TWI695202B - High adhesive strength liquid crystal polymer laminate and the preparation method thereof - Google Patents

High adhesive strength liquid crystal polymer laminate and the preparation method thereof Download PDF

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TWI695202B
TWI695202B TW108117144A TW108117144A TWI695202B TW I695202 B TWI695202 B TW I695202B TW 108117144 A TW108117144 A TW 108117144A TW 108117144 A TW108117144 A TW 108117144A TW I695202 B TWI695202 B TW I695202B
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liquid crystal
adhesive layer
crystal polymer
dielectric adhesive
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TW202011087A (en
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何家華
杜伯賢
林志銘
李建輝
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亞洲電材股份有限公司
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/04Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B15/00Layered products comprising a layer of metal
    • B32B15/20Layered products comprising a layer of metal comprising aluminium or copper
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/09Use of materials for the conductive, e.g. metallic pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding

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  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
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Abstract

A high adhesive strength liquid crystal polymer (LCP) laminate comprises at least one copper foil layer, at least one low dielectric adhesive layer, and a LCP layer, wherein the low dielectric adhesive layer is between the copper foil layer and the LCP layer and bonds them together, wherein the Dk value (10GHz) of the low dielectric adhesive layer is 2.0-4.0 and the Df value (10GHz) is 0.001-0.010, and the Dk value (10GHz) of the LCP layer is 2.5-4.0 and the Df value (10GHz) is 0.001-0.010. The LCP laminate provided by the present invention is improved the adhesive strength by adding the low dielectric adhesive layer between a copper foil layer and a LCP layer, so that a copper foil layer with a lower Rz value can be selected and hard to cause signal loss in high frequency and high speed transmission. Moreover, the low dielectric adhesive layer has low dielectric constant and dielectric loss, and is likewise beneficial for high frequency and high speed transmission.

Description

高接著強度的液晶高分子基板及其製備方法 High adhesive strength liquid crystal polymer substrate and preparation method thereof

本發明係有關於FPC(Flexible Printed Circuit,軟性印刷線路板)及其製備技術領域,尤係涉及LCP(液晶高分子)單面及雙面銅箔基板。 The present invention relates to the field of FPC (Flexible Printed Circuit) and its preparation technology, and particularly relates to LCP (liquid crystal polymer) single-sided and double-sided copper foil substrates.

軟性印刷線路板因具有可連續自動化生產、可提高配線密度、可撓性、設計領域大、可以三次元立體配線、能省略接線器、電線之焊接等優勢,符合電子產品輕薄短小且功能多元的需求,讓軟板應用與日俱增。 The flexible printed circuit board has the advantages of continuous automated production, improved wiring density, flexibility, large design field, three-dimensional three-dimensional wiring, omitted connectors, and welding of wires. It is in line with the light and thin electronic products with multiple functions Demand has increased the application of FPC.

隨著高頻高速傳輸需求激增及5G時代即將來臨,高性能工程塑料需求大幅提升。過去軟性銅箔基板主要是以銅箔及聚醯亞胺(PI)樹脂等原料製成,但PI膜介電高、易吸濕,在高頻高速傳輸下易造成訊號損失。而液晶高分子(LCP)材料因具備低吸濕、高耐化性、高尺寸安定性與低介電常數/介電損失因子(Dk/Df)等特性,其介電性能低損耗、低吸水性 在微波及高頻的毫米波均較傳統PI有明顯優勢,逐漸成為新應用材料,可應用於天線、基地台、毫米波雷達等。 With the surge in demand for high-frequency and high-speed transmission and the coming of the 5G era, the demand for high-performance engineering plastics has increased substantially. In the past, flexible copper foil substrates were mainly made of copper foil and polyimide (PI) resin and other raw materials. However, PI films have high dielectric properties and are easy to absorb moisture, which is likely to cause signal loss under high-frequency and high-speed transmission. The liquid crystal polymer (LCP) material has characteristics such as low moisture absorption, high chemical resistance, high dimensional stability, low dielectric constant/dielectric loss factor (Dk/Df), and low dielectric loss and low water absorption The microwave and high-frequency millimeter waves have obvious advantages over traditional PI, and gradually become a new application material, which can be applied to antennas, base stations, and millimeter-wave radars.

然而,和PI相比,LCP與銅箔之間的接著力較差,故LCP基板通常選用表面較粗糙、Rz(表面粗糙度)值較高的銅箔以提升接著強度。然而在高頻高速傳輸時的集膚效應(skin effect),使電子傳輸傾向在銅箔表面進行,若表面較粗糙,則會形成較大的訊號損失。故如何提升LCP層與銅箔層的接著強度,使基板製作時可選用Rz值較低的銅箔以降低訊號損失,是LCP基板發展的重要議題。 However, compared with PI, the adhesion between LCP and copper foil is poor, so LCP substrates usually use copper foil with a rough surface and a high Rz (surface roughness) value to improve the adhesion strength. However, the skin effect during high-frequency and high-speed transmission makes the electron transmission tend to proceed on the surface of the copper foil. If the surface is rough, a large signal loss will be formed. Therefore, how to improve the bonding strength of the LCP layer and the copper foil layer, so that the copper foil with a lower Rz value can be used to reduce the signal loss when manufacturing the substrate is an important issue in the development of the LCP substrate.

舉凡於第205105448 U號中國專利提出的複合式疊構高頻低介電性膠膜、第205255668 U號中國專利提出的低介電性膠膜、第105295753 B號中國專利提出的高頻黏著膠水層疊結構及其製備方法、第206840863 U號中國專利提出的複合式LCP高頻高速雙面銅箔基板、第206932462 U號中國專利提出的複合式LCP高頻高速FRCC(軟性背膠銅箔基板)基材等,皆未能有效改善LCP與銅箔間的接著力。 Examples include the composite laminated high-frequency low-dielectric adhesive film proposed in Chinese Patent No. 205105448 U, the low-dielectric adhesive film proposed in Chinese Patent No. 205255668 U, and the high-frequency adhesive glue proposed in Chinese Patent No. 105295753 B Laminated structure and its preparation method, composite LCP high-frequency high-speed double-sided copper foil substrate proposed by Chinese Patent No. 206840863 U, composite LCP high-frequency high-speed FRCC (soft adhesive copper foil substrate) proposed by Chinese Patent No. 206932462 U Base materials, etc., have failed to effectively improve the adhesion between LCP and copper foil.

為了滿足市場對高頻高速可撓性板材的需求,本發明提供的LCP基板,通過在銅箔層與LCP層間加入低介電膠層並改善其配方和性能,能夠增加LCP層與銅箔層之間的接著強度,故可選用Rz值較低的銅箔層,於高頻高速傳輸時不易造成訊號損失;此外,低介電膠層具有低介電常數及低介電損失,亦有利於高頻高速傳輸。 In order to meet the market demand for high-frequency high-speed flexible sheets, the LCP substrate provided by the present invention can increase the LCP layer and the copper foil layer by adding a low dielectric adhesive layer between the copper foil layer and the LCP layer and improving its formulation and performance Therefore, the copper foil layer with a lower Rz value can be used, which is not easy to cause signal loss during high-frequency high-speed transmission. In addition, the low dielectric adhesive layer has low dielectric constant and low dielectric loss, which is also conducive to High frequency and high speed transmission.

為解決上述技術問題,本發明提供一種高接著強度的LCP基板,係包括:至少一銅箔層,且該銅箔層的厚度為1至35μm;厚度為12至75μm之液晶高分子層;以及至少一低介電膠層,該低介電膠層的厚度為1至7μm,且該低介電膠層位於該銅箔層及該液晶高分子層之間;其中,該低介電膠層之Dk值為2.0至4.0、Df值為0.001至0.010,且該液晶高分子層之Dk值(10GHz)為2.5至4.0、Df值(10GHz)為0.001至0.010;所述低介電膠層包括組分A和組分B中的至少一種,其中,所述組分A係選自由陶瓷粉體、燒結二氧化矽、鐵氟龍、不同於鐵氟龍之氟系樹脂、聚醚醚酮(PEEK)和阻燃劑組成群組中的至少一種,所述組分B係選自由環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、矽橡膠系樹脂、聚對二甲苯系樹脂、雙馬來醯亞胺系樹脂和聚醯亞胺系樹脂組成群組中的至少一種;所述組分A係佔所述低介電膠層的總固含量的0至50重量%,所述組分B係佔所述低介電膠層的總固含量的5至80重量%。 In order to solve the above technical problems, the present invention provides a high-adhesion LCP substrate comprising: at least one copper foil layer with a thickness of 1 to 35 μm; a liquid crystal polymer layer with a thickness of 12 to 75 μm; and At least one low dielectric adhesive layer, the thickness of the low dielectric adhesive layer is 1 to 7 μm, and the low dielectric adhesive layer is located between the copper foil layer and the liquid crystal polymer layer; wherein, the low dielectric adhesive layer The Dk value is 2.0 to 4.0, the Df value is 0.001 to 0.010, and the Dk value (10 GHz) of the liquid crystal polymer layer is 2.5 to 4.0, and the Df value (10 GHz) is 0.001 to 0.010; the low dielectric adhesive layer includes At least one of component A and component B, wherein the component A is selected from the group consisting of ceramic powder, sintered silica, Teflon, fluorine-based resin different from Teflon, polyetheretherketone ( PEEK) and at least one flame retardant group, the component B is selected from epoxy resin, acrylic resin, urethane resin, silicone rubber resin, parylene resin, Bismaleimide-based resin and polyimide-based resin constitute at least one of the group; the component A accounts for 0 to 50% by weight of the total solid content of the low-dielectric adhesive layer, the Component B accounts for 5 to 80% by weight of the total solid content of the low dielectric adhesive layer.

於一具體實施態樣中,所述陶瓷粉體選自由BaTiO3、SrTiO3、Ba(Sr)TiO3、PbTiO3、CaTiO3和Mg2TiO4組成群組中的至少一種。 In a specific embodiment, the ceramic powder is at least one selected from the group consisting of BaTiO 3 , SrTiO 3 , Ba(Sr)TiO 3 , PbTiO 3 , CaTiO 3 and Mg 2 TiO 4 .

於一具體實施態樣中,所述陶瓷粉體係佔所述低介電膠層的總固含量的0至45重量%,所述燒結二氧化矽係佔所述低介電膠層的總固含量的0至45重量%,所述鐵氟龍係佔所述低介電膠層的總固含量的0至45重量%,所述氟系樹脂係佔所述低介電膠層的總固含量的0至45重量%,所述聚醚醚酮(PEEK)係佔所述低介電膠層的總固含量的0至45重量%,所述阻燃劑係佔所述低介電膠層的總固含量的0至45重量%。 In a specific embodiment, the ceramic powder system accounts for 0 to 45% by weight of the total solid content of the low-dielectric adhesive layer, and the sintered silica system accounts for the total solid content of the low-dielectric adhesive layer. 0% to 45% by weight, the Teflon system accounts for 0 to 45% by weight of the total solid content of the low-dielectric adhesive layer, and the fluorine-based resin system accounts for the total solid content of the low-dielectric adhesive layer 0 to 45% by weight, the polyetheretherketone (PEEK) accounts for 0 to 45% by weight of the total solid content of the low-dielectric adhesive layer, and the flame retardant accounts for the low-dielectric adhesive The total solids content of the layer is 0 to 45% by weight.

於一具體實施態樣中,所述氟系樹脂係選自由聚偏氟乙烯、氟乙烯與乙烯基醚共聚物、四氟乙烯與乙烯的共聚物、聚三氟氯乙烯與乙烯共聚物、四氟乙烯、六氟丙烯與偏氟乙烯共聚物、四氟乙烯-全氟烷基乙 烯基醚共聚物、聚三氟氯乙烯、聚氯乙烯、四氟乙烯-六氟丙稀共聚物、乙烯-氟乙烯共聚物及四氟乙烯-六氟丙烯-三氟乙烯共聚物所組成之群組之至少一種。 In a specific embodiment, the fluorine-based resin is selected from the group consisting of polyvinylidene fluoride, a copolymer of vinyl fluoride and vinyl ether, a copolymer of tetrafluoroethylene and ethylene, a copolymer of polychlorotrifluoroethylene and ethylene, four Vinyl fluoride, hexafluoropropylene and vinylidene fluoride copolymer, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polychlorotrifluoroethylene, polyvinyl chloride, tetrafluoroethylene-hexafluoropropylene copolymer, ethylene- At least one of the group consisting of vinyl fluoride copolymer and tetrafluoroethylene-hexafluoropropylene-trifluoroethylene copolymer.

於一具體實施態樣中,與所述低介電膠層黏著的所述銅箔層表面的Rz值為0至1.2μm。 In an embodiment, the Rz value of the surface of the copper foil layer adhered to the low-dielectric adhesive layer is 0 to 1.2 μm.

於一具體實施態樣中,所述LCP基板係LCP單面銅箔基板,所述LCP單面銅箔基板由一個銅箔層、一個低介電膠層和一個LCP層所組成,且從上到下依次為所述銅箔層、所述低介電膠層和所述LCP層;所述LCP單面銅箔基板的厚度為14至117μm。 In a specific embodiment, the LCP substrate is an LCP single-sided copper foil substrate. The LCP single-sided copper foil substrate is composed of a copper foil layer, a low-dielectric adhesive layer, and an LCP layer. From the bottom, the copper foil layer, the low dielectric adhesive layer and the LCP layer are in this order; the thickness of the LCP single-sided copper foil substrate is 14 to 117 μm.

於一具體實施態樣中,所述LCP基板係LCP雙面銅箔基板,所述LCP雙面銅箔基板由二個銅箔層、二個低介電膠層和一個LCP層所組成,且從上到下依次為第一銅箔層、第一低介電膠層、LCP層、第二低介電膠層和第二銅箔層;所述LCP雙面銅箔基板的厚度為16至159μm。 In a specific embodiment, the LCP substrate is an LCP double-sided copper foil substrate. The LCP double-sided copper foil substrate is composed of two copper foil layers, two low dielectric adhesive layers, and one LCP layer, and From top to bottom are the first copper foil layer, the first low dielectric adhesive layer, the LCP layer, the second low dielectric adhesive layer and the second copper foil layer; the thickness of the LCP double-sided copper foil substrate is 16 to 159μm.

本發明還提供一種所述之高接著強度的LCP基板的製備方法,所述LCP單面銅箔基板的製備方法如下:步驟一、將所述低介電膠層的前體塗佈於所述銅箔層的表面上,於60至180℃條件下去除溶劑,以形成所述低介電膠層;步驟二、將所述LCP層的前體塗佈於所述低介電膠層的表面上,於60至180℃條件下去除溶劑,以形成所述LCP層,並於240至260℃條件下8至12小時進行退火處理,即得所述LCP單面銅箔基板。 The invention also provides a method for preparing the high-adhesive strength LCP substrate. The method for preparing the LCP single-sided copper foil substrate is as follows: Step 1. Apply the precursor of the low dielectric adhesive layer to the On the surface of the copper foil layer, the solvent is removed at 60 to 180°C to form the low-dielectric adhesive layer; step two, the precursor of the LCP layer is coated on the surface of the low-dielectric adhesive layer Above, the solvent is removed at 60 to 180°C to form the LCP layer, and an annealing treatment is performed at 240 to 260°C for 8 to 12 hours to obtain the LCP single-sided copper foil substrate.

本發明復提供一種所述之高接著強度的LCP基板的製備方法,所述LCP雙面銅箔基板的製備方法為下列二種方法中的一種:第一種方法包括如下步驟: 步驟一、將第一低介電膠層的前體塗佈於第一銅箔層的表面上,於60至180℃條件下去除溶劑,以形成第一低介電膠層;步驟二、將所述LCP層的前體塗佈於所述第一低介電膠層的表面上,於60至180℃條件下去除溶劑,以形成所述LCP層,並於240至260℃條件下8至12小時進行退火處理;步驟三、將第二低介電膠層的前體塗佈於所述LCP層的表面上,於60至180℃條件下去除溶劑,以形成第二低介電膠層;以及步驟四、於所述第二低介電膠層上壓合第二銅箔層,於160至200℃條件下進行5小時以上的固化,即得所述LCP雙面銅箔基板。 The invention further provides a method for preparing the high-strength LCP substrate. The method for preparing the LCP double-sided copper foil substrate is one of the following two methods. The first method includes the following steps: Step 1. The precursor of the first low-dielectric adhesive layer is coated on the surface of the first copper foil layer, and the solvent is removed under the condition of 60 to 180° C. to form the first low-dielectric adhesive layer; step two, the LCP layer The precursor is coated on the surface of the first low dielectric adhesive layer, the solvent is removed at 60 to 180°C to form the LCP layer, and annealed at 240 to 260°C for 8 to 12 hours Process; Step 3: Apply the precursor of the second low-dielectric adhesive layer on the surface of the LCP layer, and remove the solvent at 60 to 180°C to form a second low-dielectric adhesive layer; and step four 2. Pressing a second copper foil layer on the second low dielectric adhesive layer and curing at 160 to 200°C for more than 5 hours to obtain the LCP double-sided copper foil substrate.

第二種方法包括如下步驟:步驟一、將所述低介電膠層的前體分別塗佈於二所述銅箔層的表面上,於60至180℃條件下去除溶劑,以形成二個具有低介電膠層之半成品A;步驟二、將所述LCP層的前體塗佈於其中一個所述半成品A之低介電膠層的表面上,於60至180℃條件下去除溶劑,並於240至260℃條件下8至12小時進行退火處理,得到具有LCP層之半成品B;步驟三、將所述半成品B的LCP層與另一個所述半成品A的低介電膠層貼合並壓合,於160至200℃條件下進行5小時以上的固化,即得所述LCP雙面銅箔基板。 The second method includes the following steps: Step 1. The precursors of the low-dielectric adhesive layer are respectively coated on the surfaces of the two copper foil layers, and the solvent is removed at 60 to 180° C. to form two Semi-finished product A with a low-dielectric adhesive layer; step two, the precursor of the LCP layer is coated on the surface of one of the low-dielectric adhesive layers of the semi-finished product A, and the solvent is removed at 60 to 180°C; And annealed at 240 to 260°C for 8 to 12 hours to obtain a semi-finished product B with an LCP layer; Step 3: attach and merge the LCP layer of the semi-finished product B with another low-dielectric adhesive layer of the semi-finished product A Pressing and curing at 160 to 200°C for more than 5 hours to obtain the LCP double-sided copper foil substrate.

本發明具有以下的有益效果:本發明提供的LCP基板包括至少一銅箔層、至少一低介電膠層和一LCP層,且銅箔層和LCP層之間通過低介電膠層黏接,通過改善低介電膠層的配方和性能,能夠提高低介電膠層與銅箔層以及與LCP層之間的接著強度,進而間接增加LCP層與銅箔層之間的接著強度,故在接著強 度滿足要求的情況下,可選用Rz值較低的低輪廓銅箔層,由於信號傳輸的集膚效應,電子傳輸傾向在銅箔層的表面進行,採用粗糙度較低的銅箔層,會大大減少訊號損失,即於高頻高速傳輸時不易造成訊號損失。 The present invention has the following beneficial effects: The LCP substrate provided by the present invention includes at least one copper foil layer, at least one low dielectric adhesive layer and an LCP layer, and the copper foil layer and the LCP layer are adhered by a low dielectric adhesive layer , By improving the formulation and performance of the low dielectric adhesive layer, the bonding strength between the low dielectric adhesive layer and the copper foil layer and the LCP layer can be improved, thereby indirectly increasing the bonding strength between the LCP layer and the copper foil layer, so In the case where the strength meets the requirements, a low-profile copper foil layer with a lower Rz value can be selected. Due to the skin effect of signal transmission, electron transmission tends to proceed on the surface of the copper foil layer, and a copper foil layer with a lower roughness is used , It will greatly reduce the signal loss, that is, it is not easy to cause signal loss during high-frequency high-speed transmission.

此外,本發明的低介電膠層具有低介電常數及低介電損失,亦有利於高頻高速傳輸。 In addition, the low dielectric adhesive layer of the present invention has a low dielectric constant and low dielectric loss, which is also beneficial to high-frequency and high-speed transmission.

再者,本發明還具有適合高密度組裝的低反彈力以及極佳的機械性能,激光鑽孔工藝更佳、小孔徑不易有內縮的狀況;本發明優於一般的LCP和PI基板,適用於5G智能型手機、Apple watch等可穿戴設備。 In addition, the present invention also has a low rebound force suitable for high-density assembly and excellent mechanical properties. The laser drilling process is better and the small aperture is not easy to shrink. The present invention is superior to the general LCP and PI substrates and suitable for Used in 5G smart phones, Apple watch and other wearable devices.

另外,傳統的熱固性聚醯亞胺膜的製備法中,具有38μm以上的厚膜不易生產,效率低,本發明的製造方法不僅可以製造適宜厚度的LCP單面及雙面銅箔基板,更可以輕易得到100μm的基板。 In addition, in the traditional preparation method of thermosetting polyimide film, a thick film with a thickness of 38 μm or more is not easy to produce, and the efficiency is low. The manufacturing method of the present invention can not only manufacture LCP single-sided and double-sided copper foil substrates with appropriate thickness, Easy to get 100μm substrate.

再者,從試驗數據能夠看出本發明的LCP基板接著強度佳,且>1.0kgf/cm。 Furthermore, from the test data, it can be seen that the LCP substrate of the present invention has good adhesion strength and is >1.0 kgf/cm.

100‧‧‧銅箔層 100‧‧‧Copper foil layer

200‧‧‧低介電膠層 200‧‧‧Low dielectric adhesive layer

300‧‧‧LCP層 300‧‧‧ LCP layer

第1圖係本發明之高接著強度的LCP基板的結構示意圖。 FIG. 1 is a schematic diagram of the structure of the high bonding strength LCP substrate of the present invention.

第2圖係本發明之高接著強度的LCP基板另一實施態樣的結構示意圖。 FIG. 2 is a schematic structural view of another embodiment of the high-strength LCP substrate of the present invention.

以下的具體實施例用以說明本發明之揭露內容,在閱讀本說明書之揭露內容以後,本技術領域中具有通常知識者能輕易地理解其優點及功效。 The following specific embodiments are used to illustrate the disclosure content of the present invention. After reading the disclosure content of this specification, those with ordinary knowledge in the technical field can easily understand its advantages and effects.

須知,本說明書所附圖式所繪示之結構、比例、尺寸等,僅為配合說明書所揭示之內容,以便本技術領域中具有通常知識者得以理解及閱讀,而非意圖將本發明限制於特定條件之中,故不具有技術上之實質意義。任何結構之修改、比例關係之改變,或尺寸之的調整,在不影響本說明書所能產生之功效及所能達成之目的下,均應包含在本說明書所揭露之範圍內。在無實質變更技術內容的情況下,其相對關係之改變或調整,亦當被視為本發明可實施之範疇內。同時,本說明書中所引用之如「上」、「第一」、「第二」、「一」及「二」等之用語,亦僅為便於敘述之明瞭,而非用以限定本發明可實施之範圍,其相對關係之改變或調整,在無實質變更技術內容下,當亦視為本發明可實施之範疇。 It should be noted that the structure, ratio, size, etc. shown in the drawings of this specification are only in accordance with the contents disclosed in the specification, so that those with ordinary knowledge in the technical field can understand and read, and are not intended to limit the present invention to Under certain conditions, it has no technical significance. Any modification of structure, change of proportional relationship, or adjustment of size shall be included in the scope disclosed in this manual without affecting the functions and objectives that can be achieved in this manual. Without substantial changes to the technical content, changes or adjustments in their relative relationships should also be considered within the scope of the invention. At the same time, the terms such as "upper", "first", "second", "one" and "two" cited in this specification are only for the convenience of description, not for limiting the present invention. The scope of implementation, changes or adjustments in their relative relationship, without substantial changes in the technical content, shall also be regarded as the scope of the invention.

本發明之高接著強度的LCP基板,如第1及2圖所示,包括至少一銅箔層100、至少一低介電膠層200和一LCP層300,所述低介電膠層200位於所述銅箔層100和所述LCP層300之間,且黏接所述銅箔層100和所述LCP層300。 The high-strength LCP substrate of the present invention, as shown in FIGS. 1 and 2, includes at least one copper foil layer 100, at least one low dielectric layer 200 and an LCP layer 300, the low dielectric layer 200 is located The copper foil layer 100 and the LCP layer 300 are bonded between the copper foil layer 100 and the LCP layer 300.

於一具體實施態樣中,每一所述銅箔層的厚度均為1至35μm;每一所述低介電膠層的厚度均為1至7μm;所述LCP層的厚度為12至75μm。較佳的是,每一所述銅箔層的厚度均為9至18μm;每一所述低介電膠層的厚度均為2至3μm。 In a specific embodiment, the thickness of each copper foil layer is 1 to 35 μm; the thickness of each low dielectric layer is 1 to 7 μm; the thickness of the LCP layer is 12 to 75 μm . Preferably, the thickness of each copper foil layer is 9 to 18 μm; the thickness of each low dielectric adhesive layer is 2 to 3 μm.

於一具體實施態樣中,所述陶瓷粉體選自由BaTiO3、SrTiO3、Ba(Sr)TiO3、PbTiO3、CaTiO3和Mg2TiO4組成群組中的至少一種。所述陶瓷粉體可摻雜一種或一種以上的金屬離子,也可不摻雜。 In a specific embodiment, the ceramic powder is at least one selected from the group consisting of BaTiO 3 , SrTiO 3 , Ba(Sr)TiO 3 , PbTiO 3 , CaTiO 3 and Mg 2 TiO 4 . The ceramic powder may be doped with one or more metal ions, or may not be doped.

於一具體實施態樣中,所述銅箔層為壓延銅箔層或電解銅箔層。 In a specific embodiment, the copper foil layer is a rolled copper foil layer or an electrolytic copper foil layer.

於一具體實施態樣中,所述低介電膠層與銅箔層之間的接著強度>1.0kgf/cm。 In a specific embodiment, the bonding strength between the low-dielectric adhesive layer and the copper foil layer is> 1.0 kgf/cm.

第1圖之LCP基板係LCP單面銅箔基板,所述LCP單面銅箔基板由一個銅箔層100、一個低介電膠層200和一個LCP層300所組成,且從上到下依次為所述銅箔層100、所述低介電膠層200和所述LCP層300;所述LCP單面銅箔基板的厚度為14至117μm。 The LCP substrate in FIG. 1 is an LCP single-sided copper foil substrate. The LCP single-sided copper foil substrate is composed of a copper foil layer 100, a low-dielectric adhesive layer 200, and an LCP layer 300, in order from top to bottom. It is the copper foil layer 100, the low dielectric adhesive layer 200 and the LCP layer 300; the thickness of the LCP single-sided copper foil substrate is 14 to 117 μm.

第1圖之LCP單面銅箔基板的製備方法例如下述,但不限於此:步驟一、將所述低介電膠層200的前體塗佈於所述銅箔層100的表面上,於60至180℃條件下去除溶劑,以形成所述低介電膠層200;步驟二、將所述LCP層300的前體塗佈於所述低介電膠層200的表面上,於60至180℃條件下去除溶劑,以形成所述LCP層300,並於240至260℃(較佳係250℃)下8至12小時(較佳係10小時)進行退火處理,即得所述LCP單面銅箔基板。 The preparation method of the LCP single-sided copper foil substrate in FIG. 1 is for example as follows, but not limited to this: Step 1. The precursor of the low dielectric adhesive layer 200 is coated on the surface of the copper foil layer 100, Removing the solvent at 60 to 180°C to form the low-dielectric adhesive layer 200; step two, applying the precursor of the LCP layer 300 on the surface of the low-dielectric adhesive layer 200 at 60 The solvent is removed at 180°C to form the LCP layer 300, and an annealing treatment is performed at 240 to 260°C (preferably 250°C) for 8 to 12 hours (preferably 10 hours) to obtain the LCP Single-sided copper foil substrate.

參閱第2圖,其係本發明之高接著強度的LCP基板之另一實施態樣的結構示意圖。第2圖之LCP基板係LCP雙面銅箔基板,所述LCP雙面銅箔基板由二個銅箔層100、二個低介電膠層200和一個LCP層300所組成,且從上到下依次為所述銅箔層100(作為第一銅箔層)、所述低介電膠層200(作為第一低介電膠層)、所述LCP層300、所述低介電膠層200(作為第二低介電膠層)和所述銅箔層100(作為第二銅箔層);所述LCP雙面銅箔基板的厚度為16至159μm。 Refer to FIG. 2, which is a schematic structural view of another embodiment of the LCP substrate with high bonding strength according to the present invention. The LCP substrate in FIG. 2 is an LCP double-sided copper foil substrate. The LCP double-sided copper foil substrate is composed of two copper foil layers 100, two low dielectric adhesive layers 200, and one LCP layer 300, and from top to The following are the copper foil layer 100 (as the first copper foil layer), the low dielectric layer 200 (as the first low dielectric layer), the LCP layer 300, and the low dielectric layer 200 (as the second low dielectric adhesive layer) and the copper foil layer 100 (as the second copper foil layer); the thickness of the LCP double-sided copper foil substrate is 16 to 159 μm.

第2圖之LCP雙面銅箔基板的製備方法例如下列二種方法中的一種,但不限於此:第一種方法包括如下步驟: 步驟一、將所述低介電膠層200的前體塗佈於所述銅箔層100(作為第一銅箔層)的表面上,於60至180℃條件下去除溶劑,以形成所述低介電膠層200(作為第一低介電膠層);步驟二、將所述LCP層300的前體塗佈於所述第一低介電膠層的表面上,於60至180℃條件下去除溶劑,以形成所述LCP層300,並於240至260℃(較佳係250℃)下8至12小時(較佳係10小時)進行退火處理;步驟三、將所述低介電膠層200的前體塗佈於所述LCP層300的表面上,於60至180℃條件下去除溶劑,以形成所述低介電膠層200(作為第二低介電膠層);步驟四、於所述第二低介電膠層上壓合所述銅箔層100(作為第二銅箔層),於160至200℃條件下進行5小時以上的固化,即得所述LCP雙面銅箔基板。 The preparation method of the LCP double-sided copper foil substrate in FIG. 2 is, for example, one of the following two methods, but it is not limited to this: The first method includes the following steps: Step 1: The precursor of the low dielectric adhesive layer 200 Coated on the surface of the copper foil layer 100 (as the first copper foil layer), the solvent is removed at 60 to 180°C to form the low dielectric paste layer 200 (as the first low dielectric paste layer) ); Step two, the precursor of the LCP layer 300 is coated on the surface of the first low dielectric adhesive layer, the solvent is removed at 60 to 180 ℃ to form the LCP layer 300, and Annealing treatment is performed at 240 to 260°C (preferably 250°C) for 8 to 12 hours (preferably 10 hours); step three, the precursor of the low dielectric adhesive layer 200 is coated on the LCP layer 300 On the surface of the surface, remove the solvent at 60 to 180°C to form the low-dielectric adhesive layer 200 (as a second low-dielectric adhesive layer); Step four, press on the second low-dielectric adhesive layer The copper foil layer 100 (as the second copper foil layer) is combined and cured at 160 to 200° C. for more than 5 hours to obtain the LCP double-sided copper foil substrate.

第二種方法包括如下步驟:步驟一、將所述低介電膠層200的前體分別塗佈於二所述銅箔層100的表面上,於60至180℃條件下去除溶劑,以形成二具有所述低介電膠層200之半成品A;步驟二、將所述LCP層300的前體塗佈於其中一個所述半成品A之低介電膠層200的表面上,於60至180℃條件下去除溶劑,並於240至260℃(較佳係250℃)下8至12小時(較佳係10小時)進行退火處理,得到具有所述LCP層之半成品B;步驟三、將所述半成品B的LCP層300與另一所述半成品A的低介電膠層200貼合並壓合,於160至200℃條件下進行5小時以上的固化,即得所述LCP雙面銅箔基板。 The second method includes the following steps: Step 1. The precursors of the low-dielectric adhesive layer 200 are respectively coated on the surfaces of the two copper foil layers 100, and the solvent is removed at 60 to 180°C to form 2. Semi-finished product A with the low-dielectric adhesive layer 200; Step 2: Apply the precursor of the LCP layer 300 on the surface of one of the low-dielectric adhesive layers 200 of the semi-finished product A, at 60 to 180 Remove the solvent under the condition of ℃, and perform annealing treatment at 240 to 260 ℃ (preferably 250 ℃) for 8 to 12 hours (preferably 10 hours) to obtain the semi-finished product B with the LCP layer; The LCP layer 300 of the semi-finished product B is laminated and pressed with another low-dielectric adhesive layer 200 of the semi-finished product A, and cured at 160 to 200° C. for more than 5 hours to obtain the LCP double-sided copper foil substrate .

本發明透過實施例之示例來說明細節。不過,本發明之詮釋不應當被限制於以下實施例之闡述。 The invention illustrates the details through examples of the embodiments. However, the interpretation of the present invention should not be limited to the following examples.

實施例1至9係選用聚醯亞胺樹脂、陶瓷粉體BaTiO3及SrTiO3、燒結二氧化矽、鐵氟龍以及阻燃劑作為低介電膠層的組分,各實施例之組分比例、介電常數Dk(10GHz)及介電損失因子Df(10GHz)係如下表1所示。 Examples 1 to 9 use polyimide resin, ceramic powders BaTiO 3 and SrTiO 3 , sintered silica, Teflon, and flame retardant as components of the low-dielectric adhesive layer. The components of each example The ratio, dielectric constant Dk (10 GHz) and dielectric loss factor Df (10 GHz) are shown in Table 1 below.

實施例1至4再依本發明提供之方法製備之具有一個銅箔層、一個低介電膠層以及一個LCP層之LCP單面銅箔基板;而實施例5至9則依本發明提供之方法製備之具有二個銅箔層、二個低介電膠層以及一個LCP層之LCP雙面銅箔基板。比較例1係不具有低介電膠層之LCP單面銅箔基板,而比較例2係不具有低介電膠層之LCP雙面銅箔基板。 Examples 1 to 4 are LCP single-sided copper foil substrates having a copper foil layer, a low dielectric adhesive layer and an LCP layer prepared according to the method provided by the present invention; Examples 5 to 9 are provided according to the present invention The method prepares an LCP double-sided copper foil substrate with two copper foil layers, two low dielectric adhesive layers and one LCP layer. Comparative Example 1 is an LCP single-sided copper foil substrate without a low-dielectric adhesive layer, and Comparative Example 2 is an LCP double-sided copper foil substrate without a low-dielectric adhesive layer.

實施例1至9中所使用之LCP層之介電常數Dk(10GHz)為2.95,介電損失因子Df(10GHz)為0.003。 The dielectric constant Dk (10 GHz) of the LCP layer used in Examples 1 to 9 was 2.95, and the dielectric loss factor Df (10 GHz) was 0.003.

將實施例1至9及比較例1至2進行性能測試,測試方法係依《軟板組裝要項測試準則》(TPCA-F-002)實施,並比較各組之介電常數Dk(10GHz)、介電損失因子Df(10GHz)、接著強度、吸水率以及銲錫耐熱性,結果如下表2所示。 The performance tests of Examples 1 to 9 and Comparative Examples 1 to 2 were carried out. The test method was implemented in accordance with the "Test Guidelines for Flexible Board Assembly Requirements" (TPCA-F-002), and the dielectric constant Dk (10 GHz) of each group was compared, The dielectric loss factor Df (10 GHz), adhesion strength, water absorption, and solder heat resistance are shown in Table 2 below.

Figure 108117144-A0101-12-0011-1
Figure 108117144-A0101-12-0011-1

Figure 108117144-A0101-12-0012-2
Figure 108117144-A0101-12-0012-2

由表2可知,本發明的LCP基板具有較高的接著強度,可選用Rz值低的低輪廓銅箔層製作,並具低Dk/Df,有利於高頻高速傳輸。 It can be seen from Table 2 that the LCP substrate of the present invention has a higher bonding strength, can be made of a low-profile copper foil layer with a low Rz value, and has a low Dk/Df, which is beneficial to high-frequency high-speed transmission.

通過在銅箔層與LCP層間加入低介電膠層並改善其配方和性能,能夠增加LCP層與銅箔層之間的接著強度,故可選用Rz值較低的銅箔層,於高頻高速傳輸時不易造成訊號損失;此外低介電膠層具有低介電常數及低介電損失,亦有利於高頻高速傳輸。 By adding a low-dielectric adhesive layer between the copper foil layer and the LCP layer and improving its formulation and performance, it can increase the adhesion strength between the LCP layer and the copper foil layer, so a copper foil layer with a lower Rz value can be used for high frequency High-speed transmission is not easy to cause signal loss. In addition, the low dielectric adhesive layer has low dielectric constant and low dielectric loss, which is also conducive to high-frequency high-speed transmission.

以上所述僅為本發明的實施例,並非因此限製本發明的專利範圍,凡是利用本發明說明書及附圖內容所作的等效結構,或直接或間接運用在其他相關的技術領域,均同理包括在本發明的專利保護範圍內。 The above is only an embodiment of the present invention, and therefore does not limit the patent scope of the present invention. Any equivalent structure made by the description and drawings of the present invention, or directly or indirectly used in other related technical fields, are the same Included in the patent protection scope of the present invention.

100‧‧‧銅箔層 100‧‧‧Copper foil layer

200‧‧‧低介電膠層 200‧‧‧Low dielectric adhesive layer

300‧‧‧LCP層 300‧‧‧ LCP layer

Claims (10)

一種高接著強度的液晶高分子基板,係包括:至少一銅箔層,且該銅箔層的厚度為1至35μm;厚度為12至75μm之液晶高分子層;以及至少一低介電膠層,該低介電膠層的厚度為1至7μm,且該低介電膠層位於該銅箔層及該液晶高分子層之間,其中,該低介電膠層之Dk值(10GHz)為2.0至4.0、Df值(10GHz)為0.001至0.010,且該液晶高分子層之Dk值(10GHz)為2.5至4.0、Df值(10GHz)為0.001至0.010,該低介電膠層包括組分A和組分B,該組分A係包括陶瓷粉體以及選自由燒結二氧化矽、鐵氟龍、不同於鐵氟龍之氟系樹脂、聚醚醚酮(PEEK)和阻燃劑組成群組中的至少一種,該組分B係選自由環氧樹脂、丙烯酸系樹脂、胺基甲酸酯系樹脂、矽橡膠系樹脂、聚對二甲苯系樹脂、雙馬來醯亞胺系樹脂和聚醯亞胺系樹脂組成群組中的至少一種,且該組分A係佔該低介電膠層的總固含量的0至50重量%,該組分B係佔該低介電膠層的總固含量的5至80重量%。 A high adhesive strength liquid crystal polymer substrate, comprising: at least one copper foil layer, and the copper foil layer has a thickness of 1 to 35 μm; a liquid crystal polymer layer with a thickness of 12 to 75 μm; and at least one low dielectric adhesive layer The thickness of the low dielectric adhesive layer is 1 to 7 μm, and the low dielectric adhesive layer is located between the copper foil layer and the liquid crystal polymer layer, wherein the Dk value (10 GHz) of the low dielectric adhesive layer is 2.0 to 4.0, Df value (10 GHz) is 0.001 to 0.010, and the Dk value (10 GHz) of the liquid crystal polymer layer is 2.5 to 4.0, Df value (10 GHz) is 0.001 to 0.010, the low dielectric adhesive layer includes components A and component B, the component A includes ceramic powder and is selected from the group consisting of sintered silica, Teflon, fluorine resins other than Teflon, polyether ether ketone (PEEK) and flame retardant At least one of the group, the component B is selected from the group consisting of epoxy resin, acrylic resin, urethane resin, silicone rubber resin, parylene resin, bismaleimide resin and Polyimide-based resins constitute at least one of the groups, and the component A accounts for 0 to 50% by weight of the total solid content of the low-dielectric adhesive layer, and the component B accounts for the low-dielectric adhesive layer 5 to 80% by weight of the total solid content. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,該陶瓷粉體選自由BaTiO3、SrTiO3、Ba(Sr)TiO3、PbTiO3、CaTiO3和Mg2TiO4組成群組中的至少一種。 The high adhesive strength liquid crystal polymer substrate as described in item 1 of the patent application range, wherein the ceramic powder is selected from the group consisting of BaTiO 3 , SrTiO 3 , Ba(Sr)TiO 3 , PbTiO 3 , CaTiO 3 and Mg 2 TiO 4 At least one of the groups. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,該陶瓷粉體係佔該低介電膠層的總固含量的0至45重量%,該燒結二氧化矽係佔該低介電膠層的總固含量的0至45重量%,該鐵氟龍係 佔該低介電膠層的總固含量的0至45重量%,該氟系樹脂係佔該低介電膠層的總固含量的0至45重量%,該聚醚醚酮(PEEK)係佔該低介電膠層的總固含量的0至45重量%,該阻燃劑係佔該低介電膠層的總固含量的0至45重量%。 The high adhesive strength liquid crystal polymer substrate as described in item 1 of the patent application range, wherein the ceramic powder system accounts for 0 to 45% by weight of the total solid content of the low dielectric adhesive layer, and the sintered silica system accounts for 0 to 45% by weight of the total solid content of the low dielectric adhesive layer, the Teflon series It accounts for 0 to 45% by weight of the total solid content of the low-dielectric adhesive layer, the fluorine-based resin accounts for 0 to 45% by weight of the total solid content of the low-dielectric adhesive layer, and the polyetheretherketone (PEEK) system The flame retardant accounts for 0 to 45% by weight of the total solid content of the low dielectric adhesive layer, and the flame retardant accounts for 0 to 45% by weight of the total solid content of the low dielectric adhesive layer. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,該氟系樹脂係選自由聚偏氟乙烯、氟乙烯與乙烯基醚共聚物、四氟乙烯與乙烯的共聚物、聚三氟氯乙烯與乙烯共聚物、四氟乙烯、六氟丙烯與偏氟乙烯共聚物、四氟乙烯-全氟烷基乙烯基醚共聚物、聚三氟氯乙烯、四氟乙烯-六氟丙稀共聚物、乙烯-氟乙烯共聚物及四氟乙烯-六氟丙烯-三氟乙烯共聚物所組成之群組之至少一種。 The high adhesion strength liquid crystal polymer substrate as described in item 1 of the patent application range, wherein the fluorine-based resin is selected from polyvinylidene fluoride, copolymer of vinyl fluoride and vinyl ether, copolymer of tetrafluoroethylene and ethylene , Copolymers of chlorotrifluoroethylene and ethylene, tetrafluoroethylene, hexafluoropropylene and vinylidene fluoride copolymers, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, polychlorotrifluoroethylene, tetrafluoroethylene-hexa At least one of the group consisting of fluoropropylene copolymer, ethylene-fluoroethylene copolymer and tetrafluoroethylene-hexafluoropropylene-trifluoroethylene copolymer. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,與該低介電膠層黏著的該銅箔層表面的Rz(表面粗糙度)值為0.01至1.2μm。 The liquid crystal polymer substrate with high adhesive strength as described in item 1 of the patent application range, wherein the Rz (surface roughness) value of the surface of the copper foil layer adhered to the low-dielectric adhesive layer is 0.01 to 1.2 μm. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,該液晶高分子基板具有一層銅箔層及一層低介電膠層,且該液晶高分子基板的厚度為14至117μm。 The high adhesive strength liquid crystal polymer substrate as described in item 1 of the patent application range, wherein the liquid crystal polymer substrate has a copper foil layer and a low dielectric adhesive layer, and the thickness of the liquid crystal polymer substrate is 14 to 117μm. 如申請專利範圍第1項所述之高接著強度的液晶高分子基板,其中,該液晶高分子基板具有二層銅箔層及二層低介電膠層,且該液晶高分子基板的厚度為16至159μm。 The high adhesive strength liquid crystal polymer substrate as described in item 1 of the patent application range, wherein the liquid crystal polymer substrate has two copper foil layers and two low dielectric adhesive layers, and the thickness of the liquid crystal polymer substrate is 16 to 159 μm. 一種如申請專利範圍第6項所述之高接著強度的液晶高分子基板的製備方法,係包括: 將該低介電膠層的前體塗佈於該銅箔層的表面上,於60至180℃條件下去除溶劑,以形成該低介電膠層;將該液晶高分子層的前體塗佈於該低介電膠層的表面上,於60至180℃條件下去除溶劑,以形成該液晶高分子層;以及於240至260℃條件下8至12小時進行退火處理,得到液晶高分子單面銅箔基板。 A method for preparing a high adhesive strength liquid crystal polymer substrate as described in item 6 of the patent application scope includes: Coating the precursor of the low-dielectric adhesive layer on the surface of the copper foil layer, removing the solvent at 60 to 180° C. to form the low-dielectric adhesive layer; coating the precursor of the liquid crystal polymer layer Lay on the surface of the low dielectric adhesive layer, remove the solvent at 60 to 180°C to form the liquid crystal polymer layer; and anneal at 240 to 260°C for 8 to 12 hours to obtain the liquid crystal polymer Single-sided copper foil substrate. 一種如申請專利範圍第7項所述之高接著強度的液晶高分子基板的製備方法,係包括:將第一低介電膠層的前體塗佈於第一銅箔層的表面上,於60至180℃條件下去除溶劑,以形成該第一低介電膠層;將該液晶高分子層的前體塗佈於該第一低介電膠層的表面上,於60至180℃條件下去除溶劑,以形成該液晶高分子層,並於240至260℃條件下8至12小時進行退火處理;將第二低介電膠層的前體塗佈於該液晶高分子層的表面上,於60至180℃條件下去除溶劑,以形成該第二低介電膠層;以及於該第二低介電膠層上壓合第二銅箔層,於160至200℃條件下進行5小時以上的固化,得到液晶高分子雙面銅箔基板。 A method for preparing a high adhesive strength liquid crystal polymer substrate as described in item 7 of the patent application scope includes: coating the precursor of the first low dielectric adhesive layer on the surface of the first copper foil layer, Remove the solvent at 60 to 180°C to form the first low-dielectric adhesive layer; apply the precursor of the liquid crystal polymer layer on the surface of the first low-dielectric adhesive layer at 60 to 180°C The solvent is removed to form the liquid crystal polymer layer, and an annealing treatment is performed at 240 to 260°C for 8 to 12 hours; the precursor of the second low dielectric adhesive layer is coated on the surface of the liquid crystal polymer layer , Removing the solvent at 60 to 180°C to form the second low-dielectric adhesive layer; and pressing the second copper foil layer on the second low-dielectric adhesive layer at 160 to 200°C for 5 After curing for more than hours, a liquid crystal polymer double-sided copper foil substrate is obtained. 一種如申請專利範圍第7項所述之高接著強度的液晶高分子基板的製備方法,係包括:將該低介電膠層的前體塗佈於二該銅箔層的表面上,於60至180℃條件下去除溶劑,以形成二個具有該低介電膠層之半成品A; 將該液晶高分子層的前體塗佈於其中一個該半成品A之低介電膠層的表面上,於60至180℃條件下去除溶劑,並於240至260℃條件下8至12小時進行退火處理,以得到具有該液晶高分子層之半成品B;以及將該半成品B的液晶高分子層與另一個該半成品A的低介電膠層貼合並壓合,於160至200℃條件下進行5小時以上的固化,得到液晶高分子雙面銅箔基板。 A method for preparing a high adhesive strength liquid crystal polymer substrate as described in item 7 of the patent application scope includes: coating the precursor of the low-dielectric adhesive layer on the surface of two copper foil layers at 60 Remove the solvent under the condition of 180℃ to form two semi-finished products A with the low dielectric adhesive layer; The precursor of the liquid crystal polymer layer is coated on the surface of one of the low-dielectric adhesive layers of the semi-finished product A, the solvent is removed under the condition of 60 to 180°C, and it is carried out under the condition of 240 to 260°C for 8 to 12 hours Annealing to obtain the semi-finished product B with the liquid crystal polymer layer; and bonding and pressing the liquid crystal polymer layer of the semi-finished product B with another low-dielectric adhesive layer of the semi-finished product A at 160 to 200°C After curing for more than 5 hours, a liquid crystal polymer double-sided copper foil substrate is obtained.
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