TWI691978B - Anisotropic conductive film and sheet for liquid crystal display - Google Patents

Anisotropic conductive film and sheet for liquid crystal display Download PDF

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TWI691978B
TWI691978B TW105120498A TW105120498A TWI691978B TW I691978 B TWI691978 B TW I691978B TW 105120498 A TW105120498 A TW 105120498A TW 105120498 A TW105120498 A TW 105120498A TW I691978 B TWI691978 B TW I691978B
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anisotropic conductive
conductive film
film
item
thickness direction
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TW201709221A (en
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山本元
待永広宣
古山了
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日商日東電工股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01RELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R11/00Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts
    • H01R11/01Individual connecting elements providing two or more spaced connecting locations for conductive members which are, or may be, thereby interconnected, e.g. end pieces for wires or cables supported by the wire or cable and having means for facilitating electrical connection to some other wire, terminal, or conductive member, blocks of binding posts characterised by the form or arrangement of the conductive interconnection between the connecting locations

Abstract

異向導電性膜(10)具備樹脂膜(20)。樹脂膜(20)具有多個貫通孔(25)。多個貫通孔(25)各別由經導電材料(33)覆蓋之內壁面(24)規定。導電材料(33)係構成於內部具有自表面(11)延伸至背面(12)之空孔(15)之筒狀體(30)。因具有空孔(15),故而異向導電性膜(10)適於確保厚度方向之透光性。 The anisotropic conductive film (10) includes a resin film (20). The resin film (20) has a plurality of through holes (25). The plurality of through holes (25) are respectively defined by the inner wall surface (24) covered with the conductive material (33). The conductive material (33) is a cylindrical body (30) having a hollow (15) extending from the front surface (11) to the back surface (12). Because of having holes (15), the anisotropic conductive film (10) is suitable for ensuring the light transmittance in the thickness direction.

Description

異向導電性膜及液晶顯示器用片材 Anisotropic conductive film and sheet for liquid crystal display

本發明係關於一種異向導電性膜。 The present invention relates to an anisotropic conductive film.

已知有一種厚度方向之導電性較高,且垂直於厚度方向之面內方向之絕緣性較高之膜。此種膜有時被稱為異向導電性膜。異向導電性膜之一例係記載於專利文獻1及2中。專利文獻1之異向導電性膜於形成於絕緣性膜之多個貫通孔,填充有源自鍍敷法之金屬物質。專利文獻2之異向導電性膜於形成於絕緣性膜之多個貫通孔,填充有導電性粒子及填充劑。 It is known that there is a film with high conductivity in the thickness direction and high insulation in the in-plane direction perpendicular to the thickness direction. Such a film is sometimes called an anisotropic conductive film. An example of the anisotropic conductive film is described in Patent Documents 1 and 2. The anisotropic conductive film of Patent Document 1 is filled with a metal substance derived from a plating method in a plurality of through holes formed in an insulating film. The anisotropic conductive film of Patent Document 2 is filled with conductive particles and a filler in a plurality of through holes formed in an insulating film.

於一例中,異向導電性膜被插入至電路基板彼此之間,且藉由加熱及壓接而固定於該等電路基板之間。異向導電性膜之厚度方向之導電性較高,故而確保了一電路基板之電極與另一電路基板之電極之間的電性連接。另一方面,異向導電性膜之面內方向之絕緣性較高,故而不易產生一電路基板內之多個電極間之不必要之短路,亦不易產生另一電路基板內之多個電極間之不必要之短路。於另一例中,異向導電性膜介置於電子元件與電路基板之間。具體而言,異向導電性膜係用作半導電體元件或電子零件等電子元件之安裝用連接構件,或用作功能檢查用連接器。 In one example, the anisotropic conductive film is inserted between the circuit boards, and is fixed between the circuit boards by heating and pressure bonding. The conductivity of the anisotropic conductive film in the thickness direction is relatively high, thus ensuring electrical connection between the electrodes of one circuit board and the electrodes of another circuit board. On the other hand, the in-plane insulation of the anisotropic conductive film is high, so it is not easy to generate unnecessary short circuits between the electrodes in one circuit substrate, and it is not easy to generate electrodes between the other circuit substrates. Unnecessary short circuit. In another example, the anisotropic conductive film is interposed between the electronic component and the circuit substrate. Specifically, the anisotropic conductive film is used as a connecting member for mounting electronic components such as semiconductor elements or electronic parts, or as a connector for functional inspection.

先前技術文獻 Prior technical literature 專利文獻 Patent Literature

專利文獻1:日本特開平5-325669 Patent Literature 1: Japanese Patent Laid-Open No. 5-325669

專利文獻2:日本特開2002-75064 Patent Literature 2: Japanese Patent Laid-Open No. 2002-75064

專利文獻1及2中記載之異向導電性膜係形成於絕緣性膜之多個貫通孔完全被阻塞。根據本發明人等之研究,若貫通孔完全被阻塞,則難以確保異向導電性膜之厚度方向之透光性。 The anisotropic conductive films described in Patent Documents 1 and 2 are formed in which a plurality of through holes in the insulating film are completely blocked. According to studies by the present inventors, if the through-holes are completely blocked, it is difficult to ensure the light transmittance in the thickness direction of the anisotropic conductive film.

為了解決上述習知技術之缺點,本發明提供一種異向導電性膜,其具有表面及背面者,且該異向導電性膜具備樹脂膜,該樹脂膜具有多個貫通孔,且多個上述貫通孔各別由經導電材料覆蓋之內壁面規定,上述導電材料構成筒狀體,該筒狀體於內部具有自上述表面延伸至上述背面之空孔。 In order to solve the shortcomings of the above-mentioned conventional technology, the present invention provides an anisotropic conductive film having a front surface and a back surface, and the anisotropic conductive film includes a resin film having a plurality of through holes and a plurality of the above The through holes are each defined by an inner wall surface covered with a conductive material, and the conductive material constitutes a cylindrical body having a hollow hole extending from the surface to the back surface inside.

本發明之異向導電性膜係導電材料覆蓋規定樹脂膜之貫通孔的內壁面,但於該導電材料之內部形成有空孔。因此,本發明之異向導 電性膜適於確保厚度方向之透光性。 The anisotropic conductive film of the present invention is a conductive material covering the inner wall surface of a through hole of a predetermined resin film, but a void is formed inside the conductive material. Therefore, the different guides of the present invention The electrical film is suitable for ensuring light transmittance in the thickness direction.

10:異向導電性膜 10: Anisotropic conductive film

11:表面 11: Surface

12:背面 12: back

15:空孔 15: empty hole

20:樹脂膜 20: resin film

21:表面 21: Surface

22:背面 22: back

24:內壁面 24: inner wall surface

25:貫通孔 25: through hole

27:實心之部分 27: The solid part

30:筒狀體 30: cylindrical body

33:導電材料 33: conductive material

39:外輪廓 39: outer contour

圖1係模式性地表示異向導電性膜之一例之剖面圖。 FIG. 1 is a cross-sectional view schematically showing an example of an anisotropic conductive film.

圖2係模式性地表示異向導電性膜之一例之俯視圖。 2 is a plan view schematically showing an example of an anisotropic conductive film.

圖3模式性地表示樹脂膜之一例之剖面圖。 FIG. 3 schematically shows a cross-sectional view of an example of a resin film.

以下,一面參照隨附之圖式,一面對本發明之實施形態進行說明,但以下僅為本發明之實施形態之示例,而並非旨在限制本發明。 Hereinafter, the embodiments of the present invention will be described with reference to the accompanying drawings, but the following are only examples of the embodiments of the present invention and are not intended to limit the present invention.

使用圖1及圖2,對本實施形態之異向導電性膜進行說明。異向導電性膜10具有樹脂膜20、及導電材料33。樹脂膜20係絕緣性較高(即,導電性較低)之膜。導電材料33係導電性較高之材料。導電材料33構成於內部具有自表面11延伸至背面12之空孔15之筒狀體(筒狀之導電層)30。具體而言,存在多個由導電材料33所構成之筒狀體30。該等多個筒狀體30係互相隔開,並且自異向導電性膜10之表面11延伸至背面12。因以此方式構成,故多個筒狀體30雖提供異向導電性膜10之厚度方向之導電性,但無法大幅地提高與厚度方向垂直之面內方向之導電性。樹脂膜20係確保面內方向之絕緣性。即,藉由樹脂膜20與導電材料33之組合,而提供異向導電性膜10之異向導電性。又,筒狀體30之空孔15具有於異向導電性膜10之厚度方向使光穿透(確保厚度方向之透明性)之功能。再者,於本說明書中,異向導電性係指異向導電性膜10之厚度方向之導電性較 高,且面內方向之絕緣性較高之性質。 The anisotropic conductive film of this embodiment will be described using FIGS. 1 and 2. The anisotropic conductive film 10 has a resin film 20 and a conductive material 33. The resin film 20 is a film with high insulation (that is, low conductivity). The conductive material 33 is a material with high conductivity. The conductive material 33 is constituted by a cylindrical body (cylindrical conductive layer) 30 having voids 15 extending from the front surface 11 to the rear surface 12 inside. Specifically, there are a plurality of cylindrical bodies 30 made of conductive material 33. The plurality of cylindrical bodies 30 are spaced apart from each other, and extend from the front surface 11 to the back surface 12 of the anisotropic conductive film 10. With this configuration, although the plurality of cylindrical bodies 30 provide the conductivity in the thickness direction of the anisotropic conductive film 10, the conductivity in the in-plane direction perpendicular to the thickness direction cannot be greatly improved. The resin film 20 ensures insulation in the in-plane direction. That is, the combination of the resin film 20 and the conductive material 33 provides the anisotropic conductivity of the anisotropic conductive film 10. In addition, the hole 15 of the cylindrical body 30 has a function of transmitting light in the thickness direction of the anisotropic conductive film 10 (ensuring transparency in the thickness direction). Furthermore, in this specification, the anisotropic conductivity means that the conductivity of the anisotropic conductive film 10 in the thickness direction is High and high insulation in the in-plane direction.

如圖3所示,於樹脂膜20,形成有多個貫通孔25。多個貫通孔25各別由樹脂膜20之內壁面24規定。換言之,多個貫通孔25各別由內壁面24包圍。內壁面24係應被導電材料33覆蓋之面。本實施形態之樹脂膜20由內部被樹脂填滿之實心之部分27、及多個貫通孔25所構成。樹脂膜20之表面21及背面22構成異向導電性膜10之表面11及背面12之一部分。 As shown in FIG. 3, a plurality of through holes 25 are formed in the resin film 20. The plurality of through holes 25 are each defined by the inner wall surface 24 of the resin film 20. In other words, the plurality of through holes 25 are each surrounded by the inner wall surface 24. The inner wall surface 24 should be covered by the conductive material 33. The resin film 20 of this embodiment is composed of a solid portion 27 filled with resin inside, and a plurality of through holes 25. The front surface 21 and the back surface 22 of the resin film 20 constitute a part of the front surface 11 and the back surface 12 of the anisotropic conductive film 10.

就藉由確保異向導電性膜10之面內方向之絕緣性而確保異向導電性之觀點而言,較佳為表面21及背面22之絕緣性較高。就該觀點而言,樹脂膜20之材料可選自絕緣性一定程度上較高之材料。具體而言,樹脂膜20之材料可為包含選自由聚對苯二甲酸乙二酯(PET)、聚碳酸酯、聚萘二甲酸乙二酯、聚醯亞胺及聚偏二氟乙烯所組成之群中之至少一種之材料。 From the viewpoint of securing the anisotropic conductivity by ensuring the in-plane direction insulation of the anisotropic conductive film 10, it is preferable that the insulation of the front surface 21 and the back surface 22 is high. From this point of view, the material of the resin film 20 may be selected from materials whose insulation is somewhat high. Specifically, the material of the resin film 20 may be selected from the group consisting of polyethylene terephthalate (PET), polycarbonate, polyethylene naphthalate, polyimide, and polyvinylidene fluoride At least one kind of material in the group.

就確保異向導電性膜10之厚度方向之透光性之觀點而言,較佳為樹脂膜20之厚度並非過大。亦就確保異向導電性膜10之厚度方向之導電性之觀點而言,較佳為樹脂膜20之厚度並非過大。若考慮該等觀點,則樹脂膜20之厚度例如為4~130μm,又,例如為10~130μm,較佳為10~100μm,更佳為10~60μm。 From the viewpoint of ensuring light transmittance in the thickness direction of the anisotropic conductive film 10, it is preferable that the thickness of the resin film 20 is not excessively large. From the viewpoint of ensuring the conductivity in the thickness direction of the anisotropic conductive film 10, it is preferable that the thickness of the resin film 20 is not excessively large. Considering these points of view, the thickness of the resin film 20 is, for example, 4 to 130 μm, and, for example, 10 to 130 μm, preferably 10 to 100 μm, and more preferably 10 to 60 μm.

就確保異向導電性膜10之厚度方向之透光性之觀點而言,較佳為貫通孔25之直徑並非過小。就該觀點而言,貫通孔25之直徑(直徑)例如為0.5~35μm,又,例如為1~35μm,又,例如亦可為1~15μm、及2~15μm。於本實施形態中,貫通孔25於表面21或背面22,構成直徑 為35μm以下(具體而言,為15μm以下)之開口。 From the viewpoint of ensuring the light transmittance in the thickness direction of the anisotropic conductive film 10, it is preferable that the diameter of the through hole 25 is not too small. From this viewpoint, the diameter (diameter) of the through-hole 25 is, for example, 0.5 to 35 μm, and for example, 1 to 35 μm, or for example, 1 to 15 μm, and 2 to 15 μm. In the present embodiment, the through-hole 25 is formed on the front surface 21 or the back surface 22 to form a diameter An opening of 35 μm or less (specifically, 15 μm or less).

就確保異向導電性膜10之厚度方向之導電通路之數量,從而確保厚度方向之導電性,藉此確保異向導電性之觀點而言,貫通孔25之密度較佳為一定程度上較大。但,若貫通孔25之密度過大,則存在因貫通孔25中之光之散射而較大地損及異向導電性膜10之厚度方向之透光性之情況。若考慮該等方面,則多個貫通孔25之密度較佳為1×103~1×1010個/cm2,更佳為1×104~1×109個/cm2。再者,若一面確保異向導電性膜10之異向導電性,一面實現異向導電性膜10之輕薄短小化,則樹脂膜20較佳為具有小徑且多個之貫通孔25。將貫通孔25之直徑及密度這兩者設為上述之範圍亦適於該目的。 From the viewpoint of ensuring the number of conductive paths in the thickness direction of the anisotropic conductive film 10 and thereby ensuring the electrical conductivity in the thickness direction, thereby ensuring the anisotropic conductivity, the density of the through holes 25 is preferably larger to a certain extent . However, if the density of the through-hole 25 is too large, the light transmittance in the thickness direction of the anisotropic conductive film 10 may be greatly impaired by the scattering of light in the through-hole 25. Taking these aspects into consideration, the density of the plurality of through holes 25 is preferably 1×10 3 to 1×10 10 pieces/cm 2 , and more preferably 1×10 4 to 1×10 9 pieces/cm 2 . Furthermore, if the anisotropic conductivity of the anisotropic conductive film 10 is ensured and the thickness of the anisotropic conductive film 10 is reduced, the resin film 20 preferably has a plurality of through holes 25 having a small diameter. It is also suitable for this purpose to set both the diameter and the density of the through-hole 25 to the above-mentioned range.

自厚度方向觀察異向導電性膜10時之所有多個貫通孔25之剖面面積之總和相對於由異向導電性膜10之輪廓規定之面積的比率(開口率)例如為0.05~0.5,亦可為0.2~0.4。再者,關於原因之詳情仍在研究中,但異向導電性膜10所具有之所有筒狀體(筒狀之導電層)30之體積之合計(總體積)一定程度上較大,具有容易確保異向導電性膜10之厚度方向之導電性之傾向。即,於藉由下述濺鍍(及蝕刻)等而於各貫通孔25內形成特定之壁厚之筒狀體30之情形時,於開口率如上述程度般較高並且貫通孔25之直徑一定程度上較小(例如,15μm以下)之狀況下,換言之,於如一定程度上較多地存在一定程度小徑之貫通孔25般之所有內壁面24之面積之合計(總面積)較大之狀況下,存在容易確保厚度方向之導電性之傾向。 The ratio (aperture ratio) of the sum of the cross-sectional areas of all the plurality of through holes 25 to the area defined by the outline of the anisotropic conductive film 10 when viewing the anisotropic conductive film 10 from the thickness direction is, for example, 0.05 to 0.5, or It can be 0.2~0.4. In addition, the details of the cause are still under investigation, but the total volume (total volume) of all the cylindrical bodies (cylindrical conductive layers) 30 of the anisotropic conductive film 10 is somewhat larger, which is easy The tendency to ensure the conductivity of the anisotropic conductive film 10 in the thickness direction. That is, when the cylindrical body 30 with a specific thickness is formed in each through-hole 25 by sputtering (and etching) described below, etc., the opening ratio is as high as the above-mentioned degree and the diameter of the through-hole 25 In the case where it is relatively small (for example, 15 μm or less), in other words, the total area (total area) of all the inner wall surfaces 24 such as the through-holes 25 with small diameters to a certain extent is greater. Under such circumstances, there is a tendency to easily ensure conductivity in the thickness direction.

就確保異向導電性膜10之厚度方向之透光性之觀點而言,樹脂膜20之厚度方向與貫通孔25之軸方向之間之角度較佳為並非過大。 又,亦就藉由確保異向導電性膜10之厚度方向之導電性而確保異向導電性之觀點而言,該角度較佳為並非過大。就該等觀點而言,該角度較佳為0~30°,更佳為0~15°,進而較佳為0~2°。 From the viewpoint of ensuring the light transmittance in the thickness direction of the anisotropic conductive film 10, the angle between the thickness direction of the resin film 20 and the axial direction of the through hole 25 is preferably not too large. Also, from the viewpoint of ensuring the anisotropic conductivity by ensuring the electrical conductivity in the thickness direction of the anisotropic conductive film 10, the angle is preferably not too large. From these viewpoints, the angle is preferably 0 to 30°, more preferably 0 to 15°, and further preferably 0 to 2°.

貫通孔25之形狀並無特別限定。例如,貫通孔25係直線狀延伸之直孔。作為貫通孔25之具體形狀,可例示圓柱形狀、圓錐台形狀、沙漏形狀(2個圓錐台組合而成之形狀,且各個面積較小之側之底面連接而成之形狀)。 The shape of the through hole 25 is not particularly limited. For example, the through hole 25 is a straight hole extending linearly. As a specific shape of the through-hole 25, a cylindrical shape, a truncated cone shape, and an hourglass shape (a shape in which two truncated cones are combined, and a shape formed by connecting the bottom surfaces of the sides with smaller areas) can be exemplified.

導電材料33覆蓋規定樹脂膜20之多個貫通孔25各自之內壁面24。導電材料33構成於內部具有自表面11延伸至背面12之空孔15之筒狀體30。空孔15係較佳地使光穿透。具體而言,存在多個由導電材料33所構成之筒狀體30。多個筒狀體30覆蓋樹脂膜20之多個內壁面24,並且互相隔開。多個筒狀體30分別自異向導電性膜10之表面11延伸至背面12,並且呈現筒狀。即,多個筒狀體30構成異向導電性膜10之表面11及背面12之一部分,並且互相隔開。因以此方式設置,故而多個筒狀體30雖提供異向導電性膜10之厚度方向上較高之導電性,但未能大幅地提高面內方向之導電性。本實施形態係於表面11及/或背面12,使多個筒狀體30分別形成之外輪廓39沿著內壁面24。具體而言,筒狀體30僅覆蓋樹脂膜20之內壁面24,而未覆蓋樹脂膜20之表面21及背面22。但,只要確保多個筒狀體30之各自之間之分隔及絕緣,則導電材料33之一部分亦可附著於表面21及背面22。 The conductive material 33 covers the inner wall surface 24 of each of the plurality of through holes 25 defining the resin film 20. The conductive material 33 is formed inside a cylindrical body 30 having a cavity 15 extending from the front surface 11 to the rear surface 12. The hole 15 preferably transmits light. Specifically, there are a plurality of cylindrical bodies 30 made of conductive material 33. The plurality of cylindrical bodies 30 cover the plurality of inner wall surfaces 24 of the resin film 20 and are spaced apart from each other. The plurality of cylindrical bodies 30 extend from the front surface 11 to the rear surface 12 of the anisotropic conductive film 10, respectively, and assume a cylindrical shape. That is, the plurality of cylindrical bodies 30 constitute part of the front surface 11 and the back surface 12 of the anisotropic conductive film 10 and are spaced apart from each other. Due to the arrangement in this manner, although the plurality of cylindrical bodies 30 provide higher conductivity in the thickness direction of the anisotropic conductive film 10, they cannot significantly improve the conductivity in the in-plane direction. The present embodiment is based on the front surface 11 and/or the back surface 12, and each of the plurality of cylindrical bodies 30 is formed with an outer contour 39 along the inner wall surface 24. Specifically, the cylindrical body 30 covers only the inner wall surface 24 of the resin film 20 and does not cover the front surface 21 and the back surface 22 of the resin film 20. However, as long as the separation and insulation between the plurality of cylindrical bodies 30 are ensured, a part of the conductive material 33 may also be attached to the front surface 21 and the back surface 22.

只要具有導電性,則導電材料33之材料並無特別限定。典型而言,導電材料33之材料為金屬或金屬氧化物。具體而言,導電材料33 之材料可為包含選自由金(Au)、銀(Ag)、銅(Cu)、氧化銦錫(ITO)及氧化銦鋅(IZO)所組成之群中之至少一種之材料。 The material of the conductive material 33 is not particularly limited as long as it has conductivity. Typically, the material of the conductive material 33 is metal or metal oxide. Specifically, the conductive material 33 The material may be at least one material selected from the group consisting of gold (Au), silver (Ag), copper (Cu), indium tin oxide (ITO), and indium zinc oxide (IZO).

就確保異向導電性膜10之厚度方向之導電性之觀點而言,筒狀體30之壁厚宜為較大。另一方面,若壁厚過大,則存在源自筒狀體30之材料之異向導電性膜10之著色變得顯著之情況,從而存在因該情況等而較大地損及厚度方向之透光性之情況。若考慮該等方面,則壁厚較佳為100~1000nm。 From the viewpoint of ensuring the conductivity in the thickness direction of the anisotropic conductive film 10, the wall thickness of the cylindrical body 30 is preferably large. On the other hand, if the wall thickness is too large, the coloring of the anisotropic conductive film 10 derived from the material of the cylindrical body 30 may become conspicuous, so that there is a large loss of light transmission in the thickness direction due to this condition, etc. Sexual situation. Considering these aspects, the wall thickness is preferably 100 to 1000 nm.

空孔15之直徑例如為0.1~30μm,又,例如為1~30μm,又,例如為1~14μm。 The diameter of the cavity 15 is, for example, 0.1 to 30 μm, and for example, 1 to 30 μm, and for example, 1 to 14 μm.

亦可將其他層介置於導電材料33與樹脂膜20之內壁面24之間。例如,可藉由介置二氧化矽(SiO2)、二氧化鈦(TiO2)、氧化鈮等無機材料層,而提昇導電材料33對內壁面24之密接性,或提昇異向導電性膜10之透明性。 Other layers may also be interposed between the conductive material 33 and the inner wall surface 24 of the resin film 20. For example, by interposing inorganic material layers such as silicon dioxide (SiO 2 ), titanium dioxide (TiO 2 ), niobium oxide, etc., the adhesion of the conductive material 33 to the inner wall surface 24 may be improved, or the transparency of the anisotropic conductive film 10 may be improved Sex.

作為異向導電性膜10之厚度方向之絕緣性(導電性)之指標,可列舉異向導電性膜10之厚度方向之體積電阻。作為異向導電性膜10之面內方向之絕緣性之指標,可列舉異向導電性膜10之膜面方向之表面電阻。就視認夾隔異向導電性膜10之相反側之觀點(確保厚度方向之視認性之觀點)而言,只要確保異向導電性膜10之波長300~800nm之光之厚度方向上相關之穿透率即可。上述體積電阻例如為1.0×10-2~1.0×1015Ω‧cm,較佳為1.0×10-2~1.0×1013Ω‧cm。上述表面電阻例如為1.0×102Ω/□以上,較佳為1.0×1014Ω/□以上。上述穿透率較佳為25~90%。只要該等3個參數處於上述範圍內,則異向導電性膜10可謂厚度方向之導電性較高且膜面 方向之絕緣性較高(即,異向導電性較高),並且具有厚度方向之視認性。上述穿透率更佳為30%~90%,進而較佳為60~90%。 As an index of the insulation (conductivity) of the anisotropic conductive film 10 in the thickness direction, the volume resistance of the anisotropic conductive film 10 in the thickness direction can be cited. As an index of the insulation in the in-plane direction of the anisotropic conductive film 10, the surface resistance of the anisotropic conductive film 10 in the film plane direction can be cited. From the viewpoint of seeing through the opposite side of the anisotropic conductive film 10 (the viewpoint of ensuring visibility in the thickness direction), as long as the relevant wear in the thickness direction of the light of the wavelength of 300 to 800 nm of the anisotropic conductive film 10 is ensured Transparency is enough. The volume resistance is, for example, 1.0×10 -2 to 1.0×10 15 Ω‧cm, preferably 1.0×10 -2 to 1.0×10 13 Ω‧cm. The surface resistance is, for example, 1.0×10 2 Ω/□ or more, preferably 1.0×10 14 Ω/□ or more. The above-mentioned penetration rate is preferably 25 to 90%. As long as these three parameters are within the above range, the anisotropic conductive film 10 can be said to have high conductivity in the thickness direction and high insulation in the film surface direction (ie, high anisotropic conductivity), and has a thickness direction Visibility. The above-mentioned penetration rate is more preferably 30% to 90%, and further preferably 60 to 90%.

異向導電性膜10可用作貼附於液晶顯示面板之液晶顯示器用片材。例如,表面11構成應與液晶顯示面板之導電部相接之表面,背面11構成應與對象材料相接之背面。於具體之一例中,液晶顯示面板之導電部為電極或控制電路,對象材料為TAB(Tape Automated Bonding)模組或COG(Chip On Glass)模組等半導體元件(電子電路)。於具體之其他例中,液晶顯示面板為觸控面板(可手動輸入文字或圖形之顯示元件),且對象材料為觸控筆。異向導電性膜10之厚度方向之較高之導電性係實現液晶顯示器用片材之較低之驅動電壓及較高之響應速度。異向導電性膜10之厚度方向之較高之穿透率係實現液晶顯示器用片材之較高之視認性(較高之透明性)。無需再言,異向導電性膜10之該等效果亦可於其他用途得以發揮。 The anisotropic conductive film 10 can be used as a sheet for liquid crystal displays attached to a liquid crystal display panel. For example, the front surface 11 constitutes the surface to be in contact with the conductive portion of the liquid crystal display panel, and the rear surface 11 constitutes the back to be in contact with the target material. In a specific example, the conductive part of the liquid crystal display panel is an electrode or a control circuit, and the target material is a semiconductor element (electronic circuit) such as a TAB (Tape Automated Bonding) module or a COG (Chip On Glass) module. In other specific examples, the liquid crystal display panel is a touch panel (a display element that can manually input text or graphics), and the object material is a stylus. The higher conductivity in the thickness direction of the anisotropic conductive film 10 realizes a lower driving voltage and a higher response speed of the sheet for liquid crystal displays. The higher transmittance in the thickness direction of the anisotropic conductive film 10 achieves higher visibility (higher transparency) of the sheet for liquid crystal displays. Needless to say, these effects of the anisotropic conductive film 10 can also be exerted in other applications.

其次,對適於製造如上所述之異向導電性膜10之製造方法之一例進行說明。 Next, an example of a manufacturing method suitable for manufacturing the anisotropic conductive film 10 as described above will be described.

首先,準備具有多個貫通孔25且多個貫通孔25之各自由內壁面24規定之樹脂膜20。於該例中,進行對原膜(樹脂膜)之離子束照射、及對照射後之膜之化學蝕刻。藉此,製作樹脂膜20。根據離子束照射及蝕刻,可製作具有表面21及背面22上之開口徑一致之多個貫通孔25之樹脂膜20。又,離子束照射及蝕刻係於不進而實施將膜之主面(表面及背面)進行加工或處理之步驟之情形時,除了形成貫通孔25之開口以外,可獲得具有與原膜之主面相同之狀態之主面之樹脂膜20。因此,例如,若選擇主面之平滑度較高之膜作為原膜,則可獲得具有與之相應之較高之平滑度之 主面(例如,除上述開口以外,主面平坦)之樹脂膜20。典型而言,原膜為無孔之樹脂膜。原膜之材料可為與樹脂膜20之材料相同之材料。 First, a resin film 20 having a plurality of through holes 25 and each of the plurality of through holes 25 defined by the inner wall surface 24 is prepared. In this example, ion beam irradiation of the original film (resin film) and chemical etching of the film after irradiation were performed. With this, the resin film 20 is produced. According to ion beam irradiation and etching, a resin film 20 having a plurality of through holes 25 having the same opening diameter on the front surface 21 and the rear surface 22 can be produced. In addition, when ion beam irradiation and etching are performed without further processing or treatment of the main surface (front and back) of the film, in addition to forming the opening of the through-hole 25, a main surface with the original film can be obtained The resin film 20 on the main surface in the same state. Therefore, for example, if a film with a higher smoothness on the main surface is selected as the original film, a film with a higher smoothness corresponding to it can be obtained The resin film 20 on the main surface (for example, the main surface is flat except for the opening). Typically, the original film is a non-porous resin film. The material of the original film may be the same material as the resin film 20.

將離子束照射於原膜時之離子照射量可根據樹脂膜20應具有之貫通孔25之密度而適當地調整。 The ion irradiation amount when the ion beam is irradiated to the original film can be appropriately adjusted according to the density of the through-hole 25 that the resin film 20 should have.

用以形成貫通孔25之蝕刻係選擇與原膜之材料(即,樹脂膜20之材料)相應之蝕刻處理液。作為蝕刻處理液,例如,可列舉鹼性溶液及氧化劑溶液。鹼性溶液例如為含有氫氧化鉀及/或氫氧化鈉作為主成分之溶液,亦可更含有氧化劑。可藉由使用鹼性溶液,而將構成原膜之樹脂水解。氧化劑溶液係例如含有選自亞氯酸、亞氯酸鹽、次氯酸、次氯酸鹽、過氧化氫及過錳酸鉀之至少1種作為主成分之溶液。可藉由使用氧化劑溶液,而將構成原膜之樹脂氧化分解。構成樹脂膜及原膜之樹脂與蝕刻處理液之組合之例係對於聚萘二甲酸乙二酯、聚碳酸酯及聚萘二甲酸乙二酯為鹼性溶液(例如,以氫氧化鈉為主成分之溶液),且對於聚醯亞胺及聚偏二氟乙烯為氧化劑溶液(例如,以次氯酸鈉為主成分之溶液)。 The etching for forming the through-hole 25 is an etching treatment liquid corresponding to the material of the original film (that is, the material of the resin film 20). Examples of the etching treatment liquid include alkaline solutions and oxidant solutions. The alkaline solution is, for example, a solution containing potassium hydroxide and/or sodium hydroxide as a main component, and may further contain an oxidizing agent. The resin constituting the original film can be hydrolyzed by using an alkaline solution. The oxidant solution is, for example, a solution containing at least one selected from chlorous acid, chlorite, hypochlorous acid, hypochlorite, hydrogen peroxide, and potassium permanganate as a main component. The resin constituting the original film can be oxidized and decomposed by using an oxidant solution. An example of the combination of the resin constituting the resin film and the original film and the etching solution is an alkaline solution for polyethylene naphthalate, polycarbonate, and polyethylene naphthalate (for example, sodium hydroxide is the main solution Component solution), and polyimide and polyvinylidene fluoride as oxidant solutions (for example, a solution containing sodium hypochlorite as the main component).

蝕刻之時間及蝕刻處理液之濃度可根據樹脂膜20應具有之貫通孔25之直徑等而適當地調整。 The etching time and the concentration of the etching solution can be adjusted as appropriate according to the diameter of the through-hole 25 that the resin film 20 should have.

作為樹脂膜20,可使用市售之膜。市售之膜例如由Oxyphen公司及Millipore公司作為膜濾器販賣。 As the resin film 20, a commercially available film can be used. Commercially available membranes are sold by Oxyphen and Millipore as membrane filters, for example.

其次,以導電材料33覆蓋內壁面24之方式,藉由濺鍍而將導電材料33供給至樹脂膜20。導電材料33之材料係如上所述。 Next, the conductive material 33 is supplied to the resin film 20 by sputtering so that the inner wall surface 24 is covered with the conductive material 33. The material of the conductive material 33 is as described above.

濺鍍既可使導電材料飛濺至樹脂膜20之表面21及背面22這兩者,亦可使導電材料僅飛濺至表面21及背面22之其中一者。於任一情 形時,導電材料33均為不僅覆蓋表面21及/或背面22,而且亦覆蓋內壁面24,從而於內壁面24上形成膜。 Sputtering can make the conductive material splash to both the surface 21 and the back surface 22 of the resin film 20, or it can make the conductive material splash only to one of the surface 21 and the back surface 22. In any mood In the shape, the conductive material 33 covers not only the front surface 21 and/or the back surface 22, but also the inner wall surface 24, so that a film is formed on the inner wall surface 24.

其次,將覆蓋樹脂膜20之表面21及/或背面22之導電材料33去除。藉此,將表面21上及/或背面22上之面內方向之導電通路去除,獲得圖1及2所示之異向導電性膜10。 Next, the conductive material 33 covering the surface 21 and/or the back surface 22 of the resin film 20 is removed. By this, the in-plane conductive paths on the surface 21 and/or the back surface 22 are removed, and the anisotropic conductive film 10 shown in FIGS. 1 and 2 is obtained.

將導電材料33自表面21及/或背面22去除之方法並無特別限定。於一例中,可採用使用氬(Ar)等離子之離子研磨。於其他例中,可採用導電材料33之蝕刻。導電材料33之蝕刻可將酸性溶液(例如,含有選自鹽酸、硫酸及硝酸之至少1種作為主成分之溶液)用作蝕刻處理液。又,於樹脂膜20之表面21及/或背面22之一部分露出之情形時,亦可藉由自露出部分至被導電材料33覆蓋之部分進行樹脂膜20之蝕刻,而使附著於表面21上及/或背面22上之導電材料33脫落。作為此情形時之蝕刻處理液,可使用用以形成貫通孔25之蝕刻中使用之蝕刻處理液。 The method of removing the conductive material 33 from the front surface 21 and/or the back surface 22 is not particularly limited. In one example, ion milling using argon (Ar) plasma can be used. In other examples, the etching of the conductive material 33 may be used. For the etching of the conductive material 33, an acidic solution (for example, a solution containing at least one selected from hydrochloric acid, sulfuric acid, and nitric acid as a main component) can be used as an etching treatment liquid. In addition, when a part of the surface 21 and/or the back surface 22 of the resin film 20 is exposed, the resin film 20 may be etched from the exposed portion to the portion covered by the conductive material 33 to adhere to the surface 21 And/or the conductive material 33 on the back surface 22 comes off. As the etching treatment liquid in this case, an etching treatment liquid used for etching for forming the through-hole 25 can be used.

根據本發明人等之研究,難以利用專利文獻1及2中記載之技術,形成於內部具有空孔之筒狀之導電層。與此相對,根據導電材料33之濺鍍,可形成於內部具有自表面11延伸至背面12之空孔15之筒狀體(筒狀之導電層)30。即,濺鍍適於提供厚度方向之透光性優異之異向導電性膜10。又,於採用如專利文獻1中記載之鍍敷法之情形時,易於偏向地形成金屬物質,從而易於產生一部分之貫通孔內因金屬物質不足所導致之電性特性之不均一。利用專利文獻2之技術,難以使導電性粒子均一地分散。與此相對,根據濺鍍,可將導電材料33均一地供給至多個貫通孔25內。根據蝕刻,可容易地去除面內方向之導電通路。即,濺鍍及蝕刻之組合適於 提供厚度方向之導電性及面內方向之絕緣性較高且該等導電性及絕緣性均一之異向導電性膜10。該組合係符合提昇電性連接之精細度(此處係確保異向導電性並且實現輕薄短小化)之近年之要求。 According to the studies of the present inventors, it is difficult to use the techniques described in Patent Documents 1 and 2 to form a cylindrical conductive layer having voids inside. On the other hand, according to the sputtering of the conductive material 33, a cylindrical body (cylindrical conductive layer) 30 having voids 15 extending from the front surface 11 to the back surface 12 can be formed inside. That is, sputtering is suitable for providing the anisotropic conductive film 10 excellent in light transmittance in the thickness direction. In addition, when the plating method described in Patent Document 1 is used, it is easy to form a metal substance in a biased manner, so that a part of the through-holes tends to have uneven electrical characteristics due to insufficient metal substance. With the technique of Patent Document 2, it is difficult to uniformly disperse conductive particles. On the other hand, according to sputtering, the conductive material 33 can be uniformly supplied into the plurality of through holes 25. According to the etching, the conductive path in the in-plane direction can be easily removed. That is, the combination of sputtering and etching is suitable The anisotropic conductive film 10 is provided in which the conductivity in the thickness direction and the insulation in the in-plane direction are high and the conductivity and insulation are uniform. This combination meets the requirements of recent years to improve the fineness of electrical connections (here, to ensure anisotropic conductivity and achieve thinner, shorter, and shorter).

[實施例] [Example]

藉由實施例,對本發明詳細地進行說明。但,以下實施例係表示本發明之一例,而本發明並不限定於以下實施例。首先,對實施例及比較例之樣品之評價方法進行說明。 The present invention will be described in detail by examples. However, the following examples represent an example of the present invention, and the present invention is not limited to the following examples. First, the evaluation methods of samples in Examples and Comparative Examples will be described.

<膜厚> <film thickness>

使用針盤量規(股份有限公司三豐製造),對任意選擇之5點,測定各樣品之膜厚,且將其平均值作為膜厚。 Using a dial gauge (manufactured by Mitutoyo Co., Ltd.), the film thickness of each sample was measured at 5 points selected arbitrarily, and the average value was used as the film thickness.

<貫通孔之直徑、角度> <diameter and angle of through hole>

藉由掃描型電子顯微鏡(SEM:JEOL公司(日本電子股份有限公司)製造,JSM-6510LV),觀察各樣品之表面及背面,求出自所得之SEM像任意選擇之10個貫通孔之直徑,並將其平均值作為貫通孔之直徑(貫通孔徑)。又,使用相同之SEM,觀察各樣品之剖面SEM像,求出自所獲得之剖面SEM像任意選擇之10個貫通孔之角度,並將其平均值作為貫通孔之角度。 Using a scanning electron microscope (SEM: manufactured by JEOL Corporation (Japan Electronics Co., Ltd.), JSM-6510LV), the surface and back surface of each sample were observed, and the diameters of 10 through holes arbitrarily selected from the obtained SEM image were obtained. The average value is regarded as the diameter of the through hole (through hole diameter). Furthermore, using the same SEM, the cross-sectional SEM images of each sample were observed, and the angles of 10 through-holes arbitrarily selected from the obtained cross-sectional SEM images were obtained, and the average value was used as the angle of the through-holes.

<開口率> <opening rate>

藉由上述SEM,觀察樣品之表面及背面,且以目視對所得之SEM像中之每一單位面積之貫通孔之數量進行計數。繼而,算出根據利用上述方法測定所得之貫通孔徑求出的貫通孔之面積。將貫通孔之數量與貫通孔之面積的乘積除以SEM像之面積所得之值乘以100,確定各樣品之開口率。 With the above SEM, the surface and back surface of the sample were observed, and the number of through holes per unit area in the obtained SEM image was counted visually. Then, the area of the through-holes determined from the through-hole diameters measured by the above method was calculated. The product of the number of through holes and the area of the through holes divided by the area of the SEM image was multiplied by 100 to determine the aperture ratio of each sample.

<孔密度> <pore density>

以目視對樣品之表面及背面之SEM像中之每一單位面積之貫通孔之數量進行計數,且換算為貫通孔之密度(孔密度,單位:個/cm2)。 The number of through holes per unit area in the SEM images of the surface and back of the sample was counted visually and converted into the density of through holes (pore density, unit: pcs/cm 2 ).

<筒狀體(Cu層)之壁厚> <Wall thickness of cylindrical body (Cu layer)>

藉由上述SEM而觀察各樣品之剖面,對自所得之剖面SEM像中任意選擇之10點,測定貫通孔壁面之筒狀體之壁厚,並將其平均值作為筒狀體之壁厚。 The cross section of each sample was observed by the SEM described above, and at 10 points arbitrarily selected from the obtained cross-sectional SEM image, the wall thickness of the cylindrical body of the through-hole wall surface was measured, and the average value thereof was taken as the wall thickness of the cylindrical body.

<空孔之直徑> <diameter of hole>

藉由將貫通孔徑減去筒狀體之壁厚之2倍,而計算空孔之直徑(空孔徑)。 The diameter of the hollow hole (empty hole diameter) is calculated by subtracting twice the wall thickness of the cylindrical body from the through hole diameter.

<表面電阻> <surface resistance>

各樣品之表面電阻係使用電阻率計(股份有限公司三菱化學ANALYTECH製造,MCP-HT450型),測定對樣品之表面及背面分別施加10V時之值。再者,該電阻率計係進行依據JIS-K6911之測定者。具體而言,各樣品之表面電阻之測定係將正電極及負電極壓抵於樣品之表面,將屏蔽電極置放於樣品之背面。該構成適合使於樣品之厚度方向繞入之電流流向地面,而僅測定表面上流動之電流。表面側之電極(正電極及負電極)與屏蔽電極之間之壓力設為100Pa。再者,於樣品較薄之情形時,亦考慮減小上述壓力(例如,降低至大致0Pa為止),提昇表面電阻之測定精度。 The surface resistance of each sample was measured using a resistivity meter (manufactured by Mitsubishi Chemical Corporation ANALYTECH Co., Ltd., MCP-HT450 type), and the value when 10 V was applied to the front and back of the sample, respectively. In addition, this resistivity meter performs measurement according to JIS-K6911. Specifically, the surface resistance of each sample is measured by pressing the positive electrode and the negative electrode against the surface of the sample, and placing the shield electrode on the back of the sample. This configuration is suitable for flowing the current flowing in the thickness direction of the sample to the ground, and measuring only the current flowing on the surface. The pressure between the electrode on the front side (positive electrode and negative electrode) and the shield electrode was set to 100 Pa. In addition, when the sample is thin, it is also considered to reduce the pressure (for example, to approximately 0 Pa) to improve the measurement accuracy of the surface resistance.

<體積電阻> <Volume resistance>

各樣品之體積電阻係以如下方式測定。首先,藉由切斷樣品而獲得3cm×3cm之小片。繼而,於已實施鍍金之正負極間夾隔小片,且於此狀態下, 使1mA之電流流入正負極間,測定此時之正負極間之電壓,且藉由電壓除以電流而測定體積電阻。 The volume resistance of each sample was measured as follows. First, a small piece of 3 cm×3 cm was obtained by cutting the sample. Then, a small piece is sandwiched between the positive and negative electrodes that have been gold-plated, and in this state, A current of 1 mA was flowed between the positive and negative electrodes, the voltage between the positive and negative electrodes at this time was measured, and the volume resistance was measured by dividing the voltage by the current.

<光學特性> <optical characteristics>

利用分光光度計(日本分光股份有限公司製造,V560)測定各樣品之膜厚方向之穿透率。測定波長範圍設為300~800nm。 The transmittance in the film thickness direction of each sample was measured using a spectrophotometer (manufactured by Japan Spectroscopy Co., Ltd., V560). The measurement wavelength range is set to 300 to 800 nm.

<實施例1~14> <Examples 1 to 14>

準備於厚度方向形成有多個貫通孔之市售之PET膜(it4ip製造,Track etched membrane)。該膜係對無孔之PET膜照射離子束,且將照射後之膜進行化學蝕刻而製造之樹脂膜。該膜之膜厚為5~115μm,貫通孔徑為0.8~10μm,開口率為7.5~45%。藉由濺鍍,而於該等PET膜之表面、背面、及貫通孔之內壁面形成300~900nm之Cu層。作為靶,使用住友金屬礦山股份有限公司製造之Cu靶。濺鍍係使用濺鍍蒸鍍裝置(ULVC(股份有限公司ULVAC)公司製造,SMH-2306RE)。施加電壓設為直流0.5~3.0kV。Ar氣流量設為50~300 SCCM。於濺鍍之後,於60℃~80℃使樹脂膜浸漬於10~30wt%之氫氧化鉀水溶液。藉由以此方式將樹脂膜之表面及背面進行蝕刻而將Cu層去除(由蝕刻所致之樹脂膜之厚度之減少幅度小無法以針盤量規測定之程度)。以此方式製作各樣品。 A commercially available PET film (manufactured by it4ip, Track etched membrane) with a plurality of through holes formed in the thickness direction is prepared. This film is a resin film produced by irradiating an ion beam to a non-porous PET film and chemically etching the irradiated film. The thickness of the film is 5 to 115 μm, the through pore diameter is 0.8 to 10 μm, and the aperture ratio is 7.5 to 45%. By sputtering, a Cu layer of 300 to 900 nm is formed on the front surface, back surface of the PET film, and the inner wall surface of the through hole. As a target, a Cu target manufactured by Sumitomo Metal Mining Co., Ltd. was used. For the sputtering system, a sputtering vapor deposition device (manufactured by ULVC (ULVAC Co., Ltd., SMH-2306RE)) was used. The applied voltage is set to DC 0.5~3.0kV. Ar gas flow rate is set to 50~300 SCCM. After sputtering, the resin film is immersed in 10-30 wt% potassium hydroxide aqueous solution at 60°C to 80°C. By etching the front and back surfaces of the resin film in this way, the Cu layer is removed (the extent to which the thickness of the resin film caused by etching is small cannot be measured with a dial gauge). Each sample was made in this way.

<實施例15> <Example 15>

藉由對無孔之PET膜照射雷射,而製作膜厚為45μm貫通孔徑為30μm開口率為25%之樹脂膜。藉由濺鍍,而於PET膜之表面、背面、及貫通孔之內壁面形成300nm之Cu層。作為靶,使用住友金屬礦山股份有限公司製造之Cu靶。濺鍍係使用濺鍍蒸鍍裝置(ULVC(股份有限公司ULVAC) 公司製造,SMH-2306RE)。施加電壓設為直流0.5~3.0kV。Ar氣流量設為50 SCCM。於濺鍍之後,於65℃使樹脂膜浸漬於12wt%之氫氧化鉀水溶液。以此方式,將樹脂膜之表面上及背面上之Cu層去除。以此方式製作樣品。 By irradiating the non-porous PET film with laser, a resin film with a film thickness of 45 μm, a through hole diameter of 30 μm, and an opening ratio of 25% was produced. By sputtering, a 300 nm Cu layer was formed on the surface, back surface of the PET film, and the inner wall surface of the through hole. As a target, a Cu target manufactured by Sumitomo Metal Mining Co., Ltd. was used. Sputtering system uses sputtering evaporation equipment (ULVC (ULVAC Co., Ltd.) Made by the company, SMH-2306RE). The applied voltage is set to DC 0.5~3.0kV. The Ar gas flow rate is set to 50 SCCM. After sputtering, the resin film was immersed in a 12 wt% potassium hydroxide aqueous solution at 65°C. In this way, the Cu layer on the surface and the back of the resin film is removed. Make samples in this way.

<比較例1> <Comparative Example 1>

模擬專利文獻1之實施例之方法(將雷射加工與鍍敷法組合而成之方法),製作樣品。所得之樣品係形成於聚醯亞胺膜之多個貫通孔被鎳完全阻塞。 Samples were prepared by simulating the method of the embodiment of Patent Document 1 (method combining laser processing and plating method). In the obtained sample, the through holes formed in the polyimide film were completely blocked by nickel.

將每一實施例及比較例中,測定膜厚、貫通孔徑、開口率、孔密度、孔角度、Cu層壁厚、空孔徑、體積電阻、表面電阻及穿透率所得之結果示於表1中。 The results obtained by measuring the film thickness, through-hole diameter, aperture ratio, pore density, pore angle, Cu layer wall thickness, pore diameter, volume resistance, surface resistance, and penetration in each example and comparative example are shown in Table 1. in.

Figure 105120498-A0305-02-0016-1
Figure 105120498-A0305-02-0016-1

再者,實施例10之樣品之表面電阻相對較小之原因在於:實施例10之較薄且無剛性之樣品存在電阻率計之端子刺入樣品表面(端子 鑽進樣品內部),導致貫通孔內之Cu層對測定結果造成影響之可能性。於表1中,對測定值「7.9E+02」添加記號「≧」係如此之原因。實施例14之樣品之表面電阻相對較小之理由在於:實施例14之開口率較大之樣品存在電極容易與表面附近之貫通孔之內壁面之Cu層接觸,從而該接觸對測定結果造成影響之可能性。於表1中,對測定值「2.9E+03」添加記號「≧」係如此之原因。又,貫通孔徑較小之實施例12之樣品的體積電阻及貫通孔徑較大之實施例15之樣品的體積電阻均相對較大。於實施例12之樣品中,貫通孔徑較小,於濺鍍時,Cu粒子變得難以進入貫通孔內,其結果,可預測於貫通孔內之膜厚方向之中心附近,於Cu層產生缺陷部。於實施例15之樣品中,相對大徑之貫通孔相對地存在較少,故而所有貫通孔之內壁面之面積之合計(總面積)較小,且樣品整體所具有之所有Cu層之體積之合計(總體積)較小。可預測該情況成為增大實施例15之體積電阻之主要原因。 Furthermore, the reason why the surface resistance of the sample of Example 10 is relatively small is that the thin and non-rigid sample of Example 10 has the terminal of the resistivity meter penetrated into the sample surface (terminal Drilling into the sample), resulting in the possibility that the Cu layer in the through hole will affect the measurement result. In Table 1, it is the reason why the symbol "≧" is added to the measured value "7.9E+02". The reason why the surface resistance of the sample of Example 14 is relatively small is that in the sample of Example 14 having a large aperture ratio, the electrode is likely to come into contact with the Cu layer on the inner wall surface of the through hole near the surface, so that the contact affects the measurement result. Possibility. In Table 1, it is the reason why the symbol "≧" is added to the measured value "2.9E+03". In addition, the volume resistance of the sample of Example 12 with a small through-hole diameter and the sample of Example 15 with a large through-hole diameter were relatively large. In the sample of Example 12, the through-hole diameter is small, and it is difficult for Cu particles to enter the through-hole during sputtering. As a result, it can be predicted that a defect occurs in the Cu layer near the center of the through-hole in the film thickness direction unit. In the sample of Example 15, there are relatively few through-holes with relatively large diameters, so the total area (total area) of the inner wall surfaces of all the through-holes is relatively small, and the volume of all the Cu layers in the sample as a whole The total (total volume) is small. It is predicted that this situation is the main reason for increasing the volume resistance of Example 15.

[產業上之可利用性] [Industry availability]

本發明之異向導電性膜例如可應用於需要厚度方向之透光性之用途(需要視認性之用途等)。具體而言,可用作液晶顯示器用片材。 The anisotropic conductive film of the present invention can be used for applications requiring transparency in the thickness direction (applications requiring visibility, etc.), for example. Specifically, it can be used as a sheet for liquid crystal displays.

10:異向導電性膜 10: Anisotropic conductive film

11:表面 11: Surface

12:背面 12: back

15:空孔 15: empty hole

20:樹脂膜 20: resin film

21:表面 21: Surface

22:背面 22: back

30:筒狀體 30: cylindrical body

33:導電材料 33: conductive material

39:外輪廓 39: outer contour

Claims (13)

一種異向導電性膜,其具有表面及背面,且該異向導電性膜具備樹脂膜,該樹脂膜具有多個貫通孔,且多個上述貫通孔各別由經導電材料覆蓋之內壁面規定,上述導電材料構成筒狀體,該筒狀體於內部具有自上述表面延伸至上述背面之空孔,上述貫通孔之直徑為1~15μm,自厚度方向觀察上述異向導電性膜時之所有上述貫通孔之剖面面積之總和相對於由上述異向導電性膜之輪廓規定之面積的比率為0.2~0.4。 An anisotropic conductive film having a front surface and a back surface, and the anisotropic conductive film includes a resin film having a plurality of through-holes, and the plurality of through-holes are each defined by an inner wall surface covered with a conductive material , The conductive material constitutes a cylindrical body, the cylindrical body internally has hollow holes extending from the front surface to the back surface, the diameter of the through holes is 1 to 15 μm, and all of the observation of the anisotropic conductive film from the thickness direction The ratio of the total cross-sectional area of the through hole to the area defined by the outline of the anisotropic conductive film is 0.2 to 0.4. 如申請專利範圍第1項之異向導電性膜,其中,上述導電材料僅覆蓋上述內壁面。 An anisotropic conductive film as claimed in item 1 of the patent scope, wherein the conductive material covers only the inner wall surface. 如申請專利範圍第1項之異向導電性膜,其中,上述樹脂膜之厚度為4~130μm。 For example, the anisotropic conductive film according to item 1 of the patent application, wherein the thickness of the resin film is 4 to 130 μm. 如申請專利範圍第1項之異向導電性膜,其中,上述異向導電性膜之厚度方向之體積電阻為1.0×10-2~1.0×1015Ω‧cm,其中,上述體積電阻係藉由如下方法測定,即,藉由切斷上述異向導電性膜而製作3cm×3cm之小片,且於實施鍍金之正負極間夾隔上述小片之狀態下,使1mA之電流流入上述正負極間,測定此時之上述正負極間之電壓,且將上述電壓除以上述電流。 For example, the anisotropic conductive film according to item 1 of the patent scope, wherein the volume resistance of the anisotropic conductive film in the thickness direction is 1.0×10 −2 to 1.0×10 15 Ω‧cm, where the volume resistance is borrowed It is measured by cutting the anisotropic conductive film to make a small piece of 3 cm×3 cm, and with a gold plated positive and negative electrode sandwiching the small piece, a current of 1 mA flows into the positive and negative electrode. Measure the voltage between the positive and negative electrodes at this time, and divide the voltage by the current. 如申請專利範圍第1項之異向導電性膜,其中,與上述厚度方向垂直之膜面方向的表面電阻為1.0×102Ω/□以上, 上述表面電阻係以JIS-K6911為準。 An anisotropic conductive film as claimed in item 1 of the patent application, wherein the surface resistance in the film plane direction perpendicular to the thickness direction is 1.0×10 2 Ω/□ or more, and the surface resistance is based on JIS-K6911. 如申請專利範圍第1項之異向導電性膜,其中,波長300~800nm之光之關於上述厚度方向之穿透率為25~90%。 For example, the anisotropic conductive film according to item 1 of the patent application, wherein the transmittance of light with a wavelength of 300 to 800 nm in the thickness direction is 25 to 90%. 如申請專利範圍第1項之異向導電性膜,其中,上述異向導電性膜之厚度方向之體積電阻為1.0×10-2~1.0×1013Ω‧cm,且與上述厚度方向垂直之膜面方向之表面電阻為1.0×1014Ω/□以上,波長300~800nm之光之關於上述厚度方向之穿透率為25~90%,其中,上述體積電阻係藉由如下方法測定,即,藉由切斷上述異向導電性膜而製作3cm×3cm之小片,且於實施鍍金之正負極間夾隔上述小片之狀態下,使1mA之電流流入上述正負極間,測定此時之上述正負極間之電壓,且將上述電壓除以上述電流,上述表面電阻係以JIS-K6911為準。 For example, the anisotropic conductive film according to item 1 of the patent application, wherein the volume resistance of the anisotropic conductive film in the thickness direction is 1.0×10 -2 to 1.0×10 13 Ω‧cm and is perpendicular to the thickness direction The surface resistance in the film surface direction is 1.0×10 14 Ω/□ or more, and the transmittance of light with a wavelength of 300 to 800 nm with respect to the above thickness direction is 25 to 90%, where the above volume resistance is measured by the following method, namely , By cutting the anisotropic conductive film to make a small piece of 3 cm × 3 cm, and with the gold plated positive and negative electrodes sandwiching the small pieces, a current of 1 mA flows into the positive and negative electrodes, and the above measurement at this time is measured. The voltage between the positive electrode and the negative electrode, and the voltage is divided by the current, the surface resistance is based on JIS-K6911. 如申請專利範圍第1項之異向導電性膜,其中,上述筒狀體之壁厚為100~1000nm。 For example, the anisotropic conductive film according to item 1 of the patent application, wherein the wall thickness of the cylindrical body is 100 to 1000 nm. 如申請專利範圍第1項之異向導電性膜,其中,上述導電材料含有選自由金、銀、銅、氧化銦錫及氧化銦鋅所組成之群中之至少一種。 An anisotropic conductive film as claimed in item 1 of the patent application, wherein the conductive material contains at least one selected from the group consisting of gold, silver, copper, indium tin oxide, and indium zinc oxide. 如申請專利範圍第1項之異向導電性膜,其中,上述樹脂膜之厚度方向與上述多個貫通孔之軸方向之間的角度為0~30°。 As for the anisotropic conductive film according to item 1 of the patent application range, the angle between the thickness direction of the resin film and the axial direction of the plurality of through holes is 0 to 30°. 如申請專利範圍第1項之異向導電性膜,其中,上述貫通孔具有圓柱形狀、圓錐台形狀、或2個圓錐台組合而成且將各自面積較小之側之底面連接之形狀。 An anisotropic conductive film as claimed in item 1 of the patent application, wherein the through hole has a cylindrical shape, a truncated cone shape, or a combination of two truncated cone shapes, and a shape that connects the bottom surfaces of the sides with smaller areas. 如申請專利範圍第1項之異向導電性膜,其中,上述樹脂膜之材料含有選自由聚對苯二甲酸乙二酯、聚碳酸酯、聚萘二甲酸乙二酯、聚醯亞胺及聚偏二氟乙烯所組成之群中之至少一種。 For example, the anisotropic conductive film according to item 1 of the patent application, wherein the material of the resin film contains a material selected from the group consisting of polyethylene terephthalate, polycarbonate, polyethylene naphthalate, polyimide and At least one of the groups consisting of polyvinylidene fluoride. 一種液晶顯示器用片材,其貼附於液晶顯示面板,該液晶顯示器用片材具有應與上述液晶顯示面板之導電部相接之表面、及應與對象材料相接之背面,且由申請專利範圍第1項之異向導電性膜所構成。 A sheet for liquid crystal display attached to a liquid crystal display panel, the sheet for liquid crystal display has a surface that should be in contact with the conductive portion of the liquid crystal display panel, and a back surface that should be in contact with the target material, and is patented The anisotropic conductive film of the first item in the range.
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