TWI737571B - Method of manufacturing high specific volume positive and negative electrode films for capacitors - Google Patents

Abstract

This invention relates to a method of manufacturing high specific volume positive and negative electrode films for capacitors, which involves applying sputtering deposition to a negative aluminum foil in a vacuum chamber, forming a first negative metal layer of titanium [Ti] on the surface of the negative aluminum foil, and continuing to form a negative crystalline columnar structure of titanium [Ti] and nitrogen [N] on the surface of the negative metal layer to produce a negative film, and applying sputtering deposition to a positive aluminum foil in a vacuum chamber, forming a first positive metal layer of titanium [Ti] on the surface of the positive aluminum foil, and continuing to form a positive crystalline columnar structure of titanium [Ti], oxygen [O] and nitrogen [N] on the surface of the positive metal layer to produce a postive film. The negative film and the positive film are used in the manufacturing of capacitors, so that the negative film and the positive film become the positive and negative electrodes of the capacitors. Accordingly, the capacitors made from the negative and positive films have high specific volume, which makes the capacitors have excellent convenience in the overall use.

Description

Capacitor high specific capacitance positive and negative film manufacturing method

The present invention relates to a method for manufacturing a high-capacity positive and negative film for a capacitor, in particular to a method that uses the negative film and the positive film to have a high specific capacitance value, so that the capacitor made from the negative film and the positive film is used in its entirety. The process can have excellent convenience in use, and it has more practical functional characteristics in its overall implementation and use.

Press, capacitor [capacitor] can often be seen on various integrated circuits. This type of capacitor is a passive electronic component that stores electrical energy in an electric field. Capacitors are commonly used in electronic circuits to block direct current and allow alternating current to flow through the capacitor. ; In the analog filter circuit, the capacitor can smooth the output of the power supply; in the PC circuit, the capacitor and inductor can tune the radio to a specific frequency; in the power transmission system, the flow of voltage and power can be stabilized.

Among them, as far as the conductive terminal pins of a common capacitor are concerned, it is mainly connected with two conductive terminal pins at the bottom of the capacitor, and the two conductive terminal pins are directly flattened and bent outwards to facilitate the subsequent operation process Use; However, although the conductive terminals of the above-mentioned capacitors can achieve the expected effect of connecting with other electronic components on the circuit, it is also found in the actual operation and use that this type of conductive terminals are only made of general metal materials , Resulting in the low specific capacitance value of this type of conductive terminal foot, resulting in its inconvenience in the use process, so that there is still room for improvement in the overall structure design.

The reason is that, in view of this, the inventor upholds many years of rich experience in design, development and actual production in the related industry, researches and improves the existing shortcomings, and provides a method for manufacturing capacitors with high specific capacitance positive and negative films in order to achieve better practical value. The purpose of sex.

The main purpose of the present invention is to provide a method for manufacturing a high-capacity positive and negative film for capacitors, which mainly utilizes the high specific capacitance of the negative film and the positive It can have excellent convenience during use, and it has more practical function characteristics in its overall implementation and use.

The main purpose and effect of the manufacturing method of the high-capacity positive and negative film of the capacitor of the present invention are achieved by the following specific technical means:

The main system includes the following steps:

y，且x＞y時，x-y至多等於15%y； A. Making the negative electrode film: Sputtering the negative electrode aluminum foil in a vacuum chamber, and controlling the power density and temperature, so that the first layer of titanium [Ti] is formed on the surface of the negative electrode aluminum foil. The thickness of the negative electrode metal layer 10nm~100nm, and continue to use titanium [Ti] and nitrogen [N] for compound deposition, while controlling various manufacturing parameters, so that titanium [Ti] and nitrogen [N] form a negative electrode crystal columnar structure deposition on the surface of the negative electrode metal layer , The columnar structure of the negative electrode crystal is controlled to be Ti _x N _y , and its x

y, and x>y, xy is at most 15% y;

1、0

y

0.3； B. Making the positive electrode film: Sputtering and depositing the positive electrode aluminum foil in a vacuum chamber, and controlling the power density and temperature, so that the first layer of the positive electrode metal layer of titanium [Ti] is formed on the surface of the positive electrode aluminum foil, the thickness of the positive electrode metal layer 10nm~1000nm, and continue to use titanium [Ti], oxygen [O] and nitrogen [N] for compound deposition, while controlling various manufacturing parameters to make titanium [Ti], oxygen [O] and nitrogen [N] on the positive electrode The positive electrode crystal columnar structure is deposited on the surface of the metal layer, and the positive electrode crystal columnar structure is controlled to be Ti _x O _2-y N _y , whose x

1, 0

y

0.3;

C. Making a capacitor: Use the negative electrode film and the positive electrode film to make a capacitor, so that the negative electrode film and the positive electrode film become the positive and negative electrodes of the capacitor.

A preferred embodiment of the method for manufacturing the high-capacity positive and negative film of the capacitor of the present invention, wherein in step A, any one of magnetron sputtering or multi-arc magnetron hybrid equipment is used to apply high-purity, high-cleanliness to the negative aluminum foil. Sputter deposition is applied in the vacuum chamber.

In a preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, in step A, the thickness of the negative electrode metal layer is 30 nm-50 nm.

In a preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, in step A, the negative electrode crystal columnar structure is Ti _x N _y , x:y=1.

A preferred embodiment of the method for manufacturing the high-capacity positive and negative electrode film of the capacitor of the present invention, wherein in step B, any one of magnetron sputtering or multi-arc magnetron hybrid equipment is used to apply high-purity, high-cleanliness to the positive aluminum foil. Sputter deposition is applied in the vacuum chamber.

In a preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, the thickness specification of the positive electrode metal layer in step B is the product of the thickness of 1.4 nm per volt according to the voltage requirement.

A preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, wherein after the sputtering deposition is completed in step B, it is taken out to a high-temperature and high-vacuum annealing furnace for annealing, and the vacuum degree is at least 10 ^-3 Mpa , The highest temperature is 550℃, the annealing time is at least 8 hours, and the temperature is naturally cooled to room temperature before taking it out.

A preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, wherein after the sputtering deposition is completed in step B, it is taken out to a high-temperature and high-vacuum annealing furnace for annealing, and the vacuum degree is at least 10 ^-3 Mpa , The highest temperature is 550℃, the annealing time is at least 8 hours, and the temperature is naturally cooled to below 100℃ and then taken out.

A preferred embodiment of the method for manufacturing a high-capacity positive and negative electrode film for a capacitor of the present invention, wherein in step B, the positive electrode film is manufactured in a continuous strip form, cut according to the required size, and subjected to re-formation and electrochemical repair.

In order to make the technical content, the purpose of the invention and the effects achieved by the present invention more complete and clear, the following detailed descriptions are given, and please refer to the disclosed drawings and figure numbers together:

First of all, please refer to the first figure shown in the schematic diagram of the production process of the present invention. The present invention mainly includes the following steps:

y，且x＞y時，x-y至多等於15%y，即x大於y至多為x=1.15y，最佳為x:y=1。 A. Making the negative electrode film (1): Please refer to the second figure as shown in the schematic diagram of the negative electrode film forming operation of the present invention. Use magnetron sputtering or multi-arc magnetron hybrid equipment to apply high purity and high cleanness to the negative electrode aluminum foil. (11) Apply sputtering deposition in the vacuum chamber, and control the power density and temperature, so that the first layer of titanium [Ti] is formed on the surface of the anode aluminum foil (11), the anode metal layer (12), the anode metal layer ( 12) The thickness is 10nm~100nm, the best thickness is 30nm~50nm, and continue to use titanium [Ti] and nitrogen [N] as compound deposition, while controlling various manufacturing parameters, make titanium [Ti] and nitrogen [N] in the The anode crystal columnar structure (13) is deposited on the surface of the anode metal layer (12), and the anode crystal columnar structure (13) is controlled to be Ti _x N _y , whose x

y, and x>y, xy is at most equal to 15% y, that is, x is greater than y at most x=1.15y, and the best is x:y=1.

1、0

y

0.3，完成濺鍍沉積後，取出至高溫高真空退火爐施予退火，其真空度至少為10 ^-3Mpa，最高溫度為550℃，退火時間至少8小時，自然降溫至室溫或100℃以下後取出，該正極薄膜(2)可為連續帶狀式製造，依所需要尺寸作裁切，並施予再化成與電化學修復。 B. Making the positive electrode film (2): Please refer to the third figure together as shown in the schematic diagram of the positive electrode film forming operation of the present invention, using magnetron sputtering or multi-arc magnetron hybrid equipment to apply high purity and high clean anode aluminum foil (21) Apply sputtering deposition in a vacuum chamber, and control the power density and temperature, so that the first layer of titanium [Ti] is formed on the surface of the anode aluminum foil (21). The anode metal layer ( 22) The thickness is 10nm~1000nm, and the best thickness specification is the product of 1.4nm thickness per volt required by the voltage. For example, 100V is 140nm thickness, 200V is 280nm thickness, and continue to use titanium [Ti], oxygen [O] and Nitrogen [N] is used for compound deposition, and various manufacturing parameters are controlled at the same time, so that titanium [Ti], oxygen [O] and nitrogen [N] are deposited on the surface of the cathode metal layer (22) to form a cathode crystal columnar structure (23), and control The anode crystal columnar structure (23) is Ti _x O _2-y N _y , its x

1, 0

y

0.3. After the sputtering deposition is completed, take it out to the high temperature and high vacuum annealing furnace for annealing, the vacuum degree is at least 10 ^-3 Mpa, the maximum temperature is 550℃, the annealing time is at least 8 hours, and the temperature is naturally cooled to room temperature or below 100℃ After being taken out, the positive electrode film (2) can be manufactured in a continuous strip form, cut according to the required size, and subjected to re-formation and electrochemical repair.

C. Making a capacitor: Then the negative film (1) and the positive film (2) are used to make a capacitor, so that the negative film (1) and the positive film (2) become the positive and negative electrodes of the capacitor.

In this way, the capacitor made from the negative electrode film (1) and the positive electrode film (2) can be used to have high specific capacitance values for both the negative electrode film (1) and the positive electrode film (2), and Can have excellent ease of use.

Based on the above, the description of the application of the present invention shows that, compared with the prior art, the present invention mainly utilizes the high specific capacitance value of the negative electrode film and the positive electrode film, so that the negative electrode film and the positive electrode film are made of The capacitor out of it can have excellent convenience in its overall use, and it can be more practical and functional in its overall implementation.

However, the foregoing embodiments or drawings do not limit the product structure or usage mode of the present invention, and any appropriate changes or modifications by persons with ordinary knowledge in the relevant technical field should be regarded as not departing from the patent scope of the present invention.

In summary, the embodiments of the present invention can indeed achieve the expected use effect, and the specific structure disclosed by it has not been seen in similar products, nor has it been disclosed before the application, since it has fully complied with the provisions of the patent law. In accordance with the requirements, Yan filed an application for a patent for invention in accordance with the law, and asked for favors for examination and granted a patent.

1: Anode film

11: Negative aluminum foil

12: Anode metal layer

13: Negative crystal columnar structure

2: Cathode film

21: positive aluminum foil

22: positive metal layer

23: Anode crystal columnar structure

Figure 1: Schematic diagram of the production process of the present invention

Figure 2: Schematic diagram of the forming action of the negative electrode film of the present invention

Figure 3: Schematic diagram of the forming action of the positive electrode film of the present invention

Claims (9)

A method for manufacturing high-capacity positive and negative films for capacitors, which mainly includes the following steps: A. Making negative film: Sputtering and depositing the negative aluminum foil in a vacuum chamber, and controlling the power density and temperature so that it is on the negative aluminum foil The first layer is formed on the surface of the anode metal layer of titanium [Ti], the thickness of the anode metal layer is 10nm~100nm, and the titanium [Ti] and nitrogen [N] are used for compound deposition, and various manufacturing parameters are controlled to make titanium [ Ti] and nitrogen [N] form a negative electrode crystal columnar structure deposition on the surface of the negative electrode metal layer, and control the negative electrode crystal columnar structure to be Ti _x N _y , whose x

y, and x>y, xy is at most 15% y; B. Making positive electrode film: Sputtering and depositing the positive electrode aluminum foil in a vacuum chamber, and controlling the power density and temperature to form the first layer on the surface of the positive electrode aluminum foil It is the positive metal layer of titanium [Ti], the thickness of the positive metal layer is 10nm~1000nm, and the compound deposition of titanium [Ti], oxygen [O] and nitrogen [N] is continued, and various manufacturing parameters are controlled at the same time to make titanium [ Ti], oxygen [O] and nitrogen [N] form a positive electrode crystal columnar structure deposition on the surface of the positive electrode metal layer, and control the positive electrode crystal columnar structure to Ti _x O _2-y N _y , where x

1, 0

y

0.3; C. Making a capacitor: Use the negative electrode film and the positive electrode film to make a capacitor, so that the negative electrode film and the positive electrode film become the positive and negative electrodes of the capacitor. The method for manufacturing high specific capacitance positive and negative electrode films for capacitors according to claim 1, wherein in step A, any one of magnetron sputtering or multi-arc magnetron hybrid equipment is used to vacuum the high-purity and high-cleanness negative electrode aluminum foil. Sputter deposition is applied indoors. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, wherein in step A, the thickness of the negative electrode metal layer is 30 nm to 50 nm. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, wherein in step A, the negative electrode crystal columnar structure is Ti _x N _y , x:y=1. The method for manufacturing high specific capacitance positive and negative electrode films for capacitors according to claim 1, wherein in step B, any one of magnetron sputtering or multi-arc magnetron hybrid equipment is used to vacuum the high-purity, high-purity positive aluminum foil Sputter deposition is applied indoors. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, wherein the thickness specification of the positive electrode metal layer in step B is the product of the thickness of 1.4 nm per volt according to the voltage requirement. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, wherein after sputtering deposition is completed in step B, it is taken out to a high-temperature and high-vacuum annealing furnace for annealing, and the vacuum degree is at least 10 ^-3 Mpa, The maximum temperature is 550℃, the annealing time is at least 8 hours, and the temperature is naturally cooled to room temperature and then taken out. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, wherein after sputtering deposition is completed in step B, it is taken out to a high-temperature and high-vacuum annealing furnace for annealing, and the vacuum degree is at least 10 ^-3 Mpa, The maximum temperature is 550°C, the annealing time is at least 8 hours, and the temperature is naturally cooled to below 100°C before being taken out. The method for manufacturing a high-capacity positive and negative electrode film for a capacitor according to claim 1, 7, or 8, wherein in step B, the positive electrode film is manufactured in a continuous strip form, cut according to the required size, and reshaped into And electrochemical repair.

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