TWI723688B - Method for manufacturing thin wire - Google Patents
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- TWI723688B TWI723688B TW108146621A TW108146621A TWI723688B TW I723688 B TWI723688 B TW I723688B TW 108146621 A TW108146621 A TW 108146621A TW 108146621 A TW108146621 A TW 108146621A TW I723688 B TWI723688 B TW I723688B
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Abstract
Description
本發明涉及一種線路的加工方法,尤指一種在薄片元件上製造線路的薄型線路的加工方法。 The invention relates to a processing method of a circuit, in particular to a processing method of a thin circuit for manufacturing a circuit on a sheet element.
雷射加工是利用光學系統聚焦形成高功率的雷射光束,並將雷射光束投射至加工物件,使得雷射光束對加工物件進行如標記、切割、刻劃、刻槽、除料等的雷射加工作業。 Laser processing is the use of an optical system to focus and form a high-power laser beam, and project the laser beam to the processed object, so that the laser beam can mark, cut, scribe, groove, and cut the processed object. Shot processing operations.
其中,目前利用雷射加工製造薄型加工物件時,是先將一黏貼膜貼合於一薄型加工物件的一側,隨後,利用雷射切割機構對薄型加工物件投射雷射光束以除去薄型加工物件的欲去除部位,而當薄型加工物件的欲去除部位全部被雷射光束去除時,薄型加工物件的外觀輪廓會改變,使薄型加工物件只剩下薄型加工物件的保留部位,此時,黏貼膜的部分區域不會被薄型加工物件覆蓋。 Among them, when laser processing is used to manufacture thin processed objects, an adhesive film is first attached to one side of a thin processed object, and then a laser beam is projected on the thin processed object by a laser cutting mechanism to remove the thin processed object When all the parts to be removed of the thin processed object are removed by the laser beam, the appearance and contour of the thin processed object will change, leaving only the reserved part of the thin processed object. At this time, stick the film Part of the area will not be covered by thin processed objects.
然而,當薄型加工物件的除去部位全部都被雷射光束除去時,雷射光束會投射到黏貼膜的部分區域,一旦雷射光束長時間投射到黏貼膜,黏貼膜會產生碳化現象而形成黑色粉塵,而黑色粉塵一旦沾黏到薄型加工物件的保留部位,則會影響薄型加工物件保留部位的機械性質(如:導電性),相對就會減少加工物件保留部位的使用壽命。 However, when all the removed parts of the thin processed object are removed by the laser beam, the laser beam will be projected to a part of the adhesive film. Once the laser beam is projected on the adhesive film for a long time, the adhesive film will be carbonized and become black. Dust, and once the black dust adheres to the reserved part of the thin processed object, it will affect the mechanical properties (such as conductivity) of the reserved part of the thin processed object, and will relatively reduce the service life of the reserved part of the processed object.
本發明之主要目的在於提供一種薄型線路的加工方法,在過程中透過加入利用材料之間的結合強度的差異的步驟來製造薄片元件上的線路,減少完全使用雷射製造薄片元件時所可能產生的問題。 The main purpose of the present invention is to provide a thin circuit processing method, in the process by adding the use of the difference in the bonding strength between the materials to make the circuit on the sheet component, reducing the possibility of using laser to manufacture the sheet component. The problem.
為達到上述目的,本發明包含:一種薄型線路的加工方法,包含:一供料步驟、一線路成型步驟、一黏合步驟、一變質步驟以及一分離步驟。 In order to achieve the above objective, the present invention includes: a processing method of a thin circuit, including: a feeding step, a circuit forming step, a bonding step, a deterioration step, and a separation step.
於該供料步驟中提供一第一加工件,該第一加工件包含一導電層以及一第一膠膜層,該第一膠膜層以一第一接合強度連接於該導電層的一側;於該線路成型步驟中沿著一加工路徑來去除該第一加工件的一部份導電層,使得該導電層形成彼此分隔的一線路部以及一餘料部。 In the feeding step, a first processed part is provided, the first processed part includes a conductive layer and a first adhesive film layer, the first adhesive film layer is connected to one side of the conductive layer with a first bonding strength In the circuit forming step, a part of the conductive layer of the first processed part is removed along a processing path, so that the conductive layer forms a circuit portion and a remaining material portion that are separated from each other.
於該黏合步驟中將一第二膠膜層連接於該導電層的該線路部以及該餘料部,使得該第二膠膜層以一第二接合強度連接於該導電層的另一相對側。 In the bonding step, a second adhesive film layer is connected to the circuit portion and the remaining material portion of the conductive layer, so that the second adhesive film layer is connected to the other opposite side of the conductive layer with a second bonding strength .
於該變質步驟中利用一光源加工該第一膠膜層或第二膠膜層的其中一者形成一受加工膠膜層使得該受加工膠膜層連接該線路部或該餘料部其中一者的接合強度受到改變形成一第三接合強度,而該受加工膠膜層的其餘部分維持原始接合強度來連接於該線路部或該餘料部的其中另一者。 In the modification step, a light source is used to process one of the first adhesive film layer or the second adhesive film layer to form a processed adhesive film layer so that the processed adhesive film layer is connected to one of the circuit portion or the remaining material portion The bonding strength of the other is changed to form a third bonding strength, and the remaining part of the processed adhesive film layer maintains the original bonding strength to be connected to the other of the circuit portion or the remaining material portion.
於該分離步驟將該第一膠膜層與該第二膠膜層分別朝向一彼此遠離的分離方向移動,使該第一膠膜層或該第二膠膜層的其中之一帶領該線路部從另一膠膜層及該餘料部分離。 In the separating step, the first adhesive film layer and the second adhesive film layer are respectively moved toward a separation direction away from each other, so that one of the first adhesive film layer or the second adhesive film layer leads the circuit portion Separate from the other film layer and the remaining material part.
改變受加工膠膜層的機構種類上,於一較佳實施例中,該薄型線路的加工方法是透過雷射機構,加工該導電層及改變該受加工膠膜層的黏性。 Regarding the type of mechanism for changing the processed adhesive film layer, in a preferred embodiment, the processing method of the thin circuit is to process the conductive layer through a laser mechanism and change the viscosity of the processed adhesive film layer.
關於配合的硬體部分:於一較佳實施例中,於進行該線路成型步驟是提供一位置固定的雷射機構以及一能帶動該第一加工件進行移動的送料機 構,該雷射機構具有至少一可偏擺的雷射頭來於該線路成型步驟中加工該導電層,而當該雷射機構對該第一加工件進行加工時,該送料機構能繼續帶動該第一加工件進行移動。 Regarding the mating hardware part: In a preferred embodiment, the circuit forming step is to provide a fixed position laser mechanism and a feeder that can drive the first workpiece to move The laser mechanism has at least one deflectable laser head to process the conductive layer in the circuit forming step, and when the laser mechanism processes the first processed part, the feeding mechanism can continue to drive The first workpiece is moved.
配合前述硬體,於該實施例中,該線路成型步驟之前進一步包含:一進料設定步驟以及一路徑規劃步驟;於該進料設定步驟中,由該送料機構帶動該第一加工件以一移動速度進行移動,而該送料機構產生一對應於該移動速度的移動訊息,並將該移動訊息傳遞至一運算機構;於該路徑規劃步驟中,將該加工路徑提供給該運算機構,該運算機構將該加工路徑配合該移動訊息進行演算而形成一用以供該雷射機構於該線路成型步驟使用的加工資訊以及一供該雷射機構於該變質步驟使用的變質訊息,並傳送至該雷射機構。 In conjunction with the aforementioned hardware, in this embodiment, the circuit forming step further includes: a feeding setting step and a path planning step; in the feeding setting step, the feeding mechanism drives the first processed part to The moving speed moves, and the feeding mechanism generates a moving message corresponding to the moving speed, and transmits the moving message to an arithmetic mechanism; in the path planning step, the processing path is provided to the arithmetic mechanism, and the calculation The mechanism calculates the processing path with the movement information to form processing information used by the laser mechanism in the circuit forming step and a deterioration message used by the laser mechanism in the deterioration step, and sent to the Laser mechanism.
本發明另提供一種薄型線路的加工方法,包含:一供料步驟、一線路成型步驟、一膠膜提供步驟、一膠膜黏合步驟以及一分離步驟;其中,由於該供料步驟及該線路成型步驟及該分離步驟與前述方法相同,故在此不加以贅述。 The present invention also provides a method for processing a thin circuit, including: a feeding step, a circuit forming step, an adhesive film providing step, an adhesive film bonding step, and a separating step; wherein, due to the feeding step and the circuit forming step The steps and the separation step are the same as the aforementioned method, so they will not be repeated here.
於該膠膜提供步驟中,提供一用以連接該導電層的第二膠膜層,該第二膠膜層的一部份形成一具有一第二接合強度的第一黏合區,其餘部分透過一光源加工形成一具有一第三接合強度的第二黏合區。 In the step of providing the adhesive film, a second adhesive film layer for connecting the conductive layer is provided, a part of the second adhesive film layer forms a first bonding area with a second bonding strength, and the remaining part penetrates A light source is processed to form a second bonding area with a third bonding strength.
於該膠膜黏合步驟中,將該第二膠膜層連接於該導電層的另一相對側,並使該第一黏合區連接於該線路部或該餘料部的其中一者,該第二黏合區連接於該線路部或該餘料部的其中另一者。 In the adhesive film bonding step, the second adhesive film layer is connected to the other opposite side of the conductive layer, and the first bonding area is connected to one of the circuit portion or the remaining material portion, the first The two bonding areas are connected to the other of the line part or the remaining material part.
其餘改變該第一、第二膠膜層的性質(產生第二黏合區)的方式及機構可參考前述說明,在此不加以贅述。 For other methods and mechanisms for changing the properties of the first and second adhesive film layers (generating the second adhesive zone), refer to the foregoing description, and will not be repeated here.
由以上說明可知,本發明的特點在於:透過第二膠膜層與第一膠膜層上的導電層上的不同部位(線路部、餘料部)之間的連接強度的差異,讓導電層上欲保留的部分與第一膠膜層之間的連接強度大於導電層上欲保留的部分與第二膠膜層之間的連接強度,而導電層上欲去除的部分與第一膠膜層之間的連接強度小於導電層上欲去除的部分與第二膠膜層之間的連接強度,使得將第二膠膜層與導電層分離時,導電層上欲去除的部分將與第二膠膜層一同與第一膠膜層分離,而其殘留的部分在第一膠膜層上構成線路。 It can be seen from the above description that the feature of the present invention is that the difference in the connection strength between the second adhesive film layer and the conductive layer on the first adhesive film layer (circuit part, residual material part) makes the conductive layer The connection strength between the part to be retained and the first adhesive film layer is greater than the connection strength between the part to be retained on the conductive layer and the second adhesive film layer, and the part to be removed on the conductive layer and the first adhesive film layer The connection strength between the conductive layer is less than the connection strength between the part to be removed on the conductive layer and the second adhesive film layer, so that when the second adhesive film layer is separated from the conductive layer, the part to be removed on the conductive layer will be with the second adhesive film layer. The film layer is separated from the first adhesive film layer together, and the remaining part forms a circuit on the first adhesive film layer.
11:第一供料滾筒 11: The first feed roller
12:第二供料滾筒 12: The second feed roller
13:支撐檯面 13: Support table
14:成品接收滾筒 14: Finished product receiving roller
2:供料機構 2: Feeding mechanism
21:原料滾筒 21: Raw material drum
22:回收滾筒 22: recycling drum
3:線路成型機構 3: Line forming mechanism
31:第一雷射機構 31: The first laser mechanism
310:雷射頭 310: Laser head
4:變質機構 4: Deteriorating institutions
41:第二雷射機構 41: The second laser mechanism
5:清理機構 5: Clean up institutions
51:吹風抽氣機台 51: Blowing and exhausting machine
6:運算機構 6: Computing mechanism
61:電腦 61: Computer
S1:供料步驟 S1: Feeding step
S21:進料設定步驟 S21: Feed setting steps
S22:路徑規劃步驟 S22: Path planning steps
S3:線路成型步驟 S3: circuit forming steps
S4A:黏合步驟 S4A: bonding step
S4B:膠膜提供步驟 S4B: Film supply steps
S5A:變質步驟 S5A: Deteriorating step
S5B:膠膜黏合步驟 S5B: Adhesive film bonding step
S6:分離步驟 S6: separation step
7:導電層 7: Conductive layer
71:加工路徑 71: Processing path
7a:線路部 7a: Line Department
7b:餘料部 7b: Remaining material department
8:第一膠膜層 8: The first film layer
9:第二膠膜層 9: The second film layer
9a:第一接合區 9a: The first junction zone
9b:第二接合區 9b: The second junction zone
9c:第一黏合區 9c: The first bonding area
9d:第二黏合區 9d: The second bonding area
91:膜片 91: diaphragm
92:膠體 92: colloid
D:方向 D: direction
P1:第一加工件 P1: The first processed part
P2:第二加工件 P2: The second processing part
P3:第三加工件 P3: The third machining part
圖1為本發明薄型線路的加工方法於一較佳實施例中的流程示意圖;圖2為利用圖1的實施例的裝置示意圖;圖3A為圖1中供料步驟的示意圖;圖3B為圖1中線路成型步驟的示意圖;圖3C為圖1中黏合步驟的示意圖;圖3D為圖1中變質步驟的示意圖;圖3E為圖1中分離步驟的示意圖;圖4為本發明薄型線路的加工方法於另一實施例中的第二膠膜層的示意圖。 Fig. 1 is a schematic flow diagram of a preferred embodiment of a method for processing a thin circuit of the present invention; Fig. 2 is a schematic diagram of an apparatus using the embodiment of Fig. 1; Fig. 3A is a schematic diagram of the feeding step in Fig. 1; Fig. 3B is a diagram Fig. 3C is a schematic diagram of the bonding step in Fig. 1; Fig. 3D is a schematic diagram of the deterioration step in Fig. 1; Fig. 3E is a schematic diagram of the separation step in Fig. 1; Fig. 4 is the processing of the thin circuit of the present invention A schematic diagram of the second adhesive film layer in another embodiment of the method.
圖5為本發明薄型線路的加工方法於另一實施例中的流程示意圖;圖6A為圖5中膠膜變質步驟的示意圖;圖6B為圖5中膠膜黏合步驟的示意圖。 5 is a schematic flow diagram of another embodiment of the processing method of the thin circuit of the present invention; FIG. 6A is a schematic diagram of the adhesive film deterioration step in FIG. 5; FIG. 6B is a schematic diagram of the adhesive film bonding step in FIG. 5.
茲為便於更進一步對本發明之構造、使用及其特徵有更深一層明確、詳實的認識與瞭解,爰舉出較佳實施例,配合圖式詳細說明如下:請參照圖1、2所示,於一較佳實施例中,本發明薄型線路的加工方法包含:一供料步驟S1,一進料設定步驟S21、一路徑規劃步驟S22、一線路成型步驟S3、一黏合步驟S4A、一變質步驟S5A以及一分離步驟S6;而在本實施例中應用該等步驟的機台,包含:一送料機構、一供料機構2、一作為一線路成型機構3的第一雷射機構31、一作為一變質機構4的第二雷射機構41、一作為清理機構5的吹風抽氣機台51以及一作為運算機構6的電腦61。
In order to facilitate a deeper understanding and understanding of the structure, use and characteristics of the present invention, a preferred embodiment is given, and the detailed description with the drawings is as follows: Please refer to Figures 1 and 2 as shown in In a preferred embodiment, the processing method of the thin circuit of the present invention includes: a feeding step S1, a feeding setting step S21, a path planning step S22, a circuit forming step S3, a bonding step S4A, and a modification step S5A And a separation step S6; and the machine using these steps in this embodiment includes: a feeding mechanism, a
該送料機構電性連接該電腦61(圖未視),在組成上,如圖2所示,該送料機構,包含:一第一供料滾筒11、一第二供料滾筒12、一支撐檯面13以及一成品接收滾筒14;該第一供料滾筒11、該第二供料滾筒12安裝於該支撐檯面13上的一側,該成品接收滾筒14安裝於該支撐檯面13上的另一側;該第一供料滾筒11用以提供一導電層7,該第二供料滾筒12用以提供一具有撓性的第一膠膜層8,其中,該第一膠膜層8與該導電層7於該支撐檯面13上彼此連接(詳細方式不限)而形成沿著該支撐檯面13於一方向D進行移動的第一加工件P1(見圖3A),而該成品接收滾筒14透過提供一張力而帶動該第一加工件P1及其後續的加工產物沿著該方向D以一移動速度進行移動,並於加工完成後接收加工完成品;其中,本發明沒有限制如何接合該第一膠膜層8及該導電層7,可以是透過該第一膠膜層8本身可能具有的黏性,或是在該第一膠膜層8與該導電層7之間塗上黏膠等,可以依照製作需求進行變更。
The feeding mechanism is electrically connected to the computer 61 (not shown in the figure). In terms of composition, as shown in FIG. 2, the feeding mechanism includes: a
該等供料滾筒(11、12)、該第一雷射機構31、該吹風抽氣機台51及該第二雷射機構41電性連接該電腦61(圖未示),如圖2所示,上述元件依序位
於該支撐檯面13上,且兩雷射機構(31、41)及清理機構5位於該等供料滾筒(11、12)及該成品接收滾筒14之間。
The supply drums (11, 12), the
該第一雷射機構31用對該導電層7進行加工,具有至少一可偏擺的雷射頭310;該吹風抽氣機台51用以提供一朝向該導電層7釋放的氣體並帶走該第一雷射機構31加工該導電層7時所產生的殘留物;該供料機構2用以提供一連接至該導電層7上的第二膠膜層9,包含一提供該第二膠膜層9的原料滾筒21以及一用以接收經過加工的該第二膠膜層9的回收滾筒22,該第二雷射機構41位於該原料滾筒21及該回收滾筒22之間;該第二雷射機構41用以對該第二膠膜層9進行加工,使受加工處的該第二膠膜層9的性質變質並改變該第二膠膜層9與該導電層7之間的接合強度(詳細後述)。
The
關於各步驟的詳細說明,請參考圖2及圖3A至圖3E所示;請參考圖3A所示,於該供料步驟S1中,將來自該第一供料滾筒11所提供的該導電層7與該第二供料滾筒12所提供的該第一膠膜層8於該支撐檯面13上互相連接而形成該第一加工件P1,且其中,該第一膠膜層8以一第一接合強度連接於該導電層7靠近該支撐檯面13的一側。
For a detailed description of each step, please refer to FIG. 2 and FIG. 3A to FIG. 3E; please refer to FIG. 3A, in the feeding step S1, the conductive layer provided by the
請參考圖2及圖3B,當該第一加工件P1受到帶動而移動到該第一雷射機構31處時,進行該線路成型步驟S3;於該線路成型步驟S3中,該第一雷射機構31透過該雷射頭310所投射的雷射對該第一加工件P1上的該導電層7的一部份進行裁切加工,進而使該導電層7形成彼此分隔的一線路部7a以及一餘料部7b,且其中,在本實施例中,當進行該線路成型步驟S3時,該送料機構仍能繼續帶動該第一加工件P1進行移動(理由後述)。
2 and 3B, when the first workpiece P1 is driven to move to the
如圖2所示,在本實施例中,為了決定該線路成型步驟S3中該第一雷射機構31的雷射光的路徑並配合送料機構提供的移動速度進行加工,在進行該線路成型步驟S3前,將進行該進料設定步驟S21及該路徑規劃步驟S22;於該進料設定步驟S21中,當該送料機構帶動該第一加工件P1以該移動速度進行移動時,該送料機構將產生並向該運算機構6傳遞一對應於該移動速度的移動訊息。
As shown in FIG. 2, in this embodiment, in order to determine the path of the laser light of the
於該路徑規劃步驟S22中,將該加工路徑71提供給該運算機構6,該運算機構6將該加工路徑71配合該移動訊息進行演算而形成一用以供該第一雷射機構31將於該線路成型步驟S3中所要使用的加工資訊以及一供後續的該第二雷射機構41於該變質步驟S5A使用的變質訊息,並傳送至該等雷射機構(31、41)。
In the path planning step S22, the
其中,本發明並沒有限制如何將該加工路徑71提供給該運算機構6的方式以及進行該進料設定步驟S21及該路徑規劃步驟S22的詳細時間點,只要在該線路成型步驟S3前將該加工資訊提供給該第一雷射機構31,在該變質步驟S5A前將該變質訊息提供給該第二雷射機構41即可;該加工資訊的來源可以是在既有的電子元件如電腦61上建立,或是在其他電子元件上產生並輸入至運算機構6等等習知的產生方式或來源,本案並沒有限制。
Wherein, the present invention does not limit how to provide the
如圖2及圖3C所示,於該黏合步驟S4A中,於該支撐檯面13上,將來自該原料滾筒21所提供的該第二膠膜層9以一第二接合強度連接於該導電層7的另一側而產生一第二加工件P2,並使得該第二膠膜層9同時連接於該線路部7a以及該餘料部7b上;其中,當該第二膠膜層9連接於該導電層7時,該第二膠膜層9同時仍受到該回收滾筒22帶動。
As shown in FIGS. 2 and 3C, in the bonding step S4A, on the support table 13, the second
再來,如圖2及圖3D所示,當該第二加工件P2受到成品接收滾筒14帶動而移動到該第二雷射機構41處時,啟動該第二雷射機構41進行該變質步驟S5A來產生一第三加工件P3。
Furthermore, as shown in FIGS. 2 and 3D, when the second processed part P2 is driven by the finished
於該變質步驟S5A中,該第二雷射機構41配合該變質訊息來加工該第二膠膜層9區域,使該第二膠膜層9的局部位置的性質產生改變並區分出為未受改變的第一接合區9a及受改變後的第二接合區9b(圖3D中的黑色部分),並改變連接在該第二接合區9b的該線路部7a與該第二接合區9b之間的接合強度,使該處採用一接合強度介於該第一強度與該第二強度之間的第三接合強度來連接該線路部7a,而另一部分仍維持原始接合強度(該第二接合強度)來連接於該餘料部7b。
In the deterioration step S5A, the
如圖2及圖3E所示,當該第三加工件P3受到成品接收滾筒14繼續帶動而移動到該支撐檯面13的尾端時進行該分離步驟S6,於該分離步驟S6中,由於該成品接收滾筒14與該回收滾筒22分別位於該支撐檯面13的相反兩側,使得該第三加工件P3的該第一膠膜層8與該第二膠膜層9彼此分離。
As shown in Figures 2 and 3E, when the third workpiece P3 is continuously driven by the finished
其中,在分離時,因第一膠膜層8與該線路部7a之間的該第一接合強度大於該線路部7a與該第二接合區9b之間的該第三接合強度,但第一膠膜層8與該餘料部7b之間小於餘料部7b與第一接合區9a之間的該第二接合強度,使得該第一膠膜層8與該第二膠膜層朝向彼此遠離的分離方向移動時,該第一膠膜層8帶領該線路部7a從該第二接合區9b分離而朝向該成品接收滾筒14移動,該第二膠膜層9帶領該餘料部7b從該第一膠膜層8分離而朝向該回收滾筒22移動,進而讓該成品接收滾筒14所接收的該第一膠膜層8及該線路部7a形成一薄型電路。
Wherein, during separation, the first bonding strength between the first
由以上說明可知,該薄型線路的加工方法的特點在於:透過圖3D的所示結構中第二膠膜層9與第一膠膜層8上的導電層7上的不同部位(線路部7a、餘料部7b)之間的連接強度的差異,當中間的導電層7上欲保留的部分與第一膠膜層8之間的連接強度大於導電層7上欲保留的部分與第二膠膜層9之間的連接強度,而導電層7上欲去除的部分與第一膠膜層8之間的連接強度小於導電層7上欲去除的部分與第二膠膜層9之間的連接強度時,將第二膠膜層9與導電層7分離後,導電層7上欲去除的部分將與第二膠膜層9一同與第一膠膜層8分離,而其殘留的部分在第一膠膜層8上,與該第一膠膜層8共同構成薄型線路。
As can be seen from the above description, the feature of the thin circuit processing method is that it penetrates through different parts of the
補充說明,本發明並沒有限定應用上述薄型線路的加工方法的裝置的硬體設備種類,於其他實施例中,該第一雷射機構31可以改為具有可以移動的雷射加工頭的加工機;此外,在其他實施例中該清理機構5亦可以是改用透過具有黏膠的滾筒,透過黏膠的黏性來清除加工時所產生的殘留物(該黏膠與導電層7之間的接合強度小於導電層7與第一膠膜層8之間的接合強度)。
In addition, the present invention does not limit the type of hardware equipment of the device applying the above-mentioned thin line processing method. In other embodiments, the
該變質步驟S5A的作用對象,於本發明的其他實施例中,可先如前述圖3A至圖3C中製造該第二半成品P2後,改針對圖3C中的該第一膠膜層8進行該變質步驟S5A。
The target of the modification step S5A, in other embodiments of the present invention, after the second semi-finished product P2 is manufactured as described above in FIGS. 3A to 3C, the modification is performed on the first
關於該等膠膜層(8、9)的詳細樣態,可以是如圖3C至3E中的單一的固態撓性膠膜,也可以是圖4般由固態的撓性膜片91配合塗佈在該膜面上的液狀膠體92構成。
Regarding the detailed aspects of the adhesive film layers (8, 9), it can be a single solid flexible adhesive film as shown in Figures 3C to 3E, or it can be coated with a solid
於上述加工方法中,該等膠膜層(8、9)的種類並沒有限制,其可以為透過該第二雷射機構41透過加熱而變質的膠膜,或者可以為透過特定波長(如紫外線)的光化學反應來改變其性質的膠膜(此種實施例中,該變質機構4可變
更為其他種類的光源,如紫外線照射機(要另外配合遮罩等)或紫外線雷射等(圖未示));該等膠膜層8、9可採用變質後降低接合強度(或黏性)的材料,或是變質後能增加接合強度(或黏性)的材料進行黏合,如此一來,在不同實施例中透過膠料性質的不同,可以透過互換該第二、第三接合強度的相對大小關係來決定該分離步驟S6後附著在不同膠膜層上(8、9)的是該線路部7a或是該餘料部7b。
In the above-mentioned processing method, the types of the adhesive film layers (8, 9) are not limited. They can be adhesive films that pass through the
由以上說明可知,由於膠料的性質以及變質的對象沒有限制,本發明所提供的加工方法可以依照加工需求(例如機台性能的限制,或是精密度要求)來調整個步驟之間的順序,例如:為了對準該變質步驟S5A中受到加工的該膠膜層(8或9)的變質範圍與該線路部7a或該餘料部7b的位置時,可以調整加工順序,讓前述該變質步驟S5A於該黏合步驟S4A之後進行;為避免進行變質步驟S5A時影響到另一膠膜層,於一類實施例中可以調整加工順序及加工對象,使得該變質步驟S5A調整於該黏合步驟S4A之前進行。
As can be seen from the above description, due to the nature of the rubber material and the object of deterioration, the processing method provided by the present invention can be adjusted according to the processing requirements (such as machine performance limitations or precision requirements) to adjust the sequence between the steps For example, in order to align the deterioration range of the adhesive film layer (8 or 9) processed in the deterioration step S5A with the position of the
請參考圖5所示,由於本發明並沒有限制如何使得該第一膠膜層8、該導電層7與該第二膠膜層9之間是如何形成圖3d的該第三加工件P3,因此,在本發明的另一實施例中,可以修改加工該第二膠膜層9的時機,而在該線路成型步驟S3後進行一膠膜提供步驟S4B及一膠膜黏合步驟S5B,然後再透過進行該分離步驟S6來產生薄型線路,關於該膠膜提供步驟S4B及該膠膜黏合步驟S5B的詳細說明如下:請參考圖6A所示,於該膠膜提供步驟S4B中,提供該第二膠膜層9,其該變質機構4(如前述第二雷射機構41或應用紫外線的機構)配合該移動訊息及該加工路徑71加工該第二膠膜層9上的一部份範圍,使提供的該第二膠膜層9
產生而具有一具有該第三接合強度的第一黏合區9c(如圖中黑色部分),其餘部分產生而具有一具有該第二接合強度的第二黏合區9d。
Please refer to FIG. 5, because the present invention does not limit how to form the third processed part P3 of FIG. 3d between the first
然後,再如圖6B所示,於膠膜黏合步驟S5B中,將該第二膠膜層9連接於該導電層7,並使該第一黏合區9c連接該線路部7a,該第二黏合區9d連接該餘料部7b,進而產生如圖3D的狀態,以便於後續的分離步驟S6中產生薄型電路。
Then, as shown in FIG. 6B, in the adhesive film bonding step S5B, the second
其中,對於如何使該第一黏合區9c與線路部7a、第二黏合區9d與該餘料部7b的位置對應並結合的方式,可以透過配合該送料機構的該移動速度及該供料機構2的供料速度,使得該第一加工件P1受到該成品接收滾筒14所帶動的速度與該第二膠膜層9受到該回收滾筒22所帶動的速度互相對應即可,詳細的兩第一膠膜層8之間的對位方式可以參考現有技術。
Wherein, how to make the position of the
一樣,因為沒有限定改變該第一膠膜層8的性質的時機,故於其他實施例中,可以先產生如圖6A中具有類似於該等黏合區9c、9d的兩種黏合區結構的第一膠膜層8後,再進行該線路成型步驟S3,然後直接將該第二膠膜層9貼附在該導電層7上後製成類似圖3D中,導電層7受到一經過變質而具有不同連接區的膠膜層以及另一未經過任何加工的膠膜層兩者夾合的結構,然後直接分離該第二膠膜層9與該第一膠膜層8來製成產品。
Similarly, because there is no limitation on the timing of changing the properties of the first
綜合以上說明可知,因為沒有特別限定如何製造出如圖3D中的結構的方式,只要有透過該線路成型機構3於導電層7上形成該線路部7a及該餘料部7b、該變質機構4改變該等膠膜層8、9的其中之一部分區域的性質,並將兩膠膜層8、9黏合於導線層7的不同側,且膠膜層8、9上變質的部分對應該線路部7a或該餘料部7b即可,因此,在不同的實施例中,可以依照需求變更變質機構4的
加工對象,或者是變更變質機構4作用的加工時機或變質步驟S5A與線路成型步驟S3的時機,來減少利用雷射對產品的影響。
Based on the above description, it can be seen that because there is no particular limitation on how to manufacture the structure as shown in Figure 3D, as long as the
上述所舉實施例,僅用為方便說明本發明並非加以限制,在不離本發明精神範疇,熟悉此一行業技藝人士依本發明申請專利範圍及發明說明所作之各種簡易變形與修飾,均仍應含括於以下申請專利範圍中。 The above-mentioned embodiments are only used to facilitate the description of the present invention and are not intended to limit them. Without departing from the spirit of the present invention, those skilled in the industry who are familiar with the scope of the invention’s patent application and the description of the invention should make various simple modifications and modifications according to the scope of the patent application and the description of the invention. Included in the scope of the following patent applications.
7:導電層 7: Conductive layer
7a:線路部 7a: Line Department
7b:餘料部 7b: Remaining material department
8:第一膠膜層 8: The first film layer
9:第二膠膜層 9: The second film layer
9a:第一接合區 9a: The first junction zone
9b:第二接合區 9b: The second junction zone
P3:第三加工件 P3: The third machining part
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TW201031302A (en) * | 2009-02-04 | 2010-08-16 | Unimicron Technology Corp | Fabrication method of circuit board |
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TW201904850A (en) * | 2017-06-05 | 2019-02-01 | 日商富士商工機械有限公司 | Film bonding device |
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TW201031302A (en) * | 2009-02-04 | 2010-08-16 | Unimicron Technology Corp | Fabrication method of circuit board |
CN101808477A (en) * | 2009-02-17 | 2010-08-18 | 欣兴电子股份有限公司 | Method for manufacturing circuit board |
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