TWI716977B - Transfer stamp - Google Patents

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TWI716977B
TWI716977B TW108130107A TW108130107A TWI716977B TW I716977 B TWI716977 B TW I716977B TW 108130107 A TW108130107 A TW 108130107A TW 108130107 A TW108130107 A TW 108130107A TW I716977 B TWI716977 B TW I716977B
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area
grooves
substrate
transposed
transposition
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TW108130107A
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Chinese (zh)
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TW202109915A (en
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藍伊奮
莊惠揚
何金原
吳宗典
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友達光電股份有限公司
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Abstract

A transfer stamp includes a substrate and a plurality of posts. The substrate has a transfer area and a frame area surrounding the transfer area. The posts are disposed on the transfer area. The frame area includes a plurality of trenches. The substrate includes a top surface and a bottom surface opposite to the top surface. The trenches extend from the top surface into the substrate. The trenches surround the transfer area.

Description

轉置頭 Transposed head

本揭露是關於一種轉置頭。 This disclosure is about a transposed head.

微型發光二極體具有微小化,輕薄化,自發光、高亮度與高對比度等優點。微型發光二極體顯示器包括多個發光二極體及驅動電路基板。在微型發光二極體顯示器的製程中,先在生長基板上形成多個微型發光二極體,接著可採用巨量轉移技術將微型發光二極體從生長基板轉置到驅動電路基板,巨量轉移技術可透過彈性轉置頭拾取及放置微型發光二極體,然而。一般而言,彈性轉置頭的製作方法是將高分子材料倒入模具中,高分子材料固化後接著脫模(demolding),藉此得到彈性轉置頭。 Miniature light-emitting diodes have the advantages of miniaturization, lightness and thinness, self-luminescence, high brightness and high contrast. The micro light emitting diode display includes a plurality of light emitting diodes and a driving circuit substrate. In the manufacturing process of the micro light emitting diode display, a plurality of micro light emitting diodes are first formed on the growth substrate, and then the micro light emitting diode can be transferred from the growth substrate to the driving circuit substrate by the mass transfer technology. The transfer technology can pick up and place miniature light-emitting diodes through the flexible transposing head, however. Generally speaking, the manufacturing method of the elastic transposition head is to pour the polymer material into a mold, and the polymer material is cured and then demolded to obtain the elastic transposition head.

脫模時,彈性轉置頭可能會因高分子材料特性而導致無法避免之形變,傳統解決方法之一是墊高轉置頭接觸微型元件的轉置區域,墊高的方法例如以雙重塗佈法形成平台區域於其下方,然後以烘箱使其固化。然而,在固化的過程中空氣可能未完全排出而形成氣泡,導致成型後平台區域的內部或表面有細小的孔洞,影響轉置區對微型發光二極體的轉置良率。 During demolding, the elastic transposition head may be deformed unavoidably due to the properties of polymer materials. One of the traditional solutions is to raise the transposition head to contact the transposition area of the micro-components. The heightening method is for example double coating The method forms the platform area below it, and then cures it in an oven. However, during the curing process, air may not be completely exhausted to form bubbles, resulting in small holes in or on the surface of the platform area after molding, which affects the transposition yield of the micro light emitting diodes in the transposed area.

本揭露提供一種轉置頭,其可確保轉置區對微型發光二極體的轉置良率。 The present disclosure provides a transposing head, which can ensure the transposing yield of the micro light emitting diode by the transposing area.

本揭露的轉置頭包括基板及多個凸塊。基板定義有轉置區及環繞轉置區之框架區。凸塊設置於轉置區上。框架區包括多個溝槽。基板具有相對的頂面及底面,溝槽自頂面伸至基板中,且溝槽環繞轉置區。 The transposed head of the present disclosure includes a substrate and a plurality of bumps. The substrate defines a transposed area and a frame area surrounding the transposed area. The bump is arranged on the transposed area. The frame area includes a plurality of grooves. The substrate has opposite top and bottom surfaces, the groove extends from the top surface into the substrate, and the groove surrounds the transposed area.

基於上述,在本發明所提出的轉置頭中,透過具有多個溝槽的框架區,且溝槽環繞轉置區,在脫模時,可以增加框架區與模具之間的脫模點(peeling point),使得框架區與模具在脫膜時形成不連續之脫膜動線,抑制框架區的頂面發生翹曲而減少轉置區邊緣形變,進而確保轉置區對微型發光二極體的轉置良率。其中,此種轉置頭之應用不限於微型發光二極體的轉置,亦可用於其他半導體元件之轉置及應用上。 Based on the above, in the transposition head proposed in the present invention, through the frame area with multiple grooves, and the grooves surround the transposition area, during demolding, the demolding point between the frame area and the mold can be increased ( peeling point), which makes the frame area and the mold form a discontinuous stripping line during the stripping process, suppresses the warping of the top surface of the frame area and reduces the edge deformation of the transposed area, thereby ensuring that the transposed area is opposite to the micro light emitting diode The transposition yield rate. Among them, the application of this kind of transposed head is not limited to the transposition of miniature light-emitting diodes, and can also be used in transposition and applications of other semiconductor devices.

10、10a、10b、10c、10d‧‧‧轉置頭 10, 10a, 10b, 10c, 10d‧‧‧Transposed head

100‧‧‧基板 100‧‧‧Substrate

100A‧‧‧頂面 100A‧‧‧Top surface

100B‧‧‧底面 100B‧‧‧Bottom

102‧‧‧凸塊 102‧‧‧ bump

104‧‧‧溝槽 104‧‧‧Groove

104a‧‧‧溝槽 104a‧‧‧Groove

104b‧‧‧溝槽 104b‧‧‧Groove

104c‧‧‧溝槽 104c‧‧‧Groove

104d‧‧‧溝槽 104d‧‧‧Groove

A-A’‧‧‧剖線 Section A-A’‧‧‧

B-B’‧‧‧剖線 Section B-B’‧‧‧

D1‧‧‧方向 D1‧‧‧direction

D2‧‧‧方向 D2‧‧‧direction

D3‧‧‧方向 D3‧‧‧direction

E1‧‧‧第一端點 E1‧‧‧First endpoint

E2‧‧‧第二端點 E2‧‧‧second endpoint

FA‧‧‧框架區 FA‧‧‧Frame Area

H‧‧‧深度 H‧‧‧depth

L‧‧‧最大長度 L‧‧‧Maximum length

PA‧‧‧轉置區 PA‧‧‧Transpose area

S‧‧‧間距 S‧‧‧Pitch

T‧‧‧厚度 T‧‧‧Thickness

閱讀以下詳細敘述並搭配對應之圖式,可了解本揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 Read the following detailed description and match the corresponding drawings to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion.

第1A圖是依照本揭露一實施例的轉置頭的上視示意圖。 FIG. 1A is a schematic top view of a transposition head according to an embodiment of the disclosure.

第1B圖是第1A圖沿剖線A-A’的剖面示意圖。 Figure 1B is a schematic cross-sectional view of Figure 1A along the section line A-A'.

第1C圖是由轉置區的邊緣至框架區所測得的框架區頂面 翹曲的比較圖。 Figure 1C is the top surface of the frame area measured from the edge of the transposed area to the frame area Comparison chart of warpage.

第2A圖至第2C圖依照本揭露另一實施例的轉置頭的上視示意圖。 2A to 2C are schematic top views of a transposition head according to another embodiment of the disclosure.

第3A圖及第3B圖是依照本揭露另一實施例的轉置頭的上視示意圖。 3A and 3B are schematic top views of a transposition head according to another embodiment of the disclosure.

第4圖是依照本揭露另一實施例的轉置頭的上視示意圖。 FIG. 4 is a schematic top view of a transposition head according to another embodiment of the disclosure.

第5A圖是依照本揭露另一實施例的轉置頭的上視示意圖。 FIG. 5A is a schematic top view of a transposition head according to another embodiment of the disclosure.

第5B圖是第5A圖沿剖線B-B’的剖面示意圖。 Figure 5B is a schematic cross-sectional view of Figure 5A along the section line B-B'.

第6A圖至第6D圖是依照本揭露另一實施例的轉置頭的上視示意圖。 6A to 6D are schematic top views of a transposition head according to another embodiment of the disclosure.

第7A圖至第7F圖繪示第6A圖的轉置頭的溝槽的剖面示意圖。 7A to 7F show schematic cross-sectional views of the groove of the transposition head in FIG. 6A.

為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.

第1A圖是依照本揭露一實施例的轉置頭10(transfer stamp)的上視示意圖。第1B圖是第1A圖沿剖線A-A’的剖面示意圖。請同時參照第1A圖及第1B圖,本揭露實施例的轉置頭10包括基板100以及多個凸塊102。基板100具有相對的頂面100A及底面100B,其中基板100定義有轉置區(Post area)PA及框架區(Frame area)FA,框架區FA環繞轉置區PA,凸塊102設置於轉置區PA上,因此轉置區PA亦稱為凸 塊區。在本實施例中,轉置頭10用以轉置微型發光二極體以製造顯示裝置為例,在其他實施例中亦可用以轉置其他的半導體元件。於本實施例中,轉置頭10的材質例如是聚二甲基矽氧烷(poly dimethyl siloxane;PDMS),但本揭露不限於此,於其他實施例中,轉置頭10可採用具有低楊氏模數(Young’s modulus)的彈性體。凸塊102的材質例如是絕緣材料,例如包括無機材料、有機材料、上述之組合或其堆疊層。 FIG. 1A is a schematic top view of a transfer stamp 10 according to an embodiment of the disclosure. Figure 1B is a schematic cross-sectional view of Figure 1A along the section line A-A'. Referring to FIGS. 1A and 1B at the same time, the transposition head 10 of the embodiment of the disclosure includes a substrate 100 and a plurality of bumps 102. The substrate 100 has a top surface 100A and a bottom surface 100B opposed to each other. The substrate 100 defines a post area PA and a frame area FA. The frame area FA surrounds the transposed area PA, and the bumps 102 are disposed on the transposed area. Area PA, so the transposed area PA is also called convex Block area. In this embodiment, the transposing head 10 is used to transpose a miniature light emitting diode to manufacture a display device as an example. In other embodiments, it can also be used to transpose other semiconductor components. In this embodiment, the material of the transposition head 10 is, for example, polydimethylsiloxane (PDMS), but the disclosure is not limited to this. In other embodiments, the transposition head 10 can be Young's modulus (Young's modulus) elastomer. The material of the bump 102 is, for example, an insulating material, such as an inorganic material, an organic material, a combination of the foregoing, or a stacked layer thereof.

第1A圖中還繪示了凸塊102的放大示意圖,凸塊102用以與目標微型發光二極體接觸,進而提取想要的多個目標微型發光二極體。轉置頭10的製作方法例如是將高分子材料倒入模具中,高分子材料固化後接著脫模,藉此得到轉置頭10,其中基板100的頂面100A可視為是轉置頭10接觸模具的面。於本實施例中,框架區FA包括多個溝槽104,於此,溝槽104可作為脫模點。溝槽104自頂面100A延伸至基板100中,且溝槽104環繞轉置區PA。藉此框架區FA具有多個溝槽104,在脫模時,可以增加框架區FA與模具之間的界面脫模點,使得框架區FA與模具在脫膜時形成不連續之脫膜動線,抑制基板100位於框架區FA的頂面100A發生翹曲(warpage)而邊緣形變,進而確保轉置區PA的轉置良率。 FIG. 1A also shows an enlarged schematic diagram of the bump 102. The bump 102 is used to contact the target micro-light-emitting diode to extract multiple target micro-light-emitting diodes. The manufacturing method of the transposing head 10 is, for example, pouring the polymer material into a mold, and then demolding the polymer material after curing, thereby obtaining the transposing head 10, wherein the top surface 100A of the substrate 100 can be regarded as the contact of the transposing head 10 The face of the mold. In this embodiment, the frame area FA includes a plurality of grooves 104, where the grooves 104 can be used as demolding points. The trench 104 extends from the top surface 100A into the substrate 100, and the trench 104 surrounds the transposition area PA. As a result, the frame area FA has a plurality of grooves 104. During demolding, the release point of the interface between the frame area FA and the mold can be increased, so that the frame area FA and the mold form a discontinuous release line when the mold is released. Therefore, the top surface 100A of the substrate 100 in the frame area FA is prevented from warpage and edge deformation, thereby ensuring the transposition yield of the transposition area PA.

於本實施例中,溝槽104的俯視形狀為正方形。溝槽104的排列之輪廓形狀與轉置區PA的輪廓形狀實質上相同。溝槽104相對於轉置區PA呈點對稱。此種方案的對稱溝槽用於平衡脫膜時各個方向的脫膜應力,並增加基板100的頂面100A的面積利用率。亦即,可更有效地利用基板100位於框架 區FA的頂面100A來配置更多的溝槽104,從而可增加框架區FA與模具之間的界面脫模點,使得框架區FA與模具在脫膜時形成不連續之脫膜動線,抑制基板100位於框架區FA的頂面100A發生翹曲(warpage)而邊緣形變,進而確保轉置區PA的轉置良率。 In this embodiment, the top-view shape of the trench 104 is a square. The contour shape of the arrangement of the trenches 104 is substantially the same as the contour shape of the transposed area PA. The trench 104 is point-symmetric with respect to the transposed area PA. The symmetrical grooves of this solution are used to balance the release stress in various directions during the release, and increase the area utilization rate of the top surface 100A of the substrate 100. That is, the substrate 100 located in the frame can be more effectively used The top surface 100A of the area FA is equipped with more grooves 104, so as to increase the release point of the interface between the frame area FA and the mold, so that the frame area FA and the mold form a discontinuous release line when the mold is released. The top surface 100A of the substrate 100 located in the frame area FA is prevented from warpage and edge deformation, thereby ensuring the transposition yield of the transposition area PA.

藉由第1C圖來說明,框架區FA的溝槽104自頂面100A延伸至基板100中且溝槽104環繞轉置區PA可以抑制基板100位於框架區FA的頂面100A發生翹曲而變形。 As illustrated by FIG. 1C, the groove 104 of the frame area FA extends from the top surface 100A into the substrate 100 and the groove 104 surrounds the transposition area PA, which can prevent the substrate 100 from warping and deforming on the top surface 100A of the frame area FA. .

第1C圖是由轉置區PA的邊緣至框架區FA的邊緣所測得的基板100位於框架區FA的頂面100A翹曲的比較圖。曲線1000表示第1A圖之頂面100A翹曲結果,第1A圖的框架區FA包括多個溝槽104。將不形成溝槽104的轉置頭10假定為對比例(以下稱為「對比例1」),曲線1002表示對比例1之頂面100A翹曲結果。如第1C圖所示之曲線1000,第1A圖的框架區FA距離轉置區PA的邊緣約8公厘的位置的翹曲高度為約4微米。如第1C圖所示之曲線1002,對比例1的框架區FA距離轉置區PA的邊緣的位置的翹曲高度為約18微米,由此可知,對比例1的框架區FA的翹曲程度大於第1A圖的框架區FA的翹曲程度。此結果證實,本揭露的轉置頭10確實可藉由設置溝槽104自頂面100A延伸至基板100中且溝槽104環繞轉置區PA,以抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變,藉此確保轉置區PA的轉置良率,達到提高轉置頭10的可靠性的效果。 FIG. 1C is a comparison diagram of the warpage of the substrate 100 on the top surface 100A of the frame area FA measured from the edge of the transposed area PA to the edge of the frame area FA. The curve 1000 represents the warping result of the top surface 100A in FIG. 1A, and the frame area FA in FIG. 1A includes a plurality of grooves 104. Assuming that the transposed head 10 without the groove 104 is a comparative example (hereinafter referred to as "comparative example 1"), the curve 1002 represents the warpage result of the top surface 100A of the comparative example 1. Like the curve 1000 shown in FIG. 1C, the warping height of the frame area FA in FIG. 1A at a position about 8 mm from the edge of the transposed area PA is about 4 microns. As shown in the curve 1002 in Fig. 1C, the warping height of the frame area FA of the comparative example 1 from the edge of the transposed area PA is about 18 microns. It can be seen that the degree of warping of the frame area FA of the comparative example 1 The degree of warpage is greater than that of the frame area FA in Figure 1A. This result confirms that the transposition head 10 of the present disclosure can indeed extend from the top surface 100A into the substrate 100 by providing the groove 104 and the groove 104 surrounds the transposition area PA to prevent the substrate 100 from being located on the top surface 100A of the frame area FA. Warping occurs and the edge is deformed, thereby ensuring the transposition yield of the transposition area PA, and achieving the effect of improving the reliability of the transposing head 10.

另外,雖然第1A圖繪示溝槽104的俯視形狀為正 方形,但本發明不限於此。在其他實施例中,溝槽104的俯視形狀也可以是圓形(如第2A圖所示)、三角形(如第2B圖所示)或菱形(如第2C圖所示)。 In addition, although Figure 1A shows that the top view shape of the trench 104 is positive Square, but the invention is not limited to this. In other embodiments, the top-view shape of the groove 104 may also be a circle (as shown in Figure 2A), a triangle (as shown in Figure 2B), or a diamond (as shown in Figure 2C).

第3A圖及第3B圖是依照本揭露另一實施例的轉置頭10a的上視示意圖。第3A圖的轉置頭10a與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。 3A and 3B are schematic top views of a transposition head 10a according to another embodiment of the disclosure. The transposition head 10a of FIG. 3A is similar to the transposition head 10 of FIG. 1A. Therefore, only the main differences between each other will be described below.

請參照第3A圖,轉置頭10a的俯視形狀為正方形,溝槽104a之間具有一間距S,溝槽104a的最大長度L與間距S的比值約在1/5000至5000的範圍中,於溝槽104a的俯視形狀是圓形的實施例中,溝槽104a的最大長度L等於溝槽104a的直徑。如此一來,可以有效使溝槽104a提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。另外,雖然第3A圖繪示溝槽104a的俯視形狀為圓形,但本發明不限於此。在其他實施例中,溝槽104a的俯視形狀也可以是正方形(如第3B圖所示)。 Please refer to Figure 3A, the top view of the transposed head 10a is a square, and there is a gap S between the grooves 104a. The ratio of the maximum length L of the groove 104a to the gap S is approximately in the range of 1/5000 to 5000. In an embodiment where the top-view shape of the groove 104a is circular, the maximum length L of the groove 104a is equal to the diameter of the groove 104a. In this way, the groove 104a can effectively provide the effect of suppressing warpage and edge deformation of the top surface 100A of the substrate 100 located in the frame area FA, thereby ensuring the transposition yield of the transposition area PA. In addition, although FIG. 3A shows that the top-view shape of the trench 104a is circular, the present invention is not limited to this. In other embodiments, the top view shape of the trench 104a may also be a square (as shown in FIG. 3B).

第4圖是依照本揭露另一實施例的轉置頭10b的上視示意圖。第4圖的轉置頭10b與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。 FIG. 4 is a schematic top view of a transposition head 10b according to another embodiment of the disclosure. The transposition head 10b of Fig. 4 is similar to the transposition head 10 of Fig. 1A. Therefore, only the main differences between each other will be described below.

請參照第4圖,溝槽104b自轉置區PA的邊緣延伸至基板100的邊緣,溝槽104b具有相對的第一端點E1及第二端點E2,第二端點E2比第一端點E1更遠離凸塊102,溝槽104b的數量與第二端點E2的連線長度的比值約在0.1個/公厘至100個/公厘的範圍中,第二端點E2位於基板100的邊緣,因此也可以視為是溝槽104b的數量與基板100的圓周長的比值約在0.1 個/公厘至100個/公厘的範圍中。如此一來,可以有效使溝槽104b提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。 Referring to FIG. 4, the trench 104b extends from the edge of the transposed area PA to the edge of the substrate 100. The trench 104b has a first end E1 and a second end E2 opposite to each other. The second end E2 is greater than the first end E1 is farther away from the bump 102, the ratio of the number of grooves 104b to the length of the line of the second end E2 is approximately in the range of 0.1/mm to 100/mm, and the second end E2 is located on the substrate 100 Therefore, it can also be considered that the ratio of the number of grooves 104b to the circumference of the substrate 100 is about 0.1 In the range of pieces/mm to 100 pieces/mm. In this way, the groove 104b can effectively provide the effect of suppressing warpage and edge deformation of the top surface 100A of the substrate 100 in the frame area FA, thereby ensuring the transposition yield of the transposition area PA.

第5A圖是依照本揭露另一實施例的轉置頭10c的上視示意圖。第5B圖是第5A圖沿剖線B-B’的剖面示意圖。第5A圖的轉置頭10c與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。 FIG. 5A is a schematic top view of a transposition head 10c according to another embodiment of the disclosure. Figure 5B is a schematic cross-sectional view of Figure 5A along the section line B-B'. The transposition head 10c of FIG. 5A is similar to the transposition head 10 of FIG. 1A. Therefore, only the main differences between each other will be described below.

請同時參照第5A圖及第5B圖,溝槽104c的俯視形狀呈環狀,並以轉置區PA為中心呈同心圓狀,溝槽104c的數量與溝槽104c的最大半徑R的比值約在0.1個/公厘至100個/公厘的範圍中。如此一來,可以有效使溝槽104c提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。溝槽104c的深度H自轉置區PA的邊緣朝基板100的邊緣逐漸變小,藉此可提高轉置頭10c的脫模容易度,而避免框架區FA變形。 Please refer to FIGS. 5A and 5B at the same time. The top view of the groove 104c is annular and concentric with the transposed area PA as the center. The ratio of the number of grooves 104c to the maximum radius R of groove 104c is approximately In the range of 0.1 pcs/mm to 100 pcs/mm. In this way, the trench 104c can effectively provide the effect of suppressing warpage and edge deformation of the top surface 100A of the substrate 100 located in the frame area FA, thereby ensuring the transposition yield of the transposition area PA. The depth H of the groove 104c gradually becomes smaller from the edge of the transposition area PA toward the edge of the substrate 100, thereby improving the ease of demolding of the transposition head 10c and avoiding deformation of the frame area FA.

第6A圖至第6D圖是依照本揭露另一實施例的轉置頭10d的上視示意圖。第6A圖的轉置頭10d與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。 6A to 6D are schematic top views of a transposition head 10d according to another embodiment of the disclosure. The transposition head 10d of Fig. 6A is similar to the transposition head 10 of Fig. 1A. Therefore, only the main differences between each other will be described below.

請參照第6A圖,溝槽104d自轉置區PA的邊緣延伸至基板100的邊緣,框架區FA在基板100的正投影具有第一面積,溝槽104d在基板100的正投影之總和具有第二面積,第二面積與第一面積的比值約在1x10-7至0.75之間。溝槽104d沿著方向D1及方向D2延伸至基板100的邊緣,方向D1與方向D2相交,如此一來,藉由使轉置頭10d沿著方向D1及方向D2 脫模,可使脫模的容易度提升,抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變。當轉置頭10d轉置目標微型發光二極體(未繪示)於接收基板(未繪示)上,接著與目標微型發光二極體分離,使目標微型發光二極體留在接收基板上,藉由使轉置頭10d沿著方向D1及方向D2與目標微型發光二極體分離,有助於轉置效率的提升。於本實施例中,方向D1與方向D2實質上垂直,但本揭露不限於此。 Referring to FIG. 6A, the groove 104d extends from the edge of the transposed area PA to the edge of the substrate 100, the frame area FA has a first area in the orthographic projection of the substrate 100, and the sum of the orthographic projection of the groove 104d on the substrate 100 has a second area. Area, the ratio of the second area to the first area is about 1x10 -7 to 0.75. The groove 104d extends along the direction D1 and the direction D2 to the edge of the substrate 100, and the direction D1 and the direction D2 intersect. In this way, by demolding the transposed head 10d along the direction D1 and the direction D2, the demolding can be achieved. The ease is improved, and the top surface 100A of the substrate 100 in the frame area FA is prevented from warping and edge deformation. When the translating head 10d transposes the target micro light emitting diode (not shown) on the receiving substrate (not shown), and then separating it from the target micro light emitting diode, leaving the target micro light emitting diode on the receiving substrate By separating the transposing head 10d from the target micro light-emitting diode along the direction D1 and the direction D2, the transposition efficiency can be improved. In this embodiment, the direction D1 and the direction D2 are substantially perpendicular, but the disclosure is not limited thereto.

於其他實施例中,溝槽104d僅沿著方向D3延伸(見第6B圖)。可藉由使轉置頭10d沿著方向D3脫模,使脫模的容易度提升,抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變。於本實施例中,方向D3不同於方向D1、D2,然本揭露不限於此。 In other embodiments, the trench 104d only extends along the direction D3 (see FIG. 6B). By demolding the transposed head 10d along the direction D3, the ease of demolding is improved, and the top surface 100A of the substrate 100 in the frame area FA is prevented from warping and edge deformation. In this embodiment, the direction D3 is different from the directions D1 and D2, but the disclosure is not limited thereto.

另外,雖然第6B圖繪示溝槽104d的俯視形狀為直線狀,但本揭露不限於此。在其他實施例中,溝槽104d的俯視形狀也可以是波浪狀(如第6C圖所示)或連續排列的菱形狀(如第6D圖所示)。 In addition, although FIG. 6B illustrates that the top-view shape of the trench 104d is linear, the disclosure is not limited to this. In other embodiments, the top-view shape of the groove 104d may also be a wave shape (as shown in Figure 6C) or a continuously arranged diamond shape (as shown in Figure 6D).

第7A圖繪示第6A圖至第6D圖的轉置頭10d的溝槽104d的剖面示意圖,基板100具有厚度T,溝槽104e的深度H小於基板100的厚度T,且T>H>5微米(μm),厚度T約在1公厘(mm)至10公厘的範圍中。如此一來,可以有效使溝槽104d提供抑制基板100位於框架區FA的頂面100A(見第6A圖至第6D圖)發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。另外,雖然第7A圖繪示溝槽104d的剖面輪廓外型為矩形,但本揭露不限於此。在其他實施例中,溝槽104d的剖面輪 廓外型也可以是塔形(如第7B圖所示)、圓弧形(如第7C圖所示)、倒三角形(如第7D圖所示)、倒梯形(如第7E圖所示)或梯形(如第7F圖所示)。由於本揭露的溝槽104d不限於剖面輪廓外型,因此可增加製程彈性與方便性。 Fig. 7A shows a schematic cross-sectional view of the groove 104d of the transposition head 10d from Fig. 6A to Fig. 6D. The substrate 100 has a thickness T. The depth H of the groove 104e is smaller than the thickness T of the substrate 100, and T>H>5 Micrometer (μm), the thickness T is approximately in the range of 1 mm (mm) to 10 mm. In this way, the groove 104d can effectively provide the effect of suppressing the warpage and edge deformation of the substrate 100 on the top surface 100A (see Figures 6A to 6D) of the frame area FA, thereby ensuring the transposition of the transposed area PA Yield rate. In addition, although FIG. 7A shows that the cross-sectional profile of the trench 104d is rectangular, the disclosure is not limited to this. In other embodiments, the profile wheel of the groove 104d The profile can also be tower-shaped (as shown in Figure 7B), arc-shaped (as shown in Figure 7C), inverted triangle (as shown in Figure 7D), and inverted trapezoid (as shown in Figure 7E) Or trapezoid (as shown in Figure 7F). Since the groove 104d of the present disclosure is not limited to the profile profile, it can increase the flexibility and convenience of the manufacturing process.

綜上所述,在本揭露所提出之轉置頭中,透過設置溝槽自頂面延伸至基板中,且溝槽環繞轉置區。藉此框架區具有降低的頂面面積,在脫模時,可以增加框架區與模具之間的界面脫模點,使得框架區與模具在脫膜時形成不連續之脫膜動線,抑制基板位於框架區的頂面發生翹曲而邊緣形變,進而確保轉置區的轉置良率。 In summary, in the transposition head proposed in the present disclosure, the groove extends from the top surface into the substrate by providing the groove, and the groove surrounds the transposition area. As a result, the frame area has a reduced top surface area. During demolding, the release point of the interface between the frame area and the mold can be increased, so that the frame area and the mold form a discontinuous stripping line during the stripping process and inhibit the substrate The top surface of the frame area is warped and the edge is deformed, thereby ensuring the transposition yield of the transposition area.

雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.

10‧‧‧轉置頭 10‧‧‧Transposed head

100‧‧‧基板 100‧‧‧Substrate

100A‧‧‧頂面 100A‧‧‧Top surface

102‧‧‧凸塊 102‧‧‧ bump

104‧‧‧溝槽 104‧‧‧Groove

PA‧‧‧轉置區 PA‧‧‧Transpose area

FA‧‧‧框架區 FA‧‧‧Frame Area

A-A’‧‧‧剖線 Section A-A’‧‧‧

Claims (9)

一種轉置頭,包含:一基板,定義有一轉置區及環繞該轉置區之一框架區;以及多個凸塊,設置於該轉置區上,其中該框架區包含多個溝槽,該基板具有相對的一頂面及一底面,該些溝槽自該頂面伸至該基板中,且該些溝槽環繞該轉置區,該些溝槽相對於該轉置區呈點對稱。 A transposition head includes: a substrate defining a transposition area and a frame area surrounding the transposition area; and a plurality of bumps arranged on the transposition area, wherein the frame area includes a plurality of grooves, The substrate has a top surface and a bottom surface opposite to each other, the grooves extend from the top surface into the substrate, and the grooves surround the transposed area, and the grooves are point-symmetrical with respect to the transposed area . 如請求項1所述之轉置頭,其中該些溝槽之間具有一間距,該些溝槽的最大長度與該間距的比值約在1/5000至5000的範圍中。 The transposed head according to claim 1, wherein the grooves have a distance between them, and the ratio of the maximum length of the grooves to the distance is approximately in the range of 1/5000 to 5000. 如請求項1所述之轉置頭,其中該些溝槽具有相對的一第一端點及一第二端點,該第二端點比該第一端點更遠離該轉置區,該些溝槽的數量與該第二端點的連線長度的比值約在0.1個/公厘至100個/公厘的範圍中。 The transposed head according to claim 1, wherein the grooves have a first end and a second end opposite to each other, and the second end is farther from the transposed area than the first end, the The ratio of the number of the grooves to the line length of the second end point is approximately in the range of 0.1 grooves/mm to 100 grooves/mm. 如請求項1所述之轉置頭,其中該些溝槽的數量與該些溝槽的最大半徑的比值約在0.1個/公厘至100個/公厘的範圍中。 The transposed head according to claim 1, wherein the ratio of the number of the grooves to the maximum radius of the grooves is approximately in the range of 0.1/mm to 100/mm. 如請求項1所述之轉置頭,其中該框架區在該基板的正投影具有一第一面積,該些溝槽在該基板的正投影之總和具有一第二面積,該第二面積與該第一面積的比值 約在1x10-7至0.75之間。 The transposed head according to claim 1, wherein the frame area has a first area in the orthographic projection of the substrate, and the sum of the orthographic projections of the grooves on the substrate has a second area, and the second area is The ratio of the first area is about 1×10 -7 to 0.75. 如請求項1所述之轉置頭,其中該些溝槽的一深度為H,該基板的一厚度為T,且T>H>5微米(μm)。 The transposed head according to claim 1, wherein a depth of the grooves is H, a thickness of the substrate is T, and T>H>5 micrometers (μm). 如請求項1所述之轉置頭,其中該些溝槽自該轉置區的邊緣延伸至該基板的邊緣。 The transposition head according to claim 1, wherein the grooves extend from the edge of the transposition area to the edge of the substrate. 如請求項1所述之轉置頭,其中該些溝槽的排列之輪廓形狀與該轉置區的輪廓形狀實質上相同。 The transposed head according to claim 1, wherein the contour shape of the arrangement of the grooves is substantially the same as the contour shape of the transposed area. 如請求項1所述之轉置頭,其中該些溝槽的一深度自該轉置區的邊緣朝該基板的邊緣逐漸變小。 The transposed head according to claim 1, wherein a depth of the grooves gradually decreases from the edge of the transposed area toward the edge of the substrate.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201430986A (en) * 2012-12-14 2014-08-01 Luxvue Technology Corp Micro pick up array with integrated pivot mount

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