TWI711915B - 高壓穩壓器 - Google Patents

高壓穩壓器 Download PDF

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TWI711915B
TWI711915B TW108133179A TW108133179A TWI711915B TW I711915 B TWI711915 B TW I711915B TW 108133179 A TW108133179 A TW 108133179A TW 108133179 A TW108133179 A TW 108133179A TW I711915 B TWI711915 B TW I711915B
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transistor
electrically connected
resistor
terminal
voltage regulator
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TW108133179A
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TW202113528A (zh
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劉德華
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奇源科技有限公司
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/18—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using Zener diodes
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
    • H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Nonlinear Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Continuous-Control Power Sources That Use Transistors (AREA)

Abstract

一種高壓穩壓器包含：一第一電阻，具有一接收直流輸入電壓的第一端及一第二端；一第二電阻，電連接在該第一電阻與地間；一第一電晶體，具有一電連接該第一電阻的該第二端的第一端、一接地的第二端及一控制端；一第三電阻，電連接在該第一電晶體的該控制端與地間；一第四電阻，具有一電連接該第一電阻的該第一端的第一端及一第二端；一第二電晶體，具有分別電連接該等第四與第一電阻的該等第二端的一第一端與一控制端，及一第二端；及一第一二極體，具有分別電連接該第一電晶體的該控制端與該第二電晶體的該第二端的一陽極與一陰極。

Description

高壓穩壓器
本發明是有關於一種穩壓器，特別是指一種高壓穩壓器。
現有高壓穩壓器內的一稽納二極體是直接電連接一高壓輸入端並持續導通，導致該高壓穩壓器具有持續發熱且較耗電的缺點。因此，現有高壓穩壓器仍有改進的空間。
因此，本發明之目的，即在提供一種可減少發熱及耗電的高壓穩壓器。
於是，本發明高壓穩壓器包含第一至第四電阻、第一與第二電晶體，及一第一二極體。
該第一電阻具有一用於接收一高壓的直流輸入電壓的第一端，及一第二端。
該第二電阻電連接在該第一電阻的該第二端與地之間。
該第一電晶體具有一電連接該第一電阻的該第二端的第一端、一接地的第二端，及一控制端。
該第三電阻電連接在該第一電晶體的該控制端與地之間。
該第四電阻具有一電連接該第一電阻的該第一端的第一端，及一第二端。
該第二電晶體具有一電連接該第四電阻的該第二端的第一端、一提供一直流輸出電壓的第二端，及一電連接該第一電阻的該第二端的控制端。
該第一二極體具有一電連接該第一電晶體的該控制端的陽極，及一電連接該第二電晶體的該第二端的陰極。
本發明之功效在於：該第一二極體不會直接接收該直流輸入電壓，進而該第一二極體不會一直導通，使得本發明高壓穩壓器相較於現有高壓穩壓器可減少發熱及耗電。
在本發明被詳細描述之前，應當注意在以下的說明內容中，類似的元件是以相同的編號來表示。
>第一實施例>
參閱圖1，本發明高壓穩壓器的一第一實施例包含第一至第四電阻10~13、第一與第二電晶體14、15、第一與第二二極體16、17，及一電容18。
該第一電阻10具有一用於接收一高壓的直流輸入電壓Vi的第一端，及一第二端。在本實施例中，該直流輸入電壓Vi為，例如，100V~240V。
該第二電阻11電連接在該第一電阻10的該第二端與地之間。
該第一電晶體14具有一電連接該第一電阻10的該第二端的第一端、一接地的第二端，及一控制端。
該第三電阻12電連接在該第一電晶體14的該控制端與地之間。
該第四電阻13具有一電連接該第一電阻10的該第一端的第一端，及一第二端。
該第二電晶體15具有一電連接該第四電阻13的該第二端的第一端、一提供一直流輸出電壓Vo的第二端，及一電連接該第一電阻10的該第二端的控制端。
該第一二極體16具有一電連接該第一電晶體14的該控制端的陽極，及一電連接該第二電晶體15的該第二端的陰極。
該第二二極體17具有一接地的陽極，及一電連接該第二電晶體15的該第二端的陰極。
該電容18電連接在該第二電晶體15的該第二端與地之間。
需說明的是，在本實施例中，該等第一及第二二極體16、17各自為一稽納二極體。該等第一及第二電晶體14、15各自為一N型金氧半場效電晶體，且該N型金氧半場效電晶體的汲極、源極及閘極分別為該等第一及第二電晶體14、15各自的該第一端、該第二端及該控制端。
詳細來說，操作時，當該直流輸出電壓Vo小於該第一二極體16的一稽納電壓時，該第一二極體16不導通，使得該第一電晶體14不導通，該第二電晶體15導通，以致該電容18根據該直流輸出電壓Vo進行充電。當該直流輸出電壓Vo大於等於該第一二極體16的該稽納電壓時，該第一二極體16導通，使得該第一電晶體14導通，該第二電晶體15不導通，該電容18的一跨壓作為該直流輸出電壓Vo。此外，該第二二極體17用於接收該第二電晶體15導通時的一瞬間高壓，以避免該第一電晶體14燒毀。在本實施例中，該第二二極體17的一稽納電壓大於該直流輸出電壓Vo，使得該第二二極體17不導通，進而該第二二極體17不耗電。
>第二實施例>
參閱圖2，本發明該高壓穩壓器的第二實施例與該第一實施例相似，二者不同之處在於：以一第一電晶體14’來取代圖1之該第一電晶體14；及該高壓穩壓器還包含一限流電阻19。
該限流電阻19具有一電連接該第一電晶體14’的該控制端的第一端，及一電連接該第一二極體16之該陽極與該第三電阻12的第二端。
需說明的是，在本實施例中，該第一電晶體14’為一NPN型雙極性電晶體，該NPN型雙極性電晶體的集極、射極及基極分別為該第一電晶體14’的該第一端、該第二端及該控制端。該第二實施例之該高壓穩壓器的操作與該第一實施例之該高壓穩壓器的作動相似，故於此不再贅述。
綜上所述，本發明高壓穩壓器的該等第一及第二二極體16、17不會直接接收該直流輸入電壓Vi，使得該等第一及第二二極體16、17不會一直導通，並且該第一二極體16的一導通電流小於現有高壓穩壓器的一稽納二極體的一導通電流，以及該第二二極體17的該稽納電壓大於該直流輸出電壓Vo可使該第二二極體17幾乎不耗電，如此一來，本發明高壓穩壓器相較於現有高壓穩壓器可減少發熱及耗電。此外，本發明高壓穩壓器具有電路較簡單及成本較低等特點。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍，凡是依本發明申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾，皆仍屬本發明專利涵蓋之範圍內。
10~13:第一至第四電阻 14:第一電晶體 14’:第一電晶體 15:第二電晶體 16:第一二極體 17:第二二極體 18:電容 19:限流電阻 Vi:直流輸入電壓 Vo:直流輸出電壓
本發明之其他的特徵及功效，將於參照圖式的實施方式中清楚地呈現，其中： 圖1是一電路圖，說明本發明高壓穩壓器之一第一實施例；及 圖2是一電路圖，說明本發明高壓穩壓器之一第二實施例。
10~13:第一至第四電阻
14:第一電晶體
15:第二電晶體
16:第一二極體
17:第二二極體
18:電容
Vi:直流輸入電壓
Vo:直流輸出電壓

Claims (8)

  1. 一種高壓穩壓器，包含： 一第一電阻，具有一用於接收一高壓的直流輸入電壓的第一端，及一第二端； 一第二電阻，電連接在該第一電阻的該第二端與地之間； 一第一電晶體，具有一電連接該第一電阻的該第二端的第一端、一接地的第二端，及一控制端； 一第三電阻，電連接在該第一電晶體的該控制端與地之間； 一第四電阻，具有一電連接該第一電阻的該第一端的第一端，及一第二端； 一第二電晶體，具有一電連接該第四電阻的該第二端的第一端、一提供一直流輸出電壓的第二端，及一電連接該第一電阻的該第二端的控制端；及 一第一二極體，具有一電連接該第一電晶體的該控制端的陽極，及一電連接該第二電晶體的該第二端的陰極。
  2. 如請求項1所述的高壓穩壓器，其中，該第一二極體為一稽納二極體。
  3. 如請求項1所述的高壓穩壓器，還包含： 一第二二極體，具有一接地的陽極，及一電連接該第二電晶體的該第二端的陰極。
  4. 如請求項3所述的高壓穩壓器，還包含： 一電容，電連接在該第二電晶體的該第二端與地之間。
  5. 如請求項3所述的高壓穩壓器，其中，該等第一及第二二極體各自為一稽納二極體。
  6. 如請求項5所述的高壓穩壓器，其中，該第二二極體的一稽納電壓大於該直流輸出電壓。
  7. 如請求項1所述的高壓穩壓器，其中，該等第一及第二電晶體各自為一N型金氧半場效電晶體。
  8. 如請求項1所述的高壓穩壓器，其中，該第一電晶體為一NPN型雙極性電晶體，該第二電晶體為一N型金氧半場效電晶體，該高壓穩壓器還包含： 一限流電阻，具有一電連接該第一電晶體的該控制端的第一端，及一電連接該第一二極體之該陽極與該第三電阻的第二端。
TW108133179A 2019-09-16 2019-09-16 高壓穩壓器 TWI711915B (zh)

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US16/773,714 US11061425B2 (en) 2019-09-16 2020-01-27 Voltage stabilizer

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