TWI693655B - Apparatus and method for processing substrates - Google Patents
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本發明係有關於半導體裝置製程,更特別係有關使用處理液處理基板的技術。The present invention relates to a semiconductor device manufacturing process, and more particularly relates to a technology for processing a substrate using a processing liquid.
半導體裝置之製程可能會使用處理液來處理基板。例如,濕式蝕刻作業可能會使用酸液來作為蝕刻劑,藉以在基板上創造出特定圖樣。處理液一般係儲放在供液裝置之儲槽中,並依需 被輸送到基板上。 為了維持製程的穩定與正確性,供液裝置之儲槽每隔一段時間必須以人工方式進行更換,且處理設施每隔一段時間也必須以人工方式進行清洗。然而,這樣的人工作業不但相當耗時,有時甚至會因為人為因素而發生錯誤。The process of the semiconductor device may use a processing liquid to process the substrate. For example, wet etching operations may use acid as an etchant to create specific patterns on the substrate. The treatment liquid is generally stored in the storage tank of the liquid supply device, and is transferred to the substrate as needed. In order to maintain the stability and accuracy of the process, the storage tank of the liquid supply device must be replaced manually at intervals, and the treatment facility must also be manually cleaned at intervals. However, such manual operations are not only quite time-consuming, but sometimes even cause errors due to human factors.
因此,本發明的目的,即在提供可避免習知技術之至少一種上述缺點的基板處理設備及方法。Therefore, an object of the present invention is to provide a substrate processing apparatus and method that can avoid at least one of the above-mentioned disadvantages of the conventional technology.
於是,本發明在一些實施態樣中,該基板處理設備包含一處理裝置,此處理裝置具有一腔室,並被組配為可在該腔室中容置基板。該基板處理設備尚包含一供應裝置,此供應裝置具有一切換元件及用於儲放處理液的複數個儲槽,且被組配為可提供處理液至該處理裝置內以供用於處理基板,其中,該切換元件可受操作來容許該等儲槽中之一者提供處理液給該處理裝置。該基板處理設備亦包含一清潔裝置,此清潔裝置被組配為可提供清洗液至該處理裝置內以供用於清潔該處理裝置。該基板處理設備另包含一控制裝置,此控制裝置被組配為可在與處理液之耗用有關的一第一參數達到一第一條件時,指示該切換元件從第一組態切換成第二組態,其中,該第一組態容許由該等多個儲槽中之一第一儲槽提供處理液給該處理裝置,且該第二組態容許由該等多個儲槽中之一第二儲槽提供處理液給該處理裝置。該控制裝置亦被組配為可在與該切換元件之作業有關的一第二參數達到一第二條件時,指示該清潔裝置將清洗液提供至該處理裝置內。Therefore, in some embodiments of the present invention, the substrate processing apparatus includes a processing device that has a chamber and is configured to accommodate the substrate in the chamber. The substrate processing apparatus still includes a supply device having a switching element and a plurality of storage tanks for storing processing liquid, and is configured to provide the processing liquid into the processing device for processing the substrate, Wherein, the switching element can be operated to allow one of the storage tanks to provide the processing liquid to the processing device. The substrate processing apparatus also includes a cleaning device configured to provide a cleaning liquid into the processing device for cleaning the processing device. The substrate processing apparatus further includes a control device configured to instruct the switching element to switch from the first configuration to the first when a first parameter related to the consumption of the processing liquid reaches a first condition Two configurations, wherein the first configuration allows one of the plurality of storage tanks to provide processing liquid to the processing device, and the second configuration allows the plurality of storage tanks to A second storage tank provides treatment liquid to the treatment device. The control device is also configured to instruct the cleaning device to provide cleaning fluid into the processing device when a second parameter related to the operation of the switching element reaches a second condition.
在一些實施態樣中,該第一參數為下列其中一者:自從該切換元件上次被切換成該第一組態之後在該處理裝置中受到處理的基板數量、自從該切換元件上次被切換成該第一組態之後所經歷的時間、自從該切換元件上次被切換成該第一組態之後被從該第一儲槽提供給該處理裝置的處理液總量、自從該切換元件上次被切換成該第一組態之後該第一儲槽每次提供該處理液給該處理裝置的時間之總和、及前述項目之任意組合;並且該第一條件為至少一個預定閾值。In some embodiments, the first parameter is one of the following: the number of substrates processed in the processing device since the switching element was last switched to the first configuration, since the switching element was last The time elapsed after switching to the first configuration, the total amount of processing liquid supplied from the first storage tank to the processing device since the switching element was last switched to the first configuration, since the switching element The total amount of time each time that the first storage tank provides the processing liquid to the processing device and any combination of the foregoing items after being switched to the first configuration last time; and the first condition is at least one predetermined threshold.
在一些實施態樣中,該第一參數為時間,且該第一條件為一預定時點。In some embodiments, the first parameter is time, and the first condition is a predetermined time point.
在一些實施態樣中,該第二參數為該切換元件所進行過的切換次數,且該第二條件為一預定閾值。In some implementations, the second parameter is the number of switchings performed by the switching element, and the second condition is a predetermined threshold.
在一些實施態樣中,該清潔裝置進一步被組配為可提供該清洗液至該等複數個儲槽內以供用於清潔該等儲槽,並且該控制裝置進一步被組配為可在該切換元件從容許由該第一儲槽提供該處理液給該處理裝置的該第一組態切換成容許由該第二儲槽提供該處理液給該處理裝置的該第二組態之後,指示該清潔裝置以與該清潔裝置將該清洗液提供至該處理裝置內的作業並行的方式將該清洗液提供至該第一儲槽內。In some embodiments, the cleaning device is further configured to provide the cleaning liquid into the plurality of storage tanks for cleaning the storage tanks, and the control device is further configured to switch between the After the element switches from the first configuration allowing the first storage tank to supply the processing liquid to the processing device to the second configuration allowing the second storage tank to provide the processing liquid to the processing device, the component is instructed The cleaning device supplies the cleaning liquid into the first storage tank in parallel with the operation of the cleaning device supplying the cleaning liquid into the processing device.
在一些實施態樣中,該控制裝置進一步被組配為可在該切換元件被切換成該第二組態之後進行下列作業:根據與一測試作業有關的一第三參數而決定是否要進行該測試作業;在決定要進行該測試作業之後,指示該處理裝置與該供應裝置進行該測試作業,並在該測試作業完成之後對至少一個基板進行排程以使該至少一個基板在該處理裝置之該腔室中受到處理,其中,該測試作業會使一測試基板在該處理裝置之該腔室中受到處理;以及在決定不進行該測試作業之後,指示該處理裝置對該至少一個基板進行排程以使該至少一個基板在該處理裝置之該腔室中受到處理。In some implementation aspects, the control device is further configured to perform the following operations after the switching element is switched to the second configuration: according to a third parameter related to a test operation, determine whether to perform the operation Test operation; after deciding to perform the test operation, instruct the processing device and the supply device to perform the test operation, and schedule at least one substrate after the test operation is completed so that the at least one substrate is in the processing device Being processed in the chamber, wherein the test operation causes a test substrate to be processed in the chamber of the processing device; and after deciding not to perform the test operation, instructing the processing device to discharge the at least one substrate To process the at least one substrate in the chamber of the processing device.
於是,本發明在一些實施態樣中,該基板處理方法包含下列步驟:對至少一個基板進行排程以使該至少一個基板在一處理裝置之腔室中受到處理;在與處理液之耗用有關的一第一參數達到一第一條件時,指示能夠將處理液提供至該處理裝置內以供用於處理該至少一個基板的一供應裝置之一切換元件從第一組態切換成第二組態,其中,該第一組態容許處理液被從該供應裝置之一第一儲槽提供給該處理裝置,且該第二組態容許處理液被從該供應裝置之一第二儲槽提供給該處理裝置;以及在與該切換元件之作業有關的一第二參數達到一第二條件時,指示一清潔裝置將清洗液提供至該處理裝置內以供用於清潔該處理裝置。Therefore, in some embodiments of the present invention, the substrate processing method includes the following steps: scheduling at least one substrate so that the at least one substrate is processed in a chamber of a processing apparatus; consumption of processing liquid When a related first parameter reaches a first condition, it indicates that the processing liquid can be supplied into the processing device for a switching element of a supply device for processing the at least one substrate to switch from the first configuration to the second group Wherein the first configuration allows the processing liquid to be supplied from the first storage tank of the supply device to the processing device, and the second configuration allows the processing liquid to be supplied from the second storage tank of the supply device To the processing device; and when a second parameter related to the operation of the switching element reaches a second condition, instruct a cleaning device to provide cleaning fluid into the processing device for cleaning the processing device.
在一些實施態樣中,該第一參數為下列其中一者:自從該切換元件上次被切換成該第一組態之後在該處理裝置中受到處理的基板數量、自從該切換元件上次被切換成該第一組態之後所經歷的時間、自從該切換元件上次被切換成該第一組態之後被從該第一儲槽提供給該處理裝置的處理液總量、自從該切換元件上次被切換成該第一組態之後該第一儲槽每次提供該處理液給該處理裝置的時間之總和、及前述項目之任意組合;並且該第一條件為至少一個預定閾值。In some embodiments, the first parameter is one of the following: the number of substrates processed in the processing device since the switching element was last switched to the first configuration, since the switching element was last The time elapsed after switching to the first configuration, the total amount of processing liquid supplied from the first storage tank to the processing device since the switching element was last switched to the first configuration, since the switching element The total amount of time each time that the first storage tank provides the processing liquid to the processing device and any combination of the foregoing items after being switched to the first configuration last time; and the first condition is at least one predetermined threshold.
在一些實施態樣中,該第一參數為時間,且該第一條件為一預定時點。In some embodiments, the first parameter is time, and the first condition is a predetermined time point.
在一些實施態樣中,該第二參數為該切換元件所進行過的切換次數,且該第二條件為一預定閾值。In some implementations, the second parameter is the number of switchings performed by the switching element, and the second condition is a predetermined threshold.
在一些實施態樣中,該基板處理方法進一步包含:在該切換元件從容許該處理液被從該供應裝置之該第一儲槽提供給該處理裝置的該第一組態切換成容許該處理液被從該供應裝置之該第二儲槽提供給該處理裝置的該第二組態之後,指示該清潔裝置以與該清潔裝置將該清洗液提供至該處理裝置內的作業並行的方式將該清洗液提供至該第一儲槽內以供用於清潔該第一儲槽。In some embodiments, the substrate processing method further includes: switching from the first configuration that allows the processing liquid to be supplied to the processing device from the first storage tank of the supply device to the switching element to allow the processing After the liquid is supplied from the second storage tank of the supply device to the second configuration of the processing device, the cleaning device is instructed to operate in parallel with the operation of the cleaning device supplying the cleaning liquid into the processing device The cleaning liquid is provided into the first storage tank for cleaning the first storage tank.
在一些實施態樣中,該基板處理方法進一步包含:在該切換元件從容許該處理液被從該供應裝置之該第一儲槽提供給該處理裝置的該第一組態切換成容許該處理液被從該供應裝置之該第二儲槽提供給該處理裝置的該第二組態之後,指示該清潔裝置以與由該第二儲槽提供該處理液至該處理裝置之該腔室內以供用於處理該至少一個基板中之至少一個基板的作業並行的方式將該清洗液提供至該第一儲槽內以供用於清潔該第一儲槽。In some embodiments, the substrate processing method further includes: switching from the first configuration that allows the processing liquid to be supplied to the processing device from the first storage tank of the supply device to the switching element to allow the processing After the liquid is supplied from the second storage tank of the supply device to the second configuration of the processing device, the cleaning device is instructed to supply the processing liquid from the second storage tank into the chamber of the processing device to The cleaning liquid is supplied into the first storage tank in a parallel manner for the operation for processing at least one substrate of the at least one substrate for cleaning the first storage tank.
在一些實施態樣中,該基板處理方法進一步包含:在該切換元件被切換成該第二組態之後,根據與一測試作業有關的一第三參數而決定是否要進行該測試作業;在已決定要進行該測試作業時,指示該處理裝置與該供應裝置進行該測試作業,並在該測試作業完成之後對另外至少一個基板進行排程以使該另外至少一個基板在該處理裝置之該腔室中受到處理,其中,該測試作業會使一測試基板在該處理裝置之該腔室中受到處理;以及在已決定不進行該測試作業時,對另外至少一個基板進行排程以使該另外至少一個基板在該處理裝置之該腔室中受到處理。In some embodiments, the substrate processing method further includes: after the switching element is switched to the second configuration, deciding whether to perform the test operation according to a third parameter related to a test operation; When deciding to perform the test operation, instruct the processing device and the supply device to perform the test operation, and schedule at least one other substrate after the test operation is completed so that the at least one other substrate is in the cavity of the processing device Processed in the chamber, wherein the test operation causes a test substrate to be processed in the chamber of the processing device; and when it has been decided not to perform the test operation, schedule at least one other substrate to make the additional At least one substrate is processed in the chamber of the processing device.
在一些實施態樣中,該基板處理方法進一步包含:在已決定要進行該測試作業時,指示該清潔裝置在該切換元件從容許該處理液被從該供應裝置之該第一儲槽提供給該處理裝置的該第一組態切換成容許該處理液被從該供應裝置之該第二儲槽提供給該處理裝置的該第二組態之後,以與該測試作業並行的方式將該清洗液提供至該第一儲槽內以供用於清潔該第一儲槽。In some embodiments, the substrate processing method further includes: instructing the cleaning device to allow the processing liquid to be supplied from the first storage tank of the supply device when the switching element has been decided to perform the test operation After the first configuration of the processing device is switched to the second configuration that allows the processing liquid to be supplied from the second storage tank of the supply device to the processing device, the cleaning is performed in parallel with the test operation The liquid is provided into the first storage tank for cleaning the first storage tank.
本發明之功效在於:可以節省相關人力資源,並可避免由於人為因素所造成的失誤。此外,這樣的自動化程序比起傳統的人工程序在時間的運用上也較有效率。The effect of the invention is that it can save relevant human resources and avoid mistakes caused by human factors. In addition, such automated procedures are more efficient in terms of time than traditional manual procedures.
請參看圖1,其依據本發明之一實施例而例示出可藉以進行基板濕製程(包含蝕刻、清洗、乾燥作業等等)的一個基板處理設備100。所例示之此設備100包含一個處理裝置110、一個供應裝置120、一個清潔裝置130以及電氣式連接至該處理裝置110、該供應裝置120和該清潔裝置130的一個控制裝置140。Please refer to FIG. 1, which illustrates a
根據一個實施例,該處理裝置110具有一個腔室,且被組配為可在該腔室中容置即將進行處理的至少一個基板150。依據一些實施例,處理裝置110對基板150所進行的處理可係與單基板濕製程、多基板濕製程、單一方晶片錫球下金屬蝕刻 、薄化晶圓支撐或剝離、貼合或剝離製程、碳化矽再生晶圓、再生矽晶圓或其他同類技術有關。為求簡明,圖1中只有例示出一個基板150。在一個實施例中,在該腔室中每次只會容置並處理一個基板150,但本發明並不如此受限。根據本發明之一些實施例,基板150可為載板、晶圓、晶片或其他元件形式,並且可能具有圓形、方形、矩形或其他幾何形狀。According to one embodiment, the
根據一個實施例,供應裝置120具有複數個處理液儲槽122(例如於圖中所示出的包含第一儲槽122-1與第二儲槽122-2的兩個處理液儲槽,但本發明並不如此受限)和一個切換元件121,該等處理液儲槽122係用於儲放處理液,該切換元件121可受操作來使該等處理液儲槽122中之一者能夠與處理裝置110連通並提供處理液至處理裝置110之腔室內。切換元件121包含連接至處理裝置110的第一管線,以使供應裝置120能夠經由該第一管線而將儲放在處理液儲槽122中的處理液提供至處理裝置110內。該切換元件121被組配成同一時間僅容許該等處理液儲槽122中之唯一一者能夠提供處理液給處理裝置110。該處理液會被施加至處理裝置110之腔室中的基板150上,以在基板150上進行某種特定處理程序(例如蝕刻)。在一個實施例中,切換元件121進一步包含複數個控制閥以及連接至該等處理液儲槽122的第二管線,以使切換元件121可在該等處理液儲槽122之間切換,而選擇要以哪一個處理液儲槽122作為處理液來源。在一個實施例中,供應裝置120更進一步包含儲存有補充液(即,未使用過的處理液)且經由第三管線連接至該等處理液儲槽122的一個補充裝置(未示於圖中),以供用於對該等處理液儲槽122進行補充。在又一個實施例中,供應裝置120進一步包含連接至該等處理液儲槽122的控溫器以及循環管路,用以控制儲存在該等處理液儲槽122中的處理液之溫度。According to one embodiment, the
根據一個實施例,清潔裝置130具有用於儲放清洗液的一個洗劑儲槽131,並且經由第四管線而與處理裝置110連接,藉以使得清潔裝置130能夠經由該第四管線將清洗液供應至處理裝置110內以供用於清潔處理裝置110。清潔裝置130可另經由第五管線而與處理液儲槽122連接,以使清潔裝置130能夠經由該第五管線將清洗液供應至處理液儲槽122內以供用於清潔處理液儲槽122。According to one embodiment, the
根據一個實施例,該控制裝置140具有彼此電氣式連接的一個輸入模組141和一個處理器142。處理器142被組配成可透過輸入模組141接收來自設備100之使用者的控制資訊,並可根據所接收到的控制資訊而自動地控制處理裝置110、供應裝置120與清潔裝置130之作業。該控制資訊可包含但不受限於下列中之至少一者:基板數量、時間長度、時間、已用處理液量、切換次數、測試次數。處理器142更進一步係被組配成可根據所接收到的控制資訊而自動控制何時係由何處理液儲槽122提供處理液。According to an embodiment, the
圖2是依據本發明之一實施例而例示出一種基板處理方法的流程圖,此方法可藉由例示於圖1中的設備100來實施。以下將針對圖1之設備100而說明該方法。FIG. 2 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention. This method can be implemented by the
請參看圖2,在接下來的敘述中,係假設在即將開始進行此程序時,供應裝置120之切換元件121係組配成容許由第一儲槽122-1提供處理液給處理裝置110的第一組態(即,負責提供處理液給處理裝置110的是第一儲槽122-1)。Please refer to FIG. 2. In the following description, it is assumed that the
於步驟205,設備100之控制裝置140對一批多個基板的其中至少一部分基板進行排程以使該至少一部分基板在處理裝置110之腔室中受到處理。根據一些實施例,該至少一部分基板可以是該批基板的其中一個基板、其中數個基板或者所有基板,並且當該至少一部分基板包含複數個基板時,該等基板可以是逐一受處理或者成群受處理。In
於步驟210,控制裝置140判定是否要進行更換儲槽作業。若答案為是,則前進到步驟215;若答案為否,則可回到步驟205對同一批基板的另一部分基板或者另一批基板的其中至少一部分基板進行排程。根據一個實施例,步驟210可係藉由針對在步驟205中受到排程的最末片基板而判定與處理液之耗用有關的一第一參數是否達到一第一條件,來判定是否要進行更換儲槽作業。該第一參數可例如係自從切換元件121上次被組配或切換成容許由第一儲槽122-1提供處理液的第一組態之後在處理裝置110中受到處理的基板數量、自從切換元件121上次被組配或切換成該第一組態之後所經歷的時間、自從切換元件121上次被組配或切換成該第一組態之後被從第一儲槽122-1提供給處理裝置110的處理液總量、自從切換元件121上次被組配或切換成該第一組態之後第一儲槽122-1每次提供處理液給處理裝置110的時間之總和、或前述項目之任意組合;且該第一條件可係至少一個預訂閾值,其數值可例如係根據由使用者所輸入的控制資訊所訂定的。根據另一個實施例,該第一參數也可以是時間,且該第一條件可係一個預定時點。In
於步驟215,控制裝置140指示供應裝置120進行更換儲槽作業,並對此進行排程,以將被容許提供處理液給處理裝置110的處理液儲槽(即,負責提供處理液給處理裝置110的處理液儲槽)從第一儲槽122-1更換成其他儲槽,例如更換成第二儲槽122-2。於此事例中,此步驟包含指示切換元件121從容許由第一儲槽122-1提供處理液的第一組態切換成容許由第二儲槽122-2提供處理液的第二組態。根據一個實施例,更換處理液儲槽122的這個作業可以是例如藉由改變針對各個處理液儲槽122所設置的控制閥之組態來完成。在一個實施例中,只要在步驟205中受到排程的所有基板皆已處理完畢,之後便可著手進行更換儲槽作業。然而,在另一個實施例中,更換儲槽作業只會在一整批基板皆已處理完畢之後進行,因此,於此實施例中,若於步驟205中受到排程的該批基板還有尚未受到處理者,則於步驟215,控制裝置140會在排程更換儲槽作業之前先對該批基板中之所有尚未受到處理的基板進行排程,以使該(等)尚未處理基板在進行更換儲槽作業之前都先在處理裝置110中受到處理。In
在此敘明,受到使用和更換的處理液儲槽122並不限於前文所述者。例如,在進行前述程序時,第一儲槽122-1和第二儲槽122-2的身分可互換;換言之,在進行前述程序時,在進行更換儲槽作業之前有可能原本是由第二儲槽122-2負責提供處理液給處理裝置110,且所進行的更換儲槽作業可能是將負責供應處理液的儲槽從第二儲槽122-2更換成第一儲槽122-1。It is stated here that the processing
於步驟220,控制裝置140判定是否要進行清洗腔室作業。若答案為是,則前進到步驟225;若答案為否,則前進到步驟230。根據一些實施例,可係藉由判定與切換元件121之作業有關的一第二參數是否達到一第二條件,來判定是否要進行清洗腔室作業。該第二參數可例如係切換元件121所進行過的切換次數,且該第二條件可係一個預定閾值,其數值可例如係根據由使用者所輸入的控制資訊所訂定的。In
於步驟225,控制裝置140指示清潔裝置130和處理裝置110進行清洗腔室作業,並對此進行排程。此步驟包含指示清潔裝置130將清洗液提供至處理裝置110內以供用於清潔處理裝置110。In
於步驟230,控制裝置140判定是否要進行測試作業。若答案為是,則前進到步驟235;若答案為否,則可回到步驟205對同一批基板的另一部分基板或者另一批基板的其中至少一部分基板進行排程。進行測試作業的目的是要確保處理裝置110在更換了供應處理液的處理液儲槽122以後仍能對基板進行正確處理。根據一些實施例,可係根據與測試作業有關的一第三參數來判定是否要進行測試作業。例如,該第三參數可以是一個旗標,且可係藉由判定該第三參數是否為一特定值來判定是否要進行測試作業。在一個進一步實施例中,控制裝置140可設定並可更改該第三參數之值。例如,控制裝置140可預先將第三參數之值設定為指出要進行測試作業的值或指出不進行測試作業的值,並可根據例如由使用者所輸入的控制資訊而更改該第三參數之數值。在一個實施例中,該第三參數之預設值為指出要進行測試作業的第一值,並且在切換元件121進行了特定數量次(例如五次)切換之後,控制裝置140會將第三參數之值改設為指出不進行測試作業的第二值;在更進一步的實施例中,控制裝置140可在切換元件121又進行了特定數量次(例如五次)切換之後或者在到達某個預定時間之時將第三參數之值改設回第一值。In
於步驟235,控制裝置140指示處理裝置110和供應裝置120進行測試作業,並對此進行排程。在一個實施例中,在測試作業中會有專供測試用的至少一片測試基板在處理裝置110之腔室內藉由來自供應裝置120的處理液而受到處理。例如,於此事例中,由於此時切換元件121已切換成容許由第二儲槽122-2提供處理液的第二組態,故在測試作業中會有至少一片測試基板在處理裝置110之腔室內藉由來自第二儲槽122-2的處理液而受到處理。完成測試作業以後,可再回到步驟205對同一批基板的另一部分基板或者另一批基板的其中至少一部分基板進行排程。In
值得注意的是,在圖2所例示的這個方法中,更換儲槽作業、清洗腔室作業與測試作業都是由機器自動排程與執行的,如此一來,實施本方法可以節省相關人力資源,並可避免由於人為因素所造成的失誤。此外,這樣的自動化程序比起傳統的人工程序在時間的運用上也較有效率。It is worth noting that in the method illustrated in Figure 2, the operation of replacing the tank, cleaning the chamber, and testing are all automatically scheduled and executed by the machine. In this way, the implementation of this method can save relevant human resources And can avoid mistakes caused by human factors. In addition, such automated procedures are more efficient in terms of time than traditional manual procedures.
熟習本發明所屬技術領域中之通常知識者可以識出,步驟215至230並不一定要依照圖2所示出的順序來執行。例如,步驟220可在步驟210與步驟225之間的任何時點進行,而不一定要夾在步驟215與步驟225之間,並且步驟230可在步驟210與步驟235之間的任何時點進行,而不一定要夾在步驟225與步驟235之間。Those skilled in the art of the present invention can recognize that
此外,該方法亦可有更多變化。例如,在一個實施例中,控制裝置140可進一步在於步驟210判定出要進行更換儲槽作業之後,進行判定是否要進行清洗儲槽作業的一個步驟(此判定可例如係根據身為一個旗標的一第四參數是否為一特定值所作出)。於此實施例中,若判定結果為要進行清洗儲槽作業,那麼控制裝置140便會指示清潔裝置130和第一儲槽122-1在完成步驟215之將被容許提供處理液給處理裝置110的處理液儲槽從第一儲槽122-1更換成第二儲槽122-2的更換儲槽作業之後進行針對第一儲槽122-1的清洗儲槽作業,並對此進行排程。在本發明的一些實施例中,控制裝置140係將此清洗儲槽作業排程為與其他作業並行(例如同時進行),以有效利用時間。例如 ,控制裝置140可將由清潔裝置130和第一儲槽122-1所進行的清洗儲槽作業排程為與由清潔裝置130和處理裝置110所進行的清洗腔室作業、由供應裝置120和處理裝置110所進行的測試作業、或者由處理裝置110藉由來自第二儲槽122-2之處理液對一或多個基板150所作的處理作業並行,以節省時間。根據一個實施例,在該清洗儲槽作業中,第一儲槽122-1會排空其內部的處理液,且清潔裝置130會接著將清洗液灌注至第一儲槽122-1內以供用於清洗第一儲槽122-1。在一個更進一步的實施例中,控制裝置140會在該清洗儲槽作業完成之後指示供應裝置120之補充裝置將補充液(即處理液)填充至經清洗過的第一儲槽122-1內,並透過供應裝置120之循環管路和控溫器而將被補充到第一儲槽122-1內的處理液之溫度維持在特定溫度範圍內。In addition, this method can also have more changes. For example, in one embodiment, the
雖然前文已為提供對於本發明實施例之通盤了解而詳述許多細節,然而,熟習本發明所屬技術領域中之通常知識者應可明顯看出,於實施本發明之其他一或多個實施例時並不一定要包含述於前文中的所有細節。此外,應可識出,於本說明書中對一實施例、一個實施例或者第幾實施例及其他諸如此類者之指涉係旨在指出以該方式實施本發明時可能具有的特定特徵、結構或特性。另,於本文中,有時係將許多特徵集合在單一個實施例、圖式或對該實施例或圖式之說明內容當中,這麼做只是為了使說明流暢並更有助於瞭解本發明之各種面向。應可識出,當實作本發明時,只要適宜,來自一個實施例的一或多個特徵或具體細節係有可能與來自另一個實施例的一或多個特徵或具體細節一起被實施。Although the foregoing has detailed many details in order to provide a comprehensive understanding of the embodiments of the present invention, it should be obvious to those skilled in the art of the technical field to which the present invention belongs, in implementing one or more other embodiments of the present invention Time does not necessarily include all the details described in the previous article. In addition, it should be recognizable that references in this specification to an embodiment, an embodiment or several embodiments, and the like are intended to indicate specific features, structures or characteristic. In addition, in this article, sometimes many features are collected in a single embodiment, drawing, or description of the embodiment or drawing. This is just to make the description smooth and help to understand the present invention. Various aspects. It should be recognized that when implementing the present invention, as appropriate, one or more features or specific details from one embodiment may be implemented together with one or more features or specific details from another embodiment.
雖然前文係藉由示範實施例來說明本發明,但,應瞭解,本發明並不僅限於前文所述之該等實施例,本發明應涵蓋所有落於本發明之精神與最廣義解釋之範疇中的所有設計,包含落於本發明之精神與最廣義解釋之範疇中的所有變化及等效設計。Although the foregoing describes the present invention through exemplary embodiments, it should be understood that the present invention is not limited to the foregoing embodiments described above, and the present invention should cover all within the scope of the spirit and the broadest interpretation of the present invention All designs include all changes and equivalent designs that fall within the scope of the spirit of the invention and the broadest interpretation.
100:設備
110:處理裝置
120:供應裝置
121:切換元件
122(122-1、122-2):處理液儲槽(儲槽)
130:清潔裝置
131:洗劑儲槽
140:控制裝置
141:輸入模組
142:處理器
150:基板
205~235:步驟100: device
110: processing device
120: Supply device
121: Switching element
122 (122-1, 122-2): processing liquid storage tank (storage tank)
130: Cleaning device
131: lotion storage tank
140: control device
141: Input module
142: processor
150:
本發明的其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中: 圖1是依據本發明之一實施例而例示出一種基板處理設備的示意圖;及 圖2是依據本發明之一實施例而例示出一種基板處理方法的流程圖。Other features and functions of the present invention will be clearly presented in the embodiments with reference to the drawings, in which: FIG. 1 is a schematic diagram illustrating a substrate processing apparatus according to an embodiment of the present invention; and FIG. 2 is based on the present invention. An embodiment of the invention illustrates a flowchart of a substrate processing method.
100:設備 100: device
110:處理裝置 110: processing device
120:供應裝置 120: Supply device
121:切換元件 121: Switching element
122(122-1、122-2):處理液儲槽(儲槽) 122 (122-1, 122-2): processing liquid storage tank (storage tank)
130:清潔裝置 130: Cleaning device
131:洗劑儲槽 131: lotion storage tank
140:控制裝置 140: control device
141:輸入模組 141: Input module
142:處理器 142: processor
150:基板 150: substrate
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