KR102276553B1 - Composition for hard mask - Google Patents

Abstract

The present invention relates to a composition for a hard mask, and more particularly, by including a compound and a solvent including a repeating unit represented by a specific chemical formula, excellent etching resistance to halogen gas and oxygen without deterioration of optical and mechanical properties It is possible to form a polymer for a resist underlayer that exhibits excellent etching properties to gas and simultaneously satisfies the gap-fill characteristics required in the Back-End-Of-The-Line (BEOL) field.

Description

Composition for hard mask {COMPOSITION FOR HARD MASK}

The present invention relates to a composition for a hard mask.

In the microelectronics industry and industries such as microscopic structures (eg, micromachines, magnetoresist heads, etc.), there is a continuing need to reduce the size of structural features. Also, in the microelectronics industry, there is a desire to reduce the size of microelectronic devices, thereby providing a greater amount of circuitry for a given chip size.

Effective lithographic techniques are essential to reduce feature size.

A typical lithographic process first applies a resist to the underlying material and then exposes it to radiation to form a layer of resist. The resist layer is then developed with a developer to form a patterned resist layer, and the material in the openings of the patterned resist layer is etched to transfer the pattern to the underlying material. After the transfer is complete, it involves the formation of a patterned resist layer by patternwise exposing the photosensitive resist. The image is then developed by contacting the exposed resist layer with an optional substance (typically an aqueous alkaline developer). The pattern is then transferred to the underlying material by etching that material within the openings of the patterned resist layer. After the transfer is complete, the remaining resist layer is removed.

In most of the lithographic processes, in order to minimize the reflectivity between the resist layer and the underlying material, an anti-reflective coating (ARC) is used to increase the resolution. However, in the process of etching the anti-reflective coating after patterning, the resist layer is also consumed a lot, which may require additional patterning during the subsequent etching step.

In other words, for some lithographic imaging processes, the resist used may not be sufficiently resistant to the etching step to be able to effectively transfer the desired pattern to the underlying material. Therefore, when an ultra-thin resist layer using an extremely thin resist material is required, when the substrate to be etched is thick, when a deep etching depth is required, or when it is necessary to use a specific etchant for a given underlying material etc., a resist underlayer film has been used.

The resist underlayer acts as an intermediate layer between the resist layer and an underlayer material that can be patterned by transfer from the patterned resist, the resist underlayer receiving the pattern from the patterned resist layer and transferring the pattern to the underlayer material. It must be able to withstand the etching process required to

Although many materials have been tried to form such an underlayer film, there is still a demand for an improved underlayer film composition.

Conventional materials for forming an underlayer film are difficult to apply to a substrate, so for example, chemical or physical vapor deposition, special solvents, or high-temperature firing are used, but these are expensive. Accordingly, recently, research on an underlayer film composition that can be applied by a spin-on coating technique without the need for high-temperature sintering has been conducted.

In addition, it can be selectively and easily etched by using the resist layer formed thereon as a mask, and at the same time, especially when the lower layer is a metal layer, it is resistant to the etching process required for patterning the lower layer using the underlayer film as a mask. Research is ongoing.

Korean Patent Application Laid-Open No. 10-2010-0082844 discloses a technology related to a composition for forming a resist underlayer film.

Korean Patent Publication No. 10-2010-0082844

The present invention exhibits excellent etching resistance to halogen gas and excellent etching resistance to oxygen gas without deterioration of optical and mechanical properties, and also provides gap-fill required in the Back-End-Of-The-Line (BEOL) field. An object of the present invention is to provide a composition for a hard mask capable of forming a polymer for a resist underlayer film that simultaneously satisfies the properties.

1. A composition for a hard mask comprising a compound and a solvent comprising a repeating unit represented by the following formula (1):

[Formula 1]

(Wherein, Ar is a C6 to C18 arenetriyl group (Arenetriyl),

R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

n is an integer from 1 to 190).

2. The composition for a hard mask according to the above 1, wherein Ar in Formula 1 is at least one selected from the group consisting of Formula 2 and Formula 3 below:

[Formula 2]

[Formula 3]

.

.

3. The composition for a hard mask according to the above 1, wherein the compound of Formula 1 is prepared by a condensation reaction of an arene compound having 6 to 18 carbon atoms containing a hydroxyl group and an aromatic bicinaldiol compound of Formula 4 below:

[Formula 4]

(Wherein, R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

R ₃ and R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,

R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms).

4. The composition for a hard mask according to 1 above, comprising 5 to 15% by weight of the compound including the compound including the repeating unit represented by Formula 1, and 85 to 95% by weight of the solvent, based on the total weight of the composition.

5. The composition for a hard mask according to 1 above, further comprising at least one of a crosslinking agent and a catalyst.

The composition for a hard mask of the present invention forms a polymer for a resist underlayer having excellent optical properties, mechanical properties, etching selectivity properties, and gap-fill properties.

The composition for a hard mask of the present invention exhibits excellent etching resistance to halogen gas and excellent etching resistance to oxygen gas without deterioration in optical and mechanical properties, and also in the Back-End-Of-The-Line (BEOL) field. Forms a polymer for a resist underlayer film that simultaneously satisfies the gap-fill properties required in

The composition for a hard mask according to an embodiment of the present invention may obtain appropriate crosslinking properties without changing the optical properties of the formed underlayer.

The composition for a hard mask according to an embodiment of the present invention can properly maintain acidity that affects storage stability.

One embodiment of the present invention includes a compound and a solvent including a repeating unit represented by the following formula (1), thereby exhibiting excellent etching resistance to halogen gas and excellent etching resistance to oxygen gas without deterioration of optical and mechanical properties. It also relates to a composition for a hard mask that can form a polymer for a resist underlayer that simultaneously satisfies the gap-fill properties required in the Back-End-Of-The-Line (BEOL) field.

In the present invention, when there is an isomer of the compound or resin represented by the formula, the compound or resin represented by the formula means the representative formula including the isomer.

<Composition for hard mask>

The composition for a hard mask of the present invention includes a compound (A) including a repeating unit represented by the following formula (1) and a solvent (B).

Compound (A) comprising a repeating unit represented by Formula 1

[Formula 1]

(Wherein, Ar is a C6 to C18 arenetriyl group (Arenetriyl),

R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

n is an integer from 1 to 190).

In general, etching resistance, which is the ability to endure without decomposition during etching, and coatability, which is the degree to which the polymer layer is well coated when the polymer layer is formed after the composition is applied, tends to be inversely proportional to each other.

In the present invention, by including the compound including the repeating unit represented by Chemical Formula 1, the polymer layer formed of the composition for a hard mask of the present invention can exhibit excellent etching resistance and coating properties at the same time. Specifically, the polymer for a resist underlayer formed from the composition for a hard mask of the present invention exhibits excellent etching resistance to halogen gas and excellent etching resistance to oxygen gas without deterioration of optical and mechanical properties, and also back-end- It simultaneously satisfies the gap-fill characteristics required in the Of-The-Line (BEOL) field.

In this aspect, preferably, in Formula 1 according to an embodiment of the present invention, Ar may be at least one selected from the group consisting of Formula 2 and Formula 3 below:

[Formula 2]

[Formula 3]

.

.

The compound including the repeating unit represented by Formula 1 according to an embodiment of the present invention may be prepared by a condensation reaction of an arene compound having 6 to 18 carbon atoms containing a hydroxyl group and an aromatic bicinaldiol compound represented by Formula 4 below. have:

[Formula 4]

(Wherein, R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,

R ₃ and R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,

R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms).

The arene compound having 6 to 18 carbon atoms containing a hydroxyl group may be, for example, of the following formula (11) or (12):

[Formula 11]

[Formula 12]

The aromatic bicinaldiol compound represented by Formula 4 may be, for example, represented by Formulas 13 to 17 below:

[Formula 13]

[Formula 14]

[Formula 15]

[Formula 16]

[Formula 17]

Compound (A) including the repeating unit represented by Formula 1 according to an embodiment of the present invention may have a weight average molecular weight according to the n value. As a specific example, the weight average molecular weight of compound (A) may be 500 to 5000, preferably 1000 to 3000.

The polydispersity index (PDI, Polydispersity index) [weight average molecular weight (Mw) / number average molecular weight (Mn)] of the compound (A) including the repeating unit represented by Formula 1 is preferably 1.5 to 6.0, and 1.8 to It is more preferable that it is 4.0. If the polydispersity index [weight average molecular weight (Mw) / number average molecular weight (Mn)] is included within the above range, the effect due to the compound (A) including the repeating unit represented by the above formula (1) becomes more excellent. It is preferable because

The content of the compound (A) including the repeating unit represented by Formula 1 according to an embodiment of the present invention is not particularly limited as long as the object of the present invention can be achieved, for example, 5 to 15 weight of the total weight of the composition %, and when the above range is satisfied, the effect of the present invention described above may be most excellent. If the content of the compound (A) represented by Formula 1 is less than 5% by weight of the total weight of the composition, the effect of the present invention may appear insignificant, and if it exceeds 15% by weight, the coating uniformity of the liquid may be reduced.

Solvent (B)

The solvent according to an embodiment of the present invention is not particularly limited as long as it is an organic solvent having sufficient solubility in the compound including the repeating unit represented by Formula 1, for example, propylene glycol monomethyl ether acetate (propylene glycol monomethyl ether acetate; PGMEA), propylene glycol monomethyl ether (PGME), cyclohexanone, ethyl lactate, gamma-butyrolactone (GBL), acetyl acetone, etc. and preferably propylene glycol monomethyl ether acetate (PGMEA).

The content of the solvent (B) according to an embodiment of the present invention is not particularly limited as long as the object of the present invention can be achieved, and the remaining amount excluding the reaction component and other additives including the compound of Formula 1 in the composition according to the present invention. may be included. For example, when only the compound of Formula 1 is used in the composition, the solvent may be 85 to 95% by weight of the total weight of the composition, and when the above range is satisfied, the above-described effects of the present invention may be effectively exhibited.

Crosslinking Agents and Catalysts

In addition, if necessary, the composition for a hard mask according to an embodiment of the present invention may further include at least one of a crosslinking agent and a catalyst.

The crosslinking agent is capable of crosslinking the repeating units of the polymer by heating in a reaction catalyzed by the generated acid, and can be reacted with the hydroxyl group of the compound (A) in a way that can be catalyzed by the generated acid It will not specifically limit if it is a crosslinking agent. As a representative example of such a crosslinking agent, any one selected from the group consisting of melamine, an amino resin, a glycoluryl compound and a bisepoxy compound may be used.

By further including the crosslinking agent, the curing characteristics of the composition for a hard mask may be further strengthened.

Specific examples of the crosslinking agent include etherified amino resins such as methylated or butylated melamine (specific examples include N-methoxymethyl-melamine or N-butoxymethyl-melamine) and methylated or butylated melamine Urea (urea) resin (specific example, Cymel U-65 Resin or UFR 80 Resin), glycoluril derivative represented by the following formula 31 (specific example, Powderlink 1174), bis (hydroxymethyl) represented by formula 32 -p-cresol compound) and the like. In addition, a bisepoxy-based compound represented by the following Chemical Formula 33 and a melamine-based compound represented by the following Chemical Formula 34 may also be used as a crosslinking agent.

[Formula 31]

[Formula 32]

[Formula 33]

[Formula 34]

An acid catalyst or a basic catalyst may be used as the catalyst.

The acid catalyst may be a thermally activated acid catalyst. As an example of the acid catalyst, an organic acid such as p-toluene sulfonic acid monohydrate may be used, and a compound of a thermal acid generator (TAG) system that promotes storage stability may be mentioned. The thermal acid generator is an acid generator compound adapted to release an acid upon heat treatment, for example, pyridinium p-toluene sulfonate, 2,4,4,6-tetrabromocyclohexa Dienone, benzointosylate, 2-nitrobenzyltosylate, an alkyl ester of organic sulfonic acid, etc. can be used.

As the basic catalyst, _{any one selected from ammonium hydroxide represented by NH 4} OH or NR ₄ OH (R is an alkyl group) may be used.

In addition, other photosensitive catalysts known in the resist art can be used as long as they are compatible with the other components of the antireflective composition.

When the crosslinking agent is included, the content of the crosslinking agent may be 0.001 parts by weight to 50 parts by weight, preferably 0.1 parts by weight to 20 parts by weight, and more preferably 1 part by weight based on 100 parts by weight of the compound (A). to 20 parts by weight. In addition, when the catalyst is included, the content of the catalyst may be 0.001 parts by weight to 50 parts by weight, preferably 0.1 parts by weight to 20 parts by weight, and more preferably 1 part by weight based on 100 parts by weight of the compound (A). It may be from 20 parts by weight to 20 parts by weight.

When the crosslinking agent is included in the above range, appropriate crosslinking properties can be obtained without changing the optical properties of the formed underlayer film.

In addition, when the catalyst content is included in the above range, it is possible to obtain appropriate crosslinking properties, and also to appropriately maintain acidity affecting storage stability.

additive

If necessary, the composition for a hard mask of the present invention may further include an additive such as a surfactant. Examples of the surfactant include, but are not limited to, alkylbenzenesulfonate, alkylpyridinium salt, polyethylene glycol, tetraammonium salt, and the like. In this case, the content of the surfactant may be 1 part by weight to 30 parts by weight based on 100 parts by weight of the compound (A). When the content of the surfactant is included in the above range, appropriate crosslinking properties may be obtained without changing the optical properties of the formed underlayer.

Hereinafter, preferred embodiments are presented to help the understanding of the present invention, but these examples are merely illustrative of the present invention and do not limit the appended claims, and are within the scope and spirit of the present invention. It is obvious to those skilled in the art that various changes and modifications are possible, and it is natural that such variations and modifications fall within the scope of the appended claims.

manufacturing example

Preparation Example 1. Synthesis of compound (A-1) containing a repeating unit represented by Formula 1

A 1L three-necked flask equipped with a thermometer, a condenser, a stirrer, and a dropping funnel was installed in an oil container, and 1 mol of a phenol derivative (compound represented by Formula 11) was added to the reactor and dissolved in 500 g of propylene glycol monomethyl ether acetate (PGMEA). . Thereafter, 0.03 mol (5.16 g) of PTSA (paratoluenesulfonic acid) was added.

The dropping funnel was filled with a solution of 1 mol of a bicinaldiol derivative (compound represented by Formula 13) in PGMEA (200 g), and was added dropwise for 2 hours while maintaining the temperature inside the reactor at 120°C. After completion of the dropwise addition, after stirring at the same temperature for 12 hours, 0.03 mol (4.48 g) of triethanolamine was added to the reactor as a neutralizing agent, stirred at room temperature for an additional 1 hour, cooled to room temperature, and the obtained reaction mixture was mass ratio A 9:1 methanol:ethylene glycol mixture was added dropwise to a 5L round-bottom flask containing 3 kg while stirring. The resulting solid product was left at the bottom of the flask, and the supernatant was removed by decanting, followed by distillation under reduced pressure at 80° C. for 1 hour to remove the residual solvent.

The molecular weight and polydispersity index of the obtained copolymer were measured by GPC under tetrahydrofuran, and the weight average molecular weight and polydispersity index (PDI) were measured and summarized below.

Preparation Example 2. Synthesis of compound (A-2) containing a repeating unit represented by Formula 1

A-2 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 12 was used as the phenol derivative.

Preparation Example 3. Synthesis of compound (A-3) containing a repeating unit represented by Formula 1

A-3 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 11 and the compound represented by Formula 14 were used as the phenol derivative and the bicinaldiol derivative, respectively.

Preparation Example 4. Synthesis of compound (A-4) containing a repeating unit represented by Formula 1

A-4 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 11 and the compound represented by Formula 15 were used as the phenol derivative and the bicinaldiol derivative, respectively.

Preparation Example 5. Synthesis of compound (A-5) containing a repeating unit represented by Formula 1

A-5 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 12 and the compound represented by Formula 16 were used as the phenol derivative and the bicinaldiol derivative, respectively.

Preparation Example 6. Synthesis of compound (A-6) containing a repeating unit represented by Formula 1

A-6 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 12 and the compound represented by Formula 17 were used as the phenol derivative and the bicinaldiol derivative, respectively.

Preparation Example 7. Synthesis of compound (A-7) containing a repeating unit represented by Formula 1

A-7 was synthesized in the same manner as in Preparation Example 1, except that the compound represented by Formula 12 and the compound represented by Formula 15 were used as the phenol derivative and the bicinaldiol derivative, respectively.

Preparation 8. Synthesis of compound (A'-1)

A'-1 was synthesized in the same manner as in Preparation Example 2, except that formaldehyde was used as the aldehyde derivative.

Preparation 9. Synthesis of compound (A'-2)

A'-2 was synthesized in the same manner as in Preparation Example 2, except that benzaldehyde was used as the aldehyde derivative.

Examples and Comparative Examples

A composition for a hard mask of the composition and content (% by weight) described in Table 1 was prepared.

division Compound (A) Solvent (B) Crosslinking agent (C) Catalyst (D) Additive (E) ingredient content ingredient content ingredient content ingredient content ingredient content Example 1 A-1 10 B-1 90 - - - - - - Example 2 A-2 10 B-1 90 - - - - - - Example 3 A-3 10 B-1 90 - - - - - - Example 4 A-4 10 B-1 90 - - - - - - Example 5 A-5 10 B-1 90 - - - - - - Example 6 A-6 10 B-1 90 - - - - - - Example 7 A-7 10 B-1 90 - - - - - - Example 8 A-1 18 B-1 82 Example 9 A-1 10 B-1 88 C-1 One D-1 One - - Example 10 A-1 10 B-1 89 - - - - E-1 One

division Compound (A') Solvent (B) crosslinking agent catalyst additive ingredient weight ingredient weight ingredient weight ingredient weight ingredient weight Comparative Example 1 A'-1 10 B-1 90 - - - - - - Comparative Example 2 A'-2 10 B-1 90 - - - - - -

를 축합 중합하여 생성된 화합물(중량평균분자량:1750, PDI:2.3)A-1:

A compound produced by condensation polymerization of (weight average molecular weight: 1750, PDI: 2.3)

를 축합 중합하여 생성된 화합물(중량평균분자량:1530, PDI:2.0)A-2:

A compound produced by condensation polymerization of (weight average molecular weight: 1530, PDI: 2.0)

를 축합 중합하여 생성된 화합물(중량평균분자량:1600, PDI:2.5)A-3:

A compound produced by condensation polymerization of (weight average molecular weight: 1600, PDI: 2.5)

를 축합 중합하여 생성된 화합물(중량평균분자량:2100, PDI:2.3)A-4:

A compound produced by condensation polymerization of (weight average molecular weight: 2100, PDI: 2.3)

를 축합 중합하여 생성된 화합물(중량평균분자량:1670, PDI:2.0)A-5:

A compound produced by condensation polymerization of (weight average molecular weight: 1670, PDI: 2.0)

를 축합 중합하여 생성된 화합물(중량평균분자량:2400, PDI:2.8)A-6:

A compound produced by condensation polymerization of (weight average molecular weight: 2400, PDI: 2.8)

를 축합 중합하여 생성된 화합물(중량평균분자량:1720, PDI:2.7)A-7:

A compound produced by condensation polymerization of (weight average molecular weight: 1720, PDI: 2.7)

를 축합 중합하여 생성된 화합물A'-1:

a compound produced by condensation polymerization of

(Weight average molecular weight: 2500, PDI: 1.5)

를 축합 중합하여 생성된 화합물A'-2:

a compound produced by condensation polymerization of

(Weight average molecular weight: 1900, PDI: 2.0)

B-1: propylene glycol monomethyl ether acetate (PGMEA)

C-1 : (N-Methoxymethyl-melamine)

D-1: p-toluene sulfonic acid-pyridine salt

E-1: triethylene glycol

Experimental example

1. Etch resistance evaluation

The sample solutions prepared in Examples 1 to 10 and Comparative Examples 1 to 2 were respectively coated on a silicon wafer by spin-coating, and baked at 200° C. for 60 seconds to form a film having a thickness of 1500 Å. On each formed film, a photoresist for ArF is coated, baked at 110°C for 60 seconds, exposed using ASML (XT:1450G, NA 0.93) exposure equipment, and then each developed with TMAH (2.38wt% aqueous solution) to achieve a thickness of 60nm. A line and space pattern was obtained.

The obtained patterned specimen was _{dry-etched for 20 seconds using a CHF 3} /CF ₄ mixed gas, respectively, and the cross-section was examined by FE-SEM to measure the etching rate and determine the etching resistance to halogen plasma.

In addition, the same substrate was dry-etched for 10 seconds each using oxygen gas, and each cross section was examined by FE-SEM to measure the etching rate and to determine the etching property to halogen plasma.

<Determination of etching resistance to halogen gas>

○: Etching rate less than 11A/Sec

△: Etching rate 11 to 12 A/Sec

×: Exceeding etching rate 12A/Sec

<Determination of etching property to oxygen gas>

○: Etching rate over 20A/Sec

Δ: etching rate 15 to 20 A/Sec

×: Etching rate less than 15A/Sec

2. Gap-fill characteristics evaluation

<Evaluation method>

On a silicon substrate on which a pattern having a depth of 600 nm and a width of 100 nm is formed, the sample solutions prepared in Examples 1 to 10 and Comparative Examples 1 and 2 are coated on a silicon wafer by spin-coating, respectively, and baked at 200° C. of film was formed, and the gap-fill properties were evaluated by measuring the cross-sectional SEM.

<Gap-fill characteristic judgment>

○: Unfilled space is not confirmed in the cross-sectional photo, and unevenness of the coating surface is not visually confirmed

△: Unfilled space was not confirmed in the cross-sectional photograph, but the unevenness of the coating surface was visually confirmed.

×: An unfilled space was confirmed in the cross-sectional photograph.

division Etching resistance to halogen gas Etching to oxygen gas Gap-fill characteristics Example 1 △ ○ ○ Example 2 ○ ○ ○ Example 3 △ ○ ○ Example 4 ○ ○ ○ Example 5 ○ ○ ○ Example 6 △ ○ ○ Example 7 ○ ○ ○ Example 8 △ ○ ○ Example 9 ○ △ ○ Example 10 △ ○ ○ Comparative Example 1 △ ○ △ Comparative Example 2 △ ○ ×

Referring to Table 3, the Examples showed excellent etching resistance to halogen gas, etching property to oxygen gas, and gap-fill characteristics, but it was confirmed that Comparative Examples were not excellent in all of these characteristics. However, in Example 8, the liquid coating uniformity was lowered due to the increase in viscosity.

Claims (5)

A composition for a hard mask comprising a compound and a solvent comprising a repeating unit represented by the following formula (1):
[Formula 1]

(Wherein, Ar is a C6 to C18 arenetriyl group (Arenetriyl),
R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,
R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,
n is an integer from 1 to 190). The composition for a hard mask according to claim 1, wherein Ar in Formula 1 is at least one selected from the group consisting of Formula 2 and Formula 3 below:
[Formula 2]

[Formula 3]

. The composition for a hard mask according to claim 1, wherein the compound of Formula 1 is prepared by a condensation reaction of an arene compound having 6 to 18 carbon atoms containing a hydroxyl group and an aromatic bicinaldiol compound of Formula 4 below:
[Formula 4]

(Wherein, R ₁ and R ₂ are each independently a hydrogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms,
R ₃ and R ₄ are each independently a hydrogen atom or an alkyl group having 1 to 6 carbon atoms,
R ₅ and R ₆ are each independently a hydrogen atom, a halogen atom, an alkyl group having 1 to 6 carbon atoms, or an aryl group having 6 to 18 carbon atoms). The composition for a hard mask according to claim 1, comprising 5 to 15% by weight of the compound including the compound including the repeating unit represented by Formula 1, 85 to 95% by weight of the solvent, based on the total weight of the composition. The composition for a hard mask according to claim 1, further comprising at least one of a crosslinking agent and a catalyst.