TWI719804B - 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 - Google Patents

光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 Download PDF

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TWI719804B
TWI719804B TW109101242A TW109101242A TWI719804B TW I719804 B TWI719804 B TW I719804B TW 109101242 A TW109101242 A TW 109101242A TW 109101242 A TW109101242 A TW 109101242A TW I719804 B TWI719804 B TW I719804B
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Taiwan
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pupil
measurement
metrology
landscape
metric
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TW109101242A
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Chinese (zh)
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TW202018836A (zh
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伊夫吉尼 古理維克
托爾 馬西安諾
艾度 亞當
托爾 亞茲
歐佛 薩哈蘭
巴瑞克 布蘭歐里茲
摩西 庫柏
洛伊 蘇里馬斯基
亞爾 飛勒
湯姆 里維安特
諾佳 夕拉
波瑞斯 伊佛瑞堤
納達夫 卡梅爾
里拉齊 沙屯
亞米爾 漢德曼
艾爾特沙豐 亞希渥
歐哈德 貝洽爾
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美商克萊譚克公司
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7003Alignment type or strategy, e.g. leveling, global alignment
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70625Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605Workpiece metrology
    • G03F7/70616Monitoring the printed patterns
    • G03F7/70633Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Of Optical Devices Or Fibers (AREA)
TW109101242A 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測 TWI719804B (zh)

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US201462083891P 2014-11-25 2014-11-25
US62/083,891 2014-11-25
US201562100384P 2015-01-06 2015-01-06
US62/100,384 2015-01-06

Publications (2)

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TW202018836A TW202018836A (zh) 2020-05-16
TWI719804B true TWI719804B (zh) 2021-02-21

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TW109101242A TWI719804B (zh) 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,計量學模組,目標設計檔案,景觀及目標的計量學量測
TW104139220A TWI711096B (zh) 2014-11-25 2015-11-25 光學計量學之方法,電腦程式產品,及計量學模組

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US (1) US10831108B2 (https=)
JP (3) JP6770958B2 (https=)
KR (1) KR102269514B1 (https=)
CN (2) CN112698551B (https=)
IL (1) IL251972B (https=)
SG (1) SG11201703585RA (https=)
TW (2) TWI719804B (https=)
WO (1) WO2016086056A1 (https=)

Families Citing this family (74)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3221897A1 (en) 2014-09-08 2017-09-27 The Research Foundation Of State University Of New York Metallic gratings and measurement methods thereof
IL290735B2 (en) 2014-11-26 2023-03-01 Asml Netherlands Bv Metrological method, computer product and system
TWI715582B (zh) 2015-05-19 2021-01-11 美商克萊譚克公司 用於疊對測量之形貌相位控制
US9995689B2 (en) * 2015-05-22 2018-06-12 Nanometrics Incorporated Optical metrology using differential fitting
NL2016937A (en) 2015-06-17 2016-12-22 Asml Netherlands Bv Recipe selection based on inter-recipe consistency
JP6789295B2 (ja) 2015-12-08 2020-11-25 ケーエルエー コーポレイション 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御
KR102477933B1 (ko) 2015-12-17 2022-12-15 에이에스엠엘 네델란즈 비.브이. 메트롤로지 장치의 조정 또는 측정 타겟의 특성에 기초한 측정
CN116936393B (zh) 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
WO2017146785A1 (en) 2016-02-25 2017-08-31 Kla-Tencor Corporation Analyzing root causes of process variation in scatterometry metrology
WO2017144270A1 (en) 2016-02-26 2017-08-31 Asml Netherlands B.V. Method of measuring a structure, inspection apparatus, lithographic system and device manufacturing method
CN111736436B (zh) 2016-04-22 2023-08-18 Asml荷兰有限公司 堆叠差异的确定和使用堆叠差异的校正
CN109154786B (zh) * 2016-05-17 2020-12-04 Asml荷兰有限公司 基于贯穿波长的相似性的度量强健性
CN113552779B (zh) 2016-07-15 2025-02-25 Asml荷兰有限公司 用于量测目标场的设计的方法和设备
US10578982B2 (en) 2016-08-17 2020-03-03 Asml Netherlands B.V. Substrate measurement recipe design of, or for, a target including a latent image
EP3299890A1 (en) * 2016-09-27 2018-03-28 ASML Netherlands B.V. Metrology recipe selection
KR102265164B1 (ko) * 2016-09-27 2021-06-15 에이에스엠엘 네델란즈 비.브이. 계측 레시피 선택
US10897566B2 (en) 2016-09-28 2021-01-19 Kla-Tencor Corporation Direct focusing with image binning in metrology tools
US10527952B2 (en) * 2016-10-25 2020-01-07 Kla-Tencor Corporation Fault discrimination and calibration of scatterometry overlay targets
CN110140087B (zh) * 2016-11-10 2021-08-13 Asml荷兰有限公司 使用叠层差异的设计和校正
JP6877541B2 (ja) * 2016-11-14 2021-05-26 ケーエルエー コーポレイション 一体型メトロロジツールを有する機能性が強化されたリソグラフィシステム
US10496781B2 (en) * 2016-12-19 2019-12-03 Kla Tencor Corporation Metrology recipe generation using predicted metrology images
US10824079B2 (en) * 2017-01-03 2020-11-03 Kla-Tencor Corporation Diffraction based overlay scatterometry
FR3062516B1 (fr) 2017-01-30 2019-04-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de mesure du desalignement entre une premiere et une seconde zones de gravure
KR102301556B1 (ko) * 2017-05-22 2021-09-13 케이엘에이 코포레이션 레시피 최적화 및 측정을 위한 구역 분석
NL2021024A (en) 2017-06-14 2018-12-19 Asml Netherlands Bv Lithographic Apparatus and Method
US11112369B2 (en) * 2017-06-19 2021-09-07 Kla-Tencor Corporation Hybrid overlay target design for imaging-based overlay and scatterometry-based overlay
WO2019010325A1 (en) * 2017-07-06 2019-01-10 Kla-Tencor Corporation ESTIMATION OF AMPLITUDE AND PHASE ASYMMETRY IN IMAGING TECHNOLOGY TO OBTAIN HIGH PRECISION IN RECOVERY METROLOGY
US10401738B2 (en) 2017-08-02 2019-09-03 Kla-Tencor Corporation Overlay metrology using multiple parameter configurations
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US10627720B2 (en) 2017-08-18 2020-04-21 Globalfoundries Inc. Overlay mark structures
US10699969B2 (en) 2017-08-30 2020-06-30 Kla-Tencor Corporation Quick adjustment of metrology measurement parameters according to process variation
KR102327116B1 (ko) * 2017-08-30 2021-11-16 케이엘에이 코포레이션 프로세스 변동에 따른 계측 측정 파라미터들의 신속한 조정
EP3462239A1 (en) * 2017-09-27 2019-04-03 ASML Netherlands B.V. Metrology in lithographic processes
KR102390687B1 (ko) 2017-09-11 2022-04-26 에이에스엠엘 네델란즈 비.브이. 리소그래피 프로세스들에서의 계측
US10565697B2 (en) * 2017-10-22 2020-02-18 Kla-Tencor Corporation Utilizing overlay misregistration error estimations in imaging overlay metrology
US11199506B2 (en) 2018-02-21 2021-12-14 Applied Materials Israel Ltd. Generating a training set usable for examination of a semiconductor specimen
IL277294B2 (en) * 2018-03-19 2024-05-01 Kla Corp Overlay measurement using multiple wavelengths
US12416580B2 (en) * 2018-05-07 2025-09-16 Unm Rainforest Innovations Method and system for in-line optical scatterometry
KR102586405B1 (ko) * 2018-06-14 2023-10-10 노바 엘티디. 반도체 제조용 측정 및 공정 제어
US10962951B2 (en) 2018-06-20 2021-03-30 Kla-Tencor Corporation Process and metrology control, process indicators and root cause analysis tools based on landscape information
NL2021852A (en) * 2018-08-01 2018-11-09 Asml Netherlands Bv Metrology apparatus and method for determining a characteristic of one or more structures on a substrate
US11410111B1 (en) * 2018-08-08 2022-08-09 Wells Fargo Bank, N.A. Generating predicted values based on data analysis using machine learning
US11118903B2 (en) * 2018-10-17 2021-09-14 Kla Corporation Efficient illumination shaping for scatterometry overlay
KR20210069104A (ko) 2018-11-07 2021-06-10 에이에스엠엘 네델란즈 비.브이. 공정에 대한 보정 결정
US11062928B2 (en) 2019-10-07 2021-07-13 Kla Corporation Process optimization using design of experiments and response surface models
US11119417B2 (en) * 2018-11-21 2021-09-14 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
WO2020106335A1 (en) 2018-11-21 2020-05-28 Kla-Tencor Corporation Single cell grey scatterometry overlay targets and their measurement using varying illumination parameter(s)
US11249400B2 (en) 2018-12-14 2022-02-15 Kla Corporation Per-site residuals analysis for accurate metrology measurements
US11333982B2 (en) * 2019-01-28 2022-05-17 Kla Corporation Scaling metric for quantifying metrology sensitivity to process variation
US10928739B2 (en) * 2019-02-22 2021-02-23 Kla-Tencor Corporation Method of measuring misregistration of semiconductor devices
US20220244649A1 (en) * 2019-07-04 2022-08-04 Asml Netherlands B.V. Sub-field control of a lithographic process and associated apparatus
CN114097066A (zh) * 2019-07-10 2022-02-25 科磊股份有限公司 数据驱动的错位参数配置与测量的系统及方法
US11360397B2 (en) * 2019-09-17 2022-06-14 Kla Corporation System and method for application of harmonic detectivity as a quality indicator for imaging-based overlay measurements
US12585201B2 (en) * 2019-10-14 2026-03-24 Asml Holding N.V. Metrology mark structure and method of determining metrology mark structure
WO2021087345A1 (en) 2019-11-01 2021-05-06 Unm Rainforest Innovations In-line angular optical multi-point scatterometry for nanomanufacturing systems
EP4049307A4 (en) * 2019-11-28 2023-12-27 KLA Corporation SYSTEMS AND METHODS FOR METROLOGY OPTIMIZATION BASED ON METROLOGY LANDSCAPES
WO2022008135A1 (en) * 2020-07-09 2022-01-13 Asml Netherlands B.V. Metrology method and apparatus and computer program
USD977504S1 (en) 2020-07-22 2023-02-07 Applied Materials, Inc. Portion of a display panel with a graphical user interface
US12283503B2 (en) 2020-07-22 2025-04-22 Applied Materials, Inc. Substrate measurement subsystem
US11688616B2 (en) 2020-07-22 2023-06-27 Applied Materials, Inc. Integrated substrate measurement system to improve manufacturing process performance
US11454894B2 (en) * 2020-09-14 2022-09-27 Kla Corporation Systems and methods for scatterometric single-wavelength measurement of misregistration and amelioration thereof
US20220357674A1 (en) * 2021-05-04 2022-11-10 Kla Corporation Oblique illumination for overlay metrology
US12406891B2 (en) 2021-09-30 2025-09-02 International Business Machines Corporation Characterization of asymmetric material deposition for metrology
WO2023096704A1 (en) * 2021-11-27 2023-06-01 Kla Corporation Improved targets for diffraction-based overlay error metrology
US12235624B2 (en) 2021-12-21 2025-02-25 Applied Materials, Inc. Methods and mechanisms for adjusting process chamber parameters during substrate manufacturing
US12216455B2 (en) 2022-01-25 2025-02-04 Applied Materials, Inc. Chamber component condition estimation using substrate measurements
US12148647B2 (en) 2022-01-25 2024-11-19 Applied Materials, Inc. Integrated substrate measurement system
US12339645B2 (en) 2022-01-25 2025-06-24 Applied Materials, Inc. Estimation of chamber component conditions using substrate measurements
CN115327857A (zh) * 2022-05-30 2022-11-11 上海华力集成电路制造有限公司 一种量测方法、激光套刻装置、计算机存储介质及模组
IL293633B2 (en) * 2022-06-06 2024-06-01 Nova Ltd A system and method for building a library and using it in measurements on designed buildings
US12092966B2 (en) * 2022-11-23 2024-09-17 Kla Corporation Device feature specific edge placement error (EPE)
US20240337952A1 (en) * 2023-04-04 2024-10-10 Kla Corporation System and method for determining overlay measurement of a scanning target
US12504697B2 (en) * 2023-06-02 2025-12-23 Kla Corporation Single grab pupil landscape via broadband illumination
EP4538794A1 (en) * 2023-10-13 2025-04-16 ASML Netherlands B.V. Metrology method and associated metrology device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120022836A1 (en) * 2010-07-22 2012-01-26 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
TW201314174A (zh) * 2011-06-20 2013-04-01 Tokyo Electron Ltd 利用光學臨界尺寸計量之結構分析用光學參數模型之最佳化方法
TW201329417A (zh) * 2011-10-31 2013-07-16 Tokyo Electron Ltd 用於計量之以流程變異為基礎的模型最佳化
TW201346214A (zh) * 2012-03-28 2013-11-16 Tokyo Electron Ltd 基於光譜靈敏度之模型優化方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7330279B2 (en) * 2002-07-25 2008-02-12 Timbre Technologies, Inc. Model and parameter selection for optical metrology
US7352453B2 (en) 2003-01-17 2008-04-01 Kla-Tencor Technologies Corporation Method for process optimization and control by comparison between 2 or more measured scatterometry signals
KR101565071B1 (ko) 2005-11-18 2015-11-03 케이엘에이-텐코 코포레이션 검사 데이터와 조합하여 설계 데이터를 활용하는 방법 및 시스템
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7573584B2 (en) 2006-09-25 2009-08-11 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7656518B2 (en) 2007-03-30 2010-02-02 Asml Netherlands B.V. Method of measuring asymmetry in a scatterometer, a method of measuring an overlay error in a substrate and a metrology apparatus
NL2006700A (en) * 2010-06-04 2011-12-06 Asml Netherlands Bv Method and apparatus for measuring a structure on a substrate, computer program products for implementing such methods & apparatus.
JP6008851B2 (ja) 2010-07-19 2016-10-19 エーエスエムエル ネザーランズ ビー.ブイ. オーバレイ誤差を決定する方法及び装置
KR101492205B1 (ko) 2010-11-12 2015-02-10 에이에스엠엘 네델란즈 비.브이. 메트롤로지 방법 및 장치, 리소그래피 시스템, 및 디바이스 제조 방법
WO2012138758A1 (en) 2011-04-06 2012-10-11 Kla-Tencor Corporation Method and system for providing a quality metric for improved process control
US8681413B2 (en) 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
NL2009294A (en) 2011-08-30 2013-03-04 Asml Netherlands Bv Method and apparatus for determining an overlay error.
US9329033B2 (en) * 2012-09-05 2016-05-03 Kla-Tencor Corporation Method for estimating and correcting misregistration target inaccuracy
WO2014068116A1 (en) * 2012-11-05 2014-05-08 Asml Netherlands B.V. Method and apparatus for measuring asymmetry of a microstructure, position measuring method, position measuring apparatus, lithographic apparatus and device manufacturing method
US10242290B2 (en) 2012-11-09 2019-03-26 Kla-Tencor Corporation Method, system, and user interface for metrology target characterization
NL2011816A (en) 2012-11-30 2014-06-04 Asml Netherlands Bv Method of determining dose and focus, inspection apparatus, patterning device, substrate and device manufacturing method.
US9341769B2 (en) 2012-12-17 2016-05-17 Kla-Tencor Corporation Spectral control system
US9512985B2 (en) 2013-02-22 2016-12-06 Kla-Tencor Corporation Systems for providing illumination in optical metrology
US9910953B2 (en) * 2013-03-04 2018-03-06 Kla-Tencor Corporation Metrology target identification, design and verification
US9909982B2 (en) * 2013-03-08 2018-03-06 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
WO2014138522A1 (en) * 2013-03-08 2014-09-12 Kla-Tencor Corporation Pupil plane calibration for scatterometry overlay measurement
CN108398856B (zh) * 2013-08-07 2020-10-16 Asml荷兰有限公司 量测方法和设备、光刻系统和器件制造方法
WO2015031337A1 (en) * 2013-08-27 2015-03-05 Kla-Tencor Corporation Removing process-variation-related inaccuracies from scatterometry measurements
US9518916B1 (en) * 2013-10-18 2016-12-13 Kla-Tencor Corporation Compressive sensing for metrology
JP6509225B2 (ja) * 2013-12-11 2019-05-08 ケーエルエー−テンカー コーポレイション 要件に対するターゲット及びプロセス感度の分析
US10365230B1 (en) * 2014-03-19 2019-07-30 Kla-Tencor Corporation Scatterometry overlay based on reflection peak locations
US9851300B1 (en) * 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
WO2016037003A1 (en) * 2014-09-03 2016-03-10 Kla-Tencor Corporation Optimizing the utilization of metrology tools
WO2016123552A1 (en) * 2015-01-30 2016-08-04 Kla-Tencor Corporation Device metrology targets and methods
US9903711B2 (en) * 2015-04-06 2018-02-27 KLA—Tencor Corporation Feed forward of metrology data in a metrology system
JP6789295B2 (ja) * 2015-12-08 2020-11-25 ケーエルエー コーポレイション 偏光ターゲットおよび偏光照明を用いた回折光の振幅および位相の制御

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120022836A1 (en) * 2010-07-22 2012-01-26 Tokyo Electron Limited Method for automated determination of an optimally parameterized scatterometry model
TW201314174A (zh) * 2011-06-20 2013-04-01 Tokyo Electron Ltd 利用光學臨界尺寸計量之結構分析用光學參數模型之最佳化方法
TW201329417A (zh) * 2011-10-31 2013-07-16 Tokyo Electron Ltd 用於計量之以流程變異為基礎的模型最佳化
TW201346214A (zh) * 2012-03-28 2013-11-16 Tokyo Electron Ltd 基於光譜靈敏度之模型優化方法
WO2014062972A1 (en) * 2012-10-18 2014-04-24 Kla-Tencor Corporation Symmetric target design in scatterometry overlay metrology

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