TWI731348B - Diode laser configuration - Google Patents

Diode laser configuration Download PDF

Info

Publication number
TWI731348B
TWI731348B TW108121733A TW108121733A TWI731348B TW I731348 B TWI731348 B TW I731348B TW 108121733 A TW108121733 A TW 108121733A TW 108121733 A TW108121733 A TW 108121733A TW I731348 B TWI731348 B TW I731348B
Authority
TW
Taiwan
Prior art keywords
diode laser
heat sink
heat
section
laser device
Prior art date
Application number
TW108121733A
Other languages
Chinese (zh)
Other versions
TW202002438A (en
Inventor
史蒂芬 史崔梅爾
珊克 雅恩 海克 米瑟納
傑拉德 厄本
杰德 韓森
克里斯汀 卡斯坦
Original Assignee
美商創浦光子學股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商創浦光子學股份有限公司 filed Critical 美商創浦光子學股份有限公司
Publication of TW202002438A publication Critical patent/TW202002438A/en
Application granted granted Critical
Publication of TWI731348B publication Critical patent/TWI731348B/en

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031Edge-emitting structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • H01S5/02385Positioning of the laser chips using laser light as reference
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/023Mount members, e.g. sub-mount members
    • H01S5/02315Support members, e.g. bases or carriers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0233Mounting configuration of laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02407Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423Liquid cooling, e.g. a liquid cools a mount of the laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
    • H01S5/02484Sapphire or diamond heat spreaders
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/40Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025Array arrangements, e.g. constituted by discrete laser diodes or laser bar

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

本發明係有關於一種二極體雷射器配置(1),具有:二極體雷射裝置(3),及至少一個散熱裝置(5,5',5''),其中該二極體雷射裝置(3)至少部分地佈置在該至少一個散熱裝置(5,5',5'')上,其中該二極體雷射裝置(3)被構建為用於透過發射面(9)發射雷射束,其中該至少一個散熱裝置(5,5',5'')被構建為用於從該二極體雷射裝置(3)排出熱量。根據本發明,該至少一個散熱裝置(5,5',5'')具有正面(13),該正面與該發射面(9)位於該二極體雷射器配置(1)的同一側上,該至少一個散熱裝置至少在該正面上具有至少一個第一端面區段(15,15',15'',15''',15''''),其相對該發射面(9)而言傾斜定向。The present invention relates to a diode laser configuration (1), which has: a diode laser device (3), and at least one heat sink (5, 5', 5"), wherein the diode The laser device (3) is at least partially arranged on the at least one heat dissipation device (5, 5', 5''), wherein the diode laser device (3) is configured to pass through the emitting surface (9) A laser beam is emitted, wherein the at least one heat dissipating device (5, 5', 5") is constructed for dissipating heat from the diode laser device (3). According to the present invention, the at least one heat sink (5, 5', 5'') has a front face (13), and the front face and the emitting face (9) are located on the same side of the diode laser configuration (1) , The at least one heat dissipating device has at least one first end surface section (15, 15', 15", 15"', 15"") on at least the front surface, which is opposite to the emitting surface (9) Language oblique orientation.

Description

二極體雷射器配置Diode laser configuration

本發明係有關於一種二極體雷射器配置。The present invention relates to a diode laser configuration.

當具有一個或數個特別是大功率範圍之發射器(例如大功率二極體雷射條)的二極體雷射裝置工作時,會產生損耗熱,為了在確保二極體雷射裝置的長使用壽命及高射束品質的同時達到高輸出功率,必須排出損耗熱。因此,一般而言,具有此種二極體雷射裝置之二極體雷射器配置具有散熱裝置,該散熱裝置與二極體雷射裝置熱耦合且被構建為用於排出損耗熱。此種散熱裝置通常具有散熱器及佈置於其上的熱沉。習知散熱器特定言之被構建為用於對熱源(如二極體雷射裝置)的熱量進行均勻分佈以及/或者透過較小的面進行吸收並傳遞至較大的面,從而增強散熱效果。此類散熱器通常具有較高的導熱能力及與二極體雷射裝置相匹配的熱膨脹係數。用來將熱量例如排出至二極體雷射器配置周圍的熱沉通常佈置在散熱器之背離二極體雷射器配置的較大面上。When a diode laser device with one or several transmitters with a high power range (such as a high-power diode laser bar) is working, it will generate heat loss. In order to ensure the efficiency of the diode laser device To achieve high output power with long service life and high beam quality, loss of heat must be dissipated. Therefore, generally speaking, the configuration of a diode laser with such a diode laser device has a heat dissipation device, which is thermally coupled with the diode laser device and is configured to dissipate heat loss. Such a heat dissipation device usually has a radiator and a heat sink arranged on it. The conventional heat sink is specifically constructed to evenly distribute the heat of the heat source (such as a diode laser device) and/or absorb it through a smaller surface and transfer it to a larger surface, thereby enhancing the heat dissipation effect . This type of heat sink usually has a high thermal conductivity and a thermal expansion coefficient matching the diode laser device. The heat sink used to dissipate heat, for example, to the periphery of the diode laser configuration is usually arranged on the larger surface of the heat sink facing away from the diode laser configuration.

習知結構的散熱裝置側向伸出二極體雷射器配置的基面,從而增強散熱效果。散熱裝置的正面與二極體雷射裝置之用來發射雷射束的發射面處於二極體雷射器配置的同一側上,在該正面上,二極體雷射裝置通常不伸出該基面。如此便會產生以下問題:雷射束至少部分地被伸出基面的散熱裝置遮蔽。此種遮蔽特別是會出現在發射之雷射束的擴張角較大的情況下。除了阻礙雷射束傳播外,此種遮蔽還可能造成散熱裝置進一步升溫。如此便可能使得散熱裝置之沈積在發射面上的材料蒸發,從而造成二極體雷射裝置受損。因而在通常情況下,二極體雷射器配置之彼此堆疊的組件,如二極體雷射裝置、散熱器及熱沉,在發射雷射束的一側上大體上形成一塊體。此外,通常使得散熱器及/或熱沉以更小幅度伸出二極體雷射裝置,以免在發射面的區域內,雷射束被二極體雷射裝置之與散熱器或熱沉的焊接連接的突出焊疤遮蔽。散熱器或熱沉之位於該正面上的端面大體垂直於雷射束的輻射方向。但如此會特別是在發射面的區域內對二極體雷射裝置之損耗熱的排出造成限制,從而例如會降低二極體雷射裝置的最大輸出功率。The heat dissipation device of the conventional structure extends laterally from the base surface of the diode laser configuration, thereby enhancing the heat dissipation effect. The front of the heat sink and the emitting surface of the diode laser device for emitting laser beams are on the same side of the diode laser configuration. On the front face, the diode laser device usually does not extend out of the laser beam. Base surface. This will cause the following problem: the laser beam is at least partially shielded by the heat sink protruding from the base surface. This kind of occlusion occurs especially when the divergence angle of the launched laser beam is large. In addition to impeding the propagation of the laser beam, such shielding may also cause the heat sink to heat up further. In this way, the material deposited on the emitting surface of the heat sink may evaporate, thereby causing damage to the diode laser device. Therefore, under normal circumstances, the stacked components of a diode laser configuration, such as a diode laser device, a heat sink, and a heat sink, generally form a block on the side where the laser beam is emitted. In addition, the radiator and/or heat sink are usually made to extend out of the diode laser device by a smaller margin, so as to prevent the laser beam from being interfered by the diode laser device and the radiator or heat sink in the area of the emitting surface. The protruding welding scar of the welding connection is shielded. The end surface of the radiator or heat sink on the front surface is substantially perpendicular to the radiation direction of the laser beam. However, this will limit the dissipation of the heat loss of the diode laser device, especially in the area of the emitting surface, thereby reducing the maximum output power of the diode laser device, for example.

本發明之目的在於提供一種二極體雷射器配置,其中前述缺點不會出現。The purpose of the present invention is to provide a diode laser configuration in which the aforementioned shortcomings do not occur.

該目的係藉由提供請求項1之主題而達成。有利技術方案產生於附屬請求項。This purpose is achieved by providing the subject of claim 1. Favorable technical solutions are generated from subsidiary claims.

特定言之,本發明用以達成該目的之解決方案為提供一種二極體雷射器配置,其具有二極體雷射裝置及至少一個散熱裝置。該二極體雷射裝置至少部分地佈置在該至少一個散熱裝置上。該二極體雷射裝置被構建為用於透過發射面發射雷射束。其中,該雷射束亦可由數個分雷射束組成。該至少一個散熱裝置被構建為用於從該二極體雷射裝置排出熱量。該至少一個散熱裝置具有正面,該正面與該發射面位於該二極體雷射器配置的同一側上,該至少一個散熱裝置至少在該正面上具有至少一個第一端面區段,其相對該發射面而言傾斜定向。In particular, the solution of the present invention to achieve this objective is to provide a diode laser configuration, which has a diode laser device and at least one heat dissipation device. The diode laser device is at least partially arranged on the at least one heat dissipation device. The diode laser device is constructed to emit a laser beam through the emitting surface. Among them, the laser beam can also be composed of several sub-laser beams. The at least one heat dissipation device is configured to dissipate heat from the diode laser device. The at least one heat dissipation device has a front face, the front face and the emitting surface are located on the same side of the diode laser configuration, and the at least one heat dissipation device has at least one first end face section on at least the front face, which is opposite to the The emitting surface is oriented obliquely.

本發明較之先前技術具有其優勢。該至少一個散熱裝置至少在該正面上具有至少一個相對該發射面而言傾斜定向的第一端面區段,如此便能在二極體雷射裝置之發射雷射束的發射側的區域內顯著增強損耗熱排出,從而大幅減輕二極體雷射裝置在其工作過程中的升溫。特定言之,一個或數個發射器的升溫有所降低。此外還在低水平上實現了二極體雷射裝置中的均勻溫度分佈。如此便能大幅增強二極體雷射裝置的輸出功率。此外還能例如在擴張角及偏振方面實現更佳的射束參數。還能減輕波長漂移。此外還能減小發射輻射的頻譜帶寬。總體而言能夠在電流相等或增大的情況下大幅增強二極體雷射裝置的輸出功率。此外還能改善二極體雷射裝置的使用壽命及/或射束品質。Compared with the prior art, the present invention has its advantages. The at least one heat dissipating device has at least one first end surface section oriented obliquely with respect to the emitting surface on the front surface at least, so that it can be prominent in the area of the emitting side of the diode laser device that emits the laser beam Enhance the dissipation of heat loss, thereby greatly reducing the heating of the diode laser device during its working process. In particular, the temperature rise of one or several transmitters is reduced. In addition, the uniform temperature distribution in the diode laser device is realized at a low level. In this way, the output power of the diode laser device can be greatly enhanced. In addition, better beam parameters can be achieved, for example, in terms of divergence angle and polarization. It can also reduce wavelength drift. In addition, the spectrum bandwidth of the emitted radiation can be reduced. In general, the output power of the diode laser device can be greatly enhanced when the current is equal or increased. In addition, the service life and/or beam quality of the diode laser device can be improved.

二極體雷射裝置較佳具有至少一個發射器,特別是單發射器。此種發射器較佳被構建為邊緣發射器。此種發射器較佳被構建為大功率發射器。二極體雷射裝置尤佳具有數個發射器,其中二極體雷射裝置特定言之被構建為包含數個發射器之二極體雷射條,該等發射器較佳佈置在一維行列(陣列)中。此種二極體雷射條較佳被構建為邊緣發射器。此種二極體雷射條尤佳被構建為大功率二極體雷射條。The diode laser device preferably has at least one emitter, especially a single emitter. Such a transmitter is preferably constructed as an edge transmitter. Such a transmitter is preferably constructed as a high-power transmitter. The diode laser device preferably has several emitters. The diode laser device is specifically constructed as a diode laser bar containing several emitters. The emitters are preferably arranged in one dimension. In rows and columns (array). Such a diode laser bar is preferably constructed as an edge emitter. This type of diode laser bar is preferably constructed as a high-power diode laser bar.

該二極體雷射裝置較佳至少部分地佈置在該至少一個散熱裝置上,特別是該至少一個散熱裝置的某個區段上。The diode laser device is preferably at least partially arranged on the at least one heat dissipation device, especially on a certain section of the at least one heat dissipation device.

該發射面較佳呈平面狀。該發射面特別是佈置在二極體雷射裝置的發射側上。此外,特別是該至少一個散熱裝置的正面與二極體雷射裝置的發射側佈置在本發明之二極體雷射器配置的同一側上。因此,該至少一個第一端面區段與發射面佈置在二極體雷射器配置的同一側上。The emitting surface is preferably flat. The emitting surface is arranged in particular on the emitting side of the diode laser device. In addition, in particular, the front surface of the at least one heat sink and the emitting side of the diode laser device are arranged on the same side of the diode laser configuration of the present invention. Therefore, the at least one first end face section is arranged on the same side of the diode laser configuration as the emitting face.

該至少一個第一端面區段較佳呈平面狀。該至少一個第一端面區段亦可-至少在剖面平面內-呈凹形或凸形。The at least one first end surface section is preferably flat. The at least one first end face section may also-at least in the cross-sectional plane-be concave or convex.

該至少一個第一端面區段的表面法線較佳朝雷射束的雷射束軸傾斜。較佳地,該至少一個第一端面區段在其相對發射面的傾斜度方面係根據雷射束的輻射特性,特別是根據擴張角,而有所調整。The surface normal of the at least one first end face section is preferably inclined toward the laser beam axis of the laser beam. Preferably, the inclination of the at least one first end face section relative to the emitting surface is adjusted according to the radiation characteristics of the laser beam, especially according to the expansion angle.

在本發明之二極體雷射器配置的一種較佳實施方式中,該至少一個散熱裝置至少在該正面上具有數個第一端面區段。該等第一端面區段特別是相互鄰接。特定言之,該等數個第一端面區段形成一個連貫的面。特定言之,該等數個第一端面區段皆相對該發射面而言傾斜定向,其中該等數個第一端面區段與該發射面間的角度可各不相同。在數個第一端面區段相連的情況下,該等角度較佳具有遞增或遞減之大小。該等相連之數個第一端面區段尤佳-至少在剖面平面內視之-大體呈凹形或凸形的結構。In a preferred embodiment of the diode laser configuration of the present invention, the at least one heat dissipation device has at least a plurality of first end face sections on the front surface. In particular, the first end face sections adjoin each other. In particular, the plurality of first end surface sections form a continuous surface. In particular, the plurality of first end surface sections are all oriented obliquely with respect to the emitting surface, and the angles between the plurality of first end surface sections and the emitting surface may be different from each other. In the case where a plurality of first end face sections are connected, the angles preferably have an increasing or decreasing magnitude. The connected first end face sections are particularly preferably-at least viewed in the cross-sectional plane-generally in a concave or convex structure.

在本發明之二極體雷射器配置的一種替代實施方式中,該至少一個第一端面區段-至少在剖面平面內視之-呈凹形。特定言之,該至少一個第一端面區段形成圓柱面部段之內側的一個區段。In an alternative embodiment of the diode laser configuration of the present invention, the at least one first end face section-at least when viewed in the cross-sectional plane-is concave. In particular, the at least one first end face section forms a section inside the cylindrical face section.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個第一端面區段的表面法線與該發射面的表面法線間的角度大於0度且小於90度。特定言之,該至少一個第一端面區段的所有局部表面法線與該發射面的表面法線間的相應角度大於0度且小於90度。如此便能確保雷射束的順利發射,從而顯著增強損耗熱排出。A preferred embodiment of the diode laser configuration is characterized in that the angle between the surface normal of the at least one first end surface section and the surface normal of the emitting surface is greater than 0 degrees and less than 90 degrees. In particular, the corresponding angles between all local surface normals of the at least one first end surface section and the surface normal of the emitting surface are greater than 0 degrees and less than 90 degrees. In this way, the smooth emission of the laser beam can be ensured, thereby significantly enhancing the dissipation of the lost heat.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個第一端面區段的表面法線與該發射面的表面法線間的角度為至少40度,最大為60度,較佳為50度。此種技術方案在確保雷射束順利發射的同時特別有利於有效的損耗熱排出。A preferred embodiment of the diode laser configuration is characterized in that the angle between the surface normal of the at least one first end face section and the surface normal of the emitting surface is at least 40 degrees, and the maximum is 60 degrees. Degree, preferably 50 degrees. This technical solution is particularly beneficial to effective dissipation of heat loss while ensuring the smooth emission of the laser beam.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該二極體雷射裝置在該發射面的區域內相對該至少一個散熱裝置的最前端而言凹進佈置。該至少一個散熱裝置的最前端尤指某個區域,其相對沿雷射束軸延伸的座標軸而言距離發射面最遠。亦即,該至少一個散熱裝置特別是在該正面上伸出二極體雷射裝置的基面。特定言之,該二極體雷射裝置與該至少一個散熱裝置間的接觸區域至少部分地被二極體雷射裝置的基面限制。如此便能特別是相對二極體雷射裝置而言顯著增大該至少一個散熱裝置的尺寸,從而利用有所增大的冷卻面來實現非常有效的損耗熱排出。A preferred embodiment of the configuration of the diode laser is characterized in that the diode laser device is recessed in the region of the emitting surface relative to the foremost end of the at least one heat sink. The foremost end of the at least one heat dissipating device especially refers to a certain area, which is the farthest from the emitting surface relative to the coordinate axis extending along the laser beam axis. That is, the at least one heat dissipating device extends out of the base surface of the diode laser device especially on the front surface. Specifically, the contact area between the diode laser device and the at least one heat sink is at least partially limited by the base surface of the diode laser device. In this way, the size of the at least one heat dissipating device can be significantly increased, especially compared with the diode laser device, so that the enlarged cooling surface can be used to realize very effective dissipation of heat loss.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置在該正面上具有平行於該發射面的至少一個第二端面區段。該至少一個第二端面區段較佳呈平面狀。A preferred embodiment of the diode laser configuration is characterized in that the at least one heat dissipation device has at least one second end surface section parallel to the emitting surface on the front surface. The at least one second end surface section is preferably flat.

在該二極體雷射器配置的一種較佳實施方式中,該至少一個第二端面區段佈置在該至少一個第一端面區段與該發射面之間。如此便能確保特別是在擴張角較大的情況下,雷射束的輻射不會被阻礙。In a preferred embodiment of the diode laser configuration, the at least one second end surface section is arranged between the at least one first end surface section and the emitting surface. In this way, it can be ensured that the radiation of the laser beam will not be hindered, especially when the expansion angle is large.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個第一端面區段或該至少一個第二端面區段齊平地鄰接該發射面。A preferred embodiment of the diode laser configuration is characterized in that the at least one first end surface section or the at least one second end surface section is flush with the emitting surface.

尤佳地,該至少一個第一端面區段及該至少一個第二端面區段齊平地鄰接該發射面。此種方案例如出現在以下情形下:該至少一個第一端面區段是該二極體雷射裝置之第一側上的第一散熱裝置的一部分,該至少一個第二端面區段是該二極體雷射裝置之相反於第一側佈置的第二側上的第二散熱裝置的一部分。例如在該二極體雷射裝置的第一側上佈置有該二極體雷射裝置的基面,其中在該第二側上佈置有二極體雷射裝置之相反於基面之特別是平行於該基面的表面。替代地,二極體雷射裝置的基面亦可佈置在該二極體雷射裝置的第二側上。Preferably, the at least one first end surface section and the at least one second end surface section are flush with the emitting surface. Such a solution occurs, for example, in the following situation: the at least one first end surface section is a part of the first heat dissipation device on the first side of the diode laser device, and the at least one second end surface section is the two The polar laser device is a part of the second heat dissipation device on the second side arranged opposite to the first side. For example, the base surface of the diode laser device is arranged on the first side of the diode laser device, wherein the diode laser device is arranged on the second side opposite to the base surface, especially The surface parallel to the base surface. Alternatively, the base surface of the diode laser device can also be arranged on the second side of the diode laser device.

齊平地鄰接尤指以下情況:該至少一個第一端面區段及/或該至少一個第二端面區段藉其邊緣貼靠在發射面上。亦即,該至少一個第一端面區段及/或該至少一個第二端面區的邊緣特別是貼靠在發射面的邊緣上,例如貼靠在發射面之貼靠在二極體雷射裝置與該至少一個散熱裝置間的接觸區域上的邊緣上。透過此種技術方案便能至少部分地防止雷射束被遮蔽,同時還能確保有效散熱。The flush abutment particularly refers to the following situation: the at least one first end surface section and/or the at least one second end surface section abuts against the emitting surface by its edges. That is, the edge of the at least one first end surface section and/or the at least one second end surface area in particular abuts against the edge of the emitting surface, for example against the emitting surface and abuts against the diode laser device On the edge of the contact area with the at least one heat sink. Through this technical solution, the laser beam can be at least partially prevented from being shielded, and at the same time, effective heat dissipation can be ensured.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置具有對應於該至少一個第一端面區段之側向至少部分環繞的斜面區段。較佳地,該至少一個端面區段側向過渡為該斜面區段。該至少一個端面區段特別是側向地在該斜面區段中延續。該斜面區段亦可具有數個分區段。特定言之,該至少一個散熱裝置以該至少一個第一端面區段在該發射側上並且以該斜面區段在至少另一側上伸出該二極體雷射裝置的基面。尤佳地,該至少一個散熱裝置以該至少一個第一端面區段及該斜面區段在所有側上伸出該二極體雷射裝置的基面。該至少一個第一端面區段及該斜面區特別是圍繞該二極體雷射裝置的基面。該斜面區段的斜度或倒角較佳對應於該至少一個第一端面區段的斜度或倒角。如此便能在所有側上非常有效地進行散熱。A preferred embodiment of the diode laser configuration is characterized in that the at least one heat dissipation device has an inclined plane section corresponding to the at least one first end section at least partially surrounding the side. Preferably, the at least one end surface section transitions laterally into the inclined surface section. The at least one end face section continues in the bevel section in particular laterally. The slope section can also have several partitions. In particular, the at least one heat dissipation device protrudes from the base surface of the diode laser device with the at least one first end surface section on the emitting side and the inclined plane section on at least the other side. Preferably, the at least one heat dissipation device protrudes from the base surface of the diode laser device on all sides with the at least one first end surface section and the inclined surface section. The at least one first end surface section and the inclined surface area particularly surround the base surface of the diode laser device. The slope or chamfer of the inclined surface section preferably corresponds to the slope or chamfer of the at least one first end surface section. In this way, heat can be dissipated very efficiently on all sides.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置至少部分地具有包含金剛石含量的材料或者由包含金剛石含量的材料構成。尤佳地,該至少一個散熱裝置至少部分地具有金剛石-銀複合材料或者由金剛石-銀複合材料構成。尤佳地,下文將予描述類型之散熱器具有包含金剛石含量的材料,較佳金剛石-銀複合材料,或者由包含金剛石含量的材料,較佳金剛石-銀複合材料,構成。A preferred embodiment of the configuration of the diode laser is characterized in that the at least one heat dissipation device at least partly has a material containing diamond content or is composed of a material containing diamond content. Preferably, the at least one heat dissipation device at least partially has a diamond-silver composite material or is composed of a diamond-silver composite material. Preferably, the heat sink of the type described below has a material containing diamond content, preferably a diamond-silver composite material, or is composed of a material containing diamond content, preferably a diamond-silver composite material.

作為替代或補充方案,該至少一個散熱裝置,特別是下文將予描述類型之散熱器,至少部分地具有某種材料或者由某種材料構成,其選自由以下構成之群組:包含金含量的材料、包含銅或碳含量的材料,及奈米材料。此類材料具有極佳的導熱能力。較佳地,藉由此等材料來使得該至少一個散熱裝置,特別是下文將予描述類型之散熱器,的熱膨脹係數至少部分地匹配於二極體雷射裝置的熱膨脹係數。舉例而言,該至少一個散熱裝置的熱膨脹係數至少部分地至少為該二極體雷射裝置的熱膨脹係數的70%,最大為該二極體雷射裝置的熱膨脹係數的130%。如此便能減輕或避免二極體雷射裝置中之特別是溫度相關的應力,從而確保二極體雷射裝置的長期穩定性。As an alternative or in addition, the at least one heat sink, especially a heat sink of the type described below, at least partly has a certain material or is composed of a certain material, which is selected from the group consisting of: containing gold content Materials, materials containing copper or carbon content, and nanomaterials. Such materials have excellent thermal conductivity. Preferably, the thermal expansion coefficient of the at least one heat dissipation device, especially the type of heat sink described below, is at least partially matched with the thermal expansion coefficient of the diode laser device by using such materials. For example, the thermal expansion coefficient of the at least one heat dissipation device is at least partially at least 70% of the thermal expansion coefficient of the diode laser device, and at most 130% of the thermal expansion coefficient of the diode laser device. In this way, the temperature-related stress in the diode laser device can be reduced or avoided, thereby ensuring the long-term stability of the diode laser device.

較佳地,該至少一個散熱裝置的該至少一個第一端面區段及/或該至少一個第二端面區段的輪廓或形狀係藉由燒結或雷射加工而實現。透過該等方法便能特別是加工上述類型之包含金剛石含量的材料。例如可藉由超短脈衝雷射器採用相應的聚焦或調節雷射束透入深度,來透過材料移除將數個微量級(Mikrostufe)置入該至少一個散熱裝置,該等微量級形成此種類型之輪廓或形狀。替代地,可藉由適宜之蝕刻法,如氬蝕刻法或離子束蝕刻法來實現相應的材料移除。可透過使用施加於該至少一個散熱裝置的表面上的相應模子來實現適宜的形狀。Preferably, the contour or shape of the at least one first end surface section and/or the at least one second end surface section of the at least one heat dissipation device is realized by sintering or laser processing. Through these methods, it is particularly possible to process the above-mentioned types of materials containing diamond content. For example, by using an ultrashort pulse laser to focus or adjust the penetration depth of the laser beam, a number of micro-levels (Mikrostufe) can be placed in the at least one heat sink through material removal, and the micro-levels form this Various types of outlines or shapes. Alternatively, a suitable etching method, such as an argon etching method or an ion beam etching method, can be used to achieve the corresponding material removal. The appropriate shape can be achieved by using a corresponding mold applied to the surface of the at least one heat sink.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置具有散熱器或熱沉,尤佳具有散熱器及熱沉。上述類型之散熱器特別是用於熱分佈及用於補償二極體雷射裝置與熱沉的不同熱膨脹。該二極體雷射裝置通常佈置在此種散熱器上。該熱沉特別是藉由冷卻流體而可冷卻。較佳地,該熱沉直至該散熱器及/或該二極體雷射裝置呈薄壁狀,如此便能儘可能緊挨二極體雷射裝置地導引冷卻流體,從而增強散熱效果。較佳地,該熱沉具有導引該冷卻流體的冷卻通道,在該冷卻通道中,在某個緊挨二極體雷射裝置的區域內佈置有若干冷卻翅片。A preferred embodiment of the configuration of the diode laser is characterized in that the at least one heat dissipation device has a heat sink or a heat sink, preferably a heat sink and a heat sink. The above-mentioned type of heat sink is especially used for heat distribution and for compensating the different thermal expansion of the diode laser device and the heat sink. The diode laser device is usually arranged on such a radiator. The heat sink can be cooled especially by means of a cooling fluid. Preferably, the heat sink is thin-walled until the heat sink and/or the diode laser device, so that the cooling fluid can be guided as close to the diode laser device as possible, thereby enhancing the heat dissipation effect. Preferably, the heat sink has a cooling channel for guiding the cooling fluid, and in the cooling channel, a plurality of cooling fins are arranged in an area close to the diode laser device.

該至少一個散熱裝置尤佳具有上述類型之散熱器及熱沉,其中特別是該散熱器佈置在該二極體雷射裝置與該熱沉之間。The at least one heat dissipating device preferably has a heat sink and a heat sink of the above-mentioned type, and in particular, the heat sink is arranged between the diode laser device and the heat sink.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該散熱器或該熱沉,較佳該散熱器及該熱沉,分別具有該至少一個第一端面區段或該至少一個第二端面區段,尤佳具有該至少一個第一端面區段及該至少一個第二端面區段。此種技術方案在進行有效散熱的同時,即使在擴張角較大的情況下亦能確保雷射束的順利發射。A preferred embodiment of the diode laser configuration is characterized in that the heat sink or the heat sink, preferably the heat sink and the heat sink, respectively have the at least one first end surface section or the at least A second end surface section preferably has the at least one first end surface section and the at least one second end surface section. This technical solution can ensure the smooth launch of the laser beam even when the expansion angle is relatively large while performing effective heat dissipation.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置具有散熱器及熱沉,其中該二極體雷射裝置在該發射面的區域內相對該散熱器的最前端而言凹進佈置,且其中該散熱器在該最前端上相對該熱沉的最前端而言凹進佈置。上述類型之最前端尤指散熱器或熱沉的某個區域,其相對沿雷射束軸延伸的座標軸而言距離發射面最遠。此種佈置方案在進行有效散熱的同時,即使在擴張角較大的情況下亦能確保雷射束的順利發射。A preferred embodiment of the configuration of the diode laser is characterized in that: the at least one heat dissipation device has a heat sink and a heat sink, wherein the diode laser device is opposite to the heat sink in the region of the emitting surface The foremost end of the heat sink is recessed, and the heat sink is recessed on the foremost end relative to the foremost end of the heat sink. The foremost end of the above-mentioned type especially refers to a certain area of the radiator or heat sink, which is the farthest from the emitting surface relative to the coordinate axis extending along the laser beam axis. This arrangement can ensure the smooth launch of the laser beam even when the expansion angle is large while effective heat dissipation.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該散熱器的該至少一個第一端面區段或該散熱器的該至少一個第二端面區段,或者替代地該散熱器的該至少一個第一端面區段及該散熱器的該至少一個第二端面區段,齊平地鄰接該熱沉的該至少一個第一端面區段或該熱沉的該至少一個第二端面區段,或者替代地鄰接該熱沉的該至少一個第一端面區段及該熱沉的該至少一個第二端面區段。上述類型之齊平地鄰接尤指以下情況:該第一及/或第二端面區段藉其邊緣相互貼靠在一起。尤佳地,該散熱器及/或該熱沉的第一及/或第二端面區段形成一個連貫的面。二極體雷射器配置的此種技術方案確保了損耗熱的有效排出,而不影響雷射束的發射。A preferred embodiment of the diode laser configuration is characterized in that: the at least one first end face section of the heat sink or the at least one second end face section of the heat sink, or alternatively the heat dissipation The at least one first end surface section of the heat sink and the at least one second end surface section of the heat sink flushly abut the at least one first end surface section of the heat sink or the at least one second end surface of the heat sink Section, or alternatively adjacent to the at least one first end section of the heat sink and the at least one second end section of the heat sink. The above-mentioned type of flush abutment particularly refers to the following situations: the first and/or second end face sections are abutted against each other by their edges. Preferably, the first and/or second end surface sections of the heat sink and/or the heat sink form a continuous surface. This technical solution of the configuration of the diode laser ensures the effective discharge of the loss heat without affecting the emission of the laser beam.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該二極體雷射裝置與該至少一個散熱裝置,特別是上述類型之散熱器或熱沉,間的連接係藉由焊接、黏合、嚙合、卡合或燒結而建立。作為替代或補充方案,該至少一個散熱裝置之該散熱器與該熱沉間的連接較佳藉由焊接、黏合、嚙合、卡合或燒結而建立。特定言之,上述類型之連接係形狀配合及/或材料接合地實現。該等連接易於建立且成本較低。A preferred embodiment of the configuration of the diode laser is characterized in that the connection between the diode laser device and the at least one heat sink, especially the above-mentioned type of heat sink or heat sink, is by Established by welding, bonding, meshing, snapping or sintering. As an alternative or supplementary solution, the connection between the heat sink and the heat sink of the at least one heat sink is preferably established by welding, bonding, meshing, engaging, or sintering. In particular, the above-mentioned type of connection is realized by form-fitting and/or material bonding. These connections are easy to establish and low cost.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該至少一個散熱裝置被構建為用於對該二極體雷射裝置進行電接觸。尤佳地,本發明之二極體雷射器配置具有兩個上述類型之散熱裝置,其分別對該二極體雷射裝置進行電接觸。如此便能結合能量源來對二極體雷射裝置進行供電。A preferred embodiment of the configuration of the diode laser is characterized in that the at least one heat dissipation device is configured to make electrical contact with the diode laser device. More preferably, the diode laser configuration of the present invention has two heat dissipation devices of the above-mentioned type, which respectively make electrical contact with the diode laser device. In this way, the energy source can be combined to power the diode laser device.

該二極體雷射器配置之一種較佳實施方式,其特徵在於:該二極體雷射器配置具有兩個上述類型之散熱裝置,其中該二散熱裝置的第一散熱裝置佈置在該二極體雷射裝置的第一側上,且其中該二散熱裝置的第二散熱裝置佈置在該二極體雷射裝置之相反於該第一側的第二側上。A preferred embodiment of the diode laser configuration is characterized in that: the diode laser configuration has two heat dissipation devices of the above-mentioned type, wherein the first heat dissipation device of the two heat dissipation devices is arranged in the second heat dissipation device. On the first side of the polar laser device, and wherein the second heat dissipation device of the two heat dissipation devices is arranged on the second side of the diode laser device opposite to the first side.

較佳地,該第一散熱裝置構建為散熱器,其具有佈置在背離二極體雷射裝置的一側上的熱沉,其中該第二散熱裝置構建為另一熱沉。Preferably, the first heat dissipation device is constructed as a heat sink, which has a heat sink arranged on a side away from the diode laser device, wherein the second heat dissipation device is constructed as another heat sink.

替代地,該第一散熱裝置較佳構建為散熱器,其具有佈置在背離二極體雷射裝置的一側上的熱沉,其中該第二散熱裝置構建為另一散熱器,其具有佈置在背離二極體雷射裝置的一側上的另一熱沉。Alternatively, the first heat sink is preferably constructed as a heat sink with a heat sink arranged on the side facing away from the diode laser device, wherein the second heat sink is constructed as another heat sink with an arrangement Another heat sink on the side facing away from the diode laser device.

圖1以透視斜視圖示意性示出二極體雷射器配置1之第一實施例。二極體雷射器配置1具有二極體雷射裝置3。在圖1所示實施例中,二極體雷射裝置3例示性地呈方形。該二極體雷射裝置具有一個或數個發射器。可選地,二極體雷射裝置3具有較佳大功率範圍之二極體雷射條。二極體雷射器配置1另具至少一個散熱裝置5,其中在圖1所示實施例中設有恰好一個散熱裝置5。二極體雷射裝置3至少部分地佈置在散熱裝置5上。二極體雷射裝置3具有基面6。特定言之,二極體雷射裝置3透過基面6在第一接觸區域7內至少部分地貼靠在散熱裝置5上。第一接觸區域7在此尤指二極體雷射裝置3與散熱裝置5特別是平面地相互鄰接的區域。Fig. 1 schematically shows a first embodiment of a diode laser arrangement 1 in a perspective oblique view. The diode laser configuration 1 has a diode laser device 3. In the embodiment shown in FIG. 1, the diode laser device 3 is exemplarily square. The diode laser device has one or several emitters. Optionally, the diode laser device 3 has a diode laser bar with a better high power range. The diode laser configuration 1 additionally has at least one heat dissipation device 5, in which exactly one heat dissipation device 5 is provided in the embodiment shown in FIG. 1. The diode laser device 3 is at least partially arranged on the heat sink 5. The diode laser device 3 has a base surface 6. In particular, the diode laser device 3 at least partially abuts on the heat sink 5 in the first contact area 7 through the base surface 6. The first contact area 7 here particularly refers to the area where the diode laser device 3 and the heat dissipation device 5 are adjacent to each other in a plane.

二極體雷射裝置3被構建為用於透過位於二極體雷射裝置3之發射側10上的發射面9來發射雷射束。該雷射束的發射方向用箭頭11示意性示出。圖1中的發射面9呈平面狀。特別是大體垂直於發射面9地發射雷射束。至少透過發射面9的一個區段發射雷射束。該區段特別是位於發射側10上之二極體雷射裝置3的-從觀察者視角視之-下緣12附近,特別是在二極體雷射裝置3的p區域內。在圖1所示實施例中,二極體雷射裝置3的下緣12大體相當於發射面9的-從觀察者視角視之-下邊緣。The diode laser device 3 is configured to emit a laser beam through the emitting surface 9 located on the emitting side 10 of the diode laser device 3. The emission direction of the laser beam is schematically indicated by arrow 11. The emitting surface 9 in FIG. 1 is flat. In particular, the laser beam is emitted substantially perpendicular to the emitting surface 9. The laser beam is emitted through at least one section of the emitting surface 9. This section is particularly located near the lower edge 12 of the diode laser device 3 on the emitting side 10-as viewed from the observer's point of view-especially in the p-area of the diode laser device 3. In the embodiment shown in FIG. 1, the lower edge 12 of the diode laser device 3 is substantially equivalent to the lower edge of the emitting surface 9-as viewed from the observer's perspective.

散熱裝置5被構建為用於從二極體雷射裝置3排出熱量。特定言之,透過第一接觸區域7實現從二極體雷射裝置3到散熱裝置5的熱傳遞。散熱裝置5具有正面13,該正面與發射面9位於二極體雷射器配置1的同一側上,散熱裝置至少在該正面上具有至少一個第一端面區段15,其相對發射面9而言傾斜定向。亦即,正面13與發射側10位於二極體雷射器配置1的同一側上。The heat sink 5 is constructed to discharge heat from the diode laser device 3. In particular, the heat transfer from the diode laser device 3 to the heat sink 5 is realized through the first contact area 7. The heat dissipating device 5 has a front surface 13 which is located on the same side of the diode laser configuration 1 as the emitting surface 9. The heat dissipating device has at least one first end surface section 15 on at least the front surface, which is opposite to the emitting surface 9 Language oblique orientation. That is, the front surface 13 and the emitting side 10 are located on the same side of the diode laser configuration 1.

在圖1所示實施例中,散熱裝置5在正面13上具有兩個第一端面區段15,即第一端面區段15'及另一第一端面區段15''。該另一第一端面區段15''在圖1中用虛線表示。第一端面區段15'及另一第一端面區段15''在此皆例示性地呈平面狀。In the embodiment shown in FIG. 1, the heat dissipation device 5 has two first end surface sections 15 on the front surface 13, namely, a first end surface section 15 ′ and another first end surface section 15 ″. This other first end section 15" is indicated by a dashed line in FIG. 1. The first end surface section 15 ′ and the other first end surface section 15 ″ are both planar here by way of example.

用虛線表示該另一第一端面區段15''之目的在於,其視需要亦可去除,其中在此情況下,散熱裝置5在正面13上具有恰好一個第一端面區段15,即該第一端面區段15',且其中在此情況下,熱沉29的輪廓在正面13上用實線-而非虛線-表示。此種技術方案特別是在以下情況下是可行的:二極體雷射裝置3的輻射特性能夠使得雷射束不被熱沉29遮蔽,此點例如出現在雷射束的擴張角較小的情形下。The purpose of showing the other first end face section 15" with a dashed line is that it can also be removed as needed. In this case, the heat sink 5 has exactly one first end face section 15 on the front face 13, that is, the The first end face section 15 ′, and wherein in this case, the outline of the heat sink 29 is represented on the front face 13 by a solid line-not a dashed line -. This technical solution is particularly feasible in the following situations: the radiation characteristics of the diode laser device 3 can make the laser beam not shielded by the heat sink 29, which occurs, for example, when the expansion angle of the laser beam is small. Circumstances.

特定言之,該至少一個第一端面區段15,即此處之第一端面區段15'及另一第一端面區段15'',的表面法線與發射面9之表面法線間的角度大於0度且小於90度。特定言之,該至少一個第一端面區段15,即此處之第一端面區段15'及另一第一端面區段15'',的表面法線朝沿箭頭11延伸的雷射束軸傾斜。特別是在圖1所示實施例中,該至少一個第一端面區段15,即此處之第一端面區段15'及另一第一端面區段15'',的表面法線與發射面9之表面法線間的角度為至少40度,最大60度,較佳為50度。In particular, the surface normal of the at least one first end surface section 15, that is, the first end surface section 15' and the other first end surface section 15" here, and the surface normal of the emitting surface 9 The angle of is greater than 0 degrees and less than 90 degrees. In particular, the surface normal of the at least one first end face section 15, namely the first end face section 15' and the other first end face section 15" here, faces the laser beam extending along the arrow 11 The axis is tilted. Especially in the embodiment shown in FIG. 1, the surface normal and emission of the at least one first end surface section 15, namely the first end surface section 15' and the other first end surface section 15" here, are The angle between the surface normals of the face 9 is at least 40 degrees, and at most 60 degrees, preferably 50 degrees.

特定言之,二極體雷射裝置3在發射面9的區域內相對散熱裝置5的最前端17而言凹進佈置。最前端17尤指某個區域,其相對沿雷射束軸延伸的座標軸而言,即沿箭頭11而言,距離發射面9最遠。In particular, the diode laser device 3 is arranged recessed relative to the foremost end 17 of the heat sink 5 in the region of the emitting surface 9. The foremost end 17 especially refers to a certain area, which is the farthest from the emitting surface 9 in terms of the coordinate axis extending along the laser beam axis, that is, along the arrow 11.

可選地,在圖1所示實施例中,散熱裝置5在正面13上具有至少一個第二端面區段19,其平行於發射面9。如圖1所示,散熱裝置5在正面13上具有兩個第二端面區段19,即第二端面區段19'及另一第二端面區段19''。第二端面區段19'及另一第二端面區段19''在此皆呈平面狀。第二端面區段19'及另一第二端面區段19''在此皆鄰接第一端面區段15'的兩側,即該第一端面區段15'的-從觀察者視角視之-上邊緣及下邊緣。Optionally, in the embodiment shown in FIG. 1, the heat dissipation device 5 has at least one second end surface section 19 on the front surface 13, which is parallel to the emitting surface 9. As shown in FIG. 1, the heat dissipation device 5 has two second end surface sections 19 on the front surface 13, namely, a second end surface section 19 ′ and another second end surface section 19 ″. The second end surface section 19' and the other second end surface section 19" are both planar here. The second end face section 19' and the other second end face section 19" are here adjacent to both sides of the first end face section 15', that is, the first end face section 15'-from the observer's perspective -Upper edge and lower edge.

可選地,該至少一個第一端面區段15及/或該至少一個第二端面區段19齊平地鄰接發射面9。在圖1所示實施例中,第二端面區段19'齊平地鄰接發射面9。散熱裝置5的上緣21,該上緣在此相當於第二端面區段19'的-從觀察者視角視之-上邊緣,貼靠在二極體雷射裝置3的下緣12上或者發射面9的下邊緣上。因此,發射面9與散熱裝置5,特別是第二端面區段19',在此藉其邊緣相靠。二極體雷射裝置3亦可藉其發射面9略微伸出散熱裝置5的上緣21。Optionally, the at least one first end surface section 15 and/or the at least one second end surface section 19 are flush with the emitting surface 9. In the embodiment shown in FIG. 1, the second end surface section 19 ′ flushly adjoins the emitting surface 9. The upper edge 21 of the heat sink 5, which here corresponds to the upper edge of the second end section 19'-from the observer's perspective, abuts against the lower edge 12 of the diode laser device 3 or On the lower edge of the emission surface 9. Therefore, the emitting surface 9 and the heat dissipation device 5, in particular the second end surface section 19', are here against each other by their edges. The diode laser device 3 can also slightly extend from the upper edge 21 of the heat sink 5 by means of its emitting surface 9.

可選地,該至少一個散熱裝置5具有對應於該至少一個第一端面區段15之側向至少部分環繞的斜面區段。二極體雷射器配置1的此種技術方案在圖1中未予繪示。但如圖1所示,散熱裝置5除在散熱裝置5的正面13上外,亦在相對該正面13的背面23上及在散熱裝置5之佈置在正面13與背面23之間的兩個相對佈置的側面25上,伸出二極體雷射裝置3的基面6。此種方案特別有利於傳遞二極體雷射裝置3之損耗熱。但散熱裝置5在背面23及側面25上不具有對應於該至少一個第一端面區段15的斜面。Optionally, the at least one heat dissipating device 5 has an inclined surface section corresponding to the at least one first end surface section 15 that is at least partially surrounded in a lateral direction. This technical solution of the diode laser configuration 1 is not shown in FIG. 1. However, as shown in FIG. 1, the heat sink 5 is not only on the front 13 of the heat sink 5, but also on the back 23 opposite to the front 13 and on the two opposite sides of the heat sink 5 arranged between the front 13 and the back 23. On the side surface 25 of the arrangement, the base surface 6 of the diode laser device 3 protrudes. This solution is particularly beneficial to transfer the loss heat of the diode laser device 3. However, the heat dissipation device 5 does not have a slope corresponding to the at least one first end surface section 15 on the back 23 and the side 25.

可選地,該至少一個散熱裝置5至少部分地具有包含金剛石含量的材料或者由包含金剛石含量的材料構成。Optionally, the at least one heat dissipating device 5 at least partially has a material containing diamond content or is composed of a material containing diamond content.

可選地,該至少一個散熱裝置5具有散熱器27或熱沉29。在圖1所示實施例中,散熱裝置5具有散熱器27及熱沉29。二極體雷射裝置3透過基面6至少部分地佈置在散熱器27上。特定言之,二極體雷射裝置3與散熱器27在第一接觸區域7內相互靠近佈置,其中二者特別是相互貼靠。此外,散熱器27與熱沉29在第二接觸區域31內相互靠近佈置。特定言之,散熱器27與熱沉29在第二接觸區域31內相互貼靠。亦即,散熱器27大體上夾層式地佈置在二極體雷射裝置3與熱沉29之間。Optionally, the at least one heat dissipation device 5 has a radiator 27 or a heat sink 29. In the embodiment shown in FIG. 1, the heat dissipation device 5 has a heat sink 27 and a heat sink 29. The diode laser device 3 is at least partially arranged on the radiator 27 through the base 6. In particular, the diode laser device 3 and the heat sink 27 are arranged close to each other in the first contact area 7, and the two are particularly close to each other. In addition, the heat sink 27 and the heat sink 29 are arranged close to each other in the second contact area 31. In particular, the heat sink 27 and the heat sink 29 abut against each other in the second contact area 31. That is, the heat sink 27 is generally arranged in a sandwich type between the diode laser device 3 and the heat sink 29.

散熱器27在此例示性地構建為用於二極體雷射裝置3的支承件。散熱器27特別是用於將二極體雷射裝置3之損耗熱傳遞至及/或分佈至熱沉29。The heat sink 27 is here exemplarily constructed as a support for the diode laser device 3. The heat sink 27 is particularly used to transfer and/or distribute the loss heat of the diode laser device 3 to the heat sink 29.

熱沉29特別是藉由冷卻流體而可冷卻。由此,熱沉29特別是被構建為用於藉由冷卻流體例如透過冷卻循環來排出藉由散熱器27而被傳遞至熱沉29的損耗熱。The heat sink 29 can be cooled especially by a cooling fluid. Thus, the heat sink 29 is particularly configured to discharge the lost heat transferred to the heat sink 29 by the radiator 27 by the cooling fluid, for example, through a cooling cycle.

可選地,散熱器27及/或熱沉29分別具有該至少一個第一端面區段15及/或該至少一個第二端面區段19。在圖1所示實施例中,散熱器27具有該第一端面區段15'以及該第二端面區段19'及該另一第二端面區段19''。如圖1所示,熱沉29具有虛線示出的該另一第一端面區段15''。作為替代方案,熱沉29呈方形且不具有該另一第一端面區段15'',其中該實施例用實線而非虛線表示。Optionally, the heat sink 27 and/or the heat sink 29 respectively have the at least one first end surface section 15 and/or the at least one second end surface section 19. In the embodiment shown in FIG. 1, the heat sink 27 has the first end surface section 15 ′, the second end surface section 19 ′, and the other second end surface section 19 ″. As shown in FIG. 1, the heat sink 29 has the other first end surface section 15 ″ shown in dashed lines. As an alternative, the heat sink 29 is square and does not have the other first end section 15", wherein this embodiment is represented by a solid line instead of a dashed line.

可選地,該至少一個散熱裝置5具有散熱器27及熱沉29,其中二極體雷射裝置3在發射面9的區域內相對散熱器27的最前端33而言凹進佈置,且其中散熱器27在最前端33上相對熱沉29的最前端35而言凹進佈置。在圖1所示實施例中,散熱裝置5的最前端17對應於熱沉29的最前端35。最前端33尤指散熱器27的某個區域,其相對沿雷射束軸延伸的座標軸而言,即沿箭頭11而言,距離發射面9最遠。特定言之,散熱器27在正面13上伸出基面6。類似地,最前端35尤指熱沉29的某個區域,其相對該座標軸而言距離發射面9最遠。Optionally, the at least one heat dissipating device 5 has a heat sink 27 and a heat sink 29, wherein the diode laser device 3 is recessed relative to the foremost end 33 of the heat sink 27 in the region of the emitting surface 9, and wherein The radiator 27 is arranged recessed on the foremost end 33 relative to the foremost end 35 of the heat sink 29. In the embodiment shown in FIG. 1, the foremost end 17 of the heat sink 5 corresponds to the foremost end 35 of the heat sink 29. The foremost end 33 especially refers to a certain area of the radiator 27, which is the farthest from the emitting surface 9 with respect to the coordinate axis extending along the laser beam axis, that is, along the arrow 11. In particular, the heat sink 27 protrudes from the base surface 6 on the front surface 13. Similarly, the foremost end 35 especially refers to a certain area of the heat sink 29, which is the farthest from the emitting surface 9 with respect to the coordinate axis.

可選地,散熱器27的該至少一個第一端面區段15及/或散熱器27的該至少一個第二端面區段19齊平地鄰接熱沉29的該至少一個第一端面區段15及/或熱沉29的該至少一個第二端面區段19。如圖1所示,散熱器27的該另一第二端面區段19''齊平地鄰接熱沉29的該另一第一端面區段15''。特定言之,散熱器27的-從觀察者視角視之-下緣37與熱沉29的-從觀察者視角視之-上緣39相互貼靠。因此,散熱器27與熱沉29藉其邊緣相靠。Optionally, the at least one first end face section 15 of the heat sink 27 and/or the at least one second end face section 19 of the heat sink 27 flushly abuts the at least one first end face section 15 and the at least one first end face section 15 of the heat sink 29 /Or the at least one second end face section 19 of the heat sink 29. As shown in FIG. 1, the other second end surface section 19 ″ of the heat sink 27 flushly abuts the other first end surface section 15 ″ of the heat sink 29. In particular, the lower edge 37 of the heat sink 27-from the observer's perspective-and the upper edge 39 of the heat sink 29-from the observer's perspective-abut against each other. Therefore, the radiator 27 and the heat sink 29 lean against each other by their edges.

在圖1所示實施例中,散熱器27的-從觀察者視角視之-上緣對應於散熱裝置5的上緣21。亦即,散熱器27的上緣在此貼靠在二極體雷射裝置3的下緣12上。In the embodiment shown in FIG. 1, the upper edge of the heat sink 27-as viewed from the observer's perspective-corresponds to the upper edge 21 of the heat sink 5. That is, the upper edge of the radiator 27 abuts on the lower edge 12 of the diode laser device 3 here.

可選地,二極體雷射裝置3與該至少一個散熱裝置5間及/或該至少一個散熱裝置5的散熱器27與熱沉29間的連接係藉由焊接、黏合、嚙合、卡合或燒結而建立。如圖1所示,二極體雷射裝置3與散熱器27間的連接特別是藉由焊接、黏合、嚙合、卡合或燒結而建立。此外,散熱器27與熱沉29間的連接特別是藉由焊接、黏合、嚙合、卡合或燒結而建立。Optionally, the connection between the diode laser device 3 and the at least one heat dissipation device 5 and/or between the heat sink 27 and the heat sink 29 of the at least one heat dissipation device 5 is by welding, bonding, meshing, and clamping Or built by sintering. As shown in FIG. 1, the connection between the diode laser device 3 and the heat sink 27 is particularly established by welding, bonding, meshing, clamping or sintering. In addition, the connection between the heat sink 27 and the heat sink 29 is particularly established by welding, bonding, meshing, snapping, or sintering.

圖2以縱剖面圖示意性示出二極體雷射器配置1之第二實施例。相同元件及功能相同之元件以相同符號標示,故相關內容請參閱前述說明。二極體雷射器配置1在此具有兩個散熱裝置5,其中該二散熱裝置5的第一散熱裝置5'佈置在二極體雷射裝置3的第一側41上,且其中該二散熱裝置5的第二散熱裝置5''佈置在二極體雷射裝置3之相反於第一側41的第二側43上。Fig. 2 schematically shows a second embodiment of the diode laser arrangement 1 in a longitudinal sectional view. The same components and components with the same function are marked with the same symbols, so please refer to the foregoing description for related content. The diode laser configuration 1 here has two heat dissipation devices 5, wherein the first heat dissipation device 5'of the two heat dissipation devices 5 is arranged on the first side 41 of the diode laser device 3, and wherein the two heat dissipation devices 5' The second heat dissipation device 5 ″ of the heat dissipation device 5 is arranged on the second side 43 of the diode laser device 3 opposite to the first side 41.

在圖2所示實施例中,第一散熱裝置5'具有前述類型之散熱器27及熱沉29。二極體雷射裝置3與散熱器27在第一接觸區域7內相互靠近佈置。散熱器27與熱沉29在第二接觸區域31內相互靠近佈置。In the embodiment shown in FIG. 2, the first heat dissipation device 5 ′ has the aforementioned type of heat sink 27 and heat sink 29. The diode laser device 3 and the heat sink 27 are arranged close to each other in the first contact area 7. The heat sink 27 and the heat sink 29 are arranged close to each other in the second contact area 31.

在圖2所示實施例中,第二散熱裝置5''具有前述類型之另一熱沉29'。二極體雷射裝置3與該另一熱沉29'在第三接觸區域45內相互靠近佈置。替代地,第二散熱裝置5''亦可具有類似於該第一散熱裝置5'的散熱器,但此處未予繪示。In the embodiment shown in FIG. 2, the second heat dissipation device 5" has another heat sink 29' of the aforementioned type. The diode laser device 3 and the other heat sink 29 ′ are arranged close to each other in the third contact area 45. Alternatively, the second heat dissipation device 5" can also have a heat sink similar to the first heat dissipation device 5', but it is not shown here.

亦即,圖2中之二極體雷射器配置1具有兩個熱沉29、29'。二極體雷射裝置3在此至少部分地佈置在散熱器27的第一側41上及熱沉29'的第二側43上。散熱裝置5'、5''被構建為用於特別是透過第一接觸區域7及第三接觸區域45從二極體雷射裝置3排出熱量。That is, the diode laser configuration 1 in FIG. 2 has two heat sinks 29, 29'. The diode laser device 3 is here at least partially arranged on the first side 41 of the heat sink 27 and on the second side 43 of the heat sink 29'. The heat dissipating devices 5 ′, 5 ″ are constructed for dissipating heat from the diode laser device 3 especially through the first contact area 7 and the third contact area 45.

第一散熱裝置5'以及第二散熱裝置5''被間隔件47隔開。間隔件47佈置在散熱裝置5(此處係第一散熱裝置5'及第二散熱裝置5'')之背面23的區域內。特定言之,間隔件47佈置在散熱裝置5'、5''之反向於佈置有二極體雷射裝置3之區域的區域內。The first heat dissipation device 5 ′ and the second heat dissipation device 5 ″ are separated by a spacer 47. The spacer 47 is arranged in the area of the back 23 of the heat dissipation device 5 (here, the first heat dissipation device 5'and the second heat dissipation device 5"). In particular, the spacer 47 is arranged in an area of the heat sink 5 ′, 5 ″ opposite to the area where the diode laser device 3 is arranged.

第一散熱裝置5'在正面13上具有兩個第一端面區段15,即第一端面區段15'及另一第一端面區段15''',二者相對發射面9而言傾斜定向。如圖2所示,散熱器27具有該第一端面區段15'及該另一第一端面區段15'''。兩個第一端面區段15'、15'''在此齊平地相互鄰接。第一端面區段15'的表面法線與發射面9的表面法線間的第一角度在此大於0度且小於90度。此外,該另一第一端面區段15'''的表面法線與發射面9的表面法線間的第二角度在此大於0度且小於90度。在圖2所示實施例中,第一角度小於第二角度。如此便能實現由該第一端面區段15'與該另一第一端面區段15'''構成之面的大體凹形結構。The first heat dissipating device 5'has two first end face sections 15 on the front face 13, namely a first end face section 15' and another first end face section 15"', both of which are inclined relative to the emitting surface 9 Directional. As shown in FIG. 2, the heat sink 27 has the first end surface section 15' and the other first end surface section 15"'. The two first end face sections 15', 15'" here adjoin one another flush. The first angle between the surface normal of the first end surface section 15 ′ and the surface normal of the emitting surface 9 is here greater than 0 degrees and less than 90 degrees. In addition, the second angle between the surface normal of the other first end surface section 15 ′″ and the surface normal of the emitting surface 9 is here greater than 0 degrees and less than 90 degrees. In the embodiment shown in Figure 2, the first angle is smaller than the second angle. In this way, a substantially concave structure of the surface formed by the first end face section 15' and the other first end face section 15"' can be realized.

可選地,第一角度及第二角度皆至少為40度,最大為60度。Optionally, both the first angle and the second angle are at least 40 degrees, and the maximum is 60 degrees.

可選地,二極體雷射裝置3在發射面9的區域內相對散熱裝置的最前端17而言,特別是該第一散熱裝置5'的最前端17'及該第二散熱裝置5''的最前端17''而言,凹進佈置。Optionally, the diode laser device 3 is relative to the front end 17 of the heat sink in the area of the emitting surface 9, especially the front end 17' of the first heat sink 5'and the second heat sink 5' The front end of the '17''', recessed arrangement.

如圖2所示,第一端面區段15'齊平地鄰接發射面9。特定言之,二極體雷射裝置3的下緣12或發射面9的下邊緣以及散熱器27之在此對應於第一散熱裝置5'之上緣21的上緣,特別是鄰接第一端面區段15'的上邊緣。As shown in FIG. 2, the first end surface section 15 ′ is flush with the emitting surface 9. In particular, the lower edge 12 of the diode laser device 3 or the lower edge of the emitting surface 9 and the heat sink 27 here correspond to the upper edge of the upper edge 21 of the first heat sink 5', especially adjacent to the first heat sink. The upper edge of the end section 15'.

可選地,如圖2所示,散熱裝置5藉由冷卻流體而可冷卻。冷卻流體可經由冷卻流體入口49被導入第一散熱裝置5',在此被導入熱沉29的冷卻通道50。該冷卻流體在此可在冷卻通道50中穿過熱沉29受到導引。該冷卻流體可經由冷卻流體出口51被從第一散熱裝置5',在此從熱沉29的冷卻通道50導出。該冷卻流體的流向例如用箭頭53示意性示出。類似地,冷卻流體可經由另一冷卻流體入口49'被導入第二散熱裝置5'',特別是被導入另一熱沉29'的另一冷卻通道50'。該冷卻流體在此可在另一冷卻通道50'中穿過另一熱沉29'受到導引。該冷卻流體可經由另一冷卻流體出口51'被從第二散熱裝置5'',特別是從另一熱沉29'的另一冷卻通道50'導出。該冷卻流體的流向例如用箭頭53'示意性示出。Optionally, as shown in FIG. 2, the heat dissipation device 5 can be cooled by a cooling fluid. The cooling fluid can be introduced into the first heat dissipation device 5 ′ via the cooling fluid inlet 49, where it is introduced into the cooling channel 50 of the heat sink 29. The cooling fluid can here be guided through the heat sink 29 in the cooling channel 50. The cooling fluid can be discharged from the first heat dissipating device 5 ′ via the cooling fluid outlet 51, here from the cooling channel 50 of the heat sink 29. The flow direction of the cooling fluid is schematically shown, for example, by arrows 53. Similarly, the cooling fluid can be introduced into the second heat dissipation device 5" via another cooling fluid inlet 49', in particular into another cooling channel 50' of another heat sink 29'. The cooling fluid can here be guided through another heat sink 29' in another cooling channel 50'. The cooling fluid can be led out from the second heat sink 5" via another cooling fluid outlet 51', in particular from another cooling channel 50' of the other heat sink 29'. The flow direction of the cooling fluid is schematically shown, for example, by arrow 53'.

在圖2所示實施例中,第一散熱裝置5'具有熱交換裝置55,其有助於將二極體雷射裝置3的熱量傳遞至熱沉29中的冷卻流體。熱交換裝置55可具有佈置在冷卻通道50中的冷卻翅片。類似地,此處之第二散熱裝置5''具有另一熱交換裝置55',其有助於將二極體雷射裝置3的熱量傳遞至另一熱沉29'中的冷卻流體。該另一熱交換裝置55'亦可具有佈置在另一冷卻通道50'中的冷卻翅片。可選地,熱沉29、29'特別是在與散熱器27或二極體雷射裝置3相鄰的區域56、56'內呈薄壁狀,以便有效地從二極體雷射裝置3及/或散熱器27進行熱傳遞。In the embodiment shown in FIG. 2, the first heat dissipation device 5 ′ has a heat exchange device 55 which helps to transfer the heat of the diode laser device 3 to the cooling fluid in the heat sink 29. The heat exchange device 55 may have cooling fins arranged in the cooling passage 50. Similarly, the second heat dissipation device 5" here has another heat exchange device 55', which helps to transfer the heat of the diode laser device 3 to the cooling fluid in the other heat sink 29'. The other heat exchange device 55' may also have cooling fins arranged in the other cooling channel 50'. Optionally, the heat sinks 29, 29' are particularly thin-walled in the regions 56, 56' adjacent to the radiator 27 or the diode laser device 3, so as to effectively remove the heat sink from the diode laser device 3. And/or the radiator 27 performs heat transfer.

可選地,散熱裝置5'、5''被構建為用於對二極體雷射裝置3進行電接觸。可選地,透過第一側41上的第一接觸區域7及第二側43上的第三接觸區域45實現對二極體雷射裝置3之電接觸。特定言之,二極體雷射裝置3在第一側41的區域內具有p區域,在第二側43的區域內具有n區域。Optionally, the heat dissipation devices 5 ′, 5 ″ are configured to make electrical contact with the diode laser device 3. Optionally, electrical contact to the diode laser device 3 is achieved through the first contact area 7 on the first side 41 and the third contact area 45 on the second side 43. Specifically, the diode laser device 3 has a p-area in the area of the first side 41 and an n-area in the area of the second side 43.

圖3以縱剖面圖示意性示出二極體雷射器配置1之第三實施例。相同元件及功能相同之元件以相同符號標示,故相關內容請參閱前述說明。二極體雷射器配置1與圖2所示實施例中之二極體雷射器配置的唯一區別在於:該另一熱沉29'相對熱沉29而言-從觀察者視角視之-朝左移動。熱沉29、29'採用類似結構以降低製造成本。例示性地,在圖3之視圖中,該另一熱沉29'的端面大體在與發射面9同一平面內貼靠在最前端35'上。此點係有利之舉,因為如此可特別是在擴張角較大的情況下防止雷射束被該另一熱沉29'遮蔽。Fig. 3 schematically shows a third embodiment of the diode laser arrangement 1 in a longitudinal sectional view. The same components and components with the same function are marked with the same symbols, so please refer to the foregoing description for related content. The only difference between the diode laser configuration 1 and the diode laser configuration in the embodiment shown in FIG. 2 is that the other heat sink 29' is relative to the heat sink 29-from the observer's perspective- Move to the left. The heat sinks 29 and 29' adopt similar structures to reduce manufacturing costs. Illustratively, in the view of FIG. 3, the end surface of the other heat sink 29 ′ abuts on the foremost end 35 ′ substantially in the same plane as the emitting surface 9. This is advantageous because it prevents the laser beam from being shielded by the other heat sink 29', especially when the expansion angle is large.

在未予繪示的替代方案中,該另一熱沉29'在背面23上與熱沉29齊平,此點有利於減小二極體雷射器配置1的結構空間。In an alternative solution that is not shown, the other heat sink 29 ′ is flush with the heat sink 29 on the back 23, which is beneficial to reduce the structural space of the diode laser configuration 1.

圖4以透視斜視圖示意性示出二極體雷射器配置1之第四實施例。相同元件及功能相同之元件以相同符號標示,故相關內容請參閱前述說明。圖4所示實施例中之二極體雷射器配置1具有兩個散熱裝置5。該二散熱裝置5的第一散熱裝置5'佈置在二極體雷射裝置3的第一側41上,其中該二散熱裝置5的第二散熱裝置5''佈置在二極體雷射裝置3的第二側43上。第一散熱裝置5'具有散熱器27,其中第二散熱裝置5''具有另一散熱器27'。亦即在圖4中,二極體雷射裝置3佈置在散熱器27與該另一散熱器27'之間。Fig. 4 schematically shows a fourth embodiment of the diode laser arrangement 1 in a perspective oblique view. The same components and components with the same function are marked with the same symbols, so please refer to the foregoing description for related content. The diode laser configuration 1 in the embodiment shown in FIG. 4 has two heat sinks 5. The first heat dissipation device 5'of the two heat dissipation devices 5 is arranged on the first side 41 of the diode laser device 3, and the second heat dissipation device 5" of the two heat dissipation devices 5 is arranged on the diode laser device 3 on the second side 43. The first heat dissipation device 5'has a heat sink 27, and the second heat dissipation device 5" has another heat sink 27'. That is, in FIG. 4, the diode laser device 3 is arranged between the radiator 27 and the other radiator 27'.

散熱器27具有第一端面區段15',其齊平地鄰接二極體雷射裝置3之下緣12上的發射面9。在該第一端面區段15'上齊平地連接有第二端面區段19',其佈置在第一端面區段15'之背離二極體雷射裝置3的一側上。該另一散熱器27'採用類似結構。該另一散熱器具有另一第一端面區段15'''',其齊平地鄰接二極體雷射裝置3之上緣57上的發射面9。二極體雷射裝置3的上緣57在此相當於發射面9的-從觀察者視角視之-上邊緣。在該另一第一端面區段15''''上齊平地連接有另一第二端面區段19''',其佈置在另一第一端面區段15''''之背離二極體雷射裝置3的一側上。The heat sink 27 has a first end surface section 15 ′, which flushly abuts the emitting surface 9 on the lower edge 12 of the diode laser device 3. A second end surface section 19 ′ is flushly connected to this first end surface section 15 ′, which is arranged on the side of the first end surface section 15 ′ facing away from the diode laser device 3. The other radiator 27' adopts a similar structure. The other heat sink has another first end surface section 15 ″″ which flushly abuts the emitting surface 9 on the upper edge 57 of the diode laser device 3. The upper edge 57 of the diode laser device 3 here corresponds to the upper edge-from the observer's perspective-of the emitting surface 9. The other first end surface section 15"" is flushly connected with another second end surface section 19"', which is arranged on the opposite side of the other first end surface section 15"". Body laser device 3 on one side.

二極體雷射裝置3在發射面9的區域內相對散熱器27的最前端33而言且相對該另一散熱器27'的最前端33'而言凹進佈置。The diode laser device 3 is arranged recessed relative to the foremost end 33 of the radiator 27 and relative to the foremost end 33' of the other radiator 27' in the area of the emitting surface 9.

總體而言,藉由二極體雷射器配置1來防止雷射束的發射被該至少一個散熱裝置5阻礙,其中同時特別是在發射側10的區域內確保二極體雷射裝置3之損耗熱的有效排出。In general, the diode laser configuration 1 prevents the emission of the laser beam from being obstructed by the at least one heat sink 5, and at the same time, it ensures that the diode laser device 3 is particularly in the region of the emitting side 10. Efficient discharge of lost heat.

1‧‧‧二極體雷射器配置 3‧‧‧二極體雷射裝置 5,5',5''‧‧‧散熱裝置 6‧‧‧基面 7‧‧‧第一接觸區域 9‧‧‧發射面 10‧‧‧發射側 11‧‧‧箭頭 12‧‧‧下緣 13‧‧‧正面 15,15',15'',15''',15''''‧‧‧第一端面區段 17,17',17''‧‧‧最前端 19,19',19'',19'''‧‧‧第二端面區段 21‧‧‧上緣 23‧‧‧背面 25‧‧‧側面 27,27'‧‧‧散熱器 29,29'‧‧‧熱沉 31‧‧‧第二接觸區域 33,33'‧‧‧最前端 35‧‧‧最前端 37‧‧‧下緣 39‧‧‧上緣 41‧‧‧第一側 43‧‧‧第二側 45‧‧‧第三接觸區域 47‧‧‧間隔件 49,49'‧‧‧冷卻流體入口 50,50'‧‧‧冷卻通道 51‧‧‧冷卻流體出口 53‧‧‧箭頭 55,55'‧‧‧熱交換裝置 56,56'‧‧‧區域 57‧‧‧上緣 1‧‧‧Diode laser configuration 3‧‧‧Diode laser device 5,5',5''‧‧‧heat sink 6‧‧‧Base surface 7‧‧‧First contact area 9‧‧‧Launching surface 10‧‧‧Launching side 11‧‧‧Arrow 12‧‧‧Bottom edge 13‧‧‧Front 15, 15', 15'', 15''', 15''''‧‧‧First end section 17, 17', 17``‧‧‧Foremost 19,19',19``,19'''‧‧‧Second end section 21‧‧‧Upper edge 23‧‧‧Back 25‧‧‧Side 27, 27'‧‧‧Radiator 29, 29'‧‧‧ Heat sink 31‧‧‧Second contact area 33, 33'‧‧‧Foremost 35‧‧‧Front end 37‧‧‧Bottom edge 39‧‧‧Upper edge 41‧‧‧First side 43‧‧‧Second side 45‧‧‧Third contact area 47‧‧‧Spacer 49,49'‧‧‧Cooling fluid inlet 50,50'‧‧‧cooling channel 51‧‧‧Cooling fluid outlet 53‧‧‧Arrow 55, 55'‧‧‧Heat exchange device 56, 56'‧‧‧ area 57‧‧‧Upper edge

下面參考圖式對本發明進行詳細闡述。其中: 圖1為二極體雷射器配置之第一實施例的示意性透視斜視圖, 圖2為二極體雷射器配置之第二實施例的縱剖面示意圖, 圖3為二極體雷射器配置之第三實施例的縱剖面示意圖,及 圖4為二極體雷射器配置之第四實施例的示意性透視斜視圖。The present invention will be described in detail below with reference to the drawings. among them: Fig. 1 is a schematic perspective perspective view of the first embodiment of the diode laser configuration, Fig. 2 is a schematic longitudinal cross-sectional view of a second embodiment of a diode laser configuration, Fig. 3 is a schematic longitudinal cross-sectional view of a third embodiment of a diode laser configuration, and Fig. 4 is a schematic perspective perspective view of a fourth embodiment of a diode laser configuration.

1‧‧‧二極體雷射器配置 1‧‧‧Diode laser configuration

3‧‧‧二極體雷射裝置 3‧‧‧Diode laser device

5‧‧‧散熱裝置 5‧‧‧Heat Dissipation Device

6‧‧‧基面 6‧‧‧Base surface

7‧‧‧第一接觸區域 7‧‧‧First contact area

9‧‧‧發射面 9‧‧‧Launching surface

10‧‧‧發射側 10‧‧‧Launching side

11‧‧‧箭頭 11‧‧‧Arrow

12‧‧‧下緣 12‧‧‧Bottom edge

13‧‧‧正面 13‧‧‧Front

15,15',15"‧‧‧第一端面區段 15, 15', 15"‧‧‧First end section

17‧‧‧最前端 17‧‧‧Front end

19,19',19"‧‧‧第二端面區段 19, 19', 19"‧‧‧Second end section

21‧‧‧上緣 21‧‧‧Upper edge

23‧‧‧背面 23‧‧‧Back

25‧‧‧側面 25‧‧‧Side

27‧‧‧散熱器 27‧‧‧Radiator

29‧‧‧熱沉 29‧‧‧Heat sink

31‧‧‧第二接觸區域 31‧‧‧Second contact area

33,33'‧‧‧最前端 33, 33'‧‧‧Foremost

35‧‧‧最前端 35‧‧‧Front end

37‧‧‧下緣 37‧‧‧Bottom edge

39‧‧‧上緣 39‧‧‧Upper edge

Claims (14)

一種二極體雷射器配置(1),具有:二極體雷射裝置(3),及至少一個散熱裝置(5,5',5"),其中該二極體雷射裝置(3)至少部分地佈置在該至少一個散熱裝置(5,5',5")上,其中該二極體雷射裝置(3)被構建為用於透過發射面(9)發射雷射束,其中該至少一個散熱裝置(5,5',5")被構建為用於從該二極體雷射裝置(3)排出熱量,且其中該至少一個散熱裝置(5,5',5")具有正面(13),該正面與該發射面(9)位於該二極體雷射器配置(1)的同一側上,該至少一個散熱裝置至少在該正面上具有至少一個第一端面區段(15,15',15",15''',15''''),其相對該發射面(9)而言傾斜定向,其中該二極體雷射裝置(3)在該發射面(9)的區域內相對該至少一個散熱裝置(5,5',5")的最前端(17,17')而言凹進佈置。 A diode laser configuration (1), having: a diode laser device (3), and at least one heat dissipation device (5, 5', 5"), wherein the diode laser device (3) At least partially arranged on the at least one heat sink (5, 5', 5"), wherein the diode laser device (3) is configured to emit a laser beam through the emitting surface (9), wherein the At least one heat dissipation device (5, 5', 5") is constructed for dissipating heat from the diode laser device (3), and wherein the at least one heat dissipation device (5, 5', 5") has a front face (13), the front surface and the emitting surface (9) are located on the same side of the diode laser configuration (1), and the at least one heat sink has at least one first end surface section (15 , 15', 15", 15"', 15""), which is oriented obliquely with respect to the emitting surface (9), wherein the diode laser device (3) is on the emitting surface (9) Relative to the foremost end (17, 17') of the at least one heat dissipation device (5, 5', 5"), the area is recessed. 如請求項1之二極體雷射器配置(1),其特徵在於:該至少一個第一端面區段(15,15',15",15''',15'''')的表面法線與該發射面(9)的表面法線間的角度大於0度且小於90度。 For example, the diode laser configuration (1) of claim 1, characterized in that: the surface of the at least one first end face section (15, 15', 15", 15''', 15'''') The angle between the normal line and the surface normal of the emitting surface (9) is greater than 0 degrees and less than 90 degrees. 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個第一端面區段(15,15',15",15''',15'''')的表面法線與該發射面(9)的表面 法線間的該角度為至少40度,最大為60度。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one first end face section (15, 15', 15", 15''', 15'''') The surface normal to the surface of the emitting surface (9) The angle between the normals is at least 40 degrees, and the maximum is 60 degrees. 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")在該正面(13)上具有平行於該發射面(9)的至少一個第二端面區段(19,19',19",19''')。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat dissipation device (5, 5', 5") has on the front surface (13) parallel to the emitting surface ( 9) At least one second end face section (19, 19', 19", 19"'). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個第一端面區段(15,15',15",15''',15'''')及/或該至少一個第二端面區段(19,19',19",19''')齊平地鄰接該發射面(9)。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one first end face section (15, 15', 15", 15''', 15'''') And/or the at least one second end face section (19, 19', 19", 19"') flushly adjoins the emitting surface (9). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")具有對應於該至少一個第一端面區段(15,15',15",15''',15'''')之側向至少部分環繞的斜面區段。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat dissipation device (5, 5', 5") has a first end section (15, 15', 15", 15"', 15"") at least partly surrounding inclined plane section. 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")至少部分地具有包含金剛石含量的材料或者由包含金剛石含量的材料構成。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat sink (5, 5', 5") at least partly has a material containing diamond content or is made of diamond content The material composition. 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")具有散熱器(27,27')及/或熱沉(29,29')。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat sink (5, 5', 5") has a radiator (27, 27') and/or a heat sink (29, 29'). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該散熱器(27,27')及/或該熱沉(29,29')分別具有該至少一個第一端面區段(15,15', 15",15''',15'''')及/或該至少一個第二端面區段(19,19',19",19''')。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the heat sink (27, 27') and/or the heat sink (29, 29') respectively have the at least one first End section (15, 15', 15", 15"', 15"") and/or the at least one second end face section (19, 19', 19", 19"'). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")具有散熱器(27,27')及熱沉(29,29'),其中該二極體雷射裝置(3)在該發射面(9)的區域內相對該散熱器(27,27')的最前端(33,33')而言凹進佈置,其中該散熱器(27,27')在該最前端(33,33')上相對該熱沉(29,29')的最前端(35)而言凹進佈置。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat sink (5, 5', 5") has a radiator (27, 27') and a heat sink (29) , 29'), wherein the diode laser device (3) is arranged recessed relative to the foremost end (33, 33') of the radiator (27, 27') in the area of the emitting surface (9) , Wherein the radiator (27, 27') is recessed on the foremost end (33, 33') relative to the foremost end (35) of the heat sink (29, 29'). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該散熱器(27,27')的該至少一個第一端面區段(15,15',15",15''',15'''')及/或該散熱器(27,27')的該至少一個第二端面區段(19,19',19",19''')齊平地鄰接該熱沉(29,29')的該至少一個第一端面區段(15,15',15",15''',15'''')及/或該熱沉(29,29')的該至少一個第二端面區段(19,19',19",19''')。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one first end surface section (15, 15', 15", 15 of the radiator (27, 27') ''', 15'''') and/or the at least one second end section (19, 19', 19", 19''') of the radiator (27, 27') flushly abuts the heat The at least one first end section (15, 15', 15", 15"', 15"'') of the sink (29, 29') and/or the heat sink (29, 29') At least one second end face section (19, 19', 19", 19'''). 如請求項1或2之二極體雷射器配置(1),其特徵在於:該二極體雷射裝置(3)與該至少一個散熱裝置(5,5',5")間及/或該至少一個散熱裝置(5,5',5")的散熱器(27,27')與熱沉(29,29')間的連接係藉由焊接、黏合、嚙合、卡合或燒結而建立。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the diode laser device (3) and the at least one heat sink (5, 5', 5") and/ Or the connection between the heat sink (27, 27') and the heat sink (29, 29') of the at least one heat sink (5, 5', 5") is made by welding, bonding, meshing, clamping or sintering set up. 如請求項1或2之二極體雷射器配置(1),其特徵在於:該至少一個散熱裝置(5,5',5")被構建為用於對該二極體雷射裝置(3)進行電接觸。 For example, the diode laser configuration (1) of claim 1 or 2, characterized in that: the at least one heat dissipation device (5, 5', 5") is constructed for the diode laser device ( 3) Make electrical contact. 如請求項1或2之二極體雷射器配置(1),其特徵在於兩個散熱裝置 (5),其中該二散熱裝置(5)的第一散熱裝置(5')佈置在該二極體雷射裝置(3)的第一側(41)上,且其中該二散熱裝置(5)的第二散熱裝置(5")佈置在該二極體雷射裝置(3)之相反於該第一側(41)的第二側(43)上。 Such as claim 1 or 2 of the diode laser configuration (1), which is characterized by two heat sinks (5), wherein the first heat dissipation device (5') of the two heat dissipation devices (5) is arranged on the first side (41) of the diode laser device (3), and wherein the two heat dissipation devices (5) ) The second heat dissipation device (5") is arranged on the second side (43) of the diode laser device (3) opposite to the first side (41).
TW108121733A 2018-06-21 2019-06-21 Diode laser configuration TWI731348B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102018210136.1A DE102018210136A1 (en) 2018-06-21 2018-06-21 The diode laser assembly
DE102018210136.1 2018-06-21

Publications (2)

Publication Number Publication Date
TW202002438A TW202002438A (en) 2020-01-01
TWI731348B true TWI731348B (en) 2021-06-21

Family

ID=67070800

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108121733A TWI731348B (en) 2018-06-21 2019-06-21 Diode laser configuration

Country Status (3)

Country Link
DE (1) DE102018210136A1 (en)
TW (1) TWI731348B (en)
WO (1) WO2019243324A1 (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5812570A (en) * 1995-09-29 1998-09-22 Siemens Aktiengesellschaft Laser diode component with heat sink and method of producing a plurality of laser diode components
US20030231674A1 (en) * 2002-06-14 2003-12-18 Akira Kaneko Laser diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10113943B4 (en) * 2001-03-21 2009-01-22 Jenoptik Laserdiode Gmbh diode laser component
DE102004003524A1 (en) * 2003-08-29 2005-04-14 Osram Opto Semiconductors Gmbh Laser diode has monolithic integrated semiconductor having active layers, which is provided on micro channel type coolant, through adhesive layer
JP2006185931A (en) * 2004-12-24 2006-07-13 Tokuyama Corp Semiconductor laser device and its fabrication process
DE112008002436A5 (en) * 2007-09-13 2010-12-23 Lorenzen, Dirk, Dr. Method for producing at least one radiation source
DE102009040834B4 (en) * 2009-09-09 2013-10-31 Jenoptik Laser Gmbh Device for protecting an edge-emitting laser diode element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5812570A (en) * 1995-09-29 1998-09-22 Siemens Aktiengesellschaft Laser diode component with heat sink and method of producing a plurality of laser diode components
US20030231674A1 (en) * 2002-06-14 2003-12-18 Akira Kaneko Laser diode

Also Published As

Publication number Publication date
WO2019243324A1 (en) 2019-12-26
DE102018210136A1 (en) 2019-12-24
TW202002438A (en) 2020-01-01

Similar Documents

Publication Publication Date Title
US20190052050A1 (en) Low size and weight, high power fiber laser pump
JP4888721B2 (en) Manufacturing method of radiator having plate-like fins
JP6311424B2 (en) Light source device
US7016383B2 (en) Immersion-cooled monolithic laser diode array and method of manufacturing the same
JPH05508265A (en) Thin plate package for cooling arrays of edge-emitting laser diodes
US9667029B2 (en) Semiconductor laser light source
US20140119393A1 (en) Macro-channel water-cooled heat-sink for diode-laser bars
US20100309940A1 (en) High power laser package with vapor chamber
CN105305206B (en) Heat sink suitable for jet flow impact cooling system of disk laser
US20120294002A1 (en) Vapor chamber cooling of solid-state light fixtures
CN112033197A (en) Temperature equalizing plate and manufacturing method thereof
TWI731348B (en) Diode laser configuration
TWI729421B (en) Diode laser configuration and method for manufacturing diode laser configuration
KR101620165B1 (en) Battery module with intergrated heat sink member
CN113937615A (en) Cooling assembly and cooling method for laser
CN201008074Y (en) Solid-state thin-plate laser
CN206250571U (en) A kind of VCSEL lasers
JP2006223292A (en) Dna amplifier
US10118253B2 (en) Method for manufacturing light source assembly
JP2014197608A (en) Semiconductor laser device
JP6472683B2 (en) Semiconductor laser module
JP6906721B1 (en) Semiconductor laser device
KR101618747B1 (en) Apparatus for cooling substrate mounted with lajer diode
JP2009158644A (en) Laser module
JP2006319011A (en) Peltier module, and semiconductor laser light-emitting device