TWI736747B - processing methods - Google Patents

processing methods Download PDF

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TWI736747B
TWI736747B TW107107586A TW107107586A TWI736747B TW I736747 B TWI736747 B TW I736747B TW 107107586 A TW107107586 A TW 107107586A TW 107107586 A TW107107586 A TW 107107586A TW I736747 B TWI736747 B TW I736747B
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cutting
plate
shaped
workpiece
cutting groove
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TW107107586A
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TW201838004A (en
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竹之內研二
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日商迪思科股份有限公司
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/02—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills
    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
    • B28D5/023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels with a cutting blade mounted on a carriage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/60—Preliminary treatment
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    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
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    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
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    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007—Use, recovery or regeneration of abrasive mediums
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
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    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
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    • B28D5/022—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by rotary tools, e.g. drills by cutting with discs or wheels
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
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    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
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    • H01L21/67005—Apparatus not specifically provided for elsewhere
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    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract

[課題]提供一種加工方法，該加工方法對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工之時，可維持加工的品質並且提高加工的速度。 [解決手段]是對在背面側形成有包含金屬之積層體的板狀的被加工物進行加工的加工方法，包含以下步驟：保持步驟，以保持台保持被加工物的正面側，以使積層體露出；切割步驟，在實施保持步驟後，以切割刀沿著切斷預定線切割被加工物，而形成將積層體斷開的切割溝；以及雷射加工步驟，在實施切割步驟後，沿著切割溝照射雷射光束，在切割步驟中，是一邊對被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。[Problem] To provide a processing method that can maintain the quality of the processing and increase the processing speed when processing a plate-like workpiece in which a metal-containing laminate is formed overlying on a planned cutting line. [Solution] is a processing method for processing a plate-shaped workpiece with a laminate containing a metal formed on the back side. The body is exposed; the cutting step, after the holding step is implemented, the object to be processed is cut along the predetermined cutting line with a cutting knife to form a cutting groove that breaks the laminated body; and the laser processing step, after the cutting step is implemented, The cutting groove is irradiated with a laser beam, and in the cutting step, cutting is performed while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

Description

加工方法processing methods

發明領域 本發明是有關於一種加工方法，是用於對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工。FIELD OF THE INVENTION The present invention relates to a processing method for processing a plate-shaped to-be-processed object in which a metal-containing laminate is formed overlying on a planned cutting line.

發明背景 在以行動電話及個人電腦為代表的電子機器中，具備有電子電路等的器件之器件晶片已成為必要的構成要素。器件晶片是藉由例如以複數條切斷預定線(切割道)將晶圓的正面加以區劃，並在各區域形成器件後，沿著此切斷預定線將晶圓切斷而獲得，其中該晶圓是以矽等半導體材料所形成。Background of the Invention In electronic equipment represented by mobile phones and personal computers, device chips including electronic circuits and other devices have become essential components. The device wafer is obtained by, for example, dividing the front surface of the wafer with a plurality of predetermined cutting lines (dicing lines), forming devices in each area, and cutting the wafer along the predetermined cutting lines, wherein the Wafers are formed of semiconductor materials such as silicon.

近年來，在如上述的晶圓的切斷預定線上，大多配置有稱為TEG (測試元件群, Test Elements Group)的評價用元件，該評價用元件是用於評價器件的電氣特性(參照例如專利文獻1、2等)。藉由將TEG配置於切斷預定線上，可以將器件晶片的獲取數量確保在最大限度，並且可以和晶圓的切斷同時地去除評價後的不需要之TEG。 先前技術文獻 專利文獻In recent years, on the planned cutting line of the wafer as described above, an evaluation element called TEG (Test Elements Group) is often arranged, and the evaluation element is used to evaluate the electrical characteristics of the device (see, for example, Patent documents 1, 2, etc.). By arranging the TEG on the planned cutting line, the number of device wafers can be secured to the maximum, and the unnecessary TEG after evaluation can be removed simultaneously with the cutting of the wafer. Prior Art Documents Patent Documents

專利文獻1：日本專利特開平6-349926號公報 專利文獻2：日本專利特開2005-21940號公報Patent Document 1: Japanese Patent Laid-Open No. 6-349926 Patent Document 2: Japanese Patent Laid-Open No. 2005-21940

發明概要 發明欲解決之課題 然而，若欲以切割刀對TEG之類的包含金屬之積層體進行切割、去除時，在切割包含於積層體的金屬之時會變得容易產生延伸、稱為毛邊的突起，其中該切割刀是將磨粒分散於結合材而構成。又，若由切割刀進行的加工的速度變高而使發熱量增加時，毛邊也會容易變大。因此，在此方法中，必須將加工的速度抑制得較低，以免加工之品質降低。SUMMARY OF THE INVENTION The problem to be solved by the invention. However, if a dicing knife is used to cut and remove a metal-containing laminate such as TEG, the metal contained in the laminate is likely to be stretched when cutting the metal, which is called burr. The protrusions in which the cutting knife is constructed by dispersing abrasive grains in the bonding material. In addition, if the processing speed by the cutting blade increases and the amount of heat generation increases, the burrs are also likely to increase. Therefore, in this method, the processing speed must be kept low, so as not to reduce the processing quality.

本發明是有鑒於所述問題點而作成的發明，其目的在於提供一種加工方法，該加工方法對在切斷預定線上重疊而形成有包含金屬之積層體的板狀的被加工物進行加工之時，可維持加工的品質並且提高加工的速度。 用以解決課題之手段The present invention was made in view of the above-mentioned problems, and its object is to provide a processing method that processes a plate-shaped workpiece in which a laminate containing metal is formed overlying on a planned cutting line At the same time, the processing quality can be maintained and the processing speed can be increased. Means to solve the problem

根據本發明之一態樣，可提供一種加工方法，是對在背面側形成有包含金屬之積層體的板狀的被加工物進行加工，該加工方法具備以下步驟： 保持步驟，以保持台保持被加工物的正面側，以使該積層體露出； 切割步驟，在實施該保持步驟後，以切割刀沿著切斷預定線切割被加工物，而形成將該積層體斷開的切割溝；以及 雷射加工步驟，在實施該切割步驟後，沿著該切割溝照射雷射光束， 在該切割步驟中，是一邊對被加工物供給包含有機酸及氧化劑的切割液一邊進行切割。According to one aspect of the present invention, there can be provided a processing method for processing a plate-like workpiece with a metal-containing laminate formed on the back side. The processing method includes the following steps: a holding step to hold the table The front side of the processed object so that the laminated body is exposed; a cutting step, after the holding step is implemented, the processed object is cut along the planned cutting line with a cutting knife to form a cutting groove that breaks the laminated body; And a laser processing step. After the cutting step is performed, a laser beam is irradiated along the cutting groove. In this cutting step, cutting is performed while supplying a cutting fluid containing an organic acid and an oxidizing agent to the workpiece.

於上述之本發明的一態樣中，在該雷射加工步驟中，亦可照射對被加工物具有吸收性之波長的雷射光束來沿著該切斷預定線將被加工物於厚度方向上切斷。In the above-mentioned aspect of the present invention, in the laser processing step, a laser beam having a wavelength that is absorbing to the workpiece can also be irradiated to move the workpiece in the thickness direction along the planned cutting line. Cut off.

又，於上述之本發明的一態樣中，在該雷射加工步驟中，亦可照射對被加工物具有穿透性之波長的雷射光束，以於被加工物形成沿著該切割溝的改質層，且該態樣更具備分割步驟，該分割步驟是在實施該雷射加工步驟後，沿著該改質層分割被加工物。In addition, in the above-mentioned aspect of the present invention, in the laser processing step, a laser beam with a wavelength penetrating the workpiece may be irradiated to form a groove along the cutting groove on the workpiece. The modified layer is further provided with a dividing step, and the dividing step is to divide the object to be processed along the modified layer after the laser processing step is performed.

又，於上述之本發明的一態樣中，在該雷射加工步驟中，亦可將雷射光束照射在被加工物的該背面，且該態樣更具備片材貼附步驟，該片材貼附步驟是於實施該雷射加工步驟前，將片材貼附於被加工物的該正面。 發明效果In addition, in the above-mentioned aspect of the present invention, in the laser processing step, the laser beam may also be irradiated on the back surface of the processed object, and this aspect is further provided with a sheet attaching step. The material attaching step is to attach the sheet material to the front surface of the object to be processed before the laser processing step is performed. Invention effect

在本發明之一態樣的加工方法中，因為是在形成將包含金屬之積層體斷開的切割溝之時，供給包含有機酸與氧化劑的切割液，所以可以一邊利用有機酸與氧化劑將金屬改質而降低其延展性一邊進行切割。藉此，即使提高加工的速度仍然可以抑制毛邊的產生。亦即，可維持加工的品質並且提高加工的速度。In the processing method of one aspect of the present invention, the cutting fluid containing organic acid and oxidizing agent is supplied when forming the cutting groove that separates the metal-containing laminate. Therefore, the metal can be removed by the organic acid and the oxidizing agent. Cut it while modifying it to reduce its ductility. Thereby, even if the processing speed is increased, the generation of burrs can still be suppressed. That is, the processing quality can be maintained and the processing speed can be increased.

用以實施發明之形態 參照附圖，說明本發明的一個態樣的實施形態。本實施形態的加工方法是用於對在背面側形成有包含金屬之積層體的板狀的被加工物進行加工之方法，該加工方法包含：片材貼附步驟(參照圖1(B))、第1保持步驟(參照圖2(A))、切割步驟(參照圖2(B)) 、第2保持步驟(參照圖3(A))、以及雷射加工步驟(參照圖3(B))。Modes for Carrying Out the Invention With reference to the drawings, an embodiment of one aspect of the present invention will be described. The processing method of the present embodiment is a method for processing a plate-shaped to-be-processed object in which a metal-containing laminate is formed on the back side. The processing method includes a sheet attaching step (see FIG. 1(B)) , The first holding step (refer to Figure 2(A)), the cutting step (refer to Figure 2(B)), the second holding step (refer to Figure 3(A)), and the laser processing step (refer to Figure 3(B)) ).

在片材貼附步驟中，是將片材(保護構件)黏貼於在背面側具有積層體的被加工物的正面。在第1保持步驟中，是以切割裝置的工作夾台(第1保持台)保持被加工物的正面側，以使積層體露出。於切割步驟中，是一邊供給包含有機酸與氧化劑的切割液一邊沿著切斷預定線切割被加工物，而形成將積層體斷開的切割溝。In the sheet attaching step, the sheet (protective member) is attached to the front surface of the to-be-processed object having a laminate on the back side. In the first holding step, the front side of the workpiece is held by the work clamp table (first holding table) of the cutting device so that the laminated body is exposed. In the cutting step, the workpiece is cut along the planned cutting line while supplying a cutting fluid containing an organic acid and an oxidizing agent to form a cutting groove that breaks the laminate.

在第2保持步驟中，是以雷射加工裝置的工作夾台(第2保持台)保持被加工物的正面側。在雷射加工步驟中，是從被加工物的背面側照射雷射光束來沿著切斷預定線將被加工物切斷。以下，詳細說明本實施形態的加工方法。In the second holding step, the front side of the workpiece is held by the work chuck table (second holding table) of the laser processing device. In the laser processing step, a laser beam is irradiated from the back side of the workpiece to cut the workpiece along the planned cutting line. Hereinafter, the processing method of this embodiment will be described in detail.

圖1(A)是示意地顯示以本實施形態之加工方法所加工之被加工物11的構成例之立體圖。如圖1(A)所示，本實施形態的被加工物11是採用矽(Si)等半導體材料來形成為圓盤狀的晶圓，並將其正面11a側區分成中央的器件區域、與包圍器件區域的外周剩餘區域。Fig. 1(A) is a perspective view schematically showing a configuration example of a to-be-processed object 11 processed by the processing method of this embodiment. As shown in FIG. 1(A), the workpiece 11 of this embodiment is a wafer formed into a disc shape using a semiconductor material such as silicon (Si), and the front side 11a is divided into a central device area, and The remaining area surrounding the outer periphery of the device area.

器件區域是以排列成格子狀之切斷預定線(切割道，Street)13進一步區劃為複數個區域，且於各區域中形成有IC(積體電路，Integrated Circuit)等器件15。又，於被加工物11的背面11b側設有包含金屬之積層體17。此積層體17是以例如鈦(Ti)、鎳(Ni)、金(Au)等所形成之厚度為數μm左右的多層金屬膜，並作為電極等而發揮功能。此積層體17也形成在與切斷預定線13重疊的區域。The device area is further divided into a plurality of areas by planned cutting lines (Street) 13 arranged in a grid, and devices 15 such as IC (Integrated Circuit) are formed in each area. In addition, a laminate 17 containing metal is provided on the side of the back surface 11b of the workpiece 11. This laminate 17 is a multilayer metal film formed of titanium (Ti), nickel (Ni), gold (Au), etc., with a thickness of about several μm, and functions as an electrode or the like. This layered body 17 is also formed in a region overlapping the planned cutting line 13.

再者，在本實施形態中，雖然是以矽等半導體材料所形成之圓盤狀的晶圓作為被加工物11，但是對被加工物11之材質、形狀、構造、大小等並未限制。同樣地，對器件15或積層體17的種類、數量、形狀、構造、大小、配置等也未限制。例如，也可以將沿著切斷預定線13形成有作為電極而發揮功能的積層體17的封裝基板等，作為被加工物11來使用。In addition, in this embodiment, although a disc-shaped wafer formed of a semiconductor material such as silicon is used as the workpiece 11, the material, shape, structure, size, etc. of the workpiece 11 are not limited. Similarly, there are no restrictions on the type, number, shape, structure, size, arrangement, etc. of the devices 15 or the laminate 17. For example, a package substrate in which a laminate 17 functioning as an electrode is formed along the planned cutting line 13 may be used as the workpiece 11.

在本實施形態的加工方法中，首先是進行片材貼附步驟，其是將片材(保護構件)黏貼於上述之被加工物11的正面11a。圖1(B)是用於說明片材貼附步驟的立體圖。如圖1(B)所示，於片材貼附步驟中，是將直徑比被加工物11更大的樹脂製的片材(保護構件)21黏貼於被加工物11的正面11a側。又，將環狀的框架23固定於片材21的外周部分。In the processing method of the present embodiment, first, a sheet attaching step is performed, which is to attach a sheet (protective member) to the front surface 11a of the above-mentioned to-be-processed object 11. Fig. 1(B) is a perspective view for explaining the sheet attaching step. As shown in FIG. 1(B), in the sheet attaching step, a resin sheet (protective member) 21 having a larger diameter than the workpiece 11 is attached to the front surface 11a side of the workpiece 11. In addition, the ring-shaped frame 23 is fixed to the outer peripheral portion of the sheet 21.

藉此，被加工物11是透過片材21而被環狀的框架23所支撐。又，在本實施形態中，雖然是說明關於對透過片材21而被支撐於環狀的框架23的狀態之被加工物11進行加工的例子，但也可以不使用片材21或框架23而對被加工物11進行加工。在此情況下，可省略片材貼附步驟。又，亦可將與被加工物11同等的晶圓或其他的基板等作為保護構件來黏貼於被加工物11，以取代樹脂製的片材21。Thereby, the workpiece 11 is supported by the ring-shaped frame 23 through the sheet 21. In addition, in this embodiment, although an example of processing the workpiece 11 in a state supported by the ring-shaped frame 23 through the sheet 21 is described, the sheet 21 or the frame 23 may not be used instead. The workpiece 11 is processed. In this case, the sheet attaching step can be omitted. In addition, instead of the resin-made sheet 21, a wafer or other substrate equivalent to the workpiece 11 may be used as a protective member to be attached to the workpiece 11.

於片材貼附步驟後是進行第1保持步驟，該第1保持步驟是以切割裝置的工作夾台(第1保持台)保持被加工物11。圖2(A)是用於說明第1保持步驟的局部截面側視圖。第1保持步驟是使用例如圖2(A)所示的切割裝置2來進行。切割裝置2具備有用於吸引、保持被加工物11之工作夾台(第1保持台)4。After the sheet attaching step, a first holding step is performed. The first holding step is to hold the workpiece 11 on the work clamp table (first holding table) of the cutting device. Fig. 2(A) is a partial cross-sectional side view for explaining the first holding step. The first holding step is performed using, for example, the cutting device 2 shown in FIG. 2(A). The cutting device 2 is provided with a work clamp table (first holding table) 4 for sucking and holding the workpiece 11.

工作夾台4是與馬達等的旋轉驅動源(圖未示)相連結，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，在工作夾台4的下方設置有加工進給機構(圖未示)，工作夾台4是藉由此加工進給機構而朝加工進給方向(第1水平方向)移動。The work chuck table 4 is connected to a rotation drive source (not shown) such as a motor, and rotates around a rotation axis substantially parallel to the vertical direction. In addition, a machining feed mechanism (not shown) is provided below the work chuck table 4, and the work chuck table 4 is moved in the machining feed direction (first horizontal direction) by the machining feed mechanism.

工作夾台4的上表面的一部分是形成為用於吸引、保持被加工物11(片材21)的保持面4a。保持面4a是透過形成在工作夾台4的內部的吸引路(圖未示)等而連接到吸引源(圖未示)。藉由吸引源的負壓作用在保持面4a，可將被加工物11吸引、保持於工作夾台4。於該工作夾台4的周圍設有用於固定環狀的框架23的複數個夾具6。A part of the upper surface of the work chuck table 4 is formed as a holding surface 4a for sucking and holding the workpiece 11 (sheet 21). The holding surface 4a is connected to a suction source (not shown) through a suction path (not shown) or the like formed inside the work clamp table 4. By the negative pressure of the suction source acting on the holding surface 4a, the workpiece 11 can be sucked and held on the work clamping table 4. A plurality of clamps 6 for fixing the ring-shaped frame 23 are provided around the work clamp table 4.

在第1保持步驟中，首先是使黏貼於被加工物11的正面11a側的片材21接觸於工作夾台4的保持面4a，並使吸引源的負壓作用。並一併利用夾具6來固定框架23。藉此，被加工物11是在背面11b側的積層體17朝上方露出的狀態下被保持。In the first holding step, first, the sheet 21 adhered to the front surface 11a of the workpiece 11 is brought into contact with the holding surface 4a of the work chuck 4, and the negative pressure of the suction source is applied. The jig 6 is used to fix the frame 23 together. Thereby, the to-be-processed object 11 is hold|maintained in the state which exposed upward the laminated body 17 on the side of the back surface 11b.

於第1保持步驟後進行切割步驟，該切割步驟是形成將積層體17斷開的切割溝。圖2(B)是用於說明切割步驟的局部截面側視圖。切割步驟是繼續使用切割裝置2來進行。如圖2(B)所示，切割裝置2更具備有配置於工作夾台4的上方的切割單元8。After the first holding step, a cutting step is performed, and this cutting step is to form a cutting groove that breaks the laminated body 17. Fig. 2(B) is a partial cross-sectional side view for explaining the cutting step. The cutting step is to continue using the cutting device 2 to proceed. As shown in FIG. 2(B), the cutting device 2 is further provided with a cutting unit 8 arranged above the work clamp table 4.

切割單元8具備有主軸(圖未示)，該主軸是成為相對於加工進給方向大致垂直的旋轉軸。在主軸的一端側，裝設有環狀的切割刀10，該環狀的切割刀10是將磨粒分散於結合材而構成。在主軸的另一端側，連結有馬達等的旋轉驅動源(圖未示)，且裝設在主軸的一端側的切割刀10，是藉由從該旋轉驅動源所傳來的力而旋轉。The cutting unit 8 is provided with a main shaft (not shown in the figure), and the main shaft becomes a rotation axis substantially perpendicular to the machining feed direction. On one end side of the main shaft, a ring-shaped cutting knife 10 is installed, and the ring-shaped cutting knife 10 is configured by dispersing abrasive grains in a bonding material. On the other end side of the main shaft, a rotary drive source (not shown) such as a motor is connected, and the cutting knife 10 installed on one end side of the main shaft is rotated by the force transmitted from the rotary drive source.

又，主軸是被移動機構(圖未示)所支撐。切割刀10是藉由此移動機構而朝垂直於加工進給方向的分度進給方向(第2水平方向)、以及鉛直方向移動。於切割刀10的側邊，是將一對噴嘴12配置成包夾切割刀10。噴嘴12是構成為可以對切割刀10或被加工物11供給切割液14。In addition, the main shaft is supported by a moving mechanism (not shown). The cutting blade 10 is moved in the indexing feed direction (the second horizontal direction) perpendicular to the processing feed direction and the vertical direction by this moving mechanism. On the side of the cutting knife 10, a pair of nozzles 12 are arranged to sandwich the cutting knife 10. The nozzle 12 is configured to be able to supply the cutting fluid 14 to the cutting blade 10 or the workpiece 11.

在切割步驟中，首先是使工作夾台4旋轉，並將成為對象之切斷預定線13的伸長的方向對準於切割裝置2之加工進給方向。又，使工作夾台4及切割單元8相對地移動，而將切割刀10的位置於成為對象之切斷預定線13的延長線上對準。然後，使切割刀10的下端移動至比積層體17的下表面更低的位置。再者，藉由使用例如對紅外線具有靈敏度的相機等，可以從背面11b側確認切斷預定線13的位置。In the cutting step, first, the work chuck table 4 is rotated, and the direction of the extension of the planned cutting line 13 to be targeted is aligned with the processing feed direction of the cutting device 2. In addition, the work clamp table 4 and the cutting unit 8 are relatively moved, and the position of the cutting blade 10 is aligned on the extension line of the target cutting line 13. Then, the lower end of the cutting blade 10 is moved to a position lower than the lower surface of the layered body 17. Furthermore, by using, for example, a camera with sensitivity to infrared rays, it is possible to confirm the position of the planned cutting line 13 from the side of the back surface 11b.

之後，一邊旋轉切割刀10一邊使工作夾台4朝加工進給方向移動。並一併從噴嘴12對切割刀10及被加工物11供給包含有機酸與氧化劑的切割液14。藉此，使切割刀10沿著對象的切斷預定線13切入，而可以在被加工物11的背面11b側形成將積層體17斷開的切割溝19a。After that, while rotating the cutting knife 10, the work chuck table 4 is moved in the processing feed direction. In addition, a cutting fluid 14 containing an organic acid and an oxidizing agent is supplied to the cutting blade 10 and the workpiece 11 from the nozzle 12 together. Thereby, the cutting blade 10 is cut along the target cutting line 13, and the cutting groove 19 a that breaks the laminated body 17 can be formed on the back surface 11 b side of the workpiece 11.

如本實施形態，藉由於切割液14中包含有機酸，可以將積層體17中的金屬改質，而抑制其延展性。又，藉由於切割液14中包含氧化劑，積層體17中的金屬的表面即變得容易氧化。其結果，可充份地降低積層體17中的金屬的延展性，而提高加工性。As in the present embodiment, since the dicing fluid 14 contains an organic acid, the metal in the laminate 17 can be modified and the ductility can be suppressed. In addition, since the cutting fluid 14 contains an oxidizing agent, the surface of the metal in the laminate 17 is easily oxidized. As a result, the ductility of the metal in the layered body 17 can be sufficiently reduced, and the workability can be improved.

作為包含於切割液14中的有機酸，可採用例如，分子內具有至少1個羧基和至少1個胺基的化合物。此時，胺基中之至少1個宜為2級或3級的胺基。又，作為有機酸而使用之化合物宜具有取代基。As the organic acid contained in the dicing fluid 14, for example, a compound having at least one carboxyl group and at least one amine group in the molecule can be used. In this case, at least one of the amine groups is preferably a secondary or tertiary amine group. In addition, the compound used as an organic acid preferably has a substituent.

可以作為有機酸而使用之胺基酸，可列舉出甘胺酸、二羥乙基甘胺酸、甘胺醯甘胺酸、羥乙基甘胺酸、N-甲基甘胺酸、β-丙胺酸、L-丙胺酸、L-2-胺基丁酸、L-正纈胺酸、L-纈胺酸、L-白胺酸、L-正白胺酸、L-別異白胺酸、L-異白胺酸、L-苯丙胺酸、L-脯胺酸、肌胺酸、L-鳥胺酸、L-離胺酸、牛磺酸、L-絲胺酸、L-蘇胺酸、L-別蘇胺酸、L-高絲胺酸、L-甲狀腺素、L-酪胺酸、3,5-二碘-L-酪胺酸、β-(3,4-二羥基苯基)-L-丙胺酸、4-羥基-L-脯胺酸、L-半胱胺酸、L-甲硫胺酸、L-乙硫胺酸、L-羊毛硫胺酸、L-胱硫醚、L-胱胺酸、L-氧化半胱胺酸、L-麩胺酸、L-天冬胺酸、S-(羧甲基)-L-半胱胺酸、4-胺基丁酸、L-天冬醯胺酸、L-麩醯胺酸、氮絲胺酸、L-刀豆胺酸、L-瓜胺酸、L-精胺酸、δ-羥基-L-離胺酸、肌酸、L-犬尿胺酸、L-組胺酸、1-甲基-L-組胺酸、3-甲基-L-組胺酸、L-色胺酸、放線菌黴素C1、麥角硫鹼(ergothioneine)、蜂毒明肽(apamin)、第一型血管收縮素(angiotensin I)、第二型血管收縮素(angiotensin II)及抗痛素(antipain)等。其中，尤以甘胺酸、L-丙胺酸、L-脯胺酸、L-組胺酸、L-離胺酸、以及二羥乙基甘胺酸為較佳。Amino acids that can be used as organic acids include glycine, dihydroxyethyl glycine, glycine glycine, hydroxyethyl glycine, N-methylglycine, β- Alanine, L-alanine, L-2-aminobutyric acid, L-ortholine, L-valine, L-leucine, L-ortholine, L-alloisoleucine , L-isoleucine, L-phenylalanine, L-proline, creatine, L-ornithine, L-lysine, taurine, L-serine, L-threonine , L-Allothreonine, L-homoserine, L-thyroxine, L-tyrosine, 3,5-diiodo-L-tyrosine, β-(3,4-dihydroxyphenyl) -L-alanine, 4-hydroxy-L-proline, L-cysteine, L-methionine, L-ethionine, L-lanthionine, L-cystathionine, L-cystine, L-oxycysteine, L-glutamine, L-aspartic acid, S-(carboxymethyl)-L-cysteine, 4-aminobutyric acid, L -Aspartic acid, L-glutamic acid, azserine, L-canavaric acid, L-citrulline, L-arginine, δ-hydroxy-L-lysine, creatine , L-kynurenine, L-histidine, 1-methyl-L-histidine, 3-methyl-L-histidine, L-tryptophan, actinomycin C1, ergot Sulfur alkali (ergothioneine), melittin (apamin), first type angiotensin (angiotensin I), second type angiotensin (angiotensin II) and antipain (antipain) and so on. Among them, glycine, L-alanine, L-proline, L-histidine, L-lysine, and dihydroxyethylglycine are particularly preferred.

又，可以作為有機酸而使用的胺基多元酸(amino polyacid)，可列舉出亞胺二乙酸、氮基三乙酸、二乙三胺五乙酸、乙二胺四乙酸、羥乙基亞胺二乙酸、氮基三亞甲基膦酸(nitrilotris(methylene)phosphonic acid)、乙二胺-N,N,N',N'-四亞甲基磺酸、1,2-二胺丙烷四乙酸、二醇醚二胺四乙酸、反式環己烷二胺四乙酸、乙二胺鄰羥基苯基乙酸、乙二胺二琥珀酸(SS體)、β-丙胺酸二乙酸、N-(2-羧酸根合乙基)-L-天冬胺酸、N,N'-雙(2-羥基芐基)乙二胺N,N'-二乙酸等。In addition, amino polyacids that can be used as organic acids include iminodiacetic acid, nitrotriacetic acid, diethylenetriaminepentaacetic acid, ethylenediaminetetraacetic acid, and hydroxyethylimine diacetic acid. Acetic acid, nitrilotris(methylene)phosphonic acid, ethylenediamine-N,N,N',N'-tetramethylenesulfonic acid, 1,2-diaminepropanetetraacetic acid, two Alcohol ether diamine tetraacetic acid, trans cyclohexane diamine tetraacetic acid, ethylene diamine o-hydroxyphenyl acetic acid, ethylene diamine disuccinic acid (SS body), β-alanine diacetic acid, N-(2-carboxy Aminoethyl)-L-aspartic acid, N,N'-bis(2-hydroxybenzyl)ethylenediamine N,N'-diacetic acid, etc.

此外，可以作為有機酸而使用之羧酸，可列舉出甲酸、乙醇酸、丙酸、乙酸、丁酸、戊酸、己酸、草酸、丙二酸、戊二酸、己二酸、蘋果酸、琥珀酸、庚二酸、氫硫乙酸、乙醛酸、氯乙酸、丙酮酸、乙醯乙酸、戊二酸等之飽和羧酸，或丙烯酸、甲基丙烯酸、巴豆酸、反丁烯二酸、順丁烯二酸、中康酸、檸康酸、烏頭酸等之不飽和羧酸、安息香酸類、甲苯甲酸、鄰苯二甲酸類、萘甲酸類、焦蜜石酸、以及萘二甲酸等之環狀不飽和羧酸等。In addition, carboxylic acids that can be used as organic acids include formic acid, glycolic acid, propionic acid, acetic acid, butyric acid, valeric acid, caproic acid, oxalic acid, malonic acid, glutaric acid, adipic acid, and malic acid. , Succinic acid, pimelic acid, hydrogen thioacetic acid, glyoxylic acid, chloroacetic acid, pyruvic acid, acetoacetic acid, glutaric acid and other saturated carboxylic acids, or acrylic acid, methacrylic acid, crotonic acid, fumaric acid , Maleic acid, mesaconic acid, citraconic acid, aconitic acid and other unsaturated carboxylic acids, benzoic acid, toluic acid, phthalic acid, naphthoic acid, pyromellitic acid, naphthalenedicarboxylic acid, etc. The cyclic unsaturated carboxylic acid and so on.

作為包含於切割液14中的氧化劑，可以使用例如，過氧化氫、過氧化物、硝酸鹽、碘酸鹽、過碘酸鹽、次氯酸鹽、亞氯酸鹽、氯酸鹽、過氯酸鹽、過硫酸鹽、重鉻酸鹽、過錳酸鹽、鈰酸鹽、釩酸鹽、臭氧水及銀(II)鹽、鐵(III)鹽、或其有機錯鹽等。As the oxidizing agent contained in the cutting fluid 14, for example, hydrogen peroxide, peroxide, nitrate, iodate, periodate, hypochlorite, chlorite, chlorate, perchlorate can be used. Acid salt, persulfate, dichromate, permanganate, cerate, vanadate, ozone water, silver (II) salt, iron (III) salt, or organic aluminum salt thereof.

又，亦可在切割液14中混合防蝕劑。藉由混合防蝕劑，可防止被加工物11中所含有之金屬腐蝕(溶出)。作為防蝕劑，較理想的是使用例如，分子內具有3個以上的氮原子，且具有稠環構造之芳香雜環化合物、或分子內具有4個以上的氮原子之芳香雜環化合物。此外，芳環化合物宜包含羧基、磺酸基、羥基、烷氧基。具體而言，宜為四唑衍生物、1,2,3-三唑衍生物、以及1,2,4-三唑衍生物。In addition, an anti-corrosion agent may be mixed in the cutting fluid 14. By mixing the corrosion inhibitor, the metal contained in the workpiece 11 can be prevented from being corroded (eluted). As the corrosion inhibitor, it is desirable to use, for example, an aromatic heterocyclic compound having 3 or more nitrogen atoms in the molecule and having a condensed ring structure, or an aromatic heterocyclic compound having 4 or more nitrogen atoms in the molecule. In addition, the aromatic ring compound preferably contains a carboxyl group, a sulfonic acid group, a hydroxyl group, and an alkoxy group. Specifically, tetrazole derivatives, 1,2,3-triazole derivatives, and 1,2,4-triazole derivatives are suitable.

可以作為防蝕劑而使用的四唑衍生物，可列舉出在形成四唑環之氮原子上不具有取代基，且在四唑的第5位置上導入以下的基之四唑衍生物：選自於由磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代之烷基。The tetrazole derivatives that can be used as corrosion inhibitors include tetrazole derivatives that do not have a substituent on the nitrogen atom forming the tetrazole ring and have the following groups introduced into the fifth position of the tetrazole: Substituents in the group consisting of sulfonic acid, amino, carbamate, carbamido, sulfamoyl and sulfonamide, or used in the group consisting of hydroxyl, carboxyl, sulfonic acid An alkyl group substituted with at least one substituent in the group consisting of an acid group, an amino group, a carbamate group, a carbamido group, a sulfasulfonyl group, and a sulfonamide group.

又，可以作為防蝕劑而使用的1,2,3-三唑衍生物，可列舉出在形成1,2,3-三唑環之氮原子上不具有取代基，且在1,2,3-三唑的第4位置及/或第5位置上導入以下的基之三唑衍生物：選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。In addition, 1,2,3-triazole derivatives that can be used as corrosion inhibitors include no substituents on the nitrogen atom forming the 1,2,3-triazole ring, and 1,2,3 -Triazole derivatives in which the following groups are introduced at the 4th position and/or the 5th position of the triazole: selected from the group consisting of hydroxyl, carboxyl, sulfonic acid, amine, carbamoyl, carbamido, and amine Substituents in the group consisting of sulfonamide and sulfonamide, or are selected from the group consisting of hydroxyl, carboxyl, sulfonic acid, amine, carbamide, carbamide, and sulfonamide And an alkyl group or an aryl group substituted by at least one substituent in the group consisting of a sulfonamide group.

又，可以作為防蝕劑而使用的1,2,4-三唑衍生物，可列舉出在形成1,2,4-三唑環之氮原子上不具有取代基，且在1,2,4-三唑的第2位置及/或第5位置上導入以下的基之三唑衍生物：選自於由磺酸基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的取代基、或是用選自於由羥基、羧基、磺酸基、胺基、胺甲醯基、碳醯胺基、胺磺醯基以及磺醯胺基所構成之群組中的至少1個取代基所取代的烷基或芳基。In addition, the 1,2,4-triazole derivatives that can be used as corrosion inhibitors include no substituents on the nitrogen atom forming the 1,2,4-triazole ring, and 1,2,4 -Triazole derivatives in which the following groups are introduced at the second position and/or the fifth position of the triazole: selected from the group consisting of sulfonic acid group, carbamethan group, carbamido group, sulfasulfamide group and sulfonamide group Substituents in the group consisting of groups, or are selected from the group consisting of hydroxyl, carboxyl, sulfonic acid, amine, carbamate, carbamido, sulfasulfonyl and sulfonamide An alkyl or aryl group substituted by at least one substituent in the group.

當重複上述之工序，而沿著全部的切斷預定線13都形成切割溝19a時，切割步驟即結束。在本實施形態中，因為是一邊對被加工物11供給包含有機酸及氧化劑的切割液14一邊進行切割，所以可一邊將包含於積層體17的金屬改質以降低其延展性，一邊進行切割。藉此，即使提高加工的速度仍然可以抑制毛邊的產生。When the above-mentioned steps are repeated and the cutting grooves 19a are formed along all the planned cutting lines 13, the cutting step is ended. In this embodiment, cutting is performed while supplying the cutting fluid 14 containing an organic acid and an oxidizing agent to the workpiece 11. Therefore, the metal contained in the laminate 17 can be modified to reduce its ductility while cutting. . Thereby, even if the processing speed is increased, the generation of burrs can still be suppressed.

於切割步驟後是進行以雷射加工裝置的工作夾台(第2保持台)保持被加工物11的第2保持步驟。圖3(A)是用於說明第2保持步驟的局部截面側視圖。第2保持步驟是採用例如圖3(A)所示的雷射加工裝置22來進行。雷射加工裝置22具備有用於吸引、保持被加工物11的工作夾台(第2保持台)24。After the cutting step, a second holding step of holding the workpiece 11 with the work chuck table (second holding table) of the laser processing device is performed. Fig. 3(A) is a partial cross-sectional side view for explaining the second holding step. The second holding step is performed using, for example, the laser processing apparatus 22 shown in FIG. 3(A). The laser processing device 22 is provided with a work clamp table (second holding table) 24 for sucking and holding the workpiece 11.

工作夾台24是與馬達等的旋轉驅動源(圖未示)相連結，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，於工作夾台24的下方設置有移動機構(圖未示)，工作夾台24是藉由此移動機構而朝加工進給方向(第1水平方向)及分度進給方向(第2水平方向)移動。The work chuck table 24 is connected to a rotation drive source (not shown) such as a motor, and rotates around a rotation axis substantially parallel to the vertical direction. In addition, a moving mechanism (not shown) is provided under the work chuck table 24, and the work chuck table 24 is moved in the machining feed direction (first horizontal direction) and indexing feed direction (second horizontal direction) by this moving mechanism. Horizontal direction) to move.

工作夾台24的上表面的一部分是形成為用於吸引、保持被加工物11(片材21)的保持面24a。保持面24a是透過形成在工作夾台24的內部的吸引路(圖未示)等而連接到吸引源(圖未示)。藉由使吸引源的負壓作用在保持面24a，可將被加工物11吸引、保持於工作夾台24。於該工作夾台24的周圍設有用於固定環狀的框架23的複數個夾具26。A part of the upper surface of the work chuck table 24 is formed as a holding surface 24a for sucking and holding the workpiece 11 (sheet 21). The holding surface 24a is connected to a suction source (not shown) through a suction path (not shown) or the like formed inside the work clamp table 24. By applying the negative pressure of the suction source to the holding surface 24a, the workpiece 11 can be sucked and held on the work clamp table 24. A plurality of clamps 26 for fixing the ring-shaped frame 23 are provided around the work clamp table 24.

在第2保持步驟中，首先是使黏貼於被加工物11的正面11a側的片材21接觸於工作夾台24的保持面24a，並使吸引源的負壓作用。並一併利用夾具26來固定框架23。藉此，被加工物11是在背面11b側的積層體17朝上方露出的狀態下被保持。In the second holding step, first, the sheet 21 adhered to the front surface 11a of the workpiece 11 is brought into contact with the holding surface 24a of the work chuck table 24, and the negative pressure of the suction source is applied. The frame 23 is fixed by the clamp 26 together. Thereby, the to-be-processed object 11 is hold|maintained in the state which exposed upward the laminated body 17 on the side of the back surface 11b.

於第2保持步驟後是進行雷射加工步驟，該雷射加工步驟是從被加工物11的背面11b側照射雷射光束來沿著切斷預定線13將被加工物11切斷。雷射加工步驟是繼續使用雷射加工裝置22來進行。圖3(B)是用於說明雷射加工步驟的局部截面側視圖。如圖3(B)所示，雷射加工裝置22更具備有配置於工作夾台24的上方的雷射照射單元28。After the second holding step, a laser processing step is performed in which a laser beam is irradiated from the back surface 11 b side of the workpiece 11 to cut the workpiece 11 along the planned cutting line 13. The laser processing step is continuously performed using the laser processing device 22. Fig. 3(B) is a partial cross-sectional side view for explaining the laser processing steps. As shown in FIG. 3(B), the laser processing device 22 further includes a laser irradiation unit 28 arranged above the work clamp table 24.

雷射照射單元28會將以雷射振盪器(圖未示)所脈衝振盪產生的雷射光束28a於規定的位置照射、聚光。雷射振盪器是構成為可以脈衝振盪產生被加工物11可吸收之波長(對被加工物11具有吸收性之波長、容易被吸收之波長)的雷射光束28a。The laser irradiation unit 28 irradiates and condenses the laser beam 28a generated by the pulse oscillation of a laser oscillator (not shown) at a predetermined position. The laser oscillator is configured to generate a laser beam 28a of a wavelength that can be absorbed by the workpiece 11 (wavelength that is absorptive to the workpiece 11, and a wavelength that is easily absorbed) by pulse oscillation.

在雷射加工步驟中，首先是使工作夾台24旋轉，並將成為對象的切割溝19a(即切斷預定線13)的伸長方向對準於雷射加工裝置22的加工進給方向。又，使工作夾台24移動，而將雷射照射單元28的位置於成為對象的切割溝19a的延長線上對準。In the laser processing step, first, the work chuck 24 is rotated, and the elongation direction of the target cutting groove 19a (that is, the planned cutting line 13) is aligned with the processing feed direction of the laser processing device 22. In addition, the work clamp table 24 is moved to align the position of the laser irradiation unit 28 on the extension line of the target cutting groove 19a.

然後，如圖3(B)所示，一邊從雷射照射單元28朝向被加工物11的背面11b側照射雷射光束28a，一邊使工作夾台24朝加工進給方向移動。在此，是使雷射光束28a聚光於切割溝19a之底、被加工物11的正面11a、內部等。Then, as shown in FIG. 3(B), while irradiating the laser beam 28a from the laser irradiation unit 28 toward the back surface 11b side of the workpiece 11, the work chuck 24 is moved in the processing feed direction. Here, the laser beam 28a is focused on the bottom of the cutting groove 19a, the front surface 11a of the workpiece 11, the inside, and the like.

藉此，可以沿著成為對象的切割溝19a照射雷射光束28a，而形成如將被加工物11於厚度方向上切斷的截口(切口)19b。當重複上述的動作，而例如沿著全部的切割溝19a來形成截口19b，且將被加工物11分割成複數個晶片時，雷射加工步驟即結束。Thereby, it is possible to irradiate the laser beam 28a along the cut groove 19a to be the target to form a cut (notch) 19b that cuts the workpiece 11 in the thickness direction. When the above-mentioned operation is repeated, for example, the notches 19b are formed along all the cutting grooves 19a, and the workpiece 11 is divided into a plurality of wafers, the laser processing step ends.

如以上，在本實施形態的加工方法中，因為是在形成將包含金屬的積層體17斷開的切割溝19a之時，供給包含有機酸與氧化劑的切割液14，所以可以一邊利用有機酸與氧化劑將金屬改質而降低其延展性一邊進行切割。藉此，即使提高加工的速度仍然可以抑制毛邊的產生。亦即，可維持加工的品質並且提高加工的速度。As described above, in the processing method of this embodiment, the cutting fluid 14 containing organic acid and oxidizing agent is supplied when forming the cutting groove 19a that separates the metal-containing laminate 17, so it is possible to use both organic acid and The oxidant modifies the metal and reduces its ductility while cutting. Thereby, even if the processing speed is increased, the generation of burrs can still be suppressed. That is, the processing quality can be maintained and the processing speed can be increased.

再者，本發明並不因上述實施形態之記載而受到限制，並可作各種變更而實施。例如，在上述實施形態的雷射加工步驟中，雖然是藉由使用被加工物11可吸收之波長的雷射光束28a的燒蝕加工來將被加工物11切斷，但亦可利用其他方法來對被加工物11進行加工。In addition, the present invention is not limited by the description of the above-mentioned embodiment, and can be implemented with various changes. For example, in the laser processing step of the above embodiment, although the workpiece 11 is cut by ablation processing using a laser beam 28a of a wavelength that can be absorbed by the workpiece 11, other methods may also be used To process the workpiece 11.

圖4是用於說明變形例之雷射加工步驟的局部截面側視圖。如圖4所示，變形例的雷射加工步驟是採用與上述實施形態同樣的雷射加工裝置22來進行。然而，變形例的雷射加工步驟的雷射照射單元28是構成為可以將於被加工物11中可穿透之波長(對被加工物11具有穿透性之波長、難以被吸收之波長)的雷射光束28b於規定的位置照射、聚光。Fig. 4 is a partial cross-sectional side view for explaining a laser processing step of a modification example. As shown in FIG. 4, the laser processing step of the modified example is performed using the same laser processing device 22 as the above-mentioned embodiment. However, the laser irradiation unit 28 of the laser processing step of the modified example is configured to be able to penetrate the workpiece 11 (wavelength that is transparent to the workpiece 11, and the wavelength that is difficult to be absorbed) The laser beam 28b is irradiated and condensed at a predetermined position.

在變形例的雷射加工步驟中，首先是使工作夾台24旋轉，並將成為對象的切割溝19a(即切斷預定線13)的伸長方向對準於雷射加工裝置22的加工進給方向。又，使工作夾台24移動，而將雷射照射單元28的位置於成為對象的切割溝19a的延長線上對準。In the laser processing step of the modified example, first, the work chuck table 24 is rotated, and the elongation direction of the target cutting groove 19a (that is, the planned cutting line 13) is aligned with the processing feed of the laser processing device 22 direction. In addition, the work clamp table 24 is moved to align the position of the laser irradiation unit 28 on the extension line of the target cutting groove 19a.

然後，如圖5(B)所示，一邊從雷射照射單元28朝向被加工物11的背面11b側照射雷射光束28b，一邊使工作夾台24朝加工進給方向移動。在此，是使雷射光束28b聚光於例如被加工物11的內部。Then, as shown in FIG. 5(B), while irradiating the laser beam 28b from the laser irradiation unit 28 toward the back surface 11b side of the workpiece 11, the work chuck 24 is moved in the processing feed direction. Here, the laser beam 28b is focused on the inside of the workpiece 11, for example.

藉此，沿著成為對象的切割溝19a照射於被加工物11中可穿透之波長的雷射光束28b，而可以藉由多光子吸收將被加工物11的內部改質。其結果，在被加工物11的內部，會沿著切割溝19a而形成成為分割之起點的改質層19c。Thereby, the laser beam 28b of the wavelength that can penetrate in the workpiece 11 is irradiated along the target cutting groove 19a, and the interior of the workpiece 11 can be modified by multiphoton absorption. As a result, in the inside of the workpiece 11, a modified layer 19c serving as the starting point of division is formed along the cutting groove 19a.

當重複上述之動作，而沿著全部的切斷預定線13都形成改質層19c時，變形例的雷射加工步驟即結束。此改質層19c亦可例如以裂隙到達被加工物11之正面11a或切割溝19a之底的條件來形成。又，也可以相對於一條切斷預定線13，在不同深度的位置上重疊而形成複數個改質層19c。When the above-mentioned operations are repeated and the modified layer 19c is formed along all the planned cutting lines 13, the laser processing step of the modification example ends. The modified layer 19c can also be formed, for example, under the condition that the crack reaches the front surface 11a of the workpiece 11 or the bottom of the cutting groove 19a. In addition, a plurality of modified layers 19c may be formed by overlapping at positions of different depths with respect to one planned cutting line 13.

又，於變形例的雷射加工步驟後，宜進一步進行沿著改質層19c分割被加工物11的分割步驟。圖5(A)及圖5(B)是用於說明分割步驟的局部截面側視圖。分割步驟是使用例如圖5(A)及圖5(B)所示的擴張裝置32來進行。如圖5(A)及圖5(B)所示，擴張裝置32具備有用於支撐被加工物11的支撐構造34、及圓筒狀的擴張滾筒36。In addition, after the laser processing step of the modified example, it is preferable to further perform a dividing step of dividing the workpiece 11 along the modified layer 19c. 5(A) and 5(B) are partial cross-sectional side views for explaining the dividing step. The dividing step is performed using, for example, the expansion device 32 shown in FIGS. 5(A) and 5(B). As shown in FIG. 5(A) and FIG. 5(B), the expansion device 32 includes a support structure 34 for supporting the workpiece 11 and a cylindrical expansion roller 36.

支撐構造34包含支撐台38，該支撐台58具有在平面視角下圓形的開口部。在此支撐台38的上表面可載置環狀的框架23。在支撐台38的外周部分，設置有用於固定框架23的複數個夾具40。支撐台38是藉由用於升降支撐構造34的升降機構42而被支撐。The support structure 34 includes a support stand 38 having a circular opening in a plan view. A ring-shaped frame 23 can be placed on the upper surface of the support base 38 here. A plurality of clamps 40 for fixing the frame 23 are provided on the outer peripheral portion of the support table 38. The support stand 38 is supported by the elevating mechanism 42 for the elevating support structure 34.

升降機構42具備有被固定在下方的基台(圖未示)的汽缸罩殼44、及插入於汽缸罩殼44的活塞桿46。在活塞桿46的上端部固定有支撐台38。升降機構42是藉由將活塞桿46上下地移動而使支撐構造34升降。The lifting mechanism 42 includes a cylinder cover 44 fixed to a base (not shown) below, and a piston rod 46 inserted into the cylinder cover 44. A support base 38 is fixed to the upper end of the piston rod 46. The raising and lowering mechanism 42 raises and lowers the support structure 34 by moving the piston rod 46 up and down.

於支撐台38的開口部配置有擴張滾筒36。擴張滾筒36的內徑(直徑)是比被加工物11的直徑更大。另一方面，擴張滾筒36的外徑(直徑)是形成得比環狀的框架23的內徑(直徑)、或支撐台38的開口部的直徑更小。The expansion roller 36 is arranged in the opening of the support stand 38. The inner diameter (diameter) of the expansion drum 36 is larger than the diameter of the workpiece 11. On the other hand, the outer diameter (diameter) of the expansion drum 36 is formed to be smaller than the inner diameter (diameter) of the ring-shaped frame 23 or the diameter of the opening of the support base 38.

在分割步驟中，首先是如圖5(A)所示，將支撐台38的上表面的高度對準於擴張滾筒36的上端的高度，並於將框架23載置於支撐台38的上表面後，以夾具40將框架23固定。藉此，擴張滾筒36的上端是在被加工物11與框架23之間接觸於片材21。In the dividing step, first, as shown in FIG. 5(A), the height of the upper surface of the support table 38 is aligned with the height of the upper end of the expansion roller 36, and the frame 23 is placed on the upper surface of the support table 38 After that, the frame 23 is fixed with a clamp 40. Thereby, the upper end of the expansion roller 36 is in contact with the sheet 21 between the workpiece 11 and the frame 23.

接著，以升降機構42使支撐構造34下降，以如圖5(B)所示，使支撐台38的上表面移動到比擴張滾筒36的上端更下方。其結果，擴張滾筒36是相對於支撐台38上升，且片材21會被擴張滾筒36上推而以放射狀的形式被擴張。當擴張片材21時，會讓片材21擴張的方向的力(放射狀的力)作用在被加工物11上。藉此，被加工物11會以改質層19c為起點而分割成複數個晶片。Next, the support structure 34 is lowered by the elevating mechanism 42 to move the upper surface of the support table 38 below the upper end of the expansion drum 36 as shown in FIG. 5(B). As a result, the expansion drum 36 rises with respect to the support table 38, and the sheet 21 is pushed up by the expansion drum 36 and expanded in a radial manner. When the sheet 21 is expanded, the force in the direction in which the sheet 21 is expanded (radial force) acts on the workpiece 11. Thereby, the workpiece 11 is divided into a plurality of wafers with the modified layer 19c as a starting point.

又，在上述實施形態中，雖然是在第1保持步驟之前進行片材貼附步驟，但是亦可設成例如在第2保持步驟之前(雷射加工步驟之前)進行片材貼附步驟。In addition, in the above-mentioned embodiment, although the sheet attaching step is performed before the first holding step, for example, the sheet attaching step may be performed before the second holding step (before the laser processing step).

又，於上述實施形態及變形例的雷射加工步驟中，雖然是從被加工物11的背面11b側照射雷射光束，但是也可以從被加工物11的正面11a側來照射雷射光束。再者，在這種情況下，由於會成為在第2保持步驟保持被加工物11的背面11b側之情形，所以在第2保持步驟之前宜將正面11a側之片材21剝下，並於背面11b側黏貼另外的片材(保護構件)等。In the laser processing steps of the above-mentioned embodiment and modification examples, although the laser beam is irradiated from the back surface 11b side of the workpiece 11, the laser beam may be irradiated from the front surface 11a side of the workpiece 11. Furthermore, in this case, since the back surface 11b side of the workpiece 11 is held in the second holding step, it is advisable to peel off the sheet 21 on the front side 11a side before the second holding step. Another sheet (protective member) etc. are stuck on the back side 11b side.

又，在上述之切割步驟中，雖然是從包夾切割刀10的一對噴嘴12來供給切割液14，但對於用於供給切割液14之噴嘴的態樣並無特別的限制。圖6是顯示用於供給切割液14的另外的態樣的噴嘴的側視圖。如圖6所示，變形例的切割單元8，是除了切割刀10及一對噴嘴12以外，還具有配置在切割刀10的前方(或者後方)的噴嘴(噴淋噴嘴)16。In addition, in the above-mentioned cutting step, although the cutting fluid 14 is supplied from the pair of nozzles 12 that clamp the cutting blade 10, there is no particular limitation on the aspect of the nozzles used to supply the cutting fluid 14. FIG. 6 is a side view showing another aspect of the nozzle for supplying the cutting fluid 14. As shown in FIG. 6, the cutting unit 8 of the modified example has a nozzle (shower nozzle) 16 arranged in front of (or behind) the cutting blade 10 in addition to the cutting blade 10 and the pair of nozzles 12.

藉由從此噴嘴16供給切割液14，變得容易對切割溝19a供給切割液14，而成為可以更有效地將積層體17中的金屬改質。特別是如圖6所示，當將噴嘴16的噴射口朝向斜下方(例如切割刀10的加工點附近)時，會對切割溝19a供給、充填大量的切割液14，而可以更有效地將積層體17中的金屬改質，因而較理想。又，在圖6中，雖然是將噴嘴16與一對噴嘴12一起使用，但亦可僅單獨使用噴嘴16。By supplying the cutting fluid 14 from this nozzle 16, it becomes easy to supply the cutting fluid 14 to the cutting groove 19a, and it becomes possible to change the metal in the laminated body 17 more effectively. In particular, as shown in FIG. 6, when the jet nozzle of the nozzle 16 is directed obliquely downward (for example, near the processing point of the cutting knife 10), a large amount of cutting fluid 14 is supplied and filled to the cutting groove 19a, and the cutting fluid 14 can be more effectively The metal in the layered body 17 is modified, so it is preferable. In addition, in FIG. 6, although the nozzle 16 is used together with the pair of nozzles 12, only the nozzle 16 may be used alone.

另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍內，均可適當變更而實施。In addition, the structure, method, etc. of the above-mentioned embodiment can be suitably modified and implemented as long as it does not deviate from the purpose of the present invention.

11‧‧‧被加工物11a‧‧‧正面11b‧‧‧背面13‧‧‧切斷預定線(切割道)15‧‧‧器件17‧‧‧積層體19a‧‧‧切割溝19b‧‧‧截口(切口)19c‧‧‧改質層21‧‧‧片材(保護構件)23‧‧‧框架2‧‧‧切割裝置4‧‧‧工作夾台(第1保持台)4a、24a‧‧‧保持面6、26、40‧‧‧夾具8‧‧‧切割單元10‧‧‧切割刀12‧‧‧噴嘴14‧‧‧切割液16‧‧‧噴嘴(噴淋噴嘴)22‧‧‧雷射加工裝置24‧‧‧工作夾台(第2保持台)28‧‧‧雷射照射單元28a、28b‧‧‧雷射光束32‧‧‧擴張裝置34‧‧‧支撐構造36‧‧‧擴張滾筒38‧‧‧支撐台42‧‧‧升降機構44‧‧‧汽缸罩殼46‧‧‧活塞桿11‧‧‧Working object 11a‧‧‧Front surface 11b‧‧‧Back surface 13‧‧‧Cutting planned line (cutting path) 15‧‧‧Device 17‧‧‧Laminated body 19a‧‧‧Cutting groove 19b‧‧‧ Section (cut) 19c‧‧‧Modified layer 21‧‧‧Sheet (protective member) 23‧‧‧Frame 2‧‧‧Cutting device 4‧‧‧Working clamp table (1st holding table) 4a, 24a‧ ‧‧Retaining surface 6,26,40‧‧‧Jig 8‧‧‧Cutting unit 10‧‧‧Cutting knife 12‧‧‧Nozzle 14‧‧‧Cutting fluid 16‧‧‧Nozzle (spray nozzle) 22‧‧‧ Laser processing device 24‧‧‧Work clamp table (second holding table) 28‧‧‧Laser irradiation unit 28a, 28b‧‧‧Laser beam 32‧‧‧Expansion device 34‧‧‧Support structure 36‧‧‧ Expansion roller 38‧‧‧Support platform 42‧‧‧Lift mechanism 44‧‧‧Cylinder cover 46‧‧‧Piston rod

圖1(A)是示意地顯示被加工物的構成例之立體圖，圖1(B)是用於說明片材貼附步驟之立體圖。 圖2(A)是用於說明第1保持步驟的局部截面側視圖，圖2(B)是用於說明切割步驟的局部截面側視圖。 圖3(A)是用於說明第2保持步驟的局部截面側視圖，圖3(B)是用於說明雷射加工步驟的局部截面側視圖。 圖4是用於說明變形例之雷射加工步驟的局部截面側視圖。 圖5(A)及圖5(B)是用於說明分割步驟的局部截面側視圖。 圖6是顯示用於供給切割液的另外的態樣之噴嘴的側視圖。Fig. 1(A) is a perspective view schematically showing a configuration example of a to-be-processed object, and Fig. 1(B) is a perspective view for explaining a sheet attaching step. Fig. 2(A) is a partial cross-sectional side view for explaining the first holding step, and Fig. 2(B) is a partial cross-sectional side view for explaining the cutting step. Fig. 3(A) is a partial cross-sectional side view for explaining the second holding step, and Fig. 3(B) is a partial cross-sectional side view for explaining the laser processing step. Fig. 4 is a partial cross-sectional side view for explaining a laser processing step of a modification example. 5(A) and 5(B) are partial cross-sectional side views for explaining the dividing step. Fig. 6 is a side view showing another aspect of a nozzle for supplying cutting fluid.

2‧‧‧切割裝置 2‧‧‧Cutting device

4‧‧‧工作夾台(第1保持台) 4‧‧‧Working clamp table (1st holding table)

4a‧‧‧保持面 4a‧‧‧Keep the surface

6‧‧‧夾具 6‧‧‧Fixture

8‧‧‧切割單元 8‧‧‧Cutting unit

10‧‧‧切割刀 10‧‧‧Cutting knife

12‧‧‧噴嘴 12‧‧‧Nozzle

14‧‧‧切割液 14‧‧‧Cutting fluid

11‧‧‧被加工物 11‧‧‧Processed objects

11a‧‧‧正面 11a‧‧‧Front

11b‧‧‧背面 11b‧‧‧Back

13‧‧‧切斷預定線(切割道) 13‧‧‧Cutting the planned line (cutting path)

15‧‧‧器件 15‧‧‧Device

17‧‧‧積層體 17‧‧‧Layered body

19a‧‧‧切割溝 19a‧‧‧Cutting groove

21‧‧‧片材(保護構件) 21‧‧‧Sheet (protective member)

23‧‧‧框架 23‧‧‧Frame

Claims (6)

一種加工方法，是對在正面側具有切斷預定線且在背面側形成有包含金屬之積層體的板狀被加工物進行加工，其中於該正面側包括複數個器件，前述加工方法具備以下步驟：保持步驟，將前述板狀被加工物的該正面側保持在保持台上，以使形成在前述板狀被加工物之該背面側的前述積層體露出；切割步驟，在實施前述保持步驟後，藉由使用切割刀沿著前述切斷預定線切割前述板狀被加工物，而形成將前述積層體斷開的切割溝，且前述板狀被加工物的剩餘區域保留在該切割溝之底部的下方；以及雷射加工步驟，在實施前述切割步驟後，沿著前述切割溝照射雷射光束於前述板狀被加工物，其中該雷射光束在進入前述板狀被加工物之前，會通過前述切割溝，且在前述雷射加工步驟中，前述雷射光束是照射於前述板狀被加工物的該背面側，前述切割步驟包括對前述板狀被加工物供給包含有機酸及氧化劑的切割液，其中，在前述切割步驟中形成之前述切割溝的該底部略低於該積層體的下表面，使得前述切割溝的深度小於被保留在該切割溝之該底部的下方之前述板狀被加工物之該剩餘區域的厚度，其中，前述雷射加工步驟包括沿著前述切割溝照射具有可穿透前述板狀被加工物之波長的雷射光束，而沿著前 述切割溝在前述板狀被加工物內形成改質層，前述加工方法更具備在實施前述雷射加工步驟後沿著前述改質層分割前述板狀被加工物的分割步驟。 A processing method is to process a plate-shaped to-be-processed object having a cutting line on the front side and a laminate containing metal formed on the back side, wherein the front side includes a plurality of devices, and the foregoing processing method includes the following steps : Holding step, holding the front side of the plate-shaped workpiece on a holding table so that the laminate formed on the back side of the plate-shaped workpiece is exposed; cutting step, after performing the holding step , By using a cutting knife to cut the plate-shaped workpiece along the predetermined cutting line to form a cutting groove that separates the laminate, and the remaining area of the plate-shaped workpiece remains at the bottom of the cutting groove And the laser processing step. After the cutting step is performed, the laser beam is irradiated on the plate-shaped workpiece along the cutting groove, wherein the laser beam will pass through before entering the plate-shaped workpiece The cutting groove, and in the laser processing step, the laser beam is irradiated on the back side of the plate-shaped workpiece, and the cutting step includes supplying the plate-shaped workpiece with an organic acid and an oxidizing agent. Liquid, wherein the bottom of the cutting groove formed in the cutting step is slightly lower than the lower surface of the laminate, so that the depth of the cutting groove is smaller than the plate-shaped quilt remaining below the bottom of the cutting groove The thickness of the remaining area of the processed object, wherein the laser processing step includes irradiating a laser beam having a wavelength that can penetrate the plate-shaped processed object along the cutting groove, and along the front The cutting groove forms a modified layer in the plate-shaped to-be-processed object, and the processing method further includes a dividing step of dividing the plate-shaped to-be-processed object along the modified layer after performing the laser processing step. 如請求項1之加工方法，其中前述加工方法更具備片材貼附步驟，該片材貼附步驟是在實施前述雷射加工步驟前，將片材貼附於前述板狀被加工物的該正面側。 Such as the processing method of claim 1, wherein the processing method further includes a sheet attaching step, and the sheet attaching step is to attach a sheet to the plate-shaped workpiece before performing the laser processing step. The front side. 如請求項1之加工方法，其更具備片材貼附步驟，該片材貼附步驟是將保護構件貼附於前述板狀被加工物的該正面側，其中該片材貼附步驟是在該保持步驟前實施。 Such as the processing method of claim 1, further comprising a sheet attaching step, the sheet attaching step is to attach the protective member to the front side of the plate-shaped to-be-processed object, wherein the sheet attaching step is This is carried out before the holding step. 如請求項1之加工方法，其中前述複數個器件各具備有積體電路。 Such as the processing method of claim 1, wherein each of the aforementioned plural devices is provided with an integrated circuit. 如請求項1之加工方法，其中前述積層體是形成於整個該板狀被加工物的該背面上。 The processing method of claim 1, wherein the laminate is formed on the entire back surface of the plate-shaped workpiece. 一種加工方法，是對在正面側具有切斷預定線且在背面側形成有包含金屬之積層體的板狀被加工物進行加工，其中於該正面側包括複數個器件，前述加工方法具備以下步驟：保持步驟，將前述板狀被加工物的該正面側保持在保持台上，以使形成在前述板狀被加工物之該背面側的前述積層體露出；切割步驟，在實施前述保持步驟後，藉由使用切割刀沿著前述切斷預定線切割前述板狀被加工物，而形成將前 述積層體斷開的切割溝，且前述板狀被加工物的剩餘區域保留在該切割溝之底部的下方；以及雷射加工步驟，在實施前述切割步驟後，沿著前述切割溝照射雷射光束於前述板狀被加工物，其中該雷射光束在進入前述板狀被加工物之前，會通過前述切割溝，且在前述雷射加工步驟中，前述雷射光束是照射於前述板狀被加工物的該背面側，前述切割步驟包括對前述板狀被加工物供給包含有機酸及氧化劑的切割液，其中，在前述切割步驟中形成之前述切割溝的該底部略低於該積層體的下表面，使得前述切割溝的深度小於被保留在該切割溝之該底部的下方之前述板狀被加工物之該剩餘區域的厚度，其中，在前述雷射加工步驟中，是沿著前述切割溝照射具有可被前述板狀被加工物吸收之波長的前述雷射光束，而沿著前述切割溝將前述板狀被加工物切斷。A processing method is to process a plate-shaped to-be-processed object having a cutting line on the front side and a laminate containing metal formed on the back side, wherein the front side includes a plurality of devices, and the foregoing processing method includes the following steps : Holding step, holding the front side of the plate-shaped workpiece on a holding table so that the laminate formed on the back side of the plate-shaped workpiece is exposed; cutting step, after performing the holding step , By using a cutting knife to cut the plate-shaped workpiece along the planned cutting line to form the front The cutting groove of the laminated body is broken, and the remaining area of the plate-shaped to-be-processed object remains below the bottom of the cutting groove; and the laser processing step, after the cutting step is performed, the laser is irradiated along the cutting groove Before entering the plate-shaped object, the laser beam passes through the cutting groove, and in the laser processing step, the laser beam is irradiated on the plate-shaped object. On the back side of the workpiece, the cutting step includes supplying a cutting fluid containing an organic acid and an oxidizing agent to the plate-shaped workpiece, wherein the bottom of the cutting groove formed in the cutting step is slightly lower than that of the laminate. The lower surface is such that the depth of the cutting groove is smaller than the thickness of the remaining area of the plate-shaped workpiece remaining under the bottom of the cutting groove, wherein, in the laser processing step, the cutting groove The groove is irradiated with the laser beam having a wavelength that can be absorbed by the plate-shaped object, and the plate-shaped object is cut along the cutting groove.
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