TWI701134B - Conductive substrate, manufacturing method of conductive substrate - Google Patents

Conductive substrate, manufacturing method of conductive substrate Download PDF

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TWI701134B
TWI701134B TW105123738A TW105123738A TWI701134B TW I701134 B TWI701134 B TW I701134B TW 105123738 A TW105123738 A TW 105123738A TW 105123738 A TW105123738 A TW 105123738A TW I701134 B TWI701134 B TW I701134B
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metal
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metal layer
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須田貴広
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日商住友金屬礦山股份有限公司
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/14Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials to metal, e.g. car bodies
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05DPROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D7/00Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials
    • B05D7/24Processes, other than flocking, specially adapted for applying liquids or other fluent materials to particular surfaces or for applying particular liquids or other fluent materials for applying particular liquids or other fluent materials
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • CCHEMISTRY; METALLURGY
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    • C23C28/00Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
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    • G06F3/03Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0445Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using two or more layers of sensing electrodes, e.g. using two layers of electrodes separated by a dielectric layer
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices

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Abstract

提供一種導電性基板,其具有:絕緣性基材、形成在該絕緣性基材的至少一個面上之金屬層、形成在該金屬層上且含有氮系有機物之有機物層及形成在該有機物層上之黑化層,該有機物層面向該黑化層的面之純水的接觸角為60°以下。 Provided is a conductive substrate having: an insulating base material, a metal layer formed on at least one surface of the insulating base material, an organic substance layer formed on the metal layer and containing a nitrogen-based organic substance, and an organic substance layer formed on the organic substance layer On the upper blackened layer, the contact angle of pure water on the surface of the organic layer facing the blackened layer is 60° or less.

Description

導電性基板、導電性基板之製造方法 Conductive substrate and manufacturing method of conductive substrate

本發明關於一種導電性基板、導電性基板之製造方法。 The present invention relates to a conductive substrate and a manufacturing method of the conductive substrate.

電容式觸控面板藉由對由接近面板表面的物體所引起的電容的變化進行偵測,從而將在面板表面上接近的物體的位置資訊轉換成電訊號。由於用於電容式觸控面板的導電性基板設置在顯示器的表面,因此對於導電性基板的導電層的材料要求反射率低、難以視覺確認。 The capacitive touch panel detects changes in capacitance caused by objects approaching the surface of the panel, thereby converting the position information of the approaching objects on the surface of the panel into electrical signals. Since the conductive substrate used for the capacitive touch panel is provided on the surface of the display, the material of the conductive layer of the conductive substrate is required to have low reflectivity and is difficult to visually confirm.

因此,作為用於電容式觸控面板的導電層的材料,使用反射率低、難以視覺確認的材料,在透明基板或透明薄膜上形成有配線。 Therefore, as a material for the conductive layer of the capacitive touch panel, a material with low reflectivity and difficult to be visually recognized is used, and wiring is formed on a transparent substrate or a transparent film.

例如,專利文獻1中揭露了一種電容型數位式觸控面板,其觸控面板部由在PET薄膜上利用ITO膜印刷有訊號圖案與GND圖案的複數個透明片電極構成。 For example, Patent Document 1 discloses a capacitive digital touch panel, the touch panel portion of which is composed of a plurality of transparent sheet electrodes printed with a signal pattern and a GND pattern on a PET film using an ITO film.

然而,近年來具備有觸控面板的顯示器的大畫面化不斷發展,與其對應地,對於觸控面板用的透明導電性薄膜等導電性基板亦要求大面積化。然而,ITO由於其電阻值高且會產生訊號之劣化,因此存在不適合大型面板的問題。 However, in recent years, the larger screens of displays equipped with touch panels have been increasing. Correspondingly, conductive substrates such as transparent conductive films for touch panels have also been required to have larger areas. However, ITO has a problem that it is not suitable for large-scale panels due to its high resistance value and signal degradation.

因此,作為導電層的材料,正在研究使用銅等金屬來代替ITO。然而,由於金屬具有金屬光澤,因此存在因反射而使顯示器的目視辨認性降低的問題。因此,正在研究一種導電性基板,其形成有金屬層及抑 制金屬層表面上之光反射的黑化層,其中該金屬層為使用了銅等金屬之導電層。 Therefore, as a material for the conductive layer, research is underway to use metals such as copper instead of ITO. However, since metal has metallic luster, there is a problem that the visibility of the display decreases due to reflection. Therefore, a conductive substrate is being studied, which is formed with a metal layer and The blackened layer of light reflection on the surface of the metal layer, wherein the metal layer is a conductive layer using metals such as copper.

專利文獻1:日本特開2004-213114號公報 Patent Document 1: Japanese Patent Application Publication No. 2004-213114

然而,於導電性基板,例如當利用另外的裝置對金屬層與黑化層進行成膜時等,在形成金屬層後,在其上面形成黑化層之前的期間,有時會尋求防止金屬層的表面生鏽。因此,考慮進行在金屬層表面形成有機物層的防鏽處理,但若對進行了金屬層防鏽處理的面進行黑化層的成膜,則會有黑化層與金屬層的密接性降低的問題。 However, on conductive substrates, for example, when the metal layer and the blackened layer are formed by another device, after the metal layer is formed, it is sometimes sought to prevent the metal layer before the blackened layer is formed on it. The surface is rusty. Therefore, it is considered to perform anti-rust treatment to form an organic layer on the surface of the metal layer. However, if the blackened layer is formed on the surface of the metal layer anti-rust treatment, the adhesion between the blackened layer and the metal layer will decrease. problem.

鑑於上述先前技術的問題,於本發明的一個態樣,目的在於提供一種在金屬層與黑化層之間形成了有機物層的導電性基板,黑化層的密接性高。 In view of the above-mentioned problems of the prior art, in one aspect of the present invention, an object is to provide a conductive substrate in which an organic layer is formed between a metal layer and a blackened layer, and the blackened layer has high adhesion.

為了解決上述問題,於本發明的一個態樣,提供一種導電性基板,其具有:絕緣性基材、形成在該絕緣性基材的至少一個面上之金屬層、形成在該金屬層上且含有氮系有機物之有機物層以及形成在該有機物層上之黑化層,該有機物層面向該黑化層的面之純水的接觸角為60°以下。 In order to solve the above-mentioned problems, in one aspect of the present invention, a conductive substrate is provided, which has an insulating base material, a metal layer formed on at least one surface of the insulating base material, and a metal layer formed on the metal layer. An organic layer containing nitrogen-based organics and a blackened layer formed on the organic layer, and the contact angle of pure water on the surface of the organic layer facing the blackened layer is 60° or less.

根據本發明的一個方面,能夠提供一種在金屬層與黑化層之間形成了有機物層的導電性基板,黑化層的密接性高。 According to one aspect of the present invention, it is possible to provide a conductive substrate in which an organic layer is formed between a metal layer and a blackened layer, and the blackened layer has high adhesion.

10A、10B、20A、20B、30‧‧‧導電性基板 10A, 10B, 20A, 20B, 30‧‧‧Conductive substrate

11‧‧‧絕緣性基材 11‧‧‧Insulating base material

12、12A、12B‧‧‧金屬層 12, 12A, 12B‧‧‧Metal layer

13、13A、13B、32A、32B‧‧‧有機物層 13, 13A, 13B, 32A, 32B‧‧‧Organic layer

14、14A、14B、33A、33B‧‧‧黑化層 14, 14A, 14B, 33A, 33B‧‧‧Blackening layer

圖1A為本發明的實施形態的導電性基板剖面圖。 Fig. 1A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.

圖1B為本發明的實施形態的導電性基板剖面圖。 Fig. 1B is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.

圖2A為本發明的實施形態的導電性基板剖面圖。 Fig. 2A is a cross-sectional view of a conductive substrate according to an embodiment of the present invention.

圖2B為本發明的實施形態的導電性基板剖面圖。 Fig. 2B is a cross-sectional view of the conductive substrate according to the embodiment of the present invention.

圖3為本發明的實施形態具備有網狀配線的導電性基板俯視圖。 3 is a plan view of a conductive substrate provided with mesh wiring according to the embodiment of the present invention.

圖4A為圖3的A-A’線的剖面圖。 Fig. 4A is a cross-sectional view taken along the line A-A' of Fig. 3.

圖4B為圖3的A-A’線的剖面圖。 Fig. 4B is a cross-sectional view taken along the line A-A' in Fig. 3.

圖5為實施例、比較例中進行密接性試驗時形成的切割線的說明圖。 Fig. 5 is an explanatory view of a cutting line formed when an adhesion test is performed in an example and a comparative example.

圖6為實施例、比較例中有機物層的接觸角與密接性的關係的說明圖。 6 is an explanatory diagram of the relationship between the contact angle of the organic layer and the adhesiveness in Examples and Comparative Examples.

以下,對本發明的導電性基板及導電性基板之製造方法的一實施形態進行說明。 Hereinafter, an embodiment of the conductive substrate and the conductive substrate manufacturing method of the present invention will be described.

(導電性基板) (Conductive substrate)

本實施形態的導電性基板可以具有絕緣性基材、形成在絕緣性基材的至少一個面上之金屬層、形成在金屬層上且含有氮系有機物之有機物層以及形成在有機物層上之黑化層。並且,可以將有機物層面向該黑化層的面之純水的接觸角設為60°以下。 The conductive substrate of this embodiment may have an insulating substrate, a metal layer formed on at least one surface of the insulating substrate, an organic layer formed on the metal layer and containing nitrogen-based organics, and a black layer formed on the organic layer.化层。 The layer. In addition, the contact angle of pure water on the surface of the organic substance layer facing the blackened layer may be 60° or less.

另,本實施形態中的所謂導電性基板,包括對金屬層等進行圖案化之前的在絕緣性基材表面具有金屬層、有機物層及黑化層的基板,以及對金屬層等進行了圖案化的基板亦即配線基板。 In addition, the so-called conductive substrate in this embodiment includes a substrate having a metal layer, an organic layer, and a blackened layer on the surface of an insulating base material before patterning a metal layer, etc., and a patterned metal layer, etc. The substrate is also the wiring substrate.

在此以下首先對導電性基板所含的各構件進行說明。 Hereinafter, each member included in the conductive substrate will be described first.

作為絕緣性基材並無特別限定,可較佳使用會透射可見光的樹脂基板(樹脂膜)或玻璃基板等透明基材。 The insulating base material is not particularly limited, and a transparent base material such as a resin substrate (resin film) or a glass substrate that transmits visible light can be preferably used.

作為會透射可見光的樹脂基板的材料,例如可較佳使用聚醯胺系樹脂、聚對酞酸乙二酯系樹脂、聚萘二甲酸乙二酯(polyethylene naphthalate)系樹脂、環烯烴系樹脂、聚醯亞胺系樹脂、聚碳酸酯系樹脂等樹脂。特別地,作為會透射可見光的樹脂基板的材料,可更佳使用PET(聚對酞酸乙二酯)、COP(環烯烴聚合物)、PEN(聚萘二甲酸乙二酯)、聚醯亞胺、聚醯胺、聚碳酸酯等。 As the material for the resin substrate that transmits visible light, for example, polyamide resins, polyethylene terephthalate resins, polyethylene naphthalate resins, cycloolefin resins, Polyimide resins, polycarbonate resins and other resins. In particular, as a material for a resin substrate that transmits visible light, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), and poly(ethylene naphthalate) can be more preferably used. Amine, polyamide, polycarbonate, etc.

關於絕緣性基材的厚度並無特別限定,可根據作為導電性基板時所要求的強度或電容、光的透射率等任意選擇。作為絕緣性基材的厚度,例如可以設為10μm以上200μm以下。特別是用於觸控面板的用途時,絕緣性基材的厚度較佳設為20μm以上120μm以下,更佳設為20μm以上100μm以下。在用於觸控面板的用途的情形下,例如特別當尋求對顯示器整體的厚度進行薄化的用途時,絕緣性基材的厚度較佳為20μm以上50μm以下。 The thickness of the insulating base material is not particularly limited, and can be arbitrarily selected according to the required strength, capacitance, and light transmittance when used as a conductive substrate. As the thickness of the insulating base material, for example, it can be 10 μm or more and 200 μm or less. In particular, when used for touch panel applications, the thickness of the insulating base material is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of a use for a touch panel, for example, when a thinning of the thickness of the entire display is sought, the thickness of the insulating substrate is preferably 20 μm or more and 50 μm or less.

絕緣性基材的總光線透射率以高者為佳,例如總光線透射率較佳為30%以上,更佳為60%以上。藉由使絕緣性基材的總光線透射率為上述範圍,從而能夠例如當用於觸控面板之用途時充分地確保顯示器的目視辨認性。 The total light transmittance of the insulating substrate is preferably higher. For example, the total light transmittance is preferably 30% or more, more preferably 60% or more. By setting the total light transmittance of the insulating base material to the above-mentioned range, it is possible to sufficiently ensure the visibility of the display, for example, when it is used for a touch panel.

另,絕緣性基材的總光線透射率可利用JIS K 7361-1中規定的方法來評價。 In addition, the total light transmittance of the insulating substrate can be evaluated by the method specified in JIS K 7361-1.

接著,對金屬層進行說明。 Next, the metal layer will be described.

對於構成金屬層的材料並無特別限定,可以選擇具有取決於用途的電傳導率的材料,例如,構成金屬層的材料較佳為Cu與選自Ni、Mo、Ta、Ti、V、Cr、Fe、Mn、Co、W的至少一種以上的金屬的銅合金,或含銅的材料。又,金屬層亦可以為由銅構成的銅層。 The material constituting the metal layer is not particularly limited, and a material having electrical conductivity depending on the application can be selected. For example, the material constituting the metal layer is preferably Cu and selected from Ni, Mo, Ta, Ti, V, Cr, A copper alloy of at least one metal of Fe, Mn, Co, and W, or a material containing copper. In addition, the metal layer may be a copper layer made of copper.

對於在絕緣性基材的至少一面上形成金屬層的方法並無特別限定,為了降低光的透射率,較佳不在絕緣性基材與金屬層之間配置接著劑。換言之,金屬層較佳直接形成在絕緣性基材的至少一個面上。另,當如下所述在絕緣性基材與金屬層之間配置密接層時,金屬層較佳直接形成在密接層的上面。 The method of forming the metal layer on at least one surface of the insulating base material is not particularly limited. In order to reduce the light transmittance, it is preferable not to arrange an adhesive between the insulating base material and the metal layer. In other words, the metal layer is preferably formed directly on at least one surface of the insulating substrate. In addition, when the adhesion layer is arranged between the insulating base material and the metal layer as described below, the metal layer is preferably formed directly on the adhesion layer.

為了在絕緣性基材等的上面直接形成金屬層,金屬層較佳具有金屬薄膜層。又,金屬層亦可具有金屬薄膜層與金屬鍍層。 In order to form a metal layer directly on an insulating substrate or the like, the metal layer preferably has a metal thin film layer. In addition, the metal layer may also have a metal thin film layer and a metal plating layer.

例如可以利用乾式鍍覆法在絕緣性基材上形成金屬薄膜層,以該金屬薄膜層作為金屬層。藉此,能夠不經由接著劑而直接在絕緣性基材上形成金屬層。另,作為乾式鍍覆法,例如可較佳使用濺鍍法、蒸鍍法或離子鍍法等。 For example, a metal thin film layer can be formed on an insulating substrate by a dry plating method, and the metal thin film layer can be used as the metal layer. Thereby, a metal layer can be formed directly on the insulating base material without passing through an adhesive agent. In addition, as a dry plating method, for example, a sputtering method, an evaporation method, an ion plating method, etc. can be preferably used.

又,當增厚金屬層的膜厚時,亦可以金屬薄膜層作為供電層利用電鍍法(為濕式鍍覆法的一種)來形成金屬鍍層,藉此形成具有金屬薄膜層與金屬鍍層的金屬層。藉由使金屬層具有金屬薄膜層與金屬鍍層,從而在此情形中亦能夠不經由接著劑而在絕緣性基材上直接形成金屬層。 In addition, when the film thickness of the metal layer is increased, the metal thin film layer can also be used as a power supply layer to form a metal plating layer by electroplating (a kind of wet plating method), thereby forming a metal with a metal thin film layer and a metal plating layer. Floor. By making the metal layer have a metal thin film layer and a metal plating layer, in this case, the metal layer can be directly formed on the insulating substrate without using an adhesive.

另,在密接層上形成金屬層時亦可以同樣方式在密接層上直接形成金屬層。 In addition, when the metal layer is formed on the adhesive layer, the metal layer can be directly formed on the adhesive layer in the same manner.

金屬層的厚度並無特別限定,當將金屬層用作配線時,可根 據向該配線供給的電流大小或配線寬度等來任意選擇。 The thickness of the metal layer is not particularly limited. When the metal layer is used as wiring, it can be It can be arbitrarily selected according to the magnitude of the current supplied to the wiring or the wiring width.

惟,若金屬層變厚,則有時會產生下述等問題:當為了形成配線圖案而進行蝕刻時,由於蝕刻需要時間,因此容易產生側邊蝕刻,難以形成細線。因此,金屬層的厚度較佳為5μm以下,更佳為3μm以下。 However, if the metal layer becomes thicker, problems such as the following may occur: when etching is performed to form a wiring pattern, since the etching takes time, side etching is likely to occur and it is difficult to form thin lines. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

又,從特別地降低導電性基板的阻抗值,使可充分地供給電流的觀點來看,例如金屬層的厚度較佳為50nm以上,更佳為60nm以上,進一步更佳為150nm以上。 In addition, from the viewpoint of particularly lowering the resistance value of the conductive substrate to allow sufficient current to be supplied, for example, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and still more preferably 150 nm or more.

另,當金屬層如上所述具有金屬薄膜層與金屬鍍層時,金屬薄膜層的厚度與金屬鍍層的厚度的合計較佳為上述範圍。 In addition, when the metal layer has the metal thin film layer and the metal plating layer as described above, the total thickness of the metal thin film layer and the metal plating layer is preferably in the above range.

即使是在金屬層由金屬薄膜層構成的情況,或具有金屬薄膜層與金屬鍍層的情況的任一種情況下,對於金屬薄膜層的厚度也並無特別限定,例如較佳設為50nm以上500nm以下。 Even in the case where the metal layer is composed of a metal thin film layer, or when it has a metal thin film layer and a metal plating layer, the thickness of the metal thin film layer is not particularly limited. For example, it is preferably set to 50 nm or more and 500 nm or less .

如下所述例如可以將金屬層圖案化成想要的配線圖案來用作配線。並且,由於金屬層能夠比以往用作透明導電膜的ITO更降低電阻值,因此可藉由設置金屬層以減小導電性基板的電阻值。 As described below, for example, the metal layer can be patterned into a desired wiring pattern and used as wiring. In addition, since the metal layer can lower the resistance value than ITO used as a transparent conductive film in the past, the resistance value of the conductive substrate can be reduced by providing the metal layer.

接著,對有機物層進行說明。 Next, the organic substance layer will be described.

有機物層可形成在金屬層面向黑化層(後文將說明)的面。因此,作為導電性基板時,可以配置在金屬層與黑化層之間。 The organic layer may be formed on the side of the metal layer facing the blackening layer (described later). Therefore, when used as a conductive substrate, it can be arranged between the metal layer and the blackened layer.

藉由將有機物層形成在金屬層的上面,從而能夠防止在金屬層表面生鏽等。 By forming the organic layer on top of the metal layer, rust and the like on the surface of the metal layer can be prevented.

有機物層可含有氮系有機物。並且,用於有機物層的氮系有機物例如較佳含有1,2,3-苯并三唑或其衍生物。作為用於有機物層的氮系有 機物,具體來說,例如可舉出1,2,3-苯并三唑、5-甲基-1H苯并三唑等。 The organic substance layer may contain nitrogen-based organic substances. Furthermore, the nitrogen-based organic substance used for the organic substance layer preferably contains, for example, 1,2,3-benzotriazole or a derivative thereof. As the nitrogen system used in the organic layer Specific examples of the organic substance include 1,2,3-benzotriazole, 5-methyl-1H benzotriazole, and the like.

作為含有用於有機物層的氮系有機物的藥劑,例如可較佳使用銅用的防鏽處理劑,作為市售的藥品例如可較佳使用OPC-DEFENSER(商品名,奧野製藥工業股份有限公司)等。 As the agent containing the nitrogen-based organic substance used in the organic substance layer, for example, an antirust treatment agent for copper can be preferably used, and as a commercially available drug, for example, OPC-DEFENSER (trade name, Okuno Pharmaceutical Co., Ltd.) can be preferably used. Wait.

如上所述,若在形成有機物層之後形成黑化層,則有時黑化層的密接性會不足。因此,本發明的發明人等對提高黑化層之密接性的方法進行研究後,發現藉由使有機物層面向黑化層的面之純水的接觸角為60°以下,能夠提高黑化層的密接性,而完成了本發明。 As described above, if the blackened layer is formed after the organic layer is formed, the adhesion of the blackened layer may be insufficient. Therefore, the inventors of the present invention have studied methods for improving the adhesion of the blackened layer, and found that the blackened layer can be improved by making the contact angle of pure water on the surface of the organic layer facing the blackened layer 60° or less. The adhesiveness, and completed the present invention.

根據本發明的發明人等的研究,當未能形成金屬層與有機物層結合的均勻的被膜,而有機物僅堆積在金屬層表面時,黑化層的密接性有時會不足。並且,當這樣有機物堆積在金屬層表面時,有機物面向黑化層的面對於純水的接觸角超過60°。 According to studies by the inventors of the present invention, when a uniform coating film combining the metal layer and the organic layer cannot be formed, and the organic matter is only deposited on the surface of the metal layer, the adhesion of the blackened layer may be insufficient. In addition, when organic matter is deposited on the surface of the metal layer, the contact angle of the surface of the organic matter facing the blackened layer to pure water exceeds 60°.

對此,當形成有機物層時,在能夠形成金屬層與有機物層結合的均勻被膜的情況下,有機物層面向黑化層的面之純水的接觸角會在60°以下。並且,藉由形成金屬層與有機物層結合的均勻被膜,從而可在有機物層上形成黑化層時提高黑化層的密接性。 In contrast, when an organic layer is formed, if a uniform coating film combining the metal layer and the organic layer can be formed, the contact angle of pure water on the surface of the organic layer facing the blackened layer will be 60° or less. In addition, by forming a uniform coating film in which the metal layer and the organic layer are bonded, the adhesion of the black layer can be improved when the black layer is formed on the organic layer.

因此,較佳如上所述使有機物層面向黑化層的面之純水的接觸角為60°以下。 Therefore, it is preferable that the contact angle of pure water on the surface of the organic substance layer facing the blackened layer is 60° or less as described above.

對於使有機物層面向黑化層的面之純水的接觸角為60°以下的方法並無特別限定,可舉出以成為金屬層與有機物層結合的均勻被膜之方式,對金屬層表面供給作為有機物層原料的氮系有機物溶液之方法。 The method for making the contact angle of pure water on the surface of the organic layer facing the blackened layer 60° or less is not particularly limited, and it may be used to form a uniform coating on the surface of the metal layer and the organic layer. Nitrogen-based organic solution method of the raw material of the organic layer.

作為供給氮系有機物溶液的方法並無特別限定,可利用任意 方法來供給。例如,可藉由利用噴霧器來塗布氮系有機物溶液或將形成有金屬層的絕緣性基材浸漬到氮系有機物溶液,從而在金屬層上塗布含有構成有機物層的材料的溶液。 The method for supplying the nitrogen-based organic solution is not particularly limited, and any Method to supply. For example, by applying a nitrogen-based organic solution using a spray or immersing an insulating substrate on which a metal layer is formed in the nitrogen-based organic solution, a solution containing a material constituting the organic layer can be applied to the metal layer.

惟,當供給氮系有機物溶液時,較佳以成為金屬層與有機物層結合的均勻被膜之方式,對金屬層表面均勻地供給氮系有機物溶液。因此,較佳例如對金屬層形成黑化層之側的面,利用2種以上的複數種手段同時供給氮系有機物溶液,或者對金屬層形成黑化層之側的面,分成複數次反復供給氮系有機物溶液。 However, when supplying the nitrogen-based organic solution, it is preferable to uniformly supply the nitrogen-based organic solution to the surface of the metal layer so as to form a uniform coating film combining the metal layer and the organic layer. Therefore, it is preferable, for example, to supply the nitrogen-based organic solution to the surface of the metal layer on the side where the blackened layer is formed by two or more methods at the same time, or to repeatedly supply the surface on the side where the blackened layer of the metal layer is formed. Nitrogen-based organic solution.

另,對金屬層形成黑化層的面供給氮系有機物溶液時的氮系有機物溶液的條件並無特別限定,可根據氮系有機物溶液的種類等任意地選擇。具體來說,在形成有機物層時所使用的氮系有機物溶液中的氮系有機物的濃度並無特別限定,可考慮作為目標的有機物層中的氮系有機物的含量或操作性等來任意地選擇。 In addition, the conditions of the nitrogen-based organic solution when the nitrogen-based organic solution is supplied to the surface of the metal layer forming the blackened layer are not particularly limited, and can be arbitrarily selected according to the type of the nitrogen-based organic solution and the like. Specifically, the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution used when forming the organic substance layer is not particularly limited, and it can be arbitrarily selected in consideration of the content of the nitrogen-based organic substance in the target organic substance layer, workability, etc. .

惟,氮系有機物溶液中的氮系有機物的濃度下限值,較佳為1mL/L以上,更佳為2mL/L以上。上限值較佳為4mL/L以下。這是由於藉由將氮系有機物溶液中的氮系有機物的濃度設為1mL/L以上而能夠更確實地形成金屬層與有機物層結合的均勻被膜。惟,若氮系有機物溶液中的氮系有機物的濃度超過4mL/L,則有無法用水洗將剩餘的溶液去除乾淨之虞,因此較佳為4mL/L以下。 However, the lower limit of the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution is preferably 1 mL/L or more, and more preferably 2 mL/L or more. The upper limit is preferably 4 mL/L or less. This is because by setting the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution to 1 mL/L or more, it is possible to more reliably form a uniform film in which the metal layer and the organic substance layer are bonded. However, if the concentration of the nitrogen-based organic matter in the nitrogen-based organic matter solution exceeds 4 mL/L, it may not be possible to remove the remaining solution by washing with water, so it is preferably 4 mL/L or less.

又,向金屬層表面供給氮系有機物溶液時的氮系有機物溶液的溫度並無特別限定,可考慮該溶液的粘度、操作性或反應性等來任意地選擇。例如較佳為10℃以上,更佳為20℃以上。惟,由於若溫度升高則所 含有的氮系有機物有與其他物質反應之虞,因此較佳為40℃以下。 In addition, the temperature of the nitrogen-based organic solution when the nitrogen-based organic solution is supplied to the surface of the metal layer is not particularly limited, and can be arbitrarily selected in consideration of the viscosity, operability, and reactivity of the solution. For example, it is preferably 10°C or higher, more preferably 20°C or higher. However, because if the temperature rises, The nitrogen-based organic substance contained may react with other substances, so it is preferably 40°C or lower.

又,氮系有機物溶液的pH值並無特別限定,可考慮所使用的氮系有機物的種類或該溶液的反應性等來選擇,例如氮系有機物溶液的pH值較佳為2以上,更佳為3以上。惟,由於若pH值升高則薄膜中的氮系有機物的含量會降低,故氮系有機物溶液的pH值較佳為4以下。 In addition, the pH value of the nitrogen-based organic solution is not particularly limited, and it can be selected in consideration of the type of nitrogen-based organic substance used or the reactivity of the solution. For example, the pH value of the nitrogen-based organic solution is preferably 2 or more, more preferably For 3 or more. However, as the pH value increases, the content of nitrogen-based organic matter in the film will decrease, so the pH value of the nitrogen-based organic matter solution is preferably 4 or less.

對金屬層表面供給氮系有機物溶液並使之反應的處理時間的長度並無特別限定,可根據所使用的氮系有機物溶液的種類或要形成之有機物層的厚度等來任意地選擇。例如處理時間較佳為5秒以上,更佳為6秒以上。惟,由於若處理時間變得過長則有生產性降低之虞,故較佳為10秒以下。 The length of the treatment time for supplying and reacting the nitrogen-based organic solution to the surface of the metal layer is not particularly limited, and can be arbitrarily selected according to the type of the nitrogen-based organic solution used or the thickness of the organic layer to be formed. For example, the processing time is preferably 5 seconds or more, more preferably 6 seconds or more. However, if the processing time becomes too long, the productivity may decrease, so it is preferably 10 seconds or less.

又,本發明的發明人等亦發現藉由在金屬層與黑化層之間配置含有氮系有機物的有機物層,能夠抑制導電性基板的反射率。 In addition, the inventors of the present invention have also discovered that by disposing an organic layer containing a nitrogen-based organic substance between the metal layer and the blackened layer, the reflectance of the conductive substrate can be suppressed.

為了抑制導電性基板的反射率,尤其有機物層的氮系有機物的含量較佳為0.2μg/cm2以上,更佳為0.3μg/cm2以上。 In order to suppress the reflectance of the conductive substrate, in particular, the content of the nitrogen-based organic substance in the organic layer is preferably 0.2 μg/cm 2 or more, more preferably 0.3 μg/cm 2 or more.

這是因為根據本發明的發明人等的研究,藉由將有機物層的氮系有機物的含量設為0.2μg/cm2以上,從而能夠大幅地抑制導電性基板的反射率。又,若有機物層的氮系有機物的含量增加,則能夠降低將黑化層的顏色換算成CIE(L*a*b*)色彩系統時的a*值、b*值,特別是能夠使導電性基板的配線不顯眼,因此較佳。 This is because according to the research of the inventors of the present invention, the reflectance of the conductive substrate can be significantly suppressed by setting the content of the nitrogen-based organic substance in the organic layer to be 0.2 μg/cm 2 or more. In addition, if the content of nitrogen-based organic matter in the organic matter layer increases, the a* value and b* value when the color of the blackened layer is converted into the CIE (L*a*b*) color system can be reduced, and in particular, it can be made conductive The wiring of the flexible substrate is not conspicuous, so it is preferable.

有機物層的氮系有機物的含量上限值並無特別限定。惟,為了增加有機物層的氮系有機物的含量,會提高在形成有機物層時所使用的氮系有機物溶液的濃度,或延長氮系有機物溶液的供給時間等。因此,若 要過度地增加有機物層的氮系有機物的含量,則有氮系有機物溶液的操作性降低,或用以形成有機物層所需的時間變長,生產性降低之虞。因此,有機物層的氮系有機物的含量例如較佳設為0.5μg/cm2以下。 The upper limit of the content of the nitrogen-based organic substance in the organic substance layer is not particularly limited. However, in order to increase the nitrogen-based organic matter content of the organic matter layer, the concentration of the nitrogen-based organic matter solution used when the organic matter layer is formed is increased, or the supply time of the nitrogen-based organic matter solution is extended. Therefore, if the content of the nitrogen-based organic substance in the organic substance layer is excessively increased, the operability of the nitrogen-based organic substance solution may decrease, or the time required to form the organic substance layer may become longer, and productivity may decrease. Therefore, the content of the nitrogen-based organic substance in the organic substance layer is preferably set to 0.5 μg/cm 2 or less, for example.

接著,對黑化層進行說明。 Next, the blackened layer will be described.

黑化層可以形成在有機物層的上面。 The blackening layer may be formed on the organic layer.

黑化層的材料並無特別限定,只要是能夠抑制金屬層表面的光反射的材料即適用。 The material of the blackening layer is not particularly limited, as long as it is a material that can suppress light reflection on the surface of the metal layer.

黑化層例如較佳含有選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn的至少1種以上的金屬。又,黑化層還可以進一步含有選自碳、氧、氫、氮的1種以上的元素。 The blackened layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In addition, the blackened layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

另,黑化層可含有金屬合金,該金屬合金含有選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn的至少2種以上的金屬。此時,黑化層也可以進一步含有選自碳、氧、氫、氮的1種以上的元素。此時,作為含有選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn至少2種以上之金屬的金屬合金,可較佳使用Cu-Ti-Fe合金、Cu-Ni-Fe合金、Ni-Cu合金、Ni-Zn合金、Ni-Ti合金、Ni-W合金、Ni-Cr合金、Ni-Cu-Cr合金。特別是可進一步較佳使用Ni-Cu合金。 In addition, the blackening layer may contain a metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. At this time, the blackened layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, Cu-Ti- Fe alloy, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy. In particular, Ni-Cu alloy can be used more preferably.

黑化層的形成方法並無特別限定,可利用任意方法來形成,例如可利用乾式法或濕式法來成膜。 The method for forming the blackened layer is not particularly limited, and it can be formed by any method, for example, it can be formed by a dry method or a wet method.

當利用乾式法將黑化層成膜時,其具體方法並無特別限定,例如可較佳使用濺鍍法、離子鍍法或蒸鍍法等乾式鍍覆法。由於利用乾式法將黑化層成膜之情形容易控制膜厚,因此更佳使用濺鍍法。另,亦可在 黑化層添加如上所述選自碳、氧、氫、氮的1種以上的元素,此時可更佳使用反應性濺鍍法。 When the blackened layer is formed into a film by a dry method, the specific method is not particularly limited. For example, a dry plating method such as a sputtering method, an ion plating method, or an evaporation method can be preferably used. Since the film thickness of the blackened layer can be easily controlled by the dry method, the sputtering method is more preferable. Alternatively, you can also The blackening layer is added with one or more elements selected from carbon, oxygen, hydrogen, and nitrogen as described above. In this case, a reactive sputtering method can be more preferably used.

當利用反應性濺鍍法將黑化層成膜時,作為靶,可使用含有構成黑化層的金屬物種(metal species)的靶。當黑化層含有合金時,亦可按黑化層所含的每個金屬物種來使用靶,在基材等被成膜體的表面形成合金,亦可使用預先將黑化層所含的金屬進行了合金化的靶。 When the blackened layer is formed into a film by the reactive sputtering method, as a target, a target containing a metal species constituting the blackened layer can be used. When the blackened layer contains an alloy, the target can also be used for each metal species contained in the blackened layer to form an alloy on the surface of the film-forming body such as the substrate, or the metal contained in the blackened layer can be used in advance. Alloyed target.

又,當在黑化層含有選自碳、氧、氫、氮的1種以上的元素時,此等可藉由預先添加在將黑化層成膜時的環境中來添加在黑化層中。例如,當在黑化層添加碳之情形時,可以將一氧化碳氣體及/或二氧化碳氣體預先添加在進行濺鍍時的環境中,當在黑化層中添加氧時,可以將氧氣預先添加在進行濺鍍時的環境中,當在黑化層中添加氫時,可以將氫氣及/或水預先添加在進行濺鍍時的環境中,當在黑化層中添加氮時,可以將氮氣預先添加在進行濺鍍時的環境中。可以藉由在將黑化膜成膜時的非活性氣體中添加此等氣體,從而在黑化層中添加選自碳、氧、氫、氮的1種以上的元素。另,作為非活性氣體可以較佳使用氬。 In addition, when the blackened layer contains at least one element selected from carbon, oxygen, hydrogen, and nitrogen, these can be added to the blackened layer by pre-adding to the environment when the blackened layer is formed. . For example, when carbon is added to the blackened layer, carbon monoxide gas and/or carbon dioxide gas can be added to the environment during sputtering in advance. When oxygen is added to the blackened layer, oxygen can be added in advance. In the sputtering environment, when hydrogen is added to the blackened layer, hydrogen and/or water can be added to the environment during sputtering in advance. When nitrogen is added to the blackened layer, nitrogen can be added in advance In the environment during sputtering. One or more elements selected from carbon, oxygen, hydrogen, and nitrogen can be added to the blackened layer by adding these gases to the inert gas when forming the blackened film. In addition, argon can be preferably used as the inert gas.

利用濕式法將黑化層成膜時,可以根據黑化層的材料來使用鍍液,例如可以利用電鍍法來進行成膜。 When the blackened layer is formed into a film by a wet method, a plating solution can be used according to the material of the blackened layer. For example, the film can be formed by an electroplating method.

如上所述黑化層可以用乾式法、濕式法的任意方法來形成,但由於在形成黑化層時,有機物層所含的氮系有機物會有溶解在鍍液中,並進入黑化層中,從而影響色調或其他特性之虞,因此較佳利用乾式法來成膜。 As mentioned above, the blackened layer can be formed by any method of dry method or wet method. However, when the blackened layer is formed, the nitrogen-based organic matter contained in the organic layer will dissolve in the plating solution and enter the blackened layer. In this case, the color tone or other characteristics may be affected, so it is preferable to use the dry method to form the film.

黑化層的厚度並無特別限定,例如較佳為15nm以上,更佳 為25nm以上。這是因為當黑化層的厚度薄之情形時,由於有時無法充分抑制金屬層表面的光反射,因此較佳構成為如上所述藉由使黑化層的厚度為15nm以上而可特別地抑制金屬層表面的光反射。 The thickness of the blackening layer is not particularly limited, for example, preferably 15nm or more, more preferably It is 25nm or more. This is because when the thickness of the blackened layer is thin, the light reflection on the surface of the metal layer may not be sufficiently suppressed. Therefore, it is preferable to configure the blackened layer to have a thickness of 15 nm or more as described above. Suppress light reflection on the surface of the metal layer.

對於黑化層的厚度上限值並無特別限定,即使加厚至必要以上的厚度,成膜所需的時間或形成配線時的蝕刻所需的時間也會變長,從而招致成本的上升。因此,黑化層厚度較佳設為70nm以下,更佳設為50nm以下。 The upper limit of the thickness of the blackened layer is not particularly limited, and even if it is thicker than necessary, the time required for film formation or the time required for etching when forming wiring becomes longer, which incurs an increase in cost. Therefore, the thickness of the blackened layer is preferably 70 nm or less, and more preferably 50 nm or less.

又,導電性基板除了上述的絕緣性基材、金屬層、有機物層、黑化層以外,還可以設置任意的層。例如可以設置密接層。 In addition, the conductive substrate may be provided with any layers other than the above-mentioned insulating base material, metal layer, organic layer, and blackened layer. For example, an adhesive layer can be provided.

對密接層的結構例進行說明。 An example of the structure of the adhesion layer will be described.

如上所述可在絕緣性基材上形成金屬層,但在絕緣性基材上直接形成金屬層之情形時,絕緣性基材與金屬層的密接性有時會不足。因此,當在絕緣性基材的上面直接形成有金屬層時,在製造過程中或使用時金屬層有時會從絕緣性基材剝離。 As described above, the metal layer can be formed on the insulating base material, but when the metal layer is directly formed on the insulating base material, the adhesion between the insulating base material and the metal layer may be insufficient. Therefore, when the metal layer is directly formed on the insulating base material, the metal layer may peel off from the insulating base material during the manufacturing process or during use.

因此,在本實施形態的導電性基板中,為了提高絕緣性基材與金屬層的密接性,可在絕緣性基材上配置密接層。 Therefore, in the conductive substrate of the present embodiment, in order to improve the adhesion between the insulating base material and the metal layer, an adhesion layer may be arranged on the insulating base material.

藉由在絕緣性基材與金屬層之間配置密接層,能夠提高絕緣性基材與金屬層的密接性,並能夠抑制金屬層從絕緣性基材剝離。 By disposing the adhesive layer between the insulating base material and the metal layer, the adhesiveness of the insulating base material and the metal layer can be improved, and the metal layer can be prevented from peeling off the insulating base material.

又,密接層也能夠起到黑化層的作用。因此,也能夠抑制來自金屬層的下面側亦即絕緣性基材側的光所引起的金屬層的光反射。 In addition, the adhesion layer can also function as a blackening layer. Therefore, it is also possible to suppress light reflection of the metal layer due to light from the lower surface side of the metal layer, that is, the insulating base material side.

對於構成密接層的材料並無特別限定,可根據絕緣性基材與金屬層的密接力或所要求的金屬層表面的光反射的抑制程度,以及對導電 性基板的使用環境(例如濕度或溫度)的穩定性程度等來任意地選擇。 The material constituting the adhesion layer is not particularly limited, and it can be based on the adhesion between the insulating base material and the metal layer or the degree of suppression of light reflection on the surface of the metal layer required, and the resistance to conductivity The degree of stability of the use environment (for example, humidity or temperature) of the flexible substrate can be arbitrarily selected.

密接層較佳含有例如選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn至少1種以上的金屬。又,密接層也可進一步含有選自碳、氧、氫、氮的1種以上的元素。 The adhesive layer preferably contains, for example, at least one metal selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In addition, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen.

另,密接層可含有金屬合金,該金屬合金含有選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn至少2種以上的金屬。即使在此情況下,密接層也可以進一步含有選自碳、氧、氫、氮的1種以上的元素。此時,作為含有選自Ni、Zn、Mo、Ta、Ti、V、Cr、Fe、Co、W、Cu、Sn、Mn至少2種以上的金屬的金屬合金,例如可較佳使用Cu-Ti-Fe合金或Cu-Ni-Fe合金、Ni-Cu合金、Ni-Zn合金、Ni-Ti合金、Ni-W合金、Ni-Cr合金、Ni-Cu-Cr合金。特別可更佳使用Ni-Cu合金。 In addition, the adhesion layer may contain a metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Even in this case, the adhesion layer may further contain one or more elements selected from carbon, oxygen, hydrogen, and nitrogen. At this time, as a metal alloy containing at least two metals selected from Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, for example, Cu-Ti can be preferably used -Fe alloy or Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy. In particular, Ni-Cu alloy can be better used.

密接層的成膜方法並無特別限定,較佳利用乾式鍍覆法來進行成膜。作為乾式鍍覆法,例如可較佳使用濺鍍法、離子鍍法或蒸鍍法等。由於利用乾式法將密接層成膜之情形時,容易控制膜厚,因此更佳使用濺鍍法。另,也可以在密接層添加如上所述選自碳、氧、氫、氮的1種以上的元素,此時可更佳使用反應性濺鍍法。 The film forming method of the adhesion layer is not particularly limited, and it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, or a vapor deposition method can be preferably used. Since it is easy to control the film thickness when the adhesive layer is formed by the dry method, the sputtering method is preferably used. In addition, one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen as described above may be added to the adhesive layer. In this case, the reactive sputtering method can be more preferably used.

當密接層含有選自碳、氧、氫、氮的1種以上的元素時,可藉由在將密接層成膜時的環境中預先添加含有選自碳、氧、氫、氮的1種以上的元素的氣體,而添加在密接層中。例如,當在密接層添加碳之情形時,可預先在進行乾式鍍覆時的環境中添加一氧化碳氣體及/或二氧化碳氣體,當在密接層添加氧之情形時,可預先在進行乾式鍍覆時的環境中添加氧氣,當在密接層添加氫之情形時,可預先在進行乾式鍍覆時的環境中 添加氫氣及/或水,當在密接層添加氮之情形時,可預先在進行乾式鍍覆時的環境中添加氮氣。 When the adhesive layer contains one or more elements selected from carbon, oxygen, hydrogen, and nitrogen, it can be prepared by adding one or more elements selected from carbon, oxygen, hydrogen, and nitrogen to the environment when the adhesive layer is formed. The elements of the gas are added in the adhesion layer. For example, when carbon is added to the adhesion layer, carbon monoxide gas and/or carbon dioxide gas can be added to the environment during dry plating in advance, and when oxygen is added to the adhesion layer, the dry plating can be added beforehand. Oxygen is added to the environment of, when hydrogen is added to the adhesion layer, it can be in the environment of dry plating in advance Hydrogen and/or water are added, and when nitrogen is added to the adhesion layer, nitrogen can be added to the environment during dry plating in advance.

含有選自碳、氧、氫、氮的1種以上元素的氣體,較佳添加在非活性氣體,作為乾式鍍覆時的環境氣體。作為非活性氣體並無特別限定,例如可較佳使用氬。 A gas containing one or more elements selected from carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas as an ambient gas during dry plating. The inert gas is not particularly limited. For example, argon can be preferably used.

藉由如上所述利用乾式鍍覆法來將密接層成膜,能夠提高絕緣性基材與密接層的密接性。並且,密接層由於例如可含有金屬作為主成分,因此與金屬層的密接性亦高。因此,藉由在絕緣性基材與金屬層之間配置密接層,能夠抑制金屬層的剝離。 By forming the adhesive layer into a film by the dry plating method as described above, the adhesiveness between the insulating base material and the adhesive layer can be improved. In addition, since the adhesion layer may contain metal as a main component, for example, the adhesion to the metal layer is also high. Therefore, by disposing the adhesive layer between the insulating base material and the metal layer, peeling of the metal layer can be suppressed.

密接層的厚度並無特別限定,例如較佳設為3nm以上50nm以下,更佳設為3nm以上35nm以下,進一步較佳設為3nm以上33nm以下。 The thickness of the adhesion layer is not particularly limited. For example, it is preferably 3 nm or more and 50 nm or less, more preferably 3 nm or more and 35 nm or less, and still more preferably 3 nm or more and 33 nm or less.

當密接層亦起到黑化層的作用之情形時,亦即抑制金屬層的光反射之情形時,較佳將密接層的厚度如上所述設為3nm以上。 When the adhesion layer also functions as a blackening layer, that is, when the light reflection of the metal layer is suppressed, the thickness of the adhesion layer is preferably 3 nm or more as described above.

密接層的厚度上限值並無特別限定,即使加厚至必要以上的厚度,成膜所需的時間或形成配線時的蝕刻所需的時間亦會變長,從而招致成本的上升。因此,密接層的厚度較佳如上所述設為50nm以下,更佳設為35nm以下,進一步較佳設為33nm以下。 The upper limit of the thickness of the adhesion layer is not particularly limited, and even if it is thicker than necessary, the time required for film formation or the time required for etching during wiring formation will become longer, leading to an increase in cost. Therefore, the thickness of the adhesion layer is preferably 50 nm or less as described above, more preferably 35 nm or less, and still more preferably 33 nm or less.

接著,對導電性基板的結構例進行說明。 Next, a structural example of the conductive substrate will be described.

如上所述,本實施形態的導電性基板可具有絕緣性基材、金屬層、有機物層及黑化層。又,亦可以任意地設置密接層等之層。 As described above, the conductive substrate of the present embodiment may have an insulating base material, a metal layer, an organic layer, and a blackening layer. In addition, layers such as adhesion layers may be arbitrarily provided.

關於具體的結構例,以下使用圖1A、圖1B、圖2A、圖2B來進行說明。圖1A、圖1B、圖2A、圖2B表示本實施形態的導電性基板平 行於絕緣性基材、金屬層、有機物層、黑化層的層疊方向的面之剖面圖的例子。 Regarding specific configuration examples, the following description uses FIGS. 1A, 1B, 2A, and 2B. Figures 1A, 1B, 2A, and 2B show the conductive substrate plane of this embodiment An example of a cross-sectional view of the plane in the stacking direction of the insulating base material, the metal layer, the organic layer, and the blackened layer.

本實施形態的導電性基板可具有例如在絕緣性基材的至少一個面上從絕緣性基材側依序層疊了金屬層、有機物層、黑化層的構造。 The conductive substrate of the present embodiment may have, for example, a structure in which a metal layer, an organic layer, and a blackened layer are sequentially laminated on at least one surface of the insulating base material from the insulating base material side.

具體來說,例如,如圖1A所示的導電性基板10A,可將金屬層12、有機物層13、黑化層14逐層地依序層疊在絕緣性基材11的一面11a側。又,如圖1B所示的導電性基板10B,亦可分別將金屬層12A、12B、有機物層13A、13B、黑化層14A、14B逐層地依序層疊在絕緣性基材11的一面11a側與另一面(他面)11b側。 Specifically, for example, in the conductive substrate 10A shown in FIG. 1A, the metal layer 12, the organic layer 13, and the blackened layer 14 can be sequentially laminated on the side 11a of the insulating base material 11 layer by layer. In addition, the conductive substrate 10B shown in FIG. 1B may have metal layers 12A, 12B, organic layers 13A, 13B, and blackened layers 14A, 14B layered on one side 11a of the insulating base material 11, respectively. Side and the other side (other side) 11b side.

又,亦可形成為下述構成:進一步例如設置密接層作為任意的層。此情形時,例如可形成為下述構造:在絕緣性基材的至少一個面上從絕緣性基材側依序形成了密接層、金屬層、有機物層及黑化層的構造。 Moreover, it can also be set as the structure which provided an adhesive layer as an arbitrary layer further, for example. In this case, for example, a structure in which an adhesive layer, a metal layer, an organic layer, and a blackened layer are sequentially formed on at least one surface of the insulating base material from the insulating base material side.

具體來說,例如如圖2A所示的導電性基板20A,可在絕緣性基材11的一面11a側,依序層疊密接層15、金屬層12、有機物層13及黑化層14。 Specifically, for example, a conductive substrate 20A as shown in FIG. 2A may have an adhesive layer 15, a metal layer 12, an organic layer 13, and a blackened layer 14 laminated in this order on the side 11a of the insulating base material 11.

此情形時,亦可形成為構成:在絕緣性基材11的兩面層疊了密接層、金屬層、有機物層、黑化層的構成。具體來說,如圖2B所示的導電性基板20B,可在絕緣性基材11的一面11a側及他面11b側,分別依序層疊密接層15A、15B、金屬層12A、12B、有機物層13A、13B及黑化層14A、14B。 In this case, it is also possible to form a structure in which an adhesive layer, a metal layer, an organic layer, and a blackened layer are laminated on both surfaces of the insulating base material 11. Specifically, the conductive substrate 20B shown in FIG. 2B can be laminated on one surface 11a side and the other surface 11b side of the insulating base material 11, respectively, and the adhesion layers 15A, 15B, the metal layers 12A, 12B, and the organic layer 13A, 13B and blackened layers 14A, 14B.

另,在圖1B、圖2B中,雖揭示當在絕緣性基材的兩面層疊有金屬層、有機物層、黑化層等之情形時,以絕緣性基材11為對稱面以在 絕緣性基材11的上下所層疊的層成為對稱之方式進行配置的例子,但並不限定於該形態。例如,在圖2B中,亦可使絕緣性基材11的一面11a側的構成與圖1B的構成同樣,形成為不設置密接層15A而依序層疊有金屬層12A、有機物層13A及黑化層14A的形態,使在絕緣性基材11上下所層疊的層為非對稱的構成。 In addition, in FIGS. 1B and 2B, although it is disclosed that when a metal layer, an organic layer, a blackened layer, etc. are laminated on both sides of an insulating base material, the insulating base material 11 is used as a symmetry plane to The layer laminated on the top and bottom of the insulating base material 11 is an example in which the layers are arranged symmetrically, but it is not limited to this form. For example, in FIG. 2B, the structure on the side 11a of the insulating base material 11 may be the same as the structure in FIG. 1B. The adhesive layer 15A is not provided and the metal layer 12A, the organic layer 13A, and the blackening layer are sequentially laminated The form of the layer 14A is such that the layers stacked above and below the insulating base 11 have an asymmetric configuration.

又,在本實施形態的導電性基板中,亦可藉由在絕緣性基材上設置金屬層、有機物層及黑化層,而抑制金屬層所引起的光反射,抑制導電性基板的反射率。 In addition, in the conductive substrate of this embodiment, by providing a metal layer, an organic layer, and a blackening layer on the insulating base material, the light reflection caused by the metal layer can be suppressed, and the reflectance of the conductive substrate can be suppressed. .

對於本實施形態的導電性基板的反射率程度並無特別限定,例如要提高用作觸控面板用導電性基板之情形時的顯示器的目視辨認性時,反射率較佳為低。例如,波長400nm以上且700nm以下的光的平均反射率較佳為20%以下,更佳為17%以下,尤佳為15%以下。 The degree of reflectivity of the conductive substrate of the present embodiment is not particularly limited. For example, when the visibility of a display is to be improved when it is used as a conductive substrate for a touch panel, the reflectance is preferably low. For example, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is preferably 20% or less, more preferably 17% or less, and particularly preferably 15% or less.

反射率的測量,可對導電性基板的黑化層照射光來進行測量。具體來說,例如當如圖1A般在絕緣性基材11的一面11a側依序層疊有金屬層12、有機物層13、黑化層14時,能以向黑化層14照射光的方式對黑化層14的表面A照射光進行測量。並且,測量時可將波長400nm以上且700nm以下的光例如以波長1nm的間隔如上所述照射於導電性基板的黑化層14的表面A,將所測得的值的平均值作為該導電性基板的反射率。 The reflectance can be measured by irradiating the blackened layer of the conductive substrate with light. Specifically, for example, when the metal layer 12, the organic layer 13, and the blackened layer 14 are sequentially laminated on the side 11a of the insulating substrate 11 as shown in FIG. 1A, the blackened layer 14 can be irradiated with light. The surface A of the blackened layer 14 is irradiated with light for measurement. In addition, during the measurement, light having a wavelength of 400 nm or more and 700 nm or less may be irradiated to the surface A of the blackened layer 14 of the conductive substrate at intervals of 1 nm in wavelength, for example, as described above, and the average value of the measured values may be regarded as the conductivity The reflectivity of the substrate.

本實施形態的導電性基板可較佳用作觸控面板用的導電性基板。此情形時,導電性基板可形成為具備有網(mesh)狀配線的構成。 The conductive substrate of this embodiment can be preferably used as a conductive substrate for touch panels. In this case, the conductive substrate may be formed to have a configuration with mesh-shaped wiring.

具備有網狀配線的導電性基板,可以藉由對上述說明之本實施形態的導電性基板的金屬層、有機物層及黑化層進行蝕刻而得。 The conductive substrate provided with the mesh wiring can be obtained by etching the metal layer, the organic layer, and the blackened layer of the conductive substrate of the present embodiment described above.

例如,可利用兩層的配線來形成網狀配線。將具體的構成例表示於圖3。圖3揭示從金屬層等的層疊方向的上面側觀察具備有網狀配線的導電性基板30的圖,為了容易理解配線圖案,省略了絕緣性基材11及對金屬層進行圖案化所形成的配線31A、32B以外之層的記載。又,亦揭示了透過絕緣性基材11能看到的配線31B。 For example, two layers of wiring can be used to form mesh wiring. A specific configuration example is shown in FIG. 3. 3 illustrates a view of the conductive substrate 30 provided with mesh wiring viewed from the upper side in the laminating direction of the metal layer, etc. In order to facilitate understanding of the wiring pattern, the insulating base material 11 and the patterning of the metal layer are omitted. Description of layers other than wiring 31A, 32B. In addition, the wiring 31B that can be seen through the insulating base material 11 is also disclosed.

圖3所示的導電性基板30具有絕緣性基材11、平行於圖中Y軸方向的複數條配線31A及平行於X軸方向的配線31B。另,配線31A、31B藉由蝕刻金屬層而形成,在該配線31A、31B的上面或下面形成有未圖示的有機物層及黑化層。又,有機物層及黑化層被蝕刻成與配線31A、31B相同的形狀。 The conductive substrate 30 shown in FIG. 3 has an insulating base material 11, a plurality of wirings 31A parallel to the Y-axis direction in the figure, and wirings 31B parallel to the X-axis direction. In addition, the wirings 31A and 31B are formed by etching a metal layer, and an organic substance layer and a blackening layer (not shown) are formed on the upper or lower surfaces of the wirings 31A and 31B. In addition, the organic layer and the blackened layer are etched into the same shape as the wirings 31A and 31B.

絕緣性基材11與配線31A、31B的配置並無特別限定。將絕緣性基材11與配線的配置的構成例表示於圖4A、圖4B。圖4A、圖4B相當於圖3的A-A’線上的剖面圖。 The arrangement of the insulating base material 11 and the wirings 31A and 31B is not particularly limited. A configuration example of the arrangement of the insulating base material 11 and wiring is shown in FIGS. 4A and 4B. 4A and 4B correspond to cross-sectional views on the line A-A' in FIG. 3.

首先,如圖4A所示,亦可在絕緣性基材11的上下面分別配置有配線31A、31B。另,在圖4A中,在配線31A的上面及31B的下面,配置有被蝕刻成與配線相同形狀的有機物層32A、32B、黑化層33A、33B。 First, as shown in FIG. 4A, wirings 31A and 31B may be arranged on the upper and lower surfaces of the insulating base material 11, respectively. In addition, in FIG. 4A, organic layers 32A, 32B, and blackened layers 33A, 33B etched into the same shape as the wiring are arranged on the upper surface and the lower surface of the wiring 31A.

又,如圖4B所示,亦可使用1組絕緣性基材11,夾著一個絕緣性基材11並在上下面配置配線31A、31B,且將一個配線31B配置在絕緣性基材11之間。此情形時在配線31A、31B的上面亦配置有被蝕刻成與配線相同形狀的有機物層32A、32B、黑化層33A、33B。另,如上所述,除了金屬層、有機物層、黑化層以外亦可設置密接層。因此,在圖4A、圖4B任一情形中,例如亦可在配線31A及/或配線31B與絕緣性基材11之 間設置密接層。當設置密接層之情形時,較佳為密接層亦被蝕刻成與配線31A、31B相同的形狀。 In addition, as shown in FIG. 4B, a set of insulating base materials 11 may also be used. One insulating base material 11 is sandwiched, and wirings 31A and 31B are arranged on the upper and lower sides, and one wiring 31B is arranged on the insulating base 11 between. In this case, the organic layer 32A, 32B and the blackened layer 33A, 33B etched into the same shape as the wiring are also arranged on the upper surface of the wiring 31A, 31B. In addition, as described above, in addition to the metal layer, the organic layer, and the blackened layer, an adhesion layer may be provided. Therefore, in either case of FIGS. 4A and 4B, for example, the wiring 31A and/or the wiring 31B and the insulating substrate 11 may be Set up a close layer between. When an adhesive layer is provided, it is preferable that the adhesive layer is also etched into the same shape as the wiring 31A, 31B.

圖3及圖4A所示的具有網狀配線的導電性基板,例如可由如圖1B所示在絕緣性基材11的兩面具備有金屬層12A、12B、有機物層13A、13B及黑化層14A、14B的導電性基板形成。 The conductive substrate with mesh wiring shown in FIGS. 3 and 4A can be provided with metal layers 12A, 12B, organic layers 13A, 13B, and blackened layers 14A on both sides of an insulating base material 11 as shown in FIG. 1B, for example. , 14B conductive substrate is formed.

若以使用圖1B的導電性基板來形成的情形為例進行說明,則首先以平行於圖1B中Y軸方向的複數個線狀圖案沿X軸方向空出預定間隔來配置的方式,對絕緣性基材11的一面11a側的金屬層12A、有機物層13A及黑化層14A進行蝕刻。另,圖1B中的X軸方向意指與各層的寬度方向平行的方向。又,圖1B中的Y軸方向意指與圖1B中的紙面垂直的方向。 Taking the case of using the conductive substrate of FIG. 1B as an example for description, first, a plurality of linear patterns parallel to the Y-axis direction in FIG. 1B are arranged at predetermined intervals along the X-axis direction, and the insulation The metal layer 12A, the organic layer 13A, and the blackened layer 14A on the side 11a of the flexible substrate 11 are etched. In addition, the X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. In addition, the Y-axis direction in FIG. 1B means a direction perpendicular to the paper surface in FIG. 1B.

接著,以平行於圖1B中X軸方向的複數個線狀圖案空出預定間隔沿Y軸方向配置的方式,對絕緣性基材11的另一面11b側的金屬層12B、有機物層13B及黑化層14B進行蝕刻。 Next, a plurality of linear patterns parallel to the X-axis direction in FIG. 1B are arranged along the Y-axis direction with a predetermined interval, and the insulating substrate 11 on the other surface 11b side of the metal layer 12B, organic layer 13B and black The chemical layer 14B is etched.

藉由以上操作,能夠形成如圖3、圖4A所示的具有網狀配線的導電性基板。另,絕緣性基材11兩面的蝕刻亦可同時進行。換言之,亦可同時進行金屬層12A、12B、有機物層13A、13B、黑化層14A、14B的蝕刻。又,在圖4A中,在配線31A、31B與絕緣性基材11之間進一步具有被圖案化成與配線31A、31B相同形狀之密接層的導電性基板,可藉由使用圖2B所示的導電性基板同樣地進行蝕刻來製作。 Through the above operations, it is possible to form a conductive substrate having mesh wiring as shown in FIGS. 3 and 4A. In addition, the etching on both sides of the insulating substrate 11 may be performed simultaneously. In other words, the metal layers 12A, 12B, the organic layers 13A, 13B, and the blackened layers 14A, 14B may be etched simultaneously. In addition, in FIG. 4A, a conductive substrate having an adhesion layer patterned into the same shape as the wiring 31A, 31B between the wiring 31A, 31B and the insulating base material 11 can be obtained by using the conductive substrate shown in FIG. 2B The sexual substrate is produced by etching in the same way.

圖3所示的具有網狀配線的導電性基板,亦可使用2片圖1A或圖2A所示的導電性基板而形成。若以使用圖1A的導電性基板來形成 的情形為例進行說明,則對2片圖1A所示的導電性基板,以平行於X軸方向的複數個線狀圖案空出預定間隔沿Y軸方向配置的方式,分別對金屬層12、有機物層13及黑化層14進行蝕刻。接著,可以利用上述蝕刻處理而形成在各導電性基板的線狀圖案相互交叉的方式對準方向將2片導電性基板貼合,藉此製成具備有網狀配線的導電性基板。將2片導電性基板貼合時貼合之面並無特別限定。例如,亦可將層疊有金屬層12等的圖1A中的表面A與未層疊有金屬層12等的圖1A中的另一面11b貼合,從而形成圖4B所示的構造。 The conductive substrate with mesh wiring shown in FIG. 3 can also be formed using two conductive substrates shown in FIG. 1A or FIG. 2A. If the conductive substrate of Figure 1A is used to form As an example, two conductive substrates as shown in FIG. 1A are arranged in the Y-axis direction with a plurality of linear patterns parallel to the X-axis direction at predetermined intervals, and the metal layers 12, The organic layer 13 and the blackened layer 14 are etched. Next, the two conductive substrates can be bonded together by aligning the directions so that the linear patterns formed on the conductive substrates intersect each other by the above-mentioned etching process, thereby making a conductive substrate provided with mesh wiring. The surface to be bonded when bonding two conductive substrates is not particularly limited. For example, the surface A in FIG. 1A on which the metal layer 12 and the like are laminated may be bonded to the other surface 11b in FIG. 1A on which the metal layer 12 and the like are not laminated to form the structure shown in FIG. 4B.

又,亦可例如將絕緣性基材11的未層疊有金屬層12等的圖1A中的另一面11b彼此貼合而成為剖面為圖4A所示的構造。 Moreover, for example, the other surface 11b in FIG. 1A in which the metal layer 12 etc. are not laminated|stacked of the insulating base material 11 may be bonded together, and it may become a cross section as the structure shown to FIG. 4A.

另,在圖4A、圖4B中,在配線31A、31B與絕緣性基材11之間進一步具有被圖案化成與配線31A、31B相同形狀之密接層的導電性基板,可藉由使用圖2A所示的導電性基板來代替圖1A所示的導電性基板進行製作。 In addition, in FIGS. 4A and 4B, between the wiring 31A, 31B and the insulating base material 11, a conductive substrate further having an adhesion layer patterned into the same shape as the wiring 31A, 31B can be used as shown in FIG. 2A Instead of the conductive substrate shown in FIG. 1A, the conductive substrate shown was produced.

圖3、圖4A、圖4B所示的具有網狀配線的導電性基板中的配線寬度,或配線間的距離並無特別限定,例如可根據流經配線的電流量等來選擇。 The wiring width or the distance between the wirings in the conductive substrate with mesh wiring shown in FIGS. 3, 4A, and 4B is not particularly limited, and can be selected according to the amount of current flowing through the wiring, for example.

又,在圖3、圖4A、圖4B中,示出了將直線形狀的配線組合而形成網狀配線(配線圖案)之例,但並不限定於該形態,構成配線圖案的配線可以為任意的形狀。例如,亦能以與顯示器的圖像之間不產生疊紋(干涉條紋)的方式,將構成網狀配線圖案的配線的形狀分別形成為呈鋸齒狀彎曲的線(鋸齒形直線)等各種形狀。 In addition, in FIGS. 3, 4A, and 4B, an example of combining linear wirings to form a mesh wiring (wiring pattern) is shown, but it is not limited to this form, and the wiring constituting the wiring pattern may be arbitrary shape. For example, it is also possible to form the shapes of the wires constituting the mesh wiring pattern into various shapes such as zigzag curved lines (saw-tooth straight lines) so that no moiré (interference fringes) occurs between the image on the display .

具有這樣由2層配線構成的網狀配線之導電性基板,例如可以較佳用作投影型電容式的觸控面板用的導電性基板。 The conductive substrate having the mesh wiring composed of such two-layer wiring can be preferably used as a conductive substrate for a projection type capacitive touch panel, for example.

依據以上的本實施形態的導電性基板,形成在絕緣性基材至少一面上的金屬層上配置有含有氮系有機物之有機物層,該有機物層面向黑化層的面之純水的接觸角為60°以下。因此,能夠製成黑化層的密接性高的導電性基板。又,由於在有機物層上配置了黑化層,因此在用於例如觸控面板等用途之情形時,能夠提高顯示器的目視辨認性。 According to the conductive substrate of the present embodiment described above, the metal layer formed on at least one surface of the insulating substrate is provided with an organic layer containing nitrogen-based organics, and the contact angle of the pure water on the surface of the organic layer facing the blackened layer is Below 60°. Therefore, it is possible to obtain a conductive substrate with high adhesion of the blackened layer. In addition, since the blackened layer is arranged on the organic layer, it is possible to improve the visibility of the display when it is used in applications such as touch panels.

(導電性基板之製造方法) (Method of manufacturing conductive substrate)

接著,對本實施形態的導電性基板之製造方法的一構成例進行說明。 Next, a configuration example of the manufacturing method of the conductive substrate of this embodiment will be described.

本實施形態的導電性基板之製造方法可具有以下步驟。 The manufacturing method of the conductive substrate of this embodiment can have the following steps.

金屬層形成步驟:在絕緣性基材的至少一個面上形成金屬層。 Metal layer forming step: forming a metal layer on at least one surface of the insulating base material.

有機物層形成步驟:在金屬層上形成含有氮系有機物的有機物層。 Organic substance layer forming step: forming an organic substance layer containing nitrogen-based organic substances on the metal layer.

黑化層形成步驟:在有機物層上形成黑化層。 Blackening layer formation step: forming a blackening layer on the organic layer.

並且,在有機物層形成步驟中,較佳以有機物層面向黑化層的面之純水的接觸角為60°以下的方式形成有機物層。 Furthermore, in the organic substance layer forming step, it is preferable to form the organic substance layer so that the contact angle of pure water on the surface of the organic substance layer facing the blackened layer is 60° or less.

以下對本實施形態的導電性基板之製造方法具體進行說明。 Hereinafter, the manufacturing method of the conductive substrate of this embodiment will be specifically described.

另,可利用本實施形態的導電性基板製造方法來適當地製造上述導電性基板。因此,除了以下說明的點以外,由於均可形成為與上述導電性基板的情況同樣的構成,因此省略部分說明。 In addition, the above-mentioned conductive substrate can be suitably manufactured using the conductive substrate manufacturing method of this embodiment. Therefore, except for the points described below, since it can be formed into the same configuration as in the case of the above-mentioned conductive substrate, part of the description is omitted.

可以預先準備用於金屬層形成步驟的絕緣性基材。使用的絕緣性基材的種類並無特別限定,如上所述可較佳使用會透射可見光的樹脂 基板(樹脂薄膜)或玻璃基板等透明基材。絕緣性基材亦可根據需要預先切割成任意的尺寸。 The insulating base material used in the metal layer formation step can be prepared in advance. The type of insulating substrate used is not particularly limited. As mentioned above, a resin that transmits visible light can be preferably used. Transparent substrates such as substrates (resin films) or glass substrates. The insulating base material may be cut into any size in advance as needed.

並且,如上所述,金屬層較佳具有金屬薄膜層。又,金屬層亦可具有金屬薄膜層與金屬鍍層。因此,金屬層形成步驟例如可具有利用乾式鍍覆法形成金屬薄膜層的步驟。又,金屬層形成步驟亦可具有利用乾式鍍覆法形成金屬薄膜層的步驟,及以該金屬薄膜層為供電層利用電鍍法(為濕式鍍覆法的一種)來形成金屬鍍層的步驟。 Also, as described above, the metal layer preferably has a metal thin film layer. In addition, the metal layer may also have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step may include, for example, a step of forming a metal thin film layer by a dry plating method. In addition, the metal layer forming step may also include a step of forming a metal thin film layer by a dry plating method, and a step of using the metal thin film layer as a power supply layer to use an electroplating method (a type of wet plating method) to form a metal plating layer.

作為於形成金屬薄膜層的步驟中所使用的乾式鍍覆法,並無特別限定,例如可使用蒸鍍法、濺鍍法或離子鍍法等。另,作為蒸鍍法,可較佳使用真空蒸鍍法。作為於形成金屬薄膜層的步驟中所使用的乾式鍍覆法,由於特別容易控制膜厚,因此更佳使用濺鍍法。 The dry plating method used in the step of forming the metal thin film layer is not particularly limited. For example, a vapor deposition method, a sputtering method, an ion plating method, etc. can be used. In addition, as the vapor deposition method, a vacuum vapor deposition method can be preferably used. As the dry plating method used in the step of forming the metal thin film layer, since it is particularly easy to control the film thickness, the sputtering method is preferably used.

接著對形成金屬鍍層的步驟進行說明。對於利用濕式鍍覆法形成金屬鍍層的步驟中的條件,例如電鍍處理的條件並無特別限定,採用根據通常方法的諸條件即可。當藉由電鍍處理來形成金屬鍍層之情形時,例如可藉由向注入有金屬鍍液的鍍槽供給形成有金屬薄膜層的基材,對電流密度或基材的輸送速度進行控制來形成。 Next, the steps of forming the metal plating layer will be described. Regarding the conditions in the step of forming the metal plating layer by the wet plating method, for example, the conditions of the electroplating treatment are not particularly limited, and conditions according to the usual method may be adopted. When the metal plating layer is formed by electroplating, it can be formed by, for example, supplying a substrate on which a metal thin film layer is formed to a plating tank filled with a metal plating solution, and controlling the current density or the transfer speed of the substrate.

對於可適用於金屬層的材料或金屬層的適合厚度等如上所述,因此在此省略其說明。 The materials applicable to the metal layer, the appropriate thickness of the metal layer, etc. are as described above, so the description thereof is omitted here.

接著,對有機物層形成步驟進行說明。 Next, the organic substance layer forming step will be described.

在有機物層形成步驟中,可在金屬層上形成含有氮系有機物的有機物層。 In the organic substance layer forming step, an organic substance layer containing a nitrogen-based organic substance may be formed on the metal layer.

如上所述,當在金屬層與黑化層之間設置有機物層時,藉由 以成為金屬層與有機物層結合的均勻被膜之方式供給氮系有機物溶液,而能夠提高黑化層的密接性。 As mentioned above, when the organic layer is placed between the metal layer and the blackened layer, by By supplying the nitrogen-based organic substance solution so as to become a uniform film in which the metal layer and the organic substance layer are bonded, the adhesion of the blackened layer can be improved.

有機物層的形成方法並無特別限定,可藉由在金屬層上供給、乾燥氮系有機物溶液而形成。 The method of forming the organic substance layer is not particularly limited, and it can be formed by supplying and drying a nitrogen-based organic substance solution on the metal layer.

作為供給氮系有機物溶液的方法並無特別限定,可以利用任意方法來進行供給。例如,可以藉由利用噴霧器等來塗布氮系有機物溶液,或藉由將形成有金屬層的絕緣性基材浸漬在氮系有機物溶液,而在金屬層上塗布含有構成有機物層之材料的溶液。 The method of supplying the nitrogen-based organic substance solution is not particularly limited, and it can be supplied by any method. For example, by applying a nitrogen-based organic solution using a sprayer or the like, or by immersing an insulating substrate formed with a metal layer in the nitrogen-based organic solution, a solution containing the material constituting the organic layer can be applied on the metal layer.

惟,當供給氮系有機物溶液時,較佳以成為金屬層與有機物層結合的均勻被膜之方式,對金屬層表面均勻地供給氮系有機物溶液。因此,較佳例如對金屬層形成黑化層之側的面,利用2種以上的複數種手段同時供給氮系有機物溶液,或者對金屬層形成黑化層之側的面,分成複數次來反復供給氮系有機物溶液。 However, when supplying the nitrogen-based organic solution, it is preferable to uniformly supply the nitrogen-based organic solution to the surface of the metal layer so as to form a uniform coating film combining the metal layer and the organic layer. Therefore, it is preferable, for example, to supply the nitrogen-based organic solution to the surface of the metal layer on the side where the blackened layer is formed by two or more methods at the same time, or divide the surface on the side where the blackened layer is formed on the metal layer to repeat Supply a nitrogen-based organic solution.

用於有機物層的氮系有機物並無特別限定,例如較佳含有1,2,3-苯并三唑或其衍生物。作為用於有機物層的氮系有機物,具體來說,例如可舉出1,2,3-苯并三唑、5-甲基-1H苯并三唑等。 The nitrogen-based organic substance used in the organic substance layer is not particularly limited, and for example, it preferably contains 1,2,3-benzotriazole or a derivative thereof. Specific examples of the nitrogen-based organic substance used for the organic substance layer include 1,2,3-benzotriazole, 5-methyl-1H benzotriazole, and the like.

另,在有機物層形成步驟中,例如可使用氮系有機物溶液(為含有上述氮系有機物的藥劑)來形成有機物層。 In addition, in the organic substance layer forming step, for example, a nitrogen-based organic substance solution (a drug containing the aforementioned nitrogen-based organic substance) can be used to form the organic substance layer.

作為含有用於有機物層的氮系有機物的藥劑,例如可較佳使用銅用的防鏽處理劑,作為市售的藥品,例如可較佳使用OPC-DEFENSER(商品名,奧野製藥工業股份有限公司)等。 As the agent containing the nitrogen-based organic substance used in the organic substance layer, for example, an antirust treatment agent for copper can be preferably used, and as a commercially available drug, for example, OPC-DEFENSER (trade name, Okuno Pharmaceutical Co., Ltd. )Wait.

對於向金屬層上供給氮系有機物溶液時的較佳條件由於已 經說明過,因此在此省略說明。 The better conditions for supplying nitrogen-based organic solution to the metal layer It has been explained, so the explanation is omitted here.

另,在塗布氮系有機物溶液後,為了除去所附著的剩餘氮系有機物溶液,亦可實施利用水將塗布有氮系有機物溶液的基材清洗的水洗步驟。 In addition, after the nitrogen-based organic solution is applied, in order to remove the adhered remaining nitrogen-based organic solution, a water washing step of washing the substrate coated with the nitrogen-based organic solution with water may be performed.

接著,對黑化層形成步驟進行說明。 Next, the step of forming the blackened layer will be described.

在黑化層形成步驟中,形成黑化層的方法並無特別限定,可利用任意方法來形成,例如可利用乾式法或濕式法來進行成膜。 In the blackening layer forming step, the method for forming the blackening layer is not particularly limited, and it can be formed by any method. For example, a dry method or a wet method can be used to form a film.

當利用乾式法將黑化層成膜之情形時,其具體的方法並無特別限定,例如可較佳使用濺鍍法、離子鍍法或蒸鍍法等乾式鍍覆法。特別是由於容易控制膜厚,因此更佳使用濺鍍法。另,亦可如上所述在黑化層添加選自碳、氧、氫、氮的1種以上的元素,此情形時可進而更佳使用反應性濺鍍法。 When the blackened layer is formed into a film by a dry method, the specific method is not particularly limited. For example, a dry plating method such as a sputtering method, an ion plating method, or an evaporation method can be preferably used. In particular, since it is easy to control the film thickness, the sputtering method is preferably used. In addition, as described above, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the blackened layer. In this case, the reactive sputtering method may be more preferably used.

又,如上所述,黑化層亦可利用電鍍法等濕式法來成膜。 In addition, as described above, the blackened layer may be formed by a wet method such as a plating method.

惟,在形成黑化層時,由於有機物層所含的氮系有機物會有溶解在鍍液中,並進入黑化層中,因而影響黑化層的色調或其他特性之虞,因此較佳利用乾式法來成膜。 However, when the blackened layer is formed, the nitrogen-based organic matter contained in the organic layer will dissolve in the plating solution and enter the blackened layer, which may affect the color tone or other characteristics of the blackened layer, so it is better to use Dry method to form film.

對於可適用於黑化層的材料或黑化層的適合厚度等由於已經說明過,因此在此省略說明。 Since the materials applicable to the blackening layer, the suitable thickness of the blackening layer, etc. have already been described, the description is omitted here.

在本實施形態的導電性基板之製造方法中,除了上述步驟以外,亦可進一步實施任意的步驟。 In the manufacturing method of the conductive substrate of this embodiment, in addition to the above-mentioned steps, you may implement further arbitrary steps.

例如當在絕緣性基材與金屬層之間形成密接層時,可實施在絕緣性基材形成金屬層的面上形成密接層的密接層形成步驟。當實施密接 層形成步驟之情形時,金屬層形成步驟可在密接層形成步驟之後實施,在金屬層形成步驟中,可於本步驟將金屬薄膜層形成在絕緣性基材上形成有密接層的基材。 For example, when an adhesive layer is formed between an insulating base material and a metal layer, a step of forming an adhesive layer in which the metal layer is formed on the insulating base material may be performed. When implementing close bonding In the case of the layer formation step, the metal layer formation step may be performed after the adhesion layer formation step. In the metal layer formation step, the metal thin film layer may be formed on the insulating substrate with the adhesion layer formed in this step.

在密接層形成步驟中,密接層的成膜方法並無特別限定,以較佳利用乾式鍍覆法來進行成膜。作為乾式鍍覆法,例如可較佳使用濺鍍法、離子鍍法或蒸鍍法等。當利用乾式法將密接層成膜之情形時,由於易於控制膜厚,因此更佳使用濺鍍法。另,亦可在密接層如上所述添加選自碳、氧、氫、氮的1種以上的元素,此情形時可進一步較佳使用反應性濺鍍法。 In the adhesive layer forming step, the method of forming the adhesive layer is not particularly limited, and it is preferable to form the film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, or a vapor deposition method can be preferably used. When the adhesive layer is formed into a film by a dry method, since it is easy to control the film thickness, the sputtering method is preferably used. In addition, one or more elements selected from carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer as described above. In this case, the reactive sputtering method can be more preferably used.

對於可適用於密接層的材料或密接層的較佳厚度等由於已經說明過,因此在此省略說明。 Since the materials applicable to the adhesive layer, the preferable thickness of the adhesive layer, etc. have already been explained, the explanation is omitted here.

由本實施形態的導電性基板製造方法得到的導電性基板例如可用於觸控面板等各種用途。並且,用於各種用途之情形時,較佳為本實施形態的導電性基板所含的金屬層、有機物層及黑化層已經圖案化。另,當設置密接層之情形時,較佳亦對密接層進行過圖案化。對於金屬層、有機物層及黑化層、視情況之密接層,例如可配合想要的配線圖案來進行圖案化,較佳為金屬層、有機物層及黑化層、視情況之密接層被圖案化成相同形狀。 The conductive substrate obtained by the conductive substrate manufacturing method of this embodiment can be used for various applications such as touch panels. In addition, when used in various applications, it is preferable that the metal layer, the organic layer, and the blackened layer included in the conductive substrate of this embodiment have been patterned. In addition, when the adhesive layer is provided, it is preferable to pattern the adhesive layer. For the metal layer, organic layer, blackened layer, and optionally the adhesive layer, for example, it can be patterned according to the desired wiring pattern, preferably the metal layer, organic layer, blackened layer, and optionally the adhesive layer is patterned Into the same shape.

因此,本實施形態的導電性基板之製造方法可具有對金屬層、有機物層及黑化層進行圖案化的圖案化步驟。另,當形成有密接層之情形時,圖案化步驟可為對密接層、金屬層、有機物層及黑化層進行圖案化的步驟。 Therefore, the manufacturing method of the conductive substrate of this embodiment may have a patterning step of patterning the metal layer, the organic layer, and the blackened layer. In addition, when the adhesion layer is formed, the patterning step may be a step of patterning the adhesion layer, the metal layer, the organic layer, and the blackened layer.

圖案化步驟的具體程序並無特別限定,可利用任意程序來實施。例如,如圖1A所示,當為在絕緣性基材11上層疊有金屬層12、有機物層13及黑化層14的導電性基板10A時,首先可實施在黑化層14上的表面A配置具有想要圖案的掩膜的掩膜配置步驟。接著,可實施向黑化層14的上面亦即配置有掩膜之面側供給蝕刻液的蝕刻步驟。 The specific procedure of the patterning step is not particularly limited, and can be implemented by any procedure. For example, as shown in FIG. 1A, in the case of a conductive substrate 10A on which a metal layer 12, an organic layer 13 and a blackened layer 14 are laminated on an insulating base material 11, the first can be implemented on the surface A on the blackened layer 14. A mask placement step of placing a mask with a desired pattern. Next, an etching step of supplying an etching solution to the upper surface of the blackened layer 14, that is, the side where the mask is disposed, can be performed.

在蝕刻步驟中使用的蝕刻液並無特別限定,可根據構成進行蝕刻之層的材料來任意選擇。例如,可按照每層來改變蝕刻液,又亦可利用相同的蝕刻液來蝕刻金屬層、有機物層及黑化層、視情況之密接層。 The etching liquid used in the etching step is not particularly limited, and can be arbitrarily selected according to the material constituting the layer to be etched. For example, the etching solution can be changed for each layer, and the same etching solution can also be used to etch the metal layer, the organic layer, the blackened layer, and the adhesion layer as appropriate.

又,如圖1B所示,對在絕緣性基材11的一面11a、另一面11b層疊有金屬層12A、12B、有機物層13A、13B、黑化層14A、14B的導電性基板10B亦可實施進行圖案化的圖案化步驟。此情形時,例如可實施在黑化層14A、14B上的表面A及表面B配置具有預定圖案之掩膜的掩膜配置步驟。接著,可實施向黑化層14A、14B上的表面A及表面B亦即配置有掩膜之面側供給蝕刻液的蝕刻步驟。 Moreover, as shown in FIG. 1B, it can also be implemented on a conductive substrate 10B in which metal layers 12A, 12B, organic layers 13A, 13B, and blackened layers 14A, 14B are laminated on one side 11a and the other side 11b of an insulating base material 11 The patterning step of patterning is performed. In this case, for example, a mask arrangement step of arranging a mask with a predetermined pattern on the surface A and the surface B on the blackened layers 14A and 14B can be implemented. Next, an etching step of supplying an etching solution to the surface A and the surface B on the blackened layers 14A and 14B, that is, the side where the mask is disposed, can be performed.

對於在蝕刻步驟中形成的圖案並無特別限定,可為任意的形狀。例如在圖1A所示的導電性基板10A的情況中,可如上所述以含有複數條直線或呈鋸齒狀彎曲的線(鋸齒形直線)的方式對金屬層12、有機物層13及黑化層14形成圖案。 The pattern formed in the etching step is not particularly limited, and may have any shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, the metal layer 12, the organic layer 13, and the blackened layer may be treated in a manner that contains a plurality of straight lines or zigzag-shaped curved lines (saw-tooth straight lines) as described above. 14 form a pattern.

又,在圖1B所示的導電性基板10B的情況中,可以成為網狀配線的方式在金屬層12A與金屬層12B形成圖案。此情形時,較佳以有機物層13A及黑化層14A成為與金屬層12A同樣的形狀,有機物層13B及黑化層14B成為與金屬層12B同樣的形狀之方式分別進行圖案化。 In addition, in the case of the conductive substrate 10B shown in FIG. 1B, the metal layer 12A and the metal layer 12B may be patterned as a mesh wiring. In this case, it is preferable to pattern each of the organic layer 13A and the blackened layer 14A into the same shape as the metal layer 12A, and the organic layer 13B and the blackened layer 14B have the same shape as the metal layer 12B.

又,例如亦可在圖案化工程中對上述導電性基板10A將金屬層12等進行圖案化後,實施將經圖案化的2片以上的導電性基板層疊的層疊步驟。進行層疊時,例如亦可藉由以各導電性基板的金屬層的圖案交叉之方式進行層疊,而得到具備有網狀配線的層疊導電性基板。 In addition, for example, after patterning the metal layer 12 or the like on the conductive substrate 10A in the patterning process, a lamination step of laminating two or more patterned conductive substrates may be performed. When performing lamination, for example, by lamination so that the pattern of the metal layer of each conductive substrate cross|intersects, you may obtain the laminated conductive substrate provided with mesh wiring.

對層疊之2片以上的導電性基板進行固定的方法並無特別限定,例如可利用接著劑等來進行固定。 The method of fixing two or more laminated conductive substrates is not particularly limited, and for example, it can be fixed with an adhesive or the like.

根據利用以上的本實施形態的導電性基板製造方法所得到的導電性基板,在絕緣性基材的至少一面上所形成的金屬層上配置有有機物層,該有機物層面向黑化層的面之純水的接觸角為60°以下,並含有氮系有機物。因此,能夠製成黑化層的密接性高的導電性基板。又,由於在有機物層上配置了黑化層,因此在用於例如觸控面板等用途之情形時能夠提高顯示器的目視辨認性。 According to the conductive substrate obtained by the conductive substrate manufacturing method of the present embodiment described above, an organic layer is disposed on the metal layer formed on at least one surface of the insulating base material, and the organic layer faces one of the surfaces of the blackened layer. The contact angle of pure water is 60° or less and contains nitrogen-based organic matter. Therefore, it is possible to obtain a conductive substrate with high adhesion of the blackened layer. In addition, since the blackened layer is arranged on the organic layer, the visibility of the display can be improved when used in applications such as touch panels.

<實施例> <Example>

以下,舉具體的實施例及比較例來進行說明,但本發明並不限定於這些實施例。 Hereinafter, specific examples and comparative examples will be described, but the present invention is not limited to these examples.

(評價方法) (Evaluation method)

首先,對所得到的導電性基板的評價方法進行說明。 First, the evaluation method of the obtained conductive substrate will be described.

(1)接觸角 (1) Contact angle

當在以下各實施例、比較例中製作所製作的導電性基板時,在有機物層形成後,黑化層形成前,對有機物層表面相對於純水的接觸角進行了測量。 When the produced conductive substrates were produced in each of the following Examples and Comparative Examples, after the formation of the organic layer and before the formation of the blackened layer, the contact angle of the surface of the organic layer with respect to pure water was measured.

測量使用自動接觸角儀(協和界面科學股份有限公司製,型 號:DM-301)來進行。 Automatic contact angle meter (manufactured by Kyowa Interface Science Co., Ltd., type No.: DM-301) to proceed.

在有機物層形成後,對有機物層形成黑化層的面供給1.0μL的純水,進行接觸角的測量。 After the organic substance layer was formed, 1.0 μL of pure water was supplied to the surface of the organic substance layer where the blackened layer was formed, and the contact angle was measured.

(密接性試驗) (Adhesion test)

如圖5所示,對形成至黑化層的導電性基板的黑化層,使用切割工具(Precision Gate&Tool Company公司製,Cross Cut Kit 1.0MM),以按1.0mm間隔互相平行的方式形成11條長度20mm的縱切割線51a。 As shown in Figure 5, for the blackened layer of the conductive substrate formed to the blackened layer, using a cutting tool (manufactured by Precision Gate & Tool Company, Cross Cut Kit 1.0MM), 11 strips were formed parallel to each other at 1.0 mm intervals. A longitudinal cutting line 51a with a length of 20 mm.

接著,使用相同的切割工具,以與先形成的縱切割線51a正交的方式,以按1.0mm間隔互相平行的方式形成11條長度20mm的橫切割線51b。 Next, using the same cutting tool, 11 horizontal cutting lines 51b with a length of 20 mm were formed so as to be orthogonal to the longitudinal cutting line 51a formed earlier and parallel to each other at 1.0 mm intervals.

藉由以上步驟,如圖5所示利用縱向、橫向各11條切割線,在黑化層形成格子狀切痕。 Through the above steps, as shown in FIG. 5, 11 cutting lines in the vertical and horizontal directions are used to form grid-like cuts in the blackened layer.

接著,以覆蓋格子狀切痕的方式黏貼密接度評價用帶(Elcometer公司製Elcometer99帶)後,充分摩擦。 Next, the adhesiveness evaluation tape (Elcometer 99 tape manufactured by Elcometer Co., Ltd.) was adhered so as to cover the grid-shaped cuts, and then rubbed sufficiently.

黏貼密接度評價用帶後經過30秒後,沿相對於測量面儘可能成180°的方向快速撕掉密接度評價用帶。 After 30 seconds have passed after the adhesiveness evaluation tape is attached, the adhesiveness evaluation tape is quickly torn off in a direction as close as possible to 180° with respect to the measurement surface.

在撕掉密接度評價用帶後,根據被格子狀縱切割線51a及橫切割線51b所包圍的圖5中的評價區域52內的在黑化層之下所形成露出了金屬層(有機物層)的面積,來對密接性進行評價。 After tearing off the adhesiveness evaluation tape, the metal layer (organic layer) is formed under the blackened layer in the evaluation area 52 in FIG. 5 surrounded by the grid-shaped vertical cutting line 51a and the horizontal cutting line 51b. ) Area to evaluate the adhesion.

當評價區域內的金屬層露出面積為0%時評價為5B,當多於0%小於5%時評價為4B,當大於等於5%小於15%時評價為3B,當大於等於15%小於35%時評價為2B,當大於等於35%小於65%時評價為1B,當大 於等於65%時評價為0B。關於該評價,0B為黑化層的密接性最低,5B為黑化層的密接性最高。 When the exposed area of the metal layer in the evaluation area is 0%, it is evaluated as 5B, when more than 0% and less than 5%, it is evaluated as 4B, when it is greater than or equal to 5% and less than 15%, it is evaluated as 3B, and when it is greater than or equal to 15% and less than 35 % Is evaluated as 2B, when it is greater than or equal to 35% and less than 65%, it is evaluated as 1B. It is evaluated as 0B when it is equal to 65%. Regarding this evaluation, 0B indicates that the blackened layer has the lowest adhesiveness, and 5B indicates that the blackened layer has the highest adhesiveness.

作為密接性試驗的結果,當為5B時能夠評價為黑化層的密接性足夠。 As a result of the adhesion test, it can be evaluated that the adhesion of the blackened layer is sufficient when it is 5B.

(試樣的製作條件) (Conditions for sample production)

作為實施例、比較例,按以下說明的條件製作導電性基板,利用上述的評價方法來進行評價。 As an example and a comparative example, a conductive substrate was produced under the conditions described below, and evaluated by the above-mentioned evaluation method.

[實施例1] [Example 1]

(密接層形成步驟) (Adhesive layer formation step)

將密接層成膜在縱500mm×橫500mm、厚度50μm的聚對酞酸乙二酯樹脂(PET)製的絕緣性基材的一個面上。另,對於用作絕緣性基材的聚對酞酸乙二酯樹脂製的絕緣性基材,當利用JIS K 7361-1所規定的方法對總光線透射率進行評價後,為97%。 The adhesion layer was formed into a film on one surface of an insulating substrate made of polyethylene terephthalate resin (PET) with a length of 500 mm × a width of 500 mm and a thickness of 50 μm. In addition, for an insulating substrate made of polyethylene terephthalate resin used as an insulating substrate, the total light transmittance was 97% when evaluated by the method specified in JIS K 7361-1.

在密接層形成步驟中,利用安裝了Ni-17重量%Cu合金的靶的濺鍍裝置,將含有氧的Ni-Cu合金層成膜作為密接層。以下對密接層的成膜步驟進行說明。 In the adhesion layer forming step, a sputtering device equipped with a target of Ni-17 wt% Cu alloy is used to form a Ni-Cu alloy layer containing oxygen as the adhesion layer. The film forming step of the adhesion layer will be described below.

將預先加熱至60℃除去水分的上述絕緣性基材設置在濺鍍裝置的腔室內。 The above-mentioned insulating base material previously heated to 60° C. to remove moisture was set in the chamber of the sputtering device.

接著,將腔室內排氣至1×10-3Pa後,導入氬氣與氧氣,使腔室內的壓力為1.3Pa。另,此時腔室內的環境以體積比計,30%為氧,其餘為氬。 Then, after exhausting the chamber to 1×10 -3 Pa, argon and oxygen are introduced to make the pressure in the chamber 1.3 Pa. In addition, at this time, the environment in the chamber is calculated by volume ratio, 30% is oxygen, and the rest is argon.

接著,在該環境下對靶供給電力,在絕緣性基材的一面上以 厚度成為20nm的方式將密接層成膜。 Next, power was supplied to the target in this environment, and the insulating substrate The adhesion layer was formed into a film so that the thickness became 20 nm.

(金屬層形成步驟) (Metal layer forming step)

在金屬層形成步驟中,實施了金屬薄膜層形成步驟與金屬鍍層形成步驟。 In the metal layer forming step, the metal thin film layer forming step and the metal plating layer forming step are implemented.

首先,對金屬薄膜層形成步驟進行說明。 First, the step of forming the metal thin film layer will be described.

在金屬薄膜層形成步驟中,使用在密接層形成步驟中在絕緣性基材上成膜有密接層者作為基材,在密接層上形成作為金屬薄膜層的銅薄膜層。 In the metal thin film layer forming step, a copper thin film layer as a metal thin film layer is formed on the adhesive layer by forming an adhesive layer on the insulating substrate in the adhesive layer forming step as the substrate.

對於金屬薄膜層,除了使用銅靶這一點以及將設置有基材的腔室內排氣後供給氬氣形成氬環境這一點以外,與密接層的情況同樣地利用濺鍍裝置進行成膜。 For the metal thin film layer, except for the use of a copper target and the fact that argon gas is supplied to form an argon atmosphere after exhausting the chamber in which the substrate is provided, the film is formed by a sputtering apparatus in the same manner as in the case of the adhesion layer.

以作為金屬薄膜層的銅薄膜層的厚度為150nm的方式進行成膜。 The film formation was performed so that the thickness of the copper thin film layer as the metal thin film layer was 150 nm.

接著,在金屬鍍層形成步驟中,形成銅鍍層作為金屬鍍層。對於銅鍍層,利用電鍍法以銅鍍層的厚度為0.5μm的方式進行成膜。 Next, in the metal plating layer forming step, a copper plating layer is formed as the metal plating layer. For the copper plating layer, a film was formed by the electroplating method so that the thickness of the copper plating layer was 0.5 μm.

(有機物層形成步驟) (Organic layer formation step)

在有機物層形成步驟中,於絕緣性基材上形成有密接層與金屬層的層疊體的金屬層上形成有機物層。 In the organic substance layer forming step, the organic substance layer is formed on the metal layer of the laminate of the adhesive layer and the metal layer formed on the insulating base material.

在有機物層形成步驟中,首先將上述層疊體浸漬在含有作為氮系有機物的1,2,3-苯并三唑的OPC-DEFENSER(奧野製藥工業股份有限公司製)溶液7秒鐘。另,以1,2,3-苯并三唑的濃度為3mL/L,浴溫為30℃、pH3的方式預先對所使用的OPC-DEFENSER溶液進行調整來使用。 In the organic substance layer forming step, first, the laminate was immersed in an OPC-DEFENSER (manufactured by Okuno Pharmaceutical Co., Ltd.) solution containing 1,2,3-benzotriazole as a nitrogen-based organic substance for 7 seconds. In addition, the OPC-DEFENSER solution used was adjusted in advance so that the concentration of 1,2,3-benzotriazole was 3 mL/L, the bath temperature was 30° C., and pH 3 was used.

接著,利用水洗將附著在金屬層的上面亦即金屬層面向密接層之面相反側的面以外的溶液除去後,進行乾燥,藉此在金屬層上形成有機物層。 Next, the solution adhered to the upper surface of the metal layer, that is, the surface opposite to the surface of the metal layer facing the adhesion layer, is removed by washing with water, and then dried to form an organic layer on the metal layer.

另,在有機物層形成步驟後,將基板的一部分切下,以供上述接觸角的評價。 In addition, after the organic substance layer formation step, a part of the substrate was cut off for the evaluation of the above-mentioned contact angle.

(黑化層形成步驟) (Blackening layer formation step)

在黑化層形成步驟中,在有機物層形成步驟中所形成的有機物層上,利用濺鍍法形成Ni-Cu層作為黑化層。 In the blackening layer forming step, on the organic substance layer formed in the organic substance layer forming step, a Ni—Cu layer is formed as a blackening layer by a sputtering method.

在黑化層形成步驟中,利用安裝有Ni-35重量%Cu合金之靶的濺鍍裝置,將Ni-Cu合金層成膜作為黑化層。以下對黑化層的成膜步驟進行說明。 In the blackening layer forming step, a sputtering device equipped with a target of Ni-35% by weight Cu alloy is used to form a Ni-Cu alloy layer as a blackening layer. The film forming step of the blackened layer will be described below.

首先,將在絕緣性基材上層疊了密接層、金屬層及有機物層的層疊體設置在濺鍍裝置的腔室內。 First, a laminate in which an adhesive layer, a metal layer, and an organic layer are laminated on an insulating base material is set in a chamber of a sputtering device.

接著,將腔室內排氣至1×10-3Pa後,導入氬氣,使腔室內的壓力為1.3Pa。 Next, after evacuating the chamber to 1×10 -3 Pa, argon gas is introduced to make the pressure in the chamber 1.3 Pa.

接著,在該環境下向靶供給電力,在有機物層上成膜厚度為30nm的黑化層。 Next, power was supplied to the target under this environment, and a blackened layer having a thickness of 30 nm was formed on the organic layer.

藉由以上步驟,得到了在金屬層的上面,亦即金屬層面向密接層之面相反側的面經由有機物層形成黑化層,並在絕緣性基材上依序層疊有密接層、金屬層、有機物層、黑化層的導電性基板。 Through the above steps, a blackened layer is formed on the top of the metal layer, that is, on the side opposite to the side of the metal layer facing the adhesion layer, through the organic layer, and the adhesion layer and the metal layer are sequentially laminated on the insulating substrate , Organic layer, blackened layer of conductive substrate.

對於所得到的導電性基板,實施密接性試驗。 With respect to the obtained conductive substrate, an adhesion test was performed.

結果如表1所示。 The results are shown in Table 1.

[實施例2、實施例3] [Example 2, Example 3]

除了在形成有機物層時藉由改變OPC-DEFENSER溶液的濃度、浴溫或pH值而使有機物層表面的接觸角不同這一點以外,與實施例1同樣地製作導電性基板。 A conductive substrate was produced in the same manner as in Example 1, except that the contact angle of the surface of the organic layer was changed by changing the concentration, bath temperature, or pH of the OPC-DEFENSER solution when forming the organic layer.

對於所得到的導電性基板,實施上述密接性試驗。 With respect to the obtained conductive substrate, the aforementioned adhesion test was carried out.

結果如表1所示。 The results are shown in Table 1.

[比較例1] [Comparative Example 1]

除了在形成有機物層時藉由改變OPC-DEFENSER溶液的濃度、浴溫或pH值而使有機物層表面的接觸角不同這一點以外,與實施例1同樣地製作導電性基板。 A conductive substrate was produced in the same manner as in Example 1, except that the contact angle of the surface of the organic layer was changed by changing the concentration, bath temperature, or pH of the OPC-DEFENSER solution when forming the organic layer.

對於所得到的導電性基板,實施上述密接性試驗。 With respect to the obtained conductive substrate, the aforementioned adhesion test was carried out.

結果如表1所示。 The results are shown in Table 1.

Figure 105123738-A0202-12-0031-1
Figure 105123738-A0202-12-0031-1

將表1所示的有機物層的接觸角與黑化層的密接性評價結果的關係視圖化而得者示於圖6。 Figure 6 shows the relationship between the contact angle of the organic layer shown in Table 1 and the adhesion evaluation result of the blackened layer.

從表1、圖6的結果可以明確的確認,對於有機物層表面的接觸角為60°以下的實施例1~實施例3,密接性試驗的結果為5B。相對於此,對於有機物層表面的接觸角超過60°的比較例1~比較例3,密接性試驗的結果為3B或4B,確認了黑化層的剝離。 It can be clearly confirmed from the results of Table 1 and FIG. 6 that for Examples 1 to 3 in which the contact angle on the surface of the organic layer is 60° or less, the result of the adhesion test is 5B. In contrast, in Comparative Examples 1 to 3 in which the contact angle of the organic layer surface exceeded 60°, the result of the adhesion test was 3B or 4B, and the peeling of the blackened layer was confirmed.

根據以上結果能夠確認,對於在金屬層與黑化層之間形成了有機物層的導電性基板,藉由將有機物層表面的接觸角設為60°以下,從而能夠製成黑化層的密接性高的導電性基板。 Based on the above results, it can be confirmed that, for a conductive substrate with an organic layer formed between the metal layer and the blackened layer, by setting the contact angle of the organic layer surface to 60° or less, the adhesion of the blackened layer can be achieved High conductivity substrate.

以上藉由實施形態及實施例等對導電性基板、導電性基板之製造方法進行了說明,但本發明並不限定上述實施形態及實施例等。在申請專利範圍所記載的本發明的主旨的範圍內,可進行各種變形、變更。 The conductive substrate and the method of manufacturing the conductive substrate have been described above with the embodiment and the examples. However, the present invention is not limited to the above-mentioned embodiment and examples. Various modifications and changes can be made within the scope of the gist of the present invention described in the scope of the patent application.

本申請案係主張基於2015年7月31日向日本特許廳申請的申請第2015-152896號的優先權,將該申請第2015-152896號的全部內容引用於本國際申請。 This application claims priority based on the application No. 2015-152896 filed with the Japan Patent Office on July 31, 2015, and the entire content of the application No. 2015-152896 is cited in this international application.

Claims (4)

一種導電性基板,具有:絕緣性基材;形成在該絕緣性基材的至少一個面上之金屬層;形成在該金屬層上且含有氮系有機物之有機物層;以及形成在該有機物層上之黑化層,該有機物層面向該黑化層的面之純水的接觸角為60°以下。 A conductive substrate having: an insulating base material; a metal layer formed on at least one surface of the insulating base material; an organic layer containing nitrogen-based organics formed on the metal layer; and formed on the organic layer For the blackened layer, the contact angle of pure water on the surface of the organic layer facing the blackened layer is 60° or less. 如申請專利範圍第1項之導電性基板,其中,該氮系有機物含有1,2,3-苯并三唑或其衍生物。 Such as the conductive substrate of the first item in the scope of patent application, wherein the nitrogen-based organic substance contains 1,2,3-benzotriazole or its derivatives. 一種導電性基板之製造方法,其具有下述步驟:金屬層形成步驟:在絕緣性基材的至少一個面上形成金屬層;有機物層形成步驟:在該金屬層上形成含有氮系有機物的有機物層;以及黑化層形成步驟:在該有機物層上形成黑化層,在該有機物層形成步驟中,以該有機物層面向該黑化層的面之純水的接觸角為60°以下的方式形成該有機物層。 A method for manufacturing a conductive substrate, which has the following steps: a metal layer forming step: forming a metal layer on at least one surface of an insulating substrate; an organic layer forming step: forming an organic substance containing a nitrogen-based organic substance on the metal layer And a blackening layer forming step: forming a blackening layer on the organic layer, in the organic layer forming step, the contact angle of the pure water of the surface of the organic layer facing the blackening layer is 60° or less The organic layer is formed. 如申請專利範圍第3項之導電性基板之製造方法,其中,該氮系有機物含有1,2,3-苯并三唑或其衍生物。 For example, the manufacturing method of the conductive substrate of the third item of the scope of patent application, wherein the nitrogen-based organic substance contains 1,2,3-benzotriazole or its derivatives.
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