TWI700120B - Multi-tray ballast vapor draw systems - Google Patents
Multi-tray ballast vapor draw systems Download PDFInfo
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- TWI700120B TWI700120B TW107145291A TW107145291A TWI700120B TW I700120 B TWI700120 B TW I700120B TW 107145291 A TW107145291 A TW 107145291A TW 107145291 A TW107145291 A TW 107145291A TW I700120 B TWI700120 B TW I700120B
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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Abstract
Description
本揭露內容係關於用以將氣化前驅物供應至基板處理工具的系統與方法。The present disclosure relates to systems and methods for supplying vaporized precursors to substrate processing tools.
在此所提供之先前技術說明內容係為了概括描述本揭露內容的背景之目的。在此先前技術段落中所述的發明人之工作以及在申請時於其他方面不具先前技術資格的說明內容之觀點,皆不明示或暗示地被承認為本揭露內容之先前技術。The previous technical description provided here is for the purpose of describing the background of the disclosure in general. The work of the inventor described in this paragraph of the prior art and the viewpoints of the explanations that do not have prior technical qualifications in other aspects at the time of application are not explicitly or implicitly recognized as the prior art of the disclosure.
基板處理工具係用以處理例如半導體晶圓的基板。此處理通常包含將處理腔室中的基板曝露至氣化前驅物。僅作為範例,在基板上沉積層時,例如化學氣相沉積(CVD,chemical vapor deposition)、電漿增強CVD(PECVD,plasma-enhanced CVD)、原子層沉積(ALD,atomic layer deposition)、電漿增強ALD(PEALD,plasma-enhanced ALD)以及無氟鎢(FFW,fluorine free tungsten)的程序係將基板曝露至一或多種氣化前驅物。Substrate processing tools are used to process substrates such as semiconductor wafers. This processing usually involves exposing the substrate in the processing chamber to a vaporized precursor. Just as an example, when depositing layers on a substrate, such as chemical vapor deposition (CVD, plasma-enhanced CVD), plasma-enhanced CVD (PECVD), atomic layer deposition (ALD), plasma Enhanced ALD (PEALD, plasma-enhanced ALD) and fluorine free tungsten (FFW) procedures involve exposing the substrate to one or more vaporized precursors.
一種用以產生氣化前驅物的方式係包含將液體前驅物氣化。要將具有低蒸氣壓(在室溫下一般小於1 Torr)以及高黏度(> 5 cP)的液體前驅物氣化係困難的。具有低蒸氣壓以及高黏度的液體前驅物容易發生再凝結現象,並且無法使用直接液體注入方式進行氣化(因為高黏度液體不易霧化)。又,在遠低於沸點之溫度下分解的液體前驅物不適合在霧化後被氣化。用以氣化具有低到中蒸氣壓之前驅物的系統與方法一般包含蒸氣吸引、起泡器或安瓿內部之液體單一表面上方的流動。其他選項係使用霧化器以及氣化器。然而,對於低到中流率的前驅物而言,氣化器並非理想。One way to generate vaporized precursors involves vaporizing liquid precursors. It is difficult to vaporize liquid precursors with low vapor pressure (generally less than 1 Torr at room temperature) and high viscosity (> 5 cP). Liquid precursors with low vapor pressure and high viscosity are prone to recondensation and cannot be vaporized by direct liquid injection (because high-viscosity liquids are not easy to atomize). In addition, liquid precursors that decompose at temperatures far below the boiling point are not suitable for vaporization after atomization. Systems and methods for vaporizing precursors with low to medium vapor pressure generally include vapor suction, bubbler, or flow over a single surface of liquid inside an ampoule. Other options are the use of atomizers and vaporizers. However, for precursors with low to medium flow rates, gasifiers are not ideal.
標準起泡器能夠使載氣飽含前驅物。然而,載氣流率通常會因為顧慮到飛濺(splashing)而被限制。單一表面上方流動(flow-over)系統(於此處載氣係流進安瓿內而不流進液體內)能夠增加安瓿內的總壓力,以使氣化前驅物可從安瓿流至處理腔室。然而,載氣並未飽含蒸氣,且可被運送到處理腔室之氣化前驅物的量相當地少。The standard bubbler can make the carrier gas saturated with precursors. However, the carrier gas flow rate is usually limited due to concerns about splashing. A single surface flow-over system (where the carrier gas flows into the ampoule instead of the liquid) can increase the total pressure in the ampoule so that the vaporized precursor can flow from the ampoule to the processing chamber . However, the carrier gas is not saturated with vapor, and the amount of vaporized precursor that can be transported to the processing chamber is relatively small.
一種供應氣化前驅物的系統包含一殼體,該殼體包含一輸出端。複數托盤在該殼體內部配置成堆疊、隔開的構造。該複數托盤用以容納液體前驅物。一第一導管使一載氣供應部與該殼體流體連接,並且包含複數開口。一第一閥沿著該第一導管配置,並且用以選擇性地控制從該載氣供應部通過該第一導管到該第一導管中之該複數開口的載氣輸送。該複數開口用以引導該載氣分別橫越該複數托盤內的該液體前驅物。該殼體的該輸出端提供該載氣與該氣化前驅物的一混合物。A system for supplying gasification precursors includes a housing, and the housing includes an output end. Plural trays are arranged in a stacked and spaced structure inside the casing. The plurality of trays are used to hold liquid precursors. A first conduit fluidly connects a carrier gas supply part with the housing, and includes a plurality of openings. A first valve is arranged along the first duct and used to selectively control the delivery of carrier gas from the carrier gas supply part through the first duct to the plurality of openings in the first duct. The plurality of openings are used for guiding the carrier gas to cross the liquid precursors in the plurality of trays respectively. The output end of the shell provides a mixture of the carrier gas and the gasification precursor.
一種供應氣化前驅物的方法,包含在一殼體內部將複數托盤配置成堆疊、隔開的構造;以液體前驅物至少部分地填充該複數托盤;使用一第一導管將一載氣供應部與該殼體流體連接;控制從該載氣供應部通過該第一導管到該第一導管中之複數開口的載氣輸送;配置該第一導管中的該複數開口,以引導該載氣分別橫越該複數托盤內的該液體前驅物;以及在該殼體的一輸出端提供該載氣與該氣化前驅物的一混合物。A method of supplying vaporized precursors includes arranging a plurality of trays into a stacked and spaced structure inside a housing; filling the plurality of trays at least partially with a liquid precursor; and using a first conduit to supply a carrier gas Fluidly connected with the housing; controlling the carrier gas delivery from the carrier gas supply part through the first conduit to the plurality of openings in the first conduit; configuring the plurality of openings in the first conduit to guide the carrier gas respectively Crossing the liquid precursor in the plurality of trays; and providing a mixture of the carrier gas and the vaporized precursor at an output end of the shell.
吾人可從詳細說明內容、請求項以及圖式明白本揭露內容的適用性範圍。此詳細說明內容與具體範例僅係為了例示之目的而準備,且不意指限制本揭露內容的範圍。We can understand the scope of applicability of this disclosure from the detailed description, request items and drawings. The detailed description and specific examples are prepared for illustrative purposes only, and are not intended to limit the scope of the disclosure.
本揭露內容係關於用以在上方流動、壓載或載氣型系統中藉由使用載氣與液體前驅物之間的增加表面界面面積來增加前驅物氣化的系統與方法。在一範例中,增加的表面面積係由容納液體前驅物的多托盤所提供。多氣體流出口增加載氣/前驅物交互作用。這些系統與方法亦提供從加熱器到液體/蒸氣界面的改良熱傳遞。例如,此加熱器可配置在腔室中的中央支撐構件內。The present disclosure relates to a system and method for increasing the vaporization of the precursor by using the increased surface interface area between the carrier gas and the liquid precursor in an upward flow, ballast or carrier gas type system. In one example, the increased surface area is provided by multiple trays containing liquid precursors. Multiple gas outlets increase the interaction of carrier gas/precursor. These systems and methods also provide improved heat transfer from the heater to the liquid/vapor interface. For example, this heater may be arranged in the central support member in the chamber.
這些系統與方法包含用以再填充多托盤的系統。僅作為範例,吾人可藉由使用一或多個液位感測器來使多托盤之每一者中的液體填充速率均等,以控制液體前驅物在多托盤中的液位。例如,在使用或不使用載氣的情況下,這些系統與方法可被用來作為針對中蒸氣壓前驅物提高蒸氣流率的高表面面積蒸氣吸引系統。These systems and methods include systems for refilling multiple trays. Merely as an example, we can use one or more liquid level sensors to equalize the liquid filling rate in each of the multi-trays to control the liquid level of the liquid precursor in the multi-trays. For example, with or without the use of carrier gas, these systems and methods can be used as high surface area vapor suction systems to increase vapor flow rate for intermediate vapor pressure precursors.
現在參考圖1A與1B,氣化前驅物輸送系統100將氣化前驅物供應到用以處理基板104(例如半導體晶圓)的處理腔室102。在若干範例中,例如閥、限制孔口或質量流量控制器的流量控制裝置106可用以控制對於處理腔室104之氣化前驅物的供應。Referring now to FIGS. 1A and 1B, the vaporized
氣化前驅物輸送系統100包含殼體108以及配置在殼體108內的托盤組件110。托盤組件110包含多托盤112-1、112-2…以及112-N(共同稱為托盤112)。每一個托盤112可包含開口114-1、114-2…以及114-N(共同稱為開口114),以提供與支撐構件120連接的安裝位置。或者,可省略此支撐構件並且使用替代的支撐機構。舉例來說,這些托盤可被此殼體的側邊所支撐(例如使用槽孔或凸部)或者可在托盤的邊緣之間使用間隔件。托盤112的側邊為開放以允許載氣在其間自由地流動。例如,托盤112可具有圓形、正方形、矩形、均勻、非均勻或其他形狀的橫剖面。托盤112可配置成堆疊、均勻隔開的配置方式,以允許載氣自由地流動橫越液體前驅物。每一個托盤112界定了用以容納與儲存液體前驅物的容積。在若干範例中,支撐構件120與托盤112可由導熱性材料所製成,例如不銹鋼、鋁、或允許熱傳遞的其他材料。The vaporized
液體前驅物儲槽130經由閥134以及一或多個導管140而將液體前驅物供應至托盤112。重力、幫浦、或例如氦的惰性推動氣體可用以增加管線壓力。導管140可穿過每一個托盤112中的開口。配置導管140中的開口142-1、142-2…以及142-N,以將液體前驅物供應到每一個托盤112-1、112-2…以及112-N。The liquid
在其他範例中,如圖1B所示,導管140係沿著托盤112的一側配置,並且包含從導管140橫向延伸的伸出部分250-1、250-2…以及250-N(共同稱為伸出部分250)。圖1B中的伸出部分250向內(或向內且向下)延伸,以將液體前驅物輸送至托盤112。In other examples, as shown in FIG. 1B, the
吾人可使用閥152與導管154而藉由散裝(bulk)儲槽150來定期填充液體前驅物儲槽130。載氣162可藉由以164所標示的一或多個閥及/或質量流量控制器(MFC,mass flow controller)以及導管166加以供應。導管166包含配置來引導載氣橫越每一個托盤112的一或多個限制開口或限制開口組。每一個開口組可包含提供多方向之載氣流的多開口。導管166中的開口170-1、170-2…以及170-N在托盤112上方輸送載氣流。We can use the
在若干範例中,加熱器180可用來間接加熱支撐構件120,此支撐構件將熱傳遞至托盤112以及托盤112內的液體前驅物。或者,加熱器可配置在此支撐構件的內部。在若干範例中,一或多個振動裝置184可用以對支撐構件120(如圖所示)施予振動或者單獨對托盤112施予振動。In some examples, the
控制器200可用以控制在氣化前驅物輸送系統100中的一或多個閥。例如,控制器200可控制流量控制裝置106,以調整輸送到處理腔室104之氣化前驅物的量。控制器200可與一或多個液位感測器204連接,以感測在其中一或多個托盤112內之液體前驅物的液位。基於在其中一或多個托盤112內之液體前驅物的感測液位,控制器200可用來控制閥134,以供應額外的液體前驅物。控制器200可用來控制閥164,以調整橫越托盤112的載氣流。控制器200可與一或多個液位感測器208連接,以感測在液體前驅物儲槽130中之液體前驅物的液位。基於液體前驅物儲槽130的感測液位,控制器200可用來控制閥134而供應額外的液體前驅物,以再填充液體前驅物儲槽130。The
現在參考圖1B與1C,顯示各種控制方法的範例。在圖1B中,用251所標示的以壓力為基礎的質量流量控制器(MFC)或可變孔口可被設定到固定值並且用來提供浮動(floating)壓力。壓力感測器252提供回饋給控制器200,此控制器控制MFC 254。在圖1C中,顯示固定壓力方法,其包含以壓力為基礎的MFC 260以及可變限制孔口264。壓力感測器266提供壓力回饋給控制器200,此控制器控制可變限制孔口264以及MFC 254。或者,此壓力感測器可提供回饋給放置在此壓力感測器位置之下游的回壓(back pressure)控制器。此回壓控制器在本質上乃為一孔口,其被控制在某個開度直到達到其上游所需的壓力為止。此種控制方式係當希望安瓿內具有固定總壓力時而使用。Referring now to Figures 1B and 1C, examples of various control methods are shown. In FIG. 1B, a pressure-based mass flow controller (MFC) or variable orifice designated by 251 can be set to a fixed value and used to provide a floating pressure. The
現在參考圖2A,多托盤壓載系統300包含殼體108以及配置在殼體108內的多托盤組件310。多托盤組件310包含多托盤312-1、312-2…以及312-N(共同稱為托盤312)。托盤312-1、312-2…以及312-N包含配置在其一端或兩端的液體開口320-1、320-2…以及320-N。液體開口320-1、320-2…以及320-N-1(或N,如果最底的托盤312包含液體開口的話)(共同稱為液體開口320)係配置在托盤312的部分,這些部分係位在托盤312之面朝上表面324的上方,以允許預定體積或預定表面面積的液體前驅物在流過液體開口320之前聚集在對應的托盤312內。Referring now to FIG. 2A, the
現在參考圖2B與2C,吾人可以數種其他方式來輸送液體前驅物。例如,在圖2B中,係從側邊來輸送液體前驅物。當存在足夠體積的液體前驅物時,液體前驅物會流過托盤312-1中的一或多個液體開口320。其中某些液體前驅物將直接排出到緊鄰的較下方托盤(例如托盤312-2),以及某些液體前驅物將因為液體表面張力與吸引力而沿著托盤312-1的底表面流動。吾人可明白,液體前驅物的額外曝露表面面積係由沿著托盤312之底表面流動的液體前驅物所提供(相較於圖1B與1C中的系統)。在圖2C中,將液體前驅物輸送到頂托盤312-1,並且使用開口320將液體前驅物供給到較下方托盤312。以下參考圖3,顯示方法400。於404,將多托盤配置在該腔室內。於408,將液體前驅物輸送至該等托盤。於412,該方法判定在托盤中的液體前驅物之液位是否足夠。若為否,則該方法回到408。若412為正確,則於416可選地加熱或振動該等托盤。於420,可選地將載氣流供應橫越該等托盤並且供應於該等托盤之間。於424,將氣化前驅物輸送至該處理腔室。於430,該方法判定處理是否完成。若為否,則該方法回到412。不然,該方法則於440繼續,並停止將氣化前驅物輸送至該處理腔室。Now referring to Figures 2B and 2C, we can deliver liquid precursors in several other ways. For example, in Figure 2B, the liquid precursor is transported from the side. When there is a sufficient volume of liquid precursor, the liquid precursor will flow through one or more liquid openings 320 in the tray 312-1. Some of the liquid precursors will be directly discharged to the immediately lower tray (such as tray 312-2), and some of the liquid precursors will flow along the bottom surface of the tray 312-1 due to the liquid surface tension and attractive force. As we can understand, the additional exposed surface area of the liquid precursor is provided by the liquid precursor flowing along the bottom surface of the tray 312 (compared to the system in Figures 1B and 1C). In FIG. 2C, the liquid precursor is delivered to the top tray 312-1, and the opening 320 is used to supply the liquid precursor to the
現在參考圖4,環500可配置在每一個托盤上方。環500包含凸部502-1、502-2…以及502-Z(共同稱為凸部502),其中Z為大於1的整數。凸部502被顯示大致在徑向上朝內突出。凸部502的端部包含開口或噴嘴504-1、504-2…以及504-Z(共同稱為開口或噴嘴504),以將載氣引導於托盤的表面上。噴嘴504可為了在出口的扼流(choked flow)與高速度而設計。凸部502可具有任何合適的構造。凸部502可為直線、曲線、彎曲(如圖4所示)或任何其他合適構造。凸部502可具有彎曲的構造,以增加紊流(turbulence)。凸部502可在圓周方向上彎曲以產生所顯示的螺旋流動圖案及/或向下朝托盤的表面彎曲。Referring now to FIG. 4, the
現在參考圖5A與5B,顯示另一環530。在圖5A中,環530包含橫桿534-1、534-2…以及534-F(共同稱為橫桿534),其中F為整數,這些橫桿相互隔開並且從環530的一側延伸至環530的相對側。橫桿534可如同顯示以平行方式加以配置或者以其他圖案加以配置。在圖5B中,開口540-1、540-2…以及540-A(共同稱為開口540),其中A為整數,這些開口被顯示配置在其中一橫桿534的一側上,以將流動導向托盤的表面。噴嘴可配置在開口540內。這些噴嘴可為了在出口的扼流與高速度而設計。Referring now to Figures 5A and 5B, another
吾人可明白,在若干範例中,開口540可配置在橫桿534的相反表面上,以在相反方向上引導載氣。此種配置方式可有助於增加紊流。當液體前驅物沿著托盤的底表面流動時,此種配置方式亦特別有幫助。As we can understand, in some examples, the
現在參考圖6,具有開口550-1、550-2…以及550-N的導管550可用以將氣化前驅物與載氣引導至處理腔室。Referring now to FIG. 6, a
現在參考圖7A與7B,可使用分離環600。分離環600可包含第一環部分608以及第二環部分620。第一環部分608係與載氣源連接,並且包含凸部612-1、612-2…以及612-S(共同稱為凸部612),這些凸部具有開口或噴嘴616-1、616-2…以及616-S(共同稱為開口或噴嘴616),以將載氣引導於托盤內所容納的液體上。在其他範例中,噴嘴616可直接配置在第一環部分608上而不使用凸部612。Referring now to Figures 7A and 7B, a
在圖7A中,第二環部分620包含開口622-1、622-2…以及622-T(其中T為大於1的整數)(共同稱為開口622),這些開口係位於第二環部分620的徑向內表面上,以回收氣化前驅物與載氣。開口622可被均勻地隔開,並且可與一歧管連接。選擇第二環部分620上之開口622的尺寸與數量以提供高傳導路徑,俾能使此蒸氣在不具有壓力降的情況下流動。In FIG. 7A, the
在圖7B中,第二環部分620包含凸部634-1、634-2…以及634-R(共同稱為凸部634)(其中R為大於1的整數),這些凸部係從該環延伸,以回收氣化前驅物與載氣。在第二環部分620上之位於凸部634之端部的開口636可為高傳導開口,俾能使此蒸氣在不具有壓力降的情況下流動。In FIG. 7B, the
用以將氣流導向液體表面的導管可包含管或凸部中的開口,其係在托盤內之液體的表面增加紊流。紊流會增加熱與質量傳遞係數並且增加自每一個托盤的氣化速率。若再填充托盤的能力使托盤內的液位保持固定的話,此類型的引導凸部會變為可行(否則液體液位降低將會對表面動態造成改變的凸出情況)。同樣地,振動裝置可用以增加紊流。The ducts used to direct the airflow to the surface of the liquid may include openings in tubes or protrusions that are attached to the surface of the liquid in the tray to increase turbulence. Turbulence increases the heat and mass transfer coefficient and increases the rate of vaporization from each tray. If the ability to refill the tray keeps the liquid level in the tray fixed, this type of guide protrusion will become feasible (otherwise the drop in the liquid level will cause a change in the surface dynamics). Likewise, vibration devices can be used to increase turbulence.
以上說明在本質上僅為例示性,並且決非意指限制本揭露內容、其應用、或用途。吾人可以種種形式來實施本揭露內容之各種教示。因此,雖然本揭露內容包含特定的範例,但本揭露內容的真實範圍不應如此受到限制,因為吾人在研究圖式、說明書、以及下列請求項時將明白其他的變化。如在此所使用,「A、B、以及C至少其中一者」的用語應被解釋為使用非排他邏輯的「或」來表示邏輯的(A或B或C)之意。吾人應瞭解在不改變本揭露內容之原則的情況下,於一方法內的一或多個步驟可以不同的順序(或同時)被執行。The above description is merely illustrative in nature, and is in no way intended to limit the content of the disclosure, its application, or use. We can implement various teachings in this disclosure in various forms. Therefore, although the content of this disclosure contains specific examples, the true scope of the content of this disclosure should not be so limited, because we will understand other changes when we study the drawings, specifications, and the following claims. As used herein, the term "at least one of A, B, and C" should be interpreted as the use of non-exclusive logical "or" to express the logical (A or B or C) meaning. We should understand that one or more steps in a method can be executed in a different order (or at the same time) without changing the principles of this disclosure.
在本申請案中,包含以下定義,「控制器」一詞可以「電路」一詞加以取代。例如在系統單晶片(system-on-chip)中,「控制器」一詞可歸類於下者、下者之部分、或包含下者:特殊應用積體電路(ASIC,Application Specific Integrated Circuit);數位、類比、或混合類比/數位離散電路;數位、類比、或混合類比/數位積體電路;組合邏輯電路;場可程式閘陣列(FPGA,field programmable gate array);用以執行碼的(共用、專用、或集體)處理器;用以儲存由處理器所執行之碼的(共用、專用、或集體)記憶體;其他用以提供所述功能的合適硬體元件;或上述其中某些或全部之組合。In this application, the following definitions are included, and the term "controller" can be replaced by the term "circuit". For example, in system-on-chip (system-on-chip), the term "controller" can be classified as the following, part of the following, or including the following: Application Specific Integrated Circuit (ASIC) ; Digital, analog, or mixed analog/digital discrete circuit; digital, analog, or mixed analog/digital integrated circuit; combinational logic circuit; field programmable gate array (FPGA, field programmable gate array); for code execution ( Shared, dedicated, or collective) processor; (shared, dedicated, or collective) memory used to store the code executed by the processor; other suitable hardware components to provide the functions; or some of the above Or a combination of all.
如以上所使用,「碼」一詞可包含軟體、韌體、及/或微碼(microcode),以及可歸類於程式、常用程式(routines)、函數、類別(classes)、及/或物件(objects)。「共用處理器」一詞包含用以執行來自多控制器之某些或全部碼的單一處理器。「集體處理器」一詞包含與額外處理器結合而用以執行來自一或多個控制器之某些或全部碼的一處理器。「共用記憶體」一詞包含用以儲存來自多控制器之某些或全部碼的單一記憶體。「集體記憶體」一詞包含與額外記憶體結合而用以儲存來自一或多個控制器之某些或全部碼的一記憶體。「記憶體」一詞可為「電腦可讀取媒體」一詞的子集合。「電腦可讀取媒體」一詞不包含透過介質傳播的暫時性電信號與電磁信號,並因此可視為有形且非暫時性。非暫時性有形電腦可讀取媒體的非限制性範例包含非揮發性記憶體、揮發性記憶體、磁性儲存器、以及光學儲存器。As used above, the term "code" can include software, firmware, and/or microcode, and can be classified into programs, routines, functions, classes, and/or objects (objects). The term "shared processor" includes a single processor used to execute some or all code from multiple controllers. The term "collective processor" includes a processor that is combined with additional processors to execute some or all of the code from one or more controllers. The term "shared memory" includes a single memory used to store some or all codes from multiple controllers. The term "collective memory" includes a memory combined with additional memory to store some or all codes from one or more controllers. The term "memory" can be a subset of the term "computer readable media". The term "computer-readable media" does not include temporary electrical and electromagnetic signals that propagate through the media, and therefore can be regarded as tangible and non-temporary. Non-limiting examples of non-transitory tangible computer-readable media include non-volatile memory, volatile memory, magnetic storage, and optical storage.
吾人可藉由一或多個電腦程式來部分地或完全地實施本申請案中所述的設備與方法,該電腦程式係藉由一或多個處理器所執行。該電腦程式包含儲存在至少一非暫時性有形電腦可讀取媒體上的處理器可執行指令。該電腦程式亦可包含及/或依靠所儲存的資料。We can partially or completely implement the equipment and methods described in this application by one or more computer programs, which are executed by one or more processors. The computer program includes processor executable instructions stored on at least one non-transitory tangible computer readable medium. The computer program may also contain and/or rely on stored data.
100‧‧‧氣化前驅物輸送系統102‧‧‧處理腔室104‧‧‧基板106‧‧‧流量控制裝置108‧‧‧殼體110‧‧‧托盤組件112-1‧‧‧托盤112-2‧‧‧托盤112-N‧‧‧托盤114-1‧‧‧開口114-2‧‧‧開口114-N‧‧‧開口120‧‧‧支撐構件130‧‧‧液體前驅物儲槽134‧‧‧閥140‧‧‧導管142-1‧‧‧開口142-2‧‧‧開口142-N‧‧‧開口150‧‧‧散裝儲槽152‧‧‧閥154‧‧‧導管162‧‧‧載氣164‧‧‧閥及/或質量流量控制器166‧‧‧導管170-1‧‧‧開口170-2‧‧‧開口170-N‧‧‧開口180‧‧‧加熱器184‧‧‧振動裝置200‧‧‧控制器204‧‧‧液位感測器208‧‧‧液位感測器250-1‧‧‧伸出部分250-2‧‧‧伸出部分250-N‧‧‧伸出部分251‧‧‧以壓力為基礎的質量流量控制器或可變孔口252‧‧‧壓力感測器254‧‧‧MFC260‧‧‧以壓力為基礎的MFC264‧‧‧可變限制孔口266‧‧‧壓力感測器300‧‧‧多托盤壓載系統310‧‧‧多托盤組件312-1‧‧‧托盤312-2‧‧‧托盤312-N‧‧‧托盤320-1‧‧‧液體開口320-2‧‧‧液體開口320-3‧‧‧液體開口324‧‧‧面朝上表面400‧‧‧方法404‧‧‧將多托盤配置在腔室內408‧‧‧將液體前驅物輸送到托盤412‧‧‧液位是否足夠?416‧‧‧可選擇地加熱或振動托盤420‧‧‧可選擇地使載氣橫越托盤流動並在托盤之間流動424‧‧‧將氣化前驅物輸送到處理腔室430‧‧‧處理是否完成?440‧‧‧停止將氣化前驅物輸送到處理腔室500‧‧‧環502-1‧‧‧凸部502-2‧‧‧凸部502-Z‧‧‧凸部504-1‧‧‧開口或噴嘴504-2‧‧‧開口或噴嘴504-Z‧‧‧開口或噴嘴530‧‧‧環534‧‧‧橫桿534-1‧‧‧橫桿534-2‧‧‧橫桿534-F‧‧‧橫桿540-1‧‧‧開口540-2‧‧‧開口540-A‧‧‧開口550‧‧‧導管550-1‧‧‧開口550-2‧‧‧開口550-N‧‧‧開口600‧‧‧分離環608‧‧‧第一環部分612-1‧‧‧凸部612-2‧‧‧凸部612-S‧‧‧凸部616-1‧‧‧開口或噴嘴616-2‧‧‧開口或噴嘴616-S‧‧‧開口或噴嘴620‧‧‧第二環部分622-1‧‧‧開口622-2‧‧‧開口622-3‧‧‧開口622-T‧‧‧開口634-1‧‧‧凸部634-2‧‧‧凸部634-R‧‧‧凸部636‧‧‧開口100‧‧‧Gasification precursor conveying system 102‧‧‧Processing chamber 104‧‧‧Substrate 106‧‧‧Flow control device 108‧‧‧Shell 110‧‧‧Tray assembly 112-1‧‧‧Tray 112- 2‧‧‧Tray 112-N‧‧‧Tray 114-1‧‧‧ Opening 114-2‧‧‧ Opening 114-N‧‧‧ Opening 120‧‧‧Supporting member 130‧‧‧Liquid precursor storage tank 134‧ ‧‧Valve 140‧‧‧Conduit 142-1‧‧‧Opening 142-2‧‧‧Opening 142-N‧‧‧Opening 150‧‧‧Bulk storage tank 152‧‧‧Valve 154‧‧‧Conduit 162‧‧‧ Carrier gas 164‧‧‧Valve and/or mass flow controller 166‧‧‧Conduit 170-1‧‧‧Opening 170-2‧‧‧Opening 170-N‧‧‧Opening 180‧‧‧Heater 184‧‧‧ Vibration device 200‧‧‧Controller 204‧‧‧Liquid level sensor 208‧‧‧Liquid level sensor 250-1‧‧‧Extended part 250-2‧‧‧Extended part 250-N‧‧‧ Extension 251‧‧‧Pressure-based mass flow controller or variable orifice 252‧‧‧Pressure sensor 254‧‧‧MFC260‧‧‧Pressure-based MFC264‧‧‧Variable restriction hole Port 266‧‧‧Pressure sensor 300‧‧‧Multi-tray ballast system 310‧‧‧Multi-tray assembly 312-1‧‧‧Tray 312-2‧‧‧Tray 312-N‧‧‧Tray 320-1‧ ‧‧Liquid opening 320-2‧‧‧Liquid opening 320-3‧‧‧Liquid opening 324‧‧‧Upper surface 400‧‧‧Method 404‧‧‧Arrangement of multiple trays in the chamber 408‧‧‧Place the liquid Is the precursor transported to the tray 412‧‧‧ sufficient? 416‧‧‧ can optionally heat or vibrate the
吾人可從詳細說明內容與隨附圖式來更加徹底瞭解本揭露內容,其中:We can get a more thorough understanding of the content of this disclosure from the detailed description and accompanying drawings. Among them:
依照本揭露內容,圖1A顯示多托盤壓載蒸氣吸引系統的一範例;According to the present disclosure, FIG. 1A shows an example of a multi-tray ballast vapor suction system;
依照本揭露內容,圖1B顯示多托盤壓載蒸氣吸引系統之部分的一範例;According to the disclosure, FIG. 1B shows an example of part of a multi-tray ballast vapor suction system;
依照本揭露內容,圖1C顯示多托盤壓載蒸氣吸引系統之部分的另一範例;According to the present disclosure, FIG. 1C shows another example of part of a multi-tray ballast steam suction system;
依照本揭露內容,圖2A顯示多托盤壓載蒸氣吸引系統的另一範例;According to the present disclosure, FIG. 2A shows another example of a multi-tray ballast vapor suction system;
依照本揭露內容,圖2B與2C顯示用於多托盤壓載蒸氣吸引系統之替代液體輸送系統的範例;According to the present disclosure, Figures 2B and 2C show an example of an alternative liquid delivery system for a multi-tray ballast vapor suction system;
依照本揭露內容,圖3顯示用以將氣化前驅物輸送至基板處理系統的方法;According to the present disclosure, FIG. 3 shows a method for transporting the vaporized precursor to the substrate processing system;
依照本揭露內容,圖4顯示包含噴嘴之環的一範例,其中這些噴嘴係朝內突出,以將載氣引導於托盤上;According to the present disclosure, FIG. 4 shows an example of a ring containing nozzles, where the nozzles protrude inward to guide the carrier gas on the tray;
依照本揭露內容,圖5A顯示包含噴嘴之環的另一範例,其中這些噴嘴係配置在橫桿上,以將載氣引導於托盤上;According to the present disclosure, FIG. 5A shows another example of a ring containing nozzles, where the nozzles are arranged on the cross bar to guide the carrier gas on the tray;
圖5B為在圖5A之其中一橫桿上之噴嘴的放大底視圖;Figure 5B is an enlarged bottom view of the nozzle on one of the bars of Figure 5A;
圖6顯示具有開口的導管,此導管用以將氣化前驅物以及載氣引導至處理腔室;及Figure 6 shows a catheter with an opening for guiding the vaporized precursor and carrier gas to the processing chamber; and
依照本揭露內容,圖7A與7B顯示分離環的範例。According to the present disclosure, FIGS. 7A and 7B show examples of the split ring.
在這些圖式中,參考符號可被重複使用,以標示相似及/或相同的元件。In these drawings, reference symbols may be used repeatedly to indicate similar and/or identical elements.
100‧‧‧氣化前驅物輸送系統 100‧‧‧Gasification precursor delivery system
102‧‧‧處理腔室 102‧‧‧Processing chamber
104‧‧‧基板 104‧‧‧Substrate
106‧‧‧流量控制裝置 106‧‧‧Flow control device
108‧‧‧殼體 108‧‧‧Shell
110‧‧‧托盤組件 110‧‧‧Tray assembly
112-1‧‧‧托盤 112-1‧‧‧Tray
112-2‧‧‧托盤 112-2‧‧‧Tray
112-N‧‧‧托盤 112-N‧‧‧Tray
114-1‧‧‧開口 114-1‧‧‧Opening
114-2‧‧‧開口 114-2‧‧‧Opening
114-N‧‧‧開口 114-N‧‧‧ Opening
120‧‧‧支撐構件 120‧‧‧Supporting member
130‧‧‧液體前驅物儲槽 130‧‧‧Liquid precursor storage tank
134‧‧‧閥 134‧‧‧valve
140‧‧‧導管 140‧‧‧Conduit
142-1‧‧‧開口 142-1‧‧‧Opening
142-2‧‧‧開口 142-2‧‧‧Opening
142-N‧‧‧開口 142-N‧‧‧Opening
150‧‧‧散裝儲槽 150‧‧‧Bulk storage tank
152‧‧‧閥 152‧‧‧valve
154‧‧‧導管 154‧‧‧Conduit
162‧‧‧載氣 162‧‧‧Carrier Gas
164‧‧‧閥及/或質量流量控制器 164‧‧‧Valve and/or mass flow controller
166‧‧‧導管 166‧‧‧Conduit
170-1‧‧‧開口 170-1‧‧‧Opening
170-2‧‧‧開口 170-2‧‧‧Opening
170-N‧‧‧開口 170-N‧‧‧Opening
180‧‧‧加熱器 180‧‧‧Heater
184‧‧‧振動裝置 184‧‧‧Vibration device
200‧‧‧控制器 200‧‧‧Controller
204‧‧‧液位感測器 204‧‧‧Liquid level sensor
208‧‧‧液位感測器 208‧‧‧Liquid level sensor
Claims (23)
Applications Claiming Priority (2)
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US14/089,009 | 2013-11-25 | ||
US14/089,009 US9334566B2 (en) | 2013-11-25 | 2013-11-25 | Multi-tray ballast vapor draw systems |
Publications (2)
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TW201919755A TW201919755A (en) | 2019-06-01 |
TWI700120B true TWI700120B (en) | 2020-08-01 |
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TW103140649A TWI654025B (en) | 2013-11-25 | 2014-11-24 | System and method for supplying vaporized precursors via multiple trays in a stacked configuration |
TW107145291A TWI700120B (en) | 2013-11-25 | 2014-11-24 | Multi-tray ballast vapor draw systems |
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TW103140649A TWI654025B (en) | 2013-11-25 | 2014-11-24 | System and method for supplying vaporized precursors via multiple trays in a stacked configuration |
Country Status (5)
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US (1) | US9334566B2 (en) |
JP (1) | JP6945269B2 (en) |
KR (1) | KR102369254B1 (en) |
CN (2) | CN109536923B (en) |
TW (2) | TWI654025B (en) |
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US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
US11926894B2 (en) * | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
WO2020010153A1 (en) | 2018-07-05 | 2020-01-09 | Lam Research Corporation | Dynamic temperature control of substrate support in substrate processing system |
KR20200020608A (en) | 2018-08-16 | 2020-02-26 | 에이에스엠 아이피 홀딩 비.브이. | Solid source sublimator |
JP7240993B2 (en) * | 2019-08-27 | 2023-03-16 | 東京エレクトロン株式会社 | Source gas supply system and source gas supply method |
US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
KR20220152274A (en) * | 2020-03-17 | 2022-11-15 | 도쿄엘렉트론가부시키가이샤 | raw material supply system |
CN116324026A (en) * | 2020-10-09 | 2023-06-23 | 朗姆研究公司 | Vapor delivery apparatus |
CN114277358B (en) * | 2021-11-12 | 2023-10-27 | 北京北方华创微电子装备有限公司 | Liquid source bottle and semiconductor process equipment |
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Also Published As
Publication number | Publication date |
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KR102369254B1 (en) | 2022-02-28 |
TW201919755A (en) | 2019-06-01 |
KR20150060566A (en) | 2015-06-03 |
JP6945269B2 (en) | 2021-10-06 |
CN104651806A (en) | 2015-05-27 |
CN109536923B (en) | 2021-08-06 |
TWI654025B (en) | 2019-03-21 |
US9334566B2 (en) | 2016-05-10 |
US20150145154A1 (en) | 2015-05-28 |
CN104651806B (en) | 2018-11-02 |
TW201532665A (en) | 2015-09-01 |
CN109536923A (en) | 2019-03-29 |
JP2015110837A (en) | 2015-06-18 |
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