TWI722479B - Pixel circuit and pixel driving method - Google Patents
Pixel circuit and pixel driving method Download PDFInfo
- Publication number
- TWI722479B TWI722479B TW108123859A TW108123859A TWI722479B TW I722479 B TWI722479 B TW I722479B TW 108123859 A TW108123859 A TW 108123859A TW 108123859 A TW108123859 A TW 108123859A TW I722479 B TWI722479 B TW I722479B
- Authority
- TW
- Taiwan
- Prior art keywords
- transistor
- node
- response
- voltage
- potential
- Prior art date
Links
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Abstract
Description
本揭示內容是關於一種畫素電路與畫素驅動方法,且特別是關於一種響應於時間控制訊號的畫素電路。 The present disclosure relates to a pixel circuit and a pixel driving method, and more particularly to a pixel circuit that responds to a time control signal.
畫素電路用於驅動並顯示不同的畫面結果。由於電路面積的大小將影響產品的製程,且市面普遍畫素電路低頻時的亮度較暗,造成使用者體驗降低。 The pixel circuit is used to drive and display different picture results. Since the size of the circuit area will affect the manufacturing process of the product, and the brightness of the pixel circuit in the market is generally dark at low frequencies, the user experience is reduced.
為了解決上述問題,本案的一態樣係於提供一種畫素電路,其包含驅動電路、資料寫入電路以及調變電路。驅動電路響應於第一節點的電位導通,以輸出驅動電流來驅動發光元件。資料寫入電路響應於閘極訊號導通以儲存資料電壓。調變電路響應於時間控制訊號的電位變化輸出資料電壓至第二節點,並根據第二節點的電位調整第一節點的電位至第一電壓以導通驅動電路。 In order to solve the above-mentioned problems, one aspect of the present application is to provide a pixel circuit including a driving circuit, a data writing circuit, and a modulation circuit. The driving circuit responds to the conduction of the potential of the first node to output a driving current to drive the light emitting element. The data writing circuit is turned on in response to the gate signal to store the data voltage. The modulation circuit outputs a data voltage to the second node in response to a change in the potential of the time control signal, and adjusts the potential of the first node to the first voltage according to the potential of the second node to turn on the driving circuit.
本案的一態樣係於提供一種畫素驅動方法,其包含下列操作:響應於第一節點的電位導通驅動電路,以輸 出驅動電流來驅動發光元件;藉由資料寫入電路響應於閘極訊號導通以儲存資料電壓;以及藉由調變電路響應於時間控制訊號的電位變化輸出資料電壓至第二節點,並根據第二節點的電位調整第一節點的電位至第一電壓,以控制驅動電路輸出驅動電流。 One aspect of this case is to provide a pixel driving method, which includes the following operations: turning on the driving circuit in response to the potential of the first node to output Drive current to drive the light-emitting element; store the data voltage by the data writing circuit in response to the turn-on of the gate signal; and output the data voltage to the second node by the modulation circuit in response to the potential change of the time control signal, and according to The potential of the second node adjusts the potential of the first node to the first voltage to control the driving circuit to output a driving current.
綜上所述,本案實施例所提供的畫素電路與畫素驅動方法可使用少量的訊號線與元件,以減少電路的分佈面積,適用於小螢幕的電子裝置,且於低頻時可提升畫素電路的亮度。 In summary, the pixel circuit and pixel driving method provided by the embodiments of the present application can use a small number of signal lines and components to reduce the distribution area of the circuit, which is suitable for electronic devices with small screens, and can improve the picture at low frequencies. The brightness of the element circuit.
100‧‧‧畫素電路 100‧‧‧Pixel circuit
110‧‧‧驅動電路 110‧‧‧Drive circuit
120‧‧‧資料寫入電路 120‧‧‧Data writing circuit
130‧‧‧調變電路 130‧‧‧Modulation circuit
140‧‧‧濾波電路 140‧‧‧Filter circuit
200‧‧‧工作波形 200‧‧‧Working waveform
T1、T2‧‧‧電晶體 T1, T2‧‧‧Transistor
T3、T4‧‧‧電晶體 T3, T4‧‧‧Transistor
T5、T6‧‧‧電晶體 T5, T6‧‧‧Transistor
T7‧‧‧電晶體 T7‧‧‧Transistor
C、CF‧‧‧電容 C、CF‧‧‧Capacitor
R1、R2‧‧‧電阻 R1, R2‧‧‧Resistor
D‧‧‧發光元件 D‧‧‧Light-emitting element
I‧‧‧驅動電流 I‧‧‧Drive current
AMP‧‧‧第一電壓 AMP‧‧‧First voltage
VDD‧‧‧第二電壓 VDD‧‧‧Second voltage
TC‧‧‧時間控制訊號 TC‧‧‧Time control signal
G[N]‧‧‧閘極訊號 G[N]‧‧‧Gate signal
Data[m]‧‧‧資料電壓 Data[m]‧‧‧Data voltage
VSS‧‧‧第三電壓 VSS‧‧‧Third voltage
N1‧‧‧第一節點 N1‧‧‧First node
N2‧‧‧第二節點 N2‧‧‧Second node
N3‧‧‧第三節點 N3‧‧‧The third node
V1‧‧‧第一預定位準 V1‧‧‧First pre-position
V2‧‧‧第二預定位準 V2‧‧‧Second pre-level
V3‧‧‧禁能位準 V3‧‧‧Prohibition level
V4‧‧‧致能位準 V4‧‧‧Enable level
RES‧‧‧重置期間 RES‧‧‧Reset period
DW‧‧‧資料寫入期間 DW‧‧‧Data writing period
TSET‧‧‧預備期間 TSET‧‧‧Preparation period
EM‧‧‧發光期間 EM‧‧‧Lighting period
Readout[m]‧‧‧讀取訊號 Readout[m]‧‧‧Read signal
Sense[N]‧‧‧感測訊號 Sense[N]‧‧‧sensing signal
本案之圖式說明如下:第1A圖為根據本案之一些實施例所繪示的一種畫素電路的示意圖;第1B圖為根據本案之一些實施例所繪示的第1A圖中畫素電路的波形之示意圖;第2圖為根據本案之一些實施例所繪示的畫素電路於重置期間的示意圖;第3圖為根據本案之一些實施例所繪示的畫素電路於資料寫入期間的操作示意圖;第4圖為根據本案之一些實施例所繪示的畫素電路於預備期間的操作示意圖;第5圖為根據本案之一些實施例所繪示的畫素電路於發光期間中驅動發光元件的操作示意圖; 第6圖為根據本案之一些實施例所繪示的畫素電路的示意圖;第7圖為根據本案之另一些實施例所繪示的畫素電路的示意圖;以及第8圖為根據本案之一些實施例所繪示的畫素驅動方法的流程圖。 The schematic description of the present case is as follows: Figure 1A is a schematic diagram of a pixel circuit drawn according to some embodiments of the present case; Figure 1B is a schematic diagram of a pixel circuit drawn according to some embodiments of the present case in Figure 1A A schematic diagram of the waveform; Figure 2 is a schematic diagram of the pixel circuit according to some embodiments of the present case during the reset period; Figure 3 is a schematic diagram of the pixel circuit according to some embodiments of the present case during the data writing period Figure 4 is a schematic diagram of the operation of the pixel circuit in the preparation period according to some embodiments of the present case; Figure 5 is a schematic diagram of the pixel circuit drawn in the light-emitting period according to some embodiments of the present case Schematic diagram of the operation of the light-emitting element; Fig. 6 is a schematic diagram of a pixel circuit according to some embodiments of the present case; Fig. 7 is a schematic diagram of a pixel circuit according to other embodiments of the present case; and Fig. 8 is a schematic diagram of some pixel circuits according to the present case The flowchart of the pixel driving method shown in the embodiment.
在本文中,使用第一、第二與第三等等之詞彙,是用於描述各種元件、組件、區域、層與/或區塊是可以被理解的。但是這些元件、組件、區域、層與/或區塊不應該被這些術語所限制。這些詞彙只限於用來辨別單一元件、組件、區域、層與/或區塊。因此,在下文中的一第一元件、組件、區域、層與/或區塊也可被稱為第二元件、組件、區域、層與/或區塊,而不脫離本案的本意。 In this article, the terms first, second, third, etc., are used to describe various elements, components, regions, layers, and/or blocks, and it is understandable. However, these elements, components, regions, layers and/or blocks should not be limited by these terms. These terms are only used to identify a single element, component, region, layer, and/or block. Therefore, in the following, a first element, component, region, layer and/or block may also be referred to as a second element, component, region, layer and/or block without departing from the original meaning of the present case.
於本文中,除非內文中對於冠詞有所特別限定,否則『一』與『該』可泛指單一個或多個。將進一步理解的是,本文中所使用之『包含』、『包括』、『具有』及相似詞彙,指明其所記載的特徵、區域、整數、步驟、操作、元件與/或組件,但不排除其所述或額外的其一個或多個其它特徵、區域、整數、步驟、操作、元件、組件,與/或其中之群組。 In this article, unless the article is specifically limited in the context, "一" and "the" can generally refer to one or more. It will be further understood that the terms "include", "include", "have" and similar words used in this article indicate the recorded features, regions, integers, steps, operations, elements and/or components, but do not exclude The described or additional one or more other features, regions, integers, steps, operations, elements, components, and/or groups thereof.
除非另有定義,本文所使用的所有詞彙(包括技術和科學術語)具有其通常的意涵,其意涵係能夠被熟悉 此領域者所理解。更進一步的說,上述之詞彙在普遍常用之字典中之定義,在本說明書的內容中應被解讀為與本案相關領域一致的意涵。除非有特別明確定義,這些詞彙將不被解釋為理想化的或過於正式的意涵。 Unless otherwise defined, all words used in this article (including technical and scientific terms) have their usual meanings, and their meanings can be familiar with People in this field understand. Furthermore, the definitions of the above-mentioned words in commonly used dictionaries should be interpreted as meaning consistent with the relevant fields in this case in the content of this specification. Unless specifically defined, these terms will not be interpreted as idealized or overly formal meanings.
本文使用的”約”、”近似”、或”實質上”包括所述值和在本領域普通技術人員確定的特定值的可接受的偏差範圍內的平均值,考慮到所討論的測量和與測量相關的誤差的特定數量(即,測量系統的限制)。例如,”約”可以表示在所述值的一個或多個標準偏差內,或±30%、±20%、±10%、±5%內。再者,本文使用的“約”、”近似”或“實質上”可依光學性質、蝕刻性質或其它性質,來選擇較可接受的偏差範圍或標準偏差,而可不用一個標準偏差適用全部性質。 As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within the acceptable deviation range of the specific value determined by a person of ordinary skill in the art, taking into account the measurement and the A certain amount of measurement-related error (ie, the limitation of the measurement system). For example, "about" can mean within one or more standard deviations of the stated value, or within ±30%, ±20%, ±10%, ±5%. Furthermore, the "about", "approximately" or "substantially" used herein can select a more acceptable deviation range or standard deviation based on optical properties, etching properties or other properties, and not one standard deviation can be used for all properties .
當一元件被稱為『連接』或『耦接』至另一元件時,它可以為直接連接或耦接至另一元件,又或是其中有一額外元件存在。相對的,當一元件被稱為『直接連接』或『直接耦接』至另一元件時,其中是沒有額外元件存在。 When an element is called "connected" or "coupled" to another element, it can be directly connected or coupled to another element, or an additional element may be present. In contrast, when an element is referred to as "directly connected" or "directly coupled" to another element, there is no additional element in it.
以下將以圖式揭露本案之複數個實施方式,為明確說明起見,許多實務上的細節將在以下敘述中一併說明。然而,應瞭解到,這些實務上的細節不應用以限制本案。也就是說,在本案部分實施方式中,這些實務上的細節是非必要的。此外,為簡化圖式起見,一些習知慣用的結構與元件在圖式中將以簡單示意的方式繪示之。 Several implementations of this case will be disclosed in the following diagrams. For the sake of clarity, many practical details will be described in the following description. However, it should be understood that these practical details should not be used to limit the case. In other words, in some implementations of this case, these practical details are unnecessary. In addition, in order to simplify the drawings, some conventionally used structures and elements will be shown in a simple schematic manner in the drawings.
參照第1A圖,第1A圖為根據本案之一些實施例所繪示的一種畫素電路100的示意圖。於一些實施例中,
畫素電路100可應用於顯示面板。
Referring to FIG. 1A, FIG. 1A is a schematic diagram of a
畫素電路100包含驅動電路110、資料寫入電路120以及調變電路130。驅動電路110用以響應於第一節點N1的電位導通,以輸出驅動電流I來驅動一發光元件D。資料寫入電路120用以響應於閘極訊號G[N]導通,以儲存資料電壓Data[m]。調變電路130用以響應於一時間控制訊號TC的電位變化輸出資料電壓Data[m]至第二節點N2,並根據第二節點N2的電位調整第一節點N1的電位至第一電壓AMP,以導通驅動電路110。
The
於一些實施例中,驅動電路110包含電晶體T1以及發光元件D。電晶體T1用以接收第二電壓VDD,並根據第一節點N1的電位導通,以產生驅動電流I。發光元件D耦接至電晶體T1,並根據驅動電流I發光。
In some embodiments, the driving
於一些實施例中,資料寫入電路120包含電容C以及電晶體T2。電容C的第一端用以接收第三電壓VSS,且電容C的第二端耦接至調變電路130。電晶體T2響應於閘極訊號G[N]導通,以傳輸資料電壓Data[m]至電容C的第二端以儲存資料電壓Data[m]至電容C。於一些實施例中,資料寫入電路120與調變電路130耦接至第三節點N3。
In some embodiments, the
於一些實施例中,調變電路130包含電晶體T3、電晶體T4、電晶體T5以及電晶體T6。電晶體T3耦接至第二節點N2與第三節點N3之間。電晶體T4耦接至第二節點N2與用以提供第二電壓VDD的一端點之間。電晶體T5耦接至第一節點N1,且電晶體T3、電晶體T4以及電晶體T5
皆根據時間控制訊號TC導通。電晶體T6耦接至第一節點N1與用以提供第一電壓AMP的一端點之間,並根據第二節點N2的電位導通以控制第一節點N1的電位。於一些實施例中,調變電路130耦接於第一節點N1與第三節點N3之間。於一些實施例中,電晶體T1、電晶體T2與電晶體T3可由P型電晶體實施,且電晶體T4、電晶體T5與電晶體T6可由N型電晶體實施。
In some embodiments, the
於一些實施例中,畫素電路100可由簡單結構(即六顆電晶體T1~T6與一顆電容C)來實施。如此一來,以畫素電路100所製成的顯示面板內的訊號線的用量與電路的面積得以降低,以適用於小螢幕電子裝置。
In some embodiments, the
於一些實施例中,畫素電路100更包含濾波電路140。濾波電路140包含電阻R1、電阻R2以及電容CF。電容CF耦接至電阻R1以及電阻R2之間。電阻R1的第一端用以接收第一電壓AMP,且電阻R1的第二端耦接至電晶體T6。電阻R2的第一端用以接收第二電壓VDD,且電阻R2的第二端耦接至電晶體T1與電晶體T4。於一些實施例中,畫素電路100可在不設置濾波電路140下直接接收第一電壓AMP與第二電壓VDD。為簡化說明,以下各個實施例(即第2~7圖)之操作將以直接接收第一電壓AMP與第二電壓VDD的例子進行說明。應當理解,以下各個實施例亦可搭配濾波電路140一起實施。
In some embodiments, the
在第1A圖中關於畫素電路100的相關電路設定方式用於示例,且本案並不以此為限。可執行與畫素電路
100的相同操作的相關電路設定方式皆為本案所涵蓋之範圍。
The related circuit setting method of the
參照第1B圖,第1B圖為根據本案之一些實施例所繪示的第1A圖中畫素電路100的波形200之示意圖。在一次操作過程中,波形200包含重置期間RES、資料寫入期間DW以及發光期間EM。於重置期間RES中,第二電壓VDD、第三電壓VSS以及閘極訊號G[N]具有一禁能位準V3,時間控制訊號TC具有一第一預定位準V1,並且無任何資料電壓Data[m]輸入至資料寫入電路120。於資料寫入期間DW中,第二電壓VDD與第三電壓VSS具有一禁能位準V3,時間控制訊號TC具有一第一預定位準V1,且資料電壓Data[m]藉由閘極訊號G[N]的控制,以輸入至寫入電路120。最後於發光期間EM中,第二電壓VDD具有一第一預定位準V1,第三電壓VSS與閘極訊號G[N]具有一禁能位準V3,時間控制訊號TC的電位從第一預定位準V1隨時間下降至第二預定位準V2,且資料電壓Data[m]根據具有一禁能位準V3的閘極訊號G[N]停止輸入至資料寫入電路120。關於上述各個期間之詳細操作將於後述段落一併參照後述第3圖至第5圖進行說明。
Referring to FIG. 1B, FIG. 1B is a schematic diagram of the
於一些實施例中,在資料寫入期間DW以及發光期間EM之間,波形200更包含預備期間TSET。於此預備期間TSET中,時間控制訊號TC的電位從第一預定位準V1隨時間逐漸下降至第二預定位準V2,以預備進入發光期間EM。
In some embodiments, between the data writing period DW and the light emitting period EM, the
於一些實施例中,第一預定位準V1大於第二預定位準V2,且第二預定位準V2大於禁能位準V3。於一些實施例中,第一預定位準V1可約為12伏特,第二預定位準V2可約為5伏特,禁能位準V3可約為0伏特,且本案並不以此些數值為限。於一些實施例中,第二電壓VDD的禁能位準V3、第三電壓VSS的禁能位準V3以及閘極訊號G[N]的禁能位準V3可完全不同,或部分相同,或三者皆相同。各種數值的第一預定位準V1、第二預定位準V2與/或禁能位準V3皆為本案所涵蓋的範圍。 In some embodiments, the first predetermined level V1 is greater than the second predetermined level V2, and the second predetermined level V2 is greater than the disable level V3. In some embodiments, the first predetermined level V1 may be approximately 12 volts, the second predetermined level V2 may be approximately 5 volts, and the disable level V3 may be approximately 0 volts, and this case does not take these values as limit. In some embodiments, the disable level V3 of the second voltage VDD, the disable level V3 of the third voltage VSS, and the disable level V3 of the gate signal G[N] may be completely different, or partially the same, or All three are the same. The various values of the first predetermined level V1, the second predetermined level V2, and/or the disable level V3 are all covered by this case.
參照第2圖,第2圖為根據本案之一些實施例所繪示的畫素電路100於重置期間RES的示意圖。
Referring to FIG. 2, FIG. 2 is a schematic diagram of the
於一些實施例中,電晶體T2根據閘極訊號G[N]關斷,且電晶體T3響應於具有第一預定位準V1的時間控制訊號TC關斷,以重置第二節點N2的電位。 In some embodiments, the transistor T2 is turned off according to the gate signal G[N], and the transistor T3 is turned off in response to the time control signal TC having the first predetermined level V1 to reset the potential of the second node N2 .
詳細而言,於重置期間RES中,電晶體T2根據閘極訊號G[N]關斷,故資料電壓Data[m]無法被傳輸至資料寫入電路120,以致電容C不儲存資料電壓Data[m]。電晶體T4根據具有第一預定位準V1的時間控制訊號TC與具有禁能位準V3的第二電壓VDD導通,以讓第二節點N2的電位調整至禁能位準V3。如此,電晶體T3再根據具有第一預定位準V1的時間控制訊號TC與第二節點N2上的電位(於此期間為禁能位準V3)關斷。電晶體T5響應於具有第一預定位準V1的時間控制訊號TC導通,以讓第一節點N1的電位調整至第一預定位準V1。而電晶體T6根據第二節點N2的電位與
第一節點N1的電位(於此期間為第一預定位準V1)關斷。最後,電晶體T1根據第一節點N1的電位與具有禁能位準V3的第二電壓VDD關斷,而不讓驅動電流I流過發光元件D。
In detail, during the reset period RES, the transistor T2 is turned off according to the gate signal G[N], so the data voltage Data[m] cannot be transmitted to the
參照第3圖,第3圖為根據本案之一些實施例所繪示的畫素電路100於資料寫入期間DW的操作示意圖。於資料寫入期間DW中,電晶體T2響應於閘極訊號G[N]導通,以讓資料電壓Data[m]傳遞至電容C並儲存於電容C中。
Referring to FIG. 3, FIG. 3 is a schematic diagram illustrating the operation of the
於一些實施例中,儲存於電容C的資料電壓Data[m]具有第二預定位準V2的電位。 In some embodiments, the data voltage Data[m] stored in the capacitor C has the potential of the second predetermined level V2.
於一些實施例中,電晶體T3耦接至電容C的第二端與第二節點N2之間,並用以響應於具有第一預定位準V1的時間控制訊號TC與第二節點N2的電位關斷。電晶體T4響應於具有第一預定位準V1的時間控制訊號TC導通,以傳輸具有禁能位準V3的第三電壓VDD至第二節點N2。電晶體T5響應於時間控制訊號TC持續導通,以傳輸具有第一預定位準V1的時間控制訊號TC至第一節點N1,以調整第一節點N1的電位至第一預定位準。如此,驅動電路110仍持續被關斷。電晶體T6響應於第二節點N2的電位與第一電壓AMP關斷。電晶體T1響應第一節點N1的電位(於此期間為第一預定位準V1)關斷,而不讓驅動電流I流過驅動電路110。
In some embodiments, the transistor T3 is coupled between the second end of the capacitor C and the second node N2, and is used to respond to the time control signal TC having the first predetermined level V1 and the potential of the second node N2 Off. The transistor T4 is turned on in response to the time control signal TC with the first predetermined level V1 to transmit the third voltage VDD with the disable level V3 to the second node N2. The transistor T5 is continuously turned on in response to the time control signal TC to transmit the time control signal TC with the first predetermined level V1 to the first node N1 to adjust the potential of the first node N1 to the first predetermined level. In this way, the driving
於一些實施例中,第一電壓AMP可約為3伏特,且本案並不以此數值為限。於一些實施例中,第一電壓AMP為關聯於三原色訊號的一直流電壓。於一些應用中,此直流電壓之設定可用於提高畫素電路100的畫面亮度調
整範圍。
In some embodiments, the first voltage AMP may be about 3 volts, and this case is not limited to this value. In some embodiments, the first voltage AMP is a DC voltage associated with the three primary color signals. In some applications, the setting of the DC voltage can be used to increase the brightness of the picture of the
參照第4圖,第4圖為根據本案之一些實施例所繪示的畫素電路100於預備期間TSET的操作示意圖。於預備期間TSET中,時間控制訊號TC將從第一預定位準V1開始下降。當時間控制訊號TC的電位還未降至第二預定位準V2時,畫素電路100的所有電晶體T1~T6將不會導通,如第4圖所示。
Referring to FIG. 4, FIG. 4 is a schematic diagram of the operation of the
於一些實施例中,第三電壓VDD切換至一致能位準V4,電晶體T4與電晶體T5響應於時間控制訊號TC的電位變化與具有致能位準V4的第三電壓VDD關斷。於一些實施例中,致能位準V4可約為10伏特,且本案並不以此數值為限。於一些實施例中,第一電壓AMP低於致能位準V4。 In some embodiments, the third voltage VDD is switched to the uniform energy level V4, and the transistor T4 and the transistor T5 are turned off in response to the potential change of the time control signal TC and the third voltage VDD with the enable level V4. In some embodiments, the enable level V4 may be about 10 volts, and the present case is not limited to this value. In some embodiments, the first voltage AMP is lower than the enable level V4.
參照第5圖,第5圖為根據本案之一些實施例所繪示的畫素電路100於發光期間EM中驅動發光元件D的操作示意圖。於發光期間EM中,當時間控制訊號TC從第一預定位準V1下降至第二預定位準V2時,將導通電晶體T3而使儲存於電容C的資料電壓Data[m]經由電晶體T3傳輸至第二節點N2,以提升第二節點N2的電位。當第二節點N2的電位上升至大於第一電壓AMP時,電晶體T6被導通,以傳輸第一電壓AMP至第一節點N1。如此,第一節點N1的電位被調整至第一電壓AMP。由於第一電壓AMP設定以低於致能位準V4。電晶體T1可根據第一節點N1的電位導通,以產生驅動電流I來驅動發光元件D。
Referring to FIG. 5, FIG. 5 is a schematic diagram illustrating the operation of the
於一些實施例中,時間控制訊號TC由第一預定
位準V1變化至第二預定位準V2,電晶體T3用以響應於時間控制訊號TC的電位變化導通以傳輸資料電壓Data[m]至第二節點N2,且電晶體T6根據第二節點N2的電位導通以傳輸第一電壓AMP至第一節點N1,以導通驅動電路110來驅動發光元件D。換言之,時間控制訊號TC的電位變化可用於控制發光元件D的發光期間。
In some embodiments, the time control signal TC is predetermined by the first
The level V1 changes to the second predetermined level V2, the transistor T3 is turned on in response to the change in the potential of the time control signal TC to transmit the data voltage Data[m] to the second node N2, and the transistor T6 is based on the second node N2 The potential of is turned on to transmit the first voltage AMP to the first node N1 to turn on the
於一些實施例中,藉由第一節點N1的電位可控制流過驅動電路110的驅動電流I,以決定畫素電路100的一畫面均勻度。
In some embodiments, the driving current I flowing through the driving
於一些實施例中,基於時間控制訊號TC的電位變化可控制驅動電流I的週期,以決定畫素電路100的一畫面灰階值。
In some embodiments, the period of the driving current I can be controlled based on the potential change of the time control signal TC to determine the grayscale value of a screen of the
於一些實施例中,畫素電路100於發光期間EM時,第二電壓VDD具有致能位準V4。此時,第一節點N1的電位等同於第一電壓AMP,以穩定電晶體T1導通。在電晶體T1穩定導通的情況下,能有效減少畫素電路100於低頻工作時的畫面閃爍情況。
In some embodiments, when the
於一些實施例中,當電容C內所儲存的資料電壓Data[m]釋放完畢,代表發光期間EM工作結束,此時畫素電路100將重新執行重置期間RES。
In some embodiments, when the data voltage Data[m] stored in the capacitor C is completely released, it represents the end of the EM operation during the light-emitting period. At this time, the
參照第6圖,第6圖為根據本案之一些實施例所繪示的畫素電路100的示意圖。於此例中,相較於前述的實施例,電晶體T4改為響應於一感測訊號Sense[N]與一讀取訊號Readout[m]導通,以傳輸資料電壓Data[m]至第二節
點N2。如此,於資料寫入期間DW,電晶體T2~電晶體T4的閾值電壓可進一步地被補償。
Referring to FIG. 6, FIG. 6 is a schematic diagram of the
參照第7圖,第7圖為根據本案之另一些實施例所繪示的畫素電路100的示意圖。相較於前述實施例,於此例中畫素電路100更包含電晶體T7。電晶體T7耦接於電晶體T1與發光元件D之間。為了補償電晶體T1的閾值電壓,在資料寫入期間DW,電晶體T7響應於感測訊號Sense[N]與讀取訊號Readout[m]導通,以將驅動電流I導向讀取訊號Readout[m]之端點。
Referring to FIG. 7, FIG. 7 is a schematic diagram of a
於一些實施例中,電晶體T1~電晶體T6可由薄膜電晶體(Thin-Film Transistor,TFT)中實施。在此實施例中。電晶體T1~電晶體T3以P型TFT作為例子說明,電晶體T4~電晶體T6以N型TFT作為例子說明,但本案並不此為限。 In some embodiments, the transistors T1 to T6 can be implemented in thin-film transistors (TFT). In this embodiment. Transistor T1~transistor T3 take P-type TFT as an example, and transistor T4~transistor T6 take N-type TFT as an example, but this case is not limited to this.
於一些實施例中,電晶體T4~電晶體T6中每一者可由氧化銦鎵鋅薄膜電晶體(Indium Gallium Zinc Oxide,IGZO)實施,且電晶體T1~電晶體T3中每一者可由低溫多晶矽電晶體(LTPS)實施。於一些實施例中,電晶體T4~電晶體T6中每一者可由低溫多晶矽電晶體(Low Temperature Poly-Silicon,LTPS)實施。 In some embodiments, each of transistor T4~transistor T6 can be implemented by Indium Gallium Zinc Oxide (IGZO), and each of transistor T1~transistor T3 can be implemented by low-temperature polysilicon Transistor (LTPS) implementation. In some embodiments, each of the transistors T4 to T6 may be implemented by a low temperature poly-silicon (LTPS).
於一些實施例中,電晶體T4~電晶體T6中每一者由氧化銦鎵鋅薄膜電晶體(IGZO)實施,以降低電晶體的漏電流來達到畫素電路100的最佳驅動效果。
In some embodiments, each of the transistors T4 to T6 is implemented by an indium gallium zinc oxide thin film transistor (IGZO) to reduce the leakage current of the transistor to achieve the best driving effect of the
依據不同應用,本案使用各種類型的電晶體實 作。當各個電晶體的控制端(例如是閘極)接收非導通的訊號(例如為低電壓VSL)時,控制端與第二端(例如是源極)的電壓差(gate-to-source voltages)低於電晶體的閾值電壓Vth,使得電晶體操作於截止(Cutoff)區或稱為次臨界(subthreshold)區。於此操作條件下,不同的輸入訊號大小將會影響電晶體的漏電流(或稱為次臨界電流(subthreshold leakage))。 According to different applications, various types of transistors are used in this case. Made. When the control terminal (for example, the gate) of each transistor receives a non-conducting signal (for example, a low voltage VSL), the voltage difference between the control terminal and the second terminal (for example, the source) (gate-to-source voltages) Below the threshold voltage Vth of the transistor, the transistor operates in the cutoff region or subthreshold region. Under this operating condition, different input signal sizes will affect the leakage current of the transistor (or called subthreshold leakage).
上述關於實施各電晶體數量的數值僅為示例,且本案並不以此些數值為限。 The foregoing numerical values regarding the number of implemented transistors are only examples, and this case is not limited to these numerical values.
參照第8圖,第8圖為根據本案之一些實施例所繪示的畫素驅動方法800的流程圖。
Referring to FIG. 8, FIG. 8 is a flowchart of a
於操作S810,響應於第一節點N1的電位導通驅動電路110,以輸出驅動電流I來驅動發光元件D。
In operation S810, the driving
於操作S820,資料寫入電路120響應於一閘極訊號G[N]導通以儲存資料電壓Data[m]。
In operation S820, the
於操作S830,調變電路130響應於時間控制訊號TC的電位變化輸出資料電壓Data[m]至第二節點N2,並根據第二節點N2的電位調整第一節點N1的電位至第一電壓AMP,以控制驅動電路110輸出驅動電流I。
In operation S830, the
上述操作S810至操作S830之說明可參照前述各圖式的實施例,故不重複贅述。上述畫素驅動方法800的多個操作僅為示例,並非限於上述示例的順序執行。在不違背本案各實施例的操作方式與範圍下,在畫素驅動方法800下的各種操作當可適當地增加、替換、省略或以不同順序執行。
The description of the above operations S810 to S830 can refer to the embodiments of the foregoing drawings, so the details will not be repeated. The multiple operations of the
綜上所述,本案實施例所提供的畫素電路100與畫素驅動方法800可使用少量的訊號線與元件,以減少電路的分佈面積,適用於小螢幕的電子裝置,且於低頻時可提升畫素電路的亮度。
In summary, the
雖然本案已以實施方式揭露如上,然其並非限定本案,任何熟習此技藝者,在不脫離本案之精神和範圍內,當可作各種之更動與潤飾,因此本案之保護範圍當視後附之申請專利範圍所界定者為準。 Although this case has been disclosed in the above implementation mode, it is not limited to this case. Anyone who is familiar with this technique can make various changes and modifications without departing from the spirit and scope of this case. Therefore, the scope of protection of this case should be attached hereafter. Those defined in the scope of the patent application shall prevail.
100‧‧‧畫素電路 100‧‧‧Pixel circuit
110‧‧‧驅動電路 110‧‧‧Drive circuit
120‧‧‧資料寫入電路 120‧‧‧Data writing circuit
130‧‧‧調變電路 130‧‧‧Modulation circuit
140‧‧‧濾波電路 140‧‧‧Filter circuit
T1、T2‧‧‧電晶體 T1, T2‧‧‧Transistor
T3、T4‧‧‧電晶體 T3, T4‧‧‧Transistor
T5、T6‧‧‧電晶體 T5, T6‧‧‧Transistor
C、CF‧‧‧電容 C、CF‧‧‧Capacitor
D‧‧‧發光元件 D‧‧‧Light-emitting element
I‧‧‧驅動電流 I‧‧‧Drive current
AMP‧‧‧第一電壓 AMP‧‧‧First voltage
VDD‧‧‧第二電壓 VDD‧‧‧Second voltage
TC‧‧‧時間控制訊號 TC‧‧‧Time control signal
G[N]‧‧‧閘極訊號 G[N]‧‧‧Gate signal
Data[m]‧‧‧資料電壓 Data[m]‧‧‧Data voltage
VSS‧‧‧第三電壓 VSS‧‧‧Third voltage
N1‧‧‧第一節點 N1‧‧‧First node
N2‧‧‧第二節點 N2‧‧‧Second node
N3‧‧‧第三節點 N3‧‧‧The third node
R1、R2‧‧‧電阻 R1, R2‧‧‧Resistor
Claims (20)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108123859A TWI722479B (en) | 2019-07-05 | 2019-07-05 | Pixel circuit and pixel driving method |
CN202010065808.3A CN111223435B (en) | 2019-07-05 | 2020-01-20 | Pixel circuit and pixel driving method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108123859A TWI722479B (en) | 2019-07-05 | 2019-07-05 | Pixel circuit and pixel driving method |
Publications (2)
Publication Number | Publication Date |
---|---|
TW202103138A TW202103138A (en) | 2021-01-16 |
TWI722479B true TWI722479B (en) | 2021-03-21 |
Family
ID=70810673
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW108123859A TWI722479B (en) | 2019-07-05 | 2019-07-05 | Pixel circuit and pixel driving method |
Country Status (2)
Country | Link |
---|---|
CN (1) | CN111223435B (en) |
TW (1) | TWI722479B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111883063B (en) * | 2020-07-17 | 2021-11-12 | 合肥维信诺科技有限公司 | Pixel circuit, display panel and display device |
CN116134506A (en) | 2021-07-30 | 2023-05-16 | 京东方科技集团股份有限公司 | Display panel and display device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201322223A (en) * | 2011-11-18 | 2013-06-01 | Au Optronics Corp | Pixel circuit and driving method thereof |
CN103971638A (en) * | 2014-05-04 | 2014-08-06 | 京东方科技集团股份有限公司 | Pixel drive circuit and method, array substrate and display device |
TW201539415A (en) * | 2014-04-09 | 2015-10-16 | Au Optronics Corp | Pixel driving circuit |
US20160005356A1 (en) * | 2013-11-04 | 2016-01-07 | Boe Technology Group Co., Ltd. | Oled Pixel Circuit, Driving Method of the Same, and Display Device |
CN106652907A (en) * | 2017-01-05 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, organic light-emitting display device and pixel compensation method |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106097964B (en) * | 2016-08-22 | 2018-09-18 | 京东方科技集团股份有限公司 | Pixel circuit, display panel, display equipment and driving method |
CN107591127B (en) * | 2017-10-13 | 2019-06-04 | 京东方科技集团股份有限公司 | Pixel circuit, array substrate, organic electroluminescent display panel and display device |
CN108389549B (en) * | 2018-01-30 | 2019-09-24 | 上海天马微电子有限公司 | Pixel circuit and driving method thereof, display panel and driving method thereof |
CN108538241A (en) * | 2018-06-29 | 2018-09-14 | 京东方科技集团股份有限公司 | Pixel circuit and its driving method, display device |
CN109920371B (en) * | 2019-04-26 | 2021-01-29 | 京东方科技集团股份有限公司 | Pixel circuit, driving method thereof and display device |
-
2019
- 2019-07-05 TW TW108123859A patent/TWI722479B/en active
-
2020
- 2020-01-20 CN CN202010065808.3A patent/CN111223435B/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201322223A (en) * | 2011-11-18 | 2013-06-01 | Au Optronics Corp | Pixel circuit and driving method thereof |
US20160005356A1 (en) * | 2013-11-04 | 2016-01-07 | Boe Technology Group Co., Ltd. | Oled Pixel Circuit, Driving Method of the Same, and Display Device |
TW201539415A (en) * | 2014-04-09 | 2015-10-16 | Au Optronics Corp | Pixel driving circuit |
CN103971638A (en) * | 2014-05-04 | 2014-08-06 | 京东方科技集团股份有限公司 | Pixel drive circuit and method, array substrate and display device |
CN106652907A (en) * | 2017-01-05 | 2017-05-10 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, organic light-emitting display device and pixel compensation method |
Also Published As
Publication number | Publication date |
---|---|
CN111223435B (en) | 2022-10-14 |
TW202103138A (en) | 2021-01-16 |
CN111223435A (en) | 2020-06-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108470539B (en) | Pixel circuit, driving method thereof, display panel and display device | |
US10319302B2 (en) | Pixel circuit, driving method thereof and display device | |
WO2018129932A1 (en) | Shift register unit circuit and drive method therefor, gate drive circuit, and display device | |
CN103927975B (en) | Pixel compensation circuit and method of organic light emitting display | |
TWI699742B (en) | Pixel circuit | |
WO2016074359A1 (en) | Pixel circuit, organic electroluminescence display panel, and display device and driving method therefor | |
TWI674566B (en) | Pixel circuit and high brightness display device | |
US9972245B2 (en) | Pixel circuit, driving method for the pixel circuit, display panel, and display device | |
WO2019024887A1 (en) | Pixel unit circuit, drive method, pixel circuit and display apparatus | |
CN103886838A (en) | Pixel compensation circuit, array substrate and display device | |
TWI685831B (en) | Pixel circuit and driving method thereof | |
TWI708233B (en) | Pixel circuit for low frame rate and display device having the same | |
CN108877668B (en) | Pixel circuit, driving method thereof and display panel | |
TWI697884B (en) | Pixel circuit | |
WO2020107830A1 (en) | Pixel circuit and display device | |
CN111063294B (en) | Pixel driving circuit and display panel | |
WO2023011333A1 (en) | Pixel driving circuit and driving method therefor, and display panel | |
TWI722479B (en) | Pixel circuit and pixel driving method | |
WO2023011327A1 (en) | Pixel driving circuit, driving method therefor, display substrate, and display device | |
TWI653616B (en) | Pixel circuit | |
TWI685832B (en) | Pixel driving circuit and the operating method thereof | |
CN106782331A (en) | A kind of image element circuit, its driving method, display panel and display device | |
TWI773498B (en) | Pixel circuit | |
WO2021128470A1 (en) | Pixel driving circuit, driving method therefor, and display panel | |
CN203733450U (en) | Pixel compensation circuit, array substrate and display device |