TWI709821B - Composition for hard mask - Google Patents

Abstract

The present invention is related to a composition for hard mask, more specifically, the composition for hard mask can form a under layer film (hard mask) having excellent thermoresistance by comprising a compound having at least 2 tertiary alcohol group in the molecule and solvent.

Description

Composition for hard mask

The present invention relates to a composition for hard masks.

In the industry of microelectronics and microstructures (for example, micromachines, magnetoresist heads, etc.), there is a continuous demand for reducing the size of the structure shape. In addition, in the microelectronics industry, there is a requirement to reduce the size of microelectronic equipment and provide more circuits for a specified chip size.

In order to reduce the shape and size, effective photolithography is essential.

In a typical photolithography process, first, after coating a resist on the underlying material, radiation exposure is performed to form a resist layer. Next, the resist layer is developed with a developer to form a patterned resist layer, and the substances present in the openings of the patterned resist layer are etched to transfer the pattern to the underlying material. After the transfer is completed, the following process is followed: the photosensitive resist is exposed in a pattern to form a patterned resist layer. Next, the exposed resist layer is brought into contact with an arbitrary substance (typically an aqueous alkaline developer) to develop the image. Then, by etching the substance present in the opening of the patterned resist layer, the pattern is transferred to Lower material. After the transfer, the remaining resist layer is removed.

In order to minimize the reflectivity between the resist layer and the underlying material, anti-refractive coating (ARC) is used in most of the above-mentioned photolithography processes to increase the resolution. However, after patterning, in the process of etching the anti-reflective coating, the resist layer is also consumed in a large amount, and it may be necessary to add patterning in the subsequent etching step.

In other words, in the case of a part of the photolithography imaging process, the resist used may not have sufficient resistance to the etching step to allow the predetermined pattern to be effectively transferred to the underlying material. Therefore, in the case of an ultra-thin film resist layer using a resist material to be extremely thin, in the case of thick substrates to be etched, in the case of requiring a deep etching depth, or in the case of a predetermined underlying material, a specific In the case of an etchant, a resist underlayer film is used.

The resist underlayer film functions as an intermediate layer between the resist layer and the underlayer material that can be patterned from the patterned resist by transfer. The resist underlayer film needs to withstand the etching process required to receive the pattern from the patterned resist layer and transfer the pattern to the underlying material.

In order to form such an underlayer film, many materials have been tried, but the improvement of the underlayer film composition continues to be required.

Conventionally, it is difficult to apply the material for forming the underlayer film to the substrate. Therefore, for example, chemical or physical vapor deposition, special solvent, or high-temperature firing are used. However, these have the problem of high cost. Therefore, in recent years, research has been conducted on an underlayer film composition that can be applied by a spin coating method that does not require high-temperature firing.

In addition, research is being conducted on the composition of the lower layer film that can be easily selectively etched using the resist layer formed on the upper layer as a mask, especially when the lower layer is a metal layer. Using the lower layer film as a mask, the etching process required for patterning the lower layer is resistant.

Korean Patent Publication No. 2010-0082844 discloses a technique related to a resist underlayer film forming composition.

[Prior Art Literature] [Patent Literature]

Korean Published Patent No. 2010-0082844

The object of the present invention is to provide a hard mask composition capable of forming a resist underlayer film (hard mask) excellent in heat resistance.

1. A hard mask composition comprising a compound containing two or more tertiary alcohol groups in the molecule and a solvent.

(式中，n為1至10，R₁和R₂各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₁各自獨立地為碳原子數6至20的伸芳基，Ar₂和Ar₃各自獨立地為碳原子數6至20的芳基，上述Ar₁、Ar₂、Ar₃、R₁和R₂可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基)

(式中，n為2至10，R₃各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₄為n個氫原子可被取代的碳原子數6至20的芳基，Ar₅各自獨立地為碳原子數6至20的芳基，上述R₃、Ar₄和Ar₅可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基)

(式中，R₄和R₅各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₆和Ar₇各自獨立地為碳原子數6至20的伸芳基，上述R₄、R₅、Ar₆和Ar₇可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基。 2. The hard mask composition as described in 1 above, wherein the compound is at least one selected from the group consisting of compounds represented by the following chemical formula 1 to chemical formula 3:

(In the formula, n is 1 to 10, R ₁ and R ₂ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar _{1 is} each independently having 6 carbon atoms. Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms. The above-mentioned Ar ₁ , Ar ₂ , Ar ₃ , R ₁ and R ₂ may each independently be -OH,- _{OR a, -OAr a, -R a} , -Ar a further substituted with the -R _a number of carbons in the aliphatic hydrocarbon group having 1 to 6, said -Ar _a carbon atoms, an aryl group having 6 to 20)

(In the formula, n is 2 to 10, R _{3 is} each independently an aliphatic hydrocarbon group with 1 to 6 carbon atoms or an aryl group with 6 to 20 carbon atoms, and Ar ₄ is a carbon atom whose n hydrogen atoms may be substituted An aryl group having 6 to 20, Ar _{5 is} each independently an aryl group having 6 to 20 carbon atoms, and the above-mentioned R ₃ , Ar ₄ and Ar ₅ may each independently be -OH, -OR _a , -OAr _a ,- R _a, -Ar _a further substituted with the -R _a number of carbon atoms from 1 to 6 aliphatic hydrocarbon group, said -Ar _a carbon atoms, an aryl group having 6 to 20)

(In the formula, R ₄ and R ₅ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar ₆ and Ar ₇ are each independently having 6 to 20 carbon atoms. An aryl group, the above-mentioned R ₄ , R ₅ , Ar ₆ and Ar ₇ may be independently further substituted by -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and the above -R _a is the number of carbon atoms An aliphatic hydrocarbon group of 1 to 6, and the above -Ar _a is an aryl group having 6 to 20 carbon atoms.

3. The hard mask composition according to the above 2, wherein the above Ar ₁ , Ar ₆ and Ar ₇ are each independently a phenylene, naphthalenediyl, anthracene diyl, stilbene diyl or pyrene diyl.

4. The hard mask composition according to the above 2, wherein the Ar ₂ , Ar ₃ and Ar ₅ are each independently a phenyl group, a naphthyl group, an anthryl group, a stilbene group or a pyrenyl group.

5. The hard mask composition according to the above 2, wherein the Ar ₄ is phenyl, naphthyl, anthracenyl, stilbene, or pyrenyl.

6. The hard mask composition according to 2 above, wherein R ₁ to R ₅ are each independently a methyl group, a vinyl group, an allyl group or a phenyl group.

7. The hard mask composition as described in 1 above, with respect to the total weight of the composition, contains 10 to 70% by weight of the above-mentioned compound and 30 to 90% by weight of the above-mentioned solvent.

8. The hard mask composition as described in 1 above, further comprising at least one of a crosslinking agent and a catalyst.

The composition for a hard mask film of the present invention improves the crosslinkability and suppresses the excessive progress of the crosslinking reaction, and can form a polymer for a resist underlayer film having excellent heat resistance.

In addition, according to the hard mask composition of one embodiment of the present invention, by increasing the carbon content (C%) in the compound, it is possible to form a polymer for a resist underlayer film with excellent etching selectivity.

One embodiment of the present invention relates to a hard mask composition containing a compound containing two or more tertiary alcohol groups in the molecule and a solvent, thereby being able to form a resist underlayer film (hard mask) having excellent heat resistance.

Hereinafter, specific embodiments of the present invention will be described. However, this is only an example, and the present invention is not limited to this.

In the present invention, when there is an isomer of a compound or resin represented by a chemical formula, the compound or resin represented by the corresponding formula means a representative chemical formula including the isomer.

<Composition for Hard Mask>

The hardmask composition of the present invention contains a compound (A) containing two or more tertiary alcohol groups in the molecule and a solvent (B).

Compound (A)

By including the compound (A) in the present invention, a hard mask formed from the composition for a hard mask of the present invention can exhibit excellent heat resistance.

Specifically, compound (A) contains two or more tertiary alcohol groups in the molecule. Such tertiary alcohol groups are more likely to undergo Sn1 reaction than secondary alcohol groups or primary alcohol groups. Therefore, it is used for hard masks. When the composition is used to manufacture a hard mask, the crosslinkability can be improved and the heat resistance can be made excellent. In addition, the tertiary alcohol suppresses the excessive progress of the crosslinking reaction and is not sensitive to the oxidation reaction. Therefore, when used in the manufacture of a hard mask, the heat resistance of the manufactured hard mask is improved.

Furthermore, by including the above-mentioned compound (A), the present invention can improve the etching resistance (etch selectivity) to halogen gas due to the high carbon content (C%) in the compound.

(式中，n為1至10，R₁和R₂各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₁各自獨立地為碳原子數6至20的伸芳基，Ar₂和Ar₃各自獨立地為碳原子數6至20的芳基， 上述Ar₁、Ar₂、Ar₃、R₁和R₂可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基) From such a point of view, for example, the aforementioned compound (A) may be at least one selected from the group consisting of compounds represented by the following chemical formula 1 to chemical formula 3:

(In the formula, n is 1 to 10, R ₁ and R ₂ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar _{1 is} each independently having 6 carbon atoms. Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms, and the above Ar ₁ , Ar ₂ , Ar ₃ , R ₁ and R ₂ may each independently be -OH,- _{OR a, -OAr a, -R a} , -Ar a further substituted with the -R _a number of carbons in the aliphatic hydrocarbon group having 1 to 6, said -Ar _a carbon atoms, an aryl group having 6 to 20)

(式中，n為2至10，R₃各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₄為n個氫原子可被取代的碳原子數6至20的芳基，Ar₅各自獨立地為碳原子數6至20的芳基，上述R₃、Ar₄和Ar₅可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基)

(In the formula, n is 2 to 10, R _{3 is} each independently an aliphatic hydrocarbon group with 1 to 6 carbon atoms or an aryl group with 6 to 20 carbon atoms, and Ar ₄ is a carbon atom whose n hydrogen atoms may be substituted An aryl group having 6 to 20, Ar _{5 is} each independently an aryl group having 6 to 20 carbon atoms, and the above-mentioned R ₃ , Ar ₄ and Ar ₅ may each independently be -OH, -OR _a , -OAr _a ,- R _a, -Ar _a further substituted with the -R _a number of carbon atoms from 1 to 6 aliphatic hydrocarbon group, said -Ar _a carbon atoms, an aryl group having 6 to 20)

(式中，R₄和R₅各自獨立地為碳原子數1至6的脂肪族烴基或碳原子數6至20的芳基，Ar₆和Ar₇各自獨立地為碳原子數6至20的伸芳基，上述R₄、R₅、Ar₆和Ar₇可各自獨立地被-OH、-OR_a、-OAr_a、-R_a、-Ar_a進一步取代，上述-R_a為碳原子數1至6 的脂肪族烴基，上述-Ar_a為碳原子數6至20的芳基)。

(In the formula, R ₄ and R ₅ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar ₆ and Ar ₇ are each independently having 6 to 20 carbon atoms. An aryl group, the above-mentioned R ₄ , R ₅ , Ar ₆ and Ar ₇ may be independently further substituted by -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and the above -R _a is the number of carbon atoms 1 to 6 aliphatic hydrocarbon group, the above -Ar _a is an aryl group having 6 to 20 carbon atoms).

In the formula, "each independently" means that even if the substituents are represented by the same symbol in one compound, if their positions are different, they may be other substituents. For example, in Chemical Formula 1, if R ₂ or Ar ₁ is present in different repeating units in one compound, they may be substituents different from each other within the range described above.

As mentioned above, since Ar ₁ to Ar ₇ are aromatic, they can further improve crosslinkability, and increase the carbon content (C%) in the compound to be high, which can form a resist underlayer film with excellent etching selectivity. Polymer.

In the present invention, a preferable example of the aliphatic hydrocarbon group having 1 to 6 carbon atoms may be an alkyl group having 1 to 6 carbon atoms, a vinyl group, or an allyl group.

In the present invention, preferably Ar ₁ to Ar ₇ and R ₁ to R ₅ may be as follows.

For example, Ar ₁ , Ar ₆ and Ar ₇ may each independently be phenylene, naphthalenediyl, anthracene diyl, stilbene diyl or pyrene diyl, and Ar ₂ , Ar ₃ and Ar ₅ may each independently be phenyl , Naphthyl, anthryl, stilbyl, or pyrenyl. In addition, Ar ₄ may be phenyl, naphthyl, anthryl, stilbyl, or pyrenyl.

In addition, in the present invention, preferably R ₁ to R ₅ may each independently be a methyl group, a vinyl group, an allyl group or a phenyl group, and more preferably a vinyl group, an allyl group or a phenyl group.

In the case where R ₁ to R ₅ according to an embodiment of the present invention are each independently a vinyl group or an allyl group, since the compound (A) has a crosslinkable functional group, the heat resistance can be further improved.

In addition, in the case where R ₁ to R ₅ according to an embodiment of the present invention contain a phenyl group, since the carbon content (C%) in the compound is significantly increased, it is possible to form a resist underlayer film with further improved etching selectivity. Polymer.

More preferably, in the hard mask composition according to an embodiment of the present invention, the compound (A) may be at least one selected from the group consisting of the following chemical formulas 11 to 31:

For example, the compound (A) according to an embodiment of the present invention can be produced by a Grignard reaction in which a ketone and a Grignard reagent are reacted. Therefore, the compound (A) according to this embodiment can be stably produced under mild conditions.

The content of the compound (A) according to one embodiment of the present invention is not particularly limited as long as it can achieve the purpose of the present invention. For example, the total weight of the composition may be 10 to 70% by weight. When the above range is satisfied, the above The effect of the present invention is the most outstanding.

Solvent (B)

The solvent according to one embodiment of the present invention is not particularly limited as long as it is an organic solvent having sufficient solubility for the compound (A). For example, propylene glycol monomethyl ether acetate (PGMEA), Propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone (GBL), acetyl acetone, etc., preferably propylene glycol monomethyl ether Propylene glycol monormethyl ether acetate (PGMEA).

The content of the solvent (B) according to one embodiment of the present invention is not particularly limited as long as it can achieve the purpose of the present invention. The composition according to the present invention may contain the balance except for the reaction components including compound (A) and other additives . For example, in the case of using only the compound (A) in the composition, the solvent may be 30 to 90% by weight with respect to the total weight of the composition. When the above range is satisfied, the effect of the present invention described above can be effectively expressed.

Crosslinking agent and catalyst

In addition, the composition for a hard mask according to one embodiment of the present invention may further contain at least one of a crosslinking agent and a catalyst as necessary.

The above-mentioned cross-linking agent can be used to cross-link the repeating unit of the polymer by heating in a reaction that uses the generated acid to generate a catalytic effect, as long as it can interact with the compound (A) in a manner that uses the generated acid to generate a catalytic effect. The crosslinking agent that reacts with the hydroxyl group of) is not particularly limited. As a representative example of such a crosslinking agent, any one selected from the group consisting of melamine, amine-based resin, ethanol compound, and diepoxy compound can be used.

By further including the above-mentioned crosslinking agent, the curing characteristics of the hard mask composition can be further enhanced.

As a specific example of the above-mentioned crosslinking agent, an etherified amine-based resin, such as methylated or butylated melamine (as specific examples, there are N-methoxymethyl-melamine or N-butoxy Methyl-melamine) and methylated or butylated urea (urea) resin (as specific examples, Cymel U-65 resin or UFR 80 resin), the ethanol derivative represented by the following chemical formula 41 (as Specific examples include Powderlink 1174), bis(hydroxymethyl)-p-cresol compound represented by Chemical Formula 42, and the like. In addition, the diepoxy compound represented by the following Chemical Formula 43 and the melamine compound represented by the following Chemical Formula 44 can also be used as a crosslinking agent.

As the above-mentioned catalyst, an acid catalyst or a basic catalyst can be used.

The above-mentioned acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, organic acids such as p-toluene sulfonic acid monohydrate can be used, and in addition, TAG (thermal acid generator) compounds having storage stability can be cited. The thermal acid generator is an acid generator compound that releases acid during heat treatment. For example, pyridiniump-toluene sulfonate can be used. sulfonate), 2,4,4,6-tetrabromocyclohexadienone, benzoin tosylate, 2-nitrobenzyl tosylate, alkyl esters of organic sulfonic acids, etc.

As the above-mentioned basic catalyst, any one selected from NH ₄ OH or ammonium hydroxide represented by NR ₄ OH (R is an alkyl group) can be used.

In addition, other photosensitive catalysts known in the resist technical field can also be used as long as they have compatibility with other components of the antireflection composition.

In the case where the above-mentioned cross-linking agent is included, relative to 100 parts by weight of the above-mentioned compound (A), the content of the cross-linking agent may be 1 part by weight to 30 parts by weight, preferably 5 parts by weight to 20 parts by weight, more preferably It can be 5 parts by weight to 10 parts by weight. In addition, in the case where the above-mentioned catalyst is included, the content of the catalyst may be 0.001 parts by weight to 5 parts by weight, preferably 0.1 parts by weight to 2 parts by weight, and more preferably, it may be 0.001 parts by weight to 5 parts by weight relative to 100 parts by weight of the compound (A). 0.1 part by weight to 1 part by weight.

When the content of the crosslinking agent is within the above range, it is possible to obtain appropriate crosslinking characteristics while maintaining the optical characteristics of the formed underlayer film.

In addition, when the content of the catalyst is in the above range, appropriate crosslinking characteristics can be obtained, and acidity that affects storage stability can be appropriately maintained.

additive

If necessary, the hard mask composition of the present invention may further contain additives such as surfactants. As the above-mentioned surfactant, alkane can be used Butylbenzene sulfonate, alkylpyridinium salt, polyethylene glycols, quaternary ammonium salt, etc., but not limited thereto. At this time, the content of the surfactant may be 0.1 parts by weight to 10 parts by weight relative to 100 parts by weight of the aforementioned compound (A). When the content of the above-mentioned surfactant is in the above-mentioned range, it is possible to obtain appropriate crosslinking properties while maintaining the optical properties of the formed underlayer film.

Hereinafter, in order to help understand the present invention, preferred embodiments are provided. However, these embodiments are only examples of the present invention and do not limit the scope of the accompanying patent application. Various embodiments can be made within the scope of the present invention and the scope of technical ideas. Variations and modifications are obvious to those skilled in the art, and such variations and modifications of course also belong to the scope of the attached patent application.

Examples and comparative examples

The hard mask composition of the composition and content (weight%) described in the following Table 1 and Table 2 was manufactured.

A-1:

A-2:

A-3:

A-4:

A-5:

A'-1:

A'-2:

A'-3:

B-1: propylene glycol monomethyl ether acetate (PGMEA)

C-1: N-Methoxymethyl-Melamine

D-1: pyridine p-toluenesulfonate

E-1: Triethylene glycol

Experimental example 1. Heat resistance evaluation

The composition was vacuum dried to remove the solvent, a part of the sample was taken, and under nitrogen, the mass loss rate was measured while the temperature was raised to 800°C by thermogravimetric analysis (TGA) = {(initial mass-800°C Quality)/initial quality)x100%

<Judgment of heat resistance>

◎: The quality loss rate is less than 10%

○: The quality loss rate is more than 10% and less than 15%

△: The quality loss rate is over 15% and less than 25%

×: The quality loss rate is more than 25%

2. Etching selectivity

Using the spin coating method, the sample solutions prepared in Examples 1 to 14 and Comparative Examples 1 to 5 were respectively coated on a silicon wafer, and baked at 200° C. for 60 seconds to form a film with a thickness of 1500 Å. On each of the formed films, a photoresist for ArF was coated, baked at 110°C for 60 seconds, and exposed using ASML (XT: 1450G, NA 0.93) exposure equipment, and then exposed using TMAH (2.38wt % Aqueous solution) were developed separately to obtain 60nm line and space patterns.

The obtained patterned test piece was further cured at 110°C for 60 seconds. Using CHF ₃ /CF ₄ mixed gas, the test piece was dry-etched for 20 seconds, and each section was observed by FE-SEM to measure the etching rate. The etching resistance to halogen plasma, that is, etching selectivity, was determined.

<Judgment of Etching Resistance to Halogen Gas>

◎: The etching speed is less than 10A/Sec

○: The etching rate is 10A/Sec or more and less than 11A/Sec

△: The etching rate is above 11A/Sec and less than 12A/Sec

×: The etching rate is 12A/Sec or more

With reference to Table 3, it can be confirmed that both the heat resistance and the etching selectivity of the examples are excellent, and the heat resistance and the etching selectivity of the comparative examples are both poor.

Claims (7)

A hard mask composition comprising a compound containing two or more tertiary alcohol groups in the molecule and a solvent, wherein the compound is at least one selected from the group consisting of compounds represented by the following chemical formulas 1 to 3:

In the formula, n is 1 to 10, R ₁ and R ₂ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar _{1 is} each independently having 6 to carbon atoms. 20, Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms, and the Ar ₁ , Ar ₂ , Ar ₃ , R ₁ and R ₂ may each independently be -OH,- OR _a , -OAr _a , -R _a , -Ar _{a are} further substituted, the -R _a is an aliphatic hydrocarbon group having 1 to 6 carbon atoms, and the -Ar _a is an aryl group having 6 to 20 carbon atoms,

In the formula, n is 2 to 10, R _{3 is} each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar ₄ is the number of carbon atoms in which n hydrogen atoms can be substituted 6 to 20 aryl groups, Ar _{5 is} each independently an aryl group having 6 to 20 carbon atoms, and R ₃ , Ar ₄ and Ar ₅ may each independently be -OH, -OR _a , -OAr _a ,- R _a, -Ar _a further substituted, the -R _a carbon atom of the aliphatic hydrocarbon group having 1 to 6, said -Ar _a carbon atoms an aryl group having 6 to 20,

In the formula, R ₄ and R ₅ are each independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms, and Ar ₆ and Ar ₇ are each independently an extension having 6 to 20 carbon atoms. Aryl, the R ₄ , R ₅ , Ar ₆ and Ar ₇ may each be independently further substituted by -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and the -R _a is a carbon atom An aliphatic hydrocarbon group having 1 to 6, and the -Ar _a is an aryl group having 6 to 20 carbon atoms. The hard mask composition according to item 1 of the patent application, wherein the Ar ₁ , Ar ₆ and Ar ₇ are each independently a phenylene, naphthalenediyl, anthracene diyl, stilbene diyl or pyrene diyl . The hard mask composition according to the first item of the patent application, wherein the Ar ₂ , Ar ₃ and Ar ₅ are each independently a phenyl group, a naphthyl group, an anthryl group, a stilbene group or a pyrenyl group. The hard mask composition according to item 1 of the scope of the patent application, wherein the Ar ₄ is phenyl, naphthyl, anthryl, stilbene or pyrenyl. The hard mask composition according to item 1 of the scope of patent application, wherein each of R ₁ to R _{5 is} independently a methyl group, a vinyl group, an allyl group or a phenyl group. The hard mask composition as described in item 1 of the scope of the patent application, wherein the total weight of the composition contains 10 to 70% by weight of the compound and 30 to 90% by weight of the solvent. The hard mask composition as described in item 1 of the scope of patent application, which further comprises at least one of a crosslinking agent and a catalyst.