TWI728672B - A heat dissipation type electronic device - Google Patents

Abstract

The present invention provides a heat dissipation type electronic device. The heat dissipation type electronic device comprises: a substrate layer; a first electrode layer with function of heat dissipation formed on the substrate layer; high-power electronic element set on the first electrode layer; a second electrode layer formed above the first electrode layer and electronically connected with the high-power electronic element; and an insulator layer with function of electrical isolation formed between the first electrode layer and the second electrode layer. With the increased contacting area between the substrate layer and the first electrode layer, the device of the present invention has an advantage of fast heat conductive rate, thereby enhancing the stability and using life of the electronic device.

Description

Heat-dissipating electronic device

The present invention relates to an electronic device, and more particularly to a heat-dissipating electronic device.

With the development of information and technology, under the trend of miniaturization of electronic devices, the problem of heat released by the internal electronic components (especially high-power electronic components) during operation has become more and more serious. Good, it is difficult to quickly remove the heat, which will cause the electronic component's interface temperature to be too high for a long time, affect its operating efficiency, and cause the stability and life of the electronic device to be greatly reduced.

Press, the conventional electronic device 1, as shown in Figure 1, is on the surface of a substrate 10 carrying a high-power electronic component 12, and two layers of electrodes 111, 112 for electrically connecting the high-power electronic component 12 are provided , And the two electrodes 111, 112 are spaced apart with an appropriate spacing 110 to maintain insulation. Although the prior art has applied materials that are not easy to cause heat accumulation to improve the heat dissipation capacity of electronic devices, the existence of the spacing 110 limits the range of heat conduction paths of the electrode 111 layer connected to the high-power electronic component 12, and cannot significantly improve the electronics. The heat accumulation problem of the device.

In view of this, how to propose an electronic device that quickly removes the heat energy released by the electronic components, so as to solve the problems of the above-mentioned conventional technology, is indeed a lesson to be solved in the relevant industry. question.

In order to solve the above-mentioned problems, the present invention provides a heat-dissipating electronic device comprising: a substrate having corresponding first and second surfaces; a first electrode layer with heat dissipation function covering the first of the substrate On the surface; a high-power electronic component is provided on the first electrode layer; a second electrode layer is provided on the first electrode layer and is electrically connected to the high-power electronic component; and has an electrical isolation function The insulating layer is arranged between the first electrode layer and the second electrode layer.

In the electronic device of the present invention, the first electrode layer completely covers the first surface of the substrate, or its coverage area occupies at least one-fifth of the first surface of the substrate.

In a specific embodiment of the present invention, the first electrode layer is a single layer body or a plurality of layers stacked in a phase.

In a specific embodiment of the present invention, the thermal conductivity of the first electrode layer is 150 to 2000 watts/(m‧Kelvin) (W/(m‧K)), wherein the thermal expansion coefficient of the substrate is less than The thermal expansion coefficient of the first electrode layer.

In another embodiment of the present invention, the materials of the first electrode layer and the second electrode layer are independently selected from the group consisting of titanium, copper, nickel, palladium, platinum, gold, copper-tungsten alloy, and copper-aluminum alloy. At least one of the groups.

In a specific embodiment of the present invention, the substrate is a boron nitride substrate, an aluminum nitride substrate, a silicon carbide substrate, a ceramic substrate or a diamond substrate.

In a specific embodiment of the present invention, the insulating layer is selected from the group consisting of aluminum, silicon, A compound composed of one element in the group consisting of boron, carbon, and beryllium, and the compound forming the insulating layer is a compound containing an element selected from the group consisting of aluminum, silicon, boron, carbon, and beryllium Nitride, oxide or carbide.

In an embodiment of the present invention, a device adhesion layer is further included between the high-power electronic device and the first electrode layer for fixing the high-power electronic device on the first electrode layer, and wherein , The device adhesion layer is composed of at least one material selected from the group consisting of indium metal, indium tin alloy, indium silver alloy, indium lead alloy, silver tin alloy, lead tin alloy, gold tin alloy and gold germanium alloy Layer body.

Compared with the prior art, the heat-dissipating electronic device provided by the present invention disposes the second electrode layer on the first electrode layer and expands the distribution range of the first electrode layer on the first surface of the substrate Therefore, the contact area between the substrate and the first electrode layer is increased, which can increase the range of the heat conduction path of the first electrode layer to accelerate the overall heat conduction efficiency, thereby enhancing the stability of the electronic device and prolonging its service life.

1: Electronic device

2, 3, 4: heat-dissipating electronic device

10, 20, 30, 40: substrate

12, 22, 32, 42: high-power electronic components

23, 33, 43: insulation layer

34, 44: conductive heat dissipation layer

20a, 30a: first surface

20b, 30b: second surface

45: component adhesion layer

110: pitch

111, 112: Electrodes

211, 311, 411: first electrode layer

212, 312, 412: second electrode layer

H: heat

The embodiments of the present invention will be described with reference to the drawings as an example:

Figure 1 is a schematic diagram of the structure of a conventional electronic device;

Figure 2 is a schematic diagram of the structure of the heat-dissipating electronic device of the present invention;

Figure 3 is a schematic cross-sectional view of the first example of the heat-dissipating electronic device of the present invention taken along the line A-A in Figure 2;

Figure 4 is a schematic cross-sectional view of the second example of the heat-dissipating electronic device of the present invention taken along the line A-A in Figure 2;

Figure 5 is a schematic cross-sectional view of the third example of the heat-dissipating electronic device of the present invention taken along the line A-A in Figure 2; and

Figure 6 is a schematic cross-sectional view of the heat-dissipating electronic device of the present invention taken along the line B-B in Figure 2.

The following is a specific embodiment to illustrate the implementation of the present invention. Those skilled in the art can easily understand the advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied by other different embodiments, and various details in this specification can also be based on different viewpoints and applications, without departing from the spirit of the present invention. In addition, all ranges and values herein are inclusive and combinable. Any value or point falling within the range described herein, for example, any integer can be used as the minimum or maximum value to derive the lower range and so on.

Please refer to Figures 2 and 3, which are respectively a schematic structural diagram and a cross-sectional schematic diagram of the heat-dissipating electronic device of the present invention. As shown in the figure, the heat-dissipating electronic device 2 of the present invention includes a substrate 20 and a first electrode layer 211. , The second electrode layer 212, the high-power electronic component 22, and the insulating layer 23. In detail, the substrate 20 has a corresponding first surface 20a and a second surface 20b. The first surface 20a is used to carry the high-power electronic component 22, and the first electrode layer 211 is disposed on the high-power electronic component. 22 and the substrate 20 and covering the first surface 20a of the substrate 20, the first electrode layer 211 has a heat dissipation function, and the second electrode layer 212 is provided on the first electrode layer 211 and is connected to the high The power electronic component 22 is electrically connected, and the insulating layer 23 is disposed between the first electrode layer 211 and the second electrode layer 212 and has an electrical isolation function.

Specifically, the present invention is to cover the first surface 20a of the substrate 20 with a large Area of the first electrode layer 211, and the coverage area of the first electrode layer occupies at least one-fifth of the first surface of the substrate, or is completely covered by the first surface 20a of the substrate 20; The second electrode layer 212 provided on the first surface 20a is provided on the first electrode layer 211, and the two are electrically isolated by the insulating layer 23, so that the heat energy H generated by the high-power electronic component 22 can pass through The first electrode layer 211 absorbs and conducts to the substrate 20 to achieve a heat dissipation effect.

Compared with the conventional electronic device, the present invention increases the contact area between the first electrode layer 211 and the substrate 20 by stacking the second electrode layer 212 on top of the first electrode layer 211, and further extends The heat dissipation path of the first electrode layer 211 can thus accelerate the overall heat conduction efficiency of the heat dissipation electronic device 2 and thus can effectively improve the heat accumulation problem of the electronic device.

In the present invention, the "high-power electronic device" refers to an electronic device whose average output rate of energy conversion energy per unit time is higher than 1 watt. It can be a laser device, an active device, a passive device, or a semiconductor device, etc. Unlimited types. In a specific implementation aspect, the high-power electronic device 22 is a laser light emitting device or an insulated gate bipolar transistor device.

Regarding the electrical connection between the high-power electronic component 22 and the first electrode layer 211 and the second electrode layer 212, wire bonding technology or flip chip bonding technology can be used, but is not limited thereto.

In the structure of the heat-dissipating electronic device 2 described above, the first electrode layer 211 and the second electrode layer 212 both use a thermally conductive material with good thermal conductivity, and the thermal conductivity is preferably between 150 and 2000 watts/(m·Krwen) (W/(m‧K)), so that the thermal energy generated by the high-power electronic component 22 is instantly removed by the first electrode layer 211 by conduction, radiation, and convection, so as to prevent the temperature in the device from rising, so when When operating for a long time or under a high power state, it can effectively slow down the speed of heat accumulation in the device, extend the operating time of its electronic components, and avoid the adverse effects of high temperature on the high power electronic components 22.

The layer system of the first electrode layer 211 and the second electrode layer 212 can be prepared by sputtering, evaporation, or electroplating. In a specific embodiment, the first electrode layer 211 and the second electrode layer The material of 212 is at least one material independently selected from the group consisting of titanium, copper, nickel, palladium, platinum, gold, copper-tungsten alloy, and copper-molybdenum alloy.

In addition, the layer structure of the first electrode layer 211 and the second electrode layer 212 includes a structure formed by stacking a plurality of layers, and is not limited to a single layer. In a specific embodiment, the first electrode layer 211 has a three-layer structure, and the second electrode layer 212 has a single-layer structure, and the materials of each layer of the first electrode layer 211 are metal copper and nickel. And gold, the second electrode layer is metallic gold.

In the present invention, the substrate 20 is an electrically insulating layer with heat dissipation performance, and its thermal conductivity is preferably in the range of 100 to 2000 watts/(m‧Kelvin)(W/(m‧K)) , In order to reduce the thermal resistance effect in the heat conduction process.

On the other hand, the selection of materials for each layer in the heat-dissipating electronic device 2 requires consideration of its heat dissipation performance, and also needs to be configured based on the thermal expansion reaction of each layer in response to temperature changes. If it fails to match the thermal expansion of the component, it will cause heat Stress accumulates in the device, causing deformation. Therefore, based on the above factors, the present invention selects the thermal expansion coefficient of the substrate 20 to be smaller than the thermal expansion coefficient of the first electrode layer 211, and matches the thermal expansion changes of the device through the combination of the substrate 20 and the first electrode layer 211, so as to achieve high power During the operation of the electronic component 22, the tensile stress generated by the thermal energy of the high-power electronic component 22 is offset with the compressive stress of the substrate 20, so as to prevent the heat-dissipating electronic device 2 from thermally deforming.

In a specific embodiment, the substrate 20 may be selected from boron nitride substrates, aluminum nitride substrates, silicon carbide substrates, ceramic (such as aluminum oxide, silicon nitride, silicon carbide, beryllium oxide) substrates, and One of the group consisting of diamond substrates, and among them, aluminum nitride has high thermal conductivity (thermal conductivity of about 150 to 200 watts/(m‧Krvin)) and low thermal expansion coefficient (4.3ppm/K) Because of its characteristics, aluminum nitride is the first choice for substrate preparation.

In the present invention, the lines of insulating layer 23 for electrically insulating the first electrode layer 211 and the second electrode layer 212, so the insulating layer 23 of resistivity 10 ^ohms Optional lines / cm (Ω / cm ), and the energy gap is better than 3 electron volts (eV). In a specific embodiment of the present invention, the thickness of the insulating layer is greater than 0.1 μm.

In addition, in order to avoid affecting the heat dissipation performance of the device, the thermal conductivity of the insulating layer 23 is preferably in the range of 170 to 2000 watts/(m‧Kelvin)(W/(m‧K)), and is not limited to it The configuration range on the first electrode layer 211.

In a specific embodiment, the insulating layer 23 includes a compound composed of one element selected from the group consisting of aluminum, silicon, boron, carbon, and beryllium.

In another embodiment, the compound forming the insulating layer 23 is a nitride, oxide, or carbide containing an element selected from the group consisting of aluminum, silicon, boron, carbon, and beryllium. In detail, the compound of the insulating layer 23 is particularly preferably aluminum nitride, carbon nitride, boron nitride, ceramic materials, composite materials or diamond materials; in addition, the ceramic materials include alumina, silicon nitride, Silicon carbide or beryllium oxide. In addition, the composite material includes materials containing nanocarbon.

As shown in FIG. 4, in a specific embodiment, the heat-dissipating electronic device 3 of the present invention further includes a conductive heat-dissipating layer 34. In this embodiment, the heat-dissipating electronic device 3 includes a substrate 30, a first electrode layer 311, a second electrode layer 312, a high-power electronic component 32, an insulating layer 33, and a conductive heat-dissipating layer 34, wherein the conductive heat-dissipating layer 34 also covers a large area on the second surface 30b of the substrate 30, and is similar to the configuration of the first electrode layer 311 Symmetry to avoid warping of the substrate 30 due to thermal stress.

In the structure of the above-mentioned heat-dissipating electronic device 3, the conductive heat-dissipating layer 34 is a layer with heat-dissipating performance, and its thermal conductivity is between 150 and 2000 watts/(m‧Kelvin)(W/(m‧K) )) The range is better.

In a specific embodiment, when the layer structure of the first electrode layer 311 is a structure formed by stacking a plurality of layers, the layer structure, thickness, and material of the conductive heat dissipation layer 34 are the same as those of the first electrode. The layers are the same. With the symmetrical configuration of the conductive heat dissipation layer 34, the heat transfer efficiency of the substrate 30 can be further accelerated, the warpage caused by the accumulation of thermal stress can be reduced, and the interlayer adhesion drop caused by the warpage and the light emission of high-power electronic components can be solved. The problem of collimation deviation.

As shown in FIG. 5, in another embodiment, the heat-dissipating electronic device 4 of the present invention further includes a component adhesion layer 45. In this embodiment, the heat-dissipating electronic device 4 includes a substrate 40, a first electrode layer 411, a second electrode layer 412, a high-power electronic component 42, an insulating layer 43, a conductive heat-dissipating layer 44, and the first electrode layer The device adhesive layer 45 between 411 and the high-power electronic device 42. The device adhesion layer 45 is used to adhere the high-power electronic device 42 to the first electrode layer 411. For the configuration of the device adhesion layer, please refer to the Republic of China Patent No. I638433, and the entire disclosure can also be cited in the present invention.

Figure 6 is a schematic cross-sectional view taken along line BB in Figure 2. In a preferred embodiment, one side edge of the device adhesive layer 45 extends beyond the edge of the first electrode layer 411 and partially covers the The side of the first electrode layer 411, more specifically, when the device adhesion layer 45 is disposed, except on the surface of the first electrode layer 411, it will further extend to the side of the first electrode layer 411 and partially cover the first electrode The side of layer 411. Based on the component adhesive layer 45 has no stop point formed on the surface of the first electrode layer 411, so the flatness problem caused by the edge effect of the conventional device can be avoided.

In the structure of the heat-dissipating electronic device 4, the device adhesion layer 45 is used to bond the high-power electronic device 42 on the first electrode layer 411, and is selected from the group consisting of indium metal, indium tin alloy, indium silver alloy, and indium. A layer of at least one material from the group consisting of lead alloy, silver-tin alloy, lead-tin alloy, gold-tin alloy, and gold-germanium alloy, which can be prepared by electroplating, and also has the functions of conducting and dissipating heat.

In summary, the heat-dissipating electronic device provided by the present invention, through the arrangement of stacking the second electrode on top of the first electrode layer, enables the first electrode layer to be fully integrated as a heat dissipation path for high-power electronic components And because the range of the first electrode layer is enlarged, the contact area between the first electrode layer and the substrate is increased, and the heat dissipation path of the first electrode layer is further extended, which can accelerate the overall heat conduction efficiency of the heat-dissipating electronic device, The temperature change range of the high-power electronic component does not exceed 40°C, thereby improving the stability of the electronic device and prolonging its service life.

In addition, the symmetrical arrangement of the conductive heat dissipation layer and the first electrode layer also accelerates the heat transfer efficiency of the substrate, reduces the warpage of the substrate due to the accumulation of thermal stress, and can overcome the interlayer adhesion force caused by the warpage. The problem of degradation and deviation of light-emitting collimation of high-power electronic components.

The above-mentioned embodiments are only illustrative descriptions, and are not used to limit the present invention. Anyone who is familiar with this technique can modify and change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the rights of the present invention is defined by the scope of the patent application attached to the present invention. As long as it does not affect the effect and implementation purpose of the present invention, it should be covered by the disclosed technology Content.

2: Heat-dissipating electronic device

20: substrate

20a: first surface

20b: second surface

211: first electrode layer

212: second electrode layer

22: High-power electronic components

23: Insulation layer

Claims (9)

A heat-dissipating electronic device includes: a substrate with corresponding first and second surfaces; a first electrode layer with heat dissipation function covering the first surface of the substrate, and the thermal expansion coefficient of the substrate Is smaller than the thermal expansion coefficient of the first electrode layer; high-power electronic components are arranged on the first electrode layer; the second electrode layer is arranged on the first electrode layer and is electrically connected to the high-power electronic components Connection; and an insulating layer with electrical isolation function is provided between the first electrode layer and the second electrode layer. According to the heat-dissipating electronic device described in claim 1, wherein, the first electrode layer is a single layer body or a plurality of layers stacked on top of each other. For the heat-dissipating electronic device described in item 1 of the scope of patent application, wherein the thermal conductivity of the first electrode layer is 150 to 2000 watts/(m‧Kelvin)(W/(m‧K)). The heat-dissipating electronic device described in claim 1, wherein the materials forming the first electrode layer and the second electrode layer are independently selected from titanium, copper, nickel, palladium, platinum, gold, copper and tungsten At least one of alloys and copper-molybdenum alloys. According to the heat-dissipating electronic device described in claim 1, wherein the substrate is a boron nitride substrate, an aluminum nitride substrate, a silicon carbide substrate, a ceramic substrate or a diamond substrate. The heat-dissipating electronic device described in claim 1, wherein the compound forming the insulating layer is a nitride or oxide containing an element selected from the group consisting of aluminum, silicon, boron, carbon, and beryllium Or carbide. According to the heat-dissipating electronic device described in claim 1, wherein, a conductive heat-dissipating layer is further included on the second surface of the substrate. The heat-dissipating electronic device described in claim 1, wherein a device adhesion layer is included between the high-power electronic device and the first electrode layer for fixing the high-power electronic device to the first electrode layer. One electrode layer. The heat-dissipating electronic device described in item 8 of the scope of patent application, wherein the component adhesion layer is selected from the group consisting of indium metal, indium tin alloy, indium silver alloy, indium lead alloy, silver tin alloy, lead tin alloy, gold tin alloy And a layer composed of at least one material in the group consisting of gold-germanium alloy.

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