TWI701749B - Check method for marking - Google Patents

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TWI701749B
TWI701749B TW105118833A TW105118833A TWI701749B TW I701749 B TWI701749 B TW I701749B TW 105118833 A TW105118833 A TW 105118833A TW 105118833 A TW105118833 A TW 105118833A TW I701749 B TWI701749 B TW I701749B
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line
crack
light
substrate
incident light
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TW105118833A
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TW201709374A (en
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岩坪佑磨
曾山浩
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日商三星鑽石工業股份有限公司
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination
    • G01N21/95Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/958Inspecting transparent materials or objects, e.g. windscreens
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/24Optical enhancement of defects or not directly visible states, e.g. selective electrolytic deposition, bubbles in liquids, light emission, colour change
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00Technologies relating to the processing of minerals
    • Y02P40/50Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57Improving the yield, e-g- reduction of reject rates

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)

Abstract

本發明之課題在於判別是否適當地形成有裂痕線。 The subject of the present invention is to determine whether a crack line is properly formed.

於脆性基板4之第1面SF1上設置有劃線SL,該劃線SL具有於第1面SF1上之一位置沿延伸方向延伸之溝槽線TL。將藉由雷射產生之入射光LI自脆性基板4之外部經由第1面SF1向脆性基板4之第1面SF1之一位置之正下方照射。入射光LI之光軸方向具有傾斜成分,該傾斜成分係以垂直於第1面SF1之方向為基準時,朝向在第1面SF1上與延伸方向垂直之方向。藉由裂痕線CL反射入射光LI而產生朝向第2面SF2之反射光LR。藉由將反射光LR反射,而產生自第2面SF2經由第1面SF1朝向脆性基板4之外之出射光LO。測定出射光LO之強度。 A scribe line SL is provided on the first surface SF1 of the brittle substrate 4, and the scribe line SL has a groove line TL extending along the extending direction at a position on the first surface SF1. The incident light LI generated by the laser is irradiated from the outside of the brittle substrate 4 through the first surface SF1 to directly below a position of the first surface SF1 of the brittle substrate 4. The optical axis direction of the incident light LI has an oblique component, and the oblique component is oriented in a direction perpendicular to the extending direction on the first surface SF1 when the direction perpendicular to the first surface SF1 is used as a reference. The incident light LI is reflected by the crack line CL to generate the reflected light LR toward the second surface SF2. By reflecting the reflected light LR, the outgoing light LO from the second surface SF2 to the outside of the brittle substrate 4 through the first surface SF1 is generated. Measure the intensity of the emitted light LO.

Description

劃線之檢查方法 Inspection method for marking

本發明係關於一種形成於脆性基板上之劃線之檢查方法。 The present invention relates to a method for inspecting scribe lines formed on a brittle substrate.

於平面顯示面板或太陽電池面板等電氣設備之製造中,經常需要將玻璃基板等脆性基板分斷。首先,於基板上形成劃線,繼而沿著該劃線將基板分斷。劃線可藉由使用切割器具對基板機械性地進行加工而形成。藉由切割器具於基板上滑動或滾動,而於基板上形成由塑性變形所致之溝槽,與此同時,於該溝槽之正下方形成垂直裂痕。其後,完成被稱為斷裂步驟之應力賦予。藉由斷裂步驟使裂痕沿厚度方向完全地行進,藉此將基板分斷。 In the manufacture of electrical equipment such as flat display panels or solar cell panels, it is often necessary to break fragile substrates such as glass substrates. First, a scribe line is formed on the substrate, and then the substrate is divided along the scribe line. The scribe line can be formed by mechanically processing the substrate using a cutting tool. By sliding or rolling the cutting tool on the substrate, a groove caused by plastic deformation is formed on the substrate, and at the same time, a vertical crack is formed directly under the groove. Thereafter, the stress imparting called the fracture step is completed. By the breaking step, the crack is completely advanced in the thickness direction, thereby breaking the substrate.

將基板分斷之步驟多數情況下係於在基板形成劃線之步驟後立即進行。然而,亦提出有於形成劃線之步驟與斷裂步驟之間進行加工基板之步驟。加工基板之步驟例如係於基板上設置某些構件之步驟。 In most cases, the step of dividing the substrate is performed immediately after the step of forming the scribe line on the substrate. However, it is also proposed to process the substrate between the step of forming the scribe line and the step of breaking. The step of processing the substrate is, for example, the step of placing certain components on the substrate.

例如根據國際公開第2002/104078號之技術,於有機EL(Electroluminescence,電致發光)顯示器之製造方法中,於安裝密封蓋之前,於成為各有機EL顯示器之每一區域於玻璃基板上形成劃線。因此,可避免於設置密封蓋後在玻璃基板上形成劃線時可能成為問題之密封蓋與玻璃切割器之接觸。 For example, according to the technology of International Publication No. 2002/104078, in the manufacturing method of organic EL (Electroluminescence) displays, before the sealing cover is installed, each area that becomes each organic EL display is formed on the glass substrate. line. Therefore, it is possible to avoid contact between the sealing cover and the glass cutter, which may be a problem when the scribe line is formed on the glass substrate after the sealing cover is installed.

又,例如根據國際公開第2003/006391號之技術,於液晶表示面板之製造方法中,將2個玻璃基板於形成劃線後貼合。藉此,可利用1次斷裂步驟而將2塊脆性基板同時斷裂。 In addition, for example, according to the technology of International Publication No. 2003/006391, in the method of manufacturing a liquid crystal display panel, two glass substrates are bonded after forming a scribe line. Thereby, two brittle substrates can be simultaneously broken by one breaking step.

[先前技術文獻] [Prior Technical Literature] [專利文獻] [Patent Literature]

[專利文獻1]國際公開第2002/104078號 [Patent Document 1] International Publication No. 2002/104078

[專利文獻2]國際公開第2003/006391號 [Patent Document 2] International Publication No. 2003/006391

根據上述先前之技術,於形成劃線後對脆性基板進行加工,其後藉由應力賦予而進行斷裂步驟。上述情況意味著於對脆性基板加工時已存在垂直裂痕。可能存在如下情況,即因於加工中該垂直裂痕於厚度方向上意外地產生進一步之伸展,而將於加工中應為一體之脆性基板分離。又,即便於在劃線之形成步驟與基板之斷裂步驟之間不進行基板之加工步驟之情形時,通常於劃線之形成步驟後且基板之斷裂步驟前亦必須進行基板之搬送或保管,此時可能存在基板意外地分斷之情況。 According to the above-mentioned prior art, the brittle substrate is processed after the scribe line is formed, and then the fracture step is performed by applying stress. The above situation means that there are vertical cracks in the processing of brittle substrates. There may be situations in which the vertical cracks unexpectedly expand further in the thickness direction during processing, and the brittle substrates that should be integrated during processing are separated. Moreover, even when the substrate processing step is not performed between the scribing formation step and the substrate breaking step, it is usually necessary to carry or store the substrate after the scribing formation step and before the substrate breaking step. At this time, the substrate may be accidentally broken.

為了解決上述問題,本發明者開發有獨自之分斷技術。根據該技術,作為規定分斷脆性基板之位置之線,首先,形成不於其正下方具有裂痕之溝槽線。藉由形成溝槽線而規定將脆性基板分斷之位置。其後,只要維持於溝槽線之正下方不存在裂痕之狀態(以下亦稱為「無裂痕狀態」),則不容易產生沿著溝槽線之分斷。藉由使用該狀態,可一面預先規定將脆性基板分斷之位置,一面防止於應分斷之時點之前意外地將脆性基板分斷。然而,於維持無裂痕狀態後形成裂痕線之情形時,相對較容易產生裂痕線之形成不良。因此,尋求一種容易地判別裂痕線之形成不良之有無的方法。 In order to solve the above-mentioned problems, the inventors developed a unique breaking technology. According to this technology, as a line that defines the position for breaking the brittle substrate, first, a groove line that does not have a crack directly under it is formed. The location of the brittle substrate is defined by forming the groove line. After that, as long as the state where there are no cracks directly under the groove line (hereinafter also referred to as the "crack-free state") is maintained, it is not easy to break along the groove line. By using this state, it is possible to predetermine the position of the brittle substrate to be broken, and to prevent the brittle substrate from being accidentally broken before the time when it should be broken. However, when a crack line is formed after maintaining a crack-free state, it is relatively easy to produce defective crack line formation. Therefore, a method is sought to easily determine the presence or absence of defective crack lines.

又,即便於藉由不伴隨無裂痕狀態之通常之方法而形成劃線之情形時,亦可尋求一種容易地判別裂痕線之形成不良之有無的方法。例如,於藉由切割器具之滾動而形成劃線之情形時,裂痕線之深度方 向上之延伸之垂直性容易雜亂。其結果,可能存在對沿著裂痕線之斷裂步驟產生妨礙之情況。 In addition, even in the case where the scribe line is formed by a normal method that does not accompany the non-crack state, a method can be sought to easily determine the presence or absence of the formation of the crack line. For example, when the scribe line is formed by the rolling of the cutting tool, the depth of the crack line The verticality of the upward extension is easily messy. As a result, there may be situations that hinder the breaking step along the crack line.

本發明係為了解決如上問題而完成者,其目的在於提供一種可判別是否適當地形成有裂痕線之劃線之檢查方法。 The present invention was completed in order to solve the above problems, and its object is to provide an inspection method that can determine whether a scribe line with a crack line is properly formed.

本發明之劃線之檢查方法係如下劃線之檢查方法,且具有如下步驟,該劃線具有溝槽線、及於溝槽線之正下方沿著溝槽線延伸之裂痕線。準備具有第1面及與第1面為相反之第2面之脆性基板。於第1面上設置有劃線,該劃線具有於第1面上之一位置沿延伸方向延伸之溝槽線。將藉由雷射產生之入射光自脆性基板之外部經由第1面向脆性基板之第1面之一位置之正下方照射。入射光之光軸方向具有傾斜成分,該傾斜成分係以垂直於第1面之方向為基準時,朝向在第1面上與延伸方向垂直之方向。藉由裂痕線反射入射光而產生朝向第2面之反射光。藉由將反射光反射而產生自第2面經由第1面朝向脆性基板之外之出射光。測定出射光之強度。 The scribing inspection method of the present invention is an underscribing inspection method and has the following steps. The scribing line has a groove line and a crack line extending along the groove line directly under the groove line. Prepare a brittle substrate having a first surface and a second surface opposite to the first surface. A scribe line is provided on the first surface, and the scribe line has a groove line extending along the extending direction at a position on the first surface. The incident light generated by the laser is irradiated from the outside of the brittle substrate through the first surface directly below a position of the first surface of the brittle substrate. The optical axis direction of the incident light has an oblique component, and the oblique component is oriented in a direction perpendicular to the extending direction on the first surface when the direction perpendicular to the first surface is used as a reference. The incident light is reflected by the crack line to generate the reflected light toward the second surface. The reflected light is reflected to generate outgoing light from the second surface to the outside of the brittle substrate through the first surface. Measure the intensity of the emitted light.

根據本發明,出射光之強度依存於是否適當地形成有裂痕線。因此,藉由測定出射光之強度,可判別是否適當地形成有裂痕線。 According to the present invention, the intensity of the emitted light depends on whether the crack line is properly formed. Therefore, by measuring the intensity of the emitted light, it can be determined whether the crack line is properly formed.

4‧‧‧玻璃基板 4‧‧‧Glass substrate

10‧‧‧反射構件 10‧‧‧Reflective member

11‧‧‧基板按壓裝置 11‧‧‧Substrate pressing device

12‧‧‧平台 12‧‧‧Platform

20‧‧‧雷射頭 20‧‧‧Laser head

21‧‧‧光源 21‧‧‧Light source

22‧‧‧感測器 22‧‧‧Sensor

28‧‧‧頭位置調整部 28‧‧‧Head position adjustment part

29‧‧‧放大器 29‧‧‧Amplifier

40‧‧‧檢查裝置 40‧‧‧Checking device

50‧‧‧切割器具 50‧‧‧Cutting equipment

51‧‧‧刀尖 51‧‧‧tip

52‧‧‧柄 52‧‧‧Handle

A1‧‧‧箭頭 A1‧‧‧Arrow

A2‧‧‧箭頭 A2‧‧‧Arrow

A3‧‧‧箭頭 A3‧‧‧Arrow

AL‧‧‧輔助線 AL‧‧‧Auxiliary Line

AX‧‧‧軸向 AX‧‧‧axial

CA、CL‧‧‧裂痕線 CA, CL‧‧‧Crack line

DA‧‧‧方向 DA‧‧‧direction

DB‧‧‧方向 DB‧‧‧direction

DC‧‧‧方向 DC‧‧‧direction

DT‧‧‧厚度方向 DT‧‧‧Thickness direction

ED1‧‧‧邊 ED1‧‧‧edge

ED2‧‧‧邊 ED2‧‧‧edge

LI‧‧‧入射光 LI‧‧‧ incident light

LO‧‧‧出射光 LO‧‧‧Outgoing light

LR‧‧‧反射光 LR‧‧‧reflected light

LT‧‧‧透過光 LT‧‧‧Transmitted light

N1‧‧‧位置 N1‧‧‧Location

N2‧‧‧位置 N2‧‧‧Location

N3‧‧‧位置 N3‧‧‧Location

PP‧‧‧突起部 PP‧‧‧Protrusion

PS‧‧‧側部 PS‧‧‧Side

SA、SL‧‧‧劃線 SA, SL‧‧‧underline

SC‧‧‧掃描方向 SC‧‧‧Scan direction

SD1‧‧‧頂面 SD1‧‧‧Top surface

SD2‧‧‧側面 SD2‧‧‧Side

SD3‧‧‧側面 SD3‧‧‧Side

SF1‧‧‧上表面(第1面) SF1‧‧‧Upper surface (1st side)

SF2‧‧‧下表面(第2面) SF2‧‧‧Bottom surface (Second side)

SP‧‧‧光點 SP‧‧‧Spot

TL‧‧‧溝槽線 TL‧‧‧Trench line

XVI‧‧‧箭頭 XVI‧‧‧Arrow

圖1係概略性地表示本發明之實施形態1中之劃線之檢查方法之構成的流程圖。 Fig. 1 is a flowchart schematically showing the structure of the marking inspection method in the first embodiment of the present invention.

圖2係概略性地表示本發明之實施形態1中之劃線之檢查方法之一步驟的俯視圖。 Fig. 2 is a plan view schematically showing one step of the marking inspection method in the first embodiment of the present invention.

圖3係概略性地表示包含正常之裂痕線之劃線之構成的局部剖面圖。 Fig. 3 is a partial cross-sectional view schematically showing the structure of the scribe line including the normal crack line.

圖4係概略性地表示包含垂直性雜亂之裂痕線之劃線之構成的局 部剖面圖。 Figure 4 schematically shows the structure of the scribe line including the vertical chaotic crack line Sectional view.

圖5係概略性地表示不具備裂痕線之劃線之構成的局部剖面圖。 Fig. 5 is a partial cross-sectional view schematically showing the structure of a scribe line without a crack line.

圖6係概略性地表示用於本發明之實施形態1中之劃線之檢查方法之檢查裝置之構成的剖視圖。 Fig. 6 is a cross-sectional view schematically showing the structure of an inspection device used in the inspection method of marking in the first embodiment of the present invention.

圖7係概略性地表示本發明之實施形態1中之劃線之檢查方法之一步驟的剖視圖。 Fig. 7 is a cross-sectional view schematically showing one step of the marking inspection method in the first embodiment of the present invention.

圖8係概略性地表示圖7之步驟之俯視圖。 Fig. 8 is a plan view schematically showing the steps of Fig. 7.

圖9係概略性地表示本發明之實施形態1中之劃線之檢查方法之一步驟的剖視圖。 Fig. 9 is a cross-sectional view schematically showing one step of the marking inspection method in the first embodiment of the present invention.

圖10係概略性地表示圖9之步驟之俯視圖。 Fig. 10 is a plan view schematically showing the steps of Fig. 9.

圖11係概略性地表示對正常之劃線進行本發明之實施形態1中之劃線之檢查方法之情形時的光之行進之局部剖視圖。 FIG. 11 is a partial cross-sectional view schematically showing the progress of light when performing the inspection method of the marking in Embodiment 1 of the present invention on a normal marking.

圖12係概略性地表示對具有垂直性雜亂之裂痕線之劃線進行本發明之實施形態1中之劃線之檢查方法之情形時的光之行進之局部剖視圖。 FIG. 12 is a partial cross-sectional view schematically showing the progress of light when performing the inspection method of the scribe line in the first embodiment of the present invention on a scribe line with a vertical disordered crack line.

圖13係概略性地表示對不具備裂痕線之劃線進行本發明之實施形態1中之劃線之檢查方法之情形時的光之行進之局部剖視圖。 FIG. 13 is a partial cross-sectional view schematically showing the progress of light when performing the inspection method of the scribe line in the first embodiment of the present invention on a scribe line without a crack line.

圖14係概略性地表示本發明之實施形態2中之劃線之形成方法之構成的流程圖。 Fig. 14 is a flowchart schematically showing the structure of a method for forming a scribe line in the second embodiment of the present invention.

圖15係概略性地表示用於本發明之實施形態2中之脆性基板之分斷方法之器具之構成的側視圖。 Fig. 15 is a side view schematically showing the structure of a device used in the method of breaking a brittle substrate in the second embodiment of the present invention.

圖16係圖15之箭頭XVI之視點下的概略俯視圖。 Fig. 16 is a schematic plan view from the point of view of arrow XVI in Fig. 15.

圖17係概略性地表示本發明之實施形態2中之溝槽線之形成步驟的俯視圖。 Fig. 17 is a plan view schematically showing a step of forming a groove line in the second embodiment of the present invention.

圖18係概略性地表示本發明之實施形態2中之裂痕線之形成步驟的俯視圖。 Fig. 18 is a plan view schematically showing the steps of forming a crack line in the second embodiment of the present invention.

以下,基於圖式對本發明之實施形態進行說明。再者,於以下圖式中,對相同或相當之部分標註相同參照編號,不重複其說明。 Hereinafter, an embodiment of the present invention will be described based on the drawings. Furthermore, in the following drawings, the same or equivalent parts are denoted with the same reference numbers, and the description is not repeated.

(實施形態1) (Embodiment 1)

於本實施形態中,對藉由不伴隨無裂痕狀態之通常之方法形成劃線的情形進行說明。 In this embodiment, a case where the scribe line is formed by a normal method that does not involve a crack-free state will be described.

圖1係概略性地表示本實施形態中之劃線之檢查方法之構成的流程圖。以下,一面參照圖1,一面對劃線之檢查方法進行說明。 Fig. 1 is a flowchart schematically showing the structure of the marking inspection method in this embodiment. Hereinafter, referring to FIG. 1, the inspection method of marking will be described.

參照圖2及圖3,首先,準備具有平坦之上表面SF1(第1面)、及平坦之下表面SF2(與第1面為相反之第2面)之玻璃基板4(脆性基板)(圖1:步驟S10)。於上表面SF1上設置有劃線SL。 2 and 3, first, prepare a glass substrate 4 (brittle substrate) having a flat upper surface SF1 (first surface) and a flat lower surface SF2 (second surface opposite to the first surface) (Figure 1: Step S10). A scribe line SL is provided on the upper surface SF1.

劃線SL具有溝槽線TL、及於溝槽線TL之正下方沿著溝槽線TL延伸之裂痕線CL。溝槽線TL沿延伸方向(圖2中之橫向)延伸。再者,溝槽線TL典型而言為直線狀,但亦可形成曲線狀之溝槽線,於此情形時,溝槽線於上表面SF1上之至少一位置沿一延伸方向延伸。裂痕線CL係自溝槽線TL之凹處沿與上表面SF1垂直之厚度方向DT向玻璃基板4中伸展之裂痕。 The scribing line SL has a trench line TL and a crack line CL extending along the trench line TL directly below the trench line TL. The trench line TL extends along the extension direction (lateral direction in FIG. 2). Furthermore, the groove line TL is typically linear, but a curved groove line may also be formed. In this case, at least one position of the groove line on the upper surface SF1 extends along an extension direction. The crack line CL is a crack extending from the recess of the groove line TL into the glass substrate 4 along the thickness direction DT perpendicular to the upper surface SF1.

玻璃基板4因裂痕線CL而於溝槽線TL之正下方,在與溝槽線TL之延伸方向交叉之方向DC(圖3)上隔斷連續之連接。換言之,此處所謂「連續之連接」係不被裂痕隔斷之連接。再者,於如上所述般隔斷連續之連接之狀態下,亦可為玻璃基板4之部分彼此經由裂痕線CL之裂痕而接觸。 The glass substrate 4 is directly below the trench line TL due to the crack line CL, and cuts off the continuous connection in the direction DC (FIG. 3) intersecting the extending direction of the trench line TL. In other words, the so-called "continuous connection" here is a connection that is not interrupted by a crack. Furthermore, in the state where the continuous connection is cut off as described above, the parts of the glass substrate 4 may be in contact with each other through the crack of the crack line CL.

於本實施形態中,劃線SL可藉由通常之刻劃方法而形成。具體而言,藉由鑽石切割器等切割器具於玻璃基板4之上表面SF1上滑動或滾動,而於玻璃基板4上形成由塑性變形所致之溝槽,與此同時,於該溝槽之正下方形成垂直裂痕。 In this embodiment, the scribing line SL can be formed by a normal scribing method. Specifically, a cutting tool such as a diamond cutter is used to slide or roll on the upper surface SF1 of the glass substrate 4 to form a groove caused by plastic deformation on the glass substrate 4. At the same time, a groove is formed in the groove A vertical crack formed directly below.

視情形,可能存在因某些原因而未於上表面SF1上形成具有正常之裂痕線CL之劃線SL(圖3)之情形。具體而言,可能存在如圖4所示般形成具有垂直性雜亂(彎曲或傾斜)之裂痕線CA之劃線SA之情況。或者,可能存在如圖5所示般劃線不具備裂痕線CL(圖3)之情況。因此,進行用以判別是否適當地形成有劃線SL之檢查。 Depending on the situation, there may be cases where the scribe line SL (FIG. 3) with the normal crack line CL is not formed on the upper surface SF1 due to some reasons. Specifically, there may be a case where a scribe line SA with a vertical disorder (curved or inclined) crack line CA is formed as shown in FIG. 4. Or, there may be cases where the scribe line does not have the crack line CL (FIG. 3) as shown in FIG. 5. Therefore, an inspection is performed to determine whether the scribe line SL is properly formed.

參照圖6,以上述檢查為目的而準備檢查裝置40。檢查裝置40具有反射構件10、基板按壓裝置11、平台12、雷射頭20、頭位置調整部28、及放大器29。雷射頭20具有光源21及感測器22。 6, an inspection device 40 is prepared for the purpose of the above inspection. The inspection device 40 includes a reflection member 10, a substrate pressing device 11, a stage 12, a laser head 20, a head position adjustment unit 28, and an amplifier 29. The laser head 20 has a light source 21 and a sensor 22.

平台12係介隔反射構件10支持玻璃基板4者。又,平台12係使玻璃基板4移位者,例如係如圖中箭頭A1及A2分別所示般調整玻璃基板4之水平位置及傾斜角者。基板按壓裝置11係將玻璃基板4向平台12上壓抵者。藉由利用基板按壓裝置11壓抵而可矯正玻璃基板4之撓曲。藉此,使玻璃基板4及反射構件10相互更密接。因此,難以於兩者之間形成間隙。 The platform 12 supports the glass substrate 4 through the reflective member 10. In addition, the platform 12 is one that displaces the glass substrate 4, for example, one that adjusts the horizontal position and the inclination angle of the glass substrate 4 as shown by arrows A1 and A2 in the figure, respectively. The substrate pressing device 11 presses the glass substrate 4 onto the platform 12. The deflection of the glass substrate 4 can be corrected by pressing against the substrate pressing device 11. Thereby, the glass substrate 4 and the reflective member 10 are brought into closer contact with each other. Therefore, it is difficult to form a gap between the two.

光源21係放射藉由雷射產生之光作為向檢查對象即玻璃基板4之入射光LI者。雷射之波長係以使入射光LI容易透過玻璃基板4之方式選擇。於如本實施形態般檢查對象為玻璃基板4之情形時,例如可使用可見光區域之波長。感測器22係檢測來自玻璃基板4之出射光LO者。藉由放大器29對利用感測器22檢測出之信號進行處理,藉此測定出射光LO之強度。頭位置調整部28係使雷射頭20移位者,例如係如圖中箭頭A3所示般調整與玻璃基板4之厚度方向平行之高度位置者。藉由使雷射頭20移位,而使該雷射頭所具有之光源21及感測器22一併移動。 The light source 21 emits light generated by laser as incident light LI to the glass substrate 4 which is the inspection object. The wavelength of the laser is selected so that the incident light LI can easily pass through the glass substrate 4. In the case where the inspection object is the glass substrate 4 as in this embodiment, for example, a wavelength in the visible light region can be used. The sensor 22 detects the light LO emitted from the glass substrate 4. The signal detected by the sensor 22 is processed by the amplifier 29 to measure the intensity of the emitted light LO. The head position adjustment part 28 is a device that displaces the laser head 20, for example, it is a device that adjusts the height position parallel to the thickness direction of the glass substrate 4 as shown by the arrow A3 in the figure. By displacing the laser head 20, the light source 21 and the sensor 22 of the laser head are moved together.

反射構件10具有可有效率地反射來自光源21之雷射光之表面。因此,反射構件10之表面較佳為具有平坦之形狀、及於上述雷射光之波長區域之較高之反射率。於使用可見光區域之雷射光之情形時,作 為反射構件10,例如可使用具有研磨面之矽晶圓。 The reflective member 10 has a surface that can efficiently reflect the laser light from the light source 21. Therefore, the surface of the reflective member 10 preferably has a flat shape and a high reflectivity in the wavelength region of the above-mentioned laser light. When using laser light in the visible light region, do For the reflective member 10, for example, a silicon wafer with a polished surface can be used.

圖7及圖9係表示使用檢查裝置40(圖6)之檢查之情況的剖視圖。圖8及圖10分別為概略性地表示圖7及圖9之步驟之俯視圖。再者,於圖8及圖10中例示有5條劃線SL,但於圖7及圖9中,為了簡化而僅圖示有其中1條。 7 and 9 are cross-sectional views showing the state of inspection using the inspection device 40 (FIG. 6). Figures 8 and 10 are top views schematically showing the steps of Figures 7 and 9 respectively. In addition, in FIG. 8 and FIG. 10, five scribe lines SL are illustrated, but in FIG. 7 and FIG. 9, only one of them is illustrated for simplicity.

參照圖7,首先,將玻璃基板4之下表面SF2載置於反射構件10上。繼而,藉由基板按壓裝置11而將玻璃基板4介隔反射構件10壓抵於平台12。自光源21放射向玻璃基板4之入射光LI。藉此,局部地將入射光LI之光點SP(圖7及圖8)照射至玻璃基板4之上表面SF1上。入射光LI之光軸方向具有傾斜成分,該傾斜成分係以垂直於上表面SF1之方向(圖7中之縱向)為基準時,朝向在上表面SF1上與溝槽線TL之延伸方向(圖7中之與紙面垂直之方向)垂直之方向(圖7中之橫向)。較佳為,入射光LI之光軸方向係以垂直於上表面SF1之方向(圖7中之縱向)為基準而朝向上表面SF1上與溝槽線TL之延伸方向(圖7中之與紙面垂直之方向)垂直之方向(圖7中之橫向)傾斜。 Referring to FIG. 7, first, the lower surface SF2 of the glass substrate 4 is placed on the reflective member 10. Then, the glass substrate 4 is pressed against the platform 12 via the reflective member 10 by the substrate pressing device 11. The incident light LI radiated from the light source 21 to the glass substrate 4. Thereby, the spot SP (FIGS. 7 and 8) of the incident light LI is partially irradiated onto the upper surface SF1 of the glass substrate 4. The direction of the optical axis of the incident light LI has an oblique component, and the oblique component is based on the direction perpendicular to the upper surface SF1 (the longitudinal direction in FIG. 7), and faces the extending direction of the groove line TL on the upper surface SF1 (FIG. 7 in the direction perpendicular to the paper surface) perpendicular to the direction (lateral in Figure 7). Preferably, the direction of the optical axis of the incident light LI is based on the direction perpendicular to the upper surface SF1 (longitudinal direction in FIG. 7) and faces the extending direction of the groove line TL on the upper surface SF1 (in FIG. 7 and the paper surface). The vertical direction) is inclined in the vertical direction (lateral direction in Figure 7).

沿著與溝槽線TL交叉之方向(圖9中之橫向、圖10中之掃描方向SC),利用入射光LI之光點SP掃描上表面SF1。藉此,將入射光LI自玻璃基板4之外部經由上表面SF1向上表面SF1之溝槽線TL沿延伸方向延伸的一位置之正下方照射(圖1:步驟S20)。對於藉由而產生之現象,以下分成3種情形進行說明。 The upper surface SF1 is scanned with the spot SP of the incident light LI along the direction intersecting the groove line TL (the lateral direction in FIG. 9 and the scanning direction SC in FIG. 10). Thereby, the incident light LI is irradiated from the outside of the glass substrate 4 through the upper surface SF1 to the upper surface SF1 and the groove line TL of the upper surface SF1 extends directly below a position in the extending direction (FIG. 1: step S20). For the phenomenon caused by this, the following is divided into three situations to explain.

參照圖11,第1:於在上表面SF1形成有大致垂直之正常之裂痕線CL的情形時,藉由裂痕線CL反射入射光LI,而產生朝向下表面SF2之反射光LR。再者,入射光LI之一部分亦可作為透過光LT透過裂痕線CL。配置於下表面SF2之反射構件10將反射光LR反射,藉此產生自下表面SF2經由上表面SF1朝向玻璃基板4之外之出射光LO(圖1:步驟S30)。藉由感測器22(圖9)檢測出射光LO,藉此測定出射光LO之強度 (圖1:步驟S40)。藉由裂痕線CL之存在而該強度成為充分高者。 Referring to FIG. 11, first: when a substantially vertical normal crack line CL is formed on the upper surface SF1, the incident light LI is reflected by the crack line CL to generate the reflected light LR toward the lower surface SF2. Furthermore, a part of the incident light LI can also be used as the transmitted light LT to pass through the crack line CL. The reflective member 10 disposed on the lower surface SF2 reflects the reflected light LR, thereby generating the outgoing light LO from the lower surface SF2 to the outside of the glass substrate 4 through the upper surface SF1 (FIG. 1: step S30). The sensor 22 (FIG. 9) detects the emitted light LO, thereby measuring the intensity of the emitted light LO (Figure 1: Step S40). The strength is sufficiently high due to the existence of the crack line CL.

參照圖12,第2:於形成有垂直性雜亂(彎曲)之裂痕線CA之情形時,裂痕線CA使入射光LI擴散,故而無法獲得如圖11之情形般之充分高之反射光LR。其結果,所測定之出射光LO之強度小於形成有裂痕線CL(圖11)之情形。同樣地,於形成有傾斜之裂痕線之情形時,產生與形成有正常之裂痕線CL之情形相比反射角度不同之反射光。於此情形時,出射光不被以接收正常之裂痕線CL之反射光之方式設定之感測器22接收,從而所測定之出射光LO之強度小於形成有裂痕線CL(圖11)之情形。 Referring to FIG. 12, No. 2: In the case of forming a vertical chaotic (curved) crack line CA, the crack line CA diffuses the incident light LI, so it is impossible to obtain a sufficiently high reflected light LR as in the case of FIG. As a result, the measured intensity of the emitted light LO is smaller than the case where the crack line CL (Figure 11) is formed. Similarly, when an inclined crack line is formed, reflected light with a different reflection angle is generated compared to the case where a normal crack line CL is formed. In this case, the emitted light is not received by the sensor 22 that is set to receive the reflected light of the normal crack line CL, so the measured intensity of the emitted light LO is less than the case where the crack line CL is formed (Figure 11) .

參照圖13,第3:於在溝槽線TL之正下方不具備裂痕線CL之情形時,不產生反射光LR(圖11)。其結果,所測定之出射光LO之強度實質上成為零。 Referring to FIG. 13, third: when there is no crack line CL directly under the trench line TL, no reflected light LR is generated (FIG. 11). As a result, the measured intensity of the emitted light LO becomes substantially zero.

根據本實施形態,參照圖11~圖13,如上所述般,自反射光LR獲得之出射光LO之強度依存於是否適當地形成有產生反射光LR之裂痕線CL(圖11)。因此,藉由測定出射光LO之強度,可判別是否適當地形成有裂痕線CL。藉此,可管理裂痕線CL之形成步驟。藉由形成適當之裂痕線CL,可提高其後進行之沿著裂痕線CL之玻璃基板4之分斷、即斷裂步驟的良率。 According to this embodiment, referring to FIGS. 11 to 13, as described above, the intensity of the emitted light LO obtained from the reflected light LR depends on whether the crack line CL that generates the reflected light LR is appropriately formed (FIG. 11 ). Therefore, by measuring the intensity of the emitted light LO, it can be determined whether the crack line CL is properly formed. Thereby, the formation steps of the crack line CL can be managed. By forming an appropriate crack line CL, the subsequent breaking of the glass substrate 4 along the crack line CL, that is, the yield of the breaking step can be improved.

照射入射光LI之步驟可藉由沿著與劃線SL交叉之方向利用入射光LI之光點SP(圖10)掃描上表面SF1而進行。藉此,可將入射光LI確實地向位於溝槽線TL之正下方之裂痕線CL入射。 The step of irradiating the incident light LI can be performed by scanning the upper surface SF1 with the spot SP (FIG. 10) of the incident light LI along the direction crossing the scribe line SL. Thereby, the incident light LI can be reliably incident on the crack line CL located directly below the trench line TL.

雷射頭20中所包含之光源21及感測器22(圖6)可藉由雷射頭20之移動而一併移動。於此情形時,保持入射光LI之產生位置與出射光LO之觀測位置之相對關係。因此,可於光學測定系統中容易地維持特定光之路徑。因此,可容易地進行穩定之測定。 The light source 21 and the sensor 22 (FIG. 6) included in the laser head 20 can be moved together by the movement of the laser head 20. In this case, the relative relationship between the generation position of the incident light LI and the observation position of the outgoing light LO is maintained. Therefore, the path of the specific light can be easily maintained in the optical measurement system. Therefore, stable measurement can be easily performed.

再者,亦可代替基板按壓裝置11(圖6),藉由其他機構而將玻璃 基板4固定。例如,亦可使用真空吸附或膠帶。又,只要光路之雜亂不成為問題,則亦可於玻璃基板4與反射構件10之間設置間隔。又,雷射頭20及平台12之移位係用以調整兩者之間之相對位置而進行者。因此,可使雷射頭20及平台12之一者之移位的一部分或全部藉由另一者之移位代替。 Furthermore, instead of the substrate pressing device 11 (Figure 6), the glass can be The substrate 4 is fixed. For example, vacuum suction or tape can also be used. Moreover, as long as the clutter of the optical path does not become a problem, a space may be provided between the glass substrate 4 and the reflection member 10. In addition, the displacement of the laser head 20 and the platform 12 is performed to adjust the relative position between the two. Therefore, part or all of the displacement of one of the laser head 20 and the platform 12 can be replaced by the displacement of the other.

(實施形態2) (Embodiment 2)

於本實施形態中,對準備具有劃線SL(圖3)之玻璃基板4之步驟(圖1:步驟S10)包含伴隨無裂痕狀態之步驟(圖14)之情形進行說明。 In this embodiment, the case where the step (FIG. 1: step S10) of preparing the glass substrate 4 with the scribe line SL (FIG. 3) includes the step (FIG. 14) accompanied by a crack-free state will be described.

參照圖15及圖16,首先,對用以形成無裂痕狀態之溝槽線TL(圖5)(圖14:步驟S11)之切割器具50進行說明。切割器具50具有刀尖51及柄52。 15 and 16, first, the cutting tool 50 used to form the groove line TL (FIG. 5) (FIG. 14: step S11) in a crack-free state will be described. The cutting tool 50 has a blade tip 51 and a handle 52.

刀尖51藉由固定於該作為固持器之柄52而被保持。於刀尖51設置有頂面SD1、及包圍頂面SD1之複數個面。該等複數個面包含側面SD2及側面SD3。頂面SD1、側面SD2及SD3相互朝向不同之方向,並且相互相鄰。刀尖51具有頂面SD1、側面SD2及SD3合流之頂點,藉由該頂點而構成刀尖51之突起部PP。又,側面SD2及SD3形成構成刀尖51之側部PS之稜線。側部PS自突起部PP呈線狀地延伸。又,側部PS由於如上所述般為稜線,故而具有呈線狀地延伸之凸形狀。刀尖51較佳為鑽石頭。即,就能夠減小硬度及表面粗糙度之方面而言,刀尖51較佳為由鑽石製作。刀尖51更佳為由單晶鑽石製作。就結晶學而言,進而較佳為,頂面SD1為{001}面,側面SD2及SD3分別為{111}面。於此情形時,側面SD2及SD3雖具有不同之朝向,但於結晶學上係相互等價之結晶面。再者,亦可使用並非為單晶之鑽石,例如亦可使用藉由CVD(Chemical Vapor Deposition,化學氣相沈積)法合成之多晶體鑽石。或者,亦可使用使多晶體鑽石粒子藉由鐵族元素等結合材料結合而成之燒結鑽石,該多晶體鑽石粒子係自微粒之石墨或非石墨 狀碳不具有鐵族元素等結合材料地進行燒結而成。 The tip 51 is held by being fixed to the handle 52 as a holder. The tip 51 is provided with a top surface SD1 and a plurality of surfaces surrounding the top surface SD1. These plural faces include side SD2 and side SD3. The top surface SD1, the side surfaces SD2 and SD3 face different directions and are adjacent to each other. The blade edge 51 has an apex where the top surface SD1, the side surfaces SD2, and SD3 converge, and this apex forms the protrusion PP of the blade edge 51. In addition, the side surfaces SD2 and SD3 form the ridgeline of the side PS of the blade edge 51. The side portion PS extends linearly from the protrusion PP. In addition, since the side portion PS is a ridgeline as described above, it has a convex shape extending linearly. The tip 51 is preferably a diamond tip. That is, in terms of reducing the hardness and surface roughness, the tip 51 is preferably made of diamond. The tip 51 is more preferably made of single crystal diamond. In terms of crystallography, it is more preferable that the top surface SD1 is a {001} plane, and the side surfaces SD2 and SD3 are respectively {111} planes. In this case, although the side faces SD2 and SD3 have different orientations, they are crystallographically equivalent crystal faces. Furthermore, diamonds that are not single crystals can also be used. For example, polycrystalline diamonds synthesized by CVD (Chemical Vapor Deposition) method can also be used. Alternatively, sintered diamond formed by combining polycrystalline diamond particles with iron group elements and other bonding materials can also be used. The polycrystalline diamond particles are made of fine particles of graphite or non-graphite Shaped carbon is sintered without binding materials such as iron group elements.

柄52沿著軸向AX延伸。刀尖51較佳為以頂面SD1之法線方向大致沿著軸向AX之方式安裝於柄52。 The shank 52 extends along the axial direction AX. The tip 51 is preferably installed on the shank 52 in such a way that the normal direction of the top surface SD1 is substantially along the axial direction AX.

其次,以下對使用切割器具50之溝槽線TL之形成(圖14:步驟S11)進行說明。 Next, the formation of the groove line TL using the cutting tool 50 (FIG. 14: Step S11) will be described below.

參照圖17,首先準備供形成溝槽線TL之玻璃基板4。玻璃基板4具有平坦之上表面SF1。包圍上表面SF1之緣包含相互對向之邊ED1及邊ED2。於圖17所示之例中,緣為長方形狀。因此,邊ED1及ED2為相互平行之邊。又,於圖17所示之例中,邊ED1及ED2為長方形之短邊。 Referring to FIG. 17, first, a glass substrate 4 for forming trench lines TL is prepared. The glass substrate 4 has a flat upper surface SF1. The edge surrounding the upper surface SF1 includes sides ED1 and ED2 facing each other. In the example shown in Fig. 17, the edge is rectangular. Therefore, the sides ED1 and ED2 are parallel to each other. Also, in the example shown in FIG. 17, the sides ED1 and ED2 are the short sides of the rectangle.

繼而,將刀尖51(圖15)於位置N1(圖17)壓抵於上表面SF1。位置N1之詳細情況於下文進行敍述。參照圖15,刀尖51之壓抵係以將刀尖51之突起部PP於玻璃基板4之上表面SF1上配置於邊ED1與側部PS之間之方式,並且以將刀尖51之側部PS配置於突起部PP與邊ED2之間之方式進行。 Then, the tip 51 (FIG. 15) is pressed against the upper surface SF1 at the position N1 (FIG. 17). The details of position N1 are described below. 15, the pressing of the blade tip 51 is to arrange the protrusion PP of the blade tip 51 on the upper surface SF1 of the glass substrate 4 between the side ED1 and the side PS, and to set the side of the blade tip 51 The part PS is arranged between the protrusion PP and the edge ED2.

繼而,進行切割器具50於上表面SF1上之滑動。該滑動係於位置N1與位置N3之間進行。位置N2位於位置N1與N3之間。因此,溝槽線TL形成於位置N1與N2之間、及位置N2與N3之間。位置N1及N3可如圖17所示般位於自玻璃基板4之上表面SF1之緣離開之位置,或者亦可其一者或兩者位於上表面SF1之緣。所形成之溝槽線TL於前者之情形時自玻璃基板4之緣離開,於後者之情形時與玻璃基板4之緣相接。位置N1及N2中位置N1更靠近邊ED1,又,位置N1及N2中位置N2更靠近邊ED2。再者,於圖17所示之例中,位置N1更靠近邊ED1及ED2中之邊ED1,位置N2更靠近邊ED1及ED2中之邊ED2,但亦可為位置N1及N2之兩者位於邊ED1或ED2中之任一者之附近。 Then, the cutting tool 50 slides on the upper surface SF1. This sliding is performed between the position N1 and the position N3. The position N2 is located between the positions N1 and N3. Therefore, the trench line TL is formed between the positions N1 and N2 and between the positions N2 and N3. The positions N1 and N3 may be located at positions away from the edge of the upper surface SF1 of the glass substrate 4 as shown in FIG. 17, or one or both of them may be located at the edge of the upper surface SF1. The formed trench line TL is separated from the edge of the glass substrate 4 in the former case, and is in contact with the edge of the glass substrate 4 in the latter case. The position N1 in the positions N1 and N2 is closer to the edge ED1, and the position N2 in the positions N1 and N2 is closer to the edge ED2. Furthermore, in the example shown in Figure 17, the position N1 is closer to the side ED1 of the sides ED1 and ED2, and the position N2 is closer to the side ED2 of the sides ED1 and ED2. However, both positions N1 and N2 may be located at Near either side ED1 or ED2.

於本實施形態中,使刀尖51自位置N1移位至位置N2,進而自位 置N2移位至位置N3。即,參照圖15,使刀尖51向自邊ED1朝向邊ED2之方向即方向DA移位。方向DA大致平行於將側部PS投影於上表面SF1上之方向,大致朝向將自刀尖51向柄52延伸之軸向AX投影至上表面SF1上之方向。於此情形時,刀尖51藉由柄52而於上表面SF1上被拖著滑動。即,使被壓抵之刀尖51於玻璃基板4之上表面SF1上滑動(參照圖17中之箭頭)。藉由該滑動而於玻璃基板4之上表面SF1上產生塑性變形。藉由該塑性變形,而於上表面SF1上形成具有溝槽形狀之溝槽線TL。此時,亦可略微切削玻璃基板4,但伴隨於此可能會產生破片,故而較佳為使此種切削儘量較少。 In this embodiment, the tool tip 51 is shifted from position N1 to position N2, and then self-positioned Set N2 to shift to position N3. That is, referring to FIG. 15, the cutting edge 51 is displaced in the direction DA from the side ED1 toward the side ED2. The direction DA is substantially parallel to the direction in which the side portion PS is projected on the upper surface SF1, and is substantially in the direction in which the axial direction AX extending from the tip 51 to the shank 52 is projected onto the upper surface SF1. In this situation, the tip 51 is dragged and slid on the upper surface SF1 by the handle 52. That is, the pressed blade edge 51 is slid on the upper surface SF1 of the glass substrate 4 (refer to the arrow in FIG. 17). The sliding causes plastic deformation on the upper surface SF1 of the glass substrate 4. By this plastic deformation, a groove line TL having a groove shape is formed on the upper surface SF1. At this time, the glass substrate 4 may be slightly cut, but fragments may be generated accompanying this, so it is preferable to make such cutting as little as possible.

形成溝槽線TL之上述步驟係以獲得於溝槽線TL之正下方玻璃基板4於與溝槽線TL之延伸方向交叉之方向DC(圖5)上連續地連接之狀態即無裂痕狀態的方式進行。於無裂痕狀態下,雖形成由塑性變形所致之溝槽線TL,但未形成沿著該溝槽線TL之裂痕。因此,即便如先前之斷裂步驟般對玻璃基板4單純施加使產生彎曲力矩等之外力,亦不容易產生沿著溝槽線TL之分斷。因此,於無裂痕狀態下不進行沿著溝槽線TL之分斷步驟。為了獲得無裂痕狀態,使施加於刀尖51之荷重小至不產生裂痕之程度,且大至產生塑性變形之程度。 The above-mentioned steps of forming the trench line TL are to obtain a state in which the glass substrate 4 directly below the trench line TL is continuously connected in the direction DC (FIG. 5) intersecting the extending direction of the trench line TL, that is, a state without cracks. Way to proceed. In the non-cracked state, although the groove line TL caused by plastic deformation is formed, no crack along the groove line TL is formed. Therefore, even if an external force such as a bending moment is simply applied to the glass substrate 4 as in the previous breaking step, it is not easy to break along the groove line TL. Therefore, the cutting step along the trench line TL is not performed in a crack-free state. In order to obtain a crack-free state, the load applied to the blade tip 51 is small to the extent that no cracks are generated, and to the extent that plastic deformation occurs.

將無裂痕狀態維持必需之時間(圖14:步驟S12)。為了維持無裂痕狀態,只要避免如於溝槽線TL對玻璃基板4施加過度之應力般之操作,例如避免於基板產生破損之較大之外部應力之施加或伴隨著較大之溫度變化之加熱即可。於維持無裂痕狀態期間,可搬送玻璃基板4,又,亦可對玻璃基板4進行加工。 The crack-free state is maintained for the necessary time (FIG. 14: Step S12). In order to maintain a crack-free state, it is only necessary to avoid operations such as applying excessive stress to the glass substrate 4 in the trench line TL, such as avoiding the application of large external stress that causes damage to the substrate or heating accompanied by large temperature changes OK. While maintaining the crack-free state, the glass substrate 4 can be transported, and the glass substrate 4 can also be processed.

參照圖18,於維持無裂痕狀態後,換言之,自形成溝槽線TL後隔開時間差,使厚度方向DT(圖3)上之玻璃基板4之裂痕沿著溝槽線TL伸展。具體而言,沿著溝槽線TL自位置N2朝向位置N1之方向(圖中參照虛線箭頭),使厚度方向DT上之玻璃基板4之裂痕伸展。藉 此,形成沿著溝槽線TL延伸之裂痕線CL(圖14:步驟S13)。裂痕線CL之形成藉由輔助線AL及溝槽線TL於位置N2相互交叉而開始。為了該目的,於形成溝槽線TL後形成輔助線AL。輔助線AL係伴隨著厚度方向DT上之裂痕之通常之劃線,且係消除溝槽線TL附近之內部應力之撓曲者。輔助線AL之形成方法並無特別限定,亦可如圖18所示般,將上表面SF1之緣作為基點而形成。 Referring to FIG. 18, after maintaining the crack-free state, in other words, after the trench line TL is formed, the cracks of the glass substrate 4 in the thickness direction DT (FIG. 3) are extended along the trench line TL with a time difference. Specifically, along the groove line TL from the position N2 to the direction N1 (refer to the dotted arrow in the figure), the crack of the glass substrate 4 in the thickness direction DT is extended. borrow Thus, a crack line CL extending along the trench line TL is formed (FIG. 14: Step S13). The formation of the crack line CL starts when the auxiliary line AL and the groove line TL cross each other at the position N2. For this purpose, the auxiliary line AL is formed after the trench line TL is formed. The auxiliary line AL is a normal scribe line accompanied by a crack in the thickness direction DT, and is a deflection that eliminates internal stress near the groove line TL. The method of forming the auxiliary line AL is not particularly limited, and as shown in FIG. 18, it may be formed using the edge of the upper surface SF1 as a base point.

再者,與自位置N2向位置N1之方向相比,於自位置N2向位置N3之方向更難以形成裂痕線CL。即,裂痕線CL之伸展之容易度存在方向依存性。因此,會產生裂痕線CL形成於位置N1與N2之間而不形成於位置N2與N3之間之現象。本實施形態以沿著位置N1與N2間之玻璃基板4之分斷為目的,不以沿著位置N2與N3間之玻璃基板4之分離為目的。因此,必須於位置N1與N2間形成裂痕線CL,另一方面於位置N2與N3間難以形成裂痕線CL不會成為問題。 Furthermore, it is more difficult to form the crack line CL in the direction from the position N2 to the position N3 than in the direction from the position N2 to the position N1. That is, the ease of extension of the crack line CL is direction-dependent. Therefore, the crack line CL is formed between the positions N1 and N2 but not between the positions N2 and N3. This embodiment aims at the separation along the glass substrate 4 between the positions N1 and N2, and does not aim at the separation along the glass substrate 4 between the positions N2 and N3. Therefore, it is necessary to form a crack line CL between the positions N1 and N2. On the other hand, it is not a problem that the crack line CL is difficult to form between the positions N2 and N3.

如上所述,意圖形成裂痕線CL而形成輔助線AL。然而,可能存在即便形成輔助線AL亦不形成裂痕線CL、或形成異常之裂痕線CL(圖4)之情形。因此,於形成輔助線AL後,如實施形態1中說明般,進行劃線之檢查方法。於如本實施形態般維持無裂痕狀態後形成裂痕線CL之情形時,與不經由無裂痕狀態而形成裂痕線CL之情形相比,形成裂痕線CL之確實性降低。藉由實施形態1中所說明之劃線之檢查方法,可容易地判別此種形成不良之有無。 As described above, it is intended to form the crack line CL to form the auxiliary line AL. However, there may be cases where the crack line CL is not formed even if the auxiliary line AL is formed, or an abnormal crack line CL (FIG. 4) is formed. Therefore, after the auxiliary line AL is formed, as described in the first embodiment, the inspection method of scribing is performed. In the case where the crack line CL is formed after maintaining the crack-free state as in the present embodiment, the reliability of forming the crack line CL is reduced compared to the case where the crack line CL is not formed through the crack-free state. According to the inspection method of marking described in the first embodiment, the presence or absence of such a formation defect can be easily determined.

再者,於形成溝槽線TL時,亦可代替如圖17之箭頭所示般使刀尖51自位置N1移位至位置N3,而使其自位置N3移位至位置N1。於此情形時,刀尖51於圖15中代替方向DA而向方向DB移位。又,用以形成溝槽線TL之器具並不限定於刀尖51(圖15),亦可使用圓錐狀之刀尖。又,亦可代替滑動之刀尖而使用滾動之刀尖。於此情形時,滾動方向較佳為設為相當於方向DB(圖15)之方向。 Furthermore, when the groove line TL is formed, instead of shifting the tip 51 from the position N1 to the position N3 as shown by the arrow in FIG. 17, and shifting it from the position N3 to the position N1. In this case, the tool tip 51 is displaced in the direction DB instead of the direction DA in FIG. 15. In addition, the tool used to form the groove line TL is not limited to the tip 51 (FIG. 15 ), and a conical tip may also be used. Also, instead of sliding blade tips, rolling blade tips can be used. In this case, the scroll direction is preferably set to a direction equivalent to the direction DB (FIG. 15).

又,裂痕線CL可藉由於溝槽線TL上對玻璃基板4施加如解除溝槽線TL附近之內部應力之撓曲般之應力而開始。為了產生更大之應力,亦可沿著輔助線AL進行玻璃基板4之分斷。又,亦可代替形成輔助線AL,而例如藉由於所形成之溝槽線TL上或其附近再次將刀尖壓抵而進行外部應力之施加,或藉由照射雷射光等而進行加熱。 In addition, the crack line CL can be started by applying a stress to the glass substrate 4 on the trench line TL such as deflection of the internal stress near the trench line TL. In order to generate greater stress, the glass substrate 4 can also be divided along the auxiliary line AL. Also, instead of forming the auxiliary line AL, external stress may be applied by pressing the blade tip on or near the formed groove line TL again, or heating may be performed by irradiating laser light or the like.

又,玻璃基板4之緣之邊ED1及ED2於圖17中為長方形之短邊,但亦可為長方形之長邊。又,緣之形狀並不限定於長方形,例如亦可為正方形。又,邊ED1及ED2並不限定於直線狀者,亦可為曲線狀。又,玻璃基板4之上表面SF1並不限定於平坦者,亦可彎曲。 In addition, the sides ED1 and ED2 of the edge of the glass substrate 4 are the short sides of the rectangle in FIG. 17, but they may also be the long sides of the rectangle. In addition, the shape of the edge is not limited to a rectangle, and may be a square, for example. In addition, the sides ED1 and ED2 are not limited to straight ones, and may be curved. In addition, the upper surface SF1 of the glass substrate 4 is not limited to a flat one, and may be curved.

又,對使用玻璃基板4作為脆性基板之情形進行了詳細敍述,但脆性基板並不限定於玻璃基板,例如亦可使用陶瓷、矽、化合物半導體、藍寶石、或石英之基板。雷射光之波長、及反射構件10之材料可根據脆性基板之材料適當選擇。例如於脆性基板為矽基板之情形時,較佳為使用紅外線雷射。 In addition, the case where the glass substrate 4 is used as a brittle substrate is described in detail, but the brittle substrate is not limited to a glass substrate. For example, a ceramic, silicon, compound semiconductor, sapphire, or quartz substrate may be used. The wavelength of the laser light and the material of the reflective member 10 can be appropriately selected according to the material of the brittle substrate. For example, when the brittle substrate is a silicon substrate, it is preferable to use an infrared laser.

10‧‧‧反射構件 10‧‧‧Reflective member

11‧‧‧基板按壓裝置 11‧‧‧Substrate pressing device

12‧‧‧平台 12‧‧‧Platform

20‧‧‧雷射頭 20‧‧‧Laser head

21‧‧‧光源 21‧‧‧Light source

22‧‧‧感測器 22‧‧‧Sensor

28‧‧‧頭位置調整部 28‧‧‧Head position adjustment part

29‧‧‧放大器 29‧‧‧Amplifier

CL‧‧‧裂痕線 CL‧‧‧Crack Line

LI‧‧‧入射光 LI‧‧‧ incident light

LO‧‧‧出射光 LO‧‧‧Outgoing light

LR‧‧‧反射光 LR‧‧‧reflected light

SF1‧‧‧上表面(第1面) SF1‧‧‧Upper surface (1st side)

SF2‧‧‧下表面(第2面) SF2‧‧‧Bottom surface (Second side)

SL‧‧‧劃線 SL‧‧‧Scribe

TL‧‧‧溝槽線 TL‧‧‧Trench line

Claims (6)

一種劃線之檢查方法,其係具有溝槽線、及於上述溝槽線之正下方沿著上述溝槽線延伸之裂痕線的劃線之檢查方法,且具備準備脆性基板之步驟,該脆性基板具有第1面、及與上述第1面為相反之第2面,於上述第1面上設置有上述劃線,該劃線具有於上述第1面上之一位置沿延伸方向延伸之上述溝槽線,且進而具備如下之照射入射光之步驟:使藉由雷射產生之入射光自上述脆性基板之外部經由上述第1面向上述脆性基板之上述第1面之上述一位置的正下方照射,其中,上述入射光之光軸方向具有以垂直於上述第1面之方向為基準,朝在上述第1面上與上述延伸方向垂直之方向傾斜之傾斜成分,藉由上述裂痕線反射上述入射光,而產生朝向上述第2面之反射光,且進而具備:藉由反射上述反射光,而產生自上述第2面經由上述第1面朝向上述脆性基板之外之出射光的步驟;及測定上述出射光之強度之步驟;且上述照射入射光之步驟係藉由沿著與上述溝槽線交叉之方向利用上述入射光掃描上述第1面而進行。 A scribing inspection method, which is an inspection method with a groove line and a crack line extending along the groove line directly under the groove line, and a step of preparing a brittle substrate. The substrate has a first surface and a second surface opposite to the first surface. The scribing line is provided on the first surface, and the scribing line has the scribe line extending in the extending direction at a position on the first surface. Groove lines, and further include the following step of irradiating incident light: making incident light generated by a laser from the outside of the fragile substrate pass through the first surface directly below the one position of the first surface of the fragile substrate Irradiation, wherein the optical axis direction of the incident light has an oblique component inclined to a direction perpendicular to the extending direction on the first surface based on a direction perpendicular to the first surface, and the crack line reflects the Incident light to generate reflected light toward the second surface, and further comprising: by reflecting the reflected light, the step of generating outgoing light from the second surface through the first surface to the outside of the brittle substrate; and The step of measuring the intensity of the emitted light; and the step of irradiating the incident light is performed by scanning the first surface with the incident light in a direction crossing the groove line. 如請求項1之劃線之檢查方法,其中上述產生出射光之步驟係藉由配置於上述第2面之反射構件反射上述反射光而進行。 The inspection method for scribing according to claim 1, wherein the step of generating the emitted light is performed by reflecting the reflected light by the reflecting member disposed on the second surface. 如請求項1之劃線之檢查方法,其中上述產生出射光之步驟係藉由配置於上述第2面之反射構件反射上述反射光而進行。 The inspection method for scribing according to claim 1, wherein the step of generating the emitted light is performed by reflecting the reflected light by the reflecting member disposed on the second surface. 如請求項1至3中任一項之劃線之檢查方法,其中上述照射入射光之步驟係藉由自光源放射雷射光而進行,上述測定出射光之強度之步驟係藉由感測器檢測上述出射光 而進行,且進而具備使上述光源及上述感測器一起移動之步驟。 An inspection method for scribing according to any one of claims 1 to 3, wherein the step of irradiating incident light is performed by radiating laser light from a light source, and the step of measuring the intensity of the emitted light is detected by a sensor Above outgoing light And proceed, and further include a step of moving the light source and the sensor together. 如請求項1至3中任一項之劃線之檢查方法,其中上述準備脆性基板之步驟包括:於上述脆性基板之上述第1面上以獲得無裂痕狀態之方式形成溝槽線之步驟;維持上述無裂痕狀態之步驟;及形成沿著上述溝槽線延伸之裂痕線之步驟。 The scribing inspection method according to any one of claims 1 to 3, wherein the step of preparing a brittle substrate includes the step of forming groove lines on the first surface of the brittle substrate in a manner to obtain a crack-free state; The step of maintaining the above crack-free state; and the step of forming a crack line extending along the groove line. 如請求項4之劃線之檢查方法,其中上述準備脆性基板之步驟包括:於上述脆性基板之上述第1面上以獲得無裂痕狀態之方式形成溝槽線之步驟;維持上述無裂痕狀態之步驟;及形成沿著上述溝槽線延伸之裂痕線之步驟。 The scribing inspection method of claim 4, wherein the step of preparing the brittle substrate includes: forming groove lines on the first surface of the brittle substrate to obtain a crack-free state; maintaining the crack-free state Step; and the step of forming a crack line extending along the groove line.
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