TWI737615B - Apparatus for treating exhaust gas comprising hydrogen - Google Patents

Abstract

The invention discloses a hydrogen-containing waste gas treatment device. The hydrogen-containing waste gas treatment device according to the present invention is characterized by comprising: a treatment part, at least one side of which is connected with a hydrogen-containing waste gas inflow pipe into which the hydrogen-containing waste gas generated in the semiconductor surface modification process flows, and an oxygen-containing air inflow tube. The oxygen-containing air flows into the pipe, and the processing part includes a plurality of catalyst carrier parts containing a catalyst that catalytically reacts with the hydrogen-containing exhaust gas.

Description

Hydrogen-containing waste gas treatment device Field of invention

The invention relates to a hydrogen-containing waste gas treatment device. Specifically, it relates to a hydrogen-containing exhaust gas treatment device capable of treating hydrogen-containing exhaust gas generated in a semiconductor surface modification process through a catalytic reaction.

Background of the invention

In a surface modification process such as a diffusion oxidation process in a semiconductor manufacturing process, hydrogen, nitrogen, ammonia, etc. are used in order to form necessary thin films. Among them, hydrogen will be ignited at about 4~75%, so if it is directly discharged into the atmosphere, it may cause an explosion. Therefore, it is necessary to reduce the concentration of hydrogen in the exhaust gas.

Conventional methods for treating hydrogen-containing waste gas include a combustion method using heat, a wet method using water, and the like. Combustion method refers to a method of burning hydrogen at an ultra-high temperature above 1000°C to process hydrogen. Wet method refers to a method of injecting a large amount of water to dissolve a part of hydrogen to process hydrogen. Because the combustion method is better than wet processing The efficiency is high, so the combustion method is mainly used.

FIG. 1 is a side view showing a hydrogen-containing exhaust gas treatment device 20 using a conventional combustion method.

1, the gas discharge part 11 of the semiconductor processing device 10 is connected to the hydrogen-containing exhaust gas processing device 20, so the hydrogen-containing exhaust gas HG can flow into the cavity. Inside the cavity, the ignition part 21 that instantly generates high-temperature heat for combustion is adjacent to the gas discharge part 11. In addition, through the process gas supply pipe 25, a process gas OG such as oxygen required for combusting the hydrogen-containing exhaust gas HG can be supplied from an external process gas supply device. After the hydrogen treatment process is completed, exhaust gas including water vapor and the like may be discharged to the outside through the exhaust part 26.

The conventional hydrogen-containing exhaust gas treatment device 20 as described above has the advantage of being able to treat hydrogen with high efficiency. However, when the concentration of the hydrogen-containing exhaust gas HG changes from high to low, combustion does not occur or becomes unstable, and there is hydrogen-containing exhaust gas HG. The problem that the hydrogen in the gas is directly discharged to the outside without treatment. In addition, due to the use of combustion, there is always a danger of explosion inside the device, and it is necessary to maintain the inside of the cavity at a high temperature at all times. Therefore, there are problems that the process cost increases and it is difficult to maintain and manage the heater.

Summary of the invention

The present invention is proposed to solve the above-mentioned problems, and its purpose is to provide a hydrogen-containing waste gas treatment device that can perform a hydrogen treatment process regardless of the concentration of the hydrogen-containing waste gas.

In addition, an object of the present invention is to provide a hydrogen-containing waste gas treatment device that maximizes the hydrogen treatment efficiency of hydrogen-containing waste gas.

In addition, the object of the present invention is to provide a hydrogen-containing waste gas treatment device, which improves the durability of the device, reduces the process cost, and is used in hydrogen treatment. The process can reduce the risk factors.

In order to achieve the above object, a hydrogen-containing waste gas treatment device according to an embodiment of the present invention is characterized by comprising: a treatment part connected to at least one side of the hydrogen-containing waste gas into which the hydrogen-containing waste gas generated in the semiconductor surface modification process flows. An inflow pipe and an oxygen-containing air inflow pipe into which the oxygen-containing air flows, and the processing part includes a plurality of catalyst carrier parts, and the catalyst carrier part contains a catalyst that catalytically reacts with the hydrogen-containing exhaust gas.

According to the present invention constructed as described above, the effect is that the hydrogen treatment process is performed regardless of the concentration of the hydrogen-containing exhaust gas.

In addition, the effect of the present invention is that the hydrogen treatment efficiency of hydrogen-containing exhaust gas can be maximized.

In addition, the effect of the present invention is to improve the durability of the device, reduce process costs, and reduce risk factors in the hydrogen treatment process.

10, 100‧‧‧Semiconductor processing equipment

11‧‧‧Air Emissions Department

20, 200‧‧‧Hydrogen-containing waste gas treatment device

21‧‧‧Lighting Department

25‧‧‧Process gas supply pipe

26‧‧‧Emissions Department

110‧‧‧Hydrogen-containing waste gas inflow pipe

210‧‧‧First Processing Department

211‧‧‧Gas inflow part

212‧‧‧Introduction Department

213、213a、213b‧‧‧Mixed board

214, 214a, 214b‧‧‧mixing port

215‧‧‧Reaction Department

216, 256, 256a, 256b‧‧‧Catalyst carrier part

217, 257, 257a, 257b‧‧‧Catalytic filter

218, 258, 258a, 258b‧‧‧Catalytic reaction section

230‧‧‧Oxygenated air supply unit

231‧‧‧Oxygenated air inlet pipe

240‧‧‧First drain

250‧‧‧Second Processing Department

260‧‧‧Exhaust outlet

270‧‧‧Purge gas inlet pipe

275‧‧‧Air inflow pipe

280‧‧‧cooling unit

290‧‧‧Second drain

A‧‧‧Oxygenated air

HG, HG1, HG2, HG3‧‧‧Hydrogen-containing waste gas

OG‧‧‧Process gas

P‧‧‧Purge gas

RA‧‧‧Air

W‧‧‧Condensed water vapor, water

Fig. 1 is a side view showing a hydrogen-containing exhaust gas treatment device using a conventional combustion method.

Fig. 2 is a side view showing the overall structure of a hydrogen-containing exhaust gas treatment device according to an embodiment of the present invention.

Fig. 3 is a side view showing a first processing unit according to an embodiment of the present invention.

Fig. 4 is a plan view showing a mixing plate according to an embodiment of the present invention.

Fig. 5 is a plan view showing a reaction unit according to an embodiment of the present invention.

Detailed description

The detailed description of the present invention described later refers to the accompanying drawings showing specific embodiments capable of implementing the present invention as examples. The detailed description of these embodiments enables those skilled in the art to fully implement the present invention. It should be understood that, although the various embodiments of the present invention are different from each other, they need not be mutually exclusive. For example, the specific shapes, structures, and characteristics described herein are related to one embodiment, and can be implemented by other embodiments without departing from the spirit and scope of the present invention. In addition, it should be understood that the position or arrangement of individual structural elements in each disclosed embodiment can be changed without departing from the spirit and scope of the present invention. Therefore, the following detailed description is not intended to limit the present invention, and the protection scope of the present invention is only limited by the scope of the attached patent application and all equivalent scopes. Similar reference numerals in the drawings indicate the same or similar functions in many aspects. For convenience, the length, area, thickness, etc., and the shape thereof may be exaggeratedly shown.

In addition, the hydrogen treatment process in this specification can be understood to include all the continuous processes described below, that is, converting the hydrogen contained in the hydrogen-containing waste gas into other substances such as water vapor to reduce the hydrogen concentration.

In addition, this specification explains that in addition to semiconductor processing devices, hydrogen-containing exhaust gas treatment devices can also be used in fields such as the treatment of hydrogen generated in nuclear power generation cooling reactors, and the treatment of exhaust gas from automobile mufflers.

Hereinafter, the hydrogen-containing waste gas treatment device according to the embodiment of the present invention will be described in detail with reference to the drawings.

Figure 2 shows a hydrogen-containing waste gas treatment device according to an embodiment of the present invention A side view of the overall structure of the device 200, and FIG. 3 is a side view showing the first processing unit 210 according to an embodiment of the present invention.

Referring to FIGS. 2 and 3, the hydrogen-containing exhaust gas treatment device 200 according to this embodiment may include treatment parts 210 and 250.

The treatment parts 210 and 250 may include a plurality of catalyst carrier parts 216 and 256, and each of the catalyst carrier parts 216 and 256 includes a catalyst for catalytically reacting with the hydrogen-containing exhaust gas HG. The processing part may include a first processing part 210 located in the lower part and a second processing part 250 located in the upper part.

The first processing unit 210 can provide a space capable of efficiently processing high-concentration hydrogen in the hydrogen-containing exhaust gas HG, and the second processing unit 250 can provide a hydrogen-containing exhaust gas capable of efficiently processing a considerable part of the hydrogen in the first processing unit 210 The space of low-concentration hydrogen in HG1.

In the semiconductor processing apparatus 100, hydrogen-containing exhaust gas HG is generated due to a semiconductor surface modification process or the like, which can be discharged through a gas discharge part (reference numeral not shown) of the semiconductor processing apparatus 100. In addition, the hydrogen-containing waste gas HG can flow into the first treatment part 210 through the hydrogen-containing waste gas inflow pipe 110. One end of the hydrogen-containing waste gas inflow pipe 110 is connected to the gas discharge part, and the other end is connected to one side of the first treatment part 210. Connected.

In addition, in order to control the reactivity with the hydrogen-containing exhaust gas HG and the hydrogen concentration in the first processing unit 210, other process gases may be flowed. In the present invention, oxygen-containing air A (oxygen-containing air A) may be flowed. The oxygen-containing air A can be supplied to the inside of the first processing portion 210 from the external oxygen-containing air supply portion 230 through the oxygen-containing air inflow pipe 231 connected to the side of the first processing portion 210.

The first processing part 210 may be divided into a gas inflow part 211 and a reaction part 215. The gas inflow part 211 is located at the lower part for the inflow and mixing of the hydrogen-containing waste gas HG and the oxygen-containing air A. The reaction part 215 is located at the upper part. In addition, a plurality of catalyst carrier portions 216 are arranged. Of course, the hydrogen-containing exhaust gas inflow pipe 110 and the oxygen-containing air inflow pipe 231 should be connected to one side of the gas inflow port 211.

Fig. 4 is a plan view showing a mixing plate 213 according to an embodiment of the present invention.

2 to 4, the gas inflow part 211 may include an introduction part 212 and a plurality of mixing plates 213 (213a, 213b).

The introduction part 212 may provide an inflow space for the hydrogen-containing exhaust gas HG and the oxygen-containing air A, which flow in from the hydrogen-containing exhaust gas inflow pipe 110 and the oxygen-containing air inflow pipe 231. In the introduction part 212, the hydrogen-containing exhaust gas HG and the oxygen-containing air A can be mixed for the first time.

The plurality of mixing plates 213 (213a, 213b) may be arranged on the introduction part 212 in the horizontal direction so as to be spaced apart from each other in the vertical direction. A plurality of mixing ports 214a and 214b may be formed on the mixing plate 213 along the transverse direction and the longitudinal direction. Although two mixing plates 213 are shown as 213a and 213b, there may be more than that, and the number of mixing ports 214a and 214b can also be adjusted appropriately.

The hydrogen-containing waste gas HG and the oxygen-containing air A that have been mixed for the first time in the introduction part 212 may be better mixed for the second time during the process of passing through the mixing ports 214a and 214b of the mixing plate 213 and moving upward. In this way, the uniformly mixed gas can move to the reaction part 215.

In particular, it is necessary to extend the flow path to better mix the hydrogen-containing exhaust gas HG and the oxygen-containing air A. For this reason, it is preferable to form in each of the horizontal and vertical directions The multiple mixing ports 214a and 214b on the two mixing plates 213a and 213b are formed staggered from each other. 4(a) and 4(b) show a structure in which the mixing port 214a of the lower mixing plate 213a and the mixing port 214b of the upper mixing plate 213b are offset from each other. That is, since the mixing ports 214a and 214b are formed so as not to occupy the space on the same vertical axis, there is an advantage that the flow path can be extended.

The reaction part 215 is located at the upper part of the gas inflow part 211 or the mixing plate 213 and may include a plurality of catalyst carrier parts 216. The catalyst carrier part 216 includes a catalyst that can catalytically react with the hydrogen contained in the hydrogen-containing exhaust gas HG. The following catalytic reaction can occur, that is, the hydrogen in the hydrogen-containing exhaust gas HG and the oxygen in the oxygen-containing air A contact the catalyst of the catalyst carrier part 216 to form radicals, and the hydrogen formed as radicals react with oxygen. This produces water vapor (or water). Thus, hydrogen can be processed (removed).

The catalytic reaction is performed at approximately 500°C, and a part of the water vapor generated during the catalytic reaction can be condensed. The condensed water vapor w (or water w) may be discharged to the outside through the first drain port 240 connected to one side of the first treatment part 210.

The catalyst carrier part 216 may be a catalyst metal itself, or may be formed by coating a part of the catalyst metal. On the other hand, in view of the fact that most of the materials used as catalysts are expensive, the catalyst carrier part 216 preferably coats the surface of an inexpensive metal or ceramic with a catalytic metal. The catalytic metal coated on at least a part of the catalyst carrier portion 216 can be platinum (Pt), ruthenium (Ru), rhodium (Rh), iridium (Ir), osmium (Os), and other platinum-based metals and aluminum (Al), Chromium (Cr), copper (Cu), etc.

The present invention is characterized in that in the first processing section 210 (or reaction section 215) The catalyst carrier portion 216 is arranged along the horizontal direction.

Preferably, the first processing unit 210 is designed to have a larger horizontal area than the second processing unit 250 described later. Since the horizontal area of the first treatment part 210 is larger than that of the second treatment part 250, and the catalyst carrier part 216 is arranged in the horizontal direction in the first treatment part 210 (or the reaction part 215), the hydrogen that moves up from the gas inflow part 211 contains hydrogen. The exhaust gas HG and the oxygen-containing air A are in contact with the plurality of catalyst carrier portions 216 in a state where they are uniformly dispersed in a wide range, so that hydrogen treatment can be performed. Therefore, the high-concentration hydrogen in the hydrogen-containing exhaust gas HG can be efficiently processed in the first processing unit 210. About 95% of the hydrogen in the hydrogen-containing waste gas HG can be processed in the first processing part 210.

FIG. 5 is a plan view showing the reaction unit 215 according to an embodiment of the present invention.

Referring to FIGS. 3 and 5, the catalyst carrier part 216 can occupy almost all the space in the reaction part 215. Each catalyst carrier part 216 may include a catalytic filter part 217 and a catalytic reaction part 218.

The catalytic filter part 217 can function as a support of the catalytic reaction part 218 and at the same time provide a wide surface area that can cause the hydrogen-containing exhaust gas HG in contact with the catalyst carrier part 216 to undergo a catalytic reaction. In order to provide a wide surface area, the catalytic filter part 217 may have a shape in which a porous metal or ceramic is coated with catalytic metal. The thickness of the catalytic filter part 217 is preferably smaller than that of the catalytic reaction part 218.

The catalytic reaction part 218 is disposed on the catalytic filter part 217 and can provide a space where the catalytic reaction can occur more smoothly. The catalytic reaction part 218 may be in a state where a catalytic metal is coated on a metal or ceramic, the metal or ceramic It has a honeycomb (or regular hexagonal prism) structure with mesopores formed in the vertical direction. The hydrogen-containing exhaust gas HG and the oxygen-containing air A passing through the catalytic filter part 217 can contact the catalytic metal coated on the inner sidewall and undergo a catalytic reaction during the process of passing through the mesopores formed in the vertical direction of the honeycomb structure and moving upward. In addition, since the catalytic reaction part 218 has a honeycomb structure that provides the largest surface area, it has an advantage that the efficiency of the catalytic reaction can be maximized.

In order to make the catalytic reaction occur more smoothly, it is preferable that the diameter of the honeycomb structure does not exceed 4 mm. However, the diameter is not necessarily limited to this, and can be appropriately adjusted according to the amount, concentration, target treatment concentration, etc. of the hydrogen-containing waste gas HG to be treated. In addition, in addition to the honeycomb structure, other structures may be adopted within the scope of the purpose of increasing the contact area.

When the catalytic filter part 217 and the catalytic reaction part 218 reach the limit of use, they can be easily replaced by decomposing a part of the reaction part 215 or through an access door (not shown) for maintenance/management.

The present invention is characterized in that the second processing unit 250 can be connected to be disposed on the upper portion of the first processing unit 210. In addition, the second processing section 250 is characterized by including at least one catalyst carrier section 256 (256a, 256b) arranged in a vertical direction.

2 and 3 again, in the hydrogen-containing exhaust gas HG passing through the first processing unit 210, a considerable part of the hydrogen is processed by the catalytic reaction. After processing about 95% of the hydrogen, the hydrogen-containing waste gas HG1, which contains about 5% of the remaining hydrogen, continues to move upward, so as to enter the second processing part 250.

The second treatment part 250 processes the hydrogen-containing waste gas HG1 whose hydrogen concentration is lower than that of the first treatment part 210, so there is no need to have the same width as the first treatment part 210. Horizontal area. In other words, in the first processing section 210 for processing hydrogen-containing exhaust gas HG containing high-concentration hydrogen, it is necessary to arrange a plurality of catalyst carrier sections 216 in the horizontal direction to treat a large amount of hydrogen. In the second processing section 250 where the hydrogen-containing exhaust gas HG1 is processed, at least one catalyst carrier section 256 (256a, 256b) may be arranged along the vertical direction to centrally process a small amount of hydrogen to complete the hydrogen treatment process. Although FIG. 2 shows a case where two catalyst carrier parts 256a and 256b are arranged on the second processing part 250, one or more than three may be arranged according to the process environment.

Like the catalyst carrier section 216 of the first treatment section 210, the catalyst carrier section 256 of the second treatment section 250 may also include a catalytic filter section 257 (257a, 257b) and a catalytic reaction section 258 (258a, 258b). Since the structure and function of the catalytic filter unit 257 and the catalytic reaction unit 258 are the same as the catalytic filter unit 217 and the catalytic reaction unit 218 of the first processing unit 210, detailed descriptions are omitted.

The hydrogen-containing exhaust gas HG1 is in contact with the catalytic metal and undergoes a catalytic reaction during the upward movement through the catalyst carrier portion 256 arranged in the vertical direction of the second processing portion 250, and the hydrogen-containing exhaust gas HG2 discharged from the second processing portion 250 It may contain hydrogen in the combustion range or less (4% or less), preferably 0.1% or less.

Further referring to FIG. 2, a purge gas inflow pipe 270 may also be provided between the upper portion of the second processing part 250 and the discharge port 260. The purge gas inflow pipe 270 receives the purge gas P from an external purge gas supply part (not shown) and supplies it to the upper part of the second treatment part 250 to further dilute the content discharged from the second treatment part 250 Hydrogen waste gas HG2, at the same time can be increased towards the discharge port 260 mobile power.

A cooling unit 280 for cooling the hydrogen-containing waste gas HG2 may also be provided between the upper portion of the second processing part 250 and the discharge port 260. The cooling unit 280 can use a cooling pipe or a cold trap surrounding the piping between the upper portion of the second processing part 250 and the discharge port 260 without limitation.

The hydrogen-containing waste gas HG2 moves toward the discharge port 260, and can cause a part of the water vapor to be condensed naturally, or be condensed by the cooling unit 280. The condensed water vapor w (or water w) may be discharged to the outside through the second drain port 290 connected between the upper portion of the second processing part 250 and the discharge port 260.

An air inflow pipe 275 may also be provided between the upper portion of the second processing part 250 and the discharge port 260. Before the hydrogen-containing exhaust gas HG2 is discharged to the outside through the exhaust port 260, the air inflow pipe 275 allows air (room air) to flow in, so that the hydrogen-containing exhaust gas HG3 whose concentration is further diluted can be discharged through the exhaust port 260.

As described above, the effect of the present invention is that, since hydrogen is continuously processed in the first processing section 210 and the second processing section 250, the process is performed regardless of the concentration of the hydrogen-containing exhaust gas HG, and the catalytic reaction is used, so the process is performed in the hydrogen treatment process. Can reduce the risk factors. In addition, the effect of the present invention is that a large amount of hydrogen is processed in the first processing section 210 in which the catalyst carrier section 216 is arranged in the horizontal direction, and in the second processing section in which the catalyst carrier section 256 is arranged in the vertical direction Concentrate the treatment of hydrogen, so the efficiency of hydrogen treatment of hydrogen-containing exhaust gas can be maximized.

In addition, the effect of the present invention is that since hydrogen can be treated by a catalytic reaction without burning, the durability of the device can be improved, In addition, maintenance and management can be realized by only replacing the catalyst carrier parts 216 and 256, so the overall process cost can be reduced.

As described above, the present invention has been illustrated and described with preferred embodiments, but is not limited to the embodiments, and various modifications can be made by those skilled in the art to which the present invention belongs within the scope that does not depart from the spirit of the present invention. And change. Such modifications and alterations should be regarded as falling within the scope of the patent application of the present invention.

100‧‧‧Semiconductor processing equipment

110‧‧‧Hydrogen-containing waste gas inflow pipe

200‧‧‧Hydrogen-containing waste gas treatment device

210‧‧‧First Processing Department

211‧‧‧Gas inflow part

212‧‧‧Introduction Department

213‧‧‧Mixed board

215‧‧‧Reaction Department

216, 256, 256a, 256b‧‧‧Catalyst carrier part

217, 257a, 257b‧‧‧Catalytic filter

218, 258a, 258b‧‧‧Catalytic reaction section

230‧‧‧Oxygenated air supply unit

231‧‧‧Oxygenated air inlet pipe

240‧‧‧First drain

250‧‧‧Second Processing Department

260‧‧‧Exhaust outlet

270‧‧‧Purge gas inlet pipe

275‧‧‧Air inflow pipe

280‧‧‧cooling unit

290‧‧‧Second drain

A‧‧‧Oxygenated air

HG, HG2, HG3‧‧‧Hydrogen-containing waste gas

P‧‧‧Purge gas

RA‧‧‧Air

W‧‧‧Condensed water vapor, water

Claims (12)

A hydrogen-containing waste gas treatment device, which is characterized by comprising: a treatment part, at least one side of which is connected with a hydrogen-containing waste gas inflow pipe into which hydrogen-containing waste gas generated in a semiconductor surface modification process flows and an oxygen-containing gas into which oxygen-containing air flows. Air inflow pipe, and the treatment part includes a plurality of catalyst carrier parts, the catalyst carrier part contains a catalyst that catalytically reacts with the hydrogen-containing exhaust gas, wherein the treatment part includes: a first treatment part, including a plurality of The catalyst carrier portion arranged in a horizontal direction; and a second processing portion, which is arranged on the upper part of the first processing portion and communicates with the first processing portion, and includes at least one catalyst arranged in a vertical direction The carrier part, wherein the horizontal area of the first treatment part is larger than that of the second treatment part. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein the first treatment part is divided into an upper reaction part and a lower gas inflow part, and the catalyst carrier part is arranged in the reaction part, The hydrogen-containing exhaust gas inflow pipe and the oxygen-containing air inflow pipe are connected to one side of the gas inflow portion. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein at least a part of the catalyst carrier part is coated with platinum (Pt), At least one catalytic metal selected from aluminum (Al), chromium (Cr), copper (Cu), ruthenium (Ru), rhodium (Rh), iridium (Ir), and osmium (Os). The hydrogen-containing exhaust gas treatment device according to claim 3, wherein the catalyst carrier part includes: a catalytic filter part coated with the catalytic metal on porous metal or ceramic; and a catalytic reaction part arranged in The catalytic filter part is coated with the catalytic metal on metal or ceramic with a mesoporous honeycomb structure formed along the vertical direction. The hydrogen-containing waste gas treatment device according to claim 4, characterized in that, in the honeycomb structure, the straight hydrocarbon of a single honeycomb does not exceed 4 mm. The hydrogen-containing exhaust gas treatment device according to claim 2, wherein the gas inflow portion includes: an introduction portion into which the hydrogen-containing exhaust gas and the oxygen-containing air flow into the introduction portion; and a plurality of mixing plates, The introduction part is spaced apart from each other and arranged along the horizontal direction, wherein a plurality of mixing ports are formed along the horizontal and vertical directions on the mixing plate. The hydrogen-containing exhaust gas treatment device according to claim 6, characterized in that the mixing port of the mixing plate located in the lower part and the mixing port of the mixing plate located in the upper part are formed staggered from each other. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein a first drain is connected to at least one side of the first treatment part The port is used to discharge the condensed water vapor from the inside of the first treatment part. The hydrogen-containing waste gas treatment device according to claim 1, wherein a cooling unit is further provided between the upper portion of the second treatment part and the discharge port for cooling a part of the hydrogen-containing waste gas. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein a purge gas inflow pipe for supplying purge gas is further provided between the upper portion of the second treatment section and the discharge port. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein a second drain port for discharging condensed water vapor is connected between the upper portion of the second treatment part and the discharge port. The hydrogen-containing exhaust gas treatment device according to claim 1, wherein an air inflow pipe for supplying air is further provided between the upper portion of the second treatment part and the discharge port.

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