CN109473365A - The measurement and monitoring method of the heavy film offset processing procedure exception of CVD - Google Patents
The measurement and monitoring method of the heavy film offset processing procedure exception of CVD Download PDFInfo
- Publication number
- CN109473365A CN109473365A CN201710807548.0A CN201710807548A CN109473365A CN 109473365 A CN109473365 A CN 109473365A CN 201710807548 A CN201710807548 A CN 201710807548A CN 109473365 A CN109473365 A CN 109473365A
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- China
- Prior art keywords
- cvd
- heavy film
- glass substrate
- measurement
- work bench
- Prior art date
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
- H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
Abstract
The invention discloses the measurements and monitoring method of a kind of heavy film offset processing procedure exception of CVD, it is in glass substrate after CVD process work bench carries out heavy film, during exiting from the inlet and outlet of CVD process work bench, by sensor sensing trigger signal, control shooting unit irradiates the image that cooperation taking lens shoots the glass substrate of the heavy film of the completion with monochromatic lamp source, the vision measurement for capturing the heavy film of CVD on glass substrate and glass substrate edge calculates, and it records to storage element, heavy film offset distance is compared by judging unit, it is automatic to carry out the heavy film offset measurement of CVD and monitoring, meet the monitoring mechanism in real time and quantified.
Description
Technical field
The invention relates to a kind of measurement and monitoring method, espespecially a kind of CVD sink film offset processing procedure exception measurement and
Monitoring method.
Background technique
Present situation TFT (Thin Film Transistor, thin film transistor (TFT)) CVD (Chemical Vapor
Deposition, chemical vapor deposition) processing procedure is all using PECVD (Plasma Enhanced Chemical Vapor
Deposition, plasma enhanced chemical vapor deposition), CVD is high temperature process, and has a large amount of chemical gas to flow into, glass substrate
Also can be because of high temperature deformation, it is easier that position of glass substrate displacement causes fragmentation, shadow frame (Shadow Frame) can fix glass
Glass substrate avoids displacement that fragmentation occurs.
It is to sink film processing procedure with TFT CVD to need through shadow frame cover glass, then the heavy film movement that be powered, however once
Automatic control device positioning (Robot Alignment) offset in board vacuum, so that shadow frame cover glass is incomplete, it will
Glass is caused to lead to the problem of Mura (brightness irregularities cause various traces) hair in the interior fragmentation of vacuum chamber (Chamber) or processing procedure
Raw, producing line way is to be inspected by random samples to be monitored with visual means with timing by personnel at present, and it is real-time to highlight present situation board processing procedure shortcoming
Heavy film deviates monitoring mechanism, as the prediction and monitoring method before prevention board failure or after product generation extremely, so not only
Waste of manpower is unable to reach real time monitoring, and monitors ineffective.
Summary of the invention
It is abnormal in view of the heavy film offset processing procedure of prior art CVD, it is to be inspected by random samples to supervise with visual means with timing by personnel
Control has disadvantages mentioned above, and to solve disadvantages mentioned above, the present invention provides the measurement and monitoring of a kind of heavy film offset processing procedure exception of CVD
Method.
The present invention provides the measurement and monitoring method of a kind of heavy film offset processing procedure exception of CVD, by a measurement and monitoring system
System is erected on the outside of a CVD process work bench, which is equipped with an entrance, which includes with monitoring system:
One shooting unit, a storage element and a judging unit, there are two monochromatic lamp source, at least a sensors and two for shooting unit tool
A taking lens, this two monochromatic lamp sources are set to two sides above the entrance of the CVD process work bench, sensor setting downward
In the entrance periphery of the CVD process work bench, which is set to upward two below the entrance of the CVD process work bench
Side, the measurement of the heavy film offset processing procedure exception of the CVD and monitoring method comprise the steps of: (1) glass substrate by CVD process work bench
Entrance be put into the heavy film processing procedure that be powered, when glass substrate is after CVD process work bench carries out heavy film, by CVD process work bench
Entrance when exiting, by the sensor sensing trigger signal of shooting unit；(2) CVD is exited in the glass substrate for completing heavy film
During the entrance of process work bench, two monochromatic lamp source irradiations for controlling shooting unit cooperate two taking lens shootings should
The image of the glass substrate of heavy film is completed, the offset measurement number of CVD heavy film and glass substrate edge on quickly picking glass substrate
According to；(3) record glass substrate account material information and heavy film offset measurement data are captured to storage element；(4) it is compared by judging unit
Above-mentioned offset metric data, such as heavy film offset distance exceed preset value, that is, are determined as defective products, transfer to producing line personnel to carry out subsequent
Processing, such as heavy film offset distance are determined as non-defective unit without departing from preset value, are delivered to downstream and carry out subsequent job.
The measurement of the heavy film offset processing procedure exception of CVD of the present invention and the main purpose of monitoring method, are its each sheet glass
Substrate is after CVD process work bench carries out heavy film, and when being exited by the entrance of CVD process work bench, it is inclined can all to carry out the heavy film of CVD automatically
Shift measurement and monitoring meet the monitoring mechanism in real time and quantified, reach and save manpower and comprehensive monitoring.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention.
Fig. 2 is the perspective view that shooting unit of the present invention is set on CVD process work bench.
Fig. 3 is the shooting action schematic diagram of shooting unit of the present invention.
Fig. 4 is process block diagram of the invention.
Appended drawing reference
10 measurements and monitoring system
11 shooting units
111 monochromatic lamp sources
112 sensors
113 taking lens
12 storage elements
13 judging units
20 CVD process work bench
21 entrances
30 glass substrates
100 trigger signal steps
200 capture image step
300 recording steps
400 compare step
Specific embodiment
Fig. 1, Fig. 2, Fig. 3 and Fig. 4 are please referred to, the measurement and monitoring method of the heavy film offset processing procedure exception of CVD of the present invention will
One measurement is erected at 20 outside of a CVD process work bench with monitoring system 10, which is equipped with an entrance
21, when CVD 20 operation of process work bench, CVD process work bench is put by entrance 21 using mechanical arm clamping glass substrate 30
In 20, the heavy film movement that is powered is carried out, glass substrate 30 is clamped by the extraction CVD system of entrance 21 by mechanical arm again after completing heavy film
Journey board 20, the measurement include with monitoring system 10: a shooting unit 11, a storage element 12 and a judging unit 13, the bat
Taking the photograph the tool of unit 11, there are two monochromatic 111, two sensors 112 of lamp source and two taking lens 113, this two monochromatic lamp sources 111
It is set to the 21 top two sides of entrance of the CVD process work bench 20 downward, which uses red, green, blue (three primary colors
Light) it is wherein of the same colour, which is set to 21 periphery of entrance of the CVD process work bench 20, two taking lens 113
It is set to the 21 lower section two sides of entrance of the CVD process work bench 20 upward, which is photoelectric coupling assembly
(CCD)。
The measurement of the heavy film offset processing procedure exception of CVD of the present invention is comprised the steps of: with monitoring method
(1) trigger signal step 100, glass substrate 30, which is put into be powered by the entrance 21 of CVD process work bench 20, to sink
Film processing procedure, when glass substrate 30 is after CVD process work bench 20 carries out heavy film, when being exited by the entrance 21 of CVD process work bench 20,
Trigger signal is incuded by the sensor sensing 112 of shooting unit 11.
(2) image step 200 is captured, exits the entrance 21 of CVD process work bench 20 in the glass substrate 30 for completing heavy film
During, two monochromatic irradiations of lamp sources 111 for controlling shooting unit 11 cooperate two taking lens 113 to shoot the heavy film of the completion
30 4 corner of glass substrate image, capture glass substrate 30 on CVD sink film and 30 edge of glass substrate offset measurement number
According to.
(3) recording step 300 record the 30 account material information of glass substrate of acquisition and heavy film offset metric data to storage
Unit 12.
(4) step 400 is compared, above-mentioned measurement data is compared by judging unit 13, once heavy film offset distance is beyond default
Value, that is, be determined as defective products (NG), and producing line personnel is transferred to carry out subsequent processing, and such as heavy film offset distance is without departing from preset value, i.e.,
It is determined as non-defective unit (OK), is delivered to downstream and carries out subsequent job.
By the structure of above-mentioned specific embodiment, following benefits can be obtained:
The measurement and monitoring method of the heavy film offset processing procedure exception of CVD of the present invention, in each sheet glass substrate 30 through CVD system
After journey board 20 carries out heavy film, when being exited by the entrance 21 of CVD process work bench 20, in the way of shooting image mode automation
It carries out CVD and sinks film offset measurement and monitoring, meet the monitoring mechanism in real time and quantified, reach and save manpower and comprehensive monitoring
Product yield is substantially improved in effect.
Claims (4)
1. a measurement is erected at a CVD with monitoring system by the measurement and monitoring method of a kind of heavy film offset processing procedure exception of CVD
On the outside of process work bench, which is equipped with an entrance, which includes with monitoring system: a shooting unit, one
Storage element and a judging unit, shooting unit tool is there are two lamp source, at least a sensor and two taking lens, and this two
Lamp source is set to two sides above the entrance of the CVD process work bench downward, which is set to the discrepancy of the CVD process work bench
Mouth periphery, two taking lens are set to two sides below the entrance of the CVD process work bench, the heavy film offset system of the CVD upward
The measurement of Cheng Yichang is comprised the steps of: with monitoring method
(1) glass substrate is put into the heavy film processing procedure that be powered by the entrance of CVD process work bench, when glass substrate is through CVD processing procedure
After board carries out heavy film, when being exited by the entrance of CVD process work bench, by the sensor sensing trigger signal of shooting unit；
(2) during the glass substrate for completing heavy film exits the entrance of CVD process work bench, two of shooting unit are controlled
Lamp source irradiation two taking lens of cooperation shoot the image of the glass substrate of the heavy film of the completion, capture the heavy film of CVD on glass substrate
With the offset measurement data of glass substrate edge；
(3) it captures record glass substrate account material information and heavy film deviates offset measurement data to storage element；
(4) above-mentioned offset measurement data are compared by judging unit, such as heavy film offset distance exceeds preset value, that is, is determined as bad
Product transfer to producing line personnel to carry out subsequent processing, such as heavy film offset distance is determined as non-defective unit, is delivered to down without departing from preset value
One process carries out subsequent job.
2. the measurement and monitoring method of the heavy film offset processing procedure exception of CVD according to claim 1, wherein the lamp source is monochrome
Lamp source, the monochrome lamp source are wherein of the same colour using red, green, blue.
3. the heavy film of CVD according to claim 1 deviates the measurement and monitoring method of processing procedure exception, wherein the taking lens is
Photoelectric coupling assembly.
4. the heavy film of CVD according to claim 1 deviates the measurement and monitoring method of processing procedure exception, wherein the step (2) is
Shoot the image in four corner of glass substrate of the heavy film of the completion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710807548.0A CN109473365A (en) | 2017-09-08 | 2017-09-08 | The measurement and monitoring method of the heavy film offset processing procedure exception of CVD |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710807548.0A CN109473365A (en) | 2017-09-08 | 2017-09-08 | The measurement and monitoring method of the heavy film offset processing procedure exception of CVD |
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| Publication Number | Publication Date |
|---|---|
| CN109473365A true CN109473365A (en) | 2019-03-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710807548.0A Pending CN109473365A (en) | 2017-09-08 | 2017-09-08 | The measurement and monitoring method of the heavy film offset processing procedure exception of CVD |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111578851A (en) * | 2020-05-12 | 2020-08-25 | 晶澳太阳能有限公司 | Method for testing plate type PECVD microwave capability |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1441294A (en) * | 2002-02-28 | 2003-09-10 | 芝浦机械电子装置股份有限公司 | Base board plying-up device and its method and base board detector |
| CN101356631A (en) * | 2006-04-26 | 2009-01-28 | 东京毅力科创株式会社 | Film position adjusting method, memory medium and substrate processing system |
| CN106643598A (en) * | 2016-10-10 | 2017-05-10 | 上海华力微电子有限公司 | Deposition APF equipment shadow shadowring position deviation detecting and solving method |
-
2017
- 2017-09-08 CN CN201710807548.0A patent/CN109473365A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1441294A (en) * | 2002-02-28 | 2003-09-10 | 芝浦机械电子装置股份有限公司 | Base board plying-up device and its method and base board detector |
| CN101356631A (en) * | 2006-04-26 | 2009-01-28 | 东京毅力科创株式会社 | Film position adjusting method, memory medium and substrate processing system |
| CN106643598A (en) * | 2016-10-10 | 2017-05-10 | 上海华力微电子有限公司 | Deposition APF equipment shadow shadowring position deviation detecting and solving method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111578851A (en) * | 2020-05-12 | 2020-08-25 | 晶澳太阳能有限公司 | Method for testing plate type PECVD microwave capability |
| CN111578851B (en) * | 2020-05-12 | 2021-08-17 | 晶澳太阳能有限公司 | Method for testing plate type PECVD microwave capability |
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