TWI722724B - Power module - Google Patents

Abstract

The invention discloses a power module, which includes a power component, a connection board and a package. The power component includes a thermally conductive substrate and a plurality of insulated gate bipolar transistor elements. The plurality of insulated gate bipolar transistor elements are disposed on the plurality of first electrical connection portions of the thermally conductive substrate, and the plurality of second electrical connection portions of the thermally conductive substrate are disposed around the plurality of first electrical connection portions. The connection board has a through hole, a plurality of third electrical connection portions and a plurality of fourth electrical connection portions are formed on both sides of the connection board, respectively, and the plurality of third electrical connection portions and the plurality of fourth electrical connection portions are connected to each other. The connection board is fixed on one side of the thermally conductive substrate, the plurality of insulated gate bipolar transistor elements are exposed in the the through hole, and the side walls forming the through hole and the thermally conductive substrate form a packaging groove together. The package is filled in the package groove to seal the plurality of insulated gate bipolar transistor elements.

Description

Power module

The invention relates to a power module, in particular to a power module that can be fixed on a circuit board by a surface soldering technique.

The existing common power module uses a plastic fixing frame to fix multiple pins. In the manufacturing process of this type of power module, a high-precision instrument must be used to fix the pins in each needle groove of the plastic fixing frame. If the power module uses more pins, the more difficult it is to insert the pins into the needle grooves of the plastic fixing frame, and the cost of manufacturing the plastic fixing frame also increases. For this reason, how to reduce the manufacturing cost of power modules has become one of the important issues for related manufacturers of power modules.

The invention discloses a power module, which is mainly used to improve the problem of high manufacturing cost of the existing power module with a plastic fixing frame.

One embodiment of the present invention discloses a power module, which includes: a power component, a connecting board body, and a package body. The power component includes a thermally conductive substrate and a plurality of insulated gate bipolar transistor elements. The two sides of the heat-conducting substrate are respectively defined as a heat-conducting surface and a mounting surface. The mounting surface has a device mounting area and a connecting area. The connecting area is arranged around the device mounting area. The device mounting area is formed with a plurality of first electrical connection parts, which are connected The zone is formed with a plurality of second electrical connections. A plurality of insulated gate bipolar transistor elements are fixedly arranged on the plurality of first electrical connection parts. The connecting plate body has a through hole which penetrates the connecting plate body. The two sides of the connecting plate body are respectively defined as an inner connecting surface and an exposed surface. The connecting plate body is formed with a plurality of third electrical connection parts on the inner connecting surface. A third electrical connection portion is used to connect to a plurality of second electrical connection portions; a plurality of fourth electrical connection portions are formed on the exposed surface of the connecting plate body, and the multiple fourth electrical connection portions are corresponding to a plurality of third electrical connections The connecting plate body is fixedly arranged on the mounting surface of the heat-conducting substrate, a plurality of insulated gate bipolar transistor elements are exposed in the through hole, and the sidewall of the through hole and the heat-conducting substrate jointly form an encapsulation groove. The package body is filled in the package groove for sealing a plurality of insulated gate bipolar transistor components.

In summary, the power module of the present invention, through the design of the connecting plate, can replace the plastic fixing frame used in the existing power module, so that the overall cost of the power module can be greatly reduced.

In order to further understand the features and technical content of the present invention, please refer to the following detailed descriptions and drawings about the present invention, but these descriptions and drawings are only used to illustrate the present invention, and do not make any claims about the protection scope of the present invention. limit.

In the following description, if it is pointed out, please refer to the specific drawing or as shown in the specific drawing, it is only used to emphasize in the subsequent description, and most of the related content appears in the specific drawing, but not It is restricted that only specific drawings can be referenced in this subsequent description.

Please refer to FIGS. 1 to 5 together. FIG. 1 is a schematic diagram of the power module of the present invention, FIG. 2 is a schematic diagram of the power module of the present invention without a package body, and FIG. 3 is a schematic diagram of the power module of the present invention. A top (upper) partial exploded schematic view, FIG. 4 is a partial exploded schematic view of a bottom (bottom) view of the power module of the present invention, and FIG. 5 is a partial cross-sectional schematic view of the power module of the present invention.

As shown in FIGS. 1 to 3, the power module 100 of the present invention includes: a power component 1, a connecting board body 20 and a package body 30. The power component 1 includes: a thermally conductive substrate 10 and a plurality of insulated gate bipolar transistor elements 11. The two side surfaces of the thermally conductive substrate 10 are respectively defined as a mounting surface 10A and a thermally conductive surface 10B (refer to FIG. 4). The mounting surface 10A has a device mounting area A and a connecting area B. The connecting area B surrounds the device mounting area A, and the connecting area B is similar to a mouth shape. In practical applications, the device mounting area A is correspondingly located at the center of the mounting surface 10A, and the connecting area B is correspondingly located adjacent to the periphery of the thermally conductive substrate 10.

As shown in FIG. 3, the thermally conductive substrate 10 is formed with a plurality of first electrical connection portions 12 in the device mounting area A, the thermally conductive substrate 10 is formed with a plurality of second electrical connection portions 13 in the connection area B, and a plurality of second electrical connection portions are formed. 13 is arranged adjacent to the periphery of the thermally conductive substrate 10. Each first electrical connection portion 12 and each second electrical connection portion 13 are metal connection pads. Regarding the number of the first electrical connection portions 12 and the second electrical connection portions 13 and their positions on the mounting surface 10A, they can be changed according to actual requirements, and are not limited to those shown in the figure. Regarding the size ratio of the device mounting area A and the connecting area B, it can also be changed according to requirements, and the figure shown in the figure is only one of the exemplary aspects.

As shown in FIG. 5, in practical applications, the thermally conductive substrate 10 may include: a high thermal conductivity substrate structure 101, an insulating layer 102 and a circuit layer 103. The insulating layer 102 is formed on one side of the high thermal conductivity substrate structure 101, and the circuit layer 103 is formed on the side of the insulating layer 102 opposite to the high thermal conductivity substrate structure 101. That is, the insulating layer 102 is located between the high thermal conductivity substrate structure 101 and the circuit. Between layers 103. The high thermal conductivity substrate structure 101 is a copper plate or an aluminum plate, and one side surface 1011 of the high thermal conductivity substrate structure 101 may be exposed in a large area.

In practical applications, the highly thermally conductive substrate structure 101 exposed on one side of the thermally conductive substrate 10 is used to connect to a related heat dissipation structure (for example, heat dissipation fins), and the high thermal conductivity substrate structure 101 and its connection The heat dissipation structure can be used to assist the heat energy generated during the operation of the power module 100 to be discharged. Regarding the material, size, appearance, etc. of the high thermal conductivity substrate structure 101, it can be changed according to requirements, and is not limited to what is shown in the figure.

The insulating layer 102 is used to isolate the circuit layer 103 and the high thermal conductivity substrate structure 101. The circuit layer 103 is opposite to the side surface of the insulating layer 102, and is formed with a plurality of the first electrical connection portions 12 and a plurality of the second electrical connection portions 13, and the circuit layer 103 also includes a plurality of circuit structures 1031 (refer to FIG. 3) The circuit structure 1031 is used to electrically connect at least a part of the first electrical connection portion 12 and at least a portion of the second electrical connection portion 13. Regarding the specific circuit form of the circuit layer 103, it can be designed according to requirements, which is not limited here. The above description of the structure of the thermally conductive substrate 10 is only one of the exemplary aspects of the thermally conductive substrate 10 in practical applications. In specific applications, the structure of the thermally conductive substrate 10 is not limited to the above description.

As shown in FIGS. 1 to 3, a plurality of insulated gate bipolar transistors (IGBT) 11 are respectively fixedly disposed on the plurality of first electrical connection parts 12. In practical applications, the plurality of insulated gate bipolar transistor elements 11 may be fixedly disposed on the plurality of first electrical connection parts 12 by using Surface Mount Technology (SMT), but it is not limited to this.

As shown in FIGS. 2 and 3, the connecting plate body 20 has a through hole 201, and the through hole 201 penetrates the connecting plate body 20. The two wide side surfaces of the connecting plate body 20 are respectively defined as an inner connecting surface 202 and an exposed surface 203. As shown in FIG. 4, the connecting plate body 20 is formed with a plurality of third electrical connection portions 21 on the inner connection surface 202, and the plurality of third electrical connection portions 21 are used to connect with the plurality of second electrical connections as shown in FIG. The parts 13 are connected to each other. The connecting plate body 20 is formed with a plurality of fourth electrical connection portions 22 on the exposed surface 203, and the plurality of fourth electrical connection portions 22 are correspondingly electrically connected with the plurality of third electrical connection portions 21, that is, a plurality of third electrical connections The part 21 and the plurality of fourth electrical connection parts 22 are respectively formed on both sides of the connecting plate body 20 so as to be opposite to each other.

Specifically, the connecting board body 20 may be, for example, various types of double-sided printed circuit boards. For example, the connecting board body 20 may be an FR4 circuit board, but not limited to this, and the through holes 201 may be milled grooves. Knife or laser cutting, etc., are formed directly on the printed circuit board. The formation of the plurality of third electrical connection portions 21 and the plurality of fourth electrical connection portions 22 can be made by the relevant manufacturing process of a printed circuit board, and the third electrical connection portion 21 can be embedded in the connection board body 20 The related conductive structure in the electrical connection is electrically connected to the fourth electrical connection portion 22 located on the other side of the connection plate body 20. In special applications, the connecting plate body 20 can also be composed of various insulating plate bodies (for example, injection-molded plastic plates) embedded with a plurality of conductive structures, and the two ends of the plurality of conductive structures are correspondingly formed as the first The third electrical connection portion 21 and the fourth electrical connection portion 22.

As shown in FIGS. 1 to 3, the connecting plate body 20 is fixedly arranged on the mounting surface 10A of the thermally conductive substrate 10, and the plurality of insulated gate bipolar transistor elements 11 arranged in the device mounting area A are correspondingly exposed in the through holes 201, The through hole 201 and the thermally conductive substrate 10 respectively form a packaging groove SP. The package body 30 is fixedly formed in the package groove SP, and the package body 30 is used to seal a plurality of insulated gate bipolar transistor elements 11 to prevent the insulated gate bipolar transistor elements 11 from external contamination, moisture, stress, etc. influences.

As shown in Figures 2, 3, and 4, in practical applications, the plurality of third electrical connection portions 21 connecting the board body 20 may be fixedly arranged on the plurality of third electrical connections 21 using surface mount technology (SMT). The second electrical connection part 13 is not limited to this. When the connecting plate body 20 is disposed on the side of the thermally conductive substrate 10 where the plurality of second electrical connection portions 13 are formed, the plurality of fourth electrical connection portions 22 are correspondingly located above the plurality of third electrical connection portions 21. In particular, since the connecting plate body 20 can be fixedly arranged on one side of the thermally conductive substrate 10 by using surface mount welding technology, in the actual production process, related automation equipment can be directly used to complete the connecting plate body 20. The fixing with the thermally conductive substrate 10 can greatly improve the manufacturing efficiency of the power module 100.

In practical applications, the multiple first electrical connection portions 12 and the multiple second electrical connection portions 13 may be connected to each other through the circuit structure 1031 of the thermally conductive substrate 10; and when the multiple third electrical connection portions of the board body 20 are connected When 21 is connected to the plurality of second electrical connection portions 13 through conductive colloid (such as silver glue), the plurality of second electrical connection portions 13 will correspondingly be in electrical communication with the plurality of fourth electrical connection portions 22; that is, The plurality of fourth electrical connection portions 22 can be connected to the plurality of first electrical connection portions 12 through the plurality of third electrical connection portions 21, the conductive glue, and the plurality of second electrical connection portions 13, and related users can The plurality of fourth electrical connection portions 22 are used to electrically communicate with the plurality of insulated gate bipolar transistor elements 11 provided on the thermally conductive substrate 10.

As shown in Figures 1 and 2, when the connecting board 20 is fixedly arranged on one side of the thermally conductive substrate 10, relevant personnel or mechanical equipment can fill the packaging groove SP with packaging glue through the design of the through hole 201 , The packaging glue will be able to correctly cover the multiple insulated gate bipolar transistor elements 11, so that the insulated gate bipolar transistor element 11 is isolated from the external environment; when the relevant personnel or mechanical equipment fills the packaging groove with the packaging glue After the SP is completed, it is possible to use related curing equipment (for example, cooling and curing, etc.) to cure the packaging glue into the packaging body 30.

It is worth mentioning that, as shown in FIGS. 1, 2 and 5, in practical applications, the thickness of the connecting plate body 20 may be greater than the height of each insulated gate bipolar transistor element 11 relative to the heat conducting substrate 10. When the connecting board body 20 is fixedly arranged on one side of the thermally conductive substrate 10, each insulated gate bipolar transistor element 11 does not protrude from the exposed surface 203 of the connecting board body 20, whereby the packaging glue is filled in the packaging groove SP At this time, the packaging glue will cover the multiple insulated gate bipolar transistor elements 11, so as to ensure that the cured packaging glue can isolate the insulated gate bipolar transistor elements 11 from the outside.

As shown in FIG. 5, in practical applications, the package body 30 can be made opposite to a surface 301 of the thermally conductive substrate 10 and roughly flush with the exposed surface 203 of the connecting plate body 20, or it can be made to The surface 301 is recessed in the direction of the heat conducting substrate 10. In this way, the relevant user of the power module 100 can use Surface Mount Technology (SMT) to fix the plurality of fourth electrical connections 22 on the circuit board designated by the user. In particular, since the relevant users of the power module 100 can use surface mount soldering technology to fix the power module 100 on the circuit board designated by the user, it can be directly installed in the actual production process. The related automation equipment is used to complete the fixing of the power module 100 and the related circuit board, so that the manufacturing efficiency of related products can be greatly improved.

In summary, the overall structure of the power module of the present invention is simple, and the manufacturing cost is relatively cheap, and it can be quickly and mass-produced using production equipment such as Surface Mount Technology (SMT).

The above descriptions are only the preferred and feasible embodiments of the present invention, which do not limit the scope of the present invention. Therefore, all equivalent technical changes made by using the description and drawings of the present invention are included in the protection scope of the present invention. .

100: Power module 1: Power components 10: Thermally conductive substrate 10A: Mounting surface 10B: heat conduction surface 101: High thermal conductivity substrate structure 1011: side 102: Insulation layer 103: Line layer 1031: Line structure 11: Insulated gate bipolar transistor element 12: The first electrical connection part 13: The second electrical connection part 20: Connect the board 201: Through hole 202: Internal connection surface 203: Exposed 21: The third electrical connection part 22: Fourth electrical connection part 30: Package body 301: Surface A: Device installation area B: Connection area SP: package slot

Fig. 1 is a schematic diagram of the power module of the present invention.

FIG. 2 is a schematic diagram of the power module of the present invention without a package body.

Fig. 3 is a partial exploded schematic diagram of the power module of the present invention.

FIG. 4 is a partial exploded schematic diagram of the power module of the present invention from another perspective.

FIG. 5 is a schematic partial cross-sectional view of the power module of the present invention.

10: Thermally conductive substrate

10A: Mounting surface

1031: Line structure

11: Insulated gate bipolar transistor element

12: The first electrical connection part

13: The second electrical connection part

20: Connect the board

201: Through hole

203: Exposed

22: Fourth electrical connection part

A: Device installation area

B: Connection area

Claims (8)

A power module, which includes: A power component, which includes: A heat-conducting substrate. Two side surfaces are respectively defined as a heat-conducting surface and a mounting surface. The mounting surface has a device mounting area and a connecting area. The connecting area is arranged around the device mounting area, and the device mounting area is formed with A plurality of first electrical connection portions, and a plurality of second electrical connection portions are formed in the connection area; and A plurality of insulated gate bipolar transistor elements, which are fixedly arranged on the plurality of first electrical connection parts; A connecting plate body has a through hole, the through hole penetrates the connecting plate body, two sides of the connecting plate body are respectively defined as an inner connecting surface and an exposed surface, the inner connecting surface is formed with a plurality of first Three electrical connection portions, a plurality of the third electrical connection portions are used to connect to a plurality of the second electrical connection portions; the exposed surface is formed with a plurality of fourth electrical connection portions, and a plurality of the fourth electrical connection portions The connecting portion is in electrical communication with a plurality of the third electrical connecting portions; the connecting plate body is fixedly arranged on the mounting surface of the thermally conductive substrate, and a plurality of the insulated gate bipolar transistor elements are exposed from the Through holes, and the sidewalls forming the through holes and the thermally conductive substrate together form an encapsulation groove; and A package body is filled in the package groove for sealing a plurality of the insulated gate bipolar transistor elements. The power module according to claim 1, wherein the thermally conductive substrate includes: a high thermal conductivity substrate structure, an insulating layer, and a circuit layer, and the insulating layer is disposed on the high thermal conductivity substrate structure and the Between the circuit layers, a plurality of the first electrical connection portions and a plurality of the second electrical connection portions are formed on the circuit layer. The power module according to claim 2, wherein the high thermal conductivity substrate structure is a copper plate or an aluminum plate. The power module according to claim 1, wherein the connection board body is a double-sided printed circuit board, and a plurality of the third electrical connection portions and a plurality of the fourth electrical connection portions are respectively formed on the connection Both sides of the board. The power module according to claim 1, wherein the thickness of the connecting plate body is greater than the height of any one of the insulated gate bipolar transistor elements relative to the heat conductive substrate, and the package body covers a plurality of The insulated gate bipolar transistor component, and the package body does not protrude from the exposed surface of the connecting board body. The power module according to claim 1, wherein a plurality of the insulated gate bipolar transistor elements are fixedly arranged on the corresponding plurality of first electrical connection parts by using a surface mount welding technology. The power module according to claim 1, wherein a plurality of the third electrical connection parts are fixedly arranged on the corresponding plurality of the second electrical connection parts by using surface mount welding technology. The power module according to claim 1, wherein a plurality of the second electrical connection portions are arranged adjacent to the periphery of the thermally conductive substrate.

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