TWI705661B - Manufacturing method of piezoelectric vibration element - Google Patents
Manufacturing method of piezoelectric vibration element Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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Abstract
本發明涉及壓電振子的製造方法,其包括:準備具有第一主面和與第一主面對向的第二主面的呈壓電性的基板的步驟、在基板的第一主面側形成第一光阻抗蝕劑層並在第二主面側形成第二光阻抗蝕劑層的步驟、使用第一光罩將第一光阻抗蝕劑層曝光並在第一光阻抗蝕劑層轉印第一圖案以及第一對準標記的第一曝光步驟、拍攝第二光罩的第二對準標記並記錄第二對準標記的拍攝影像的步驟、基於第一光阻抗蝕劑層的第一對準標記與第二對準標記的拍攝影像調整基板相對於第二光罩的相對位置的步驟、使用第二光罩並將第二光阻抗蝕劑層曝光並在第二光阻抗蝕劑層轉印第二圖案的第二曝光步驟、以及使第一光阻抗蝕劑層以及第二光阻抗蝕劑層顯影的步驟。 The present invention relates to a method of manufacturing a piezoelectric vibrator, which includes the step of preparing a piezoelectric substrate having a first main surface and a second main surface facing the first main surface, The step of forming a first photoresistance layer and forming a second photoresistance layer on the second main surface side is to expose the first photoresistance layer to the first photoresistance layer by using a first photomask. The first exposure step of printing the first pattern and the first alignment mark, the step of photographing the second alignment mark of the second mask and recording the photographed image of the second alignment mark, and the first photoresistance layer based on The step of adjusting the relative position of the substrate with respect to the second photomask by shooting images of an alignment mark and a second alignment mark, using the second photomask and exposing the second photoresistance layer to the second photoresistance resist The second exposure step of transferring the second pattern and the step of developing the first photoresistance resist layer and the second photoresistance resist layer.
Description
本發明涉及壓電振動元件的製造方法。 The present invention relates to a method of manufacturing a piezoelectric vibration element.
在振盪裝置、帶通濾波器等所使用的基準信號的信號源,廣泛使用例如由人工水晶構成的壓電振動元件。壓電振動元件在壓電基板的相互對向的主面具備相互對向的激振電極。在壓電振動元件的製造步驟中,例如在形成壓電基板的外形形狀時,在具有壓電性的基板的兩面圖案成型光阻抗蝕劑層,從該基板的兩面實施蝕刻。當使用單面曝光機在兩面的光阻抗蝕劑形成圖案的情況下,需要兩面圖案的對位元。例如在專利文獻1中,公開了在形成光阻抗蝕劑層前在基板形成對準標記,使光罩的對準標記與光阻抗蝕劑層的對準標記對齊,來使兩面圖案的位置對齊的方法。 As signal sources of reference signals used in oscillation devices, band-pass filters, etc., piezoelectric vibration elements made of artificial crystals, for example, are widely used. The piezoelectric vibrating element includes excitation electrodes facing each other on the principal surfaces of the piezoelectric substrate facing each other. In the manufacturing step of the piezoelectric vibrating element, for example, when forming the outer shape of the piezoelectric substrate, a photoresist layer is patterned on both sides of a piezoelectric substrate, and etching is performed from both sides of the substrate. When a single-sided exposure machine is used to form patterns on both sides of the photoresistance etchant, the alignment of the patterns on both sides is required. For example,
現有技術文獻 Prior art literature
專利文獻 Patent literature
專利文獻1:日本特開2004-45933號公報 Patent Document 1: Japanese Patent Application Publication No. 2004-45933
當在基板的第一主面側的第一光阻抗蝕劑轉印第一圖案以及第一對準標記,使第一光阻抗蝕劑顯影,在第二主面側的第二光阻抗蝕劑轉印第二圖案以及第二對準標記,使第二光阻抗蝕劑顯影的情況下,第一對準標記在 顯影過程中溶化流出而使外形尺寸變化,從而存在第一對準標記與第二對準標記的對位元的精度降低的可能性。 When the first photoresistance resist on the first main surface side of the substrate transfers the first pattern and the first alignment mark, the first photoresistance resist is developed, and the second photoresistance resist on the second main surface side When the second pattern and the second alignment mark are transferred and the second photoresistance is developed, the first alignment mark melts and flows out during the development process to change the outer dimension, so that the first alignment mark and the second alignment mark are present. 2. Possibility of lowering the accuracy of the alignment of the alignment mark.
本發明是鑒於上述的情況而完成的,其目的在於提供一種能夠實現加工精度的提高的壓電振動元件的製造方法。 The present invention has been completed in view of the above-mentioned circumstances, and its object is to provide a method of manufacturing a piezoelectric vibrating element that can improve processing accuracy.
本發明的一方面的壓電振動元件的製造方法包含:準備具有第一主面和與第一主面對向的第二主面且具有壓電性的基板的步驟、在基板的第一主面側形成第一光阻抗蝕劑層,並在第二主面側形成第二光阻抗蝕劑層的步驟、使用第一光罩將第一光阻抗蝕劑層曝光,在第一光阻抗蝕劑層轉印第一圖案以及第一對準標記的第一曝光步驟、拍攝第二光罩的第二對準標記,並記錄第二對準標記的拍攝影像的步驟、基於第一光阻抗蝕劑層的第一對準標記與第二對準標記的拍攝影像,調整基板上相對於第二光罩的相對位置的步驟、使用第二光罩將第二光阻抗蝕劑層曝光並在第二光阻抗蝕劑層轉印第二圖案的第二曝光步驟、以及使第一光阻抗蝕劑層以及第二光阻抗蝕劑層顯影的步驟。 A method of manufacturing a piezoelectric vibrating element according to an aspect of the present invention includes the step of preparing a piezoelectric substrate having a first main surface and a second main surface facing the first main surface; The step of forming a first photoresistance resist layer on the surface side and forming a second photoresistance resist layer on the second main surface side is to expose the first photoresistance resist layer to the first photoresistance layer by using a first photomask. The first exposure step of transferring the first pattern and the first alignment mark by the agent layer, the step of photographing the second alignment mark of the second mask, and the step of recording the captured image of the second alignment mark, based on the first photoresistance etching The step of adjusting the relative position of the first alignment mark and the second alignment mark on the substrate with respect to the second photomask, using the second photomask to expose the second photoresistance layer and the The second exposure step of transferring the second pattern to the two photoresistance resist layers, and the step of developing the first photoresistance resist layer and the second photoresistance resist layer.
根據上述樣態,由於不經過顯影步驟,所以第一光阻抗蝕劑層的第一對準標記的形狀不變化,能夠提高第一光阻抗蝕劑層的第一對準標記與第二光罩的第二對準標記的對位元精度。由此,能夠實現蝕刻步驟的加工精度的提高。 According to the above aspect, since the development step is not passed, the shape of the first alignment mark of the first photoresistance layer does not change, and the first alignment mark and the second photomask of the first photoresistance layer can be improved. Alignment accuracy of the second alignment mark. As a result, the processing accuracy of the etching step can be improved.
根據本發明,能夠提供能夠實現加工精度的提高的壓電振動元件的製造方法。 According to the present invention, it is possible to provide a method of manufacturing a piezoelectric vibrating element that can achieve an improvement in processing accuracy.
110‧‧‧呈壓電性的基板 110‧‧‧Piezoelectric substrate
111‧‧‧第一主面 111‧‧‧First Main Side
112‧‧‧第二主面 112‧‧‧Second Main Side
121‧‧‧第一金屬層 121‧‧‧First metal layer
122‧‧‧第二金屬層 122‧‧‧Second metal layer
131‧‧‧第一光阻抗蝕劑層 131‧‧‧First photoresistance layer
132‧‧‧第二光阻抗蝕劑層 132‧‧‧Second photoresistance layer
140‧‧‧工作臺 140‧‧‧Working table
142‧‧‧窗部 142‧‧‧Window
143‧‧‧驅動部 143‧‧‧Drive
144‧‧‧光源 144‧‧‧Light source
145‧‧‧光束 145‧‧‧Beam
151‧‧‧第一光罩 151‧‧‧First Mask
MK1‧‧‧第一對準標記 MK1‧‧‧First alignment mark
PT1‧‧‧第一圖案 PT1‧‧‧The first pattern
152‧‧‧第二光罩 152‧‧‧Second Mask
MK2‧‧‧第二對準標記 MK2‧‧‧Second alignment mark
PT2‧‧‧第二圖案 PT2‧‧‧The second pattern
160‧‧‧影像處理裝置 160‧‧‧Image processing device
161‧‧‧照相機 161‧‧‧Camera
162‧‧‧監視器 162‧‧‧Monitor
163‧‧‧拍攝影像 163‧‧‧Shooting images
圖1是表示本發明的實施方式的壓電振動元件的製造方法中的基板的蝕刻的流程圖。 FIG. 1 is a flowchart showing etching of a substrate in a method of manufacturing a piezoelectric vibration element according to an embodiment of the present invention.
圖2是表示安裝於曝光機之前的基板的剖視圖。 Fig. 2 is a cross-sectional view showing the substrate before being mounted on the exposure machine.
圖3是表示安裝於曝光機的基板的圖。 Fig. 3 is a diagram showing a substrate mounted on an exposure machine.
圖4是表示使第一光阻抗蝕劑曝光的步驟的圖。 Fig. 4 is a diagram showing a step of exposing a first photoresistance etchant.
圖5是表示拍攝第二光罩的第二對準標記的步驟的圖。 Fig. 5 is a diagram showing a procedure of photographing a second alignment mark of a second mask.
圖6是表示使用對準標記進行位置調整的步驟的圖。 Fig. 6 is a diagram showing a procedure of position adjustment using alignment marks.
圖7是表示將第二光阻抗蝕劑曝光的步驟的圖。 Fig. 7 is a diagram showing a step of exposing a second photoresistance etchant.
圖8是表示顯影後的基板的圖。 Fig. 8 is a diagram showing the substrate after development.
圖9是壓電振子的一個例子的分解立體圖。 Fig. 9 is an exploded perspective view of an example of a piezoelectric vibrator.
圖10是沿著圖9所示的壓電振子的X-X線的剖視圖。 Fig. 10 is a cross-sectional view taken along line X-X of the piezoelectric vibrator shown in Fig. 9.
圖11是變形例的壓電振動元件的立體圖。 Fig. 11 is a perspective view of a piezoelectric vibration element of a modification.
以下,對本發明的實施方式進行說明。在以下的附圖的記載中,相同或者類似的構成要素由相同或者類似的附圖標記表示。附圖為例示,各部的尺寸、形狀為示意,不應解釋為將本申請發明的技術範圍限定於該實施方式。 Hereinafter, embodiments of the present invention will be described. In the description of the following drawings, the same or similar components are denoted by the same or similar reference signs. The drawings are examples, and the dimensions and shapes of the parts are schematic, and should not be interpreted as limiting the technical scope of the invention of the present application to this embodiment.
<實施方式> <Implementation>
參照圖1~圖8,對本發明的實施方式的壓電振動元件的製造方法進行說明。此處,圖1是表示本發明的實施方式的壓電振動元件的製造方法的基板的蝕刻的流程圖。圖2是表示安裝於曝光機之前的基板的剖視圖。圖3是表示安裝於曝光機的基板的圖。圖4是表示將第一光阻抗蝕劑曝光的步驟的圖。圖5是表示拍攝第二光罩的第二對準標記的步驟的圖。圖6是表示使用對準標記進行位 置調整的步驟的圖。圖7是表示將第二光阻抗蝕劑曝光的步驟的圖。圖8是表示顯影後的基板的圖。 1 to 8, the method of manufacturing the piezoelectric vibration element according to the embodiment of the present invention will be described. Here, FIG. 1 is a flowchart showing the etching of the substrate in the method of manufacturing the piezoelectric vibration element according to the embodiment of the present invention. Fig. 2 is a cross-sectional view showing the substrate before being mounted on the exposure machine. Fig. 3 is a diagram showing a substrate mounted on an exposure machine. Fig. 4 is a diagram showing a step of exposing a first photoresistance etchant. Fig. 5 is a diagram showing a procedure of photographing a second alignment mark of a second mask. Fig. 6 is a diagram showing a procedure for position adjustment using alignment marks. Fig. 7 is a diagram showing a step of exposing a second photoresistance etchant. Fig. 8 is a diagram showing the substrate after development.
參照圖1,對使用單面曝光機將作為呈壓電性的基板而由壓電材料構成的基板110的蝕刻流程進行說明。此外,在以下的實施方式的說明中,例如,壓電振動元件為水晶振動元件(Quartz Crystal Resonator),壓電基板為水晶片(Quartz Crystal Blank),集合壓電基板為水晶晶圓(Quartz Crystal Wafer)。但是,本發明的實施方式不限定於這些。 1, a description will be given of an etching process of a
首先,在開始步驟前,準備由作為壓電材料的人工水晶的平板所構成的基板110。此時,作為人工水晶的基板110形成為與由X軸以及Z'軸特定的面平行的面(以下,稱為“XZ'面”。由其他的軸特定的面也相同。)成為主面,Y'軸與主面的法線方向平行。此外,Y'軸以及Z'軸分別為作為人工水晶的結晶軸的X軸、Y軸、Z軸之中的、使Y軸以及Z軸繞X軸從Y軸向Z軸的方向旋轉35度15分±1分30秒的軸。 First, before starting the step, a
接下來,在基板110的各主面111、112形成金屬層121、122(S11)。如圖2所示,第一金屬層121形成於基板110的第一主面111上,第二金屬層122形成於與第一主面111對向的第二主面112上。第一金屬層121以及第二金屬層122作為相對於在蝕刻水晶時所使用的蝕刻液(例如,氟化銨或者緩衝氫氟酸)的耐蝕膜發揮功能。作為上述的耐蝕膜,例如使用由鉻(Cr)層與金(Au)層構成的多層膜。金屬層通過蒸鍍法、濺射法形成,Cr層被設置於基板110的第一主面111以及第二主面112上。Au層被層疊地設置於在基板110設置的Cr層上。基底層的Cr層提高金屬層相對於基板110的緊貼力,表面層的Au層提高金屬層的耐蝕性。此外,在金屬層121或者122為三層以上的多層膜的情況下,只要設置為Cr層位於比Au層更接近基板110的一側,Au層位於比Cr層更遠離基板110的一側即可。 Next, the metal layers 121 and 122 are formed on the
接下來,在第一金屬層121上形成第一光阻抗蝕劑層131(S12)。接下來,在第二金屬層122上形成第二光阻抗蝕劑層132(S13)。第一光阻抗蝕劑層131是將包含光阻抗蝕劑材料的光阻抗蝕劑溶液塗覆於金屬層121上,通過加熱使溶劑揮發,從而成膜。光阻抗蝕劑溶液例如通過噴塗法、旋塗法塗覆。第二光阻抗蝕劑層132也與第一光阻抗蝕劑層131相同地被成膜。通過以上的步驟,獲得如圖2所示在第一主面111側以及第二主面112側的兩面側具備光阻抗蝕劑層的基板110。光阻抗蝕劑層若為感光性樹脂,則不被特別地限定,但從顯影而獲得的圖案的加工精度的觀點來看,使用被曝光的部分的溶解性較高的正型的感光性樹脂。 Next, a
接下來,在第一光阻抗蝕劑層131轉印第一光罩151的第一圖案PT1以及第一對準標記MK1(S14)。本步驟S14為將第一光阻抗蝕劑層131曝光的第一曝光步驟。具體而言,如圖3所示,首先,將基板110安裝於單面曝光機的工作臺140上。工作臺140設置為具有突出的支承部141,第二光阻抗蝕劑層132與支承部141接觸。換句話說,第二光阻抗蝕劑層132位於工作臺140側,第一光阻抗蝕劑層131位於與工作臺140相反的一側。工作臺140具有設置於與基板110對向的位置的窗部142。窗部142為貫通工作臺140的開口部,能夠觀察工作臺140的相反側。換句話說,在圖3所示的狀態下,能夠從工作臺140的與基板110存在的一側相反的一側透過工作臺140的窗部142觀察第二光阻抗蝕劑層132的表面。此外,窗部142也可以設置複數個。 Next, the first pattern PT1 of the
圖4是利用沿著圖3的IV-IV線的剖視圖表示將第一光阻抗蝕劑層131曝光的步驟的圖。工作臺140被驅動部143驅動,而進行第一光阻抗蝕劑層131相對於第一光罩151的位置調整。之後,從光源144向第一光阻抗蝕劑層131照射光束145。在第一光罩151描繪有第一圖案PT1以及第一對準標記MK1。第一光罩151根據第一圖案PT1以及第一對準標記MK1供光束145透過或者將該 光束145遮擋。即,憑藉使用了第一光罩151的曝光,在第一光阻抗蝕劑層131轉印第一圖案PT1以及第一對準標記MK1。第一光阻抗蝕劑層131中的被轉印的第一圖案PT1以及第一對準標記MK1的溶解性等物性與周圍不同,在之後的顯影步驟中,利用溶解性的不同,並通過利用溶劑的清洗來除去第一光阻抗蝕劑層131的一部分。物性的不同也波及光學特性,從而第一光阻抗蝕劑層131中的第一圖案PT1以及第一對準標記MK1即使不顯影也可能被光學地識別。此外,為了提高第一光阻抗蝕劑層131中的第一圖案PT1以及第一對準標記MK1的識別性,第一光阻抗蝕劑層131也可以具有光阻變色材料。據此,第一光阻抗蝕劑層131根據光束145對應於第一圖案PT1以及第一對準標記MK1進行變色。 4 is a diagram showing a step of exposing the first photoresistance resist
接下來,拍攝第二光罩152的第二對準標記MK2並記錄拍攝影像163(S15)。參照圖5對該步驟S15進行說明。首先,在不安裝基板110的狀態下,安裝描繪有第二圖案PT2以及第二對準標記MK2的第二光罩152。接下來,向第二光罩152照射光束145,利用影像處理裝置160的照相機161拍攝第二對準標記MK2。拍攝裝置的照相機161位於工作臺140的與第二光罩152存在的一側相反的一側,透過工作臺140的窗部142拍攝第二光罩152的第二對準標記MK2。然後,影像處理裝置160將由照相機161拍攝的第二對準標記MK2的影像傳遞至監視器162,記錄為拍攝影像163。 Next, the second alignment mark MK2 of the
接下來,進行位置調整,以使得拍攝影像163與第一光阻抗蝕劑層131上的對準標記MK1、MK2影像光阻能夠重疊(S16)。參照圖6對該步驟S16進行說明。首先,在工作臺140上安裝基板110,以使得支承部141與第一光阻抗蝕劑層131接觸,即第一光阻抗蝕劑層131朝向照相機161側。接下來,影像處理裝置160通過照相機161獲取第一光阻抗蝕劑層131的第一對準標記MK1的影像。接下來,保持將第二光罩152相對于光源144的位置固定于步驟S15中的位置的狀態,通過驅動部143驅動工作臺140。然後,調整基板110(第一光 阻抗蝕劑層131、第二光阻抗蝕劑層132)的位置,以使得進行影像獲取的第一光阻抗蝕劑層131的第一對準標記MK1相對於被記錄的拍攝影像163的第二對準標記MK2對齊。 Next, position adjustment is performed so that the captured
接下來,在第二光阻抗蝕劑層132轉印第二光罩152的第二圖案PT2(S17)。本步驟S17為將第二光阻抗蝕劑層132曝光的第二曝光步驟。如圖7所示,第二光阻抗蝕劑層132的曝光與第一光阻抗蝕劑層131的曝光相同。通過本步驟S17,在第二光阻抗蝕劑層132轉印有第二圖案PT2以及第二對準標記MK2。 Next, the second pattern PT2 of the
接下來,使第一光阻抗蝕劑層131以及第二光阻抗蝕劑層132顯影(S18)。利用通過曝光產生的相對於顯影液的溶解性的差異,通過顯影液洗去第一光阻抗蝕劑層131以及第二光阻抗蝕劑層132的不必要的部分。在圖8所示的例子中,第二光阻抗蝕劑層132為正型的感光性樹脂,通過曝光使溶解性增大,從而使對應於被曝光的第二圖案PT2以及第二對準標記MK2的第二光阻抗蝕劑層132被除去。此外,如圖8所示,第一對準標記MK1可以設置有複數個,第二對準標記MK2也可以設置有複數個。在設置複數個第一對準標記MK1的情況下,複數個第一對準標記MK1相互分離有利於提高對位的精度。 Next, the
接下來,進行蝕刻(S19)。在本步驟S19中,首先,進行對應於第一圖案PT1的第一金屬層121的除去以及對應於第二圖案PT2的第二金屬層122的除去。接下來,進行對應於第一圖案PT1以及第二圖案的基板110的除去。金屬層的除去例如通過使用了碘系的蝕刻溶液的濕式蝕刻進行處理。水晶的除去例如通過使用了氟酸系的蝕刻溶液的濕式蝕刻進行處理。 Next, etching is performed (S19). In this step S19, first, the removal of the
如上,對在基板110中形成複數個壓電基板的步驟的本實施方式的應用例進行了說明。即,第一圖案PT1以及第二圖案PT2為用於在基板110中形成複數個壓電基板的外形的圖案。在該情況下,第一光阻抗蝕劑層131的第 一圖案PT1為從基板110的第一主面111的法線方向俯視時的壓電基板的外形圖案,第二光阻抗蝕劑層132的第二圖案PT2為從基板110的第二主面112的法線方向俯視時的壓電基板的外形圖案。第一光阻抗蝕劑層131的第一圖案PT1優選在第一主面111的法線方向,與第二光阻抗蝕劑層132的第二圖案PT2高精度地重疊。 As above, the application example of the present embodiment of the step of forming a plurality of piezoelectric substrates on the
但是,本實施方式的壓電振動元件的製造方法只要為在兩面形成光阻抗蝕劑層而需要使對各個光阻抗蝕劑層的圖案成型對位元的步驟,則也能夠應用于任意的步驟。例如,基板110也可以為具有複數個壓電基板的集合壓電基板,第一圖案PT1以及第二圖案PT2分別為用於使壓電基板的一部分的厚度變化的圖案。在第一圖案PT1以及第二圖案PT2為用於形成檯面式構造的圖案的情況下,優選第一光阻抗蝕劑層131的第一圖案PT1以及第二光阻抗蝕劑層132的第二圖案PT2為形成為與位於壓電基板的中央的振動部重疊的圖案,在第一主面111的法線方向相互高精度地重疊。而且,在蝕刻的步驟S19中,在基板110進行半蝕刻。另外,例如,第一圖案PT1以及第二圖案PT2也可以分別為用於在壓電基板形成各種電極的圖案。在該情況下,第一圖案PT1包含為了形成第一激振電極而形成為與壓電基板的振動部重疊的圖案,第二圖案PT2包含為了形成第二激振電極而形成為與壓電基板的振動部重疊的圖案。第一光阻抗蝕劑層131的第一圖案PT1中的與第一激振電極對應的部分優選在第一主面111的法線方向,與第二光阻抗蝕劑層132的第二圖案PT2中的和第二激振電極對應的部分高精度地重疊。而且,在蝕刻的步驟S19中,蝕刻第一金屬層121以及第二金屬層122,不蝕刻基板110。 However, the method of manufacturing the piezoelectric vibrating element of the present embodiment can be applied to any step as long as it requires a step of patterning the respective photoresistance resist layers in order to form photoresistance layers on both sides. . For example, the
壓電振動元件的製造在上述的步驟後,實施使壓電基板從成為集合壓電基板的基板110分離而小片化的步驟。從集合壓電基板分離的壓電基板取得為具備各種電極的壓電振動元件。 In the manufacture of the piezoelectric vibrating element, after the above-mentioned steps, a step of separating the piezoelectric substrate from the
如以上那樣,根據本實施方式,提供壓電振動元件的製造方法,其包含:準備具有第一主面111和與第一主面111對向的第二主面112的呈壓電性的基板110的步驟、在基板110的第一主面111側形成第一光阻抗蝕劑層131並在第二主面112側形成第二光阻抗蝕劑層132的步驟、使用第一光罩151將第一光阻抗蝕劑層131曝光從而在第一光阻抗蝕劑層131轉印第一圖案PT1以及第一對準標記MK1的第一曝光步驟、拍攝第二光罩152的第二對準標記MK2並記錄第二對準標記MK2的拍攝影像163的步驟、基於第一光阻抗蝕劑層131的第一對準標記MK1與第二對準標記MK2的拍攝影像163調整基板110上相對於第二光罩152的相對位置的步驟、使用第二光罩152將第二光阻抗蝕劑層132曝光從而在第二光阻抗蝕劑層132轉印第二圖案PT2的第二曝光步驟、以及使第一光阻抗蝕劑層以及第二光阻抗蝕劑層131、132顯影的步驟。 As described above, according to the present embodiment, there is provided a method of manufacturing a piezoelectric vibration element, including: preparing a piezoelectric substrate having a first main surface 111 and a second
根據上述的實施方式,由於不經過顯影步驟,所以第一光阻抗蝕劑層的第一對準標記的形狀不變化,能夠提高第一光阻抗蝕劑層的第一對準標記與第二光罩的第二對準標記的對位元的精度。由此,蝕刻步驟的加工精度提高,從而能夠提高壓電振動元件的製造步驟的成品率。因此,能夠提供能夠減少製造成本的壓電振動元件的製造方法。 According to the above-mentioned embodiment, since the development step is not passed, the shape of the first alignment mark of the first photoresistance layer does not change, and the first alignment mark and the second light of the first photoresistance layer can be improved. Alignment accuracy of the second alignment mark of the cover. As a result, the processing accuracy of the etching step is improved, and the yield of the manufacturing step of the piezoelectric vibration element can be improved. Therefore, it is possible to provide a method of manufacturing a piezoelectric vibration element that can reduce manufacturing costs.
第一光阻抗蝕劑層131也可以包含在第一曝光步驟中能使第一光阻抗蝕劑層131對應第一圖案PT1以及第一對準標記MK1變色的材料。例如,第一光阻抗蝕劑層131包含照射光從而可逆地變色的、所謂光阻變色材料。據此,能夠更加鮮明地識別拍攝影像中的第一對準標記的邊界部分,因此能夠提高對位的精度。 The
在形成第一光阻抗蝕劑層以及第二光阻抗蝕劑層131、132的步驟前,在基板110的第一主面111上形成第一金屬層121,在第二主面112上形成第二金屬層122,從而使形成第一光阻抗蝕劑層以及第二光阻抗蝕劑層131、 132的步驟也可以包含在第一金屬層121上形成第一光阻抗蝕劑層131,在第二金屬層122上形成第二光阻抗蝕劑層132的步驟。由此,使第一以及第二金屬層作為壓電基板的蝕刻步驟中的防蝕膜發揮功能,從而能夠提高蝕刻步驟的加工精度。另外,也能夠在第一金屬層以及第二金屬層中加工各種電極。 Before the step of forming the first photoresistance layer and the
也可以讓第一圖案PT1為包含第一激振電極的圖案的電極圖案,第二圖案PT2為包含隔著壓電基板與第一激振電極對向的第二激振電極的圖案的電極圖案。據此,提高第一激振電極以及第二激振電極的相對位置的精度,從而能夠減少形成激振電極的步驟中的不合格品的產生率。 The first pattern PT1 may be an electrode pattern including a pattern of the first excitation electrode, and the second pattern PT2 may be an electrode pattern including a pattern of the second excitation electrode facing the first excitation electrode via the piezoelectric substrate. . According to this, the accuracy of the relative positions of the first excitation electrode and the second excitation electrode can be improved, and it is possible to reduce the occurrence rate of defective products in the step of forming the excitation electrode.
第一圖案以及上述第二圖案PT1、PT2也可以為從第一主面111的法線方向俯視時的壓電基板的外形圖案。將本實施方式的製造方法應用於壓電基板的外形形狀的形成,從而能夠減少蝕刻基板而形成具有複數個壓電基板的集合壓電基板的步驟中的不合格品的產生率。 The first pattern and the second patterns PT1 and PT2 may be the outer shape patterns of the piezoelectric substrate when viewed from the normal direction of the first main surface 111. Applying the manufacturing method of the present embodiment to the formation of the outer shape of the piezoelectric substrate can reduce the incidence of defective products in the step of etching the substrate to form an aggregate piezoelectric substrate having a plurality of piezoelectric substrates.
第一圖案以及上述第二圖案PT1、PT2也可以為用於使壓電基板的一部分的厚度變化的圖案。據此,能夠減少將壓電基板從平板狀加工為例如檯面式構造的步驟中的不合格品的產生率。 The first pattern and the second patterns PT1 and PT2 may be patterns for changing the thickness of a part of the piezoelectric substrate. According to this, it is possible to reduce the occurrence rate of defective products in the step of processing the piezoelectric substrate from a flat plate shape to, for example, a mesa structure.
第一以及第二對準標記MK1、MK2也可以分別設置於至少兩個位置。據此,在將對準標記彼此重疊而進行對位時,能夠提高基板整個面的位置調整的正確性。 The first and second alignment marks MK1 and MK2 may also be provided in at least two positions, respectively. According to this, when the alignment marks are superimposed on each other for positioning, the accuracy of position adjustment of the entire surface of the substrate can be improved.
另外,也可以包含通過蝕刻將基板110形成具有複數個壓電基板的集合壓電基板的步驟,以及使壓電基板從集合壓電基板分離而形成壓電振動元件的步驟。經過上述步驟被製造的壓電振動元件能夠抑制頻率特性的差別,因此能夠抑制不合格品的產生率,減少製造成本。 In addition, it may include a step of forming the
接下來,參照圖9以及圖10,對利用本實施方式的壓電振動元件而被製造的壓電振子的構成例進行說明。此外,以下,列舉作為壓電基板利用 了水晶片(Quartz Crystal Blank)的水晶振子(Quartz Crystal Resonator Unit)為例進行說明。此處,圖9是壓電振子的一個例子的分解立體圖。圖10是沿著圖9的X-X線的剖視圖。 Next, referring to FIG. 9 and FIG. 10, a configuration example of a piezoelectric vibrator manufactured using the piezoelectric vibrating element of this embodiment will be described. In addition, in the following, a Quartz Crystal Resonator Unit (Quartz Crystal Resonator Unit) using a quartz crystal blank (Quartz Crystal Blank) as a piezoelectric substrate will be described as an example. Here, FIG. 9 is an exploded perspective view of an example of the piezoelectric vibrator. Fig. 10 is a cross-sectional view taken along line X-X in Fig. 9.
如圖9所示,水晶振子1具備水晶振動元件(Quartz Crystal Resonator)10、蓋部件20以及基體部件30。蓋部件20以及基體部件30為用於收容水晶振動元件10的保持器。在圖9所示的例子中,蓋部件20呈凹狀,基體部件30呈平板狀。相反地,也可以使蓋部件20呈平板狀,基體部件30呈凹狀。 As shown in FIG. 9, the
水晶振動元件10具有AT切割型的水晶片(Quartz Crystal Blank)11。AT切割型的水晶片11在將作為人工水晶的結晶軸的X軸、Y軸、Z軸中的、使Y軸以及Z軸繞X軸從Y軸向Z軸的方向旋轉35度15分±1分30秒的軸分別設為Y'軸以及Z'軸的情況下,作為主面切出與由X軸以及Z'軸特定的面平行的面(以下,稱為“XZ'面”。)。水晶片11在XZ'面中呈矩形狀,具有與X軸方向平行的長邊延伸的長邊方向、與Z'軸方向平行的短邊延伸的短邊方向以及與Y'軸方向平行的厚度延伸的厚度方向。水晶片11具有作為相互對向的XZ'面的第一主面12a、第二主面12b以及沿著短邊延伸並將兩主面連接的端面12c。 The
使用了AT切割水晶片的水晶振動元件在較寬的溫度範圍內具有極高的頻率穩定性,另外,經時變化特性也優越,並且能夠以低成本製造。另外,AT切割水晶振動元件使用厚度剪力振動模式(Thickness Shear Mode)作為主振動模式。此外,水晶片的切割角度也可以應用AT切割以外的不同的切割(例如BT切割等)。另外,水晶片11在XZ'面呈矩形狀,但不限定於此,也可以呈梳齒狀。 The crystal vibrating element using the AT-cut crystal has extremely high frequency stability in a wide temperature range, and also has excellent time-dependent characteristics, and can be manufactured at low cost. In addition, AT-cut crystal vibration elements use Thickness Shear Mode as the main vibration mode. In addition, different cutting angles other than AT cutting (for example, BT cutting, etc.) can also be applied to the cutting angle of the crystal wafer. In addition, the
水晶振動元件10具有構成一對電極的第一激振電極14a以及第二激振電極14b。第一激振電極14a設置於第一主面12a的中央部。另外,第二激振電極14b設置於第二主面12b的中央部。第一激振電極14a與第二激振電極14b設 置為隔著水晶片11相互對向。第一激振電極14a與第二激振電極14b配置為大致整體在XZ'面相互重疊。 The
水晶振動元件10具有一對引出電極15a、15b與一對連接電極16a、16b。連接電極16a經由引出電極15a與第一激振電極14a電連接。另外,連接電極16b經由引出電極15b與第二激振電極14b電連接。連接電極16a以及16b為用於將第一激振電極14a以及第二激振電極14b電連接於基體部件30的端子。在第一主面12a中,第一激振電極14a、引出電極15a以及連接電極16a為連續設置。另外,連接電極16a遍佈端面12c以及第二主面12b延伸。即使在第二主面12b中也相同,第二激振電極14b、引出電極15b以及連接電極16b為連續設置。另外,連接電極16b遍佈端面12c以及第一主面12a延伸。在圖7所示的構成例中,連接電極16a以及16b沿著水晶片11的短邊方向(Z'軸方向)排列。此外,連接電極16a以及16b也可以沿著水晶片11的長邊方向(X軸方向)排列。另外,連接電極16a以及16b可以配置於水晶片11的長邊或者短邊的中央附近,也可以分別配置於水晶片11的其他的邊。 The
導電性保持部件36a、36b在基體部件30的一對電極焊盤分別電連接連接電極16a以及16b。導電性保持部件36a、36b例如由紫外線固化樹脂等的導電性粘合劑形成。導電性保持部件36a例如與第二主面12b以及端面12c的連接電極16a接觸。導電性保持部件36b也相同。經由使導電性保持部件與連接電極的接觸面積增加,從而能夠提高電極焊盤與連接電極的導電性。 The
蓋部件20接合於基體部件30,由此將水晶振動元件10收容於內部空間26。蓋部件20具有內表面24以及外表面25,且呈朝向基體部件30的第三主面32a開口的凹狀。蓋部件20具有與基體部件30的第三主面32a對向的頂面部21以及連接於頂面部21的外緣並且向與頂面部21的主面交叉的方向延伸的側壁部22。蓋部件20在凹狀的開口緣(側壁部22的端面)具有與基體部件30的第三 主面32a對向的對向面23,該對向面23呈框狀延伸,以便包圍水晶振動元件10的周圍。 The
基體部件30將水晶振動元件10支承為能夠激振。具體而言,水晶振動元件10經由導電性保持部件36a、36b以能夠被激振之方式保持於基體部件30的第三主面32a。基體部件30具有基體31。基體31具有作為相互對向的XZ'面的第三主面32a以及第四主面32b。基體31為例如絕緣性陶瓷(氧化鋁)等的燒結材料。 The
基體部件30具有設置於第三主面32a的電極焊盤33a、33b以及設置於第二主面的外部電極35a、35b、35c、35d。電極焊盤33a、33b為用於將基體部件30與水晶振動元件10電連接的端子。另外,外部電極35a、35b、35c、35d為用於將未圖示的安裝基板與水晶振子1電連接的端子。電極焊盤33a經由沿Y'軸方向延伸的導通電極34a電連接於外部電極35a,電極焊盤33b經由沿Y'軸方向延伸的導通電極34b電連接於外部電極35b。導通電極34a、34b形成於沿Y'軸方向貫通基體31的通孔內。 The
基體部件30的電極焊盤33a、33b在第三主面32a上設置於基體部件30的X軸負方向側的短邊附近,從基體部件30的短邊遠離並且沿著該短邊方向排列。電極焊盤33a經由導電性保持部件36a連接于水晶振動元件10的連接電極16a,另一方面,電極焊盤33b經由導電性保持部件36b連接于水晶振動元件10的連接電極16b。 The
複數個外部電極35a、35b、35c、35d設置於第四主面32b的各個角附近。例如,將外部電極35a、35b配置於電極焊盤33a、33b的正下方。由此,通過沿Y'軸方向延伸的導通電極34a、34b,能夠將外部電極35a、35b電連接於電極焊盤33a、33b。四個外部電極35a~35d中的、配置於基體部件30的X軸負方向側的短邊附近的外部電極35a、35b為供給水晶振動元件10的輸入輸出信 號的輸入輸出電極。另外,配置於基體部件30的X軸正方向側的短邊附近的外部電極35c、35d成為不供給水晶振動元件10的輸入輸出信號的虛擬電極。在上述的虛擬電極也不對安裝水晶振子1的未圖示的安裝基板上的其他的電子元件供給有輸入輸出信號。或者,外部電極35c、35d也可以為供給接地電位的接地用電極。在蓋部件20由導電性材料構成的情況下,將蓋部件20連接于作為接地用電極的外部電極35c、35d,由此對蓋部件20附加遮罩功能。 A plurality of
在基體31的第三主面32a設置有密封框37。例如,密封框37在從第三主面32a的法線方向俯視時呈矩形的框狀。另外,電極焊盤33a、33b配置於密封框37的內側,密封框37設置為包圍水晶振動元件10。密封框37由導電材料構成。在密封框37上設置有後述的接合部件40,由此,蓋部件20經由接合部件40以及密封框37接合於基體部件30。例如,基體部件30的電極焊盤33a、33b、外部電極35a~d以及密封框37均由金屬膜構成。該金屬膜例如構成為從接近基體31的一側(下層)至分離的一側(上層),按順序層疊有鉬(Mo)層、鎳(Ni)層以及金(Au)層。另外,導通電極34a、34b能夠在基體31的通孔填充鉬(Mo)等金屬材料而形成。 A sealing
蓋部件20以及基體部件30兩者經由密封框37以及接合部件40被接合,由此水晶振動元件10被密封于由蓋部件20與基體部件30圍起的內部空間(腔體)26。在該情況下,優選內部空間26的壓力為低於大氣壓力的真空狀態,由此能夠減少因第一激振電極14a、第二激振電極14b的氧化引起的水晶振子1的頻率特性的經時變化等。 The
接合部件40遍佈蓋部件20以及基體部件30的各全周圍設置。具體而言,接合部件40設置於密封框37上。密封框37以及接合部件40夾設于蓋部件20的側壁部22的對向面23與基體部件30的第三主面32a之間,由此水晶振動元件10被蓋部件20以及基體部件30密封。 The joining
對於本構成例的水晶振動元件10而言,水晶片11的長邊方向的一端(配置有導電性保持部件36a、36b的一側的端部)為固定端,另一端成為自由端。另外,水晶振動元件10、蓋部件20以及基體部件30在XZ'面中,分別呈矩形狀,長邊方向以及短邊方向相互相同。 In the
但是,水晶振動元件10的固定端的位置不被特別地限定,也可以在水晶片11的長邊方向的兩端固定於基體部件30。在該情況下,只要以將水晶振動元件10固定於水晶片11的長邊方向的兩端的方式形成水晶振動元件10以及基體部件30的各電極即可。 However, the position of the fixed end of the
在本構成例的水晶振子1中,經由基體部件30的外部電極35a、35b,向水晶振動元件10的一對激振電極14a、14b之間外加交流電電場。由此,通過厚度剪力振動模式等規定的振動模式使水晶片11振動,從而獲得伴隨著該振動的共振特性。 In the
在製造以上的水晶振子的情況下,使用應用本實施方式的製造方法的水晶振動元件,從而能夠通過水晶振動元件的加工精度的提高來抑制水晶振子的性能的差別。 In the case of manufacturing the above crystal resonator, the use of the crystal resonator element to which the manufacturing method of this embodiment is applied can suppress the difference in the performance of the crystal resonator by improving the processing accuracy of the crystal resonator element.
接下來,對壓電振子的變形例進行說明。在以下的變形例中,省略對與上述實施方式共通的情況的敘述,僅對不同的點進行說明。特別地,不依次說明相同的構成帶來的相同的作用效果。 Next, a modification example of the piezoelectric vibrator will be described. In the following modification examples, descriptions of the cases that are common to the above-mentioned embodiment are omitted, and only the different points will be described. In particular, the same action and effect brought by the same configuration will not be described in sequence.
<變形例> <Modifications>
圖11為變形例的壓電振動元件的立體圖。變形例在壓電振動元件210的形狀為音叉型這點,與圖9所示的構成例不同。具體而言,壓電基板211具有相互平行地配置的兩個音叉臂部219a、219b。音叉臂部219a、219b沿X軸方向延伸,並在Z'軸方向並排,且被端面212c側的連結部219c相互連結。在音叉臂部219a中,在與XZ'面平行且相互對向的一對主面分別設置有激振電極 214a,在與該一對主面交叉且相互對向的一對側端面分別設置有激振電極214b。在音叉臂部219b中,在一對主面分別設置有激振電極214b,在一對側端面分別設置有激振電極214a。此外,壓電振動元件210的構成不被特別地限定,音叉臂部的形狀、激振電極的配置等也可以不同。 Fig. 11 is a perspective view of a piezoelectric vibration element according to a modification. The modification example is different from the configuration example shown in FIG. 9 in that the shape of the
即使在以上的變形例中,也能夠獲得與上述的效果相同的效果。 Even in the above modified example, the same effect as the above-mentioned effect can be obtained.
此外,以上說明的實施方式用於使本發明的理解變得容易,並非將本發明限定來解釋。本發明能夠不脫離其主旨地進行變更/改進,並且在本發明中也包含有其等價物。即,本領域技術人員對各實施方式適當地施加設計變更的技術方案只要具備本發明的特徵,也包含于本發明的範圍內。例如,各實施方式具備的各要素及其配置、材料、條件、形狀、尺寸等不被例示的例子限定,而能夠適當地變更。另外,各實施方式具備的各要素在技術方面能夠盡可能地組合,將這些要素組合的技術方案只要包含本發明的特徵,則也包含于本發明的範圍內。 In addition, the above-described embodiments are for facilitating the understanding of the present invention, and are not intended to limit the present invention. The present invention can be changed/improved without departing from its gist, and equivalents thereof are also included in the present invention. That is, technical solutions in which a person skilled in the art appropriately applies design changes to each embodiment are included in the scope of the present invention as long as they have the characteristics of the present invention. For example, each element provided in each embodiment and its arrangement, materials, conditions, shape, size, etc. are not limited to the illustrated examples, and can be changed as appropriate. In addition, the various elements provided in each embodiment can be combined as much as possible in terms of technology, and a technical solution combining these elements is also included in the scope of the present invention as long as it includes the characteristics of the present invention.
S11~S17‧‧‧步驟 S11~S17‧‧‧Step
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Also Published As
Publication number | Publication date |
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JP6617928B2 (en) | 2019-12-11 |
CN108075741B (en) | 2021-11-30 |
CN108075741A (en) | 2018-05-25 |
JP2018082396A (en) | 2018-05-24 |
TW201830850A (en) | 2018-08-16 |
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