TWI697664B - 透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 - Google Patents
透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 Download PDFInfo
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- TWI697664B TWI697664B TW105115037A TW105115037A TWI697664B TW I697664 B TWI697664 B TW I697664B TW 105115037 A TW105115037 A TW 105115037A TW 105115037 A TW105115037 A TW 105115037A TW I697664 B TWI697664 B TW I697664B
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- 238000005499 laser crystallization Methods 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 118
- 238000012545 processing Methods 0.000 claims description 80
- 238000013139 quantization Methods 0.000 claims description 29
- 238000002425 crystallisation Methods 0.000 claims description 24
- 230000008025 crystallization Effects 0.000 claims description 24
- 238000011002 quantification Methods 0.000 claims description 21
- 238000005286 illumination Methods 0.000 claims description 14
- 238000007781 pre-processing Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 claims description 3
- 230000002452 interceptive effect Effects 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 26
- 230000008569 process Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 7
- 239000010409 thin film Substances 0.000 description 7
- 239000010408 film Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 238000012935 Averaging Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Electromagnetism (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Recrystallisation Techniques (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Laser Beam Processing (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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KR1020150081433A KR101939058B1 (ko) | 2015-06-09 | 2015-06-09 | 레이저 결정화 설비에 기인하는 무라 정량화 시스템 및 레이저 결정화 설비에 기인하는 무라 정량화 방법 |
KR10-2015-0081433 | 2015-06-09 |
Publications (2)
Publication Number | Publication Date |
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TW201730549A TW201730549A (zh) | 2017-09-01 |
TWI697664B true TWI697664B (zh) | 2020-07-01 |
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ID=57612940
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TW105115037A TWI697664B (zh) | 2015-06-09 | 2016-05-16 | 透過雷射結晶設備的雲紋量化系統及透過雷射結晶設備的雲紋量化方法 |
Country Status (4)
Country | Link |
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JP (1) | JP2017005252A (ko) |
KR (1) | KR101939058B1 (ko) |
CN (1) | CN106252259A (ko) |
TW (1) | TWI697664B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106706641B (zh) * | 2016-12-30 | 2020-08-04 | 武汉华星光电技术有限公司 | 一种多晶硅薄膜的质量检测方法和系统 |
KR102516486B1 (ko) * | 2017-12-05 | 2023-04-03 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 |
CN110993491B (zh) * | 2019-12-19 | 2023-09-26 | 信利(仁寿)高端显示科技有限公司 | 一种准分子激光退火制程oed的自动校正方法 |
KR20230144825A (ko) | 2022-04-08 | 2023-10-17 | 공주대학교 산학협력단 | 레이저 어닐 공정의 기판 결정 상태 모니터링 시스템 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031229A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Corp | 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法 |
JP2004311992A (ja) * | 2003-03-26 | 2004-11-04 | Semiconductor Energy Lab Co Ltd | 評価方法、半導体装置及びその作製方法 |
KR20070115064A (ko) * | 2006-05-30 | 2007-12-05 | (주) 인텍플러스 | 광학식 검사 방법 |
TW201505070A (zh) * | 2013-07-10 | 2015-02-01 | Samsung Display Co Ltd | 執行雷射結晶之方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2722540B2 (ja) * | 1988-10-25 | 1998-03-04 | 松下電器産業株式会社 | 厚膜印刷パターンの外観検査方法 |
JPH0618956U (ja) * | 1992-08-21 | 1994-03-11 | オリンパス光学工業株式会社 | 外観検査用斜照明装置 |
US5640237A (en) * | 1995-08-29 | 1997-06-17 | Kla Instruments Corporation | Method and apparatus for detecting non-uniformities in reflective surafaces |
JP4566374B2 (ja) * | 2000-09-22 | 2010-10-20 | イビデン株式会社 | 画像処理検査方法 |
KR100570268B1 (ko) | 2003-11-28 | 2006-04-11 | 주식회사 쓰리비 시스템 | 특징점 강도를 이용한 플랫패널용 광관련판요소의 부정형성 얼룩 검출방법 |
JP2009064944A (ja) * | 2007-09-06 | 2009-03-26 | Sony Corp | レーザアニール方法、レーザアニール装置および表示装置の製造方法 |
JP5641545B2 (ja) * | 2011-02-23 | 2014-12-17 | 株式会社日本製鋼所 | 薄膜の表面検査方法および検査装置 |
CN104465345A (zh) * | 2014-12-29 | 2015-03-25 | 深圳市华星光电技术有限公司 | 激光结晶系统及其晶化能量控制方法 |
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2015
- 2015-06-09 KR KR1020150081433A patent/KR101939058B1/ko active IP Right Grant
-
2016
- 2016-05-16 TW TW105115037A patent/TWI697664B/zh not_active IP Right Cessation
- 2016-06-07 JP JP2016113366A patent/JP2017005252A/ja active Pending
- 2016-06-08 CN CN201610404682.1A patent/CN106252259A/zh active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000031229A (ja) * | 1998-07-14 | 2000-01-28 | Toshiba Corp | 半導体薄膜の検査方法及びそれを用いた半導体薄膜の製造方法 |
JP2004311992A (ja) * | 2003-03-26 | 2004-11-04 | Semiconductor Energy Lab Co Ltd | 評価方法、半導体装置及びその作製方法 |
KR20070115064A (ko) * | 2006-05-30 | 2007-12-05 | (주) 인텍플러스 | 광학식 검사 방법 |
TW201505070A (zh) * | 2013-07-10 | 2015-02-01 | Samsung Display Co Ltd | 執行雷射結晶之方法 |
Also Published As
Publication number | Publication date |
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JP2017005252A (ja) | 2017-01-05 |
CN106252259A (zh) | 2016-12-21 |
KR20160145249A (ko) | 2016-12-20 |
KR101939058B1 (ko) | 2019-01-17 |
TW201730549A (zh) | 2017-09-01 |
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