TWI716977B - Transfer stamp - Google Patents
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- TWI716977B TWI716977B TW108130107A TW108130107A TWI716977B TW I716977 B TWI716977 B TW I716977B TW 108130107 A TW108130107 A TW 108130107A TW 108130107 A TW108130107 A TW 108130107A TW I716977 B TWI716977 B TW I716977B
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Abstract
Description
本揭露是關於一種轉置頭。 This disclosure is about a transposed head.
微型發光二極體具有微小化,輕薄化,自發光、高亮度與高對比度等優點。微型發光二極體顯示器包括多個發光二極體及驅動電路基板。在微型發光二極體顯示器的製程中,先在生長基板上形成多個微型發光二極體,接著可採用巨量轉移技術將微型發光二極體從生長基板轉置到驅動電路基板,巨量轉移技術可透過彈性轉置頭拾取及放置微型發光二極體,然而。一般而言,彈性轉置頭的製作方法是將高分子材料倒入模具中,高分子材料固化後接著脫模(demolding),藉此得到彈性轉置頭。 Miniature light-emitting diodes have the advantages of miniaturization, lightness and thinness, self-luminescence, high brightness and high contrast. The micro light emitting diode display includes a plurality of light emitting diodes and a driving circuit substrate. In the manufacturing process of the micro light emitting diode display, a plurality of micro light emitting diodes are first formed on the growth substrate, and then the micro light emitting diode can be transferred from the growth substrate to the driving circuit substrate by the mass transfer technology. The transfer technology can pick up and place miniature light-emitting diodes through the flexible transposing head, however. Generally speaking, the manufacturing method of the elastic transposition head is to pour the polymer material into a mold, and the polymer material is cured and then demolded to obtain the elastic transposition head.
脫模時,彈性轉置頭可能會因高分子材料特性而導致無法避免之形變,傳統解決方法之一是墊高轉置頭接觸微型元件的轉置區域,墊高的方法例如以雙重塗佈法形成平台區域於其下方,然後以烘箱使其固化。然而,在固化的過程中空氣可能未完全排出而形成氣泡,導致成型後平台區域的內部或表面有細小的孔洞,影響轉置區對微型發光二極體的轉置良率。 During demolding, the elastic transposition head may be deformed unavoidably due to the properties of polymer materials. One of the traditional solutions is to raise the transposition head to contact the transposition area of the micro-components. The heightening method is for example double coating The method forms the platform area below it, and then cures it in an oven. However, during the curing process, air may not be completely exhausted to form bubbles, resulting in small holes in or on the surface of the platform area after molding, which affects the transposition yield of the micro light emitting diodes in the transposed area.
本揭露提供一種轉置頭,其可確保轉置區對微型發光二極體的轉置良率。 The present disclosure provides a transposing head, which can ensure the transposing yield of the micro light emitting diode by the transposing area.
本揭露的轉置頭包括基板及多個凸塊。基板定義有轉置區及環繞轉置區之框架區。凸塊設置於轉置區上。框架區包括多個溝槽。基板具有相對的頂面及底面,溝槽自頂面伸至基板中,且溝槽環繞轉置區。 The transposed head of the present disclosure includes a substrate and a plurality of bumps. The substrate defines a transposed area and a frame area surrounding the transposed area. The bump is arranged on the transposed area. The frame area includes a plurality of grooves. The substrate has opposite top and bottom surfaces, the groove extends from the top surface into the substrate, and the groove surrounds the transposed area.
基於上述,在本發明所提出的轉置頭中,透過具有多個溝槽的框架區,且溝槽環繞轉置區,在脫模時,可以增加框架區與模具之間的脫模點(peeling point),使得框架區與模具在脫膜時形成不連續之脫膜動線,抑制框架區的頂面發生翹曲而減少轉置區邊緣形變,進而確保轉置區對微型發光二極體的轉置良率。其中,此種轉置頭之應用不限於微型發光二極體的轉置,亦可用於其他半導體元件之轉置及應用上。 Based on the above, in the transposition head proposed in the present invention, through the frame area with multiple grooves, and the grooves surround the transposition area, during demolding, the demolding point between the frame area and the mold can be increased ( peeling point), which makes the frame area and the mold form a discontinuous stripping line during the stripping process, suppresses the warping of the top surface of the frame area and reduces the edge deformation of the transposed area, thereby ensuring that the transposed area is opposite to the micro light emitting diode The transposition yield rate. Among them, the application of this kind of transposed head is not limited to the transposition of miniature light-emitting diodes, and can also be used in transposition and applications of other semiconductor devices.
10、10a、10b、10c、10d‧‧‧轉置頭 10, 10a, 10b, 10c, 10d‧‧‧Transposed head
100‧‧‧基板 100‧‧‧Substrate
100A‧‧‧頂面 100A‧‧‧Top surface
100B‧‧‧底面 100B‧‧‧Bottom
102‧‧‧凸塊 102‧‧‧ bump
104‧‧‧溝槽 104‧‧‧Groove
104a‧‧‧溝槽 104a‧‧‧Groove
104b‧‧‧溝槽 104b‧‧‧Groove
104c‧‧‧溝槽 104c‧‧‧Groove
104d‧‧‧溝槽 104d‧‧‧Groove
A-A’‧‧‧剖線 Section A-A’‧‧‧
B-B’‧‧‧剖線 Section B-B’‧‧‧
D1‧‧‧方向 D1‧‧‧direction
D2‧‧‧方向 D2‧‧‧direction
D3‧‧‧方向 D3‧‧‧direction
E1‧‧‧第一端點 E1‧‧‧First endpoint
E2‧‧‧第二端點 E2‧‧‧second endpoint
FA‧‧‧框架區 FA‧‧‧Frame Area
H‧‧‧深度 H‧‧‧depth
L‧‧‧最大長度 L‧‧‧Maximum length
PA‧‧‧轉置區 PA‧‧‧Transpose area
S‧‧‧間距 S‧‧‧Pitch
T‧‧‧厚度 T‧‧‧Thickness
閱讀以下詳細敘述並搭配對應之圖式,可了解本揭露之多個樣態。需留意的是,圖式中的多個特徵並未依照該業界領域之標準作法繪製實際比例。事實上,所述之特徵的尺寸可以任意的增加或減少以利於討論的清晰性。 Read the following detailed description and match the corresponding drawings to understand many aspects of this disclosure. It should be noted that many of the features in the drawing are not drawn in actual proportions according to the standard practice in the industry. In fact, the size of the feature can be increased or decreased arbitrarily to facilitate the clarity of the discussion.
第1A圖是依照本揭露一實施例的轉置頭的上視示意圖。 FIG. 1A is a schematic top view of a transposition head according to an embodiment of the disclosure.
第1B圖是第1A圖沿剖線A-A’的剖面示意圖。 Figure 1B is a schematic cross-sectional view of Figure 1A along the section line A-A'.
第1C圖是由轉置區的邊緣至框架區所測得的框架區頂面 翹曲的比較圖。 Figure 1C is the top surface of the frame area measured from the edge of the transposed area to the frame area Comparison chart of warpage.
第2A圖至第2C圖依照本揭露另一實施例的轉置頭的上視示意圖。 2A to 2C are schematic top views of a transposition head according to another embodiment of the disclosure.
第3A圖及第3B圖是依照本揭露另一實施例的轉置頭的上視示意圖。 3A and 3B are schematic top views of a transposition head according to another embodiment of the disclosure.
第4圖是依照本揭露另一實施例的轉置頭的上視示意圖。 FIG. 4 is a schematic top view of a transposition head according to another embodiment of the disclosure.
第5A圖是依照本揭露另一實施例的轉置頭的上視示意圖。 FIG. 5A is a schematic top view of a transposition head according to another embodiment of the disclosure.
第5B圖是第5A圖沿剖線B-B’的剖面示意圖。 Figure 5B is a schematic cross-sectional view of Figure 5A along the section line B-B'.
第6A圖至第6D圖是依照本揭露另一實施例的轉置頭的上視示意圖。 6A to 6D are schematic top views of a transposition head according to another embodiment of the disclosure.
第7A圖至第7F圖繪示第6A圖的轉置頭的溝槽的剖面示意圖。 7A to 7F show schematic cross-sectional views of the groove of the transposition head in FIG. 6A.
為讓本發明的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。 In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail in conjunction with the accompanying drawings.
第1A圖是依照本揭露一實施例的轉置頭10(transfer stamp)的上視示意圖。第1B圖是第1A圖沿剖線A-A’的剖面示意圖。請同時參照第1A圖及第1B圖,本揭露實施例的轉置頭10包括基板100以及多個凸塊102。基板100具有相對的頂面100A及底面100B,其中基板100定義有轉置區(Post area)PA及框架區(Frame area)FA,框架區FA環繞轉置區PA,凸塊102設置於轉置區PA上,因此轉置區PA亦稱為凸
塊區。在本實施例中,轉置頭10用以轉置微型發光二極體以製造顯示裝置為例,在其他實施例中亦可用以轉置其他的半導體元件。於本實施例中,轉置頭10的材質例如是聚二甲基矽氧烷(poly dimethyl siloxane;PDMS),但本揭露不限於此,於其他實施例中,轉置頭10可採用具有低楊氏模數(Young’s modulus)的彈性體。凸塊102的材質例如是絕緣材料,例如包括無機材料、有機材料、上述之組合或其堆疊層。
FIG. 1A is a schematic top view of a
第1A圖中還繪示了凸塊102的放大示意圖,凸塊102用以與目標微型發光二極體接觸,進而提取想要的多個目標微型發光二極體。轉置頭10的製作方法例如是將高分子材料倒入模具中,高分子材料固化後接著脫模,藉此得到轉置頭10,其中基板100的頂面100A可視為是轉置頭10接觸模具的面。於本實施例中,框架區FA包括多個溝槽104,於此,溝槽104可作為脫模點。溝槽104自頂面100A延伸至基板100中,且溝槽104環繞轉置區PA。藉此框架區FA具有多個溝槽104,在脫模時,可以增加框架區FA與模具之間的界面脫模點,使得框架區FA與模具在脫膜時形成不連續之脫膜動線,抑制基板100位於框架區FA的頂面100A發生翹曲(warpage)而邊緣形變,進而確保轉置區PA的轉置良率。
FIG. 1A also shows an enlarged schematic diagram of the
於本實施例中,溝槽104的俯視形狀為正方形。溝槽104的排列之輪廓形狀與轉置區PA的輪廓形狀實質上相同。溝槽104相對於轉置區PA呈點對稱。此種方案的對稱溝槽用於平衡脫膜時各個方向的脫膜應力,並增加基板100的頂面100A的面積利用率。亦即,可更有效地利用基板100位於框架
區FA的頂面100A來配置更多的溝槽104,從而可增加框架區FA與模具之間的界面脫模點,使得框架區FA與模具在脫膜時形成不連續之脫膜動線,抑制基板100位於框架區FA的頂面100A發生翹曲(warpage)而邊緣形變,進而確保轉置區PA的轉置良率。
In this embodiment, the top-view shape of the
藉由第1C圖來說明,框架區FA的溝槽104自頂面100A延伸至基板100中且溝槽104環繞轉置區PA可以抑制基板100位於框架區FA的頂面100A發生翹曲而變形。
As illustrated by FIG. 1C, the
第1C圖是由轉置區PA的邊緣至框架區FA的邊緣所測得的基板100位於框架區FA的頂面100A翹曲的比較圖。曲線1000表示第1A圖之頂面100A翹曲結果,第1A圖的框架區FA包括多個溝槽104。將不形成溝槽104的轉置頭10假定為對比例(以下稱為「對比例1」),曲線1002表示對比例1之頂面100A翹曲結果。如第1C圖所示之曲線1000,第1A圖的框架區FA距離轉置區PA的邊緣約8公厘的位置的翹曲高度為約4微米。如第1C圖所示之曲線1002,對比例1的框架區FA距離轉置區PA的邊緣的位置的翹曲高度為約18微米,由此可知,對比例1的框架區FA的翹曲程度大於第1A圖的框架區FA的翹曲程度。此結果證實,本揭露的轉置頭10確實可藉由設置溝槽104自頂面100A延伸至基板100中且溝槽104環繞轉置區PA,以抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變,藉此確保轉置區PA的轉置良率,達到提高轉置頭10的可靠性的效果。
FIG. 1C is a comparison diagram of the warpage of the
另外,雖然第1A圖繪示溝槽104的俯視形狀為正
方形,但本發明不限於此。在其他實施例中,溝槽104的俯視形狀也可以是圓形(如第2A圖所示)、三角形(如第2B圖所示)或菱形(如第2C圖所示)。
In addition, although Figure 1A shows that the top view shape of the
第3A圖及第3B圖是依照本揭露另一實施例的轉置頭10a的上視示意圖。第3A圖的轉置頭10a與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。
3A and 3B are schematic top views of a
請參照第3A圖,轉置頭10a的俯視形狀為正方形,溝槽104a之間具有一間距S,溝槽104a的最大長度L與間距S的比值約在1/5000至5000的範圍中,於溝槽104a的俯視形狀是圓形的實施例中,溝槽104a的最大長度L等於溝槽104a的直徑。如此一來,可以有效使溝槽104a提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。另外,雖然第3A圖繪示溝槽104a的俯視形狀為圓形,但本發明不限於此。在其他實施例中,溝槽104a的俯視形狀也可以是正方形(如第3B圖所示)。
Please refer to Figure 3A, the top view of the transposed
第4圖是依照本揭露另一實施例的轉置頭10b的上視示意圖。第4圖的轉置頭10b與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。
FIG. 4 is a schematic top view of a
請參照第4圖,溝槽104b自轉置區PA的邊緣延伸至基板100的邊緣,溝槽104b具有相對的第一端點E1及第二端點E2,第二端點E2比第一端點E1更遠離凸塊102,溝槽104b的數量與第二端點E2的連線長度的比值約在0.1個/公厘至100個/公厘的範圍中,第二端點E2位於基板100的邊緣,因此也可以視為是溝槽104b的數量與基板100的圓周長的比值約在0.1
個/公厘至100個/公厘的範圍中。如此一來,可以有效使溝槽104b提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。
Referring to FIG. 4, the
第5A圖是依照本揭露另一實施例的轉置頭10c的上視示意圖。第5B圖是第5A圖沿剖線B-B’的剖面示意圖。第5A圖的轉置頭10c與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。
FIG. 5A is a schematic top view of a
請同時參照第5A圖及第5B圖,溝槽104c的俯視形狀呈環狀,並以轉置區PA為中心呈同心圓狀,溝槽104c的數量與溝槽104c的最大半徑R的比值約在0.1個/公厘至100個/公厘的範圍中。如此一來,可以有效使溝槽104c提供抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。溝槽104c的深度H自轉置區PA的邊緣朝基板100的邊緣逐漸變小,藉此可提高轉置頭10c的脫模容易度,而避免框架區FA變形。
Please refer to FIGS. 5A and 5B at the same time. The top view of the
第6A圖至第6D圖是依照本揭露另一實施例的轉置頭10d的上視示意圖。第6A圖的轉置頭10d與第1A圖的轉置頭10相似。因此以下將僅針對彼此之間的主要差異進行說明。
6A to 6D are schematic top views of a
請參照第6A圖,溝槽104d自轉置區PA的邊緣延伸至基板100的邊緣,框架區FA在基板100的正投影具有第一面積,溝槽104d在基板100的正投影之總和具有第二面積,第二面積與第一面積的比值約在1x10-7至0.75之間。溝槽104d沿著方向D1及方向D2延伸至基板100的邊緣,方向D1與方向D2相交,如此一來,藉由使轉置頭10d沿著方向D1及方向D2
脫模,可使脫模的容易度提升,抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變。當轉置頭10d轉置目標微型發光二極體(未繪示)於接收基板(未繪示)上,接著與目標微型發光二極體分離,使目標微型發光二極體留在接收基板上,藉由使轉置頭10d沿著方向D1及方向D2與目標微型發光二極體分離,有助於轉置效率的提升。於本實施例中,方向D1與方向D2實質上垂直,但本揭露不限於此。
Referring to FIG. 6A, the
於其他實施例中,溝槽104d僅沿著方向D3延伸(見第6B圖)。可藉由使轉置頭10d沿著方向D3脫模,使脫模的容易度提升,抑制基板100位於框架區FA的頂面100A發生翹曲而邊緣形變。於本實施例中,方向D3不同於方向D1、D2,然本揭露不限於此。
In other embodiments, the
另外,雖然第6B圖繪示溝槽104d的俯視形狀為直線狀,但本揭露不限於此。在其他實施例中,溝槽104d的俯視形狀也可以是波浪狀(如第6C圖所示)或連續排列的菱形狀(如第6D圖所示)。
In addition, although FIG. 6B illustrates that the top-view shape of the
第7A圖繪示第6A圖至第6D圖的轉置頭10d的溝槽104d的剖面示意圖,基板100具有厚度T,溝槽104e的深度H小於基板100的厚度T,且T>H>5微米(μm),厚度T約在1公厘(mm)至10公厘的範圍中。如此一來,可以有效使溝槽104d提供抑制基板100位於框架區FA的頂面100A(見第6A圖至第6D圖)發生翹曲而邊緣形變的功效,進而確保轉置區PA的轉置良率。另外,雖然第7A圖繪示溝槽104d的剖面輪廓外型為矩形,但本揭露不限於此。在其他實施例中,溝槽104d的剖面輪
廓外型也可以是塔形(如第7B圖所示)、圓弧形(如第7C圖所示)、倒三角形(如第7D圖所示)、倒梯形(如第7E圖所示)或梯形(如第7F圖所示)。由於本揭露的溝槽104d不限於剖面輪廓外型,因此可增加製程彈性與方便性。
Fig. 7A shows a schematic cross-sectional view of the
綜上所述,在本揭露所提出之轉置頭中,透過設置溝槽自頂面延伸至基板中,且溝槽環繞轉置區。藉此框架區具有降低的頂面面積,在脫模時,可以增加框架區與模具之間的界面脫模點,使得框架區與模具在脫膜時形成不連續之脫膜動線,抑制基板位於框架區的頂面發生翹曲而邊緣形變,進而確保轉置區的轉置良率。 In summary, in the transposition head proposed in the present disclosure, the groove extends from the top surface into the substrate by providing the groove, and the groove surrounds the transposition area. As a result, the frame area has a reduced top surface area. During demolding, the release point of the interface between the frame area and the mold can be increased, so that the frame area and the mold form a discontinuous stripping line during the stripping process and inhibit the substrate The top surface of the frame area is warped and the edge is deformed, thereby ensuring the transposition yield of the transposition area.
雖然本發明已以實施例揭露如上,然其並非用以限定本發明,任何所屬技術領域中具有通常知識者,在不脫離本發明的精神和範圍內,當可作些許的更動與潤飾,故本發明的保護範圍當視後附的申請專利範圍所界定者為準。 Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Anyone with ordinary knowledge in the technical field can make some changes and modifications without departing from the spirit and scope of the present invention. The scope of protection of the present invention shall be determined by the scope of the attached patent application.
10‧‧‧轉置頭 10‧‧‧Transposed head
100‧‧‧基板 100‧‧‧Substrate
100A‧‧‧頂面 100A‧‧‧Top surface
102‧‧‧凸塊 102‧‧‧ bump
104‧‧‧溝槽 104‧‧‧Groove
PA‧‧‧轉置區 PA‧‧‧Transpose area
FA‧‧‧框架區 FA‧‧‧Frame Area
A-A’‧‧‧剖線 Section A-A’‧‧‧
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