chamber (Chamber) or Mura (various traces caused by uneven brightness) occurs during the process. The current production line method is to be monitored by personnel through regular sampling and visual inspection, which highlights the lack of instant film deposition in the machine process The offset monitoring mechanism is used as a method of prediction and monitoring to prevent machine failures or after product abnormalities. This not only wastes manpower, cannot achieve real-time monitoring, and the monitoring effect is not good.
本發明人有鑑於習知CVD沉膜偏移製程異常,是由人員以定時抽驗與目視方法進行監控,具有上述缺點,是以乃思及創作的意念,經多方探討與試作樣品試驗,及多次修正改良後,終推出本發明。In view of the abnormality of the conventional CVD deposition film migration process, the inventors are monitored by personnel using timed sampling and visual inspection methods. It has the above-mentioned shortcomings. Therefore, it is based on the idea of thinking and creation. After this revision and improvement, the present invention was finally launched.
本發明提供一種CVD沉膜偏移製程異常之量測與監控方法,其係將一量測與監控系統架設在一CVD製程機台外側,該CVD製程機台正面設有一出入口,該量測與監控系統包含:一拍攝單元、一儲存單元及一判定單元,該拍攝單元具有二單色燈源、至少一感應器及二拍攝鏡頭,該二單色燈源係朝下設置於該CVD製程機台之出入口上方兩側,該感應器係設置於該CVD製程機台之出入口周邊,該二拍攝鏡頭係朝上設置於該CVD製程機台之出入口下方兩側,該CVD沉膜偏移製程異常之量測與監控方法包含以下步驟:(1)玻璃基板由CVD製程機台之進出口放入進行通電沉膜製程,當玻璃基板經CVD製程機台進行沉膜後,由CVD製程機台之進出口退出時,由拍攝單元之感應器感應觸發信號;(2)於完成沉膜之玻璃基板退出CVD製程機台之進出口的過程中,控制拍攝單元之二單色燈源照射配合二拍攝鏡頭拍攝該完成沉膜之玻璃基板的圖像,快速擷取玻璃基板上CVD沉膜與玻璃基板邊緣的視覺量測計算;(3)擷取記錄玻璃基板帳料資訊與沉膜偏移量測數據至儲存單元;(4)由斷判單元的軟體比對上述量測數據,一旦沉膜偏移距離超出標準,即判定為不良品,交由產線人員進行後續處理,如沉膜偏移距離未超出標準,即判定為良品,輸送至下一流程進行後續作業。The present invention provides a method for measuring and monitoring abnormalities in a CVD deposition process. A measurement and monitoring system is set up on the outside of a CVD process machine. The front of the CVD process machine is provided with an entrance and exit. The measurement and The monitoring system includes: a photographing unit, a storage unit, and a judging unit. The photographing unit has two monochromatic light sources, at least one sensor, and two photographing lenses. The two monochromatic light sources are set downward on the CVD process machine On both sides above the entrance and exit of the stage, the sensors are arranged around the entrance and exit of the CVD process machine, and the two shooting lenses are arranged upwards on both sides below the entrance and the entrance of the CVD process machine. The CVD deposition process is abnormal. The measurement and monitoring method includes the following steps: (1) The glass substrate is inserted into the entrance and exit of the CVD process machine for the power-on film deposition process. After the glass substrate is deposited by the CVD process machine, the CVD process machine When the entrance and exit exit, the sensor of the shooting unit senses the trigger signal; (2) During the process of exiting the entrance and exit of the CVD process machine from the glass substrate that has been deposited, control the second monochromatic light source of the shooting unit to match the second shooting The lens captures the image of the glass substrate with the deposited film, and quickly captures the visual measurement calculation of the CVD deposited film on the glass substrate and the edge of the glass substrate; (3) Captures and records the accounting information of the glass substrate and the offset measurement of the deposited film The data is sent to the storage unit; (4) The software of the judgment unit compares the above-mentioned measurement data. Once the offset distance of the sinking film exceeds the standard, it is judged as a defective product and is handed over to the production line personnel for subsequent processing, such as sinking film offset If the distance does not exceed the standard, it is judged to be a good product and transported to the next process for follow-up operations.
本發明CVD沉膜偏移製程異常之量測與監控方法之主要目的,在於其每一片玻璃基板經CVD製程機台進行沉膜後,由CVD製程機台之進出口退出時,都可自動進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制,達到節省人力及全面性監控。The main purpose of the method for measuring and monitoring the abnormality of the CVD deposition process of the present invention is that after each piece of glass substrate is deposited by the CVD process machine, it can be automatically carried out when it is withdrawn from the entrance and exit of the CVD process machine. The offset measurement and monitoring of CVD deposition film meets the real-time and quantitative monitoring mechanism, saving manpower and comprehensive monitoring.
請參閱第一圖、第二圖、第三圖及第四圖,本發明CVD沉膜偏移製程異常之量測與監控方法,其係將一量測與監控系統10架設在一CVD製程機台20外側,該CVD製程機台20正面設有一出入口21,該CVD製程機台20作業時,係利用機械手臂夾取玻璃基板30由出入口21放入CVD製程機台20內,進行通電沉膜動作,完成沉膜後再由機械手臂夾取玻璃基板30由出入口21抽出CVD製程機台20,該量測與監控系統10包含:一拍攝單元11、一儲存單元12及一判定單元13,該拍攝單元11具有二單色燈源111、二感應器112及二拍攝鏡頭113,該二單色燈源111係朝下設置於該CVD製程機台20之出入口21上方兩側,該單色燈源111係採用紅、綠、藍(三原色光)其中一色,該感應器112係設置於該CVD製程機台20之出入口21周邊,該二拍攝鏡頭113係朝上設置於該CVD製程機台20之出入口21下方兩側,該二拍攝鏡頭113為光電耦合元件(CCD)。Please refer to the first figure, the second figure, the third figure and the fourth figure. The method for measuring and monitoring abnormalities in the CVD deposition process of the present invention is to set up a measurement and
本發明CVD沉膜偏移製程異常之量測與監控方法包含以下步驟:The method for measuring and monitoring abnormalities in the CVD deposition process of the present invention includes the following steps:
(1)觸發信號步驟100,玻璃基板30由CVD製程機台20之進出口21放入進行通電沉膜製程,當玻璃基板30經CVD製程機台20進行沉膜後,由CVD製程機台20之進出口21退出時,由拍攝單元11之感應器感應112感應觸發信號。(1)
(2)擷取圖像步驟200,於完成沉膜之玻璃基板30退出CVD製程機台20之進出口21的過程中,控制拍攝單元11之二單色燈源111照射配合二拍攝鏡頭113拍攝該完成沉膜之玻璃基板30四角落的圖像,快速擷取玻璃基板30上CVD沉膜與玻璃基板30邊緣的視覺量測計算。(2) Image capture
(3)記錄步驟300,將擷取的玻璃基板30帳料資訊與沉膜偏移量測數據記錄至儲存單元12。(3) In the
(4)比對步驟400,由斷判單元13的軟體比對上述量測數據,一旦沉膜偏移距離超出標準,即判定為不良品(NG),交由產線人員進行後續處理,如沉膜偏移距離未超出標準,即判定為良品(OK),輸送至下一流程進行後續作業。(4) In the
由上述具體實施例之結構,可得到下述之效益:From the structure of the above specific embodiment, the following benefits can be obtained:
本發明CVD沉膜偏移製程異常之量測與監控方法,其係於每一片玻璃基板30經CVD製程機台20進行沉膜後,由CVD製程機台20之進出口21退出時,利用拍攝圖像方式自動化方式進行CVD沉膜偏移量測與監控,滿足即時並量化的監控機制,達到節省人力及全面性監控的效果,大幅提升產品良率。The method for measuring and monitoring the abnormality of the CVD deposition process of the present invention is that after each piece of
10‧‧‧量測與監控系統11‧‧‧拍攝單元111‧‧‧單色燈源112‧‧‧感應器113‧‧‧拍攝鏡頭12‧‧‧儲存單元13‧‧‧判定單元20‧‧‧CVD製程機台21‧‧‧出入口30‧‧‧玻璃基板100‧‧‧觸發信號步驟200‧‧‧擷取圖像步驟300‧‧‧記錄步驟400‧‧‧比對步驟10‧‧‧Measurement and
第一圖係本發明的結構示意圖。 第二圖係本發明拍攝單元設置於CVD製程機台上之立體圖。 第三圖係本發明拍攝單元之拍攝動作示意圖。 第四圖係本發明之流程方塊圖。The first figure is a schematic diagram of the structure of the present invention. The second figure is a three-dimensional view of the photographing unit of the present invention installed on a CVD process machine. The third figure is a schematic diagram of the shooting action of the shooting unit of the present invention. The fourth diagram is a flow block diagram of the present invention.
111‧‧‧單色燈源 111‧‧‧Monochrome light source
112‧‧‧感應器 112‧‧‧Sensor
113‧‧‧拍攝鏡頭 113‧‧‧Shooting lens
20‧‧‧CVD製程機台 20‧‧‧CVD process machine
21‧‧‧出入口 21‧‧‧Entrance and exit
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TW201527870A (en) * | 2013-12-22 | 2015-07-16 | Applied Materials Inc | Monitoring system for deposition and method of operation thereof |
CN106065465A (en) * | 2015-02-25 | 2016-11-02 | 三星显示有限公司 | For measuring the equipment of sedimentation rate |
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TW201527870A (en) * | 2013-12-22 | 2015-07-16 | Applied Materials Inc | Monitoring system for deposition and method of operation thereof |
CN106065465A (en) * | 2015-02-25 | 2016-11-02 | 三星显示有限公司 | For measuring the equipment of sedimentation rate |
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