KR20170123881A - Composition for hard mask - Google Patents

Abstract

The present invention relates to a hard mask composition. More specifically, the hard mask composition is used to form a resist under-layer film (or a hard mask) with excellent heat resistance. According to an embodiment of the present invention, the hard mask composition includes a compound containing two or more tertiary alcohol groups in the molecular structure and a solvent. The compound is selected from a group consisting of compounds represented by chemical formula 1 to 3.

Description

COMPOSITION FOR HARD MASK [0001]

The present invention relates to a composition for a hard mask.

BACKGROUND OF THE INVENTION In the industrial field, such as the microelectronics industry and micro-scopic structures (e.g., micromachines, magnetoresist heads, etc.), there is a continuing need to reduce the size of structural features. There is also a need in the microelectronics industry to reduce the size of microelectronic devices and to provide a greater amount of circuitry for a given chip size.

Effective lithographic techniques are essential to reduce geometry size.

In a typical lithographic process, first, a resist is applied to a lower layer material, and then exposed to radiation to form a resist layer. The resist layer is then developed with a developer to form a patterned resist layer, and the material in the openings of the patterned resist layer is etched to transfer the pattern to the underlying material. After the transfer is completed, a patterned resist layer is exposed by patterning to form a patterned resist layer. The image is then developed by contacting the exposed resist layer with any material (typically an aqueous alkali developer). The pattern is then transferred to the underlying material by etching the material within the openings of the patterned resist layer. After the transfer is completed, the remaining resist layer is removed.

Most of the lithographic processes use an anti-refractive coating (ARC) to minimize the reflectivity between the resist layer and underlying material. However, in the process of etching the antireflective coating after patterning, a large amount of resist layer may also be consumed, which may require additional patterning during subsequent etching steps.

In other words, in some lithographic imaging processes, the resist used may not have sufficient resistance to the etching step to such an extent that it can effectively transfer a predetermined pattern to the underlying material. Therefore, when an ultra-thin resist layer using an extremely thin resist material is required, a substrate to be etched is thick, a deep etching depth is required, or a specific etchant is required for a predetermined lower layer material A resist underlayer film has been used.

The resist underlayer film serves as an intermediate layer between the resist layer and the underlying layer material that can be patterned by transfer from the patterned resist, the underlayer resist layer containing a pattern from the patterned resist layer and transferring the pattern to the underlying layer material To withstand the etching process necessary to achieve the required etching process.

Many materials have been tried to form these undercoats, but there is still a continuing need for improved undercoat compositions.

Conventionally, the materials for forming the undercoat layer are difficult to apply to the substrate. For example, chemical or physical vapor deposition, special solvent, or high temperature baking is used, but these are costly. In recent years, studies on a lower layer film composition that can be applied by a spin-on coating technique have been conducted without necessity of high temperature firing.

It is also possible to selectively etch selectively using the resist layer formed on the upper layer, and at the same time, the lower layer film composition which is resistant to the etching process necessary for patterning the lower layer using the lower layer film as a mask Research is underway.

Korean Patent Laid-Open No. 10-2010-0082844 discloses a technique relating to a resist underlayer film forming composition.

Korean Patent Publication No. 10-2010-0082844

It is an object of the present invention to provide a composition for a hard mask capable of forming a resist underlayer film (hard mask) excellent in heat resistance.

1. A hard mask composition comprising a compound comprising two or more tertiary alcohol groups in a molecule and a solvent.

2. The hard mask composition according to 1 above, wherein said compound is at least one selected from the group consisting of compounds represented by the following Chemical Formulas 1 to 3:

[Chemical Formula 1]

(Wherein n is 1 to 10,

R ₁ and R ₂ are independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₁ is independently an arylene group having 6 to 20 carbon atoms,

Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms,

Wherein _{Ar 1, Ar 2, Ar 3} , R 1 and R ₂ are independently _{-OH, -OR a, -OAr a,} -R a, may further be substituted by -Ar _a, and the -R _a is C 1 to each other An aliphatic hydrocarbon group having 6 to 20 carbon atoms and -Ar _a is an aryl group having 6 to 20 carbon atoms,

(2)

(Wherein n is 2 to 10,

R ₃ is independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₄ is an aryl compound having 6 to 20 carbon atoms in which n hydrogen atoms can be substituted,

Ar ₅ is independently an aryl group having 6 to 20 carbon atoms,

Wherein R ₃ , Ar ₄ and Ar ₅ may be independently substituted with -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and -R _a is an aliphatic hydrocarbon group having 1 to 6 carbon atoms And -Ar < _a > is an aryl group having 6 to 20 carbon atoms,

(3)

(Wherein R ₄ and R ₅ are, independently of each other, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₆ and Ar ₇ are each independently an arylene group having 6 to 20 carbon atoms,

Wherein R ₄ , R ₅ , Ar ₆ and Ar ₇ may be independently substituted with -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and -R _a is a group having 1 to 6 carbon atoms an aliphatic hydrocarbon group and the -Ar is _a aryl group having 6 to 20 carbon atoms).

3. The hard mask composition according to 2 above, wherein Ar ₁ , Ar ₆ and Ar ₇ are, independently of each other, a phenylene group, a naphthalenediyl group, an anthracenediyl group, a stilbenediyl group or a pyrenediyl group.

4. The hard mask composition according to 2 above, wherein Ar ₂ , Ar ₃ and Ar ₅ are independently of each other a phenyl group, a naphthyl group, an anthracene group, a stilbenyl group or a pyrenyl group.

5. The hard mask composition according to 2 above, wherein Ar ₄ is benzene, naphthalene, anthracene, stilbenyl or pyrenyl group.

6. The hard mask composition according to 2 above, wherein R ₁ to R ₅ are independently of each other a methyl group, a vinyl group, an allyl group or a phenyl group.

7. The composition for hard mask according to 1 above, wherein the composition contains 10 to 70% by weight of the compound and 30 to 90% by weight of the solvent in the total weight of the composition.

8. The composition for hard mask according to 1 above, further comprising at least one of a crosslinking agent and a catalyst.

The composition for a hard mask of the present invention can form a polymer for a resist underlayer film having excellent heat resistance by improving crosslinking and inhibiting the progress of an excessive crosslinking reaction.

In addition, the composition for a hard mask according to an embodiment of the present invention can form a polymer for a resist underlayer film having excellent etching selectivity by improving a high carbon content (C%) in a compound.

An embodiment of the present invention relates to a composition for a hard mask capable of forming a resist underlayer film (hard mask) having excellent heat resistance by including a compound containing two or more tertiary alcohol groups in a molecule and a solvent.

Hereinafter, specific embodiments of the present invention will be described. However, this is merely an example and the present invention is not limited thereto.

In the present invention, when a compound represented by the formula or an isomer of the resin is present, the compound or the resin represented by the formula means a representative formula including the isomer thereof.

< For hard mask  Composition>

The composition for a hard mask of the present invention comprises a compound (A) containing two or more tertiary alcohol groups in a molecule and a solvent (B).

The compound (A)

By including the compound (A) in the present invention, the hard mask formed from the composition for a hard mask of the present invention can exhibit excellent heat resistance.

Specifically, the compound (A) contains two or more tertiary alcohol groups in the molecule, and this tertiary alcohol group is more likely to react with Sn1 than the secondary or primary alcohol group. Therefore, The crosslinking property can be improved and the heat resistance can be excellent. In addition, the tertiary alcohol inhibits the progress of the excessive crosslinking reaction and is not sensitive to the oxidation reaction, thereby improving the heat resistance of the hard mask produced when used in the production of hard masks.

In addition, by including the compound (A) in the present invention, the etch resistance (etching selectivity) against the halogen gas can be improved due to a cause such as a high carbon content (C%) in the compound.

In this respect, for example, the compound (A) may be at least one selected from the group consisting of compounds represented by the following formulas (1) to (3)

[Chemical Formula 1]

(Wherein n is 1 to 10,

R ₁ and R ₂ are independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₁ is independently an arylene group having 6 to 20 carbon atoms,

Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms,

Wherein _{Ar 1, Ar 2, Ar 3} , R 1 and R ₂ are independently _{-OH, -OR a, -OAr a,} -R a, may further be substituted by -Ar _a, and the -R _a is C 1 to each other An aliphatic hydrocarbon group having 6 to 20 carbon atoms and -Ar _a is an aryl group having 6 to 20 carbon atoms,

(2)

(Wherein n is 2 to 10,

R ₃ is independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₄ is an aryl compound having 6 to 20 carbon atoms in which n hydrogen atoms can be substituted,

Ar ₅ is independently an aryl group having 6 to 20 carbon atoms,

Wherein R ₃ , Ar ₄ and Ar ₅ may be independently substituted with -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and -R _a is an aliphatic hydrocarbon group having 1 to 6 carbon atoms And -Ar &lt; _a &gt; is an aryl group having 6 to 20 carbon atoms,

(3)

(Wherein R ₄ and R ₅ are, independently of each other, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,

Ar ₆ and Ar ₇ are each independently an arylene group having 6 to 20 carbon atoms,

Wherein R ₄ , R ₅ , Ar ₆ and Ar ₇ may be independently substituted with -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and -R _a is a group having 1 to 6 carbon atoms an aliphatic hydrocarbon group and the -Ar is _a aryl group having 6 to 20 carbon atoms).

In the formula, the term &quot; independent of each other &quot; means that even a substituent represented by the same symbol in one compound may be a different substituent when the position is different. For example, in formula (1), R ₂ or Ar ₁ may be different substituents within the ranges described above provided that they are in different repeating units in one compound.

As described above, since Ar ₁ to Ar ₇ have aromatic properties, it is possible to further improve the crosslinkability and to improve the high carbon content (C%) in the compound to form a polymer for a resist underlayer film having excellent etching selectivity .

In the present invention, the aliphatic hydrocarbon group having 1 to 6 carbon atoms is preferably an alkyl group having 1 to 6 carbon atoms, a vinyl group, or an allyl group.

In the present invention, preferably, Ar ₁ to Ar ₇ and R ₁ to R ₅ may be as follows.

For example, Ar ₁ , Ar _6, and Ar ₇ may independently be a phenylene group, a naphthalene diyl group, an anthracenediyl group, a stilbenediyl group, or a pyrenediyl group,

Ar ₂ , Ar ₃ and Ar ₅ may be, independently of one another, a phenyl group, a naphthyl group, an anthracene group, a stilbenyl group or a pyrenyl group,

Ar ₄ may be benzene, naphthalene, anthracene, stilbenyl, or pyrenyl group.

In the present invention, preferably, R ₁ to R ₅ independently of one another may be a methyl group, a vinyl group, an allyl group or a phenyl group, more preferably a vinyl group, an allyl group or a phenyl group.

When R ₁ to R ₅ according to an embodiment of the present invention are independently of each other a vinyl group or an allyl group, the compound (A) has a crosslinkable functional group, which can further improve the heat resistance.

In addition, when R ₁ to R ₅ according to an embodiment of the present invention include a phenyl group, a polymer for a resist underlayer film having improved etching selectivity is formed by significantly improving the carbon content (C%) in the compound .

More preferably, in the hard mask composition according to an embodiment of the present invention, the compound (A) may be at least one selected from the group consisting of the following formulas (11) to (31)

(11)

[Chemical Formula 12]

[Chemical Formula 13]

[Chemical Formula 14]

[Chemical Formula 15]

[Chemical Formula 16]

[Chemical Formula 17]

[Chemical Formula 18]

[Chemical Formula 19]

[Chemical Formula 20]

[Chemical Formula 21]

[Chemical Formula 22]

(23)

&Lt; EMI ID =

(25)

(26)

(27)

(28)

[Chemical Formula 29]

(30)

.

.

For example, the compound (A) according to one embodiment of the present invention can be prepared through a Grignard reaction in which a ketone is reacted with a Grignard reagent. Therefore, the compound (A) according to this embodiment can be constantly produced under mild conditions.

The content of the compound (A) according to an embodiment of the present invention is not particularly limited as long as the object of the present invention can be achieved. For example, the content of the compound (A) may be 10 to 70% The effect of the present invention described above can be most excellently displayed when satisfied.

Solvent (B)

The solvent according to an embodiment of the present invention is not particularly limited as long as it is an organic solvent having sufficient solubility for the compound (A), for example, propylene glycol monomethyl ether acetate (PGMEA) Propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma -butyrolactone (GBL), and acetyl acetone, and preferably propylene glycol And may be propylene glycol monomethyl ether acetate (PGMEA).

The content of the solvent (B) according to an embodiment of the present invention is not particularly limited as long as the object of the present invention can be achieved. The amount of the solvent (B) excluding the reaction components and other additives including the compound . For example, when only the compound (A) is used in the composition, the solvent may be from 30 to 90% by weight of the total weight of the composition, and the effects of the present invention described above may be effective when the above range is satisfied.

Cross-linking agent  And catalyst

In addition, if necessary, the composition for a hard mask according to an embodiment of the present invention may further include at least one of a crosslinking agent and a catalyst.

The crosslinking agent is capable of crosslinking the repeating units of the polymer by heating in a reaction catalyzed by the generated acid and can be reacted with the hydroxyl group of the compound (A) in such a manner as to be catalyzed by the resulting acid The crosslinking agent is not particularly limited. Representative examples of such a crosslinking agent include any one selected from the group consisting of melamine, amino resin, glycoluril compound and bisepoxy compound.

By further including the crosslinking agent, the curing property of the composition for a hard mask can be further enhanced.

Specific examples of the cross-linking agent include etherified amino resins such as methylated or butylated melamine (specific examples include N-methoxymethyl-melamine or N-butoxymethyl-melamine) and methylated or butylated Urea resin (specific examples thereof include Cymel U-65 Resin or UFR 80 Resin), glycoluril derivatives represented by the following chemical formula (41) (specific examples include Powderlink 1174), bis (hydroxymethyl) p-cresol compound), and the like. Further, a bis-epoxy compound represented by the following general formula (43) and a melamine-based compound represented by the following general formula (44) can also be used as a crosslinking agent.

(41)

(42)

(43)

(44)

As the catalyst, an acid catalyst or a basic catalyst may be used.

The acid catalyst may be a thermally activated acid catalyst. Examples of the acid catalyst include an organic acid such as p-toluene sulfonic acid monohydrate, and a TAG (thermal acid generator) based compound which ensures storage stability. Thermal acid generators are acid generator compounds which are intended to release acid upon thermal treatment, for example pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexa Dienone, benzoin tosylate, 2-nitrobenzyl tosylate, and alkyl esters of organic sulfonic acids.

As the basic catalyst, any one selected from among NH ₄ OH or ammonium hydroxide represented by NR ₄ OH (R is an alkyl group) can be used.

Other photosensitive catalysts known in the art of resist technology can also be used as long as they are compatible with the other components of the antireflective composition.

When the cross-linking agent is included, the content of the cross-linking agent may be 1 part by weight to 30 parts by weight, preferably 5 parts by weight to 20 parts by weight, more preferably 5 parts by weight, based on 100 parts by weight of the compound (A) To 10 parts by weight. When the catalyst is included, the content of the catalyst may be 0.001 to 5 parts by weight, preferably 0.1 to 2 parts by weight, more preferably 0.1 to 5 parts by weight, relative to 100 parts by weight of the compound (A) Parts by weight to 1 part by weight.

When the crosslinking agent is included in the above range, appropriate crosslinking properties can be obtained without changing the optical properties of the lower layer film to be formed.

In addition, when the catalyst content falls within the above range, appropriate crosslinking properties can be obtained and the acidity affecting the storage stability can be appropriately maintained.

additive

If necessary, the composition for a hard mask of the present invention may further comprise additives such as a surfactant. Examples of the surfactant include, but are not limited to, alkylbenzenesulfonates, alkylpyridinium salts, polyethylene glycols, and quaternary ammonium salts. In this case, the content of the surfactant may be 0.1 part by weight to 10 parts by weight based on 100 parts by weight of the compound (A). When the content of the surfactant is within the above range, appropriate crosslinking properties can be obtained without changing the optical properties of the lower layer film to be formed.

It is to be understood that both the foregoing general description and the following detailed description of the present invention are exemplary and explanatory and are intended to be illustrative of the invention and are not intended to limit the scope of the claims. It will be apparent to those skilled in the art that such variations and modifications are within the scope of the appended claims.

Example  And Comparative Example

A composition for a hard mask of the composition and the content (% by weight) shown in the following Tables 1 and 2 was prepared.

division The compound (A) Solvent (B) The crosslinking agent (C) The catalyst (D) Additive (E) ingredient content ingredient content ingredient content ingredient content ingredient content Example 1 A-1 20 B-1 80 - - - - - - Example 2 A-1 15 B-1 85 - - - - - - Example 3 A-1 40 B-1 60 - - - - - - Example 4 A-2 20 B-1 80 - - - - - - Example 5 A-3 20 B-1 80 - - - - - - Example 6 A-4 20 B-1 80 - - - - - - Example 7 A-5 20 B-1 80 - - - - - - Example 8 A-1 60 B-1 40 - - - - - - Example 9 A-1 5 B-1 95 - - - - - - Example 10 A-1 75 B-1 25 - - - - - - Example 11 A-3 5 B-1 95 - - - - - - Example 12 A-3 75 B-1 25 - - - - - - Example 13 A-1 20 B-1 78 C-1 One D-1 One - - Example 14 A-1 20 B-1 79 - - - - E-1 One

division The polymer (A ') Solvent (B) The crosslinking agent (C) The catalyst (D) Additive (E) ingredient content ingredient content ingredient content ingredient content ingredient content Comparative Example 1 A'-1 20 B-1 80 - - - - - - Comparative Example 2 A'-2 20 B-1 80 - - - - - - Comparative Example 3 A'-3 20 B-1 80 - - - - - - Comparative Example 4 A'-1 20 B-1 78 C-1 One D-1 One - - Comparative Example 5 A'-1 20 B-1 79 - - - - E-1 One

A-1:

A-2:

A-3:

A-4:

A-5:

A'-1:

A'-2:

A'-3:

B-1: Propylene glycol monomethyl ether acetate (PGMEA)

C-1: N-methoxymethyl-melamine

D-1: p-toluenesulfonic acid-pyridine salt

E-1: Triethylene glycol

Experimental Example

1. Evaluation of heat resistance

The composition was vacuum dried to remove the solvent, and a portion of the sample was taken and the mass loss rate was measured while heating to 800 DEG C using TGA (thermogravimetric analysis) under nitrogen.

Mass loss rate = {(initial mass - mass at 800 DEG C) / initial mass} x 100%

&Lt; Determination of heat resistance &

◎: mass loss rate less than 10%

?: Mass loss rate of 10% or more to less than 15%

DELTA: Mass loss rate: 15% or more to less than 25%

×: mass loss rate of 25% or more

2. Etch selectivity

Each of the sample solutions prepared in Examples 1 to 14 and Comparative Examples 1 to 5 was coated on a silicon wafer by a spin-coating method and baked at 200 DEG C for 60 seconds to form a film having a thickness of 1500 ANGSTROM. Each of the formed films was coated with ArF photoresist, baked at 110 ° C for 60 seconds, exposed using ASML (XT: 1450G, NA 0.93) exposure equipment and developed with TMAH (2.38 wt% aqueous solution) I got a line and space pattern.

The cured 60 seconds and the patterned sample obtained at 110 ℃, and to the specimen using a CHF ₃ / CF ₄ gas mixture proceeds dry etching 20 seconds each, each investigated section by FE-SEM to measure the etch rate, and The etch resistance, i.e., etch selectivity, for the halogen plasma was determined.

&Lt; Determination of etching resistance against halogen gas >

◎: Etching rate less than 10 A / sec

○: Etching rate 10 A / sec or more and less than 11 A / sec

DELTA: etching rate of 11 A / sec or more and less than 12 A / sec

×: etching rate of 12 A / sec or more

division Heat resistance
(Mass loss rate at 800 ° C) Etch selectivity
(Etching resistance against halogen gas) Example 1 ◎ △ Example 2 ◎ △ Example 3 ◎ △ Example 4 ◎ △ Example 5 △ ◎ Example 6 △ ◎ Example 7 ○ ○ Example 8 ◎ △ Example 9 ○ △ Example 10 ○ △ Example 11 △ ○ Example 12 △ ○ Example 13 ◎ △ Example 14 ◎ △ Comparative Example 1 × △ Comparative Example 2 × △ Comparative Example 3 × △ Comparative Example 4 × △ Comparative Example 5 × △

Referring to Table 3, although the examples show excellent heat resistance and etching selectivity, it is confirmed that the comparative examples are not excellent in heat resistance and etching selectivity.

Claims (8)

A hard mask composition comprising a compound containing two or more tertiary alcohol groups in a molecule and a solvent.
The hard mask composition according to claim 1, wherein the compound is at least one selected from the group consisting of compounds represented by the following Chemical Formulas 1 to 3:
[Chemical Formula 1]

(Wherein n is 1 to 10,
R ₁ and R ₂ are independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,
Ar ₁ is independently an arylene group having 6 to 20 carbon atoms,
Ar ₂ and Ar ₃ are each independently an aryl group having 6 to 20 carbon atoms,
Wherein _{Ar 1, Ar 2, Ar 3} , R 1 and R ₂ are independently _{-OH, -OR a, -OAr a,} -R a, may further be substituted by -Ar _a, and the -R _a is C 1 to each other An aliphatic hydrocarbon group having 6 to 20 carbon atoms and -Ar _a is an aryl group having 6 to 20 carbon atoms,
(2)

(Wherein n is 2 to 10,
R ₃ is independently an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,
Ar ₄ is an aryl compound having 6 to 20 carbon atoms in which n hydrogen atoms can be substituted,
Ar ₅ is independently an aryl group having 6 to 20 carbon atoms,
Wherein R ₃ , Ar ₄ and Ar ₅ may be independently substituted with -OH, -OR _a , -OAr _a , -R _a , -Ar _a , and -R _a is an aliphatic hydrocarbon group having 1 to 6 carbon atoms And -Ar &lt; _a &gt; is an aryl group having 6 to 20 carbon atoms,
(3)

(Wherein R ₄ and R ₅ are, independently of each other, an aliphatic hydrocarbon group having 1 to 6 carbon atoms or an aryl group having 6 to 20 carbon atoms,
Ar ₆ and Ar ₇ are each independently an arylene group having 6 to 20 carbon atoms,
Wherein R _4, R _5, Ar ₆ and Ar ₇ are independently be further substituted by _{-OH, -OR a, -OAr a,} -R a, -Ar a from one another, and wherein -R is _a group having 1 to 6 carbon atoms an aliphatic hydrocarbon group and the -Ar is _a aryl group having 6 to 20 carbon atoms).
The hard mask composition according to claim 2, wherein Ar ₁ , Ar _6, and Ar ₇ are independently of each other a phenylene group, a naphthalenediyl group, an anthracenediyl group, a stilbenediyl group, or a pyrenediyl group.
The hard mask composition according to claim 2, wherein Ar ₂ , Ar ₃ and Ar ₅ are independently of each other a phenyl group, a naphthyl group, an anthracene group, a stilbenyl group or a pyrenyl group.
3. The hardmask composition of claim 2, wherein Ar &lt; ₄ &gt; is benzene, naphthalene, anthracene, stilbenyl, or pyrenyl group.
The hard mask composition according to claim 2, wherein R ₁ to R ₅ are independently of each other a methyl group, a vinyl group, an allyl group or a phenyl group.
The hard mask composition according to claim 1, comprising 10 to 70% by weight of the compound in the total weight of the composition, and 30 to 90% by weight of the solvent.
The composition of claim 1, further comprising at least one of a crosslinking agent and a catalyst.