JP2013022564A - Gas cleaning device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a gas cleaning device effectively decomposing and removing harmful substances such as VOC (Volatile Organic Compound) by utilizing effective catalysis using an oxide semiconductor.SOLUTION: The gas cleaning device includes: a cleaning treatment part 20 for decomposing and treating a gas to be treated; and a heat exchanger 10 of the cleaned gas discharged from the cleaning treatment part 20 and the gas to be treated, which is sent into the cleaning treatment part 20. The cleaning treatment part 20 includes a catalyzer 31 in which the oxide semiconductor is carried on a base material comprising a porous body and heating parts 32 and 24 inside a treatment container 22 constituting a treatment space of the gas to be treated. An end part of the catalyzer 31 is fixed to a support 34 provided on a wall of the treatment container 22, and at the contact part of the support 34 and the catalyzer 31, the gas to be treated cannot pass through/leak.

Description

  The present invention relates to a purification device used for purification of gas containing harmful substances such as volatile organic compounds (VOC) and exhaust gas.

  The present inventor has proposed a method utilizing the catalytic activity of a heated oxide semiconductor as a method for decomposing and purifying gases such as plastic and VOC (Patent Document 1). When an oxide semiconductor such as chromium oxide or titanium oxide is heated to about 350 to 500 ° C., a large amount of holes are generated, and the object to be decomposed is cut into small molecules by the strong oxidizing power of the holes. Specifically, these small molecules react with oxygen in the air and are completely decomposed into water and carbon dioxide.

  Further, the present inventor, as a purification device using an oxide semiconductor, a catalyst part formed by supporting an oxide semiconductor on a base material having air permeability made of a honeycomb or a mesh-like porous body, and the catalyst part. The apparatus provided with the heater to heat was proposed (patent document 2). This purifier is a rectangular unit made of stainless steel or the like, a catalyst unit comprising a catalyst body and a heater formed by supporting an oxide semiconductor on a base material formed in a breathable block shape, and a heating unit This unit can be configured using only a heater unit and further a unit including only a catalyst body.

Japanese Patent No. 4517146 JP 2010-214359 A

  The method of constructing the purification device using the catalyst unit described above can be laminated by arbitrarily combining the units, independently controlling the heating temperature of the catalyst unit, the type of gas to be processed, In addition, there is an advantage that it is easy to arbitrarily construct an apparatus according to the processing amount. On the other hand, according to the flow rate, gas concentration, and usage conditions of the gas to be processed, the number of stacked catalyst units, the arrangement of the heater unit, and the catalyst-only unit are rearranged so that the catalytic action by the oxide semiconductor can be efficiently performed. There was also the complication that temperature control was performed by each unit.

  In addition, the conventional structure in which a plurality of catalyst portions are stacked has the following two main problems in addition to the above-described complexity. One is a problem that occurs in the catalyst unit. A gap is easily generated between the catalyst-supporting honeycomb (catalyst body) and the support wall that supports the catalyst-supporting honeycomb, and the target gas does not pass through the catalyst-supporting honeycomb. It was to leak through. For this reason, in order to prevent leakage, it was necessary to plug the space between the catalyst supporting honeycomb and the support wall with a sealing material. The second problem is that the packing sheet inserted to prevent gas leakage between the stacked catalyst units is subject to wear. Therefore, conventionally, when replacing the catalyst-supporting honeycomb, re-sealing and new replacement of the packing sheet have to be performed, which complicates the cost and work of the material, resulting in high costs. In particular, packing sheets that can be used under high-temperature oxygen are few and expensive.

  The present invention has been made in order to solve these problems, and provides a gas purification apparatus that can effectively decompose and remove harmful substances such as VOC by exhibiting effective catalytic action by an oxide semiconductor. The purpose is to provide.

The gas purification apparatus according to the present invention includes a purification treatment unit that decomposes and treats a gas to be treated, a purified gas discharged from the purification treatment unit, and heat of the gas to be treated that is fed into the purification treatment unit. And a catalyst body in which an oxide semiconductor is supported on a base material made of a porous material (for example, a substrate having a honeycomb structure) in a processing container constituting a processing space for a gas to be processed. A heating portion for heating the catalyst body, and an end portion of the catalyst body is fixed to a support provided on a wall of the processing vessel, and a gas to be processed passes through a contact portion between the support body and the catalyst body. It has a structure that cannot leak.
The gas purification device according to the present invention has a structure in which a purification treatment unit and a heat exchanger using exhaust heat are combined, and the purification treatment unit is not laminated with a conventional catalyst unit or a preheating unit. It is built in the system and has an integrated structure. By adopting an integrated structure, it is not necessary to stack catalyst units and preheating units using expensive packing sheets as in the past.
Note that the catalyst body and the heating part do not need to be provided as a pair, and the catalyst body and the heating part may be provided separately. Further, the arrangement number (stage number) of the catalyst body and the heating unit is not limited.

The heating unit is provided as a preheating unit for heating the gas to be processed before the gas to be processed enters the catalyst body, thereby effectively and uniformly heating the gas to be processed by the catalyst body. Decomposition can be performed efficiently. It is also possible to turn on the preheat when starting the apparatus and shorten the startup time to a predetermined temperature.
The catalyst body is supported by the support body via a support box that accommodates the catalyst body, and is supported by preventing the gas to be processed from passing and leaking at the contact portion with the support box or the support body. You can also Thereby, the gas to be treated can be reliably brought into contact with the catalyst body, and the decomposition treatment of the gas to be treated can be reliably performed.

In addition, the heat exchanger has a ventilation pipe that communicates the processing container with the outer container and allows the gas to be processed to flow in the outer container on the side of the purification processing section where the purified gas is discharged. The gas to be processed sent out from the ventilation pipe flows into the upstream side (previous stage side) of the processing container, so that the purified gas purified by the purification processing unit and the gas to be treated introduced from the outside Can be effectively heat-exchanged, and the gas to be treated in the purification treatment section can be efficiently decomposed.
In the outer container, a ventilation control plate that constitutes a bent flow path through which the purified gas passes is arranged in a plurality of stages with alternately extending directions, and the ventilation pipe is inserted into the ventilation control plate, Heat exchange between the purified gas and the gas to be processed in the heat exchanger is efficiently performed.

  According to the gas purification device of the present invention, the purification treatment unit and the heat exchanger are combined to efficiently decompose the gas to be treated by the catalyst body supporting the oxide semiconductor. it can. In addition, the end of the catalyst body is fixed to the support provided on the wall of the purification treatment section so as to block the leakage of the gas to be treated, thereby preventing the gas to be treated from leaking and reliably Can be decomposed.

It is sectional drawing which shows the whole structure of the gas purification apparatus. It is sectional drawing which shows the structure of a purification process part. FIG. 3 is a plan view taken along line C-C ′ of FIG. 2. It is sectional drawing which shows the structure which supports a catalyst body in a processing container with a support body. It is a top view of the processing container which shows the state which supported the catalyst body with the support body. It is sectional drawing which shows the other structural example of a purification process part.

(Configuration of heat exchanger)
FIG. 1 shows the overall configuration of an embodiment of a gas purification apparatus according to the present invention. The purification apparatus of the present embodiment includes a heat exchanger 10 installed on the upper part of the machine casing 5 and a purification processing unit 20 installed on the lower side of the heat exchanger 10.
The heat exchanger 10 heat-exchanges the introduced gas (cold gas) containing harmful substances such as VOC and the gas (high temperature gas) purified in the purification processing unit 20, and heats the introduced gas to purify the processing unit. The purified gas is cooled and sent out from the heat exchanger 10.

  The heat exchanger 10 includes an outer container 11, a vent pipe 12 disposed in the outer container 11 with the outer container 11 parallel to the longitudinal direction, and a ventilation control plate 13 that controls the flow of purified gas in the outer container 11. Is provided. An inlet pipe 14 for introducing the gas to be processed is connected to the upper end of the ventilation pipe 12 via a pipe connection chamber 14a, and a delivery pipe 15 for sending the gas to be processed to the purification processing unit 20 is connected to the lower end of the ventilation pipe 12. It is connected via a connecting chamber 15a. An introduction fan that introduces a gas to be treated is connected to the introduction pipe 14, and the gas to be treated is introduced into the heat exchanger 10 from the introduction pipe 14.

  In this embodiment, a flexible pipe made of stainless steel is used as the ventilation pipe 12, and eight ventilation pipes 12 are arranged in the plane of the pipe connection chambers 14a and 15a. Since the flexible tube has a corrugated outer surface, there is an advantage that the contact area with the flowing gas is large and the heat exchange property is good.

In the upper part of the outer container 11, an exhaust pipe 16 for discharging the purified gas that has moved from the lower side to the upper side in the outer container 11 is provided. A connecting pipe 17 connected to the purification processing unit 20 is provided at the lower part of the outer container 11.
The ventilation control plate 13 is provided so that the flow path of the purified gas that flows into the outer container 11 from the connection pipe 17 and is discharged from the exhaust pipe 16 becomes a bent flow path. A predetermined interval is provided at the upper part, and the side plates facing each other of the outer container 11 are provided so as to be separated in an extending direction. The purified gas flowing into the outer container 11 from the connection pipe 17 moves upward while being bent in the outer container 11 by the ventilation control plate 13 and is discharged from the exhaust pipe 16. A ventilation pipe 12 is fitted into the ventilation control plate 13, and the ventilation control plate 13 functions as a heat exchange fin that exchanges heat with the gas to be processed that passes through the ventilation pipe 12.

In the purification processing unit 20, the catalyst unit supporting the oxide semiconductor is heated to a high temperature of 350 to 500 ° C., so that the gas contacting the catalyst unit is also heated to a high temperature and flows into the heat exchanger 10. In the heat exchanger 10, the gas to be processed introduced into the heat exchanger 10 exchanges heat with the purified gas heated to a high temperature, and is sent to the purification processing unit 20 while being heated to a high temperature.
The communication pipe 18 that connects the heat exchanger 12 and the purification processing unit 20 is connected to the lower part of the purification processing unit 20, and the heated gas to be processed flows into the purification processing unit 20 from the lower part of the purification processing unit 20.

  In the purification treatment unit 20, the gas to be treated is heated in advance and brought into contact with the catalyst unit so that the catalytic action is effectively exhibited. In the present embodiment, the gas to be processed is sent to the purification processing unit 20 while being heated to a considerably high temperature by the action of the heat exchanger 10, and therefore the purification processing unit 20 efficiently and uniformly covers the target gas. The process gas is decomposed in a heated state, and is efficiently and reliably decomposed by the catalyst unit.

(Configuration of purification processing unit)
The purification processing unit 20 is provided with a preheating unit 24 for heating the gas to be processed on the lower (front) side of the processing container 22 formed in a rectangular bottomed box shape, and on the upper (rear) side of the preheating unit 24. A processing unit 30 for decomposing the processing gas is provided.

  In the preheating unit 24, a plurality of heaters 24a are arranged with a predetermined interval in the height direction (vertical direction), and a diffusion plate 25 is arranged between the heaters 24a. The diffusion plate 25 is used to move the gas to be processed flowing into the processing container 22 while diffusing it throughout the processing container 22, and is formed by forming a through-hole in a mesh shape on a metal plate. In the present embodiment, three stages of preheat heaters 24a (a pair of heaters 24a extending from the opposing wall surface of the processing container 20 correspond to one stage) are provided.

Preheater heaters 24a are arranged between a pair of opposing side plates of the processing container 22 so as to be alternately inserted into the processing container 22 for each stage. As the heater 24a, a sheath heater that is bent in a U shape when viewed from the plane is used. The connecting portion between the side plate of the processing container 22 and the heater 24a is hermetically sealed through a ceramic sealing material.
An introduction chamber 23 for introducing the gas to be processed sent from the heat exchanger 10 is provided at the bottom of the processing container 22. The gas to be processed that has flowed into the introduction chamber 23 is uniformly heated by passing through the preheating portion 24 while diffusing from the introduction chamber 23.

  Since the gas to be treated is heated when it passes through the heat exchanger 10, the number of heaters 24a arranged in the preheating unit 24 and the heating temperature can be used without much adjustment. In the case of a purification apparatus not provided with the heat exchanger 10, in order to reliably decompose the gas to be processed in the processing unit 30, the control of heating the gas to be processed to a predetermined temperature in the preheating unit 24 is very important. . Depending on the temperature of the gas to be processed and the flow rate of the gas to be processed, the heating temperature of the gas to be processed in the preheating unit 24 varies greatly. Therefore, the number and arrangement of heaters 24a arranged in the preheating unit 24 according to the use conditions, heating of the heaters The temperature etc. must be adjusted accordingly.

In addition, when the heat exchanger 10 is not attached to the processing unit 30 arranged in the processing container 22, it is necessary to adjust the number and arrangement of the processing units 30.
In contrast, when the purification apparatus is configured by attaching the heat exchanger 10 to the purification processing unit 20 as in the present embodiment, the temperature of the gas to be processed and the flow rate of the gas to be processed vary depending on the use state. Even when the heat exchanger 10 is in operation, it is sent to the purification processing unit 20 within a certain temperature range by the action of the heat exchanger 10, so that the required decomposition processing can be performed without changing the arrangement of the preheating unit 24 and the processing unit 30. . The ability to use the preheating unit 24 and the processing unit 30 without changing the structure and arrangement has the great advantage of facilitating assembly of the apparatus, improving the use efficiency of the apparatus, and facilitating maintenance.

The processing unit 30 includes a catalyst body 31 that supports an oxide semiconductor as a catalyst, and a heater 32 disposed below the catalyst body 31. The catalyst body 31 is formed by supporting an oxide semiconductor such as chromium oxide or titanium oxide on a base material formed in a block shape having air permeability.
In FIG. 2, the structure of the purification process part 20 is expanded and shown. The processing unit 30 is provided in four stages above the preheating unit 24 at predetermined intervals in the height direction. The heaters 32 disposed below the catalyst body 31 are disposed so as to be alternately inserted into the lower side of the catalyst body 31 from the opposing side plates of the processing vessel 22.

FIG. 3 is a plan view taken along the line CC ′ of FIG. The heater 32 is disposed below the catalyst body 31 so as to be bent in a U shape. The heater 32 is connected to a power source via an electrode 32a attached to the side plate 22a. The attachment portion between the heater 32 and the side plate 22a is hermetically sealed through a ceramic sealing material.
As shown in FIG. 3, the catalyst body 31 is a member having a rectangular planar shape, and is disposed at a substantially central position of the processing container 22. The temperature of the catalyst body 31 is detected by inserting a thermocouple 40 at the center of the catalyst body 31.

  FIG. 4 shows a configuration of a portion D in FIG. 2, that is, a configuration in which the catalyst body 31 is supported by the processing vessel 22. The catalyst body 31 is attached to the support body 34 formed in a rectangular frame shape surrounding the inner surface of the processing vessel 22 from below via a support box 35. The support 34 is attached to the side plates 22b and 22b of the processing container 22 by airtight welding. The side plates 22a and 22a to which the heater 32 (heater 24a) is attached are connected to the other side plates 22b and 22b and the support 34. The processing container 22 is assembled by screwing, and the processing container 22 is vertically and hermetically partitioned by the support 34.

  FIG. 5 shows a plan view of the processing container 22 in which the side plates 22a and 22b are assembled. The support 34 has a rectangular shape that is slightly smaller than the plane size of the catalyst 31 (opening port 34a), accommodates the catalyst 31 in the support box 35, and screws the support box 35 to the support 34. Fix it. As shown in FIG. 4, the catalyst body 31 is supported with the peripheral edge of the upper surface thereof in contact with the lower surface of the support 34. A flange 35 a that locks the peripheral edge of the lower surface of the catalyst body 31 is provided at the lower end edge of the support box 35, and the catalyst body 31 is pressed and supported by the flange 35 a and the support body 34.

Since the catalyst body 31 is supported with the side face completely covered by the support box 35, the gas to be treated always enters the catalyst body 31 from the opened lower surface of the catalyst body 31 and passes through the catalyst body 31. Then, the air is discharged from the vent 34a of the support 34. That is, the gas to be treated is surely discharged in contact with the catalyst body 31.
Since the thickness may vary depending on the catalyst body 31, a sealing material having heat resistance such as ceramic is interposed between the catalyst body 31 and the support 34 so as to serve as a spacer. Also good.

  Further, the flange 35a provided at the lower end edge of the support box 35 is not simply bent into a flat shape as shown in FIG. 4, but the tip of the flange 35a is further bent into an L shape, and a groove is provided in the catalyst body 31. It is also possible to configure so that the tip of the flange 35a is engaged in the groove. In this case, it is necessary to form a groove for inserting the tip of the flange 35a in the catalyst body 31, but by engaging the tip of the flange 35a into the groove of the catalyst body 31, the contact between the flange 35a and the catalyst body 31 is required. It is possible to more reliably prevent the gas to be processed from leaking out from the contact portion (the gas to be processed does not pass through the catalyst body 31 and the gas to be processed flows around the inner surface of the support box 35).

  The above-described configuration of supporting the catalyst body 31 in the processing unit 30 is effective in bringing the gas to be treated into contact with the catalyst body 31 and causing the decomposition action by the catalyst body 31 to work efficiently and reliably. In order to improve the reliability as a purification device that purifies volatile harmful substances, a configuration that prevents leakage of the gas to be treated is extremely important.

  Further, similarly to the description of the preheating unit 24 described above, since the gas to be processed is heated uniformly, the heating temperature of the processing unit 30 can be easily maintained at a uniform temperature and installed in each processing unit 30. Thus, it is possible to reliably decompose the gas to be processed without finely adjusting the heating temperature of the heater 32. In the purification apparatus not provided with the heat exchanger 10, the number of installation stages of the processing unit 30, the installation position, and the heating temperature of the heater 32 in each processing unit 30 are set so that the decomposition action in the processing unit 30 works effectively. It was necessary to make fine adjustments. On the other hand, in the purification apparatus of this embodiment, there exists an advantage that it can be used almost universally about the installation stage number and installation position of the process part 30 irrespective of use conditions.

  In the purification apparatus of the above embodiment, both the heat exchanger 10 and the purification processing unit 20 surround the outer periphery with a heat insulating material, and the heat exchanger 10 and the purification processing unit 20 are kept warm to generate heat. The replacement and purification process is made efficient.

(Another configuration example of the purification device)
FIG. 6 shows another configuration example of the purifying device according to the present invention.
In the purification device of the present embodiment, the processing unit 30 disposed above the preheating unit 24 of the purification processing unit 20 is arranged differently from the above embodiment. That is, for the processing unit 30 arranged at the top, the catalyst bodies 31a and 31b are used in two stages, and the catalyst bodies 31a and 31b are accommodated in and supported by one support box 35.

  In the above-described embodiment, the catalyst body and the heater are arranged in pairs for each processing unit 30. However, in this embodiment, the heater is omitted for the uppermost processing unit 30, and the first and second stages. The heater 32 is disposed only in the processing unit 30 of the stage. The reason why such an arrangement is possible is that the gas to be processed is heated by the action of the heat exchanger 10 and fed into the purification processing unit 20, and the gas to be processed is heated by providing the preheating unit 24, thereby processing This is because the catalyst body 31 can be heated to a required decomposition treatment temperature without providing the heater 32 in all the portions 30. In some cases, the processing unit 30 may be provided with a heater only in the preheating unit 24 without providing the heater 32, and conversely, the heaters 32 may be arranged in the individual processing units 30 without providing the preheating unit 24. It can also be set as the structure to do.

Further, the number of processing units 30 provided in the purification processing unit 20 of the purification device (four stages in the present embodiment) can be selected as appropriate.
In addition, since the amount (flow rate) of the gas to be treated and the properties of the gas to be treated differ depending on the use conditions, the number of stages of the treatment unit 30, the size of the treatment container 22, and the size of the catalyst body 31. Etc. may be set as appropriate. However, since the purification apparatus according to the present invention can efficiently heat the gas to be processed and efficiently decompose it without greatly changing the basic design depending on the use conditions, the apparatus design is easy. There is an advantage that it can be used for general purposes.

Note that the catalyst body 31 used in the processing unit 30 is obtained by supporting an oxide semiconductor on a base material having air permeability, and the base material having air permeability includes cordierite (2MgO · 2Al ₂ O ₃ -A ceramic porous body made of 5SiO ₂ ) or zeolite is used. As the structure of the porous body, those in which the ventilation portion is formed in a honeycomb shape and those in which the ventilation portion is formed in a three-dimensional network shape are used.
Various oxide semiconductors supported on the substrate can be used, such as chromium oxide (Cr ₂ O ₃ ), nickel oxide (NiO), iron oxide (Fe ₂ O ₃ ), and titanium oxide (TiO ₂ ). Preferably used. As a method for supporting an oxide semiconductor on a base material having air permeability, a spray method, an electrophoretic electrodeposition method, a dipping method, or the like can be used.

An example in which the gas purification apparatus according to the present invention is actually used will be described.
As the catalyst body used in the treatment unit 30, a catalyst body having a size of 100 × 100 × 30 mm and having a honeycomb structure or a network structure supporting chromium oxide as an oxide semiconductor was used. The number of used catalyst bodies is four.
The first and second heaters among the three heaters in the preheat section are energized. One stage of heater is 600W (a pair of 300W heaters). About the process part 30, it supplies with electricity to the heater 32 of the 1-3rd step | paragraph. The heater 32 is 300W. The combined power of the heaters 24a and 32 is 2.1 kW. This electric power does not need to be constantly input, and the reaction heat at the time of decomposition of the gas to be treated can be utilized, so that the input electric power is significantly reduced. The temperature was detected by the thermocouple of the preheating unit 24 and the thermocouple arranged in the third stage processing unit 30, and the temperature of the preheating unit 24 and the catalyst body 31 was controlled to be 500 ° C. In the purification apparatus according to the present invention, the catalyst body and the heater are fixedly installed and used. However, as in this embodiment, the number of preheat heaters is selected in accordance with the processing air volume, the heating temperature is controlled, and the catalyst body Can be easily and accurately adjusted.

When the heating temperature of the preheating unit 24 and the catalyst body 31 was 350 to 500 ° C., the temperature of the gas to be processed sent from the heat exchanger 10 to the purification processing unit 20 was 210 to 300 ° C. In the heat exchanger 10, the high temperature purified gas discharged from the purification processing unit 20 is used for heating the gas to be processed with an efficiency of about 60%.
The action of the heat exchanger in the gas purification apparatus according to the present invention is to effectively utilize the exhaust heat of the purified gas, but it does not stop there. That is, when the heat exchanger 10 is used in combination with the purification processing unit 20, the temperature becomes uniform everywhere in the purification processing unit 20, and a desired temperature distribution is obtained even with respect to fluctuations in the processing gas amount of the rated value. Is secured and can be dealt with sufficiently.

When the heat exchanger 10 is not attached to the purification processing unit 20, temperature is detected for each stage using a thermocouple arranged in the processing unit 30, and the temperature of the processing unit 30 is kept constant by controlling energization of each heater. It was kept so that. On the other hand, when the heat exchanger 10 is mounted, the temperature in the apparatus is kept uniform only by detecting the temperature in the apparatus with a single thermocouple located in the center of the purification processing unit 20. It became possible to do. It was confirmed by a thermocouple attached to each processing unit 30 that the temperature distribution in the apparatus was uniform.
As described above, when the heat exchanger 10 and the purification processing unit 20 are combined, even when the air volume of the gas to be processed fluctuates, it is possible to obtain an effect of maintaining the temperature in the purification processing unit 20 uniformly. Therefore, it becomes easy to control the temperature of the apparatus, facilitate the maintenance work of the apparatus, and efficiently purify the gas to be processed.

A purification treatment was performed on a gas to be treated containing toluene at a concentration of 200 ppm using air as a carrier gas. The rated air volume of the purification device is 5 m ³ / min. The gas to be treated introduced into the heat exchanger 10 from the introduction pipe 14 is heated in the heat exchanger 10 and sent to the lower part of the purification treatment unit 20 via the communication pipe 18. Toluene is heated by the preheating unit 24, and then passes through the processing unit 30 to be completely decomposed into carbon dioxide gas and water. The exhaust heat of the cracked gas moves up the stairs in the heat exchanger 10 and is discharged from the exhaust pipe 16 of the heat exchanger 10.
The toluene concentration was measured using a hydrocarbon meter (TVA-1000B) manufactured by Thermo Fischer Scientific Inc. at the positions of the introduction pipe 14 and the exhaust pipe 16. As a result, it became clear that toluene was decomposed at a decomposition efficiency of about 98%.

  Ten cigarettes are sent from the introduction pipe 14 to the heat exchanger 10 using air as a carrier gas under the same setting conditions as described above, and a carbon hydrogen meter is used at each position of the introduction pipe 14 and the exhaust pipe 16. Measurements were made. As a result of the measurement, it was found that the values of the hydrocarbon meters in both the introduction pipe 14 and the exhaust pipe 16 were the same and were completely purified to the air level. Further, the exhaust discharged from the exhaust pipe 16 was completely odorless. From this experiment, it was confirmed that the gas purification apparatus of this example had an effective purification action.

DESCRIPTION OF SYMBOLS 10 Heat exchanger 11 Outer container 12 Ventilation pipe 14 Introducing pipe 15 Delivery pipe 16 Exhaust pipe 18 Communication pipe 20 Purification process part 22a, 22b Side plate 24 Preheating part 24a Heater 25 Diffusion board 30 Process part 31, 31a, 31b Catalyst body 32 Heater 34 Support 34a Vent 35 Support box

Claims (5)

A purification processing unit for decomposing and processing the gas to be processed, and a heat exchanger between the purified gas discharged from the purification processing unit and the gas to be processed fed into the purification processing unit,
The purification treatment section includes a catalyst body in which an oxide semiconductor is supported on a base material made of a porous body, and a heating section in a treatment container constituting a treatment space for a gas to be treated.
A gas purification device characterized in that an end of the catalyst body is fixed to a support provided on a wall of a processing vessel, and a gas to be treated cannot pass or leak at a contact portion between the support and the catalyst body .   The gas purification apparatus according to claim 1, wherein the heating unit is provided as a preheating unit for heating the gas to be processed before the gas to be processed enters the catalyst body.   The catalyst body is supported by the support body via a support box that accommodates the catalyst body, and is supported by preventing the gas to be processed from passing and leaking at the contact portion with the support box or the support body. The gas purification apparatus according to claim 1 or 2, wherein The heat exchanger, on the side where the purified gas is discharged from the purification unit, communicates the processing container and the outer container, and arranges a ventilation pipe for flowing the gas to be processed in the outer container,
The gas purification apparatus according to any one of claims 1 to 3, wherein the gas to be processed delivered from the ventilation pipe flows into the upstream side of the processing container. In the outer container, a ventilation control plate constituting a bent flow path through which the purified gas passes is arranged in a plurality of stages with the extending directions being staggered, and the ventilation pipe is inserted into the ventilation control plate. The gas purifier according to claim 4.