TW201718254A - Conductive substrate and conductive substrate manufacturing method - Google Patents

Abstract

A conductive substrate is provided which comprises an insulating substrate, a metal layer formed on at least one surface of the insulating substrate, an organic layer formed on the metal layer and containing nitrogen-based organic material, and a blackened layer formed on the organic layer, wherein the contact angle of pure water on the surface of the organic layer opposite to the blackened layer is less than or equal to 60 DEG.

Description

Conductive substrate, method of manufacturing conductive substrate

The present invention relates to a conductive substrate and a method of producing the conductive substrate.

The capacitive touch panel converts position information of an object approaching on the surface of the panel into an electrical signal by detecting a change in capacitance caused by an object approaching the surface of the panel. Since the conductive substrate used for the capacitive touch panel is provided on the surface of the display, the material of the conductive layer of the conductive substrate is required to have a low reflectance and is difficult to visually confirm.

Therefore, as a material for the conductive layer of the capacitive touch panel, a wiring having a low reflectance and difficult to visually recognize is formed on the transparent substrate or the transparent film.

For example, Patent Document 1 discloses a capacitive digital touch panel in which a touch panel portion is composed of a plurality of transparent sheet electrodes on a PET film which are printed with a signal pattern and a GND pattern using an ITO film.

However, in recent years, a large-screen display having a touch panel has been developed, and correspondingly, a conductive substrate such as a transparent conductive film for a touch panel is required to have a large area. However, ITO has a problem that it is not suitable for a large panel because of its high resistance value and deterioration of signals.

Therefore, as a material of the conductive layer, it is being studied to use a metal such as copper instead of ITO. However, since the metal has a metallic luster, there is a problem that the visibility of the display is lowered by reflection. Therefore, a conductive substrate is being studied which is formed with a metal layer and A blackening layer that reflects light on the surface of the metal layer, wherein the metal layer is a conductive layer using a metal such as copper.

Patent Document 1: Japanese Laid-Open Patent Publication No. 2004-213114

However, in the case of a conductive substrate, for example, when a metal layer and a blackened layer are formed by another device, after the metal layer is formed, a metal layer may be sought to be formed before the blackening layer is formed thereon. The surface is rusty. Therefore, in consideration of the rust-preventing treatment for forming an organic layer on the surface of the metal layer, if the surface of the surface subjected to the rust-preventing treatment of the metal layer is formed into a blackened layer, the adhesion between the blackened layer and the metal layer is lowered. problem.

In view of the above problems of the prior art, it is an object of the present invention to provide a conductive substrate in which an organic layer is formed between a metal layer and a blackening layer, and the blackening layer has high adhesion.

In order to solve the above problems, in one aspect of the invention, a conductive substrate having an insulating substrate, a metal layer formed on at least one surface of the insulating substrate, and a metal layer formed thereon are provided An organic layer containing a nitrogen-based organic substance and a blackened layer formed on the organic layer, wherein a contact angle of the organic layer facing the surface of the blackened layer is 60° or less.

According to an aspect of the invention, it is possible to provide a conductive substrate in which an organic layer is formed between a metal layer and a blackening layer, and the blackening layer has high adhesion.

10A, 10B, 20A, 20B, 30‧‧‧ conductive substrate

11‧‧‧Insulating substrate

12, 12A, 12B‧‧‧ metal layer

13, 13A, 13B, 32A, 32B‧‧‧ organic layers

14, 14A, 14B, 33A, 33B‧‧‧ blackening layer

Fig. 1A is a cross-sectional view showing a conductive substrate according to an embodiment of the present invention.

Fig. 1B is a cross-sectional view showing a conductive substrate according to an embodiment of the present invention.

Fig. 2A is a cross-sectional view showing a conductive substrate according to an embodiment of the present invention.

Fig. 2B is a cross-sectional view showing a conductive substrate according to an embodiment of the present invention.

Fig. 3 is a plan view showing a conductive substrate including a mesh wiring according to an embodiment of the present invention.

Fig. 4A is a cross-sectional view taken along line A-A' of Fig. 3;

Fig. 4B is a cross-sectional view taken along line A-A' of Fig. 3;

Fig. 5 is an explanatory view of a dicing line formed when an adhesion test is performed in Examples and Comparative Examples.

Fig. 6 is an explanatory view showing the relationship between the contact angle of the organic layer and the adhesion in the examples and the comparative examples.

Hereinafter, an embodiment of the conductive substrate and the method for producing the conductive substrate of the present invention will be described.

(conductive substrate)

The conductive substrate of the present embodiment may have an insulating base material, a metal layer formed on at least one surface of the insulating base material, an organic material layer formed on the metal layer and containing a nitrogen-based organic substance, and black formed on the organic substance layer. Layer. Further, the contact angle of the pure water of the organic layer facing the surface of the blackened layer can be made 60 or less.

In addition, the conductive substrate in the present embodiment includes a substrate having a metal layer, an organic layer, and a blackened layer on the surface of the insulating substrate before patterning the metal layer or the like, and patterning the metal layer or the like. The substrate is also a wiring substrate.

Hereinafter, each member included in the conductive substrate will be described below.

The insulating substrate is not particularly limited, and a transparent substrate such as a resin substrate (resin film) or a glass substrate that transmits visible light can be preferably used.

As a material of the resin substrate that transmits visible light, for example, a polyamide resin, a polyethylene terephthalate resin, a polyethylene naphthalate resin, a cycloolefin resin, or a cycloolefin resin can be preferably used. A resin such as a polyimide resin or a polycarbonate resin. In particular, as a material of a resin substrate that transmits visible light, PET (polyethylene terephthalate), COP (cycloolefin polymer), PEN (polyethylene naphthalate), polyphthalate can be more preferably used. Amines, polyamines, polycarbonates, and the like.

The thickness of the insulating base material is not particularly limited, and can be arbitrarily selected depending on the strength, capacitance, light transmittance, and the like required as the conductive substrate. The thickness of the insulating base material can be, for example, 10 μm or more and 200 μm or less. In particular, when it is used for a touch panel, the thickness of the insulating base material is preferably 20 μm or more and 120 μm or less, and more preferably 20 μm or more and 100 μm or less. In the case of use for a touch panel, for example, when the thickness of the entire display is to be thinned, the thickness of the insulating base material is preferably 20 μm or more and 50 μm or less.

The total light transmittance of the insulating substrate is preferably higher, and for example, the total light transmittance is preferably 30% or more, more preferably 60% or more. By making the total light transmittance of the insulating base material into the above range, it is possible to sufficiently ensure the visibility of the display, for example, when used for a touch panel.

Further, the total light transmittance of the insulating base material can be evaluated by the method specified in JIS K 7361-1.

Next, the metal layer will be described.

The material constituting the metal layer is not particularly limited, and a material having electrical conductivity depending on the use may be selected. For example, the material constituting the metal layer is preferably Cu and selected from the group consisting of Ni, Mo, Ta, Ti, V, Cr, A copper alloy of at least one of Fe, Mn, Co, and W, or a material containing copper. Further, the metal layer may be a copper layer made of copper.

The method of forming the metal layer on at least one surface of the insulating base material is not particularly limited, and in order to reduce the light transmittance, it is preferred not to provide an adhesive between the insulating base material and the metal layer. In other words, the metal layer is preferably formed directly on at least one side of the insulating substrate. Further, when an adhesion layer is disposed between the insulating base material and the metal layer as described below, the metal layer is preferably formed directly on the upper surface of the adhesion layer.

In order to form a metal layer directly on the upper surface of an insulating substrate or the like, the metal layer preferably has a metal thin film layer. Further, the metal layer may have a metal thin film layer and a metal plating layer.

For example, a metal thin film layer can be formed on an insulating substrate by a dry plating method, and the metal thin film layer can be used as a metal layer. Thereby, the metal layer can be formed directly on the insulating base material without passing through the adhesive. Further, as the dry plating method, for example, a sputtering method, a vapor deposition method, an ion plating method, or the like can be preferably used.

Further, when the film thickness of the metal layer is increased, the metal thin film layer may be used as the power supply layer by a plating method (one of the wet plating methods) to form a metal plating layer, thereby forming a metal having a metal thin film layer and a metal plating layer. Floor. By providing the metal layer with the metal thin film layer and the metal plating layer, it is also possible in this case to directly form the metal layer on the insulating substrate without passing through the adhesive.

Alternatively, the metal layer can be formed directly on the adhesion layer in the same manner when the metal layer is formed on the adhesion layer.

The thickness of the metal layer is not particularly limited, and when the metal layer is used as a wiring, it is rootable. It is arbitrarily selected according to the magnitude of the current supplied to the wiring, the wiring width, and the like.

However, when the thickness of the metal layer is increased, there is a problem in that when etching is performed to form a wiring pattern, etching takes time, and side etching is likely to occur, and it is difficult to form a thin line. Therefore, the thickness of the metal layer is preferably 5 μm or less, more preferably 3 μm or less.

In addition, the thickness of the metal layer is preferably 50 nm or more, more preferably 60 nm or more, and still more preferably 150 nm or more, from the viewpoint of particularly reducing the impedance value of the conductive substrate and allowing the current to be sufficiently supplied.

Further, when the metal layer has a metal thin film layer and a metal plating layer as described above, the total thickness of the metal thin film layer and the thickness of the metal plating layer are preferably in the above range.

In the case where the metal layer is composed of a metal thin film layer or the metal thin film layer and the metal plating layer, the thickness of the metal thin film layer is not particularly limited, and for example, it is preferably 50 nm or more and 500 nm or less. .

The metal layer can be patterned into a desired wiring pattern for use as wiring, for example, as described below. Further, since the metal layer can lower the resistance value than the ITO which has been conventionally used as a transparent conductive film, the metal layer can be provided to reduce the resistance value of the conductive substrate.

Next, the organic layer will be described.

The organic layer may be formed on the surface of the metal layer facing the blackening layer (which will be described later). Therefore, when it is a conductive substrate, it can be arrange|positioned between a metal layer and a blackening layer.

By forming the organic layer on the upper surface of the metal layer, it is possible to prevent rust or the like on the surface of the metal layer.

The organic layer may contain a nitrogen-based organic substance. Further, the nitrogen-based organic substance used for the organic layer preferably contains, for example, 1,2,3-benzotriazole or a derivative thereof. As the nitrogen system used for the organic layer Specific examples of the organic substance include 1,2,3-benzotriazole and 5-methyl-1H benzotriazole.

For example, OPC-DEFENSER (trade name, Okuno Pharmaceutical Co., Ltd.) can be preferably used as a commercially available drug as a drug containing a nitrogen-based organic substance for the organic layer. Wait.

As described above, if a blackening layer is formed after the organic layer is formed, the adhesion of the blackening layer may be insufficient. Therefore, the inventors of the present invention have studied the method of improving the adhesion of the blackened layer, and found that the blackening layer can be improved by making the contact angle of the pure water of the surface of the organic layer facing the blackened layer 60° or less. The adhesion is completed and the present invention has been completed.

According to the study by the inventors of the present invention, when a uniform film in which a metal layer and an organic layer are combined is not formed, and the organic substance is only deposited on the surface of the metal layer, the adhesion of the blackened layer may be insufficient. Further, when such an organic substance is deposited on the surface of the metal layer, the contact angle of the surface of the organic substance facing the blackening layer with respect to pure water exceeds 60°.

On the other hand, when the organic layer is formed, in the case where a uniform film in which the metal layer and the organic layer are formed can be formed, the contact angle of the pure water of the surface of the organic layer facing the blackened layer is 60 or less. Further, by forming a uniform film in which the metal layer and the organic layer are combined, it is possible to improve the adhesion of the blackened layer when the blackened layer is formed on the organic layer.

Therefore, it is preferable that the contact angle of the pure water of the surface of the organic layer facing the blackening layer is 60 or less as described above.

The method of making the contact angle of the pure water of the surface of the organic layer facing the blackening layer to 60° or less is not particularly limited, and the surface of the metal layer is supplied as a uniform film which is a metal layer and an organic layer. A method of a nitrogen-based organic solution of an organic layer material.

The method of supplying the nitrogen-based organic substance solution is not particularly limited, and any method can be used. Method to supply. For example, a solution containing a material constituting the organic layer can be applied onto the metal layer by coating the nitrogen-based organic material solution with a spray or by immersing the insulating substrate on which the metal layer is formed in the nitrogen-based organic material solution.

However, when a nitrogen-based organic substance solution is supplied, it is preferred to uniformly supply a nitrogen-based organic substance solution to the surface of the metal layer so as to form a uniform film in which the metal layer and the organic layer are combined. Therefore, for example, it is preferable to supply the nitrogen-based organic substance solution to the surface on the side where the metal layer is formed with the blackening layer by two or more kinds of means, or to form the side of the blackening layer on the metal layer, and to repeat the supply in plural times. A nitrogen-based organic solution.

In addition, the conditions of the nitrogen-based organic substance solution when the nitrogen-based organic substance solution is supplied to the surface of the black layer of the metal layer are not particularly limited, and may be arbitrarily selected depending on the type of the nitrogen-based organic substance solution or the like. Specifically, the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution to be used in the formation of the organic layer is not particularly limited, and can be arbitrarily selected in consideration of the content or workability of the nitrogen-based organic substance in the target organic layer. .

The lower limit of the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution is preferably 1 mL/L or more, and more preferably 2 mL/L or more. The upper limit is preferably 4 mL/L or less. This is because the uniform film of the metal layer and the organic layer can be more reliably formed by setting the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution to 1 mL/L or more. However, when the concentration of the nitrogen-based organic substance in the nitrogen-based organic substance solution exceeds 4 mL/L, the remaining solution cannot be removed by washing with water, and therefore it is preferably 4 mL/L or less.

In addition, the temperature of the nitrogen-based organic substance solution when the nitrogen-based organic substance solution is supplied to the surface of the metal layer is not particularly limited, and can be arbitrarily selected in consideration of the viscosity, workability, reactivity, and the like of the solution. For example, it is preferably 10 ° C or higher, more preferably 20 ° C or higher. However, if the temperature rises, Since the nitrogen-containing organic substance contained is reacted with other substances, it is preferably 40 ° C or lower.

Further, the pH of the nitrogen-based organic substance solution is not particularly limited, and may be selected in consideration of the type of the nitrogen-based organic substance to be used or the reactivity of the solution. For example, the pH of the nitrogen-based organic substance solution is preferably 2 or more, more preferably It is 3 or more. However, if the pH is increased, the content of the nitrogen-based organic substance in the film is lowered, so that the pH of the nitrogen-based organic substance solution is preferably 4 or less.

The length of the treatment time for supplying the nitrogen-based organic substance solution to the surface of the metal layer and reacting it is not particularly limited, and may be arbitrarily selected depending on the type of the nitrogen-based organic substance solution to be used, the thickness of the organic substance layer to be formed, and the like. For example, the treatment time is preferably 5 seconds or longer, more preferably 6 seconds or longer. However, if the processing time is too long, the productivity is lowered, so it is preferably 10 seconds or shorter.

Moreover, the inventors of the present invention have also found that by disposing an organic substance layer containing a nitrogen-based organic substance between the metal layer and the blackening layer, the reflectance of the conductive substrate can be suppressed.

In order to suppress the reflectance of the conductive substrate, the content of the nitrogen-based organic substance in the organic layer is preferably 0.2 μg/cm ² or more, and more preferably 0.3 μg/cm ² or more.

In the study by the inventors of the present invention, the content of the nitrogen-based organic material in the organic layer is 0.2 μg/cm ² or more, whereby the reflectance of the conductive substrate can be greatly suppressed. Further, when the content of the nitrogen-based organic substance in the organic layer is increased, the a* value and the b* value when converting the color of the blackened layer into the CIE (L*a*b*) color system can be reduced, and in particular, the conductive can be made conductive. The wiring of the substrate is not conspicuous, and therefore it is preferable.

The upper limit of the content of the nitrogen-based organic substance in the organic layer is not particularly limited. However, in order to increase the content of the nitrogen-based organic substance in the organic layer, the concentration of the nitrogen-based organic substance solution used in forming the organic layer may be increased, or the supply time of the nitrogen-based organic substance solution may be prolonged. Therefore, when the content of the nitrogen-based organic substance in the organic layer is excessively increased, the workability of the nitrogen-based organic substance solution is lowered, or the time required for forming the organic substance layer is prolonged, and the productivity is lowered. Therefore, the content of the nitrogen-based organic substance in the organic layer is preferably, for example, 0.5 μg/cm ² or less.

Next, the blackening layer will be described.

A blackening layer may be formed on top of the organic layer.

The material of the blackening layer is not particularly limited as long as it is a material capable of suppressing light reflection on the surface of the metal layer.

The blackening layer preferably contains, for example, at least one metal selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the blackening layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen.

Further, the blackening layer may contain a metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. In this case, the blackening layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen. In this case, as the metal alloy containing at least two or more metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, Cu-Ti- can be preferably used. Fe alloy, Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy. In particular, a Ni-Cu alloy can be further preferably used.

The method for forming the blackening layer is not particularly limited, and it can be formed by any method. For example, a dry method or a wet method can be used to form a film.

When the blackening layer is formed into a film by a dry method, the specific method is not particularly limited. For example, a dry plating method such as a sputtering method, an ion plating method, or a vapor deposition method can be preferably used. Since the film thickness is easily controlled by the dry method in which the blackened layer is formed, it is more preferable to use a sputtering method. Also, in The blackening layer is added with one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen as described above. In this case, a reactive sputtering method can be more preferably used.

When the blackened layer is formed by a reactive sputtering method, a target containing a metal species constituting the blackening layer can be used as a target. When the blackening layer contains an alloy, the target may be used for each metal species contained in the blackening layer, an alloy may be formed on the surface of the film forming body such as a substrate, or a metal contained in the blackening layer may be used in advance. A target that has been alloyed.

Further, when the blackening layer contains one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen, these may be added to the blackening layer by adding in advance to the environment in which the blackening layer is formed into a film. . For example, when carbon is added to the blackening layer, carbon monoxide gas and/or carbon dioxide gas may be added in advance in the environment in which sputtering is performed, and when oxygen is added to the blackening layer, oxygen may be added in advance. In the environment at the time of sputtering, when hydrogen is added to the blackening layer, hydrogen and/or water may be added in advance in the environment in which sputtering is performed, and when nitrogen is added to the blackening layer, nitrogen may be added in advance. In the environment when sputtering is performed. One or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen may be added to the blackened layer by adding such a gas to the inert gas when the blackened film is formed. Further, argon is preferably used as the inert gas.

When the blackened layer is formed by a wet method, the plating solution can be used depending on the material of the blackened layer, and for example, it can be formed by electroplating.

The blackening layer can be formed by any method of the dry method or the wet method as described above, but since the black-based layer is formed, the nitrogen-based organic substance contained in the organic layer is dissolved in the plating solution and enters the blackening layer. In order to affect the hue or other characteristics, it is preferable to use a dry method to form a film.

The thickness of the blackening layer is not particularly limited, and is, for example, preferably 15 nm or more, and more preferably It is 25 nm or more. This is because when the thickness of the blackening layer is thin, the light reflection on the surface of the metal layer may not be sufficiently suppressed. Therefore, it is preferable that the blackening layer has a thickness of 15 nm or more as described above. The light reflection on the surface of the metal layer is suppressed.

The upper limit of the thickness of the blackened layer is not particularly limited, and even if it is thickened to a thickness equal to or greater than necessary, the time required for film formation or the time required for etching when wiring is formed becomes long, resulting in an increase in cost. Therefore, the thickness of the blackening layer is preferably set to 70 nm or less, more preferably 50 nm or less.

Further, the conductive substrate may be provided with any layer other than the above-described insulating base material, metal layer, organic layer, and blackened layer. For example, an adhesive layer can be provided.

A configuration example of the adhesion layer will be described.

Although the metal layer can be formed on the insulating base material as described above, when the metal layer is directly formed on the insulating base material, the adhesion between the insulating base material and the metal layer may be insufficient. Therefore, when a metal layer is directly formed on the upper surface of the insulating base material, the metal layer may be peeled off from the insulating base material during the manufacturing process or at the time of use.

Therefore, in the conductive substrate of the present embodiment, in order to improve the adhesion between the insulating base material and the metal layer, an adhesive layer can be disposed on the insulating base material.

By disposing the adhesion layer between the insulating base material and the metal layer, the adhesion between the insulating base material and the metal layer can be improved, and the metal layer can be prevented from being peeled off from the insulating base material.

Moreover, the adhesion layer can also function as a blackening layer. Therefore, it is also possible to suppress light reflection of the metal layer due to light from the lower side of the metal layer, that is, the side of the insulating substrate.

The material constituting the adhesion layer is not particularly limited, and may be based on the adhesion between the insulating substrate and the metal layer or the degree of suppression of light reflection on the surface of the metal layer, and the conductivity. The degree of stability of the use environment (for example, humidity or temperature) of the substrate is arbitrarily selected.

The adhesion layer preferably contains, for example, at least one metal selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Further, the adhesion layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen.

Further, the adhesion layer may contain a metal alloy containing at least two metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn. Even in this case, the adhesion layer may further contain one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen. In this case, as the metal alloy containing at least two metals selected from the group consisting of Ni, Zn, Mo, Ta, Ti, V, Cr, Fe, Co, W, Cu, Sn, and Mn, for example, Cu-Ti can be preferably used. -Fe alloy or Cu-Ni-Fe alloy, Ni-Cu alloy, Ni-Zn alloy, Ni-Ti alloy, Ni-W alloy, Ni-Cr alloy, Ni-Cu-Cr alloy. In particular, a Ni-Cu alloy can be more preferably used.

The film formation method of the adhesion layer is not particularly limited, and it is preferable to form a film by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by a dry method, it is easy to control the film thickness, and therefore it is more preferable to use a sputtering method. Further, one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen as described above may be added to the adhesion layer, and in this case, a reactive sputtering method can be more preferably used.

When the adhesion layer contains one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen, one or more selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen may be added to the environment in which the adhesion layer is formed. The element of the gas is added to the adhesion layer. For example, when carbon is added to the adhesion layer, carbon monoxide gas and/or carbon dioxide gas may be added in advance in the environment in which dry plating is performed, and when dry plating is performed in the case where oxygen is added to the adhesion layer, Adding oxygen to the environment, when hydrogen is added to the adhesion layer, it can be pre-empted in the environment of dry plating. When hydrogen and/or water is added, when nitrogen is added to the adhesion layer, nitrogen gas may be added to the environment in the case of dry plating in advance.

A gas containing one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen is preferably added to an inert gas as an ambient gas during dry plating. The inert gas is not particularly limited, and for example, argon can be preferably used.

By forming the adhesion layer by the dry plating method as described above, the adhesion between the insulating base material and the adhesion layer can be improved. Further, since the adhesion layer can contain, for example, a metal as a main component, the adhesion to the metal layer is also high. Therefore, by disposing the adhesion layer between the insulating base material and the metal layer, peeling of the metal layer can be suppressed.

The thickness of the adhesion layer is not particularly limited, and is preferably, for example, 3 nm or more and 50 nm or less, more preferably 3 nm or more and 35 nm or less, and still more preferably 3 nm or more and 33 nm or less.

When the adhesion layer also functions as a blackening layer, that is, when the light reflection of the metal layer is suppressed, the thickness of the adhesion layer is preferably set to 3 nm or more as described above.

The upper limit of the thickness of the adhesion layer is not particularly limited, and even if it is thicker than necessary, the time required for film formation or the time required for etching at the time of wiring formation is also prolonged, resulting in an increase in cost. Therefore, the thickness of the adhesion layer is preferably 50 nm or less, more preferably 35 nm or less, and still more preferably 33 nm or less as described above.

Next, a configuration example of the conductive substrate will be described.

As described above, the conductive substrate of the present embodiment may have an insulating base material, a metal layer, an organic material layer, and a blackened layer. Further, a layer such as an adhesion layer may be arbitrarily provided.

Specific examples of the configuration will be described below with reference to FIGS. 1A, 1B, 2A, and 2B. 1A, 1B, 2A, and 2B show the conductive substrate of the embodiment. An example of a cross-sectional view of a surface in the direction in which the insulating substrate, the metal layer, the organic layer, and the blackened layer are stacked.

The conductive substrate of the present embodiment may have a structure in which a metal layer, an organic layer, and a blackened layer are sequentially laminated on at least one surface of an insulating substrate from the side of the insulating substrate.

Specifically, for example, as shown in the conductive substrate 10A shown in FIG. 1A, the metal layer 12, the organic layer 13, and the blackening layer 14 can be laminated in this order on the one surface 11a side of the insulating base material 11. Further, as shown in FIG. 1B, the metal layers 12A and 12B, the organic material layers 13A and 13B, and the blackening layers 14A and 14B may be laminated on the one surface 11a of the insulating base material 11 in order. Side and side of the other side (other side) 11b side.

Further, a configuration may be adopted in which an adhesion layer is further provided as an arbitrary layer. In this case, for example, a structure in which an adhesion layer, a metal layer, an organic layer, and a blackening layer are formed in order from the insulating substrate side on at least one surface of the insulating base material can be formed.

Specifically, for example, as shown in the conductive substrate 20A shown in FIG. 2A, the adhesion layer 15, the metal layer 12, the organic layer 13, and the blackening layer 14 can be sequentially laminated on the surface 11a side of the insulating base material 11.

In this case, a configuration in which an adhesion layer, a metal layer, an organic layer, and a blackening layer are laminated on both surfaces of the insulating base material 11 may be employed. Specifically, as shown in the conductive substrate 20B shown in FIG. 2B, the adhesion layers 15A and 15B, the metal layers 12A and 12B, and the organic layer can be sequentially laminated on the one surface 11a side and the other surface 11b side of the insulating base material 11. 13A, 13B and blackening layers 14A, 14B.

In addition, in FIGS. 1B and 2B, when a metal layer, an organic layer, a blackening layer, or the like is laminated on both surfaces of an insulating base material, the insulating substrate 11 is used as a plane of symmetry. The layer in which the layers stacked on the upper and lower sides of the insulating base material 11 are arranged symmetrically is not limited to this embodiment. For example, in FIG. 2B, the configuration of the one surface 11a side of the insulating base material 11 may be the same as that of the configuration of FIG. 1B, and the metal layer 12A, the organic material layer 13A, and the blackening may be sequentially laminated without providing the adhesion layer 15A. The layer 14A has a configuration in which the layers laminated on the insulating substrate 11 are asymmetric.

Further, in the conductive substrate of the present embodiment, by providing a metal layer, an organic layer, and a blackening layer on the insulating base material, light reflection by the metal layer can be suppressed, and the reflectance of the conductive substrate can be suppressed. .

The degree of reflectance of the conductive substrate of the present embodiment is not particularly limited. For example, when the visibility of the display when used as a conductive substrate for a touch panel is improved, the reflectance is preferably low. For example, the average reflectance of light having a wavelength of 400 nm or more and 700 nm or less is preferably 20% or less, more preferably 17% or less, and still more preferably 15% or less.

The measurement of the reflectance can be performed by irradiating light to the blackened layer of the conductive substrate. Specifically, for example, when the metal layer 12, the organic layer 13 and the blackening layer 14 are sequentially laminated on the one surface 11a side of the insulating base material 11 as shown in FIG. 1A, the blackening layer 14 can be irradiated with light. The surface A of the blackening layer 14 is irradiated with light for measurement. Further, at the time of measurement, light having a wavelength of 400 nm or more and 700 nm or less can be irradiated onto the surface A of the blackening layer 14 of the conductive substrate at intervals of, for example, a wavelength of 1 nm, and the average value of the measured values can be used as the conductivity. The reflectivity of the substrate.

The conductive substrate of the present embodiment can be preferably used as a conductive substrate for a touch panel. In this case, the conductive substrate can be formed to have a mesh-like wiring.

The conductive substrate having the mesh wiring can be obtained by etching the metal layer, the organic layer, and the blackened layer of the conductive substrate of the present embodiment described above.

For example, two layers of wiring can be used to form the mesh wiring. A specific configuration example is shown in Fig. 3 . FIG. 3 is a view showing the conductive substrate 30 including the mesh wiring viewed from the upper surface side in the stacking direction of the metal layer or the like. In order to facilitate understanding of the wiring pattern, the insulating base material 11 and the metal layer are patterned. Description of layers other than the wirings 31A and 32B. Further, the wiring 31B which can be seen through the insulating base material 11 is also disclosed.

The conductive substrate 30 shown in FIG. 3 has an insulating base material 11, a plurality of wires 31A parallel to the Y-axis direction in the drawing, and a wire 31B parallel to the X-axis direction. Further, the wirings 31A and 31B are formed by etching a metal layer, and an organic layer and a blackened layer (not shown) are formed on the upper surface or the lower surface of the wirings 31A and 31B. Further, the organic layer and the blackened layer are etched into the same shape as the wirings 31A and 31B.

The arrangement of the insulating base material 11 and the wirings 31A and 31B is not particularly limited. A configuration example of the arrangement of the insulating base material 11 and the wiring is shown in FIGS. 4A and 4B. 4A and 4B correspond to a cross-sectional view taken along line A-A' of Fig. 3.

First, as shown in FIG. 4A, wirings 31A and 31B may be disposed on the upper and lower surfaces of the insulating base material 11, respectively. In addition, in FIG. 4A, the organic substance layers 32A and 32B and the blackening layers 33A and 33B which are etched in the same shape as the wiring are disposed on the upper surface of the wiring 31A and the lower surface of the 31B.

Further, as shown in FIG. 4B, one set of the insulating base material 11 may be used, and one insulating substrate 11 may be interposed therebetween, and the wirings 31A and 31B may be disposed on the upper and lower surfaces, and one wiring 31B may be disposed on the insulating base material 11. between. In this case, the organic material layers 32A and 32B and the blackening layers 33A and 33B which are etched into the same shape as the wiring are also disposed on the upper surfaces of the wirings 31A and 31B. Further, as described above, an adhesion layer may be provided in addition to the metal layer, the organic layer, and the blackened layer. Therefore, in any of FIGS. 4A and 4B, for example, the wiring 31A and/or the wiring 31B and the insulating substrate 11 may be used. Set the adhesion layer between. When the adhesion layer is provided, it is preferable that the adhesion layer is also etched into the same shape as the wirings 31A, 31B.

The conductive substrate having the mesh wiring shown in FIG. 3 and FIG. 4A can be provided with metal layers 12A and 12B, organic material layers 13A and 13B, and blackening layer 14A on both surfaces of the insulating base material 11 as shown in FIG. 1B. The conductive substrate of 14B is formed.

If the case where the conductive substrate of FIG. 1B is used is described as an example, first, a plurality of linear patterns parallel to the Y-axis direction in FIG. 1B are arranged at a predetermined interval in the X-axis direction to be insulated. The metal layer 12A, the organic layer 13A, and the blackened layer 14A on the one surface 11a side of the substrate 11 are etched. In addition, the X-axis direction in FIG. 1B means a direction parallel to the width direction of each layer. Further, the Y-axis direction in Fig. 1B means a direction perpendicular to the plane of the paper in Fig. 1B.

Then, the metal layer 12B, the organic layer 13B, and the black on the other surface 11b side of the insulating base material 11 are arranged so as to be arranged in the Y-axis direction at a predetermined interval in a plurality of linear patterns parallel to the X-axis direction in FIG. 1B. The layer 14B is etched.

By the above operation, a conductive substrate having mesh wiring as shown in FIGS. 3 and 4A can be formed. Further, etching of both surfaces of the insulating base material 11 can be simultaneously performed. In other words, the etching of the metal layers 12A and 12B, the organic material layers 13A and 13B, and the blackening layers 14A and 14B can be simultaneously performed. Further, in FIG. 4A, a conductive substrate which is patterned into an adhesion layer having the same shape as the wirings 31A and 31B is further provided between the wirings 31A and 31B and the insulating base material 11, and the conductive material shown in FIG. 2B can be used. The substrate is produced by etching in the same manner.

The conductive substrate having the mesh wiring shown in FIG. 3 can also be formed by using two conductive substrates shown in FIG. 1A or FIG. 2A. Formed by using the conductive substrate of FIG. 1A In the case of the conductive substrate shown in FIG. 1A, the metal layer 12 is respectively disposed so as to be arranged in the Y-axis direction at a predetermined interval in a plurality of linear patterns parallel to the X-axis direction. The organic layer 13 and the blackening layer 14 are etched. Then, the conductive substrate having the mesh wiring can be formed by bonding two conductive substrates in the alignment direction so that the linear patterns of the respective conductive substrates cross each other by the above-described etching treatment. The surface to be bonded when the two conductive substrates are bonded together is not particularly limited. For example, the surface A in FIG. 1A in which the metal layer 12 or the like is laminated may be bonded to the other surface 11b in FIG. 1A in which the metal layer 12 or the like is not laminated, thereby forming the structure shown in FIG. 4B.

In addition, for example, the other surface 11b of FIG. 1A in which the metal layer 12 and the like of the insulating base material 11 are not laminated may be bonded to each other to have a structure as shown in FIG. 4A.

In addition, in FIGS. 4A and 4B, a conductive substrate which is patterned into an adhesion layer having the same shape as the wirings 31A and 31B is provided between the wirings 31A and 31B and the insulating base material 11, and can be used by using FIG. 2A. The conductive substrate shown is produced in place of the conductive substrate shown in FIG. 1A.

The wiring width in the conductive substrate having the mesh wiring shown in FIG. 3, FIG. 4A, and FIG. 4B or the distance between the wirings is not particularly limited, and can be selected, for example, according to the amount of current flowing through the wiring.

In addition, in FIG. 3, FIG. 4A, and FIG. 4B, the example which formed the mesh wiring (wiring pattern) by combining the wiring of a linear shape is shown, It is not limited to this. The wiring which comprises a wiring pattern can be arbitrary. shape. For example, the shape of the wiring constituting the mesh wiring pattern can be formed into various shapes such as a zigzag curved line (zigzag straight line) so that no moiré (interference fringe) is generated between the image and the image of the display. .

The conductive substrate having the mesh wiring composed of the two-layer wiring can be preferably used as a conductive substrate for a projection type capacitive touch panel, for example.

According to the conductive substrate of the present embodiment, the organic layer containing the nitrogen-based organic substance is disposed on the metal layer formed on at least one surface of the insulating substrate, and the contact angle of the pure water of the surface of the organic layer facing the blackened layer is Below 60°. Therefore, it is possible to form a conductive substrate having high adhesion of the blackened layer. Further, since the blackening layer is disposed on the organic layer, it is possible to improve the visibility of the display when used for applications such as a touch panel.

(Method of Manufacturing Conductive Substrate)

Next, a configuration example of a method of manufacturing a conductive substrate of the present embodiment will be described.

The method for producing a conductive substrate of the present embodiment may have the following steps.

The metal layer forming step: forming a metal layer on at least one surface of the insulating substrate.

The organic layer formation step: forming an organic layer containing a nitrogen-based organic substance on the metal layer.

The blackening layer forming step: forming a blackening layer on the organic layer.

Further, in the organic layer forming step, the organic layer is preferably formed so that the contact angle of the pure water of the surface of the organic layer facing the blackening layer is 60 or less.

Hereinafter, a method of manufacturing the conductive substrate of the present embodiment will be specifically described.

Further, the above-described conductive substrate can be suitably produced by the method for producing a conductive substrate of the present embodiment. Therefore, the configuration similar to the case of the above-described conductive substrate can be formed except for the points described below, and thus the description thereof will be omitted.

An insulating substrate for the metal layer forming step can be prepared in advance. The type of the insulating substrate to be used is not particularly limited, and as described above, a resin that transmits visible light can be preferably used. A transparent substrate such as a substrate (resin film) or a glass substrate. The insulating substrate may be previously cut into an arbitrary size as needed.

Also, as described above, the metal layer preferably has a metal thin film layer. Further, the metal layer may have a metal thin film layer and a metal plating layer. Therefore, the metal layer forming step may have, for example, a step of forming a metal thin film layer by a dry plating method. Further, the metal layer forming step may have a step of forming a metal thin film layer by a dry plating method, and a step of forming a metal plating layer by a plating method (one of wet plating methods) using the metal thin film layer as a power supply layer.

The dry plating method used in the step of forming the metal thin film layer is not particularly limited, and for example, a vapor deposition method, a sputtering method, an ion plating method, or the like can be used. Further, as the vapor deposition method, a vacuum deposition method can be preferably used. As the dry plating method used in the step of forming the metal thin film layer, since the film thickness is particularly easily controlled, the sputtering method is more preferably used.

Next, the step of forming a metal plating layer will be described. The conditions in the step of forming the metal plating layer by the wet plating method, for example, the conditions of the plating treatment are not particularly limited, and the conditions according to the usual method may be employed. When a metal plating layer is formed by a plating treatment, for example, a substrate on which a metal thin film layer is formed can be supplied to a plating tank in which a metal plating solution is injected, and a current density or a transport speed of the substrate can be controlled.

The suitable thickness or the like of the material or metal layer applicable to the metal layer is as described above, and thus the description thereof is omitted here.

Next, the organic layer formation step will be described.

In the organic layer formation step, an organic layer containing a nitrogen-based organic substance can be formed on the metal layer.

As described above, when an organic layer is provided between the metal layer and the blackening layer, By supplying a nitrogen-based organic substance solution so as to form a uniform film in which the metal layer and the organic layer are combined, the adhesion of the blackened layer can be improved.

The method for forming the organic layer is not particularly limited, and it can be formed by supplying and drying a nitrogen-based organic solution on the metal layer.

The method of supplying the nitrogen-based organic substance solution is not particularly limited, and the supply can be carried out by any method. For example, a solution containing a material constituting the organic layer may be applied to the metal layer by applying a nitrogen-based organic solution by a spray or the like, or by immersing the insulating substrate on which the metal layer is formed in the nitrogen-based organic solution.

However, when a nitrogen-based organic substance solution is supplied, it is preferred to uniformly supply a nitrogen-based organic substance solution to the surface of the metal layer so as to form a uniform film in which the metal layer and the organic layer are combined. Therefore, for example, it is preferable to supply the nitrogen-based organic substance solution to the surface on the side where the blackening layer is formed by the metal layer, or to form the surface of the side of the blackening layer on the metal layer, and repeat it in plural times. A nitrogen-based organic solution is supplied.

The nitrogen-based organic substance used for the organic layer is not particularly limited, and for example, it is preferable to contain 1,2,3-benzotriazole or a derivative thereof. Specific examples of the nitrogen-based organic substance used for the organic layer include 1,2,3-benzotriazole and 5-methyl-1H benzotriazole.

Further, in the organic layer forming step, for example, a nitrogen-based organic substance solution (which is a chemical containing the nitrogen-based organic substance) can be used to form an organic layer.

As a chemical agent containing a nitrogen-based organic substance for the organic layer, for example, a rust-preventing agent for copper can be preferably used. As a commercially available drug, for example, OPC-DEFENSER (trade name, Okuno Pharmaceutical Co., Ltd.) can be preferably used. )Wait.

The preferred conditions for supplying the nitrogen-based organic solution to the metal layer are As described above, the description is omitted here.

Further, after the nitrogen-based organic substance solution is applied, in order to remove the remaining nitrogen-based organic substance solution, a water washing step of washing the substrate coated with the nitrogen-based organic substance solution with water may be performed.

Next, the blackening layer forming step will be described.

In the blackening layer forming step, the method of forming the blackening layer is not particularly limited, and it can be formed by any method. For example, the film formation can be carried out by a dry method or a wet method.

When the blackening layer is formed into a film by a dry method, the specific method is not particularly limited. For example, a dry plating method such as a sputtering method, an ion plating method, or a vapor deposition method can be preferably used. In particular, since the film thickness is easily controlled, the sputtering method is more preferably used. Further, one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen may be added to the blackening layer as described above. In this case, the reactive sputtering method can be further preferably used.

Further, as described above, the blackening layer may be formed by a wet method such as electroplating.

However, when the blackening layer is formed, since the nitrogen-based organic substance contained in the organic layer is dissolved in the plating solution and enters the blackening layer, the color tone or other characteristics of the blackening layer are affected, so that it is preferably utilized. Dry method to form a film.

Since the suitable thickness and the like of the material applicable to the blackening layer or the blackened layer have been described, the description is omitted here.

In the method for producing a conductive substrate of the present embodiment, in addition to the above steps, any step may be further carried out.

For example, when an adhesion layer is formed between the insulating base material and the metal layer, an adhesion layer forming step of forming an adhesion layer on the surface on which the metal substrate is formed on the insulating base material can be performed. When implementing close connection In the case of the layer forming step, the metal layer forming step may be performed after the adhesion layer forming step, and in the metal layer forming step, the metal thin film layer may be formed on the insulating substrate to form the substrate having the adhesion layer.

In the adhesion layer forming step, the film formation method of the adhesion layer is not particularly limited, and the film formation is preferably carried out by a dry plating method. As the dry plating method, for example, a sputtering method, an ion plating method, a vapor deposition method, or the like can be preferably used. When the adhesion layer is formed by a dry method, since the film thickness is easily controlled, the sputtering method is more preferably used. Further, one or more elements selected from the group consisting of carbon, oxygen, hydrogen, and nitrogen may be added to the adhesion layer as described above. In this case, a reactive sputtering method can be further preferably used.

The preferred thickness and the like of the material or the adhesion layer which can be applied to the adhesion layer have been described, and thus the description thereof will be omitted.

The conductive substrate obtained by the method for producing a conductive substrate of the present embodiment can be used for various applications such as a touch panel. Further, in the case of use in various applications, it is preferable that the metal layer, the organic layer, and the blackened layer contained in the conductive substrate of the present embodiment have been patterned. In addition, when the adhesion layer is provided, it is preferable to pattern the adhesion layer. The metal layer, the organic layer, the blackened layer, and optionally the adhesion layer can be patterned, for example, in accordance with a desired wiring pattern. Preferably, the metal layer, the organic layer, the blackened layer, and optionally the dense layer are patterned. Turn into the same shape.

Therefore, the method for producing a conductive substrate of the present embodiment may have a patterning step of patterning the metal layer, the organic layer, and the blackened layer. In addition, when the adhesion layer is formed, the patterning step may be a step of patterning the adhesion layer, the metal layer, the organic layer, and the blackening layer.

The specific procedure of the patterning step is not particularly limited and can be carried out using any program. For example, as shown in FIG. 1A, when the conductive substrate 10A having the metal layer 12, the organic layer 13 and the blackening layer 14 laminated on the insulating substrate 11, the surface A on the blackening layer 14 can be first applied. A mask configuration step of configuring a mask having a desired pattern. Next, an etching step of supplying an etching liquid to the upper surface of the blackening layer 14, that is, the surface side on which the mask is disposed, may be performed.

The etching liquid used in the etching step is not particularly limited, and may be arbitrarily selected depending on the material constituting the layer to be etched. For example, the etching liquid may be changed for each layer, or the metal layer, the organic layer, the blackening layer, and optionally the adhesion layer may be etched using the same etching solution.

Further, as shown in FIG. 1B, the conductive substrate 10B in which the metal layers 12A and 12B, the organic material layers 13A and 13B, and the blackening layers 14A and 14B are laminated on the one surface 11a and the other surface 11b of the insulating base material 11 may be applied. A patterned patterning step is performed. In this case, for example, a mask arranging step of arranging a mask having a predetermined pattern on the surface A and the surface B on the blackening layers 14A, 14B can be performed. Next, an etching step of supplying the etching liquid to the surface A and the surface B on the blackening layers 14A and 14B, that is, the surface side on which the mask is disposed, may be performed.

The pattern formed in the etching step is not particularly limited and may be any shape. For example, in the case of the conductive substrate 10A shown in FIG. 1A, the metal layer 12, the organic layer 13 and the blackening layer can be applied in such a manner as to include a plurality of straight lines or zigzag curved lines (zine-shaped straight lines) as described above. 14 forms a pattern.

Moreover, in the case of the conductive substrate 10B shown in FIG. 1B, the metal layer 12A and the metal layer 12B may be patterned in such a manner as to be a mesh wiring. In this case, it is preferable that the organic layer 13A and the blackening layer 14A have the same shape as the metal layer 12A, and the organic layer 13B and the blackening layer 14B are patterned in the same shape as the metal layer 12B.

Further, for example, the metal layer 12 or the like may be patterned on the conductive substrate 10A in a patterning process, and then a lamination step of laminating two or more patterned conductive substrates may be performed. When laminating, for example, a laminated conductive substrate including mesh wiring may be obtained by laminating the patterns of the metal layers of the respective conductive substrates.

The method of fixing the two or more laminated conductive substrates is not particularly limited, and for example, it can be fixed by an adhesive or the like.

According to the conductive substrate obtained by the method for producing a conductive substrate of the present embodiment, an organic layer is disposed on a metal layer formed on at least one surface of the insulating substrate, and the organic layer faces the surface of the blackened layer. Pure water has a contact angle of 60 or less and contains a nitrogen-based organic substance. Therefore, it is possible to form a conductive substrate having high adhesion of the blackened layer. Further, since the blackening layer is disposed on the organic layer, it is possible to improve the visibility of the display when used for applications such as a touch panel.

<Example>

Hereinafter, specific examples and comparative examples will be described, but the present invention is not limited to these examples.

(evaluation method)

First, a method of evaluating the obtained conductive substrate will be described.

(1) Contact angle

When the produced conductive substrate was produced in each of the following examples and comparative examples, the contact angle of the surface of the organic layer with respect to pure water was measured before the formation of the blackened layer after the formation of the organic layer.

Measurement using automatic contact angle meter (Xiehe Interface Science Co., Ltd., type No.: DM-301).

After the formation of the organic layer, 1.0 μL of pure water was supplied to the surface of the organic layer on which the blackened layer was formed, and the contact angle was measured.

(adhesion test)

As shown in Fig. 5, a blackening layer of a conductive substrate formed on the blackened layer was formed into a stripe at a distance of 1.0 mm using a cutting tool (Cross Cut Kit 1.0MM, manufactured by Precision Gate & Tool Company). A longitudinal cutting line 51a having a length of 20 mm.

Next, using the same cutting tool, 11 transverse cutting lines 51b having a length of 20 mm were formed so as to be parallel to each other at intervals of 1.0 mm so as to be orthogonal to the previously formed longitudinal cutting line 51a.

By the above steps, as shown in FIG. 5, 11 cut lines in the longitudinal direction and the lateral direction are used to form a lattice-like cut in the blackened layer.

Then, the tape for adhesion evaluation (Elcometer 99 tape manufactured by Elcometer Co., Ltd.) was adhered to cover the lattice-like cuts, and then sufficiently rubbed.

After 30 seconds from the evaluation of the adhesive adhesion degree, the adhesion evaluation tape was quickly torn off in a direction as long as 180° with respect to the measurement surface.

After the tape for evaluation of adhesion is torn off, a metal layer (organic layer) is formed under the blackening layer in the evaluation region 52 in FIG. 5 surrounded by the lattice-shaped longitudinal cutting line 51a and the transverse cutting line 51b. The area is to evaluate the adhesion.

When the exposed area of the metal layer in the evaluation area is 0%, it is evaluated as 5B, when more than 0% is less than 5%, it is evaluated as 4B, when it is greater than or equal to 5% and less than 15%, it is evaluated as 3B, and when it is greater than or equal to 5% and less than 15%, it is evaluated as 3B. When the % is evaluated as 2B, when it is greater than or equal to 35% and less than 65%, it is evaluated as 1B, when large When it is equal to 65%, it is evaluated as 0B. Regarding this evaluation, 0B is the lowest adhesion of the blackened layer, and 5B is the highest adhesion of the blackened layer.

As a result of the adhesion test, when it is 5B, it can be evaluated that the adhesion of the blackened layer is sufficient.

(production conditions of the sample)

As an example and a comparative example, a conductive substrate was produced under the conditions described below, and the evaluation was performed by the above-described evaluation method.

[Example 1]

(adhesion layer forming step)

The adhesion layer was formed on one surface of an insulating base material made of polyethylene terephthalate resin (PET) having a length of 500 mm, a width of 500 mm, and a thickness of 50 μm. In addition, the insulating base material made of the polyethylene terephthalate resin used as the insulating base material was 97% after the total light transmittance was evaluated by the method defined in JIS K 7361-1.

In the adhesion layer forming step, a Ni-Cu alloy layer containing oxygen was formed as an adhesion layer by a sputtering apparatus to which a target of Ni-17 wt% Cu alloy was attached. The film formation step of the adhesion layer will be described below.

The above-mentioned insulating base material which was previously heated to 60 ° C to remove moisture was placed in the chamber of the sputtering apparatus.

Next, after evacuating the chamber to 1 × 10 ^-3 Pa, argon gas and oxygen gas were introduced to bring the pressure in the chamber to 1.3 Pa. In addition, at this time, the environment in the chamber is 30% oxygen in terms of volume ratio, and the rest is argon.

Next, power is supplied to the target in this environment, and on one side of the insulating substrate The adhesion layer was formed into a film in such a manner that the thickness became 20 nm.

(metal layer forming step)

In the metal layer forming step, a metal thin film layer forming step and a metal plating layer forming step are performed.

First, the metal thin film layer forming step will be described.

In the step of forming the metal thin film layer, a copper thin film layer as a metal thin film layer is formed on the adhesive layer by using an adhesive layer formed on the insulating base material in the adhesion layer forming step.

The metal thin film layer was formed by a sputtering apparatus in the same manner as in the case of the adhesion layer, except that a copper target was used and an argon atmosphere was supplied to the inside of the chamber in which the substrate was provided.

Film formation was performed so that the thickness of the copper thin film layer which is a metal thin film layer was 150 nm.

Next, in the metal plating layer forming step, a copper plating layer is formed as a metal plating layer. For the copper plating layer, film formation was performed by a plating method so that the thickness of the copper plating layer was 0.5 μm.

(organic layer formation step)

In the organic layer formation step, an organic layer is formed on the metal layer on which the laminate of the adhesion layer and the metal layer is formed on the insulating base material.

In the organic layer formation step, the laminate was first immersed in a solution containing OPC-DEFENSER (manufactured by Okuno Pharmaceutical Co., Ltd.) containing 1,2,3-benzotriazole as a nitrogen-based organic substance for 7 seconds. Further, the OPC-DEFENSER solution to be used was adjusted in advance so that the concentration of 1,2,3-benzotriazole was 3 mL/L, and the bath temperature was 30 ° C and pH 3.

Next, the solution adhering to the upper surface of the metal layer, that is, the surface of the metal layer facing the side opposite to the surface of the adhesion layer, is removed by water washing, and then dried to form an organic layer on the metal layer.

Further, after the organic layer formation step, a part of the substrate was cut out for evaluation of the above contact angle.

(blackening layer forming step)

In the blackening layer forming step, a Ni-Cu layer is formed as a blackening layer by a sputtering method on the organic layer formed in the organic layer forming step.

In the blackening layer forming step, a Ni-Cu alloy layer was formed as a blackening layer by a sputtering apparatus equipped with a target of Ni-35 wt% Cu alloy. The film formation step of the blackening layer will be described below.

First, a laminate in which an adhesion layer, a metal layer, and an organic layer are laminated on an insulating substrate is placed in a chamber of a sputtering apparatus.

Next, after evacuating the chamber to 1 × 10 ^-3 Pa, argon gas was introduced to bring the pressure in the chamber to 1.3 Pa.

Next, electric power was supplied to the target in this environment, and a blackened layer having a thickness of 30 nm was formed on the organic layer.

By the above steps, a blackening layer is formed on the upper surface of the metal layer, that is, the surface opposite to the surface of the metal layer facing the adhesion layer, and the adhesion layer and the metal layer are sequentially laminated on the insulating substrate. A conductive substrate of an organic layer or a blackened layer.

The adhesion test was performed about the obtained electroconductive substrate.

The results are shown in Table 1.

[Example 2, Example 3]

A conductive substrate was produced in the same manner as in Example 1 except that the contact angle of the surface of the organic layer was changed by changing the concentration of the OPC-DEFENSER solution, the bath temperature or the pH value at the time of forming the organic layer.

The adhesion test was performed on the obtained conductive substrate.

The results are shown in Table 1.

[Comparative Example 1]

A conductive substrate was produced in the same manner as in Example 1 except that the contact angle of the surface of the organic layer was changed by changing the concentration of the OPC-DEFENSER solution, the bath temperature or the pH value at the time of forming the organic layer.

The adhesion test was performed on the obtained conductive substrate.

The results are shown in Table 1.

The relationship between the contact angle of the organic layer shown in Table 1 and the evaluation result of the adhesion of the blackened layer is shown in Fig. 6 .

From the results of Tables 1 and 6, it was confirmed that the results of the adhesion test were 5B for Examples 1 to 3 in which the contact angle of the surface of the organic layer was 60 or less. On the other hand, in Comparative Example 1 to Comparative Example 3 in which the contact angle of the surface of the organic layer exceeded 60°, the result of the adhesion test was 3B or 4B, and peeling of the blackened layer was confirmed.

According to the above results, it was confirmed that the conductive substrate having the organic layer formed between the metal layer and the blackened layer can be made into a blackened layer by setting the contact angle of the surface of the organic layer to 60° or less. Highly conductive substrate.

Although the conductive substrate and the method for producing the conductive substrate have been described above by way of the embodiments and the examples, the present invention is not limited to the above-described embodiments and examples. Various modifications and changes can be made without departing from the spirit and scope of the invention.

The present application claims the priority of the application No. 2015-152896, filed on Jan. 31, 2015, to the Japan Patent Office.

Claims (4)

A conductive substrate comprising: an insulating substrate; a metal layer formed on at least one surface of the insulating substrate; an organic layer containing the nitrogen-based organic material formed on the metal layer; and formed on the organic layer The blackening layer has a contact angle of pure water of the organic layer facing the surface of the blackening layer of 60 or less. The conductive substrate according to claim 1, wherein the nitrogen-based organic substance contains 1,2,3-benzotriazole or a derivative thereof. A method for producing a conductive substrate, comprising the steps of: forming a metal layer on at least one surface of the insulating substrate; and forming an organic layer on the metal layer to form an organic substance containing a nitrogen-based organic substance And a blackening layer forming step of forming a blackening layer on the organic layer, wherein in the organic layer forming step, a contact angle of pure water of the organic layer facing the blackening layer is 60° or less The organic layer is formed. The method for producing a conductive substrate according to the third aspect of the invention, wherein the nitrogen-based organic substance contains 1,2,3-benzotriazole or a derivative thereof.