TWI697934B - Micro sample stage and its manufacturing method - Google Patents

Abstract

Provides the automation of the installation of trace samples for possible trace amounts Sample table.

Micro sample stage (1), with base (10) A sample fixing part (20) provided on the base part (10) to fix a small amount of sample, and a plurality of marking parts (40) for alignment.

Description

Micro sample table and manufacturing method thereof

The present invention relates to a micro sample table and a manufacturing method of the micro sample table.

To analyze semiconductor elements, magnetic devices, biological materials, etc., a trace sample separated from these components and materials is fixed to a trace sample stage. The micro sample fixed on the micro sample stage is analyzed for shape, structure, etc. by a transmission microscope (TEM), scanning microscope (SEM), etc., or analyzed for composition by an X-ray spectrometer, etc.

A conventional micro-sample stage has a structure in which a thin-walled micro-sample fixing part is provided on the upper surface of a semicircular metal base, for example. The trace sample is fastened to the upper surface or side surface of the trace sample fixing part. Patent Document 1 discloses a micro sample stage for fixing a small amount of samples before sample analysis.

[Prior Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Invention Patent Publication 2005-345347 Bulletin

In the micro sample stage described in Patent Document 1, it is impossible to automatically mount the micro sample to the predetermined position of the micro sample fixing part.

The micro sample stage of the present invention is provided with: a base part; a sample fixing part which is provided on the base part and fixes a micro sample; and a marking part for alignment.

The manufacturing method of the micro sample stage of the present invention is to form a micro sample stage having a base portion, a sample fixing part for fixing a minute sample, and a marking part for alignment by etching a silicon material.

According to the present invention, it becomes possible to detect the marking portion for alignment by the imaging device, and to automatically mount the trace sample at the predetermined position of the trace sample fixing portion.

1, 1A, 1B‧‧‧Micro sample stage

10‧‧‧Bottom

20‧‧‧Intermediate stage

30‧‧‧Sample fixing part

40、40A~40D‧‧‧Marking part for alignment

50‧‧‧Silicon material

53‧‧‧Protrusion

57‧‧‧Concave (ditch)

6‧‧‧Photoresist pattern

[Fig. 1] A perspective view of the appearance of the micro sample stage according to Embodiment 1 of the present invention.

[Fig. 2] A diagram for explaining the manufacturing method of the micro sample stage of Fig. 1, (a) is a cross-sectional view of the silicon material in the initial process, and (b) is a bottom view of (a).

[Fig. 3] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 2, and (b) is a bottom view of (a).

[Fig. 4] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 3, and (b) is a bottom view of (a).

[Fig. 5] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 4, and (b) is a top view of (a).

[Fig. 6] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 5, and (b) is a top view of (a).

[FIG. 7] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 6, and (b) is a top view of (a).

[FIG. 8] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 7, and (b) is a top view of (a).

[FIG. 9] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 8, and (b) is a top view of (a).

[FIG. 10] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 9, and (b) is a top view of (a).

[FIG. 11] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 10, and (b) is a top view of (a).

[FIG. 12] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 11, and (b) is a top view of (a).

[Figure 13] (a) is a cross section of the silicon material in the next procedure of Figure 12 Figure, (b) is a top view of (a).

[FIG. 14] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 13, and (b) is a top view of (a).

[FIG. 15] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 14, and (b) is a plan view of (a).

[FIG. 16] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 15, and (b) is a top view of (a).

[FIG. 17] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 16, and (b) is a plan view of (a).

[FIG. 18] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 17, and (b) is a top view of (a).

[FIG. 19] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 18, and (b) is a top view of (a).

[FIG. 20] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 19, and (b) is a top view of (a).

[Fig. 21] A perspective view showing the appearance of Embodiment 2 of the micro sample stage of the present invention.

[FIG. 22] (a) is a diagram for explaining the manufacturing method of the micro sample stage of FIG. 21, (a) is a cross-sectional view of the silicon material in the initial procedure, and (b) is a bottom view of (a).

[FIG. 23] (a) is a cross-sectional view showing the next program of FIG. 22, and (b) is a bottom view of (a).

[Fig. 24] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 23, and (b) is a bottom view of (a).

[Fig. 25] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 24, and (b) is a bottom view of (a).

[FIG. 26] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 25, and (b) is a bottom view of (a).

[Fig. 27] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 26, and (b) is a bottom view of (a).

[Fig. 28] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 27, and (b) is a bottom view of (a).

[Fig. 29] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 28, and (b) is a bottom view of (a).

[Fig. 30] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 29, and (b) is a bottom view of (a).

[Fig. 31] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 30, and (b) is a bottom view of (a).

[Fig. 32] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 31, and (b) is a bottom view of (a).

[Fig. 33] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 32, and (b) is a bottom view of (a).

[Fig. 34] (a) is a cross-sectional view of the silicon material in the next procedure of Fig. 33, and (b) is a bottom view of (a).

[FIG. 35] (a) is a cross-sectional view of the silicon material in the next procedure of FIG. 34, and (b) is a bottom view of (a).

[Fig. 36] A perspective view showing the appearance of Embodiment 3 of the micro sample stage of the present invention.

[Fig. 37] (a) and (b) are plan views from above showing modified examples of the alignment indicator portion.

-Implementation form 1-

[Structure of micro sample stage]

Hereinafter, the first embodiment of the micro sample stage 1 of the present invention will be described with reference to the drawings.

Fig. 1 is a perspective view of the appearance of Embodiment 1 of the micro sample stage 1 of the present invention.

The micro sample stage 1 has a base portion 10, three intermediate stage portions 20, three sample fixing portions 30, and three alignment indicator portions 40. The base portion 10, the three intermediate stage portions 20, the three sample fixing portions 30, and the three alignment indicator portions 40 are integrally formed of silicon.

The base portion 10 has, for example, a rectangular parallelepiped shape with a length in the longitudinal direction of about 1 mm. The shape of the base portion 10 can be semicircular, fan-shaped, or the like. The three intermediate platform portions 20 are arranged along the longitudinal direction of the base portion 10. Each intermediate stage 20 has a rectangular parallelepiped shape. The thickness of the intermediate stage portion 20 is smaller than the thickness of the base portion 10, and each intermediate stage portion 20 is arranged approximately in the center of the thickness direction of the base portion 10. The three intermediate stages 20 are formed to have substantially the same length, thickness, and height. Among them, the three intermediate stage portions 20 may be configured to have different structures in one or all of the length, thickness, and height.

A sample fixing part 30 is provided on the upper surface of each intermediate stage part 20. Each sample fixing part 30 has a rectangular parallelepiped shape. The length and thickness of the sample fixing portion 30 are smaller than the length and thickness of the intermediate stage portion 20, and each sample fixing portion 30 is arranged approximately in the center of the intermediate stage portion 20 in the thickness direction. The thickness of the sample fixing portion 30 is, for example, about 5 μm. The three sample fixing parts 30 are formed to have substantially the same length, thickness, and height. Among them, the three sample fixing parts 30 may have a structure different in length, thickness, and height, or all of them.

The upper surface 31 of each sample fixing part 30 is provided with the marking part 40 for alignment. The alignment indicator portion 40 is formed as a protrusion protruding from the upper surface 31 of the sample fixing portion 30. The protrusion of the alignment indicator 40 has a cylindrical shape. The diameter of the protrusion is smaller than the thickness of the sample fixing portion 30. The protrusions are respectively arranged on the end side in the longitudinal direction deviated from the central part of the sample fixing part 30. Moreover, each protrusion is also arrange|positioned at the side part side which deviated from the center part of the sample fixing part 30 in the thickness direction. The shape of the protrusion can also be made into an angular column. The number of the intermediate stage portion 20 and the sample fixing portion 30 is not limited to three, and two or more than four can be used. In addition, the intermediate stage portion 20 and the sample fixing portion 30 may be one.

The minute sample M is fixed to the side surface 32 extending in the longitudinal direction or the side surface 33 extending in the thickness direction of each sample fixing portion 30. The minute sample fixed to the sample fixing part 30 is analyzed by an analysis device such as TEM, SEM, or X-ray spectrometer.

In this way, in the micro sample stage 1, a plurality of alignment indicator portions 40 are formed. The marking part 40 for alignment is connected to the sample fixing part 30 The same material is formed. Among them, the alignment indicator portion 40 is formed as a protrusion protruding from the upper surface of the sample fixing portion 30. For this reason, the alignment indicator 40 can be imaged from above the sample fixing portion 30 by a camera or the like not shown, and the outline of the alignment indicator 40 can be recognized by edge extraction processing. When the outline of the marking portion 40 for alignment is recognized, the installation position of the micro sample can be calculated by calculation. In addition, although not shown in the figure, a small amount of sample can be transferred by a holder such as a probe and attached to a predetermined position of the sample fixing part 30. Thereby, the installation of the micro sample to the micro sample stage 1 can be automated. By automating the installation of the micro sample to the micro sample stage 1, the analysis operation of the micro sample can be automated, and the efficiency of the operation can be achieved.

[Manufacturing method of micro sample stand]

2 to 20, the manufacturing method of the micro sample stage 1 illustrated in FIG. 1 will be described.

First, a silicon material 50 whose length, thickness, and height are each larger than the micro sample stage 1 is prepared.

In addition, as shown in FIG. 2(a) and (b), a photoresist pattern 61 is formed by photolithography technology. Fig. 2(a) is a cross-sectional view of the silicon material 50, and Fig. 2(b) is a bottom view of Fig. 2(a). In addition, the photolithography technology is a technology in which a photoresist is used to attach a film, and a mask is used for exposure and development to form a photoresist pattern corresponding to the shape of the mask.

The photoresist pattern 61 is formed by forming a rectangular opening 61b in the center of the outer peripheral portion 61a exposing the lower surface of the silicon material 50, and the rectangular center portion 61c is separated from the outer peripheral portion 61a in the center of the opening 61b. pattern. The planar shape and size of the central portion 61c are made the same as the planar shape and size of the base portion 10 of the micro sample stage 1.

Fig. 3(a) is a cross-sectional view of the silicon material 50 in the next procedure of Fig. 2, and Fig. 3(b) is a bottom view of Fig. 3(a).

By dry etching, the silicon material 50 exposed from the opening 61 b of the photoresist pattern 61 is etched to form a frame-shaped groove 51 in the silicon material 50.

4(a) is a cross-sectional view of the silicon material 50 in the next procedure of FIG. 3, and FIG. 4(b) is a bottom view of FIG. 4(a).

By washing, the photoresist pattern 61 formed on the lower surface of the silicon material 50 is removed.

FIG. 5(a) is a cross-sectional view of the silicon material 50 in the next procedure of FIG. 4, and FIG. 5(b) is a top view of FIG. 5(a).

The silicon material 50 is oxidized, and an insulating film 62 for covering is formed on the entire surface of the silicon material 50. That is, the insulating film 62 for covering is formed of silicon oxide.

Fig. 6(a) is a cross-sectional view of the silicon material 50 in the next procedure of Fig. 5, and Fig. 6(b) is a top view of Fig. 6(a).

In the insulating film 62 for covering formed on the entire surface of the silicon material 50, the upper part 62a (refer to FIG. 5(a)) formed on the upper surface 52 of the silicon material 50 is removed to make the upper surface 52 of the silicon material 50 exposure. The removal of the upper portion 62a of the insulating film 62 for covering is performed, for example, by dry etching. The removal of the upper part 62a of the insulating film 62 for covering can also be performed by wet etching.

Figure 7(a) is the silicon material 50 in the next procedure of Figure 6 Sectional view, Fig. 7(b) is a top view of Fig. 7(a).

On the upper surface 52 of the exposed silicon material 50, a photoresist pattern 63 is formed by photolithography. The photoresist pattern 63 has a rectangular pattern 63a, three rectangular openings 63b linearly arranged approximately in the center of the rectangular pattern 63a, and one circular pattern 63c formed in each rectangular opening 63b. The planar shape and size of the rectangular opening 63b are made the same as the planar shape and size of the sample fixing part 30. The planar shape and size of the circular pattern 63c are made the same as those of the alignment indicator 40.

Fig. 8(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 7, and Fig. 8(b) is a top view of Fig. 8(a).

Using the photoresist pattern 63 as a mask, the upper surface 52 of the silicon material 50 is removed by dry etching or the like. The depth of the removal is the same as the height of the marking portion 40 for alignment. As shown in the following procedure, the protrusion 53 of the silicon material 50 formed at the lower part of the circular pattern 63c is formed as the alignment indicator 40 of the micro sample stage 1.

Fig. 9(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 8, and Fig. 9(b) is a top view of Fig. 9(a).

On the entire upper surface 52 of the silicon material 50 on which the photoresist pattern 63 is formed, an insulating film 64 for marking formation is formed. The mark formation insulating film 64 is formed of a silicon oxide film, for example, formed by sputtering. The insulating film 64 for marking formation has a portion 64a on the rectangular pattern 63a on the upper surface 52 of the silicon material 50, a portion 64c on the three circular patterns 63c, a rectangular portion 64b in the three rectangular openings 63b, And the outer peripheral portion of the rectangular pattern 63a Points 64d. As described above, the planar shape and size of the rectangular opening 63 b of the photoresist pattern 63 are the same as the planar shape and size of the sample fixing portion 30. Therefore, the planar shape and size of each rectangular portion 64 b of the insulating film 64 for marking formation are the same as the planar shape and size of the sample fixing portion 30.

Fig. 10(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 9, and Fig. 10(b) is a top view of Fig. 10(a).

By peeling, the portions 64 a and 64 c of the marking formation insulating film 64 are removed from the upper surface 52 of the silicon material 50 together with the photoresist pattern 63. Thereby, among the upper surface 52 of the silicon material 50, a part 52a located below the rectangular pattern 63a and a part 53a located below the circular pattern 63c are exposed. Among them, the portions 64 b and 64 d of the insulating film 64 for marking formation remain on the upper surface 52 of the silicon material 50.

Fig. 11(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 10, and Fig. 11(b) is a top view of Fig. 11(a).

On the entire upper surface 52 of the silicon material 50, a metal film 65 such as aluminum is formed by sputtering or the like. Thereby, the portions 64b, 64d of the marking-forming insulating film 64 formed on the upper surface 52 of the silicon material 50 and the portions 52a, 53a of the upper surface 52 of the silicon material 50 exposed from the marking-forming insulating film 64 are formed by The metal film 65 is covered.

Fig. 12(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 11, and Fig. 12(b) is a top view of Fig. 12(a).

On the metal film 65, three photoresist patterns 66 are formed using photolithography technology. Each photoresist pattern 66 is formed on the upper surface of the covering silicon material 50 The position and size of a part 53a of 52 and its surroundings.

Fig. 13(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 12, and Fig. 13(b) is a top view of Fig. 13(a).

Using the three photoresist patterns 66 as masks, the metal film 65 is etched. Thereby, only a part 65a of the lower part of the photoresist pattern 66 of the metal film 65 remains, and a part 52a of the upper surface 52 of the silicon material 50 is exposed. Among them, a part 53 a of the upper surface 52 of the silicon material 50 corresponding to the three metal films 65 and its surroundings are covered by the metal film 65 and the photoresist pattern 66.

Fig. 14(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 13, and Fig. 14(b) is a top view of Fig. 14(a).

Remove three photoresist patterns 66.

Fig. 15(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 14, and Fig. 15(b) is a top view of Fig. 15(a).

A photoresist pattern 67 is formed on the upper surface 52 of the silicon material 50 on which a part 65a of the metal film 65 is formed.

The photoresist pattern 67 has a rectangular outer peripheral pattern 67a, an opening 67b formed substantially in the center of the outer peripheral pattern 67a, and three inner patterns 67c formed in the opening 67b. Each inner pattern 67c is formed by covering a part 65a of the metal film 65, the rectangular part 64b of the insulating film 64 for marking formation, and the surroundings thereof. The planar shape and size of each inner pattern 67c are made to be the same as the planar shape and size of the intermediate stage portion 20 of the micro sample stage 1.

Fig. 16(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 15, and Fig. 16(b) is a top view of Fig. 16(a).

Using the photoresist pattern 67 as a mask, a part 52 a of the upper surface 52 of the silicon material 50 is removed by dry etching or the like to form a frame-shaped groove 54 in the silicon material 50. The depth of the groove 54 is made higher than the height of the sample fixing part 30. Among them, the depth of the groove 54 is made so that an inter-groove portion 56 is formed between the groove 54 and the groove portion 51 so as not to reach the groove portion 51.

Fig. 17(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 16, and Fig. 17(b) is a top view of Fig. 17(a).

The photoresist pattern 67 is removed, and the outer peripheral part 64d of the insulating film 64 for marking formation and the part 65a of the metal film 65 are exposed.

Fig. 18(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 17, and Fig. 18(b) is a top view of Fig. 18(a).

The outer peripheral portion 64d of the marking formation insulating film 64, the part 65a of the metal film 65, and the rectangular part 64b of the marking formation insulating film 64 are used as masks, and a part 52a of the upper surface 52 of the silicon material 50 It is removed by dry etching, and an inner groove 55 is formed inside the groove 54. The planar shape and size of each rectangular portion 64b of the marking formation insulating film 64 are the same as the planar shape and size of the sample fixing portion 30. For this reason, three sample fixing parts 30 are formed inside the inner groove 55 of the silicon material 50. In addition, by dry etching, the inter-groove portion 56 between the groove 54 and the groove portion 51 of the silicon material 50 is also removed in the thickness direction. Between the groove 54 and the groove portion 51, only the insulating film 62 for masking remains. The depth of the inner groove 55 is made the same as the height of the sample fixing part 30. In addition, in this state, the upper surface of the protrusion 53 of the silicon material 50 is covered by a part 65a of the metal film 65, and the protrusion 53 of the silicon material 50 is made of silicon When a part 52a of the upper surface 52 of the material 50 is removed by dry etching, it will not be etched.

Fig. 19(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 18, and Fig. 19(b) is a top view of Fig. 19(a).

By etching, a part 65a of the metal film 65 formed on a part 52a of the upper surface 52 of the silicon material 50 is etched. Thereby, a part 53a of the upper surface 52 of the silicon material 50 is exposed to the outside.

Fig. 20(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 19, and Fig. 20(b) is a bottom view of Fig. 20(a).

By wet etching, the marking formation insulating film 64 and the covering insulating film 62 formed on the surface of the silicon material 50 are removed. The marking formation insulating film 64 and the covering insulating film 62 are formed of a silicon oxide film, so the silicon oxide film is wet-etched to remove the parts 64c and 64d of the marking formation insulating film 64 and the covering insulating film 62 All. The portions 64 c and 64 d of the marking formation insulating film 64 are removed so that the upper surface 31 of the sample fixing part 30 protrudes as the alignment marking part 40 to form a protrusion 53. In addition, the insulating film 62 for masking is removed, so that the central area of the silicon material 50 is separated from the surrounding part, and is formed on the micro-sample stage 1 shown in FIG. 1.

According to the first embodiment of the present invention described above, the following effects are exhibited.

(1) The micro sample table 1 is provided with a base 10, a sample fixing part 30 for fixing a micro sample, and a plurality of marking parts 40 for alignment. For this reason, the alignment indicator 40 can be read by an imaging device such as a camera, and the position of the sample fixing portion 30 can be detected by calculation, and the micro sample can be positioned on the sample The predetermined position of the fixed portion 30. Thereby, it is possible to automate the installation of the trace sample to the trace sample stage 1, and the efficiency of the work can be achieved.

(2) The micro sample stage 1 has a structure in which the base portion 10, the sample fixing portion 30, and a plurality of alignment indicator portions 40 are integrally formed of the same material. For this reason, a plurality of marking portions 40 for alignment can be formed quickly by etching or the like, and the production of the micro sample stage 1 becomes efficient.

(3) In the above (2), when the material is silicon, it can be formed with high precision.

(4) A configuration in which a plurality of sample fixing portions 30 are provided on the base portion 10, and a plurality of sample fixing portions 30 are provided with a marking portion 40 for alignment. For this reason, each minute sample can be attached to the vicinity of the alignment indicator 40, and position alignment becomes easy. In addition, with this, the accuracy of position alignment can be improved.

(5) The alignment indicator portion 40 is provided on the upper surface 31 of the sample fixing portion 30, so that photography with a camera or the like becomes easy. In addition, the alignment indicator 40 is arranged on the side of the upper surface 31 of the sample fixing portion 30 that deviates from the central portion. Therefore, when a small amount of sample is fixed to the upper surface 31 of the sample fixing portion 30, the alignment The indicator portion 40 still does not become an obstacle when fixing a small amount of sample.

(6) The alignment indicator portion 40 is formed as a protrusion 63 protruding from the upper surface 31 of the sample fixing portion 30. For this reason, even if the entire micro-sample stage 1 is formed of the same material, the alignment indicator 40 can be imaged, and the outline of the alignment indicator 40 can be recognized by edge extraction processing.

-Implementation form 2-

[Structure of micro sample stage]

The second embodiment of the micro sample stage of the present invention will be described with reference to the drawings.

Fig. 21 is an external perspective view of Embodiment 2 of the micro sample stage 1A of the present invention.

The micro sample stage 1A of the second embodiment is different from the first embodiment in that the alignment indicator 40A is formed as a recess 57 (refer to FIG. 35). The micro sample stage 1A of the second embodiment is the same as that of the first embodiment except for the above, and the same reference numerals are attached to the corresponding members, and the description is omitted.

The alignment indicator portion 40A of the second embodiment is attached to the upper surface 31 of each sample fixing portion 30, and one is formed for each. The alignment indicator 40A is a circular recess 57 (refer to FIG. 34(a)). The planar shape and position of the alignment indicator portion 40A may be the same as or different from the alignment indicator portion 40 of the first embodiment. As the depth of the recess 57 of the alignment indicator 40A, as long as the alignment indicator 40 can be imaged and the edge extraction process can be performed, there is no particular requirement.

[Manufacturing method of micro sample stand]

22 to 36, the manufacturing method of the micro sample stage 1 illustrated in FIG. 21 will be described.

The manufacturing method of the micro sample stage 1A is shown in the process of FIGS. 22 to 30 The procedure is the same as the procedure shown in FIGS. 2 to 10 of the manufacturing method of the micro sample stage 1 of the first embodiment.

Therefore, the description of the program shown in FIGS. 22 to 30 is omitted.

In the state shown in FIG. 30, a frame-shaped groove 51 is formed on the lower side of the silicon material 50, and an insulating film 64 for marking formation is formed on the upper surface 52 of the silicon material 50. The mark formation insulating film 64 has an outer peripheral portion 64d and a rectangular portion 64b. Between the outer peripheral portion 64d and the rectangular portion 64c, parts 52a and 53a of the upper surface 52 of the silicon material 50 are exposed.

Fig. 31(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 30, and Fig. 31(b) is a bottom view of Fig. 31(a).

In a state where a portion 52a of the upper surface 52 of the silicon material 50 is exposed from the mark formation insulating film 64, a photoresist pattern 71 is formed on the upper surface 52 of the silicon material 50 by photolithography.

The photoresist pattern 71 has a rectangular outer peripheral pattern 71a, an opening 71b formed substantially in the center of the outer peripheral pattern 71a, and three inner patterns 71c formed in the opening 71b. The inner pattern 71c is formed by covering the three portions 64b of the label forming insulating film 64 shown in FIG. 30 and the surroundings thereof. The planar shape and size of each inner pattern 71c are made the same as the planar shape and size of the intermediate stage portion 20 of the micro sample stage 1.

Fig. 32(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 31, and Fig. 32(b) is a bottom view of Fig. 32(a).

Using the photoresist pattern 71 as a mask, a part 52a of the upper surface 52 of the silicon material 50 is removed by dry etching or the like to form a frame on the silicon material 50 形的沟54。 54. The depth of the groove 54 is made higher than the height of the sample fixing part 30. Among them, the depth of the groove 54 is made so that an inter-groove portion 56 is formed between the groove 54 and the groove portion 51 so as not to reach the groove portion 51.

Fig. 33(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 32, and Fig. 33(b) is a bottom view of Fig. 33(a).

The photoresist pattern 71 formed on the upper surface 52 of the silicon material 50 is removed. The photoresist pattern 71 is removed, so that a part 53a of the upper surface 52 of the silicon material 50 is exposed.

Fig. 34(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 33, and Fig. 34(b) is a bottom view of Fig. 34(a).

The outer peripheral portion 64d and the rectangular portion 64b of the marking formation insulating film 64 are used as masks, and parts 52a and 53a of the upper surface 52 of the silicon material 50 are removed by dry etching. A part 52 a of the upper surface 52 of the silicon material 50 is dry-etched to form an inner groove 55 inside the groove 54. The planar shape and size of each rectangular portion 64b of the marking formation insulating film 64 are the same as the planar shape and size of the sample fixing portion 30. For this reason, three sample fixing parts 30 are formed inside the inner groove 55 of the silicon material 50. In addition, a part 53 a of the upper surface 52 of the silicon material 50 is dry-etched to form a recess 57 in the silicon material 50. The recess 57 serves as an alignment indicator 40A. In addition, by dry etching, the inter-groove portion 56 between the groove 54 and the groove portion 51 of the silicon material 50 is also removed in the thickness direction. Between the groove 54 and the groove portion 51, only the insulating film 62 for masking remains. The depth of the inner groove 55 is made the same as the height of the sample fixing part 30.

Fig. 35(a) is a cross-sectional view of the silicon material in the next procedure of Fig. 34, and Fig. 35(b) is a bottom view of Fig. 35(a).

By wet etching, the marking formation insulating film 64 and the covering insulating film 62 formed on the surface of the silicon material 50 are removed. The marking formation insulating film 64 and the covering insulating film 62 are formed of a silicon oxide film. Therefore, the silicon oxide film is wet-etched to remove the parts 64b and 64d of the marking formation insulating film 64 and the covering insulating film 62 All. The portions 64 b and 64 d of the marking formation insulating film 64 are removed so that the recess 57 is formed as the alignment marking part 40A on the upper surface of the sample fixing part 30. In addition, the insulating film 62 for masking is removed, so that the central area of the silicon material 50 is separated from the surrounding part, and the micro-sample stage 1A shown in FIG. 21 is formed.

In the micro sample stage 1A of the second embodiment, together with the base portion 10 and the sample fixing portion 30 formed of silicon, a plurality of alignment indicator portions 40A are formed. The alignment indicator 40A is provided on the upper surface 31 of the plurality of sample fixing portions 30 each. The respective alignment indicator portions 40A are arranged on the side of the upper surface 31 of the sample fixing portion 30 deviated from the central portion. Therefore, the micro sample table 1A of the second embodiment exerts the same effects (1), (3) to (6) as the micro sample table 1 of the first embodiment.

-Implementation form 3-

Fig. 36 is a perspective view showing the appearance of Embodiment 3 of the micro sample stage 1B of the present invention.

In the micro sample stage 1B of the third embodiment, the alignment indicator 40B is formed on each intermediate stage 20, and the alignment indicator 40B is formed as a chamfer of the corner of the intermediate stage 20, which is different from the first and second embodiments. The micro sample stage 1B of the third embodiment is the same as that of the first embodiment except for the above, and the same reference numerals are attached to the corresponding members, and the description is omitted.

That is, the alignment indicator portion 40B is chamfered on the upper surface 21 of each intermediate stage portion 20 and the corner portion of the one side surface 22 orthogonal to the arrangement direction of the intermediate stage portion 20. The alignment indicator 40B formed into such a chamfer can also detect its position by imaging with a camera. Therefore, the micro sample table 1B of the third embodiment exerts the same effect as the micro sample table 1A of the second embodiment.

In addition, in the micro sample stage 1B of the third embodiment, the alignment indicator 40B formed in the intermediate stage 20 may be the protrusion 53 shown in the first embodiment or the recess 57 shown in the second embodiment. .

Conversely, the protrusion 53 as the alignment indicator 40 of the first embodiment, the recess 57 as the alignment indicator 40A of the second embodiment, and the like are also the alignment indicator 40B of the chamfered structure shown in the third embodiment. can.

The marking parts 40, 40A, and 40B for alignment may be cut grooves. In this specification, it is defined as a groove including recesses and notches.

The marking portions 40, 40A, and 40B for alignment may also be provided on the base portion 10.

The micro-sample fixing tables 1, 1A, and 1B of the above-mentioned embodiment have a structure in which three alignment indicator portions 40, 40A, and 40B are provided. Exemplify. However, it is only necessary to form one alignment indicator portion 40, 40A, 40B on the micro-sample fixing table 1, 1A, 1B.

Figs. 37 (a) and (b) are plan views from above showing modified examples of the alignment indicator portions 40, 40A, and 40B, respectively. Fig. 37(a) shows an L-shaped alignment indicator portion 40C. In addition, FIG. 37(b) shows a +-shaped alignment indicator portion 40D. The alignment indicator portions 40C, 40D have two sides orthogonal to each other, so the two sides can be detected to calculate the direction of the micro sample stage 40, 40A. The alignment indicator portions 40C and 40D may be replaced with the circular protrusion 53 shown in the first embodiment or the circular recess 57 shown in the second embodiment.

The plurality of alignment marking portions 40, 40A, and 40B may be formed in different forms such as protrusions and grooves.

The micro-sample fixing tables 1, 1A, and 1B of the above-described embodiment are exemplified by the structure in which the intermediate table portion 20 is provided between the base portion 10 and the sample fixing portion 30. However, it is also possible to form a structure in which the sample fixing portion 30 is directly formed on the base portion 10 without providing the intermediate stage portion 20. In addition, it is also possible to make a structure in which the intermediate stage portion 20 of plural steps is provided.

The micro-sample fixing tables 1, 1A, and 1B of the above-described embodiment are exemplified by a structure in which three sample fixing portions 30 are provided on the base portion 10. However, one sample fixing part 30 may be used.

In the foregoing, although various implementation forms and modified examples have been described, the present invention is not limited to these contents. Other aspects conceived within the scope of the technical idea of the present invention are also included in the scope of the present invention.

1‧‧‧Micro sample table

10‧‧‧Bottom

20‧‧‧Intermediate stage

30‧‧‧Sample fixing part

31‧‧‧Upper surface

32‧‧‧Long side side

33‧‧‧The side of the thickness direction

40‧‧‧Marking part for alignment

Claims (7)

A micro sample table, which fixes a micro sample when analyzing a micro sample through an analysis device, is provided with: a base part; a plurality of intermediate table parts protruding from the upper surface of the aforementioned base part; and a micro sample fixing part from each The upper surface of the intermediate table portion protrudes and has a length direction and a width direction; and an alignment mark portion, which is associated with each micro-sample fixing portion and is formed on the upper surface of the aforementioned micro-sample fixing portion; At least two of the micro-sample fixing portions are provided with individual alignment indicator portions in one-to-one correspondence, and the alignment indicator portions are arranged at the ends of each of the micro-sample fixing portions in the longitudinal direction, and It is arrange|positioned so that it may deviate from the center part of each said micro-sample fixing part in the width direction. For example, the micro sample stage of the first item in the scope of the patent application, wherein the plurality of intermediate stage parts, the micro sample fixing part, and the alignment indicator part all constitute one body formed of the same material. For example, the micro sample stage of the first item in the scope of the patent application, wherein the aforementioned plural intermediate stage parts, the micro sample fixing part, and the marking part for alignment are all formed of silicon. For example, the micro sample stage of the first item in the scope of patent application, wherein the aforementioned marking portion for alignment is a protrusion or a groove. For example, the micro sample stage of the first item in the scope of patent application, wherein the aforementioned alignment mark is an inverted surface provided on the upper surface of the aforementioned micro sample fixing portion angle. A method for manufacturing a micro-sample stage, wherein the micro-sample stage is used to fix the micro-sample when the micro-sample is analyzed through an analysis device. The manufacturing method includes: forming a micro-sample stage with a base by etching silicon material, and A plurality of intermediate stage portions protruding from the upper surface, a plurality of micro-sample fixing portions protruding from the upper surface of each of the aforementioned intermediate stage portions and fixing a minute sample, and plural numbers formed on the upper surface of each of the aforementioned minute-sample fixing portions At least two alignment markers, wherein at least two of the micro-sample fixing portions are provided with individual alignment markers in a one-to-one correspondence, and the alignment markers are arranged in the longitudinal direction of the micro-sample fixing portion The ends of each are arranged in the width direction so as to deviate from the center of each of the above-mentioned micro-sample fixing portions. For example, the manufacturing method of the micro sample stage in the scope of the patent application, wherein the aforementioned marking portion for alignment is a protrusion, a groove or a chamfer.

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