TW201922487A - Thin film metal foil with metal substrate, metal-coated transparent substrate material, laminate for see-through electrode, and see-through electrode material and device capable of effectively forming ultra-fine wiring with less transmission loss by photolithography - Google Patents

Thin film metal foil with metal substrate, metal-coated transparent substrate material, laminate for see-through electrode, and see-through electrode material and device capable of effectively forming ultra-fine wiring with less transmission loss by photolithography Download PDF

Info

Publication number
TW201922487A
TW201922487A TW107136767A TW107136767A TW201922487A TW 201922487 A TW201922487 A TW 201922487A TW 107136767 A TW107136767 A TW 107136767A TW 107136767 A TW107136767 A TW 107136767A TW 201922487 A TW201922487 A TW 201922487A
Authority
TW
Taiwan
Prior art keywords
metal foil
metal
thin film
less
layer
Prior art date
Application number
TW107136767A
Other languages
Chinese (zh)
Inventor
桑原真
Original Assignee
日商松下知識產權經營股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商松下知識產權經營股份有限公司 filed Critical 日商松下知識產權經營股份有限公司
Publication of TW201922487A publication Critical patent/TW201922487A/en

Links

Abstract

The present invention provides a thin film metal foil with metal substrate, which can effectively form ultra-fine wiring with less transmission loss by photolithography. The thin film metal foil with metal substrate is provided with a thin film metal foil, a release layer and a metal substrate. The thin film metal foil has a first main surface and a second main surface. The release layer is disposed on the first main surface and has conductivity. The metal substrate is disposed on the release layer. The first main surface of the thin film metal foil has fine concavities and convexities each of which has a ten-point average roughness (Rz) of 2.5 [mu]m or less, and the aspect ratio (Str) of the surface property of the first main surface is 0.5 or more and 1.0 or less.

Description

附金屬基材之薄膜金屬箔、覆金屬之透明基材材料、透視型電極用積層板、透視型電極素材及器件Thin film metal foil with metal substrate, transparent metal substrate material, laminated plate for see-through electrode, see-through electrode material and device

本發明涉及一種附金屬基材之薄膜金屬箔、覆金屬之透明基材材料、透視型電極用積層板、透視型電極素材及器件。The present invention relates to a film metal foil with a metal substrate, a metal-coated transparent substrate material, a laminate for a see-through electrode, a see-through electrode material, and a device.

發明背景
自以往,即廣泛使用在智慧型手機、輸入板、車載用導航機器、個人電腦、遊戲機、自動櫃員機、電視機等影像顯示裝置之前面配置有觸控面板模組的電子機器。影像顯示裝置具有在顯示區域可顯示影像的影像顯示功能。觸控面板模組則是與液晶顯示器等影像顯示裝置組合使用,作為感測在輸出影像之顯示區域被觸擊之位置的輸入裝置發揮功能。
BACKGROUND OF THE INVENTION Electronic devices in which a touch panel module is disposed in front of an image display device such as a smart phone, an input board, a car navigation device, a personal computer, a game machine, an automatic teller machine, or a television have been widely used. The image display device has an image display function capable of displaying an image in a display area. The touch panel module is used in combination with an image display device such as a liquid crystal display, and functions as an input device that senses a position where the display region of the output image is touched.

觸控面板模組具備觸控面板感測器及控制其之控制部。觸控面板感測器具備感測電極,用以呈現由X軸與Y軸構成之2維座標。感測電極係由多個X電極及與該X電極正交之多個Y電極構成。所述觸控面板感測器係將具備X電極之觸控面板感測器用構件與具備Y電極之觸控面板感測器用構件層疊而構成。以下,X電極或Y電極有時意指透視性電極。The touch panel module includes a touch panel sensor and a control unit for controlling the same. The touch panel sensor is provided with a sensing electrode for presenting a 2-dimensional coordinate composed of an X-axis and a Y-axis. The sensing electrode is composed of a plurality of X electrodes and a plurality of Y electrodes orthogonal to the X electrodes. The touch panel sensor is configured by laminating a member for a touch panel sensor including an X electrode and a member for a touch panel sensor having a Y electrode. Hereinafter, the X electrode or the Y electrode sometimes means a see-through electrode.

近年,不斷開發一種觸控面板感測器用構件,其具備業經微細化(以下稱為精細圖案化)的透視性電極,且感測感度高,可與高解析度影像顯示裝置組合使用。若以厚金屬層作為用以製作所述經精細圖案化之透視性電極的材料,會增加蝕刻至基材表面的蝕刻時間,導致透視性電極側壁之垂直性被破壞,當欲形成之透視性電極的線寬較窄時,還有斷線之虞。所以,精細圖案用途的金屬層厚度必須在9μm以下。In recent years, a member for a touch panel sensor has been developed, which is provided with a see-through electrode which is miniaturized (hereinafter referred to as fine patterning) and has high sensing sensitivity and can be used in combination with a high-resolution image display device. If a thick metal layer is used as the material for fabricating the finely patterned transparent electrode, the etching time to the surface of the substrate is increased, resulting in the verticality of the sidewall of the transparent electrode being broken, when the transparency is desired. When the line width of the electrode is narrow, there is also a flaw in the line. Therefore, the thickness of the metal layer for fine pattern use must be 9 μm or less.

就所述精細圖案用途之金屬層材料,專利文獻1中已揭示一種附載體之銅箔,其在有厚度之電解銅箔載體光面(製造時形成在電解滾筒側之表面)上依序具備中間層及極薄銅箔。中間層係構成為可將極薄銅層從載體剝離。此外,專利文獻1中就附載體之銅箔之製造方法揭示了以下方法:於電解槽中配置表面經研磨之電解滾筒及以預定電極間距離配置在電解滾筒周圍的電極,然後藉由將析出在旋轉中之電解滾筒表面上的銅剝下,可連續獲得厚度18μm之電解銅箔載體,再於所得電解銅箔載體之電解滾筒側的表面(光面)形成中間層,接著於該中間層上藉由電鍍形成極薄銅層。In the case of the metal layer material for the fine pattern use, Patent Document 1 discloses a copper foil with a carrier which is sequentially provided on the surface of the electrolytic copper foil carrier having a thickness (the surface formed on the side of the electrolytic drum at the time of manufacture) The middle layer and extremely thin copper foil. The intermediate layer is configured to peel the ultra-thin copper layer from the carrier. Further, in Patent Document 1, a method for producing a copper foil with a carrier discloses a method of disposing a surface-ground electrolytic drum in an electrolytic cell and an electrode disposed around the electrolytic drum at a predetermined electrode distance, and then depositing The copper strip on the surface of the rotating electrolytic drum is peeled off, and an electrolytic copper foil carrier having a thickness of 18 μm is continuously obtained, and an intermediate layer is formed on the surface (light surface) of the electrolytic drum side of the obtained electrolytic copper foil carrier, followed by the intermediate layer. An extremely thin copper layer is formed by electroplating.

先前技術文獻
專利文獻
專利文獻1:日本專利特開第2017-88961號公報
PRIOR ART DOCUMENT Patent Document Patent Document 1: Japanese Patent Laid-Open No. 2017-88961

發明概要
然而,若欲用如專利文獻1中記載之極薄銅箔,利用光刻法來製作線寬小於5μm之超微細配線,則配線有斷線之疑慮。且,一般而言,對配線流通交流電時,電流會因集膚效應(skin effect)而集中流至配線表面,因此一旦對用了如專利文獻1中記載之極薄銅箔般高低差大且截面長度很長之銅箔的配線流通高頻交流電,則傳輸損失有增大之虞。
SUMMARY OF THE INVENTION However, when an ultra-thin copper foil having a line width of less than 5 μm is formed by photolithography using an ultra-thin copper foil as described in Patent Document 1, the wiring has a problem of disconnection. In general, when the alternating current is distributed to the wiring, the current concentrates on the wiring surface due to the skin effect. Therefore, when the ultra-thin copper foil as described in Patent Document 1 is used, the height difference is large. When the wiring of the copper foil having a long cross-section has a high-frequency alternating current, the transmission loss is increased.

此處之高低差如圖13所示,意指將銅箔試料100以垂直平面進行裁切時,出現在其切口之截面曲線101之凹凸中相對於凸部之平均高度L3的最大頂高度Hp與最大底深度Hv之和(高低差=Hp+Hv)。如圖13所示,截面長度為截面曲線101之長度,且亦可以截面曲線101之長度L1相對於基準線102之長度L2之比表示作為表示上述高低差之指標之一。Here, the height difference is as shown in FIG. 13, which means that when the copper foil sample 100 is cut in a vertical plane, the maximum top height Hp of the unevenness of the section curve 101 of the slit relative to the average height L3 of the convex portion appears. The sum of the maximum bottom depth Hv (height difference = Hp + Hv). As shown in FIG. 13, the length of the section is the length of the section curve 101, and the ratio of the length L1 of the section curve 101 to the length L2 of the reference line 102 is also expressed as one of the indexes indicating the above-described height difference.

爰此,本發明目的在於提供:一種附金屬基材之薄膜金屬箔,其可利用光刻法有效形成傳輸損失少之超微細配線;覆金屬之透明基材材料、透視型電極用積層板、該等之製造方法、透視型電極素材及器件。Accordingly, an object of the present invention is to provide a thin film metal foil with a metal substrate which can effectively form ultrafine wiring with low transmission loss by photolithography, a transparent metal substrate material, a laminate for a see-through electrode, Such manufacturing methods, see-through electrode materials and devices.

第一發明之附金屬基材之薄膜金屬箔,具備:薄膜金屬箔,其具有第一主面及第二主面;剝離層,其設於前述第一主面上且具有導通性;及金屬基材,其設於前述剝離層上;前述薄膜金屬箔之第一主面具有十點平均粗度(Rz)為2.5μm以下之微細凹凸,且前述第一主面之表面性狀的長寬比(Str)為0.5以上且1.0以下。A film metal foil with a metal substrate according to a first aspect of the invention, comprising: a film metal foil having a first main surface and a second main surface; a peeling layer provided on the first main surface and having conductivity; and a metal a base material provided on the release layer; the first main surface of the thin film metal foil has fine concavities and convexities having a ten-point average roughness (Rz) of 2.5 μm or less, and an aspect ratio of a surface property of the first main surface (Str) is 0.5 or more and 1.0 or less.

第二發明之覆金屬之透明基材材料具備:透明基材;前述附金屬基材之薄膜金屬箔,其設在前述透明基材之單面或兩面;及透明接著層,其位在前述透明基材與前述薄膜金屬箔之間。The metal-coated transparent substrate material of the second invention comprises: a transparent substrate; the metal foil with the metal substrate described above, which is provided on one or both sides of the transparent substrate; and a transparent adhesive layer which is located in the transparent Between the substrate and the aforementioned thin film metal foil.

第三發明之透視型電極用積層板係將前述金屬基材及剝離層從前述覆金屬之透明基材材料剝離而成。In the laminated electrode for a see-through electrode according to a third aspect of the invention, the metal base material and the release layer are formed by peeling off the metal-coated transparent base material.

第四發明之透視型電極素材具備配線圖案層,該配線圖案層係前述透視型電極用積層板之前述薄膜金屬箔具有開口部者。The see-through electrode material according to the fourth aspect of the invention includes a wiring pattern layer in which the film metal foil of the multilayer electrode laminate has an opening.

第五發明之器件具備前述透視型電極素材及已和前述配線圖案層電連接之控制電路。A device according to a fifth aspect of the invention includes the above-described see-through electrode material and a control circuit that is electrically connected to the wiring pattern layer.

第六發明之透視型電極素材具備:透明基材;及配線圖案層,其形成在前述透明基材之單面或兩面且厚度0.1μm以上且5.0μm以下;前述配線圖案層係將隔著透明接著層而接合在前述透明基材上之薄膜金屬箔予以圖案化所形成者,並且,前述配線圖案層之表面的十點平均粗度(Rz)為2.5μm以下,且前述配線圖案層之前述表面的表面性狀之長寬比(Str)為0.5以上且1.0以下。A see-through electrode material according to a sixth aspect of the invention includes: a transparent substrate; and a wiring pattern layer formed on one surface or both surfaces of the transparent substrate and having a thickness of 0.1 μm or more and 5.0 μm or less; and the wiring pattern layer is transparent The thin film metal foil bonded to the transparent substrate is formed by patterning, and the ten-point average roughness (Rz) of the surface of the wiring pattern layer is 2.5 μm or less, and the aforementioned wiring pattern layer is formed. The aspect ratio (Str) of the surface property of the surface is 0.5 or more and 1.0 or less.

發明效果
根據本發明,可利用光刻法有效形成傳輸損失少的超微細配線。
Advantageous Effects of Invention According to the present invention, ultrafine wiring having a small transmission loss can be efficiently formed by photolithography.

用以實施發明之形態
以下說明本發明之實施形態。另,於相同構成要素有時會賦予相同符號並省略說明。
(1)附金屬基材之薄膜金屬箔
Embodiments for Carrying Out the Invention Hereinafter, embodiments of the present invention will be described. In the same manner, the same components will be denoted by the same reference numerals and will not be described.
(1) Film metal foil with metal substrate

如圖1A所示,本實施形態之附金屬基材之薄膜金屬箔10係具備薄膜金屬箔11、剝離層12、金屬基材13及降低反射層14的積層板。薄膜金屬箔11具有第一主面T11及第二主面B11。剝離層12及金屬基材13係依序設置在第一主面T11上。降低反射層14則設在第二主面B11上。As shown in FIG. 1A, the metal foil 10 with a metal substrate of the present embodiment includes a thin film metal foil 11, a peeling layer 12, a metal base material 13, and a laminated plate for lowering the reflective layer 14. The thin film metal foil 11 has a first main surface T11 and a second main surface B11. The peeling layer 12 and the metal base material 13 are sequentially disposed on the first main surface T11. The lower reflection layer 14 is provided on the second main surface B11.

在本實施形態中,薄膜金屬箔11之第一主面T11之表面性狀的長寬比(Str)為0.5以上且1.0以下,且薄膜金屬箔11之第一主面T11的十點平均粗度(Rz)為2.5μm以下。在此,Str係ISO25178中所規定之將表面之各向同性或各向異性之強度予以定量化後的三維表面性狀參數,取0以上且1以下之值。Str近於1時,其表面會展現明顯的各向同性。Str近於0時,其表面會展現明顯的各向異性。在此,各向同性意指於表面凹凸不見規則的方向性,亦即表面上無紋理等之意。各向異性意指於表面凹凸可見規則的方向性,亦即表面上有紋理等之意。Rz意指JIS B0601(1994)中規定之十點平均粗度。In the present embodiment, the aspect ratio (Str) of the surface property of the first main surface T11 of the thin film metal foil 11 is 0.5 or more and 1.0 or less, and the tenth point average roughness of the first main surface T11 of the thin film metal foil 11 is obtained. (Rz) is 2.5 μm or less. Here, the three-dimensional surface property parameter which quantifies the intensity of the isotropic or anisotropy of the surface defined by Str ISO 25178 is a value of 0 or more and 1 or less. When Str is near 1, its surface will show obvious isotropy. When Str is near 0, its surface will show obvious anisotropy. Here, isotropic means that the surface unevenness does not have a regular directionality, that is, no texture or the like on the surface. Anisotropy means that the surface irregularities are visible in the directionality, that is, the texture on the surface. Rz means the ten point average roughness specified in JIS B0601 (1994).

即,在本實施形態中,薄膜金屬箔11之第一主面T11一致為少有突出之凸部(山)或凹部(谷)的平滑面(以下稱高平滑面)。比起使用習知之極薄銅箔的配線,使用所述薄膜金屬箔11的配線之傳輸損失更小,當流向配線之交流電流頻率很高時,其效果尤為顯著。吾人推測,使用薄膜金屬箔11的配線之第一主面T11的截面長度比習知之極薄銅箔更短,因此即使因集膚效應使交流電流沿著配線之表面形狀流動,由於交流電流流動之距離比以往更短,所以訊號之傳輸損失會變得較小。而且,即使欲以光刻處理於具有高平滑的第一主面T11之薄膜金屬箔11上形成配線時,也比以往更能抑制斷線的發生情況,故可有效率地形成超微細配線。吾人推測,其主要因素如下:與使用習知之極薄銅箔的情況相比,於薄膜金屬箔11之第一主面T11上形成光阻膜並進行曝光形成預定的配線圖案狀時,穿透光阻層的曝光不易在第一主面T11漫反射,從而可形成具有期望之開口形狀的光阻層;以及,對薄膜金屬箔11施行光刻處理時,不易發生蝕刻液沿著銅箔表面之具有方向性之凹凸擴散的狀況,因此蝕刻反應容易沿薄膜金屬箔11之厚度方向進行。在此,超微細配線係線寬低於10μm之配線,宜為0.1μm以上且10μm以下,較宜為0.5μm以上且4.0μm以下,更宜為1.0μm以上且3.0μm以下。在本實施形態中,以Str來規定薄膜金屬箔11之第一主面T11的表面性狀,是為了可更正確地掌握以下事項:傳輸損失的情況是否比以往規定使用Rz、算術平均粗度(Ra)等作為表面性狀之評估指標來得更少;以及,是否可利用光刻法有效率地形成超微細配線。在此,Ra意指JIS B0601(1994)中規定之算術平均粗度。In other words, in the present embodiment, the first main surface T11 of the thin film metal foil 11 is a smooth surface (hereinafter referred to as a high smooth surface) having a convex portion (mountain) or a concave portion (valley) which is less likely to protrude. The wiring using the thin film metal foil 11 has a smaller transmission loss than the wiring using the conventional ultra-thin copper foil, and the effect is particularly remarkable when the frequency of the alternating current flowing to the wiring is high. It is presumed that the cross-sectional length of the first main surface T11 of the wiring using the thin film metal foil 11 is shorter than that of the conventional ultra-thin copper foil, and therefore the alternating current flows due to the alternating current flowing along the surface shape of the wiring due to the skin effect. The distance is shorter than ever, so the transmission loss of the signal will become smaller. Further, even when wiring is formed on the thin film metal foil 11 having the first main surface T11 having high smoothness by photolithography, the occurrence of disconnection can be suppressed more than in the past, so that ultrafine wiring can be efficiently formed. It is presumed that the main factor is as follows: when a photoresist film is formed on the first main surface T11 of the thin film metal foil 11 and exposed to form a predetermined wiring pattern, the penetration is performed as compared with the case of using a conventional ultra-thin copper foil. The exposure of the photoresist layer is not easily diffused and reflected on the first main surface T11, so that a photoresist layer having a desired opening shape can be formed; and when the thin film metal foil 11 is subjected to photolithography, the etching liquid is less likely to occur along the surface of the copper foil. Since the directional unevenness is diffused, the etching reaction easily proceeds in the thickness direction of the thin film metal foil 11. Here, the wiring having an ultrafine wiring line width of less than 10 μm is preferably 0.1 μm or more and 10 μm or less, more preferably 0.5 μm or more and 4.0 μm or less, and more preferably 1.0 μm or more and 3.0 μm or less. In the present embodiment, the surface property of the first main surface T11 of the thin film metal foil 11 is defined by Str in order to more accurately grasp whether or not the transmission loss is higher than the conventional Rz and the arithmetic mean roughness ( Ra) or the like is less as an evaluation index of surface properties; and whether or not ultrafine wiring can be efficiently formed by photolithography. Here, Ra means the arithmetic mean roughness specified in JIS B0601 (1994).

在本實施形態中,附金屬基材之薄膜金屬箔10具備降低反射層14,惟本發明不受此限,附金屬基材之薄膜金屬箔10亦可不具備降低反射層14。
(1.1)薄膜金屬箔
In the present embodiment, the film metal foil 10 with a metal base material is provided with the reflection-reducing layer 14, but the present invention is not limited thereto, and the film metal foil 10 to which the metal substrate is attached may not have the reflection-reducing layer 14.
(1.1) Thin film metal foil

薄膜金屬箔11適合作為譬如觸控面板感測器、電磁波吸收板材或車載用天線、印刷配線板等電極材料使用。The thin film metal foil 11 is suitable for use as an electrode material such as a touch panel sensor, an electromagnetic wave absorbing plate, an in-vehicle antenna, or a printed wiring board.

薄膜金屬箔11之第一主面T11的Str為0.5以上且1.0以下,且宜為0.55以上且1.0以下,較宜為0.6以上且1.0以下。薄膜金屬箔11之第一主面T11的Rz為2.5μm以下,宜為0.01μm以上且2.0μm以下,較宜為0.01μm以上且1.8μm以下。使用薄膜金屬箔11之第一主面T11的Str低於0.5及Rz超過2.5μm之薄膜金屬箔11而形成超微細配線時,基於上述理由,超微細配線有容易斷線、所形成之超微細配線的傳輸損失大增之疑慮。The Str of the first main surface T11 of the thin film metal foil 11 is 0.5 or more and 1.0 or less, and preferably 0.55 or more and 1.0 or less, and more preferably 0.6 or more and 1.0 or less. The Rz of the first main surface T11 of the thin film metal foil 11 is 2.5 μm or less, preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.01 μm or more and 1.8 μm or less. When the ultrafine wiring is formed by using the thin film metal foil 11 in which the Str of the first main surface T11 of the thin film metal foil 11 is less than 0.5 and the Rz exceeds 2.5 μm, the ultrafine wiring is easily broken and the ultrafine layer is formed. The transmission loss of wiring is greatly increased.

薄膜金屬箔11之厚度宜為0.1μm以上且5.0μm以下,較宜為0.5μm以上且3.0μm以下。薄膜金屬箔11之厚度只要在上述範圍內,就更容易利用光刻法形成超微細配線。The thickness of the thin film metal foil 11 is preferably 0.1 μm or more and 5.0 μm or less, and more preferably 0.5 μm or more and 3.0 μm or less. When the thickness of the thin film metal foil 11 is within the above range, it is easier to form ultrafine wiring by photolithography.

薄膜金屬箔11之第一主面T11如前述為高平滑面,但仍具有Rz為2.5μm以下之微細凹凸。該微細凹凸之高低差宜為2.3μm以下,且1.9μm以下較佳,1.7μm以下更佳。薄膜金屬11之第一主面T11的截面長度宜相對於基準線長度在1.10倍以下。使用所述薄膜金屬箔11形成的超微細配線具有尤其在流通高頻交流電流時減少傳輸損失的優點。The first main surface T11 of the thin film metal foil 11 has a high smooth surface as described above, but still has fine irregularities having an Rz of 2.5 μm or less. The height difference of the fine unevenness is preferably 2.3 μm or less, more preferably 1.9 μm or less, and still more preferably 1.7 μm or less. The cross-sectional length of the first main surface T11 of the film metal 11 is preferably 1.10 times or less with respect to the length of the reference line. The ultrafine wiring formed using the thin film metal foil 11 has an advantage of reducing transmission loss particularly when a high frequency alternating current flows.

構成薄膜金屬箔11之材質宜含有譬如選自於由銅、鎳、鋁及銀所構成群組中之至少1種。其中,構成薄膜金屬箔11之材質又宜以銅為主成分,且薄膜金屬箔11宜含有相對於薄膜金屬箔11之總質量為80質量%以上之銅,較宜含有85質量%以上,更宜含有90質量%以上。薄膜金屬箔11之尺寸則因應附金屬基材之薄膜金屬箔10的用途等適宜調整即可。The material constituting the thin film metal foil 11 preferably contains, for example, at least one selected from the group consisting of copper, nickel, aluminum, and silver. In particular, the material of the film metal foil 11 is preferably composed of copper as a main component, and the film metal foil 11 preferably contains 80% by mass or more of copper based on the total mass of the film metal foil 11, and more preferably contains 85% by mass or more. It should preferably contain 90% by mass or more. The size of the film metal foil 11 may be appropriately adjusted depending on the use of the film metal foil 10 to which the metal substrate is attached.

在本實施形態中,在薄膜金屬箔11之第一主面T11上直接形成有剝離層12,且在第二主面B11上直接形成有降低反射層14,不過,譬如亦可在第一主面T11與剝離層12之間、及第二主面B11與降低反射層14之間形成有防鏽處理層、矽烷耦合處理層等。若形成有防鏽處理層,即可防止薄膜金屬箔11變色(腐蝕)。若形成有矽烷耦合處理層,在後述之覆金屬之透明基材材料20中即可提升薄膜金屬箔與透明接著層之接著強度。構成防鏽處理層之材質譬如可使用鋅鍍料、鋅合金鍍料、錫鍍料、錫合金鍍料、鎳鍍料、鉻酸鹽等。防鏽處理層之厚度宜為0.001μm以上且0.50μm以下。構成矽烷耦合處理層之矽烷耦合劑可使用譬如3-(2-胺乙基)胺丙基三甲氧矽烷、3-環氧丙氧基丙基三甲氧矽烷、3-胺丙基三乙氧矽烷、3-巰丙基三甲氧矽烷或3-苯基胺丙基三甲氧矽烷等。矽烷耦合處理層之厚度宜為0.001μm以上且0.50μm以下。
(1.2)剝離層
In the present embodiment, the peeling layer 12 is directly formed on the first main surface T11 of the thin film metal foil 11, and the reflection reducing layer 14 is directly formed on the second main surface B11, but, for example, may also be in the first main A rust-preventing treatment layer, a decane coupling treatment layer, and the like are formed between the surface T11 and the peeling layer 12 and between the second main surface B11 and the reflection-reducing layer 14. When the rust-preventing treatment layer is formed, the film metal foil 11 can be prevented from being discolored (corroded). When the decane coupling treatment layer is formed, the adhesion strength between the thin film metal foil and the transparent adhesive layer can be improved in the metal-coated transparent base material 20 described later. As the material constituting the rust-preventing treatment layer, for example, a zinc plating material, a zinc alloy plating material, a tin plating material, a tin alloy plating material, a nickel plating material, a chromate or the like can be used. The thickness of the rust-preventing treatment layer is preferably 0.001 μm or more and 0.50 μm or less. The decane coupling agent constituting the decane coupling treatment layer may be, for example, 3-(2-aminoethyl)aminopropyltrimethoxy decane, 3-glycidoxypropyltrimethoxy decane or 3-aminopropyltriethoxy decane. , 3-mercaptopropyltrimethoxydecane or 3-phenylaminopropyltrimethoxydecane. The thickness of the decane coupling treatment layer is preferably 0.001 μm or more and 0.50 μm or less.
(1.2) peeling layer

剝離層12主要具有可輕易從附金屬基材之薄膜金屬箔10剝離金屬基材13的效果。剝離層12具有第一主面T12及第二主面B12,且其覆蓋薄膜金屬箔11之第一主面T11整面。剝離層12之第一主面T12及第二主面B12的Str為0.5以上且1.0以下,宜為0.55以上且1.0以下,較宜為0.6以上且1.0以下。剝離層12之第一主面T12及第二主面B12的Rz為2.5μm以下,宜為0.01μm以上且2.0μm以下,較宜為0.01μm以上且1.8μm以下。構成剝離層12之金屬厚度宜為0.001μm以上且0.50μm以下。剝離層12之厚度只要在上述範圍內,剝離層12之第一主面T12及第二主面B12的表面性狀就會跟隨金屬基材13之第二主面B13的表面性狀,因此剝離層12之第一主面T12及第二主面B12的表面性狀與金屬基材13之第二主面B13的表面性狀可評估為相同。剝離層12之厚度可利用重量法求算。構成剝離層12之材質可舉如鎳、鉬、鉻、鐵、鈦、鎢、磷之單種或多種所構成的合金或氧化物等。藉此,剝離層12會具有導通性,而可利用電鍍,於剝離層12上形成薄膜金屬箔11。以剝離層12之第一主面T12側主要由合金構成且第二主面B12側主要由氧化物構成的剝離層為宜。藉此,金屬基材13可隨剝離層12一起從附金屬基材之薄膜金屬箔10剝離,且剝離層12可從薄膜金屬箔11剝離。
(1.3)金屬基材
The release layer 12 mainly has an effect of easily peeling the metal substrate 13 from the film metal foil 10 to which the metal substrate is attached. The peeling layer 12 has a first major surface T12 and a second major surface B12, and covers the entire surface of the first major surface T11 of the thin film metal foil 11. Str of the first main surface T12 and the second main surface B12 of the peeling layer 12 is 0.5 or more and 1.0 or less, preferably 0.55 or more and 1.0 or less, and more preferably 0.6 or more and 1.0 or less. The Rz of the first main surface T12 and the second main surface B12 of the peeling layer 12 is 2.5 μm or less, preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.01 μm or more and 1.8 μm or less. The thickness of the metal constituting the peeling layer 12 is preferably 0.001 μm or more and 0.50 μm or less. When the thickness of the peeling layer 12 is within the above range, the surface properties of the first main surface T12 and the second main surface B12 of the peeling layer 12 follow the surface property of the second main surface B13 of the metal base material 13, and thus the peeling layer 12 is removed. The surface properties of the first main surface T12 and the second main surface B12 and the surface properties of the second main surface B13 of the metal base material 13 can be evaluated to be the same. The thickness of the peeling layer 12 can be calculated by a gravimetric method. The material constituting the peeling layer 12 may be an alloy or an oxide composed of a single or a plurality of kinds of nickel, molybdenum, chromium, iron, titanium, tungsten, or phosphorus. Thereby, the peeling layer 12 has conductivity, and the thin film metal foil 11 can be formed on the peeling layer 12 by electroplating. It is preferable that the first main surface T12 side of the peeling layer 12 is mainly composed of an alloy and the second main surface B12 side is mainly composed of an oxide layer. Thereby, the metal substrate 13 can be peeled off from the film metal foil 10 attached to the metal substrate together with the peeling layer 12, and the peeling layer 12 can be peeled off from the film metal foil 11.
(1.3) Metal substrate

金屬基材13的厚度薄,能作為機械強度低之薄膜金屬箔11的補強材(載體)發揮功能。金屬基材13具有第一主面T13及第二主面B13,且其覆蓋在剝離層12之第一主面T12整面上。金屬基材13之厚度只要是具有能作為薄膜金屬箔11之載體發揮功能之機械強度的厚度即無特別限定,宜為7μm以上且40μm以下,較宜為7μm以上且36μm以下,更宜為10μm以上且20μm以下。金屬基材13之厚度可利用重量法求算。The metal base material 13 has a small thickness and can function as a reinforcing material (carrier) of the film metal foil 11 having low mechanical strength. The metal base material 13 has a first main surface T13 and a second main surface B13, and covers the entire surface of the first main surface T12 of the peeling layer 12. The thickness of the metal base material 13 is not particularly limited as long as it has a mechanical strength capable of functioning as a carrier of the thin film metal foil 11, and is preferably 7 μm or more and 40 μm or less, more preferably 7 μm or more and 36 μm or less, and more preferably 10 μm. Above and below 20 μm. The thickness of the metal substrate 13 can be calculated by a gravimetric method.

構成金屬基材13之材質宜含有譬如選自於由銅、鎳、鋁、鎂、鎢、鉬、鉑、金及鈀所構成群組中之1種(以下稱為成分A)。此外,成分A之含量宜相對於金屬基材13之總質量含有80質量%以上,且較宜含有85質量%以上,更宜含有90質量%以上。基於成本觀點,宜使用銅。使用銅之金屬基材13,譬如可使用電解銅箔、電解銅合金箔、軋延銅箔、軋延銅合金箔等。如後述之附金屬基材之薄膜金屬箔的製造方法中所示,薄膜金屬箔11之第一主面T11的表面性狀隔著剝離層12受金屬基材13之第二主面B13的表面性狀影響,因此金屬基材13之第二主面B13的Str為0.5以上且1.0以下,且宜為0.55以上且1.0以下,較宜為0.6以上且1.0以下。金屬基材13之第二主面B13的Rz為2.5μm以下,且宜為0.01μm以上且2.0μm以下,較宜為0.01μm以上且1.8μm以下。
(1.4)降低反射層
The material constituting the metal base material 13 preferably contains, for example, one selected from the group consisting of copper, nickel, aluminum, magnesium, tungsten, molybdenum, platinum, gold, and palladium (hereinafter referred to as component A). In addition, the content of the component A is preferably 80% by mass or more, and more preferably 85% by mass or more, and more preferably 90% by mass or more based on the total mass of the metal base material 13. Based on the cost perspective, copper should be used. As the metal base material 13 for copper, for example, an electrolytic copper foil, an electrolytic copper alloy foil, a rolled copper foil, a rolled copper alloy foil, or the like can be used. The surface property of the first main surface T11 of the thin film metal foil 11 is subjected to the surface property of the second main surface B13 of the metal base material 13 via the peeling layer 12, as shown in the method for producing a thin metal foil with a metal substrate, which will be described later. Since the influence on the second main surface B13 of the metal base material 13 is 0.5 or more and 1.0 or less, and preferably 0.55 or more and 1.0 or less, it is preferably 0.6 or more and 1.0 or less. The Rz of the second main surface B13 of the metal base material 13 is 2.5 μm or less, and preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.01 μm or more and 1.8 μm or less.
(1.4) Lowering the reflective layer

降低反射層14在圖2B所示之透視型電極素材40中係第一降低反射圖案層41A及第二降低反射圖案層41B(以下有時會稱作降低反射圖案層41A、41B)之材料。The reflection-reducing layer 14 is a material of the first reflection-reducing pattern layer 41A and the second reflection-reducing pattern layer 41B (hereinafter sometimes referred to as a reflection-reducing pattern layer 41A, 41B) in the see-through electrode material 40 shown in FIG. 2B.

降低反射層14具有第一主面T14及第二主面B14。降低反射層14在圖2A所示形態中係覆蓋透明接著層22A之第二主面B14整面,而在圖2B所示形態中,降低反射層14相當於降低反射圖案層41,並未覆蓋透明接著層22A之第二主面B14整面。降低反射層14之厚度宜為0.001μm以上且0.50μm以下,較宜為0.01μm以上且0.30μm以下。降低反射層14之厚度只要在上述範圍內,降低反射層14之第一主面T14及第二主面B14的表面性狀就會跟隨薄膜金屬箔11之第二主面B11的表面性狀,因此可形成降低反射層14之第一主面T14及第二主面B14的表面性狀與薄膜金屬箔11之第二主面B11的表面性狀略同的降低反射層。降低反射層14之厚度可利用重量法求算。The lower reflection layer 14 has a first main surface T14 and a second main surface B14. The lower reflection layer 14 covers the entire surface of the second main surface B14 of the transparent adhesive layer 22A in the embodiment shown in FIG. 2A, and in the embodiment shown in FIG. 2B, the lower reflection layer 14 corresponds to the lower reflection pattern layer 41, which is not covered. The second main surface B14 of the transparent adhesive layer 22A is entirely flat. The thickness of the reflection-reducing layer 14 is preferably 0.001 μm or more and 0.50 μm or less, and more preferably 0.01 μm or more and 0.30 μm or less. When the thickness of the reflective layer 14 is lowered within the above range, reducing the surface properties of the first main surface T14 and the second main surface B14 of the reflective layer 14 follows the surface property of the second main surface B11 of the thin film metal foil 11, thereby The surface of the first main surface T14 and the second main surface B14 of the reflection reducing layer 14 is formed to have a surface property similar to that of the second main surface B11 of the thin film metal foil 11 . Reducing the thickness of the reflective layer 14 can be calculated by the gravimetric method.

構成降低反射層14之材質可使用譬如銅、鎳、鈷、鎢或鋁等之金屬等,更可含有硫等。構成降低反射層14之材質只要為金屬,在圖2B所示之透視型電極素材40中,即可降低第一配線圖案層42A及第二配線圖案層42B(以下有時會稱作配線圖案層42A、42B)的配線電阻。其中,降低反射層14宜以每單位面積0.1%以上且10.0%以下之含有率含有選自於由硫、鎳、鈷、鎢及鋁所構成群組中之至少1種以上。藉此,可抑制薄膜金屬箔11之表面特徵之在波長550nm以上且780nm以下的高反射率,而得以在380nm以上且780nm以下之範圍內取得平均的反射率。所以,在透視型電極素材40中可抑制配線圖案層42A、42B表面的閃光,而將透視型電極素材40用於液晶顯示器等時,可抑制畫面對比變小的情況。此時,硫含有率宜為10%以內。硫含有率只要在上述範圍內,配線圖案層42A、42B本身的電阻值就不容易增高。另,每單位面積之含有率係利用市售之能量分散型X射線分光器(EDS)或市售之波長分散型X射線分光器(WDS)所附解析裝置(利用電腦的繪圖結果)進行解析所得之值(重量%)。The material constituting the reflection-reducing layer 14 may be a metal such as copper, nickel, cobalt, tungsten or aluminum, or the like, and may further contain sulfur or the like. The material constituting the reflection-reducing layer 14 is a metal, and in the see-through electrode material 40 shown in FIG. 2B, the first wiring pattern layer 42A and the second wiring pattern layer 42B can be lowered (hereinafter sometimes referred to as a wiring pattern layer). Wiring resistance of 42A, 42B). In particular, the reflection-reducing layer 14 preferably contains at least one selected from the group consisting of sulfur, nickel, cobalt, tungsten, and aluminum at a content ratio of 0.1% or more and 10.0% or less per unit area. Thereby, the high reflectance of the surface characteristics of the thin film metal foil 11 at a wavelength of 550 nm or more and 780 nm or less can be suppressed, and the average reflectance can be obtained in the range of 380 nm or more and 780 nm or less. Therefore, in the see-through electrode material 40, the flash of the surface of the wiring pattern layers 42A and 42B can be suppressed, and when the see-through electrode material 40 is used for a liquid crystal display or the like, the contrast of the screen can be suppressed from being small. At this time, the sulfur content is preferably within 10%. When the sulfur content is within the above range, the resistance values of the wiring pattern layers 42A and 42B themselves are not easily increased. In addition, the content per unit area is analyzed by a commercially available energy dispersive X-ray spectroscope (EDS) or a commercially available wavelength dispersive X-ray spectroscope (WDS) attached analysis device (using a computer drawing result) The value obtained (% by weight).

降低反射層14在可見光區域(380nm以上且780nm以下)中的光反射率宜為20%以下,較宜為15%以下,更宜為10%以下,尤宜為5%以下。可見光區域中的光反射率係利用遵照「JIS K 7375之塑膠-全光線透射率及全光線反射率的求算法」之方法測得之值。
(2)覆金屬之透明基材材料
The light reflectance of the reflection-reducing layer 14 in the visible light region (380 nm or more and 780 nm or less) is preferably 20% or less, more preferably 15% or less, more preferably 10% or less, and particularly preferably 5% or less. The light reflectance in the visible light region is a value measured by a method in accordance with "JIS K 7375 Plastic - Total Light Transmittance and Total Light Reflectance".
(2) Metal-coated transparent substrate material

如圖1B所示,本實施形態之覆金屬之透明基材材料20具備透明基材21、第一透明接著層22A、第一附金屬基材之薄膜金屬箔10A、第二透明接著層22B及第二附金屬基材之薄膜金屬箔10B。透明基材21具有第一主面T21及第二主面B21。第一透明接著層22A及第一附金屬基材之薄膜金屬箔10A係依序積層在透明基材21之第一主面T21上。且第二透明接著層22B及第二附金屬基材之薄膜金屬箔10B係依序積層在透明基材21之第二主面B21上。第一附金屬基材之薄膜金屬箔10A與第二附金屬基材之薄膜金屬箔10B和附金屬基材之薄膜金屬箔10為相同構成。以下,第一透明接著層22A及第二透明接著層22B有時會稱作透明接著層22A、22B。在本實施形態中,覆金屬之透明基材材料20具備第一附金屬基材之薄膜金屬箔10A及第二附金屬基材之薄膜金屬箔10B,惟本發明不受此限,覆金屬之透明基材材料20亦可僅具備第一附金屬基材之薄膜金屬箔10A。
(2.1)透明基材
As shown in FIG. 1B, the metal-coated transparent substrate material 20 of the present embodiment includes a transparent substrate 21, a first transparent adhesive layer 22A, a first metal-clad metal foil 10A, and a second transparent adhesive layer 22B. The second film metal foil 10B with a metal substrate. The transparent substrate 21 has a first main surface T21 and a second main surface B21. The first transparent adhesive layer 22A and the first metal foil-attached metal foil 10A are sequentially laminated on the first main surface T21 of the transparent substrate 21. The second transparent adhesive layer 22B and the second metal foil-attached metal foil 10B are sequentially laminated on the second main surface B21 of the transparent substrate 21. The film metal foil 10A of the first metal substrate and the film metal foil 10B of the second metal substrate and the film metal foil 10 with the metal substrate have the same configuration. Hereinafter, the first transparent adhesive layer 22A and the second transparent adhesive layer 22B may be referred to as transparent adhesive layers 22A and 22B. In the present embodiment, the metal-coated transparent substrate material 20 includes the first metal-attached metal foil 10A and the second metal-coated thin-film metal foil 10B, but the invention is not limited thereto, and the metal is covered. The transparent substrate material 20 may also have only the film metal foil 10A of the first metal-attached substrate.
(2.1) Transparent substrate

透明基材21為板狀。透明基材21之厚度因應覆金屬之透明基材材料20的用途等適宜選擇即可,宜為24μm以上且300μm以下,較宜為35μm以上且260μm以下。透明基材21的厚度若在上述範圍內,便不易產生皺痕,並且易操作且透明性佳。構成透明基材21之材質可使用譬如聚對苯二甲酸乙二酯(PET)、聚萘二甲酸乙二酯(PEN)、聚碳酸酯(PC)或聚甲基丙烯酸甲酯(PMMA)等透明樹脂。透明基材21亦可含有四溴雙酚A等添加型、反應型的阻燃劑。The transparent substrate 21 has a plate shape. The thickness of the transparent substrate 21 may be appropriately selected depending on the use of the metal-coated transparent substrate material 20, and is preferably 24 μm or more and 300 μm or less, and more preferably 35 μm or more and 260 μm or less. When the thickness of the transparent substrate 21 is within the above range, wrinkles are less likely to occur, and it is easy to handle and has good transparency. The material constituting the transparent substrate 21 may be, for example, polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC) or polymethyl methacrylate (PMMA). Transparent resin. The transparent substrate 21 may contain an additive type or reactive flame retardant such as tetrabromobisphenol A.

又,作為上述以外之材質,亦可使用含環烯烴之透明樹脂,或可使用含有可在做成薄膜時使其強勁延伸而提高結晶性來提高雙折射率之聚酯的透明樹脂。尤其,使用具有包含延遲值譬如為100nm以下之環烯烴薄膜之透明基材的覆金屬之透明基材材料所製得的透視型電極素材,或是使用具有包含延遲值譬如為3000nm以上之聚酯薄膜之透明基材的覆金屬之透明基材材料所製得的透視型電極素材,如後述皆具有可減低虹斑或黑視(blackout)等現象之優點。
(2.2)透明接著層
Moreover, as a material other than the above, a transparent resin containing a cycloolefin may be used, or a transparent resin containing a polyester which can be strongly stretched when formed into a film to improve crystallinity and increase birefringence can be used. In particular, a see-through electrode material obtained by using a metal-coated transparent substrate material having a transparent substrate having a retardation value of, for example, a cycloolefin film of 100 nm or less, or a polyester having a retardation value of, for example, 3000 nm or more is used. The see-through electrode material obtained by the metal-coated transparent substrate material of the transparent substrate of the film has the advantages of reducing the phenomenon of rainbow spots or blackout, as will be described later.
(2.2) Transparent adhesive layer

第一透明接著層22A係將第一附金屬基材之薄膜金屬箔10A固定在透明基材21之第一主面T21上。第二透明接著層22B係將第二附金屬基材之薄膜金屬箔10B固定在透明基材21之第二主面B21上。第一透明接著層22A與第二透明接著層22B可為相同構成,亦可為互異構成。The first transparent adhesive layer 22A fixes the thin metal foil 10A of the first metal-attached substrate on the first main surface T21 of the transparent substrate 21. The second transparent adhesive layer 22B fixes the film metal foil 10B of the second metal substrate to the second main surface B21 of the transparent substrate 21. The first transparent adhesive layer 22A and the second transparent adhesive layer 22B may have the same configuration or may be mutually different.

透明接著層22A、22B為透明接著劑之硬化物。構成透明接著劑之材質宜包含譬如丙烯酸樹脂、環氧樹脂、胺甲酸乙酯樹脂或該等之混合樹脂。尤其,丙烯酸樹脂、胺甲酸乙酯樹脂或該等混合樹脂有優異的透明性,光學上亦相當有用。The transparent adhesive layers 22A, 22B are cured of a transparent adhesive. The material constituting the transparent adhesive preferably contains, for example, an acrylic resin, an epoxy resin, an urethane resin, or a mixed resin thereof. In particular, acrylic resins, urethane resins, or such mixed resins have excellent transparency and are also optically useful.

透明接著層22A、22B之硬度宜為1.0N/mm2 以上且200N/mm2 以下,較宜為4.0N/mm2 以上且175N/mm2 以下。透明接著層22A、22B之硬度只要在上述範圍內,即可抑制斷線原因之一的黏著材伸長。在此,透明接著層22A、22B之硬度係利用奈米壓痕裝置測得之值。透明接著層22A、22B之厚度宜為0.5μm以上且10.00μm以下,較宜為1.0μm以上且8.00μm以下。
(3)透視型電極用積層板
A transparent adhesive layer 22A, 22B should be of a hardness of 1.0N / mm 2 or more and 200N / mm 2 or less, more appropriate to 4.0N / mm 2 or more and 175N / mm 2 or less. When the hardness of the transparent adhesive layers 22A and 22B is within the above range, the elongation of the adhesive which is one of the causes of the disconnection can be suppressed. Here, the hardness of the transparent adhesive layers 22A and 22B is a value measured by a nanoindentation device. The thickness of the transparent adhesive layers 22A and 22B is preferably 0.5 μm or more and 10.00 μm or less, and more preferably 1.0 μm or more and 8.00 μm or less.
(3) laminated plate for see-through electrode

本實施形態之透視型電極用積層板30係從覆金屬之透明基材材料20剝離第一金屬基材13A、第一剝離層12A、第二金屬基材13B及第二剝離層12B而成。即,如圖2A所示,透視型電極用積層板30具備透明基材21、第一透明接著層22A、第一降低反射層14A、第一薄膜金屬箔11A、第二透明接著層22B、第二降低反射層14B及第二薄膜金屬箔11B。第一透明接著層22A、第一降低反射層14A及第一薄膜金屬箔11A係依序積層在透明基材21之第一主面T21上。第二透明接著層22B、第二降低反射層14B及第二薄膜金屬箔11B係依序積層在透明基材21之第二主面B21上。
(4)透視型電極素材
The laminated electrode laminate board 30 of the present embodiment is obtained by peeling the first metal base material 13A, the first peeling layer 12A, the second metal base material 13B, and the second peeling layer 12B from the metal-coated transparent base material 20. That is, as shown in FIG. 2A, the transparent electrode substrate 30 includes a transparent substrate 21, a first transparent adhesive layer 22A, a first reduced reflection layer 14A, a first thin film metal foil 11A, and a second transparent adhesive layer 22B. Second, the reflective layer 14B and the second thin film metal foil 11B are lowered. The first transparent adhesive layer 22A, the first light-reducing reflective layer 14A, and the first thin film metal foil 11A are sequentially laminated on the first main surface T21 of the transparent substrate 21. The second transparent adhesive layer 22B, the second reduced reflection layer 14B, and the second thin film metal foil 11B are sequentially laminated on the second main surface B21 of the transparent substrate 21.
(4) see-through electrode material

本實施形態之透視型電極素材40具備:第一配線圖案層42A,其係透視型電極用積層板30之第一薄膜金屬箔11A具有第一開口部A40A者;及第二配線圖案層42B,其係第二薄膜金屬箔11B具有第二開口部A40B者。即,如圖2B所示,透視型電極素材40具備透明基材21、第一透明接著層22A、第一降低反射圖案層41A、第一配線圖案層42A、第二透明接著層22B、第二降低反射圖案層41B及第二配線圖案層42B。第一透明接著層22A、第一降低反射圖案層41A及第一配線圖案層42A係依序積層在透明基材21之第一主面T21上。第二透明接著層22B、第二降低反射圖案層41B及第二配線圖案層42B係依序積層在透明基材21之第二主面B21上。The see-through electrode material 40 of the present embodiment includes a first wiring pattern layer 42A, and the first thin film metal foil 11A of the laminated electrode laminated board 30 has a first opening portion A40A and a second wiring pattern layer 42B. The second thin film metal foil 11B has the second opening portion A40B. That is, as shown in FIG. 2B, the see-through electrode material 40 includes a transparent substrate 21, a first transparent adhesive layer 22A, a first reduced reflection pattern layer 41A, a first wiring pattern layer 42A, a second transparent adhesive layer 22B, and a second. The reflective pattern layer 41B and the second wiring pattern layer 42B are lowered. The first transparent adhesive layer 22A, the first reduced reflection pattern layer 41A, and the first wiring pattern layer 42A are sequentially laminated on the first main surface T21 of the transparent substrate 21. The second transparent adhesive layer 22B, the second reduced reflection pattern layer 41B, and the second wiring pattern layer 42B are sequentially laminated on the second main surface B21 of the transparent substrate 21.

透視型電極素材40所具備的降低反射圖案層41A可以大幅降低從第二外表部A22B(以下有時會稱為A22B)入射之光穿透透明接著層及透明基材而在第一配線圖案層42A之第二主面B42附近散射的情況。關於降低反射圖案層41B亦同樣地可大幅降低從第一外表部A22A(以下有時會稱為A22A)入射之光在第二配線圖案層42B之第二主面B42附近散射的情況。The reduced reflection pattern layer 41A provided in the see-through electrode material 40 can greatly reduce the light incident from the second outer surface portion A22B (hereinafter sometimes referred to as A22B) through the transparent adhesive layer and the transparent substrate in the first wiring pattern layer. The case of scattering near the second main surface B42 of 42A. Similarly, in the lowering of the reflection pattern layer 41B, the light incident from the first outer surface portion A22A (hereinafter sometimes referred to as A22A) is scattered near the second main surface B42 of the second wiring pattern layer 42B.

透視型電極素材40之片電阻宜為0.01Ω/sq.以上且50Ω/sq.以下,較宜為0.05Ω/sq.以上且10Ω/sq.以下,更宜為0.1Ω/sq.以上且5Ω/sq.以下。The sheet resistance of the see-through electrode material 40 is preferably 0.01 Ω/sq. or more and 50 Ω/sq. or less, more preferably 0.05 Ω/sq. or more and 10 Ω/sq. or less, more preferably 0.1 Ω/sq. or more and 5 Ω. /sq. Below.

透視型電極素材40之全光線透光率宜為60%以上,較宜為65%以上,更宜為70%以上。透視型電極素材40之全光線透光率只要在上述範圍內,便適合將透視型電極素材40用於觸控面板感測器等。
(4.1)配線圖案層
The total light transmittance of the see-through electrode material 40 is preferably 60% or more, more preferably 65% or more, and more preferably 70% or more. As long as the total light transmittance of the see-through electrode material 40 is within the above range, the see-through electrode material 40 is suitably used for a touch panel sensor or the like.
(4.1) Wiring pattern layer

第一配線圖案層42A係利用光刻法去除第一薄膜金屬箔11A之一部分後,於第一薄膜金屬箔11A之一部分形成有成為第一開口部A40A之間隙的電路。第二配線圖案層42B亦與第一配線圖案層42A同樣係於第二薄膜金屬箔11B之一部分形成有成為第二開口部A40B之間隙的電路。配線圖案層42A、42B之圖案形狀因應透視型電極素材40的用途等適宜調整即可,可舉如網目(格子)形狀、平行細線圖案形狀、梳齒狀等。另,在圖2B所示形態中,第一開口部A40A係第一降低反射層14A之一部分業已去除的部位,且第二開口部A40B係第二降低反射層14B之一部分業已去除的部位。After the first wiring pattern layer 42A removes one portion of the first thin film metal foil 11A by photolithography, a circuit that becomes a gap between the first openings A40A is formed in one portion of the first thin film metal foil 11A. Similarly to the first wiring pattern layer 42A, the second wiring pattern layer 42B is formed with a circuit that forms a gap between the second openings A40B in one portion of the second thin film metal foil 11B. The pattern shape of the wiring pattern layers 42A and 42B may be appropriately adjusted depending on the use of the see-through electrode material 40, and the like, and may be a mesh (lattice) shape, a parallel thin line pattern shape, a comb shape or the like. Further, in the embodiment shown in FIG. 2B, the first opening portion A40A is a portion where the portion of the first reflection-reducing layer 14A has been removed, and the second opening portion A40B is a portion where the portion of the second reflection-reducing layer 14B has been removed.

配線圖案層42A、42B之線寬W因應透視型電極素材40之用途適宜調整即可。將透視型電極素材40用於觸控面板感測器用構件時,線寬W宜為0.5μm以上且10μm以下,較宜為1.0μm以上且8.0μm以下。線寬W若在上述範圍內,可讓第一開口部A40A及第二開口部A40B既寬又大,從而可進一步提升透視型電極素材40的透射性。該等第一開口部A40A及第二開口部A40B之開口寬度W1宜為50μm以上且10000μm以下,較宜為200μm以上且5000μm以下。又,開口率在可期盼可見光透明之區域中宜為69.44%以上且低於100%,較宜為92.45%以上且99.96%以下。另,前述開口率係在基材上可形成配線圖案之面之一定區域內的開口部比率,換言之,即未被前述配線圖案遮蔽的面積比率。The line width W of the wiring pattern layers 42A and 42B may be appropriately adjusted in accordance with the use of the see-through electrode material 40. When the see-through electrode material 40 is used for a member for a touch panel sensor, the line width W is preferably 0.5 μm or more and 10 μm or less, and more preferably 1.0 μm or more and 8.0 μm or less. When the line width W is within the above range, the first opening portion A40A and the second opening portion A40B can be made wider and larger, and the transmittance of the see-through electrode material 40 can be further improved. The opening width W1 of the first opening A40A and the second opening A40B is preferably 50 μm or more and 10000 μm or less, and more preferably 200 μm or more and 5000 μm or less. Further, the aperture ratio is preferably 69.44% or more and less than 100% in the region where visible light is transparent, and is preferably 92.45% or more and 99.96% or less. Further, the aperture ratio is an ratio of an opening in a certain region of a surface on which a wiring pattern can be formed on a substrate, in other words, an area ratio which is not blocked by the wiring pattern.

外表部A22A、A22B之Str宜為0.5以上且1.0以下,較宜為0.55以上且1.0以下,更宜為0.6以上且1.0以下。外表部A22A、A22B之Rz宜為2.5μm以下,較宜為0.01μm以上且2.0μm以下,更宜為0.01μm以上且1.8μm以下。外表部A22A、A22B之Str及Rz只要在上述範圍內,即可令外表部A22A、A22B之透明接著層22A、22B的濁度(霧度)為20%以下,透視型電極素材40便能具有較優異的透視性。濁度(霧度)係可利用霧度計進行測定之值。
(5)器件
The Str of the outer surface portions A22A and A22B is preferably 0.5 or more and 1.0 or less, more preferably 0.55 or more and 1.0 or less, and more preferably 0.6 or more and 1.0 or less. The Rz of the outer surface portions A22A and A22B is preferably 2.5 μm or less, more preferably 0.01 μm or more and 2.0 μm or less, and more preferably 0.01 μm or more and 1.8 μm or less. When the Str and Rz of the outer surface portions A22A and A22B are within the above range, the turbidity (haze) of the transparent adhesive layers 22A and 22B of the outer surface portions A22A and A22B can be 20% or less, and the see-through electrode material 40 can have More excellent perspective. Turbidity (haze) is a value that can be measured by a haze meter.
(5) device

本實施形態之器件50係屬於投影型靜電容方式之一種的互電容式觸控面板感測器。如圖2C所示,器件50具備透視型電極素材40、控制配線51及外罩52。控制電路51與配線圖案層42A、42B電連接。外罩52係安裝在透視型電極素材40之第一配線圖案層42A側之面。另,在圖2C中省略了透明接著層22A、22B、降低反射圖案層41A、41B。The device 50 of the present embodiment is a mutual capacitive touch panel sensor which is one of projection type capacitive methods. As shown in FIG. 2C, the device 50 includes a see-through electrode material 40, a control wiring 51, and a cover 52. The control circuit 51 is electrically connected to the wiring pattern layers 42A and 42B. The cover 52 is attached to the surface of the see-through electrode material 40 on the side of the first wiring pattern layer 42A. In addition, the transparent adhesive layers 22A and 22B and the reduced reflection pattern layers 41A and 41B are omitted in FIG. 2C.

如圖2C所示,器件50係以透視型電極素材40之第二配線圖案層42B側之面位在影像顯示裝置53側的方式,配置在影像顯示裝置53之顯示面T53的前側來使用。影像顯示裝置53可使用譬如液晶顯示面板、電漿影像顯示面板、電致發光(Electro Luminescence)面板、電子書或布勞恩管等。As shown in FIG. 2C, the device 50 is disposed on the front side of the display surface T53 of the image display device 53 so that the surface of the second electrode pattern layer 42B side of the see-through electrode material 40 is on the side of the image display device 53. The image display device 53 can use, for example, a liquid crystal display panel, a plasma image display panel, an electroluminescence (Electro Luminescence) panel, an e-book, or a Braun tube.

在器件50中,第一配線圖案層42A係作為接收電極發揮作用,第二配線圖案層42B則作為傳輸電極發揮作用。亦即,器件50在指示物靠近外罩52表面時,形成在接收電極及傳輸電極之交叉點的電容器之靜電容會產生變化,藉由控制電路51偵測該靜電容之變化,可特定出靠近指示物的位置。指示物可舉如使用者的指尖、觸針或指示棒等導電體。In the device 50, the first wiring pattern layer 42A functions as a receiving electrode, and the second wiring pattern layer 42B functions as a transmission electrode. That is, when the device is close to the surface of the cover 52, the capacitance of the capacitor formed at the intersection of the receiving electrode and the transmitting electrode changes, and the control circuit 51 detects the change of the electrostatic capacitance to specify the proximity. The location of the indicator. The indicator may be an electric conductor such as a fingertip of a user, a stylus or a pointer.

又,圖2C所示之影像顯示裝置53為液晶顯示面板時,在透過偏光太陽眼鏡觀看畫面的情況下,當器件50所使用之透明基材21係採用譬如一般PET時,有時會確認到虹斑;不過,若於透明基材21使用具有比一般PET延遲值更低的材料(以下稱為低延遲材料)或具有延遲值更高的材料(以下稱為高延遲材料),則具有減低上述虹斑的優點。此外,不限於液晶顯示器,在使用偏光板之顯示器並透過偏光墨鏡觀看畫面之情況下,當器件50所使用之透明基材21係採用一般PET時,都會發生黑視(根據觀看角度畫面變全黑而看不見顯示)現象,而高延遲材料也具有減少黑視現象的優點。另,上述低延遲材料係其延遲值譬如在100nm以下之材料,可舉環烯烴薄膜(代表上有JSR製,製品名ARTON;日本ZEON製,製品名ZF-140或ZF-160)等。又,上述高延遲材料係其延遲值譬如在3000nm以上之材料,可舉聚酯薄膜(代表上有東洋紡製造之超雙折射聚酯薄膜,製品名:SRF)等。Further, when the video display device 53 shown in FIG. 2C is a liquid crystal display panel, when the screen is viewed through the polarized sunglasses, when the transparent substrate 21 used in the device 50 is made of, for example, general PET, it may be confirmed. Rainbow spot; however, if the transparent substrate 21 is made of a material having a lower retardation value than a general PET (hereinafter referred to as a low retardation material) or a material having a higher retardation value (hereinafter referred to as a high retardation material), it is reduced. The advantages of the above rainbow spots. Further, not limited to the liquid crystal display, in the case of using a polarizing plate display and viewing the screen through the polarizing sunglasses, when the transparent substrate 21 used in the device 50 is a general PET, black vision occurs (the picture is changed according to the viewing angle) Black, but not visible, and high-latency materials have the advantage of reducing blackout. Further, the low-latency material is a material having a retardation value of, for example, 100 nm or less, and examples thereof include a cycloolefin film (represented by JSR, product name ARTON; manufactured by Japan ZEON, product name ZF-140 or ZF-160). Further, the high retardation material is a material having a retardation value of, for example, 3,000 nm or more, and may be a polyester film (representing a super birefringent polyester film manufactured by Toyobo Co., Ltd., product name: SRF).

在本實施形態中,器件50之感測方式為互電容式,惟本發明不受此限,可為自電容式的感測方式,亦可為自電容式與互電容式組合的感測方式。
(6)附金屬基材之薄膜金屬箔之製造方法
In this embodiment, the sensing mode of the device 50 is a mutual capacitance type, but the invention is not limited thereto, and may be a self-capacitance sensing method, or a self-capacitance type and a mutual capacitance type sensing method. .
(6) Method for producing a film metal foil with a metal substrate

本實施形態之附金屬基材之薄膜金屬箔10的製造方法係依第一步驟、第二步驟、第三步驟與黑色化步驟之順序,經歷各步驟後而製得附金屬基材之薄膜金屬箔10。本實施形態中包含黑色化步驟,惟本發明不受此限,附金屬基材之薄膜金屬箔10之製造方法亦可不含黑色化步驟在內。
(6.1)第一步驟
The method for producing the metal foil 10 with a metal substrate according to the present embodiment is a film metal with a metal substrate after undergoing each step in the order of the first step, the second step, the third step, and the blackening step. Foil 10. In the present embodiment, the blackening step is included, but the present invention is not limited thereto, and the method for producing the thin film metal foil 10 with a metal substrate may not include the blackening step.
(6.1) First step

如圖4A所示,在第一步驟係使電解滾筒110浸潤至第一電解液121中後,將所得金屬基材13從電解滾筒110剝離。藉此可製得圖3A及圖4B所示之金屬基材13。As shown in FIG. 4A, after the electrolytic drum 110 is wetted into the first electrolytic solution 121 in the first step, the obtained metal substrate 13 is peeled off from the electrolytic drum 110. Thereby, the metal base material 13 shown in FIGS. 3A and 4B can be obtained.

具體上,如圖4A所示,以電解滾筒110為陰極,且以與電解滾筒110相對向之截面圓弧狀的架台(無圖示)為陽極,使電解滾筒110浸漬於電解液槽120內之第一電解液121中。接著,使電解滾筒110旋轉令陽極與陰極之間流通電流,藉此於電解滾筒110之表面上電沉積金屬基材13。再來將所得金屬基材13從電解滾筒110剝離,即可連續製得金屬基材13。此時,金屬基材13之與電解滾筒110相接之面為第一主面T13,金屬基材13之不與電解滾筒110相接之面為第二主面B13。Specifically, as shown in FIG. 4A, the electrolytic drum 110 is used as a cathode, and a frame (not shown) having an arcuate cross section facing the electrolytic drum 110 is used as an anode, and the electrolytic drum 110 is immersed in the electrolytic solution tank 120. In the first electrolyte 121. Next, the electrolytic drum 110 is rotated to cause an electric current to flow between the anode and the cathode, whereby the metal substrate 13 is electrodeposited on the surface of the electrolytic drum 110. Further, the obtained metal base material 13 is peeled off from the electrolytic drum 110, whereby the metal base material 13 can be continuously produced. At this time, the surface of the metal base material 13 that is in contact with the electrolytic drum 110 is the first main surface T13, and the surface of the metal base material 13 that is not in contact with the electrolytic drum 110 is the second main surface B13.

電解滾筒110之表面業經研磨。即,電解滾筒110之表面形成有條紋狀的凹凸部(研磨痕)。藉此,可輕易地將已電沉積在電解滾筒110表面的金屬基材13從電解滾筒110剝下。構成電解滾筒110之材質可使用譬如鈦或不鏽鋼等。電解滾筒110之尺寸等因應附金屬基材之薄膜金屬箔10之用途等適宜調整即可。The surface of the electrolytic drum 110 is ground. That is, the surface of the electrolytic drum 110 is formed with streaky uneven portions (polishing marks). Thereby, the metal substrate 13 which has been electrodeposited on the surface of the electrolytic drum 110 can be easily peeled off from the electrolytic drum 110. The material constituting the electrolytic drum 110 can be, for example, titanium or stainless steel. The size of the electrolytic drum 110 or the like may be appropriately adjusted depending on the use of the thin film metal foil 10 to which the metal substrate is attached.

第一電解液121之組成因應金屬基材13之材質等適宜調整即可,金屬基材13之材質為銅時,第一電解液121宜含有銅化合物、酸類及鹵素單體,且進一步含有水溶性高分子較佳。上述銅化物可舉:如硫酸銅、硝酸銅、氯化銅之銅的無機鹽;乙酸銅、草酸銅、銅之烷氧化物及乙醯丙酮銅等銅之有機鹽;以及其等之水合物。上述酸類可舉如硫酸、硝酸、鹽酸之無機酸及如乙酸、草酸、十二基苯磺酸之有機酸。上述鹵素單體可舉氟、氯、溴、碘之各單體,至於使用該等鹵素單體時的性狀(固體、液體、氣體)則無特別限定。關於該等銅化合物、酸類及鹵素單體,可分別選擇一種以上來含有在第一電解液121中。The composition of the first electrolyte solution 121 may be appropriately adjusted depending on the material of the metal base material 13 or the like. When the material of the metal base material 13 is copper, the first electrolyte solution 121 preferably contains a copper compound, an acid, and a halogen monomer, and further contains a water-soluble solution. The polymer is preferred. The above-mentioned copper compound may, for example, be an inorganic salt of copper such as copper sulfate, copper nitrate or copper chloride; an organic salt of copper such as copper acetate, copper oxalate, copper alkoxide or copper acetonitrile; and the like . The above acids may, for example, be inorganic acids such as sulfuric acid, nitric acid or hydrochloric acid, and organic acids such as acetic acid, oxalic acid and dodecylbenzenesulfonic acid. The halogen monomer may be a monomer of fluorine, chlorine, bromine or iodine, and the properties (solid, liquid, gas) when the halogen monomer is used are not particularly limited. These copper compounds, acids, and halogen monomers may be contained in the first electrolyte solution 121 by selecting one or more types.

第一電解液121中含有水溶性高分子,藉此可使金屬基材13之第二主面B13成為高平滑面。即,可使金屬基材13之第二主面B13的Str為0.5以上且1.0以下,且使第二主面B13之Rz為2.5μm以下。其結果,如後述可輕易地使薄膜金屬箔11之第一主面T11成為高平滑面。吾人推測,第一電解液121含有水溶性高分子而可使金屬基材13之第二主面B13成為高平滑面的主要原因是在於,藉由水溶性高分子存在可限制第一電解液121中之銅離子移動之故。具體而言,在電解法中電流容易集中至電解滾筒110之表面凹凸部的凸部前端部,因此當第一電解液121不含水溶性高分子時,第一電解液121中之銅離子容易移動至電解滾筒110之表面凸部。所以,金屬會集中在凸部析出,以致所得金屬基材之不與電解滾筒110相接之側之面(毛面)的表面性狀變得比與電解滾筒110相接之側之面(光面)更粗。相對地,當第一電解液121含有水溶性高分子時,銅離子就不易移動至電解滾筒110之表面凸部,因此比起第一電解液121不含水溶性高分子之情況,金屬較容易在凹部析出。吾人推測金屬基材13之第二主面B13便是藉此成為高平滑面。上述水溶性高分子可舉如平均分子量(重量平均)為500以上且5,000,000以下之聚乙二醇,或平均分子量為5000以下之明膠、羥甲纖維素或羥丙纖維素等水溶性纖維素以及阿拉伯膠等。The first electrolyte solution 121 contains a water-soluble polymer, whereby the second main surface B13 of the metal base material 13 can be made into a highly smooth surface. In other words, the Str of the second main surface B13 of the metal base material 13 can be 0.5 or more and 1.0 or less, and the Rz of the second main surface B13 can be made 2.5 μm or less. As a result, the first main surface T11 of the thin film metal foil 11 can be easily made into a highly smooth surface as will be described later. The reason why the first electrolyte solution 121 contains a water-soluble polymer and the second main surface B13 of the metal base material 13 is a highly smooth surface is that the first electrolyte solution 121 can be restricted by the presence of the water-soluble polymer. The movement of copper ions in the middle. Specifically, in the electrolysis method, the current is easily concentrated to the tip end portion of the convex portion of the surface uneven portion of the electrolytic drum 110. Therefore, when the first electrolyte solution 121 does not contain the water-soluble polymer, the copper ions in the first electrolyte solution 121 are easily moved. To the surface convex portion of the electrolytic drum 110. Therefore, the metal is concentrated on the convex portion, so that the surface property of the surface (matt surface) of the side of the obtained metal substrate which is not in contact with the electrolytic drum 110 becomes larger than the side of the side opposite to the electrolytic drum 110 (glossy surface) ) is thicker. In contrast, when the first electrolyte solution 121 contains a water-soluble polymer, the copper ions are less likely to move to the surface convex portion of the electrolytic drum 110, so that the metal is easier to be used than when the first electrolyte solution 121 does not contain a water-soluble polymer. The concave portion is precipitated. It is assumed that the second main surface B13 of the metal substrate 13 is a high smooth surface. The water-soluble polymer may, for example, be a polyethylene glycol having an average molecular weight (weight average) of 500 or more and 5,000,000 or less, or a water-soluble cellulose such as gelatin, hydroxymethylcellulose or hydroxypropylcellulose having an average molecular weight of 5,000 or less and Acacia and so on.

此外,第一電解液121亦可含有3-巰基-1-丙磺酸等添加劑。藉由第一電解液121含有添加劑,將可做出更平滑而具優異光澤且無異常之突起部的第二主面B13。Further, the first electrolytic solution 121 may further contain an additive such as 3-mercapto-1-propanesulfonic acid. By including the additive in the first electrolytic solution 121, the second main surface B13 which is smoother and has excellent luster and no abnormal protrusions can be obtained.

第一電解液121中宜含有100g/Ⅼ以上且300g/Ⅼ以下之上述銅化合物、50g/L以上且150g/L以下之上述酸類、1質量ppm以上且20質量ppm以下之上述鹵素單體。又,上述電解液121中宜含有15ppm以上且50ppm以下之水溶性高分子。The first electrolyte solution 121 preferably contains the above-mentioned copper compound of 100 g/L or more and 300 g/L or less, the above-mentioned acid of 50 g/L or more and 150 g/L or less, and the halogen monomer of 1 mass ppm or more and 20 mass ppm or less. Further, the electrolyte solution 121 preferably contains a water-soluble polymer of 15 ppm or more and 50 ppm or less.

使第一電解液121含有添加材時,宜含有1ppm以上且50ppm以下之上述添加劑。When the first electrolytic solution 121 contains an additive, it is preferable to contain the above-mentioned additive of 1 ppm or more and 50 ppm or less.

金屬基材13之製造條件因應金屬基材13之材質等適宜調整即可。譬如,電流密度宜為1.0A/dm2 以上且10.0A/dm2 以下,第一電解液121之溫度宜為10℃以上且80℃以下,pH宜為5.0以上且9.0以下。The production conditions of the metal base material 13 may be appropriately adjusted depending on the material of the metal base material 13 or the like. For example, the current density is preferably 1.0 A/dm 2 or more and 10.0 A/dm 2 or less, and the temperature of the first electrolytic solution 121 is preferably 10° C. or higher and 80° C. or lower, and the pH is preferably 5.0 or more and 9.0 or less.

調整金屬基材13之第二主面B13的Str及Rz之方法可舉如調節要添加之水溶性高分子的分子量及/或添加量之方法等。調整金屬基材13之厚度的方法可舉如調節電流密度及/或將滾筒110浸漬於第一電解液121中並流通電流之時間的方法等。The method of adjusting Str and Rz of the second main surface B13 of the metal base material 13 may be, for example, a method of adjusting the molecular weight and/or the amount of addition of the water-soluble polymer to be added. The method of adjusting the thickness of the metal base material 13 may be, for example, a method of adjusting the current density and/or immersing the drum 110 in the first electrolyte solution 121 and flowing a current.

以所述方式製得之金屬基材13的表面性狀,第一主面T13會變得比第二主面B13更粗。吾人推測此結果主要源自下列因素:因第一電解液121含有水溶性高分子,而使金屬基材13之第二主面B13變高平滑面;由於金屬基材13係直接電沉積於電解滾筒110之表面,所以金屬基材13之第一主面T13會被轉印上形成有研磨痕之電解滾筒110的表面性狀等。
(6.2)第二步驟
In the surface property of the metal base material 13 obtained in the above manner, the first main surface T13 becomes thicker than the second main surface B13. It is presumed that this result is mainly due to the following factors: since the first electrolyte 121 contains a water-soluble polymer, the second main surface B13 of the metal substrate 13 becomes a smooth surface; since the metal substrate 13 is directly electrodeposited in electrolysis The surface of the drum 110 is such that the first main surface T13 of the metal base material 13 is transferred to the surface of the electrolytic drum 110 on which the polishing marks are formed.
(6.2) Second step

在第二步驟中,於金屬基材13之第二主面B13上形成剝離層12。藉此可製得圖3B及圖4C所示之第一積層板15。In the second step, the peeling layer 12 is formed on the second main surface B13 of the metal substrate 13. Thereby, the first laminate 15 shown in Figs. 3B and 4C can be obtained.

剝離層12係直接形成在金屬基材13之第二主面B13上,因此金屬基材13之第二主面B13的表面性狀會被轉印至剝離層12之第一主面T12上。此外,剝離層12之厚度非常薄(0.001μm以上且0.50μm以下),所以可形成剝離層12之第一主面T12的Str及Rz與第二主面B12的Str及Rz和金屬基材13之第二主面B13的Str及Rz略同的剝離層12。Since the peeling layer 12 is directly formed on the second main surface B13 of the metal base material 13, the surface property of the second main surface B13 of the metal base material 13 is transferred to the first main surface T12 of the peeling layer 12. Further, since the thickness of the peeling layer 12 is very thin (0.001 μm or more and 0.50 μm or less), Str and Rz of the first main surface T12 of the peeling layer 12 and Str and Rz of the second main surface B12 and the metal base material 13 can be formed. The second main surface B13 has the same peeling layer 12 as Str and Rz.

形成剝離層12之方法可舉如電鍍法等。電鍍法使用之電解液組成因應剝離層12之材質等適宜調整即可,宜含有金屬鹽、金屬氧化合物及有機酸。上述金屬鹽可舉鎳、鉬、鉻、鐵、鈦、鎢、磷等之硫酸鹽或如硝酸鹽、氯化物之無機鹽;或是乙酸鹽或草酸鹽、烷氧化物或乙醯丙酮基鹽等有機鹽;以及其等之水合物。上述金屬氧化合物可舉鉬酸鈉或鎢酸鈉等金屬酸鹽。上述有機酸可舉乙酸、草酸、檸檬酸以及其等之水合物。關於該等金屬鹽、金屬氧化合物及有機酸,可分別選擇一種以上來含在形成剝離層12之電解液中。The method of forming the peeling layer 12 may be, for example, a plating method. The composition of the electrolyte used in the electroplating method may be appropriately adjusted depending on the material of the peeling layer 12, and preferably contains a metal salt, a metal oxygen compound, and an organic acid. The metal salt may be a sulfate of nickel, molybdenum, chromium, iron, titanium, tungsten, phosphorus or the like or an inorganic salt such as a nitrate or a chloride; or an acetate or an oxalate, an alkoxide or an acetonide An organic salt such as a salt; and a hydrate thereof. The metal oxide compound may be a metal acid salt such as sodium molybdate or sodium tungstate. The organic acid may be acetic acid, oxalic acid, citric acid or the like. The metal salt, the metal oxygen compound, and the organic acid may be one or more selected from the electrolyte solution forming the release layer 12, respectively.

形成剝離層12之電解液中宜含有0.6g/Ⅼ以上且60g/Ⅼ以下(金屬換算)之上述金屬鹽、0.1g/Ⅼ以上且10g/Ⅼ以下(金屬換算)之上述金屬氧化合物、0.1g/Ⅼ以上且300g/Ⅼ以下之上述有機酸。The electrolytic solution forming the peeling layer 12 preferably contains the above metal salt of 0.6 g/L or more and 60 g/L or less (in terms of metal), 0.1 g/L or more and 10 g/L or less (in terms of metal) of the above metal oxide compound, 0.1 The above organic acid having a g/L or more and 300 g/L or less.

電鍍法之製造條件因應剝離層12之材質等適宜調整即可。譬如,形成剝離層12之電解液溫度宜為20℃以上且60℃以下,pH宜為5.0以上且9.0以下,電流密度宜為0.5A/dm2 以上且8A/dm2 以下,處理時間宜為5秒以上且40秒以內。The manufacturing conditions of the plating method may be appropriately adjusted depending on the material of the peeling layer 12 or the like. For example, the temperature of the electrolyte forming the release layer 12 is preferably 20° C. or higher and 60° C. or lower, and the pH is preferably 5.0 or more and 9.0 or less, and the current density is preferably 0.5 A/dm 2 or more and 8 A/dm 2 or less, and the treatment time is preferably 5 seconds or more and 40 seconds or less.

電鍍法之製造條件只要在上述範圍內,即可形成剝離層12之第一主面T12及第二主面B12的Str及Rz與金屬基材13之第二主面B13的Str及Rz略同的剝離層12。又,由於可做成剝離層12之第一主面T12側主要由合金構成且第二主面B12側主要由氧化物構成的剝離層,故具有導通性。藉此,在第三步驟中可使用電鍍法於剝離層12上形成薄膜金屬11。
(6.3)第三步驟
When the manufacturing conditions of the plating method are within the above range, Str and Rz which form the first main surface T12 and the second main surface B12 of the peeling layer 12 are slightly the same as Str and Rz of the second main surface B13 of the metal base material 13. Stripping layer 12. Further, since the first main surface T12 side of the peeling layer 12 can be formed mainly of an alloy and the second main surface B12 side is mainly a peeling layer made of an oxide, it has electrical conductivity. Thereby, the thin film metal 11 can be formed on the peeling layer 12 by electroplating in the third step.
(6.3) Third step

在第三步驟中,如圖4C所示,利用電鍍法於剝離層12上形成薄膜金屬箔11。藉此可製得圖3C及圖4D所示之第二積層板16。In the third step, as shown in FIG. 4C, a thin film metal foil 11 is formed on the peeling layer 12 by electroplating. Thereby, the second laminate 16 shown in Figs. 3C and 4D can be obtained.

薄膜金屬箔11係直接形成在剝離層12上,因此剝離層12之第二主面B12的表面性狀會被轉印至薄膜金屬箔11之第一主面T11。所以,可形成薄膜金屬箔11之第一主面T11的Str及Rz與剝離層12之第二主面B12的Str及Rz略同的薄膜金屬箔11。即,在本實施形態中可形成金屬基材13之第二主面B13與薄膜金屬箔11之第一主面T11的Str及Rz隔著剝離層12略同的薄膜金屬箔11。Since the thin film metal foil 11 is directly formed on the peeling layer 12, the surface property of the second main surface B12 of the peeling layer 12 is transferred to the first main surface T11 of the thin film metal foil 11. Therefore, the thin metal foil 11 in which Str and Rz of the first main surface T11 of the thin film metal foil 11 are slightly the same as Str and Rz of the second main surface B12 of the peeling layer 12 can be formed. In other words, in the present embodiment, the second main surface B13 of the metal base material 13 and the thin metal foil 11 of the first main surface T11 of the thin film metal foil 11 which are slightly opposite to the peeling layer 12 can be formed.

形成薄膜金屬箔11之方法可舉如圖4C中所示,以金屬基材13為陰極,將第一積層板15浸漬於第二電解液槽130內之第二電解液131中後,使陽極與陰極之間流通電流,藉以將薄膜金屬箔11電沉積至金屬基材13之第二主面B13側之表面(剝離層12之第二主面B12)上的方法等。The method of forming the thin film metal foil 11 is as shown in FIG. 4C. The metal substrate 13 is used as a cathode, and the first laminate 15 is immersed in the second electrolyte 131 in the second electrolyte tank 130 to form an anode. A current is passed between the cathode and the cathode, whereby the thin film metal foil 11 is electrodeposited onto the surface of the second main surface B13 side of the metal substrate 13 (the second main surface B12 of the peeling layer 12).

第二電解液131因應構成薄膜金屬箔11之材質適宜調整即可,可使用硫酸銅鍍敷浴、氰化銅鍍敷浴、氟硼酸銅鍍敷浴、焦磷酸銅鍍敷浴或胺磺酸銅鍍敷浴等。The second electrolyte solution 131 may be appropriately adjusted in accordance with the material constituting the thin film metal foil 11, and a copper sulfate plating bath, a copper cyanide plating bath, a copper fluoroborate plating bath, a copper pyrophosphate plating bath or an amine sulfonic acid may be used. Copper plating bath, etc.

第二電解液131之組成因應薄膜金屬箔11之材質等適宜調整即可,薄膜金屬箔11之材質為銅時,第二電解液131宜含有銅化合物、酸類及鹵素單體,且進一步含有水溶性高分子較佳。上述銅化物、上述酸類、上述鹵素單體以及上述水溶性高分子可舉與第一電解液121中含有之物相同之物。第二電解液131中宜含有100g/L以上且300g/L以下之上述銅化合物、50g/L以上且150g/L以下之上述酸類、1質量ppm以上且20質量ppm以下之上述鹵素單體。又,上述電解液131中宜含有15ppm以上且35ppm以下之水溶性高分子。The composition of the second electrolytic solution 131 may be appropriately adjusted in accordance with the material of the thin film metal foil 11 or the like. When the material of the thin film metal foil 11 is copper, the second electrolytic solution 131 preferably contains a copper compound, an acid, and a halogen monomer, and further contains a water-soluble solution. The polymer is preferred. The copper compound, the acid, the halogen monomer, and the water-soluble polymer may be the same as those contained in the first electrolyte 121. The second electrolyte solution 131 preferably contains the copper compound of 100 g/L or more and 300 g/L or less, the above-mentioned acid of 50 g/L or more and 150 g/L or less, and the halogen monomer of 1 mass ppm or more and 20 mass ppm or less. Further, the electrolyte solution 131 preferably contains a water-soluble polymer of 15 ppm or more and 35 ppm or less.

薄膜金屬箔11之製造條件因應薄膜金屬箔11之材質等適宜調整即可。譬如,電流密度宜為1.0A/dm2 以上且10.0A/dm2 以下,第二電解液131之溫度宜為10℃以上且80℃以下,pH宜為5.0以上且9.0以下。The production conditions of the film metal foil 11 may be appropriately adjusted in accordance with the material of the film metal foil 11 or the like. For example, the current density is preferably 1.0 A/dm 2 or more and 10.0 A/dm 2 or less, and the temperature of the second electrolytic solution 131 is preferably 10 ° C or more and 80 ° C or less, and the pH is preferably 5.0 or more and 9.0 or less.

將薄膜金屬箔11之第一主面T11的Str及Rz調整至上述範圍內的方法可舉如:將金屬基材13之第二主面B13的Str調整至0.5以上且1.0以下且將第一主面T13的Rz調整至2.5μm以下之範圍內,並調整剝離層12之厚度以使剝離層12跟隨金屬基材13之第二主面B13之表面性狀的方法;及,調節電流密度及/或將滾筒浸漬於電解液131中後流通電流之時間的方法等。調整薄膜金屬箔11之厚度的方法,可舉如調節電流密度及/或將滾筒浸漬於電解液131中後流通電流之時間的方法等。The method of adjusting Str and Rz of the first main surface T11 of the thin film metal foil 11 to the above range may be such that the Str of the second main surface B13 of the metal base material 13 is adjusted to 0.5 or more and 1.0 or less and the first The Rz of the main surface T13 is adjusted to a range of 2.5 μm or less, and the thickness of the peeling layer 12 is adjusted so that the peeling layer 12 follows the surface property of the second main surface B13 of the metal substrate 13; and, the current density is adjusted and/or Or a method of immersing the drum in the electrolytic solution 131 and then flowing a current. The method of adjusting the thickness of the thin film metal foil 11 may be, for example, a method of adjusting the current density and/or the time during which the drum is immersed in the electrolytic solution 131 and the current flows.

又,亦可利用電鍍法於剝離層12上形成銅打底鍍敷層後,再於銅打底鍍敷層上形成薄膜金屬箔11。藉此,可對剝離層12上施行較均勻的鍍敷,從而可明顯減少薄膜金屬箔11的小孔數。形成銅打底鍍敷層之鍍敷浴可使用焦磷酸銅鍍敷浴、氰化銅鍍敷浴。於銅打底鍍敷層上形成薄膜金屬箔11之鍍敷浴可使用譬如硫酸銅鍍敷浴、氟硼酸銅鍍敷浴、焦磷酸銅鍍敷浴、胺磺酸銅鍍敷浴、氰化銅鍍敷浴。銅打底鍍敷層之厚度宜為0.001μm以上且1μm以下。此時,由於銅打底鍍敷層之厚度很薄,所以剝離層12之第二主面B12的表面性狀會被轉印至薄膜金屬箔11之第一主面T11,從而可形成薄膜金屬箔11之第一主面T11的Str及Rz與剝離層12之第二主面B12的Str及Rz略同的薄膜金屬箔11。具體上,第二電解液131宜為下述組成。Further, a copper base plating layer may be formed on the peeling layer 12 by an electroplating method, and then a thin film metal foil 11 may be formed on the copper underlying plating layer. Thereby, a more uniform plating can be applied to the peeling layer 12, so that the number of small holes of the film metal foil 11 can be remarkably reduced. A plating bath for forming a copper primer plating layer may be a copper pyrophosphate plating bath or a copper cyanide plating bath. The plating bath for forming the thin film metal foil 11 on the copper plating layer can be used, for example, a copper sulfate plating bath, a copper fluoroborate plating bath, a copper pyrophosphate plating bath, a copper sulfonate plating bath, and cyanidation. Copper plating bath. The thickness of the copper plating layer is preferably 0.001 μm or more and 1 μm or less. At this time, since the thickness of the copper plating layer is very thin, the surface property of the second main surface B12 of the peeling layer 12 is transferred to the first main surface T11 of the thin film metal foil 11, so that a thin film metal foil can be formed. The thin metal foil 11 of Str and Rz of the first main surface T11 of 11 is slightly the same as Str and Rz of the second main surface B12 of the peeling layer 12. Specifically, the second electrolyte 131 is preferably of the following composition.

用於銅打底鍍敷之電解液宜含有焦磷酸銅、焦磷酸之鹼金屬鹽及鹼性物質。上述鹼性物質可舉氫氧化鈉或碳酸氫鈉、氨等。用於銅打底鍍敷之電解液中宜含有60g/Ⅼ以上且120g/Ⅼ以下之上述焦磷酸銅、100g/l以上且400g/Ⅼ以下之上述焦磷酸之鹼金屬鹽、0.1ml/Ⅼ以上且10ml/Ⅼ以下之上述鹼性物質。The electrolyte for copper base plating preferably contains copper pyrophosphate, an alkali metal salt of pyrophosphoric acid and an alkaline substance. The basic substance may, for example, be sodium hydroxide, sodium hydrogencarbonate or ammonia. The electrolyte for copper base plating preferably contains 60 g/L or more and 120 g/L or less of the above copper pyrophosphate, 100 g/l or more and 400 g/L or less of the above alkali metal salt of pyrophosphoric acid, 0.1 ml/L. The above basic substance of 10 ml/L or less.

電鍍法之製造條件因應薄膜金屬箔11之用途等適宜調整即可。譬如,第二電解液131之溫度宜為20℃以上且80℃以下,pH宜為6.0以上且9.0以下,電流密度宜為0.5A/dm2 以上且10A/dm2 以下,處理時間宜為1秒以上且60秒以內。
(6.4)黑色化步驟
The manufacturing conditions of the plating method may be appropriately adjusted depending on the use of the thin film metal foil 11 or the like. For example, the temperature of the second electrolyte 131 is preferably 20° C. or higher and 80° C. or lower, the pH is preferably 6.0 or more and 9.0 or less, and the current density is preferably 0.5 A/dm 2 or more and 10 A/dm 2 or less, and the treatment time is preferably 1 More than seconds and less than 60 seconds.
(6.4) Blackening step

在黑色化步驟中,於薄膜金屬箔11之第二主面B11上形成降低反射層14。即,在薄膜金屬箔11之第二主面B11上施行黑色化處理。藉此可製得圖1A及圖3D所示之附金屬基材之薄膜金屬箔10。In the blackening step, the reflection-reducing layer 14 is formed on the second main surface B11 of the thin film metal foil 11. That is, the blackening treatment is performed on the second main surface B11 of the thin film metal foil 11. Thereby, the film metal foil 10 with the metal substrate shown in Figs. 1A and 3D can be obtained.

形成降低反射層14之方法可舉如電鍍法等。於該電鍍法使用之鍍敷浴因應構成降低反射層14之材質適宜調整即可,可使用譬如鉻酸鹽鍍料等。A method of forming the reflection reducing layer 14 may be, for example, an electroplating method. The plating bath used in the plating method may be appropriately adjusted in order to reduce the material of the reflective layer 14, and for example, a chromate plating or the like may be used.

具體上,用於電鍍法之鍍敷浴宜含有金屬化合物及酸類。上述金屬化物可舉選自銅、鎳、鈷、鎢或鋁中之金屬的硫酸鹽或如硝酸鹽、氯化物之無機鹽;或是乙酸鹽或草酸鹽、金屬之烷氧化物或乙醯丙酮基鹽等有機鹽;以及其等之水合物。上述酸類可舉如硫酸、硝酸、鹽酸之無機酸及如乙酸、草酸、十二基苯磺酸之有機酸。用於電鍍法之鍍敷浴中宜含有50g/l以上且300g/Ⅼ以下之上述金屬化合物、10g/Ⅼ以上且300g/Ⅼ以下之上述酸類。Specifically, the plating bath used for the electroplating method preferably contains a metal compound and an acid. The above metallization may be a sulfate of a metal selected from copper, nickel, cobalt, tungsten or aluminum or an inorganic salt such as a nitrate or a chloride; or an acetate or an oxalate, a metal alkoxide or an acetamidine. An organic salt such as a acetonide salt; and a hydrate thereof. The above acids may, for example, be inorganic acids such as sulfuric acid, nitric acid or hydrochloric acid, and organic acids such as acetic acid, oxalic acid and dodecylbenzenesulfonic acid. The plating bath used in the plating method preferably contains the above-mentioned metal compound of 50 g/l or more and 300 g/L or less, and the above-mentioned acid of 10 g/L or more and 300 g/L or less.

電鍍法之製造條件因應薄膜金屬箔11之用途等適宜調整即可,宜在溫度為10℃以上且60℃以下、電流密度為1A/dm2 以下50A/dm2 以下、處理時間為10秒以上且100秒以內做調製,而於薄膜金屬箔11之第二主面B11形成由瘤狀的銅粒子所構成之粗化層。The production conditions of the plating method may be appropriately adjusted depending on the use of the thin film metal foil 11, etc., and the temperature is preferably 10° C. or higher and 60° C. or lower, the current density is 1 A/dm 2 or less, 50 A/dm 2 or less, and the treatment time is 10 seconds or longer. Further, modulation is performed within 100 seconds, and a roughened layer composed of knob-shaped copper particles is formed on the second main surface B11 of the thin film metal foil 11.

接著,宜對形成粗化層後之表面利用含有1.0g/Ⅼ以上且10g/Ⅼ以下之重鉻酸鈉2水合物的鍍敷浴進行鉻酸鹽處理。Next, it is preferred to carry out chromate treatment on the surface after the formation of the roughened layer by using a plating bath containing 1.0 g/L or more and 10 g/L or less of sodium dichromate 2 hydrate.

電鍍法之製造條件因應薄膜金屬箔11之用途等適宜調整即可,pH宜為3.0以上且5.0以下,液溫宜為10℃以上且50℃以下,電流密度宜為0.1A/dm2 以上且3.0A/dm2 以下。
(7)覆金屬之透明基材材料的製造方法
The production conditions of the plating method may be appropriately adjusted depending on the use of the thin film metal foil 11, etc., and the pH is preferably 3.0 or more and 5.0 or less, and the liquid temperature is preferably 10 ° C or more and 50 ° C or less, and the current density is preferably 0.1 A/dm 2 or more. 3.0A/dm 2 or less.
(7) Method for producing a metal-clad transparent substrate material

本實施形態之覆金屬之透明基材材料20的製造方法包含第一步驟、第二步驟、第三步驟、黑色化步驟、第四步驟及第五步驟。在第四步驟中,係準備透明基材21,並於透明基材21之兩面形成透明接著劑層來製作附透明接著劑層之透明基材23。在第五步驟中,係將附金屬基材之薄膜金屬箔10之薄膜金屬箔11側的面B14與附透明接著劑層之透明基材23之透明接著劑層之面貼合。依照第一步驟、第二步驟、第三步驟、黑色化步驟、第四步驟、第五步驟之順序經過各步驟後即可製得覆金屬之透明基材材料20。本實施形態中包含黑色化步驟,惟本發明不受此限,覆金屬之透明基材材料20的製造方法亦可不含黑色化步驟在內。在本實施形態中係在透明基材21之兩面形成透明接著劑層,惟本發明不受此限,亦可僅於透明基材21之單面形成有透明接著劑層。
(7.1)第四步驟
The method for producing the metal-clad transparent substrate material 20 of the present embodiment includes a first step, a second step, a third step, a blackening step, a fourth step, and a fifth step. In the fourth step, the transparent substrate 21 is prepared, and a transparent adhesive layer is formed on both surfaces of the transparent substrate 21 to form a transparent substrate 23 with a transparent adhesive layer. In the fifth step, the surface B14 on the side of the thin film metal foil 11 of the metal foil with metal substrate is bonded to the surface of the transparent adhesive layer of the transparent substrate 23 to which the transparent adhesive layer is attached. The metal-coated transparent substrate material 20 can be obtained by following each step in the order of the first step, the second step, the third step, the blackening step, the fourth step, and the fifth step. In the present embodiment, the blackening step is included, but the present invention is not limited thereto, and the method of producing the metal-clad transparent substrate material 20 may not include the blackening step. In the present embodiment, a transparent adhesive layer is formed on both surfaces of the transparent substrate 21. However, the present invention is not limited thereto, and a transparent adhesive layer may be formed only on one surface of the transparent substrate 21.
(7.1) Fourth step

在第四步驟中,係準備透明基材21,並於透明基材21之第一主面T21形成第一透明接著劑層22AU,並於透明基材21之第二主面B21形成第二透明接著劑層22BU。藉此可製得圖5A所示之附透明接著劑層之透明基材23。第一透明接著劑層22AU之硬化物為第一透明接著層22A。第二透明接著劑層22BU之硬化物為第二透明接著層22B。In the fourth step, the transparent substrate 21 is prepared, and a first transparent adhesive layer 22AU is formed on the first main surface T21 of the transparent substrate 21, and a second transparent surface is formed on the second main surface B21 of the transparent substrate 21. Next to the agent layer 22BU. Thereby, the transparent substrate 23 with the transparent adhesive layer shown in Fig. 5A can be obtained. The cured material of the first transparent adhesive layer 22AU is the first transparent adhesive layer 22A. The cured material of the second transparent adhesive layer 22BU is the second transparent adhesive layer 22B.

形成第一透明接著劑層22AU及第二透明接著劑層22BU的方法可舉如凹版印刷法、網板印刷法或使用凹版之反輥式塗佈法等。
(7.2)第五步驟
The method of forming the first transparent adhesive layer 22AU and the second transparent adhesive layer 22BU may be, for example, a gravure printing method, a screen printing method, or a reverse roll coating method using a gravure.
(7.2) Fifth step

在第五步驟中,將第一附金屬基材之薄膜金屬箔10A之第一薄膜金屬箔11A側的面B14與附透明接著劑層之透明基材23之第一透明接著劑層22AU的面T23貼合。並且,將第二附金屬基材之薄膜金屬箔10B之第二薄膜金屬箔11B側的面B14與附透明接著劑層之透明基材23之第二透明接著劑層22BU的面B23貼合。藉此可製得圖1B及圖5C所示之覆金屬之透明基材材料20。In the fifth step, the surface B14 on the first thin film metal foil 11A side of the first metal substrate-attached metal foil 10A and the first transparent adhesive layer 22AU on the transparent substrate 23 with the transparent adhesive layer are applied. T23 fits. Then, the surface B14 on the second thin film metal foil 11B side of the second metal substrate-attached metal foil 10B is bonded to the surface B23 of the second transparent adhesive layer 22BU of the transparent substrate 23 to which the transparent adhesive layer is attached. Thereby, the metal-clad transparent substrate material 20 shown in Figs. 1B and 5C can be obtained.

貼合方法可舉如下列方法等。亦即,如圖5B所示,使第一附金屬基材之薄膜金屬箔10A之第一薄膜金屬箔11A側的面B14與附透明接著劑層之透明基材23之第一透明接著劑層22AU的面T23相對向。並且,使第二附金屬基材之薄膜金屬箔10B之第二薄膜金屬箔11B側的面B14與附透明接著劑層之透明基材23之第二透明接著劑層22BU的面B23相對向。然後將該等一體化,使第一透明接著劑層22AU及第二透明接著劑層22BU硬化。藉此,第一透明接著劑層22AU會硬化而成為第一透明接著層22A。第二透明接著劑層22BU會硬化而成為第二透明接著層22B。The bonding method can be exemplified by the following methods and the like. That is, as shown in FIG. 5B, the first transparent metal layer 11A on the first film metal foil 11A and the first transparent adhesive layer 23 on the transparent substrate 23 with the transparent adhesive layer are provided. The face T23 of the 22AU is opposite. Further, the surface B14 on the second thin film metal foil 11B side of the second metal substrate-attached metal foil 10B is opposed to the surface B23 of the second transparent adhesive layer 22BU of the transparent substrate 23 to which the transparent adhesive layer is attached. These are then integrated to harden the first transparent adhesive layer 22AU and the second transparent adhesive layer 22BU. Thereby, the first transparent adhesive layer 22AU is hardened to become the first transparent adhesive layer 22A. The second transparent adhesive layer 22BU is hardened to become the second transparent adhesive layer 22B.

使第一透明接著劑層22AU及第二透明接著劑層22BU硬化之方法,因應構成第一透明接著劑層22AU及第二透明接著劑層22BU之透明接著劑適宜調整即可,可舉如使用壓製機等在施加預定壓力下進行加熱之方法、在常壓或低壓環境下進行加熱之方法等。
(8)透視型電極用積層板之製造方法
The method of curing the first transparent adhesive layer 22AU and the second transparent adhesive layer 22BU may be appropriately adjusted according to the transparent adhesive constituting the first transparent adhesive layer 22AU and the second transparent adhesive layer 22BU, and may be used. A method in which a press or the like is heated under a predetermined pressure, a method of heating under a normal pressure or a low pressure environment, or the like.
(8) Method for manufacturing laminated plate for see-through electrode

透視型電極用積層板30之製造方法包含第一步驟、第二步驟、第三步驟、黑色化步驟、第四步驟、第五步驟及第六步驟。在第六步驟中,係將金屬基材及剝離層從覆金屬之透明基材材料20剝離。依照第一步驟、第二步驟、第三步驟、黑色化步驟、第四步驟、第五步驟、第六步驟之順序經過各步驟後即可製得透視型電極用積層板30。本實施形態中包含黑色化步驟,惟本發明不受此限,覆金屬之透明基材材料20的製造方法亦可不含黑色化步驟在內。在本實施形態中係在透明基材21之兩面形成透明接著劑層,惟本發明不受此限,亦可僅於透明基材21之單面形成有透明接著劑層。
(8.1)第六步驟
The manufacturing method of the laminated electrode 30 for a see-through electrode includes a first step, a second step, a third step, a blackening step, a fourth step, a fifth step, and a sixth step. In the sixth step, the metal substrate and the release layer are peeled off from the metal-clad transparent substrate material 20. The laminated electrode laminated plate 30 can be obtained by following each step in the order of the first step, the second step, the third step, the blackening step, the fourth step, the fifth step, and the sixth step. In the present embodiment, the blackening step is included, but the present invention is not limited thereto, and the method of producing the metal-clad transparent substrate material 20 may not include the blackening step. In the present embodiment, a transparent adhesive layer is formed on both surfaces of the transparent substrate 21. However, the present invention is not limited thereto, and a transparent adhesive layer may be formed only on one surface of the transparent substrate 21.
(8.1) Sixth step

在第六步驟中,從覆金屬之透明基材材料20剝離第一剝離層12A、第一金屬基材13A、第二剝離層12B及第二金屬基材13B。藉此可製得圖2A及圖5D所示之透視型電極用積層板30。將第一金屬基材13A剝離時,第一剝離層12A會隨第一金屬基材13A一起從第一薄膜金屬箔11A剝離。同樣地,將第二金屬基材13B剝離時,第二剝離層12B會隨第二金屬基材13B一起從第二薄膜金屬箔11B剝離。
實施例
In the sixth step, the first release layer 12A, the first metal substrate 13A, the second release layer 12B, and the second metal substrate 13B are peeled off from the metal-clad transparent substrate material 20. Thereby, the laminate electrode 30 for a see-through type electrode shown in FIGS. 2A and 5D can be obtained. When the first metal base material 13A is peeled off, the first release layer 12A is peeled off from the first film metal foil 11A along with the first metal base material 13A. Similarly, when the second metal substrate 13B is peeled off, the second release layer 12B is peeled off from the second film metal foil 11B along with the second metal substrate 13B.
Example

以下藉由實施例來具體說明本發明。The invention will be specifically described below by way of examples.

在實施例中,Str、Rz及薄膜金屬箔之厚度測定方法如下。
[測定Str]
In the examples, the thicknesses of the Str, Rz and thin film metal foils were measured as follows.
[Measure Str]

表面粗度係使用計測器(KEYENCE CO.製造之「雷射顯微鏡VK-X150」,使用50倍透鏡),遵照ISO25178來測定薄膜金屬箔之Str。測定薄膜金屬箔在274.70μm×210.00μm之測定區域內的高度分布,將該測定區域等分成4份之區域,求出各區域之Str後,以該等之平均值作為薄膜金屬箔之表面性狀的長寬比(Str)。Str為0.5以上且1.0以下者評估為「○」,低於0.5者評估為「×」。
[測定Rz]
The surface roughness was measured by using a measuring instrument ("laser microscope VK-X150" manufactured by KEYENCE CO., using a 50-fold lens), and measuring the Str of the film metal foil in accordance with ISO25178. The height distribution of the film metal foil in the measurement region of 274.70 μm × 210.00 μm was measured, and the measurement region was equally divided into four regions, and after the Str of each region was determined, the average value of the film was used as the surface property of the film metal foil. Aspect ratio (Str). Those with a Str of 0.5 or more and 1.0 or less are evaluated as "○", and those below 0.5 are evaluated as "X".
[Measure Rz]

使用表面粗度計測器(股分有限公司東京精密製造之「SURFCOM1500SD」),利用觸針法遵照JIS B 0651(1996)及JIS B 0601(1994)以觸針2μm測定Rz。測定範圍係直線狀之10mm。Rz為2.5μm以下者評估為「○」,超過2.5μm者評估為「×」。
[測定金屬基材及薄膜金屬箔之厚度]
Rz was measured with a stylus 2 μm by a stylus method in accordance with JIS B 0651 (1996) and JIS B 0601 (1994) using a surface roughness measuring instrument ("SURFCOM 1500SD" manufactured by Tokyo Seimi Co., Ltd.). The measurement range is 10 mm in a straight line. When Rz is 2.5 μm or less, it is evaluated as “○”, and when it exceeds 2.5 μm, it is evaluated as “×”.
[Measurement of thickness of metal substrate and film metal foil]

金屬基材及薄膜金屬箔之厚度係利用測定切成10cm四方之銅箔的重量後從銅密度8.96g/cm3 進行換算之重量法,來算出厚度。
[測定截面長度及高低差]
The thickness of the metal base material and the film metal foil was calculated by a weight method in which the weight of the copper foil cut into 10 cm square was measured and converted from a copper density of 8.96 g/cm 3 .
[Measure section length and height difference]

截面長度及高低差係使用計測器(KEYENCE CO.製造之「雷射顯微鏡VK-X100」,使用50倍透鏡),來測出配線圖案層之高低差及截面長度L1。基準線102之長度L2設為274.410μm。The cross-sectional length and the height difference were measured using a measuring instrument ("Ray Microscope VK-X100" manufactured by KEYENCE CO., using a 50-fold lens) to measure the height difference and the cross-sectional length L1 of the wiring pattern layer. The length L2 of the reference line 102 is set to 274.410 μm.

高低差則如圖13所示,將配線圖案層42以垂直平面進行裁切後,算出出現在其切口之截面曲線101之凹凸中,相對於凸部之平均高度L3的最大頂高度Hp與最大底深度Hv之和(高低差=Hp+Hv)。截面長度L1如圖13所示係計測截面曲線101之長度。並且算出相對於基準線102之長度L2的比率(L1/L2)。
[測定配線圖案層之斷線數量]
The height difference is as shown in FIG. 13, and after the wiring pattern layer 42 is cut in a vertical plane, the maximum top height Hp and the maximum height L3 with respect to the convex portion are calculated in the unevenness of the section curve 101 of the slit. The sum of the bottom depths Hv (height difference = Hp + Hv). The section length L1 is the length of the measurement section curve 101 as shown in FIG. Then, the ratio (L1/L2) with respect to the length L2 of the reference line 102 is calculated.
[Measure the number of broken wires in the wiring pattern layer]

利用光刻法去除單面透視型電極用積層板30S之薄膜金屬箔11及降低反射層14之一部分後,獲得圖6所示之具有斷線檢查用圖案之斷線檢查用配線圖案層42C的斷線檢查用單面透視型電極素材40C。計數所得斷線檢查用單面透視型電極素材40C之斷線檢查用配線圖案層42C的斷線數量。
[實施例1]
[製作附金屬基材之薄膜金屬箔10]
(金屬基材13)
After removing the thin film metal foil 11 of the single-sided see-through electrode laminated board 30S and the portion of the reflective layer 14 by photolithography, the disconnection inspection wiring pattern layer 42C having the pattern for disconnection inspection shown in FIG. 6 is obtained. Single-sided see-through electrode material 40C for wire breakage inspection. The number of disconnection of the disconnection inspection wiring pattern layer 42C of the single-sided see-through type electrode material 40C for the disconnection inspection is counted.
[Example 1]
[Production of film metal foil with metal substrate 10]
(Metal substrate 13)

就電解滾筒110準備表面經研磨之鈦製旋轉滾筒。就第一電解液121準備含有硫酸銅5水合物170g/L、硫酸100g/L、氯6質量ppm、明膠(平均分子量2000)30ppm之電解液。A titanium rotating drum having a surface ground is prepared for the electrolytic drum 110. An electrolyte solution containing 170 g/L of copper sulfate pentahydrate, 100 g/L of sulfuric acid, 6 mass ppm of chlorine, and gelatin (average molecular weight: 2000) of 30 ppm was prepared for the first electrolyte solution 121.

如圖4A所示,以電解滾筒110為陰極,且以與電解滾筒110相對向之截面圓弧狀的架台為陽極,使電解滾筒110浸漬於電解液槽120內之第一電解液121中。接著,在電流密度為6.0A/dm2 、第一電解液121之溫度為40℃之製造條件下使電解滾筒110旋轉令陽極與陰極之間流通20分鐘的電流,藉此於電解滾筒110之表面上電沉積金屬。As shown in FIG. 4A, the electrolytic drum 110 is used as a cathode, and the gantry having an arcuate cross section with respect to the electrolytic drum 110 is used as an anode, and the electrolytic drum 110 is immersed in the first electrolytic solution 121 in the electrolytic solution tank 120. Next, under the manufacturing conditions of a current density of 6.0 A/dm 2 and a temperature of the first electrolyte 121 of 40 ° C, the electrolytic drum 110 is rotated to cause a current between the anode and the cathode to flow for 20 minutes, thereby being used in the electrolytic drum 110. Electrodeposited metal on the surface.

接著將析出至電解滾筒110表面上之金屬從電解滾筒110剝離而連續獲得圖3A所示之金屬基材13。使所得金屬基材13在10%硫酸中、溫度為30℃、電流密度為5A/dm2 且處理時間為20秒之條件下利用陰極處理清潔表面後,以純水洗淨20秒。Next, the metal deposited on the surface of the electrolytic drum 110 is peeled off from the electrolytic drum 110 to continuously obtain the metal base material 13 shown in Fig. 3A. The obtained metal substrate 13 was cleaned by a cathode treatment in a 10% sulfuric acid at a temperature of 30 ° C, a current density of 5 A/dm 2 and a treatment time of 20 seconds, and then washed with pure water for 20 seconds.

測定洗淨後之金屬基材13的表面性狀及厚度。金屬基材13之厚度為17μm。金屬基材13之不與電解滾筒110相接之側的第二主面B13之表面性狀,Str得0.733,Rz得1.383μm。金屬基材13之與電解滾筒110相接之側的第一主面T13(光面)之表面性狀,Str得0.261,Rz得1.637μm。
(剝離層12)
The surface properties and thickness of the metal substrate 13 after washing were measured. The metal substrate 13 has a thickness of 17 μm. The surface property of the second main surface B13 of the side of the metal base material 13 which is not in contact with the electrolytic drum 110 is such that Str is 0.733 and Rz is 1.383 μm. The surface property of the first main surface T13 (light surface) on the side of the metal substrate 13 that is in contact with the electrolytic drum 110 is such that Str is 0.261 and Rz is 1.637 μm.
(peeling layer 12)

使金屬基材13浸漬於含有硫酸鎳6水合物30g/L、Na2 MoO4 2水合物3g/L、檸檬酸鈉40g/L之剝離層形成用電解液中,在溫度為30℃、pH為6、電流密度為2A/dm2 、處理時間為20秒之條件下進行電解,於金屬基材13之第二主面B13上形成剝離層12後,以流水洗淨20秒。藉此獲得圖3B所示之第一積層板15。剝離層12之第一主面T12側主要含有鎳及鉬之合金,第二主面B12側則主要含有鎳及鉬之氧化物。
(薄膜金屬箔11)
The metal substrate 13 was immersed in 30g / L, Na 2 MoO 4 2 dihydrate 3g / L, sodium citrate 40g / L of the release layer comprising nickel sulfate 6 hydrate forming electrolyte at a temperature of 30 ℃, pH Electrolysis was carried out under the conditions of a current density of 2 A/dm 2 and a treatment time of 20 seconds. The release layer 12 was formed on the second main surface B13 of the metal substrate 13, and then washed with running water for 20 seconds. Thereby, the first laminate 15 shown in Fig. 3B is obtained. The first main surface T12 side of the peeling layer 12 mainly contains an alloy of nickel and molybdenum, and the second main surface B12 side mainly contains an oxide of nickel and molybdenum.
(film metal foil 11)

將第一積層板15浸漬於含有焦磷酸銅80g/L、焦磷酸鉀320g/L、氨水2ml/L之焦磷酸銅鍍敷浴中,在溫度為40℃、pH為8.5、電流密度為2.0A/dm2 、處理時間為20秒之條件下進行陰極處理後,以純水洗淨20秒。The first laminate 15 was immersed in a copper pyrophosphate plating bath containing copper pyrophosphate 80 g/L, potassium pyrophosphate 320 g/L, and ammonia water 2 ml/L at a temperature of 40 ° C, a pH of 8.5, and a current density of 2.0. After performing a cathodic treatment with A/dm 2 and a treatment time of 20 seconds, it was washed with pure water for 20 seconds.

接著,將第一積層板15浸漬於含有硫酸銅5水合物160g/L、硫酸100g/L、明膠(重量平均分子量5000)15ppm、氯離子5ppm之薄膜金屬箔形成用電解液中,在溫度為40℃、pH為7、電流密度為3.5A/dm2 、處理時間為150秒之條件下進行電解後,於剝離層12之第二主面B12上形成薄膜金屬箔11。藉此獲得圖3C所示之第二積層板16。Next, the first laminate 15 is immersed in an electrolyte solution for forming a thin film metal foil containing 160 g/L of copper sulfate pentahydrate, 100 g/L of sulfuric acid, gelatin (weight average molecular weight: 5000) of 15 ppm, and chloride ion of 5 ppm. After electrolysis was carried out at 40 ° C, a pH of 7, a current density of 3.5 A/dm 2 , and a treatment time of 150 seconds, a thin film metal foil 11 was formed on the second main surface B12 of the peeling layer 12. Thereby, the second laminate 16 shown in Fig. 3C is obtained.

接著,以流水將第二積層板16洗淨20秒。測定洗淨後之第二積層板16之薄膜金屬箔11的厚度,得2μm。接著對第二積層板16進行防鏽處理與矽烷耦合劑處理。
(降低反射層14)
Next, the second laminate 16 was washed with running water for 20 seconds. The thickness of the film metal foil 11 of the second laminate 16 after the washing was measured to obtain 2 μm. Next, the second laminate 16 is subjected to rustproof treatment and decane coupling agent treatment.
(reducing the reflective layer 14)

將第二積層板16浸漬於含有硫酸銅5水合物30g/L、硫酸20g/L之電解液,在溫度為80℃、電流密度為7A/dm2 、處理時間為20秒之條件下進行電解,於薄膜金屬箔11之第二主面B11上形成銅之粗化層。接下來,將形成有銅之粗化層的第二積層板16浸漬於含有重鉻酸鈉2水合物3.5g/L之鉻酸鹽浴中,在溫度為30℃、pH為4.0、電流密度為0.5A/dm2 、處理時間為2.5秒之條件下進行鉻酸鹽處理。藉此獲得圖3D所示之附金屬基材之薄膜金屬箔10。The second laminate 16 was immersed in an electrolytic solution containing 30 g/L of copper sulfate monohydrate and 20 g/L of sulfuric acid, and electrolyzed at a temperature of 80 ° C, a current density of 7 A/dm 2 , and a treatment time of 20 seconds. A roughened layer of copper is formed on the second main surface B11 of the thin film metal foil 11. Next, the second laminate 16 on which the copper rough layer was formed was immersed in a chromate bath containing sodium dichromate 2 hydrate 3.5 g/L at a temperature of 30 ° C, a pH of 4.0, and a current density. The chromate treatment was carried out under conditions of 0.5 A/dm 2 and a treatment time of 2.5 seconds. Thereby, the film metal foil 10 with the metal substrate shown in Fig. 3D is obtained.

接著,從附金屬基材之薄膜金屬箔10剝離金屬基材13後,用SEM觀察其剝離面。剝離金屬基材13時,剝離層12隨金屬基材13一起從薄膜金屬箔11剝離了。將從附金屬基材之薄膜金屬箔10剝離金屬基材13後,作為薄膜金屬箔11側之剝離面的薄膜金屬箔11之第一主面T11的SEM影像(倍率:1000倍)顯示於圖7A。
[製作單面覆金屬之透明基材材料20S]
Next, the metal base material 13 was peeled off from the film metal foil 10 with a metal base material, and the peeling surface was observed by SEM. When the metal base material 13 is peeled off, the peeling layer 12 is peeled off from the film metal foil 11 along with the metal base material 13. The SEM image (magnification: 1000 times) of the first main surface T11 of the thin film metal foil 11 as the peeling surface on the side of the thin film metal foil 11 is shown in the figure after the metal base material 13 is peeled off from the metal foil 10 of the metal base material. 7A.
[Production of single-sided metal-coated transparent substrate material 20S]

就透明基材21準備了高透明PET膜(東洋紡股份有限公司製造之「COSMOSHINE A4300」,厚度:100μm)。於透明基材21之第一主面T21上以3g/m2 之塗佈量塗佈以下述組成調製所得透明接著劑(胺甲酸乙酯樹脂)後,在100℃之環境下保持5分鐘使其乾燥而形成厚度7μm之第一透明接著劑層22AU。藉此獲得圖8A所示之單面附透明接著劑層之透明基材23S。
(透明接著劑之組成)
主劑:TOYO INK CO., LTD.製造之「Dynaleo VA-3020」
硬化劑:TOYO INK CO., LTD.製造之「Dynaleo HD-701」
質量比:主劑/硬化劑=100/7
A highly transparent PET film ("COSMOSHINE A4300" manufactured by Toyobo Co., Ltd., thickness: 100 μm) was prepared for the transparent substrate 21. The transparent adhesive (urethane resin) prepared by the following composition was applied onto the first main surface T21 of the transparent substrate 21 at a coating amount of 3 g/m 2 , and then kept at 100 ° C for 5 minutes. It was dried to form a first transparent adhesive layer 22AU having a thickness of 7 μm. Thereby, the transparent substrate 23S having the one-side transparent adhesive layer shown in Fig. 8A was obtained.
(composition of transparent adhesive)
Main agent: "Dynaleo VA-3020" manufactured by TOYO INK CO., LTD.
Hardener: "Dynaleo HD-701" manufactured by TOYO INK CO., LTD.
Mass ratio: main agent / hardener = 100/7

使單面附透明接著劑層之透明基材23S的第一透明接著劑層22AU與附金屬基材之薄膜金屬箔10之降低反射層14如圖8B所示般相對向後,將單面附透明接著劑層之透明基材23S及附金屬基材之薄膜金屬箔10疊合貼合。將該呈貼合之狀態在60℃之環境下保持5日,使第一透明接著劑層22AU硬化做成第一透明接著層22A。藉此獲得圖8C所示之單面覆金屬之透明基材材料20S。
[製作單面透視型電極用積層板30S]
The first transparent adhesive layer 22AU of the transparent substrate 23S with the transparent adhesive layer on one side and the lower reflective layer 14 of the thin metal foil 10 with the metal substrate are opposite to each other as shown in FIG. 8B, and the single side is transparent. The transparent substrate 23S of the subsequent layer and the thin film metal foil 10 with the metal substrate are laminated and bonded. The bonded state was maintained at 60 ° C for 5 days, and the first transparent adhesive layer 22 AU was cured to form the first transparent adhesive layer 22A. Thereby, the single-sided metal-clad transparent substrate material 20S shown in Fig. 8C is obtained.
[Production of single-sided see-through electrode laminate board 30S]

從單面覆金屬之透明基材材料20S剝離金屬基材13及剝離層12。藉此獲得圖8D所示之單面透視型電極用積層板30S。此時,剝離金屬基材13時,剝離層12隨金屬基材13一起從薄膜金屬箔11剝離了。所得單面透視型電極用積層板30S之薄膜金屬箔11之第一主面T11的表面性狀,Str得0.781,Rz得1.630μm。
[製作單面透視型電極素材]
The metal base material 13 and the peeling layer 12 are peeled off from the single-sided metal-clad transparent base material 20S. Thereby, the single-layer see-through type electrode laminated board 30S shown in FIG. 8D is obtained. At this time, when the metal base material 13 is peeled off, the peeling layer 12 is peeled off from the film metal foil 11 along with the metal base material 13. The surface property of the first main surface T11 of the thin film metal foil 11 of the laminated plate 30S for single-sided see-through electrodes was obtained, and Str was 0.781 and Rz was 1.630 μm.
[Making single-sided see-through electrode material]

利用光刻法去除單面透視型電極用積層板30S之薄膜金屬箔11及降低反射層14之一部分後,獲得具有線寬/線距(Line/Space)(L/S)=5μm/1000μm之格狀網目圖案之配線圖案層的單面透視型電極素材。所得單面透視型電極素材之配線圖案層的截面長度L1為291.235μm,L1/L2為1.06。且高低差為1.512μm。用SEM觀察單面透視型電極素材之配線圖案層。將配線圖案層之SEM影像(倍率:2000倍)顯示於圖9A。確認斷線檢查用配線圖案層42C有無斷線的結果,得0.0個/m2
[變更例1]
After the film metal foil 11 of the single-sided see-through electrode laminate 30S and a portion of the reflective layer 14 are removed by photolithography, a line/space (L/S)=5 μm/1000 μm is obtained. Single-sided see-through electrode material of a wiring pattern layer of a lattice mesh pattern. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 291.235 μm, and L1/L2 was 1.06. And the height difference is 1.512μm. The wiring pattern layer of the single-sided see-through electrode material was observed by SEM. The SEM image (magnification: 2000 times) of the wiring pattern layer is shown in FIG. 9A. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 0.0 pieces/m 2 were obtained .
[Modification 1]

於實施例1中之透明基材21使用環烯烴薄膜(日本ZEON製ZF-160(厚度100μm))來替代高透明PET膜,並對兩面施行電暈放電處理,且塗敷透明接著劑(胺甲酸乙酯樹脂),除此以外以與實施例1同樣方式製得單面透視型電極用積層板30S。再從所得單面透視型電極用積層板30S製得單面透視型電極素材。所得單面透視型電極用積層板30S之薄膜金屬箔11之第一主面T11的表面性狀,Str得0.890,Rz得2.202μm。所得單面透視型電極素材之配線圖案層的截面長度L1為296.500μm,L1/L2為1.08。且高低差為1.797μm。確認斷線檢查用配線圖案層42C有無斷線的結果,得0.0個/m2 。又,於圖2C所示之影像顯示裝置53使用液晶顯示面板,對器件50就實施例1中所得單面透視型電極素材隔著偏光太陽眼鏡確認畫面的結果,可觀察到虹斑,但將實施例1之單面透視型電極素材換成變更例1中所得單面透視型電極素材後,則未觀察到虹斑。
[變更例2]
In the transparent substrate 21 of Example 1, a cycloolefin film (ZF-160 (thickness: 100 μm) manufactured by ZEON, Japan) was used in place of the highly transparent PET film, and both surfaces were subjected to corona discharge treatment, and a transparent adhesive (amine) was applied. A single-sided see-through electrode laminate 30S was obtained in the same manner as in Example 1 except that the ethyl formate resin was used. Further, a single-sided see-through type electrode material was produced from the obtained single-sided see-through electrode laminate 30S. The surface property of the first main surface T11 of the thin film metal foil 11 of the laminated plate 30S for single-sided see-through electrodes was obtained, and Str was 0.890 and Rz was 2.202 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 296.500 μm, and L1/L2 was 1.08. And the height difference is 1.797 μm. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 0.0 pieces/m 2 were obtained . Further, the image display device 53 shown in FIG. 2C uses a liquid crystal display panel, and the device 50 can observe the rainbow light spot on the single-sided see-through electrode material obtained in the first embodiment, and the rainbow spot can be observed. After the single-sided see-through type electrode material of Example 1 was replaced with the single-sided see-through type electrode material obtained in Modification 1, no rainbow spot was observed.
[Modification 2]

除了於實施例1中之透明基材21使用超雙折射聚酯薄膜(東洋紡製SRF(厚度80μm))來替代高透明PET膜以外,以與實施例1同樣方式製得單面透視型電極用積層板30S。再從所得單面透視型電極用積層板30S製得單面透視型電極素材。所得單面透視型電極用積層板30S之薄膜金屬箔11之第一主面T11的表面性狀,Str得0.844,Rz得2.111μm。所得單面透視型電極素材之配線圖案層的截面長度L1為289.654μm,L1/L2為1.06。且高低差為1.894μm。確認斷線檢查用配線圖案層42C有無斷線的結果,得0.0個/m2 。又,於圖2C所示之影像顯示裝置53使用液晶顯示面板,對器件50就實施例1之單面透視型電極素材隔著偏光太陽眼鏡確認畫面的結果,可觀察到虹斑,而且根據觀看畫面的角度可觀察到黑視現象,但將實施例1之單面透視型電極素材換成變更例2之單面透視型電極素材後,則不論是虹斑或黑視現象兩者皆未觀察到。
[實施例2]
A single-sided see-through electrode was produced in the same manner as in Example 1 except that a super-birefringent polyester film (SRF (thickness: 80 μm) manufactured by Toyobo Co., Ltd.) was used instead of the highly transparent PET film in the transparent substrate 21 of the first embodiment. Laminate 30S. Further, a single-sided see-through type electrode material was produced from the obtained single-sided see-through electrode laminate 30S. The surface property of the first main surface T11 of the thin film metal foil 11 of the laminated plate 30S for single-sided see-through electrodes was obtained, and Str was 0.844 and Rz was 2.111 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 289.654 μm, and L1/L2 was 1.06. And the height difference is 1.894 μm. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 0.0 pieces/m 2 were obtained . Further, the image display device 53 shown in FIG. 2C uses a liquid crystal display panel to observe the screen of the device 50 with respect to the single-sided see-through type electrode material of the first embodiment through the polarized sunglasses, and can observe the rainbow spot, and according to the viewing. The blackout phenomenon can be observed at the angle of the screen. However, when the single-sided see-through electrode material of the first embodiment is replaced with the single-sided see-through electrode material of the second modification, neither the rainbow spot nor the blackout phenomenon is observed. To.
[Embodiment 2]

在製作金屬基材13時,係將第一電解液121之組成設定成含有硫酸銅5水合物270g/L、硫酸90g/L、氯20質量ppm、聚乙二醇(平均分子量1000)10ppm、3-巰基-1-丙磺酸5ppm之組成,並將電鍍條件設定成電流密度為50A/dm2 、第一電解液121之溫度為40℃、鍍覆時間為2分鐘之條件,除此以外以與實施例1同樣方式而製得單面透視型電極用積層板30S,並從所得單面透視型電極用積層板30S製得單面透視型電極素材。所得單面透視型電極用積層板30S之薄膜金屬箔11之第一主面T11的表面性狀,Str得0.634,Rz得1.383μm。所得單面透視型電極素材之配線圖案層的截面長度L1為286.818μm,L1/L2為1.05。且高低差為1.397μm。確認斷線檢查用配線圖案層42C有無斷線的結果,得3.3個/m2
[實施例3]
When the metal substrate 13 is produced, the composition of the first electrolyte solution 121 is set to contain 270 g/L of copper sulfate pentahydrate, 90 g/L of sulfuric acid, 20 mass ppm of chlorine, and polyethylene glycol (average molecular weight of 1000) of 10 ppm. a composition of 5 ppm of 3-mercapto-1-propanesulfonic acid, and plating conditions were set to a current density of 50 A/dm 2 , a temperature of the first electrolyte 121 of 40 ° C, and a plating time of 2 minutes, in addition to In the same manner as in the first embodiment, a single-sided see-through electrode laminate 30S was obtained, and a single-sided see-through type electrode material was obtained from the obtained single-sided see-through electrode laminate 30S. The surface property of the first main surface T11 of the thin film metal foil 11 of the laminated plate 30S for single-sided see-through electrodes was obtained, and Str was 0.634 and Rz was 1.383 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 286.818 μm, and L1/L2 was 1.05. And the height difference is 1.397μm. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 3.3 pieces/m 2 were obtained .
[Example 3]

在製作金屬基材13時,係將第一電解液121之組成設定成含有硫酸銅5水合物280g/L、硫酸90g/L、氯10質量ppm、聚乙二醇(平均分子量1000):10ppm、3-巰基-1-丙磺酸:1ppm之組成,並將電鍍條件設定成電流密度為50A/dm2 、第一電解液121之溫度為40℃、鍍覆時間為2分鐘之條件,除此以外以與實施例1同樣方式而製得單面透視型電極用積層板30S,並從所得單面透視型電極用積層板30S製得單面透視型電極素材。所得單面透視型電極用積層板30S之薄膜金屬箔11之第一主面T11的表面性狀,Str得0.856,Rz得2.199μm。所得單面透視型電極素材之配線圖案層的截面長度L1為293.647μm,L1/L2為1.07。且高低差為1.807μm。確認斷線檢查用配線圖案層42C有無斷線的結果,得0.0個/m2
[比較例1]
[製作附金屬基材之薄膜金屬箔203]
(金屬基材210)
When the metal substrate 13 is produced, the composition of the first electrolyte solution 121 is set to contain 280 g/L of copper sulfate pentahydrate, 90 g/L of sulfuric acid, 10 mass ppm of chlorine, and polyethylene glycol (average molecular weight of 1000): 10 ppm. , 3-mercapto-1-propanesulfonic acid: a composition of 1 ppm, and the plating conditions were set to a current density of 50 A/dm 2 , the temperature of the first electrolyte 121 was 40 ° C, and the plating time was 2 minutes, except In the same manner as in the first embodiment, a single-sided see-through electrode laminate 30S was obtained, and a single-sided see-through type electrode material was obtained from the obtained single-sided see-through electrode laminate 30S. The surface property of the first main surface T11 of the thin film metal foil 11 of the laminated plate 30S for single-sided see-through electrodes was obtained, and Str was 0.856 and Rz was 2.199 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 293.647 μm, and L1/L2 was 1.07. And the height difference is 1.807 μm. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 0.0 pieces/m 2 were obtained .
[Comparative Example 1]
[Production of film metal foil 203 with metal substrate]
(metal substrate 210)

除了將第一電解液121之組成設定成含有硫酸銅5水合物160g/L、硫酸100g/L、氯離子5ppm之組成以外,以與實施例1同樣方式連續製得圖10A所示之金屬基材210。The metal base shown in Fig. 10A was continuously produced in the same manner as in Example 1 except that the composition of the first electrolytic solution 121 was changed to a composition containing 160 g/L of copper sulfate pentahydrate, 100 g/L of sulfuric acid, and 5 ppm of chloride ions. Material 210.

使所得金屬基材210在10%硫酸中、溫度為30℃、電流密度為5A/dm2 且處理時間為20秒之條件下利用陰極處理清潔表面後,以純水洗淨20秒。The obtained metal substrate 210 was cleaned with pure water in a 10% sulfuric acid at a temperature of 30 ° C, a current density of 5 A/dm 2 and a treatment time of 20 seconds, and then washed with pure water for 20 seconds.

測定洗淨後之金屬基材210的表面性狀及厚度。金屬基材210之厚度得2.1μm。金屬基材210之與電解滾筒110相接之側的第一主面T210(光面)之表面性狀,Str得0.482,Rz得1.713μm。
(剝離層220)
The surface properties and thickness of the washed metal substrate 210 were measured. The thickness of the metal substrate 210 was 2.1 μm. The surface property of the first main surface T210 (light surface) on the side of the metal substrate 210 that is in contact with the electrolytic drum 110 is such that Str is 0.482 and Rz is 1.713 μm.
(peeling layer 220)

於金屬基材210之第一主面T210上以與實施例1相同條件形成剝離層220後,以流水洗淨20秒。藉此製得圖10B所示之第三積層板201。
(薄膜金屬箔230)
The peeling layer 220 was formed on the first main surface T210 of the metal substrate 210 under the same conditions as in Example 1, and then washed with running water for 20 seconds. Thereby, the third laminate 201 shown in Fig. 10B is obtained.
(film metal foil 230)

於剝離層220之第一主面T220上以與實施例1相同條件形成薄膜金屬箔230。藉此製得圖10C所示之第四積層板202。The thin film metal foil 230 was formed on the first main surface T220 of the peeling layer 220 under the same conditions as in the first embodiment. Thereby, the fourth laminate 202 shown in Fig. 10C is obtained.

接著以流水將第四積層板202洗淨20秒。測定洗淨後之第四積層板202之薄膜金屬箔230的厚度,得2μm。
(防鏽處理層及矽烷耦合處理層)
The fourth laminate 202 was then washed with running water for 20 seconds. The thickness of the film metal foil 230 of the fourth laminate 202 after washing was measured to obtain 2 μm.
(rustproof treatment layer and decane coupling treatment layer)

以與實施例1相同條件進行防鏽處理與矽烷耦合劑處理。
(降低反射層240)
The rustproof treatment and the decane coupling agent treatment were carried out under the same conditions as in Example 1.
(reducing the reflective layer 240)

於薄膜金屬箔230之第一主面T230上以與實施例1相同條件形成薄Ni層。藉此獲得圖10D所示之附金屬基材之薄膜金屬箔203。A thin Ni layer was formed on the first main surface T230 of the thin film metal foil 230 under the same conditions as in Example 1. Thereby, the film metal foil 203 with the metal substrate shown in Fig. 10D is obtained.

所得附金屬基材之薄膜金屬箔203之降低反射層240之第一主面T240的表面性狀,Str得0.380,Rz得1.657μm。The film metal foil 203 of the obtained metal substrate was used to lower the surface property of the first main surface T240 of the reflective layer 240, and Str was 0.380 and Rz was 1.657 μm.

從附金屬基材之薄膜金屬箔203剝離金屬基材210後,用SEM觀察其剝離面。剝離金屬基材210時,剝離層220隨金屬基材210一起從薄膜金屬箔230剝離了。將從附金屬基材之薄膜金屬箔203剝離金屬基材210後,作為薄膜金屬箔230側之剝離面的薄膜金屬箔230之第二主面B230的SEM影像(倍率:1000倍)顯示於圖7B。
[製作單面覆金屬之透明基材材料204]
After peeling off the metal base material 210 from the film metal foil 203 with a metal base material, the peeling surface was observed by SEM. When the metal substrate 210 is peeled off, the peeling layer 220 is peeled off from the film metal foil 230 along with the metal substrate 210. The SEM image (magnification: 1000 times) of the second main surface B230 of the thin film metal foil 230 which is the peeling surface of the film metal foil 230 side is shown in the figure after peeling the metal base material 210 from the metal foil 203 of the metal base material. 7B.
[Production of single-sided metal-clad transparent substrate material 204]

以與實施例1同樣方式製得圖10E所示之單面附透明接著劑層之透明基材23S。A transparent substrate 23S having a single-sided transparent adhesive layer as shown in Fig. 10E was obtained in the same manner as in Example 1.

使單面附透明接著劑層之透明基材23S的第一透明接著劑層22AU與附金屬基材之薄膜金屬箔203之降低反射層240如圖10F所示般相對向後,將單面附透明接著劑層之透明基材23S及附金屬基材之薄膜金屬箔203疊合貼合。將該呈貼合之狀態在60℃之環境下保持5日,使第一透明接著劑層22AU硬化做成第一透明接著層22A。藉此獲得圖10G所示之單面覆金屬之透明基材材料204。The first transparent adhesive layer 22AU of the transparent substrate 23S with the transparent adhesive layer on one side and the lower reflective layer 240 of the thin metal foil 203 of the metal-attached substrate are opposite to each other as shown in FIG. 10F, and the single side is transparent. The transparent substrate 23S of the subsequent layer and the film metal foil 203 with the metal substrate are laminated and bonded. The bonded state was maintained at 60 ° C for 5 days, and the first transparent adhesive layer 22 AU was cured to form the first transparent adhesive layer 22A. Thereby, the single-sided metal-clad transparent substrate material 204 shown in Fig. 10G is obtained.

接著,從單面覆金屬之透明基材材料204剝離金屬基材210及剝離層220。藉此獲得圖10H所示之單面透視型電極用積層板200。此時,剝離金屬基材210時,剝離層220隨金屬基材210一起從薄膜金屬箔230剝離了。所得單面透視型電極用積層板200之薄膜金屬箔230之第二主面B230的表面性狀,Str得0.461,Rz得2.449μm。
[製作單面透視型電極素材]
Next, the metal base material 210 and the peeling layer 220 are peeled off from the single-sided metal-clad transparent base material 204. Thereby, the single-sided see-through electrode laminate board 200 shown in FIG. 10H is obtained. At this time, when the metal base material 210 is peeled off, the peeling layer 220 is peeled off from the film metal foil 230 along with the metal base material 210. The surface property of the second main surface B230 of the film metal foil 230 of the laminated plate 200 for a single-sided see-through electrode was obtained, and Str was 0.461 and Rz was 2.449 μm.
[Making single-sided see-through electrode material]

以與實施例1同樣方式利用光刻法去除單面透視型電極用積層板200之薄膜金屬箔230及降低反射層240之一部分後,獲得具有線寬/線距(L/S)=5μm/1000μm之格狀網目圖案之配線圖案層的單面透視型電極素材。所得單面透視型電極素材之配線圖案層的截面長度L1為316.280μm,L1/L2為1.15。且高低差為2.409μm。用SEM觀察單面透視型電極素材之配線圖案層。將配線圖案層之SEM影像(倍率:2000倍)顯示於圖9B。確認斷線檢查用配線圖案層42C有無斷線的結果,得10.0個/m2
[比較例2]
After the film metal foil 230 of the single-sided see-through electrode laminate 200 and one portion of the reflective layer 240 are removed by photolithography in the same manner as in the first embodiment, a line width/line pitch (L/S) = 5 μm/ is obtained. Single-sided see-through electrode material of a wiring pattern layer of a lattice pattern of 1000 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 316.280 μm, and L1/L2 was 1.15. And the height difference is 2.409μm. The wiring pattern layer of the single-sided see-through electrode material was observed by SEM. The SEM image (magnification: 2000 times) of the wiring pattern layer is shown in FIG. 9B. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 10.0 pieces/m 2 were obtained .
[Comparative Example 2]

變更電解滾筒110之研磨條件將金屬基材210之第一主面T210(光面)之Str設為0.348、Rz設為1.607μm,除此以外以與比較例1同樣方式製得單面透視型電極用積層板200,並從所得單面透視型電極用積層板200製得單面透視型電極素材。所得單面透視型電極用積層板200之薄膜金屬箔230之第二主面B230的表面性狀,Str得0.380,Rz得1.657μm。所得單面透視型電極素材之配線圖案層的截面長度L1為313.110μm,L1/L2為1.14。且高低差為2.672μm。確認斷線檢查用配線圖案層42C有無斷線的結果,得6.6個/m2
[比較例3]
In the same manner as in Comparative Example 1, a single-sided see-through type was produced in the same manner as in Comparative Example 1, except that the polishing conditions of the electrolytic drum 110 were changed to be the same as in Comparative Example 1 except that Str of the first main surface T210 (light surface) of the metal substrate 210 was 0.348 and Rz was 1.607 μm. The electrode laminated board 200 was used to obtain a single-sided see-through type electrode material from the obtained single-sided see-through electrode laminated board 200. The surface property of the second main surface B230 of the film metal foil 230 of the laminated plate 200 for a single-sided see-through electrode was obtained, and Str was 0.380 and Rz was 1.657 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through electrode material was 313.110 μm, and L1/L2 was 1.14. And the height difference is 2.672μm. As a result of confirming whether or not the disconnection inspection wiring pattern layer 42C was broken, 6.6 pieces/m 2 were obtained .
[Comparative Example 3]

變更電解滾筒110之研磨條件將金屬基材210之第一主面T210(光面)之Str設為0.220、Rz設為2.351μm,除此以外以與比較例1同樣方式製得單面透視型電極用積層板200,並從所得單面透視型電極用積層板200製得單面透視型電極素材。所得單面透視型電極用積層板200之薄膜金屬箔230之第二主面B230的表面性狀,Str得0.237,Rz得1.632μm。所得單面透視型電極素材之配線圖案層的截面長度L1為309.559μm,L1/L2為1.013。且高低差為3.826μm。確認配線圖案層有無斷線的結果,得6.6個/m2
[比較例4]
In the same manner as in Comparative Example 1, a single-sided see-through type was produced in the same manner as in Comparative Example 1, except that the polishing conditions of the electrolytic drum 110 were changed so that the Str of the first main surface T210 (light surface) of the metal base material 210 was 0.220 and Rz was 2.351 μm. The electrode laminated board 200 was used to obtain a single-sided see-through type electrode material from the obtained single-sided see-through electrode laminated board 200. The surface property of the second main surface B230 of the thin film metal foil 230 of the laminated plate 200 for single-sided see-through electrodes was obtained, and Str was 0.237 and Rz was 1.632 μm. The cross-sectional length L1 of the wiring pattern layer of the obtained single-sided see-through type electrode material was 309.559 μm, and L1/L2 was 1.013. And the height difference is 3.826μm. The result of confirming whether or not the wiring pattern layer was broken was 6.6 pieces/m 2 .
[Comparative Example 4]

製作金屬基材13時,除了將<電鍍條件>之鍍覆時間改為40分鐘以外,以與實施例1同樣方式製得單面透視型電極用積層板200。以與實施例1同樣方式利用光刻法去除所得單面透視型電極用積層板200之薄膜金屬箔230及降低反射層240之一部分後,未能形成線寬/線距(L/S)=5μm/1000μm之格狀網目圖案的配線圖案層。也無法形成斷線檢查用配線圖案層42C。所得單面透視型電極用積層板200之薄膜金屬箔230之第二主面B230的表面性狀,Str得0.728,Rz得3.740μm。
[比較例5]
When the metal substrate 13 was produced, a single-sided see-through electrode laminate board 200 was produced in the same manner as in Example 1 except that the plating time of <plating conditions> was changed to 40 minutes. After the film metal foil 230 of the obtained single-sided see-through electrode laminate 200 and a portion of the reflection-reducing layer 240 were removed by photolithography in the same manner as in Example 1, the line width/space distance (L/S) was not formed. A wiring pattern layer of a lattice pattern of 5 μm/1000 μm. It is also impossible to form the wire harness inspection wiring pattern layer 42C. The surface property of the second main surface B230 of the thin film metal foil 230 of the laminated plate 200 for single-sided see-through electrodes was obtained, and Str was 0.728 and Rz was 3.740 μm.
[Comparative Example 5]

除了變更電解滾筒110之研磨條件,令金屬基材210之第一主面T210(光面)之Str為0.380、Rz為3.835μm以外,以與比較例1同樣方式製得單面透視型電極用積層板200。以與實施例1同樣方式利用光刻法去除所得單面透視型電極用積層板200之薄膜金屬箔230及降低反射層240之一部分後,未能形成線寬/線距(L/S)=5μm/1000μm之格狀網目圖案的配線圖案層。也無法形成斷線檢查用配線圖案層42C。所得單面透視型電極用積層板200之薄膜金屬箔230之第二主面B230的表面性狀,Str得0.325,Rz得3.890μm。A single-sided see-through electrode was produced in the same manner as in Comparative Example 1, except that the polishing conditions of the electrolytic drum 110 were changed so that the first main surface T210 (light surface) of the metal substrate 210 had a Str of 0.380 and an Rz of 3.835 μm. The laminate board 200. After the film metal foil 230 of the obtained single-sided see-through electrode laminate 200 and a portion of the reflection-reducing layer 240 were removed by photolithography in the same manner as in Example 1, the line width/space distance (L/S) was not formed. A wiring pattern layer of a lattice pattern of 5 μm/1000 μm. It is also impossible to form the wire harness inspection wiring pattern layer 42C. The surface property of the second main surface B230 of the film metal foil 230 of the laminated plate 200 for a single-sided see-through electrode was obtained, and Str was 0.325 and Rz was 3.890 μm.

將單面透視型電極用積層板30S之第一主面T11及單面透視型電極用積層板200之第二主面B230的Str及Rz,以及單面透視型電極素材之配線圖案層的截面長度、高低差及有無斷線之測定結果列於表1。

[表1]

[參考例]
Str and Rz of the first main surface T11 of the laminated plate 30S for single-sided see-through electrodes and the second main surface B230 of the laminated plate 200 for single-sided see-through electrodes, and a cross section of the wiring pattern layer of the single-sided see-through type electrode material The results of the measurement of length, height difference and presence or absence of breakage are shown in Table 1.

[Table 1]

[Reference example]

按下列方式評估下述試料310之傳輸損失。The transmission loss of the sample 310 described below was evaluated in the following manner.

就試料310準備了高平滑銅箔(35)、一般銅箔(35)、高平滑銅箔(18)及一般銅箔(18)。將各試料310之銅箔厚度T310 、Str、Ra、Rz及截面長度L1列於表2。各試料310之兩面的表面性狀可評估為相同。截面長度L1之基準線102的長度L2為274.410μm。又,各試料之L1/L2,高平滑銅箔(35)得1.06,一般銅箔(35)得1.13,高平滑銅箔(18)得1.04,一般銅箔(18)得1.13。

[表2]
A high smooth copper foil (35), a general copper foil (35), a high smooth copper foil (18), and a general copper foil (18) were prepared for the sample 310. The copper foil thicknesses T 310 , Str, Ra, Rz and the cross-sectional length L1 of each sample 310 are shown in Table 2. The surface properties of both sides of each sample 310 can be evaluated as the same. The length L2 of the reference line 102 of the section length L1 is 274.410 μm. Further, the L1/L2 of each sample, the high smooth copper foil (35) was 1.06, the general copper foil (35) was 1.13, the high smooth copper foil (18) was 1.04, and the general copper foil (18) was 1.13.

[Table 2]

如圖11所示,以阻抗成為50Ω的方式以2片預浸體(厚度:0.06mm)包夾固定線寬W之短籤狀試料310後,於各預浸體表面配置銅箔320(厚度T320 :35μm),並將整體予以熱壓使預浸體硬化。藉此製得具有帶狀線之覆銅積層板300。至於試料310,係在絕緣層330(厚度T330:0.28mm)之厚度方向的中心位置嵌埋有試料310。線長為1m。該帶狀線之阻抗為50Ω。且試料310未施行黑色化處理。As shown in FIG. 11 , the short-stack sample 310 having the line width W is sandwiched by two prepregs (thickness: 0.06 mm) so that the impedance is 50 Ω, and then the copper foil 320 is disposed on the surface of each prepreg. T 320 : 35 μm), and the whole was heat-pressed to harden the prepreg. Thereby, a copper clad laminate 300 having a strip line is produced. As for the sample 310, a sample 310 is embedded in a center position in the thickness direction of the insulating layer 330 (thickness T330: 0.28 mm). The line length is 1m. The strip line has an impedance of 50 Ω. Further, the sample 310 was not subjected to blackening treatment.

在使最外層之銅箔320、320成為接地之狀態下,對試料310傳輸2.0GHz、3.5GHz或5.0GHz之交流電,並用KEYSIGHTTECHNOLOGIES公司製造之「N5230A 4埠 PNA-L網路分析器13.5/20GHz」測定傳輸損失。其結果列於表3及圖12。
[表3]
In the state where the outermost copper foils 320 and 320 are grounded, AC power of 2.0 GHz, 3.5 GHz, or 5.0 GHz is transmitted to the sample 310, and "N5230A 4 埠 PNA-L network analyzer 13.5/20 GHz manufactured by KEYSIGHTTECHNOLOGIES Co., Ltd. is used. Measure transmission loss. The results are shown in Table 3 and Figure 12.
[table 3]

從表3及圖12所示結果得出在各頻率下,高平滑銅箔(35)之傳輸損失與高平滑銅箔(18)之傳輸損失相同,一般銅箔(35)之傳輸損失與一般銅箔(18)之傳輸損失相同。此外,如圖12所示,隨著交流電之頻率增高,高平滑銅箔(35)或高平滑銅箔(18)之傳輸損失與一般銅箔(35)或一般銅箔(18)之傳輸損失間的差距也隨之加大。從該等結果可知,在2GHz以上之高頻帶區域中,試料310之銅箔厚度T310 不會對傳輸損失帶來巨大影響,然試料310之截面長度會大幅影響傳輸損失。此外亦知,截面長度較短之試料310的傳輸損失比截面長度較長之試料310更少。藉此,吾人推測由於本實施形態之薄膜金屬箔11之第一主面T11為高平滑面,且截面長度比習知之極薄銅箔更短,因此尤其在高頻帶區域中,傳輸損失較小。From the results shown in Table 3 and Figure 12, the transmission loss of the high smooth copper foil (35) is the same as the transmission loss of the high smooth copper foil (18) at each frequency, and the transmission loss of the general copper foil (35) is generally The transmission loss of the copper foil (18) is the same. Further, as shown in FIG. 12, as the frequency of the alternating current increases, the transmission loss of the high smooth copper foil (35) or the high smooth copper foil (18) and the transmission loss of the general copper foil (35) or the general copper foil (18) The gap between them has also increased. From these results, it is understood that the copper foil thickness T 310 of the sample 310 does not greatly affect the transmission loss in the high frequency band region of 2 GHz or more, and the cross-sectional length of the sample 310 greatly affects the transmission loss. Further, it is also known that the sample 310 having a short cross-sectional length has less transmission loss than the sample 310 having a longer cross-sectional length. Therefore, it is assumed that the first main surface T11 of the thin film metal foil 11 of the present embodiment has a high smooth surface and the cross-sectional length is shorter than that of the conventional ultra-thin copper foil, so that transmission loss is small particularly in a high-frequency band region. .

10‧‧‧附金屬基材之薄膜金屬箔10‧‧‧Metal foil with metal substrate

10A‧‧‧第一附金屬基材之薄膜金屬箔 10A‧‧‧First film metal foil with metal substrate

10B‧‧‧第二附金屬基材之薄膜金屬箔 10B‧‧‧Second film metal foil with metal substrate

11‧‧‧薄膜金屬箔 11‧‧‧Metal foil

11A‧‧‧第一薄膜金屬箔 11A‧‧‧First film metal foil

11B‧‧‧第二薄膜金屬箔 11B‧‧‧Second film metal foil

12‧‧‧剝離層 12‧‧‧ peeling layer

12A‧‧‧第一剝離層 12A‧‧‧First peeling layer

12B‧‧‧第二剝離層 12B‧‧‧Second stripping layer

13‧‧‧金屬基材 13‧‧‧Metal substrate

13A‧‧‧第一金屬基材 13A‧‧‧First metal substrate

13B‧‧‧第二金屬基材 13B‧‧‧Second metal substrate

14‧‧‧降低反射層 14‧‧‧Reducing the reflective layer

14A‧‧‧第一降低反射層 14A‧‧‧First reduced reflection layer

14B‧‧‧第二降低反射層 14B‧‧‧Second lower reflection layer

15‧‧‧第一積層板 15‧‧‧First laminate

16‧‧‧第二積層板 16‧‧‧Second laminate

20‧‧‧覆金屬之透明基材材料 20‧‧‧Metal coated transparent substrate material

20S‧‧‧單面覆金屬之透明基材材料 20S‧‧‧Single metal coated transparent substrate material

21‧‧‧透明基材 21‧‧‧Transparent substrate

22A‧‧‧第一透明接著層 22A‧‧‧First transparent layer

22B‧‧‧第二透明接著層 22B‧‧‧Second transparent layer

22AU‧‧‧第一透明接著劑層 22AU‧‧‧first transparent adhesive layer

22BU‧‧‧第二透明接著劑層 22BU‧‧‧Second transparent adhesive layer

23‧‧‧附透明接著劑層之透明基材 23‧‧‧Transparent substrate with transparent adhesive layer

23S‧‧‧單面附透明接著劑層之透明基材 23S‧‧‧ Transparent substrate with a transparent adhesive layer on one side

30‧‧‧透視型電極用積層板 30‧‧‧Surface electrode for laminated electrodes

30S‧‧‧單面透視型電極用積層板 30S‧‧‧ single-sided perspective electrode laminate

40‧‧‧透視型電極素材 40‧‧‧Perspective electrode material

40C‧‧‧斷線檢查用單面透視型電極素材 40C‧‧‧Single-sided perspective electrode material for wire break inspection

41‧‧‧降低反射圖案層 41‧‧‧Reducing the reflective pattern layer

41A‧‧‧第一降低反射圖案層 41A‧‧‧First reduced reflection pattern layer

41B‧‧‧第二降低反射圖案層 41B‧‧‧Second lower reflection pattern layer

42‧‧‧配線圖案層 42‧‧‧Wiring pattern layer

42A‧‧‧第一配線圖案層 42A‧‧‧First wiring pattern layer

42B‧‧‧第二配線圖案層 42B‧‧‧Second wiring pattern layer

42C‧‧‧斷線檢查用配線圖案層 42C‧‧‧Wiring pattern layer for wire break inspection

50‧‧‧器件 50‧‧‧Devices

51‧‧‧控制配線 51‧‧‧Control wiring

52‧‧‧外罩 52‧‧‧ Cover

53‧‧‧影像顯示裝置 53‧‧‧Image display device

100‧‧‧銅箔試料 100‧‧‧ copper foil sample

101‧‧‧截面曲線 101‧‧‧ section curve

102‧‧‧基準線 102‧‧‧ baseline

110‧‧‧電解滾筒 110‧‧‧ Electrolytic roller

120‧‧‧電解液槽 120‧‧‧ electrolyte tank

121‧‧‧第一電解液 121‧‧‧First electrolyte

130‧‧‧第二電解液槽 130‧‧‧Second electrolyte tank

131‧‧‧第二電解液 131‧‧‧Second electrolyte

200‧‧‧單面透視型電極用積層板 200‧‧‧Single-sided perspective electrode laminate

201‧‧‧第三積層板 201‧‧‧ Third laminate

202‧‧‧第四積層板 202‧‧‧fourth laminate

203‧‧‧附金屬基材之薄膜金屬箔 203‧‧‧Metal foil with metal substrate

204‧‧‧單面覆金屬之透明基材材料 204‧‧‧Single metal coated transparent substrate material

210‧‧‧金屬基材 210‧‧‧Metal substrate

220‧‧‧剝離層 220‧‧‧ peeling layer

230‧‧‧薄膜金屬箔 230‧‧‧Metal foil

240‧‧‧降低反射層 240‧‧‧Reducing the reflective layer

300‧‧‧覆銅積層板 300‧‧‧Copper laminate

310‧‧‧試料 310‧‧‧ samples

320‧‧‧銅箔 320‧‧‧ copper foil

330‧‧‧絕緣層 330‧‧‧Insulation

A22A‧‧‧第一外表部 A22A‧‧‧First Appearance

A22B‧‧‧第二外表部 A22B‧‧‧Second Appearance

A40A‧‧‧第一開口部 A40A‧‧‧ first opening

A40B‧‧‧第二開口部 A40B‧‧‧ second opening

B11‧‧‧薄膜金屬箔之第二主面 B11‧‧‧ second main surface of film metal foil

B12‧‧‧剝離層之第二主面 B12‧‧‧Second main surface of the peeling layer

B13‧‧‧金屬基材之第二主面 B13‧‧‧ second main surface of metal substrate

B14‧‧‧降低反射層之第二主面(圖1)、透明接著層之第二主面(圖2A)、第一附金屬基材之薄膜金屬箔之第一薄膜金屬箔側的面(圖5B)、第二附金屬基材之薄膜金屬箔之第二薄膜金屬箔側的面(圖5B) B14‧‧‧Reducing the second main surface of the reflective layer (Fig. 1), the second main surface of the transparent adhesive layer (Fig. 2A), and the surface of the first thin film metal foil of the first metal substrate with the metal substrate ( Figure 5B), the second film metal foil side of the second metal substrate with a metal foil (Fig. 5B)

B21‧‧‧透明基材之第二主面 B21‧‧‧Second main surface of transparent substrate

B23‧‧‧附透明接著劑層之透明基材之第二透明接著劑層的面 B23‧‧‧ Face of the second transparent adhesive layer of the transparent substrate with the transparent adhesive layer

B42‧‧‧第一/二配線圖案層之第二主面 B42‧‧‧Second main surface of the first/second wiring pattern layer

B230‧‧‧薄膜金屬箔之第二主面 B230‧‧‧ second main surface of film metal foil

Hp‧‧‧最大頂高度 Hp‧‧‧Maximum height

Hv‧‧‧最大底深度 Hv‧‧‧Maximum bottom depth

L1‧‧‧截面曲線長度 L1‧‧‧ section length

L2‧‧‧基準線長度 L2‧‧‧ baseline length

L3‧‧‧凸部平均高度 L3‧‧‧ average height of the convex part

T11‧‧‧薄膜金屬箔之第一主面 The first main face of T11‧‧‧ film metal foil

T12‧‧‧剝離層之第一主面 The first major surface of the T12‧‧‧ peeling layer

T13‧‧‧金屬基材之第一主面 The first main surface of the T13‧‧‧ metal substrate

T14‧‧‧降低反射層之第一主面 T14‧‧‧Reducing the first major surface of the reflective layer

T21‧‧‧透明基材之第一主面 The first major surface of the T21‧‧‧ transparent substrate

T23‧‧‧附透明接著劑層之透明基材之第一透明接著劑層的面 T23‧‧‧ Face of the first transparent adhesive layer of the transparent substrate with a transparent adhesive layer

T53‧‧‧顯示面 T53‧‧‧ display surface

T210‧‧‧金屬基材之第一主面 The first major surface of the T210‧‧‧ metal substrate

T220‧‧‧剝離層之第一主面 The first major surface of the T220‧‧‧ peeling layer

T230‧‧‧薄膜金屬箔之第一主面 The first main surface of T230‧‧‧ film metal foil

T240‧‧‧降低反射層之第一主面 T240‧‧‧Reducing the first major surface of the reflective layer

T310、T320‧‧‧銅箔厚度 T310, T320‧‧‧ copper foil thickness

T330‧‧‧絕緣層厚度 T330‧‧‧Insulation thickness

W‧‧‧線寬 W‧‧‧Line width

W1‧‧‧開口寬度 W1‧‧‧ opening width

圖1中,圖1A係本發明實施形態之附金屬基材之薄膜銅箔於厚度方向的概略截面圖。圖1B係本發明實施形態之覆金屬之透明基材材料於厚度方向的概略截面圖。Fig. 1 is a schematic cross-sectional view showing a thin film copper foil with a metal substrate according to an embodiment of the present invention in a thickness direction. Fig. 1B is a schematic cross-sectional view showing a metal-coated transparent substrate material in a thickness direction according to an embodiment of the present invention.

圖2中,圖2A係本發明實施形態之透視型電極用積層板於厚度方向的概略截面圖。圖2B係本發明實施形態之透視型電極素材於厚度方向的概略截面圖。圖2C係本發明實施形態之器件於厚度方向的概略截面圖。Fig. 2 is a schematic cross-sectional view showing a laminated plate for a see-through electrode according to an embodiment of the present invention in the thickness direction. Fig. 2B is a schematic cross-sectional view showing a perspective type electrode material according to an embodiment of the present invention in a thickness direction. Fig. 2C is a schematic cross-sectional view showing the device in the thickness direction according to the embodiment of the present invention.

圖3中,圖3A~圖3D係顯示本發明實施形態之附金屬基材之薄膜銅箔之製造方法各步驟的概略說明圖。3A to 3D are schematic explanatory views showing respective steps of a method for producing a film-attached copper foil with a metal substrate according to an embodiment of the present invention.

圖4中,圖4A係用以說明使用本發明實施形態之電解滾筒的電解法來製造金屬基材之製造方法的概略截面圖。圖4B係圖4A中位在D部的金屬基材之放大截面圖。圖4C係用以說明第二積層板之製造方法的概略說明圖。圖4D係圖4C中位在E部的第二積層板之放大截面圖。Fig. 4 is a schematic cross-sectional view for explaining a method of manufacturing a metal substrate by an electrolytic method of an electrolytic drum according to an embodiment of the present invention. 4B is an enlarged cross-sectional view of the metal substrate in the portion D of FIG. 4A. 4C is a schematic explanatory view for explaining a method of manufacturing the second laminate. Figure 4D is an enlarged cross-sectional view of the second laminate in position E of Figure 4C.

圖5中,圖5A~圖5D係顯示本發明實施形態之透視型電極用積層板之製造方法各步驟的概略說明圖。5A to 5D are schematic explanatory views showing respective steps of a method of manufacturing a laminated electrode for a see-through electrode according to an embodiment of the present invention.

圖6係顯示斷線檢查用單面透視型電極素材之斷線檢查用圖案的俯視圖。Fig. 6 is a plan view showing a pattern for wire breakage inspection of the single-sided see-through type electrode material for wire breakage inspection.

圖7中,圖7A係從實施例1之附金屬基材之薄膜金屬箔剝離金屬基材後,作為薄膜金屬箔側之剝離面的薄膜金屬箔之第一主面的掃描型電子顯微鏡(SEM:Scanning Electron Microscope)影像(觀察倍率:1000倍)。圖7B係從比較例1之附金屬基材之薄膜金屬箔剝離金屬基材後,作為薄膜金屬箔側之剝離面的薄膜金屬箔之第二主面的SEM影像(觀察倍率:1000倍)。In Fig. 7, Fig. 7A is a scanning electron microscope (SEM) of the first main surface of the thin film metal foil as a peeling surface of the thin metal foil side after peeling the metal substrate from the thin metal foil of the metal substrate of Example 1. : Scanning Electron Microscope image (observation magnification: 1000 times). 7B is an SEM image (observation magnification: 1000 times) of the second main surface of the film metal foil as a release surface of the film metal foil side after the metal substrate was peeled off from the film metal foil of the metal substrate of Comparative Example 1.

圖8中,圖8A~圖8D係顯示實施例1之單面透視型電極用積層板之製造方法各步驟的概略說明圖。8A to 8D are schematic explanatory views showing respective steps of a method of manufacturing a single-layer see-through electrode laminate according to the first embodiment.

圖9中,圖9A係實施例1之單面透視型電極素材之配線圖案層的SEM影像(觀察倍率:2000倍)。圖9B係比較例1之單面透視型電極素材之配線圖案層的SEM影像(觀察倍率:2000倍)。In Fig. 9, Fig. 9A is an SEM image (observation magnification: 2000 times) of the wiring pattern layer of the single-sided see-through electrode material of Example 1. 9B is an SEM image (observation magnification: 2000 times) of the wiring pattern layer of the single-sided see-through electrode material of Comparative Example 1.

圖10中,圖10A~圖10H係顯示比較例1之單面透視型電極用積層板之製造方法各步驟的概略說明圖。10A to 10H are schematic explanatory views showing respective steps of a method of manufacturing a laminated sheet for a single-sided see-through type electrode of Comparative Example 1.

圖11係參考例之具有帶狀線(stripline)之印刷配線板於厚度方向的概略截面圖。Fig. 11 is a schematic cross-sectional view showing a printed wiring board having a strip line in a thickness direction in a reference example.

圖12係顯示參考例之各試料之傳輸損失測定結果的圖表。Fig. 12 is a graph showing the results of measurement of the transmission loss of each sample of the reference example.

圖13係用以說明高低差及截面長度之配線的截面圖。Fig. 13 is a cross-sectional view showing the wiring of the height difference and the section length.

Claims (20)

一種附金屬基材之薄膜金屬箔,其特徵在於具備: 薄膜金屬箔,其具備第一主面及第二主面; 剝離層,其設於前述第一主面上且具有導通性;及 金屬基材,其設於前述剝離層上; 前述薄膜金屬箔之第一主面具有十點平均粗度(Rz)為2.5μm以下之微細凹凸,且前述第一主面之表面性狀的長寬比(Str)為0.5以上且1.0以下。A thin film metal foil with a metal substrate, characterized by: a thin film metal foil having a first major surface and a second major surface; a peeling layer provided on the first main surface and having conductivity; and a metal substrate disposed on the peeling layer; The first main surface of the thin film metal foil has fine concavities and convexities having a ten-point average roughness (Rz) of 2.5 μm or less, and the aspect ratio (Str) of the surface properties of the first main surface is 0.5 or more and 1.0 or less. 如請求項1之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔之第一主面的微細凹凸之高低差為2.3μm以下。The film metal foil of the metal base material according to claim 1, wherein the difference in height of the fine concavities and convexities on the first main surface of the thin film metal foil is 2.3 μm or less. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔之第一主面的截面長度相對於基準線長度在1.10倍以下。The thin film metal foil of the metal substrate according to claim 1 or 2, wherein a cross-sectional length of the first main surface of the thin film metal foil is 1.10 times or less with respect to a reference line length. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔之厚度為0.1μm以上且5.0μm以下。The thin film metal foil of the metal substrate according to claim 1 or 2, wherein the thickness of the thin film metal foil is 0.1 μm or more and 5.0 μm or less. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔含有選自於由銅、鎳、鋁及銀所構成群組中之至少1種。The film metal foil of the metal substrate according to claim 1 or 2, wherein the film metal foil contains at least one selected from the group consisting of copper, nickel, aluminum, and silver. 如請求項5之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔含有相對於前述薄膜金屬箔之總質量為80質量%以上之銅。The film metal foil of the metal substrate of claim 5, wherein the film metal foil contains copper in an amount of 80% by mass or more based on the total mass of the film metal foil. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述金屬基材含有相對於前述金屬基材之總質量為80質量%以上之選自於由銅、鎳、鋁、鎂、鎢、鉬、鉑、金及鈀所構成群組中之1種。The thin film metal foil of the metal substrate according to claim 1 or 2, wherein the metal substrate contains 80% by mass or more of the total mass of the metal substrate, and is selected from the group consisting of copper, nickel, aluminum, magnesium, and tungsten. One of a group consisting of molybdenum, platinum, gold, and palladium. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述金屬基材之厚度為7μm以上且40μm以下。The film metal foil of the metal substrate according to claim 1 or 2, wherein the metal substrate has a thickness of 7 μm or more and 40 μm or less. 如請求項1或2之附金屬基材之薄膜金屬箔,其中前述薄膜金屬箔之第二主面上具備降低反射層。The thin film metal foil of the metal substrate of claim 1 or 2, wherein the second main surface of the thin film metal foil is provided with a reflection reducing layer. 一種覆金屬之透明基材材料,其特徵在於具備: 透明基材; 如請求項1之附金屬基材之薄膜金屬箔,其設在前述透明基材之單面或兩面;及 透明接著層,其位於前述透明基材與前述薄膜金屬箔之間。A metal-coated transparent substrate material characterized by having: Transparent substrate; The film metal foil of the metal substrate of claim 1 which is provided on one or both sides of the transparent substrate; A transparent adhesive layer between the transparent substrate and the aforementioned thin film metal foil. 如請求項10之覆金屬之透明基材材料,其中前述透明接著層含有丙烯酸樹脂、環氧樹脂、胺甲酸乙酯樹脂或該等之混合樹脂。The metal-coated transparent substrate material of claim 10, wherein the transparent adhesive layer comprises an acrylic resin, an epoxy resin, an urethane resin, or a mixed resin thereof. 如請求項10或11之覆金屬之透明基材材料,其中前述透明接著層之硬度為1.0N/mm2 以上且200N/mm2 以下。The metal-coated transparent substrate material of claim 10 or 11, wherein the transparent adhesive layer has a hardness of 1.0 N/mm 2 or more and 200 N/mm 2 or less. 如請求項10或11之覆金屬之透明基材材料,其中前述透明基材包含延遲值為100nm以下之環烯烴薄膜或延遲值為3000nm以上之聚酯薄膜。The metal-coated transparent substrate material of claim 10 or 11, wherein the transparent substrate comprises a cycloolefin film having a retardation value of 100 nm or less or a polyester film having a retardation value of 3000 nm or more. 一種透視型電極用積層板,其特徵在於:其係將前述金屬基材及剝離層從如請求項10或11之覆金屬之透明基材材料剝離而成。A laminated electrode for a see-through electrode, characterized in that the metal substrate and the release layer are peeled off from the metal-coated transparent substrate material of claim 10 or 11. 一種透視型電極素材,其特徵在於具備配線圖案層,該配線圖案層係如請求項14之透視型電極用積層板的前述薄膜金屬箔具有開口部者。A see-through electrode material comprising a wiring pattern layer having the opening of the thin film metal foil of the see-through electrode laminate according to claim 14. 如請求項15之透視型電極素材,其中形成前述配線圖案層之線寬為0.5μm以上且10μm以下,或開口寬度為50μm以上且10000μm以下。The see-through electrode material of claim 15, wherein a line width of the wiring pattern layer is 0.5 μm or more and 10 μm or less, or an opening width of 50 μm or more and 10000 μm or less. 如請求項16之透視型電極素材,其片電阻為0.01Ω/sq以上且50Ω/sq以下。The perspective electrode material of claim 16 has a sheet resistance of 0.01 Ω/sq or more and 50 Ω/sq or less. 如請求項16之透視型電極素材,其全光線透光率為60%以上。The see-through electrode material of claim 16 has a total light transmittance of 60% or more. 一種器件,其特徵在於具有: 如請求項15之透視型電極素材;及 已和前述配線圖案層電連接之控制電路。A device characterized by having: a see-through electrode material as claimed in claim 15; A control circuit that has been electrically connected to the aforementioned wiring pattern layer. 一種透視型電極素材,其具備: 透明基材;及 配線圖案層,其形成在前述透明基材之單面或兩面且厚度為0.1μm以上且5.0μm以下; 前述配線圖案層係將隔著透明接著層而接合在前述透明基材上之薄膜金屬箔予以圖案化所形成,並且, 前述配線圖案層之表面的十點平均粗度(Rz)為2.5μm以下,且前述配線圖案層之前述表面的表面性狀之長寬比(Str)為0.5以上且1.0以下。A see-through electrode material having: Transparent substrate; and a wiring pattern layer formed on one surface or both surfaces of the transparent substrate and having a thickness of 0.1 μm or more and 5.0 μm or less; The wiring pattern layer is formed by patterning a thin film metal foil bonded to the transparent substrate via a transparent adhesive layer, and The ten-point average roughness (Rz) of the surface of the wiring pattern layer is 2.5 μm or less, and the aspect ratio (Str) of the surface property of the surface of the wiring pattern layer is 0.5 or more and 1.0 or less.
TW107136767A 2017-10-23 2018-10-18 Thin film metal foil with metal substrate, metal-coated transparent substrate material, laminate for see-through electrode, and see-through electrode material and device capable of effectively forming ultra-fine wiring with less transmission loss by photolithography TW201922487A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2017204708 2017-10-23
JP2017-204708 2017-10-23
JP2018-187792 2018-10-02
JP2018187792A JP7122675B2 (en) 2017-10-23 2018-10-02 Thin-film metal foil with metal substrate, metal-clad transparent substrate material, laminate for see-through electrode, see-through electrode material, and device

Publications (1)

Publication Number Publication Date
TW201922487A true TW201922487A (en) 2019-06-16

Family

ID=66626255

Family Applications (1)

Application Number Title Priority Date Filing Date
TW107136767A TW201922487A (en) 2017-10-23 2018-10-18 Thin film metal foil with metal substrate, metal-coated transparent substrate material, laminate for see-through electrode, and see-through electrode material and device capable of effectively forming ultra-fine wiring with less transmission loss by photolithography

Country Status (2)

Country Link
JP (1) JP7122675B2 (en)
TW (1) TW201922487A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112864397A (en) * 2019-11-27 2021-05-28 长春石油化学股份有限公司 Electrolytic copper foil, electrode and lithium ion battery comprising same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021014623A (en) * 2019-07-12 2021-02-12 パナソニックIpマネジメント株式会社 Thin metal foil with metal substrate, metal-clad transparent substrate material, light-transmissive electrode laminated substrate, and light-transmissive electrode material
CN114127341A (en) * 2019-07-26 2022-03-01 东洋钢钣株式会社 Roughened nickel-plated material and method for producing same

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
LU90532B1 (en) 2000-02-24 2001-08-27 Circuit Foil Luxembourg Trading Sarl Comosite copper foil and manufacturing method thereof
CN103154327A (en) 2010-10-06 2013-06-12 古河电气工业株式会社 Copper foil and manufacturing method therefor, copper foil with carrier and manufacturing method therefor, printed circuit board, and multilayer printed circuit board
JP2015157392A (en) 2014-02-24 2015-09-03 パナソニックIpマネジメント株式会社 Laminate for see-through type electrode and production method for the same, see-through type electrode material and device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112864397A (en) * 2019-11-27 2021-05-28 长春石油化学股份有限公司 Electrolytic copper foil, electrode and lithium ion battery comprising same
CN112864397B (en) * 2019-11-27 2022-04-29 长春石油化学股份有限公司 Electrolytic copper foil, electrode and lithium ion battery comprising same

Also Published As

Publication number Publication date
JP7122675B2 (en) 2022-08-22
JP2019077176A (en) 2019-05-23

Similar Documents

Publication Publication Date Title
TWI720783B (en) Surface treated copper foil, laminate and device for processing an electric signal
JP6682516B2 (en) Roughened copper foil and printed wiring board
JP5686840B2 (en) Surface-treated electrolytic copper foil and copper-clad laminate obtained by using the surface-treated copper foil
JP6883765B2 (en) Method for manufacturing fluoroscopic electrode laminate, fluoroscopic electrode material, device and fluoroscopic electrode laminate
TWI568894B (en) Black surface treatment of copper foil and copper foil with carrier foil
TW201922487A (en) Thin film metal foil with metal substrate, metal-coated transparent substrate material, laminate for see-through electrode, and see-through electrode material and device capable of effectively forming ultra-fine wiring with less transmission loss by photolithography
US10168842B2 (en) Conductive substrate, conductive substrate laminate, method for producing conductive substrate, and method for producing conductive substrate laminate
TW201901701A (en) Method for producing transparent conductive substrate, transparent conductive substrate
JP2015157392A (en) Laminate for see-through type electrode and production method for the same, see-through type electrode material and device
US10901561B2 (en) Conductive film, touch panel sensor, and touch panel
CN109696999A (en) Film metal foil with metal base covers metallic transparent substrate material, Clairvoyant type electrode plywood, electrode former material and device
JP2019019351A (en) Thin copper foil provided with peeling metal substrate, and method of producing the same
TWI669211B (en) Sheet material, metal mesh and method for manufacturing thereof
JPWO2018193940A1 (en) Conductive substrate
WO2015178455A1 (en) Copper foil for transparent resin base material, and transparent resin base material having fine copper wiring
WO2018056089A1 (en) Conductive film, touch panel, photomask, imprint template, conductive film-forming laminate, method for manufacturing conductive film, and method for manufacturing electronic device
JP2021014623A (en) Thin metal foil with metal substrate, metal-clad transparent substrate material, light-transmissive electrode laminated substrate, and light-transmissive electrode material
WO2017130869A1 (en) Blackening plating solution and method for manufacturing conductive substrate
JP2007096167A (en) Electromagnetic wave shielding sheet
JP2009054670A (en) Light-transmissive electromagnetic wave shield member and manufacturing method thereof, filter using same, and display
JP2021059068A (en) Metal-clad transparent substrate material, laminate for see-through type electrode and see-through type electrode material