CN100567563C - Chemical evaporation plating device - Google Patents
Chemical evaporation plating device Download PDFInfo
- Publication number
- CN100567563C CN100567563C CNB2005101233372A CN200510123337A CN100567563C CN 100567563 C CN100567563 C CN 100567563C CN B2005101233372 A CNB2005101233372 A CN B2005101233372A CN 200510123337 A CN200510123337 A CN 200510123337A CN 100567563 C CN100567563 C CN 100567563C
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- China
- Prior art keywords
- reactant gases
- nozzle
- reaction chamber
- operation thing
- hole
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Abstract
The present invention relates to a kind of chemical evaporation plating device (CVD), this device comprises: form the reactor of reaction chamber, this reaction chamber top has the gas stream hand-hole that is used to supply reactant gases; In described reaction chamber, be used to support the support platform of operation thing; Be used for from described gas stream hand-hole reactant gases being sprayed shower nozzle on described operation thing, that have nozzle unit, this nozzle unit is provided with a plurality of nozzle bores elongated gradually from central axis to the radial outside length of flow.Thus, the invention provides a kind of chemical evaporation plating device that can be formed uniformly vapor-deposited film.
Description
Technical field
The present invention relates to a kind of chemical evaporation plating device, relate in particular to a kind of chemical evaporation plating device that can be formed uniformly vapor-deposited film.
Background technology
Chemical vapor deposition (CVD:Chemical Vapor Deposition) device is used for manufacturing process such as semi-conductor, is reactant gases to be fed in the reaction chamber and by gas-phase chemical reaction form thin vapor-deposited film on the operation thing.This chemical evaporation plating device generally comprises: form the reactor of reaction chamber, described reaction chamber top has the gas stream hand-hole that is used to supply reactant gases; Be used in reaction chamber, supporting the support platform of operation thing; Be used at the gas stream hand-hole and support guiding between the platform and distribute reactant gases and reactant gases is sprayed to the shower nozzle of operation thing.And, by shower nozzle spray in the reactant gases of operation thing by with isoionic reaction, form vapor-deposited film on operation thing surface.
The open communique of Korean Utility Model " real 2000-0010029 number (open day: on 06 15th, 2000) " has disclosed a kind of shower nozzle that is used for the semi-conductor evaporated device.In the prior art, nozzle diameter is formed from the central authorities of nozzle body diminish gradually for reactant gases being supplied in equably semiconductor wafer, thereby make the reaction gas flow at central part and edge different to the edge.And the thickness of nozzle body is attenuation gradually from central authorities to the edge, thereby makes the length of flow of reactant gases different.
But this prior art more and more far makes thickness attenuation gradually from central authorities to the edge of nozzle body for the outflow end that makes nozzle from the distance of operation thing, thereby the spacing of the outflow end of nozzle and semiconductor wafer is unequal.In addition, prior art holds central authorities for outstanding because of reactant gases flows out, thereby causes plasmasphere inhomogeneous, and can not make nozzle body arrive the distance minimum of semiconductor wafer, thereby the quality that improves evaporation rate and vapor-deposited film is restricted.
Summary of the invention
In order to solve the existing in prior technology problem, the object of the present invention is to provide a kind of chemical evaporation plating device that can be formed uniformly vapor-deposited film.
For reaching described purpose chemical evaporation plating device provided by the present invention, it is characterized in that comprising: form the reactor of reaction chamber, this reaction chamber top has the gas stream hand-hole that is used to supply reactant gases; In described reaction chamber, be used to support the support platform of operation thing; Be used for from described gas stream hand-hole reactant gases being sprayed shower nozzle on described operation thing, that have nozzle unit, this nozzle unit is provided with elongated further to the radial outside length of flow by central axis and a plurality of nozzle bores that form.
At this, described its outflow end of a plurality of nozzle bores all equates from the spacing of described support platform, and its inflow end is more and more far away from the central axis to the radial outside from the spacing of described support platform.
And for described outflow end plane, described inflow end is arranged within 0.5 ° to the 10 ° angular range.
And described shower nozzle is provided with a gas dispenser at least, and this gas dispenser has a plurality of gas distributing holes that are used to distribute described reactant gases between described nozzle unit and described gas stream hand-hole.
Description of drawings
Fig. 1 is according to longitdinal cross-section diagram provided by the present invention;
Fig. 2 is the longitdinal cross-section diagram that flows to according to expression reactant gases in the reaction chamber provided by the present invention.
Embodiment
Below, with reference to the chemical evaporation plating device of accompanying drawing detailed description as one embodiment of the invention.
According to chemical evaporation plating device 10 provided by the present invention as shown in Figure 1, comprise: form the reactor 30 of reaction chamber 31, have the gas stream hand-hole 33 that is used to supply reactant gases in this reaction chamber 31; In reaction chamber 31, be used to support the support platform 70 of operation thing 20; Be used for reactant gases being ejected into shower nozzle 40 on the operation thing 20, that have nozzle unit 50, and described nozzle unit 50 is provided with a plurality of nozzle bores 51 more and more elongated from central axis to the radial outside length of flow from gas stream hand-hole 33.
As shown in Figure 1, chemical evaporation plating device 10 is used to the procedure in the electronic component manufacturing process, forms thin vapor-deposited film by supply reactant gases in reaction chamber 31 and through gas-phase chemical reaction on operation thing 20.Beyond any doubt, chemical evaporation plating device 10 can optionally adopt known multiple technologies, for example forms film by the reaction that makes plasma and evaporation gas on operation thing 20 in reaction chamber 31.Chemical evaporation plating device 10 also can be provided with corresponding to the size of operation thing 20.
As shown in Figure 1, operation thing 20 is accommodated in the reaction chamber 31, and can optionally comprise known elements, for example the semiconductor wafer that can be used to make multiple semi-conductor (not shown) that is made of circular silicon wafer.The size of operation thing 20 can be set to plurality of specifications as required.Therefore, according to the size of operation thing 20, will after the increase angle of nozzle bore 51 length chatted and the outflow end 55 of nozzle unit 50 and the spacing between the operation thing 20 will change.
As shown in Figure 1, reactor 30 comprises reaction chamber 31, the discharge portion 35 that is used for discharging reactant gases downwards that top has the gas stream hand-hole 33 that is used to supply reactant gases, is used for reactant gases guiding and the support platform 70 that is allocated in the shower nozzle 40 on the operation thing 20 and is used to support operation thing 20 in reaction chamber 31.
In order to keep factors such as vacuum and temperature in technological process, reaction chamber 31 is wanted and external isolation.
Gas stream hand-hole 33 is arranged at the top of reaction chamber 31 as shown in Figure 1, to be used for supply reactant gases in reaction chamber 31.Gas stream hand-hole 33 is set to one at least.
As shown in Figure 1, nozzle unit 50 is arranged in the shower nozzle 40 between gas stream hand-hole 33 and the operation thing 20, being used for that reactant gases is ejected into operation thing 20, and be provided with from the central axis to the radial outside elongated gradually a plurality of nozzle bores 51 that form of length of flow by reactant gases.And, can be ejected on the operation thing 20 from nozzle unit 50 through the reactant gases of gas dispenser 60.
As shown in Figure 1, nozzle bore 51 is arranged at nozzle unit 50, and the reactant gases that is ejected on the operation thing 20 from gas stream hand-hole 33 is passed through.Nozzle bore 51 forms by connecting nozzle unit 50.Nozzle bore 51 its outflow ends 55 equate from the spacing of supporting platform 70, and its inflow end 53 is more and more far away from the central axis to the radial outside from the spacing of supporting platform 70.For nozzle bore 51 outflow ends 55, flow into end 53 as shown in Figure 1, can be arranged within 0.5 ° to 10 ° angle (θ) scope.This angle (θ) can be changed according to the size of operation thing 20, the flow velocity of evaporation gas etc.
At this, owing to the length of flow of the reactant gases that passes through nozzle bore 51 is different, thereby reactant gases is also different by the pressure reduction that nozzle bore 51 produces.And the amount of reactant gases of the amount of reactant gases of the short length of flow nozzle bore 51 by being positioned at nozzle unit 50 central axis and the long length of flow nozzle bore 51 by being positioned at the outside is different.Reactant gases can spray in operation thing 20 surfaces successively from operation thing 20 central axis to radial outside.Therefore, reactant gases is kept for operation thing 20 integral surfaces uniformly and is flowed, thereby the vapor-deposited film on operation thing surface is evenly formed.And the outflow end 55 of nozzle bore 51 owing to all equal from the spacing of supporting platform 70, thereby can make mutual spacing minimum by outflow end 55 and operation thing 20 are close as shown in Figure 1.Thus, can on operation thing 20, form vapor-deposited film rapidly, and can between nozzle bore 51 outflow ends 55 and operation thing 20, be formed uniformly plasmasphere.
As shown in Figure 1, each gas dispenser 60a, 60b are provided with one at least, and comprise and be used for reaction gas distribution in supply gas stream hand-hole 33 of reactant gases and a plurality of gas distributing holes 61 between the nozzle unit 50.The gas distributing hole 61a, the 61b that are arranged at each gas dispenser 60a, 60b arrange alternately mutually, thereby can distribute reactant gases effectively.The sectional area of gas distributing hole 61 and arranging situation can be according to the employing various ways such as size of amount of reactant gases, operation thing 20.
According to aforesaid structure, the working process of foundation chemical evaporation plating device 10 provided by the present invention is described below with reference to Fig. 2.
At first, as shown in Figure 2, supply by gas stream hand-hole 33, then be allocated in the integral slab face equably by a plurality of gas distributing holes 61 that are formed at gas dispenser 60 when reactant gases.And reactant gases is in nozzle unit 50, connects nozzle bore 51 successively from the short central axis of length of flow to radial outside and difference is supplied on the operation thing 20.Discharge portion 35 is used for discharging gas from reaction chamber 31.Support platform 70 can make operation thing 20 near outflow end 55, and can make the spacing minimum of nozzle unit 51 outflow ends 55 to operation thing 20 according to the size of operation thing 20 etc.
In addition, it is elongated gradually to radial outside from the central axis of nozzle unit 50 to be formed length of flow according to the nozzle bore 51 of nozzle unit 50 of the present invention.Thus, reactant gases is supplied on the operation thing 20 successively, and it is stable and even that it is flowed, thereby can form uniform vapor-deposited film on operation thing 20.And, according to the present invention since the outflow end 55 of nozzle unit 50 equate from the spacing of supporting platform 70, thereby can make operation thing 20 to greatest extent near outflow end 55, can on operation thing 20 surfaces, promptly form vapor-deposited film thus, and the density of plasmasphere is formed uniformly.
As mentioned above, according to the invention provides the chemical evaporation plating device that can be formed uniformly vapor-deposited film.
Claims (4)
1, a kind of chemical evaporation plating device is characterized in that comprising:
Form the reactor of reaction chamber, this reaction chamber center upper portion has the gas stream hand-hole that is used to supply reactant gases;
In described reaction chamber, be used to support the support platform of operation thing;
Be used for reactant gases being sprayed shower nozzle on described operation thing, that have nozzle unit from described gas stream hand-hole, this nozzle unit is provided with from central axis elongated gradually to the radial outside length of flow, and outflow end equates from the spacing of described support platform, is a plurality of nozzle bores more and more far away from the central axis to the radial outside and flow into end from the spacing of described support platform.
2, chemical evaporation plating device according to claim 1 is characterized in that for described outflow end plane described inflow end is arranged within 0.5 ° to the 10 ° angular range.
3, chemical evaporation plating device according to claim 1, it is characterized in that described shower nozzle is provided with a gas dispenser at least, this gas dispenser has a plurality of gas distributing holes that are used to distribute described reactant gases between described nozzle unit and described gas stream hand-hole.
4, chemical evaporation plating device according to claim 3 is characterized in that described gas dispenser is a plurality of, and the gas distributing hole of each gas dispenser is arranged mutually alternately.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020050057623 | 2005-06-30 | ||
| KR1020050057623A KR100686724B1 (en) | 2005-06-30 | 2005-06-30 | Chemical vapor deposition apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1891855A CN1891855A (en) | 2007-01-10 |
| CN100567563C true CN100567563C (en) | 2009-12-09 |
Family
ID=37597045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101233372A Active CN100567563C (en) | 2005-06-30 | 2005-11-23 | Chemical evaporation plating device |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR100686724B1 (en) |
| CN (1) | CN100567563C (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102007026349A1 (en) * | 2007-06-06 | 2008-12-11 | Aixtron Ag | From a large number of diffusion-welded panes of existing gas distributors |
| JP2023509475A (en) * | 2020-01-06 | 2023-03-08 | ラム リサーチ コーポレーション | A showerhead with a faceplate having an internal contour |
| CN111321463B (en) | 2020-03-06 | 2021-10-15 | 北京北方华创微电子装备有限公司 | Reaction chamber |
| WO2023096817A1 (en) * | 2021-11-29 | 2023-06-01 | Lam Research Corporation | Showerhead faceplate configurations |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR19980022644U (en) * | 1996-10-29 | 1998-07-25 | 문정환 | Gas shower heads for chemical vapor deposition |
| JP3341619B2 (en) * | 1997-03-04 | 2002-11-05 | 東京エレクトロン株式会社 | Film forming equipment |
| JP3595853B2 (en) * | 1999-03-18 | 2004-12-02 | 日本エー・エス・エム株式会社 | Plasma CVD film forming equipment |
| JP4327319B2 (en) | 1999-12-24 | 2009-09-09 | 株式会社アルバック | Hinagata shower head and vacuum processing apparatus using the shower head |
| JP2002069650A (en) | 2000-08-31 | 2002-03-08 | Applied Materials Inc | Method and apparatus for vapor phase deposition, and method and device for manufacturing semiconductor device |
-
2005
- 2005-06-30 KR KR1020050057623A patent/KR100686724B1/en active IP Right Grant
- 2005-11-23 CN CNB2005101233372A patent/CN100567563C/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN1891855A (en) | 2007-01-10 |
| KR20070002218A (en) | 2007-01-05 |
| KR100686724B1 (en) | 2007-02-26 |
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